ELECTRONIC DEVICE

Abstract

The present invention relates to the electronics industry, and more specifically to an electronic device comprising at least two embedded electrodes. The present invention relates to an electronic device comprising an S / EE / CA stack, said stack being composed of at least two embedded electrodes (EE) in a polymer and / or composite support (S), coated with an active layer (CA), as well as to its manufacturing process and to an apparatus comprising such a device. The present invention is useful, for example, for improving current injection into an active layer within an electronic device. Figures

Claims

adhesive (CAD) thus forming an ST / EE / CAD / S stack, comprising at least two electrodes embedded (EE) in the support; e) Decoupling and transfer of the temporary substrate from the ST / EE / S or ST / EE / CAD / S stack and obtaining a support comprising at least two embedded electrodes, each having a non-embedded surface; f) Deposition of an active layer (CA) on the non-embedded surface of each of the at least two electrodes so as to form a connection and obtaining an electronic device comprising an S / EE / CA stack, optionally comprising an adhesive layer (CAD) thus forming an S / CAD / EE / CA stack.

10. A method for manufacturing an electronic device according to the preceding claim, further comprising an intermediate step a'), subsequent to step a), for optimizing the roughness, topography and / or surface adhesion of the temporary substrate.

11. A method for manufacturing an electronic device according to any one of claims 9 to 10, wherein step c) further comprises a deposition of adhesive layer (CAD) on the surface of the temporary substrate (ST) on which the electrodes (E) have been deposited, and wherein the surface of the temporary substrate covered with adhesive layer has a surface energy of less than 600 dyne / cm².

12. A method for manufacturing an electronic device according to any one of claims 9 to 10, wherein the decoupling step is carried out by a chemical etching step, mechanical etching, mechanical removal, heat treatment, UV treatment or any mixture thereof.

13. A method for manufacturing an electronic device according to any one of claims 9 to 10, wherein the temporary substrate (ST) has a roughness of less than 1 nm.

14. Temporary device comprising an S / EE / ST or S / CAD / EE / ST stack, wherein (S), (CAD), (EE) and (ST) are as defined in claim 9. [Fig. 1] [Fig. 2] [Fig. 2] ^40T,,E $.................................... J r 20 ivMÿ < U.._— 500 1000 1500 Length (pm) 2b [Fig. 3] 3a [Fig. 3] Length (pm) 3b

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