Optoelectronic device and manufacturing method
By employing a three-dimensional nanowire architecture with superimposed emitting layers in optoelectronic devices, the challenges of reducing pixel size and enhancing light extraction efficiency are addressed, resulting in high-resolution screens with improved performance.
FR3137242B1Active Publication Date: 2025-06-20ALEDIA INC
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Patent Information
- Application Number
- FR2022006464
- Authority / Receiving Office
- FR · FR
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2022-06-28
- Publication Date
- 2025-06-20
- Estimated Expiration
- 2042-06-28
AI Technical Summary
Technical Problem
Existing optoelectronic devices face challenges in reducing pixel size below 50 pm while maintaining high light extraction efficiency, due to complex architectures and decreased light extraction efficiency in stacked LED solutions.
Method used
The development of an optoelectronic device with a three-dimensional architecture based on nanowires, where emitting layers are at least partly superimposed and feature nanowires forming a photonic crystal, enhancing light directivity and extraction efficiency.
Benefits of technology
This solution allows for the creation of high-resolution screens with pixel sizes less than or equal to 50 pm, achieving improved light extraction efficiency and enhanced emission directivity, suitable for augmented reality applications.
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Abstract
Title: Optoelectronic device and manufacturing method The subject of the invention is an optoelectronic device comprising a plurality of emitting layers (1, 2, 3) stacked in a z direction comprising at least: • A first emitting layer (1) configured to emit radiation at a wavelength λ1, • A second emitting layer (2) configured to emit radiation at a wavelength λ2 different from λ1, said emitting layers (1, 2, 3) being superimposed in projection in the z direction, Advantageously, each of the emitting layers (1, 2, 3) comprises a set (10, 20, 30) of nanowires (100, 200, 300) oriented longitudinally in the z direction forming the active part of the emitting layer (1, 2, 3). The subject of the invention is also a method for manufacturing such a device. Figure for abstract: Fig. 3
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