Electronic component

Abstract

Electronic component The present description relates to a triac (400) formed in and on a semiconductor substrate (101), the triac comprising: – on the side of a first face (101T) of the substrate, a first region (105) doped with a first conductivity type and connected to a first conduction terminal of the triac; – on the side of a second face (101B) of the substrate opposite the first face, a second region (111) doped with the first conductivity type and connected to a second conduction terminal of the triac;and – a trigger region (121) connected to a control terminal of the triac, wherein the first and second regions have respectively first and second parallel side faces (105I, 111I), the triac comprising, between the first and second parallel side faces, a separation region (301) not covered by the first and second regions, the separation region having the shape of a strip extending along a first direction inside the trigger region and having an inflection (401) outside the trigger region. Figure for abstract: Fig. 4;

Description

Title of the invention: Electronic component Technical field

[0001] The present description relates generally to electronic components, more particularly to triacs. Prior art

[0002] Many electronic components have been proposed. Among these electronic components, triacs (from the English "triode for alternating current") have been proposed in particular.

[0003] However, existing electronic components, in particular existing triacs, are affected by various drawbacks. Summary of the invention

[0004] There is a need to overcome all or part of the disadvantages of existing electronic components, in particular triacs.

[0005] For this, one embodiment provides a triac formed in and on a semiconductor substrate, the triac comprising: - on the side of a first face of the substrate, a first region doped with a first conductivity type and connected to a first conduction terminal of the triac; - on the side of a second face of the substrate opposite the first face, a second doped region of the first conductivity type and connected to a second conduction terminal of the triac; and - a trigger region connected to a control terminal of the triac, wherein the first and second regions respectively have first and second parallel side faces, the triac comprising, between the first and second parallel side faces, a separation region not covered by the first and second regions, the separation region having the shape of a strip extending along a first direction inside the gate region and having an inflection outside the gate region.

[0006] According to one embodiment, the triac has, in top view, a substantially rectangular shape.

[0007] According to one embodiment, the first direction is inclined at an angle equal to approximately 45° relative to the sides of the rectangle formed by the triac.

[0008] According to one embodiment, the separation region has, outside the trigger region, the shape of a strip extending along a second direction substantially parallel to a diagonal of the rectangle formed by the triac.

[0009] According to one embodiment, a short-circuiting network is formed in each first and second regions, each shorting network comprising at least one through-trench extending along a third direction within the gate region and having an inflection outside the gate region.

[0010] According to one embodiment, the third direction is substantially parallel to the first direction.

[0011] According to one embodiment, outside the trigger region, each through trench extends along a fourth direction substantially parallel to a diagonal of the rectangle formed by the triac.

[0012] According to one embodiment, each short-circuiting network further comprises a plurality of through vias.

[0013] According to one embodiment, the trigger region has, in top view, a substantially square shape.

[0014] According to one embodiment, the semiconductor substrate is doped with a second conductivity type opposite to the first conductivity type, the first and second conductivity types being respectively the N type and the P type.

[0015] One embodiment provides a device comprising at least one triac as described. Brief description of the drawings

[0016] These characteristics and advantages, as well as others, will be explained in detail in the following description of particular embodiments given without limitation in relation to the attached figures among which:

[0017] [Fig.l] is a schematic and partial side and sectional view of an example of a triac according to one embodiment;

[0018] [Fig.2] is an equivalent electrical diagram of the triac of [Fig.l];

[0019] [Fig.3] is a schematic and partial top view of an example of a triac according to an embodiment;

[0020] [Fig.4] is a schematic and partial top view of another example of a triac according to one embodiment; and

[0021] [Fig.5] is a block diagram illustrating, schematically and partially, an example of a device comprising the triac of [Fig.4] according to one embodiment. Description of the embodiments

[0022] The same elements have been designated by the same references in the different figures. In particular, the structural and / or functional elements common to the different embodiments may have the same references and may have identical structural, dimensional and material properties.

[0023] For the sake of clarity, only the steps and elements useful for understanding the modes described embodiments have been shown and are detailed. In particular, the applications of the triacs have not been detailed, the described embodiments being compatible with all or most of the applications of the triacs, possibly subject to adaptations within the scope of the person skilled in the art upon reading this description.

[0024] Unless otherwise specified, when referring to two elements connected to each other, this means directly connected without intermediate elements other than conductors, and when referring to two elements connected (in English "coupled") to each other, this means that these two elements can be connected or be connected by means of one or more other elements.

[0025] In the following description, when reference is made to absolute position qualifiers, such as the terms "front", "back", "top", "bottom", "left", "right", etc., or relative position qualifiers, such as the terms "above", "below", "upper", "lower", etc., or to orientation qualifiers, such as the terms "horizontal", "vertical", etc., reference is made, unless otherwise specified, to the orientation of the figures.

[0026] Unless otherwise specified, the expressions “about”, “approximately”, “substantially”, and “of the order of” mean to within 10%, preferably to within 5%, or, if they are angular values, to within 10°, preferably to within 5°.

[0027] In the following description, the terms “insulator” and “conductor” mean respectively, unless otherwise specified, electrically insulating and electrically conductive.

[0028] [Fig. 1] is a schematic and partial side and sectional view of an example of a triac (from the English “triode for alternating current”) 100 according to one embodiment.

[0029] In the example shown, the triac 100 is formed in and on a semiconductor substrate 101. The substrate 101 is for example a wafer or a piece of wafer made of a semiconductor material, for example silicon.

[0030] In the illustrated example, the triac 100 comprises a semiconductor region 103 (PI) doped with a first conductivity type, for example the P type, formed in the semiconductor substrate 101. In this example, the region 103 extends into the thickness of the semiconductor substrate 101 from a face 101T of the semiconductor substrate 101 (the upper face of the semiconductor substrate 101, in the orientation of [Fig.l]).

[0031] In the example shown, the triac 100 further comprises, on the side of the face 101T of the semiconductor substrate 101, a semiconductor region 105 (NI) doped with a second conductivity type opposite to the first conductivity type, i.e. doped with the N type, in this example. The region 105 is formed in the region 103 and extends in the thickness of the semiconductor substrate 101 from its face 101T to a depth less than that of region 103. In the illustrated example, region 105 is thus at least partially surrounded, or bordered, by region 103. In the orientation of [Fig.l], the material of region 103 covers at least certain side faces and a lower face, or a bottom, of region 105.

[0032] In the illustrated example, the triac 100 further comprises another semiconductor region 107 (N2) doped with the second conductivity type, i.e. doped with the N type, in this example. In this example, the region 107 is located on the side of a face of the region 103 opposite the face 101T of the semiconductor substrate 101 (on the side of the lower face of the region 103, in the orientation of [Fig.l]). In the example shown, the region 107 is located under and in contact with the region 103.

[0033] In the example shown, the triac 100 further comprises another semiconductor region 109 (P2) doped with the first conductivity type, i.e. doped with the P type, in this example. In this example, the region 109 is located on the side of a face of the region 107 opposite to the region 103 (on the side of the lower face of the region 107, in the orientation of [Fig. 1]). In the example shown, the region 109 is located under and in contact with the region 107. In the example illustrated, the region 109 extends vertically in the thickness of the semiconductor substrate 101 from another face 101B of the semiconductor substrate 101 opposite to the face 101T (the lower face of the semiconductor substrate 101, in the orientation of [Fig. 1]).

[0034] In the example shown, the triac 100 further comprises, on the side of the face 101B of the semiconductor substrate 101, yet another semiconductor region 111 (N3) doped with the second conductivity type, i.e. doped with the N type, in this example. The region 111 is formed in the region 109 and extends in the thickness of the semiconductor substrate 101 from its face 101B to a depth less than that of the region 109. In the example shown, the region 111 is thus at least partially surrounded, or bordered, by the region 109. In the orientation of [Fig.l], the material of the region 109 covers at least certain lateral faces and an upper face of the region 111. In the example shown, the region 111 is not located directly above the region 105.

[0035] In the illustrated example, the triac 100 further comprises yet another semiconductor region 113 (N4) doped with the second conductivity type, i.e. doped with the N type, in this example. The region 113 is formed in the region 103 and extends in the thickness of the semiconductor substrate 101 from its face 101T to a depth less than that of the region 103. The region 113 is separate from the region 105 and has, for example, a height, or depth, substantially equal to that of the region 105. In the illustrated example, the region 113 is thus at least partially surrounded, or bordered, by the region 103. In the orientation of [Fig.l], the material of the region 103 covers all the lateral faces and a lower face, or a bottom, of the region 113. In the example shown, region 113 is located directly above region 111. However, this example is not limiting and region 113 may, as a variant, be located outside of region 111.

[0036] By way of example, the semiconductor substrate 101 is doped with the first conductivity type, i.e., the P type, in this example, and the regions 105, 107, 111 and 113 are formed by diffusion, in the semiconductor substrate 101, of doping species of the second conductivity type, i.e., the N type, in this example.

[0037] In the example shown, the triac 100 comprises a first conduction terminal, also called the first anode (Al), connected to the regions 103 and 105. In this example, the conduction terminal Al comprises an electrode 115-1 extending laterally on and in contact with a portion of the face of the region 103 flush with the face 101T of the semiconductor substrate 101 (the upper face of the region 103, in the orientation of [Fig.l]). The conduction terminal Al comprises, for example, in addition another electrode 115-2 extending laterally on and in contact with a portion of the face of the region 105 flush with the face 101T of the semiconductor substrate 101 (the upper face of the region 105, in the orientation of [Fig.l]). The electrodes 115-1 and 115-2 are for example disjointed and electrically interconnected by an external circuit. Alternatively, the electrodes 115-1 and 115-2 may form a single electrode.

[0038] In the illustrated example, the triac 100 further comprises a second conduction terminal, also called the second anode (A2), connected to the regions 109 and 111. In this example, the conduction terminal A2 comprises an electrode 117 extending laterally over and in contact with a portion of the face of the region 109 flush with the face 101B of the semiconductor substrate 101 (the lower face of the region 109, in the orientation of [Fig. 1]). The electrode 117 further extends over and in contact with a portion of the face of the region 111 flush with the face 101B of the semiconductor substrate 101 (the lower face of the region 111, in the orientation of [Fig. 1]).

[0039] In the example shown, the triac 100 further comprises a gate terminal (G) connected to the regions 103 and 113. In this example, the gate terminal G comprises an electrode 119 extending laterally over and in contact with a portion of the face of the region 103 flush with the face 101T of the semiconductor substrate 101 (the upper face of the region 103, in the orientation of [Fig. 1]). The electrode 119 further extends over and in contact with a portion of the face of the region 113 flush with the face 101T of the semiconductor substrate 101 (the upper face of the region 113, in the orientation of [Fig. 1]).

[0040] For example, the electrodes 115-1, 115-2, 117 and 119 are each made of a conductive material, for example a metal or a metal alloy. Furthermore, each electrode 115-1, 115-2, 117, 119 may have a single-layer structure or multi-layer.

[0041] In the example shown, the triac 100 comprises a trigger region 121 symbolized by a dotted line rectangle in [Fig.l]. The trigger region 121 of the triac 100 extends in the semiconductor substrate 101 substantially directly above the electrode 119 of the trigger terminal G, under the region 113. In the example shown, the trigger region 121 does not extend laterally under the electrodes 115-1 and 115-2 of the conduction terminal A1.

[0042] [Fig.2] is an equivalent electrical diagram of the triac 100 of [Fig.l].

[0043] In the example shown, the triac 100 is symbolized by two thyristors Thl and Th2 mounted head to tail in parallel between the conduction terminals A1 and A2. In the diagram of [Fig.2], the thyristors Thl and Th2 have trigger terminals connected, by the trigger region 121, to the trigger terminal G.

[0044] The thyristor Thl comprises, for example, a stack comprising parts of the layers 103, 107, 109 and 111 located substantially directly above the electrode 115-1 (to the right of the gate region 121, in the orientation of [Fig. 1]). The electrodes 115-1 and 117 constitute, for example, respectively anode and cathode electrodes of the thyristor Thl.

[0045] Similarly, the thyristor Th2 comprises for example a stack comprising parts of the layers 105, 103, 107 and 109 located substantially directly above the electrode 115-2 (to the left of the gate region 121, in the orientation of [Fig. 1]). The electrodes 115-2 and 117 constitute for example respectively cathode and anode electrodes of the thyristor Th2.

[0046] In the example illustrated in [Fig. 2], a voltage VT is present between the conduction terminals A2 and A1 of the triac 100. The voltage VT is for example applied by an external electrical energy source to the triac 100, not shown in [Fig. 2]. Furthermore, in this example, a control or trigger current IG flows from the trigger terminal G to the trigger region 121.

[0047] When the control current IG is substantially zero, the triac 100 is in a blocked state preventing the flow of a current IT between its conduction terminals A2 and AL.

[0048] From the off state, when the control current IG becomes greater, in absolute value, than a trigger threshold IGT (gate threshold current), for example under the effect of the application of a control current pulse IG, the triac 100 then switches to an on state. In the on state, the current IT is free to flow between the conduction terminals A2 and AL. When the control current IG becomes lower than the trigger threshold IGT again, for example at the end of the control current pulse IG, the triac 100 remains in the on state as long as the current IT remains, in absolute value, greater than a latching threshold IL (latching threshold). current”, in English) of the triac 100. In particular, if the control current pulse IG has a sufficient duration to allow the triac 100 to complete the switching to the on state, for example a duration of the order of a few tens of microseconds, the locking threshold IL then has a minimum value corresponding to a holding threshold IH (“holding current”, in English). The holding threshold IH corresponds to the minimum value of the current IT required to maintain the triac 100 in the on state.

[0049] When the current IT becomes lower, in absolute value, than the holding threshold IH, the triac 100 then switches from the on state to the off state.

[0050] In practice, the trigger thresholds IGT, locking IL and holding IH can, in absolute value, take distinct values ​​depending on whether the control current IG is positive or negative, and / or depending on whether the voltage VT is positive or negative.

[0051] The triac 100 has a sensitivity depending on the value of its IGT trigger threshold. The lower the value of the IGT trigger threshold, the more sensitive the triac 100 is said to be.

[0052] The electrical performance of the triac 100 further depends on various other parameters, designated by the expressions dv / dt, di / dt, (di / dt)c, etc. These parameters are strongly linked to the characteristics, in particular the geometry and dimensions, of the trigger region 121. In other words, slight modifications of the trigger region 121 cause significant modifications of the electrical performance of the triac 100.

[0053] [Fig.3] is a schematic and partial top view of the triac 100. In In the example shown, the triac 100 has a generally substantially square shape. For example, the square formed by the triac 100 has a side of the order of a few millimeters, for example equal to approximately 2 or 3 mm. The triac 100 is for example capable of supporting, in the on state, a nominal current of the order of 16 to 20 A.

[0054] In the illustrated example, the semiconductor region 105 and the semiconductor region 111 have, in top view, substantially equal surfaces. This makes it possible in particular to ensure that the thyristors Thl and Th2 have substantially identical electrical characteristics.

[0055] Furthermore, in this example, regions 105 and 111 do not overlap, that is to say that region 105 does not extend laterally in line with region 111. This makes it possible in particular to ensure that thyristors Thl and Th2 can be controlled independently of one another.

[0056] By way of example, each region 105, 111 has a surface area equal to approximately half of a surface area corresponding to the total surface area of ​​the triac 100 minus the surface area of ​​the region 113. In the example shown where the triac 100 has a general shape square, regions 105 and 111 for example each have a generally triangular shape.

[0057] In the example shown, the trigger region 121, symbolized in [Fig. 3] by a dotted square surrounding the semiconductor region 113, is located in the vicinity of a first corner of the square formed by the triac 100 (the lower right corner, in the orientation of [Fig. 3]). The trigger region 121 comprises the region 113 and parts of the regions 105 and 111 located in the vicinity of the first corner.

[0058] In the illustrated example, regions 105 and 111 have parallel lateral faces 1051 and 1111 respectively. Faces 1051 and 1111 are for example substantially vertical. In this example, triac 100 comprises, between parallel lateral faces 1051 and 1111, a separation region 301 not covered by regions 105 and 111. In other words, region 301 does not extend directly above regions 105 and 111.

[0059] In the illustrated example, the separation region 301 has the shape of a substantially rectilinear strip extending along a direction substantially parallel to a diagonal of the square formed by the triac 100. In the example shown, the separation region 301 extends more precisely along a diagonal of the square formed by the triac 100 connecting the first corner to a second corner of the square, diagonally opposite the first corner. In this example, the lateral faces 1051 and 1111 of the regions 105 and 111 are, in top view, inclined at an angle equal to approximately 45° relative to the sides of the square formed by the triac 100, the direction in which the separation region 301 extends being inclined at an angle equal to approximately 45° relative to the sides of the square.

[0060] In the example illustrated, a short-circuiting network 303 is formed in each of the regions 105, 111. By way of example, each network 303 comprises at least one trench 305 formed in the region 105 or 111. In the example shown, each trench 305 is a through trench, that is to say it extends through the entire thickness of the region 105, 111 in which it is formed.

[0061] In the example shown, the region 105 comprises a trench 305 extending laterally along a direction substantially parallel to the side 1051 of the region 105. Similarly, the region 111 comprises, in this example, a trench 305 extending laterally along a direction substantially parallel to the side 11II of the region 111. In the example illustrated, each trench 305 is substantially rectilinear over its entire length. In the example shown, each trench 305 extends along a direction inclined at an angle equal to approximately 45° relative to the sides of the square formed by the triac 100. Each trench 305 may, as in the example illustrated in [Fig.3], open onto a side of the region 105 or 111 different from the side 1051 or 11II, for example in the vicinity of the second corner of the square formed by the triac 100.

[0062] Each network 303 further comprises, for example, vias 307 formed in the region 105 or 111. In the example shown, each via 307 is through, that is to say that it extends through the entire thickness of the region 105, 111 in which it is formed. In the illustrated example, the vias 307 are organized in a matrix according to rows and columns, for example with a constant pitch, that is to say with a constant center-to-center distance between two adjacent vias 307. The vias 307 can have a cross-section of any shape, for example rectangular, oval, square, circular, etc.

[0063] In the example shown, each trench 305 and each via 307 is filled with the material of region 103, for the trench(es) 305 and the via(s) 307 formed in region 105, or with the material of region 109, for the trench(es) 305 and the via(s) 307 formed in region 111.

[0064] [Fig.4] is a top view, schematic and partial, of another example of triac 400 according to one embodiment.

[0065] The triac 400 of [Fig.4] includes elements in common with the triac 100 of [Fig.3]. These common elements will not be detailed again below.

[0066] The triac 400 of [Fig. 4] differs from the triac 100 of [Fig. 3] in that, according to one embodiment, the separation region 301 of the triac 400 has an inflection 401 outside the gate region 121. According to this embodiment, the separation region 301 of the triac 400 has the shape of a strip extending along a first direction, inside the gate region 121, and extending in a second direction, not collinear with the first direction, outside the gate region 121.

[0067] In the example shown, the triac 400 has a substantially rectangular general shape. In this example, the first direction is inclined at an angle substantially equal to 45° relative to the sides of the rectangle formed by the triac 400, and the second direction is substantially parallel to a diagonal of the rectangle formed by the triac 400. In the example illustrated, the second direction is substantially parallel to the diagonal connecting a first corner of the rectangle formed by the triac 400, in the vicinity of which the region 113 is located, to a second corner diagonally opposite the first corner.

[0068] Furthermore, in this example, the trenches 305 formed in the regions 105 and 111 extend along a third direction, inside the trigger region 121, and having an inflection 403 outside the trigger region 121. In the illustrated example, the trenches 305 extend along a fourth direction, not collinear with the third direction, outside the trigger region 121. The third and fourth directions are for example respectively parallel to the first and second directions. In the example shown, the third direction is inclined at an angle substantially equal to 45° relative to the sides of the rectangle formed by the triac 400, and the fourth direction is substantially parallel to the diagonal connecting the first and second corners of the rectangle formed by the triac 400.

[0069] An advantage of the triac 400 lies in the fact that the inflection 401 makes it possible not to modify the structure of the trigger region 121 with respect to the triac 100. The triac 400 thus has, for example, electrical characteristics identical or similar to those of the triac 100. For example, the triac 400 has a trigger threshold IGT, a latching threshold IL, and a holding threshold IH substantially equal to those of the triac 100. The triac 400 also has, for example, dynamic performances, characterized by the parameters dv / dt, di / dt, (di / dt)c, etc., substantially equal to those of the triac 100. From the point of view of the electrical characteristics, the triac 400 differs, for example, from the triac 100 in that the triac 400 has a higher caliber than that of the triac 100, the triac 400 being, in this case, capable of supporting a nominal current higher than the 100 triac.

[0070] The inflection 401 also advantageously makes it possible to retain semiconductor regions 105 and 111 having substantially equal surfaces, therefore thyristors Thl and Th2 having substantially identical electrical characteristics.

[0071] [Fig.5] is a block diagram illustrating, schematically and partially, an example of a device 500 (DEV) comprising the triac 400 of [Fig.4] according to one embodiment.

[0072] In the example shown, the device 500 comprises an electrical energy source 501 (PWR). The electrical energy source 501 is for example obtained by connecting, or hooking up, the device 500 to an electrical energy distribution network, for example a single-phase or three-phase alternating current distribution network. As a variant, the electrical energy source 501 may be a battery embedded in the device 500, the source 501 then providing for example a direct current. In this case, the current provided by the source 501 is for example converted into alternating current by an inverter (not shown in [Fig. 5]).

[0073] In the example illustrated, the device 500 further comprises a control circuit 503 (CTRL) comprising the triac 400. Although only one triac 400 has been symbolized in [Fig. 5], the control circuit 503 can of course comprise at least one other triac similar or identical to the triac 400. In the example shown, the control circuit 503 is linked or connected to the electrical energy source 501. In practice, the triac 400 is for example packaged and soldered to a printed circuit board of the control circuit 503.

[0074] The device 500 further comprises, for example, a load 505 (LOAD) connected to the control circuit 503. The load 505 may correspond to any type of element known as a receiver or consumer of electrical energy. For example, the load 505 is a rotating machine, for example an electric motor, a heating resistor, etc.

[0075] The control circuit 503 is for example intended to control the power supply electrical power of the load 505 from the electrical energy source 501. For example, depending on the needs of a user of the device 500, the control circuit 503 is intended to authorize or block the supply of electrical power to the load 505 by the source 501.

[0076] As an example, the triac 400 is used in applications: - lighting control, for example for controlling the brightness of incandescent lamps or dimmable light-emitting diodes (LEDs), for example in the field of public lighting, stage lighting, and other types of commercial lighting systems; - heating control, for example to control the temperature of radiators, ovens and other heating systems; - motor control, for example for controlling the speed of AC motors in various industrial applications; - power supply, for example for controlling output voltages and currents of alternating current power supply systems; - in the medical field, the triac 400 being for example integrated into medical equipment such as electrocautery devices and defibrillators; and - in the field of home automation, the triac 400 being for example integrated into home automation systems to control various devices such as air conditioners, fans and refrigerators.

[0077] An advantage of the triac 400 lies in the fact that it can be used as a replacement for the triac 100 without modifying the electrical characteristics of its trigger region 121. This makes it possible, for example, to provide several variants of the device 500 depending on the electrical power of the load 505 to be supplied, for example a so-called “low power” version in which the control circuit 503 uses the triac 100 and a so-called “high power” version in which the control circuit 503 uses the triac 400, without modifying the other elements of the control circuit 503.

[0078] The device 500 may further comprise other elements and / or circuits symbolized, in [Fig.5], by a single functional block 507 (FCT).

[0079] Various embodiments and variations have been described. Those skilled in the art will understand that certain features of these various embodiments and variations could be combined, and other variations will occur to those skilled in the art. In particular, although [Fig. 4] takes as an example a case in which the triac 400 has a generally rectangular shape, the embodiments are not limited to this case and apply more generally to any shape of triac, for example oval, circular, hexagonal, octagonal, etc.

[0080] Finally, the practical implementation of the described embodiments and variants is within the reach of those skilled in the art from the functional indications given above. In particular, the described embodiments are not limited to the particular examples of materials and dimensions mentioned in the present description.

Claims

Claims

1. Triac (400) formed in and on a semiconductor substrate (101), the triac comprising: - on the side of a first face (101T) of the substrate, a first region (105) doped with a first conductivity type and connected to a first conduction terminal (Al) of the triac; - on the side of a second face (101B) of the substrate opposite the first face, a second region (111) doped with the first conductivity type and connected to a second conduction terminal (A2) of the triac;and - a trigger region (121) connected to a control terminal (G) of the triac, wherein the first and second regions respectively have first and second parallel side faces (1051, 1111), the triac comprising, between the first and second parallel side faces, a separation region (301) not covered by the first and second regions, the separation region having the shape of a strip extending along a first direction inside the trigger region and having an inflection (401) outside the trigger region.;

2. Triac (400) according to claim 1, the triac having, in top view, a substantially rectangular shape.

3. The triac (400) of claim 2, wherein the first direction is inclined at an angle equal to about 45° relative to the sides of the rectangle formed by the triac.

4. Triac (400) according to claim 2 or 3, wherein the separation region (301) has, outside the gate region (121), the shape of a strip extending along a second direction substantially parallel to a diagonal of the rectangle formed by the triac.

5. The triac (400) of claim 2, 3 or 4, wherein a shorting network (303) is formed in each of the first and second regions (105, 111), each shorting network comprising at least one through-trench (305) extending along a third direction within the gate region (121) and having an inflection (403) outside the gate region.

6. The triac (400) of claim 5, wherein the third direction is substantially parallel to the first direction.

7. A triac (400) according to claim 5 or 6, wherein, outside the

8.

9.

10.

11. trigger region (121), each through trench (305) extends along a fourth direction substantially parallel to a diagonal of the rectangle formed by the triac. The triac (400) of claim 5, 6 or 7, wherein each shorting network (303) further comprises a plurality of through vias (307). Triac (400) according to any one of claims 1 to 8, wherein the trigger region (121) has, in top view, a substantially square shape. Triac (400) according to any one of claims 1 to 9, wherein the semiconductor substrate (101) is doped with a second conductivity type opposite to the first conductivity type, the first and second conductivity types being N-type and P-type respectively. Device (500) comprising at least one triac (400) according to any one of claims 1 to 10.

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