Method for manufacturing individual device structures

Abstract

To provide a peeling method with a high survival rate of device structure parts in the peeling of wafers that are firmly bonded by hardened bonding materials.SOLUTION: In a method for peeling a support from a bonded wafer having a device structure portion having two or more electrodes of different polarity on one side of an epitaxial functional layer 19 and wherein the device structure portion is bonded to a support comprising a different substrate with a hardened bonding material 22, by irradiating the bonded wafer with a laser beam, the device structure portion support 21 is separated by causing at least a portion of the surface of the device structure portion in contact with the hardened bonding material and / or the hardened bonding material 22 to absorb the laser light and decompose the hardened bonding material 22 and / or the surface of the device structure portion.SELECTED DRAWING: Figure 8

Description

[Technical field]

[0001] The present invention relates to a method for delaminating a bonded wafer, and more particularly to a method for delaminating a bonded wafer in which an epitaxial wafer is bonded to a heterosubstrate. [Background technology]

[0002] The technology for separating only an epitaxial functional layer from a starting substrate and transferring it to another substrate is an important technology for mitigating constraints imposed by the physical properties of the starting substrate and increasing the design freedom of device systems.

[0003] To achieve this transfer, a technology is required to remove the starting substrate after bonding the epitaxial functional layer to the permanent substrate and then to achieve the transfer.

[0004] Patent Document 1 discloses a technique for thermocompression bonding a semiconductor epitaxial substrate and a temporary support substrate via a dielectric layer, and a technique for separating the temporary support substrate and the epitaxial functional layer by wet etching.

[0005] Although not directly related to improving the bonding property, Patent Document 2 discloses a technique in which a transparent conductive layer is inserted between an adhesive layer and a functional layer as one form of bonding.

[0006] However, although Patent Document 1 discloses a technique for thermocompression bonding a semiconductor epitaxial substrate and the temporary support substrate via a dielectric layer, and a technique for separating the temporary support substrate and the epitaxial functional layer by wet etching, there is a restriction that the thermal conditions must be below a certain level in order to maintain the temporary support, which restricts the fabrication of devices on the epitaxial functional layer after removing the starting substrate.

[0007] In addition, when performing device processing after removing the starting substrate, a thermal process is necessary to obtain ohmic contact. However, if a thermal history that creates ohmic contact is applied to a state where the substrate is bonded with an organic bonding material, the temporary support becomes a permanent bond (a stronger bond than the temporary support), making separation difficult. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Patent Publication No. 2021-27301 [Patent Document 2] JP 2004-158823 A Summary of the Invention [Problem to be solved by the invention]

[0009] The present invention has been made in consideration of the above-mentioned problems, and aims to provide a separation method that achieves a high survival rate of a device structure when separating a wafer that is firmly bonded with a hardening bonding material, the wafer having a device structure with two or more electrodes of different polarities on one side of an epitaxial functional layer, the device structure being bonded to a support made of a dissimilar substrate with a hardening bonding material. [Means for solving the problem]

[0010] The present invention has been made to achieve the above-mentioned object, and provides a method for peeling a bonded wafer, the method comprising: peeling a support from a bonded wafer having a device structure having two or more electrodes of different polarity on one side of an epitaxial functional layer, the device structure being bonded to a support made of a heterogeneous substrate with a hardening type bonding material; and irradiating the bonded wafer with laser light, causing the laser light to be absorbed by at least a portion of the surface of the device structure in contact with the hardening type bonding material, and decomposing the surface of the hardening type bonding material and / or the device structure, thereby separating the device structure from the support.

[0011] In the method for peeling a bonded wafer of the present invention, the support can be easily peeled off from the device structure by irradiating the support with laser light, and therefore the survival rate of the device structure (the rate at which the device structure remains without being destroyed) can be increased compared to removing the support by mechanical processing or etching.

[0012] In the bonded wafer delamination method of the present invention, the epitaxial functional layer may have a light emitting element structure.

[0013] The epitaxial functional layer may include an AlGaInP-based material.

[0014] The present invention can be suitably employed in delaminating bonded wafers having such structures.

[0015] In the bonded wafer separation method of the present invention, the curable bonding material preferably has any one of the curing properties of heat curing, UV curing, and room temperature curing.

[0016] In this case, it is preferable that the curable bonding material contains one of benzocyclobutene, polyimide, fluororesin, epoxy resin, and silicone resin.

[0017] The method for delaminating a bonded wafer of the present invention is particularly suitable when such a hardening type bonding material is used.

[0018] It is also preferable that the epitaxial functional layer is one from which the starting substrate for epitaxial growth has been removed.

[0019] The method for delaminating a bonded wafer of the present invention can be suitably applied to delamination of a bonded wafer from which the starting substrate has been removed.

[0020] Moreover, the heterosubstrate is preferably made of any one of the following materials: sapphire, SiC, synthetic quartz, quartz, glass, LiTaO3, and LiNbO3.

[0021] Such a heterosubstrate can be selected so as to have high transparency to a laser, and is suitable for the bonded wafer separation method of the present invention.

[0022] The laser light is preferably an excimer laser.

[0023] In this manner, by using an excimer laser as the laser light, the bonded wafer can be more reliably separated.

[0024] In addition, it is preferable that, prior to the irradiation with the laser light, a temporary support substrate coated with an adhesive is adhered to the surface of the epitaxial functional layer of the bonded wafer opposite to the heterosubstrate.

[0025] In this case, the adhesive is preferably silicone.

[0026] The temporary support substrate is preferably made of any one of sapphire, SiC, synthetic quartz, quartz, glass, LiTaO3, and LiNbO3.

[0027] By using such a temporary support substrate and adhesive, the bonded wafer can be peeled off more smoothly. Effect of the Invention

[0028] In the method for peeling a bonded wafer of the present invention, the support can be easily peeled off from the device structure by irradiating a laser beam. Peeling by irradiating a laser beam applies less stress to the device. Therefore, the survival rate of the device structure (the rate at which the device structure remains without being destroyed) can be increased compared to removing the support by mechanical processing or etching. [Brief description of the drawings]

[0029] [Figure 1] FIG. 1 is a schematic diagram showing the steps of producing an epitaxial wafer having an epitaxial functional layer on a starting substrate as part of a process for producing a bonded wafer. [Diagram 2] FIG. 1 is a schematic diagram showing a step of bonding an epitaxial wafer and a foreign substrate as part of a process for producing a bonded wafer. [Diagram 3] FIG. 2 is a schematic diagram showing the removal of the starting substrate as part of the process for making a bonded wafer. [Figure 4] FIG. 2 is a schematic diagram showing the step of forming a first electrode as part of the process for making a bonded wafer. [Diagram 5] FIG. 1 is a schematic diagram showing the step of forming a notch as part of the process for making a bonded wafer. [Figure 6] FIG. 2 is a schematic diagram showing the step of forming a second electrode as part of the process for making a bonded wafer. [Figure 7] 10 is a schematic diagram showing a step of bonding a bonded wafer to a temporary supporting substrate before peeling of the bonded wafer. FIG. [Figure 8] 1 is a schematic diagram showing an example of a first embodiment of a delamination method for a bonded wafer according to the present invention. FIG. [Figure 9] FIG. 4 is a schematic diagram showing an example of a second embodiment of a delamination method for a bonded wafer according to the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0030] The present invention will be described in detail below, but the present invention is not limited thereto.

[0031] The present invention is a method for peeling a bonded wafer, which has a device structure having two or more electrodes of different polarity on one surface of an epitaxial functional layer, and in which the device structure is bonded to a support made of a heterogeneous substrate with a hardening type bonding material, and which peels off the support from the bonded wafer, characterized in that the bonded wafer is irradiated with laser light, causing the hardening type bonding material and / or at least a portion of the surface of the device structure in contact with the hardening type bonding material to absorb the laser light, and decomposing the surface of the hardening type bonding material and / or the device structure, thereby separating the device structure from the support.

[0032] The bonded wafer to which the delamination method of the present invention can be applied is a bonded wafer having a device structure having two or more electrodes of different polarities on one surface of an epitaxial functional layer, as described above, and the device structure is bonded to a support made of a heterogeneous substrate with a curable bonding material. This bonded wafer can be produced, for example, as follows, but is not limited thereto.

[0033] [First embodiment] In the first embodiment, a case where a silicone resin is used as the curable bonding material will be mainly described as an example.

[0034] First, as shown in FIG. 1, each layer is formed by epitaxial growth on a starting substrate 10 in sequence. This produces an epitaxial functional layer. More specifically, each layer can be epitaxially grown as follows. As shown in FIG. 1, a first conductive GaAs starting substrate is prepared as the starting substrate 10, and then a first conductive GaAs buffer layer 11 is laminated. Then, a first conductive GaInP first etch stop layer 12 is grown to a thickness of, for example, 0.3 μm, a first conductive GaAs second etch stop layer 13 is grown to a thickness of, for example, 0.3 μm, a first conductive AlGaInP first cladding layer 14 is grown to a thickness of, for example, 1.0 μm, a non-doped AlGaInP active layer 15, a second conductive AlGaInP second cladding layer 16 is grown to a thickness of, for example, 1.0 μm, a second conductive GaInP intermediate layer 17 is grown to a thickness of, for example, 0.1 μm, and a second conductive GaP window layer 18 is grown to a thickness of, for example, 4 μm. This prepares an epitaxial wafer 100 having a light emitting device structure as the epitaxial functional layer 19. Here, the layers from the AlGaInP first cladding layer 14 to the AlGaInP second cladding layer 16 are referred to as a DH structure (double hetero structure).

[0035] Next, as shown in FIG. 2, the epitaxial wafer 100 and the heterogeneous substrate 21 are bonded with a curable bonding material 22. The heterogeneous substrate 21 serves as a support for the bonded wafer. More specifically, the bonding can be performed as follows. As shown in FIG. 2, the epitaxial wafer 100 is spin-coated with a silicone resin as a curable bonding material (thermosetting bonding member) 22, and the epitaxial wafer 100 is placed face-to-face with a sapphire wafer as the heterogeneous substrate 21, and the epitaxial wafer 100 and the sapphire wafer as the heterogeneous substrate 21 are bonded with the silicone resin as the curable bonding material 22 by thermocompression bonding. In this way, an epitaxial wafer bonded substrate 200 is produced. When applying the silicone resin by spin coating, the designed film thickness can be, for example, about 1.0 μm.

[0036] The present invention is not limited to a method of directly spin-coating the curable bonding material 22 on the epitaxial wafer 100, and the same effect can be obtained by performing spin-coating after laminating one or more transparent films on the epitaxial wafer 100. The transparent film may be made of SiO2, SiN x or a transparent conductive film made of indium oxide, tin oxide, ITO (indium tin oxide), or the like.

[0037] Moreover, the heterosubstrate 21 is not limited to sapphire, and any material that ensures flatness and has a low laser light absorption rate can be selected. In addition to sapphire, SiC, synthetic quartz, quartz (natural quartz), glass, LiTaO3, LiNbO3, etc. can be selected.

[0038] Furthermore, the curable bonding material 22 is not limited to silicone resin, and any material may be selected as long as it has curing properties, particularly thermosetting properties. In addition to silicone resin, fluororesin or the like may also be used.

[0039] Next, as shown in FIG. 3, the starting substrate 10 is removed, leaving the epitaxial functional layer 19 on the heterosubstrate 21. More specifically, the removal can be performed as follows. As shown in FIG. 3, the GaAs starting substrate 10 (and the GaAs buffer layer 11) is removed by wet etching using a selective etchant such as ammonia hydrogen peroxide (a mixture of ammonia water and hydrogen peroxide water), exposing the GaInP first etch stop layer 12. Next, the etchant is switched to a hydrochloric acid system to selectively remove the GaInP first etch stop layer 12, exposing the GaAs second etch stop layer 13. Next, the etchant is switched to a sulfuric acid hydrogen peroxide system to selectively remove the GaAs second etch stop layer 13, exposing the first cladding layer 14. By performing the above processes, a bonded substrate 300 holding the epitaxial functional layer 19 (more specifically, the DH layer (from the AlGaInP first cladding layer 14 to the AlGaInP second cladding layer 16) and the window layer 18) is fabricated.

[0040] In this example, the thickness of the curable bonding material 22 is exemplified as a silicone resin thickness of 1.0 μm, but the thickness is not limited to this thickness, and the same effect can be obtained even if the thickness is thinner or thicker than this thickness. However, since the silicone resin is formed by spin coating, if it is too thin, the area yield after the bonding process tends to decrease. In order to maintain an area yield of 90% or more after bonding, it is preferable to design the adhesive layer thickness to be 0.05 μm or more. Also, if it is sufficient to maintain a bonding area yield of 70% or more, it is sufficient to design the silicone resin to be 0.01 μm or more. However, from an economical point of view, it is preferable to set the film thickness to 10 μm or less.

[0041] 4, a first electrode 41 is formed on a partial region of the first conductive type AlGaInP first cladding layer 14. The first electrode 41 is preferably made of a highly reflective metal, and may be an Au-based electrode. For example, AuBe may be used for the metal in contact with the AlGaInP first cladding layer 14 of this first electrode 41.

[0042] Next, as shown in FIG. 5, after the first electrode 41 is formed, a portion of the region of the first conductivity type AlGaInP first cladding layer 14 other than the region where the first electrode 41 is to be formed is cut out by a method such as dry etching, and the second conductivity type GaP window layer 18 is exposed in the cutout portion.

[0043] Although FIG. 5 shows an example in which only the semiconductor layer portion is cut out, this is not limited to the case in which only the semiconductor portion is cut out, and the curable bonding material 22 (silicone resin) portion may also be cut out, or the heterogeneous substrate 21 portion may also be cut out.

[0044] Next, as shown in FIG. 6, the side surface is covered with a passivation (PSV) film 65. Furthermore, a bonded substrate having a device structure in which a second electrode 61 is formed in the exposed region is fabricated. It is preferable to use a highly reflective metal for the second electrode 61. Specifically, an Au-based material can be used, and an AuSi-based material is preferable. As described above, the PSV film 65 may be formed before the formation of the second electrode 61, or the PSV film 65 may be formed after the formation of the second electrode 61. It is also not necessary to form the PSV film 65 itself. After the formation of the first and second electrodes, an RTA heat treatment is performed, for example, at 400° C. for 5 minutes, to obtain ohmic contact.

[0045] In this manner, a bonded wafer (bonded substrate having a device structure) 600 is produced in which a device structure having two or more electrodes (first electrode 41 and second electrode 61) of different polarity on one side of the epitaxial functional layer 19 is bonded to a support consisting of a heterogeneous substrate 21 with a curable bonding material 22.

[0046] The present invention is a method for peeling a support made of a dissimilar substrate 21 from such a bonded wafer 600, and is characterized in that by irradiating a laser beam to the bonded wafer 600, the laser beam is absorbed in at least a part of the surface of the curable bonding material 22 and / or the device structure part in contact with the curable bonding material 22, and the surface of the curable bonding material 22 and / or the device structure part is decomposed, thereby separating the device structure part from the support part. In the first embodiment, the aspect of decomposition of the surface of the device structure part will be mainly described. This separation can be specifically performed as follows.

[0047] First, as shown in Fig. 7, before the laser light irradiation, it is preferable to adhere a temporary support substrate 71 coated with an adhesive 72 to the surface of the epitaxial functional layer 19 opposite to the heterogeneous substrate 21 of the bonded wafer. Specifically, this adhesion is as follows. First, as shown in Fig. 7, a temporary support substrate 71 coated with a layer of silicone adhesive 72 on a synthetic quartz wafer is prepared as the temporary support substrate 71, and the bonded wafer 600 and the temporary support substrate 71 are placed opposite each other and pressed to adhere to the adhesive.

[0048] Note that the temporary support substrate 71 is not limited to synthetic quartz, and sapphire, quartz (natural quartz), glass, SiC, LiTaO3, LiNbO3, etc. can be used.

[0049] Next, as shown in FIG. 8, an excimer laser is irradiated from the side of the heterogeneous substrate 21, and the laser light transmitted through the heterogeneous substrate (sapphire substrate) 21 and the curable bonding material (silicone resin bonding layer) 22 is absorbed by the GaP window layer 18 and decomposed (ablated) to peel the heterogeneous substrate 21 from the epitaxial functional layer 19.

[0050] [Second Embodiment] In the second embodiment, mainly, the case of using BCB as the curable bonding material will be exemplified and described. For the steps similar to those in the first embodiment, refer to FIGS. 1 to 7, and for the peeling of the bonded wafer, refer to FIG. 9.

[0051] First, as shown in FIG. 1, epitaxial growth is sequentially performed on the starting substrate 10 to form each layer. Thereby, an epitaxial functional layer is fabricated. More specifically, the epitaxial growth of each layer can be performed as follows. As shown in FIG. 1, after preparing a first-conductivity-type GaAs starting substrate as the starting substrate 10, a first-conductivity-type GaAs buffer layer 11 is laminated, and then a first-conductivity-type Ga x In 1-x P (0.4 ≦ x ≦ 0.6) first etch stop layer 12 is, for example, 0.3 μm, a first-conductivity-type GaAs second etch stop layer 13 is, for example, 0.3 μm, and a first-conductivity-type (Al y Ga 1-y ) x In 1-x P (0.4 ≦ x ≦ 0.6, 0 < y ≦ 1) first cladding layer 14 is, for example, 1.0 μm, an undoped (Al y Ga 1-y ) x In 1-x P (0.4 ≦ x ≦ 0.6, 0 ≦ y ≦ 0.6) active layer 15, a second-conductivity-type (Al y Ga 1-y ) x In 1-xP(0.4 ≦ x ≦ 0.6, 0 < y ≦ 1), the second cladding layer 16 can be grown, for example, to a thickness of 1.0 μm, the p-type GaInP intermediate layer 17 can be grown, for example, to a thickness of 0.1 μm, and the p-type GaP window layer 18 can be grown, for example, to a thickness of 4 μm, in sequence. Thereby, an epitaxial wafer 100 having a light-emitting element structure as the epitaxial functional layer 19 is prepared. Here, from the AlGaInP first cladding layer 14 to the AlGaInP second cladding layer 16 is referred to as a DH structure portion (double heterostructure portion).

[0052] Next, as shown in FIG. 2, the epitaxial wafer 100 and the heterogeneous substrate 21 are bonded together with a curable bonding material 22. More specifically, the bonding can be performed as follows. As shown in FIG. 2, benzocyclobutene (BCB) is spin-coated as the curable bonding material (thermosetting bonding member) 22 on the epitaxial wafer 100, and is overlapped with the sapphire wafer as the heterogeneous substrate 21 and pressed thermally, thereby bonding the epitaxial wafer 100 and the sapphire wafer as the heterogeneous substrate 21 via the BCB as the curable bonding material 22. In this way, an epitaxial wafer bonded substrate 200 is fabricated. When applying BCB by spin coating, the designed film thickness can be, for example, about 1.0 μm.

[0053] Note that the present invention is not limited to directly spin-coating the curable bonding material 22 on the epitaxial wafer 100, and it goes without saying that the same effect can be obtained by performing spin coating after laminating one or more transparent films on the epitaxial wafer 100. The transparent film can have a structure having one or more insulating films such as SiO2 and SiN x and one or more transparent conductive films such as indium oxide, tin oxide, and ITO (indium tin oxide).

[0054] Also, the heterogeneous substrate 21 is not limited to sapphire, and any material can be selected as long as flatness is ensured and the absorption rate of laser light is low. In addition to sapphire, SiC, synthetic quartz, quartz (natural quartz), glass, LiTaO3, LiNbO3, etc. can be selected.

[0055] In addition, the hardening type bonding material 22 is not limited to BCB, and any material having hardening properties can be selected. In addition to BCB, epoxy resin, SOG (spin-on-glass), PI (Polyimide), etc. may be used.

[0056] Next, as shown in FIG. 3, the starting substrate 10 is removed, leaving the epitaxial functional layer 19 on the heterosubstrate 21. More specifically, the removal can be performed as follows. As shown in FIG. 3, the GaAs starting substrate 10 and the GaAs buffer layer 11 are removed by wet etching using a selective etchant such as ammonia hydrogen peroxide (a mixture of ammonia water and hydrogen peroxide water), exposing the GaInP first etch stop layer 12. Next, the etchant is switched to a hydrochloric acid system to selectively remove the GaInP first etch stop layer 12, exposing the GaAs second etch stop layer 13. Next, the etchant is switched to a sulfuric acid hydrogen peroxide system to selectively remove the GaAs second etch stop layer 13, exposing the first cladding layer 14. By performing the above processes, a bonded substrate 300 is fabricated that holds the epitaxial functional layer 19 (more specifically, the DH layer (from the AlGaInP first cladding layer 14 to the AlGaInP second cladding layer 16) and the window layer 18).

[0057] Here, a BCB thickness of 1.0 μm is exemplified as the thickness of the curable bonding material 22, but the thickness is not limited to this thickness, and the same effect can be obtained even if the thickness is thinner or thicker than this thickness. However, since the BCB is formed by spin coating, if it is too thin, the area yield after the bonding process tends to decrease. In order to maintain an area yield of 90% or more after bonding, it is preferable to design an adhesive layer thickness of 0.05 μm or more. Also, if it is sufficient to maintain a bonding area yield of 70% or more, it is sufficient to design a BCB thickness of 0.01 μm or more. However, from an economical point of view, it is preferable to set the film thickness to 10 μm or less.

[0058] 4, a first electrode 41 is formed on a partial region of the first conductive type AlGaInP first cladding layer 14. The first electrode 41 is preferably made of a highly reflective metal, and may be an Au-based electrode. For example, AuBe may be used for the metal in contact with the AlGaInP first cladding layer 14 of this first electrode 41.

[0059] Next, as shown in FIG. 5, after the first electrode 41 is formed, a portion of the region of the first conductivity type AlGaInP first cladding layer 14 other than the region where the first electrode 41 is to be formed is cut out by a method such as dry etching, and the second conductivity type GaP window layer 18 is exposed in the cutout portion.

[0060] Although FIG. 5 shows an example in which only the semiconductor layer portion is cut out, this is not limited to the case in which only the semiconductor portion is cut out, and the curable bonding material 22 (BCB) portion may be cut out as well, or the heterogeneous substrate 21 portion may be cut out as well.

[0061] Next, as shown in FIG. 6, the side surface is covered with a passivation (PSV) film 65. Furthermore, a bonded substrate having a device structure in which a second electrode 61 is formed in the exposed region is fabricated. It is preferable to use a highly reflective metal for the second electrode 61. Specifically, an Au-based material can be used, and an AuSi-based material is preferable. As described above, the PSV film 65 may be formed before the formation of the second electrode 61, or the PSV film 65 may be formed after the formation of the second electrode 61. It is also not necessary to form the PSV film 65 itself. After the formation of the first and second electrodes, an RTA heat treatment is performed, for example, at 400° C. for 5 minutes, to obtain ohmic contact.

[0062] In this manner, a bonded wafer 600 is produced in which a device structure having two or more electrodes (first electrode 41 and second electrode 61) of different polarity on one side of the epitaxial functional layer 19 is bonded to a support body consisting of a heterogeneous substrate 21 with a curable bonding material 22.

[0063] The present invention is a method for peeling a support made of a dissimilar substrate 21 from such a bonded wafer 600, and is characterized in that by irradiating a laser beam to the bonded wafer 600, the laser beam is absorbed in at least a part of the curable bonding material 22 and / or the surface of the device structure part in contact with the curable bonding material 22 (i.e., the surface of the window layer 18 in the case of FIG. 6), and the curable bonding material 22 and / or the surface of the device structure part are decomposed, thereby separating the device structure part from the support part. In the second embodiment, the aspect due to the decomposition of the curable bonding material 22 will be mainly described.

[0064] Specifically, this separation can be performed as follows. First, before the laser light irradiation, it is preferable to adhere a temporary support substrate coated with an adhesive to the surface of the bonded wafer of the epitaxial functional layer opposite to the heterogeneous substrate. For example, as shown in Fig. 7, a temporary support substrate 71 is prepared by applying a layer of silicone adhesive 72 onto a synthetic quartz wafer as a temporary support substrate 71, and the bonded wafer 600 and the temporary support substrate 71 are placed opposite each other and pressed against each other to adhere to the adhesive.

[0065] The material of the temporary support substrate 71 is not limited to synthetic quartz, but may be sapphire, quartz (natural quartz), glass, SiC, LiTaO3, LiNbO3, or the like.

[0066] Next, as shown in Figure 9, an excimer laser is irradiated from the heterogeneous substrate (sapphire substrate) 21 side, and the laser light passes through the heterogeneous substrate (sapphire substrate) 21 and reaches the curable bonding material (BCB bonding layer) 22. The BCB layer 22 then decomposes (ablates) the BCB layer 22, creating voids and peeling the heterogeneous substrate 21 from the epitaxial functional layer 19.

[0067] As described above, the curable bonding material 22 is mainly a thermosetting bonding material such as silicone resin or BCB. However, the present invention can also be applied to a method for peeling a bonded wafer using a material having a curing property such as UV curing or room temperature curing. EXAMPLES

[0068] Hereinafter, the present invention will be described in detail with reference to Examples and Comparative Examples, but these do not limit the present invention.

[0069] (Example 1) On an n-type GaAs starting substrate 10, after laminating an n-type GaAs buffer layer 11, an n-type Ga x In 1-x P (0.4 ≦ x ≦ 0.6) first etch stop layer 12 with a thickness of 0.3 μm, an n-type GaAs second etch stop layer 13 with a thickness of 0.3 μm, and an n-type (Al y Ga 1-y ) x In 1-x P (0.4 ≦ x ≦ 0.6, 0 < y ≦ 1) first cladding layer 14 with a thickness of 1.0 μm, an undoped (Al y Ga 1-y ) x In 1-x P (0.4 ≦ x ≦ 0.6, 0 ≦ y ≦ 0.6) active layer 15, a p-type (Al y Ga 1-y ) x In 1-x P (0.4 ≦ x ≦ 0.6, 0 < y ≦ 1) second cladding layer 16 with a thickness of 1.0 μm, a p-type GaInP intermediate layer 17 with a thickness of 0.1 μm, and a p-type GaP window layer 18 with a thickness of 4 μm were sequentially grown to prepare an epitaxial wafer 100 having a light-emitting element structure as an epitaxial functional layer 19. (See FIG. 1)

[0070] Next, a silicone resin was spin-coated on the epitaxial wafer 100 as a thermosetting joint member 22 to form a first joint layer. The epitaxial wafer 100 and a sapphire substrate, which is a different substrate 21, were overlapped facing each other and thermocompression-bonded, thereby producing an epitaxial wafer bonded substrate (first compound semiconductor bonded substrate) 200 in which the epitaxial wafer 100 and the sapphire substrate, which is a different substrate 21, were bonded via the silicone resin, which is a thermosetting bonding material 22. When applying the silicone resin by spin coating, the designed film thickness was 1.0 μm. (See FIG. 2)

[0071] The GaAs starting substrate 10 and GaAs buffer layer 11 were removed by wet etching using ammonia / hydrogen peroxide water to expose the GaInP first etch stop layer 12. The etchant was then switched to a hydrochloric acid-based solution to selectively remove the GaInP first etch stop layer 12 and expose the GaAs second etch stop layer 13. The etchant was then switched to a sulfuric acid / hydrogen peroxide-based solution to selectively remove the GaAs second etch stop layer 13 and expose the first cladding layer 14. By carrying out the above processes, a bonded substrate (second compound semiconductor bonded substrate) 300 was produced that holds an epitaxial functional layer 19 (more specifically, a DH layer (first cladding layer 14 to second cladding layer 16) and a window layer 18). (See FIG. 3)

[0072] Next, an AuBe-based first electrode 41 was formed on a partial region of the n-type first cladding layer 14 (see FIG. 4).

[0073] After the first electrode was formed, a part of the n-type first cladding layer 14 other than the area where the first electrode 41 was to be formed was cut out by dry etching to expose the p-type GaP window layer 18 in the cutout (see FIG. 5).

[0074] Next, the side surface was covered with a passivation (PSV) film 65, and a AuSi-based second electrode 61 was formed on the exposed area to produce a bonded wafer (bonded substrate having a device structure) 600. After the formation of the first and second electrodes, an RTA heat treatment was performed at 400°C for 5 minutes to obtain an ohmic contact (see Figure 6).

[0075] Next, a temporary support substrate 71 was prepared by applying a layer of silicone adhesive 72 onto a synthetic quartz wafer, and the bonded wafer 600 and the temporary support substrate 71 were placed opposite each other and pressed together to adhere to the adhesive (see FIG. 7).

[0076] An excimer laser was irradiated from the sapphire substrate side, which was the heterosubstrate 21, and the laser light that was transmitted through the sapphire substrate and the silicone bonding layer 72 was absorbed by the p-type GaP window layer 18 and decomposed (ablated), and the sapphire substrate, which was the heterosubstrate 21, was peeled off from the epitaxial functional layer 19 (see FIG. 8).

[0077] (Example 2) On the n-type GaAs starting substrate 10, after laminating the n-type GaAs buffer layer 11, n-type Ga x In 1-x P (0.4 ≤ x ≤ 0.6) first etch stop layer 12 is 0.3 μm, n-type GaAs second etch stop layer 13 is 0.3 μm, n-type (Al y Ga 1-y ) x In 1-x P (0.4 ≤ x ≤ 0.6, 0 < y ≤ 1) first cladding layer 14 is 1.0 μm, non-doped (Al y Ga 1-y ) x In 1-x P (0.4 ≤ x ≤ 0.6, 0 ≤ y ≤ 0.6) active layer 15, p-type (Al y Ga 1-y ) x In 1-x P (0.4 ≤ x ≤ 0.6, 0 < y ≤ 1) second cladding layer 16 is 1.0 μm, p-type GaInP intermediate layer 17 is 0.1 μm, p-type GaP window layer 18 is 4 μm, and an epitaxial wafer 100 having a light-emitting element structure as an epitaxial functional layer 19 grown in sequence was prepared. (See FIG. 1)

[0078] On the epitaxial wafer 100, benzocyclobutene (BCB) was spin-coated as a thermosetting bonding member 22 to form a first bonding layer, and it was overlapped with the sapphire substrate which is a different substrate 21 and thermocompression bonded to bond the epitaxial wafer 100 and the sapphire substrate which is a different substrate 21 via BCB to produce an epitaxial wafer bonding substrate (first compound semiconductor bonding substrate) 200. When applying BCB by spin coating, the designed film thickness was 1.0 μm. (See FIG. 2)

[0079] Next, the GaAs starting substrate 10 and the GaAs buffer layer 11 were removed by wet etching using a selective etchant such as ammonia hydrogen peroxide, exposing the GaInP first etch stop layer 12. The etchant was then switched to a hydrochloric acid-based solution to selectively remove the GaInP first etch stop layer 12 and expose the GaAs second etch stop layer 13. The etchant was then switched to a sulfuric acid hydrogen peroxide-based solution to selectively remove the GaAs second etch stop layer 13 and expose the first cladding layer 14. By carrying out the above processes, a bonded substrate (second compound semiconductor bonded substrate) 300 holding an epitaxial functional layer 19 (more specifically, the DH layer (first cladding layer 14 to A second cladding layer 16) and the window layer 18) was fabricated (see FIG. 3).

[0080] Next, an AuBe-based first electrode 41 was formed on a partial region of the n-type first cladding layer 14 (see FIG. 4).

[0081] After the first electrode was formed, a part of the n-type first cladding layer 14 other than the area where the first electrode 41 was to be formed was cut out by dry etching to expose the p-type GaP window layer 18 in the cutout (see FIG. 5).

[0082] A bonded wafer (bonded substrate having a device structure) 600 was produced, in which the side surface was covered with a passivation (PSV) film 65 and an AuSi-based second electrode 61 was formed in the exposed region.

[0083] After forming the first and second electrodes, RTA heat treatment was performed at 400°C for 5 minutes to obtain ohmic contact (see Figure 6).

[0084] Next, a temporary support substrate 71 was prepared by applying a layer of silicone adhesive 72 onto a synthetic quartz wafer, and the bonded wafer 600 and the temporary support substrate 71 were placed opposite each other and pressed together to adhere to the adhesive (see FIG. 7).

[0085] An excimer laser was irradiated from the sapphire substrate side, which is the heterogeneous substrate 21, and the laser light that passed through the sapphire substrate and reached the BCB bonding layer 72 was absorbed by the BCB layer, causing the BCB layer to decompose (ablation) to generate voids, and the sapphire substrate, which is the heterogeneous substrate 21, was peeled off from the epitaxial functional layer. (See Fig. 9)

[0086] (Comparative Example) On an n-type GaAs starting substrate, after laminating an n-type GaAs buffer layer, n-type Ga x In 1-x P(0.4 ≦ x ≦ 0.6) first etch stop layer was 0.3 μm, n-type GaAs second etch stop layer was 0.3 μm, n-type (Al y Ga 1-y ) x In 1-x P(0.4 ≦ x ≦ 0.6, 0 < y ≦ 1) first cladding layer was 1.0 μm, undoped (Al y Ga 1-y ) x In 1-x P(0.4 ≦ x ≦ 0.6, 0 ≦ y ≦ 0.6) active layer, second conductivity type (Al y Ga 1-y ) x In 1-x P(0.4 ≦ x ≦ 0.6, 0 < y ≦ 1) second cladding layer was 1.0 μm, p-type GaInP intermediate layer was 0.1 μm, p-type GaP window layer 18 was 4.0 μm, and an epitaxial wafer having a light-emitting element structure as an epitaxial functional layer was sequentially grown.

[0087] Next, benzocyclobutene (BCB) was spin-coated on the epitaxial wafer as a thermosetting bonding member, and it was superposed facing a silicon wafer and thermocompression bonded to fabricate an EPW bonding substrate in which the epitaxial wafer and the silicon wafer were bonded via BCB. When applying BCB by spin coating, the designed film thickness was 1.0 μm.

[0088] The GaAs starting substrate was removed by wet etching to expose the first etch-stop layer, and the etchant was switched to remove the second etch-stop layer to expose the first cladding layer, producing an epitaxial junction substrate retaining only the DH layer and window layer.

[0089] Next, an AuBe-based first electrode was formed on a partial region of the n-type first cladding layer.

[0090] After the first electrode was formed, a part of the n-type first cladding layer other than the region where the first electrode was formed was cut away by dry etching to expose the p-type GaP window layer in the cutaway portion.

[0091] The side surface was covered with a passivation (PSV) film. A bonded wafer (bonded substrate with device structure) was produced with an AuSi-based second electrode formed on the exposed area. After forming the first and second electrodes, RTA heat treatment was performed at 400°C for 5 minutes to obtain ohmic contact.

[0092] Next, a temporary support substrate was prepared by applying a layer of silicone adhesive onto a silicon wafer, and the bonding substrate having the device structure and the temporary support substrate were placed opposite each other and pressed against each other to adhere to the adhesive.

[0093] The silicon wafer (foreign substrate) side was thinned by surface grinding and other processes. After the silicon wafer (foreign substrate) reached a thickness of 150 μm or less, it was immersed in a fluorine-nitric acid-based etching solution to remove the silicon wafer (foreign substrate). After removing the silicon wafer (foreign substrate), the BCB was removed by ashing or dry etching.

[0094] Table 1 shows the device portion survival rate after removal of the dissimilar substrate in Examples 1 and 2 and the Comparative Example. In Examples 1 and 2, the stress applied to the device during the peeling process was small, and a good device portion survival rate was shown, whereas in the Comparative Example, the mechanical stress applied to the device portion during mechanical processing of the dissimilar substrate was large, and damage occurred to the device portion after processing, resulting in a low device portion survival rate.

[0095] [Table 1]

[0096] The present invention is particularly effective when the starting substrate for epitaxial growth is an opaque substrate. Such an opaque substrate does not transmit a laser or transmits a laser only to an extent insufficient for ablation to occur, so it is difficult to separate the device structure by irradiating the starting substrate for epitaxial growth with a laser (also called laser lift-off). Therefore, the present invention is effective when the starting substrate for epitaxial growth is a gallium arsenide substrate or when the device structure is a red LED. The red LED may be a micro LED or a mini LED.

[0097] In addition, it is preferable that the various substrates (starting substrate for epitaxial growth, support, heterogeneous substrate, temporary support substrate) in the present invention be disk-shaped from the standpoint of cost and ease of application to various devices, but the effects of the present invention can be achieved even if the substrates have other shapes, such as an elliptical cylinder or a polygonal cylinder such as a square cylinder.

[0098] In addition, in Figure 6 and other figures, the description is given so that one device structure is depicted, but a plurality of device structures may be bonded to the support, and the plurality of device structures may be arranged in a matrix.

[0099] The shape of the device structure when observed from a direction perpendicular to the main surface of the support may be a circle, an ellipse, a rectangle, or other polygonal shape. Among these, a rectangle is preferable because it increases the number of device structures that can be manufactured at one time. Here, the circle, ellipse, rectangle, and polygon do not mean the strict circle, ellipse, rectangle, and polygon, but also include recesses and bulges in straight and curved parts, chamfered corners, and the like.

[0100] The thickness of the cured layer for bonding the device structure may be sufficient as long as it can withstand the process of peeling the device structure from the support. In other words, since the support will eventually peel off, bonding reliability over several years is not required, and the thickness may be relatively thin. This is advantageous in performing laser lift-off. Specifically, depending on the material contained in the curable bonding material and the bonding performance, the thickness is preferably 0.1 to 1.0 μm, and more preferably 0.4 to 0.6 μm.

[0101] Although the embodiments of the present invention have been described in detail above, the present invention can be expressed from different viewpoints as follows (1) to (15), (U1) to (U89), and (X1) to (X4). (1) A bonded wafer in which a device structure is bonded to a support via a hardened layer of a hardening bonding material, and which is used to peel off the device structure by irradiation with laser light. (2) The bonded wafer according to (1), wherein the device structure is a red LED chip. (3) The bonded wafer according to (1), wherein the device structure portion contains an AlGaInP-based material. (4) The bonded wafer according to (1), wherein the cured layer has a thickness of 0.1 to 1.0 μm. (5) The bonded wafer according to (2), wherein the hardened layer has a thickness of 0.4 to 0.6 μm. (6) The bonded wafer according to (1), wherein the device structure portion has an epitaxial functional layer from which a starting substrate for epitaxial growth has been removed. (7) The bonded wafer according to (1), wherein the curable bonding material includes at least one selected from the group consisting of benzocyclobutene, polyimide, fluororesin, epoxy resin, and silicone resin. (8) The bonded wafer according to (1), wherein the support has at least one selected from the group consisting of a sapphire substrate, a SiC substrate, a synthetic quartz substrate, a quartz substrate, a glass substrate, a LiTaO3 substrate, and a LiNbO3 substrate. (9) The device structure is a red LED chip including an AlGaInP-based material, The thickness of the cured layer is 0.1 to 1.0 μm, The device structure has an epitaxial functional layer from which a starting substrate for epitaxial growth has been removed, The curable bonding material includes at least one selected from the group consisting of benzocyclobutene, polyimide, fluororesin, epoxy resin, and silicone resin, 2. The bonded wafer according to claim 1, wherein the support comprises at least one selected from the group consisting of a sapphire substrate, a SiC substrate, a synthetic quartz substrate, a quartz substrate, a glass substrate, a LiTaO3 substrate, and a LiNbO3 substrate. (10) The device structure is a red LED chip including an AlGaInP-based material, The thickness of the cured layer is 0.4 to 0.6 μm, The device structure has an epitaxial functional layer from which a starting substrate for epitaxial growth has been removed, The curable bonding material contains benzocyclobutene, 2. The bonded wafer according to claim 1, wherein the support has a sapphire substrate. (11) A method for peeling a support from a bonded wafer in which a device structure is bonded to a support via a hardened layer of a hardening bonding material, the method comprising the steps of: A method for separating a bonded wafer, comprising the steps of: irradiating a laser beam from a support side of the bonded wafer to separate the device structure from the support. (12) A method for producing a separated device structure, comprising peeling off a support from a bonded wafer in which a device structure is bonded to a support via a hardened layer of a hardening bonding material, the method comprising the steps of: A method for producing a separated device structure, comprising: irradiating a laser beam from the support side of the bonded wafer to separate the device structure from the support. (13) A bonded body in which a device structure is bonded to a support via a cured layer of a curable bonding material, the bonded body being used for peeling off the device structure by irradiation with laser light. (14) A method for peeling off a support from a bonded body in which a device structure is bonded to a support via a cured layer of a curable bonding material, comprising the steps of: A method for peeling off a bonded body, comprising the steps of: irradiating a laser beam from the support side of the bonded body to separate the device structure from the support. (15) A method for producing a separated device structure, comprising peeling off a support from a bonded body in which a device structure is bonded to a support via a cured layer of a curable bonding material, the method comprising the steps of: A method for producing a separated device structure, comprising: separating the device structure from the support by irradiating the support side of the bonded body with laser light. (U1) A bonded wafer delamination system for delaminating a support from a bonded wafer having a device structure having two or more electrodes of different polarities on one surface of an epitaxial functional layer, the device structure being bonded to a support made of a heterogeneous substrate by a curable bonding material, the system comprising: A bonded wafer delamination system characterized by having a mechanism for irradiating the bonded wafer with laser light generated from a laser oscillator, causing the hardenable bonding material and / or at least a portion of the surface of the device structure in contact with the hardenable bonding material to absorb the laser light, thereby decomposing the surface of the hardenable bonding material and / or the device structure, thereby separating the device structure from the support. (U2) The system for delaminating a bonded wafer according to (U1), wherein the epitaxial functional layer has a light emitting device structure. (U3) The system for delaminating a bonded wafer according to (U1) or (U2), wherein the epitaxial functional layer contains an AlGaInP-based material. (U4) A bonded wafer delamination system according to (U1) or (U2), characterized in that the curable bonding material has any one of the curing properties of heat curing, UV curing, and room temperature curing. (U5) A system for delaminating a bonded wafer as described in (U1) or (U2), characterized in that the curable bonding material includes one of benzocyclobutene, polyimide, fluororesin, epoxy resin, and silicone resin. (U6) The system for delaminating a bonded wafer according to (U1) or (U2), characterized in that the epitaxial functional layer is one from which the starting substrate for epitaxial growth has been removed. (U7) A system for delaminating a bonded wafer according to (U1) or (U2), characterized in that the heterogeneous substrate is made of any one of the following materials: sapphire, SiC, synthetic quartz, quartz, glass, LiTaO3, and LiNbO3. (U8) A bonded wafer delamination system according to (U1) or (U2), characterized in that the laser light is an excimer laser. (U9) A system for delaminating a bonded wafer as described in (U1) or (U2), characterized in that, prior to the irradiation of the laser light, a temporary support substrate coated with an adhesive is adhered to the surface of the epitaxial functional layer of the bonded wafer opposite the heterogeneous substrate. (U10) The system for peeling off a bonded wafer according to (U9), characterized in that the adhesive is silicone. (U11) A system for delaminating a bonded wafer according to (U1), characterized in that the temporary support substrate is made of any one of sapphire, SiC, synthetic quartz, quartz, glass, LiTaO3, and LiNbO3. (U12) A bonded wafer in which a rectangular device structure is bonded to a support via a hardened layer of a hardening bonding material, the bonded wafer being used to peel off the device structure by irradiation with laser light. (U13) The bonded wafer according to (U12), wherein the device structure is a red LED chip. (U14) A bonded wafer according to (U12), wherein the device structure portion contains an AlGaInP-based material. (U15) The bonded wafer according to (U12), wherein the cured layer has a thickness of 0.1 to 1.0 μm. (U16) The bonded wafer according to (U13), wherein the cured layer has a thickness of 0.1 to 1.0 μm. (U17) The bonded wafer according to (U12), wherein the cured layer has a thickness of 0.4 to 0.6 μm. (U18) The bonded wafer according to (U13), wherein the cured layer has a thickness of 0.4 to 0.6 μm. (U19) A bonded wafer according to (U12), wherein the device structure portion has an epitaxial functional layer from which a starting substrate for epitaxial growth has been removed. (U20) The bonded wafer according to (U12), wherein the curable bonding material includes at least one selected from the group consisting of benzocyclobutene, polyimide, fluororesin, epoxy resin, and silicone resin. (U21) The bonded wafer according to (U12), wherein the support has at least one selected from the group consisting of a sapphire substrate, a SiC substrate, a synthetic quartz substrate, a quartz substrate, a glass substrate, a LiTaO3 substrate, and a LiNbO3 substrate. (U22) The device structure is a red LED chip including an AlGaInP-based material, The thickness of the cured layer is 0.1 to 1.0 μm, The device structure has an epitaxial functional layer from which a starting substrate for epitaxial growth has been removed, The curable bonding material includes at least one selected from the group consisting of benzocyclobutene, polyimide, fluororesin, epoxy resin, and silicone resin, The bonded wafer according to (U12), wherein the support has at least one selected from the group consisting of a sapphire substrate, a SiC substrate, a synthetic quartz substrate, a quartz substrate, a glass substrate, a LiTaO3 substrate, and a LiNbO3 substrate. (U23) The device structure is a red LED chip including an AlGaInP-based material, The thickness of the cured layer is 0.4 to 0.6 μm, The device structure has an epitaxial functional layer from which a starting substrate for epitaxial growth has been removed, The curable bonding material contains benzocyclobutene, The bonded wafer according to claim 12, wherein the support has a sapphire substrate. (U24) A bonded wafer according to (U12), wherein a plurality of the device structures are bonded onto the support, and the plurality of device structures are arranged in a matrix. (U25) A bonded wafer separation system for separating a support from a bonded wafer in which a device structure is bonded to a support via a hardened layer of a hardening bonding material, comprising: A bonded wafer delamination system, comprising a mechanism for separating the device structure and the support by irradiating a laser beam oscillated from a laser oscillator from the support side of the bonded wafer. (U26) A bonded wafer separation system according to (U25), wherein the device structure is a red LED chip. (U27) A system for delaminating a bonded wafer according to (U25), wherein the device structure portion includes an AlGaInP-based material. (U28) The bonded wafer separation system according to (U25), wherein the hardened layer has a thickness of 0.1 to 1.0 μm. (U29) The bonded wafer separation system according to (U26), wherein the hardened layer has a thickness of 0.1 to 1.0 μm. (U30) The system for delaminating a bonded wafer according to (U25), wherein the cured layer has a thickness of 0.4 to 0.6 μm. (U31) The system for delaminating a bonded wafer according to (U26), wherein the hardened layer has a thickness of 0.4 to 0.6 μm. (U32) A system for separating bonded wafers according to (U25), wherein the device structure has an epitaxial functional layer from which a starting substrate for epitaxial growth has been removed. (U33) The bonded wafer delamination system according to (U25), wherein the curable bonding material includes at least one selected from the group consisting of benzocyclobutene, polyimide, fluororesin, epoxy resin, and silicone resin. (U34) A bonded wafer separation system according to (U25), wherein the support has at least one selected from the group consisting of a sapphire substrate, a SiC substrate, a synthetic quartz substrate, a quartz substrate, a glass substrate, a LiTaO3 substrate, and a LiNbO3 substrate. (U35) The device structure is a red LED chip including an AlGaInP-based material; The thickness of the cured layer is 0.1 to 1.0 μm, The device structure has an epitaxial functional layer from which a starting substrate for epitaxial growth has been removed, The curable bonding material includes at least one selected from the group consisting of benzocyclobutene, polyimide, fluororesin, epoxy resin, and silicone resin, The bonded wafer separation system according to (U25), wherein the support has at least one selected from the group consisting of a sapphire substrate, a SiC substrate, a synthetic quartz substrate, a quartz substrate, a glass substrate, a LiTaO3 substrate, and a LiNbO3 substrate. (U36) The device structure is a red LED chip including an AlGaInP-based material; The thickness of the cured layer is 0.4 to 0.6 μm, The device structure has an epitaxial functional layer from which a starting substrate for epitaxial growth has been removed, The curable bonding material contains benzocyclobutene, The bonded wafer separation system according to claim 25, wherein the support has a sapphire substrate. (U37) A system for separating a bonded wafer according to (U25), wherein the device structure is bonded onto the support in a plurality of parts, and the plurality of device structures are arranged in a matrix. (U38) A system for manufacturing a separated device structure, comprising: peeling off a support from a bonded wafer in which a device structure is bonded to a support via a hardened layer of a hardening bonding material, A manufacturing system for a separated device structure, comprising a mechanism for separating the device structure from the support by irradiating a laser beam oscillated from a laser oscillator from the support side of the bonded wafer. (U39) A system for manufacturing an isolated device structure according to (U38), wherein the device structure is a red LED chip. (U40) A system for manufacturing an isolated device structure according to (U38), wherein the device structure comprises an AlGaInP-based material. (U41) The system for producing an isolated device structure according to (U38), wherein the thickness of the cured layer is 0.1 to 1.0 μm. (U42) The system for producing an isolated device structure according to (U39), wherein the thickness of the cured layer is 0.1 to 1.0 μm. (U43) The system for producing an isolated device structure according to (U38), wherein the thickness of the cured layer is 0.4 to 0.6 μm. (U44) The system for producing an isolated device structure according to (U39), wherein the thickness of the cured layer is 0.4 to 0.6 μm. (U45) A manufacturing system for an isolated device structure described in (U38), wherein the device structure has an epitaxial functional layer from which a starting substrate for epitaxial growth has been removed. (U46) The system for manufacturing an isolated device structure according to (U38), wherein the curable bonding material includes at least one selected from the group consisting of benzocyclobutene, polyimide, fluororesin, epoxy resin and silicone resin. (U47) A system for manufacturing an isolated device structure described in (U38), wherein the support has at least one selected from the group consisting of a sapphire substrate, a SiC substrate, a synthetic quartz substrate, a quartz substrate, a glass substrate, a LiTaO3 substrate, and a LiNbO3 substrate. (U48) The device structure is a red LED chip including an AlGaInP-based material, The thickness of the cured layer is 0.1 to 1.0 μm, The device structure has an epitaxial functional layer from which a starting substrate for epitaxial growth has been removed, The curable bonding material includes at least one selected from the group consisting of benzocyclobutene, polyimide, fluororesin, epoxy resin, and silicone resin, The system for manufacturing an isolated device structure according to claim 38, wherein the support has at least one selected from the group consisting of a sapphire substrate, a SiC substrate, a synthetic quartz substrate, a quartz substrate, a glass substrate, a LiTaO3 substrate, and a LiNbO3 substrate. (U49) The device structure is a red LED chip including an AlGaInP-based material, The thickness of the cured layer is 0.4 to 0.6 μm, The device structure has an epitaxial functional layer from which a starting substrate for epitaxial growth has been removed, The curable bonding material contains benzocyclobutene, The system for manufacturing an isolated device structure as described in (U38), wherein the support has a sapphire substrate. (U50) A manufacturing system for an isolated device structure as described in (U38), in which a plurality of the device structures are bonded onto the support, and the plurality of device structures are arranged in a matrix. (U51) A bonded body in which a rectangular device structure is bonded to a support via a cured layer of a curable bonding material, the bonded body being used for peeling off the device structure by irradiation with laser light. (U52) The separated bonded body according to (U51), wherein the device structure is a red LED chip. (U53) The isolated junction according to (U51), wherein the device structure comprises an AlGaInP-based material. (U54) The separated bonded body according to (U51), wherein the cured layer has a thickness of 0.1 to 1.0 μm. (U55) The separated bonded body according to (U52), wherein the cured layer has a thickness of 0.1 to 1.0 μm. (U56) The separated bonded body according to (U51), wherein the cured layer has a thickness of 0.4 to 0.6 μm. (U57) The separated bonded body according to (U52), wherein the thickness of the cured layer is 0.4 to 0.6 μm. (U58) The separated junction according to (U51), wherein the device structure has an epitaxial functional layer from which a starting substrate for epitaxial growth has been removed. (U59) The separated bonded body according to (U51), wherein the curable bonding material includes at least one selected from the group consisting of benzocyclobutene, polyimide, fluororesin, epoxy resin, and silicone resin. (U60) The separated bonded body according to (U51), wherein the support has at least one selected from the group consisting of a sapphire substrate, a SiC substrate, a synthetic quartz substrate, a quartz substrate, a glass substrate, a LiTaO3 substrate, and a LiNbO3 substrate. (U61) The device structure is a red LED chip including an AlGaInP-based material; The thickness of the cured layer is 0.1 to 1.0 μm, The device structure has an epitaxial functional layer from which a starting substrate for epitaxial growth has been removed, The curable bonding material includes at least one selected from the group consisting of benzocyclobutene, polyimide, fluororesin, epoxy resin, and silicone resin, The separated bonded body according to (U51), wherein the support has at least one selected from the group consisting of a sapphire substrate, a SiC substrate, a synthetic quartz substrate, a quartz substrate, a glass substrate, a LiTaO3 substrate, and a LiNbO3 substrate. (U62) The device structure is a red LED chip including an AlGaInP-based material; The thickness of the cured layer is 0.4 to 0.6 μm, The device structure has an epitaxial functional layer from which a starting substrate for epitaxial growth has been removed, The curable bonding material contains benzocyclobutene, The isolated bonded structure according to claim 1, wherein the support has a sapphire substrate. (U63) The separated bonded body according to (U51), wherein a plurality of the device structures are bonded onto the support, and the plurality of device structures are arranged in a matrix. (U64) A system for peeling off a support from a bonded body in which a device structure is bonded to a support via a cured layer of a curable bonding material, comprising: A bonded body peeling system comprising a mechanism for separating the device structure and the support by irradiating a laser beam oscillated from a laser oscillator from the support side of the bonded body. (U65) The system for peeling off a bonded body according to (U64), wherein the device structure is a red LED chip. (U66) A bonded body separation system according to (U64), wherein the device structure portion includes an AlGaInP-based material. (U67) The bonded body peeling system according to (U64), wherein the thickness of the cured layer is 0.1 to 1.0 μm. (U68) The peeling system for a bonded body according to (U65), wherein the thickness of the cured layer is 0.1 to 1.0 μm. (U69) The peeling system for a bonded body according to (U64), wherein the thickness of the cured layer is 0.4 to 0.6 μm. (U70) The peeling system for a bonded body according to (U65), wherein the thickness of the cured layer is 0.4 to 0.6 μm. (U71) A system for delaminating a bonded body according to (U64), wherein the device structure has an epitaxial functional layer from which a starting substrate for epitaxial growth has been removed. (U72) A bonded body peeling system according to (U64), wherein the curable bonding material includes at least one selected from the group consisting of benzocyclobutene, polyimide, fluororesin, epoxy resin and silicone resin. (U73) A system for delaminating a bonded body according to (U64), wherein the support has at least one selected from the group consisting of a sapphire substrate, a SiC substrate, a synthetic quartz substrate, a quartz substrate, a glass substrate, a LiTaO3 substrate, and a LiNbO3 substrate. (U74) The device structure is a red LED chip including an AlGaInP-based material, The thickness of the cured layer is 0.1 to 1.0 μm, The device structure has an epitaxial functional layer from which a starting substrate for epitaxial growth has been removed, The curable bonding material includes at least one selected from the group consisting of benzocyclobutene, polyimide, fluororesin, epoxy resin, and silicone resin, The bonded body peeling system according to (U64), wherein the support has at least one selected from the group consisting of a sapphire substrate, a SiC substrate, a synthetic quartz substrate, a quartz substrate, a glass substrate, a LiTaO3 substrate, and a LiNbO3 substrate. (U75) The device structure is a red LED chip including an AlGaInP-based material; The thickness of the cured layer is 0.4 to 0.6 μm, The device structure has an epitaxial functional layer from which a starting substrate for epitaxial growth has been removed, The curable bonding material contains benzocyclobutene, The bonded body peeling system according to claim 64, wherein the support has a sapphire substrate. (U76) A system for peeling off a bonded body according to (U64), wherein a plurality of the device structures are bonded onto the support, and the plurality of device structures are arranged in a matrix. (U77) A system for manufacturing a separated device structure, comprising: peeling off a support from a bonded body in which a device structure is bonded to a support via a cured layer of a curable bonding material, A manufacturing system for a separated device structure, comprising a mechanism for separating the device structure and the support by irradiating a laser beam oscillated from a laser oscillator from the support side of the bonded body. (U78) The system for manufacturing an isolated device structure according to (U77), wherein the device structure is a red LED chip. (U79) A system for manufacturing an isolated device structure according to (U77), wherein the device structure comprises an AlGaInP-based material. (U80) The system for producing an isolated device structure according to (U77), wherein the cured layer has a thickness of 0.1 to 1.0 μm. (U81) The system for producing an isolated device structure according to (U78), wherein the thickness of the cured layer is 0.1 to 1.0 μm. (U82) The system for producing an isolated device structure according to (U77), wherein the thickness of the cured layer is 0.4 to 0.6 μm. (U83) The system for producing an isolated device structure according to (U78), wherein the thickness of the cured layer is 0.4 to 0.6 μm. (U84) A system for manufacturing an isolated device structure according to (U77), wherein the device structure has an epitaxial functional layer from which a starting substrate for epitaxial growth has been removed. (U85) The system for manufacturing an isolated device structure according to (U77), wherein the curable bonding material includes at least one selected from the group consisting of benzocyclobutene, polyimide, fluororesin, epoxy resin and silicone resin. (U86) The system for manufacturing an isolated device structure described in (U77), wherein the support has at least one selected from the group consisting of a sapphire substrate, a SiC substrate, a synthetic quartz substrate, a quartz substrate, a glass substrate, a LiTaO3 substrate, and a LiNbO3 substrate. (U87) The device structure is a red LED chip including an AlGaInP-based material, The thickness of the cured layer is 0.1 to 1.0 μm, The device structure has an epitaxial functional layer from which a starting substrate for epitaxial growth has been removed, The curable bonding material includes at least one selected from the group consisting of benzocyclobutene, polyimide, fluororesin, epoxy resin, and silicone resin, The system for manufacturing an isolated device structure according to (U77), wherein the support has at least one selected from the group consisting of a sapphire substrate, a SiC substrate, a synthetic quartz substrate, a quartz substrate, a glass substrate, a LiTaO3 substrate, and a LiNbO3 substrate. (U88) The device structure is a red LED chip including an AlGaInP-based material, The thickness of the cured layer is 0.4 to 0.6 μm, The device structure has an epitaxial functional layer from which a starting substrate for epitaxial growth has been removed, The curable bonding material contains benzocyclobutene, The system for manufacturing an isolated device structure as described in (U77), wherein the support has a sapphire substrate. (U89) A manufacturing system for an isolated device structure as described in (U77), in which a plurality of the device structures are bonded onto the support, and the plurality of device structures are arranged in a matrix. (X1) An application of a bonded wafer in which a device structure is bonded to a support to peeling off the device structure by irradiation with laser light, The device structure is bonded to the support via a cured layer of a curable bonding material. (X2) An application to the manufacture of a bonded wafer in which a device structure is bonded to a support, the device structure being peeled off by irradiation with laser light, The device structure is bonded to the support via a cured layer of a curable bonding material. (X3) An application of a bonded body in which a device structure is bonded to a support to peeling off the device structure by irradiation with laser light, The device structure is bonded to the support via a cured layer of a curable bonding material. (X4) An application of a bonded body in which a device structure is bonded to a support to the manufacture of a bonded body used in peeling off the device structure by irradiation with laser light, The device structure is bonded to the support via a cured layer of a curable bonding material.

[0102] Each of the constituent elements in many of the above-mentioned embodiments can be subdivided, and the subdivided constituent elements can be introduced into these (1) to (15), (U1) to (U88), and (X1) to (X4) individually or in combination. Representative examples include the materials, properties, dimensions, shapes, and formation methods of various substrates and layers, the type of laser light, the peeling method, and the structure of the device structure.

[0103] The present invention is not limited to the above-described embodiment. The above-described embodiment is merely an example, and anything that has substantially the same configuration as the technical idea described in the claims of the present invention and exhibits similar effects is included in the technical scope of the present invention.

Claims

1. A method for manufacturing an individualized device structure, comprising: a preparation step of preparing a starting substrate having an epitaxial functional layer formed on one surface thereof; a bonding step of bonding the epitaxial functional layer and the support with a curable bonding material; a removal step of removing the starting substrate so that the epitaxial functional layer remains on the support; a processing step of processing the epitaxial functional layer bonded on the support so as to be divided into a plurality of device structure parts; a separation step of separating the device structure from the support by irradiating the device structure from the support with laser light; 10. A method for manufacturing an individualized device structure, comprising:

2. A method for manufacturing an individualized device structure part as described in claim 1, wherein the individualized device structure part is adhered to a temporary support substrate on which an adhesive is formed.

3. A method for manufacturing an individualized device structure part as described in claim 1 or 2, wherein in the processing step, the epitaxial functional layer located between adjacent device structures is removed.

4. A method for manufacturing an individualized device structure part as described in Claim 3, wherein the epitaxial functional layer to be removed is removed by dry etching.

5. A method for manufacturing individualized device structure parts as described in claim 1 or 2, wherein, in the processing step, the processed multiple device structure parts are arranged in a matrix on the support.

6. A method for manufacturing an individualized device structure part as described in claim 1 or 2, wherein two or more electrodes of different polarities are formed in the processing step.

7. A method for manufacturing an individualized device structure part as described in Claim 6, wherein heating is performed in the processing step to obtain ohmic contact.

8. A method for manufacturing an individualized device structure part as described in claim 1 or 2, wherein in the removal process, the starting substrate is removed by wet etching.

9. A method for manufacturing an individualized device structure part as described in claim 1 or 2, wherein the starting substrate is a substrate that is opaque to the laser light.

10. A method for manufacturing individualized device structure parts according to claim 1 or 2, wherein the starting substrate is a gallium arsenide substrate.

11. A method for manufacturing an individualized device structure part according to claim 1 or 2, wherein the device structure part is a red LED.

12. A method for manufacturing individualized device structure parts as described in claim 1 or 2, wherein in the separation process, the surface of the device structure part is decomposed by irradiation with the laser light.

13. A method for manufacturing individualized device structural parts as described in claim 1 or 2, wherein in the separation process, the bonding layer made of the hardened bonding material is decomposed by irradiation with the laser light.

14. A method for manufacturing individualized device structural parts as described in Claim 12, wherein in the separation process, the bonding layer made of the hardened bonding material is decomposed by irradiation with the laser light.

15. 3. The method for manufacturing an individualized device structure according to claim 1, wherein the curable bonding material has any one of a thermosetting property, a UV curing property, and a room temperature curing property.

16. The method for manufacturing an individualized device structure according to claim 15, wherein the curable bonding material includes one of benzocyclobutene, polyimide, fluororesin, epoxy resin, and silicone resin.

17. The support may be made of sapphire, SiC, synthetic quartz, quartz, glass, or LiTaO ３ , LiNbO ３ 3. The method for producing an individualized device structure according to claim 1, wherein the material is any one of the following:

18. The temporary support substrate is made of sapphire, SiC, synthetic quartz, quartz, glass, LiTaO ３ , LiNbO ３ 3. The method for producing an individualized device structure according to claim 2, wherein the material is any one of the following:

19. The individualized device structure portion is adhered to a temporary support substrate on which an adhesive is formed, In the processing step, the epitaxial functional layer located between adjacent device structures is removed; In the processing step, the processed device structures are arranged in a matrix on the support, In the processing step, two or more electrodes having different polarities are formed, the starting substrate is a gallium arsenide substrate; the device structure is a red LED; In the separation step, the surface of the device structure and / or the bonding layer made of the curable bonding material is decomposed by the irradiation of the laser light, the curable bonding material includes one of benzocyclobutene, polyimide, fluororesin, epoxy resin, and silicone resin; the support is made of any one of sapphire, SiC, synthetic quartz, quartz, glass, LiTaO 3 , and LiNbO 3 ; 2. The method for producing an individualized device structure according to claim 1, wherein the temporary support substrate is made of any one of sapphire, SiC, synthetic quartz, quartz, glass, LiTaO3, and LiNbO3.

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