Protective switch

Abstract

Overvoltage and overcurrent protection switch. This description relates to an overvoltage and overcurrent protection switch (210) comprising: - a first NMOS transistor (T211) adapted to receive a first voltage across its conduction terminals; - a second NMOS transistor (T212) comprising a source terminal connected to a source terminal of said first transistor (T211), and adapted to receive a second voltage across its conduction terminals that is lower than the first voltage; and - a third NMOS transistor (T213) comprising a source terminal connected to a source terminal of said first transistor (T211), and adapted to receive said second voltage across its conduction terminals. Figure for the abbreviation: Fig. 2

Description

Title of the invention: Protective switch technical field

[0001] This description relates generally to electronic systems and devices, and to the protection of electronic systems and devices against parasitic phenomena such as the occurrence of overvoltages or overcurrents. Previous technique

[0002] The occurrence of an overvoltage or overcurrent within an electronic system or device can prevent its proper functioning and may even damage it.

[0003] It would be desirable to be able to improve, at least in part, certain aspects of known overvoltage and overcurrent protection devices. Summary of the invention

[0004] There is a need for more efficient overvoltage and overcurrent protection devices.

[0005] There is a need for more efficient overvoltage and overcurrent protection switches.

[0006] There is a need for overvoltage and overcurrent protection switches that have better compatibility with the device to be protected.

[0007] There is a need for overvoltage and overcurrent protection switches capable of detecting overcurrents more accurately.

[0008] There is a need for overvoltage and overcurrent protection switches of smaller dimensions.

[0009] One embodiment overcomes all or part of the drawbacks of known overvoltage and overcurrent protection switches.

[0010] An embodiment overcomes all or part of the drawbacks of known overvoltage and overcurrent protection devices.

[0011] One embodiment provides a surge and overcurrent protection switch comprising: - a first NMOS type transistor adapted to receive a first voltage between its conduction terminals; - a second NMOS transistor comprising a source terminal connected to a source terminal of said first transistor, and adapted to receive between its conduction terminals a second voltage lower than the first voltage; and - a third NMOS type transistor comprising a source terminal connected to a source terminal of said first transistor, and being adapted to receive said second voltage between its conduction terminals.

[0012] According to one embodiment, said second and third transistors operate in reverse ohmic mode.

[0013] According to one embodiment, the first voltage is between 5 and 65 V.

[0014] According to one embodiment, the second voltage is between 5 and 8 V.

[0015] According to one embodiment, the switch further comprises: - a fourth NMOS-type transistor adapted to receive between its terminals conduction of the said first voltage; - a fifth NMOS-type transistor comprising a source terminal connected to a source terminal of said fourth transistor, and adapted to receive said second voltage between its conduction terminals; and - a sixth NMOS type transistor comprising a source terminal connected to a source terminal of said fourth transistor, and being adapted to receive said second voltage between its conduction terminals.

[0016] According to one embodiment, the switch further comprises a controllable voltage source and a controllable voltage source management circuit, said controllable voltage source being adapted to provide a voltage between said source terminal of said second transistor and said gate terminal of said second transistor, and between said source terminal of said third transistor and said gate terminal of said third transistor.

[0017] Another embodiment provides for a protection device against overvoltages and overcurrents comprising a switch described above.

[0018] According to one embodiment, the device further comprises a control circuit for said switch.

[0019] According to one embodiment, the device further comprises an overcurrent detection circuit connected to a drain terminal of said third transistor.

[0020] According to one embodiment, said overcurrent detection circuit includes an internal voltage compensation circuit.

[0021] According to one embodiment, the device further comprises an overvoltage detection circuit connected to a drain terminal of said first transistor.

[0022] Another embodiment provides for an electronic device comprising a device for protection against overvoltages and overcurrents as described above.

[0023] Another embodiment provides for an energy recharging device comprising a protection device against overvoltages and overcurrents described above.

[0024] Another embodiment provides for an electronic system comprising an electronic device, an energy recharging device, and a device for protection against overvoltages and overcurrents described above.

[0025] Another embodiment provides a method for protection against overvoltages and overcurrents using a switch described above. Brief description of the drawings

[0026] These features and advantages, as well as others, will be described in detail in the following description of particular embodiments, given by way of non-limiting example, in relation to the accompanying figures, among which:

[0027] [Fig.1] represents an embodiment of an electronic system;

[0028] Figure 2 represents an embodiment of a device for protection against overvoltages and overcurrents;

[0029] [Fig.3] represents a curve illustrating the operation of a MOS transistor;

[0030] Figure 4 represents another embodiment of a protection device against overvoltages and overcurrents; and

[0031] Figure 5 represents another embodiment of a protection device against overcurrents. Description of the implementation methods

[0032] The same elements have been designated by the same reference numerals in the different figures. In particular, the structural and / or functional elements common to the different embodiments may have the same reference numerals and may have identical structural, dimensional and material properties.

[0033] For the sake of clarity, only the steps and elements useful for understanding the described embodiments have been represented and are detailed.

[0034] Unless otherwise specified, when referring to two elements connected together, this means directly connected without intermediate elements other than conductors, and when referring to two elements connected (in English "coupled") together, this means that these two elements can be connected or linked through one or more other elements.

[0035] In the following description, when reference is made to absolute position qualifiers, such as the terms "front", "back", "top", "bottom", "left", "right", etc., or relative position qualifiers, such as the terms "above", "below", "superior", "inferior", etc., or to orientation qualifiers, such as the terms "horizontal", "vertical", etc., reference is made, unless otherwise specified, to the orientation of the figures.

[0036] Unless otherwise specified, the expressions "approximately", "roughly", and "in the order of" mean within 10%, preferably within 5%.

[0037] The embodiments described below relate to the protection of electronic devices against overvoltages and overcurrents, and more particularly to a protective switch against such phenomena. This switch comprises a first high-voltage transistor adapted to receive overvoltages, and second low-voltage transistors adapted to detect overcurrents. The structure of this switch is described in detail with reference to Figures 2 and 3 and eliminates the need for a high-voltage transistor adapted to detect overcurrents. Variations of this structure are described with reference to Figures 4 and 5.

[0038] Furthermore, the embodiments described below are particularly suitable for use in all types of industrial markets where overvoltage and overcurrent protection is required. More specifically, such a protective switch may be intended for: - the automotive industry, for example in the field of automotive electrification or in the field of advanced driver assistance systems (ADAS); - the industrial industry, for example in the field of green energy, in the field of infrastructure electrification, the Internet of Things (IoT) and Smart Homes, where electricity and energy consumption and data exchange are key elements; - the personal electronics industry, for example in the field of mobile telephony and the Internet of Things (IoT), as well as in the field of broadband interfaces; and - the communications equipment, computer and peripherals industry, for example in the field of infrastructure and data centers, and in the field of low Earth Orbit (LEO) satellites.

[0039] Fig. 1 represents, very schematically and in block form, an embodiment of an electronic system 100.

[0040] The electronic system 100 includes an electronic device 110 (LOAD) comprising a power distribution means, such as a battery, which may need to be recharged. For this purpose, the system 100 further includes a power recharging device 120 (CHARGER) adapted to recharge the power distribution means of the electronic device 110. The device 110 may also be referred to as the device to be protected.

[0041] The system 100 further includes an electrical connection means 130 for the devices 110 and 120. In one embodiment, the means 130 is adapted to transmit power, and, where applicable, data, from the device 120 to the device 110. In one example, the means 130 is a cable. The means 130 can support any type of power transmission protocol and, where applicable, data transmission protocol. In one example, the means 130 can also be used as a means of transmitting energy, and, where applicable, data, from device 110 to device 120.

[0042] According to one embodiment, the system 100 further comprises an overvoltage and overcurrent protection device 140 for protecting the device 110 against overvoltages and overcurrents. Several embodiments of overvoltage protection devices are described with reference to Figures 2 to 5.

[0043] In [Fig. 1], the protection device 140 is shown as being disposed between the means 130 and the device 110, but alternatively, the device 140 can be part of, i.e. be integrated into, the device 110, the charging device 120 or the means 130.

[0044] According to one embodiment, the protection device 140 comprises: - a protective switch 141; - a control circuit 142 (CMD) for switch 141; - an overcurrent detection circuit 143 (OCP); and - an overvoltage detection circuit 144 (OVP).

[0045] In one embodiment, the switch 141 is arranged to cut off the power supply to device 110 from device 120 in the event of an overvoltage and / or overcurrent detection. In other words, the switch 141 is arranged to disconnect device 110 from device 120 in the event of an overvoltage and / or overcurrent detection. The input of switch 141 is referred to as the terminal of switch 141 connected to device 120, and the output of switch 141 is referred to as the terminal of switch 141 connected to device 110. Detailed examples of switch 141 are described with reference to Figures 2, 4, and 5.

[0046] According to one embodiment, the control circuit 142 is adapted to receive information from the detection circuits 143 and 144 and to apply a command to the switch 141 based on this information. More specifically, if the control circuit receives information from the detection circuits 143 and 144 indicating that an overvoltage or overcurrent has been detected, then the control circuit 142 sends an opening command to the switch 141, which then becomes non-conductive.

[0047] According to one embodiment, the overcurrent detection circuit 143 is connected, preferably connected, to the output of the switch 141, i.e. between the switch 141 and the device 110. A detailed example of the circuit 143 is described in relation to [Fig.5].

[0048] According to one embodiment, the overvoltage detection circuit 144 is connected, preferably connected, to the input of the switch 141, i.e. between the switch 141 and the device 120.

[0049] One implementation of a method for protection against overvoltages and overcurrents is as follows. When an overcurrent is detected by the detection device 143, information is sent to the control circuit 142, which then transmits a command to open the switch 141, thereby disconnecting the device 110 from the device 120. When an overvoltage is detected by the detection device 144, information is sent to the control circuit 142, which then transmits a command to open the switch 141, thereby disconnecting the device 110 from the device 120. When no overcurrent or overvoltage is detected, the switch 141 is closed.

[0050] Fig. 2 represents schematically and partially in block form, an embodiment of a device for protection against overvoltages and overcurrents 200.

[0051] The protective device 200 is similar to the protective device 140 described in relation to [Fig. 1]. The features common to devices 140 and 200 are not described again in detail. Only the differences between devices 140 and 200 are highlighted.

[0052] Thus, like device 140, device 200 comprises: - a protective switch 210 of the type of protective switch 141; - a control circuit 220 (CMD) of the switch 210 of the type of the control circuit 142; - an overcurrent detection circuit 230 (OCP) of the type of overcurrent detection circuit 143; and - a 240 overvoltage detection circuit (OVP) of the type of the 144 overvoltage detection circuit.

[0053] According to one example, the device 200 includes an input terminal IN200 adapted to be connected to a device of the type of device 120 described in relation to [Fig. 1]. According to another example, the device 200 further includes an output terminal OUT200 adapted to be connected to a device of the type of device 110 described in relation to [Fig. 1].

[0054] In one embodiment, the switch 210 comprises a first transistor T211. For example, transistor T211 is a metal-oxide-semiconductor field-effect transistor (MOSFET). Furthermore, transistor T211 is an N-channel MOS transistor. Moreover, transistor T211 is adapted to withstand high voltages across its conduction terminals, i.e., its source and drain terminals. More specifically, transistor T211 is adapted to withstand, across its conduction terminals, a maximum voltage between 5 and 65 V, for example, greater than 10 or 12 V, for example, on the order of 18 V.

[0055] In one embodiment, the switch 210 further comprises two transistors T212 and T213. In one example, transistors T211 and T212 are NMOS transistors. Moreover, transistors T212 and T213 are adapted to receive low voltages across their conduction terminals. In other words, transistors T212 and T213 are adapted to receive, across their conduction terminals, a maximum voltage lower than the maximum voltage that transistor T211 is capable of withstanding. More specifically, transistors T212 and T213 are adapted to receive, across their conduction terminals, a voltage between 5 and 8 V, for example, on the order of 5 V.

[0056] In one embodiment, a drain terminal of transistor T211 is connected, preferably connected, to the input terminal IN200 of device 200, and a source terminal of transistor T211 is connected, preferably connected, to the source terminals of transistors T212 and T213. In one embodiment, a drain terminal of transistor T212 is connected, preferably connected, to the output terminal OUT200 of device 200. In one embodiment, a drain terminal of transistor T213 is connected, preferably connected, to an input of the overcurrent detection circuit 230. In one embodiment, the gate terminals of transistors T211, T212, and T213 are all connected, preferably connected, to an output of the control circuit 220.

[0057] Transistor T211 is used as a power switch to disconnect the device to be protected from the charging device upon detection of an overvoltage or overcurrent. Transistor T212 is used as a conduction transistor to conduct energy to the device to be protected. Transistor T213 is used as a current-sensing transistor, as it transmits a fraction of the current received by the device to be protected to the overcurrent detection circuit 230. In one embodiment, for proper operation of the switch 210, transistors T212 and T213 operate in reverse ohmic mode. This mode is described in detail with reference to [Fig. 3]. The control circuit 200 is therefore adapted to provide transistors T212 and T213 with a control signal enabling them to operate in reverse ohmic mode.

[0058] One advantage of switch 210 is its smaller size compared to existing protective switches. Indeed, it is common to use two high-voltage transistors to form a single overvoltage and overcurrent protection transistor. High-voltage transistors generally have a large surface area compared to low-power transistors. Using a single high-voltage transistor and two low-power transistors reduces the size of switch 210.

[0059] Figure 3 represents a curve 300 illustrating an operating characteristic of an NMOS transistor. More specifically, curve 300 illustrates the evolution of the output current lout supplied at the source terminal of an NMOS transistor as a function of the evolution of the voltage VDS between its conduction terminals.

[0060] When the voltage VDS is positive, and more precisely between a zero voltage V300 and a saturation voltage V301, the transistor operates in an ohmic regime. In other words, in this case, the transistor can be considered as a resistor with positive resistivity.

[0061] When the voltage VDS exceeds the saturation voltage 1301, the transistor operates in a saturation regime. In other words, its output current lout increases less and less rapidly until it reaches a plateau.

[0062] When the voltage VDS is negative, and more precisely between the zero voltage V300 and a reverse saturation voltage V302, the transistor operates in a reverse ohmic regime. In other words, in this case, the transistor can always be considered as a resistor up to the reverse saturation voltage V302.

[0063] When the voltage VDS exceeds the reverse saturation voltage V302, the transistor operates in reverse saturation mode. In other words, the transistor operates like a diode.

[0064] Fig. 4 represents schematically and partially in block form another embodiment of a device for protection against overvoltages and overcurrents 400.

[0065] The protective device 400 is similar to the protective device 140 described in relation to [Fig. 1] and to the device 200 described in relation to [Fig. 2]. The features common to devices 140, 200, and 400 are not described again in detail. Only the differences between devices 140, 200, and 400 are highlighted.

[0066] Thus, like device 200, device 400 comprises: - a protective switch 410 of the type of protective switch 210; - a control circuit 420 (CMD) of the switch 410 of the type of the control circuit 220; - an overcurrent detection circuit 430 (OCP) of the type of overcurrent detection circuit 230; and - a 440 overvoltage detection circuit (OVP) of the type of the 240 overvoltage detection circuit.

[0067] Device 400 differs from device 200 in that it includes two input terminals IN401 and IN402, and therefore includes a double protective switch 410. Device 400 includes a single output terminal OUT400.

[0068] According to one embodiment, the protection switch 410 comprises two NMOS transistors T411 and T412 adapted to receive high voltages, i.e., of the type of transistor T211. A source terminal of transistor T411 is connected, preferably connected, to a source terminal of transistor T412 and to a node receiving a reference potential, for example, ground. A drain terminal of transistor T411 is connected, preferably connected, to the input terminal IN401 and to an input of the surge detection circuit 440. A drain terminal of transistor T412 is connected, preferably connected, to the input terminal IN402 and to another input of the surge detection circuit 440. The gate terminals of transistors T411 and T412 are connected, preferably connected, to outputs (not shown in [Fig. 4]) of the control circuit 420.

[0069] According to one embodiment, the protective switch 410 further comprises three NMOS transistors T413, T414, and T415 forming a structure of the type of the structure of the switch 210 described in relation to [Fig. 2]. More specifically, transistor T413 is adapted to receive high voltages, i.e., is of the type of transistor T211, and transistors T414 and T415 are adapted to receive low voltages, i.e., are of the type of transistors T212 and T213.

[0070] In one embodiment, a drain terminal of transistor T413 is connected, preferably connected, to the input terminal IN401 of device 400, and a source terminal of transistor T413 is connected, preferably connected, to the source terminals of transistors T414 and T415. In one embodiment, a drain terminal of transistor T414 is connected, preferably connected, to the output terminal OUT400 of device 400. In one embodiment, a drain terminal of transistor T415 is connected, preferably connected, to an input of the overcurrent detection circuit 430. In one embodiment, the gate terminals of transistors T413, T414, and T415 are all connected, preferably connected, to an output of the control circuit 420.

[0071] According to one embodiment, the protection switch 410 further comprises three other NMOS transistors T416, T417 and T418 forming a structure of the type of the structure of the switch 210 described in relation to [Fig. 2]. More particularly, transistor T416 is adapted to receive high voltages, i.e. is of the type of transistor T211, and transistors T417 and T418 are adapted to receive low voltages, i.e. are of the type of transistors T212 and T213.

[0072] In one embodiment, a drain terminal of transistor T416 is connected, preferably connected, to the input terminal IN402 of device 400, and a source terminal of transistor T416 is connected, preferably connected, to the source terminals of transistors T417 and T418. In another embodiment, a drain terminal of transistor T417 is connected, preferably connected, to the output terminal OUT400 of the device 400. According to one embodiment, a drain terminal of transistor T418 is connected, preferably connected, to an input of the overcurrent detection circuit 430. According to one embodiment, the gate terminals of transistors T416, T417 and T418 are all connected, preferably connected, to an output of the control circuit 420.

[0073] As described in relation to Figures 2 and 3, transistors T414, T415, T417 and T418 are all controlled to operate in reverse ohmic mode.

[0074] One advantage of this device is that it allows the detection of overvoltages and overcurrents on two input terminals.

[0075] Furthermore, it is within the reach of a person skilled in the art to generalize the embodiment described in relation to [Fig.4] to a device for protection against overvoltages and overcurrents comprising more than two inputs.

[0076] Fig. 5 represents schematically and partially in block form another embodiment of a device for protection against overvoltages and overcurrents 500.

[0077] The protective device 500 is similar to the protective device 140 described in relation to [Fig. 1] and to the device 200 described in relation to [Fig. 2]. The features common to devices 140, 200, and 500 are not described again in detail. Only the differences between devices 140, 200, and 500 are highlighted.

[0078] Thus, like device 200, device 500 comprises: - a protective switch 510 of the type of protective switch 210; - a control circuit 520 (CMD) of the switch 510 of the type of the control circuit 220; - an overcurrent detection circuit 530 (OCP) of the type of overcurrent detection circuit 230; and - according to an example, an overvoltage detection circuit of the type of the 240 overvoltage detection circuit (not shown in [Fig.5]).

[0079] Device 500 differs from device 200 in that switch 510 is adapted to filter overcurrents occurring at the input terminals.

[0080] According to one embodiment, the protective switch 510 further comprises three NMOS transistors T511, T512, and T513 forming a structure of the type of the structure of the switch 210 described in relation to [Fig. 2]. More specifically, transistor T511 is adapted to receive high voltages, i.e., is of the type of transistor T211, and transistors T512 and T513 are adapted to receive low voltages, i.e., are of the type of transistors T212 and T213.

[0081] According to one embodiment, a drain terminal of transistor T511 is connected, preferably connected, to an input terminal IN501 of device 500, and a terminal of The source of transistor T511 is connected, preferably connected, to the source terminals of transistors T512 and T513. In one embodiment, a drain terminal of transistor T512 is connected, preferably connected, to an output terminal OUT500 of device 500. In one embodiment, a drain terminal of transistor T513 is connected, preferably connected, to an input of the overcurrent detection circuit 530. In one embodiment, the gate terminal of transistor T511 is connected, preferably connected, to an output of the control circuit 520.

[0082] According to one embodiment, the switch 510 further comprises a controllable voltage source VS510 and a controllable voltage source VS510 management circuit 511 (Current Level Setting). The voltage source is adapted to provide a control potential to transistors T512 and T513 and to adapt this control potential according to the value of the current transmitted between terminals IN500 and OUT500.

[0083] Furthermore, according to one example, the overcurrent detection circuit may include: - an NMOS T531 transistor; - two comparators Comp531 and Comp532; - a resistor R531; and - a compensation circuit for an internal voltage (VS530) of the comparator.

[0084] According to one example, a drain terminal of transistor T531 is connected, preferably connected, to the drain terminal of transistor T513, and a source terminal of transistor T531 is connected, preferably connected, to a node N531. A gate terminal of transistor T531 is connected, preferably connected, to an output of comparator Comp531. One terminal of resistor R531 is connected, preferably connected, to node N531, and a second terminal of resistor R531 is connected, preferably connected, to a node providing a reference potential, for example, ground. A non-inverting (+) terminal of the comparator is connected, preferably connected, to node N531, and an inverting (-) terminal is connected to the output terminal OUT500 of device 500 via circuit VS530. As an example, the VS530 circuit is a voltage source providing a Voffset230 voltage compensating for an internal offset voltage of the comparator Comp530.The comparator Comp531 and the transistor form a stage for converting the current supplied by the transistor T513 into a voltage.

[0085] According to one example, comparator Comp532 is used to compare the voltage supplied by the conversion stage with a reference voltage Vref500. This is an overcurrent detection stage. For this purpose, a non-inverting terminal (+) of comparator Comp532 is connected, preferably connected, to the source terminal of transistor T531. An inverting terminal (-) of comparator Comp532 is adapted to receive the reference voltage Vref500. An output of comparator Comp532 is connected, preferably connected, to the control circuit 520.

[0086] One implementation of a method for protection against overvoltages and overcurrents is as follows. When an overcurrent is detected by the detection device 530, information is sent to the circuit 511, which then transmits a command to open switches T512 and T513, thereby disconnecting the device to be protected from the charging device. When an overvoltage is detected by the overvoltage detection device (not shown in [Fig. 5]), information is sent to the control circuit 520, which then transmits a command to open switch T511, thereby disconnecting the device to be protected from the charging device.

[0087] One advantage of this embodiment is that it compensates for the offset voltage Voffset530 of the comparator Comp531. Indeed, this voltage Voffset is constant, but the current it provides depends on the on-state resistance of transistor T513. The smaller this resistance, the smaller the current resulting from the voltage Voffset; therefore, simply varying the resistance of transistor T513 is sufficient to vary the error of the overcurrent detection circuit.

[0088] Various embodiments and variations have been described. Those skilled in the art will understand that certain features of these various embodiments and variations could be combined, and other variations will be apparent to those skilled in the art. In particular, the embodiments described in relation to Figures 4 and 5 can be combined without significant inventive effort.

[0089] Finally, the practical implementation of the embodiments and variants described is within the reach of a person skilled in the art, based on the functional indications given above.

Claims

Demands

1. Overvoltage and overcurrent protection switch (141; 210; 410; 510) comprising: - a first NMOS transistor (T211; T413, T416; T511) adapted to receive a first voltage between its conduction terminals; - a second NMOS transistor (T212; T414, T417; T512) comprising a source terminal connected to a source terminal of said first transistor (T211; T413, T416; T511), and being adapted to receive a second voltage between its conduction terminals lower than the first voltage; and - a third NMOS type transistor (T213; T415, T418; T513) comprising a source terminal connected to a source terminal of said first transistor (T211; T413, T416; T511), and being adapted to receive said second voltage between its conduction terminals.

2. Switch according to claim 1, wherein said second and third transistors (T212, T213; T414, T415, T417, T418; T512, T513) operate in reverse ohmic mode.

3. Switch according to claim 1 or 2, wherein the first voltage is between 5 and 65 V.

4. Switch according to any one of claims 1 to 3, wherein the second voltage is between 5 and 8 V.

5. A switch according to any one of claims 1 to 4, further comprising: - a fourth NMOS transistor (T416, T413) adapted to receive said first voltage between its conduction terminals; - a fifth NMOS transistor (T417, T414) comprising a source terminal connected to a source terminal of said fourth transistor (T416, T413), and being adapted to receive said second voltage between its conduction terminals; and - a sixth NMOS transistor (T418, T415) comprising a source terminal connected to a source terminal of said fourth transistor (T416, T413), and being adapted to receive said second voltage between its conduction terminals.

6. A switch according to any one of claims 1 to 5, further comprising a controllable voltage source (VS510) and a controllable voltage source management circuit (511) (VS510), said controllable voltage source (VS510) being adapted to provide a voltage between said source terminal of said second transistor (T512) and said gate terminal of said second transistor (T512), and between said source terminal of said third transistor (T513) and said gate terminal of said third transistor (T513).

7. Overvoltage and overcurrent protection device (140; 200; 400; 500) comprising a switch (141; 210; 410; 510) according to any one of claims 1 to 6.

8. Device according to claim 7, further comprising a control circuit (142; 220; 420; 520) of said switch (141; 210; 410; 510).

9. Device according to claim 7 or 8, further comprising an overcurrent detection circuit (143; 230; 430; 530) connected to a drain terminal of said third transistor (T213; T415, T418; T513).

10. Device according to claim 9, wherein said overcurrent detection circuit (530) includes an internal voltage compensation circuit (VS530).

11. Device according to any one of claims 7 to 10, further comprising an overvoltage detection circuit (144; 240; 440) connected to a drain terminal of said first transistor (T211; T413, T416; T511).

12. Electronic device (110) comprising a device for protection against overvoltages and overcurrents (140; 200; 400; 500) according to any one of claims 7 to 11.

13. Energy recharging device (120) comprising an overvoltage and overcurrent protection device (140; 200; 400; 500) according to any one of claims 7 to 11.

14. Electronic system (100) comprising an electronic device (110), an energy recharging device (120), and an overvoltage and overcurrent protection device (140; 200; 400; 500) according to any one of claims 7 to 11.

15. A method of protection against overvoltages and overcurrents using a switch (141; 210; 410; 510) according to any one of claims 1 to 6.

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