SYSTEM COMPRISING A LIGHT SOURCE ON A HIGH OPTICAL INDEX SUBSTRATE AND ASSOCIATED METHOD

Abstract

SYSTEM COMPRISING A LIGHT SOURCE ON A HIGH-OPTICAL-INDEX SUBSTRATE AND ASSOCIATED METHOD The invention relates to a system (6) comprising: a light source (1) configured to exhibit at least one stationary mode of an electromagnetic field parallel to a plane (P); a substrate (2), parallel to the plane (P) and having a high optical index; and an anti-resonant reflector (3) for said at least one stationary mode, said reflector extending over the substrate (2), the source (1) extending over the reflector (3). Figure to be published with the abstract: Figure 1

Description

Title of the invention: SYSTEM COMPRISING A LIGHT SOURCE ON A HIGH OPTICAL INDEX SUBSTRATE AND ASSOCIATED METHOD TECHNICAL FIELD OF THE INVENTION

[0001] The technical field of the invention is that of the integration of a light source on a substrate having a high optical index. TECHNOLOGICAL BACKGROUND OF THE INVENTION

[0002] Light sources that can be integrated onto a substrate have multiple applications, such as the photoacoustic detection of chemical compounds. In order to take advantage of the benefits offered by several distinct technologies, it is sought to integrate light sources manufactured using a particular technology onto a substrate not derived from this technology. This is referred to as “hybrid” technology. For example, the integration of so-called “III-V” light sources onto a silicon semiconductor substrate is cited.

[0003] III-V light sources are made from a semiconductor alloy also called "III-V", that is to say composed of a semiconductor material belonging to group III (column 13 of the periodic table of elements) and a semiconductor material belonging to group V (column 15 of the periodic table of elements). Frequent alloys include for example ITnP, InAs, GaAs, GaN, or even InSb. IILV light sources are good candidates for emitting in a beam in a wide spectral range, such as the mid-infrared. These sources, however, have strong integration constraints, in particular when they must be integrated into the silicon substrate.

[0004] A laser-type light source, whether of the IILV type or not, comprises a cavity formed by a stack of layers comprising a so-called "active" or "amplifying" region and two semiconductor layers called "cladding" in English. The active region is configured to emit an electromagnetic field, by spontaneous and / or stimulated emission. The cladding layers are adjacent to the active region and arranged on either side of it to confine certain modes of the electromagnetic field, called "guided modes". In order to effectively confine the guided mode(s), the cladding layers have optical indices strictly lower than the average optical index of the active region. For example, when the active region is composed of a multilayer of InGaAs / AlInAs or InAlAs / AlGalnAs, the cladding layers are then made of InP.

[0005] The light source, directly placed on an Si substrate, can undergo strong optical losses, which are a handicap for its use. Indeed, silicon has a higher optical index than III-V materials, such as InP, and therefore higher than cladding layers. Thus, without special arrangements and when the penetration of the guided mode into the cladding layers is significant, said guided mode can couple to the Si substrate and reduce the effectiveness of the confinement offered by the cladding layers.

[0006] In order to overcome this problem, it is proposed that the cladding layer separating the active region from the Si substrate, called the lower cladding layer, be relatively thick. It thus makes it possible to compensate for the penetration depth of the guided mode in the cladding layers and reduce the coupling of the guided mode with the Si substrate. For a guided mode having a wavelength of 4.5 pm, the thickness of the lower cladding layer must reach at least 3.5 pm. This represents a significant cost in terms of raw material and also an additional constraint on the integration of the source. For a guided mode having a wavelength greater than 10 pm (far infrared), the thickness of the lower cladding layer should be greater than 20 pm, which can further complicate the integration of the source.

[0007] A solution proposed by the document [Coutard, JG, Brun, M., Fournier, M. et al. “Volume Fabrication of Quantum Cascade Lasers on 200 mm-CMOS pilot line”. Sci Rep 10, 6185 (2020)], avoiding the thickening of the lower cladding layer, consists of inserting a low optical index layer between the lower cladding layer and the Si substrate. Said low index layer acts as a barrier to the propagation of the guided mode in the Si substrate and makes it possible to reduce the thickness of the lower cladding layer. This low index layer is, for example, made of oxide or nitride. If the decoupling between the IILV source and the Si substrate is effective for a guided mode having a wavelength less than 4 pm, the observation is different when the guided mode has a longer wavelength.Indeed, oxides or nitrides induce high losses when the wavelength of the guided mode is greater than 4 pm, which greatly limits the spectral range of the source.

[0008] There is therefore a need to provide a means of integrating a light source capable of operating in a wide spectral range, such as an IILV source, onto a substrate having a high optical index, such as an Si substrate. Summary of the invention

[0009] The invention makes it possible to solve the aforementioned problems by implementing an anti-resonant reflector arranged between the light source and the substrate. Since the reflector is based on interference conditions, it can be made of materials that do not absorb the radiation emitted by the source. The light source can therefore operate in a wide spectral range.

[0010] More particularly, the invention relates to a system (6) comprising: • a substrate extending parallel to a plane, said substrate having an optical index w2; • a light source configured to present at least one stationary mode of an electromagnetic field, said mode being parallel to the plane, the source also being configured to present, for said at least one stationary mode, an effective optical index ^eff such that weff n2-

[0011] The system is remarkable in that it also comprises an antiresonant reflector for said at least one stationary mode, said reflector extending over the substrate and the source extending over the reflector, the reflector comprising at least one semiconductor bilayer extending parallel to the plane, said at least one bilayer comprising: a first semiconductor sub-layer and a second semiconductor sub-layer, extending against the first sub-layer, the first sub-layer being arranged between the source and the second layer-layer, the first and second sub-layers respectively having optical indices / z30i and n302 such that W301 > w302 and ^301 > the first sub-layer also having a thickness d30l configured to form an anti-resonant cavity for said at least one stationary mode.

[0012] By stationary mode is meant a mode of an electromagnetic field which is confined in a resonant cavity.

[0013] By mode parallel to the plane, it can be understood that the electromagnetic field is transverse to the plane. By electromagnetic mode transverse to the plane, it can be understood that the guided mode has, exclusively, an electric polarization of the electromagnetic field normal to the plane or a magnetic polarization of the magnetic field normal to the plane.

[0014] By optical index, we also mean refractive index.

[0015] By effective optical index is meant the optical index seen by the stationary mode in the source.

[0016] By "reflector extending on the substrate" is meant that the reflector and the substrate are opposite each other and that the substrate can extend, either directly against the substrate, or be separated from the substrate by an intermediate layer.

[0017] By anti-resonant reflector, it is meant that the reflector is based on the principle of destructive interference of said at least one stationary mode, blocking the transmission of the guided mode through the substrate.

[0018] By “thickness c / 301 configured to form an anti-resonant cavity for said at least one mode”, it is meant that the thickness of the first sub-layer of each bilayer is chosen so as not to promote resonance in the cavity formed by each first sub-layer. A thickness d30l allowing resonance is for example 2 / 4h301. The thickness d301 of the first sub-layer of said is therefore included in

[0019] 4.30l (2 / H-1J+, (2 / +3)n '4m30! L

[0020] where 2 is a wavelength of said at least one stationary mode and p G N.

[0021] The decoupling between the source and the substrate is achieved by using an anti-resonant reflector. This is an unexpected characteristic for the person skilled in the art. Indeed, the person skilled in the art seeking to use a reflector would rather opt for a resonant reflector, such as a Bragg mirror. The person skilled in the art is familiar, for example, with vertical cavity light sources, using Bragg mirrors to achieve the confinement of a vertical guided mode.

[0022] Unexpectedly, the reflector employs a bilayer whose sublayers have optical indices higher than the effective optical index seen by the stationary mode in the source. This is also an unexpected feature for the person skilled in the art who would think that this tends to promote transmission of the mode to the substrate rather than prevent it.

[0023] Thus, the stationary mode is not transmitted to the substrate, even if the latter has an optical index greater than the effective index of the source. In addition, the reflector does not require, to operate, the use of oxide or nitride. The stationary mode is therefore not absorbed by the reflector for a wavelength greater than or equal to 4 pm.

[0024] The reflector provides a means of integrating a light source capable of operating in a wide spectral range, such as a III-V source, onto a substrate having a high optical index, such as a Si substrate.

[0025] The anti-resonant reflector also differs from a resonant reflector, such as a Bragg mirror, in that only one of the thicknesses of the sub-layers composing said at least one bilayer is constrained. This makes it easier to manufacture said anti-resonant reflector.

[0026] Advantageously, the second sub-layer of said at least one bi-layer can be merged with the substrate. In other words, it is indistinguishable from the substrate. It extends, for example, directly against the substrate and is made of the same material as the substrate.

[0027] Preferably, the thickness d3M of the first sub-layer of said at least one bi-layer is such that

[0028] j _ Lu x-ô [ (2 / 7+))++0, (2 / +1-3)+-(5^ '301 4n30I [ 4kM) ' 4n301 [

[0029] where 2 is a wavelength of said at least one stationary mode, p EN and

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[0041] 5 = X x 10%, preferably 5 = X x 20%, or even <5 = X x 50%. According to a development, the thickness d30l of the first sub-layer of said at least one bi-layer is r 2 ? 1-1 / 2 = “î”— (2A” -1)1 —3-- with N g N , a wavelength of said at least one stationary mode and de{f a thickness of the stationary mode. According to a variant, the thickness d30l of the first sub-layer of said at least one bi-layer is with ô — Ax 50%, preferably 8 — Àx 20%, or even 8 = A x 10%. Advantageously, the anti-resonant reflector comprises a plurality of bilayers, the second sub-layer of a first bilayer of the plurality of bilayers extending against the first sub-layer of a second bilayer of the plurality of bilayers. Advantageously, the source comprises a cavity in which said at least one stationary mode of the electromagnetic field can be established, the cavity comprising a first layer called the “active region” and a second layer called the “lower cladding layer”, the active region extending parallel to the plane and on the lower cladding layer, the lower cladding layer being arranged between the active region and the reflector, the active region also being configured to emit the electromagnetic field. Advantageously, the lower cladding layer is made of III-V material, such as InP, the first sub-layer of said at least one bi-layer being made of Ge and the second sub-layer of said at least one bi-layer being made of Si. Advantageously, the system comprises a bonding layer separating the source and the reflector, the bonding layer having an optical index n$ such as “5 5 W301 and preferably < n3m. Advantageously, the bonding layer comprises a face, parallel to the plane comprising a diffraction grating, the lower cladding layer extending against said face of the bonding layer, against the diffraction grating. The invention also relates to a method of manufacturing a system comprising the following steps: • form, from a substrate extending parallel to a plane and having an optical index n- less than an effective index neff , an antiresonant reflector for at least one stationary mode parallel to the plane of an electromagnetic field, said reflector extending on the substrate, the reflector comprising at least one semiconductor bilayer extending parallel in the plane, said at least one bilayer comprising: a first semiconductor sublayer and a second semiconductor sublayer extending against the first sublayer, the second sublayer being disposed between the first sublayer and the substrate, the first and second sublayers respectively having optical indices n30i and Zî302 such that «301 «302 and «301 > «eff, the first sublayer also having a thickness ^301 configured to form an anti-resonant cavity for said at least one stationary mode; and • forming, on the reflector, a light source configured to present said at least one stationary mode parallel to the plane of the electromagnetic field, the source also being configured to present, for said at least one stationary mode, the effective optical index neff such that “eff < “2.

[0042] The invention and its various applications will be better understood by reading the following description and examining the accompanying figures. BRIEF DESCRIPTION OF THE FIGURES

[0043] The figures are presented for information purposes only and in no way limit the invention. Unless otherwise specified, the same element appearing in different figures has a single reference.

[0044] [Fig.l] shows a first embodiment of a system according to the invention.

[0045] [Fig.2], [Fig.3], [Fig.4] and [Fig.5] present first numerical simulation results produced from a second embodiment of the system according to the invention.

[0046] [Fig.6], [Fig.7], [Fig.8] and [Fig.9] present second numerical simulation results produced from a system according to the prior art.

[0047] [Fig. 10] and [Fig. 11] present third numerical simulation results produced from a third embodiment of the system according to the invention.

[0048] [Fig. 12] presents a fourth numerical simulation result produced from a system comprising a Bragg mirror instead of a reflector according to the invention.

[0049] [Fig. 13] shows an embodiment of a method of manufacturing the system according to the invention. DETAILED DESCRIPTION

[0050] Figure 1 shows a first embodiment of a system 6 according to the invention. It also shows an enlargement of a portion of the system 6 as well as an optical index curve n(v) as a function of a depth X. It also shows an orthonormal reference frame {X; Y; Z}.

[0051] The system 6 comprises a light source 1, a substrate 2 and a reflector 3.

[0052] The substrate 2 extends parallel to a plane P. With respect to the orthonormal reference frame {X; Y; Z], the plane P corresponds to the plane {X; Z}. [Fig.l] only represents a portion of the substrate 2. The latter can be massive, it can have very large dimensions compared to the other elements of the system 6. The substrate 2 is for example made of silicon.

[0053] By light source 1, or simply source 1, is meant a source of electromagnetic radiation. This is for example a laser source or an electroluminescent source. The source 1 is advantageously configured to produce an emission of a light beam in a wavelength range between 0.8 pm and 20 pm. This range includes for example the near infrared and a part of the mid-infrared. The emission can be carried out by a lateral surface of the source 1 or by a surface parallel to the plane P. In this first case, the source 1 is said to be “lateral emission” while in the latter case, the source 1 is said to be “surface emission”.

[0054] In the embodiment of [Fig.l], the source 1 has a ridge shape, called a “ridge” in English, stretching along the Z direction. In other words, it has a high aspect ratio with a length, measured along Z, greater than 200 pm and a width, measured along X, less than 50 pm. The source 1 may have a height, measured along Y, less than 20 pm, or even less than 10 pm.

[0055] The source 1 is configured to emit an electromagnetic field and confine this electromagnetic field in one or more stationary modes. These may be stationary modes, such as those observable in a laser cavity. The source is particular in that each stationary mode is parallel to the plane P. By mode parallel to the plane, it is meant that the field has, exclusively: • a polarization of the electric field perpendicular to the plane P; or • a polarization of the magnetic field perpendicular to the plane P.

[0056] It is understood that the field does not have the two polarizations (of the electric field and of the magnetic field) which are both substantially parallel to the plane P (i.e. parallel to within 10°, or even 5°). In the mode parallel to the plane P, it is understood that the mode is for example transverse to the plane P. In other words, the electromagnetic field comprises for example: • a polarization of the electric field normal to the plane (i.e. parallel to the Y direction) and a polarization of the magnetic field parallel to the plane P; or • a polarization of the electric field Ex parallel to the plane P and a polarization of the magnetic field HY normal to the plane P (as illustrated in [Fig.l]).

[0057] Unless otherwise stated, only one stationary mode of the field in source 1 will be considered, in order to simplify the description of the invention. The teachings apply, however, to each stationary mode when the source 1 has a plurality of stationary modes.

[0058] Different layers 110, 111, 112 making up the source 1 may have different optical indices. An example is shown on the optical index curve n(y). The different indices shown are considered along the dotted line A. However, each stationary mode in the source 1 may have an effective optical index ^eff which may have a different value from the optical indices of the layers of the source 1, in particular due to the geometry of the different layers. This is the reason why the effective optical index neft of the stationary mode is considered. The effective optical index neff can be determined numerically. An estimate of the effective optical index can be determined from the average optical index in the source 1, calculated along the line A.It is also preferable to take into account the elements allowing the confinement of the electric field in source 1, such as the geometry (thickness and / or width) of the other semiconductor layers known as "cladding" or the presence of reflective layers (such as metal electrodes or a diffraction grating).

[0059] Substrate 2 has an optical index w2. When neff > ^2, the stationary mode of source 1 is not likely to couple with substrate 2. On the other hand, when Heff < H2, the stationary mode is likely to couple with substrate 2, increasing optical losses and reducing the efficiency of source 1.

[0060] In order to avoid this drawback, the invention provides that the reflector 3 is arranged between the substrate 2 and the source 1. The reflector 3 is particular in that it is configured to be anti-resonant to at least one stationary mode of the source 1 and preferably all the stationary modes of the source 1. In this way, the transmission of the stationary modes to the substrate 2 is reduced and the efficiency of the source 1 is preserved, even if the substrate 2 shows a strong optical index allowing it to couple with the stationary modes of the source. 1.

[0061] The reflector 3 comprises for example at least one optical cavity configured so as to be anti-resonant to the stationary mode. The optical cavity, extending parallel to the plane P and between the source 1 and the substrate 2, prevents the transmission of the stationary mode to the substrate 2. The source 1 is entirely superimposed, in the direction normal to the plane P, on the reflector 3. Thus, the reflector 3 extends under the source 1, beyond the source 1, so as to effectively block the transfer of the stationary mode to the substrate 2.

[0062] In [Fig.l], the reflector 3 comprises three semiconductor bilayers 31, 32, 33, each extending parallel to the plane P. Each bilayer 31, 32, 33 comprises a first semiconductor sub-layer 301 and a second sub- semiconductor layer 302. [Fig.l] shows an enlargement of the reflector and a portion of the substrate 2. For each bilayer 31, 32, 33, the first sublayer 301 extends against the second sublayer 302. Each bilayer 31, 32, 33 is oriented so that the first sublayer 301 is arranged between the second sublayer 302 and the source 1. A single bilayer 31 may be sufficient to form the non-resonant optical cavity. However, it is advantageous to have a plurality of bilayers 31, 32, 33 (and therefore a plurality of anti-resonant cavities) to improve the decoupling between the source 1 and the substrate 2. In the case of several bilayers 31, 32, 33, said bilayers are preferably in contact two by two, that is to say stacked directly on top of each other, so as to form a vertical stack of bilayers 31, 32, 33.

[0063] In the embodiment of [Fig.l], the second sub-layer 302 of one 33 of the bi-layers merges with the substrate 2. Indeed, it may be advantageous, to simplify manufacturing, for one of the second sub-layers 302 to be a portion of the substrate 2.

[0064] In order to form an optical cavity, each first sub-layer 301 has an optical index n30i strictly greater than the optical index n302 of the second sub-layer 302 or of the second sub-layers with which it is in contact.

[0065] For each bilayer 31, 32, 33, the optical index n30i of the first sub-layer 301 is strictly greater than the optical index ,z3(>2 of the second sub-layer 302. Otherwise, for each bilayer 31, 32, 33, the optical indices verify > ^302-

[0066] The optical index curve n(y) of Figure 1 shows an example of alternation for the optical indices zz30i, 7Z3()2 of the first and second sub-layers 301, 302. This is in this case a simple embodiment of the reflector 3 in which the first sub-layers 301 all have the same optical index n30i. In the same way, the second sub-layers 302 also have the same optical index n302.

[0067] In this case, in this example, the first sub-layers 301 can be made of germanium and the second sub-layers 302 can be made of silicon. This embodiment is all the more advantageous when the substrate 2 is also made of silicon. Thus, one of the second sub-layers 302 can be the same as the substrate 2.

[0068] The first bilayer 31 arranged in the vicinity of the source 1 is in direct interaction with the stationary mode in the source 1. The anti-resonance condition requires that its first sub-layer 301 has an optical index ,z30i strictly greater than the effective optical index neff associated with the stationary mode. Otherwise, for each bilayer 31, 32, 33, ^301 > zLff-

[0069] Thus, the first sub-layer 301, having an index W301 > neff and W301 > ^302 form a plurality of optical cavities.

[0070] The anti-resonance condition can be obtained by controlling the thickness ^301 of each first sub-layer 301, measured perpendicular to the plane P, in other words, the thickness of each anti-resonant cavity in a direction perpendicular to the stationary mode in the source. The thickness d301 can be a function of the wavelength λ of the stationary mode of the source 1. 2 is for example between 0.8 pm and 20 pm. The wavelength 2 corresponds for example to a maximum amplitude of the electromagnetic field in the stationary mode. It can be fixed by the source 1 according to the established stationary mode.

[0071] For example, the thickness d3QX of each first sub-layer 301 may be such that

[0072] , c In- _2_ F 11 1 [ «301G p 4h30) [ u J 4«301 '4n30i [

[0073] where p GN and u is the union operator.

[0074] The thickness d3m of the first sub-layer 301 can take a value different from 2 / 4rt3Ob, this value favoring a resonance of the mode in the first sub-layers. Indeed, a thickness, for example equal to = (2p + 1)2 / 4n30 p would favor the transfer of the stationary mode through the reflector 3 and would therefore reduce the effectiveness of source 1.

[0075] In order to optimize the anti-resonance of the reflector 3, each first sub-layer 301 advantageously has a thickness d30i such that

[0076] 7 In. +<5 [. . 1 (2^+1)2+5, (2^3)2+>[ «301G J'4 — [ U ] 4njoi , [

[0077] where <5 = 10% 2. Thus, the thicknesses d3m of the first sub-layers 301 have values ​​far from (2p + 1)2 / 4n30i in order to limit the resonance of the mode in the first sub-layers 301 and thus decouple the stationary mode from the substrate 2. Preferably, 5 = 20% 2, or even <5 = 50% A.

[0078] The thickness d3Qi can be adjusted in the preceding interval by carrying out an optimization, for example numerical, seeking to minimize the transmission of the stationary mode towards the substrate 2.

[0079]

[0080]

[0081]

[0082] In one embodiment, the thickness d301 may be comprised in , [ pÀ-5 , / ïz+5 ] «301 e [ 27“ J For example, the thickness d3m can be equal to ,7 _ «301 - 2^

[0083] This is a thickness that is the exact opposite of the thickness that can be put in works in a resonant reflector such as a Bragg reflector.

[0084] In a preferred embodiment, the thickness ^301 is:

[0085] -1 / 2 301 4n301 V / „2^

[0086] where / V e N*, <4ff ct nrff are respectively an effective thickness of the stationary mode in the source 1 and the effective optical index seen by the stationary mode in the source 1. The effective thickness d^ of the mode corresponds to a thickness that the stationary mode has in the source 1. It corresponds for example to a thickness dn of a cavity 11 of the source 1 in which the stationary mode is established. The effective index neff can be determined from the optical indices of the elements composing the cavity 11 in which the stationary mode is established. The effective index neff can be equal to the average of the optical indices of the constituents of the cavity 11.

[0087] In the embodiment of Figure 1, the source 1 is a laser source. It comprises a laser cavity 11 configured to emit an electromagnetic field and confine this electromagnetic field in a stationary mode. The cavity 11 extends parallel to the plane P. It has for example a width, measured in the direction X, parallel to the plane (and in the plane of Figure 1) of between 2 and 50 pm. It can also have a height, which will also be called thickness dt b measured perpendicular to the plane P, of between 2 pm and 10 pm. It can also have a length, measured in the direction Z, of between 20 pm and 1000 pm, or even between 100 pm and 5000 pm (this is a “ridge” type laser).

[0088] In the embodiment of [Fig.l], the source 1 comprises a cavity 11 in which the stationary mode(s) can be established. The cavity 11 comprises a plurality of layers extending parallel to the plane P. The cavity 11 comprises, for example, a first layer 110, which is called the “active region” or “amplifying region”. The active region 110 is configured to emit the electromagnetic field. The cavity 11 also comprises a second semiconductor layer 111, called the “lower cladding layer”, extending between the active region 110 and the reflector 3. The active region 110 rests on the inner cladding layer 111. The cavity 11 also comprises a third semiconductor layer 112, called the “upper cladding layers”, resting on the active region 110. The active region 110 separates the cladding layers 111, 112. The three layers thus form a vertical stack.Said stack is delimited by one or more sides 11a, 11b so that the three aforementioned layers 110, 111, 112 are directly above each other.

[0089] The active region 110 may be configured so that the emission of the electromagnetic field is at least spontaneous and preferably spontaneous and stimulated. This latter case allows operation in laser mode of the source 1. The emission may be based on inter-band emission also called “interband cascade emission” in English. It may be preferentially based on inter-sub-band emission also called “quantum cascade emission” or “quantum cascade emission” in English. To allow quantum cascade emission, the active region 110 comprises for example a stack of sub-layers made of III-V material, forming a succession of quantum wells and potential barriers. The stack of sub-layers extends, for example, parallel to the P plane.

[0090] The cladding layers 111, 112 contribute to the confinement of the electromagnetic field in the cavity 11, in particular along the direction Y, normal to the plane. In this way, the electromagnetic field remains localized at the level of the active region 110 and makes it possible, for example, to promote the stimulated emission of the active region 110. For this, the cladding layers 111, 112 are, for example, configured to have optical indices nî n, WH2 strictly lower than an average optical index ni w of the active region 110. By average optical index io of the active region 110, is meant an optical index taking into account the indices of the layers or sub-layers composing the active region 110. In this way, the electromagnetic field emitted by the active region 110 is confined to the vicinity of the active region 110.

[0091] The optical indices / 7i 12 and nno of the cladding layers 111, 112 and of the active region 110 are reported on the index curve n(y) ■

[0092] In order to activate the spontaneous emission of the active region 110, the source 1 comprises means for circulating an electric current in the active region 110. These means comprise for example the cladding layers 111, 112 when the latter are doped. They thus allow the conduction of the electric current through the active region 110.

[0093] The source 1 may also comprise conductive electrodes 12 allowing the circulation of the electric current in the cladding layers 111, 112 and in particular in the active region 110. A first conductive electrode 121, for example made of Au or Ti, extends in contact with the upper cladding layer 112 (if the latter is doped) so as to establish an electrical contact. Similarly, two second conductive electrodes 122, for example made of Au or Ti, extend against a portion of the lower cladding layer 111 so as to establish an electrical contact. The two second electrodes 122 also extend parallel to the sides 11a, 11b of the cavity 11. To prevent the cladding layers 111, 112 and the active region 110 from being short-circuited by the second electrodes 122, the source 1 also comprises two insulating spacers, for example made of SiN, arranged between the cavity 11 and each second electrode 122.The spacers extend for example in contact with each side 11a, 11b of the cavity 11 and separate the cavity 11 from the second electrodes 122.

[0094] When the source 1 is a III-V type source. The cladding layers 111, 112 are for example made of an IILV alloy such as ITnP. The active region 110 comprises for example a multilayer of InGaAs / AlInAs or InAlAs / AlGalnAs. To integrate the IILV source on the Si substrate 2, each first sub-layer 301 of the reflector 3 can be made of Ge and each second sub-layer 302 of the reflector 3 can be made of Si.

[0095] Indeed, it is easy to produce an alternation of Si and Ge sub-layers from a solid Si substrate, for example by growth. In addition, these growths can be produced with standard means implemented in the technology known as “CMOS” for “Complementary Metal-Oxide-Semiconductor” in English.

[0096] In order to facilitate the transfer of the source 1 onto the reflector 3, the system 6 may comprise a bonding layer 5, arranged between the source 1 and the reflector 3. The bonding layer 5 also preferably extends into contact with the reflector 3, the source 1 resting directly on the bonding layer 5. By "bonding layer", we mean a layer whose function is to allow the transfer, also called bonding on the reflector 3. Indeed, it may be difficult to carry out the transfer of a layer of III-V material (such as the lower cladding layer 111) directly onto a Ge layer. The bonding layer 5 is therefore made of a material which facilitates, on the one hand, the transfer of the source 1 thereon and, on the other hand, does not interfere negatively with the reflector 3 or with the stationary mode in the source 1.

[0097] In the illustrated embodiment, the bonding layer 5 extends over a first sub-layer 301 of the reflector 3. In order not to interfere, the bonding layer 5 preferably has an optical index n5 such that «5 < ^301. Thus, the second sub-layer 301 of the reflector 3 which is in contact with the bonding layer 5 can play its role as an optical cavity. Preferably, 4 ;ho2- H can be advantageous than «5 , however it is expected that the bonding layer 5 is not made of a material, such as an oxide or a nitride, which can absorb the stationary mode when it belongs to a wavelength range greater than 4 pm. Thus, a bonding layer 5 having a satisfactory ns index «eff «302 offers a good compromise. For example, the bonding layer 5 can be made with the same material as the second sub-layers 302 of the reflector 3, such as Si.

[0098] The source 1 may be a distributed feedback laser source, called DFB for “distributed feedback” in English. In a DFB source, the stationary mode is established in a cavity, in response to the action of a diffraction grating extending over one face of said cavity. In the case of the source 1, the diffraction grating extends over one of the faces of the cavity 11 and in the Z direction. Thus, the stationary mode is established in the cavity 11, in the Z direction.

[0099] The diffraction grating extends for example over the upper cladding layer 112. The diffraction grating extends for example over a face of one of the cladding layers 111, 112, said face being opposite the active region 110. According to a first example, the diffraction grating extends over a face of the upper cladding layer 112, between said layer 112 and the upper electrode 121 extending over the cavity 11. In a development, the diffraction grating can be etched in the face of said upper cladding layer 112. The diffraction grating is for example formed by trenches, oriented in the X direction, and spaced at a constant pitch in the Z direction.

[0100] According to a variant, the diffraction grating extends over the lower cladding layer 111. It extends for example over a face of the lower cladding layer 111, between said layer 111 and the bonding layer 5. The diffraction grating can be etched in the face of said lower cladding layer 111. Alternatively, the diffraction grating can be formed in the bonding layer 5, for example etched in the latter.

[0101] Figures 2 to 13 present results of numerical simulations carried out by considering several embodiments of the reflector 3. Figures 6 to 9 are also produced from a reflector according to the prior art.

[0102] All simulations were carried out with the same source 1. It comprises a cavity 11 as described with reference to [Fig.l]. The cavity has a width, measured along X, of 10 pm and a height, measured along Y, of 3 pm. The cavity 11 has a length, measured along Z, of 250 pm.

[0103] The lower cladding layer 111 is made of InP and has a thickness of 0.6 pm (unless otherwise indicated, the thicknesses indicated are measured perpendicular to the P plane). The active region 110 has a thickness of 1.72 pm. The upper cladding layer 112 is made of InP and has a thickness of 1.3 pm. An InGaAs layer separates the active region 110 from the lower cladding layer 111. It has a thickness of 0.3 pm. An InP layer separates this InGaAs layer from the active region 110 and has a thickness of 0.2 pm. An InGaAs layer also separates the active region from the upper cladding layer 112. It has a thickness of 0.02 pm. A 0.1 pm InGaAs layer separates the upper cladding layer from the first conductive electrode 121. This electrode 121 is made of Au and has a thickness of 0.5 pm.The second conductive electrodes 122 extending opposite the sides of the cavity 11 are also made of Au and have thicknesses, measured parallel to the plane P, of 0.9 μm. A SiN spacer separates each second electrode 122 from the cavity 11. The spacer has a thickness, also measured parallel to the plane P, of 0.9 μm.

[0104] Substrate 2 is made of Si.

[0105] The stationary mode established in the cavity 11 is monochromatic and has a wavelength of 4.5 pm. The optical index of Si is 3.47. The optical index of Ge is 4. The optical index of InP is 3.11. The average optical index of the active region 110 is 3.35.

[0106] Figures 2 to 5 present first numerical simulation results produced from a first embodiment of the reflector 3. The reflector 3 comprises a stack of three bilayers 31, 32, 33. The stack extends over the substrate 2. The first sub-layers 301 are made of Ge and the second sub-layers 302 are made of Si. The first sub-layers 301 each have a thickness <!--301 ~ 0,496 pm. Les deuxièmes sous-couches 302 présentent chacune une épaisseur, mesurées perpendiculairement au plan, de 0,607 pm.<br-->

[0107] The bilayer extending directly against the substrate 2 comprises a second sub-layer 302 which is indistinguishable from the substrate 2.

[0108] The system also comprises a bonding layer 5, made of Si, having a thickness of 0.255 μm. The bonding layer 5 extends directly against the reflector 3 (and in this case on a Ge sub-layer) and the source 1 (and more particularly the lower cladding layer 111) extends against the bonding layer 5.

[0109] The dimensions of the reflector 3, and in particular the first and second sub-layers 301, 302, were determined by means of an optimization algorithm. The algorithm is moreover based on genetic optimization. The minimized optimization criterion is proportional to the optical losses of the stationary mode in the substrate 2. In this case, it is the imaginary part of the effective optical index of the stationary mode.

[0110] Figures 2 and 3 show, in gray level, an amplitude of the electric field according to, respectively, the X direction (parallel to the P plane) and the Y direction (normal to the P plane). In other words, [Fig.2] shows the amplitude of the electric field for a TEqo mode and [Fig.3] shows the amplitude of the electric field for a TM00 mode.

[0111] Figures 2 and 3 show that the modes considered are confined in the cavity 11. They extend little, if at all, in the reflector 3, and in a negligible manner in the substrate 2.

[0112] The imaginary part Im(neff) of the effective optical index of the stationary mode in the cavity 11 is proportional to the losses suffered by the stationary mode. It is therefore proportional to its coupling level with the substrate 2.

[0113] For figures 2 and 3, Im( / îeff) is respectively equal to 0.6x103 and 2x103.

[0114] Figures 4 and 5 show the propagation of a TM00 wave in the cavity 11 and in particular along the direction Z, along which the cavity 11 extends. The mode considered is not stationary but propagative. However, it makes it possible to visualize the effect of the reflector 3 on the propagation of the field in the system 6. The wave is generated at Z = 0 pm and propagates over 250 pm.

[0115] The amplitude of the EY field is shown in gray level in [Fig.5]. The corresponding power is reported in [Fig.4]. We see in [Fig.5] that the amplitude of the field decreases as the wave propagates along Z. The power loss, illustrated in [Fig.4], is less than 40%.

[0116] For comparison, figures 6 to 9 present numerical simulation results produced from a system 6 comprising, in place of the reflector 3, an oxide layer, as taught by the prior art.

[0117] Figures 6 and 7 also show, in gray level, an amplitude of the electric field of modes TE00 and TM00.

[0118] Unlike Figures 2 and 3, confinement is less effective with the oxide layer. The stationary modes extend significantly beyond the cavity 11 and the oxide layer, into the substrate 2. The result is particularly significant for the TM00 mode of [Fig.7].

[0119] For figures 6 and 7, Im(77eff) is respectively equal to 4x103 and 4x103. The imaginary part is therefore significantly higher. Reflector 3 therefore reduces the optical losses of the stationary mode.

[0120] Figures 8 and 9 show the propagation of a TM00 wave in the cavity 11 decoupled from the substrate 2 by means of the oxide layer.

[0121] The amplitude of the EY field is shown in gray level in [Fig.9]. The corresponding power is reported in [Fig.8]. [Fig.9] shows that the amplitude of the field decreases rapidly as the wave propagates along Z. The power loss, illustrated in [Fig.8], is drastic since it is close to 100% for Z = 250 pm.

[0122] Figures 10 and 11 present numerical simulation results carried out from a second embodiment of the reflector 3. Unlike the embodiment of Figures 2 to 5, the thickness <!--301 de chaque première sous-couche 301 suit :<br-->

[0123] , r „2 . rV2 4"W1 V 7 [ «vn 4«2014ff

[0124] In this case, the thickness of each first sub-layer 301 considered is 2.12 μm. The thickness of each second sub-layer 302 is 2.56 μm.

[0125] Figures 10 and 11 also show, in gray level, an amplitude of the electric field of TE00 and TM00 modes. Im(nett) is respectively equal to 0.1x103 and 0.3x103. The imaginary part is therefore reduced compared to that obtained in figures 6 and 7. Thus, since the reflector 3 is anti-resonant, it significantly reduces the optical losses of the stationary mode.

[0126] [Fig. 12] shows, for comparison, a numerical simulation result obtained from a system 6 for which the reflector 3 is replaced by a Bragg mirror. Unlike the embodiment of Figures 2 to 5, the thicknesses of the Si and Ge layers are configured so that the mirror is resonant, instead of being anti-resonant.

[0127] Figure 12 shows, in gray level, an amplitude of the electric field in a TM00 mode. The imaginary part of the effective optical index Im(neff) is equal to 4x103, which is equivalent to that obtained when the anti-resonant reflector 3 is replaced by an oxide layer. The Bragg mirror is therefore of no interest compared to an oxide layer as implemented according to the teachings of the prior art.

[0128] The implementation of an anti-resonant reflector 3 therefore offers a good means of effectively decoupling a stationary mode established in a source 1 arranged on a substrate with a high optical index.

[0129] [Fig. 13] schematically shows an example of implementation of a method 7 of manufacturing the system 6. The method 7 comprises two major steps which are, the formation 71 of the reflector 3 and the formation 72 of the source 1 on the reflector 3.

[0130] The formation 71 of the reflector 3 is advantageously carried out from the substrate 2. The reflector 3 is moreover preferably formed in full plate, that is to say on the entire surface of the substrate 2. Moreover, at the end of the formation of the reflector 3, the substrate 1 comprises, on one of its faces, at least one bilayer 31, 32, 33, or even a bonding layer 5. The assembly of the substrate 2 and the reflector 3 moreover forms what can be called a functionalized substrate, in the sense that the substrate 2 is prepared to receive a source 1 such as a III-V source.

[0131] The formation 71 of the reflector 3 comprises, for example, the deposition of the sub-layers and successive layers according to the aforementioned teachings. The manufacture of these layers involves methods which are known to those skilled in the art.

[0132] The characteristics of the source 1 and of the stationary mode are preferably known before the formation 71 of the reflector 3 is carried out. In this way, the characteristics of the reflector 3, which are for example the optical indices of the bilayers composing the reflector 3 or the thicknesses of the sub-layers composing each bilayer, can be determined before their manufacture. Alternatively, when the characteristics of the source 1 and / or of the stationary mode are not known in advance, the reflector 3 can be formed by considering a targeted effective optical index and a targeted wavelength. In this way, the functionalized substrate can be manufactured and the match between the reflector 3 and the source 1 then depends on the choice of this source 1.

[0133] The formation 72 of the source 1 may involve a bonding step, such as molecular bonding. For example, the source 1 may be produced separately from the reflector 3, for example from a III-V substrate. It may then be transferred to the functionalized substrate resulting from the formation step 71 of the reflector 3. Alternatively, the source 1 may be produced directly from the free surface of the reflector 3 (or from the bonding layer 5).

[0134] In order to form a laser source 1, the bonding layer 5 of the functionalized substrate may have a diffraction grating. The diffraction grating is for example etched in the bonding layer 5 after the latter has been deposited on the reflector 3. This etching step is advantageously part of the step of forming the reflector 3.

Claims

Claims

1. System (6) comprising: - a substrate (2) extending parallel to a plane (P), said substrate (2) having an optical index n2; - a light source (1) configured to have at least one stationary mode of an electromagnetic field, said mode being parallel to the plane (P), the source (1) also being configured to have, for said at least one stationary mode, an effective optical index such that “eff < n2;the system (6) being characterized in that it also comprises an anti-resonant reflector (3) for said at least one stationary mode, said reflector extending over the substrate (2) and the source (1) extending over the reflector (3), the reflector (3) comprising at least one semiconductor bilayer (31, 32, 33) extending parallel to the plane (P), said at least one bilayer (31, 32, 33) comprising: a first semiconductor sublayer (301) and a second semiconductor sublayer (302) extending against the first sublayer (301), the first sublayer (301) being arranged between the source (1) and the second layer-layer (302), the first and second sublayers (301, 302) having respectively optical indices / z30i and n3O2 such that «301 > «302 and «301 > neff, the first sub-layer (301) also having a thickness configured to form an anti-resonant cavity for said at least one stationary mode.;

2. System (6) according to the preceding claim, characterized in that the thickness ^301 of the first sub-layer (301) of said at least one bilayer (31, 32, 33) is such that jc In. MF 1 ( 1 (2j*-3)+5 [ J.......4;;;;......-......4^;......[ where 2 is a wavelength of said at least one stationary mode, peNetÔ = Xx 10%.

3. System (6) according to one of claims 1 to 2, characterized in that the thickness < / 301 de la première sous-couche (301) de ladite au moins une bicouche (31, 32, 33) est - 0 ]-v2 ^301 = 7^(2^-1) 1-4-+-2-^- 301 \ / «301 4¾¾ _ avec N e N*, 2 une longueur d’onde dudit au moins un mode sta- tionary and a thickness of the stationary mode.

4. System (6) according to one of claims 1 to 2, characterized in that the thickness d30i of the first sub-layer (301) of said at least one bilayer (31, 32, 33) is jc= T ] «301 e [ 2^' 2nS0l j with <5 = zx 50%.

5. System (6) according to one of the preceding claims, characterized in that the anti-resonant reflector (3) comprises a plurality of bilayers (31, 32, 33), the second sub-layer (302) of a first bilayer (31) of the plurality of bilayers (31, 32, 33) extending against the first sub-layer (301) of a second bilayer (32) of the plurality of bilayers (31, 32, 33).

6. System (6) according to one of the preceding claims, characterized in that the source (1) comprises a cavity (11) in which said at least one stationary mode of the electromagnetic field can be established, the cavity (11) comprising a first layer (110) called "active region" and a second layer (111) called "lower cladding layer", the active region (110) extending parallel to the plane (P) and on the lower cladding layer (111), the lower cladding layer (111) being arranged between the active region (110) and the reflector (3), the active region (110) also being configured to emit the electromagnetic field.

7. System (6) according to the preceding claim, characterized in that the lower cladding layer (111) is made of III-V material, such as InP, the first sub-layer (301) of said at least one bi-layer (31, 32, 33) being made of Ge and the second sub-layer (302) of said at least one bi-layer (31, 32, 33) being made of Si.

8. System (6) according to one of the preceding claims, characterized in that it comprises a bonding layer (5) separating the source (1) and the reflector (3), the bonding layer (5) having an optical index n5 such that n$ W301.

9. System (6) according to the preceding claim and one of claims 6 or 7, characterized in that the bonding layer (5) comprises a face, parallel to the plane (P) comprising a diffraction grating (51), the lower cladding layer (111) extending against said face of the bonding layer (5), against the diffraction grating (51).

10. Method (7) of manufacturing a system (6) comprising the following steps: forming (71), from a substrate (2) extending parallel to a plane (P) and having an optical index w2 lower than an effective index , an anti-resonant reflector (3) for at least one stationary mode parallel to the plane (P) of an electromagnetic field, said reflector extending on the substrate (2), the reflector (3) comprising at least one semiconductor bilayer (31, 32, 33) extending parallel to the plane (P), said at least one bilayer (31, 32, 33) comprising: a first semiconductor sublayer (301) and a second semiconductor sublayer (302) extending against the first sublayer (301), the second sublayer (302) being arranged between the first sublayer (301) and the substrate (2), the first and second sublayers (301, 302) having respectively optical indices ^301 and w302 such that ^3oi > %02 and H301 > ^eff, the first sub-layer (301) also having a thickness<!--301 configurée pour former une cavité anti-résonante pour ledit au moins un mode stationnaire ; et<br--> forming (72), on the reflector (3), a light source (1) configured to present said at least one stationary mode parallel to the plane (P) of the electromagnetic field, the source (1) also being configured to present, for said at least one stationary mode, the effective optical index zzeff such that rteff < n2-

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