Image display device

Abstract

The invention relates to an image display device comprising an array of extraction structures and sets of waveguides and addressing electrodes extending respectively along axes xi and ya, ya making an angle β with an axis yi orthogonal to xi. Each extraction structure includes an intermediate liquid crystal waveguide arranged between an addressing electrode and a common electrode so as to switch its refractive index from a first level to a second level. An entrance face of the intermediate waveguide makes an angle γ greater than 30 degrees with the substrate and an angle equal to β with the axis yi. In operation, a mode of the addressing waveguide is coupled to the intermediate waveguide only when the liquid crystal refractive index is equal to the second level to extract a beam corresponding to the display of a pixel, after total internal reflection on the entrance face of the adjacent extraction structure. Figure 1B for the abstract.

Description

Title of the invention: Image display device technical field

[0001] The field of the invention is that of image display devices, such as micro-screens which can for example be used for extended reality applications (augmented reality, virtual reality or mixed reality). PREVIOUS STATE OF THE ART

[0002] Display devices such as microdisplays are used in numerous applications. For example, they are used in video projectors, extended reality glasses, virtual reality headsets, or to display information in viewfinders for cameras, binoculars, or video cameras. Among the many parameters characterizing the performance level of a microdisplay, power consumption, resolution, and compactness are particularly important. The overall compactness of the systems incorporating them is generally of interest.

[0003] The document C. Martinez et al., “See-through holography retinal projection display concept,” Optica, vol. 5, no. 10, p. 1200, Oct. 2018, doi: 10.1364 / OPTICA.5.001200, describes a particularly compact augmented reality system incorporating a microdisplay that exploits a self-focusing effect. This type of microdisplay eliminates the need for an optical system to project an image into a user's eye and can therefore be integrated into less complex, less bulky, and lighter augmented reality systems.

[0004] In general terms, a pixel on such a screen results from the combination of several coherent light waves emanating from a distribution of emission points. The light is brought to the emission points by an array of integrated waveguides, optically connected to a light source. Each emission point has an active extraction structure that allows light to be extracted on command from a corresponding waveguide. A holographic film placed on the active extraction structures allows the phase and direction of the light extracted by the structures to be adjusted. The emission points can, for example, emit light waves having the same phase modulo 2ir and propagating around parallel principal axes. In this case, the observer's eye sees a sharp point corresponding to a virtual pixel located at infinity.A control circuit connected to the light source and an electrode array allows the light source and the extraction structures corresponding to the pixel to be activated simultaneously.

[0005] Similar to the microscreen whose operation has just been briefly described, other guided light distribution microscreens exist, comprising emission points optically coupled to one or more light sources by an integrated waveguide array. They are generally advantageous due to their compact size, particularly for use in so-called "near-eye" optical systems, such as augmented reality glasses. However, it is necessary to reduce their energy consumption. To achieve this, it is desirable, for example, to increase the directivity of the light extracted at each emission point, so as not to lose luminous flux between the microscreen and the user's eye.

[0006] Guided light distribution microdisplays frequently incorporate diffraction gratings to extract light at the emission points. However, these gratings generally diffract the light into one or more superfluous diffraction orders, resulting in optical losses and possibly one or more spurious images. Furthermore, light can only be extracted efficiently, without energy loss, over a large length of the diffraction grating, which negatively impacts the compactness or resolution of the microdisplay. Description of the invention

[0007] The invention aims to remedy at least in part the disadvantages of the prior art, and more particularly to propose a compact image display device, consuming less electrical energy than the display devices of the prior art.

[0008] To this end, the object of the invention is a display device for an image consisting of a set of pixels, comprising a substrate equipped with an orthogonal coordinate system and including a top face; a lighting module; a common electrode; a set of addressing waveguides optically coupled to the lighting module, extending parallel to an axis oriented xa, parallel to xi; a set of addressing electrodes extending parallel to an axis oriented ya, making an angle [3] with the axis yi; and a matrix of light extraction structures. The display device is such that the common electrode, the matrix of extraction structures, the set of addressing waveguides, and the set of addressing electrodes extend successively from the top face, in distinct planes parallel to the top face.

[0009] Each matrix extraction structure is arranged at an intersection of an addressing waveguide and an addressing electrode, and comprises an intermediate waveguide made of a liquid crystal extending parallel to the upper face from an inlet face of the intermediate waveguide to an outlet face of the intermediate waveguide, the intermediate waveguide being arranged between the addressing electrode and the common electrode so as to flip a refractive index of the liquid crystal along a polarization direction, from a first level to a second level strictly higher than the first level, when a variation of an electrical potential difference is applied between the addressing electrode and the common electrode, and the inlet face making an angle y with the top face of the substrate greater than or equal to 30 degrees and an angle equal to the angle [3 with the axis yi; a high index region extending from the output face of the intermediate waveguide, to the inlet face of an adjacent extraction structure of the extraction structure matrix, the high index region having a refractive index np strictly higher than the first level.

[0010] The display device is configured so that for each extraction structure the first level, the second level and the arrangement of the intermediate waveguide with respect to the addressing waveguide are such that an optical mode from the lighting module and guided in the addressing waveguide is coupled at least in part, by evanescent coupling of the addressing waveguide to the intermediate waveguide, only when the refractive index of the liquid crystal is equal to the second level so as to generate an emitted beam propagating in the high index region from the output face to the input face of the adjacent extraction structure;and the angle [3 is greater than or equal to a strictly positive minimum inclination angle beyond which the emitted beam is reflected by total internal reflection on the input face of the adjacent extraction structure into a reflected beam, to be extracted from the display device into a pixel beam corresponding to the display of a pixel of the image. ;

[0011] Some preferred but not limiting aspects of this image display device are the following.

[0012] Each addressing waveguide of the assembly may have a straight portion; the straight portions may form a periodic array of period p along the yi axis; the addressing electrodes may intersect the addressing waveguides at the straight portions; the matrix of light extraction structures may be periodic of period Lc along the xa axis; and in which Lc is strictly greater than p.

[0013] Lc can be such that for each extraction structure, the intensity of the emitted beam can be greater than or equal to 80% of the intensity of the optical mode.

[0014] The angle [3] can be equal to arccos

[0015] The difference between np and the second level can be less than or equal to 0.05 in absolute value.

[0016] For each addressing electrode, the intermediate waveguides of the extraction structures located at the intersections between the addressing electrode and the addressing waveguides of the assembly can be portions of a common planar waveguide.

[0017] The display device may further comprise a transparent hood with an optical index nv strictly less than np. Each matrix extraction structure may further comprise a hologram opposite the entrance face of the adjacent extraction structure, configured to deflect the reflected beam so as to reduce the propagation angle of the reflected beam within the hood relative to a normal to a principal plane of the hood. Each hologram may be housed within the hood or on a face of the hood opposite the high-index region.

[0018] The hologram may be a reflected hologram.

[0019] The angle y can be less than or equal to 45 degrees.

[0020] The addressing waveguides may each include a separate optical modulator, arranged between the lighting module and the matrix of light extraction structures.

[0021] The image can be divided into several contiguous display areas, each of which can correspond to a set of adjacent addressing waveguides, optically coupled to a light source separate from the lighting module.

[0022] The display device may further include an addressing circuit electrically connected to the addressing electrode assembly. The addressing electrode assembly may be divided into contiguous addressing zones, each of which may consist of a group of adjacent addressing electrodes. The addressing circuit may be configured to sequentially bias, one at a time, the addressing electrodes of each addressing zone so as to switch the refractive index of the liquid crystal of the corresponding intermediate waveguides to the second level.

[0023] The addressing zones can all include the same number of addressing electrodes.

[0024] The addressing circuit can be configured to simultaneously bias one addressing electrode of each addressing zone.

[0025] The addressing electrodes can be arranged in such a way that each pair of simultaneously polarized addressing electrodes belonging to contiguous addressing areas activates two matrix extraction structures located at two opposite ends of the extraction structure matrix and opposite two adjacent addressing waveguides.

[0026] The addressing circuit can polarize the addressing electrodes one by one in the same sequence in all addressing areas.

[0027] The display device may further include an image conversion circuit configured to convert a standard image consisting of an orthogonal matrix of pixels into the image to be displayed by the display device.

[0028] The image to be displayed and the standard image can have the same number of pixels to within 10%, and the same aspect ratio to within 10%.

[0029] The invention also relates to a display system comprising a first and a second image display device, each according to any one of the preceding characteristics. The first and second image display devices can be arranged one above the other such that pixel beams from the first display device pass through the addressing structure matrix of the second display device.

[0030] The optical modes originating respectively from the lighting modules of the first and second display devices may have different wavelengths.

[0031] The display system can be configured to display a color image and the extraction structure matrices of the first and second display devices can be arranged relative to each other so that the pixel sets of the images to be displayed by the first and second display devices are color sub-pixels of the color image.

[0032] The respective addressing waveguide sets of the first and second display devices can be interleaved in a display plane of the display system, parallel to the top face of the substrate, and each addressing electrode of the first display device can be an addressing electrode of the second display device.

[0033] The output faces of the intermediate waveguides of the first and second display devices can make an angle with the top face of the substrate equal to y, and an angle with the axis yi equal to [3.

[0034] Each common planar waveguide of the first display device can be a common planar waveguide of the second display device.

[0035] The invention also relates to a method for manufacturing an image display device according to any one of the preceding characteristics, comprising providing a lower part of the display device including the addressing waveguide assembly; providing a cover; forming a structured layer on the lower part or the cover, by a nanoimprint lithography process, such that the structured layer has raised parts of identical heights, equal to a common height; forming an adhesive bead on the lower part or on the cover, such that the adhesive bead has a thickness greater than or equal to the common height, delimits a central region, and includes a through-side opening communicating with the central region; a transfer of the hood on the lower part so that the structured layer acts as a spacer fixing a gap between the hood and the lower part, and delimits continuous volumes in the central region; bonding of the hood to the lower part by the glue bead; introduction of a liquid crystal into each continuous volume through the through-side opening to obtain the intermediate waveguide of each extraction structure.

[0036] The nano-imprint lithography process may include a substep for forming a reference mold that may comprise one or more of the following tasks: supplying a crystalline silicon master substrate, anisotropic wet etching of trenches in the master substrate from a top face of the master substrate so as to make a face, referred to as a face of interest, of each trench coincide with a predetermined crystal plane of the silicon. The nano-imprint lithography process may include a substep for forming a pad by molding onto the reference mold, and / or a substep for forming the structured layer by molding a film with the pad so that faces of the pad corresponding to faces of interest form the entry faces of the matrix extraction structures.

[0037] The pad can be flexible, the film can be a UV adhesive and the formation of the structured layer can implement UV illumination of the UV adhesive before removal of the pad.

[0038] The UV adhesive may have a refractive index equal to np, and the difference between np and the second level may be less than or equal to 0.05 in absolute value.

[0039] The manufacturing process may further include a step of forming a hologram matrix which may include one or more of the following substeps: supplying a support plate and a holographic film on a contact face of the support plate, transferring a plate with flat and parallel faces onto the holographic film, transferring a prism onto a face of the plate opposite the holographic film, repeating a sequence which may include illuminating an area of ​​the holographic film with a reference beam making a predetermined angle of incidence with an entrance face of the prism and an object beam, coherent with the reference beam, making an angle, called the display angle, with a normal to the contact face, the angle of incidence being predetermined so that the reference beam makes an angle with the contact face equal to an angle of the reflected beam from each extraction structure with the upper face of the substrate.The sequence may also include a relative displacement of the prism by one step of the hologram matrix. The manufacturing process may further include a step of transferring the holographic film onto the display device so as to position each hologram opposite an input face of an extraction structure.

[0040] The display angle may vary from one iteration of the sequence to another.

[0041] The master substrate can have an orientation and the predetermined crystal plane can be a (111) or (110) plane.

[0042] The master substrate can be a silicon-on-insulator type plate. Brief description of the drawings

[0043] Other aspects, objects, advantages and features of the invention will become more apparent upon reading the following detailed description of preferred embodiments thereof, given by way of non-limiting example, and made with reference to the accompanying drawings in which:

[0044] [Fig.1A] is a schematic top view of an example of a display device according to the invention, on which only certain elements have been represented;

[0045] [Fig.1B] is a schematic top view of the example display device, on which elements have been added compared to [Fig.1A];

[0046] [Fig.2A] is a schematic cross-sectional view of detail A of [Fig.1B], according to a first possibility;

[0047] [Fig.2B] is a detail of [Fig.2A];

[0048] [Fig.2C] is a schematic perspective view of certain elements of detail A beyond [Fig.1B];

[0049] [Fig.3] is a schematic cross-sectional view of detail A of [Fig.1B], according to a second possibility;

[0050] [Fig.4] is an optical diagram allowing the introduction of angles useful for understanding the invention;

[0051] [Fig.5A] is a first angular correspondence graph between angles exploited by the example display device;

[0052] [Fig.5B] is a second angular correspondence graph between angles exploited by the example display device;

[0053] [Fig.5C] is a third angular correspondence graph between angles exploited by the example display device;

[0054] [Fig.6] is a schematic top view of the example display device in operation;

[0055] the [Fig.7] are details of a standard image and of an image displayed by the example display device from the standard image;

[0056] [Fig.8A] is a schematic top view of an example of a display system comprising two display devices according to the invention;

[0057] [Fig.8B] is a schematic top view of detail B of [Fig.8A];

[0058] [Fig.8C] is a schematic top view of detail C of [Fig.8A];

[0059] Figures 9A to 9E are schematic cross-sectional views of a first manufacturing process for a reference mold and a buffer specially designed for the implementation of a process for producing the example display device;

[0060] Figures 10A to 10C are schematic cross-sectional views of steps in a manufacturing process for an upper part of the example display device;

[0061] [Fig.1 1] is a schematic cross-sectional view of a manufacturing process for a hologram matrix specially designed for implementing the process for realizing the example display device;

[0062] Figures 12A to 12C are schematic cross-sectional views of steps in the manufacturing process of the example display device;

[0063] Figures 13A to 13D are schematic cross-sectional views of a second manufacturing process for the reference mold and the buffer specially designed for implementing the process for making the example display device.

[0064] DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

[0065] In the figures and throughout the description, the same reference numerals represent identical or similar elements. Furthermore, the various elements are not drawn to scale in order to enhance the clarity of the figures. Moreover, the different embodiments and variants are not mutually exclusive and may be combined. Unless otherwise indicated, the terms "approximately," "about," and "in the order of" mean within 10%, and preferably within 5%. Furthermore, the terms "between ... and ..." and equivalents mean that the limits are inclusive, unless otherwise stated.

[0066] The invention relates to an image display device. It comprises a lighting module, an array of addressing waveguides, an array of addressing electrodes, and an array of extraction structures. Each intersection of an addressing waveguide with an addressing electrode includes an extraction structure from the array. Each addressing waveguide is optically coupled to the lighting module. The addressing waveguides and the addressing electrodes extend parallel to a top surface of a substrate.

[0067] Each extraction structure includes an intermediate waveguide extending from an inlet face to an outlet face. During operation, an electrical potential applied to the corresponding addressing electrode acts on the intermediate waveguide, increasing its refractive index to a second level. This allows optical coupling of an optical mode guided by the addressing waveguide opposite the extraction structure with an optical mode of the intermediate waveguide, which is emitted as a beam from the outlet face. The inlet faces of all intermediate waveguides are oriented such that each beam emitted from one extraction structure is reflected into a reflected beam on the inlet face of the next extraction structure.

[0068] The orientation is determined by an angle y that the inlet face makes with the upper face of the substrate and an angle [3] that the optical axis of the addressing waveguide 115.j makes with the normal to the inlet face in a cutting plane parallel to the upper face. The addressing electrodes must be oriented at an angle equal to ir / 2 + [3] with respect to the optical axes of the addressing waveguides in order to act on the intermediate waveguides.

[0069] To achieve total internal reflection at the input face, the emitted beam propagates in a high-index region. The refractive index of the high-index region is close to the second level to limit unwanted reflection at the output face, and strictly greater than the refractive index of the intermediate waveguide in the absence of interaction with an addressing electrode. Under these conditions, it is possible both to obtain total internal reflection at the input face and to extract the reflected beam from the display device when the angle y is greater than or equal to 30 degrees and the angle [3] is adjusted to a strictly positive value inducing total internal reflection at the input face.

[0070] Advantageously, the display device comprises a hologram matrix corresponding to the extraction structure matrix. Each hologram is placed opposite an input face of the extraction structure matrix.

[0071] The display device equipped with a hologram matrix is, for example, a directional microdisplay in which each pixel is configured to emit a directional and diverging pixel beam propagating along a predefined extraction axis. The pixel beam propagates at a divergence angle with respect to the extraction axis. The divergence angle is predetermined, preferably less than 45° or less than 30°. The divergence angle is, for example, substantially the same for all pixels. The extraction axes may differ from one pixel to another and be configured to cover an entrance pupil of an optical system so as to increase the luminous efficiency through the optical system.This embodiment is particularly advantageous when the entrance pupil is small and / or intended to be positioned close to the micro-screen, in order to obtain a compact optical system, as is necessary in "close-to-the-eye" optical systems.

[0072] Throughout this description, two optical components are said to be optically coupled when an optical mode can propagate at least partially through both optical components, possibly via intermediate optical components. The coupling can be achieved in various ways, for example, via direct coupling, a diffraction grating, a power divider, adiabatic coupling, evanescent coupling, directional coupling, etc.

[0073] Two guided optical modes are said to be optically coupled when the power of one comes entirely from the power of the other, without intermediate conversion into another form of energy.

[0074] For the purposes of this description, a layer is defined as an area consisting of one or more sub-layers of a material whose thickness along a z-axis is less than, for example, ten times or even twenty times, its longitudinal dimensions of width and length in a plane (x, y) perpendicular to the z-axis. A layer may be structured. When it consists of several sub-layers, the sub-layers may be made of different materials. The sub-layer(s) extend in planes substantially parallel to the (x, y) plane.

[0075] A layer or element is considered transparent for a given light spectrum if the layer or element transmits at least 50% of a luminous flux of interest included in the light spectrum.

[0076] Specific embodiments will be described relating to a device for displaying an image consisting of a set of pixels, preferably arranged in a matrix. However, these embodiments can be adapted to other optoelectronic devices, for example a micro-screen exploiting a self-focusing effect or an optical phase array (OPA).

[0077] In operation, the display device 1 displays the image in a spectrum of wavelengths, hereinafter referred to as the display spectrum. It comprises a substrate 100, a lighting module 51, and an array of addressing waveguides 115.j ([Fig. 1A]). The substrate 100 has an upper surface. The addressing waveguides 115.j are parallel to each other. They rest on the upper surface so as to be parallel to it.

[0078] Here and for the remainder of the description, a three-dimensional orthogonal direct frame (xi, yi, z) is defined, where the axes xi and yi form a plane parallel to the upper face of the substrate 100, the axis xi being oriented parallel to the addressing waveguides 115.j, and where the z axis is oriented substantially orthogonally to the upper face of the substrate 100, from the upper face towards the set of addressing waveguides 115.j. In the remainder of the description, the terms "vertical" and "vertically" are understood as relating to an orientation substantially parallel to the z axis, and the terms "horizontal" and "horizontally" as relating to an orientation substantially parallel to the plane (xi, yi). Furthermore, the terms "lower", "higher", "below" or "above" are understood as relating to an increasing positioning when moving away from substrate 100 along the +z direction.The term "lateral" refers to an orientation substantially parallel to the z-axis.

[0079] The lighting module 51 comprises a number Ni greater than or equal to 1 of light sources 53. The light sources 53 emit in the display spectrum, for example in the visible spectrum. Each light source can be a laser or a light-emitting diode. Advantageously, it has low temporal coherence. Here, each light source 53 is a superluminescent light-emitting diode (SLED).

[0080] The addressing waveguide assembly 115.j is optically coupled to the lighting module 51. That is, in operation, for each addressing waveguide 115.j, an optical mode from the lighting module 51 is guided into the addressing waveguide 115.j from an input of the addressing waveguide 115.j. The axis xi is oriented parallel to the addressing waveguide 115.j in the propagation direction of the guided optical mode. In this example, the display device 1 further includes one or more optional power dividers 114. Each addressing waveguide 115.j is optically coupled to a light source 53 via a power divider 114 and an input waveguide 112 of the display device 1. Preferably, each addressing waveguide 115.j is optically coupled to a single corresponding light source 53. The addressing waveguide 115.j, the power divider 114 and the input waveguide 112 are made of materials transparent to a corresponding emission wavelength of the light source 53, for example silicon nitride. .

[0081] Each power divider 114 has one input and a number Ng of outputs, strictly greater than 1. Each input waveguide 112 extends from an input of a power divider 114 to a light source 53. Each addressing waveguide 115.j is optically coupled to an output of a power divider 114. Each power divider 114 is configured to distribute equally the power of an incident optical mode, at the input of the power divider 114, into optical modes, each guided by an addressing waveguide 115.j optically coupled to an output of the power divider 114. The incident optical mode is guided by an input waveguide 112 from a corresponding light source 53. Each power divider may include one or more directional couplers and / or one or more multi-mode interferometer couplers (or MMI, for Multi-Mode Interferometer) and / or one or more Y junctions.

[0082] In this example, all the power dividers 114 have the same number of outputs Ng. Each power divider 114 groups together a number Ng of adjacent addressing waveguides 115.j corresponding to a display area of ​​the image. The display areas are contiguous. Thus, the set of addressing waveguides 115.j consists of Ng*Ni 115.j addressing waveguides, numbered from 115.1 to 115.p along the yi axis. To avoid cluttering the figures, Ng was chosen to be 10. The number Ni of display areas and light sources 53 was limited to 6. The total number of 115.j addressing waveguides is thus 60.

[0083] Here, each addressing waveguide 115.j in the assembly comprises a straight portion along a direction xa parallel to xi, and with the same orientation as xi. The set of straight portions forms a periodic array of period p along the axis yi. The addressing waveguides 115.j are single-mode waveguides. They can be of any type, such as edge waveguides, or, as here, ribbon waveguides. The period p is sufficiently large so that two adjacent addressing waveguides 115.j are not optically coupled to each other. The period p is chosen with regard to a surface footprint of the display device 1 that must be respected, for example, for the purpose of its integration into an optical system, or to enable it to be manufactured using photolithography tools in the semiconductor industry. The period p is for example between 1 pm and 10 pm, for example equal to 4 pm.

[0084] The display device 1 further comprises an array of extraction structures 61.ij and a set of addressing electrodes 205.i, the latter being represented by hatched polygons in [Fig. 1B]. Each extraction structure 61.ij of the array is arranged at an intersection of an addressing waveguide 115.j and an addressing electrode 205.i, as shown in the cross-sectional view of [Fig. 2A]. During operation, an addressing electrode 205.i, when polarized, acts on the opposing extraction structures 61.ij to extract, at least partially, the optical modes guided by the corresponding addressing waveguides 115.j. An extraction rate is defined for each extraction structure 61.ij as being equal to the ratio of the intensity of the light extracted by the extraction structure 61.ij, to the intensity of the corresponding guided optical mode.In the description, any characteristic described in connection with a particular extraction structure 61.ij is common to all extraction structures 61.ij in the matrix, unless expressly stated otherwise. Similarly, any particular arrangement of an element of a particular extraction structure 61.ij with another element of the display device 1 applies to all extraction structures 61.ij in the matrix, unless expressly stated otherwise.

[0085] Each addressing waveguide 115.j here comprises a separate optical modulator 52 arranged between the illumination module 51 and the extraction structure matrix 61.ij. The optical modulator 52 is capable of modifying the intensity of an optical mode guided by the addressing waveguide 115.j as it passes. For example, it is capable of modifying the intensity of the guided optical mode over a set or range of predetermined values, possibly extending to the total extinction of the guided mode. It can be of any known type, for example a Mach-Zehnder modulator or an electro-absorption modulator. In this example, each optical modulator 52 is arranged between a power divider 114 and the extraction structure matrix 61.

[0086] The display device 1 further includes a modulation circuit 56 electrically coupled to each optical modulator 52. In operation, the modulation circuit 56 controls each optical modulator 52 so that the intensity of the guided optical mode is equal to a value from the range or set of predetermined values.

[0087] The addressing electrodes 2O5.i are made of one or more electrically conductive materials, for example, a metal or a metal oxide, such as indium tin oxide (ITO) or aluminum-doped zinc oxide (AZO). Preferably, the addressing electrodes 2O5.i are transparent in the display spectrum. They extend parallel to the upper face of the substrate 100 and parallel to an axis ya of the (xi, yi) plane, making an angle [3] with the yi axis. They are numbered from 2O5.1 to 2O5.n from one corner to the other of the extraction structure matrix 61.ij

[0088] The common characteristics of the matrix extraction structures 61.ij are shown in more detail in Figures 2A, 2B, and 2C. Figure 2A is a schematic view along a vertical section including an optical axis of the addressing waveguide 115.j, at detail A of Figure 1B. Figure 2B is a detail of Figure 2A. Figure 2C is a schematic perspective view of certain elements of detail A of Figure 1B. In Figure 2A, the extraction structure 61.ij is shown, surrounded by the preceding extraction structure 61.il.j and the following extraction structure 61.i+lj in order of appearance along the addressing waveguide 115.j in the +xi direction. The extraction structures 61.il.j, 61.ij and 61.i+lj are located respectively at the intersections of the addressing electrodes 2O5.i-1, 2O5.i and 205.i+1 with the addressing waveguide 115.j.

[0089] Figure 2A shows elements of the display device 1 not visible in Figures IA and IB, namely a common electrode 105, a lower encapsulation layer 110, an upper encapsulation layer 120, a structured layer 270 and a hood 200.

[0090] The common electrode 105 rests here on the upper surface of the support substrate 100, optionally separated from it by one or more layers, for example an electrically insulating layer. The common electrode 105 is made of an electrically conductive material, for example a metal or a metal oxide, such as indium tin oxide (ITO) or aluminum-doped zinc oxide (AZO). It has a portion opposite each extraction structure 61.ij, preferably extending continuously under the entire matrix of extraction structures 61.ij

[0091] The addressing waveguide 115.j is separated from the common electrode 105 by the lower encapsulation layer 110. The lower encapsulation layer 110 is in physical contact with the common electrode 105 and the addressing waveguide 115.j. It is made of one or more dielectric materials that are transparent in the display spectrum. The dielectric material(s) have refractive indices strictly lower than one refractive index of the addressing waveguide 115.j. Here, the lower encapsulation layer 110 is made of silicon oxide. It has a thickness between 100 nm and 2 pm, for example, equal to 1 pm.

[0092] The extraction structure 6Li.j comprises an intermediate waveguide 130 and a high-index region 260. The intermediate waveguide 130 is separated from the addressing waveguide 115.j by the upper encapsulation layer 120. It extends parallel to the upper face of the support substrate 100 from an inlet face 131 to an outlet face 132. It comprises a liquid crystal. The inlet face 131 and the outlet face 132 are aligned with the addressing waveguide 115.j. The inlet face 131 makes an angle θ with the upper encapsulation layer 120, the upper surface of the substrate 100, and the plane (xi, yi). It is parallel to the ya axis. Consequently, it makes an angle equal to the angle [3] with respect to the yi axis. The exit face 132 is advantageously parallel to the ya axis.

[0093] According to a first embodiment of the extraction structure ôl.ij shown in [Fig. 2A], the output face 132 is substantially orthogonal to the upper surface of the substrate 100. According to a second embodiment of the extraction structure ôl.ij shown in [Fig. 3], the output face 132 makes an angle strictly less than 90 degrees with the upper encapsulation layer 120, the upper surface of the substrate 100, and the (xi, yi) plane. When each output face 132 is symmetrical to a corresponding input face 131 with respect to a plane parallel to the (ya, z) plane, the display device 1 is functional for another optical mode guided by the addressing waveguide 115.j propagating in the opposite direction.

[0094] The upper encapsulation layer 120 is in contact with the addressing waveguide 115.j and the intermediate waveguide 130 of each extraction structure ôl.ij of the matrix. It is made of one or more dielectric materials transparent in the display spectrum. The dielectric material(s) have refractive indices strictly less than one refractive index of the addressing waveguide 115.j and the extraordinary refractive index (ne) of the liquid crystal. Preferably, the refractive index(es) of the dielectric material(s) is / are greater than or equal to the ordinary refractive index (no) of the liquid crystal and less than or equal to 1.1 times the ordinary refractive index (no) of the liquid crystal. Here, the upper encapsulation layer 120 is made of silicon dioxide. For example, it has a thickness between 10 nm and 200 nm, measured directly above the addressing waveguide 115.j.

[0095] The liquid crystal, for example, has a nematic phase. It has an ordinary refractive index (no) and an extraordinary refractive index (ne). The ordinary refractive index (no) is the refractive index affecting a light wave propagating in the liquid crystal, linearly polarized in a direction perpendicular to the average orientation of the electric dipoles of the liquid crystal molecules. The extraordinary refractive index (ne) is the refractive index affecting a light wave propagating in the liquid crystal, linearly polarized in a direction parallel to the average orientation of the electric dipoles of the liquid crystal molecules. "Orientation of the molecules of a liquid crystal" means the average orientation of the electric dipoles of the liquid crystal molecules exhibiting an electric dipole.In the absence of an electric field in the liquid crystal, one or more anchoring layers, not shown in the figures, orient the liquid crystal molecules along a predominant, or preferred, direction.

[0096] The liquid crystal is, for example, a 5CB liquid crystal (4'-Pentyl-4-biphenylcarbonitrile or 4-Cyano-4'-pentylbiphenyl or 4-Pentyl-4'-cyanobiphenyl). For example, the ordinary refractive index (no) is equal to 1.542 and the extraordinary refractive index (ne) is equal to 1.735 for a wavelength X equal to 532 nm.

[0097] The addressing electrodes 2O5.i are arranged in the hood 200. The addressing waveguide 115.j and the intermediate waveguide 130 of the extraction structure 61.ij are interposed between the common electrode 105 and the addressing electrode 2O5.i. The addressing electrode 2O5.i is opposite the intermediate waveguide 130 and opposite the common electrode 105. It is located at a distance of, preferably non-zero, from the intermediate waveguide 130. The distance is, for example, between 100 nm and 2 pm, for example equal to 1 pm. The distance is a common distance for all the extraction structures 61.ij of the matrix.

[0098] The heights of the intermediate waveguides 130 measured along the z-axis are equal to a common height Hg. Advantageously, the common height is optimized by simulation to maximize the extraction rate of the extraction structures 61.ij. The common height Hg is in this example between 500 nm and 5 pm, preferably substantially equal to 1.5 pm, for a display spectrum within the visible spectrum, and a height of the addressing waveguides 115.j between 50 nm and 300 nm, preferably substantially equal to 150 nm.

[0099] The cover 200 is transparent across the display spectrum. It is, for example, made of quartz, glass, or a polymer. It may optionally include layers transparent in the display spectrum, such as one or more layers of silicon oxide or silicon nitride. The hood 200 rests on the intermediate waveguides 130 of all the extraction structures 6Li.j, on a side opposite the common electrode 105, for example in physical contact with them or, as shown here, separated from them by a portion of the structured layer 270 in physical contact with the intermediate waveguides 130 and the hood 200. If the portion has a refractive index greater than or equal to the extraordinary refractive index (ne) of the liquid crystal, the portion of the material preferably has a thickness of less than 20 nm, or even less than 10 nm. The hood 200 has a refractive index nv strictly less than the extraordinary refractive index (ne) over a whole lower region of the hood 200 extending from the addressing electrodes 205.i to a lower face of the hood 200.

[0100] The high-index region 260 extends from the exit face 132 of the intermediate waveguide 130 to the entrance face 131 of the subsequent extraction structure 61.i+1.j. It has a refractive index np strictly greater than the ordinary refractive index (n0) of the liquid crystal. In this example, the high-index region 260 is part of the structured layer 270. The latter rests on the upper encapsulation layer 120 and encapsulates the intermediate waveguides 130 of all the extraction structures 61.ij. The structured layer 270 is in contact with the entire entrance face 131, the entire exit face 132 of each extraction structure 61.ij, and possibly with the upper encapsulation layer 120, as shown here. The refractive index of the high index 260 region, for example, is between 1.5 and 2.Preferably, the difference between np and the extraordinary refractive index (ne) of the liquid crystal is less than or equal to 0.2 in absolute value, preferably less than or equal to 0.05 in absolute value.

[0101] The inlet face 131 of the following extraction structure 61.i+lj is located at a distance ep from the outlet face 132, measured parallel to the plane (xi, yi). ep is the smallest distance separating the inlet face 131 from the outlet face 132 in a horizontal plane. The distance ep is, for example, less than 20 nm, preferably less than 10 nm, advantageously as small as possible, it being understood that it may be zero.

[0102] The inlet faces 131 of all intermediate waveguides 130 facing an addressing electrode 205.i are preferably coplanar. The outlet faces 132 of all intermediate waveguides 130 facing an addressing electrode 205.i are also preferably coplanar. This is the case in this example, since for each addressing electrode 205.i, the intermediate waveguides 130 facing the addressing electrode 205.Î are portions of a common planar waveguide 135, shown in [Fig.2C].

[0103] In this example, when an extraction structure 61.ij is preceded by another, the entrance face 131 of its intermediate waveguide 130 is placed at a distance Lc from the entrance face 131 of the intermediate waveguide 130 of the preceding extraction structure 61.i-1.j. Thus, the matrix of light extraction structures 61.ij is periodic with period Lc along the xa axis; and when the addressing waveguides 115.j have periodic straight portions with period p, the image pixels are arranged in an orthogonal matrix with steps and d2 = Lccos / ^ respectively along y a and an axis of the matrix orthogonal to y a. Lc defines a coupling length between the intermediate waveguide 130 and the addressing waveguide 115.j.

[0104] The Lc period is chosen to be sufficiently large to obtain an extraction rate greater than or equal to 50%, or greater than or equal to 80%, or even greater than or equal to 90%. Here, Lc is between 10 pm and 30 pm, preferably between 20 pm and 25 pm.

[0105] An example of the operation of an extraction structure 61.ij will now be described. A polarized optical mode of the transverse magnetic (TM) type and of wavelength X belonging to the display spectrum is guided along the +xa axis by the addressing waveguide 115.j towards the entrance face 131 of the intermediate waveguide 130. A non-zero potential difference is applied between the common electrode 105 and the addressing electrode 205.i so as to create an electric field sufficient to orient liquid crystal molecules parallel to the electric field. Since the addressing electrode 205.i and the common electrode 105 are opposite and facing the intermediate waveguide 130, the electric field is substantially parallel to the z-axis in a substantial part of the intermediate waveguide 130, defining a coupling portion of the intermediate waveguide 130.Consequently, the molecules of the liquid crystal are mostly oriented parallel to the z-axis in the coupling portion, which is the polarization direction of the guided optical mode.

[0106] The operating mode described here is only one example consistent with the figures. Alternatively, the extraction structure 61.ij can also be suitable for extracting a polarized guided mode of the transverse electrical (TE) type when a zero or non-zero potential difference is applied between the common electrode 105 and the addressing electrode 205.i. The extraction structure 61.ij can also be suitable for extracting a polarized optical mode of the transverse magnetic (TM) type when the common electrode 105 and the addressing electrode 205.i are at the same potential. For some of these variants within the scope of the art, it is necessary to modify the arrangement of the common electrode 105 and the addressing electrode 205.Î with respect to the intermediate waveguide 130 and / or the orientation of an extraordinary axis of the liquid crystal in the absence of an electric field in the liquid crystal.

[0107] The thickness of the upper encapsulation layer 120 is sufficiently thin to allow an evanescent portion of the guided optical mode to interact with the coupling portion. Due to the orientation of the molecules parallel to the polarization direction of the guided mode, the refractive index of the coupling portion allows a mode excited by the evanescent portion to propagate in the intermediate waveguide 130; that is, the propagation constants of the excited mode and the guided optical mode are substantially equal in the coupling portion. Thus, a portion of the guided optical mode is optically coupled to the intermediate waveguide 130 by evanescent coupling and exits through the output face 132 to generate an emitted beam 91. The extracted light, which is relevant to the definition of the extraction ratio (see above), corresponds to the emitted beam 91. Thus, the extraction ratio is equal to the ratio of the intensity of the emitted beam 91 to the intensity of the guided optical mode.Advantageously, the difference in absolute value between np and the extraordinary refractive index (ne) is minimized to reduce reflection of the emitted beam 91 on the output face 132 and / or minimize deflection of the emitted beam 91 at the passage of the output face 132 and / or minimize diffraction of the evanescent part of the guided optical mode on the input face 131.

[0108] The emitted beam 91 propagates in free space in the high-index region 260 along a principal axis until it reaches the entrance face 131 of the next extraction structure 61.i+1.j. The principal axis makes an angle α with a normal to the entrance face 131 greater than or equal to a minimum angle of incidence on the surface of the entrance face 131 for which the light is totally reflected, as shown in the optical diagram of Figure 4. Only the entrance face 131 of the next extraction structure 61.i+1.ja is shown in Figure 4. Points A, B, C, D, E and F are construction points marking the passage of a light ray in the vicinity of the entrance face 131 with respect to it. Point D, for example, is a point located at an interface between the hood 200 and the structured layer 270. The angle a is equal to y - arcsin ( COS^siny ) • H therefore increases as a function of [3. When y is equal to 45 degrees, ¢) is equal to [3.

[0109] Thus, the emitted beam 91 is reflected by total internal reflection on the entrance face 131 of the subsequent extraction structure 61.i+lj into a reflected beam 92. The reflected beam 92 propagates in free space in the high-index region 260 along a direction making an angle equal to angle a with the normal to the entrance face 131, and a angle ¢) with a normal to the top face of the substrate 100 and to a bottom face of the hood 200. The angle ¢) can be determined by a ray tracing model.

[0110] Conversely, when a zero potential difference is applied between the common electrode 105 and the addressing electrode 205.i, the electric field is substantially zero inside the liquid crystal. The liquid crystal molecules are therefore mostly oriented parallel to a direction favored by one or more anchoring layers, parallel to the (xi, yi) plane, here parallel to the xa axis. Due to this molecular orientation, the guided optical mode interacts with a medium having a refractive index equal to the ordinary refractive index (n0) in the coupling portion, and no mode of the intermediate waveguide 130 is excited or guided. Thus, the guided optical mode remains confined within the addressing waveguide 115.j.

[0111] The dimensioning of the extraction structures 61.ij and the addressing waveguides 115.j, as well as their relative positioning, can be optimized using electromagnetic wave propagation simulation tools implementing algorithms such as FDTD (Finite Difference Time Domain), FDE (Finite Difference Eigenmode), or EME (Eigenmode Expansion). The behavior of the liquid crystal, and consequently its refractive index, when a potential difference is applied between the common electrode 105 and the addressing electrode 205.i, can be deduced from simulation results obtained by a finite element method, such as that offered by the commercial software COMSOL®.

[0112] Figure 5A is a graph showing the values ​​of a (C1 curve, in degrees) and β) (C2 curve, in degrees) as a function of θ3 (x-axis, in degrees), for an angle y equal to 54.74 degrees. Curve C3 shows the angular limit beyond which reflection is total on the entrance face for nP equal to 1.735 and an ordinary refractive index of the liquid crystal equal to 1.542. Thus, in this particular case, the angle θ3 must be greater than or equal to 56.2 degrees for the emitted beam 91 to be totally reflected on the entrance face 131 (the point of intersection of curves C1 and C3). The angle θ) is therefore greater than or equal to 58.5 degrees (the value of θ) for an angle θ3 corresponding to the point of intersection of curves C1 and C3).

[0113] Figure 5B is a graph showing the values ​​of a (C11 curve, in degrees) and β) (C12 curve, in degrees) as a function of θ (x-axis, in degrees), for an angle y equal to 45 degrees. Curve C13 shows the angular limit beyond which reflection is total on the entrance face for nP equal to 1.735 and an ordinary refractive index of the liquid crystal equal to 1.542. Thus, in this particular case, the angle θ must be greater than or equal to 50.2 degrees for the emitted beam 91 to be totally reflected on the entrance face 131 (the point of intersection of the C11 curves). and C13). The angle ¢) is therefore greater than or equal to 50.2 degrees (value of ¢) for an angle [3 corresponding to the point of intersection of the curves Cl 1 and C13).

[0114] Figure 5C is a graph showing the values ​​of θ (ordinate axis in degrees) as a function of θ (abscissa axis in degrees) for an angle y equal to 45 degrees (curve C21), equal to 30 degrees or 60 degrees (curve C22), and equal to 15 degrees or 75 degrees (curve C23). Curve C24 shows the angular limit beyond which total reflection occurs on the underside of the hood 200 for nv equal to 1.5. Thus, for this particular hood 200 and an angle y equal to 45 degrees, an angle θ between 44.8 degrees and 59.8 degrees results in a reflected beam θ being transmitted to a hood 200 with a refractive index nv equal to 1.5. This result is obtained for an angle [3] between 52 degrees and 57.7 degrees, when y is equal to 54.74 degrees. The reflected beam 92 makes an angle 0V with a normal to the underside of the hood 200 equal to • t np ■ j. arcsm( „;sin(^) )•

[0115] The hood 200 further comprises an upper face opposite the lower face of the hood 200. The lower and upper faces of the hood 200 are flat and parallel to each other. The angle 0V is therefore also the angle that the reflected beam 92 makes with the upper face when it reaches it. For example, under the conditions of [Fig. 5B], when nv is equal to 1.5 and [3] is equal to 50.2 degrees, the angle 0V is equal to 62.7 degrees. The refractive index of the medium surrounding the upper face of the hood 200 must be sufficiently high so that the reflected beam 92 is extracted from the display device 1 by the upper face of the hood 200 as a pixel beam 93, as shown in [Fig. 12B].

[0116] Optionally, each extraction structure 61.ij further comprises a hologram 250 opposite the entrance face 131 of the next extraction structure 61.i+1.j. The set of holograms 250 is therefore arranged in a matrix with the same pitch as the extraction structure matrix 61.ij. Each hologram 250 is configured to deflect the reflected beam 92 so as to reduce the propagation angle in the hood 200 of the reflected beam 92 with respect to a normal to a principal plane of the hood. Here, since the lower and upper faces of the hood 200 are parallel, the propagation angle is equal to 0V before the reflected beam 92 reaches the hologram 250. The hologram 250 may be a transmission hologram. Advantageously, as shown in [Fig.12C], it is a reflection hologram.After the hologram 250, the reflected beam 92 propagates into the hood 200 in a direction making an angle 0'v with the normal to the principal plane and to the lower and upper faces of the hood. The angle 0'v is small enough to extract the reflected beam 92 from the display device 1 into a pixel beam 93, either through the upper face of the hood 200 when the hologram 250 is a . transmission hologram, either through substrate 100 when hologram 250 is a reflection hologram.

[0117] According to a particular embodiment of the display device 1, each hologram 250 deflects the reflected beam 92 so as to extract the reflected beam 92 from the display device 1 into the pixel beam 93 along a predefined extraction axis and a also predefined divergence angle so that the display device 1 is a directional micro-screen, for example adapted to an optical system "close to the eye".

[0118] An example of the operation of the display device 1 is illustrated in [Fig. 6]. In this figure, the display device 1 is shown at a given time t during which 4 addressing electrodes 2O5.i (in uniform gray in the figure) have been activated by applying an electrical potential difference between each of these active addressing electrodes 2O5.i and the common electrode 105 by an addressing circuit 54 of the display device 1. The common electrode 105 can be connected by the addressing circuit 54 to a fixed electrical potential, for example to ground.

[0119] The electrical potential difference causes the refractive index of the liquid crystal to shift in the polarization direction of the optical modes guided by the addressing waveguides 115.j, from a first level to a second level strictly higher than the first level. The first and second levels are here equal, respectively, to the ordinary and extraordinary refractive indices of the liquid crystal. Thus, the optical modes guided by the addressing waveguides 115.j intersecting the active addressing electrodes 205.i are coupled by evanescent coupling to the intermediate waveguides 130 of the respective extraction structures 01.ij located at an intersection of an addressing waveguide 115.j and an active addressing electrode 205.i.

[0120] The other addressing electrodes 205.i are inactive (hatched in [Fig. 6]), i.e., they are maintained at the same electrical potential as the common electrode 105 by the addressing circuit 54. The liquid crystal molecules of the corresponding intermediate waveguides 130 are therefore oriented along the preferred direction. The refractive index of the liquid crystal for the polarization direction of the optical modes guided by the addressing waveguides 115.j is thus equal to the first level, here equal to the ordinary refractive index. The optical modes guided by the addressing waveguides 115.j are therefore not coupled to the intermediate waveguides 130 of the extraction structures 61.ij intersecting the inactive addressing electrodes 205.i.

[0121] By way of illustration, the display device 1 shows here, at time t, 8 pixels of the image for one active addressing electrode 2O5.i, 9 pixels for another active addressing electrode 2O5.i, and none for the two remaining addressing electrodes 2O5.i. The displayed pixels are represented by filled squares. The beam intensities The corresponding pixels 93 are schematically represented in grayscale, with a darker grayscale level corresponding to a higher intensity. The modulation circuit 56 controls the optical modulators 52 of all the addressing waveguides 115.j intersecting the active addressing electrodes 205.i, so as to fix the intensities of the pixel beams 93 to values ​​corresponding to respective grayscale levels of the image. In this example, some guided optical modes have an intensity substantially of zero. Advantageously, the display device 1 further includes a power supply circuit for the lighting module 51 configured to cut off the power supply to each light source 53 corresponding to a display area containing only black pixels at time t.The power supply circuit can also be configured to adjust the emission level of each light source 53 according to the grey level of the brightest pixel in the display area optically coupled to the light source 53, so that the intensity of the optically guided mode corresponding to the brightest pixel in the display area is not modulated by the corresponding optical modulator 52. Thus, the power consumption of the display device 1 is minimized.

[0122] In [Fig. 6], arrows indicate a scanning direction of the addressing electrode set 2O5.i imposed by the addressing circuit 54. The addressing electrode set 2O5.i is divided here into contiguous addressing zones, each consisting of a group of adjacent addressing electrodes 2O5.i. In this example, all addressing zones have the same number of addressing electrodes 2O5.i, here equal to 8. The addressing circuit 54 is configured to sequentially bias, one by one, the addressing electrodes 2O5.i of each addressing zone along the scanning direction so as to shift the refractive index of the liquid crystal of the facing intermediate waveguides 130 towards the second level. In this example, as shown in [Fig.6], the addressing circuit 54 simultaneously biases an addressing electrode 2O5.i of each addressing zone, that is to say, it scans all addressing zones at the same time, here according to the same sequence. The scanning is fast enough for a viewer to perceive the image thanks to an effect of retinal persistence.

[0123] The addressing electrodes 2O5.i are arranged such that each pair of simultaneously polarized addressing electrodes 2O5.i, belonging to contiguous addressing zones, activates two extraction structures 61.ij located at two opposite ends of the extraction structure matrix 61.ij and opposite two adjacent addressing waveguides 115.j. Thus, at any instant t of the display sequence, each addressing waveguide 115.j can display one pixel of the image, i.e., one extraction structure 61.ij is activated per addressing waveguide. 115.j. The screen's energy consumption is thus reduced and the display frequency maximized.

[0124] Figure 7 shows an example of an image 42 to be displayed by the display device 1. The image 42 comprises a matrix of square pixels extending along two orthogonal axes, one of which makes an angle equal to the angle [3] with the addressing waveguides 115.j. This is a particularly advantageous configuration - arccos For example, it is possible to choose Lc to obtain an extraction rate of 90%, and a period p such

[30] is within a range of values ​​allowing the emitted beam 91 to be reflected into a reflected beam 92 on the input face 131 and possibly to transmit the reflected beam 92 to a hood 200. An example of parameterization of the display device 1 allowing this result to be achieved has been reported in Table 1. for which di is equal to d2, obtained when the angle p is equal to " Parameter Value no 1.542 ne 1.732 np 1.7 nv 1.5 Y 45° P 7 pm Le 21 pm P 55° db d2 12 pm Table 1

[0125] The image 42 to be displayed can be obtained from the standard image 41 of [Fig. 7]. The standard image 41 comprises a matrix of pixels arranged according to an orthonormal grid aligned on the axes xi and yi. For clarity, the standard image 41 and the image 42 to be displayed have a reduced number of pixels, but they can have any number of pixels. The standard image 41 can correspond to any image standard. For example, it can be a VGA, SVGA, HD, Full HD, etc. image.

[0126] In the case where the image 42 to be displayed is obtained from the standard image 41, the display device 1 may further include an image conversion circuit (not shown) configured to convert the standard image 41 into the image 42 to be displayed. To achieve this, the image conversion circuit can perform all known types of mathematical and / or image processing, such as interpolations, averaging, and dithering techniques. Advantageously, the extraction structure matrix 61.ij has an aspect ratio similar or identical to that of the standard image 41. Preferably, the number of extraction structures 61.ij is equal to the number of pixels in the standard image 41, within 10%.

[0127] The display device 1 obtained with the parameters of Table 1 can, for example, be used to display a VGA image of 640x480 pixels. Its lighting module 51 can, for example, comprise 20 light sources 53. A number Ng equal to 72 addressing waveguides 115.j optically coupled to a light source 53. The extraction structure matrix 61.ij has a footprint of approximately 10 mm by 7.5 mm.

[0128] A display system 10 may comprise several display devices 1 as described in connection with Figures IA, IB, 2A, 2B, 2C, 3 and 6 arranged one above the other. The pixel beams 93 of each display device 1 are, for example, extracted from the same side of the display system 10. The display devices 1 may share their addressing circuits 54 and / or their modulation circuits 56 and / or their power supply circuits.

[0129] For example, it is possible to superimpose at least two display devices 1 to display a color image. Preferably, the display system 10 comprises three display devices 1 whose display spectra are within wavelength ranges corresponding respectively to green, blue, and red. The display devices 1 may have the same number of extraction structures 61.ij, arranged in the same way. The input faces 131 of the extraction structures 61.ij of one display device 1 may be aligned, up to a constant offset, with the input faces 131 of the extraction structures 61.ij of another display device 1, for example, so that the display system 10 is capable of displaying a color image.For example, it is possible to equalize all the coupling lengths of the 3 display devices and to adjust the extraction rates of each display device 1 by optimizing one or more dimensions of its addressing waveguides 115.j. .

[0130] When the display spectra of the display devices 1 are different, one or more display devices 1 of the display system 10 may include a hologram matrix 250 since holograms 250 are inherently wavelength-selective. The pixel beams 93 of a display device 1 may then be extracted from the display device 1 and pass through another superimposed display device 1 comprising a hologram matrix 250 before being extracted from the display system 10.

[0131] A second example of a display system 10 is shown in Figures 8A, 8B and 8C. Figures 8B and 8C are respectively top views of details B and C of [Fig. 8A],

[0132] In these figures, the display system 10 comprises a first and a second display device 1 as described in connection with Figures IA, IB, 2A, 2B, 2C, 3, and 6. The respective addressing waveguide sets 115.j, 115.1 of the first and second display devices 1 are interleaved in a display plane of the display system 10. The substrates 100 of the first and second display devices 1 are identical and consist of a common substrate 100. The display plane is parallel to the upper face of the substrate 100. Each addressing electrode 205.i of the first display device 1 is an addressing electrode 205.k of the second display device 1.

[0133] The addressing waveguides 115.j, 115.1 of the first and second display devices 1 have straight sections. The straight sections, the extraction structure matrix 61.kl, and the addressing electrodes 205.k of the second display device 1 are superimposed, respectively, on the straight sections, the extraction structure matrix 01.ij, and the addressing electrodes 205.i of the first display device 1 by a rotation of 180 degrees around an axis parallel to the z-axis, followed by a translation. Thus, the straight sections of the second display device 1 are oriented along a direction x'a opposite to the direction xa, and are positioned equidistant from the straight sections of the first device. The addressing electrodes 205.k of the second display device 1 are oriented in a direction y'a opposite to the direction ya. The extraction structures 61.ij, 61.k.l of the first and second display devices 1 conform to the second possibility of [Fig.3].

[0134] The addressing circuits 54 of the first and second display devices 1 can be a common addressing circuit 54, as shown here. In operation, a common addressing electrode 205.i, 205.k+1 of the first and second display devices 1 can be activated to optically couple addressing waveguides 115.j, 115.1 belonging to the first and second display devices 1 to intermediate waveguides 130 of corresponding extraction structures ôl.ij, ôl.k+ll, belonging to the first and second display devices 1. The display system 10 is, for example, configured to display a higher-resolution image by combining the images displayed by the first and second display devices 1, each displaying a distinct half of the pixels of the higher-resolution image.

[0135] In [Fig. 8C], an advantageous arrangement is shown that allows the addressing waveguides 115.j, 115.j+1, 115.1, 115.1+1 to be interrupted to allow the optical modulators 52 to operate, without risking spurious light emission and / or feedback inverse of unwanted light in addressing waveguides 115.j, 115.j+1, 115.1, 115.1+1. The arrangement may also be useful to display device 1 described in connection with figures IA, IB, 2A, 2B, 2C, 3 and 6.

[0136] The addressing waveguides 115.1 of the second display device 1 each have an end opposite the lighting module 51. This end includes a diffraction grating 117 configured to extract, preferably in its entirety, an optical mode guided by the corresponding addressing waveguide 115.1, towards an absorber 118. The absorber 118 may be an opaque or absorbent layer, for example, an absorbing polymer. When the first and second display devices 1 comprise a common cover 200, or a common support plate 201 as introduced below, the absorber 118 may be arranged on the cover 200 or on the support plate 201.

[0137] The second example of a display system 10 can be superimposed on one or more display devices 1 as described in connection with Figures IA, IB, 2A, 2B, 2C, 3 and 6; and / or on another display system 10 according to the second example. Alternatively, the first and second display devices 1 can share their addressing waveguides 115.j, 115.1, i.e. each addressing waveguide 115.j of the first display device 1 is an addressing waveguide 115.1 of the second display device 1, and vice versa.

[0138] An example of a method for making a display device 1 as illustrated in [Fig. 1B] is now described. This method includes the fabrication of an upper part 103 of the display device 1 (Figures 10A to 10C) and the actual fabrication of the display device 1 incorporating the upper part 103 (Figures 12A to 12C).

[0139] In [Fig. 10A], a cover 200 is provided. For this step, it is possible to deposit an electrically conductive layer on a top surface of a substrate 600. The substrate 600 is, in this example, made of a material transparent in the display spectrum. It can, for example, be quartz, glass, or a polymer.

[0140] The electrically conductive layer can be made of a metal, or of a metal oxide, such as for example indium tin oxide (ITO). It is etched locally over its entire thickness to produce the addressing electrodes 205.i.

[0141] An encapsulation layer 610 is formed on the support 600 so as to be in contact with the addressing electrodes 205.i and with the upper surface of the support 600. The encapsulation layer 610 has, on a side opposite the addressing electrodes 205.i, a flat face substantially parallel to the upper surface of the support 600. The encapsulation layer 610 is made of a material transparent in the display spectrum. For example, it is made of the same material as the support 600. Here, it is silicon oxide. The support 600 and the encapsulation layer 610 together define the cover 200.

[0142] The structured layer 270 is then formed on the cap 200 by a nano-imprint lithography (NIL) process. For this purpose, a film 315 is deposited on the encapsulation layer 610, in contact with a face of the encapsulation layer 610 opposite the support 600. The film 315 has a high refractive index strictly greater than the ordinary refractive index of the liquid crystal, for example, equal to the extraordinary refractive index of the liquid crystal plus or minus 0.05. It may be greater than or equal to the extraordinary refractive index. It may be a xerogel, or advantageously, a UV adhesive film, for example, a commercial optical adhesive such as that distributed by Norland®, under the reference NOA 170.

[0143] In [Fig.1OB], the film 315 is then molded by a flexible pad 310. During this step, the pad 310 is brought into contact with the film 315 and pressure is applied to the pad 310, perpendicular to the upper face of the support 600, until the pad 310 is eventually brought into contact with the encapsulation layer 610.

[0144] The pad 310 can advantageously be obtained by the manufacturing process of Figures 9A to 9E, or the process of Figures 13A to 13D described below. The pad 310 has a substantially flat bearing face 310.3 and trenches 312 extending deep into the pad 310 from the bearing face 310.3. When the pad 310 is not in contact with the encapsulation layer 610, the pressure is uniform so as to keep the bearing face 310.3 of the pad 310 substantially parallel with an upper face of the encapsulation layer 610 opposite the support 600. Consequently, in all cases, the bearing face 310.3 of the pad 310 is substantially parallel with the upper face of the encapsulation layer 610 during the shaping of the film 315.

[0145] In [Fig. 1OC], the upper part 103 of the display device 1 is obtained. When the film 315 is a UV adhesive, it is illuminated by UV radiation while holding the pad 310 in place to harden it. The pad 310 is then removed. Since the pad 310 is flexible, the UV adhesive does not adhere to the pad 310 upon its removal. For this substep, the pad 310 is advantageously made of an elastomer such as polydimethylsiloxane (PDMS).

[0146] In the alternative in which the film 315 is a xerogel, the buffer 310 is removed, and then the molded film 315 is heated to be crosslinked, and consequently hardened.

[0147] The molded and cured film 315 constitutes the structured layer 270. It comprises protruding parts 275, each corresponding to a trench 312 of the pad 310. Since the bearing face 310.3 of the pad 310 is parallel with the upper face of the encapsulating layer 610, the edges of the protruding parts 275 of the structured layer 270 are coplanar and parallel to the upper face of the layer 610. The protruding parts 275 of the structured layer 270 therefore have identical heights, equal to a common height, substantially equal to the height Hg.

[0148] Each projecting part 275 comprises an inclined face 275.1 corresponding to a first face 310.1 of a trench 312 of the buffer 310, and intended to be an inlet face 131 of an extraction structure Δl.ij. It also comprises a face 275.2 opposite the inclined face 275.1, corresponding to a second face 310.2 of the trench 312. The face 275.2 is intended to be the outlet face 132 of the extraction structure Δl.ij preceding the extraction structure Δl.ij.

[0149] Alternatively, the structured layer 270 can be formed by a greyscale lithography.

[0150] A polyimide layer (not shown) is then formed in contact with the structured layer 270 between the protruding parts 275, or in contact with the encapsulation layer 610 when the buffer 310 has been brought into contact with it during the nano-imprint lithography step. The polyimide layer is brushed in a direction intended to be a preferred direction for the orientation of the liquid crystal molecules when no electric field is present in the liquid crystal. The polyimide layer is thus intended to be a top anchoring layer of the liquid crystal.

[0151] In [Fig.12A], a lower part 101 of the display device 1 is provided. The lower part 101 is a photonic chip. It includes the substrate 100, the common electrode 105, the lower encapsulation layer 110, the addressing waveguide assembly 115j, the upper encapsulation layer 120 and a lower liquid crystal anchoring layer (not shown).

[0152] Just like the upper anchoring layer, the lower anchoring layer can be a polyimide layer. It is brushed in a direction intended to be the preferred direction for the orientation of the liquid crystal molecules when no electric field is present in the liquid crystal.

[0153] A bead of adhesive 285 is formed on the lower anchoring layer or in contact with the upper encapsulation layer 120. The adhesive bead 285 is closed, i.e., it delimits a central region. It has at least one through-opening lateral opening communicating with the central region. The central region may, for example, have a substantially rectangular shape. Alternatively, the adhesive bead 285 may be formed on the upper portion 103.

[0154] The upper portion 103 of [Fig. 1OC] is then transferred onto the upper encapsulation layer 120, so as to bring the protruding portions 275 of the structured layer 270 into contact with the lower anchoring layer at the central region. Preferably, all the protruding portions are entirely aligned with the central region. A [specific application] can be applied to the upper portion 103. Sufficient pressure is applied to drive the protruding parts into the lower anchoring layer, possibly until the protruding parts are in contact with the upper encapsulation layer 120. The adhesive bead 285 secures the upper part 103 to the lower part 101. The structured layer 270 acts as a spacer, maintaining a gap between the upper encapsulation layer 120 and the cover 200. If the lower and upper parts 101, 103 are rigid, the adhesive bead 285 can be a UV adhesive, for example, the same UV adhesive as the film 315. If so, it is illuminated by UV radiation to secure the upper part 103 to the lower part 101.

[0155] In [Fig. 12B], a liquid crystal is introduced into the central region through the through-side opening so as to fill the entire volume delimited by the adhesive bead and the lower and upper anchoring layers. The through-side opening is then sealed.

[0156] At the end of this step, a display device 1 is obtained according to a first possibility. Continuous volumes, delimited by the structured layer 270, the upper encapsulation layer 120 and, optionally, the encapsulation layer 610 when the buffer 310 has been brought into contact with the encapsulation layer 610, define the intermediate waveguides 130. Each intermediate waveguide 130 extends between two protruding parts 275 of the structured layer 270. The inclined face 275.1 and the face opposite the inclined face 275.1 of each protruding part 275 constitute, respectively, the inlet face 131 of an extraction structure 61.ij, and the outlet face 132 of the extraction structure 61.il.j preceding the extraction structure 61.ij

[0157] [Fig. 12C] is an additional and optional step for obtaining a display device 1 according to the invention comprising the hologram matrix 250. For this purpose, a holographic film 251 comprising the hologram matrix 250 is transferred onto the cover 200 on one side of the upper part 103 opposite the lower part 101. The hologram matrix 250 can be obtained according to the method of [Fig. 11]. The hologram matrix is ​​aligned with respect to the extraction structure matrix 61.ij so as to place a hologram 250 opposite each entrance face 131 of the extraction structure matrix 61.ij

[0158] In [Fig. 11], a hologram matrix 250 is recorded. To do this, a holographic film 251 is deposited onto a support plate 201. A blade 360 ​​is brought into contact with the holographic film 251. The blade 360 ​​and the support plate 201 are transparent in the display spectrum. A prism 350 is positioned on the blade 360 ​​on one side of the blade 360 ​​opposite the holographic film 251. The prism 350 is, for example, separated from the blade 360 ​​by an immersion liquid 351, which limits unwanted reflections at the interfaces between the prism 350, the immersion liquid 351, and the blade 360. The immersion liquid 351 also allows the prism 350 to move without friction during the recording of the hologram matrix 250. The support plate 201 and the blade 360 ​​each have opposite faces that are flat and parallel to each other.

[0159] The prism 350 is made of a material transparent in the display spectrum. It has a high refractive index, for example equal to 1.965. The support plate 201 and the blade 360 ​​can be made, for example, of glass or a polymer.

[0160] An iterative process is then carried out in which, at each step, a reference beam 95 and an object beam 96 are interfered with a first position of the hologram matrix 250; then the assembly consisting of the support plate 201, the holographic film 251 and the blade 360 ​​is moved relative to the prism 350 until a second position of the hologram matrix 250 is reached.

[0161] The reference and object beams 95, 96 are, for example, originated from the same fiber laser source equipped with a power divider (not shown). The reference beam 95 reaches the holographic film 251 through the prism 350 and the plate 360. The object beam 96 reaches the holographic film 251 through the support plate 201. An angle W of incidence of the reference beam 95 on the prism 350 is such that the reference beam 95 makes an angle at the level of the holographic film 251 with respect to a normal to a principal plane of the holographic film 251, equal to the angle 0V.

[0162] An angle W' of incidence of the object beam 96 on the support plate 201 is such that the object beam 96 makes an angle with respect to the normal to the principal plane of the holographic film 251 equal to the angle 0'v of a corresponding extraction structure 61.ij opposite which the hologram 250 is intended to be positioned. The angles W and W' are adjusted by optical devices not shown. The reference beam 95 has a divergence and spectral characteristics similar or identical to a reflected beam 92 in the hood 200 from an extraction structure 61.ij. The object beam 96 has a divergence and spectral characteristics similar or identical to the pixel beam 93 in the hood 200, intended to be extracted from the display device 1 by the corresponding extraction structure 61.ij. The angle W' can be changed from one step to another in the iterative process.Recording the 250 hologram matrix is ​​facilitated when the y-angle is less than or equal to 45 degrees.

[0163] The support plate 201 is then removed with the holographic film 251. The holographic film 251 is transferred with the support plate 201 onto the cover 200 to obtain the display device 1 of [Fig.12C].

[0164] Now, a first manufacturing process for buffer 310 will be described in relation to Figures 9A to 9E. This process leads to the production of a buffer 310 specially designed for the nano-imprinting of extraction structures 61.ij as represented in [Fig.2A].

[0165] In [Fig. 9A], a master substrate 102 of crystalline silicon is provided. The master substrate 102 can be made from a monolithic crystalline silicon wafer or from a silicon-on-insulator (SOI) wafer. Here, it is an SOI wafer, possibly after re-epitaxial silicon processing. It comprises a wafer 401, a crystalline top layer 403, and a stop layer 402 interposed and in contact with the wafer 401 and the crystalline top layer 403. The crystalline top layer 403 is, for example, made of crystalline silicon with an (100) or (110) orientation. The stop layer 402 is, for example, made of silicon oxide.

[0166] A hard mask 404 is then formed on an upper face 102.1 of the upper crystalline layer 403, the latter being located on one side of the upper crystalline layer 403 opposite the arrest layer 402. The hard mask 404 has openings 404.1 passing through the hard mask 404. The openings 404.1 are through trenches, parallel to a common direction and to the upper face 102.1. The hard mask 404 is, for example, made of silicon oxide. The openings 404.1 are here spaced at a center-to-center distance equal to Lc in the plane of section [Fig. 9A].

[0167] In [Fig. 9B], trenches 276 are etched into the upper crystalline layer 403 through the openings 404.1 by anisotropic wet etching. When the master substrate 102 has a stop layer 402, the wet etching is selective with respect to the stop layer 402. Each trench 276 has a first face of interest 276.1, a face 276.3 opposite the first face of interest 276.1, and a bottom connecting the first face of interest 276.1 to the opposite face 276.3. The first face of interest 276.1 and the opposite face 276.3 are silicon crystal planes revealed by the anisotropic wet etching. This is, for example, etching in a tetramethylammonium hydroxide (TMAH) solution or a potassium hydroxide (KOH) solution. Thus, the first face of interest 276.1 and the opposite face 276.3 are smooth and have precise angular orientations relative to the upper face 102.1, equal to 35.26 degrees, 45 degrees or 54.74 degrees.Here, the bottom of trench 276 consists of the arrest layer 402, thus the depth of trench 276 is well controlled. Trench 276 has, for example, a depth between 500 nm and 5 pm.

[0168] In order to obtain a face of interest 276.1 oriented (110), it is possible, for example, to etch a crystalline top layer 403 oriented (100) through openings 404.1 oriented parallel to the direction <001> with a 90°C solution containing 2 mol / L KOH and a surfactant, such as Triton X-100 with the molecular formula CsHi7C6H4(0C2H4)9-100H. The surfactant concentration can be between 20 ppm and 60 ppm. Thus, the face of interest 276.1 forms a 45° angle with the upper face 102.1. Alternatively, the solution can be replaced with an 80°C solution containing 25% by mass of TMAH and approximately 10 ppm by volume. of a surfactant such as a polyoxyalkylene alkyl ether, known by the nomenclature NCW-1002.

[0169] Similarly, it is possible to obtain a face of interest 276.1 making an angle of 54.74° with the upper face 102.1 by etching a crystalline upper layer 403 oriented (100) through openings 404.1 oriented parallel to the direction <110> .

[0170] In [Fig. 9C], the hard mask 404 is removed and a second mask 405 is formed in contact with the upper crystalline layer 403. The second mask 405 completely covers the first face of interest 276.1 of each trench 276 and completely exposes the opposite face 276.3 of each trench. Each portion of the second mask 405 opposite a trench 276 has an edge of interest at the upper face 102.1 parallel to the common direction.

[0171] In [Fig. 9D], only the portions of the upper crystalline layer 403 exposed by the second mask 405 are etched by anisotropic dry etching, meaning that the second mask 405 protects the upper crystalline layer 403 during etching. The upper crystalline layer 403 is etched along its entire height, preferably selectively with respect to the stop layer 402. The upper crystalline layer 403 thus structured has a second face of interest 276.2 opposite each first face of interest 276.1 corresponding to an edge of interest of the second mask 405. The second faces of interest 276.2 are here substantially orthogonal to the upper face 102.1. At the end of [Fig.9D], we obtain a reference mold 300 which has salient parts of geometric shapes and arrangements corresponding to the high index regions 260 of the extraction structures 61 .ij Each salient part extends from a first face of interest 276.1 to a second face of interest 276.2. The reference mold 300, or master mold, is intended for the manufacture of stamps 310 for the mass production of display devices 1 implementing nano-imprint lithography. .

[0172] In [Fig. 9E], a buffer 310 is made from the reference mold 300. A flexible layer, for example of an elastomer such as polydimethylsiloxane (PDMS), is formed on the reference mold 300 so as to be in contact with the protruding parts and the stop layer 402. The flexible layer constitutes the buffer 310. It comprises trenches 312, each shaped to correspond to a protruding part of the reference mold 300. Thus, each trench 312 comprises a first face 310.1 and a second face 310.2 corresponding respectively to the first face of interest 276.1 and the second face of interest 276.2 of a protruding part of the structured upper crystalline layer 403. The first face 310.1 is therefore smooth and of precise and reproducible orientation. The same is true of each inclined face. 275.1 corresponding to a first face 310.1 of the buffer 310 and of each inlet face 131 corresponding to the inclined face 275.1.

[0173] When the film 315 is a xerogel, the entrance faces 131 obtained with such a buffer 310 make an angle θ with the upper face of the substrate 100 typically between 30 degrees and 60 degrees, the heating curing step potentially impacting the volume of the protruding parts 275. When the film 315 is a UV adhesive, the angle θ is substantially equal to that which the first face of interest 276.1 makes with the upper face 102.1. Note that the step in [Fig. 9E] can be repeated several times to produce several buffers 310.

[0174] Figures 13A and 13D describe a second manufacturing process for the buffer 310 from the reference mold 300. This process leads to the production of a buffer 310 specifically designed for the nano-imprinting of extraction structures 61.ij as shown in [Fig. 3]. Only the differences with the first process are explicitly described.

[0175] The step in [Fig.13A] is identical to the step in [Fig.9A].

[0176] In [Fig. 13B], the second face of interest 276.2 is obtained directly; that is, each second face of interest 276.2 is a crystal plane of the upper crystalline layer 403 revealed by wet anisotropic etching. The first and second faces of interest 276.1, 276.2 are symmetrically equivalent crystal planes. Thus, the second face of interest 276.2 is also smooth and has a controlled angular orientation with respect to the upper face 102.1.

[0177] The steps in Figures 9C and 9D are omitted. In [Fig. 13C], the hard mask 404 is removed.

[0178] The step in [Fig. 13D] provides a buffer 310 according to a second possibility. It is identical to the step in [Fig. 9E]. At the end of this process, just like the first face 310.1, the corresponding second face 310.2 is also smooth and precisely oriented. The same is true of each face 275.2 opposite an inclined face 275.1 corresponding to a corresponding second face 310.2 of the buffer 310, and of the exit face 132 corresponding to the opposite face 275.2.

[0179] When the film 315 is a xerogel, the exit faces 132 obtained with such a buffer 310 make an angle y with the upper face of the substrate 100 typically between 30 degrees and 60 degrees, the heating curing step being able to impact the volume of the protruding parts 275. When the film 315 is a UV adhesive, the angle y is substantially equal to that which the first second face of interest 276.2 makes with the upper face 102.1. Note that the step in [Fig. 13D] can be repeated several times to produce several buffers 310 according to the second possibility.

[0180] Specific embodiments have just been described. Various variants and modifications will be apparent to those skilled in the art.

Claims

1. Demands Display device (1) for an image consisting of a set of pixels, comprising: • a substrate (100) equipped with an orthogonal coordinate system (xi, yi) and comprising a top face, • a lighting module (51), • a common electrode (105), • an array of addressing waveguides (115.j) optically coupled to the lighting module (51), extending parallel to an oriented axis xa, parallel to xi, • a set of addressing electrodes (2O5.i) extending parallel to an oriented axis ya, making an angle [3 with the axis yi, • a matrix of light extraction structures (61.ij); the display device (1) being such that • the common electrode (105), the extraction structure matrix (115.ij), the addressing waveguide assembly (115.j) and the addressing electrode assembly (205.i) extend successively from the upper face, in distinct planes parallel to the upper face, and such that • Each extraction structure (61-ij) of the matrix is ​​arranged at an intersection of an addressing waveguide (115.j) and an addressing electrode (205.i), and comprises: • an intermediate waveguide (130) made of a liquid crystal extending parallel to the upper face from an inlet face (131) of the intermediate waveguide (130) to an outlet face (132) of the intermediate waveguide (130), • the intermediate waveguide (130) being arranged between the addressing electrode (205.i) and the common electrode (105) so as to flip a refractive index of the liquid crystal along a polarization direction, from a first level to a second level strictly greater than the first level, when a variation of an electrical potential difference is applied between the addressing electrode (205.i) and the common electrode (105), and • the entrance face (131) making an angle y with the upper face of the substrate greater than or equal to 30 degrees and an angle equal to the angle [3 with the axis yi; • a high index region (260) extending from the exit face (132) of the intermediate waveguide (130), to the entrance face (131) of an adjacent extraction structure (61.i+lj) of the extraction structure matrix, the high index region (260) having a refractive index np strictly greater than the first level; the display device (1) being configured such that for each extraction structure (61.ij): • the first level, the second level and the arrangement of the intermediate waveguide (130) with respect to the addressing waveguide (115.j) are such that an optical mode originating from the illumination module (51) and guided in the addressing waveguide (115.j) is coupled, at least partially, by evanescent coupling from the addressing waveguide (115.j) to the intermediate waveguide (130), only when the refractive index of the liquid crystal is equal to the second level so as to generate an emitted beam (91) propagating in the high-index region (260) from the output face (132) to the input face (131) of the adjacent extraction structure (61.i+lj), and • the angle [3 is greater than or equal to a strictly positive minimum tilt angle beyond which the emitted beam (91) is reflected by total internal reflection on the input face (131) of the adjacent extraction structure (61.i+lj) into a reflected beam (92), to be extracted from the display device into a pixel beam (93) corresponding to the display of a pixel of the image.

2. Display device (1) of an image according to claim 1, wherein each addressing waveguide (115.j) of the assembly has a straight portion; the straight portions form a periodic array of period p along the axis yi; the addressing electrodes (205.i) intersect the addressing waveguides (115.j) at the straight portions; the matrix of light extraction structures (61.ij) is periodic of period Lc along the axis xa; and wherein Lc is strictly greater than p.

3. Display device (1) of an image according to claim 2, wherein Lc is such that for each extraction structure (61.ij), the intensity of the emitted beam (91) is greater than or equal to 80% of the intensity of the optical mode.

4. Display device (1) for an image according to claims 2 or 3, wherein the angle [3 is equal to ■ lit 1 y J

5. Display device (1) of an image according to any one of claims 1 to 4, wherein the difference between np and the second level is less than or equal to 0.05 in absolute value.

6. Display device (1) of an image according to any one of the preceding claims, wherein, for each addressing electrode (2O5.i), the intermediate waveguides (130) of the extraction structures (ôl.ij) located at the intersections between the addressing electrode (205.i) and the addressing waveguides (115.j) of the assembly are portions of a common planar waveguide (135).

7. Display device (1) of an image according to any one of the preceding claims, wherein the display device (1) further comprises a transparent hood (200) of optical index nv strictly less than np, each extraction structure (ôl.ij) of the matrix further comprises a hologram (250) opposite the entrance face (131) of the adjacent extraction structure (ôl.i+lj) configured to deflect the reflected beam (92) so as to reduce a propagation angle in the hood (200) of the reflected beam (92) with respect to a normal to a principal plane of the hood (200), and wherein each hologram (250) is housed in the hood (200) or on a face of the hood (200) opposite the high index region (260).

8. Image display device according to claim 7, wherein the hologram (250) is a reflected hologram.

9. Display device (1) of an image according to claim 8, wherein the angle y is less than or equal to 45 degrees.

10. Display device (1) of an image according to any one of the preceding claims, wherein the addressing waveguides (115.j) each comprise a separate optical modulator (52), arranged between the lighting module (51) and the light extraction structure matrix (61.ij).

11. Display device (1) of an image according to any one of the preceding claims, wherein the image is divided into several contiguous display areas, each corresponding to a set of adjacent addressing waveguides, optically coupled to a light source (53) separate from the lighting module (51).

12. Display device (1) of an image according to any one of the preceding claims, wherein the display device further comprises an addressing circuit (54) electrically connected to the addressing electrode assembly (205.i), the addressing electrode assembly (205.i) is divided into contiguous addressing zones, each consisting of a group of adjacent addressing electrodes (205.i), and wherein the addressing circuit (54) is configured to sequentially bias, one by one, the addressing electrodes (205.i) of each addressing zone so as to switch the refractive index of the liquid crystal of the corresponding intermediate waveguides (130) to the second level.

13. Display device (1) of an image according to claim 12, wherein the addressing areas all have the same number of addressing electrodes (205.i).

14. Display device (1) of an image according to claim 13, wherein the addressing circuit (54) is configured to simultaneously bias an addressing electrode (2O5.i) of each addressing zone.

15. Display device (1) of an image according to claim 14, wherein the addressing electrodes (2O5.i) are arranged such that each pair of simultaneously polarized addressing electrodes (2O5.i) belonging to contiguous addressing areas activates two extraction structures (61.ij) of the matrix located at two opposite ends of the matrix of extraction structures (ôl.ij) and opposite two adjacent addressing waveguides (115.j).

16. Display device (1) of an image according to any one of claims 12 to 15, wherein the addressing circuit (54) polarizes the addressing electrodes (205.i) one by one in the same sequence in all addressing areas.

17. Display device (1) of an image according to any one of the preceding claims, wherein the display device (1) further comprises an image conversion circuit configured to convert a standard image (41) consisting of an orthogonal matrix of pixels, into the image (42) to be displayed by the display device (1).

18. Display device (1) of an image according to claim 17, wherein the image (42) to be displayed and the standard image (41) have the same number of pixels to within 10%, and the same aspect ratio to within 10%.

19. Display system (10) comprising a first and a second display device (1) of an image, each according to any one of the preceding claims, arranged one above the other in such a way that pixel beams (93) of the first display device (1) pass through the matrix of addressing structures (ôl.ij) of the second display device (1).

20. Display system (10) according to claim 19, wherein the optical modes from the lighting modules (51) of the first and second display devices (1) respectively have different wavelengths, and the second display device (1) is according to any one of claims 7 to 9.

21. Display system (10) according to claim 20, wherein the display system (10) is configured to display a color image and the extraction structure matrices (ôl.ij) of the first and second display devices (1) are arranged relative to each other such that the pixel sets of the images to be displayed by the first and second display devices (1) are color sub-pixels of the color image.

22. A display system (10) comprising a first and a second image display device (1), each according to any one of claims 1 to 18, such that the respective addressing waveguide sets (115.j, 115.1) of the first and second display devices are interlaced in a display plane of the display system (10), parallel to the top face of the substrate (100), and each addressing electrode (205.i) of the first display device (1) is an addressing electrode (205.k) of the second display device (1).

23. Display system (10) according to claim 22, wherein the output faces (132) of the intermediate waveguides (115.j) of the first and second display devices (1) make an angle with the top face of the substrate (100) equal to y, and an angle with the axis yi equal to [3.

24. Display system (10) according to any one of claims 22 or 23, wherein the first and second display devices (1) are according to claim 6, and each common planar waveguide (135) of the first display device (1) is a common planar waveguide (135) of the second display device (1).

25. Method of manufacturing an image display device (1) according to any one of claims 1 to 18, comprising the following steps: • supplying a lower part (101) of the display device (1) comprising the addressing waveguide assembly (115).j), • supply of a hood (200), • formation of a structured layer (270) on the lower part (101) or the hood (200), by a nano-imprint lithography process, such that the structured layer (270) has protruding parts (275) of identical heights, equal to a common height, • formation of an adhesive bead (285) on the lower part (101) or on the hood (200), such that the adhesive bead (285) has a thickness greater than or equal to the common height, delimits a central region, and has a through lateral opening communicating with the central region, • transfer of the hood (200) onto the lower part (101) so that the structured layer (270) acts as a spacer fixing a gap between the hood (200) and the. lower part (101), and delimits continuous volumes in the central region, • bonding of the hood (200) to the lower part (101) by the glue bead (285), • introduction of a liquid crystal into each continuous volume through the through-side opening to obtain the intermediate waveguide (130) of each extraction structure (ôl.ij).

26. A manufacturing method according to claim 25, wherein the nano-imprint lithography method comprises the following substeps: • forming a reference mold (300) comprising the following tasks: • supplying a master substrate (102) of crystalline silicon, • anisotropic wet etching of trenches (276) in the master substrate (102) from an upper face (102.1) of the master substrate (102) so as to coincide a face, referred to as a face of interest (276.1), of each trench with a predetermined crystal plane of the silicon, • forming a pad (310) by molding onto the reference mold (300), • forming the structured layer (270) by molding a film (315) with the pad (310) such that faces (310.1) of the pad corresponding to faces of interest (276.1) form the entry faces (131) of the structures extraction (ôl.ij) of the matrix.

27. ​​A manufacturing method according to claim 26, wherein the pad (310) is flexible, the film (315) is a UV adhesive and the formation of the structured layer (270) implements UV illumination of the UV adhesive prior to removal of the pad (310).

28. A manufacturing method according to claim 27, wherein the UV glue has a refractive index equal to np, and the difference between np and the second level is less than or equal to 0.05 in absolute value.

29.

30. A manufacturing process according to any one of claims 25 to 28, wherein the manufacturing process further comprises the following steps: • formation of a hologram matrix (250) comprising the following substeps: • supply of a backing plate (201) and a holographic film (251) on one contact face of the backing plate (201), • transfer of a plate (360) with flat and parallel faces onto the holographic film (251), • projection of a prism (350) onto a face of the plate (360) opposite the holographic film (251), • repetition of the following sequence: • illumination of an area of ​​the holographic film (251) by a reference beam (95) making a predetermined angle of incidence with an entrance face of the prism (350) and an object beam (96), coherent with the reference beam (95), making an angle, called the display angle, with a normal to the contact face, the angle of incidence being predetermined so that the reference beam (95) makes an angle with the contact face equal to an angle of the reflected beam (92) of each extraction structure (61.ij) with the upper face of the substrate (100), • relative displacement of the prism by one step of the hologram matrix (250); • transfer of the holographic film (251) onto the display device (1) so as to place each hologram (250) opposite an input face (131) of an extraction structure (61.ij). Manufacturing method according to claim 29, wherein the display angle varies from one iteration to another of the sequence. 43

31. A manufacturing method according to any one of claims 25 to 30, wherein the master substrate has an (100) orientation and the predetermined crystal plane is a (111) or (110) plane.

32. A manufacturing method according to any one of claims 25 to 30, wherein the master substrate is a silicon-on-insulator type plate.

Images