PROCESS FOR THE PRODUCTION AND TRANSFER OF A TWO-DIMENSIONAL MATERIAL

Abstract

The invention relates to a method for producing and transferring a two-dimensional material, comprising the following steps: growing the two-dimensional material on a surface of a growth substrate such that the two-dimensional material is bonded to the surface of the growth substrate by van der Waals forces, the surface of the growth substrate having a first contact angle with a drop of a liquid, providing a target substrate, the target substrate having a surface having a second contact angle with a drop of the liquid, the second contact angle being strictly greater than the first contact angle; assembling the growth substrate and the target substrate by direct bonding between the two-dimensional material and the surface of the target substrate;andrupture of the interface between the growth substrate and the two-dimensional material by propagation of an interfacial crack at the interface between the two-dimensional material and the growth substrate, the crack front being wetted by the liquid. Figure to be published with the abstract: Figure 1C;

Description

Title of the invention: METHOD FOR PRODUCING AND TRANSFERRING A TWO-DIMENSIONAL MATERIAL TECHNICAL FIELD OF THE INVENTION

[0001] The present invention relates to the field of two-dimensional materials. The invention relates more particularly to a method for producing and transferring a two-dimensional material. TECHNOLOGICAL BACKGROUND OF THE INVENTION

[0002] Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides (MoS2, MoSe2, MoTe2, WS2, WSe2, etc.), are in the form of a monolayer (atomic or molecular) or a stack of monolayers linked together by van der Waals forces. These materials have excellent mechanical, electrical, optical and thermal properties, which make them materials of choice for many applications, in fields as varied as information technology, communication technology, health, energy and transport.

[0003] 2D materials are also considered promising in the field of micro / nanoelectronics, insofar as they make it possible to obtain crystalline layers of very low thickness, typically less than a nanometer. It is thus envisaged to produce electronic components (such as transistors or photodetectors) of nanometric dimensions on substrates of various natures, using the two-dimensional material as a semiconductor material.

[0004] The growth of a 2D material is generally carried out at a very high temperature (800 °C - 1200 °C), which is often incompatible with the substrate on which one wishes to integrate this two-dimensional material, called the target substrate or final substrate. Indeed, this target substrate can already support components (or parts of components) which would be degraded during the synthesis of the 2D material. To overcome this problem, the growth and integration steps are separated. The 2D material is grown on a suitable growth substrate and then the 2D material is transferred from its growth substrate to the substrate of interest. The main difficulty lies in the conservation of the intrinsic properties of the 2D material after transfer.

[0005] The document [“Transfer of Large-scale two dimensional semiconductors: challenge and developments”, Watson et al., 2D materials, 8, 2021, 032001] describes several known transfer processes.

[0006] A first category of processes uses a support layer (polymer or metal) placed on the 2D material. This support layer provides mechanical support of the 2D material during transfer, mainly between the time the 2D material is detached from the growth substrate and the time it is placed on the target substrate. This helps reduce deformations of the 2D material during transfer.

[0007] The documents [“Surface-energy-assisted perfect transfer of centimeter-scale monolayer and few-layer MoS2 films onto arbitrary substrates”, Gurarslan et al., ACS Nano, 2014 Nov 25;8(11):11522-8] and [“Large-Area Transfer of 2D TMDCs Assisted by a Water-Soluble Layer for Potential Device Applications”, Madan Sharma et al., ACS Omega 2022, 7, 11731-11741] describe two examples of transfer methods using a polymer layer.

[0008] The documents [“Layer-engineered atomic-scale spalling of 2D van der Waals crystals”, Ji-Yun Moon et al., Matter, 5, 3935-3946, 2022] and [“Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials”, Jaewoo Shim et al., Science 362, 665-670, 2018] describe two examples of transfer processes using a metal support layer.

[0009] Using a metal rather than a polymer support layer avoids leaving polymer residues on the 2D material. However, metal residues and cracks may be generated on the 2D material.

[0010] A second category of transfer processes does not use a support layer. This avoids any polymer or metal residue on the 2D material.

[0011] The document [“Centimeter-scale Green Integration of Layer-by-Layer 2D TMD vdW Heterostructures on Arbitrary Substrates by Water-Assisted Layer Transfer”, Kim et al., Scientific reports, 9, 1641, 2019] describes a process that does away with the support layer.

[0012] The 2D material placed on the growth substrate is immersed in water. The water then produces an immediate delamination of the 2D material which detaches from the growth substrate and floats on the surface of the water. It is then necessary to recover the 2D material, which is then in the form of a thin film, and then place it on the target substrate.

[0013] Leaving a film as thin as the 2D material floating and then handling it without mechanical support causes creases and holes in the material. These defects persist once the 2D material is bonded to the target substrate and contribute to deteriorating the performance of the final device. They are, in particular, particularly detrimental when optical and photoluminescence applications are envisaged.

[0014] Furthermore, the manipulation of 2D material in water (or more generally in any type of liquid) is not suitable for transferring layers with a surface area greater than a few square centimeters, nor for the clean room environment of the microelectronics industry. Summary of the invention

[0015] There is therefore a need to improve existing methods for transferring a 2D material onto a given target substrate.

[0016] In particular, there is a need for a method for producing and transferring a 2D material which does not generate polymer and / or metal residues, nor mechanical deformations, at the level of the 2D material.

[0017] According to the invention, this need is tended to be satisfied by providing a method for producing and transferring a two-dimensional material, comprising the following steps: • Growing the two-dimensional material on a surface of a growth substrate such that the two-dimensional material is bound to the surface of the growth substrate by van der Waals forces, the surface of the growth substrate having a first contact angle with a drop of a liquid, • Providing a target substrate, the target substrate having a surface having a second contact angle with a drop of the liquid, the second contact angle being strictly greater than the first contact angle; • Assembly of the growth substrate and the target substrate by direct bonding between the two-dimensional material and the surface of the target substrate; and • Breaking the interface between the growth substrate and the two-dimensional material, by applying a mechanical stress to the assembly of the growth substrate and the target substrate to generate and propagate a crack front at the interface between the growth substrate and the two-dimensional material, and by placing the assembly of the growth substrate and the target substrate in an environment such that a liquid front forms at the interface between the growth substrate and the two-dimensional material, the mechanical stress being configured so that the crack front is wetted by the liquid.

[0018] Thus, the surface of the growth substrate and the mechanical stress are configured so that the crack front is wetted by the liquid throughout the propagation of the crack. This makes it possible to separate the two-dimensional material and the growth substrate by adhesive rupture, since the crack is confined in the interface between the growth substrate and the two-dimensional material.

[0019] In addition, providing a wetting capacity (with respect to the liquid) of the surface of the target substrate less than that of the surface of the growth substrate makes it possible to obtain a weakened interface between the growth substrate and the two-dimensional material. The adhesive failure will take place at this interface and not at the interface between the target substrate and the two-dimensional material, which is therefore more resistant to such adhesive failure.

[0020] This allows the constraints to be released when implementing the stress. mechanical, and therefore to separate the growth substrate from the target substrate (the two-dimensional material being bonded to this target substrate) easily, without requiring complex equipment, for example by carrying out a simple separation by wedge insertion.

[0021] The difference in contact angle, and therefore wettability, of the surfaces of the target substrate and the growth substrate further makes it possible to obtain a method suitable for a wide variety of combinations of substrates and two-dimensional materials compared to methods based on intrinsic properties of the substrates and / or the two-dimensional material. Indeed, the wettability of the substrates is not necessarily an intrinsic property of the substrate. It can be easily acquired (low-wetting substrates can be made very wetting or vice versa) using, for example, physicochemical surface treatments.

[0022] In addition, thanks to direct bonding, the target substrate acts as a support layer for the two-dimensional material. This makes it possible to maintain mechanical support for the two-dimensional material during transfer, while avoiding the steps of forming and removing a support layer (because they are no longer necessary).

[0023] The absence of the support layer also makes it possible to avoid any residue of polymer or metal (these being bound to the support layer), nor does it cause deterioration because no material is deposited on the 2D material.

[0024] Direct bonding, as well as the fracture step, are further compatible with the microelectronics industry and applicable to 2D material layers with large areas. Direct bonding is in fact commonly used on a large scale and on 300 mm wafers to transfer thin semiconductor layers.

[0025] In addition to the characteristics which have just been mentioned in the preceding paragraphs, the preparation and transfer method according to the invention may have one or more complementary characteristics among the following, considered individually or according to all technically possible combinations: • The difference between the first and second contact angles is strictly greater than 10°, preferably greater than 30°, preferably greater than 50°. • Providing the target substrate includes treating the surface of the target substrate so as to increase the second contact angle. • The method comprises, before the step of growing the two-dimensional material, a step of treating the surface of the growth substrate so as to reduce the first contact angle. • The mechanical stress is configured to allow the crack front to advance at a speed less than or equal to 100 pm / s, preferably less than or equal to 10 pm / s, more preferably less than or equal to 1 pm / s. • The mechanical stress is exerted by a blade of lesser thickness or equal to 500 pm, preferably with a thickness less than or equal to 300 pm, more preferably less than or equal to 100 pm. • The thickness of the blade is less than or equal to 100 pm, and the blade is inserted at a first speed to initiate the crack and at a second speed to propagate the crack in the interface between the growth substrate and the two-dimensional material, the first speed being less than or equal to 1 pm / s, and the second speed being greater than the first speed and less than or equal to 100 pm / s. • In the step of breaking the interface between the growth substrate and the two-dimensional material, the assembly of the growth substrate and the target substrate is placed in the liquid. • The liquid is deionized water or an ionic solution. • During the step of breaking the interface between the growth substrate and the two-dimensional material, the assembly of the growth substrate and the target substrate is placed in a gaseous medium comprising deionized water vapor or vapor of an ionic solution. • The two-dimensional material is preferably graphene, hexagonal boron nitride (h-BN) or a transition metal dichalcogenide. • The surface of the growth substrate and the surface of the target substrate are each formed from a material selected from silicon (Si), germanium (Ge), silicon dioxide (SiO2), silicon carbide (SiC), indium phosphide (InP), gallium arsenide (AsGa) and sapphire (A12O3). • The surface of the growth substrate is formed from a base layer of silicon or germanium covered or not with a surface layer of a material chosen from the following materials: aluminum (Al), silicon nitride (Si3N4), copper (Cu), titanium (Ti), alumina (A12O3), silicon dioxide (SiO2), hafnium oxide (HfO2), nickel (Ni), graphene. BRIEF DESCRIPTION OF THE FIGURES

[0026] Other characteristics and advantages of the invention will emerge clearly from the description given below, for information purposes only and in no way limiting, with reference to the appended figures, among which: • Figures 1A to 1C schematically represent steps of a method for producing and transferring 2D material according to the invention; • [Fig.2] schematically represents, on the one hand, a drop of liquid deposited on the surface of a growth substrate in accordance with the invention and, on the other hand, a drop deposited on the surface of a substrate target in accordance with the invention; • [Fig.3] represents, for different target substrates, measurements of the drop contact angle of each surface of the target substrate as a function of a concentration of CF4 and SF6, obtained after treatment of these surfaces; • [Fig.4] is a top view photograph of the growth substrate obtained following a first example of implementation of the method shown in Figures 1A to 1C; the non-transferred two-dimensional material appears in dark gray, • [Fig.5] is a top view photograph of the growth substrate obtained following a second example of implementation of the method shown in Figures 1A to 1C, the non-transferred two-dimensional material appears in dark gray.

[0027] For clarity, identical or similar elements are identified by identical reference signs throughout the figures. DETAILED DESCRIPTION

[0028] The present invention aims to improve the methods of transferring a two-dimensional material onto a substrate of interest, also called a target substrate.

[0029] Figures 1A to 1C illustrate steps S1 to S3 of a method for producing and transferring a two-dimensional material 10. According to this method, the two-dimensional material 10 is transferred from a growth substrate 20 to a support substrate 30, hereinafter referred to as “target substrate 30”.

[0030] A two-dimensional (2D) material refers to a material composed of a mono-atomic or mono-molecular sheet (also called a monolayer) or a stack of N identical mono-atomic or mono-molecular sheets (N being a natural number greater than or equal to 2). By identical sheets, we mean sheets having atoms or molecules of the same nature and ordered in the same way. The 2D material is called "mono-layer" when it comprises only one sheet and "multi-layer" when it comprises several sheets. Within each sheet, the atoms (or molecules) are linked (linked) to each other (them) by covalent bonds. The different sheets of a multi-layer 2D material are linked to each other by van der Waals forces.

[0031] Here, the material is considered to have “2D” properties when it comprises fewer than ten mono-atomic or mono-molecular layers (N<10, for example N=3). Beyond that, its properties are those of a massive material.

[0032] Step S1 represented by [Fig.lA] comprises providing the growth substrate 20, growing the 2D material 10 from a surface 20s of the growth substrate 20, and providing the target substrate 30.

[0033] At the atomic scale, the 2D material 10 is thus bound (or adheres) to the surface 20s of the growth substrate 20 by van der Waals forces. The interface between the 2D material and the growth substrate 20 is denoted “II” in the figures.

[0034] The 2D material 10 may be graphene, hexagonal boron nitride (h-BN), or a transition metal dichalcogenide, such as tungsten disulfide (WS2), molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2), or tungsten diselenide (WSe2).

[0035] The growth substrate 20 is a wafer.

[0036] The growth substrate 20 has a free surface 20s (denoted more simply “surface 20s of the growth substrate” hereinafter) serving as a support for the growth of the 2D material 10. Preferably, the free surface 20s of the growth substrate 20 corresponds to one of its main faces.

[0037] The growth substrate 20 may be formed from a single material, as shown in [Fig. 1A]. The growth substrate 20 may thus be formed from a material chosen from the following materials: silicon (Si), silicon dioxide (SiO2), sapphire (A12O3), silicon carbide (SiC), germanium (Ge), gallium arsenide (AsGa), indium phosphide (InP). Alternatively, it may comprise a support layer made of a first material, for example silicon, and a surface layer made of a second material distinct from the first material. The surface layer is arranged on the support layer 11 and forms the surface 20s of the growth substrate. The second material may be chosen from the following materials: aluminum (Al), copper (Cu), titanium (Ti), silicon dioxide (SiO2), silicon nitride (Si3N4), alumina (A12O3), nickel (Ni), graphene.

[0038] The diameter of the growth substrate 20 may be greater than 200 mm, for example 300 mm.

[0039] By way of example, the growth substrate 20 may be a silicon wafer 300 mm in diameter, having a thickness generally between 300 μm and 1000 μm, preferably 775 μm and a mechanical rigidity characterized by a Young's modulus of the order of 129 GPa.

[0040] The surface 20s of the growth substrate 20 has a wettability character with respect to a liquid 50 sufficient for the liquid 50 to spread over this surface 20s.

[0041] In the following description, the term "wetting" generally covers all the phenomena (surface diffusion, mass transfers at the interface, etc.) which occur when a liquid is brought into contact with a solid surface. These phenomena depend on the pair formed by the nature of the liquid and the material of the solid surface.

[0042] In practice, the wettability of a solid surface is measured by the wetting angle, also called the drop contact angle, or more simply the angle contact, what does a drop of liquid do on the solid surface.

[0043] This contact angle is represented in figure 2 for the pair {surface 20s of the growth substrate 20; liquid 50], where it is noted “first contact angle #i”.

[0044] As shown in Figure 2, the first contact angle is defined between the solid surface 20s and the triple line 50t (triple interface between the external gaseous medium or atmosphere ATM, the liquid 50 and the solid surface 20s) and is strictly less than 90°. Thus, the liquid 50 spreads over the surface 20s of the substrate. It is noted that in the remainder of the description, the external gaseous medium ATM is considered to be air.

[0045] Preferably, the first contact angle is less than 30°. This allows better wetting (better spreading) of the liquid 50 on the surface 20s of the growth substrate 20.

[0046] The first contact angle can also be zero. In this configuration, the wetting is said to be “total”, that is to say that a drop of the liquid 50 spreads completely to form a film of constant thickness on the surface 20s of the growth substrate. In practice, it is considered that there is total wetting when a contact angle of less than 5° is measured.

[0047] The liquid is advantageously pure and non-volatile, with low surface tension, for example less than 80 mN / m. The liquid is preferably chosen from the following liquids: water or an ionic solution.

[0048] For example, the liquid may be deionized water. Note that when the liquid is water-based, the terms "hydrophobic" and "hydrophilic" are generally used to denote, respectively, a rather non-wettable surface and a rather wettable surface.

[0049] In another example, the liquid may be a potassium hydroxide (or KOH) solution. In yet another example, the liquid may be sodium hydroxide (or NaOH) dissolved in water.

[0050] Preferably, the liquid 50 is deionized and filtered water to avoid any particulate contamination.

[0051] The growth technique used to grow the 2D material 10 on the surface 20s of the growth substrate 20 may be atomic layer deposition (ALD), vapor phase epitaxy (VPE), chemical vapor deposition (CVD) from solid or gas precursors, or from metal-organic precursors (MOCVD), plasma-enhanced chemical vapor deposition (PECVD) or molecular beam epitaxy (MBE). It depends on the 2D material to be grown. The technique used generates van der Waals forces between the 2D material 10 and the surface 20s of the growth substrate 20.

[0052] The target substrate 30 is also in the form of a wafer.

[0053] The diameter of the target substrate 30 may be greater than 200 mm, for example 300 mm.

[0054] The target substrate 30 may comprise a support layer 31, for example made of silicon. or germanium, and a surface layer 32 disposed on the support layer 31, as shown in [Fig.lA].

[0055] The surface layer 31 is formed from a material chosen from (but not limited to) the following materials: silicon (Si), germanium (Ge), silicon dioxide (SiO2), silicon nitride (Si3N4) or sapphire (A12O3).

[0056] The target substrate 30 may be intended for the manufacture of integrated circuits and comprise electronic components or parts of electronic components, typically in the support layer 31.

[0057] Alternatively, the target substrate 30 is formed from a single material, this being then chosen from the following materials: silicon (Si), germanium (Ge), silicon carbide (SiC), gallium asenide (AsGa) or sapphire (A12O3).

[0058] The provision of the target substrate 30 can thus comprise a sub-step of depositing the surface layer 32 on the support layer 31.

[0059] The surface layer 32 of the target substrate 30 has a free surface forming the surface 30s of the target substrate 30.

[0060] Preferably, the surface 30s of the target substrate corresponds to one of its main faces.

[0061] The surface 30s of the target substrate 30 has a contact angle #2 between a drop of the liquid 50 and the surface 30s (denoted “second contact angle” hereinafter) strictly greater than the first contact angle (of the surface 20s of the growth substrate 20). This second contact angle 6½, as well as the gap A 8 between the first and second contact angles 02 are represented by [Fig.2].

[0062] Thus, the liquid 50 spreads and flows less well on the surface 30s of the target substrate than on that of the growth substrate 20. The second contact angle ^2 approaches, reaches or exceeds the value of 90° which corresponds to the non-wetting threshold.

[0063] In other words, by thus providing a second contact angle ^2 larger than the first contact angle, the liquid 50 is rather wetting on the surface 20s of the growth substrate 20, while it is rather non-wetting on the surface 30s of the target substrate 30.

[0064] The greater the difference A 8 between the first and second contact angles ^2, the more the wetting regime between the two surfaces 20s and 30s is different. In this case, the greater this difference A 8, the more the liquid 50 will be wetting on the surface 20s of the growth substrate and little wetting (up to being non-wetting) on the surface 30s of the target substrate 30.

[0065] Preferably, the difference A 0 between the first and second contact angles is greater than 10°, preferably greater than 30°.

[0066] Even more advantageously, the second contact angle is greater than 50° compared to the first contact angle. This makes it possible to obtain a surface 30s of the target substrate which has a totally non-wetting character. In other words, this makes it possible to ensure that the liquid does not spread over the surface 30s of the target substrate 30.

[0067] The growth substrate 20 and / or the target substrate 30 may be surface treated to achieve the specified (desired) deviation A d between the first and second contact angles.

[0068] This type of surface treatment makes it possible to modify the physicochemical wetting properties and therefore the contact angle of the substrates (specifically their surfaces). For example, a silicon or germanium substrate, naturally wettable by most liquids (it has a high energy surface) can be made poorly wettable (or hydrophobic, when the liquid is water or deionized water) by these treatments. The growth substrate can also be treated to make it even more wettable: a naturally hydrophilic silicon growth substrate can, in fact, be made even more hydrophilic (or super hydrophilic).

[0069] This makes it possible to use growth substrates and target 20, 30 of the same nature. For example, the growth substrate 20 and the target substrate 30 may both be silicon or germanium wafers. They may even come from the same source substrate made of silicon or germanium separated in two (each part provides a substrate).

[0070] This also provides the advantage of increasing the choice of possible materials for each substrate (growth, target), since their wettability character (or their contact angle) can be acquired a posteriori, and does not constitute an intrinsic property of the substrate(s). The method according to the invention is thus versatile, in the sense that it is capable of adapting to different substrates.

[0071] The provision of the target substrate 30 may thus comprise a surface treatment of the target substrate intended to increase the value of the second contact angle, i.e. to reduce the wettability of its surface 30s.

[0072] Thus, before the implementation of this surface treatment, the second contact angle 02 of the surface 30s of the target substrate 30 has an initial value, and it has a final value after the completion of this surface treatment. The final value (post-treatment) of the second contact angle 02 is greater than the initial value of the second contact angle 02 and is strictly greater than the first contact angle G\.

[0073] This surface treatment (also called surface functionalization) is for example useful when the target substrate is made of silicon, germanium or silicon dioxide. Indeed, as detailed previously, the target substrate 30 then has, in its natural state, a low initial value of the second contact angle, which makes it wettable with respect to most aqueous liquids.

[0074] Several methods can then be implemented. Each method is suitable for one or more pairs of material from the 30s surface of the target substrate and liquid.

[0075] When the target substrate 30 is formed of silicon or germanium and the liquid is water or deionized water, a first category of methods consists of covering the surface 30s of the target substrate with a hydrogenated, hydrophobic mat. This makes it possible to obtain a surface 30s of the target substrate having a second contact angle of between 70° and 80°.

[0076] According to one of the methods of this first category, the surface treatment comprises a deoxidation operation consisting of removing the thin layer of oxide present naturally (in the open air) on the surface of the target substrate 30 (also called native oxide), then an operation of passivation of the surface 30s of the target substrate by hydrogen atoms.

[0077] This passivation operation of the surface 30s can be carried out by dipping the target substrate 30 in a solution based on hydrogen fluoride (HF). The HF concentration of this solution is, in mass concentration, greater than 0.01%, preferably greater than 1%, more preferably greater than 48%.

[0078] Among the specified concentrations, the highest (1%, 48%) are particularly advantageous. Indeed, they modify the roughness of the material less, which thus remains very low, of the order of 2 angstroms (quadratic residual size of the asperities). This conservation of the very low roughness of the surface 30s of the target substrate 30 makes it possible to improve the quality of the bonding carried out during step S2.

[0079] Alternatively, the passivation operation can be carried out using hydrogen fluoride in vapor form.

[0080] Alternatively, the passivation operation may consist of a high-temperature vacuum treatment, greater than 700°C or, preferably, greater than 800°C. The treatment is then carried out in a reducing atmosphere containing hydrogen. These high-temperature treatments have the effect of reducing the roughness of the 30s surface of the target substrate obtained after the treatment, which is favorable to good bonding quality during step S2.

[0081] According to another method belonging to the first category of treatment methods, the surface treatment comprises an epitaxy operation of silicon or germanium on the surface 30s of the target substrate, so as to obtain a surface layer of silicon or germanium with a thickness greater than 10 nm and even su- greater than 50 nm. Furthermore, before the completion of this epitaxy operation, the target substrate 30 is placed under a reducing atmosphere containing hydrogen.

[0082] A second category of methods consists of covering the surface 30s of the target substrate with a fluorinated carpet, also hydrophobic. This makes it possible to obtain a surface 30s of the target substrate having a second contact angle greater than 40°. This second category of methods offers the advantage of being compatible with target substrates made of silicon dioxide (in addition to those made of silicon or germanium). The methods of this second category use a fluorinated plasma, for example a nitrogen plasma comprising carbon tetrafluoride (CF4) or sulfur hexafluoride (SF6).

[0083] [Fig.3] represents the contact angles measured on silicon target substrates (denoted “Si bulk” in the figure) and silicon dioxide target substrates (denoted “SiO2” in the figure) as a function of the percentage of SF6 or CF4 mixed with nitrogen.

[0084] As shown in Figure 3, when the target substrate 30 is formed of SiO2, the second contact angle varies little as a function of the SF6 concentration or the CF4 concentration, since it is between 45° and 50°. The second contact angle ^2 varies more widely as a function of the SF6 or CF4 concentration when the target substrate is made of silicon, but second contact angles greater than 40° can be obtained. Thus, for an SF6 concentration of between 10% and 50% the second contact angle is greater than 50°. In addition, for a CF4 concentration greater than 70%, the second contact angle is greater than or equal to 60°.

[0085] A third category of methods consists of depositing a surface layer having high contact angles on the surface 30s of the target substrate 30. The target substrate 30 thus treated (therefore comprising this surface layer produced by the surface treatment) constitutes the target substrate 30 used during the following step S2.

[0086] The document “Silane Modification of Glass and Silica Surfaces to Obtain Equally Oil-Wet Surfaces in Glass-Covered Silicon Micromode Applications” by Grate et al., Water Resources Research, 2013, 49 (8), 4724, describes an example of a process belonging to this third category.

[0087] In this example, the surface treatment comprises the formation, on a target substrate 30 of silicon or silicon dioxide, of a superhydrophobic layer based on hexamethyldisilazane (or HDMS). The term “superhydrophobic” is used because of the very high contact angle, typically equal to or close to 100°, which is obtained on the surface, once the treatment is completed. The document “Preparation and Characterization of Superhydrophobic Surfaces Based on Hexamethyldisilazane-Modified Nanoporous Alumina.” by Tasaltin et al., Nanoscale Res Lett 2011, 6 (1), 487 describes that such an HDMS layer can also be formed on an alumina substrate.

[0088] The document “Delivering Octadecylphosphonic Acid Self-Assembled Monolayers on a Si Wafer and Other Oxide Surfaces. » by Nie et al., J. Phys. Chem. B 2006, 110 (42), 21101-21108, describes another example of a process belonging to the third category. According to this process, the surface treatment may include an operation of forming self-assembled monolayers (also called SAM for "Self-Assembled Monolayer" in English) of octadecylphosphonic acid (or OPA) on the surface 30s of the target substrate 30, using a non-polar medium having a dielectric constant of about 4 (for example, trichloroethylene). This method offers the advantage of being compatible with many oxide surfaces. It also allows for a lower final residual roughness than that obtained when a layer of HDMS is formed.

[0089] As mentioned previously, the growth substrate 20 may also undergo a surface treatment aimed at lowering the first contact angle. In other words, the surface 20s of the growth substrate 20 then has an initial value before the implementation of this surface treatment, and a final value after the completion of this surface treatment. The final value (post-treatment) of the first contact angle is lower than the initial value of the first contact angle and strictly lower than the second contact angle.

[0090] In step S2 of [Fig. 1B], the growth substrate 20 (covered with the 2D material 10) and the target substrate 30 are assembled by direct bonding (in other words, without adding adhesive or metallic material) between the 2D material 10 and the surface 30s of the target substrate 30. The free surface of the 2D material 10 is thus brought into (direct) contact with the surface 30s of the target substrate 30.

[0091] The S2 bonding is generally implemented at room temperature and ambient pressure. However, it is possible to implement it under vacuum and at room temperature. Alternatively, the S2 bonding can be implemented at a temperature between 25°C and 400°C, for example equal to 100°C.

[0092] The 2D material 10 is then bound by van der Waals forces to the surface 30s of the target substrate 30, constituted here by the material of the surface layer 32 (see [Fig.lB]). The interface between the 2D material and the target substrate 30 is denoted “12” in [Fig.lB],

[0093] The bonding surfaces, namely the free surface of the 2D material 10 and the 30s surface of the target substrate 30, advantageously have a surface roughness of less than 0.5 nm and even less than 0.2 nm. This roughness value, as well as all those given subsequently, are expressed as a quadratic mean value. The quadratic mean roughness (denoted Rq) is determined by a statistical analysis of an atomic force microscope image, taking as a sample a surface of 1x1 pm2.

[0094] 2D material growth techniques make it possible to obtain a roughness of surface less than 0.5 nm and even less than 0.2 nm. On the other hand, the target substrate 30 may have undergone, between the step S1 of providing the target substrate 30 and the step S2 of assembly by bonding, a polishing step (for example by chemical-mechanical planarization or CMP) of its bonding surface 30s so as to obtain a surface roughness value less than 0.5 nm and even less than 0.2 nm.

[0095] At the end of step S2, the assembly 40 represented by [Fig.lB] is obtained. As shown in [Fig.lB], this assembly 40 is a multi-material monoblock since it successively comprises, from bottom to top in the figure, the target substrate 30, the interface 12, the 2D material 10, the interface II and the growth substrate 20.

[0096] The bi-material interfaces II, 12 have a thickness (measured perpendicular to the plane of the assembly 40) less than or equal to 1 nm in average value.

[0097] Finally, step S3 of [Fig.1C] (in particular the right-hand figure of [Fig.1C]) consists of separating the growth substrate 20 and the target substrate 30 so that at least a portion of the 2D material 10 detaches from the growth substrate 20 and remains stuck to the target substrate 30.

[0098] As shown in [Fig.lC] (in particular the left figure), the separation of the growth substrate 20 and the target substrate 30 is accomplished by breaking the interface II between the growth substrate 20 and the 2D material 10 by propagation, in this interface II, of an interfacial crack F wetted up to its front Fa by the liquid 50.

[0099] One way to wet the crack front Fa throughout the advance of the crack F consists of moving the crack front Fa at a speed slow enough for the liquid 50 to spread to this front Fa.

[0100] Keeping the crack front Fa wetted by the liquid 50 makes it possible, in particular, to ensure that the crack F is constrained in the interface II. In other words, this allows the rupture to be an adhesive type rupture, i.e. the rupture to occur at the interface II, the 2D material being retained on the surface 30s of the target substrate 30 and the growth substrate being detached from the assembly 40. This makes it possible to successfully transfer the 2D material.

[0101] Furthermore, this makes it possible to carry the liquid 50 (the latter forming a film) over the entire surface 20s of the growth substrate 20, even when the latter has a large surface area (diameter of 200 mm, or even 300 mm). It is recalled that, unlike the solutions of the prior art, the liquid 50 cannot here infiltrate naturally onto the surface 20s of the growth substrate, due to the rigidity of the target substrate and its surface area.

[0102] In this case, thanks to the liquid 50 which wets the crack F up to its front Fa, the growth substrate and the 2D material are interposed by this film of liquid 50 and therefore separated.

[0103] The wetting of the crack front Fa by the liquid 50 contributes to reducing the energy interface between the 2D material 10 and the growth substrate 20, thus facilitating the propagation of the crack F, which can then develop more easily into an interfacial crack extending over almost the entire interface II.

[0104] The separation S3 between the growth substrate 20 and the 2D material can in particular be accomplished in the manner described below.

[0105] The assembly 40 is placed in an external environment such that a liquid front 50 forms in contact with the assembly 40 (and, consequently, at the crack front Fa of the interface II).

[0106] This external environment may be a liquid medium constituted by the liquid 50 itself. In this case, the assembly is immersed in the liquid 50.

[0107] Alternatively, the external environment may be a gaseous atmosphere comprising an excess of the liquid in vapor form. Thus, the liquid in vapor form condenses upon contact with the assembly 40. For example, the environment may be air with 80% or more humidity (water vapor).

[0108] In order to initiate and propagate the interfacial crack, a mechanical stress is applied to the assembly 40, from initiation sites provided by the assembly 40.

[0109] Preferably, these initiation sites are located on the outer (peripheral) surface of the 2D material 10 of the assembly 40.

[0110] In practice, a blade L, a wedge (or point) or a wire can be inserted between the growth substrate 20 and the target substrate 30, manually or by means of a machine. Alternatively, a force can be exerted on at least one of the substrates (or wafers). Naturally, other means of mechanical constraints can be used. For example, it is possible to achieve traction by means of jaws glued to the rear faces of the (growth, target) substrates 20, 30, at the location of the first mechanical stress. It is possible to have only one jaw by clamping (pinching) the growth substrate or the target substrate on a support, for example with a vacuum. It is possible to replace the jaw(s) with rings which use the chamfers of the growth and target substrates 20, 30 to exert traction in the manner described in document US9583374B2.

[0111] In the following description, it is considered that the constraint means used to implement the first mechanical stress is a blade L such as that represented by [Fig.lC]. However, its teachings are also valid for the other mechanical constraint means, in particular the wedge and the wire.

[0112] The mechanical stress can be broken down into two successive mechanical stresses.

[0113] Initially, a first mechanical stress produces an initial detachment of the 2D material relative to the growth substrate 20.

[0114] This first mechanical stress is quite delicate because when inserting the wedge, or the blade, the cracking speed can quickly exceed 100 pm / s. Indeed, the wedge, or the blade, is very close to the crack front Fa. It is thus preferable, to carry out the first mechanical stress, to use means which make it possible to apply traction to one and / or the other of the substrates (growth, target). The use of a ring in the chamfer is for example well adapted.

[0115] The first mechanical stress may nevertheless produce, in an undesirable manner, a crack in the interface 12 between the target substrate 30 and the 2D material 10. This possible presence of a crack in the interface 12 is however not problematic, for the reasons given below.

[0116] Due to the difference between the first and second contact angles, the liquid 50 is wetting for the surface 20s of the growth substrate at the interface II of the assembly, but little or not wetting for the surface 30s of the target substrate at the interface 12. Consequently, the liquid 50 from the external environment of the assembly 40 infiltrates the edges of this crack or through some structural defects of the 2D material to return and preferentially wet the interface II between the 2D material 10 and the growth substrate 20. This then makes it possible to bifurcate the crack at the correct interface (interface II) when the opening speed returns below 100 pm / s.

[0117] On the other hand, this liquid 50 does not infiltrate on the side or through any defect of the 2D material 10 to go towards the interface 12 between the 2D material 10 and the target substrate 30 thanks to the absence of wetting on the surface 30s of the target substrate 30. No process capable of causing a bifurcation of the crack is therefore activated in this interface 12. Consequently, this interface 12 remains intact and the 2D material remains bonded to the target substrate 30.

[0118] Thus, thanks to the wetting properties specified for the surfaces 20s, 30s of the growth and target substrates, the separation of the growth substrate and the target substrate is carried out selectively (because it concerns the interface II) and in a simple manner: immersing the assembly 40 in the liquid 50 is simple to implement and the mechanical stress does not require nanometric precision equipment (on the scale of the thickness of the interface II).

[0119] The thickness eL of the blade L is chosen so that the initial detachment is sufficiently slow (gentle) so that the front of this detachment advances at the wetting speed of the liquid 50 on the surface 20s of the growth substrate 20.

[0120] Preferably, a blade with a thickness of less than 500 μm, preferably less than 300 μm, and for example with a thickness of 100 μm can be used to exert the first mechanical stress.

[0121] When the thickness of the blade is between 500 pm and 100 pm, the speed of propagation of the initial detachment is generally much higher than the wetting speed of the liquid 50 on the surface 20s of the growth substrate forming the interface II. The detachment can then sometimes take place at the interface 12 as explained previously.

[0122] To reduce the extent of this initial detachment, and thus transfer the 2D material as much as possible, the thickness of the blade can advantageously be reduced to 100 pm or less. This makes it possible to control the propagation speed of the front Fa of the initial detachment so that it is sufficiently low to avoid or minimize poor initial detachment. In practice, the blade L is connected to a linear motorization means configured to move the blade L at a speed which is preferably less than or equal to 100 pm / s.

[0123] The insertion speed of the blade L can then be chosen to be less than or equal to 100 pm / s, preferably less than or equal to 10 pm / s, more preferably less than or equal to 1 pm / s, which corresponds, respectively, to a propagation speed of the detachment front less than or equal to 100 pm / s, preferably less than or equal to 10 pm / s, more preferably less than or equal to 1 pm / s.

[0124] Such ranges of insertion (and crack propagation) speeds make it possible to increase the area of ​​2D material transferred, since the area corresponding to the initial detachment, where the 2D material is not transferred, is reduced. For example, this area may represent less than 10% of the area of ​​the 2D material.

[0125] Then, the mechanical stress continues to propagate the initial detachment and thus develop it into the interfacial crack F. This second phase of mechanical stress is called "second mechanical stress". In other words, the second mechanical stress "takes over" from the first mechanical stress.

[0126] The second mechanical stress may be identical to the first mechanical stress in that it may be performed with the same constraining means (e.g., blade, wedge, wire, rings, jaws). For example, the same blade L as previously described may be used, and inserted with the same insertion speed as configured for the first mechanical stress, namely a speed less than or equal to 100 pm / s, preferably less than or equal to 10 pm / s, more preferably less than or equal to 1 pm / s.

[0127] Alternatively, the insertion speed may be lower during the first mechanical stress than during the second mechanical stress. This makes it possible to compensate for the speed of progression of the initial detachment which is rapid compared to that of the progression of the crack F. For example, the speed of insertion of the blade during the first mechanical stress is less than or equal to 1 pm / s and the speed of insertion of the blade during the second mechanical stress is less than or equal to equal to 100 pm / s and greater than 1 pm / s. A blade of variable thickness (thinner to initiate the crack than to propagate it) can also be considered.

[0128] This second mechanical stress is exerted on the assembly 40 until the completion of the interfacial rupture II.

[0129] The temperature of the liquid 50 can be regulated between 15°C and 25°C, for example at 20°C.

[0130] Advantageously, the temperature of the liquid 50 can be lowered so as to increase in situ the contact angle of the surface 30s of the target substrate 30. This makes it possible to increase the non-wetting character of this surface 30s. The interfacial rupture is then more efficient. The temperature of the liquid 50 is preferably greater than or equal to 5°C and less than or equal to 10°C.

[0131] Thus, thanks to the wettable character of the surface 20s of the growth substrate 20 and the non-wettable character of the surface 30s of the target substrate 30, as well as to the configuration of the mechanical stress and to the external environment of the assembly 40, an adhesive type interface rupture is produced predominantly, typically up to reaching 90% of the surface of the growth substrate, at the interface II between the 2D material 10 and the growth substrate 20. This makes it possible to successfully transfer the 2D material 10 over a large surface area (typically greater than 90% of the surface area of ​​the growth substrate).

[0132] In other words, thanks to the wettable character of the surface 20s of the growth substrate 20 and the non-wettable character of the surface 30s of the target substrate 30, to the configuration of the mechanical stress and to the external environment of the assembly 40, it is possible to avoid producing an adhesive rupture at the interface 12 between the 2D material 10 and the target substrate 30, which would result in an absence of transfer of the 2D material.

[0133] The 2D material 10 is thus transferred from the growth substrate 20 to the target substrate 30 while avoiding the 2D material being left without support. The method also avoids, unlike the transfer methods of the prior art, the use of a support layer dedicated to maintaining the 2D material (which must be formed and then removed). The target substrate, which is rigid (taking into account the thicknesses of the wafers and their Young's modulus), replaces this support layer.

[0134] This makes it possible to avoid causing deformations such as folds or holes on the 2D material, since the 2D material is never left without sufficient mechanical support. The method also makes it possible to avoid the steps of forming and removing the sacrificial support layer. It does not generate any polymer or metal residue, nor does it cause deterioration, because no material is deposited on the 2D material, unlike the transfer methods of the prior art.

[0135] As a result, the method of Figures 1A-1C is particularly simple to implement. work, compatible with clean room environments of the microelectronics industry and allows the transfer of large-area 2D material. In particular, it can be implemented with wafers of 200 mm or 300 mm diameter.

[0136] The method of Figures 1A-1C is applicable to both a single-layer 2D material and a multi-layer 2D material.

[0137] When the 2D material 10 is composed of a single mono-atomic or monomolecular sheet, this sheet detaches from the growth substrate 30 during the separation step.

[0138] When the 2D material 10 is composed of a stack of several (typically three) mono-atomic or mono-molecular sheets, this stack detaches as a block from the growth substrate 30 during the separation step.

[0139] A first example of implementation of the production method will now be described.

[0140] Step IF

[0141] A stack of three monolayers of MoS2 was obtained on a growth substrate 20 of 200 mm diameter, according to the method described in the document [“Elaboration of monolayers of dichalcogenides of transition metals of group (VI) by organometallic surface chemistry”, S. Cadot, Materials. University of Lyon, 2016. French. NNT: 2016LYSE1075. tel-01530918]. This method includes a step of deposition by ALD at low temperature (about 100 °C) and a step of crystallization of the material at high temperature (900 °C) to obtain the lamellar structure typical of 2D materials.

[0142] The growth substrate 20 is a wafer with a diameter of 200 mm which comprises a support layer (or base layer) made of silicon and a surface layer made of SiO2, obtained for example by thermal oxidation of the support layer made of silicon.

[0143] According to a first implementation variant, the surface of the SiO2 surface layer is cleaned and has a wetting contact angle of less than 10° before the growth of the 2D material.

[0144] According to a second implementation variant, the surface of the superficial layer is not cleaned and has (in its natural state) a wetting contact angle of between 20° and 30° before the growth of the 2D material.

[0145] The target substrate 30 provided is entirely made of silicon.

[0146] In order to increase the drop contact angle of the surface 30s of the target substrate 30, the target substrate is surface treated.

[0147] The surface treatment comprises silicon epitaxy on the 30s surface of the target substrate. The epitaxy is carried out using dichlorosilane (SiH2Cl2) at 950°C.

[0148] Epitaxy is described in more detail below.

[0149] The surface 30s of the target substrate 30 is first prepared according to a process called “HF last”. The preparation comprises chemical cleaning based on caro acid (obtained by a mixture of phosphoric acid H2SO4 and hydrogen peroxide H2O2 at 120°C.

[0150] Cleaning is then followed by rinsing with deionized water, treatment with a mixture of ammonia, hydrogen peroxide and water in proportions of 1 / 1 / 5 at 70°C.

[0151] Rinsing is followed by deoxidation in a bath of HF at 0.1% mass concentration followed by rinsing with deionized water.

[0152] Each operation (cleaning, rinsing, deoxidation) lasts approximately 10 minutes.

[0153] After this cleaning and chemical preparation, the target substrate 30 is heated to 950°C under 20 mbar of hydrogen for 2 minutes. Silicon epitaxy is then carried out on the prepared surface of the target substrate 30 for approximately 10 min at 950°C under 20 mbar of SiH2CL2.

[0154] Finally, the epitaxy ends with a smoothing annealing at 950°C under 20 mbar of hydrogen H2 for 5 min.

[0155] Images of the epitaxial surface of the target substrate 30 were acquired by atomic force microscopy. These images show very low surface roughness, typically less than 0.5 nm. This low roughness is perfectly compatible with direct bonding.

[0156] After epitaxy, the surface of the target substrate is passivated with hydrogen by annealing under a hydrogen-based atmosphere. This surface of the target substrate has a drop contact angle of between 70° and 90°.

[0157] Step S2

[0158] The growth substrate 20 and the target substrate 30 are then assembled, by direct bonding between the 2D material 10 and the silicon of the target substrate 30, preferably at room temperature and in ambient air. The bonding is spontaneous with the propagation of a fairly rapid bonding wave (approximately 20 s to travel the 200 mm diameter).

[0159] Preferably, the direct bonding is performed just after the growth of the 2D material to avoid any particulate contamination.

[0160] Alternatively, the growth substrate and the 2D material are stored in a clean environment without dust or hydrocarbon contaminants. For example, they are stored in a specific box such as the one provided by the company Entegris (DMS Wafer Carrier 8” black antistatic TYP A5 n°780-550000005). The bonding remains identical even after 1 month of waiting.

[0161] Step S3

[0162] The separation of the growth substrate 20 and the target substrate 30 is accomplished by immersion in deionized water (DW) regulated at 21°C.

[0163] The assembly of the growth substrate and the target substrate may remain submerged before separation for one day. It may remain submerged for a longer period, for example more than 10 days, without any deterioration of the bonding being observed.

[0164] The rupture of the interface between the growth substrate and the 2D MoS2 material (and therefore the separation of the growth substrate) is initiated by the introduction of a blade at a speed of 1 pm / s and an acceleration of 10 pm2 / s. This speed is regulated using a linear motor. The hydrophilicity of the SiO2 (of the surface 20s of the growth substrate 20) allows an advance of the deionized water to the SiO2 / MoS2 interface and a separation of the substrates at this interface.

[0165] The 2D material 10 is thus transferred onto the target substrate 30 made of silicon because the interface between the target substrate and the 2D, hydrophobic material does not undergo any interfacial fracture. As shown in [Fig.4], all the MoS2 monolayers are transferred here, over 90% of the surface of the target substrate (the light gray area marked T corresponds, on this photograph of the growth substrate, to the areas where the 2D material 10 has been transferred. The areas marked NT correspond, for their part, to the areas where the 2D material 10 appears because it has not been transferred).

[0166] A second example of implementation of the production method will now be described.

[0167] Step IF:

[0168] In this second example, the same growth substrate 20 is used with the same 2D MOS2 material as in the first implementation example. The operations for preparing the growth substrate and growing the 2D material are also identical.

[0169] The target substrate 30 provided is another silicon wafer of 200 mm diameter.

[0170] This substrate undergoes a surface treatment which differs from that implemented in the first example.

[0171] The surface treatment here comprises cleaning of the target substrate 30 based on caro acid (obtained by a mixture of phosphoric acid H2SO4 and hydrogen peroxide H2O2 at 120°C).

[0172] Next, the target substrate 30 is rinsed with deionized water.

[0173] A SCI-based cleaning composed of a mixture of water, ammonia and hydrogen peroxide in proportions 5:1:1 at 70°C is then carried out on the rinsed target substrate.

[0174] Then, the target substrate is placed in a dip of a 10% mass HF solution for 20s. This operation makes it possible to remove the native oxide and to passivate the surface in hydrogen.

[0175] It is possible to rinse with deionized water for 10s without disturbing the hydrogen passivation.

[0176] Steps S2 and S3

[0177] The bonding S2 of the target substrate on the 2D material and the separation S3 of the growth substrate are identical to the first example.

[0178] As shown in [Fig.5], a slightly worse transfer of the 2D material is obtained, i.e. less homogeneous and over a smaller surface area, than in the first example (see [Fig.4]). However, the 2D material is transferred at more than 80%, which is satisfactory for many applications.

Claims

Claims

1. A method for producing and transferring a two-dimensional material (10), comprising the following steps: - Growing (SI) the two-dimensional material (10) on a surface (20s) of a growth substrate (20) such that the two-dimensional material (10) is bonded to the surface (20s) of the growth substrate (20) by van der Waals forces, the surface (20s) of the growth substrate having a first contact angle (#j) with a drop of a liquid (50), - Providing (SI) a target substrate (30), the target substrate (30) having a surface (30s) having a second contact angle with a drop of the liquid (50), the second contact angle (S9) being strictly greater than the first contact angle (0(); - Assembling (S2) the growth substrate (20) and the target substrate (30) by direct bonding between the two-dimensional material (10) and the surface of the target substrate (30s);and - Rupture (S3) of the interface (II) between the growth substrate (20) and the two-dimensional material (10), by applying a mechanical stress to the assembly (40) of the growth substrate and the target substrate to generate and propagate a crack front (Fa) at the interface (II) between the growth substrate (20) and the two-dimensional material (10), and by placing the assembly (40) of the growth substrate and the target substrate in an environment such that a liquid front (50) forms at the interface (II) between the growth substrate and the two-dimensional material, the mechanical stress being configured so that the crack front (Fa) is wetted by the liquid (50).;

2. Method according to claim 1, in which the difference (A 0) between the first and the second contact angle 0 ) is strictly greater than 10°, preferably greater than 30°, preferably greater than 50°.

3. A method according to one of claims 1 to 2, wherein providing the target substrate (30) comprises treating the surface (30s) of the target substrate (30) so as to increase the second contact angle (^2)-

4. Method according to one of claims 1 to 3, comprising, before the growth step (SI) of the two-dimensional material (10), a step of treating the surface (20s) of the growth substrate (20) so as to reduce the first contact angle (#i).

5. Method according to one of claims 1 to 4, in which the mechanical stress is configured to allow an advance of the crack front (Fa) at a speed less than or equal to 100 pm / s, preferably less than or equal to 10 pm / s, more preferably less than or equal to 1 pm / s.

6. Method according to one of claims 1 to 5, in which the mechanical stress is exerted by a blade (L) with a thickness (eL) less than or equal to 500 pm, preferably with a thickness (eL) less than or equal to 300 pm, more preferably less than or equal to 100 pm.

7. The method of claim 6, wherein the thickness (eL) of the blade (L) is less than or equal to 100 pm, and the blade (L) is inserted at a first speed to initiate the crack (F) and at a second speed to propagate the crack (F) in the interface (II) between the growth substrate (20) and the two-dimensional material (10), the first speed being less than or equal to 1 pm / s, and the second speed being greater than the first speed and less than or equal to 100 pm / s.

8. Method according to one of claims 1 to 7, wherein, during the step (S3) of breaking the interface (II) between the growth substrate (20) and the two-dimensional material (10), the assembly (40) of the growth substrate and the target substrate is placed in the liquid (50).

9. A method according to one of claims 1 to 8, wherein the liquid (50) is deionized water or an ionic solution.

10. Method according to one of claims 1 to 7, in which, during the step (S3) of breaking the interface (II) between the growth substrate (20) and the two-dimensional material (10), the assembly (40) of the growth substrate and the target substrate is placed in a gaseous medium comprising deionized water vapor or vapor of an ionic solution.

11. A method according to any one of claims 1 to 10, wherein the two-dimensional material (10) is graphene, hexagonal boron nitride (h-BN) or a transition metal dichalcogenide.

12. The method of any one of claims 1 to 11, wherein the surface (20s) of the growth substrate (20) and the surface (30s) of the target substrate (30) are each formed of a material selected from silicon (Si), germanium (Ge), silicon dioxide (SiO2), silicon carbide (SiC), indium phosphide (InP), gallium arsenide (AsGa) and sapphire (A12O3).

13. A method according to any one of claims 1 to 12, wherein the surface (20s) of the growth substrate (20) is formed of a base layer of silicon or germanium covered with a surface layer of a material chosen from the following materials: silicon dioxide (SiO2), silicon nitride (Si3N4), aluminum (Al), copper (Cu), titanium (Ti), alumina (A12O3), nickel (Ni), graphene.

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