A depth image sensor with a loaded architecture

The depth pixel design with controllable storage areas and charge flow paths addresses the challenge of compactness and noise reduction in depth image sensors, ensuring high sensitivity and resolution.

FR3170197A1Pending Publication Date: 2026-06-19COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Patent Information

Authority / Receiving Office
FR · FR
Patent Type
Applications
Current Assignee / Owner
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Filing Date
2024-12-13
Publication Date
2026-06-19

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Abstract

The invention relates to an image sensor comprising at least one pixel depth and having two controllable storage areas. Each area includes a memory region separated from a photosensitive region by an electrical potential barrier; a transfer gate extending opposite the barrier; and a reverse transfer gate extending opposite the barrier and an upper portion of the photosensitive region. A charge flow path extending between the transfer gates, directly above the photosensitive region, includes a collection area separated from the photosensitive region by a channel. A circuit is configured to: sample a signal into each memory; and for each storage area, flush the memory by activating the transfer gates and the reverse transfer gate of the storage area between an initialization and a read operation of a read node. (See Figure 2A for the abstract.)
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