Stage, film forming apparatus, and film processing apparatus

Abstract

To provide a stage that precisely controls the temperature of a substrate.SOLUTION: A stage includes a first support plate, a second support plate under the first support plate, a shaft located below the second support plate and overlapping with the first support plate and the second support plate, and at least one sheath heater penetrating the second support plate. At least one sheath heater is arranged so as to be parallel to the upper surface of the second support plate and to extend on a first surface and a second surface that are different in distance from the first support plate.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] An embodiment of the present invention relates to a stage for supporting a substrate, and a film forming apparatus or a film processing apparatus including the stage. [Background technology]

[0002] Semiconductor devices are installed in almost all electronic devices and play an important role in the function of electronic devices. Semiconductor devices utilize the semiconducting properties of silicon and other materials, and are constructed by stacking various patterned semiconductor films, insulating films, and conductive films on a substrate. These films are formed using deposition, sputtering, chemical vapor deposition (CVD), or chemical reactions on the substrate, and are patterned by a photolithography process. The photolithography process includes forming a resist film on the film to be patterned, exposing the resist film to light, forming a resist mask by developing, partially removing the film by etching, and removing the resist mask.

[0003] The above-mentioned film characteristics are greatly influenced by the conditions when the film is formed or patterned. One of these conditions is the temperature of the substrate. In many cases, the temperature of the substrate is controlled by adjusting the temperature of a stage on which the substrate is placed. In order to heat the substrate uniformly and suppress the temperature distribution within the substrate, a sheath heater is widely used as a heater for heating the stage. For example, Patent Document 1 discloses a stage equipped with multiple sheath heaters in which an electric heating wire (heater wire) is arranged within a metal sheath. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2009-91660 A Summary of the Invention [Problem to be solved by the invention]

[0005] An object of an embodiment of the present invention is to provide a stage for precisely controlling the temperature of a substrate, or to provide a film forming apparatus or a film processing apparatus having the stage. [Means for solving the problem]

[0006] One embodiment of the present invention is a stage comprising a first support plate, a second support plate below the first support plate, a shaft located below the second support plate and overlapping the first support plate and the second support plate, and at least one sheathed heater penetrating the second support plate. The at least one sheathed heater is arranged to extend on a first surface and a second surface that are parallel to an upper surface of the second support plate and are at different distances from the first support plate. [Brief description of the drawings]

[0007] [Figure 1] 1A and 1B are a schematic perspective view and a top view of a stage according to an embodiment of the present invention. [Diagram 2] FIG. 2 is a schematic cross-sectional view of a stage according to the embodiment of the present invention. [Diagram 3] 1A and 1B are schematic top view and cross-sectional view of a conventional stage. [Figure 4] FIG. 2 is a schematic cross-sectional view of a stage according to the embodiment of the present invention. [Diagram 5] FIG. 2 is a schematic cross-sectional view of a stage according to the embodiment of the present invention. [Figure 6] FIG. 2 is a schematic cross-sectional view of a stage according to the embodiment of the present invention. [Figure 7] 2A and 2B are schematic top view and cross-sectional view of a stage according to an embodiment of the present invention. [Figure 8] FIG. 2 is a schematic cross-sectional view of a stage according to the embodiment of the present invention. [Figure 9] FIG. 2 is a schematic cross-sectional view of a stage according to the embodiment of the present invention. [Figure 10] FIG. 2 is a schematic top view of a stage according to the embodiment of the present invention. [Figure 11] FIG. 4 is a cross-sectional view of a sheath heater provided on a stage of an embodiment of the present invention. [Figure 12] FIG. 4 is a cross-sectional view of a sheath heater provided on a stage of an embodiment of the present invention. [Figure 13] FIG. 4 is a cross-sectional view of a sheath heater provided on a stage of an embodiment of the present invention. [Figure 14] FIG. 4 is a cross-sectional view of a sheath heater provided on a stage of an embodiment of the present invention. [Figure 15] FIG. 4 is a cross-sectional view of a sheath heater provided on a stage of an embodiment of the present invention. [Figure 16] 2A and 2B are schematic top view and cross-sectional view of a stage according to an embodiment of the present invention. [Figure 17] 1 is a schematic cross-sectional view of a film processing apparatus including a stage according to an embodiment of the present invention. [Figure 18] FIG. 1 is a schematic cross-sectional view of a film forming apparatus including a stage according to an embodiment of the present invention. [Figure 19] FIG. 1 is a schematic cross-sectional view of a film forming apparatus including a stage according to an embodiment of the present invention. [Figure 20] FIG. 1 is a schematic cross-sectional view of a film forming apparatus including a stage according to an embodiment of the present invention. [Figure 21] 2A and 2B are schematic top view and cross-sectional view of a stage according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, each embodiment of the invention disclosed in this application will be described with reference to the drawings. However, the present invention can be embodied in various forms without departing from the gist of the invention, and the present invention should not be interpreted as being limited to the description of the embodiments exemplified below.

[0009] In order to clarify the description, the drawings may show the width, thickness, shape, etc. of each part in a schematic manner compared to the actual embodiment, but these are merely examples and do not limit the interpretation of the present invention. In this specification and each drawing, elements having the same functions as those explained in the previous drawings may be given the same reference numerals, and duplicate explanations may be omitted.

[0010] In this specification and drawings, the same reference numeral is used to collectively represent multiple identical or similar components, and a lowercase alphabet is added to each of the multiple components to distinguish them from one another. The same reference numeral is used to distinguish multiple parts of a single component, and a hyphen and a natural number are used.

[0011] (First embodiment) In this embodiment, a stage 100 which is one embodiment of the present invention will be described.

[0012] 1.Overall structure 1(A) and 1(B) show a schematic perspective view and a top view of the stage 100, respectively. 2(A) and 2(B) show schematic cross-sectional views along the chain line AA' in FIG. 1(B). As shown in these figures, the stage 100 basically comprises a first support plate 102, a second support plate 104, a shaft 108, and at least one sheathed heater 110. The stage 100 may further include a third support plate 106. These figures show an example in which a single sheathed heater 110 is provided. For ease of viewing, the first support plate 102 is not shown in FIG. 1(A), and the sheathed heater 110 is not shown in FIG. 2(B).

[0013] 2. First support plate The first support plate 102 is configured to have a flat upper surface so that a semiconductor substrate including silicon or a compound semiconductor, or an insulating substrate including an insulator such as quartz or glass, can be placed thereon. The first support plate includes a metal, and the metal is selected from metals having a thermal conductivity of 10 W / mK or more and 430 W / mK or less. By using a metal with high thermal conductivity, the thermal energy generated by the sheath heater 110 can be efficiently received. In addition, the metal has a thermal conductivity of 3×10 -6 / K or more 25×10 -6 It is preferable that the metal has a thermal expansion coefficient of 100 / K or less. Specific examples of metals that satisfy such characteristics include titanium, aluminum, and stainless steel. Although not shown, the first support plate 102 may be provided with an electrostatic chuck for fixing the substrate, a through hole for supplying a gas with high thermal conductivity such as helium between the substrate and the stage 100, or a circulation path for circulating a liquid medium.

[0014] 3. Second support plate The second support plate 104 is provided under the first support plate 102. The second support plate 104 also contains a metal that can be used in the first support plate 102. The metal contained in the second support plate 104 and the metal contained in the first support plate 102 may be the same or different. In the case where they are different, the difference in the thermal expansion coefficient of the metals contained in the first support plate 102 and the second support plate 104 is 250×10 -6 / K or less. This makes it possible to suppress deformation due to thermal expansion, and to provide a highly reliable stage 100.

[0015] The second support plate 104 has an upper surface 104-3 joined to the first support plate 102. The first support plate 102 and the second support plate 104 can be joined by welding, screwing, or brazing. Examples of brazing materials used in brazing include an alloy containing silver, copper, and zinc, an alloy containing copper and zinc, copper containing a trace amount of phosphorus, aluminum and its alloys, an alloy containing titanium, copper, and nickel, an alloy containing titanium, zirconium, and copper, and an alloy containing titanium, zirconium, copper, and nickel.

[0016] 4.Third support plate The optional third support plate 106 is disposed below the second support plate 104. The third support plate 106 also comprises a metal that can be used in the first support plate 102 and the second support plate 104. The metal contained in the third support plate 106 may be the same as or different from the metal contained in the first support plate 102 and the second support plate 104. If different, the difference in thermal expansion coefficient between the third support plate 106 and the metal contained in the first support plate 102 and the second support plate 104 should be less than 10×10 -6 It is preferable to select a metal with a temperature of 0.1 V or less.

[0017] The third support plate 106 is also joined to the lower surface 104-4 of the second support plate 104. Similar to the joining of the first support plate 102 and the second support plate 104, the joining of the third support plate 106 and the second support plate 104 can be performed by welding, screwing, brazing, or the like.

[0018] 5. Shaft The shaft 108 is provided to support the first support plate 102, the second support plate 104, and the third support plate 106, and has a hollow structure to accommodate lead wires 112 for supplying power to a heater wire 118 of a sheath heater 110 described later. When an electrostatic chuck is provided, wiring for supplying power to the electrostatic chuck is also arranged inside the shaft 108. Although not shown, the shaft 108 may be connected to a rotation mechanism, which allows the stage 100 to rotate around the long axis of the shaft 108. The shaft 108 is joined to the third support plate 106 by welding, screwing, brazing, or the like. When the third support plate 106 is not used, the shaft 108 is joined to the second support plate 104.

[0019] 6.Sheath heater The sheathed heater 110 has a function of generating heat when electricity is applied, and is provided to heat the second support plate 104 and the first support plate 102. This heats the substrate placed on the stage 100. The structure of the sheathed heater 110 will be described in detail later. In this embodiment, the arrangement of the sheathed heater 110 on the stage 100 will be described in detail.

[0020] As shown in FIG. 2(A), the sheathed heater 110 penetrates the second support plate 104. The sheathed heater 110 is disposed so as to extend on two surfaces in parallel to these two surfaces. That is, the sheathed heater 110 is disposed so as to extend on a first surface 104-1 and a second surface 104-2 that are parallel to the upper surface of the first support plate 102 or the upper surface 104-3 of the second support plate 104 and have different distances from the first support plate 102. Compared to the second surface 104-2, the first surface 104-1 is closer to the first support plate 102. Hereinafter, the portion of the sheathed heater 110 that extends on the first surface 104-1 will be referred to as an upper stage portion 110-1, and the portion that extends on the second surface 104-2 will be referred to as a lower stage portion 110-2.

[0021] The upper stage portion 110-1 is exposed from an upper surface 104-3 of the second support plate 104, while the lower stage portion 110-2 is exposed from a lower surface 104-4 of the second support plate 104. For this reason, as shown in FIG. 1(B), when the first support plate 102 is removed from the stage 100 and observed from above, only the upper stage portion 110-1 of the sheath heater 110 is mainly observed, and the lower stage portion 110-2 (dotted line portion in FIG. 1(B)) is hardly observed. At least a part of the second support plate 104 is sandwiched between the upper stage portion 110-1 and the lower stage portion 110-2. As shown in FIG. 2(A), the upper stage portion 110-1 and the lower stage portion 110-2 may overlap each other via the second support plate 104.

[0022] A groove (first groove) 120 is provided in the upper surface 104-3 of the second support plate 104 (FIG. 2(B)), and the upper stage portion 110-1 is disposed in the first groove 120 (FIG. 2(A)). Therefore, the bottom surface of the first groove 120 exists in the first surface 104-1. In the example shown in FIG. 2(A) and FIG. 2(B), the first support plate 102 has a flat lower surface, and no groove is provided on the lower surface. Therefore, the depth of the first groove 120 is the same as or approximately the same as the outer diameter of the sheath heater 110. Specifically, the depth of the first groove 120 may be greater than 100% and less than 150%, greater than 100% and less than 120%, or greater than 100% and less than 110% of the outer diameter of the sheath heater 110. In order to reduce the in-plane temperature distribution of the first support plate 102, the first grooves 120 are formed in the upper surface 104-3 with a uniform density.

[0023] A groove (second groove) 122 is similarly formed in the lower surface 104-4 of the second support plate 104 (FIG. 2(B)), and the lower stage 110-2 is disposed within the second groove 122. Therefore, the bottom surface of the second groove 122 exists within the second surface 104-2. In the example shown in FIGS. 2(A) and 2(B), the third support plate 106 has a flat upper surface, and no groove is provided on the upper surface. Therefore, the depth of the second groove 122 is the same as or approximately the same as the outer diameter of the sheath heater 110 and the depth of the first groove 120.

[0024] At both ends of the first groove 120, through-holes are provided that penetrate the second support plate 104. The sheathed heater 110 is bent through these through-holes. Therefore, the upper stage portion 110-1 is the portion between the two bent portions of the sheathed heater 110. Hereinafter, both ends of the upper stage portion 110-1 are referred to as T1 and T2 (see Figs. 1(B) and 2(A)).

[0025] One end T1 is located within an area 109 (an area indicated by a chain-line circle in FIG. 1(B)) where the first support plate 102 and the second support plate 104 overlap with the shaft 108. The sheath heater 110 bent at the end T1 passes through a through hole 130 (FIG. 2(B)) formed in the third support plate 106, extends into the inside of the shaft 108, and is further connected to a heater power source (not shown) via a lead wire 112 and a terminal 114 (FIG. 2(A)).

[0026] 1(B) and 2(A), the other end T2 can be located outside the region 109. The sheathed heater 110 bent at the end T2 is bent again and extends on the second surface 104-2 until it reaches the region 109. The sheathed heater 110 is bent again in the region 109 on the second surface 104-2, passes through the through-hole 130 and extends inside the shaft 108, and is further connected to a heater power source (not shown) via the lead wire 112 and the terminal 114 (FIG. 2(A)).

[0027] By applying the above-mentioned configuration, not only can the degree of freedom in the layout of the sheath heater be greatly improved, but also it becomes possible to heat the substrate more uniformly. This will be explained in comparison with a conventional stage.

[0028] FIG. 3(A) shows a schematic top view of a stage having a conventional structure, and FIG. 3(B) shows a schematic cross-sectional view along the chain line BB' in FIG. 3(A). Unlike the stage 100, in the stage having the conventional structure shown in FIG. 3(A) and FIG. 3(B), no groove is provided on the lower surface 104-4 of the second support plate 104, and the sheathed heater 110 does not have a lower stage portion 110-2 extending on the second surface 104-2. Therefore, in order to supply power to the sheathed heater 110 via the shaft 108, both ends T3 and T4 of the sheathed heater 110 exposed from the upper surface 104-3 of the second support plate 104 must be disposed within the region 109. In such an arrangement, since the size of the shaft 108 is restricted, when a large number of sheathed heaters 110 are used, it is difficult to dispose both ends T3 and T4 of all the sheathed heaters 110 within the region 109. As a result, the number of sheathed heaters 110 that can be arranged is limited. For this reason, it is not possible to divide the upper surface of the stage into a plurality of segments and precisely control the temperature for each segment. Furthermore, since both ends T3 and T4 of all the plurality of sheathed heaters 110 are provided locally within the region 109, the temperature of the region 109 becomes higher than that of the regions outside the region, making it difficult to heat the substrate uniformly.

[0029] In contrast, even if multiple sheathed heaters 110 are arranged on the stage 100, power can be supplied to all of the sheathed heaters 110 by arranging only one end T1 of each upper portion 110-1 in the region 109. Alternatively, as described below, when using a one-terminal type sheathed heater 110 having a pair of terminals at only one end, it is not necessary to arrange both ends of the upper portion 110-1 of each sheathed heater 110 within the region 109. This makes it possible to arrange a large number of sheathed heaters 110 in various layouts and to prevent overheating in the center of the stage.

[0030] Second embodiment In this embodiment, a modified example of the stage 100 described in the first embodiment will be described with reference to Fig. 4(A) to Fig. 6(B). These figures are schematic cross-sectional views corresponding to Fig. 2(A). Descriptions of configurations that are the same as or similar to those in the first embodiment may be omitted.

[0031] 1. Variation 1 As shown in FIG. 4(A), in the first modification, no groove (first groove 120) is formed in the upper surface 104-3 of the second support plate 104, and a groove (third groove 124) is formed in the lower surface of the first support plate 102. In this modification, the upper stage portion 110-1 is housed in the third groove 124. Therefore, the first surface 104-1 exists in the upper surface 104-3 of the second support plate 104. The depth of the third groove 124 is the same as or approximately the same as the outer diameter of the sheath heater 110. Specifically, the depth of the third groove 124 may be greater than 100% and less than 150%, greater than 100% and less than 120%, or greater than 100% and less than 110% of the outer diameter of the sheath heater 110.

[0032] 2. Variation 2 Alternatively, as shown in FIG. 4(B), a first groove 120 may be formed in the upper surface 104-3 of the second support plate 104, and a third groove 124 may be formed in the lower surface of the first support plate 102. In this modification, the upper stage portion 110-1 is housed inside the first groove 120 and the third groove 124. Therefore, the sum of the depths of the first groove 120 and the third groove 124 is the same as or almost the same as the outer diameter of the sheath heater 110. Specifically, the sum of the depths of the first groove 120 and the third groove 124 may be greater than 100% and less than 150%, greater than 100% and less than 120%, or greater than 100% and less than 110% of the outer diameter of the sheath heater 110.

[0033] 3. Variation 3 Modification 3 shown in FIG. 5(A) differs from Modification 1 (FIG. 4(A)) in that no groove (second groove 122) is formed in the lower surface 104-4 of the second support plate 104, and a groove (fourth groove) 126 is formed in the upper surface of the third support plate 106. In this modification 3, the lower stage portion 110-2 is housed in the fourth groove 126. Therefore, the second surface 104-2 exists in the lower surface 104-4 of the second support plate 104. The depth of the fourth groove 126 is the same as or almost the same as the outer diameter of the sheath heater 110. Specifically, the depth of the fourth groove 126 may be greater than 100% and less than 150%, greater than 100% and less than 120%, or greater than 100% and less than 110% of the outer diameter of the sheath heater 110.

[0034] 4. Variation 4 Modification 4 shown in FIG. 5(B) differs from Modification 2 (FIG. 4(B)) in that a groove (fourth groove) 126 is also formed on the upper surface of the third support plate 106. In this modification 4, the lower stage portion 110-2 is housed inside the second groove 122 and the fourth groove 126. Therefore, the sum of the depth of the second groove 122 and the depth of the fourth groove 126 is the same as or almost the same as the outer diameter of the sheath heater 110. Specifically, the sum of the depth of the second groove 122 and the depth of the fourth groove 126 may be greater than 100% and less than 150%, greater than 100% and less than 120%, or greater than 100% and less than 110% of the outer diameter of the sheath heater 110.

[0035] 5. Variation 5 5(C) differs from Modification 1 (FIG. 4(A)) in that it does not have the third support plate 106. In this case as well, the lower portion 110-2 extends on the second surface 104-2 until it reaches the region 109.

[0036] 6. Variation 6 Alternatively, as shown in FIG. 6(A), the lead wire 112 (described later) may be included in the lower stage 110-2. In this case, the lead wire 112 extends along the second groove 122 on the second surface 104-2. Alternatively, as shown in FIG. 6(B), the lower stage 110-2 may not include the heater wire 118 (described later) and may be configured by only the lead wire 112, or by only the lead wire 112 and a connecting portion (not shown) for connecting the lead wire 112 and the heater wire 118. By using such a configuration, it is possible to selectively heat the upper portion without heating the lower portion of the second support plate 104. Also, since the lower stage 110-2 does not have the heater wire 118 in the region 109, local overheating of the center portion of the stage 100 can be more effectively prevented.

[0037] Third embodiment In this embodiment, stages 140, 142 on which multiple independently driven sheathed heaters 110 are arranged will be described. The aspect described below is one example of this embodiment, and there is no restriction on the number of sheathed heaters 110 provided on the stage 100. Descriptions of configurations that are the same as or similar to those of the first and second embodiments may be omitted.

[0038] 7(A) and 7(B) are schematic top and cross-sectional views of the stage 140, respectively. In FIG. 7(A), the first support plate 102 is not shown. As shown in these figures, four sheathed heaters (first sheathed heater 110a, second sheathed heater 110b, third sheathed heater 110c, and fourth sheathed heater 110d) are arranged on the stage 140 so as to draw substantially concentric circles. These sheathed heaters 110 form arcs on the first surface 104-1, and the radii of the first sheathed heater 110a and the subsequent sheathed heaters 110 are larger in this order. In the example shown here, the first sheathed heater 110a is entirely located within the region 109, but the upper stage portions 110-1 of the other sheathed heaters 110 are located outside the region 109. However, a part of the upper stage portions 110-1 of the other sheathed heaters 110 may be present within the region 109.

[0039] Here, at least one of the multiple sheathed heaters 110 has two lower stage portions 110-2 and one upper stage portion 110-1 located between them. Specifically, as shown in Figures 7(A) and 7(B), the fourth sheathed heater 110d has an upper stage portion 110-1 extending on the first surface 104-1, and two lower stage portions 110-2 extending on the second surface 104-2 and separated from each other. The two lower stage portions 110-2 extend on the second surface 104-2 up to the region 109. The same is true for the second sheathed heater 110b and the third sheathed heater 110c.

[0040] As can be seen from these figures, the lower stage 110-2 of one sheathed heater 110 selected from the multiple sheathed heaters 110 may overlap or intersect with the upper stage 110-1 of the other sheathed heaters 110. For example, in the example shown in Fig. 7(B), the lower stage 110-2 of the fourth sheathed heater 110d overlaps and intersects with the upper stage 110-1 of the second sheathed heater 110b and the third sheathed heater 110c. Similarly, the lower stage 110-2 of the third sheathed heater 110c overlaps and intersects with the upper stage 110-1 of the second sheathed heater 110b.

[0041] The upper stage parts 110-1 of the multiple sheathed heaters 110 may be arranged in different layers. Specifically, as shown in FIG. 8(A), which is a schematic cross-sectional view taken along the dashed line DD' in FIG. 7(A), all the upper stage parts 110-1 of the multiple sheathed heaters 110 may be arranged in grooves (here, the first groove 120 formed in the second support plate 104) existing in the same layer, or as shown in FIG. 8(B) and FIG. 8(C), they may be arranged in different grooves. In the example of FIG. 8(B), the upper stage part 110-1 of the first sheathed heater 110a is arranged in the first groove 120, while the upper stage parts of the other sheathed heaters 110 are provided in the third groove 124 formed in the first support plate 102. On the other hand, in the example shown in FIG. 8(C), the upper stage part of the second sheathed heater 110b is provided across the first groove 120 and the third groove 124.

[0042] Similarly, the lower stage portions 110-2 of the multiple sheathed heaters 110 may also be arranged in different layers (grooves). For example, as shown in the schematic cross-sectional view of Fig. 9, the lower stage portions 110-2 of some of the sheathed heaters 110 (here, the fourth sheathed heater 110d) may be arranged in the second groove 122 provided in the lower surface 104-4 of the second support plate 104, and the lower stage portions 110-2 of the other sheathed heaters 110 (here, the third sheathed heater 110c) may be arranged in the fourth groove 126 formed in the upper surface of the third support plate 106.

[0043] In the stage 140 illustrated in FIG. 7(A), among the multiple sheathed heaters 110, only the first sheathed heater 110a has both ends of the upper stage portion 110-1 present within the region 109, and both ends of the upper stage portions 110-1 of the second sheathed heater 110b to the fourth sheathed heater 110d are located outside the region 109. This makes it possible to prevent both ends of the upper stage portions 110-1 of the multiple sheathed heaters 110 from concentrating at the center of the second support plate 104. In other words, it is not necessary to fold back all the sheathed heaters 110 so that both ends of the sheathed heaters 110 are located in the region 109 on the second support plate 104. This not only prevents local overheating at the center of the stage 140, but also greatly reduces restrictions on the layout of the sheathed heaters 110. As a result, it is possible to construct a layout for heating the substrate more efficiently and uniformly. For example, the multiple sheath heaters 110 can be arranged so that the upper stage 110-1 on the second support plate 104 has higher symmetry.

[0044] For example, as shown in Fig. 10(A) on the stage 142, a plurality of sheathed heaters 110 each having a semicircular upper stage portion 110-1 can be arranged with good symmetry. More specifically, the stage 142 has a first sheathed heater 110a to a seventh sheathed heater 110g. The first sheathed heater 110a has an upper stage portion 110-1 in an arc shape that is nearly a circle. On the other hand, the second sheathed heater 110b to the seventh sheathed heater 110g have an upper stage portion 110-1 in a shape in which two arcs of different radii are connected at their ends.

[0045] The second sheathed heater 110b and the upper stage 110-1 of the third sheathed heater 110c have the same shape and can be arranged to surround the first sheathed heater 110a and to overlap one of the second sheathed heater 110b and the third sheathed heater 110c when rotated 180° about an axis passing through the center of the second support plate 104. In other words, when the second sheathed heater 110b and the upper stage 110-1 of the third sheathed heater 110c are recognized as a single integrated structure, this structure has a C2 rotation axis.

[0046] Similarly, the upper stage 110-1 of the fourth sheathed heater 110d and the fifth sheathed heater 110e have the same shape, and are arranged so as to surround the first sheathed heater 110a, the second sheathed heater 110b, and the third sheathed heater 110c, and to overlap one of the fourth sheathed heater 110d and the fifth sheathed heater 110e when rotated 180° about an axis passing through the center of the second support plate 104. That is, when the upper stage 110-1 of the fourth sheathed heater 110d and the fifth sheathed heater 110e are recognized as one integrated structure, this structure has a C2 rotation axis. The same is true for the upper stage 110-1 of the sixth sheathed heater 110f and the seventh sheathed heater 110g.

[0047] Alternatively, nine sheathed heaters (first sheathed heater 110a to ninth sheathed heater 110i) can be arranged symmetrically, as in stage 144 shown in Fig. 10(B). In the example shown here, along with the first sheathed heater 110a having an upper stage 110-1 in the shape of an arc that is nearly circular, the second sheathed heater 110b to the ninth sheathed heater 110i are arranged, each having an upper stage 110-1 in the shape of two arcs with different radii connected at their ends.

[0048] The upper stage portions 110-1 of the second sheathed heater 110b to the fifth sheathed heater 110e have the same shape and can be arranged to surround the first sheathed heater 110a and to overlap one of the second sheathed heaters 110b to 110e when rotated 90° about an axis passing through the center of the second support plate 104. In other words, when the upper stage portions 110-1 of the second sheathed heater 110b to the fifth sheathed heater 110e are recognized as a single integrated structure, this structure has a C4 rotation axis.

[0049] Similarly, the upper stage portions 110-1 of the sixth sheathed heater 110f to the ninth sheathed heater 110i have the same shape and are arranged so as to surround the first sheathed heater 110a to the fifth sheathed heater 110e and to overlap one of the sixth sheathed heaters 110f to the ninth sheathed heater 110i when rotated 90° about an axis passing through the center of the second support plate 104. In other words, when the upper stage portions 110-1 of the sixth sheathed heater 110f to the ninth sheathed heater 110i are recognized as a single integrated structure, this structure has a C4 rotation axis.

[0050] Furthermore, on the stage 144, a pair of sheathed heaters having upper stage portions 110-1 with different shapes are arranged in one quadrant. For example, the second sheathed heater 110b and the sixth sheathed heater 110f are arranged in one quadrant. Also, when the upper stage portions 110-1 of the second sheathed heater 110b to the ninth sheathed heater 110i are recognized as one integrated structure, this structure has a C4 rotation axis.

[0051] Even when the above-described layout is adopted, among the multiple sheathed heaters 110, only the first sheathed heater 110a has both ends of the upper stage 110-1 present within the region 109, and both ends of the upper stage 110-1 of the other sheathed heaters 110 are located outside the region 109. This prevents local overheating in the center of the stage 140. In addition, since the upper stage 110-1 of the multiple sheathed heaters 110 can be arranged on the second support plate 104 with high symmetry, it is possible to control the temperature of the substrate more uniformly and precisely.

[0052] (Fourth embodiment) In this embodiment, the structure of a sheath heater 110 will be described.

[0053] 1. Double-ended sheath heater There are no restrictions on the sheath heater 110 that can be used with the stage 100 according to this embodiment, and sheath heaters 110 having various structures can be used. As an example, schematic cross-sectional views of a two-terminal type sheath heater 110 are shown in Figures 11(A) to 13(C). Figure 11(A) is a schematic cross-sectional view including the long axis of the sheath heater 110, and Figures 11(B) and 11(C) are schematic cross-sectional views including a dashed line EE' perpendicular to the long axis.

[0054] 11(A) includes a heater wire 118 extending in the longitudinal direction, an insulator 116 surrounding the heater wire 118, a metal sheath 115 surrounding the insulator 116, a pair of lead wires 112 electrically connected to the heater wire 118, and a pair of terminals 114 electrically connected to the lead wire 112. The metal sheath 115 and the heater wire 118 are electrically insulated by the insulator 116. As shown in FIG. 11(A), a portion of the lead wire 112 may be surrounded by the insulator 116, and although not shown, a portion of the heater wire 118 may be exposed from the insulator 116.

[0055] The heater wire 118 may be made of a conductor that generates Joule heat when electricity is applied. Specifically, a metal selected from tungsten, tantalum, molybdenum, platinum, nickel, chromium, and cobalt, or an alloy containing these metals may be used. Examples of the alloy include an alloy of nickel and chromium, and an alloy containing nickel, chromium, and cobalt.

[0056] The insulator 116 is provided to prevent the heater wire 118 from coming into contact with the metal sheath 115 and causing a short circuit. The material used for the insulator 116 can be selected from insulating materials with thermal conductivity of 10 W / mK to 300 W / mK. By using such a material, the thermal energy generated by the heater wire 118 can be efficiently transferred to the metal sheath 115. Examples of the insulator 116 include magnesium oxide, aluminum oxide, boron nitride, and aluminum nitride.

[0057] The metal sheath 115 contains a metal, and the metal can be selected from metals having a thermal conductivity of 10 W / mK or more and 430 W / mK or less. By selecting such a metal, the thermal energy generated by the heater wire 118 can be efficiently transferred to the first support plate 102 and the second support plate 104. The metal has a thermal conductivity of 3×10 -6 / K or more 25×10 -6 / K or less. The metals used for the metal sheath 115, the first support plate 102, and the second support plate 104 may be the same or different. If they are different, the difference in the thermal expansion coefficients of the metals contained therein should be 250×10 -6 It is preferable to configure the metal sheath 115, the first support plate 102, and the second support plate 104 so that the thermal expansion coefficient is 1 / K or less. This makes it possible to suppress deformation due to thermal expansion and provide a highly reliable stage. Specifically, metals and alloys such as aluminum, titanium, and stainless steel can be used for the metal sheath 115.

[0058] There are no restrictions on the shape of the cross section perpendicular to the long axis of the sheathed heater 110, and it may be circular or rectangular as shown in Figures 11(B) and 11(C), or it may be elliptical (not shown). When the cross section is circular, the force required for deformation does not depend on the bending direction, so the sheathed heater 110 can be easily bent in any direction. This makes it possible to easily place the sheathed heater 110 in grooves formed in the first support plate 102, the second support plate 104, etc.

[0059] There is no restriction on the shape of the cross section of the heater wire 118 perpendicular to the long axis of the sheath heater 110, and it may be a circle (FIG. 11(B)) or a polygon (FIG. 11(B)). When the cross section is a rectangle, a belt-shaped heater wire 118 is obtained. As shown in FIG. 12(A), the heater wire 118 may be twisted in the metal sheath 115 to form a helical structure. In this case, as shown in the cross-sectional schematic diagrams (FIGS. 12(B) to 12(D)) including the chain lines FF', GG', and HH' perpendicular to the long axis, the arrangement of the heater wire 118 changes continuously in a plane perpendicular to the long axis. When the belt-shaped heater wire 118 has a helical structure, the helical pitch L1 is adjusted to be 1.0 mm or more and 3.0 mm or less, 1.0 mm or more and 2.5 mm or less, or 1.0 mm or more and 2.0 mm or less. By applying such a spiral structure, the length of the heater wire 118 per unit length of the metal sheath 115 is increased, and the resistance value of the sheathed heater 110 can be increased. Furthermore, since spring properties can be imparted to the heater wire 118, deformation of the heater wire 118 and breakage during thermal expansion are suppressed. Therefore, even if there is a large difference in the thermal expansion coefficient between the metal sheath 115 and the heater wire 118, it is possible to provide a sheathed heater 110 with improved reliability.

[0060] The sheathed heater 110 may have a plurality of heater wires 118 in the metal sheath 115. For example, as shown in Figs. 13(A) and 13(B), the sheathed heater 110 may be configured to include a lead wire 112 having a branched structure, with two heater wires 118a, 118b connected to one lead wire 112 and extending to the other lead wire 112. Even in this case, the cross-sectional shape of each of the heater wires 118a, 118b may be set arbitrarily and may be selected from a circle, a rectangle, an ellipse, and the like. When the cross-sectional shape is a rectangle, each of the heater wires 118 may form a spiral structure as shown in Fig. 11(B). Although not shown, the sheathed heater 110 may have a plurality of heater wires 118 with different cross-sectional shapes. 13(C), the lead wire 112 may not have a branched structure, and the heater wire 118 may branch within the metal sheath 115 (see the structure within the dotted circle) to form multiple heater wires 118. By providing multiple heater wires 118, the density of the heater wires 118 within the sheath heater 110 can be increased, and the second support plate 104 and the first support plate 102 can be heated more efficiently.

[0061] 2. Single terminal type sheath heater As shown in Fig. 4(A), a single-terminal sheathed heater 110 can also be applied. The single-terminal sheathed heater 110 differs from the double-terminal sheathed heater 110 in that the metal sheath 115 has a cylindrical shape with one end closed, the heater wire 118 is folded within the metal sheath 115, and both ends are taken out from one end of the metal sheath 115. Therefore, in the single-terminal sheathed heater 110, one heater wire 118 is arranged so as to have two axes (two cores) within the metal sheath 115. To prevent a short circuit of the heater wire 118 within the metal sheath 115, the folded-back portion from one end and the folded-back portion from the other end, i.e., the two opposing portions of the heater wire 118, are insulated from each other by an insulator 116.

[0062] Even in the case of the one-terminal type sheath heater 110, a strip-shaped heater wire 118 can be used, and the portion folded back from one end and the portion folded back from the other end may each have a spiral structure independently (FIG. 14(B)). As shown in the schematic cross-sectional view including the chain line II' (FIG. 14(C)), the normal to the heater wire 118 is substantially perpendicular to the direction in which the metal sheath 115 extends. Furthermore, in the two opposing portions of the heater wire 118, the surfaces of the heater wire 118 are substantially parallel. In addition, by making the winding direction of the spiral structure the same and making the pitch L1 substantially the same, the distance g2 between the two opposing portions of the heater wire 118 can be maintained constant, and as a result, a short circuit of the heater wire 118 can be prevented. However, the winding direction and pitch L1 of the spiral of the two opposing portions of the heater wire 118 may be different from each other.

[0063] 14(C), the width d1 of the heater wire 118 can be selected from the range of 0.1 mm to 9.0 mm, and the thickness d2 can be selected from the range of 0.1 mm to 3.0 mm. The inner diameter d3 of the metal sheath 115 can be selected from the range of 3.0 mm to 9.0 mm, the thickness d4 can be selected from the range of 0.5 mm to 2.0 mm, and the outer diameter d5 can be selected from the range of 3.0 mm to 11.0 mm. The shortest distance g1 between the heater wire 118 and the metal sheath 115 can be selected from the range of 0.3 mm to 1.0 mm, or 0.4 mm to 1.0 mm. The distance g2 between one end of the heater wire 118 and the folded back part and the other end of the heater wire 118 and the folded back part is selected from the range of 0.3 mm to 2.0 mm, or 0.4 mm to 1.0 mm. This allows the sheathed heater 110 to be formed thin, and as a result, the sheathed heater 110 can be arranged in a fine layout, further reducing the temperature distribution in the substrate. Also, insulation between the metal sheath 115 and the heater wire 118 is ensured, and short-circuiting of the heater wire 118 can be prevented.

[0064] 15(A), the heater wire 118 may be configured so that two opposing portions of the heater wire 118 have a double helix structure. In this case, the heater wire 118 can be configured so that the pitch L2 of the helical structure of the heater wire 118 is 1.0 mm or more and 6.0 mm or less, 1.0 mm or more and 2.5 mm or less, or 1.0 mm or more and 2.0 mm or less.

[0065] Like the double-terminal type, the single-terminal type sheathed heater 110 may also include multiple heater wires 118 within the metal sheath 115. For example, as shown in Fig. 15(B), the sheathed heater 110 may be configured so that the heater wire 118 has two branch structures (see the structures indicated by dotted circles) connected to the lead wire 112 within the metal sheath 115, and has two heater wires 118a, 118b extending from one branch structure to the other branch structure.

[0066] By using the one-terminal type sheath heater 110, the degree of freedom in the layout of the sheath heater 110 can be further improved. For example, the stage 146 shown in the schematic top view of FIG. 16(A) and the schematic cross-sectional view (FIG. 16(B)) along the chain line JJ' of FIG. 16(A) is different from the stage 140 (see FIG. 7(A) and FIG. 7(B)) in that the one-terminal type sheath heater 110 is used instead of the two-terminal type sheath heater 110. In the one-terminal type sheath heater 110, one end (closed end) of the metal sheath 115 is closed, and the pair of lead wires 112 are both connected to the other end (open end) of the metal sheath 115. For this reason, only one through hole is formed in the first groove 120 in which the upper stage portion 110-1 is disposed, and the sheath heater 110 is bent so as to pass through this through hole. The part beyond this bent portion is the lower stage 110-2, which extends on the second surface 104-2 to the region 109. Therefore, each sheathed heater 110 has a single lower stage 110-2, and the number of lower stages 110-2 extending to the region 109 is the same as or smaller than the number of sheathed heaters 110. This also reduces the number of second grooves 122 extending to the region 109, making it possible to arrange more sheathed heaters 110 with a high degree of freedom.

[0067] Fifth embodiment In this embodiment, a film forming apparatus and a film processing apparatus equipped with the above-mentioned stage 100, 140, 142, 144, or 146 will be described. In this embodiment, a film forming apparatus and a film processing apparatus equipped with 100 as a stage will be described as an example. Descriptions of configurations that are the same as or similar to those of the first to fourth embodiments may be omitted.

[0068] 1. Etching equipment 17 shows a schematic cross-sectional view of an etching apparatus 200 for performing dry etching on various films as a film processing apparatus. The etching apparatus 200 has a chamber 202. The chamber 202 provides a space for etching a film such as a conductor, an insulator, or a semiconductor formed on a substrate.

[0069] An exhaust device 204 is connected to the chamber 202, which allows the interior of the chamber 202 to be set to a reduced pressure atmosphere. The chamber 202 is further provided with an inlet pipe 206 for introducing a reactive gas, and a reactive gas for etching is introduced into the chamber via a valve 208. Examples of the reactive gas include carbon tetrafluoride (CF4), octafluorocyclobutane (c-C4F8), decafluorocyclopentane (c-C5F 10 ), hexafluorobutadiene (C4F6), and other fluorine-containing organic compounds.

[0070] A microwave source 212 can be provided at the top of the chamber 202 via a waveguide 210. The microwave source 212 has an antenna for supplying microwaves, and outputs high-frequency microwaves such as 2.45 GHz microwaves or 13.56 MHz radio waves (RF). The microwaves generated by the microwave source 212 are propagated to the top of the chamber 202 via the waveguide 210 and introduced into the chamber 202 via a window 214 made of quartz, ceramic, or the like. The reactive gas is converted into plasma by the microwaves, and the etching of the film proceeds due to the electrons, ions, and radicals contained in the plasma.

[0071] A stage 100 according to an embodiment of the present invention is provided at the bottom of the chamber 202 to place a substrate. The substrate is placed on the stage 100. A power source 224 is connected to the stage 100, high-frequency power is applied to the stage 100, and an electric field due to microwaves is formed in a direction perpendicular to the surface of the stage 100 and the surface of the substrate. Magnets 216, 218, and 220 can be further provided on the top and sides of the chamber 202. The magnets 216, 218, and 220 may be permanent magnets or electromagnets having electromagnetic coils. The magnets 216, 218, and 220 create a magnetic field component parallel to the stage 100 and the surface of the substrate, and in cooperation with the electric field due to the microwaves, electrons in the plasma are subjected to the Lorentz force and resonate, and are bound to the stage 100 and the surface of the substrate. As a result, a high-density plasma can be generated on the surface of the substrate.

[0072] The stage 100 is further connected to a heater power supply 230 that controls the sheath heater 110 provided on the stage 100. The stage 100 may further be connected, as optional components, to a power supply 226 for an electrostatic chuck that fixes the substrate to the stage 100, a temperature controller 228 that controls the temperature of the medium circulated inside the stage 100, and a rotation control device (not shown) that rotates the stage 100.

[0073] As described above, the etching apparatus 200 uses the stage 100 according to the embodiment of the present invention. By using this stage 100, the substrate can be uniformly heated and the heating temperature can be precisely controlled. Therefore, the etching apparatus 200 can precisely pattern various films provided on the substrate.

[0074] 2.CVD equipment 18 is a schematic diagram of a film formation apparatus, namely, a CVD apparatus 300. The CVD apparatus 300 has a chamber 302, and provides a place for chemically reacting a reaction gas.

[0075] An exhaust device 304 is connected to the chamber 302, and the pressure inside the chamber 302 can be reduced. An inlet pipe 306 for introducing a reactive gas is further provided in the chamber 302, and a reactive gas for film formation is introduced into the chamber 302 via a valve 308. As the reactive gas, various gases can be used depending on the film to be formed. The gas may be liquid at room temperature. For example, by using silane, dichlorosilane, tetraethoxysilane, or the like, a thin film of silicon, silicon oxide, silicon nitride, or the like can be formed. Alternatively, by using tungsten fluoride, trimethylaluminum, or the like, a thin metal film of tungsten, aluminum, or the like can be formed.

[0076] As in the etching apparatus 200, a microwave source 312 may be provided at the top of the chamber 302 via a waveguide 310. Microwaves generated by the microwave source 312 are introduced into the chamber 302 through the waveguide 310. The microwaves convert the reactive gas into plasma, and various active species contained in the plasma promote a chemical reaction of the gas, and the product obtained by the chemical reaction is deposited on the substrate to form a thin film. As an optional configuration, a magnet 344 for increasing the density of the plasma may be provided in the chamber 302. The stage 100 described in the first embodiment is provided at the bottom of the chamber 302, and a thin film can be deposited with the substrate placed on the stage 100. As in the etching apparatus 200, magnets 316 and 318 may be further provided on the side of the chamber 302.

[0077] The stage 100 is further connected to a heater power supply 330 that controls the sheath heater 110 provided on the stage 100. The stage 100 may further be connected to any of a power supply 324 for supplying high frequency power to the stage 100, a power supply 326 for the electrostatic chuck, a temperature controller 328 that controls the temperature of the medium circulated inside the stage 100, a rotation control device (not shown) for rotating the stage 100, and the like, as optional configurations.

[0078] 3. Sputtering Equipment 19 is a schematic diagram of a sputtering apparatus 400, which is one of the film forming apparatuses. The sputtering apparatus 400 has a chamber 402, and provides a field for collision of high-speed ions with a target and deposition of the target atoms generated at that time.

[0079] An exhaust device 404 for reducing the pressure inside the chamber 402 is connected to the chamber 402. An introduction pipe 406 for introducing a sputtering gas such as argon into the chamber 402, and a valve 408 are provided to the chamber 402.

[0080] A target stage 410 that holds a target containing a material to be deposited and functions as a cathode is provided at the bottom of the chamber 402, and a target 412 is placed on the target stage 410. A high-frequency power supply 414 is connected to the target stage 410, and plasma can be generated in the chamber 402 by the high-frequency power supply 414.

[0081] The stage 100 described in the first embodiment can be provided above the chamber 402. In this case, the formation of a thin film proceeds with a substrate placed under the stage 100. As with the etching apparatus 200 and the CVD apparatus 300, a heater power supply 430 is connected to the stage 100. The stage 100 may further be connected to a power supply 424 for supplying high frequency power to the stage 100, a power supply 426 for the electrostatic chuck, a temperature controller 428, and a rotation control device (not shown) for rotating the stage 100.

[0082] Argon ions accelerated by the plasma generated in the chamber 402 collide with the target 412, ejecting atoms from the target 412. The ejected atoms fly to and deposit on a substrate placed below the stage 100 while the shutter 416 is open.

[0083] In this embodiment, a configuration is exemplified in which the stage 100 is installed at the top of the chamber 402 and the target stage 410 is installed at the bottom of the chamber 402, but this embodiment is not limited to this configuration, and the sputtering apparatus 400 may be configured so that the target 412 is located above the stage 100. Alternatively, the stage 100 may be installed so that the main surface of the substrate is disposed perpendicular to a horizontal plane, and the target stage 410 may be provided opposite to the stage 100.

[0084] 4. Vapor deposition equipment 20 is a schematic diagram of a deposition apparatus, which is one of the film formation apparatuses, a deposition apparatus 500. The deposition apparatus 500 has a chamber 502, which provides a space for evaporation of a material in a deposition source 510 and deposition of the evaporated material on a substrate.

[0085] An exhaust device 504 for creating a high vacuum inside the chamber 502 is connected to the chamber 502. An introduction pipe 506 for returning the chamber 502 to atmospheric pressure is provided to the chamber 502, and an inert gas such as nitrogen or argon is introduced into the chamber 502 via a valve 508.

[0086] A stage 100 may be provided on the upper portion of the chamber 502. The deposition of material proceeds with the substrate placed under the stage 100. As in the etching apparatus 200, the CVD apparatus 300, and the sputtering apparatus 400, a heater power supply 528 is further connected to the stage 100. The stage 100 may further be connected to a power supply 524 for an electrostatic chuck, a temperature controller 526, and a rotation control device 530 for rotating the stage 100 as optional configurations. The stage 100 may further include a mask holder 516 for fixing a metal mask between the substrate and the deposition source 510. This allows the metal mask to be placed near the substrate so that the opening of the metal mask overlaps with the region where the material is to be deposited.

[0087] An evaporation source 510 is provided at the bottom of the chamber, and the material to be evaporated is filled in the evaporation source 510. A heater for heating the material is provided in the evaporation source 510, and the heater is controlled by a control device 512. The inside of the chamber 502 is made into a high vacuum using an exhaust device 504, and the evaporation source 510 is heated to vaporize the material, thereby starting evaporation. When the evaporation rate becomes constant, a shutter 514 is opened, thereby starting the deposition of the material on the substrate.

[0088] As described above, the stage according to the embodiment of the present invention is used in the film forming apparatus such as the CVD apparatus 300, the sputtering apparatus 400, and the deposition apparatus 500 of the present embodiment. By using this stage, the substrate can be uniformly heated and the heating temperature can be precisely controlled. Therefore, by using these film forming apparatuses, it becomes possible to uniformly form various films with controlled characteristics on the substrate.

[0089] Sixth embodiment In this embodiment, a stage 148 having a structure different from the stages 100, 140, 142 described in the first, second, and third embodiments will be described. Descriptions of configurations that are the same as or similar to those described in the first to fourth embodiments may be omitted. In this embodiment, a stage 148 using multiple one-terminal sheathed heaters will be described as an example, but a single sheathed heater may be used, or a single or multiple two-terminal sheathed heaters may be applied.

[0090] FIG. 21(A) shows a schematic top view of the stage 148, and FIG. 21(B) shows a schematic cross-sectional view along the chain line KK' in FIG. 21(A). As in the other stages 100, 140, and 142, the sheathed heater 110 penetrates the second support plate 104, and at least one sheathed heater 110 is disposed to form an upper stage portion 110-1 and a lower stage portion 110-2. However, in the stage 148, at least one sheathed heater 110 extends obliquely with respect to the first surface 104-1 and the second surface 104-2 between the upper stage portion 110-1 and the lower stage portion 110-2. For example, as shown in FIG. 21(B), the portion of the third sheathed heater 110c between the upper stage portion 110-1 and the lower stage portion 110-2 is disposed obliquely with respect to the first surface 104-1 and the second surface 104-2 (see the area surrounded by the chain line ellipse). Therefore, the portion between the end of the first groove 120 and the end of the second groove 122 is also disposed obliquely with respect to the first surface 104-1 and the second surface 104-2. The portion where the sheathed heater 110 is disposed obliquely is preferably disposed so that the direction from the upper stage portion 110-1 to the lower stage portion 110-2 is from the outer periphery toward the center of the stage 148. In other sheathed heaters 110 as well, the portion between the upper stage portion 110-1 and the lower stage portion 110-2 may be disposed obliquely.

[0091] By adopting such an arrangement, the angle at which the sheath heater 110 is bent can be made smaller, which not only reduces the distortion of the bent portion but also improves the degree of freedom in the arrangement of the sheath heater 110. In addition, a sheath heater 110 with a large outer diameter can be adopted, and further, the thickness of the second support plate 104 can be reduced.

[0092] The above-described embodiments of the present invention may be combined as appropriate as long as they are not mutually inconsistent. Furthermore, those in which a person skilled in the art appropriately adds or deletes components or modifies the design based on each embodiment are also included in the scope of the present invention as long as they include the gist of the present invention.

[0093] Furthermore, even if there are other effects and advantages different from those brought about by the respective embodiments described above, those which are clear from the description in this specification or which can be easily predicted by a person skilled in the art are naturally understood to be brought about by the present invention. [Explanation of symbols]

[0094] 100: stage, 102: first support plate, 104: second support plate, 104-1: first surface, 104-2: second surface, 104-3: upper surface, 104-4: lower surface, 106: third support plate, 108: shaft, 109: area, 110: sheath heater, 110-1: upper stage portion, 110-2: lower stage portion, 110a: first sheath heater, 110b: second sheath heater, 110c: third sheath heater, 110d: fourth sheath heater, 110e: fifth sheath heater, 110f: sixth sheath heater. sheath heater, 110g: seventh sheath heater, 110i: ninth sheath heater, 112: lead wire, 114: terminal, 115: metal sheath, 116: insulator, 118: heater wire, 120: first groove, 122: second groove, 124: third groove, 126: fourth groove, 130: through hole, 140: stage, 142: stage, 144: stage, 146: stage, 148: stage, 200: etching device, 202: chamber, 204: exhaust device, 206: introduction tube, 208: valve, 210: waveguide , 212: microwave source, 214: window, 216: magnet, 218: magnet, 220: magnet, 224: power supply, 226: power supply, 228: temperature controller, 230: heater power supply, 300: device, 302: chamber, 304: exhaust device, 306: introduction tube, 308: valve, 310: waveguide, 312: microwave source, 316: magnet, 318: magnet, 324: power supply, 326: power supply, 328: temperature controller, 330: heater power supply, 344: magnet, 400: sputtering device, 402: chamber, 404: exhaust Apparatus, 406: introduction pipe, 408: valve, 410: target stage, 412: target, 414: high frequency power supply, 416: shutter, 424: power supply, 426: power supply, 428: temperature controller, 430: heater power supply, 500: deposition apparatus, 502: chamber, 504: exhaust device, 506: introduction pipe, 508: valve, 510: deposition source, 512: control device, 514: shutter, 516: mask holder, 524: power supply, 526: temperature controller, 528: heater power supply, 530: rotation control device

Claims

1. A first support plate; a second support plate located below the first support plate and having a through hole; a shaft located below the second support plate and overlapping with the first support plate and the second support plate in the up-down direction; and at least one sheath heater extending through the second support plate; the at least one sheath heater has an upper stage portion extending through an uppermost surface of the second support plate, a lower stage portion extending through a lowermost surface of the second support plate, and an intermediate portion located between the upper stage portion and the lower stage portion and positioned in the through hole; The stage, wherein the intermediate portion does not overlap with the shaft in the up-down direction.

2. A stage as described in claim 1, wherein the upper and lower portions contact the top surface and the bottom surface, respectively.

3. A stage as described in claim 1, wherein the intermediate portion extends perpendicular to the top surface and the bottom surface.

4. A stage as described in claim 1, wherein the intermediate portion extends obliquely relative to the top surface and the bottom surface.

5. The first support plate has a first groove that accommodates the upper stage portion, The stage of claim 1 , wherein the depth of the first groove is greater than 100% and less than or equal to 150% of an outer diameter of the at least one sheathed heater.

6. A stage as described in claim 1, further comprising a third support plate between the second support plate and the shaft.

7. The third support plate has a second groove that accommodates the lower portion, The stage of claim 6 , wherein a depth of the second groove is greater than 100% and less than or equal to 150% of an outer diameter of the at least one sheathed heater.

8. The stage of claim 1, wherein the first support plate and the second support plate comprise a metal selected from titanium, aluminum, and stainless steel.

9. The at least one sheathed heater includes a first sheathed heater and a second sheathed heater, The stage according to claim 1 , wherein the lower portion of the first sheathed heater intersects with the upper portion of the second sheathed heater via the second support plate.

10. A film forming apparatus having a stage as described in claim 1.

11. A film processing apparatus having a stage as described in claim 1.

Images