Method for manufacturing connection structure, and method for transferring divided adhesive film

Abstract

To provide a method for manufacturing a connection structure capable of improving productivity even if there exists unevenness on a substrate, and a method for transferring a divided adhesive film.SOLUTION: A method for manufacturing a connection structure includes an arrangement step of arranging pieces of an adhesive film on a base material through an elastic resin layer, a transfer step of pushing the base material to a substrate, and transferring the pieces of the adhesive film arranged on the elastic resin layer onto the substrate, and a mounting step of mounting an electronic component on the pieces of the adhesive film transferred onto the substrate, wherein a size of the piece is 200 μm or less, and peeling force of the adhesive film to the elastic resin layer is smaller than peeling force of the adhesive film to the substrate. Thereby, good transferability of the pieces of the adhesive film even on a base material such as wiring, and an insulation film on the surface of the wiring where unevenness exists including a step can be obtained, and productivity can be improved.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] This technology relates to a method for manufacturing a connecting structure using individual pieces of adhesive film, and a method for transferring individual pieces of adhesive film. [Background technology]

[0002] In recent years, the development of micro-LEDs has been active as the next-generation display technology following LCDs (Liquid Crystal Displays) and OLEDs (Organic Light Emitting Diodes). A challenge for micro-LEDs is the need for a technology called mass transfer, which involves mounting micro-sized LEDs onto a panel substrate, and this technology is being researched in various places.

[0003] Currently, the main mass transfer method is the laser lift-off (LLO) method, which uses a LIFT (Laser Induced Forward Transfer) device to transfer LED chips onto a substrate. By pre-attaching adhesive films, conductive films, or anisotropic conductive films (ACF) to the electrode surfaces of the LED chips and then transferring the LED chips to the substrate using the LLO method, productivity can be improved.

[0004] However, if there are irregularities on the substrate, including steps such as wiring and insulating films on the wiring surface, the LED chip transfer rate may decrease with the LLO method, potentially leading to reduced productivity. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2020-145243 [Overview of the project] [Problems that the invention aims to solve]

[0006] This technology was proposed in light of the conventional situation described above, and provides a method for manufacturing a connecting structure and a method for transferring individual adhesive films that can improve productivity even when irregularities exist on the substrate. [Means for solving the problem]

[0007] The manufacturing method for a connecting structure according to this technology comprises an arrangement step of arranging individual pieces of adhesive film on a substrate via an elastic resin layer, a transfer step of pressing the substrate onto a substrate and transferring the individual pieces of adhesive film arranged on the elastic resin layer to the substrate, and a mounting step of mounting electronic components on the individual pieces of adhesive film transferred to the substrate, wherein the size of the individual pieces is 200 μm or less, and the peeling force of the adhesive film from the elastic resin layer is smaller than the peeling force of the adhesive film from the substrate.

[0008] The method for transferring individual adhesive films according to this technology comprises an arrangement step of arranging individual pieces of adhesive film on a substrate via an elastic resin layer, and a transfer step of pressing the substrate onto a substrate and transferring the individual pieces of adhesive film arranged on the elastic resin layer to the substrate, wherein the size of the individual pieces is 200 μm or less, and the peeling force of the adhesive film from the elastic resin layer is smaller than the peeling force of the adhesive film from the substrate. [Effects of the Invention]

[0009] This technology allows for good transfer of individual adhesive film pieces even to substrates with uneven surfaces, including steps such as wiring and insulating films on the wiring surface, thereby improving productivity. [Brief explanation of the drawing]

[0010] [Figure 1] Figure 1 shows the process of forming individual pieces of adhesive film by laser ablation. [Figure 2] Figure 2 shows the process of arranging individual pieces of adhesive film in an elastic resin layer. [Figure 3]FIG. 3 is a diagram for explaining the transfer process according to the first embodiment. [Figure 4] FIG. 4 is a diagram showing the arrangement process according to the second embodiment. [Figure 5] FIG. 5 is a diagram for explaining the transfer process according to the second embodiment. [Figure 6] FIG. 6 is a diagram showing the arrangement of individual pieces of the particle alignment film on the adherend B.

Embodiments for Carrying Out the Invention

[0011] Hereinafter, embodiments of the present invention will be described in detail in the following order with reference to the drawings. 1. Manufacturing method of connection structure 2. Individualized adhesive film 3. Examples

[0012] <1. Manufacturing method of connection structure> The manufacturing method of the connection structure according to the present embodiment includes an arrangement process of arranging individual pieces of an adhesive film on a base material through an elastic resin layer, a transfer process of pressing the base material against a substrate and transferring the individual pieces of the adhesive film arranged on the elastic resin layer to the substrate, and a mounting process of mounting electronic components on the individual pieces of the adhesive film transferred to the substrate. The size of the individual pieces is 200 μm or less, and the peeling force of the adhesive film with respect to the elastic resin layer is smaller than the peeling force of the adhesive film with respect to the substrate. Thereby, good transferability of the individual pieces of the adhesive film can be obtained even for a substrate having irregularities including steps such as wiring and an insulating film on the wiring surface, and productivity can be improved.

[0013] <First Embodiment> Hereinafter, with reference to FIGS. 1 to 3, the arrangement process (A1), the transfer process (B1), and the mounting process (C1) in the manufacturing method of the connection structure according to the first embodiment will be described.

[0014] [Arrangement process (A1)] Figures 1 and 2 are diagrams illustrating the arrangement process according to the first embodiment. Figure 1 shows the process of forming individual pieces of adhesive film by laser ablation, and Figure 2 shows the process of arranging the individual pieces of adhesive film on an elastic resin layer. As shown in Figures 1 and 2, in the arrangement process (A1), individual pieces 12A of adhesive film 12 are arranged on the substrate 21 via the elastic resin layer 22.

[0015] [Laser ablation removal] First, as shown in Figure 1, a portion of the adhesive film 12 formed on a translucent substrate 11 that is transparent to laser light is removed by laser ablation, and individual pieces 12A of the adhesive film 12 are arranged on the translucent substrate 11.

[0016] The upper limit of the size of individual pieces 12A may be 200 μm or less, preferably 150 μm or less, more preferably 50 μm or less, and even more preferably 20 μm or less. The lower limit of the size of individual pieces 12A is preferably 50 μm or more, preferably 30 μm or more, and even more preferably 5 μm or more. Here, the size of individual pieces 12A is, for example, the larger of the length or width in the case of a roughly rectangular shape. The shape of individual pieces 12A may be at least one selected from a polygon with obtuse angles, a polygon with rounded corners, an ellipse, an oblong, and a circle. The transferability of individual pieces can be improved by having fewer acute angles in the shape of individual pieces 12A.

[0017] The arrangement of individual pieces 12A is not particularly limited, but for example, when light-emitting elements are arranged in subpixel units, possible arrangements of subpixels include, for example, stripe arrangement, mosaic arrangement, and delta arrangement in the case of RGB. A stripe arrangement arranges RGB in vertical stripes, which can achieve high resolution. A mosaic arrangement arranges the same RGB colors diagonally, which can produce a more natural image than a stripe arrangement. A delta arrangement arranges RGB in a triangle, with each dot shifted by half a pitch from field to field, which can produce a natural image display.

[0018] Furthermore, the lower limit of the distance between individual pieces 12A is preferably 3 μm or more, more preferably 5 μm or more, and even more preferably 10 μm or more. The upper limit of the distance between individual pieces 12A is not particularly limited, but is preferably 3000 μm or less, more preferably 1000 μm or less, and even more preferably 500 μm or less. If the distance between individual pieces 12A is too small, it is preferable to attach the adhesive film 12 to the entire surface of the substrate 31. If the distance between individual pieces 12A is too large, it is preferable to attach the individual pieces 12A to predetermined positions on the substrate 31 using the conventional method.

[0019] The translucent substrate 11 can be any material that is transparent to laser light, and is preferably quartz glass having high light transmittance across all wavelengths. Furthermore, the translucent substrate 11 can preferably be one in which at least the side facing the adhesive film has been peeled off with, for example, a silicone resin.

[0020] The adhesive film 12 is a resin layer formed on the translucent substrate 11 by known methods such as mixing, coating, and drying. The adhesive film 12 is not particularly limited and can be a conductive film, an anisotropic conductive film (ACF), or an adhesive film (NCF).

[0021] Furthermore, a release material may be provided between the translucent substrate 11 and the adhesive film 12. The release material only needs to have absorption properties with respect to the wavelength of laser light, and generates a shock wave when irradiated with laser light, which ejects the removal portion 12B of the adhesive film 12. Examples of release materials include polyimide. The thickness of the release material is, for example, 1 μm or more.

[0022] As shown in Figure 1, laser light is irradiated from the translucent substrate 11 side to remove the removal portion 12B and form individual pieces 12A. For example, a lift (LIFT: Laser Induced Forward Transfer) device can be used to remove the removal portion 12B.

[0023] The lifting device includes, for example, a telescope that converts pulsed laser light emitted from a laser device into parallel light, a shaping optical system that uniformly shapes the spatial intensity distribution of the pulsed laser light that has passed through the telescope, a mask that allows the pulsed laser light shaped by the shaping optical system to pass through in a predetermined pattern, a field lens positioned between the shaping optical system and the mask, and a projection lens that reduces and projects the laser light that has passed through the pattern on the mask onto the donor substrate, and holds a translucent substrate 11 on which an adhesive film 12, which is the donor substrate, is formed, on the donor stage.

[0024] As the laser device, for example, an excimer laser that emits laser light with a wavelength of 180 nm to 360 nm can be used. The oscillation wavelengths of the excimer laser are, for example, 193, 248, 308, and 351 nm, and can be suitably selected from these oscillation wavelengths according to the light absorption properties of the adhesive film 12 material. Furthermore, if a release material is provided between the translucent substrate 11 and the adhesive film 12, the oscillation wavelength can be suitably selected from these wavelengths according to the light absorption properties of the release material material.

[0025] The mask uses a pattern in which window frames of a predetermined size are formed at a predetermined pitch so that the projection at the interface between the translucent substrate 11 and the adhesive film 12 results in a desired arrangement of laser light. The mask is patterned, for example, by chrome plating, so that the window areas that are not chrome plated transmit the laser light, while the chrome plated areas block the laser light.

[0026] The light emitted from the laser device enters the telescopic optical system and propagates to the shaping optical system beyond it. The laser light is adjusted by the telescopic optical system so that it is approximately parallel at any position within the X-axis movement range of the donor stage just before it enters the shaping optical system. Therefore, it always enters the shaping optical system at approximately the same size and angle (perpendicular).

[0027] The laser light that has passed through the shaping optical system enters the mask via a field lens that, in combination with the projection lens, constitutes an image-side telecentric reduction projection optical system. The laser light that has passed through the mask pattern has its propagation direction changed vertically downward by the reflected light mirror and enters the projection lens. The laser light emitted from the projection lens enters from the translucent substrate 11 side and is accurately projected onto a predetermined position on the adhesive film 12 formed on its surface (bottom surface) at a reduced size of the mask pattern.

[0028] There are no particular restrictions on the laser energy intensity used in laser irradiation, and it can be appropriately selected according to the purpose, but it is preferably between 5% and 100%, and more preferably between 5% and 50%. Laser energy intensity refers to a laser irradiation intensity of 10,000 mJ / cm². 2 This is the intensity expressed as a percentage of the output power, with the value set to 100. For example, a laser energy intensity of 10% means a laser irradiation intensity of 1,000 mJ / cm². 2 It means...

[0029] Furthermore, there are no particular restrictions on the number of laser irradiations, and they can be appropriately selected according to the purpose, but 1 to 10 times is preferable. The total laser irradiation intensity during laser irradiation is 500 mJ / cm². 2 More than 10,000mJ / cm 2 The following is preferable: 1,000 mJ / cm² 2 More than 5,000mJ / cm 2 The following is more preferable. Here, the total laser irradiation intensity is the irradiation intensity calculated as the sum of the laser irradiation intensities of n laser irradiations during the laser irradiation. Here, "n" indicates the number of laser irradiations.

[0030] As a laser irradiation device, pulsed laser ablation devices such as the LMT-200 (manufactured by Toray Engineering Co., Ltd.), C.MSL-LLO1.001 (manufactured by Takano Corporation), and DFL7560L (manufactured by DISCO Corporation) can be used.

[0031] By using such a lifting device, a shock wave can be generated in the adhesive film 12 irradiated with laser light at the interface between the translucent substrate 11 and the adhesive film 12, causing the removal portion 12B to peel off and be removed from the translucent substrate 11, and allowing the individual pieces 12A of the adhesive film 12 to be arranged on the translucent substrate 11 with high precision and efficiency.

[0032] Furthermore, when individual pieces are prepared using a lifting device, the reaction rate of the individual pieces is preferably 25% or less, more preferably 20% or less, and even more preferably 15% or less. This allows for excellent transferability. The reaction rate of the adhesive film before laser irradiation and the individual pieces obtained after laser irradiation can be determined, for example, by measuring the rate of decrease of reactive groups using FT-IR. For example, in the case of an adhesive film utilizing the reaction of an epoxy compound, the IR spectrum is measured by irradiating the sample with infrared light, and the methyl group (2930cm²) in the IR spectrum is determined. -1 (Nearby) and epoxy group (914cm) -1 The peak height (in the vicinity) can be measured and calculated as the ratio of the peak height of the epoxy group to the peak height of the methyl group before and after the reaction (e.g., before and after laser irradiation), as shown in the formula below. The reaction rate may also be determined from the raw material of individual pieces.

[0033] Response rate (%) = {1 - (a / b) / (A / B)} × 100 In the above formula, A is the peak height of the epoxy group before the reaction, B is the peak height of the methyl group before the reaction, a is the peak height of the epoxy group after the reaction, and b is the peak height of the methyl group after the reaction. If other peaks overlap with the epoxy group peak, the peak height of the fully cured (100% reaction rate) sample should be set to 0%.

[0034] [Transferring individual pieces from a translucent substrate to a transfer material] Next, as shown in Figure 2, individual pieces 12A of the adhesive film 12 arranged on the translucent substrate 11 are transferred to the elastic resin layer 22 on the substrate 21. The substrate 21 and the elastic resin layer 22 constitute a transfer material, and the transfer material transfers the individual pieces 12A of the adhesive film 12 from the translucent substrate 11.

[0035] The substrate 21 is a support film that supports the elastic resin layer 22. Examples of the substrate 21 include PET (Poly Ethylene Terephthalate), OPP (Oriented Polypropylene), PMP (Poly-4-methylpentene-1), PTFE (Polytetrafluoroethylene), and glass.

[0036] The elastic resin layer 22 only needs to have rubber elasticity, and preferred examples of elastic resins include silicone resin, polyurethane resin, and acrylic resin. Among these, silicone resin can be preferably used from the viewpoint of shock absorption.

[0037] The peeling force of the adhesive film 12 from the elastic resin layer 22 is greater than the peeling force of the adhesive film 12 from the translucent substrate 11, and the peeling force of the adhesive film 12 from the elastic resin layer 22 is less than the peeling force of the adhesive film 12 from the substrate 31. This allows individual pieces 12A of the adhesive film 12 to be transferred from the translucent substrate 11 to the substrate 31 via the transfer material.

[0038] The peel force of the adhesive film 12 from the elastic resin layer 22 is preferably 50-500 mN / 5cm, more preferably 60-300 mN / 5cm, and even more preferably 80-200 mN / 5cm in a 90° peel test according to JIS K 6854-1:1999 (ISO 8510-1:1990). This allows for greater flexibility in the formulation of the adhesive film, as the peel force of the adhesive film from the substrate does not need to be excessively high. The peel force of the elastic resin layer 22 can be adjusted by applying a release silicone or by increasing the hardness of the elastic resin layer 22 above the normal level.

[0039] The elastic resin layer 22 preferably has protrusions 22A arranged in a sequence of individual pieces 12A. The height of the protrusions 22A is preferably greater than or equal to the wiring height of the substrate 31, preferably 1 μm or more, more preferably 5 μm or more, and even more preferably 10 μm or more. The size of the tip surface of the protrusion 22A may be greater than or equal to the size of the individual piece 12A, or less than or equal to the size of the individual piece 12A. The upper limit of the size of the tip surface of the protrusion 22A may be 200 μm or less, preferably 150 μm or less, more preferably 50 μm or less, and even more preferably 20 μm or less. The lower limit of the size of the tip surface of the protrusion 22A is preferably 50 μm or more, preferably 30 μm or more, and even more preferably 5 μm or more. It is desirable to satisfy these conditions in order to set the individual pieces of the adhesive film in the predetermined positions. Here, the size of the tip surface of the protrusion 22A refers to the longer side if it has both a long and short side, for example, as in a roughly rectangular shape. If it is circular, it refers to the diameter. The elastic resin layer 22 has protrusions 22A, which allows it to conform to steps and apply pressure during the transfer process, resulting in excellent transferability. In this specification, a transfer material having protrusions 22A on the elastic resin layer 22 is referred to as a stamp material.

[0040] [Transfer process (B1)] Figure 3 is a diagram illustrating the transfer process according to the first embodiment. As shown in Figure 3, in the transfer process (B1), the base material 21 is pressed onto the substrate 31, and the individual pieces 12A of the adhesive film arranged on the elastic resin layer 22 are transferred to the substrate 31. Good transferability can be obtained by pressing the transfer material onto the substrate 31 and transferring the individual pieces 12A of the adhesive film from the transfer material to the substrate 31. In particular, by using a stamp material having protrusions 22A on the elastic resin layer 22, it is possible to apply pressure while following the steps, and extremely excellent transferability can be obtained.

[0041] The substrate 31 is not particularly limited, but for example, a substrate on which light-emitting elements are arranged in units of subpixels constituting one pixel can be used. The substrate on which light-emitting elements are arranged comprises a circuit pattern for a first conductivity type and a circuit pattern for a second conductivity type on the substrate, and has a first electrode and a second electrode at positions corresponding to, for example, the first conductivity type electrode on the p side and the second conductivity type electrode on the n side, respectively, so that the light-emitting elements are arranged in units of subpixels constituting one pixel, and forms circuit patterns such as data lines and address lines for matrix wiring, so that the light-emitting elements corresponding to each subpixel constituting one pixel can be turned on and off. The substrate may also be a light-transmitting material such as glass or PET (Polyethylene Terephthalate). The circuit patterns, first electrode and second electrode may also be transparent conductive films such as ITO (Indium-Tin-Oxide), IZO (Indium-Zinc-Oxide), ZnO (Zinc-Oxide), or IGZO (Indium-Gallium-Zinc-Oxide).

[0042] If the substrate 31 is a substrate on which light-emitting elements are arranged, in the transfer step (B1), the individual pieces 12A of the adhesive film can be arranged in units of one pixel (for example, one pixel consisting of one RGB set), or in units of subpixels (for example, any RGB) that make up one pixel. This makes it possible to accommodate light-emitting element arrays ranging from high PPI (Pixels Per Inch) to low PPI. Individual pieces 12A may be provided to accommodate multiple light-emitting elements, individual pieces 12A may be provided to accommodate each individual light-emitting element, or individual pieces 21 may be provided to accommodate each electrode of the light-emitting element. Alternatively, the individual pieces 12A may be individually spaced apart only on the electrodes on the substrate 31 side, so that the electrodes of the micro-LED light-emitting element array are connected by each spaced-apart individual piece 12A.

[0043] In the transfer step (B1), it is preferable to arrange the individual pieces 12A of the adhesive film in units of one pixel or a plurality of pixels. For example, in the case of RGB, since the light-emitting elements are arranged in sets of 3 pixels or sets of 6 pixels including 3 redundant circuit pixels of RGB, the adhesive film may be transferred to a set of 6 pixels, may be transferred in units of one pixel, or may be arranged in units of electrodes. On the other hand, in order to improve productivity, the adhesive film may be transferred within a range that does not impair transparency, for example, within a range of 1 mm × 1 mm.

[0044] Also, the average transmittance of visible light after the individual piece 12A is placed (provided) on the substrate 31 is preferably 20% or more, more preferably 35% or more, and even more preferably 50% or more. Thereby, a display device having excellent light transmittance and aesthetic appearance can be obtained. Even when it is not a non-transparent substrate, the average transmittance can be obtained by attaching the individual piece to a plain glass or a transparent substrate for evaluation and using this as a reference (Ref). The average transmittance of visible light provided with the light-emitting element will be lower. When the light-emitting element is mounted, it is assumed that the measurement is made in a state where the light-emitting element is not lit. The average transmittance of visible light can be measured using, for example, an ultraviolet-visible spectrophotometer.

[0045] [Mounting step (C1)] In the mounting step (C1), electronic components are mounted on the individual pieces 12A of the adhesive film transferred to the substrate 31. Examples of the electronic components include chip components such as semiconductor chips and LED chips, and particularly preferably, micro-sized LED chips can be used.

[0046] The LED chip includes a main body, a first conductivity type electrode, and a second conductivity type electrode 2, and a so-called flip chip type having a horizontal structure in which the first conductivity type electrode and the second conductivity type electrode are arranged on the same side can be used. The main body is, for example, a first conductivity type clad layer made of n-GaN, and for example, In x Al y Ga 1-x-yThe device comprises an active layer made of N layers and a second conductivity type cladding layer made of, for example, p-GaN, and has a so-called double heterostructure. The first conductivity type electrode is formed in a part of the first conductivity type cladding layer by a passivation layer, and the second conductivity type electrode is formed in a part of the second conductivity type cladding layer. When a voltage is applied between the first conductivity type electrode and the second conductivity type electrode, carriers concentrate in the active layer and light emission occurs through recombination. Furthermore, when an adhesive film (NCF: Non Conductive Film) is used as the adhesive film, it is preferable that the first conductivity type electrode and the second conductivity type electrode have a bump shape.

[0047] In the mounting process (C1), first, electronic components are mounted on individual pieces 12A of the substrate 31. There are no particular limitations on the method of mounting electronic components onto the substrate 31, but if the electronic component is a light-emitting element, examples include a method of directly transferring and placing the light-emitting element from the wafer substrate to the substrate 31 using the laser lift-off method (LLO method), or a method of transferring and placing the light-emitting element from the transfer substrate to the substrate 31 using a transfer substrate to which the light-emitting element has been previously attached.

[0048] Next, the individual pieces 12A of the adhesive film are cured to fix the electronic components arranged in predetermined positions on the substrate 31. For example, if the adhesive film contains a thermosetting binder, the electronic components are thermocompressed onto the substrate 31 via the individual pieces 12A of the adhesive film. As a method for thermocompressing the electronic components onto the substrate 31, a thermocompression bonding method used for known curable resin films can be appropriately selected and used. For example, the thermocompression bonding conditions are a temperature of 150°C to 260°C, a pressure of 1 MPa to 60 MPa, and a time of 5 seconds to 300 seconds. A cured resin film is formed as the thermosetting binder hardens.

[0049] [Differentiation] In the first embodiment, a portion of the adhesive film 12 is removed by laser ablation to arrange individual pieces 12A of the adhesive film 12 on the translucent substrate 11. However, the method of forming the individual pieces is not particularly limited, and for example, methods such as removing a portion of the adhesive film 12 by laser, cutting, etc., or forming them by printing, inkjet, etc., can be used. Furthermore, when forming individual pieces by printing, inkjet, etc., PET (Polyethylene Terephthalate), PC (Polycarbonate), polyimide, etc. can be used as the translucent substrate 11.

[0050] Furthermore, for example, if the electronic component is an LED, and a non-functioning LED is removed with a laser after LED mounting, there may be unevenness at the removal site. However, by using a transfer material in which a single protrusion greater than the height of the electronic component is formed on the elastic resin layer 22, individual pieces 12A of the adhesive film 12 can be reliably transferred to the removal site.

[0051] A method for manufacturing such a connection structure includes a removal step of removing light-emitting elements at predetermined positions on a connection structure on which light-emitting elements are arranged and mounted using a laser; a transfer step of using a transfer material having protrusions formed in an elastic resin layer that are greater than the height of the light-emitting elements, attaching individual pieces of adhesive film to the protrusions, and transferring the individual pieces to the predetermined positions removed by the laser; and a mounting step of mounting light-emitting elements on the individual pieces of adhesive film transferred to the predetermined positions. By using a transfer material having protrusions formed in an elastic resin layer that are greater than the height of the light-emitting elements, even if there are irregularities in the removal area, it is possible to apply pressure while following the irregularities, and extremely excellent transferability can be obtained.

[0052] Furthermore, while the first embodiment illustrates the process of thermocompressing electronic components via individual pieces of adhesive film, if the adhesive film contains solder particles, for example, after temporarily fixing the electronic components onto the adhesive film, reflow soldering may be performed under conditions such as a temperature of 200-300°C and a time of 30 seconds or more.

[0053] Furthermore, although the first embodiment exemplified a horizontally structured LED chip as an electronic component, a vertically structured LED chip in which the first conductivity type electrode and the second conductivity type electrode are arranged facing each other via an epitaxial layer may also be used. In this case, either the first conductivity type electrode or the second conductivity type electrode may be connected to the electrode on the substrate with a piece of adhesive film, and the other electrode may be formed as a transparent electrode, for example, as a data line or address line pattern in a matrix wiring.

[0054] <Second Embodiment> The following describes the arrangement step (A2), transfer step (B2), and mounting step (C2) in the manufacturing method of the connection structure according to the second embodiment, with reference to Figures 4 and 5.

[0055] [Array process (A2)] Figure 4 shows the arrangement process according to the second embodiment. As shown in Figure 4, in the arrangement process (A2), an adhesive film 42 formed on a translucent substrate 41 that is transparent to laser light is placed opposite an elastic resin 52 on a substrate 51, and individual pieces 42A of the adhesive film 42 are transferred to the elastic resin 52 by the laser lift-off method and arranged. The substrate 51 and the elastic resin layer 52 constitute a transfer material, and the transfer material transfers the individual pieces 42A of the adhesive film 42 from the translucent substrate 41.

[0056] The size of the individual pieces 42A, the arrangement of the individual pieces 42A, and the distance between the individual pieces 42A are the same as the size of the individual pieces 12A, the arrangement of the individual pieces 12A, and the distance between the individual pieces 12A in the first embodiment, so their description is omitted here. Also, the translucent substrate 41, adhesive film 42, substrate 51, and elastic resin 52 are the same as the translucent substrate 11, adhesive film 12, substrate 21, and elastic resin 22 in the first embodiment, so their description is omitted here. Furthermore, a release material may be provided between the translucent substrate 41 and the adhesive film 42.

[0057] As shown in Figure 4, laser light is irradiated from the translucent substrate 41 side to peel the individual pieces 42A from the translucent substrate 41 and deposit them onto the elastic resin 52, leaving the removal portion 42B on the translucent substrate 41. For transferring the individual pieces 42A of the adhesive film 42, for example, a lifting device similar to the one described above can be used.

[0058] A translucent substrate 41 on which an adhesive film 42, which is a donor substrate, is formed is held on a donor stage, and a substrate 51 on which an elastic resin 52, which is a receptor substrate, is formed is held on a receptor stage. The distance between the adhesive film 42 and the elastic resin 52 is, for example, 10 to 100 μm. The oscillation wavelength of the laser device is, for example, 193, 248, 308, or 351 nm, and can be suitably selected from these oscillation wavelengths depending on the light absorption properties of the adhesive film 42 or the release material. The mask uses a pattern in which an array of windows of a predetermined size is formed at a predetermined pitch so that the projection at the interface between the translucent substrate 41 and the adhesive film 42 results in a desired laser beam array.

[0059] By using a lifting device, a shock wave is generated in the adhesive film 42 at the interface between the translucent substrate 41 and the adhesive film 42, when irradiated with laser light. This peels off multiple individual pieces 42A from the translucent substrate 41 and lifts them toward the substrate 51, allowing the multiple individual pieces 42A to land at predetermined positions on the substrate 51 via the elastic resin 52. This enables the transfer and arrangement of individual pieces 42A of the adhesive film 42 onto the substrate 51 with high precision and efficiency, thereby shortening the cycle time.

[0060] Furthermore, the reaction rate of the individual adhesive film pieces 42A transferred using the lift device is preferably 25% or less, more preferably 20% or less, and even more preferably 15% or less, similar to the case where individual pieces are produced using the lift device. A reaction rate of 25% or less for the individual pieces 42A makes it possible to thermocompression bond electronic components in the mounting process (C2). The reaction rate can be determined, as described above, for example, using FT-IR.

[0061] [Transfer process (B2)] Figure 5 is a diagram illustrating the transfer process according to the second embodiment. As shown in Figure 5, in the transfer process (B2), the base material 51 is pressed onto the substrate 61, and the individual pieces 42A of the adhesive film arranged on the elastic resin layer 52 are transferred to the substrate 61. Good transferability can be obtained by pressing the transfer material onto the substrate 61 and transferring the individual pieces 42A of the adhesive film from the transfer material to the substrate 61. In particular, by using a stamp material having protrusions on the elastic resin layer 52, it is possible to apply pressure while following the steps, and very excellent transferability can be obtained. The substrate 61 is the same as the substrate 31 in the first embodiment, so its description is omitted here.

[0062] [Implementation Process (C2)] In the mounting process (C2), electronic components are mounted on individual pieces 42A of the adhesive film transferred to the substrate 61. The mounting process (C2) is the same as the mounting process (C1) in the first embodiment, so its explanation is omitted here.

[0063] <3. Individually packaged adhesive film> The individualized adhesive film according to this embodiment consists of individual pieces of adhesive film arranged on a substrate. As shown in Figure 1, an example is obtained in which a portion of the adhesive film 12 formed on a translucent substrate 11 that is transparent to laser light is removed by laser ablation, and individual pieces 12A of the adhesive film 12 are arranged on the translucent substrate 11.

[0064] Furthermore, the individualized adhesive film according to this embodiment is formed by arranging individual pieces of adhesive film on a substrate via an elastic resin layer. Examples include, as shown in Figure 2, transferring individual pieces 12A of adhesive film 12 arranged on a translucent substrate 11 to an elastic resin layer 22 on a substrate 21, or, as shown in Figure 4, irradiating with laser light from the translucent substrate 41 side to peel individual pieces 42A from the translucent substrate 41 and causing them to land on the elastic resin 52.

[0065] The size of individual pieces 12A and 42A, the arrangement of individual pieces 12A and 42A, and the distance between individual pieces 12A and 42A are the same as those described in the first embodiment, so their description is omitted here.

[0066] The adhesive film is not particularly limited as long as it hardens with energy such as heat or light, and can be appropriately selected from, for example, thermosetting binders, photocuring binders, and heat / light combined curing binders. As a specific example, a thermosetting binder containing a film-forming resin, a thermosetting resin, and a curing agent will be described. The thermosetting binder is not particularly limited and can be, for example, a thermoanionic polymerization resin composition containing an epoxy compound and a thermoanionic polymerization initiator, a thermocation polymerization resin composition containing an epoxy compound and a thermocation polymerization initiator, or a thermoradical polymerization resin composition containing a (meth)acrylate compound and a thermoradical polymerization initiator. Note that (meth)acrylate compounds include both acrylic monomers (oligomers) and methacrylic monomers (oligomers).

[0067] Among these thermosetting binders, it is preferable that the thermosetting resin contains an epoxy compound and the curing agent is a thermal cationic polymerization initiator. This suppresses the curing reaction when forming individual pieces with laser light, and allows for rapid curing by heat during thermal bonding. In the following, a specific example will be given of a thermal cationic polymerization resin composition containing a film-forming resin, an epoxy compound, and a thermal cationic polymerization initiator.

[0068] The film-forming resin is, for example, a high molecular weight resin with an average molecular weight of 10,000 or more, and from the viewpoint of film formation, an average molecular weight of about 10,000 to 80,000 is preferred. Examples of film-forming resins include various resins such as butyral resin, phenoxy resin, polyester resin, polyurethane resin, polyester urethane resin, acrylic resin, and polyimide resin, which may be used individually or in combination of two or more types. Among these, butyral resin can be preferably used from the viewpoint of film formation state and connection reliability. A specific example of butyral resin is, for example, the product name "KS-10" manufactured by Sekisui Chemical Co., Ltd. The content of the film-forming resin is preferably 20 to 70 parts by mass, more preferably 30 to 60 parts by mass or less, and even more preferably 45 to 55 parts by mass, per 100 parts by mass of the thermosetting binder.

[0069] The epoxy compound is not particularly limited as long as it is an epoxy compound having one or more epoxy groups in its molecule. For example, it may be a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, or a urethane-modified epoxy resin. Among these, hydrogenated bisphenol A type glycidyl ether can be preferably used, for example, from the viewpoint of constructing an adhesive film having a maximum absorption wavelength in the range of 180 nm to 360 nm. A specific example of hydrogenated bisphenol A type glycidyl ether is, for example, the product name "YX8000" manufactured by Mitsubishi Chemical Corporation. The content of the epoxy compound is preferably 30 to 60 parts by mass, more preferably 35 to 55 parts by mass or less, and even more preferably 35 to 45 parts by mass, per 100 parts by mass of the thermosetting binder.

[0070] As the thermal cationic polymerization initiator, known thermal cationic polymerization initiators for epoxy compounds can be used. For example, those that generate an acid capable of cationic polymerization of cationic polymer-type compounds upon heating, such as known iodonium salts, sulfonium salts, phosphonium salts, ferrocenes, etc., can be used. Among these, aromatic sulfonium salts that exhibit good latent properties with respect to temperature are preferably used. A specific example of an aromatic sulfonium salt-based polymerization initiator is, for example, the product name "SI-60L" manufactured by Sanshin Chemical Industry Co., Ltd. The content of the thermal cationic polymerization initiator is preferably 1 to 20 parts by mass, more preferably 5 to 15 parts by mass or less, and even more preferably 8 to 12 parts by mass, per 100 parts by mass of the thermosetting binder.

[0071] In addition, other additives that may be incorporated into the thermosetting binder may include, as needed, rubber components, inorganic fillers, silane coupling agents, diluent monomers, fillers, softeners, colorants, flame retardants, thixotropic agents, etc.

[0072] The rubber component is not particularly limited as long as it is an elastomer with high cushioning (shock absorption) properties. Specific examples include acrylic rubber, silicone rubber, butadiene rubber, and polyurethane resin (polyurethane elastomer). Inorganic fillers such as silica, talc, titanium dioxide, calcium carbonate, and magnesium oxide can be used. Inorganic fillers may be used alone or in combination of two or more types. Silane coupling agents such as epoxy-based silane coupling agents and acrylic-based silane coupling agents can be used.

[0073] The durometer A hardness of the adhesive film is 20 to 40, preferably 20 to 35, and more preferably 20 to 30. If the durometer A hardness is too high, the adhesive film is too hard, which tends to cause defects such as deformation and breakage of the chip components. If the durometer A hardness is too low, the adhesive film is too soft, which tends to cause defects such as displacement of the chip components. The durometer A hardness of the adhesive film can be measured using durometer A in accordance with JIS K 6253, and can be measured using rubber hardness (Japanese Industrial Standard JIS-A hardness).

[0074] The storage modulus of elasticity in a dynamic viscoelasticity test using an indentation test device for adhesive films at a temperature of 30°C and a frequency of 200Hz is preferably 60MPa or less, more preferably 30MPa or less, and even more preferably 10MPa or less. If the storage modulus of elasticity at 30°C and 200Hz is too high, the impact of the chip component ejected at high speed by laser irradiation cannot be absorbed, and the transfer rate of the chip component tends to decrease. The storage modulus of elasticity at 30°C and 200Hz can be measured using an indentation test device, for example, by using a flat punch with a diameter of 100μm, setting the target indentation depth to 1μm, and sweeping in the frequency range of 1 to 200Hz.

[0075] Furthermore, the storage modulus of the cured adhesive film at 30°C, measured in tensile mode according to JIS K7244, is preferably 100 MPa or higher, and more preferably 2000 MPa or higher. If the storage modulus at 30°C is too low, good conductivity cannot be obtained, and connection reliability tends to decrease. The storage modulus at 30°C can be measured in tensile mode using a viscoelasticity tester (Vibron) in accordance with JIS K7244, for example, under measurement conditions of a frequency of 11 Hz and a heating rate of 3°C / min.

[0076] Furthermore, the adhesive film is preferably a conductive film or an anisotropic conductive film (ACF) that further contains conductive particles. The conductive particles can be appropriately selected from those used in known anisotropic conductive films. Examples include metal particles such as nickel, copper, silver, gold, palladium, and solder, or metal-coated resin particles in which the surface of resin particles such as polyamide and polybenzoguanamine is coated with a metal such as nickel or gold. This allows for electrical conductivity even when the chip component does not have connection points such as solder bumps.

[0077] An anisotropic conductive film is preferably a particle-aligned film in which conductive particles are arranged in the planar direction, from the viewpoint of laser transferability. The arrangement is preferably repeating and regular, and the shape is not particularly limited, but examples include grid arrangements such as square, hexagonal, orthorhombic, and rectangular grids. The arrangement of conductive particles in the planar direction makes it easier to stabilize their capture by electrodes, thereby improving conductivity and insulation.

[0078] Furthermore, the anisotropic conductive film can be configured to have a distribution region where conductive particles are concentrated at positions corresponding to the electrodes, and a region where conductive particles are absent at other positions. From the viewpoint of capture, the distribution region is preferably in the range of 0.8 times or more the electrode size, preferably 1.0 times or more, and 1.2 times or less the electrode size, preferably 1.5 times or less, from the viewpoint of reducing conductive particles. The removed portion can be reused for quality control or inspection purposes.

[0079] Furthermore, the particle surface density of the anisotropic conductive film can be appropriately designed according to the electrode size of the chip component, similar to the cured film, and the lower limit of the particle surface density is 500 particles / mm². 2 More than 20000 pieces / mm 2 More than 40000 pieces / mm 2 More than 50000 pieces / mm 2 The above can be achieved, and the upper limit of the particle surface density is 1,500,000 particles / mm³. 2 Below 1000000 pieces / mm2 Below 500000 pieces / mm 2 Below 100000 pieces / mm 2 The following can be achieved. This allows for excellent conductivity and insulation even when the electrode size of the chip component is small. The particle surface density of the cured film of an anisotropic conductive film is that of the portion where the conductive particles are arranged when the film is formed during manufacturing. When determining the particle number density from multiple pieces, the particle surface density can be determined from the area obtained by subtracting the space between pieces from the area including the pieces and the space between them, and the number of particles.

[0080] The particle size of the conductive particles is not particularly limited, but the lower limit of the particle size is preferably 1 μm or more, and the upper limit of the particle size is preferably 50 μm or less, and more preferably 20 μm or less, from the viewpoint of the capture efficiency of conductive particles in the connecting structure. Depending on the size of the electrode, it may be required to be less than 3 μm, preferably less than 2.5 μm. The particle size of the conductive particles can be the value measured by an image-type particle size analyzer (for example, FPIA-3000: manufactured by Malvern). The number of particles is preferably 1000 or more, preferably 2000 or more.

[0081] The lower limit of the thickness of the anisotropic conductive film may be, for example, 60% or more of the particle diameter of the conductive particles, or 90% or more to accommodate relatively small particle diameters, but it is preferably 1.3 times or more the conductive particle diameter or 3 μm or more. The upper limit of the thickness of the anisotropic conductive film may be, for example, 20 μm or less or 3 times or less the particle diameter of the conductive particles, preferably 2 times or less. Furthermore, the anisotropic conductive film may be laminated with adhesive layers or tack layers that do not contain conductive particles, and the number of layers and the lamination surface can be appropriately selected according to the target and purpose. In addition, the same insulating resin as that of the anisotropic conductive film can be used for the adhesive layers or tack layers. The film thickness can be measured using a known micrometer or digital thickness gauge. The film thickness can be determined by measuring at, for example, 10 or more locations and averaging the results. [Examples]

[0082] <4. Examples> The following describes examples of how this technology can be used. However, this technology is not limited to these examples.

[0083] [Preparation of particle alignment film] A mixture was prepared consisting of 50 wt% polyvinyl butyral resin (product name: KS-10, manufactured by Sekisui Chemical Co., Ltd.), 40 wt% hydrogenated bisphenol A type glycidyl ether (product name: YX8000, manufactured by Mitsubishi Chemical Corporation), and 10 wt% cationic polymerization initiator (product name: SI-60L, manufactured by Sanshin Chemical Industry Co., Ltd.).

[0084] The mixed resin was applied to a 0.5 mm thick glass plate that had been treated with silicone release agent and dried (60°C - 3 min) to obtain a 4 μm thick resin film. The resin film was bonded to a substrate on which conductive particles (average particle size 2.2 μm, manufactured by Sekisui Chemical Co., Ltd.) were arranged in a hexagonal lattice pattern. The conductive particles were then transferred to the resin film, resulting in a film with a thickness of 4.0 μm and a particle density of 58,000 particles / mm². 2 A particle alignment film was obtained. The arrangement of conductive particles and their transfer to the resin film were carried out in accordance with the description in Japanese Patent No. 6187665.

[0085] [Preparation of a film with aligned individual particles] A portion of the particle alignment film on the fabricated glass plate was removed by laser ablation, and individual pieces of the particle alignment film, each 4.0 μm thick and measuring 15 μm × 30 μm, were arranged on the glass plate in a grid pattern with a center point distance of 200 μm. The laser irradiation conditions were as follows. Laser type: YAG Laser Laser wavelength: 266nm Laser energy intensity: 10% Number of laser treatments: 1

[0086] [Measurement of peeling force of particle-aligned film] (1) The peel force of the particle alignment film was measured against a glass plate (support substrate for the particle alignment film) that had been treated with silicone. A 1 mm wide PP (Poly Propylene) tape was attached to the particle alignment film side, and a 90° peel test was performed using a tensile testing machine in accordance with JIS K 6854-1:1999 (ISO 8510-1:1990). As a result, the peel force in the 90° peel test was 20 mN / 5 cm. (2) The peel force of the particle alignment film to the silicone transfer material (base material for the stamp material) was measured. The particle alignment film was bonded to the transfer material under the conditions of a temperature of 50°C and a pressure of 1 MPa. A 1 mm wide PP (Poly Propylene) tape was attached to the particle alignment film side, and a 90° peel test was performed using a tensile testing machine in accordance with JIS K 6854-1:1999 (ISO 8510-1:1990). As a result, the peel force in the 90° peel test was 100 mN / 5 cm. (3) The peel force of the particle alignment film on adherend A (0.5 mm thick, flat quartz glass plate) was measured. The particle alignment film was bonded to adherend A at a temperature of 50°C and a pressure of 1 MPa. A 1 mm wide PP (Poly Propylene) tape was attached to the particle alignment film side, and a 90° peel test was performed using a tensile testing machine in accordance with JIS K 6854-1:1999 (ISO 8510-1:1990). As a result, the peel force in the 90° peel test was 150 mN / 5 cm or more. (4) The peel force of the particle alignment film on adherend B (thickness 0.5 mm, 200 μm P, 100 μm wide Al pattern, pattern thickness 1 μm) was measured. The particle alignment film was bonded to adherend B under conditions of temperature 50°C and pressure 1 MPa, and a 1 mm wide PP (Poly Propylene) tape was attached to the particle alignment film side. A 90° peel test was performed using a tensile testing machine in accordance with JIS K 6854-1:1999 (ISO 8510-1:1990). As a result, the peel force in the 90° peel test was 170 mN / 5 cm or more.

[0087] [Evaluation of the transferability of individual particles in particle-aligned films] Individual pieces of a particle alignment film with a thickness of 4.0 μm and dimensions of 15 μm × 30 μm were transferred to substrate A or substrate B. The pieces were arranged in a grid pattern of 50 × 50 pieces so that the distance between center points was 200 μm.

[0088] Figure 6 shows the arrangement of individual pieces of the particle alignment film on the substrate B. As shown in Figure 6, for the substrate B71, the individual pieces 81A of the particle alignment film were arranged so that half their width (7.5 μm) overlapped the Al pattern 72, and the step height was evaluated.

[0089] The number of individual particle alignment film fragments transferred to substrate A or substrate B was then counted and evaluated according to the following indicators. If the evaluation is C (transfer rate is less than 99.0%), productivity may decrease. A: Transcription rate of 99.9% or higher B: Transcription rate between 99.0% and less than 99.9% C: Transcription rate less than 99.0%

[0090] [Example 1] Individual pieces of the particle alignment film were transferred using a stamp material having protrusions. The stamp material has a silicone layer on a support substrate, and protrusions are formed on the silicone layer. The protrusions of the stamp material are arranged in a grid pattern of 50 × 50 pieces, with a center point distance of 200 μm, similar to the arrangement of the individual pieces. The tip shape of the protrusions is a rectangle of 15 μm × 30 μm, and the height of the protrusions is 20 μm.

[0091] The protrusions of the stamping material were aligned with the individual pieces of the particle alignment film arranged on the glass plate. The protrusions of the stamping material were then pressed against the individual pieces of the particle alignment film under conditions of 50°C and 1 MPa of pressure, transferring the individual pieces of the particle alignment film to the stamping material.

[0092] Next, individual pieces of the particle alignment film, which had been transferred to the stamp material, were pressed onto adherend A or adherend B under conditions of 50°C and 1 MPa, thereby transferring the individual pieces of the particle alignment film to adherend A or adherend B. Table 1 shows the evaluation results of the transferability of the individual pieces of the particle alignment film.

[0093] [Example 2] A particle alignment film and a silicone transfer material were placed opposite each other, and individual pieces of the particle alignment film, each 4.0 μm thick and measuring 15 μm × 30 μm, were arranged in a grid pattern on the silicone transfer material with a center point distance of 200 μm using a laser lift-off method. The silicone transfer material had a silicone layer on a support substrate, and the surface of the silicone layer was flat. The laser irradiation conditions were as follows. Laser type: YAG Laser Laser wavelength: 266nm Laser energy intensity: 10% Number of laser treatments: 1

[0094] Next, individual pieces of the particle alignment film, which had been transferred to the silicone transfer material, were pressed onto adherend A or adherend B under conditions of 50°C and 1 MPa, thereby transferring the individual pieces of the particle alignment film to adherend A or adherend B. Table 1 shows the evaluation results of the transferability of the individual pieces of the particle alignment film.

[0095] [Reference example 1] The particle alignment film was placed opposite either substrate A or substrate B, and individual pieces of the particle alignment film, each 4.0 μm thick and measuring 15 μm × 30 μm, were arranged in a grid pattern on substrate A or substrate B using the laser lift-off method, with a center point distance of 200 μm. The laser irradiation conditions were the same as in Example 2. Table 1 shows the evaluation results of the transferability of the individual pieces of the particle alignment film.

[0096] [Table 1]

[0097] As shown in Table 1, in Reference Example 1, individual pieces of the particle alignment film are transferred to the substrate by the laser lift-off method. Therefore, if there are irregularities on the substrate, such as steps including wiring and insulating films on the wiring surface, as in the case of adherend B, the transfer rate of the individual pieces of the particle alignment film may decrease, potentially reducing productivity.

[0098] On the other hand, in Examples 1 and 2, since the individual pieces of the particle alignment film are attached by pressing the silicone layer of the stamping material and transfer material, good transferability of the individual pieces of the particle alignment film can be obtained even on substrates with irregularities including steps such as wiring and insulating films on the wiring surface, as was the case with substrate B, and productivity can be improved. In particular, in Example 1, the individual pieces of the particle alignment film are not ejected by the laser lift-off method, and the individual pieces of the particle alignment film are attached by pressing the protrusions of the silicone layer of the stamping material, so it is possible to apply pressure to follow the steps and obtain excellent transferability. [Explanation of symbols]

[0099] 11 Translucent substrate, 12 Adhesive film, 12A individual piece, 12B individual piece, 21 Substrate, 22 Elastic resin layer, 22 Protrusion, 31 Substrate, 41 Translucent substrate, 42 Adhesive film, 42A individual piece, 51 Substrate, 52 Elastic resin layer, 61 Substrate, 71 Adhesion B, 72 Al pattern, 81A individual piece

Claims

1. an arranging step of arranging the adhesive film pieces on the substrate via an elastic resin layer; a transfer step of pressing the base material against a substrate and transferring the adhesive film pieces arranged on the elastic resin layer to the substrate; a mounting step of mounting electronic components on the pieces of adhesive film transferred to the substrate, The size of the individual pieces is 200 μm or less, A method for manufacturing a connection structure, wherein the peel strength of the adhesive film from the elastic resin layer is smaller than the peel strength of the adhesive film from the substrate.

2. A method for manufacturing a connection structure as described in claim 1, wherein in the arrangement process, a portion of an adhesive film formed on a translucent substrate that is translucent to laser light is removed by laser ablation to arrange individual pieces of the adhesive film on the translucent substrate, and the individual pieces of the adhesive film arranged on the translucent substrate are transferred to the elastic resin layer.

3. A method for manufacturing a connection structure as described in claim 1, wherein in the arrangement process, an adhesive film formed on a translucent substrate that is translucent to laser light is placed opposite the elastic resin on the substrate, and individual pieces of the adhesive film are transferred to the elastic resin by a laser lift-off method and arranged.

4. The method for producing a connection structure according to claim 1 , wherein the reaction rate of the individual pieces of the adhesive film is 25% or less.

5. The method for manufacturing a connection structure according to any one of claims 1 to 3, wherein the peel strength of the adhesive film from the elastic resin layer is 50 to 500 mN / 5 cm in a 90° peel test in accordance with JIS K 6854-1: 1999 (ISO 8510-1: 1990).

6. The method for manufacturing a connection structure according to claim 1 , wherein the elastic resin layer has protrusions in the arrangement of the individual pieces.

7. The method for manufacturing a connection structure according to claim 6, wherein the height of the protrusion is equal to or greater than the height of the wiring on the substrate.

8. The method for manufacturing a connection structure according to any one of claims 1 to 3, wherein the adhesive film is a conductive film or an anisotropic conductive film.

9. 4. The method for manufacturing a connection structure according to claim 1, wherein the adhesive film is a particle-aligned film in which conductive particles are aligned in the planar direction.

10. The method for manufacturing a connection structure according to any one of claims 1 to 3, wherein the elastic resin layer is a silicone resin layer.

11. The method for manufacturing a connection structure according to claim 1 , wherein the electronic component is a light-emitting element.

12. an arranging step of arranging the adhesive film pieces on the substrate via an elastic resin layer; a transfer step of pressing the base material against a substrate and transferring the adhesive film pieces arranged on the elastic resin layer to the substrate, The size of the individual pieces is 200 μm or less, A method for transferring an individualized adhesive film, wherein the peeling force of the adhesive film from the elastic resin layer is smaller than the peeling force of the adhesive film from the substrate.

13. a removing step of removing, by laser, light emitting elements at predetermined positions of the connection structure in which the light emitting elements are arranged and mounted; a transfer step of using a transfer material having a protrusion formed on an elastic resin layer, the protrusion having a height equal to or greater than the height of the light-emitting element, attaching a piece of adhesive film to the protrusion, and transferring the piece to the predetermined position removed by the laser; a mounting step of mounting a light emitting element on the piece of adhesive film transferred to the predetermined position; A method for manufacturing a connection structure having the above structure.

14. Individual pieces of adhesive film are arranged on a substrate, The size of the individual pieces is 200 μm or less, and the reaction rate of the individual pieces is 25% or less.

15. A method for producing a singulated adhesive film, comprising arranging individual pieces of adhesive film on a substrate, the method comprising: A method for producing an individualized adhesive film, wherein the size of the individual pieces is 200 μm or less and the reaction rate of the individual pieces is 25% or less.

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