PRECISE SYNCHRONOUS ANALOGUE COUNTER

The described circuit generates calibrated loads to enhance precision and reduce surface area requirements, addressing the limitations of existing analog counters by achieving 7 to 8 bits of precision with reduced electrical consumption.

FR3144455B1Active Publication Date: 2024-12-20LYNRED
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Patent Information

Application Number
FR2022014377
Authority / Receiving Office
FR · FR
Patent Type
Patents
Current Assignee / Owner
Filing Date
2022-12-23
Publication Date
2024-12-20
Estimated Expiration
2042-12-23

AI Technical Summary

Technical Problem

Existing analog counters face challenges in achieving high precision and reduced electrical consumption while maintaining a limited installation surface, primarily due to the dispersion of transistor threshold voltages in CMOS technology, which limits their ability to produce counters beyond 3 bits.

Method used

A circuit for periodically generating calibrated loads and switching these loads into an integration capacitor, independent of transistor threshold voltage variations, using a single injection control transistor and a switching circuit to improve precision and reduce surface area requirements.

Benefits of technology

The solution enables counters with precision up to 7 or 8 bits, reducing the dependency on technological parameters and minimizing electrical consumption, suitable for integration in limited spaces such as pixel matrices.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention relates to an analog counter (10) for the number of events of an input logic signal (vp) during a counting period comprising a set of detection cycles. This counter includes: - a circuit for periodically generating a calibrated quantity of charges (15) for each detection cycle; - an integrating capacitor (Cint) configured to store said calibrated quantity of charges during each detection cycle in which an event of the input logic signal is detected; - a switching circuit (16) for the calibrated quantity of charges, controlled by the input logic signal, to store said calibrated quantity of charges in the integrating capacitor (Cint) only when an event is detected; - a control signal generation circuit (17); and - a reset circuit (18) for the output voltage (Vint) across the integrating capacitor so as to reset the counting. Figure 2 is shown for abbreviated purposes.
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Description

Title of the invention: ACCURATE SYNCHRONOUS ANALOGUE COUNTER Technical field

[0001] The invention relates to a counter for counting a number of events detected on a logic input signal, i.e. an input signal capable of taking two voltage states. The invention relates to an “analog” counter because the output is provided in the form of an analog signal, so that each voltage level of the analog output signal represents an output number of the counter.

[0002] The invention relates more specifically to a “synchronous” analog counter, that is to say an analog counter whose detection of events on the logic input signal is synchronized with a clock.

[0003] The invention aims more particularly to obtain a high-precision synchronous analog counter, in the sense that it does not depend to the first order on the technological parameters of the technology used, such as the dispersion of the threshold voltages of the transistors, or the value of the capacitances.

[0004] Thus, the invention can find an application in a large number of technical fields for which it is desired to carry out counting with a limited surface area of ​​implantation of the circuit fulfilling this counting function, and for example for single-photon avalanche photodiodes, also called SPAD for "Single-Photon Avalanche Diode" in the English literature, analog-digital converters, or neural networks. State of the Art

[0005] To obtain an implantation of an electronic circuit with a limited surface, it is known to use CMOS technology, for “Complementary metal-oxide-semiconductor” in the English literature.

[0006] In this CMOS technology, a logic counter is generally implemented by logic functions, for example D-type logic flip-flops. For an N-bit logic counter, N flip-flops are typically required to implement a logic counter that can count up to 2N. In addition, a storage of the count is also required, for example by means of a register also integrating N flip-flops. The silicon surface area required to implement a logic counter is therefore proportional to the number of flip-flops required, and this surface area is incompressible.

[0007] In certain specific cases, the silicon surface area is limited, for example if the counter must be implanted in a pixel within a matrix of defined dimension. If this area is not sufficient to implement a logic counter with the expected accuracy, it is possible to seek to implement an analog counter.

[0008] Indeed, logic functions store information on two logic levels, 0 and 1. Another possible solution is to store the information in the form of an analog voltage with M possible levels. Thus, with a capacitor that can store M quantities of distinct charges, and therefore present M distinct voltage levels at its terminals, it is possible to replace N flip-flops conventionally used to obtain a counter with a logic output allowing counting up to 2N. To do this, it is necessary to select the number of charges to be counted M that can be stored in the capacitor so that this number of charges M is less than or equal to the number 2N.

[0009] A second capacitor can also store the result of the counting by transferring the charges from the first to the second capacitor, so as to replace the other N flip-flops in the register. With an analog counter, it is therefore possible to limit the implementation area.

[0010] A logic counter therefore has a counting dynamic limited to 2N. An analog counter has a counting dynamic limited by its precision which allows it to distinguish M different voltage levels at the output. By analogy, it is common to speak of an analog counter of N bits when its precision allows it to fulfill the function of logic counters having a number of bits less than or equal to N.

[0011] An analog counter conventionally integrates an electronic counting circuit and a circuit for generating the counter control signals. The electronic circuit makes it possible to convert the number of events detected during a counting period into an equivalent voltage, with sufficient precision for the M distinct levels.

[0012] The events may correspond to rising or falling edges of an input logic signal. Furthermore, the events may correspond to a variation in the logic state of an input signal. For example, by using a normally high input logic signal, it is possible to detect events for which the input logic signal is placed in the low state. To do this, it is possible to implement detection cycles in the counting period, and to check the logic state of the input logic signal at each detection cycle. Thus, the logic counter is incremented at each detection cycle for which an event of the input logic signal is detected, for example a low state on the input logic signal.

[0013] In the case of an analog counter, the incrementation of the logic counter results in an increase or decrease in the output voltage.

[0014] To do this, analog meters use a charge transfer in a integration capacitance across which the output voltage is measured.

[0015] For example, in the scientific publication “An analog counter architecture for pixel-level ADC”, Peizerat, Arnaud et al. (2009), an electronic circuit illustrated in [Fig.l] of the state of the art proposes to use a CMOS capacitor Cinj to periodically inject charges into an integration capacitor Cint.

[0016] The output voltage Vint is measured across this integration capacitor Cint. The CMOS capacitor Cinj is made by means of a PMOS transistor, the gate voltage of which is set to a voltage Vbias. The source of this transistor Cinj is connected to the drain of a load transistor Mc while the drain of this transistor Cinj is connected to the source of a transfer transistor Mt. The load transistor Mc is also connected by its source to a bias voltage Vdd while the drain of the transfer transistor Mt is connected to the output voltage Vint.

[0017] The gate of the two transistors Mc, Mt is controlled by clock signals ¢, / <e>in phase opposition so as to charge the CMOS capacitor Cinj when the load transistor Mc is on and the transfer transistor Mt is off; and to transfer the charges from the CMOS capacitor Cinj to the integration capacitor Cint when the load transistor Mc is off and the transfer transistor Mt is on.

[0018] This electronic circuit of [Fig.l] thus carries out a transfer of charges from the CMOS capacitor Cinj to the integration capacitor Cint at each cycle of the clock signals ¢, / <£>. More precisely, at each cycle, the transferred charges pass through a transfer transistor Mt and they correspond, to the first order, to Vdd-Vbias-Vt, Vt corresponding to the threshold voltage of the PMOS transistor producing the CMOS capacitor Cint.

[0019] However, this PMOS transistor inevitably integrates a dispersion of its threshold voltage Vt. Other charge transfer schemes exist in the state of the art but they are also affected by the dispersions of Vt of the charge or transfer transistors.

[0020] This dispersion of the threshold voltage Vt is mainly inherent to the manufacturing process. It can be evaluated by Monte-Carlo type simulations. More precisely, this dispersion is a function of the manufacturing plant, the manufacturing batch, the manufactured wafer, the chip on the wafer, etc. There is also a local dispersion whose value is inversely proportional to the square root of the surface area of ​​the transistor. This dispersion can be several millivolts, or several tens of millivolts and causes a variation in the behavior of a counter compared to another neighboring counter, for example when several counters are associated with several pixels.

[0021] Due to the dispersion of the threshold voltage Vt, each analog counter of a matrix has its own transfer curve describing the evolution of the output voltage as a function of each detected event.

[0022] If this transfer curve is different from one meter to another, it is necessary to reduce the counting dynamics to tolerate the margin of error between the different curves, or measure each of the curves to correct their errors to increase the precision.

[0023] In practice, it is very difficult to make a personalized correction for each pixel, and the reduction of the counting dynamics is conventionally used, which is why it is difficult to realize an analog counter of more than 3 bits.

[0024] The dynamics of an analog counter results from the precision of each voltage increment to move from one level to the next level during counting, but also from the precision of the increment of a counter compared to the increment of each of the other counters present in each pixel of a matrix.

[0025] The state of the art of existing analog counters allows the creation of 3-bit counters. Some claim 4 counting bits with particularly complex architectures.

[0026] For example, to produce a 4-bit counter, therefore 16 distinct levels (15 increments) on a voltage dynamic of 3V, voltage increments of 0.2V are required. To identify the output levels, the output voltage is recognized as representative of the level closest to it, the threshold separating two successive levels is therefore located in the middle of the two levels, i.e. 0.1V from the ideal level. The statistical deviation of the output from the ideal level follows a normal law. To avoid level detection errors on all the counters of a matrix having, for example, a million pixels, the threshold separating the levels must be located at least five times the standard deviation from the ideal level. The standard deviation of the statistical deviation must therefore be of the order of 20 mV. The dominant source of the statistical error at the output is the statistical error of the increment.Indeed, this error of the increment is repeated during the counting, and accumulates at the output, the statistical error at the output is then equal to M times the statistical error of the increment, M being the dynamic range of the counter. In the case of a 4-bit counter, the standard deviation of the error on the increment must be 15 times smaller than the standard deviation of the error at the output, i.e. a standard deviation of the error on the increment of 1.3 mV. This example illustrates the difficulty of producing a 4-bit analog counter with the dispersion of the threshold voltages Vt of the transistors produced in CMOS technology: from a few mV to a few tens of mV.

[0027] It should be noted that to increase the dynamics of an analog counter by one bit, it is necessary to improve the precision of the increment by a factor of 4.

[0028] This problem of the dispersion of the threshold voltage Vt of a transistor linked to the transfer of charges and requiring a reduction in precision is common to a large number of known analog output logic counters, in particular those described in documents US 2021 / 0226637, WO 2021 / 150296, US 10,931,296 and US 10,594,299. This latter document US 10,594,299 clearly describes this problem of limitation of the precision, and it proposes to increase this precision by implementing several logic counters with analog output in cascade. However, this solution requires managing the carryovers between the cascaded counters and the reset signals during the counting. In addition, the multiplicity of logic counters with analog output increases the implementation surface.

[0029] Some analog output logic counters also integrate amplifiers, as described in one embodiment of the scientific publication “A 64 x 64 SPAD-Based Indirect Time-of-Flight Image Sensor With 2-Tap Analog Puise Counters” Byungchoul Park et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS (2021).

[0030] The use of this type of component poses consumption problems. Indeed, the consumption of an amplifier is of the order of 600nA while a circuit which uses only discrete components, such as transistors, consumes ten times less current.

[0031] The technical problem of the invention is therefore to obtain an analog meter with greater precision than known meters of this type, allowing installation on a limited surface area, and having limited electrical consumption. Statement of the invention

[0032] To address this technical problem, the invention proposes implementing a circuit for the periodic generation of calibrated charges and a circuit for switching the charges controlled by a logic input signal.

[0033] These circuits make it possible to periodically generate precise charges during a detection cycle, and to direct the charges into an integration capacitor, across which the output voltage, only when an event is detected in the detection cycle on the input logic signal.

[0034] By calibrated charge is meant a charge which does not depend, to the first order, on the technological parameters of the CMOS technology. It will therefore be preferentially chosen to use the same type of capacitance for the injection capacitance and the integration capacitance so that the dispersions of this type of capacitance compensate each other, and so that the voltage increment on the integration capacitance is not affected by the dispersions of the capacitances between the different batches, wafers, or chips manufactured.

[0035] More specifically, the invention proposes a circuit for the periodic generation of calibrated charges implementing a single injection control transistor connected in series with an injection capacitor, so as to use this injection control transistor to charge and discharge the injection capacitor. To do this, an initialization phase, a precharge phase and a charge phase are implemented in each detection cycle. During the precharge and charge phases, the gate voltage of the injection control transistor is adjusted differently so as to apply two successive distinct voltages to the injection capacitor and, thus, cancel the threshold voltage of the injection control transistor by the difference between the two voltages successively applied to the injection capacitor.

[0036] It follows that precisely calibrated loads are generated periodically identically and transmitted to the switching circuit whose role is to select those which will be taken into account for the counting of each event. It thus becomes possible to improve the precision of the counter of the invention because the increment of the output signal between two consecutive counting levels can be much lower than that of the state of the art.

[0037] For example, the invention makes it possible to implement an increment of the output signal of the order of 0.015 to 0.025 Volts between two voltage levels, making it possible to obtain a count with a precision of up to 7 or 8 bits.

[0038] To this end, the invention relates to an analog counter of the number of events of at least one input logic signal during a counting period, said counting period comprising a set of detection cycles in which an event of the input logic signal can be detected.

[0039] The invention is characterized in that the analog meter comprises: - a circuit for periodic generation of a calibrated quantity of charges at each detection cycle; - an integration capacitor configured to store said calibrated quantity of charges at each detection cycle of the counting period for which an event of the input logic signal is detected so that an output voltage, at the terminals of the integration capacitor, is representative of the number of events of the input logic signal detected during the counting period; - a switching circuit for the calibrated quantity of charges controlled by the input logic signal to store said calibrated quantity of charges in the integration capacitor only when an event is detected on the input logic signal; - a circuit for generating analog meter control signals; and - a circuit for resetting the output voltage across the integration capacitor so as to reset the count.

[0040] The circuit for periodic generation of calibrated charges comprises: - an injection capacitor configured to store the calibrated quantity of charges at each detection cycle and connected to one of its terminals at a first voltage of polarization; - an injection control transistor whose source is connected to the other terminal of the injection capacitor, whose gate is connected to a control voltage, and whose drain is connected to an injection node; - a load transistor whose source is connected to a second bias voltage and whose drain is connected to the injection node; and - a transfer transistor whose source is connected to the injection node and whose drain is connected to a switching node; the gate of the two charge and transfer transistors being controlled by clock signals in phase opposition so as to charge said injection capacitor then to transfer the charges accumulated in said injection capacitor to the switching circuit.

[0041] The control signal generation circuit is configured to control the control voltage and the clock signals so as to successively generate the following phases at each detection cycle: - an initialization phase during which the injection control transistor and the load transistor are on while the transfer transistor is off; - a precharge phase during which the injection control transistor and the transfer transistor are on while the charging transistor is off, the control voltage being set to a first value; and - a charging phase during which the injection control transistor and the transfer transistor are on while the charging transistor is off, the control voltage being set to a second value.

[0042] The invention thus proposes to periodically generate a calibrated quantity of charges so that these charges can be transferred into the integration capacitor as a function of the switching controlled by said at least one input logic signal.

[0043] Within the meaning of the invention, the “calibrated” charges correspond to quantities of charges which are more precise than those of the state of the art. Indeed, by using the same injection control transistor to generate the two precharge and charge phases with distinct control voltages, the voltage applied to the terminals of the integration capacitor at the end of these two phases is independent of the threshold voltage of this injection control transistor.

[0044] Since the amount of charge in the integration capacitor depends on the capacitance value and the voltage difference across the integration capacitor, it follows that the amount of charge that is transferred from the injection capacitor to the integration capacitor is more precise because it is independent, to the first order, of variations in this threshold voltage.

[0045] Numerically, with a first control voltage value vtxl, a second control voltage value vtx2 and a threshold voltage of the injection control transistor vtMct, the voltage applied to one terminal of the integration capacitor corresponds to the difference vtxl-vtMct in the precharge phase and to the difference vtx2-vtMct in the charge phase. During the transition between these two phases, the amount of charge in the integration capacitor is therefore (vtx2-vtxl).Cinj, with Cinj the value of the injection capacitor. Thus, the amount of charge transferred from the injection capacitor to the integration capacitor during the transition between these two phases is independent of the threshold voltage of the injection control transistor vtMct.

[0046] This operating principle is not called into question if the threshold voltage of the injection control transistor vtMct changes slightly, by bulk effect, with the biasing of the source of the injection control transistor, because the bulk effect does not depend on the dispersion of the threshold voltage of the injection control transistor vtMct.

[0047] This advantage is very important since it makes it possible to implement output signal thresholds at voltages of the order of 0.015 to 0.025 Volts between two voltage levels, making it possible to obtain a count whose precision can reach 7 to 8 bits.

[0048] Within the meaning of the invention, the “charging” or “precharging” phases correspond to phases at the end of which charges in precise quantities are generated by the circuit for periodic generation of calibrated charges and stored in the injection capacity. These calibrated charges can be obtained by steps of charging or discharging the injection capacity without changing the invention.

[0049] These charges are generated “periodically” because, at each detection cycle implementing the initialization phase, the precharge phase and the charge phase, a calibrated quantity of charges is generated by the circuit for periodic generation of calibrated charges and stored in the injection capacitor. During each of these detection cycles repeated in a loop throughout the counting period, this calibrated quantity of charges may or may not be transferred into the integration capacitor. This transfer is controlled by the detection of an event on at least one input logic signal.

[0050] The events may correspond to rising or falling edges of an input logic signal. Preferably, the events correspond to a variation in the logic state of an input signal. For example, by using an input logic signal whose stable state is the high state, it is possible to detect events for which the input logic signal is placed in the low state. To do this, it is possible to check the logic state of the input logic signal at each detection cycle. Thus, the analog counter is incremented or decremented at each detection cycle for which an event of the input logic signal is detected, for example a low state on the input logic signal.

[0051] In the context of the invention, the incrementation of the analog counter results in an increase or a decrease in the output voltage at the terminals of the integration capacitor obtained by a transfer of calibrated charges from the injection capacitor.

[0052] To do this, the switching circuit can take several distinct forms with one or more transistors operating in switching mode to transfer the precisely calibrated charges which are validated by an event on the logic input, to the integration capacitor, and to evacuate all the other charges to a bias voltage.

[0053] Preferably, the switching circuit comprises two lines: - a charge evacuation line comprising a evacuation transistor whose source is connected to said switching node and whose drain is connected to a third bias voltage; and - a charge transfer line comprising a counting transistor whose source is connected to said switching node and whose drain is connected to the integration capacitor; the gate of the transistors of the two lines being controlled by input logic signals which define whether the charges stored in the injection capacitor are evacuated or transferred into the integration capacitor.

[0054] Preferably, the on-state of the two transistors will not be in ohmic state, but in saturated state to ensure a cascode function during charge transfer, and thus improve linearity.

[0055] With this switching circuit, the discharge transistor of the charge discharge line can be preferentially controlled by a variable input logic signal while the counting transistor of the charge transfer line is controlled by a fixed signal, the parasitic charge couplings between the gate of the counting transistor and the integration capacitor are then eliminated.

[0056] Thus, it is possible to ensure that an event of the variable input logic signal in the charging phase causes a transfer of the calibrated charges into the integration capacitor. Alternatively, the logic signals of the gates of the transistors of the two lines can be variable and correspond to two input logic signals in order to detect events on these two input logic signals.

[0057] Typically, the input logic signal applied to the gate of the counting transistor may be fixed, for example at a voltage of 2.4 Volts. The voltage applied to the gate of the drain transistor may then be fixed at 2.7 Volts and change to 2.1 Volts during an event. Thus, the voltage applied to the gate of the drain transistor is normally greater than the voltage applied to the gate of the counting transistor, and the calibrated charges are normally drained to the third bias voltage. During an event, the voltage applied to the gate of the evacuation transistor is lower than the voltage applied to the gate of the counting transistor and the calibrated charges are transferred into the integration capacitor.

[0058] To detect events that may appear on the input logic signal applied to the gate of the counting transistor, the latter can also vary between the voltage of 2.4 Volts and the voltage of 3 Volts.

[0059] Thus, an event of the input logic signal detected by the gate of the counting transistor causes an increase in the voltage applied to the gate of the counting transistor and, the voltage applied to the gate of the evacuation transistor being lower than the voltage applied to the gate of the counting transistor, the calibrated charges are transferred into the integration capacitor.

[0060] This embodiment is particularly effective for easily controlling the counting or not of events occurring on a variable input logic signal, or an equivalent complemented input logic signal.

[0061] Furthermore, with this switching circuit and using the previous digital example, the thresholds of the output signal can correspond to Vstep=(vtx2-vtxl).Cinj / Cint, with Cinj the value of the injection capacitance. More precisely, the value of the threshold voltage of the injection control transistor vtMct can evolve by bulk effect when the source-bulk voltage of the injection control transistor Met changes. The precise load is then slightly lower than the theoretical value but this does not affect the accuracy of the reproducibility of the value because the contribution is of the second order. Typically, Vstep can be 23 mVolts over an amplitude range of 3 Volts, extending from 1.4 to 4.4 Volts. It is thus possible to code 130 combinations on an analog output voltage, making it possible to describe a 7-bit signal of 128 combinations.

[0062] This switching circuit transfers calibrated charges to the integration capacitor, but it also transfers a small parasitic charge which is dependent on the threshold voltage difference between the drain transistor and the counting transistor.

[0063] Indeed, the transistors exchanging the role of cascode, their common source connected to the switching node is biased either by the evacuation transistor, or by the counting transistor, to a value of their gate voltage minus the threshold voltage of each transistor. This difference in threshold voltage between the evacuation transistor and the counting transistor is applied to the switching node during switching, and therefore on the parasitic capacitance seen by the switching node. Thus, this parasitic capacitance seen by the switching node corresponds to a parasitic charge proportional to the difference in threshold voltage between the evacuation transistor and the counting transistor which is transferred to the integration capacitor.

[0064] This parasitic charge dependent on the threshold voltages between the evacuation transistor and the counting transistor is a second-order error because the parasitic capacitance of the switching node is much lower than the injection capacitance, but this error becomes dominant in the context of the invention which has eliminated the first-order errors.

[0065] To improve the accuracy of the analog counter and reduce the possible amplitude of the thresholds of the output signal, it may be sought to cancel the difference in threshold voltage between the evacuation transistor and the counting transistor of the two lines of the switching circuit. To do this, it is possible to use a reset phase of the counter to store in an offset capacitor the difference in threshold voltage between the two transistors of the two lines of the switching circuit. It is then possible to subtract this offset value stored in the offset capacitor to obtain the variable input logic signal from a controlled input logic signal.Thus, the charges transferred into the integration capacitor can be independent of the threshold voltage difference between the sink transistor and the counting transistor of the two lines of the switching circuit and the voltage thresholds of the output signal can be reduced, so as to increase the accuracy of the analog counter.

[0066] In this embodiment, the charge evacuation line also comprises: - an offset capacitor connected between a controlled input logic signal and the gate of the evacuation transistor so that the variable input logic signal is obtained from the controlled input logic signal by applying an offset generated by the voltage of the offset capacitor; - a first offset transistor connected between the drain of the evacuation transistor and the third bias voltage, the source of the first offset transistor being connected to the third bias voltage, its drain being connected to the drain of the evacuation transistor and its gate being controlled by a first offset signal generated by the control signal generation circuit; and - a second offset transistor connected between the drain and the gate of the drain transistor, the drain of the second offset transistor being connected to the drain of the drain transistor, its source being connected to the gate of the drain transistor and its gate being controlled by a second offset signal generated by the control signal generation circuit.

[0067] The control signal generation circuit is then configured to control the first offset signal and the second offset signal so as to successively generate the following episodes in a reset period: - an episode of charging the offset capacitor in which the first offset transistor is on and the second offset transistor is on; - a discharge episode of the offset capacitor in which the first offset transistor is blocked and the second offset transistor is conducting, this discharge episode being maintained for a certain number of calibration cycles during which the initialization, precharge and charge phases are implemented; and - an offset capacitance sampling episode in which the first offset transistor is off and the second offset transistor is off; - the controlled logic input signal being fixed at a reset voltage value during the charge, discharge and sampling episodes.

[0068] The control signal generation circuit is also configured to control the first offset signal and the second offset signal such that the first offset transistor is on and the second offset transistor is off in the counting period.

[0069] To implement this embodiment, the control signal must therefore correspond to a “controlled” input logic signal, i.e. a logic signal generated by the control signal generation circuit.

[0070] In the reset period, to obtain a loading of the offset capacitor with a voltage representing the threshold voltage difference between the evacuation transistor and the counting transistor of the two lines of the switching circuit, it is necessary to fix the controlled input logic signal at a predefined voltage.

[0071] This predefined voltage is applied to a first terminal of the offset capacitor while the second terminal of the offset capacitor is connected to the third bias voltage, through the second offset transistor which is turned on. The first offset transistor being initially on in the charging episode, the offset capacitor is then charged to its maximum charge. The first offset transistor is then blocked, the drain and the gate of the drain transistor become a floating node in the discharging episode, biased by the offset capacitor.

[0072] To calibrate the offset capacitance to the desired value, calibrated charges must be generated by the circuit for periodic generation of calibrated charges by implementing the initialization, precharge and charge phases otherwise used in the discharge episode. Thus, by using several consecutive calibration cycles in the discharge episode, for example 5 cycles, it is possible to gradually discharge the offset capacitance to a final desired value which is representative of the threshold voltage difference between the drain transistor and the counting transistor of the two lines of the switching circuit.

[0073] This value is reached asymptotically because, initially, the calibrated charges pass through the evacuation transistor, and discharge the offset capacitor, this discharge lowers the gate voltage of the evacuation transistor to its conduction threshold, that is to say the moment when the calibrated charges pass entirely through the second transistor. This conduction threshold on the gate of the drain transistor is representative of the threshold voltage difference between the drain transistor and the counting transistor.

[0074] To complete this reset period, the second offset transistor is blocked to sample the desired value on the offset capacitor. Thus, in the sampling episode, the first offset transistor is turned on to return to the initial conditions. The gate of the evacuation transistor is then controlled with an offset shift which aligns the conduction threshold to the same value for all the pixels, the parasitic charge of the switching node is then identical for all the pixels, there is no longer any dependence on the difference in threshold voltages between the evacuation transistor and the counting transistor.

[0075] Preferably, the analog counter of the invention is integrated into a pixel of a matrix in which each pixel integrates an analog counter. To do this, each pixel needs control signals to function correctly. These signals can be bias signals, conventional logic signals taking the level of the power supplies, logic signals with specific voltage levels for the "0" and the "1", and logic or analog signals which are dependent on the logic input which validates the counting... There can also be more complex signals such as the controlled input signal which must take three distinct voltage levels: one voltage level in the reset period and two voltage levels to validate or not the counting in the counting period.

[0076] Where possible, all these signals are generated outside the pixel matrix, but the logic input signal is specific to each pixel, and is therefore generated in the pixel, for example, the output of a comparator, or the two complemented outputs of a comparator. There is therefore a need to have a circuit in the pixel to shape the control signals from the input signal internal to the pixel. This circuit must be as small as possible because it is implemented in the pixel.

[0077] Thus, to optimize the surface area available for the analog counter, it is preferable to use identical control signals for several analog counters so that these control signals can be shared and generated outside the surface of each pixel. To do this, it is possible to improve the charge evacuation line to fix the voltage on the input logic signal in the reset period by external signals, generated centrally.

[0078] In this embodiment, the charge evacuation line also comprises a circuit for generating the variable input logic signal; this circuit comprising: - a first generation transistor of which a first terminal, source or drain, is connected to a first generation signal, a second terminal, source or drain, is connected to the controlled input logic signal, and the gate is connected to a signal uncontrolled input logic; and - a second generation transistor of which a first terminal, source or drain, is connected to a second generation signal, a second terminal, source or drain, is connected to the controlled input logic signal, and the gate is connected to a signal complementary to the uncontrolled input logic signal.

[0079] The control signal generation circuit is configured to control the first generation signal and the second generation signal such that: - the first generation signal is low in the charging phase and high in the initialization and precharge phases of the counting period; and - the second generation signal is high in the initialization, precharge and charge phases of the counting period; the first generation signal and the second generation signal having a reset voltage during a reset period so as to clamp the controlled input logic signal to the reset voltage during a reset period.

[0080] This embodiment aims to introduce a multiplexer with two transistors and two input signals, one for the “counting” function and one for the “non-counting” function. One of these two signals is sent to the counter depending on the positioning of the input signal which must remain stable during the counting, and can change between two counts.

[0081] During the reset period, one of the two generation transistors is necessarily on, regardless of the level of the uncontrolled input signal, since the first generation transistor is controlled by the uncontrolled input logic signal while the second generation transistor is controlled by the complementary signal. It follows that the desired voltage, i.e. the reset voltage, is applied to the input logic signal during this reset period.

[0082] This embodiment may be implemented with or without the offset capability.

[0083] Thus, besides the input logic signal, all other signals are generated at outside the matrix, in particular the specific voltage applied during the reset period. This nevertheless requires that all the counters in the matrix reset at the same time.

[0084] Furthermore, it is possible to use the transfer transistor to provide a cascode function with the injection control transistor. This cascode function makes it possible to separate the injection node and the switching node to ensure linearity of the charge transfer between the injection capacitor and the integration capacitor. To do this, the control signal generation circuit is configured to transmit a clock signal to the transfer transistor whose amplitude is limited. so that the transfer transistor is not in ohmic regime in the precharge and charge phases.

[0085] Furthermore, the reset circuit can be implemented by a transistor whose drain is connected to the integration capacitor, the source is connected to an initialization voltage and the gate is controlled by a reset signal generated by the counter control signal generation circuit. This embodiment makes it possible to simply implement a reset of the voltage across the integration capacitor. For the purposes of the invention, a reset refers to a positioning of the analog output voltage at a value corresponding to the value 0 of the event counter.

[0086] Thus, the reset may consist of imposing a voltage level greater than 0 volts across the terminals of the integration capacitor, for example 3 volts. Preferably, the injection capacitor and / or the integration capacitor are produced by MOS capacitors. A MOS capacitor is conventionally produced by interposing a thin layer of insulation of a few tens of nanometers between a semiconductor, for example silicon, and a metal electrode, for example polycrystalline silicon. This embodiment makes it possible to limit the silicon surface area required to form the capacitors.

[0087] According to a first implementation variant, the injection control transistor, the two transfer transistors, the evacuation transistor and the counting transistor are made up of NMOS transistors, the first bias voltage and the second bias voltage corresponding to low voltage levels while the third bias voltage corresponding to a high voltage level. This first implementation variant proposes successive decreases of an output voltage, initially set to a high state.

[0088] According to a second implementation variant, the injection control transistor, the two transfer transistors, the evacuation transistor and the counting transistor are made up of PMOS transistors, the first bias voltage and the second bias voltage corresponding to high voltage levels while the third bias voltage corresponding to a low voltage level. This second implementation variant proposes successive increases of an output voltage, initially set to a low state.

[0089] Summary description of the figures

[0090] The manner of carrying out the invention as well as the advantages which result therefrom will emerge clearly from the following embodiments, given for informational but non-limiting purposes, supported by figures 1 to 8 in which:

[0091] [Fig-1] is a schematic representation of a state-of-the-art analog meter;

[0092] [Fig.2] is a schematic representation of an analog meter according to a first embodiment of the invention;

[0093] [Fig.3] is a schematic representation of an analog meter according to a second embodiment of the invention;

[0094] [Fig.4] is a schematic representation of an analog meter according to a third embodiment of the invention;

[0095] [Fig.5] is a schematic representation of the control signals and voltages of the analog meter of [Fig.2] according to a first time scale;

[0096] [Fig.6] is a schematic representation of a first part of the control signals and voltages of the analog meter of [Fig.4];

[0097] [Fig.7] is a schematic representation of a second part of the signals of control and voltages of the analog meter of [Fig.4];

[0098] [Fig.8] is a schematic representation of a first part of the control signals and voltages of the analog meter of [Fig.4] in a charging episode of a reset period;

[0099] [Fig.9] is a schematic representation of a second part of the signals of control and voltages of the analog meter of [Fig.4] in a load episode of the reset period;

[0100] [Fig. 10] is a schematic representation of a first portion of the control signals and voltages of the analog counter of [Fig.4] in a sampling episode of the reset period; and

[0101] [Fig. 11] is a schematic representation of a second part of the control signals and voltages of the analog counter of [Fig.4] in a sampling episode of the reset period. Detailed description of the invention

[0102] [Fig.2] illustrates an analog counter 10 according to one embodiment of the invention. Within this analog counter 10, an electronic circuit makes it possible to count the number of events of an input logic signal vp or vn occurring during a counting period Pc. To do this, the electronic circuit is divided into several parts: - a circuit for the periodic generation of a calibrated quantity of charge 15, - a switching circuit 16, - a control signal generation circuit 17 and - a reset circuit 18.

[0103] These different circuits 15 to 18 aim to control the storage of a predetermined quantity of charges in each detection cycle Cd of the counting period Pc when an event is detected on the input logic signal vp or vn. These calibrated quantities of charges are stored in an integration capacitor Cint mounted between an output voltage Vint and ground.

[0104] The reset circuit 18 makes it possible to reset the output voltage Vint across the integration capacitor Cint by means of a reset signal. To do this, the reset circuit 18 can be implemented by means of a PMOS type transistor Mr whose drain is connected to the voltage Vint and whose source is connected to an initialization voltage Vinit corresponding to the voltage to be applied to the output voltage Vint to reset the analog counter 10.

[0105] The gate of the transistor Mr is controlled by a reset signal generated by the control signal generation circuit 17. For example, the voltage Vinit may correspond to a voltage of 3 Volts making it possible to reset the voltage Vint across the integration capacitor Cint to 3 Volts at the start of counting. This reset circuit 18 may take other forms without changing the invention.

[0106] To generate calibrated charges during each detection cycle Cd, the invention proposes implementing a circuit 15 for periodically generating a calibrated quantity of charges comprising an injection capacitor Cinj, an injection control transistor Met, a charge transistor Mc and a transfer transistor Mt. The injection capacitor Cinj, as well as the integration capacitor Cint, can be implemented by MOS capacitors. Unlike the integration capacitor Cint which aims to store several distinct quantities of charges in order to count the events occurring on the input logic signal vp or vn, the injection capacitor Cinj can have a much lower capacitance value than that of the integration capacitor Cint. The order of magnitude of the injection capacitor Cinj is ten femtofarads, for example 10 fF, while the order of magnitude of the integration capacitor Cint is one hundred femtofarads, for example 500 fF.

[0107] This injection capacitor Cinj is connected to one of its terminals to a first bias voltage Vpoll, while the other terminal of the injection capacitor Cinj is connected to the injection control transistor Met. In the example of [Fig.2], the injection control transistor Met consists of an NMOS transistor, the source of which is connected to the injection capacitor Cinj while the drain is connected to an injection node NI. Furthermore, the gate of the injection control transistor Met is connected to a control voltage vt generated by the control signal generation circuit 17.

[0108] The injection node NI is also connected to the load transistor Mc and the transfer transistor Mt. More precisely, the load transistor Mc is connected between the injection node NI and a second bias voltage Vpol2.

[0109] In the example of [Fig.2], the load transistor Mc consists of an NMOS transistor whose source is connected to the second bias voltage Vpol2, and whose the drain is connected to the injection node NI. The transfer transistor Mt is connected between the injection node NI and a switching node N2. In the example of [Fig.2], the transfer transistor Mt consists of an NMOS transistor, whose source is connected to the injection node NI and whose drain is connected to the switching node N2.

[0110] The two charge and transfer transistors Mc and Mt are controlled by clock signals <e>and AD in phase opposition. These clock signals <e>and AD are also generated by the control signal generation circuit 17.

[0111] Thus, in the example of [Fig.2], the control signal generation circuit 17 generates the control signals ¢, AD, vt and reset which make it possible to configure the analog counter 10.

[0112] To detect events on an input logic signal vp or vn, this input logic signal is taken into consideration in the switching circuit 16. This switching circuit 16 makes it possible to transfer the calibrated charges from the injection capacitor Cinj into the integration capacitor Cint when the counting is validated by the input logic signal vp or vn or to evacuate its charges to a third bias voltage Vpol3. To do this, the switching circuit 16 preferably comprises two lines L1 and L2. A charge evacuation line L1 is formed by an evacuation transistor Mdl. In the example of [Fig.2], the evacuation transistor Mdl is made up of an NMOS transistor whose source is connected to the switching node N2 and whose drain is connected to the third bias voltage Vpol3.

[0113] The second line corresponds to a charge transfer line L2 which comprises a counting transistor Md2. In the example of [Fig.2], the counting transistor Md2 consists of an NMOS transistor whose source is connected to the switching node N2 and whose drain is connected to the output voltage Vint, i.e. to the integration capacitor Cint.

[0114] The gate of transistors Mdl and Md2 is controlled by two input logic signals vp and vn which determine whether the charges stored in the injection capacitor Cinj are evacuated or transferred to the integration capacitor Cint. More precisely, these two input logic signals vp and vn operate as a differential pair, and it is the difference between these two input logic signals vp and vn which determine whether the charges stored in the injection capacitor Cinj are evacuated or transferred to the integration capacitor Cint. Thus, by setting the input logic signal vn to a fixed value, it is possible to define whether the charges stored in the injection capacitor Cinj are evacuated or transferred, simply by changing the state of the input logic signal vp.

[0115] The operation of this circuit of [Fig.2] is more particularly described in reference with [Fig.5] which illustrates an example of implementation of two detection cycles Cd during a counting period Pc. Each detection cycle Cd has three phases.

[0116] An initialization phase El allows the injection capacitor Cinj to be charged. During this phase, the injection control transistor Met and the load transistor Mc are on while the transfer transistor Mt is off. To control this initialization phase El, the clock signal <e>is set to the high state while the clock signal AD is set to the low state. The duration of this initialization phase El is selected so that the injection capacitor Cinj can be fully charged.

[0117] After this initialization phase El, a precharge phase E2 consists of placing the injection control transistor Met and the transfer transistor Mt on, while the charge transistor Mc is off. Thus, this precharge phase E2 is obtained by passing the signal <e>in the low state and the clock signal AD in the high state. Furthermore, in this precharge phase E2, the control voltage vt is set to a first value vtxl. Following this precharge phase E2, a charge phase E3 consists of modifying the control voltage vt to a second value vtx2 in order to apply a voltage discontinuity across the injection capacitor Cinj.

[0118] This voltage discontinuity between the precharge phase E2 and the charge phase E3 causes a charge transfer controlled by the voltage variation applied to the control signal vt.

[0119] More precisely, in the precharge phase E2, the capacitor Cinj discharges progressively until the voltage Vinj across this capacitor is biased to vtxl-vtMct, with vtMct corresponding to the threshold voltage of the injection control transistor Met. By applying a second voltage level vtx2 > vtxl during the charge phase E3, the capacitor Cinj discharges and the signal Vinj changes from vtxl-vtMct to vtx2-vtMct, the quantity of charges transferred is then exactly vtx2-vtxl divided by the capacitance value of the capacitor Cinj.

[0120] The threshold voltage of the injection control transistor vtMct changes slightly, by bulk effect, with the biasing of the source of the injection control transistor Vinj, this effect very slightly reduces the value of the transferred charge compared to the theory, but the degradation of the precision of the transferred charge is of the second order.

[0121] In the example of [Fig.5], during the first detection cycle Cd, the signal vp changes from the value vpl to vp2 before the control signal vt changes from the value vtxl to vtx2.

[0122] Thus, the signal vp is in the low state vp2 during the transition between the precharge phase E2 and the charge phase E3. This voltage level of the input logic signal vp induces a count, that is to say a transfer of charges from the injection capacitor Cinj to the integration capacitor Cint. It follows that the value Vint at the terminals of the integration capacity Cint is decreased from voltage vsl to voltage vs2 during this count.

[0123] During the second detection cycle Cd illustrated in [Fig.5], when the signal vt changes from the voltage vtxl to vtx2, no event appears on the input signal vp and the signal vp remains in the high state. It follows that the charges are evacuated towards the third bias voltage Vpol3 and that the output voltage Vint is not modified.

[0124] The voltage Vinj at the terminals of the injection capacitor Cinj clearly illustrates the two discharge phases of this injection capacitor with the voltage levels Vil and Vi2 which result from the precharge phases E2 and the charge phases E3. Similarly, the evolution of the voltage on the injection nodes NI and switching N2 also illustrates the evolution of the voltage in the circuit of [Fig.2] depending on whether or not there is a transfer of the charges from the injection capacitor Cinj to the integration capacitor Cint.

[0125] To ensure the necessary discharges of the injection capacitor Cinj in the precharge E2 and charge E3 phases, and to ensure the accuracy of the charge transferred for counting, the convergence time of the discharge of the injection capacitor Cinj can be chosen to be identical in the precharge E2 and charge E3 phases. This time is defined between the start of phase E2 and the instant of switching of vp between vpl and vp2.

[0126] In addition to the shape of the signals visible in this [Fig.5] and allowing the control of the counter 10 of [Fig.2], it should be noted that the amplitude of the clock signal AD can also be adjusted so that the transfer transistor Mt provides a cascode function with the injection control transistor Met. Thus, this transfer transistor Mt is not in ohmic regime. Typically, the signal can vary between 0 and 5 Volts while the AD signal can vary between 0 and 2.1 Volts. The vt voltage can vary between the vtxl voltage between 0.7 and 1.1 Volts and the vtx2 voltage between 1.5 and 1.9 Volts. By setting the vn signal between 2.3 and 2.5 Volts, the vp signal can vary in the high state between 2.6 and 2.9 Volts and in the low state between 1.9 and 2.2 Volts.

[0127] Of course, the diagram of [Fig.2] is illustrated with NMOS transistors and the first and second bias voltages Vpoll and Vpol2 are fixed to ground while the third bias voltage Vpol3 corresponds to a high voltage level, for example 5 Volts. As is known in CMOS technology, it is possible to produce an equivalent circuit using PMOS transistors to form the injection control transistor Met, the two transfer transistors Mc and Mt, and the two transistors Mdl and Md2 of the switching circuit 16. To do this, the first and second bias voltages Vpoll and Vpol2 correspond to high voltage levels while the third bias voltage Vpol3 is fixed to ground.

[0128] In addition to the generic diagram of the invention illustrated in [Fig.2], several ame- Improvements to this scheme are possible and illustrated in Figures 3 and 4.

[0129] In the embodiment of [Fig.3], the charge evacuation line L1 also comprises an offset capacitor Caz, a first offset transistor Mol and a second offset transistor Mo2. More precisely, the offset capacitor Caz is connected between a controlled input logic signal vdata and the gate of the evacuation transistor Mdl. Thus, the input logic signal vp is obtained from the controlled input logic signal vdata by applying a fixed offset in the offset capacitor Caz. The first offset transistor Mol is connected between the evacuation transistor Mdl and the third bias voltage Vpol3.

[0130] More precisely, in the example of [Fig.3], the first offset transistor Mol consists of a PMOS transistor whose drain is connected to the drain of the evacuation transistor Mdl, whose source is connected to the third bias voltage Vpol3, and whose gate is controlled by a first offset signal setvp generated by the control signal generation circuit.

[0131] The second offset transistor is connected between the drain and the gate of the evacuation transistor Mdl. In the example of [Fig.3], the drain of the second offset transistor is connected to the drain of the evacuation transistor Mdl, and its source is connected to the gate of the evacuation transistor Mdl. The gate of this second offset transistor Mo2 is also controlled by a second offset signal resetvp generated by the circuit 17.

[0132] Thus, in the embodiment of [Fig.3], the circuit 17 also generates the signals setvp, resetvp and vdata because it is necessary to control the voltage level of the controlled input logic signal vdata in a reset period Pr. This reset period Pr is implemented before the counting period Pc during which the multiple detection cycles Cd have previously been described.

[0133] In the example of [Fig.2], this reset period Pr simply consists of activating the reset signal for a sufficient duration to charge the integration capacitor Cint to the initial value. With the circuit of [Fig.3], this reset period Pr can also be used to fix the voltage across the offset capacitor Caz by storing a predetermined quantity of charges in this offset capacitor Caz. This offset capacitor Caz is used to store a quantity of charges corresponding to the difference between the threshold voltages of the transistors Mdl and Md2 so as to subtract this offset value to control the counting or not by the input signal vp. In doing so, the offset of the differential pair formed by the lines L1 and L2 can be canceled during the counting period Pc.

[0134] To do this, the reset period Pr comprises three distinct episodes: a charge episode PI, a discharge episode P2 and a sampling episode P3.

[0135] The charging episode PI simply aims to charge the offset capacitance Caz to a first initialization value. In this PI charge episode, as illustrated in Figures 8 and 9, the first offset transistor Mol is on and the second offset transistor Mo2 is on.

[0136] Then, in the discharge episode P2, the first offset transistor Mol is blocked while the second offset transistor Mo2 is conducting. This discharge episode P2 is maintained for a certain number of calibration cycles Ce during which the initialization phases El, precharge E2 and charge E3 are implemented.

[0137] During the sampling episode P3, the first offset transistor Mol is blocked and the second offset transistor Mo2 is blocked.

[0138] To obtain a successive charge transfer from the injection capacitor Cinj to the offset capacitor Caz during the reset period Pr, the controlled input logic signal vdata is set to a reset voltage value vmilieu. For example, the voltage vdata can be set to a voltage between 0.1 and 0.3 Volts.

[0139] Outside the reset period Pr during which charges are successively stored in the offset capacitor Caz, the signals setvp and resetvp are controlled such that the first offset transistor Mol is on and the second offset transistor Mo2 is off in the counting period.

[0140] To be able to manage the application of the voltage vdata from signals common to the whole of a matrix of counters, the analog counter 11 of [Fig.3] can be improved with the diagram of the analog counter 12 of [Fig.4], in which a circuit for generating the variable input logic signal 19 is proposed.

[0141] This circuit 19 comprises a first generation transistor M1 and a second generation transistor M2 operating in switching mode. In the example of [Fig.4] implementing NMOS transistors, the first terminal, source or drain, of the transistor M1 is connected to a first generation signal muxtx while the second terminal, source or drain, of this transistor M1 is connected to the input signal vdata. The second terminal, source or drain, of the transistor M2 is also connected to the input signal vdata while its first terminal, source or drain, is connected to a second generation signal muxvh.

[0142] The outcomp input signal can thus be injected onto the gate of transistors M1 and M2; using the outcomp signal on the gate of transistor M1 and the inverse / outcomp signal on the gate of transistor M2.

[0143] In this embodiment, the control signal generation circuit 17 generates the signals muxtx and muxvh so as to place the signal muxtx in the low state in the charging phase E3 and in the high state in the initialization phases E1 and precharging phases E2 of the counting period Pc. The generation signal muxvh is placed in the high state in the initialization phases E1, precharging E2 and charging phases E3 of the counting period Pc. During the reset period Pr, the first signal of muxtx generation and the second muxvh generation signal are set to a specific voltage level vmilieu to position the reset voltage vmilieu on the vdata input logic signal.

[0144] The transition between the reset period Pr and the counting period Pc is more particularly illustrated with the timing diagrams of the signals in Figures 6 and 7. These signals illustrate how the offset of the signal vp evolves as the calibration cycles Ce allow the injection of the calibrated charges into the injection capacitor Cinj towards the offset capacitor Caz. After the six calibration cycles illustrated in Figures 6 and 7, the voltage vp is almost stable and this voltage vp has an offset of a few millivolts in the counting period Pc. This offset is representative of the difference in the threshold voltages of the transistors Mdl and Md2, it allows to cancel by subtraction during the counting period Pc, the degradation induced by this difference in threshold voltage on the precision of the charge transferred into the capacitor Cint.

[0145] As illustrated in Figures 6 and 7, the calibration cycles Ce can have a duration substantially similar to the detection cycles Cd and, thus, integrate the same phases E1 to E3. To form the episode P3, as illustrated in Figures 10 and 11, the signals resetvp and setvp are not synchronized and there is a small time shift to sample, in the capacitor Caz, the value of the voltage vp obtained at the end of the episode P2. This sampling is followed by the positioning of the voltages corresponding to the counting period Pc.

[0146] Furthermore, Figures 6 and 7 illustrate several detection cycles Cd during which the input signal outcomp is activated. It follows that the output voltage Vint across the integration capacitor Cint decreases several times on the timing diagrams of Figures 6 and 7. With each decrease in this voltage vp, a voltage differential Vstep is visible on the output voltage Vint. This voltage differential can be particularly low with the invention, so as to obtain a 7 or 8-bit analog counter. Typically, this voltage differential Vstep can be between 20 and 30 millivolts.

[0147] The invention therefore makes it possible to obtain a 10-12 analog counter that is more precise than known analog counters because it does not depend to the first order on the technological parameters of the technology used, such as the dispersion of the threshold voltages of the transistors, or the value of the capacitances. Thus, the invention makes it possible to obtain a 10-12 analog counter with a precision of 7 or 8 bits. In addition, the 10-12 analog counter can be produced by CMOS components allowing integration of the 10-12 analog counter in a restricted silicon surface. Thus, the 10-12 analog counter of the invention can be integrated in each pixel of a matrix, for example for sensors using single-ended avalanche photodiodes. photonics. < / e> < / e> < / e> < / e> < / e>

Claims

Claims

1. Analog counter (10-12) of the number of events of at least one input logic signal (vp, vn, vdata, outcomp) during a counting period (Pc), said counting period (Pc) comprising a set of detection cycles (Cd) during which an event of the input logic signal (vp, vn, vdata, outcomp) can be detected, characterized in that the analog counter (10-12) comprises: - a circuit for periodically generating a calibrated quantity of charges (15) for each detection cycle (Cd); - an integration capacitor (Cint) configured to store said calibrated quantity of charges during each detection cycle (Cd) of the counting period (Pc) for which an event of the input logic signal (vp, vn, vdata, outcomp) is detected so that an output voltage (Vint), at the terminals of the integration capacitor (Cint), is representative of the number of events of the input logic signal (vp, vn, vdata, outcomp) detected during the counting period (Pc); - a switching circuit (16) of the calibrated quantity of charges controlled by the input logic signal (vp, vn, vdata, outcomp) to store said calibrated quantity of charges in the integration capacitor (Cint) only when an event is detected on the input logic signal (vp, vn, vdata, outcomp); - a circuit for generating control signals (17) for the analog meter (10-12); and - a reset circuit (18) of the output voltage (Vint) at the terminals of the integration capacitor (Cint) so as to reset the count; - the circuit for periodic generation of a calibrated quantity of charges (15) comprising: - an injection capacitor (Cinj) configured to store the calibrated quantity of charges during each detection cycle (Cd) and connected by one of its terminals to a first bias voltage (Vpoll); - an injection control transistor (Met) whose source is connected to the other terminal of the injection capacitor (Cinj), whose gate is connected to a control voltage (Vt), and whose drain is connected to an injection node (NI); - a load transistor (Mc) whose source is connected to a second bias voltage (Vpol2) and whose drain is connected to the

2. injection node (NI); and - a transfer transistor (Mt) whose source is connected to the injection node (NI) and whose drain is connected to a switching node (N2); - the gate of the two charge and transfer transistors (Mc, Mt) being controlled by clock signals (¢, / <£>) in phase opposition so as to charge said injection capacitor (Cinj), then to transfer the charges accumulated in said injection capacitor (Cinj) to the switching circuit (16); - the control signal generation circuit (17) being configured to control the control voltage (Vt) and the clock signals (¢, / <£>) so as to successively generate the following phases at each detection cycle (Cd): - an initialization phase (El) during which the injection control transistor (Met) and the load transistor (Mc) are on while the transfer transistor (Mt) is off; - a precharge phase (E2) during which the injection control transistor (Met) and the transfer transistor (Mt) are on while the load transistor (Mc) is off, the control voltage (Vt) being set to a first value (vtxl); and - a charging phase (E3) during which the injection control transistor (Met) and the transfer transistor (Mt) are on while the charging transistor (Mc) is off, the control voltage (Vt) being set to a second value (vtx2). Analogue meter according to claim 1, in which the switching circuit (16) comprises two lines (L1, L2): - a charge evacuation line (Ll) comprising a discharge transistor (Mdl) whose source is connected to the switching node (N2) and whose drain is connected to a third bias voltage (Vpol3); and - a charge transfer line (L2) comprising a counting transistor (Md2) whose source is connected to said switching node (N2) and whose drain is connected to the integration capacitor (Cint); - the gate of the transistors (Mdl, Md2) of the two lines (Ll, L2) being controlled by input logic signals (vp, vn, vdata, outcomp) which determine whether the charges stored in the injection capacity (Cinj) are evacuated or transferred to the integration capacity (Cint).

3. An analog counter according to claim 2, wherein the injection control transistor (Met), the two transfer transistors (Mc, Mt), the evacuation transistor (Mdl) and the counting transistor (Md2) are constituted by NMOS transistors, the first bias voltage (Vpoll) and the second bias voltage (Vpol2) corresponding to low voltage levels while the third bias voltage (Vpol3) corresponds to a high voltage level.

4. An analog counter according to claim 2, wherein the injection control transistor (Met), the two transfer transistors (Mc, Mt), the evacuation transistor (Mdl) and the counting transistor (Md2) are constituted by PMOS transistors, the first bias voltage (Vpoll) and the second bias voltage (Vpol2) corresponding to high voltage levels while the third bias voltage (Vpol3) corresponds to a low voltage level.

5. Analog counter according to one of claims 2 to 4, in which the evacuation transistor (Mdl) of the charge evacuation line (Ll) is controlled by a variable input logic signal (vp), while the counting transistor (Md2) of the charge transfer line (L2) is controlled by a fixed signal (vn), so that an activation of the variable input logic signal (vp) in the charge phase (E3) causes a transfer of the calibrated charges in the integration capacitor (Cint).

6. An analog meter according to claim 5, wherein the charge evacuation line (Ll) also comprises: - an offset capacitor (Caz) connected between a controlled input logic signal (vdata) and the gate of the evacuation transistor (Mdl) so that the variable input logic signal (vp) is obtained from the controlled input logic signal (vdata) by applying an offset generated by the voltage of the offset capacitor (Caz); - a first offset transistor (Mol) connected between the drain of the evacuation transistor (Mdl) and the third bias voltage (Vpol3), the source of the first offset transistor (Mol) being connected to the third bias voltage (Vpol3), its drain being connected to the drain of the evacuation transistor (Mdl) and its gate being controlled by a first offset signal (setvp) generated by the control signal generation circuit (17);and - a second offset transistor (Mo2) mounted between the drain and the gate of the evacuation transistor (Mdl), the drain of the second offset transistor;

7. (Mo2) being connected to the drain of the evacuation transistor (Mdl), its source being connected to the gate of the evacuation transistor (Mdl) and its gate being controlled by a second offset signal (resetvp) generated by the control signal generation circuit (17); the control signal generation circuit (17) being configured to control the first offset signal (setvp) and the second offset signal (resetvp) so as to successively generate the following episodes in a reset period (Pr): - a charging episode (PI) of the offset capacitor (Caz) in which the first offset transistor (Mol) is on and the second offset transistor (Mo2) is on; - a discharge episode (P2) of the offset capacitor (Caz) in which the first offset transistor (Mol) is blocked and the second offset transistor (Mo2) is conducting, this discharge episode (P2) being maintained for a certain number of calibration cycles (Ce) during which the initialization (El), precharge (E2) and charge (E3) phases are implemented; and - a sampling episode (P3) of the offset capacitance (Caz) in which the first offset transistor (Mol) is blocked and the second offset transistor (Mo2) is blocked; the controlled logic input signal (vdata) being fixed at a reset voltage value (vmilieu) during the charge (PI), discharge (P2) and sampling (P3) episodes; the control signal generation circuit (17) being configured to control the first offset signal (setvp) and the second offset signal (resetvp) such that the first offset transistor (Mol) is on and the second offset transistor (Mo2) is off in the counting period (Pc). Analogue meter according to one of claims 2 to 6, in which the charge evacuation line (L1) also comprises a circuit for generating the variable input logic signal (19), the latter comprising: - a first generation transistor (Ml) of which a first terminal, source or drain, is connected to a first generation signal (muxtx), a second terminal, source or drain, is connected to the input logic signal (vp, vdata), and the gate is connected to an uncontrolled input logic signal (outcomp); and - a second generation transistor (M2) with a first terminal, source or drain, is connected to a second generation signal (muxvh), a second terminal, source or drain, is connected to the controlled input logic signal (vp, vdata), and the gate is connected to a complementary signal ( / outcomp) of the uncontrolled input logic signal (outcomp); the control signal generation circuit (17) being configured to control the first generation signal (muxtx) and the second generation signal (muxvh) so that: - the first generation signal (muxtx) is in the low state in the charging phase (E3) and in the high state in the initialization (El) and precharge (E2) phases of the counting period (Pc); and - the second generation signal (muxvh) is in the high state in the initialization (El), precharge (E2) and charging (E3) phases of the counting period (Pc);the first generation signal (muxtx) and the second generation signal (muxvh) having a reset voltage (vmilieu) during a reset period (Pr) so as to bring the input logic signal (vdata) to the reset voltage (vmilieu) during a reset period (Pr).;

8. Analog meter according to one of claims 1 to 7, wherein the control signal generation circuit (17) is configured to transmit a clock signal ( / O) to the transfer transistor (Mt) whose amplitude is limited so that the transfer transistor (Mt) is not in ohmic regime in the precharge (E2) and charge (E3) phases.

9. Analog counter according to one of claims 1 to 8, in which the reset circuit (18) is implemented by a transistor (Mr) whose drain is connected to the voltage (Vint) across the integration capacitor (Cint), whose source is connected to an initialization voltage (Vinit) and whose gate is controlled by a reset signal generated by the control signal generation circuit (17).

10. Analog counter according to one of claims 1 to 9, in which the injection capacity (Cinj) and the integration capacity (Cint) are realized by MOS capacities of the same CMOS realization technology.