Multilayer electronic component

Abstract

A multilayer electronic component is provided. The multilayer electronic component includes a main body including a dielectric layer and internal electrodes alternately disposed with the dielectric layer, and an external electrode disposed on the main body. The internal electrode includes a plurality of electrode portions and a plurality of disconnected portions, and a conductive glass is disposed in at least one of the plurality of disconnected portions.

Description

[0001] This application claims the benefit of priority to Korean Patent Application No. 10-2024-0192239, filed on December 20, 2024, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] This disclosure relates to a multilayer electronic component. Background Technology

[0003] Multilayer ceramic capacitors (MLCCs, a type of multilayer electronic component) are chip capacitors mounted on printed circuit boards of various types of electronic products, such as imaging devices (including liquid crystal displays (LCDs) and plasma display panels (PDPs)), computers, smartphones, and mobile phones, and used to charge or discharge them.

[0004] MLCCs are used as components in a variety of electronic devices due to their small size, high capacitance, and ease of installation.

[0005] In the manufacturing process of MLCCs, the internal electrodes are sintered before the dielectric layer. In this process, the internal electrodes may shrink, potentially creating holes in the spaces previously occupied by them. The presence of these holes reduces the area of ​​the internal electrodes, which can lead to a decrease in the capacitance of the MLCC. Furthermore, stress may concentrate in the remaining connections of the internal electrodes, potentially causing cracks or crack propagation, which could lead to internal electrode breakage. As the thickness of the internal electrodes decreases, this breakage can become more severe and may be a major cause of performance degradation in MLCCs.

[0006] Therefore, a method is needed to compensate for the disconnection of the internal electrode in order to improve the reliability of multilayer electronic components and suppress the capacitance drop of multilayer electronic components.

[0007] [literature] [Patent Literature] (Patent Document 1) Korean Patent Application Publication No. 10-2019-0116144 Summary of the Invention

[0008] One aspect of this disclosure is to provide a multilayer electronic component with excellent reliability.

[0009] Another aspect of this disclosure is to provide a multilayer electronic component with excellent capacitance per unit volume.

[0010] Another aspect of this disclosure is to provide a multilayer electronic component that suppresses crack initiation and propagation.

[0011] However, the aspects of this disclosure are not limited to those set forth herein, and will be more readily understood in the process of describing specific exemplary embodiments of this disclosure.

[0012] According to one aspect of this disclosure, a multilayer electronic component is provided, comprising: a body including a dielectric layer and inner electrodes alternately disposed with respect to the dielectric layer; and an outer electrode disposed on the body. The inner electrodes may include a plurality of electrode portions and a plurality of disconnect portions, and conductive glass may be disposed in at least one of the plurality of disconnect portions.

[0013] According to an example embodiment of this disclosure, conductive glass can be disposed in the disconnection portion of the inner electrode, thereby suppressing the decrease in capacitance caused by the disconnection portion.

[0014] However, the various advantages and effects of this disclosure are not limited to those set forth herein, and will be more readily understood in the process of describing specific exemplary embodiments of this disclosure. Attached Figure Description

[0015] The above and other aspects, features and advantages of this disclosure will become clearer from the following detailed embodiments, taken in conjunction with the accompanying drawings, in which: Figure 1 This is a schematic perspective view of a multilayer electronic assembly according to an exemplary embodiment of the present disclosure; Figure 2 It is along Figure 1 A schematic cross-sectional view of line I-I'; Figure 3 It is along Figure 1 A schematic cross-sectional view taken from line II-II'; Figure 4 It is a schematic breakdown diagram of the main body; Figure 5 This is a schematic enlarged view of the main body before sintering; Figure 6 schematically shown Figure 5 The state after sintering; Figure 7 It is a schematic enlarged view of the internal electrodes; and Figure 8 Conductive glass is shown schematically. Detailed Implementation

[0016] In the following description, exemplary embodiments of the present disclosure are illustrated with reference to the accompanying drawings. However, the present disclosure may be exemplified in many different forms and should not be construed as limited to the specific exemplary embodiments set forth herein. Additionally, exemplary embodiments of the present disclosure may be provided to describe the present disclosure more completely to those skilled in the art. Therefore, for clarity of description, the shape and size of elements in the drawings may be exaggerated, and elements denoted by the same reference numerals in the drawings may be the same elements.

[0017] To clearly illustrate this disclosure, parts irrelevant to the description have been omitted, and dimensions (e.g., lengths) have been enlarged to clearly indicate layers and regions. Throughout the specification, similar parts having the same function within the same area are indicated by similar reference numerals. Throughout the specification, unless otherwise expressly stated, when an element is referred to as "comprising" or "including" another element, it means that the element may also include other elements, without excluding other elements.

[0018] In the accompanying drawings, the X direction can be defined as a first direction, a stacking direction, or a thickness direction; the Y direction can be defined as a second direction or a length direction; and the Z direction can be defined as a third direction or a width direction.

[0019] Multilayer electronic components Figure 1 This is a schematic perspective view of a multilayer electronic component according to an exemplary embodiment of the present disclosure.

[0020] Figure 2 It is along Figure 1 A schematic cross-sectional view taken from line I-I'.

[0021] Figure 3 It is along Figure 1 A schematic cross-sectional view taken from line II-II'.

[0022] Figure 4 It is a schematic breakdown diagram of the main body.

[0023] In the following text, reference will be made to Figures 1 to 4 A multilayer electronic assembly 100 according to an exemplary embodiment of the present disclosure is described in detail. Furthermore, a multilayer ceramic capacitor (hereinafter referred to as "MLCC") is described as an example of a multilayer electronic assembly, but the present disclosure is not limited thereto, and the present disclosure is applicable to various electronic products formed using ceramic materials, such as inductors, piezoelectric elements, rheostats, thermistors, etc.

[0024] According to an example embodiment of this disclosure, a multilayer electronic component 100 may include: a body 110 including a dielectric layer 111 and inner electrodes 121 and 122 alternately disposed with respect to the dielectric layer 111; and outer electrodes 131 and 132 disposed on the body 110. The inner electrodes may include a plurality of electrode portions Ep and a plurality of disconnect portions Cp, and conductive glass may be disposed in at least one of the plurality of disconnect portions Cp.

[0025] During the sintering process, due to the difference in sintering shrinkage behavior between the inner electrode and the dielectric layer, the inner electrode may break, resulting in each of the inner electrodes 121 and 122 including a break portion Cp in addition to the electrode portion Ep. Typically, the break portion Cp of the inner electrode can be formed as a hole Pp. The hole Pp can reduce the capacitance of the multilayer electronic component, can become a microcrack within the body, causing crack initiation and propagation, and allows moisture to easily penetrate into the hole. As a result, the inner electrode may become susceptible to oxidation.

[0026] In the prior art, attempts have been made to reduce the hole Pp and improve the bonding force with the dielectric layer by filling the disconnected part Cp with a dielectric, thereby suppressing delamination and cracking.

[0027] However, even when the disconnection Cp is filled with a dielectric, it may be difficult to solve problems such as the reduction in capacitance caused by the disconnection Cp.

[0028] According to this disclosure, the disconnection portion Cp may be filled with conductive glass Cg to reduce the hole Pp and increase the bonding force with the dielectric layer 111, thereby not only suppressing delamination and cracking, but also preventing the capacitance reduction caused by the disconnection portion Cp.

[0029] Furthermore, in order to suppress the disconnection Cp, the dielectric layer may fail to sinter when the material and / or sintering conditions of the inner electrode are significantly changed. However, according to exemplary embodiments of this disclosure, the disconnection Cp can be compensated for without significantly changing the sintering conditions.

[0030] In the following, each of the components included in the multilayer electronic assembly 100 according to an exemplary embodiment of the present disclosure will be described.

[0031] In the body 110, the dielectric layer 111 and the internal electrodes 121 and 122 may be stacked alternately.

[0032] The specific shape of the main body 110 is not limited. However, as Figure 1 As shown, the body 110 may have a hexahedral shape or a shape similar to a hexahedron. During the sintering process, the ceramic powder particles included in the body 110 may shrink, so that the body 110 may not have a hexahedral shape with perfectly straight lines, but may have a generally hexahedral shape.

[0033] The main body 110 may have: a first surface 1 and a second surface 2, which are opposite to each other in a first direction; a third surface 3 and a fourth surface 4, which are connected to the first surface 1 and the second surface 2, and are opposite to each other in a second direction; and a fifth surface 5 and a sixth surface 6, which are connected to the third surface 3 and the fourth surface 4, and are opposite to each other in a third direction.

[0034] Since the edge regions of the dielectric layer 111 where the inner electrodes 121 and 122 are not disposed overlap each other, a stepped portion can be formed due to the thickness of the inner electrodes 121 and 122, such that the corners connecting the first surface to the third to fifth surfaces and / or the corners connecting the second surface to the third to fifth surfaces can be centrally contracted relative to the first surface or the second surface toward the body 110 in a first direction. Optionally, due to the shrinkage behavior of the body during the sintering process, the corners connecting the first surface 1 to the third surface 3, the fourth surface 4, the fifth surface 5, and the sixth surface 6 and / or the corners connecting the second surface 2 to the third surface 3, the fourth surface 4, the fifth surface 5, and the sixth surface 6 can be centrally contracted relative to the first surface or the second surface toward the body 110 in a first direction. Optionally, to prevent peeling defects, an additional process can be performed to round the corners connecting the various surfaces of the body 110. Therefore, the corners connecting the first surface to the third to sixth surfaces and / or the corners connecting the second surface to the third to sixth surfaces can have a rounded shape.

[0035] To suppress the step portion caused by the inner electrodes 121 and 122, the inner electrodes can be stacked and then the stacked body can be cut to expose the inner electrodes on the two side surfaces of the capacitor forming portion Ac in the third direction (width direction). Thereafter, one or two or more dielectric layers can be stacked on the two side surfaces of the capacitor forming portion Ac in the third direction (width direction) to form edge portions 114 and 115. In this case, the portions connecting the first surface to the fifth and sixth surfaces and the portions connecting the second surface to the fifth and sixth surfaces do not need to be shrunk.

[0036] The plurality of dielectric layers 111 included in the body 110 may be in a sintered state, and adjacent dielectric layers 111 may be integrated with each other, making it difficult to identify the boundaries between them without the use of a scanning electron microscope (SEM). The number of dielectric layers stacked is not limited and can be determined taking into account the size of the multilayer electronic assembly. For example, the body may be formed by stacking 400 or more dielectric layers.

[0037] The dielectric layer 111 can be formed by: preparing a ceramic slurry comprising ceramic powder particles, an organic solvent, and a binder; coating the ceramic slurry onto a carrier film and drying it to prepare a ceramic green sheet; and then sintering the ceramic green sheet. The ceramic powder particles are not limited, as long as sufficient capacitance can be obtained from them, and can be, for example, barium titanate (BaTiO3)-based powder particles and CaZrO3-based paraelectric powder particles. As a more specific example, the barium titanate (BaTiO3)-based powder particles can be BaTiO3, (Ba... 1-x Ca x)TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1) and Ba(Ti 1-y Zr y )O3 (0 < y < 1), and at least one of CaZrO3-based paraelectric powder particles may be (Ca 1-x Sr x )(Zr 1-y Ti y )O3 (0 < x < 1, 0 < y < 1).

[0038] Therefore, the dielectric layer 111 may include BaTiO3, (Ba 1-x Ca x )TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1), Ba(Ti 1-y Zr y )O3 (0 < y < 1), and (Ca 1-x Sr x )(Zr 1-y Ti y )O3 (0 < x < 1, 0 < y < 1), and at least one of them.

[0039] The average thickness td of the dielectric layer 111 is not limited, but may be, for example, 10 μm or less. Additionally, the average thickness td of the dielectric layer 111 can be arbitrarily set according to the desired characteristics or uses.

[0040] The average thickness td of the dielectric layer 111 can refer to the dimension of the dielectric layer 111 disposed between the inner electrodes 121 and 122 in the first direction. For example, the average thickness td of the dielectric layer 111 can be measured by scanning the cross-section of the body 110 in the first and second directions using a SEM at a magnification of 10000. More specifically, the average thickness td of the dielectric layer 111 can be measured by measuring the thickness of one dielectric layer 111 at multiple points (e.g., thirty points spaced apart from each other at equal intervals) in the second direction and calculating the average thickness. The thirty points spaced apart from each other at equal intervals can be specified in the capacitor forming section Ac. In addition, the average thickness td of the dielectric layer 111 can be more generalized when such an average measurement is performed on ten dielectric layers 111.

[0041] The main body 110 may include: a capacitor forming portion Ac disposed in the main body 110, the capacitor forming portion Ac having a capacitor by including a first inner electrode 121 and a second inner electrode 122, the first inner electrode 121 and the second inner electrode 122 being arranged opposite to each other and a dielectric layer 111 being disposed between the first inner electrode 121 and the second inner electrode 122; and covering portions 112 and 113 disposed on the upper and lower portions of the capacitor forming portion Ac in a first direction.

[0042] Furthermore, the capacitor forming portion Ac can be a portion that contributes to the capacitance of the capacitor, and can be formed by repeatedly stacking a plurality of first internal electrodes 121 and a plurality of second internal electrodes 122 on each other, with a dielectric layer 111 between the first internal electrodes 121 and the second internal electrodes 122.

[0043] Cover portions 112 and 113 may include: an upper cover portion 112 disposed on the upper part of the capacitor forming portion Ac in the first direction; and a lower cover portion 113 disposed on the lower part of the capacitor forming portion Ac in the first direction.

[0044] The upper cover portion 112 and the lower cover portion 113 can be formed by stacking one or two or more dielectric layers on the upper and lower surfaces of the capacitor forming portion Ac in the thickness direction, respectively, and can be used to substantially prevent the internal electrode from being damaged due to physical stress and / or chemical stress.

[0045] The upper cover 112 and the lower cover 113 do not include internal electrodes and may include the same material as the dielectric layer 111.

[0046] In other words, the upper cover 112 and the lower cover 113 may include ceramic materials, and may include, for example, barium titanate (BaTiO3) based ceramic materials.

[0047] The thickness of each of the covers 112 and 113 is not limited. For example, the thickness tc of each of the covers 112 and 113 can be 200 μm or less.

[0048] The average thickness tc of each of the covers 112 and 113 may refer to the dimension of each of the covers 112 and 113 in the first direction, and may have a value obtained by averaging the dimension of each of the covers 112 and 113 in the first direction, which is measured at five points that are equally spaced apart from each other on the upper or lower part of the capacitor forming part Ac.

[0049] In addition, edge portions 114 and 115 may be respectively provided on the side surface of capacitor forming portion Ac.

[0050] Edge portions 114 and 115 may include a first edge portion 114 disposed on one side surface of the capacitor forming portion Ac in the third direction and a second edge portion 115 disposed on the other side surface of the capacitor forming portion Ac in the third direction. That is, edge portions 114 and 115 may be disposed on two side surfaces of the capacitor forming portion Ac that are opposite to each other in the third direction.

[0051] like Figure 3 As shown, the edges 114 and 115 may refer to the region between the two ends of each of the first inner electrode 121 and the second inner electrode 122 and the two surfaces of the body 110 that are opposite to each other in the third direction in a cross section of the body 110 cut along the width-thickness direction.

[0052] Edges 114 and 115 can be used to prevent damage to the internal electrode due to physical and / or chemical stress.

[0053] Edges 114 and 115 can be formed by coating conductive paste onto the portion of the ceramic green sheet other than the portion where the edge will be formed to form an internal electrode.

[0054] Furthermore, to suppress the step portion caused by the inner electrodes 121 and 122, the inner electrodes can be stacked and then the stacked body can be cut to expose the inner electrodes on the two side surfaces of the capacitor forming portion Ac in the third direction (width direction). Thereafter, one or two or more dielectric layers can be stacked on the two side surfaces of the capacitor forming portion Ac in the third direction (width direction) to form the edge portions 114 and 115.

[0055] The width of each of the edge portions 114 and 115 is not limited. For example, the average width of each of the edge portions 114 and 115 may be 200 μm or less.

[0056] The average width of each of the edge portions 114 and 115 may be the average dimension MW1 of the region between the inner electrode and the fifth surface in the third direction or the average dimension MW2 of the region between the inner electrode and the sixth surface in the third direction, and may have the average value of the dimension of each of the edge portions 114 and 115 in the third direction measured at five points spaced apart from each other at equal intervals on the side surface of the capacitor forming portion Ac.

[0057] Therefore, in the example embodiment, the regions of the inner electrodes 121 and 122 spaced apart from the fifth and sixth surfaces may each have an average size MW1 and MW2 in the third direction of the third dimension, which may be 200 μm or less.

[0058] The internal electrodes 121 and 122 may include a plurality of electrode portions Ep and a plurality of disconnect portions Cp, and the conductive glass Cg may be disposed in at least one of the plurality of disconnect portions Cp.

[0059] In existing technologies, attempts have been made to reduce the aperture Pp and improve the adhesion to the dielectric layer by filling the break portion Cp with a dielectric, thereby suppressing delamination and cracking. However, even when the break portion Cp is filled with a dielectric, problems such as the reduction in capacitance caused by the break portion Cp may still be difficult to solve.

[0060] According to an exemplary embodiment of this disclosure, the conductive glass Cg may be disposed in at least one of a plurality of disconnections Cp. Therefore, the number of holes Pp can be reduced and the bonding force with the dielectric layer 111 can be increased, thereby not only suppressing delamination and cracking, but also preventing capacitance reduction caused by the disconnections Cp.

[0061] The conductive glass Cg can possess excellent fluidity, allowing it to easily fill the break portion Cp during sintering. Furthermore, the conductive glass Cg can be conductive, thereby preventing a decrease in capacitance caused by the break portion Cp.

[0062] Figure 5 This is a schematic enlarged view of the main body before sintering. Figure 6 schematically shown Figure 5 The state after sintering.

[0063] Reference Figure 5 A conductive paste for forming internal electrodes, comprising conductive metal powder particles 20 and conductive glass powder particles 30, may be located between ceramic green sheets comprising dielectric powder particles 10. During the sintering process, the conductive metal powder particles 20 may begin to shrink earlier than the dielectric powder particles 10. (Refer to...) Figure 6 Conductive metal powder particles 20 can be sintered to form electrode portion Ep, and conductive glass powder particles 30 can be extruded to fill the break portion, so that conductive glass Cg can be disposed in the break portion.

[0064] Conductive glass refers to materials that possess both electrical conductivity and transparency. In particular, compared to other conductive glasses, conductive glasses with Si-C bonds exhibit higher thermal stability and are easier to manufacture. Si-C is commonly used as an anode material in secondary batteries, and conductive glasses with Si-C bonds are known to provide high cycle stability and high battery capacity. When conductive glasses with Si-C bonds are incorporated into conductive paste used to form the internal electrode, they can be placed in the break portion of the internal electrode to reduce electric field concentration in the break portion, thereby improving reliability.

[0065] Therefore, in the example embodiment, the conductive glass Cg may include Si and C.

[0066] Reference Figure 8 The conductive glass powder particles 30 may include a core 31 and a shell 32 covering at least a portion of the core 31. The core 31 may include Si, and the shell 32 may include C. Figure 8 The diagram shows that the shell 32 covers at least a portion of the core 31, but the shell 32 may also be configured to completely cover the core 31.

[0067] The conductive glass powder particles 30 can maintain a core-shell structure even after the sintering process, and the disconnected portion Cp can be filled by the conductive glass powder particles 30 in an aggregated form.

[0068] Therefore, in the example embodiment, the conductive glass Cg may include a core 31 and a shell 32 covering at least a portion of the core 31. The core 31 may include Si, and the shell 32 may include C.

[0069] In the example embodiment, at least one of the plurality of disconnections Cp can be formed using conductive glass Cg. That is, as... Figure 6 As shown, the disconnection Cp between electrode portions Ep can be completely filled with conductive glass Cg. However, in the example embodiment, it may not be necessary for all disconnection portions Cp to be completely filled with conductive glass Cg.

[0070] Reference Figure 7 In an example embodiment, the disconnection Cp may include at least one of conductive glass Cg, hole Pp, and dielectric Dp.

[0071] Holes Pp (empty spaces filled with air) can be areas where bonding forces cannot be formed. Dielectric Dp can be formed through diffusion of a portion of dielectric layer 111.

[0072] In an example embodiment, the dielectric Dp may include the same material as the dielectric layer 111. For example, the dielectric Dp may include BaTiO3 as a principal component. As used herein, unless otherwise stated, "principal component" means the component that has the highest content among the components constituting the composition, excluding oxygen.

[0073] The region of the inner electrode excluding the disconnection Cp can be referred to as the electrode portion Ep, and the electrode portion Ep can be formed by sintering conductive metal powder particles 20.

[0074] In an example embodiment, the electrode portion Ep may include Ni as the main component.

[0075] In an example embodiment, the inner electrodes 121 and 122 may satisfy a ratio of the length of the conductive glass to the length of the inner electrode of 0.1% to 15%. Therefore, reliability can be improved and capacitance reduction can be suppressed. The length of the conductive glass can refer to the dimension of the conductive glass in a second direction (Y direction), and the length of the inner electrode can refer to the dimension of the inner electrode in the second direction (Y direction). The dielectric layer 111 and the inner electrodes 121 and 122 may be alternately arranged in a first direction, which is a direction intersecting (e.g., perpendicular to) the second direction.

[0076] Reference Figure 7 The ratio of the length of the conductive glass to the length of the inner electrode can be defined as the ratio of the length (c1+c2+c3) occupied by the conductive glass Cg in the observation area to the total length a of the inner electrode, and can be calculated as (c1+c2+c3) / a×100%.

[0077] More specifically, the ratio of the length of the conductive glass to the length of the inner electrode can be measured by polishing the body 110 to the center of the body in a third direction to expose a cross-section of the body in the first and second directions (hereinafter referred to as the "analysis section"), and then scanning the analysis section with SEM to obtain an image of the analysis section. (Refer to...) Figure 2 In the analytical section, the capacitor-forming portion Ac can be divided into three parts in the first direction: an upper part, a middle part, and a lower part. Predetermined regions K1, K2, and K3 can be respectively located in the upper, middle, and lower parts. The internal electrodes included in regions K1, K2, and K3 can be analyzed using scanning electron microscopy-energy dispersive X-ray spectroscopy (SEM-EDS). The ratio of the total length of the conductive glass to the total length of the internal electrodes can be calculated and used as the length ratio of the conductive glass to the internal electrodes. Each of regions K1, K2, and K3 can be configured to include ten layers of internal electrodes.

[0078] In an example embodiment, the inner electrodes 121 and 122 may have an internal electrode connectivity of 75% to 95%, where internal electrode connectivity is the ratio of the length of the electrode portion Ep to the length of the inner electrode. According to an example embodiment of this disclosure, even when the internal electrode connectivity is relatively low, the decrease in capacitance can be suppressed by providing conductive glass Cg in the disconnect portion Cp.

[0079] Reference Figure 7 The internal electrode connectivity can be defined as the ratio of the sum of the lengths of the electrode portions Ep (e1+e2+e3+e4+e5) to the total length a of the internal electrode 121, and can be calculated as (e1+e2+e3+e4+e5) / a×100%.

[0080] In the example embodiment, the length ratio of the conductive glass Cg in the disconnection portion Cp can be greater than or equal to 50%. Therefore, reliability can be further improved, and the reduction in capacitance caused by the disconnection portion can be further suppressed. More preferably, the length ratio of the conductive glass Cg in the disconnection portion Cp can be greater than or equal to 70%.

[0081] Reference Figure 7 The total length of the disconnected portion Cp can be the sum of g1, g2, g3, and g4, and the total length of the conductive glass Cg can be the sum of c1, c2, and c3. Therefore, the length ratio occupied by the conductive glass Cg in the disconnected portion Cp can be calculated as (c1+c2+c3) / (g1+g2+g3+g4)×100%.

[0082] The length ratio of the hole Pp in the disconnected portion Cp can be less than or equal to 20%, and the length ratio of the dielectric Dp in the disconnected portion Cp can be less than or equal to 30%.

[0083] Reference Figure 7 The total length of the disconnected portion Cp can be the sum of g1, g2, g3, and g4, and the total length of the hole Pp can be p1. Therefore, the length ratio occupied by the hole Pp in the disconnected portion Cp can be calculated as p1 / (g1+g2+g3+g4)×100%.

[0084] Furthermore, the length ratio occupied by the dielectric Dp in the disconnected part Cp can be calculated as (d1+d2) / (g1+g2+g3+g4)×100%.

[0085] The method of placing conductive glass Cg in the break portion Cp is not limited. For example, when conductive glass Cg is added to the conductive paste used to form the inner electrodes and sintering is performed thereon, the inner electrodes 121 and 122 can be sintered, causing the inner electrodes to break. Subsequently, when the dielectric grains grow in the dielectric layer 111, the conductive glass Cg remaining in the inner electrodes 121 and 122 can be extruded, and the conductive glass Cg can fill the break portion Cp.

[0086] In an example embodiment, the inner electrodes 121 and 122 may include ceramic particles, and the ceramic particles may be disposed within the electrode portion Ep. The ceramic particles may be added to a conductive paste used to form the inner electrodes. During the sintering process, the ceramic particles may be bound within the electrode portion Ep. Even after the sintering process, the ceramic particles may still be disposed within the electrode portion Ep.

[0087] In an example embodiment, the dielectric layer 111 and the inner electrodes 121 and 122 may be alternately arranged in the first direction, and the break portion Cp may be arranged to pass through the inner electrode in the first direction.

[0088] When the break portion Cp is configured to pass through the inner electrodes 121 and 122 in the first direction, cracks may be more likely to occur. Therefore, when the break portion Cp is configured to pass through the inner electrodes 121 and 122 in the first direction, this disclosure can have a more significant effect in suppressing crack initiation and propagation.

[0089] In an example embodiment, the conductive glass Cg may be configured to connect adjacent dielectric layers 111a and 111b to each other. This improves the bonding strength between dielectric layers 111a and 111b, thereby increasing the strength of the multilayer electronic assembly, suppressing delamination and cracking, and improving moisture resistance reliability.

[0090] The inner electrodes 121 and 122 may include a first inner electrode 121 and a second inner electrode 122. The first inner electrode 121 and the second inner electrode 122 may be alternately arranged opposite each other and a dielectric layer 111 included in the body 110 is located between the first inner electrode 121 and the second inner electrode 122, and the first inner electrode 121 and the second inner electrode 122 may be exposed on the third surface 3 and the fourth surface 4 of the body 110, respectively.

[0091] The first inner electrode 121 may be spaced apart from the fourth surface 4 and exposed through the third surface 3, and the second inner electrode 122 may be spaced apart from the third surface 3 and exposed through the fourth surface 4. The first outer electrode 131 may be disposed on the third surface 3 of the body and connected to the first inner electrode 121, and the second outer electrode 132 may be disposed on the fourth surface 4 of the body and connected to the second inner electrode 122.

[0092] That is, the first inner electrode 121 is not connected to the second outer electrode 132 but can be connected to the first outer electrode 131, and the second inner electrode 122 is not connected to the first outer electrode 131 but can be connected to the second outer electrode 132. Therefore, the first inner electrode 121 can be formed to be spaced apart from the fourth surface 4 by a predetermined distance, and the second inner electrode 122 can be formed to be spaced apart from the third surface 3 by a predetermined distance. Furthermore, the first inner electrode 121 and the second inner electrode 122 can be configured to be spaced apart from the fifth and sixth surfaces of the body 110.

[0093] The conductive metal included in the inner electrodes 121 and 122 may include at least one selected from the group consisting of Ni, Cu, Pd, Ag, Au, Pt, In, Sn, Al, Ti and alloys thereof, but this disclosure is not limited thereto.

[0094] The method for forming the internal electrodes 121 and 122 is not limited. For example, the internal electrodes 121 and 122 can be formed by applying a conductive paste, comprising a conductive metal and a conductive glass, for forming the internal electrodes onto a ceramic green sheet and sintering it. The conductive metal can form the electrode portion Ep after sintering. The conductive paste for forming the internal electrodes can be applied using screen printing or gravure printing, but this disclosure is not limited thereto.

[0095] The average thickness te of the inner electrodes is not limited. In this case, the thickness of each of the inner electrodes 121 and 122 can refer to the dimension of each of the inner electrodes 121 and 122 in the first direction. For example, the average thickness te of each of the inner electrodes 121 and 122 can be 5.0 μm or less.

[0096] Here, the average thickness *te* of the inner electrodes can be measured by scanning the cross-section of the body 110 in the first and second directions using a SEM at a magnification of 10,000. More specifically, the thickness at multiple points (e.g., thirty points spaced apart from each other at equal intervals) of each of the inner electrodes 121 and 122 in the second direction can be measured to determine their average value. The thirty points spaced apart from each other at equal intervals can be specified in the capacitor forming section *Ac*. Furthermore, when such an average value measurement is performed on ten inner electrodes 121 or ten inner electrodes 122, the average thickness of each of the inner electrodes 121 and 122 can be more generalized.

[0097] External electrodes 131 and 132 may be disposed on the main body 110 and connected to internal electrodes 121 and 122.

[0098] like Figure 2 As shown, the outer electrodes 131 and 132 may be disposed on the third surface 3 and the fourth surface 4 of the body 110, respectively, and may include the first outer electrode 131 and the second outer electrode 132 connected to the first inner electrode 121 and the second inner electrode 122, respectively.

[0099] In this example embodiment, a structure is described in which a multilayer electronic component 100 has two external electrodes 131 and 132, but the number and shape of the external electrodes 131 and 132 may be changed depending on the form of the internal electrodes 121 and 122 or for other purposes.

[0100] Each of the external electrodes 131 and 132 can be formed using any conductive material (such as metal), and the specific material can be determined taking into account electrical properties, structural stability, etc. Furthermore, each of the external electrodes 131 and 132 can have a multilayer structure.

[0101] For example, the external electrodes 131 and 132 may include electrode layers 131a and 132a disposed on the body 110 and plating layers 131b and 132b formed on the electrode layers 131a and 132a.

[0102] As a more specific example of electrode layers 131a and 132a, electrode layers 131a and 132a may be sintered electrodes comprising conductive metal and glass, or they may be resin-based electrodes comprising conductive metal and resin.

[0103] Furthermore, electrode layers 131a and 132a may have a form in which a sintered electrode and a resin-based electrode are sequentially formed on the body. Additionally, electrode layers 131a and 132a can be formed by transferring a sheet including a conductive metal onto the body or by transferring a sheet including a conductive metal onto a sintered electrode.

[0104] Materials with excellent electrical conductivity can be used as conductive metals included in electrode layers 131a and 132a, but such materials are not limited. For example, the conductive metal can be at least one selected from the group consisting of nickel (Ni), copper (Cu), and alloys thereof.

[0105] Platings 131b and 132b can be used to improve mounting characteristics. The type of each of platings 131b and 132b is not limited, and each of platings 131b and 132b can be a plating comprising at least one selected from the group consisting of Ni, Sn, Pd and alloys thereof, and each of platings 131b and 132b can be formed as a multilayer.

[0106] As a more specific example of plating layers 131b and 132b, each of plating layers 131b and 132b may be a Ni plating layer or a Sn plating layer, and may have a form in which the Ni plating layer and the Sn plating layer are sequentially formed on the electrode layers 131a and 132a, and may have a form in which the Sn plating layer, the Ni plating layer, and the Sn plating layer are sequentially formed. Additionally, each of plating layers 131b and 132b may include multiple Ni plating layers and / or multiple Sn plating layers.

[0107] While exemplary embodiments have been shown and described above, those skilled in the art will readily understand that modifications and variations may be made without departing from the scope of this disclosure as defined by the appended claims.

[0108] Furthermore, the term "example embodiment" as used herein does not refer to the same example embodiment, but is provided to emphasize a particular feature or characteristic that differs from a particular feature or characteristic of another example embodiment. However, the example embodiments provided herein are considered to be implementable by combining them entirely or partially with each other. For example, a component described in a particular example embodiment may be understood as a description relating to another example embodiment, even if it is not described in another example embodiment, unless a contrary or contradictory description is provided in another example embodiment.

[0109] The terminology used herein is for the purpose of describing particular exemplary embodiments only and is not intended to limit the exemplary embodiments. As used herein, unless the context clearly indicates otherwise, the singular form is intended to include the plural form as well.

Claims

1. A multilayer electronic component, comprising: The main body includes a dielectric layer and internal electrodes alternately disposed with the dielectric layer; as well as External electrodes are disposed on the main body; The internal electrode includes multiple electrode portions and multiple disconnect portions, and Conductive glass is disposed in at least one of the plurality of disconnections.

2. The multilayer electronic component according to claim 1, in, The inner electrode satisfies that the ratio of the length of the conductive glass to the length of the inner electrode is 0.1% to 15%.

3. The multilayer electronic component according to claim 1, wherein, The conductive glass comprises Si and C.

4. The multilayer electronic component according to claim 1, wherein, The conductive glass includes a core and a shell covering at least a portion of the core. The core comprises Si, and The shell includes C.

5. The multilayer electronic component according to claim 1, wherein, The disconnection portion includes at least one of a hole, a dielectric, and the conductive glass.

6. The multilayer electronic assembly according to claim 1, wherein, The dielectric layer and the internal electrode are alternately arranged in a first direction, and The disconnection is configured to pass through the inner electrode in the first direction.

7. The multilayer electronic assembly according to claim 1, wherein, The conductive glass has Si-C bonds.

8. The multilayer electronic component according to claim 1, wherein, The conductive glass is configured to connect adjacent dielectric layers to each other.

9. The multilayer electronic component according to claim 1, wherein, At least one of the plurality of disconnected portions is composed of the conductive glass.

10. The multilayer electronic assembly according to claim 1, wherein, The inner electrode satisfies that the ratio of the length of the electrode portion to the length of the inner electrode is 75% to 95%.

11. The multilayer electronic component according to claim 1, in, The inner electrode satisfies the requirement that the length ratio of the conductive glass in the disconnected portion is greater than or equal to 50%.

12. The multilayer electronic assembly according to claim 1, wherein, The electrode portion includes Ni as its main component.

13. The multilayer electronic assembly according to claim 5, wherein, The dielectric includes the same material as the material included in the dielectric layer.

14. The multilayer electronic assembly according to claim 5, wherein, The dielectric comprises BaTiO3 as the main component.

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