Photonic integrated circuit

Abstract

Photonic Integrated Circuit This description relates to a photonic integrated circuit (700) comprising: – a semiconductor substrate (101); – an active stack located on the side of a first face of the semiconductor substrate (101) and comprising: a first layer of a first material having a first refractive index covering the first face of the semiconductor substrate (101); a second layer (105) of a second material having a second refractive index covering the first layer; and a third layer (107) of the first material covering the second layer (105); – at least one photonic component (111) formed in the active stack;and – at least one peripheral isolation structure (713) comprising an optically reflective surface (713R) at least partially surrounding said at least one photonic component (111) and extending, from a face of the third layer (107) opposite the semiconductor substrate (101), into the active stack. Figure for the abstract: Fig. 7A;

Description

Title of the invention: Photonic integrated circuit technical field

[0001] This description relates, in general, to photonic integrated circuits and, more particularly, to quantum photonic integrated circuits, in which it is desirable to achieve the lowest possible levels of optical noise. Prior art

[0002] The development of quantum technologies should enable increased performance and the introduction of new functionalities compared to existing communication devices, algorithms, and protocols. In particular, quantum technologies make it possible to secure communications by taking advantage of the impossibility theorem for quantum cloning. Quantum technologies also allow for increased computing power through the use of quantum bits, or qubits, instead of classical bits. To make these technologies accessible on a large scale and at a lower cost, it would be desirable to have photonic integrated circuits in which qubits can be produced, processed, and detected.

[0003] Quantum photonic integrated circuits offer a promising avenue for implementing the aforementioned technologies. For example, silicon- or silicon nitride-based circuits, by exploiting nonlinear material effects, can produce quantum states of radiation, such as single-photon pairs. In practice, continuous laser radiation from a laser source called a "pump" is directed into a waveguide, within which the radiation is tightly confined so that the radiation-matter interaction is sufficiently intense to cause nonlinear phenomena. The radiation is more precisely absorbed, and, in accordance with the laws of conservation of energy and momentum, quantum radiation is produced at different wavelengths.Entangled photon pairs, serving as the building blocks for various quantum photonics applications using qubits, can thus be produced. The photons are then filtered and demultiplexed so that they can be directed, according to their wavelength, to separate waveguides. The use of quantum photonic integrated circuits makes it possible to create and process quantum states from these photons, which are then analyzed by integrated or remote single-photon detectors, depending on the application.

[0004] Working with single photons implies that any stray radiation present inside the photonic integrated circuit is likely to interfere with its performance. The presence of stray radiation limits, in particular, the extinction ratio (ER), which is the ratio of intensities between transmitted and blocked radiation, of rejection filters used to suppress laser radiation injected by a source into a photonic integrated circuit. Furthermore, stray radiation causes optical crosstalk in demultiplexers used to sort photons according to their wavelength. This increases the transfer of unwanted signals in the demultiplexer channels. Optical noise present in a photonic integrated circuit can also saturate single-photon detectors within the circuit.

[0005] The suppression of parasitic radiation in photonic integrated circuits thus constitutes a key step towards the development of fully integrated and high-performance quantum technologies.

[0006] Several publications have highlighted the presence of parasitic radiation in photonic circuits. In particular, parasitic radiation has been detected in photonic circuits in the form of optical background noise present in high extinction ratio filters used to suppress excitation laser radiation from a source and to allow quantum radiation produced by the circuit to pass through.

[0007] A photonic circuit for producing and filtering single photon pairs typically comprises an annular optical resonator, including an optical cavity formed by a ring-shaped waveguide to enhance the nonlinear phenomena that give rise to the production of entangled photon pairs, and a high extinction ratio filter generally comprising several cascaded filtering stages. In theory, increasing the number of filtering stages should increase the filter's extinction ratio. However, in practice, the extinction ratio is capped due to scattering of the excitation laser radiation within the photonic circuit, producing optical background noise that limits the filtering performance.

[0008] To try to overcome this problem, the use of two separate photonic chips was considered: a first chip designed to receive the laser radiation from the excitation source and to produce entangled photon pairs, and a second chip designed to process (filter and demultiplex) the photon pairs from the first chip. However, this architecture is not satisfactory because it has the drawback of introducing coupling losses at the interface between the first and second photonic chips. In particular, one of the photons in each pair can be lost due to the interface between the chips, thus leading to a degradation of the coincidence count rate by the second chip. Summary of the invention

[0009] There is a need to overcome all or part of the drawbacks of existing photonic integrated circuits. In particular, it would be desirable to reduce the presence of parasitic radiation in photonic integrated circuits.

[0010] For this purpose, one embodiment provides for a photonic integrated circuit comprising: - a semiconductor substrate; - an active stack located on the side of a first face of the semiconductor substrate and comprising: a first layer of a first material having a first refractive index covering the first face of the semiconductor substrate; a second layer of a second material having a second refractive index coating the first layer; and a third layer in the first material coating the second layer; - at least one photonic component formed in the active stack; and - at least one optically absorbing peripheral isolation wall surrounding at least partially said at least one photonic component and extending, from a face of the third layer opposite the semiconductor substrate, into the first layer.

[0011] According to one embodiment, said at least one peripheral insulation wall passes through the first layer.

[0012] According to one embodiment, said at least one peripheral insulation wall penetrates the semiconductor substrate.

[0013] According to one embodiment, said at least one peripheral insulation wall: - presents, when viewed from above, a C-shaped form; or - comprises two parts, each having an L-shaped form when viewed from above.

[0014] According to one embodiment, said at least one peripheral insulation wall comprises a trench having sides and a bottom coated with a layer of optically absorbing material.

[0015] According to one embodiment, said at least one peripheral insulation wall is made of a third material chosen from: - carbon; - germanium; - an absorbent polymer - amorphous silicon; - doped polycrystalline silicon; - heavily doped crystalline silicon; - a material comprising absorbing nanoparticles; and - a metal or a metal alloy.

[0016] In addition, one embodiment provides for a photonic integrated circuit comprising: - a semiconductor substrate; - an active stack located on the side of a first face of the semiconductor substrate and comprising: a first layer of a first material having a first refractive index covering the first face of the semiconductor substrate; a second layer of a second material having a second refractive index coating the first layer; and a third layer in the first material coating the second layer; - at least one photonic component formed in the active stack; and - an optically absorbing layer located directly above said at least one photonic component and in contact with a face of the first layer opposite the second layer.

[0017] According to one embodiment, the optically absorbing layer is made of a third material chosen from: - carbon; - germanium; - an absorbent polymer - amorphous silicon; - doped polycrystalline silicon; - heavily doped crystalline silicon; - a material comprising absorbing nanoparticles; and - a metal or a metal alloy.

[0018] According to one embodiment, the circuit further comprises at least one optically absorbing peripheral insulation wall surrounding at least partially said at least one photonic component and extending, from a face of the third layer opposite the semiconductor substrate, into the first layer.

[0019] According to one embodiment, said at least one peripheral insulation wall passes through the first layer.

[0020] According to one embodiment, said at least one peripheral insulation wall penetrates the semiconductor substrate.

[0021] In addition, one embodiment provides for a photonic integrated circuit comprising: - a semiconductor substrate; - an active stack located on the side of a first face of the semiconductor substrate and comprising: a first layer of a first material having a first refractive index covering the first face of the semiconductor substrate; a second layer of a second material having a second refractive index coating the first layer; and a third layer in the first material coating the second layer; - at least one photonic component formed in the active stack; and - at least one peripheral isolation structure comprising an optically reflective surface surrounding at least partially said at least one photonic component and extending, from a face of the third layer opposite the semiconductor substrate, into the active stack.

[0022] According to one embodiment, said at least one peripheral insulation structure is filled with air and has, in top view, an inclined side, relative to a direction of propagation of radiation in said at least one photonic component, at an angle allowing total reflection of the radiation.

[0023] According to one embodiment, said at least one peripheral insulation structure comprises sides coated with a reflective material.

[0024] According to one embodiment, the semiconductor substrate is absent under said at least one photonic component.

[0025] According to one embodiment, the semiconductor substrate is absent under said at least one peripheral insulation structure.

[0026] According to one embodiment, the second refractive index is strictly greater than the first refractive index.

[0027] According to one embodiment, the first material is silicon oxide and the second material is silicon.

[0028] According to one embodiment, said at least one photonic component is selected from: - an inlet surface or an outlet surface of a waveguide; - a filter; - a resonator; - a demultiplexer; and - a photon detector.

[0029] According to one embodiment, the circuit further comprises an optically absorbing layer located directly above said at least one photonic component and in contact with a face of the first layer opposite the second layer.

[0030] According to one embodiment, the optically absorbing layer is located on and in contact with the first face of the semiconductor substrate.

[0031] According to one embodiment, the circuit further comprises a cavity extending from a second face of the semiconductor substrate opposite the first face to the first face of the semiconductor substrate and located directly above said substrate. minus a photonic component, the optically absorbing layer coating a bottom of the cavity. Brief description of the drawings

[0032] These features and advantages, as well as others, will be described in detail in the following description of particular embodiments, given by way of non-limiting example, in relation to the accompanying figures, among which:

[0033] [Fig.1A] is a schematic and partial top view of a photonic integrated circuit according to one embodiment;

[0034] [Fig.1B] is a side and cross-sectional view along plane BB of [Fig.1A] of the photonic integrated circuit of [Fig.1A];

[0035] [Fig.1C] is a side and cross-sectional view along plane BB of [Fig.1A] of a variant of the photonic integrated circuit of figures IA and IB;

[0036] [Fig.2] is a schematic and partial top view of a photonic integrated circuit according to one embodiment;

[0037] [Fig.3] is a schematic and partial side and cross-sectional view of a photonic integrated circuit according to one embodiment;

[0038] [Fig.4] is a schematic and partial side and cross-sectional view of a photonic integrated circuit according to one embodiment;

[0039] [Fig.5] is a schematic and partial side and cross-sectional view of a photonic integrated circuit according to one embodiment;

[0040] [Fig.6] is a schematic and partial side and cross-sectional view of a photonic integrated circuit according to one embodiment;

[0041] [Fig.7A] is a schematic and partial top view of a photonic integrated circuit according to one embodiment;

[0042] [Fig.7B] is a side and cross-sectional view along plane BB of [Fig.7A] of the photonic integrated circuit of [Fig.7A];

[0043] [Fig.8] is a schematic and partial top view of a photonic integrated circuit according to one embodiment;

[0044] [Fig.9] is a schematic and partial top view of a photonic integrated circuit according to one embodiment;

[0045] [Fig. 10] is a schematic and partial perspective view of a photonic integrated circuit according to one embodiment;

[0046] [Fig. 1 1] is a schematic and partial perspective view of a photonic integrated circuit according to one embodiment; and

[0047] [Fig. 12] is a schematic and partial perspective view of a photonic integrated circuit according to one embodiment. Description of the implementation methods

[0048] The same elements have been designated by the same reference numerals in the different figures. In particular, the structural and / or functional elements common to the different embodiments may have the same reference numerals and may have identical structural, dimensional and material properties.

[0049] For the sake of clarity, only the steps and elements necessary for understanding the described embodiments have been shown and are detailed. In particular, the various applications of photonic integrated circuits have not been detailed, as the described embodiments are compatible with all or most applications implementing photonic integrated circuits, possibly with adaptations within the grasp of a person skilled in the art upon reading this description. Furthermore, the various photonic components of the photonic integrated circuits have not been detailed, as the embodiments in this description are compatible with all or most known photonic components.

[0050] Unless otherwise specified, when referring to two elements connected together, this means directly connected without intermediate elements other than conductors, and when referring to two elements coupled together, this means that these two elements can be connected or linked through one or more other elements.

[0051] In the following description, when reference is made to absolute position qualifiers, such as the terms "front", "back", "top", "bottom", "left", "right", etc., or relative position qualifiers, such as the terms "above", "below", "superior", "inferior", etc., or to orientation qualifiers, such as the terms "horizontal", "vertical", etc., reference is made, unless otherwise specified, to the orientation of the figures.

[0052] Unless otherwise specified, the expressions "approximately", "about", "substantially", and "in the order of" mean to within 10% or 10°, preferably to within 5% or 5°.

[0053] Unless otherwise specified, the expression "in contact with" means "in mechanical contact with".

[0054] In the following description, the terms "insulating" and "conducting" mean, unless otherwise specified, electrically insulating and electrically conductive respectively.

[0055] The term "reflectance of a layer" refers to the ratio of the flux of radiation reflected by the layer to the flux of incident radiation. Furthermore, the term "transmittance of a layer" refers to the ratio of the flux of radiation transmitted by the layer to the flux of incident radiation. In the following description, a layer is said to absorb radiation when the sum of its reflectance and transmittance is, for that radiation, strictly less than 50%, preferably less than or equal to 25%, and more preferably less than or equal to 10%. The preceding definition is not limited to the case of a layer, but applies more generally to any element likely to be exposed to radiation, for example a wall, a substrate, a region, a stack of several layers, etc.

[0056] In a photonic integrated circuit, parasitic radiation takes the form of background noise caused by photons escaping from photonic components such as high extinction ratio filters, waveguides associated with these components, etc. The parasitic radiation is then scattered throughout the circuit, some of this radiation being collected, for example, by an output waveguide.

[0057] In practice, parasitic radiation comes from two types of losses: coupling losses and propagation losses.

[0058] Coupling losses correspond to a difference between input radiation, injected into a photonic component, and output radiation, transmitted by the photonic component. In the case of a waveguide, a portion of the input radiation that is not coupled within the waveguide escapes from the waveguide and is then scattered throughout the integrated circuit, the circuit generally comprising a stack of layers transparent to the radiation of interest. At each interface, parasitic radiation is then partially reflected and transmitted, leading to a change in its propagation direction. Stray radiation is thus scattered throughout the circuit along unpredictable propagation paths.

[0059] Propagation losses are caused by radiation initially confined within the waveguide but which manages to escape. Radiation confined within a waveguide propagates according to specific modes, given by Maxwell's equations. The shape of the modes supported by the waveguide, that is, the amplitude of the electromagnetic field in the waveguide cross-section, depends on the chosen geometry. For a rectangular silicon single-mode waveguide, the mode is essentially confined within the waveguide but includes a portion of the field propagating on the waveguide surface. The surface roughness of the waveguide, manufacturing defects at the interface between the core and the cladding, and the radius of curvature of the waveguide tend to produce propagation losses.

[0060] The parasitic radiation, caused by the two loss phenomena described above, propagates throughout the photonic integrated circuit.

[0061] One objective of the described embodiments is to reduce the transmission of parasitic radiation in a photonic integrated circuit as much as possible. To this end, one or more sensitive photonic components of the circuit are isolated from one or more potential sources of stray radiation by absorbing unwanted photons produced by the source(s) and / or by controlling reflection paths taken by these photons.

[0062] Fig. 1A is a schematic and partial top view of a photonic integrated circuit 100 according to one embodiment. Fig. 1B is a side and cross-sectional view along plane BB of Fig. 1A of the photonic integrated circuit 100 of Fig. 1A.

[0063] In the illustrated example, the photonic integrated circuit 100 comprises a semiconductor substrate 101. The semiconductor substrate 101 is, for example, a wafer or a piece of wafer made of a semiconductor material, for example silicon.

[0064] In the illustrated example, the photonic integrated circuit 100 further comprises a layer 103 covering an upper face 101T of the semiconductor substrate 101. In the example shown, the layer 103 is more precisely located on and in contact, by its lower face, with the upper face 101T of the semiconductor substrate 101. The layer 103 is made of a material having a refractive index ni. The layer 103 is, for example, an insulating layer, for example, made of silicon dioxide. By way of example, the layer 103 has a thickness on the order of a few micrometers, for example, between 2 and 3 pm.

[0065] In the illustrated example, the photonic integrated circuit 100 further comprises a layer 105 covering a portion of the upper face of layer 103. In the example shown, layer 105 is more precisely situated on and in contact, by its lower face, with a portion of the upper face of layer 103. Layer 105 is made of a material having a refractive index n2 strictly greater than the refractive index ni. Layer 105 is, for example, a semiconductor layer, for example made of silicon, or an insulating layer, for example made of a nitride such as silicon nitride or gallium nitride.

[0066] By way of example, the semiconductor substrate 101 and the layers 103 and 105 are derived from a SOI (Silicon On Insulator) type substrate, layer 103 corresponding in this case to a buried oxide layer (BOX) of the SOI substrate. In this case, layers 103 and 105 are made of silicon oxide and silicon, respectively.

[0067] In the illustrated example, the photonic integrated circuit 100 further comprises a layer 107 covering the top face and sides of layer 105. Layer 107 also covers portions of the top face of layer 103 not covered by layer 105. In the example shown, layer 107 is more precisely situated on and in contact, by its lower face, with the top face and sides of layer 105 and with the portions of the top face of layer 103 not covered by layer 105. Layer 107 is, for example, made of the same material as layer 103, that is to say, the material with refractive index ni. Layer 107 is, for example, an insulating layer, for example made of silicon oxide.

[0068] By way of example, layers 103, 105 and 107 are part of an active stack located on the side of the top face 101T of the semiconductor substrate 101.

[0069] In the illustrated example, the photonic integrated circuit 100 further comprises a layer 109 covering a lower face 101B of the semiconductor substrate 101. In the example shown, the layer 109 is more precisely located below and in contact, by its upper face, with the lower face 101B of the semiconductor substrate 101. The layer 109 is, for example, an insulating layer, for example made of silicon oxide.

[0070] In the illustrated example, layer 105 is part of a waveguide 111. In this example, layer 105 forms a core of the waveguide 111. By way of example, the waveguide 111 is formed by photolithography followed by etching of layer 105, which initially covers the entire upper surface of the underlying layer 103. The waveguide 111 includes, for example, at one of its ends (for example, the left end, in the orientation of [Fig. 1A]), an input surface for receiving an excitation signal, for example, laser radiation from a laser source, or pump. The input surface of the waveguide 111 is, for example, designed to receive a laser beam at an angle of incidence relative to the upper surface 101T of the semiconductor substrate 101, that is, an angle of incidence not parallel to the surface 101T. The waveguide 111 includes, for example, furthermore, at its other end (the right end, in the orientation of the [Fig.lA]), an output surface intended to transmit radiation outwards from the photonic integrated circuit 100. The output surface of the waveguide 111 is, for example, intended to emit radiation in a direction inclined relative to the upper face 101T of the substrate 101. As an example, the input and output surfaces of the waveguide 111 allow for so-called "adiabatic" coupling.

[0071] The inlet and outlet surfaces of the waveguide 111 each have, in top view, a generally triangular shape. In the example shown in [Fig. 1B], the inlet surface of the waveguide 111 comprises a periodic structure consisting of a plurality of regularly spaced trenches of substantially constant width and constant pitch. In this example, the trenches of the inlet surface of the waveguide 111 extend into the layer 105, from its upper face, to a depth less than the thickness of the layer 105. By way of example, the outlet surface of the waveguide 111 has a structure similar or identical to that of the inlet surface.

[0072] The waveguide 111 further comprises, for example, a non-straight central portion interposed between its inlet and outlet surfaces. In the example shown, the central portion of the waveguide 111 has an S-shaped shape when viewed from above. This This example is not, however, limiting. As an alternative, one or more photonic components, for example formed in the active stack comprising layers 103, 105 and 107, may be provided between the inlet and outlet surfaces of the waveguide 111. As an example, the photonic component(s) may be chosen from: a resonator, a filter, a demultiplexer, a photon detector, etc.

[0073] According to one embodiment, the photonic integrated circuit 100 further comprises at least one peripheral isolation wall 113. In the illustrated example, the photonic integrated circuit 100 comprises two peripheral isolation walls 113 partially surrounding the inlet and outlet surfaces, respectively, of the waveguide 111. However, this example is not limiting and the photonic integrated circuit 100 may, alternatively, comprise any number of peripheral isolation walls 113, each wall at least partially surrounding any photonic component, for example, different from an inlet or outlet surface of a waveguide.

[0074] According to one embodiment, each peripheral insulation wall 113 extends from the upper face of the layer 107 into the layer 103. In the example illustrated in [Fig. 1B], the peripheral insulation wall 113, which partially surrounds the inlet surface of the waveguide 111, passes through the layer 103 through its entire thickness and extends vertically into the thickness of the semiconductor substrate 101. This example is not, however, limiting. Alternatively, the peripheral insulation wall 113 may pass through the layer 103 and terminate at and in contact with the upper face 101T of the semiconductor substrate 101, or penetrate the thickness of the layer 103 without passing through it. In the example shown, each peripheral insulation wall 113 has a height dl on the order of a micrometer, for example, approximately 5 pm.Each perimeter insulation wall 113 also has a width wl on the order of a few tens of micrometers, for example equal to about 20 pm. .

[0075] Each peripheral insulation wall 113 can, as illustrated in [Fig.1B], have a flared cross-section, the wall 113 being wider in the upper part, i.e. in the vicinity of the upper face of the layer 107, than in the lower part, i.e. in the vicinity of the upper face 101T of the semiconductor substrate 101. In this case, the width wl of the peripheral insulation wall 113 corresponds for example to the maximum width of the wall 113.

[0076] Each peripheral isolation wall 113 has, for example, in top view, a C shape surrounding the inlet or outlet surface of the waveguide 111. However, this example is not limiting and each peripheral isolation wall 113 may, as an alternative, have, in top view, any shape allowing to best surround a photonic component of the photonic integrated circuit 100.

[0077] The peripheral insulation walls 113 are optically absorbing. The peripheral insulation walls 113 absorb, for example, more particularly radiation having a wavelength located within a range of emission wavelengths from a laser source irradiating the waveguide 111.

[0078] By way of example, each perimeter insulation wall 113 is obtained by forming a trench extending from the upper face of layer 107 down into layer 103 and then depositing a layer of optically absorbing material in the trench. In the example illustrated in [Fig. 1B], the absorbing material fills the trench previously formed from the upper face of the structure.

[0079] The material for each perimeter insulation wall 113 is, for example, chosen from: - carbon; - germanium; - an absorbent polymer - amorphous silicon, for example in a case where the range of wavelengths to be absorbed is located around 925 nm; - doped polycrystalline silicon, for example in a case where the range of wavelengths to be absorbed is located around 1550 nm; - heavily doped crystalline silicon; - a material comprising absorbing nanoparticles that can be surrounded by ligands, for example obtained by evaporation of a solvent contained in a colloidal solution of absorbing nanoparticles; and - a metal or a metallic alloy.

[0080] One advantage of the photonic integrated circuit 100 lies in the fact that the presence of the optically absorbing peripheral isolation walls 113 surrounding the input and output surfaces of the waveguide 111 makes it possible to isolate and protect other photonic components of the circuit 100 not detailed in Figures IA and IB. This limits or prevents the propagation of parasitic radiation in the photonic integrated circuit 100, particularly compared to a circuit similar to the circuit 100 but lacking isolation walls, in which parasitic radiation can propagate into layer 103, layer 107 and / or the semiconductor substrate 101 due to the absence of the peripheral isolation walls 113.

[0081] The peripheral isolation wall 113 surrounding the inlet surface of the waveguide 111 reduces the amount of radiation injected directly into the layers 103 and 107 and into the semiconductor substrate 101, and which can be guided by these elements to the outlet surface of the waveguide 111. The peripheral isolation wall 113 surrounding the outlet surface of the waveguide 111 limits the amount of parasitic radiation escaping from the outlet of the waveguide. 111, parasitic radiation from losses in the waveguide 111 and / or other photonic components of the photonic integrated circuit 100 not shown in figures IA and IB.

[0082] [Fig. 1C] is a side and cross-sectional view along plane BB of [Fig. 1A] of a variant 100' of the photonic integrated circuit 100 of Figures 1A and 1B. The photonic integrated circuit 100' of [Fig. 1C] includes elements common to the photonic integrated circuit 100 of Figures IA and 1B. These common elements will not be detailed again below.

[0083] The photonic integrated circuit 100' differs from the photonic integrated circuit 100 primarily in that, in the case of the photonic integrated circuit 100', each peripheral insulating wall 113 comprises a trench 151 whose sides and bottom are coated with a layer 153 of optically absorbing material. In the example shown, the trench 151 extends from the upper face of the layer 107 into the layer 103. In this example, the layer 153 does not completely fill the trench 151.

[0084] Figure 2 is a schematic, partial top view of a photonic integrated circuit 200 according to one embodiment. The photonic integrated circuit 200 of Figure 2 includes elements common to the photonic integrated circuit 100 of Figures IA and IB. These common elements will not be described in detail again below.

[0085] The photonic integrated circuit 200 differs from the photonic integrated circuit 100 primarily in that it comprises a waveguide 211 having input and output surfaces that, in top view, have a tapered shape. Analogously to the waveguide 111 of the photonic integrated circuit 100, the waveguide 211 of the photonic integrated circuit 200 includes, for example, a core formed in layer 105.

[0086] Unlike the waveguide 111, whose inlet and outlet surfaces are, for example, respectively intended to receive and emit radiation in directions inclined with respect to the upper face 101T of the semiconductor substrate 101, the inlet and outlet surfaces of the waveguide 211 are, for example, respectively intended to receive and emit radiation in directions substantially parallel to the upper face 101T of the semiconductor substrate 101. By way of example, the inlet and outlet surfaces of the waveguide 211 allow for a so-called "butt coupling".

[0087] Analogously to the waveguide 111 of the photonic integrated circuit 100, the input and output surfaces of the waveguide 211 of the photonic integrated circuit 200 are each surrounded by an optically absorbing peripheral isolation wall 213. In the example illustrated in [Fig. 2], each peripheral isolation wall 213 comprises two parts each having, in top view, an L shape. The two parts of each peripheral insulation wall 213 are located on either side of a direction of radiation propagation inside the waveguide 211.

[0088] In a manner analogous or identical to the perimeter insulation walls 113, each of the perimeter insulation walls 213 extends from the upper face of the layer 107 to the layer 103. Furthermore, each perimeter insulation wall 213 may have a solid structure, for example as previously described in relation to [Fig.1B], or a hollow structure comprising an optically absorbing layer covering the sides and bottom of a trench, for example as previously described in relation to [Fig.1C].

[0089] Figure 3 is a schematic, partial side and cross-sectional view of a photonic integrated circuit 300 according to one embodiment. The photonic integrated circuit 300 of Figure 3 includes elements common to the photonic integrated circuit 100 of Figures IA and IB. These common elements will not be described in detail again below.

[0090] According to one embodiment, the photonic integrated circuit 300 comprises an optically absorbing layer 301 located directly above the input surface of the waveguide 111. The optically absorbing layer 301 is interposed between the semiconductor substrate 101 and the layer 103. More specifically, in the example shown, the optically absorbing layer 301 is in contact, via its lower face, with the upper face 101T of the semiconductor substrate 101. Furthermore, in this example, the optically absorbing layer 301 is in contact, via its upper face, with the lower face of the layer 103.

[0091] By way of example, the optically absorbing layer 301 is made of a material selected from: - carbon; - germanium; - an absorbent polymer - amorphous silicon, for example in a case where the range of wavelengths to be absorbed is located around 925 nm; - doped polycrystalline silicon, for example in a case where the range of wavelengths to be absorbed is located around 1550 nm; - heavily doped crystalline silicon; - a material comprising absorbing nanoparticles that can be surrounded by ligands, for example obtained by evaporating a solvent contained in a colloidal solution of absorbing nanoparticles; and - a metal or a metal alloy.

[0092] The optically absorbing layer 301 covers, for example, the entire upper face 101T of the semiconductor substrate 101. As an example, the optically absorbing layer 301 is deposited on the entire face 101T of the substrate 101 prior to the deposition of the layers 103, 105 and 107.

[0093] In the example shown, a laser radiation source 303, symbolized by a rectangle in [Fig.3], emits laser radiation 305 towards the input surface of the waveguide 111. In the illustrated example, the laser radiation 305 is emitted by the source 303 in a direction inclined with respect to the upper face 101T of the semiconductor substrate 101.

[0094] In the illustrated example, the photonic integrated circuit 300 is, compared to the photonic integrated circuit 100 of Figures IA and IB, devoid of the peripheral isolation walls 113. This example is not limiting, however, the photonic integrated circuit 300 may, as an alternative, include peripheral isolation walls similar or identical to the peripheral isolation walls 113.

[0095] One advantage of the photonic integrated circuit 300 is that the presence of the optically absorbing layer 301 directly above the input surface of the waveguide 111 limits or avoids the propagation of parasitic radiation in the structure of the photonic integrated circuit 300, in particular in the semiconductor substrate 101 and in the layer 103.

[0096] Figure 4 is a schematic, partial side and cross-sectional view of a photonic integrated circuit 400 according to one embodiment. The photonic integrated circuit 400 of Figure 4 includes elements common to the photonic integrated circuit 300 of Figure 3. These common elements will not be described in detail again below.

[0097] The photonic integrated circuit 400 differs from the photonic integrated circuit 300 in that, in the case of the circuit 400, the optically absorbing layer 301 located below and in contact with the layer 103 has sides and a bottom of a cavity 401, or trench, extending from the lower face of the layer 109 to the layer 103. In the example shown, the cavity 401 passes through the semiconductor substrate 101 and is interrupted within the thickness of the layer 103. This example is not, however, limiting; the cavity 401 may, alternatively, not penetrate the layer 103.

[0098] The cavity 401, for example, has a substantially rectangular shape when viewed from above. This example is not limiting, however; the cavity 401 may more generally have any shape when viewed from above, for example a polygonal shape other than rectangular — for example square, triangular, hexagonal, etc. — or a rounded shape — for example oval, circular, etc.

[0099] The cavity 401 has, for example, a depth d2. As an example, the depth d2 of the cavity 401 is on the order of several hundred micrometers, for example equal to about 700 pm.

[0100] Furthermore, the cavity 401 has a minimum lateral dimension w2. The cavity 401 can, as illustrated in [Fig. 4], have a flared cross-section, the cavity 401 being wider in its lower part, i.e. in the vicinity of the lower face 101B of the semiconductor substrate 101, than in its upper part, i.e. in the vicinity of the upper face 101T of the semiconductor substrate 101. In this case, the dimension w2 of the cavity 401 corresponds, for example, to the width of the bottom of the cavity 401. As an example, the dimension w2 of the cavity 401 is on the order of several tens or a hundred micrometers, for example, equal to about 100 pm.

[0101] Figure 5 is a schematic, partial side and cross-sectional view of a photonic integrated circuit 500 according to one embodiment. The photonic integrated circuit 500 of Figure 5 includes elements common to the photonic integrated circuit 300 of Figure 3. These common elements will not be described in detail again below.

[0102] The photonic integrated circuit 400 differs from the photonic integrated circuit 300 in that it includes, instead of the waveguide 111, the waveguide 211.

[0103] In the example shown, the laser radiation source 303 emits the laser radiation 305 towards the input surface of the waveguide 211. In the illustrated example, the laser radiation 305 is emitted by the source 303 in a direction substantially parallel to the upper face 101T of the semiconductor substrate 101.

[0104] The photonic integrated circuit 500 comprises, below the input surface of the waveguide 211, a cavity 501 whose walls are coated with the optically absorbing layer 301. The cavity 501 is, for example, analogous to the cavity 401. Unlike the cavity 401, which is laterally bordered on all its faces by the semiconductor substrate 101, the cavity 501 comprises at least one side opening onto a lateral face of the structure of the photonic integrated circuit 500.

[0105] In the example shown, the cavity 501 has a depth d3 and a minimum lateral dimension w3. The depth d3 and the dimension w3 of the cavity 501 have, for example, values ​​identical to those indicated above for the depth d2 and the minimum lateral dimension w2 of the cavity 401.

[0106] Figure 6 is a schematic, partial side and cross-sectional view of a 600 photonic integrated circuit according to one embodiment. The 600 photonic integrated circuit of Figure 6 includes elements common to the 400 photonic integrated circuit of Figure 4. These common elements will not be described in detail again below.

[0107] The photonic integrated circuit 600 differs from the photonic integrated circuit 400 in that it further comprises the optically absorbing peripheral isolation wall 113 surrounding the input surface of the waveguide 111.

[0108] One advantage of the 600 photonic integrated circuit is that, compared to the 100 and 300 photonic integrated circuits, it allows for greater limitation of the propagation of parasitic radiation in the structure.

[0109] Although layer 109 has not been shown in [Fig.6], the 600 photonic integrated circuit can of course include layer 109 on the side of the lower face 101B of the semiconductor substrate 101.

[0110] Figure 7A is a schematic, partial top view of a photonic integrated circuit 700 according to one embodiment. Figure 7B is a side and cross-sectional view along plane BB of Figure 7A of the photonic integrated circuit 700 of Figure 7A. The photonic integrated circuit 700 of Figures 7A and 7B includes elements common to the photonic integrated circuit 100 of Figures IA and 1B. These common elements will not be described in detail again below.

[0111] The photonic integrated circuit 700 differs from the photonic integrated circuit 100 mainly in that it lacks the peripheral isolation walls 113 and in that it includes a peripheral isolation structure 713 having an optically reflective surface 713R surrounding the input surface of the waveguide 111.

[0112] In the example shown, the peripheral insulation structure 713 takes advantage of the phenomenon of total internal reflection (TIR).

[0113] According to one embodiment, the peripheral isolation structure 713 at least partially surrounds a photonic component and extends from the top face of the layer 107 into the active stack comprising the layers 103, 105 and 107. In the illustrated example, the peripheral isolation structure 713 partially surrounds the entrance surface of the waveguide 111. Furthermore, in this example, the peripheral isolation structure 713 extends from the top face of the layer 107 through the layers 107, 105 and 103 and is interrupted in the thickness of the semiconductor substrate 101. This example is not, however, limiting. As an alternative, the peripheral insulation structure 713 can pass through the layer 103 and stop on and in contact with the top face 101T of the semiconductor substrate 101, or penetrate into the thickness of the layer 103 without passing through it.

[0114] In the example shown, the peripheral insulation structure 713 has a height d4 on the order of several hundred micrometers, for example, approximately 100 pm. The peripheral insulation structure 713 also has a width w4 on the order of several tens of micrometers, for example, approximately 20 pm.

[0115] The peripheral insulation structure 713 can, as illustrated in [Fig.7B], have a flared cross-section, the structure 713 being wider in the upper part, i.e. in the vicinity of the upper face of the layer 107, than in the lower part, i.e. in the vicinity of the upper face 101T of the semiconductor substrate 101. In this case, the width w4 of the peripheral insulation structure 713 corresponds for example to the maximum width of the peripheral insulation structure 713.

[0116] In the illustrated example, the peripheral insulation structure 713 has the shape of an air-filled trench. In this example, the optically reflective surface 713R includes a face whose normal is inclined at an angle 0c, called the critical angle, with respect to the direction of radiation propagation inside the waveguide 111 from the inlet surface of the waveguide 111. This ensures that any stray radiation escaping from the waveguide 111 and reaching the optically reflective surface 713R is totally reflected within the portion of the active structure bordered by the peripheral insulation structure 713 and does not propagate outside the peripheral insulation structure 713. In [Fig. 7A], dashed lines symbolize a propagation path 715 of the stray radiation within an area laterally delimited by the optically reflective surface 713R of the peripheral insulation structure 713..

[0117] In the example shown, the reflected stray radiation reaches another face of the optically reflective surface 713R. Analogously to what has been described previously, said face is inclined so that the stray radiation undergoes total reflection and is consequently confined within the peripheral insulation structure 713.

[0118] The critical angle θc for total reflection of stray radiation depends on the refractive index ni of the material of layer 107 and a refractive index n3 of the material inside the peripheral insulation structure 713—in this case, air. More precisely, the critical angle θc is equal to arcsin(n3 / ni). When layer 107 is made of silicon oxide and the peripheral insulation structure 713 is filled with air, the critical angle θc is approximately 43.6°.

[0119] One advantage of the photonic integrated circuit 700 is that it allows the parasitic radiation produced by the waveguide 111 to be confined within the peripheral isolation structure 713. This isolates the waveguide 111 and protects other photonic components of the circuit 700, not detailed in Figures 7A and 7B, from parasitic radiation. This limits or prevents the propagation of parasitic radiation in the photonic integrated circuit 700, particularly compared to a circuit similar to the 700 but lacking the peripheral isolation structure 713, in which parasitic radiation can propagate into layer 103, layer 107, and / or the semiconductor substrate 101 due to the absence of the peripheral isolation structure 713.

[0120] Figure 8 is a schematic, partial top view of a photonic integrated circuit 800 according to one embodiment. The photonic integrated circuit 800 of Figure 8 includes elements common to the photonic integrated circuit 700 of Figures 7A and 7B. These common elements will not be described in detail again below.

[0121] The photonic integrated circuit 800 differs from the photonic integrated circuit 700 mainly in that it includes, instead of the waveguide 111, the waveguide 211. In the example shown, the peripheral isolation structure 713 opens out on the side of a lateral face of the photonic integrated circuit 800 on which the inlet surface of the waveguide 211 is flush.

[0122] The 800 photonic integrated circuit has advantages similar or identical to those of the 700 photonic integrated circuit.

[0123] Figure 9 is a schematic, partial top view of a 900 photonic integrated circuit according to one embodiment. The 900 photonic integrated circuit of Figure 9 includes elements common to the 800 photonic integrated circuit of Figure 8. These common elements will not be described in detail again below.

[0124] The photonic integrated circuit 900 differs from the photonic integrated circuit 800 mainly in that its peripheral insulation structure 713 is at least partially filled with a reflective material 901, causing a reflection of parasitic radiation produced by the waveguide 211 allowing this radiation to be confined inside the peripheral insulation structure 713.

[0125] Figure 10 is a schematic, partial perspective view of a 1000 photonic integrated circuit according to one embodiment. The 1000 photonic integrated circuit of Figure 10 includes elements common to the 700 photonic integrated circuit of Figures 7A and 7B. These common elements will not be detailed again below. For the sake of clarity, layer 107 has not been shown in Figure 10.

[0126] The photonic integrated circuit 1000 differs from the photonic integrated circuit 700 mainly in that the integrated circuit 1000 is devoid of the semiconductor substrate 101 under the peripheral insulation structure 713 and under the input surface of the waveguide 111.

[0127] Compared to the photonic integrated circuit 700, this makes it possible to further limit or prevent the propagation of parasitic radiation. In particular, it makes it possible to limit or prevent the propagation, within the semiconductor substrate 101, of parasitic radiation produced in the vicinity of the input surface of the waveguide 111.

[0128] Figure 11 is a schematic, partial perspective view of a photonic integrated circuit 1100 according to one embodiment. The photonic integrated circuit 1100 of Figure 11 includes elements common to the photonic integrated circuit 800 of Figure 8. These common elements will not be detailed again below. For the sake of readability, layer 107 has not been shown in Figure 11.

[0129] The photonic integrated circuit 1100 differs from the photonic integrated circuit 800 mainly in that the integrated circuit 1100 is devoid of the substrate semiconductor 101 under the peripheral insulation structure 713 and under the waveguide inlet surface 211.

[0130] Compared to the photonic integrated circuit 800, this makes it possible to further limit or prevent the propagation of parasitic radiation. In particular, it makes it possible to limit or prevent the propagation, within the semiconductor substrate 101, of parasitic radiation produced in the vicinity of the entrance surface of the waveguide 211.

[0131] The [Fig.12] is a schematic and partial perspective view of a 1200 photonic integrated circuit according to one embodiment.

[0132] In the illustrated example, the photonic integrated circuit 1200 comprises the waveguide 211, the peripheral insulation structure 713 surrounding the input surface of the waveguide 211, and a resonator 1201. The resonator 1201 is located near a straight portion of the waveguide 211 and, viewed from above, has an annular shape. The resonator 1201 includes, for example, a ring-shaped region formed in layer 105.

[0133] In the example shown, peripheral isolation walls 1203 are arranged on either side of the resonator 1201. In this example, the peripheral isolation walls 1203 each have a straight shape extending laterally along a principal direction substantially orthogonal to the direction of radiation propagation inside the straight part of the waveguide 211. The peripheral isolation walls 1203 each have, for example, a structure analogous to that of the peripheral isolation walls 113 of the photonic integrated circuit 100 of Figures IA and IB.

[0134] In the illustrated example, the photonic integrated circuit 1200 includes a cavity 1205 located in the semiconductor substrate 101, directly above the input surface of the waveguide 211 and the peripheral insulation structure 713. In this example, the cavity 1205 extends vertically through the entire thickness of the semiconductor substrate 101, so that the semiconductor substrate 101 is absent below the input surface of the waveguide 211 and below the peripheral insulation structure 713.

[0135] One advantage of the photonic integrated circuit 1200 is that the absence of the semiconductor substrate 101 under the input surface of the waveguide 211 and under the peripheral isolation structure 713 makes it possible to limit or avoid the propagation, particularly in the semiconductor substrate 101, of parasitic radiation produced in the vicinity of the input surface of the waveguide 211. Furthermore, the presence of the peripheral isolation walls 1203 around the resonator 1201 makes it possible to limit or avoid the propagation, particularly in the layers 103 and 107, of parasitic radiation produced by the resonator 1201.

[0136] Various embodiments and variations have been described. Those skilled in the art will understand that certain features of these various embodiments and variations could be combined, and other variations will become apparent to those skilled in the art. In particular, those skilled in the art are able, from the indications in this description, to foresee a photonic integrated circuit comprising the optically absorbing layer 301, located directly above at least one photonic component and in contact with a face of the layer 103 opposite the layer 105, and at least one peripheral insulating wall 113 or peripheral insulating structure 713 surrounding the component.

[0137] Moreover, what is set forth more particularly in relation to an example of application to quantum photonic integrated circuits applies more generally to any type of photonic integrated circuit.

[0138] Finally, the practical implementation of the described embodiments and variants is within the reach of a person skilled in the art, based on the functional indications given above. In particular, the described embodiments are not limited to the specific examples of materials and dimensions mentioned in this description.

Claims

Demands

1. Photonic integrated circuit (700; 800; 900; 1000; 1100; 1200) comprising: - a semiconductor substrate (101); - an active stack located on the side of a first face (101T) of the semiconductor substrate (101) and comprising: a first layer (103) of a first material having a first refractive index covering the first face (101T) of the semiconductor substrate (101); a second layer (105) of a second material having a second refractive index covering the first layer (103); and a third layer (107) of the first material covering the second layer (105); - at least one photonic component (111; 211; 1201) formed in the active stack; and - at least one peripheral isolation structure (713) comprising an optically reflective surface (713R) surrounding at least partially said at least one photonic component (111; 211;1201) and extending, from a face of the third layer (107) opposite the semiconductor substrate (101), into the active stack.;

2. Circuit (700; 800; 900; 1000; 1100; 1200) according to claim 1, wherein said at least one peripheral insulation structure (713) is filled with air and has, in top view, a flank inclined, with respect to a direction of propagation of radiation in said at least one photonic component (111; 211; 1201), at an angle (0c) permitting total reflection of the radiation.

3. Circuit (700; 800; 900; 1000; 1100; 1200) according to claim 1, wherein said at least one peripheral insulation structure (713) comprises sides coated with a reflective material.

4. Circuit (700; 800; 900; 1000; 1100; 1200) according to claim 1, 2 or 3, wherein the semiconductor substrate (101) is absent under said at least one photonic component (111; 211; 1201).

5. Circuit (700; 800; 900; 1000; 1100; 1200) according to claim 4, wherein the semiconductor substrate (101) is absent under said at least one peripheral insulation structure (713).

6. Circuit (700; 800; 900; 1000; 1100; 1200) according to any one of claims 1 to 5, wherein the second refractive index is strictly greater than the first refractive index.

7. Circuit (700; 800; 900; 1000; 1100; 1200) according to any one of claims 1 to 6, wherein the first material is silicon oxide and the second material is silicon.

8. Circuit (700; 800; 900; 1000; 1100; 1200) according to any one of claims 1 to 7, wherein said at least one photonic component (111; 211; 1201) is selected from: - an input surface or an output surface of a waveguide (111; 211); - a filter; - a resonator (1201); - a demultiplexer; and - a photon detector.

9. Circuit (700; 800; 900; 1000; 1100; 1200) according to any one of claims 1 to 8, further comprising an optically absorbing layer (301) located above said at least one photonic component (111; 211; 1201) and in contact with a face of the first layer (103) opposite the second layer (105).

10. Circuit (700; 800; 900; 1000; 1100; 1200) according to claim 9, wherein the optically absorbing layer (301) is located on and in contact with the first face (101T) of the semiconductor substrate (101).

11. Circuit (700; 800; 900; 1000; 1100; 1200) according to claim 9 or 10, further comprising a cavity (401; 501; 1205) extending from a second face (101B) of the semiconductor substrate (101) opposite the first face (301T) to the first face of the semiconductor substrate and located above said at least one photonic component (111; 211; 1201), the optically absorbing layer covering a bottom of the cavity.

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