HOUSING STRUCTURE FOR POWER SUPPLY DEVICE

Abstract

A housing structure (100) for power devices includes a heat-dissipating insulating substrate (102), a plurality of power devices (104), at least one conductive clamp (106), and a heat-dissipating base plate (108). The heat-dissipating insulating substrate (102) has a first surface (102a) and a second surface (102b) opposite it, and the power devices (104) form a bridge circuit topology and are arranged on the first surface (102a), with active regions (104a) of at least one of the power devices (104) being connected by flip-chip to the first surface (102a). The conductive clamp (106) is configured to electrically connect at least one of the power supply devices (104) to the first surface (102a), and the heat dissipation base plate (108) is disposed at the second surface (102b) of the heat dissipation insulating substrate (102).Figure from the summary: Figure 1.

Description

Title of the invention: HOUSING STRUCTURE FOR POWER SUPPLY DEVICE Field of invention

[0001] The present invention relates to a housing structure, and in particular, to a housing structure for power supply devices. Description of related art

[0002] Currently, a power module is a main central apparatus for electric power conversion in various products, inside which power devices are packaged. At an early stage, an aluminum (Al) metal wire is used as a connecting line between chips in the power module, and the excessive parasitic inductance and parasitic impedance result in high electric power conversion loss and uneven current distribution. PRESENTATION OF THE INVENTION

[0003] Provided is a housing structure for power supply devices, which can solve the problem of electric power conversion loss caused by the excessive parasitic effect of the conventional power module.

[0004] The invention further provides a package structure for power devices, which can reduce the leakage inductance and thermal resistance of the power module.

[0005] The package structure for power devices of the invention includes an insulating heat dissipation substrate, a plurality of power devices, at least one conductive clip, and a heat dissipation base plate. The insulating heat dissipation substrate has a first surface and a second surface opposite thereto. The power devices form a bridge circuit topology and are disposed on the first surface, with active regions of at least one of the power devices being flip-chip bonded to the first surface. The conductive clip is configured to electrically connect at least one of the power devices to the first surface. The heat dissipation base plate is disposed at the second surface of the insulating heat dissipation substrate.

[0006] According to one embodiment of the invention, a conductive clamp electrically connects one or more of the power supply devices to the heat-dissipating insulating substrate and is disposed at an opposite side of the power supply device opposite a side where the power supply device is bonded to the substrate. heat dissipation insulator.

[0007] According to one embodiment of the invention, a material of the conductive clamp includes aluminum, copper or graphite.

[0008] According to one embodiment of the invention, the plurality of feeders include, for example, vertical feeders, active regions of the vertical feeders are flip-chip bonded to the first surface, and the at least one conductive clip electrically connects non-active regions of the vertical feeders to the first surface.

[0009] According to one embodiment of the invention, the heat dissipation insulating substrate includes a direct bonded copper (DBC) ceramic substrate, a direct plated copper (DPC) ceramic substrate, an insulating metal substrate (IMS) or a printed circuit board (PCB).

[0010] According to one embodiment of the invention, the heat dissipation insulating substrate comprises a patterned circuit which contains a plurality of electrical functions and is electrically connected to the at least one conductive clip, and the patterned circuit is electrically connected to the plurality of power supply devices.

[0011] According to one embodiment of the invention, a conductive clip can connect the patterned circuit of different electrical functions.

[0012] According to one embodiment of the invention, the second surface of the heat dissipation insulating substrate is monolithically formed with the heat dissipation base plate or is in thermal contact with the heat dissipation base plate.

[0013] Another package structure for power devices of the invention includes: an insulating heat dissipation substrate, a plurality of vertical power devices, and at least one conductive clip. The plurality of vertical power devices form a bridge circuit topology, and active regions of at least one of the vertical power devices are flip-chip bonded to the insulating heat dissipation substrate. The conductive clip electrically connects non-active regions of the vertical power devices, which are flip-chip bonded to the insulating heat dissipation substrate, to the insulating heat dissipation substrate.

[0014] According to another embodiment of the invention, the heat dissipation insulating substrate comprises a patterned circuit which contains a plurality of electrical functions and is electrically connected to the at least one conductive clamp, and the patterned circuit is electrically connected to the plurality of vertical power devices.

[0015] According to another embodiment of the invention, a conductive clip connects the patterned circuit of different electrical functions.

[0016] According to another embodiment of the invention, the housing structure for dis The power supply positives further includes a heat dissipation base plate disposed at another surface of the heat dissipation insulating substrate other than a surface where the heat dissipation insulating substrate is bonded to the plurality of vertical power supply devices.

[0017] According to another embodiment of the invention, the heat dissipation insulating substrate is monolithically formed with the heat dissipation base plate or is in thermal contact with the heat dissipation base plate.

[0018] Based on the above facts, the package structure for power devices of the invention is a connection configuration where the power device is directly flip-chip bonded to the heat dissipation substrate, and the conductive clip is used to replace the aluminum metal line as a circuit, thereby achieving the effects of reducing the leakage inductance and thermal resistance of the power module due to low parasitic impedance and parasitic inductance of the heat dissipation substrate and the conductive clip, so as to reduce the electric power conversion loss and distribute the current more evenly.

[0019] In order to make the above-mentioned and other objectives and advantages of the invention understandable, embodiments accompanied by figures are described in detail below. PRESENTATION OF FIGURES

[0020] [fig. 1] is a sectional view of a housing structure for power supply devices according to a first embodiment of the invention.

[0021] [fig.2] is a sectional view of another housing structure for devices power supply according to the first embodiment.

[0022] [fig.3] is a sectional view of a housing structure for power supply devices according to a second embodiment of the invention.

[0023] [fig.4A] is a plan view of a housing structure for power supply devices constituting a half-bridge circuit according to the first embodiment.

[0024] [fig.4B] is a circuit diagram of a device with a different phase half-bridge circuit topology composed of three of the structures illustrated in [fig.4A].

[0025] [fig.4C] is an electrical loop diagram of a circuit of [fig.4B].

[0026] [fig.5] is a half-bridge circuit diagram. DETAILED DESCRIPTION OF THE INVENTION

[0027] Many different implementations or examples are provided by the following disclosed content for implementing different features of the invention. Of course, these embodiments are only examples and are not intended to limit the scope and application of the invention. In addition, the thicknesses and relative positions of components, films or regions may be reduced or enlarged for clarity. In addition, the same or similar reference numerals are used in the accompanying drawings to indicate the same or similar elements or features. Reference numeral details that appear in only one drawing may be omitted in the description of subsequent drawings.

[0028] [Fig. 1] is a sectional view of a housing structure for power supply devices according to a first embodiment of the invention.

[0029] Referring to [fig.l], a package structure 100 for power devices of the present embodiment includes a heat-dissipating insulating substrate 102, a plurality of power devices 104, at least one conductive clip 106, and a heat-dissipating base plate 108. The heat-dissipating insulating substrate 102 has a first surface 102a and a second surface 102b opposite thereto. The power devices 104 form a bridge circuit topology (including a half-bridge or full-bridge circuit topology) and are disposed on the first surface 102a, with active regions 104a of at least one of the power devices 104 being flip-chip bonded to the first surface 102a.According to one embodiment, the power supply device 104 is, for example, a vertical power supply device, and therefore the active regions (i.e., 104a) of the vertical power supplies are flip-chip bonded to the first surface 102a. The heat-dissipating insulating substrate 102 is, for example, a direct bond copper (DBC) ceramic substrate, a direct plated copper (DPC) ceramic substrate, an insulating metal substrate (IMS), or a printed circuit board (PCB).

[0030] According to the first embodiment, the conductive chip 106 is configured to electrically connect at least one of the power devices 104 to the first surface 102a, the material of the conductive clip 106 being, for example, aluminum, copper or graphite. Furthermore, a conductive clip 106 can electrically connect a plurality of power devices 104 to the heat dissipation insulating substrate 102 and is disposed at an opposite side 104b of the power device 104 opposite to a side where the power device 104 is bonded to the heat dissipation insulating substrate 102. However, the invention is not limited thereto, a conductive clip 106 can also only electrically connect one power device 104 to the heat dissipation insulating substrate 102.According to one embodiment, if the feeder 104 is a vertical feeder, a portion of the conductive clamp 106 may electrically connect the non-active regions of the vertical feeders, and the other portion of the conductive clamp 106 may electrically connect the first surface 102a. In addition, a mutual electrical connection may be formed between the . first surface 102a and the conductive clip 106 due to a first conductive connection layer 110, and a mutual electrical connection can be formed between the power supply device 104 and the conductive clip 106 due to a second conductive connection layer 112, but the invention is not limited thereto. The first conductive connection layer 110 and the second conductive connection layer 112 are, for example, sintered silver layers or other conductive connection layers.

[0031] Referring again to [fig.l], the heat dissipation insulating substrate 102 has a patterned circuit 114, and the patterned circuit 114 is formed on an insulating material board 116. The second surface 102b of the heat dissipation insulating substrate 102 may be provided with an entire lower circuit layer 118. For example, solder joints 120 are formed on pads (not shown) of each power device 104, and the solder joints 120 are configured to directly face the patterned circuit 114 of the heat dissipation insulating substrate 102 by using flip-chip bonding technology to achieve the connection of the power device 104 and the heat dissipation insulating substrate 102.The patterned circuit 114 may include a plurality of electrical functions and is electrically connected to the conductive clip 106, and the patterned circuit 114 is electrically connected to the power device 104. According to one embodiment, a conductive clip 106 may connect the patterned circuit 114 of different electrical functions.

[0032] The heat dissipation base plate 108 is disposed at the second surface 102b of the heat dissipation insulating substrate 102, and may be mutually electrically connected via a third conductive connection layer 122, the third conductive connection layer 122 being, for example, a sintered silver layer or other conductive connection layers. However, the invention is not limited thereto.

[0033] The second surface 102b of the heat dissipation insulating substrate 102 may also be monolithically formed with a heat dissipation base plate 200 or be in thermal contact with the heat dissipation base plate 200, as illustrated in [fig.2]. That is, the heat dissipation base plate 200 and the lower circuit layer 118 of the heat dissipation insulating substrate 102 may be in a monolithically formed or thermally contacted configuration.

[0034] [Fig. 3] is a sectional view of a housing structure for power supply devices according to a second embodiment of the invention, in which component symbols and parts of the contents of the previous embodiment are used, in which the same component symbols are used to re present the same or similar components, and the description of the same technical content is omitted. Reference may be made to the previous embodiment for descriptions of the omitted parts, which will not be repeated in the present embodiment.

[0035] Referring to [fig. 3], a package structure 300 for power devices of the present embodiment includes a heat-dissipating insulating substrate 102, a plurality of vertical power devices 302, and at least one conductive clip 106. The plurality of vertical power devices 302 form a bridge circuit topology, and active regions 302a of at least one of the vertical power devices 302 are flip-chip bonded to the heat-dissipating insulating substrate 102. The conductive clip 106 electrically connects non-active regions 302b of the vertical power devices 302, which are flip-chip bonded to the heat-dissipating insulating substrate 102, to the heat-dissipating insulating substrate 102.According to one embodiment, the housing structure 300 for power devices may also include a heat dissipation base plate (not shown) disposed at another surface of the heat dissipation insulating substrate 102 other than a surface where the heat dissipation insulating substrate 102 is bonded to the vertical power device 302. According to another embodiment, the heat dissipation insulating substrate 102 may be monolithically formed with the heat dissipation base plate or be in thermal contact with the heat dissipation base plate (not shown).

[0036] [Fig.4A] is a plan view of a housing structure for power supply devices constituting a half-bridge circuit according to the first embodiment.

[0037] Referring to [Fig.4A], a heat dissipation insulating substrate 400 has a patterned circuit 402. The patterned circuit 402 contains a plurality of electrical functions and is electrically connected to a plurality of conductive clips 404a and 404b, and the patterned circuit 402 is respectively electrically connected to vertical power devices 406a, 406b, 406c, 406d, 406e, 406f, 406g and 406h. That is, if [Fig.4A] is taken as an example, one conductive clip 404a can connect the patterned circuit 402 of different electrical functions to four vertical power devices 406a, 406b, 406c and 406d; another conductive clamp 404b can connect the patterned circuit 402 of different electrical functions to four other vertical feeders 406e, 406f, 406g and 406h. Although the vertical feeders 406a to 406h of [fig.4A] are illustrated by rectangular frames, it should be noted that the power devices contained in the regions of the rectangular frames may be the same or different, for example, a set of power devices of . combination of an insulated gate bipolar transistor (IGBT) and a fast recovery diode (FRD). The heat dissipation base plate is not shown in [fig.4A], but it should be noted that the heat dissipation base plate is disposed at the rear surface of the heat dissipation insulating substrate 400.

[0038] [Fig.4B] is a circuit diagram of a device with a different phase half-bridge circuit topology composed of three of the structure shown in [Fig.4A]. [Fig.4C] is an electrical loop diagram of a circuit in [Fig.4B].

[0039] In [Fig. 4B], an inverter 40 is arranged in a path where a high-voltage battery HV supplies electricity to a motor M, the circuit of which includes a half-bridge circuit topology having three different phases, and the half-bridge circuit topology of each phase may use a structure of [Fig. 4A]. Thus, when the high-voltage battery HV supplies electricity to the motor M, the current loop thereof flows to the motor M via a high-side loop 408 of a specific phase in [Fig. 4A] and [Fig. 4C], then flows from the motor M to a low-side loop 410 of another specific phase, and finally flows to the high-voltage battery HV, so as to form a whole loop.

[0040] The above circuits are only one embodiment of the housing structure for power supply devices of the invention and are not intended to limit the scope of application of the invention.

[0041] If the half-bridge circuit of [fig.5] is taken as an example, the parasitic inductance LsCE = L11 + L12 + L13 + L14. Therefore, the parasitic inductance LsCE of the conventional half-bridge circuit using wire bonding is about 5.55 nH, while the parasitic inductance LsCE of the half-bridge circuit of the invention using the conductive clamp (such as 106 in [fig.l]) combined with the flip-chip bonding technology is 4.45 nH. Therefore, the package structure for power devices of the invention can reduce by 20% in the aspect of parasitic inductance. Since the overvoltage AV = L(di / dt), if the parasitic inductance decreases, the overvoltage will naturally decrease. Therefore, the package structure for power devices of the invention can also reduce the overvoltage.

[0042] In addition, since the surface area and the thermal conductivity coefficient of the conductive clip (such as a copper clip) are both larger than those of conventional aluminum metal wires for wire bonding, the thermal resistance (RJF) can be reduced from 0.14°C / W in the case of conventional wiring to 0.10°C / W in the case of using the conductive clip, with the thermal resistance drop being up to 30%.

[0043] Based on the above facts, according to the invention, the power supply devices are directly bonded to the heat dissipation insulating substrate through the technology flip chip bonding, and the conductive clamp is used as the connection configuration of the circuit. Therefore, due to the properties of the heat dissipation insulating substrate and the conductive clamp, such as low parasitic impedance and low parasitic inductance, the leakage inductance and thermal resistance of the power module can be reduced, which further reduces the electrical power conversion loss, distributes the current more evenly, and decreases the overvoltage.

Claims

Claims

1. A package structure (100, 300) for power devices, comprising: a heat-dissipating insulating substrate (102, 400), comprising a first surface (102a), a second surface (102b) opposite thereto, the second surface (102b) having a lower circuit layer (118); a plurality of power devices (104) forming a bridge circuit topology and disposed on the first surface (102a), wherein active regions (104a, 302a) of at least one of the power devices (104) are flip-chip bonded to the first surface (102a); at least one conductive clip (106, 404a, 404b), configured to electrically connect at least one of the power devices (104) to the first surface (102a);and a heat dissipation base plate (200), disposed at the second surface (102b) of the heat dissipation insulating substrate (102, 400), the lower circuit layer (118) of the heat dissipation insulating substrate (102) being monolithically formed with the heat dissipation base plate (200).;

2. A package structure (100, 300) for power devices according to claim 1, wherein a conductive clip (106, 404a, 404b) electrically connects one or more of the power devices (104) to the heat dissipation insulating substrate (102, 400) and is disposed at an opposite side (104b) of the power device (104) opposite to a side where the power device (104) is bonded to the heat dissipation insulating substrate (102, 400).

3. A housing structure (100, 300) for power devices according to claim 1, wherein a material of the conductive clip (106, 404a, 404b) comprises aluminum, copper or graphite.

4. The package structure (100, 300) for power devices according to claim 1, wherein the plurality of power devices (104) comprise vertical power devices (302, 406a, 406b, 406c, 406d, 406e, 406f, 406g, 406h), active regions (104a, 302a) of the vertical power devices (302, 406a, 406b, 406c, 406d, 406e, 406f, 406g, 406h) are flip-chip bonded to the first surface (102a), and the at least one conductive clip (106, 404a, 404b) electrically connects non-active regions (302b) of the vertical feeders (302, 406a, 406b, 406c, 406d, 406e, 406f, 406g, 406h) to the first surface (102a).

5. A package structure (100, 300) for power devices according to claim 1, wherein the heat-dissipating insulating substrate (102, 400) comprises a direct bonded copper ceramic substrate (DBC), a direct plated copper ceramic substrate (DPC), an insulating metal substrate (IMS) or a printed circuit board (PCB).

6. The package structure (100, 300) for power devices according to claim 1, wherein the heat dissipation insulating substrate (102, 400) comprises a patterned circuit (114, 402), the patterned circuit (114, 402) contains a plurality of electrical functions and is electrically connected to the at least one conductive clip (106, 404a, 404b), and the patterned circuit (114, 402) is electrically connected to the plurality of power devices (104).

7. A housing structure (100, 300) for power devices according to claim 6, wherein a conductive clip (106, 404a, 404b) connects the patterned circuit (114, 402) of different electrical functions.

8. A package structure (100, 300) for power supply devices, comprising: a heat dissipation insulating substrate (102, 400) comprising a lower circuit layer (118) provided inside a surface (102b) of the heat dissipation insulating substrate (102, 400); a plurality of vertical power devices (302, 406a, 406b, 406c, 406d, 406e, 406f, 406g, 406h) forming a bridge circuit topology, wherein active regions (104a, 302a) of at least one of the vertical power devices (302, 406a, 406b, 406c, 406d, 406e, 406f, 406g, 406h) are flip-chip bonded to another surface (102a) of the heat-dissipating insulating substrate (102, 400) distinct from the surface (102b) having the lower circuit layer (118);at least one conductive clamp (106, 404a, 404b), electrically connecting non-active regions (302b) of the vertical power devices (302, 406a, 406b, 406c, 406d, 406e, 406f, 406g, 406h), which are flip-chip bonded to the heat dissipation insulating substrate (102, 400), to the heat dissipation insulating substrate (102, 400); and a heat dissipation base plate (200), disposed on the surface; (102b) of the heat dissipation insulating substrate (102, 400), the lower circuit layer (118) of the heat dissipation insulating substrate (102) being monolithically formed with the heat dissipation base plate (200).

9. The housing structure (100, 300) for power devices according to claim 8, wherein the heat dissipation insulating substrate (102, 400) comprises a patterned circuit (114, 402), the patterned circuit (114, 402) contains a plurality of electrical functions and is electrically connected to the at least one conductive clip (106, 404a, 404b), and the patterned circuit (114, 402) is electrically connected to the plurality of vertical power devices (302, 406a, 406b, 406c, 406d, 406e, 406f, 406g, 406h).

10. A housing structure (100, 300) for power devices according to claim 9, wherein a conductive clip (106, 404a, 404b) connects the patterned circuit (114, 402) of different electrical functions.

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