Method for producing an ambient energy converter, in particular an element that converts electricity from ambient energy into direct current

Abstract

Proposed is a method for producing an ambient energy converter comprising a plate-like carrier substrate, which consists of a first conductor material, as a first electrode, and comprising a layered structure, which is arranged on said first electrode and which has a layer of ferroelectric material and a layer of a second conductor material that differs from the first conductor material, as a second electrode. The two conductor materials have different concentrations of free electrons. The ferroelectric material comprises one or more ferroelectric semiconductors. Ferroelectric semiconductors that are used as ferroelectric material are selected from the list comprising sodium nitrite, semiconductor ceramics based on barium titanate, lithium niobate, potassium niobate, lead titanate, etc. The method comprises the following method steps: - providing a plate, which consists of the conductor material provided for the first electrode, as the carrier substrate, - subjecting the carrier substrate to at least one surface treatment, - applying the layer of ferroelectric material (FE layer) to a side of the carrier substrate which is intended as a front side, - masking at least the edges of the FE layer on the front side of the carrier substrate, leaving free at least one section situated within the edges of the FE layer, and - applying the conductor material provided for the second electrode to the section left free by the masking.

Description

[0001] Method for producing an ambient energy converter, in particular an ambient energy electrical element in direct current

[0002] The invention relates to a method for producing an ambient energy converter according to the preamble of claim 1. In particular, the invention relates to an ambient energy electrical element - commonly known as an element that generates electricity from ambient energy - and a method suitable for producing the same.

[0003] The operating principle of the ambient energy converter, also known as an environmental energy converter, is that the device operates by absorbing energy from the environment in the area where this device is located.

[0004] The materials used in the device, the ability to combine them, as well as the ability to change the material proportion and the ability to change the design of the device according to the technical task allows the device to be used universally in various applications that require a power supply.

[0005] WO 2017 / 184102 A1 discloses an energy converter. It consists of a housing with a stack of conductive layers with a thickness of 9-10 μm each, including at least one unit cell. The unit cell consists of a layer of a ferroelectric material and two different conductive layers. The conductive layers and the semiconductor layer are arranged in the following order: a first conductive layer - a ferroelectric material - a second conductive layer, which differs from the first. All conductive layers and the semiconductor layer in the stack are tightly arranged. The conductive layers consist of different conductors with different free electron concentrations.Ferroelectric semiconductors used as ferroelectric materials can be selected from the list of sodium nitrite, semiconductor ceramics based on barium titanate, lithium niobate, potassium niobate, lead titanate, etc. According to WO 2017 / 184102 A1, a substrate (PTFE) is required for the production of the energy converter, onto which the three layers are applied (paragraphs 30-31). However, this substrate is not one of the conductive layers, but rather a separate inert substrate that serves as a base for the assembly process and is not important for the function of the current converter. According to WO 2017 / 184102 A1, a foreign material is used as a substrate for the energy converter manufacturing process.

[0006] RU 2419951 discloses a current transformer comprising a housing with a stack of conductive plates separated by a layer of ferroelectric material, made of different conductors with different free electron concentrations. The plates of both signs and the layer are in close contact with each other.

[0007] It is known from HEYWANG “Semiconducting Barium Titanate” Journal of Materials Science 6, 1971 pp 1214-1226 that barium titanate is a ferroelectric material with extremely high permittivity (dielectric constant).

[0008] It is doped to produce semiconductor ceramics based on barium titanate.

[0009] Through RU 2162457, IPC (7) C04B35 / 468, C04B35 / 64, published on 27.01.2001) it is known to convert the ferroelectric material barium titanate BaTiOs, which is a dielectric with a specific electrical resistance of more than 1012 Ohm ■ cm, into a ferroelectric semiconductor with a specific resistance of 10 Ohm ■ cm to 103 Ohm ■ cm by so-called forced reduction (RU 2162457, IPC (7) C04B35 / 468, C04B35 / 64, published on 27.01.2001). By GG Emello, TA Shichkova “The sol-gel method for the preparation of semiconductor barium titanate doped with lanthanum oxide Bal-XLaXTiO3 and tungsten oxide BaTil-XWXO3 (x = 0.001, 0.002)”, Solid State Chemistry and Modern Micro- and Nanotechnology VI International Conference Kislovodsk Stavropol: NCSTII, 2006; p.510, it is known to convert the ferroelectric material barium titanate BaTiOs into a ferroelectric semiconductor with a resistivity of 10 Ohm ■ cm to 103 Ohm ■ cm by controlling its valence.

[0010] An object of the invention is to provide a method for producing an ambient energy converter, also referred to as an ambient energy-electrical converter, preferably an ambient energy-electrical element, which builds up, draws and provides electricity or direct current or, in the absence of a consumer, a voltage between the electrodes from ambient energy.

[0011] The object is achieved by the features of the independent claim. Advantageous embodiments are set forth in the claims, the drawings, and the following description, including the information appended to the drawings.

[0012] It is important to emphasize that the invention can be implemented by a method for producing an ambient energy converter with at least one unit cell. The ambient energy converter or its unit cell comprises a plate-shaped carrier substrate made of a first conductor material as the first electrode and a layer structure arranged thereon with a layer of ferroelectric material and / or non-metallic semiconductors, for example, graphene or graphane, and a layer of a second conductor material different from the first conductor material as the second electrode.

[0013] However, it is also possible to use a base or carrier substrate onto which the first conductive material is applied as the first electrode. The substrate can be removed again after completion of the unit cell or at a later time. The substrate can be, for example, a silicon wafer. The two conductive materials have different concentrations of free electrons. The ferroelectric material and / or the non-metallic semiconductor material, for example, graphene or graphane, preferably comprise one or more ferroelectric semiconductors and / or non-metallic semiconductors.Ferroelectric semiconductors used as ferroelectric materials can include sodium nitrite, semiconductor ceramics based on barium titanate, lithium niobate, potassium niobate, lead titanate, and any other ferroelectric semiconductor and / or non-metallic semiconductor, both in pure and doped form, including doping with radioactive isotopes in varying percentages, as single crystals, ceramics, or foils. It has been recognized that the introduction of radioactive isotopes for doping the semiconductor has several positive effects on the properties of the ambient energy converter:

[0014] - Significantly increases performance.

[0015] - Extends the lifespan of the unit cell or device many times over.

[0016] - Increases the ability to manufacture equipment.

[0017] - Increases the efficiency of the devices.

[0018] - Improves technical capabilities and features.

[0019] Non-metallic materials (NM) can also be used as semiconductors, for example carbon, graphite, graphene, graphane or any other materials in the form of semiconductors, both pure and doped, including doping with radioactive isotopes, various chemical elements in different percentages, as single crystals, ceramics or films.

[0020] Doping with all existing radioactive substances is carried out in very small percentages. These percentages pose no problem for the environment or human life, and they do not exceed the natural radioactive emissions that occur in nature.

[0021] The process involves first providing a plate made of the conductor material intended for the first electrode as a carrier substrate.

[0022] Subsequently, the first electrode, as a carrier substrate, is subjected to at least one surface treatment. A surface treatment of the first electrode that increases the contact area can be beneficial for increasing the diffusion of the subsequently applied layers.

[0023] The semiconductors used in the device can absorb energy (diffusion) and store energy (storage) due to their ability to excite an electric current in a conductor when it moves in a magnetic field. A layer of ferroelectric material, or FE for short, is then applied to one side of the carrier substrate, designated as the front side. This layer can also be referred to as an FE layer.

[0024] It is important to emphasize that the abbreviation FE can represent any ferroelectric material - including material combinations - but particularly preferably for a ferroelectric semiconductor, in particular for barium titanate BaTiCh or combinations thereof and / or thereof both in pure and doped form, including doping radioactive isotopes with various chemical elements in different percentages, which can be used in the form of single crystals, ceramics or foils.

[0025] Finally, a layer of the conductor material intended for the second electrode is applied, masked within the FE layer, to the front side of the carrier material coated with the FE layer. The masking ensures that there is no contact between the conductor materials of the first and second electrodes outside the FE layer. Within the section of the front side of the carrier substrate coated with the FE layer, the conductor materials of the first and second electrodes are separated from each other by the FE layer.

[0026] The method may comprise and / or implement individual features or a combination of the features described above and / or below in connection with the ambient energy converter and / or ambient energy-electrical element and / or ambient energy-electrical converter, just as the ambient energy converter and / or the ambient energy-electrical element and / or the ambient energy-electrical converter may comprise and / or implement individual features or a combination of several features described above and / or below in connection with the method.

[0027] The method and / or the ambient energy converter and / or the ambient energy-electrical element and / or the ambient energy-electrical converter can alternatively or additionally have individual features or a combination of several features described above in connection with the prior art and / or in one or more of the documents mentioned in the prior art and / or in the following description of the exemplary embodiments shown in the drawings. The invention is explained in more detail below with reference to exemplary embodiments shown in the drawings. The size ratios of the individual elements to one another in the figures do not always correspond to the actual size ratios, since some shapes are simplified and other shapes are enlarged in relation to other elements for better illustration. Identical reference numerals are used for identical or identically acting elements of the invention.Furthermore, for the sake of clarity, only reference numerals necessary for the description of the respective figure are shown in the individual figures. The illustrated embodiments merely represent examples of how the invention can be designed and do not represent a final limitation. They show a schematic representation:

[0028] Fig. 1 is a schematic diagram of an elementary cell of a current converter generating electricity from ambient energy, comprising an ambient energy converter housed in a housing 1.

[0029] Fig. 2 shows an arrangement example of several unit cells connected in series.

[0030] Fig. 3 shows an arrangement example of several unit cells connected in parallel.

[0031] Fig. 4 shows an arrangement example of several combined (in series and parallel) connected unit cells.

[0032] Fig. 5 is a schematic representation of a process for manufacturing an ambient energy converter.

[0033] A method illustrated in whole or in part in Fig. 5 serves to manufacture an ambient energy converter comprising: a plate-shaped carrier substrate made of a first conductor material as the first electrode 2, 2a, 2b, and a layer structure arranged thereon with a layer of ferroelectric material referred to as FE layer 3 and a layer of a second conductor material different from the first conductor material as the second electrode 2, 2b, 2a (see reference numerals in Fig. 1, Fig. 2, Fig. 3, Fig. 4). The two conductor materials have different concentrations of free electrons. The ferroelectric material preferably comprises one or more ferroelectric semiconductors. Ferroelectric semiconductors used as the ferroelectric material are advantageously selected from the list of sodium nitrite, semiconductor ceramics based on barium titanate, lithium niobate, potassium niobate, lead titanate, etc.

[0034] In a first method step I, the method provides for the provision of a plate made of the conductor material intended for the first electrode as a carrier substrate. Particularly preferably, the surface of the first surface is smooth, i.e., free of unfavorable elevations or depressions, i.e., free of unevenness >20 pm, preferably >10 pm, particularly preferably >5 pm, advantageously >2 pm. For this purpose, machining of the surface can be used to reduce its roughness.

[0035] A second process step II following the first process step I provides for subjecting the carrier substrate to at least one surface treatment. The carrier substrate is subjected, for example, to a surface treatment using blasting technology, at least on its rear side. Preferably, shot blasting, particularly preferably glass bead blasting, is used as the surface treatment for at least the rear side of the carrier substrate. Alternatively or additionally, preferably following a first surface treatment using blasting technology, the carrier substrate is prepared for improved diffusion of the applied layers. This step is advantageously carried out using H2O2. Degreasing may also be advantageous.

[0036] A third process step III following the second process step II provides for the application of the layer of ferroelectric material, referred to briefly as FE layer, preferably a ferroelectric semiconductor, particularly preferably barium titanate BaTiOs, FE for short, to a side of the carrier substrate intended as the front side.

[0037] In a fourth process step IV following the third process step III, at least the edges of the FE layer on the front side of the carrier substrate are masked, leaving at least one area located within the edges of the FE layer free. A fifth process step V following the fourth process step IV involves applying the conductor material intended for the second electrode to the area kept free from the masking.

[0038] The method advantageously provides for firstly providing a plate made of the conductor material intended for the first electrode as a carrier substrate.

[0039] The carrier substrate is then subjected to at least one surface treatment.

[0040] Next, a layer of ferroelectric material, preferably a ferroelectric semiconductor, particularly preferably barium titanate (BaTiOs), or FE for short, is applied to a side of the carrier substrate intended as the front side. This layer is also called the FE layer.

[0041] It is important to emphasize that the abbreviation FE can represent any ferroelectric material - including material combinations - but particularly preferably a ferroelectric semiconductor, in particular barium titanate BaTiOs or combinations thereof and / or thereof.

[0042] Finally, a layer of the conductor material intended for the second electrode is applied, preferably masked within the FE layer, to the front side of the carrier material provided with the FE layer. The masking serves to ensure that there is no contact between the conductor materials of the first and second electrodes outside the FE layer. Within the section of the front side of the carrier substrate provided with the FE layer, the conductor materials of the first and second electrodes are separated from each other by the FE layer.

[0043] The method may provide an additional method step VI arranged between the third method step III and the fourth method step IV. In this step, after the layer of ferroelectric material (FE layer) has been applied to the side of the carrier substrate intended as the front side, and before the conductor material intended for the second electrode has been applied to the area kept free from the masking, a quality control of the FE layer is carried out, checking the FE layer, at least within the area kept free from the masking, for at least partial homogeneity of its layer thickness and / or at least partial closure of the covering of the carrier substrate.

[0044] This can help prevent contact points between the two conductor materials during the subsequent application of the conductor material intended for the second electrode. Contact points between the conductor materials for the first and second electrodes, both within the FE layer and laterally around the FE layer, lead to a short circuit between the two electrodes and thus to the rejection of the part of the ambient energy converter produced up to that point.

[0045] The method may provide for an additional method step VII, arranged, for example, between the second method step II and the third method step III. This step provides for the FE layer to be doped before the conductor material intended for the second electrode is applied to the area kept free of the masking, particularly preferably before the masking.

[0046] This additional process step VII can alternatively be performed independently of the third process step III, outside the sequence of the previously performed first and second process steps I and II. In such an additional process step VII, the ferroelectric material intended for the FE layer is doped before the FE layer is applied.

[0047] Regardless of whether the additional process step VII is performed after or before the third process step III, a doping process can be carried out in the additional process step VII before applying the conductor material intended for the second electrode. The goal is to achieve an average Nb concentration in the FE layer of 0.3 at%. Optimization of the Nb content is advantageously achieved using EDS measurements. Alternatively, a different doping element / isotope or mixtures can be used.

[0048] The application of the ferroelectric material to the FE layer in the third process step III and / or the application of the conductor material intended for the second electrode in the fifth process step V is advantageously carried out by vapor deposition.

[0049] For the vapor deposition of either the ferroelectric material for the FE layer or the conductor material intended for the second electrode, as well as the ferroelectric material for the FE layer and the conductor material intended for the second electrode, CVD (chemical vapor deposition) as well as PVD (physical vapor deposition) are possible.

[0050] Preferably, physical vapor deposition (PVD) is used as the vapor deposition method in the third process step III and / or in the fifth process step V.

[0051] PVD as the preferred method for gas phase deposition includes in particular: evaporation processes briefly summarized under the term vacuum evaporation, such as thermal evaporation, also known as vapor deposition, electron beam evaporation, laser beam evaporation (pulsed laser ablation; atoms and ions are evaporated by a short, intense laser pulse), arc evaporation (arc PVD; atoms and ions are released from the starting material and transferred into the gas phase by a strong current that flows between two electrodes during an electrical discharge like a lightning flash), molecular beam epitaxy.

[0052] Sputtering, also known as cathode sputtering, involves sputtering the starting material into a vapor phase by ion bombardment. Ion beam assisted deposition (IBAD) also involves simultaneous deposition of metal atoms and gases on substrates, but the gas molecules transferred into the vapor phase are dissociated and ionized by ion sources, and simultaneously applied to a usually heated substrate surface. Ion plating involves applying a higher-quality metal layer to another metal using plasma. First, a so-called soft etch is performed by sputtering, in which the substrate surface is cleaned by ion bombardment from the plasma. Metal vapor is then supplied from an evaporator source.This partially ionizes in the plasma and is accelerated to the surface of the preferably preheated substrate by an electrical bias voltage of between 0.3 and 5 kV, forming a layer of the evaporated material on the substrate. The constant bombardment with metal ions repeatedly removes, i.e., sputters, a portion of the substrate or layer. The dissolved atoms condense back onto the substrate and contribute to layer formation. The constant ion bombardment modifies the layer properties. Among other things, it can improve the adhesion of the layer. The resulting layer structure depends on the substrate temperature. Ion plating is preferably carried out under a working pressure between 2 Pa and 8 Pa, particularly preferably 5 Pa.

[0053] Reactive ion plating (RIP). This involves introducing a reactive gas into the plasma, which also ionizes, reacts with the sputtered metal, and forms a layer of the resulting compound. This allows a titanium nitride layer to be created from titanium vapor and introduced nitrogen.

[0054] ICB technology (ionized cluster beam), also ICBD (ionized cluster beam deposition), is a modified vapor deposition process for producing thin layers of metals, dielectrics, and semiconductors at low substrate temperatures. The crucible used, containing the molten starting material, is initially kept closed. Evaporation of the material and heating of the material vapor creates excess pressure in the sealed crucible. When a process-specific pressure is reached, the vapor for the coating is released through a nozzle under adiabatic expansion. This causes a type of condensation in the gas space, in which electrically neutral clusters of atoms, so-called clusters, consisting of approximately 500 to 2000 atoms, form. These neutral clusters of atoms are partially ionized in the gas space by collisions with an electron beam, preferably by about 5% to 35%. They are then accelerated in an electric field towards the substrate surface.Upon impact with the substrate surface, these atom clusters partially disintegrate, spread across the surface, and form a condensed layer. Using the accelerating voltage of the electric field, it is possible to vary the average energy of the atom clusters from purely thermal energy to over 200 eV per atom. This enables controlled deposition of crystalline layers and epitaxy. The coating properties (layer conformity, etc.) of the process are primarily influenced by the characteristic structure as well as the effect of ionization and acceleration of the atom clusters. The accelerating voltage can also be used to adjust the energy of the clusters to achieve a cleaning or even sputtering effect on the substrate, similar to sputtering.

[0055] The method preferably provides that nickel (Ni), silver (AG), brass, aluminum (AI), alloyed iron (Fe), in particular steel, lithium, tungsten, copper, gold, platinum or any combination of metals or their alloys and / or other conductive materials are used as the conductor material, wherein conductor materials with different concentrations of free electrons are used for the first and for the second electrode, preferably different conductor materials.

[0056] It is important to emphasize that any material that has the ability to conduct electrical current can be used as the material for the anode (+) and cathode (-).

[0057] The method particularly advantageously provides that at least parts of the process sequence take place under vacuum conditions, particularly advantageously under high vacuum conditions.

[0058] Particularly preferably, at least parts of the process take place under vacuum, preferably under a gas pressure which is lower than the atmospheric pressure in the environment, referred to briefly as ambient pressure.

[0059] The process advantageously provides that at least parts of the process sequence take place under an inert gas atmosphere, particularly preferably under a noble gas atmosphere.

[0060] A preferred embodiment of the method provides that the carrier substrate is arranged in an additional method step VIII preceding the first method step I, alone or together with, for example, other carrier substrates, on a device also referred to as a carrier in order to go through the treatment steps provided for in the various method steps or to carry them out one after the other.

[0061] It is important to emphasize that the ambient energy converter, or ambient energy-electrical element, functions due to an influx of energy from the environment. The ambient energy converter, or ambient energy-electrical element, converts ambient energy, such as gravitational energy, cosmic radiation, electric fields, and magnetic fields in the environment, for example, in the form of electromagnetic waves of various frequencies, extremely low mechanical vibrations, sound, radio waves, light radiation—from infrared to ultraviolet, as well as the entire X-ray spectrum—into electricity.

[0062] The ambient energy converter or the ambient energy-electrical element operates under strict observance of the law of energy conservation, charging through electromagnetic oscillations and wide-range pulses. Through electromagnetic waves of different frequencies, involving electromagnetic induction and their physical effects, and through changes in the magnetic field resulting from various physical and chemical processes that create an electric field, environmental energy is converted into direct current in the device according to the invention. They convert a wide range of low-potential environmental energies into electrical energy.

[0063] In the presence of conductive elements in a changing magnetic field, a voltage is induced, enabling current flow and facilitating its transfer to a device that requires electrical energy. In the designs of many electrical machines, one part of the machine generates a magnetic field that acts on another part of the device. The magnetic field is strongest directly inside, where the excitation current occurs.

[0064] To complete the picture, it should be noted that there is an interaction between the currents and fields of both currents due to the potential difference between the anode and cathode. To understand how this works, it is sufficient to imagine that the excitation current generates a magnetic field, which causes an induced current.

[0065] The magnetic field is characterized by magnetic induction, a vector physical quantity that represents a force characteristic of the magnetic field, namely its effect on moving charged particles and bodies with a magnetic moment. The nature of the materials used, physical and chemical processes, and the operating principle of the ambient energy converter allow the device to ultimately generate direct current. At its core, an ambient energy converter is partly a capacitor, meaning it has the ability to collect and store low-potential energy from the environment. The operating principle of the device and the properties of the materials used make it possible to reduce the internal electrical resistance and increase the power density when connected to a source that requires electrical energy.

[0066] An increase in specific electrical currents leads to a natural increase in specific electrical power at a constant potential difference. The main difference is that the capacitor is charged via the power grid, while the ambient energy converter uses energy from the environment.

[0067] The method allows the production of an ambient energy converter or an ambient energy electrical element, which can be used, for example, in a current converter.

[0068] Such a power converter can also be used as a power source in any device that requires electrical energy.

[0069] These can include mobile devices, household appliances, solar panels, electric vehicles, autonomous power supply systems for premises, and for use in the military industry.

[0070] These devices can be charged independently of their surrounding energy and operate autonomously, without the need for external charging. If necessary, such a device can also be connected to other power sources, depending on its programmed power characteristics.

[0071] The devices can be used in places far away from civilization.

[0072] For example, such devices can be used in space, on and under the ground, on and under water, and in the human body, to name just a few possible applications.

[0073] The main advantage of the power converter is its ability to operate autonomously far from civilization because it is charged by ambient energy. In other words, it draws the electrical energy it provides from the ambient energy. This operating principle does not violate the second law of thermodynamics and its principles. All solar panels therefore work according to the same principle. The only difference is the limited ability to charge with ambient energy.

[0074] For example, solar panels perform less well in winter. The ambient energy converter and at least one such power converter can operate in temperature ranges from -270 to +800.

[0075] The ambient energy converter and at least one such power converter operate according to the law of conservation of energy.

[0076] Namely: - according to the law - Lavoisier, the law - Lavoisier - Laplace, the law - Lavoisier - Laplace and Hess. A law discovered from the fundamental laws of thermochemistry.

[0077] The selected materials and their studied properties and composition make it possible to achieve, in pure or mixed form, the desired properties according to the specifications.

[0078] One of the possibilities of materials for generating electricity is their ability to absorb energy from their surroundings and be charged.

[0079] A broad area of ​​absorbed energy (diffusion) creates a potential difference. This, in turn, sets these materials in motion. During operation, the ambient energy, due to the potential difference of the energy in the environment, ensures that the ambient energy converter functions and converts energy into direct current.

[0080] Such a current converter comprising the ambient energy converter or the ambient energy-electrical element consists, for example, of a housing 1 which accommodates the ambient energy converter or the ambient energy-electrical element.

[0081] For producing an ambient energy-electrical converter, the method may comprise at least one additional method step IX following the fifth method step V. In this additional method step IX, the ambient energy converter or the ambient energy-electrical element produced to date may be inserted into a housing 1. This produces a unit cell of an ambient energy-electrical converter.

[0082] The method thus allows the production of an ambient energy-electrical converter - in short a current converter - shown in whole or in part in Fig. 2, Fig. 3, Fig. 4, Fig. 5 with a housing 1 and the ambient energy converter accommodated therein with the carrier substrate made of the first conductor material as the first electrode and the layer structure made thereon of FE layer and the second conductor material for the second electrode as a package of conductive plates of both features, which consists of a layer of a ferroelectric material 3 and two different conductive plates that are arranged in the following order: a conductive plate 2 - a ferroelectric material 3 - a conductive plate 2 that is different from the first.

[0083] All layers are firmly bonded and tightly attached to one another, and the first and second electrodes, referred to as conductive plates 2, consist of different conductors with different free electron concentrations. Ferroelectric semiconductors used as ferroelectric materials for the FE layer can be selected from the list of sodium nitrite, semiconductor ceramics based on barium titanite, lithium niobate, potassium niobate, lead titanite, etc.

[0084] The power converter thus comprises the ambient energy converter housed in a housing as a unit cell. The power converter can have multiple unit cells. These can be arranged electrically in series (Fig. 2), parallel (Fig. 3), or combined (Fig. 4).

[0085] It is important to emphasize that the following procedural steps can be carried out:

[0086] - Provision of nickel (Ni) sheets as the first electrode of each ambient energy-electrical converter or ambient energy-electrical element, for example, in a size of 100x100mm. Technical quality is sufficient, with no special requirements regarding composition or impurities. Surface roughness is preferably as low as possible. - Glass bead blasting of the back of the carrier substrate to improve temperature coupling.

[0087] - Increasing the diffusion behavior of the applied layers on the carrier electrode by H2O2 treatment.

[0088] - Degreasing the carrier substrate.

[0089] - Design and manufacture of a special carrier for the automated handling of the carrier substrates, for example with a robot arm of a vacuum coating system.

[0090] - Design and manufacture of two ceramic masks for masked Ag and Al deposition. For carrier substrates measuring 100x100mm, the mask cutout measures 90x90mm, for example. Advantageously, one mask can be provided for the production of a second electrode, referred to as a full-area cover electrode, and one mask with a grid structure for the deposition of a second electrode, referred to as a single-electrode array cover electrode.

[0091] - Provision of a barium titanate (BaTiOs), or FE target for short, for PVD coating of the carrier substrate with the FE layer in a first vacuum chamber.

[0092] - Provision of a niobium (Nb) target for Nb doping of at least the FE layer.

[0093] - Assembly of Nb target, process setup doping process with target average Nb concentration in FE layer 0.3at% optimization Nb content using EDS measurements.

[0094] - Provision and installation of a silver (Ag) target as the conductor material for the second electrode in a second vacuum chamber. Process commissioning, including rate and layer thickness distribution.

[0095] - Alternative provision and installation of an aluminum (Al) target as a conductor material for the second electrode in a second vacuum chamber. Process commissioning including rate and layer thickness distribution.

[0096] Expected layer and doping homogeneities on a diameter of 100mm

[0097] Layer homogeneity

[0098] FE with ±30%

[0099] Nb doping ±8% based on absolute content in FE layer

[0100] ±38% based on relative content in the FE layer

[0101] Ag topcoat ±15%

[0102] Al topcoat ±3% Parameter variations of the carrier substrate coatings:

[0103] Sample Nb doping FE coating Cover electrode a With standard AI single electrode array b With intermediate polishing AI full-area c With intermediate polishing Ag single electrode array d Without standard AI single electrode array e Without intermediate polishing AI full-area f Without intermediate polishing Ag single electrode array

[0104] The FE coating is preferably applied over the entire surface. The FE layer advantageously covers the entire carrier substrate, but at least the portion occupied by the second conductor material for the second electrode during application, plus a surrounding edge.

[0105] The Al or Ag coating is masked to avoid contact between the second electrode, also known as the cover electrode, and the carrier substrate.

[0106] Due to the flatness of the Al or Ag cover electrode, the risk of a short circuit between the carrier substrate, for example, a Ni substrate, and the second electrode, referred to as the cover electrode, is high due to defects in the carrier substrate or in the FE layer. Therefore, a multi-stage process for FE deposition with "intermediate polishing" between the individual deposition stages is advantageously performed. Optionally, the deposition of an array of individual electrodes instead of a flat cover electrode is also possible to avoid the use of individual electrodes with short circuits.

[0107] For quality control purposes, the following parameters can be recorded during the process:

[0108] - Layer thickness distribution FE.

[0109] - Layer thickness distribution AI and Ag.

[0110] - three EDS measurements to optimize Nb content.

[0111] - radially distributed EDS measurement with three measuring points to determine the distribution of the Nb content across the carrier substrate or its front side.

[0112] - XRD: two samples FE (with and without Nb).

[0113] - SEM with ion preparation: two samples FE (with and without Nb).

[0114] For quality control purposes during substrate coating, the thickness of the FE layer can be determined on a Si reference substrate located outside the sample area. The reference substrate can also be the silicon or silicon wafer on which the first substrate may have been applied.

[0115] - the thickness of the Ag and / or Al conductor material for the second electrode is determined on a Si reference substrate arranged outside the sample area.

[0116] - The electrical resistance between the carrier substrate and the second electrode, also known as the cover electrode, can be measured using a multimeter, for example.

[0117] A manufacturing process may, for example, include:

[0118] - Order / Delivery Nb-Target.

[0119] - Research / order / delivery of Ni carrier substrates.

[0120] - Design / manufacturing of customized carriers.

[0121] - Coordination of design / order / production of shadow masks.

[0122] - Substrate cleaning.

[0123] - Preparation of FE process.

[0124] - Test coatings.

[0125] - FE coating carrier substrates.

[0126] - Al metallization first batch of carrier substrates.

[0127] - Commissioning of co-sputtering process with Nb.

[0128] - Composition optimization.

[0129] - Nb: FE coating of customer substrates.

[0130] - Al metallization second batch of customer substrates.

[0131] - Ag metallization of customer substrates.

[0132] The process allows the production of a power converter that generates electricity from ambient energy.

[0133] The electrical current converter consists of a housing 1 which houses an ambient energy converter manufactured according to the method.

[0134] The ambient energy converter can be described as a stack of conductive plates of both polarities as electrodes, separated by a layer of stabilized single-crystal ferroelectric. All layers in the stack are tightly adjacent to one another. The plate stack, housed in the housing 1, forms a unit cell 5. The plate stack is made layer by layer from a ferroelectric material. It comprises two metal plates made of dissimilar conductive material with a significant difference in the concentration of free electrons. According to the method, the plate stack is constructed as a layered structure on a carrier substrate made of a first conductive material as the first electrode 2, 2a, 2b.The layers comprising the carrier substrate are arranged in the following order: a conductive plate made of a first conductor material as the carrier substrate forming the first electrode; an FE layer of ferroelectric material; and a layer made of a different conductor material than the first conductor material, serving as the second electrode. The unit cells 5 can be connected to an electrical energy source in series (Fig. 2) or in parallel (Fig. 3), or in combination (Fig. 4). In a combined arrangement, some unit cells 5 are connected in series and some are connected in parallel. In the FE layer 3, stabilized single crystals of ferroelectric materials are replaced by stabilized single crystals of ferroelectric semiconductors, such as sodium nitrite, semiconductor ceramics based on barium titanate, lithium niobate, potassium niobate, lead titanate, etc.This reduces the internal electrical resistance of the ambient energy converter and thus of the unit cell 5. Furthermore, this increases the specific electrical power of the ambient energy converter and thus of the unit cell 5 when connected to an electrical load.

[0135] A special feature of the ambient energy converter and thus of the unit cell 5 is the replacement of stabilized single crystals of ferroelectric materials by stabilized single crystals of ferroelectric semiconductors, such as sodium nitrite, semiconductor ceramics based on barium titanate, lithium niobate, potassium niobate, lead titanate, etc.

[0136] It is known that there are ferroelectric materials that also possess semiconductor properties, the so-called ferroelectrics—semiconductors that, in terms of their specific electrical resistance (10-2 - 107 ohm cm), occupy an intermediate position between conductors and insulators. For example, sodium nitrite (NaNO2), semiconductor ceramic materials based on lithium niobate, potassium niobate, lead titanate, barium titanate, and many others (see V.M. Fridkin, Ferroelectric Semiconductors. -M.: Nauka, 1976. - 408 p. V.V. Ivanov, A.A. Bogomolov, Ferroelectric Semiconductors, Kalinin, Kalinin University Press, 1978, 96 p.).

[0137] In particular, the ferroelectric material barium titanate BaTiOs is a dielectric with a specific electrical resistance of more than 1012 Ohm ■ cm. However, it is possible to convert it into a ferroelectric semiconductor with a resistivity of 10-103 Ohm ■ cm, for example, by forced recovery (see patent Rll 2162457, IPC (7) C04B35 / 468, C04B35 / 64, published on 27.01.2001) or by controlling its valence (see Solid State Chemistry and Modern Micro- and Nanotechnology VI International Conference Kislovodsk Stavropol: NCSTII, 2006. 510 p. The sol-gel process for the preparation of semiconductor barium titanate doped with lanthanum oxide Bal-XLaXTiO3 and tungsten oxide BaTil-XWXO3 (x = 0.001, 0.002), GG Emello, TA Shichkova).

[0138] BaTiOs is doped to produce semiconductor ceramics based on barium titanate.

[0139] Titanium ions Ti 4+ are provided by W® + Sb 5+ , Nb5+ , Ta 5+ , etc. ions are replaced. Barium ions Ba 2+ are for this purpose by Mn 4+ , La 3+ , Nd 3+ , Y 3+ , Gd 3+ ions and others replaced.

[0140] The concentration of doping elements is typically less than 0.3 atomic percent.

[0141] The causal relationship is as follows:

[0142] - The use of ferroelectric semiconductors with an electrical resistance of less than 107 Ohm ■ cm as the active unit cell element instead of ferroelectric materials, which are pronounced dielectrics with a specific electrical resistance of up to 1016 Ohm ■ cm, makes it possible to reduce the internal electrical resistance of the unit cell and to obtain larger specific electric currents at the same pairs of the current collectors of the unit cell.

[0143] - Increasing the specific electrical currents at a constant potential difference leads to a natural increase in the specific electrical power of a unit cell by more than two times compared to a barium titanate prototype.

[0144] - Increasing the specific electrical power of an elementary cell makes it possible to expand the possibilities of practical use of the power converter both technically and economically.

[0145] The electrical energy converter consisting of at least one unit cell is shown in Fig. 1. This converter consists of a housing 1, inside which are arranged two electrodes 2, 2a, 2b, also referred to as a conductor pair, which consist of different conductor materials with different concentrations of free electrons. A ferroelectric semiconductor 3 is located between the electrodes 2, 2a, 2b. Insulators 4 serve to pass electrical contacts connected to the electrodes 2, 2a, 2b through the housing 1. The electrical contacts serve both to interconnect several unit cells (Fig. 2, Fig. 3, Fig. 4) and to connect electrical consumers.

[0146] As examples of ferroelectric semiconductors used to manufacture the elements of the electrical current converter, the following semiconductor ceramics based on barium titanate are given:

[0147] - Barium titanate doped with niobium (Nb) with an atomic concentration of 0.220% and specific resistance of 6470 Ohm ■ cm;

[0148] - Barium titanate doped with lanthanum (La) at a concentration of 0.125 atomic% and a resistivity of 883,500 ohm cm.

[0149] Reference samples of barium titanate prototypes are manufactured using barium titanate with a resistivity of 2710000000 Ohm ■ cm.

[0150] Iron-nickel is used as a pair of dissimilar conductors. The current transformer consists of at least one unit cell 5. The unit cell 5 is formed by successive vacuum deposition on the anti-adhesive base layer with a surface area of ​​1 dm 2 manufactured.

[0151] The layer structure on the carrier substrate consisting of the first conductor material serving as the first electrode 2, 2a, 2b advantageously has the following layer thicknesses: The layer of the second conductor material intended as the second electrode 2, 2b, 2a is advantageously formed with a thickness of 9-10 microns, although this may vary depending on the technical specifications. An FE layer of a ferroelectric semiconductor is formed with a thickness of preferably less than 1 micron, thereby providing a continuous, pore-free, uniform coating.

[0152] Example 1.

[0153] Fabrication of the unit cell reference sample as a barium titanate prototype. A mask with a surface area of ​​1 dm 2is applied to the polished polytetrafluoroethylene base coating treated with polymethyl, and a layer of iron with a thickness of 9-10 microns is sprayed on. The mask is removed, and another layer of barium titanate is sprayed on, creating a continuous, uniform, pore-free coating with a thickness of up to 1 micrometer.

[0154] The mask is then replaced, and a 9-10 micron thick nickel layer is sprayed on. The mask is removed, and a finishing element is separated from the base coating using a vacuum. Traces of polymethylsiloxane are removed from the surface layer of iron using diethyl ether, and the remaining diethyl ether is removed by blowing dry air. The unit cell is then placed between pole terminals made of iron or nickel. The resulting electrical current converter is connected to a power source.

[0155] Example 2.

[0156] Fabrication of a unit cell from niobium-doped barium titanate.

[0157] The unit cell is fabricated using the technique described in Example 1, using niobium-doped barium titanate instead of barium titanate.

[0158] Example 3.

[0159] The unit cell is fabricated using the technique described in Example 1, using lanthanum-doped barium titanate instead of barium titanate.

[0160] Table 1 shows the relationship between the electrical power (mW) and the values ​​of voltage (V) and electrical current (mA) of a unit cell at an external load of 1000 ohms made of ferroelectric semiconductor materials relative to a reference sample of the barium titanate prototype.

[0161] The operating life of each ferroelectric semiconductor included in a single unit cell was investigated. Each unit cell operated continuously for more than 18,000 hours in a temperature range from -20 to +110 degrees Celsius.

[0162] Table 1

[0163] As can be seen from Table 1, the electrical performance increases dramatically when using ferroelectric semiconductors. When using barium titanate doped with niobium (Nb), the electrical performance of the converter unit cell increases by 2,088 times compared to the barium titanate prototype. When using barium titanate doped with lanthanum (La), the electrical performance of the converter unit cell increases by 1,869 times compared to the barium titanate prototype. The current converter has a significant advantage over the barium titanate prototype in terms of its practical application. Even greater performance increases are possible with radioactive doping.

[0164] Examples of variations of the manufacturing process and the ambient energy converter that can be produced by it are given below.

[0165] A particularly preferred material combination for the ambient energy converter is silver (Ag) - BaTiOs - aluminum (Al).

[0166] Alternative material combinations are

[0167] - Silver - BaTiO3 - Brass.

[0168] - Brass - BaTiO3 - Silver.

[0169] - Nickel - BaTiO3 - Aluminum.

[0170] - Aluminum - BaTiO3 - Nickel.

[0171] - Fe, (alloyed) - BaTiO3 - brass.

[0172] - Fe, (alloyed) - BaTiO3 - aluminum.

[0173] - Fe, (alloyed) - BaTiO3 - Nickel.

[0174] It's important to note that other options are also possible. When using iron as a conductor material, it is preferred as a carrier substrate.

[0175] In principle, any conductive materials can be used as anode and cathode for the two electrodes.

[0176] The first material is always used as a carrier substrate.

[0177] The first material used as a carrier substrate should be degreased.

[0178] A preferred embodiment of the method for producing an ambient energy converter using the particularly preferred material combination silver (Ag) - BaTiOs - aluminum (AI) provides the following:

[0179] For the carrier substrate serving as the first electrode 2, 2a, 2b, a 1 mm thick silver plate with dimensions of 10 cm x 10 cm (100 mm x 100 mm) is used.

[0180] The thicknesses can be adjusted according to the set technical specifications.

[0181] As a FE layer, BaTiCh is deposited onto the silver plate by sputter deposition in a layer thickness of 0.1 micrometers to 10 micrometers or more.

[0182] The thicknesses can be adjusted according to the set technical specifications.

[0183] The third material layer serving as the second electrode 2, 2b, 2a made of aluminum as a conductor material different from the conductor material of the carrier substrate can also be applied to the FE layer by sputter deposition (sputtering) in a thickness of 0.1 micron to 10 microns or more.

[0184] The thicknesses of the layers, in particular the FE layer and the layer forming the second electrode 2, 2b, 2a, including the thickness of the carrier substrate, can be adjusted according to the set technical specifications.

[0185] The main requirement for the production of the layer structure is uniform coverage, especially of the FE layer. To avoid direct contact between the conductor materials of the first electrode 2, 2a, 2b and the second electrode 2, 2b, 2a, the FE layer must be free of gaps, i.e., free of through holes in the FE layer. This can be provided for in the process flow by an additional process step VI for quality control purposes.

[0186] To apply (sputter) the layer structure, at least one vacuum spray chamber can be used.

[0187] It is advantageous to use a high vacuum chamber with the lowest possible gas pressure in the working space.

[0188] High vacuum coating achieves a continuous, uniform coating.

[0189] The coating is preferably carried out in the absence of ambient air. It is advantageous to provide a noble gas, possibly an inert gas, atmosphere, particularly argon.

[0190] The barium titanate (BaTiO3) of the FE layer is crystalline.

[0191] The desired result is achieved by the crystal lattice that forms during application.

[0192] BaTiOs is a ferroelectric semiconductor by nature.

[0193] Barium titanate (BaTiOs) acts as a ferroelectric semiconductor even after sputtering.

[0194] Barium titanate (BaTiOs) is used today with its universal properties in various fields, including electronics and microelectronics (sensors, actuators, capacitors), and biomedicine (implants).

[0195] One of the properties of barium titanate (BaTiO3) as a so-called synoelectric semiconductor in a structure where metals play the role of anode and cathode is to absorb low-potential energy from the environment and store it within itself.

[0196] For example, the properties of BaTiOs, as shown in the examples, allow it to absorb the effects of light and electromagnetic waves of various frequencies, from extremely low mechanical vibrations, sound, and radio waves to light radiation – from infrared to ultraviolet. Furthermore, the properties of BaTiOs as a material, which function in storage devices, enable its use in electronics and microelectronics, for example, in capacitors and in the ambient energy converter produced using the method.

[0197] Ferroelectric semiconductors as nanostructured ferroelectric materials can solve many technical problems to reduce the size of devices.

[0198] The ambient energy converter manufactured according to the method and the power converter comprising it as proposed differ from other alternative sources of electrical energy generation in that it uses ferroelectric semiconductors which allow the ambient energy converter to be charged from low-potential ambient energy.

[0199] At its core, the ambient energy converter is partly a capacitor, meaning it has the ability to accumulate and store energy.

[0200] The main difference is that the capacitor is charged from the mains, while the ambient energy converter is charged with low-potential energy, cosmic wave rays, electric and magnetic fields in the environment.

[0201] This principle does not violate the law of conservation of energy and the second law of thermodynamics.

[0202] Barium titanate (BaTiOs) is a unique and versatile material whose capabilities have not yet been fully explored.

[0203] For example, barium titanate (BaTiOs) exhibits a photorefractivity, also known as the photorefractive effect, which manifests itself in a local change in the refractive index depending on the light wave incident on it.

[0204] As a result, the light beam itself changes the conditions of its propagation.

[0205] This property of light acting on itself can be used to perform optical functions such as phase-conjugated mirrors (which reflect light back in the direction from which it originated), optical computers, optical switches, dynamic holograms, and, especially, holographic memory devices. In this case, the photorefractive effect of ferroelectrics and non-metallic semiconductors is one of the ways they absorb and preserve low-potential energy from the environment and store it within themselves.

[0206] Alternatively or additionally, the method may comprise individual features or a combination of several features mentioned initially in connection with the prior art and / or in one or more of the documents mentioned in the prior art and / or in the preceding description or the following claims.

[0207] The invention can be implemented by or in conjunction with an ambient energy converter as described above or a power converter comprising at least one such converter.

[0208] Additional, beyond a complete solution to the problem underlying the invention, involves the use of novel materials, particularly radioactively doped ferroelectric semiconductors and non-metallic semiconductors. These materials have not previously been used to generate and provide direct current electrical energy.

[0209] The percentage concentration of radioactive dopant material in the semiconductor material can range from 0.01% to 0.5%. The percentage ratio, the doping of the semiconductors, can be increased or decreased depending on the technical capabilities of the radioactive materials and the specific technical task. To increase the material density and to fill cavities (holes), semiconductors can be additionally doped with conductors, such as silver, aluminum, or other materials, depending on the technically required properties.

[0210] The radioactive isotopes will significantly improve the technical properties and capabilities of the environmental energy-to-direct current converter, especially its unit cell, as an electrical element (power source). Additional doping with conductors, such as silver, aluminum, or other conductive materials, significantly increases the time (rate) of absorption of low-potential energy from the environment and its return in the form of direct current. These processes significantly increase the device's efficiency. Semiconductors can contain single or mixed additives. The proposed semiconductor materials can be doped with metallic or non-metallic conductors or semiconductors and / or with natural or artificially produced elemental radioactive isotopes.

[0211] The absorption and energy transfer rate in the environmental energy converter increases with the density of the material between the electrodes. Doping with metallic or non-metallic conductors significantly increases the time (rate) of absorption (diffusion) of low-potential energy from the environment and its release in the form of direct current. These processes significantly increase the device's efficiency.

[0212] Furthermore, natural or artificially produced elemental radioactive isotopes, particularly due to their properties and natural decay, increase energy, increasing the technical capabilities and extending the service life of the generator that converts environmental energy. Radioactive isotopes significantly increase the efficiency compared to the previously described device variants.

[0213] The process of operating the device, with additional energy release during the half-life of radioactive isotopes, quickly replenishes lost potential. Radioactive isotopes increase the efficiency of the unit cell.

[0214] During normal operation of the device, without doping with radioactive isotopes, it functions due to the low potential energy from the environment and the potential difference between the conductors (anode and cathode), and when doped with radioactive isotopes, the energy is further amplified by the natural decay process of the radioactive isotopes within the device.

[0215] Radioactive isotopes will significantly improve the technical characteristics and capabilities of the environmental energy to direct current converter, especially its unit cell, as an electrical element (power source).

[0216] Furthermore, natural or artificially produced elemental radioactive isotopes, their properties, and their natural decay energy provide a mechanism that increases the technical capabilities and service life of the generator. This mechanism converts environmental energy through the processes occurring within and stimulates the potentiometric and regenerative amplification of the device. The device's operation, with the additional release of energy during the semi-decay of the radioactive isotopes, restores the lost potential more quickly.

[0217] The radioactive isotopes complement and significantly increase the efficiency compared to the previously described device variants.

[0218] By selecting the isotope type and the percentage ratio of radioactive isotopes doping the semiconductor according to the technical requirements, the required technical properties and operating life of the device can be individually determined. In principle, any artificial or natural isotope can be used. For example, the long-lived isotope of sodium 22Na can be used. When selecting the radioactive isotope for doping, its half-life can be taken into account to correlate with the desired minimum shelf life of the unit cell.

[0219] The selection and doping of semiconductors with radioactive isotopes is based on their technical properties and the assigned technical task. Since the semiconductors themselves already perform the bulk of the work, additional doping will improve the quality and capabilities of the device. Small percentages of radioactive materials are harmless to humans and the environment. These devices make it possible to generate environmentally friendly and inexpensive electrical energy.

[0220] This invention has several advantages over other power sources, such as environmental friendliness, versatility of application and low production costs.

[0221] Further advantages are:

[0222] - Similar energy sources do not exist today; the proposed ambient energy converters, ambient energy-electrical elements and the current converters based on them, in short ambient energy converters, have nothing to do with galvanic batteries (batteries, accumulators, etc.).

[0223] - The ability to self-charge and generate direct current allows mobile phones, computers, and other devices to operate offline. - Ambient energy converters allow you to operate offline for at least 2 years. - If necessary, the lifespan of the ambient energy device can be extended.

[0224] - No cost for power generation - the ambient energy converters are charged independently and absorb the energy from the environment.

[0225] - Low production costs of power supplies - despite all the leading positions of ambient energy converters, the production costs of ambient energy converters do not exceed the costs of manufacturing conventional batteries (batteries and accumulators).

[0226] - Unlimited possibilities of their design - from traditional forms in the form of generally accepted galvanic cells to the necessary forms determined by the specifics of their application.

[0227] - Installations can be multiplied and divided, creating the necessary parameters to solve different requirements - which allows the ambient energy converters to be used in different devices and meet all the requirements necessary for comfortable operation of the respective devices.

[0228] - The ambient energy converters are short-circuit resistant. Short circuits do not affect the subsequent operation of the ambient energy converters, as they provide the same power almost immediately, even after multiple short circuits.

[0229] - Long service life without preventive maintenance, - Due to the absence of moving parts and components, the ambient energy converter does not require maintenance.

[0230] - A diverse range of device applications, ranging from batteries in hearing aids, telephones, computers, miners' flashlights, car batteries to lighting and space heating.

[0231] - Absolute communication capabilities - given the widest spectrum of convertible energy in the environment, it is possible to use the ambient energy converters under all existing conditions and in different directions where power sources are required.

[0232] - The new technology makes it possible to generate the electricity required for household appliances in a technologically advanced and cost-effective way. - The proposed technology is completely independent and autonomous for long-term operation – the ambient energy converters do not require recharging with fuel or electricity.

[0233] - No hazardous waste disposal is required - the complete absence of waste and the need for conventional fuel, etc., makes the operation of ambient energy converters environmentally friendly.

[0234] - An effective advantage of the proposed ambient energy converters is that they will be able to ensure the operation of all devices in autonomous mode - which will be crucial in places far from civilization, as well as in military and tourist conditions.

[0235] The invention is not limited by the description based on the exemplary embodiments. Rather, the invention encompasses any novel feature and any combination of features, including in particular any combination of features in the claims, even if this feature or combination itself is not explicitly stated in the claims or exemplary embodiments.

[0236] The invention is particularly applicable commercially in the field of manufacturing and operating systems and devices for providing electrical energy, where, for example, electrical consumers must be supplied with electricity far from any possibility of connection to a power grid.

[0237] The invention has been described with reference to preferred embodiments. However, it is conceivable for a person skilled in the art that modifications or variations of the invention can be made without departing from the scope of the following claims.

[0238] According to all embodiments, aspects, and examples of the invention, the ferroelectric material (FE) can be replaced by, or used in combination with, non-metallic semiconductors (NM), for example, graphene or graphane. References to ferroelectric material (FE) in the description or claims always also refer to non-metallic semiconductors as an alternative to FE or in combination with FE. References to BaTiO3 throughout the description are synonymous with other FEs and NMs, either individually or in combination.

Claims

Patent claims 1. A method for producing an ambient energy converter comprising a plate-shaped first electrode made of a first conductor material as a carrier substrate (2a / 2b) and a layer structure arranged thereon with a layer of ferroelectric material (3) (FE) and / or non-metallic semiconductor material and a layer (2b / 2a) of a second conductor material different from the first conductor material as a second electrode, wherein: the two conductor materials have different concentrations of free electrons, the ferroelectric material comprises one or more radioactively doped ferroelectric semiconductors, and / or the non-metallic semiconductor material comprises one or more non-metallic semiconductors (NM), comprising the method steps: Providing the first electrode as a plate (2a / 2b) made of the intended conductor material as a carrier substrate, - applying the FE layer (3) to a side of the first electrode intended as the front side as a carrier substrate (2a / 2b), Masking at least the edges of the FE layer (3) on the front side of the first electrode as a carrier substrate (2a / 2b) while keeping free at least one section located within the edges of the FE layer (3), - Applying the conductor material intended for the second electrode to the area kept free from the masking.

2. Method according to claim 1, wherein after the application of the FE layer to the side of the carrier substrate intended as the front side, and before the application of the conductor material intended for the second electrode to the part kept free from the masking, a check of the FE layer is carried out at least within the part kept free from the masking for at least partially homogeneity of its layer thickness and / or at least partially closed covering of the carrier substrate.

3. The method according to claim 1 or 2, wherein, as an additional method step, the FE layer is doped before the conductor material intended for the second electrode is applied to the part kept free from the masking.

4. The method according to claim 1 or 2, wherein, as an additional method step, the ferroelectric material intended for the FE layer is doped before the FE layer is applied.

5. The method according to any one of claims 1 to 4, wherein the application of the ferroelectric material and / or the application of the conductor material provided for the second electrode is carried out by vapor deposition.

6. The method according to claim 5, wherein physical vapor deposition (PVD) is used as the vapor deposition method.

7. Method according to one of the preceding claims, wherein a side of the carrier substrate intended as the back side is subjected to a surface treatment using blasting technology.

8. Method according to one of the preceding claims, wherein, as a surface treatment step, the carrier substrate is degreased before applying the FE layer.

9. Method according to one of the preceding claims, wherein nickel (Ni), silver (AG), brass, aluminum (AI), alloyed iron (Fe), in particular steel, are used as conductor materials, wherein different conductor materials are used for the first and for the second electrode.

10. Method according to one of the preceding claims, wherein at least parts of the method take place under vacuum conditions, particularly advantageously under high vacuum conditions.

11. Process according to one of the preceding claims, wherein at least parts of the process take place under an inert gas atmosphere, particularly preferably under a noble gas atmosphere.

12. Method according to one of the preceding claims, wherein at least one carrier substrate is arranged on a device also referred to as a carrier in order to undergo the treatment steps provided for in the various method steps or to carry them out one after the other.

13. Method according to one of the preceding claims, wherein the ambient energy converter is inserted into a housing 1.

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