Photoelectric conversion device, and apparatus

Abstract

To provide a suitable arrangement of a contact connected to each of a transistor provided in a first semiconductor substrate and a transistor provided in a second semiconductor substrate.SOLUTION: A photoelectric conversion device includes: a first semiconductor substrate having a first surface and a second surface; a first photoelectric conversion unit; a second photoelectric conversion unit; an FD unit; a first component having a first transfer gate that transfers a signal charge generated in the first photoelectric conversion unit to the FD unit and a second transfer gate that transfers a signal charge generated in the second photoelectric conversion unit to the FD unit; a second semiconductor substrate including a third surface and a fourth surface; and a second component having a band-shaped insulator filling a penetration hole provided in the second semiconductor substrate and stacked on the first component. The insulator has a first contact connected to the first transfer gate, and a second contact connected to the second transfer gate. A direction where the first contact and the second contact are aligned and a longitudinal direction of the insulator form an acute angle.SELECTED DRAWING: Figure 7

Description

[Technical field]

[0001] The present invention relates to a photoelectric conversion device and an instrument. [Background technology]

[0002] In order to achieve a higher density of pixels in a photoelectric conversion device, Patent Document 1 describes providing a photoelectric conversion unit that the pixel has on a first semiconductor substrate, providing a pixel circuit that the pixel has on a second semiconductor substrate, and stacking the first semiconductor substrate and the second semiconductor substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2019 / 130702 Brochure Summary of the Invention [Problem to be solved by the invention]

[0004] In the technology described in Patent Document 1, no consideration is given to the specific arrangement of the contact connected to the gate of the transistor provided on the first semiconductor substrate and the contact connected to the gate of the transistor provided on the second semiconductor substrate. The present invention relates to providing an appropriate arrangement of the contacts connected to the transistor provided on the first semiconductor substrate and the contact connected to the transistor provided on the second semiconductor substrate. [Means for solving the problem]

[0005] One aspect of the present disclosure is a photoelectric conversion device including a first semiconductor substrate having a first surface and a second surface opposite to the first surface, a first photoelectric conversion unit receiving light from the second surface, a second photoelectric conversion unit receiving light from the second surface, a floating diffusion unit, a first transfer gate provided on the side of the first surface for transferring signal charges generated in the first photoelectric conversion unit to the floating diffusion unit, and a second transfer gate provided on the side of the first surface for transferring signal charges generated in the second photoelectric conversion unit to the floating diffusion unit. the first component having a second transfer gate that transmits a signal to the first transfer gate, a second semiconductor substrate having a third surface and a fourth surface opposite to the third surface, and a strip-shaped insulator filled in a through hole provided in the second semiconductor substrate, the second component being stacked on the first component, the insulator having a first contact connected to the first transfer gate and a second contact connected to the second transfer gate, and an acute angle formed between the direction in which the first contact and the second contact are arranged and the longitudinal direction of the insulator.

[0006] Another aspect of the present disclosure is a photoelectric conversion device including a first semiconductor substrate having a first surface and a second surface opposite to the first surface, a first photoelectric conversion unit receiving light from the second surface, a second photoelectric conversion unit receiving light from the second surface, a first transfer gate provided on the side of the first surface and transferring a signal charge generated in the first photoelectric conversion unit, a second transfer gate provided on the side of the first surface and transferring a signal charge generated in the second photoelectric conversion unit, and a floating diffuser to which the signal charge is transferred via the first transfer gate and the second transfer gate. the first component having a fusion portion, a second semiconductor substrate having a third surface and a fourth surface opposite to the third surface, and an insulator filled in a through hole provided in the second semiconductor substrate, the second component being stacked on the first component, the insulator having a first contact connected to the first transfer gate and a second contact connected to the second transfer gate, and an acute angle is formed between a direction in which the first contact and the second contact are aligned and a direction in which the first photoelectric conversion unit and the second photoelectric conversion unit are aligned.

[0007] Yet another aspect of the present disclosure is a photoelectric conversion device including a first semiconductor substrate having a first surface and a second surface opposite to the first surface, a first photoelectric conversion unit receiving light from the second surface, a second photoelectric conversion unit receiving light from the second surface, a first transfer gate provided on the side of the first surface and transferring a signal charge generated in the first photoelectric conversion unit, a second transfer gate provided on the side of the first surface and transferring a signal charge generated in the second photoelectric conversion unit, and a floating diffusion layer to which the signal charge is transferred via the first transfer gate and the second transfer gate. the second component having a first contact connected to the first transfer gate and a second contact connected to the second transfer gate, the second component being stacked on the first component, the second component having a first surface and a fourth surface opposite to the third surface, a second semiconductor substrate having a third surface and a fourth surface facing the third surface, and a plurality of strip-shaped insulators penetrating the second semiconductor substrate, the second component being stacked on the first component, the insulators filling through holes provided in the second semiconductor substrate, the second component having a first contact connected to the first transfer gate and a second contact connected to the second transfer gate, the first transfer gate and the second transfer gate being axisymmetrical with respect to the longitudinal direction of the insulator in a plan view. Effect of the Invention

[0008] The contacts connected to the transistors provided on the first semiconductor substrate and the contacts connected to the transistors provided on the second semiconductor substrate can be appropriately arranged. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic diagram illustrating a configuration of a photoelectric conversion device. [Diagram 2] FIG. 2 is a diagram showing the configuration of a sensor unit and a readout circuit. [Diagram 3] 1 is a cross-sectional view of a photoelectric conversion device according to a first embodiment. [Figure 4] 1 is a cross-sectional view of a photoelectric conversion device according to a first embodiment. [Diagram 5] FIG. 2 is a plan view of a comparative example of the photoelectric conversion device according to the first embodiment. [Figure 6]FIG. 4 is a plan view of a comparative example of the photoelectric conversion device according to the first embodiment. [Figure 7] 1 is a plan view of a photoelectric conversion device according to a first embodiment. [Figure 8] 1 is a cross-sectional view of a photoelectric conversion device according to a first embodiment. [Figure 9] FIG. 4 is a plan view of a photoelectric conversion device according to a second embodiment. [Figure 10] FIG. 11 is a plan view of a photoelectric conversion device according to a third embodiment. [Figure 11] FIG. 11 is a plan view of a photoelectric conversion device according to a fourth embodiment. [Figure 12] FIG. 13 is a plan view of a photoelectric conversion device according to a fifth embodiment. [Figure 13] FIG. 13 is a functional block diagram of a photoelectric conversion system according to a sixth embodiment. [Figure 14] FIG. 13 is a functional block diagram of a photoelectric conversion system according to a seventh embodiment. [Figure 15] FIG. 13 is a functional block diagram of a photoelectric conversion system according to an eighth embodiment. [Figure 16] FIG. 13 is a functional block diagram of a photoelectric conversion system according to a ninth embodiment. [Figure 17] FIG. 23 is a functional block diagram of a photoelectric conversion system according to a tenth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Each embodiment will be described below with reference to the drawings.

[0011] In the following embodiments, an image pickup device will be mainly described as an example of a photoelectric conversion device. However, each embodiment is not limited to an image pickup device, and can be applied to other examples of photoelectric conversion devices. For example, a distance measuring device (a device for measuring distance using focus detection or TOF (Time Of Flight)) or a photometric device (a device for measuring the amount of incident light) may be used.

[0012] In addition, the conductivity types of the semiconductor regions and wells and the dopants to be implanted described in the following embodiments are merely examples and are not limited to the conductivity types and dopants described in the embodiments. The conductivity types and dopants described in the embodiments can be changed as appropriate, and the potentials of the semiconductor regions and wells are changed as appropriate in accordance with this change.

[0013] The conductivity types of the transistors described in the following embodiments are merely examples and are not limited to those described in the examples. The conductivity types described in the embodiments can be changed as appropriate, and the potentials of the gate, source, and drain of the transistors are changed as appropriate.

[0014] For example, in the case of a transistor operated as a switch, the low and high levels of the potential supplied to the gate may be reversed in accordance with the change in the conductivity type, as compared to the description in the embodiment. The conductivity type of the semiconductor region described in the embodiment described below is also merely an example, and is not limited to the conductivity type described in the embodiment. The conductivity type may be changed as appropriate from the conductivity type described in the embodiment, and the potential of the semiconductor region may be changed as appropriate in accordance with this change.

[0015] In the following embodiments, the connection between elements of a circuit may be described. In this case, even if another element is interposed between the elements of interest, the elements of interest are treated as being connected to each other unless otherwise specified. For example, assume that element A is connected to one node of a capacitive element C having multiple nodes, and element B is connected to the other node. Even in such a case, element A and element B are treated as being connected to each other unless otherwise specified.

[0016] Metallic members such as wiring and pads described in this specification may be composed of a single metal element or may be a mixture (alloy). For example, wiring described as copper wiring may be composed of a single copper element or may be composed mainly of copper and further contain other components. Also, for example, a pad connected to an external terminal may be composed of a single aluminum element or may be composed mainly of aluminum and further contain other components. The copper wiring and aluminum pads shown here are examples and can be changed to various metals. Also, the wiring and pads shown here are examples of metallic members used in photoelectric conversion devices and can be applied to other metallic members.

[0017] (First embodiment) Hereinafter, an embodiment will be described with reference to the drawings.

[0018] 1 illustrates an example of a schematic configuration of an imaging device 1 (an example of the above-mentioned photoelectric conversion device) according to an embodiment of the present disclosure. The imaging device 1 includes three substrates (semiconductor substrate 14, semiconductor substrate 21, and semiconductor substrate 31). The imaging device 1 is an imaging device having a three-dimensional structure configured by bonding together three components (a first component 100, a second component 200, and a third component 300). The first component 100, the second component 200, and the third component 300 are stacked in this order.

[0019] The first component 100 has a plurality of sensor units 12 that perform photoelectric conversion. The semiconductor substrate 14 corresponds to a specific example of a "first semiconductor substrate" in the present disclosure. The plurality of sensor units 12 are provided in a matrix in a pixel region 13 of the first component 100.

[0020] The second component 200 has, on a semiconductor substrate 21, one readout circuit 22 for each of the four sensor units 12, which outputs pixel signals based on the charges output from the sensor units 12. The semiconductor substrate 21 corresponds to a specific example of a "second semiconductor substrate" in the present disclosure. The second component 200 has a plurality of pixel drive lines 24 extending in the row direction and a plurality of pixel output lines 25 extending in the column direction.

[0021] The third component 300 has a logic circuit 32 that processes pixel signals on a semiconductor substrate 31. The semiconductor substrate 31 corresponds to a specific example of a "third semiconductor substrate" in the present disclosure.

[0022] The logic circuit 32 includes, for example, a vertical scanning circuit 42, a column signal processing circuit 34, a horizontal scanning circuit 35, and a control circuit 36. The logic circuit 32 (specifically, the horizontal scanning circuit 35) outputs an output voltage Vout for each sensor unit 12 to the outside. In the logic circuit 32, for example, a low resistance region may be formed on the surface of the impurity diffusion region in contact with the source electrode and the drain electrode. This low resistance region is made of silicide formed by using a salicide (Self Aligned Silicide) process such as CoSi2 or NiSi.

[0023] The vertical scanning circuit 42, for example, sequentially selects the plurality of sensor units 12 on a row-by-row basis. The column signal processing circuit 34, for example, performs correlated double sampling (CDS) processing on pixel signals output from each sensor unit 12 in the row selected by the vertical scanning circuit 42. The column signal processing circuit 34, for example, performs CDS processing to extract signal levels of pixel signals and holds pixel data according to the amount of light received by each sensor unit 12. The horizontal scanning circuit 35, for example, sequentially outputs the pixel data held in the column signal processing circuit 34 to the outside. The control circuit 36, for example, controls the driving of each block (the vertical scanning circuit 42, the column signal processing circuit 34, and the horizontal scanning circuit 35) in the logic circuit 32.

[0024] The vertical scanning circuit 42, for example, sequentially selects the plurality of sensor units 12 in row units. The column signal processing circuit 34, for example, performs correlated double sampling (CDS) processing on pixel signals output from each sensor unit 12 in the row selected by the vertical scanning circuit 42. The column signal processing circuit 34, for example, performs CDS processing to extract a signal level of the pixel signal and holds pixel data according to the amount of light received by each sensor unit 12. The column signal processing circuit 34 may also have an AD conversion unit that converts a signal (analog signal) output by the amplification transistor AMP into a digital signal. The horizontal scanning circuit 35, for example, sequentially outputs the pixel data held in the column signal processing circuit 34 to the outside. The control circuit 36, for example, controls the driving of each block (the vertical scanning circuit 42, the column signal processing circuit 34, and the horizontal scanning circuit 35) in the logic circuit 32.

[0025] FIG. 2 shows an example of the configuration of the sensor unit 12. It shows an example of the sensor unit 12 and the readout circuit 22. In the following, a case where four sensor units 12_a to 12_d share one readout circuit 22 as shown in FIG. 2 will be described. Here, "shared" refers to the outputs of the four sensor units 12_a to 12_d being input to a common readout circuit 22. In the following, when describing matters common to the sensor units 12_a to 12_d, they will be collectively referred to as the sensor unit 12. The same applies to components other than the sensor units.

[0026] Each sensor unit 12 has components in common with each other. Each sensor unit 12 has, for example, a photodiode PD, a transfer transistor TR electrically connected to the photodiode PD, and a first FD node FD1 which is a part of a floating diffusion (FD). The photodiode and each member of the transfer gate in each sensor unit 12 (sensor units 12_a to 12_d) are designated by the suffixes a to d. The readout circuit 22 has a second FD node FD2 which is another part of the floating diffusion FD that temporarily holds the charge output from the photodiode PD via the transfer transistor TR. The four first FD nodes FD1_a to FD_d are connected to one second FD node FD2. The second FD node FD2 is an input node of the amplification transistor AMP.

[0027] The photodiode PD corresponds to a specific example of the "photoelectric conversion unit" of the present disclosure, with PD_a corresponding to the "first photoelectric conversion unit" and PD_b corresponding to the "second photoelectric conversion unit." The photodiode PD performs photoelectric conversion to generate charges according to the amount of received light. The cathode of the photodiode PD is electrically connected to the source of the transfer transistor TR, and the anode of the photodiode PD is given a potential given to the well region. That is, it is electrically connected to a reference potential line (for example, a ground potential). The photodiode PD is also provided inside the well region connected to this reference potential line. The drain of the transfer transistor TR is electrically connected to the floating diffusion FD, and the gate of the transfer transistor TR is electrically connected to the pixel drive line 24. The transfer transistor TR is, for example, a CMOS (Complementary Metal Oxide Semiconductor) transistor.

[0028] The floating diffusions FD of the sensor units 12 sharing one readout circuit 22 are electrically connected to each other and to an input terminal of the common readout circuit 22. The readout circuit 22 has, for example, a reset transistor RES, a selection transistor SEL, and an amplification transistor AMP. The selection transistor SEL may be omitted as necessary. The source of the reset transistor RES (the input terminal of the readout circuit 22) is electrically connected to the floating diffusion FD. The drain of the reset transistor RES is electrically connected to a power supply line (SVDD) and the drain of the amplification transistor AMP. The gate of the reset transistor RES is electrically connected to a pixel drive line 24 (see FIG. 1). The source of the amplification transistor AMP is electrically connected to the drain of the selection transistor SEL, and the gate of the amplification transistor AMP is electrically connected to the source of the reset transistor RES. The source of the selection transistor SEL (the output terminal of the readout circuit 22) is electrically connected to a pixel output line 25, and the gate of the selection transistor SEL is electrically connected to the pixel drive line 24 (see FIG. 1).

[0029] When the transfer transistor TR is turned on, the transfer transistor TR transfers the charge of the photodiode PD to the floating diffusion FD. The reset transistor RES resets the potential of the floating diffusion FD to a predetermined potential. When the reset transistor RES is turned on, the potential of the floating diffusion FD is reset to the potential of the power supply line (SVDD). The selection transistor SEL controls the output timing of the pixel signal from the readout circuit 22. The amplification transistor AMP generates a signal having a voltage corresponding to the level of the charge held in the floating diffusion FD as the pixel signal. The amplification transistor AMP constitutes a source follower type amplifier and outputs a pixel signal having a voltage corresponding to the level of the charge generated in the photodiode PD. When the selection transistor SEL is turned on, the amplification transistor AMP amplifies the potential of the floating diffusion FD and outputs a voltage corresponding to the potential to the column signal processing circuit 34 via the pixel output line 25. The reset transistor RES, the amplification transistor AMP, and the selection transistor SEL are, for example, CMOS transistors.

[0030] The reset transistor RES may be provided between the power supply line (SVDD) and the amplification transistor AMP. In this case, the drain of the reset transistor RES is electrically connected to the power supply line (SVDD) and the drain of the selection transistor SEL. The source of the selection transistor SEL is electrically connected to the drain of the amplification transistor AMP, and the gate of the selection transistor SEL is electrically connected to the pixel drive line 24 (see FIG. 1). The source of the amplification transistor AMP (the output terminal of the readout circuit 22) is electrically connected to the pixel output line 25, and the gate of the amplification transistor AMP is electrically connected to the source of the reset transistor RES. In addition, a transistor for changing the capacitance value of FD may be further provided in the electrical path between the reset transistor RES and the second FD node FD2.

[0031] FIG. 3 is a cross-sectional view of the photoelectric conversion device of this embodiment. This cross-sectional view shows a cross section of a line passing through the gates of the photodiode PD and the transfer transistor TR in the first component 100, the second component 200, and the third component 300. The semiconductor region 101 is the photodiode PD. That is, the semiconductor region 101 is a photoelectric conversion region that generates and accumulates signal charges (electrons in this embodiment) in response to incident light. In addition, the semiconductor region 101 is an N-type impurity region. FIG. 2 shows a configuration in which four sensor units 12 are connected to one amplification transistor AMP. The cross-sectional view of FIG. 3 shows two sensor units 12 that appear in one cross section out of the four sensor units 12.

[0032] The transfer gate 111 of the transfer transistor TR controls conduction between the semiconductor region 101 and a semiconductor region 121 (first semiconductor region) which is a first FD node FD1. The semiconductor region 121 is an N-type semiconductor region. The pixel separation section 201 is provided between a plurality of semiconductor regions 101 and electrically separates the plurality of semiconductor regions 101. The pixel separation section 201 may be configured to include an insulating section such as silicon oxide, or may be a semiconductor region which forms a potential barrier. Typically, the pixel separation section 201 is a semiconductor region in which charges of the opposite polarity to the signal charges accumulated by the photodiode PD are the main carriers. A pixel separation layer 211 is provided between the pixel separation section 201 and the semiconductor region 101. The pixel separation layer 211 plays a role in reducing dark current, particularly when the pixel separation section 201 is provided as an insulating section.

[0033] The semiconductor region 121, which is the first FD node FD1, and the gate 141 of the amplification transistor AMP are connected via a conductor 205. The conductor 205 is mainly composed of a metal such as tungsten or copper. The conductor 205 is formed penetrating an insulator 251 that separates the semiconductor substrate 21. The insulator 251 electrically separates the multiple readout circuits 22 from one another. The insulator 251 is also provided penetrating from the third face F3 to the fourth face F4 of the semiconductor substrate 21. In other words, the insulator 251 fills a through hole provided in the semiconductor substrate 21.

[0034] The semiconductor substrate 14 has a first face F1 on the incident surface side, and a second face F2 facing the first face. The semiconductor region 221 is a P-type semiconductor region provided in a region on the first face F1 side (incident surface side) of the semiconductor region 101. The fixed charge film 231 is provided on the first face F1 of the semiconductor substrate 14. The semiconductor region 221 and the fixed charge film 231 reduce dark current entering the semiconductor region 101.

[0035] The microlens ML guides light to the semiconductor region 101. A planarization layer 241 is provided between the microlens ML and the fixed charge film 231. Note that a color filter may be further provided on each of the multiple sensor units 12 to perform color separation.

[0036] The first component 100, the second component 200, and the third component 300 are stacked. The second component 200 is provided between the first component 100 and the third component 300. A transistor 301 is provided on a semiconductor substrate 31 of the third component 300. The second component 200 and the third component 300 are electrically connected via a connection portion 311. The connection portion 311 is formed of a metal. Typically, the connection portion 311 mainly contains copper. The connection portion 311 is also formed so as to further contain a barrier metal (titanium, nickel, etc.) for suppressing the diffusion of copper. At the joint surface where the connection portion 311 is formed, insulators surrounding the periphery of the connection portion 311 are joined to each other.

[0037] In this embodiment, the four photodiodes PD share one second FD node FD2, but the present invention is not limited to this. In other words, more photodiodes PD may share one second FD node FD2.

[0038] Also, as shown in Fig. 4, one photodiode PD may be connected to one second FD node FD2. In the configuration shown in Fig. 6, only one photodiode PD is connected to the gate 141 of the amplification transistor AMP, which is one second FD node FD2. In Fig. 4, the same reference numerals as those of the components having the same functions as those shown in Fig. 3 are used for the components, and the description thereof will be omitted.

[0039] Fig. 5 shows a comparative example of plan views of the first component and the second component. A plan view of the first component 100 shown in Fig. 3 viewed from the second component 200 side and a plan view of the second component 200 viewed from the third component 300 side are shown together when a contact arrangement shown as a comparative example is implemented in the photoelectric conversion device shown in Figs. 2 to 4.

[0040] Polysilicon 207 corresponding to the gate of the transfer transistor TR is provided on the second surface F2 of the first component 100. A contact 206 is connected to the polysilicon 207. A strip-shaped insulator 251 is disposed in the second component, which is provided continuously across a plurality of pixels, and the contact 206 is connected to the second component 200 by a conductor penetrating the insulator 251. A contact 208 connected to the second FD node FD2 is also connected to the second component 200 by a conductor 205 penetrating the insulator 251.

[0041] Here, in order to prevent conduction between the contacts and propagation of potential changes, it is necessary to provide a sufficient distance between the contacts. If the contacts are arranged apart to ensure space between the contacts, the width (length in the short direction) of the insulator 251 in the second component 200 will be increased, and the area on the second component 200 in which pixel transistors can be arranged will be reduced.

[0042] FIG. 6 is another comparative example of plan views of the first component 100 and the second component 200. This shows a plan view of the first component 100 and the second component 200 in the case where the contacts are arranged in a straight line so that the width of the insulator 251 does not become wider as in the comparative example shown in FIG. 5. In this arrangement, the width of the insulator 251 can be narrower than in the case shown in FIG. 5, but the symmetry of the polysilicon 207 that constitutes the gate decreases. This is because the shapes of the transfer transistors TR connected to each of the four photodiodes are different. The decrease in symmetry of the polysilicon leads to a decrease in the symmetry of the transistor performance.

[0043] 7 is a plan view of the first component 100 and the second component 200 according to this embodiment. In this embodiment, the contacts are arranged diagonally with respect to the longitudinal direction of the insulator 251 arranged in a strip shape. In other words, the direction in which the first contacts and the second contacts among the multiple contacts arranged on the second component 200 are arranged intersects with the longitudinal direction of the insulator 251 at an acute angle. In other words, the direction in which the first contacts and the second contacts are arranged intersects with the longitudinal direction of the insulator 251 but is not perpendicular thereto.

[0044] In such an arrangement, the width (length in the short direction) of the insulator 251 can be narrowed, and the distance between the contacts can be secured while maintaining the symmetry of the polysilicon shape.

[0045] 8 is a cross-sectional view of a portion of the first component 100 and the second component 200. A gate insulating film is provided between the second face F2 of the semiconductor substrate 14 and the transfer gate 111. The semiconductor substrate 21 has a third face F3 and a fourth face F4 facing the third face F3. A gate insulating film is also provided between the third face F3 of the semiconductor substrate 21 and the gate 141 of the amplification transistor AMP. A gate insulating film is also provided between the third face F3 of the semiconductor substrate 21 and the gate of the reset transistor RES. A gate insulating film is also provided between the third face F3 of the semiconductor substrate 21 and the gate of the selection transistor SEL.

[0046] Each of the gate insulating films is typically a film containing mainly silicon and oxygen, or a film containing mainly silicon and nitrogen, that is, each of the gate insulating films can be a silicon oxide film, a silicon oxynitride film, or a silicon nitride film.

[0047] Second embodiment The present embodiment will be described focusing on the differences from the first embodiment. In the present embodiment, the arrangement positions of the contacts on the polysilicon are different from those in the first embodiment.

[0048] Fig. 9 is a plan view of the first component and the second component according to this embodiment. In the arrangement shown in Fig. 8, the polysilicon is arranged such that the contacts arranged at a fixed position on each polysilicon are oblique to the insulator 251. In the arrangement shown in Fig. 9, contacts are arranged on the polysilicon arranged at a fixed position for each of the photoelectric conversion units sharing the FD, so as to be oblique to the insulator 251. In other words, the polysilicon is arranged point-symmetrically in the arrangement shown in Fig. 8, but the polysilicon is arranged line-symmetrically in the arrangement shown in Fig. 9.

[0049] By adopting such a configuration, it is expected that the effect of reducing the influence of the alignment variation can be expected. In the configuration shown in the first embodiment, the influence of the alignment variation in a certain direction affects all four polysilicon constituting the four transfer transistors TR sharing the FD. On the other hand, in the configuration shown in the present embodiment, the influence of the alignment deviation affects two of the polysilicon constituting the four transfer transistors TR sharing the FD.

[0050] For example, if the polysilicon is misaligned in the vertical direction due to misalignment, the characteristics of the polysilicon arranged on the left and right sides are aligned in the arrangement of the contacts and polysilicon according to this embodiment. When distance measurement is performed using multiple photoelectric conversion devices that share an FD, the effect of strengthening the distance measurement characteristics against alignment variations is achieved.

[0051] (Third embodiment) The present embodiment will be described focusing on the differences from the first and second embodiments. In this embodiment, contacts of pixels sharing one FD are arranged on a plurality of insulators 251.

[0052] 10 is a plan view of the first and second components according to this embodiment. Two strip-shaped insulators 251 are arranged for four PDs sharing one FD, and two contacts are connected to each insulator 251. The two contacts arranged in each insulator 251 are arranged diagonally with respect to the longitudinal direction of the insulator 251. Even with this arrangement, the variation in transfer characteristics between pixels can be reduced by ensuring the distance between the contacts and aligning the polysilicon shape.

[0053] (Fourth embodiment) The photoelectric conversion device of this embodiment will be described focusing on the differences from the first embodiment. In this embodiment, the contacts are arranged on the insulator 251 such that the arrangement direction of the contacts is oblique to the arrangement direction of the pixel array.

[0054] Fig. 11 is a plan view of the first component and the second component according to this embodiment. The second component shown in Fig. 11 is provided with a rectangular insulator 251. The shape of the insulator 251 is not limited to a rectangle, and may be a polygon or a lattice shape. Furthermore, the number of contacts arranged on each insulator 251 is not limited to the number shown in the figure.

[0055] In this embodiment, the contacts are arranged on the insulator 251 at an angle to the arrangement direction of the pixels of the pixel array. With this configuration, it is possible to ensure the distance between the contacts while making the insulator 251 narrower than when the insulator 251 is formed in a strip shape.

[0056] Fifth embodiment The photoelectric conversion device of this embodiment will be described focusing on the differences from the first embodiment. In this embodiment, a contact arrangement in the case where the photoelectric conversion device has pixels for distance measurement that share a microlens is described.

[0057] FIG. 12 shows a plan view of the first and second components according to this embodiment. The photoelectric conversion device shown in this embodiment has a pixel for distance measurement. The pixel for distance measurement has a structure in which a photoelectric conversion unit divided into multiple parts shares a microlens. The division direction of the photoelectric conversion unit does not need to be constant, and the configuration shown in FIG. 11 has a first pixel having a photoelectric conversion unit divided in a first direction, and a second pixel having a photoelectric conversion unit divided in a second direction whose division direction is 90 degrees different. By providing pixels for distance measurement whose photoelectric conversion units are divided in different directions, distance measurement performance can be maintained even when the subject moves in the same direction as the division direction of the photoelectric conversion unit of a certain pixel.

[0058] In Figure 11, in pixels with different division directions of the photoelectric conversion unit, the contacts are arranged diagonally to the division direction of the photoelectric conversion unit. In this arrangement, the contact arrangement is the same regardless of the division direction of the photoelectric conversion unit. By sharing the polysilicon of the transfer transistor between two pixels and rotating it by 90 degrees according to the division direction of the photoelectric conversion unit, the photoelectric conversion unit divided vertically and the photoelectric conversion unit divided horizontally can be used separately. Therefore, the contacts can be easily formed in the process, and the variation in transfer characteristics between pixels can be reduced.

[0059] Sixth embodiment The photoelectric conversion system according to this embodiment will be described with reference to Fig. 13. Fig. 13 is a block diagram showing a schematic configuration of the photoelectric conversion system according to this embodiment.

[0060] The photoelectric conversion devices described in the first to fifth embodiments are applicable to various photoelectric conversion systems. Examples of the applicable photoelectric conversion systems include digital still cameras, digital camcorders, security cameras, copiers, fax machines, mobile phones, car-mounted cameras, and observation satellites. Camera modules equipped with an optical system such as a lens and an imaging device are also included in the photoelectric conversion systems. FIG. 13 illustrates a block diagram of a digital still camera as an example of these.

[0061] 13 includes an image pickup device 1004, which is an example of a photoelectric conversion device, and a lens 1002 that forms an optical image of a subject on the image pickup device 1004. The system further includes an aperture 1003 that varies the amount of light passing through the lens 1002, and a barrier 1001 that protects the lens 1002. The lens 1002 and the aperture 1003 form an optical system that focuses light on the image pickup device 1004. The image pickup device 1004 is a photoelectric conversion device according to any one of the above embodiments, and converts the optical image formed by the lens 1002 into an electrical signal.

[0062] The photoelectric conversion system also has a signal processing unit 1007 which is an image generating unit that generates an image by processing an output signal output from the imaging device 1004. The signal processing unit 1007 performs various corrections and compression as necessary to output image data. The signal processing unit 1007 may be formed on the semiconductor substrate on which the imaging device 1004 is provided, or may be formed on a semiconductor substrate separate from the imaging device 1004.

[0063] The photoelectric conversion system further includes a memory unit 1010 for temporarily storing image data, and an external interface unit (external I / F unit) 1013 for communicating with an external computer or the like. The photoelectric conversion system further includes a recording medium 1012 such as a semiconductor memory for recording or reading out imaging data, and a recording medium control interface unit (recording medium control I / F unit) 1011 for recording or reading out data on the recording medium 1012. The recording medium 1012 may be built into the photoelectric conversion system, or may be removable.

[0064] The photoelectric conversion system further includes an overall control / calculation unit 1009 that performs various calculations and controls the entire digital still camera, and a timing generation unit 1008 that outputs various timing signals to the image capture device 1004 and the signal processing unit 1007. Here, the timing signals and the like may be input from outside, and the photoelectric conversion system only needs to include at least the image capture device 1004 and the signal processing unit 1007 that processes the output signal output from the image capture device 1004.

[0065] The imaging device 1004 outputs an imaging signal to a signal processing unit 1007. The signal processing unit 1007 performs predetermined signal processing on the imaging signal output from the imaging device 1004, and outputs image data. The signal processing unit 1007 generates an image using the imaging signal.

[0066] In this way, according to this embodiment, it is possible to realize a photoelectric conversion system to which the photoelectric conversion device (imaging device) according to any one of the above embodiments is applied.

[0067] Seventh embodiment The photoelectric conversion system and the moving object of this embodiment will be described with reference to Fig. 14. Fig. 14 is a diagram showing the configuration of the photoelectric conversion system and the moving object of this embodiment.

[0068] FIG. 14(a) shows an example of a photoelectric conversion system related to an in-vehicle camera. The photoelectric conversion system 2300 has an imaging device 2310. The imaging device 2310 is the photoelectric conversion device described in any of the above embodiments. The photoelectric conversion system 2300 has an image processing unit 2312 that performs image processing on a plurality of image data acquired by the imaging device 2310, and a parallax acquisition unit 2314 that calculates parallax (phase difference of parallax images) from the plurality of image data acquired by the photoelectric conversion system 2300. The photoelectric conversion system 2300 also has a distance acquisition unit 2316 that calculates a distance to an object based on the calculated parallax, and a collision determination unit 2318 that determines whether or not there is a possibility of collision based on the calculated distance. Here, the parallax acquisition unit 2314 and the distance acquisition unit 2316 are examples of distance information acquisition means that acquire distance information to an object. That is, the distance information is information on the parallax, the defocus amount, the distance to the object, and the like. The collision determination unit 2318 may determine the possibility of a collision using any of these pieces of distance information. The distance information acquisition means may be realized by dedicated hardware, or may be realized by a software module. In addition, it may be realized by a field programmable gate array (FPGA), an application specific integrated circuit (ASIC), or the like, or may be realized by a combination of these.

[0069] The photoelectric conversion system 2300 is connected to a vehicle information acquisition device 2320, and can acquire vehicle information such as vehicle speed, yaw rate, and steering angle. The photoelectric conversion system 2300 is also connected to a control ECU 2330, which is a control unit that outputs a control signal to generate a braking force for the vehicle based on the judgment result of the collision judgment unit 2318. The photoelectric conversion system 2300 is also connected to an alarm device 2340 that issues an alarm to the driver based on the judgment result of the collision judgment unit 2318. For example, when the judgment result of the collision judgment unit 2318 indicates that there is a high possibility of a collision, the control ECU 2330 performs vehicle control to avoid a collision and reduce damage by applying the brakes, releasing the accelerator, suppressing engine output, etc. The alarm device 2340 warns the user by sounding an alarm, displaying alarm information on the screen of a car navigation system, etc., or vibrating the seat belt or steering wheel.

[0070] In this embodiment, the surroundings of the vehicle, for example, the front or rear, are imaged by the photoelectric conversion system 2300. Fig. 14(b) shows a photoelectric conversion system for imaging the area in front of the vehicle (imaging range 2350). A vehicle information acquisition device 2320 sends instructions to the photoelectric conversion system 2300 or the imaging device 2310. This configuration can further improve the accuracy of distance measurement.

[0071] Although the above describes an example of control to prevent collision with other vehicles, the present invention can also be applied to control of automatic driving by following other vehicles, control of automatic driving to prevent deviation from lanes, etc. Furthermore, the photoelectric conversion system is not limited to vehicles such as automobiles, but can be applied to moving bodies (moving devices) such as ships, aircraft, and industrial robots. In addition, the present invention can be applied not only to moving bodies, but also to a wide range of devices that use object recognition, such as intelligent transport systems (ITS).

[0072] Eighth embodiment The photoelectric conversion system of this embodiment will be described with reference to Fig. 15. Fig. 15 is a block diagram showing an example of the configuration of a range image sensor which is the photoelectric conversion system of this embodiment.

[0073] 15, the distance image sensor 401 is configured to include an optical system 407, a photoelectric conversion device 408, an image processing circuit 404, a monitor 405, and a memory 406. The distance image sensor 401 can obtain a distance image according to the distance to the subject by receiving light (modulated light or pulsed light) that is projected from a light source device 411 toward the subject and reflected by the surface of the subject.

[0074] The optical system 407 is configured to have one or more lenses, and guides image light (incident light) from a subject to a photoelectric conversion device 408 , forming an image on the light receiving surface (sensor portion) of the photoelectric conversion device 408 .

[0075] As the photoelectric conversion device 408 , the photoelectric conversion device of each of the above-mentioned embodiments is applied, and a distance signal indicating a distance determined from a light reception signal output from the photoelectric conversion device 408 is supplied to the image processing circuit 404 .

[0076] The image processing circuit 404 performs image processing to construct a distance image based on the distance signal supplied from the photoelectric conversion device 408. The distance image (image data) obtained by this image processing is then supplied to a monitor 405 for display, or supplied to a memory 406 for storage (recording).

[0077] In the range image sensor 401 configured in this way, by applying the above-described photoelectric conversion device, it is possible to obtain, for example, a more accurate range image as the pixel characteristics improve.

[0078] Ninth embodiment The photoelectric conversion system of this embodiment will be described with reference to Fig. 16. Fig. 16 is a diagram showing an example of a schematic configuration of an endoscopic surgery system which is the photoelectric conversion system of this embodiment.

[0079] 16 shows a state in which an operator (doctor) 1131 is performing surgery on a patient 1132 on a patient bed 1133 using an endoscopic surgery system 1150. As shown in the figure, the endoscopic surgery system 1150 is composed of an endoscope 1100, a surgical tool 1110, and a cart 1134 on which various devices for endoscopic surgery are mounted.

[0080] The endoscope 1100 is composed of a lens barrel 1101, a region of a predetermined length from the tip of which is inserted into a body cavity of a patient 1132, and a camera head 1102 connected to the base end of the lens barrel 1101. In the illustrated example, the endoscope 1100 is configured as a so-called rigid lens barrel having a rigid lens barrel 1101, but the endoscope 1100 may be configured as a so-called flexible lens barrel having a flexible lens barrel.

[0081] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 1101. A light source device 1203 is connected to the endoscope 1100, and light generated by the light source device 1203 is guided to the tip of the lens barrel 1101 by a light guide extending inside the lens barrel 1101, and is irradiated via the objective lens toward an observation target in a body cavity of a patient 1132. The endoscope 1100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0082] An optical system and a photoelectric conversion device are provided inside the camera head 1102, and reflected light (observation light) from an observation target is collected on the photoelectric conversion device by the optical system. The observation light is photoelectrically converted by the photoelectric conversion device to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to an observation image. The photoelectric conversion device described in each of the above-mentioned embodiments can be used as the photoelectric conversion device. The image signal is transmitted to a camera control unit (CCU: Camera Control Unit) 1135 as RAW data.

[0083] The CCU 1135 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and performs overall control of the operations of the endoscope 1100 and the display device 1136. Furthermore, the CCU 1135 receives an image signal from the camera head 1102, and performs various types of image processing on the image signal, such as development processing (demosaic processing), for displaying an image based on the image signal.

[0084] Under the control of the CCU 1135 , the display device 1136 displays an image based on an image signal that has been subjected to image processing by the CCU 1135 .

[0085] The light source device 1203 is composed of a light source such as an LED (Light Emitting Diode), and supplies the endoscope 1100 with irradiation light when photographing an operation site or the like.

[0086] The input device 1137 is an input interface for the endoscopic surgery system 1150. A user can input various information and instructions to the endoscopic surgery system 1150 via the input device 1137.

[0087] The treatment tool control device 1138 controls the driving of the energy treatment tool 1112 for cauterizing tissue, incising, sealing blood vessels, or the like.

[0088] The light source device 1203 that supplies irradiation light to the endoscope 1100 when photographing the surgical site can be composed of a white light source composed of, for example, an LED, a laser light source, or a combination of these. When the white light source is composed of a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so that the white balance of the captured image can be adjusted in the light source device 1203. In this case, it is also possible to capture images corresponding to each of the RGB colors in a time-division manner by irradiating the observation target with laser light from each of the RGB laser light sources in a time-division manner and controlling the driving of the image sensor of the camera head 1102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter to the image sensor.

[0089] Furthermore, the light source device 1203 may be controlled to change the intensity of the light it outputs at predetermined time intervals. By controlling the driving of the image sensor of the camera head 1102 in synchronization with the timing of the change in the light intensity to acquire images in a time-division manner and synthesizing the images, it is possible to generate an image with a high dynamic range that is free of so-called blocked-up shadows and blown-out highlights.

[0090] The light source device 1203 may be configured to supply light in a predetermined wavelength band corresponding to the special light observation. In the special light observation, for example, the wavelength dependency of light absorption in body tissue is utilized. Specifically, a predetermined tissue such as blood vessels on the mucous membrane surface is photographed with high contrast by irradiating light in a narrower band than the irradiation light (i.e., white light) in normal observation. Alternatively, the special light observation may be a fluorescent observation in which an image is obtained by fluorescence generated by irradiating excitation light. In the fluorescent observation, it is possible to irradiate excitation light to the body tissue and observe the fluorescence from the body tissue, or to locally inject a reagent such as indocyanine green (ICG) into the body tissue and irradiate the body tissue with excitation light corresponding to the fluorescent wavelength of the reagent to obtain a fluorescent image. The light source device 1203 may be configured to supply narrow band light and / or excitation light corresponding to such special light observation.

[0091] (Tenth embodiment) The photoelectric conversion system of this embodiment will be described with reference to Figs. 17(a) and (b). Fig. 17(a) describes glasses 1600 (smart glasses) which are the photoelectric conversion system of this embodiment. The glasses 1600 have a photoelectric conversion device 1602. The photoelectric conversion device 1602 is the photoelectric conversion device described in each of the above embodiments. A display device including a light-emitting device such as an OLED or LED may be provided on the rear side of the lens 1601. The photoelectric conversion device 1602 may be one or more. A combination of multiple types of photoelectric conversion devices may also be used. The arrangement position of the photoelectric conversion device 1602 is not limited to that shown in Fig. 17(a).

[0092] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the photoelectric conversion device 1602 and the display device. The control device 1603 also controls the operations of the photoelectric conversion device 1602 and the display device. The lens 1601 is formed with an optical system for focusing light on the photoelectric conversion device 1602.

[0093] FIG. 17(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 have a control device 1612, and the control device 1612 is equipped with a photoelectric conversion device corresponding to the photoelectric conversion device 1602 and a display device. The lens 1611 is formed with an optical system for projecting light emitted from the photoelectric conversion device in the control device 1612 and the display device, and an image is projected onto the lens 1611. The control device 1612 functions as a power source for supplying power to the photoelectric conversion device and the display device, and controls the operation of the photoelectric conversion device and the display device. The control device may have a line of sight detection unit that detects the line of sight of the wearer. Infrared light may be used for detecting the line of sight. The infrared light emission unit emits infrared light to the eyeball of a user gazing at a display image. An imaging unit having a light receiving element detects the reflected light of the emitted infrared light from the eyeball, thereby obtaining an image of the eyeball. By having a reduction means for reducing light from the infrared light emission unit to the display unit in a planar view, deterioration of image quality is reduced.

[0094] The gaze of the user with respect to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be applied to gaze detection using the image of the eyeball. As an example, a gaze detection method based on a Purkinje image formed by reflection of irradiated light on the cornea can be used.

[0095] More specifically, the gaze detection process is performed based on the pupil-corneal reflex method. Using the pupil-corneal reflex method, a gaze vector that indicates the direction (rotation angle) of the eyeball is calculated based on the pupil image and the Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0096] The display device of this embodiment may have a photoelectric conversion device having a light receiving element, and may control the display image of the display device based on information about the user's line of sight from the photoelectric conversion device.

[0097] Specifically, the display device determines a first field of view area to which the user gazes and a second field of view area other than the first field of view area based on the line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be received from an external control device. In the display area of ​​the display device, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0098] The display area may have a first display area and a second display area different from the first display area, and a high priority area may be determined from the first display area and the second display area based on line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received. The resolution of the high priority area may be controlled to be higher than the resolution of areas other than the high priority area. In other words, the resolution of an area with a relatively low priority may be lowered.

[0099] AI may be used to determine the first field of view area and areas with high priority. The AI ​​may be a model configured to estimate the angle of the line of sight and the distance to an object at the end of the line of sight from the image of the eyeball, using as teacher data an image of the eyeball and the direction in which the eyeball in the image was actually looking. The AI ​​program may be included in the display device, the photoelectric conversion device, or an external device. If included in the external device, it is transmitted to the display device via communication.

[0100] When display control is performed based on visual recognition detection, the present invention is preferably applicable to smart glasses further including a photoelectric conversion device for capturing an image of the outside world. The smart glasses can display captured outside information in real time.

[0101] [Modified embodiment] The present invention is not limited to the above-described embodiment, and various modifications are possible.

[0102] For example, an example in which part of the configuration of any one of the embodiments is added to another embodiment, or an example in which part of the configuration of another embodiment is substituted therefor, is also included in the embodiments of the present invention.

[0103] Further, the photoelectric conversion systems shown in the sixth and seventh embodiments are examples of photoelectric conversion systems to which the photoelectric conversion device can be applied, and the photoelectric conversion systems to which the photoelectric conversion device of the present invention can be applied are not limited to the configurations shown in Fig. 13 and Fig. 14. The same applies to the ToF system shown in the eighth embodiment, the endoscope shown in the ninth embodiment, and the smart glasses shown in the tenth embodiment.

[0104] It should be noted that the above-mentioned embodiments are merely examples of the implementation of the present invention, and the technical scope of the present invention should not be interpreted as being limited by these embodiments. In other words, the present invention can be implemented in various forms without departing from its technical concept or main features.

[0105] The present disclosure has the following configuration.

[0106] (Configuration 1) The photoelectric conversion device includes a first component having a first surface and a second surface opposite to the first surface, a first photoelectric conversion unit receiving light from the second surface, a second photoelectric conversion unit receiving light from the second surface, and a floating diffusion unit. The first component is provided on the first surface side and has a first transfer gate that transfers a signal charge generated in the first photoelectric conversion unit to the floating diffusion unit. The first component further has a second transfer gate that is provided on the first surface side and transfers a signal charge generated in the second photoelectric conversion unit to the floating diffusion unit. The photoelectric conversion device further includes a second component that is stacked on the first component and has a third surface and a fourth surface opposite to the third surface, and a strip-shaped insulator filled in a through hole provided in the second semiconductor substrate. The insulator has a first contact connected to the first transfer gate and a second contact connected to the second transfer gate. A photoelectric conversion device, wherein an arrangement direction of the first contacts and the second contacts forms an acute angle with a longitudinal direction of the insulator.

[0107] (Configuration 2) 2. The photoelectric conversion device according to configuration 1, wherein, in a plan view, the first transfer gate and the second transfer gate are line-symmetric with respect to the longitudinal direction.

[0108] (Configuration 3) A photoelectric conversion device including a first component, the first component having a first surface and a first semiconductor substrate having a second surface opposite to the first surface, a first photoelectric conversion unit receiving light from the second surface, and a second photoelectric conversion unit receiving light from the second surface. The first component has a first transfer gate provided on the first surface side and transferring a signal charge generated in the first photoelectric conversion unit, and a second transfer gate provided on the first surface side and transferring a signal charge generated in the second photoelectric conversion unit. The first component further has a floating diffusion portion to which the signal charge is transferred via the first transfer gate and the second transfer gate. The second component further has a second semiconductor substrate having a third surface and a fourth surface opposite to the third surface, and an insulator filled in a through hole provided in the second semiconductor substrate, and is laminated on the first component. The insulator has a first contact connected to the first transfer gate and a second contact connected to the second transfer gate. A photoelectric conversion device, wherein a direction in which the first contact and the second contact are arranged forms an acute angle with a direction in which the first photoelectric conversion section and the second photoelectric conversion section are arranged.

[0109] (Configuration 4) 4. The photoelectric conversion device according to configuration 3, wherein the first transfer gate and the second transfer gate are line-symmetric with respect to the direction in a plan view.

[0110] (Configuration 5) A photoelectric conversion device including a first component, the first component having a first surface and a first semiconductor substrate having a second surface opposite to the first surface, a first photoelectric conversion unit receiving light from the second surface, and a second photoelectric conversion unit receiving light from the second surface. The first component has a first transfer gate provided on the first surface side and transferring a signal charge generated in the first photoelectric conversion unit, and a second transfer gate provided on the first surface side and transferring a signal charge generated in the second photoelectric conversion unit. The first component further has a floating diffusion section to which the signal charge is transferred via the first transfer gate and the second transfer gate. The device further includes a second component having a third surface and a fourth surface opposite to the third surface, and a plurality of strip-shaped insulators penetrating the second semiconductor substrate, and laminated on the first component. The insulator is filled in a through hole provided in the second semiconductor substrate, and has a first contact connected to the first transfer gate and a second contact connected to the second transfer gate. The photoelectric conversion device, wherein the first transfer gate and the second transfer gate are line-symmetrical with respect to a longitudinal direction of the insulator in a plan view.

[0111] (Configuration 6) The photoelectric conversion device according to any one of configurations 1 to 5, comprising a first pixel and a second pixel, wherein in the first pixel, the first photoelectric conversion unit and the second photoelectric conversion unit are aligned in a first direction, and further wherein in the second pixel, the first photoelectric conversion unit and the second photoelectric conversion unit are aligned in a second direction intersecting the first direction.

[0112] (Configuration 7) The photoelectric conversion device according to any one of configurations 1 to 6, wherein the first contact and the second contact in the first pixel, and the first contact and the second contact in the second pixel are arranged symmetrically in a planar view.

[0113] (Configuration 8) the first transfer gate and the second transfer gate in the first pixel; The photoelectric conversion device according to any one of configurations 1 to 6, wherein the first transfer gate and the second transfer gate in the second pixel are arranged symmetrically in a planar view.

[0114] (Configuration 9) The photoelectric conversion device according to any one of configurations 1 to 8, wherein the first transfer gate and the second transfer gate are made of polysilicon.

[0115] (Configuration 10) 10. The photoelectric conversion device according to any one of configurations 3 to 9, wherein the first transfer gate and the second transfer gate are made of polysilicon.

[0116] (Configuration 11) The photoelectric conversion device according to any one of configurations 5 to 9, wherein the first transfer gate and the second transfer gate are made of polysilicon.

[0117] (Configuration 12) A photoelectric conversion device according to any one of configurations 1 to 11, a signal processing unit that generates an image using a signal output from the photoelectric conversion device.

[0118] (Configuration 13) A moving object including the photoelectric conversion device according to any one of configurations 1 to 11, A moving body comprising: a control unit that controls the movement of the moving body using a signal output from the photoelectric conversion device. [Explanation of symbols]

[0119] 14 First semiconductor substrate 21 Second semiconductor substrate TR_a First transfer gate TR_b Second transfer gate AMP Amplification transistor FD Floating diffusion section 251 Insulators 206_a First Contact 206_b Second Contact

Claims

1. a first semiconductor substrate having a first surface and a second surface opposite to the first surface; a first photoelectric conversion unit that receives light from the second surface; a second photoelectric conversion unit that receives light from the second surface; A floating diffusion portion; a first component including: a first transfer gate provided on the first surface side and configured to transfer signal charges generated in the first photoelectric conversion unit to the floating diffusion unit; and a second transfer gate provided on the first surface side and configured to transfer signal charges generated in the second photoelectric conversion unit to the floating diffusion unit; a second semiconductor substrate having a third surface and a fourth surface opposite to the third surface; a strip-shaped insulator filled in a through hole provided in the second semiconductor substrate; and a second component stacked on the first component, the insulator has a first contact connected to the first transfer gate and a second contact connected to the second transfer gate and closest to the first contact; A photoelectric conversion device, wherein an acute angle is formed between a direction in which the first contacts and the second contacts are arranged and a longitudinal direction of the insulator.

2. 2. The photoelectric conversion device according to claim 1, wherein the first transfer gate and the second transfer gate are line-symmetrical with respect to the longitudinal direction in a plan view.

3. a first semiconductor substrate having a first surface and a second surface opposite to the first surface; a first photoelectric conversion unit that receives light from the second surface; a second photoelectric conversion unit that receives light from the second surface; a first transfer gate provided on the first surface side and configured to transfer signal charges generated in the first photoelectric conversion portion; a second transfer gate provided on the first surface side and configured to transfer signal charges generated in the second photoelectric conversion portion; a first component having a floating diffusion portion to which the signal charge is transferred via the first transfer gate and the second transfer gate; a second semiconductor substrate having a third surface and a fourth surface opposite to the third surface; a second component having an insulator filled in a through hole provided in the second semiconductor substrate and stacked on the first component; the insulator has a first contact connected to the first transfer gate and a second contact connected to the second transfer gate and closest to the first contact; A photoelectric conversion device, wherein an acute angle is formed between a direction in which the first contact and the second contact are aligned and a direction in which the first photoelectric conversion section and the second photoelectric conversion section are aligned.

4. The photoelectric conversion device according to claim 3, characterized in that the first transfer gate and the second transfer gate are linearly symmetrical in a planar view with respect to the direction in which the first photoelectric conversion unit and the second photoelectric conversion unit are aligned.

5. a first semiconductor substrate having a first surface and a second surface opposite to the first surface; a first photoelectric conversion unit that receives light from the second surface; a second photoelectric conversion unit that receives light from the second surface; a first transfer gate provided on the first surface side and configured to transfer signal charges generated in the first photoelectric conversion portion; a second transfer gate provided on the first surface side and configured to transfer signal charges generated in the second photoelectric conversion portion; a first component having a floating diffusion portion to which the signal charge is transferred via the first transfer gate and the second transfer gate; a second semiconductor substrate having a third surface and a fourth surface opposite to the third surface; a second component having a plurality of strip-shaped insulators penetrating the second semiconductor substrate and stacked on the first component; the insulator is filled in a through hole provided in the second semiconductor substrate, and has a first contact connected to the first transfer gate, and a second contact connected to the second transfer gate and closest to the first contact; The photoelectric conversion device according to claim 1, wherein the first transfer gate and the second transfer gate are symmetrical with respect to the longitudinal direction of the insulator in a plan view.

6. a first pixel and a second pixel; In the first pixel, the first photoelectric conversion unit and the second photoelectric conversion unit are aligned in a first direction, 6. The photoelectric conversion device according to claim 5, wherein in the second pixel, the first photoelectric conversion unit and the second photoelectric conversion unit are aligned in a second direction intersecting the first direction.

7. the first contact and the second contact in the first pixel; 7. The photoelectric conversion device according to claim 6, wherein the first contact and the second contact in the second pixel are arranged symmetrically in a plan view.

8. the first transfer gate and the second transfer gate in the first pixel; 7. The photoelectric conversion device according to claim 6, wherein the first transfer gate and the second transfer gate in the second pixel are arranged symmetrically in a plan view.

9. 2. The photoelectric conversion device according to claim 1, wherein the first transfer gate and the second transfer gate are made of polysilicon.

10. 4. The photoelectric conversion device according to claim 3, wherein the first transfer gate and the second transfer gate are made of polysilicon.

11. 6. The photoelectric conversion device according to claim 5, wherein the first transfer gate and the second transfer gate are made of polysilicon.

12. The photoelectric conversion device according to claim 1 ; a signal processing unit that generates an image using a signal output from the photoelectric conversion device.

13. A moving object comprising the photoelectric conversion device according to claim 1, A moving body comprising a control unit that controls the movement of the moving body using a signal output from the photoelectric conversion device.

14. The photoelectric conversion device according to claim 3 ; a signal processing unit that generates an image using a signal output from the photoelectric conversion device.

15. A moving object comprising the photoelectric conversion device according to claim 3, A moving body comprising a control unit that controls the movement of the moving body using a signal output from the photoelectric conversion device.

16. The photoelectric conversion device according to claim 5 ; a signal processing unit that generates an image using a signal output from the photoelectric conversion device.

17. A moving object comprising the photoelectric conversion device according to claim 5, A moving body comprising a control unit that controls the movement of the moving body using a signal output from the photoelectric conversion device.

Images