Electronic component and device

Abstract

To provide a technique advantageous for suppressing a temperature rise of a semiconductor element.SOLUTION: An electronic component includes a base body, a Peltier element, a semiconductor element mounted on a mounting surface of the base body via the Peltier element, and a frame body disposed to surround a side surface of the semiconductor element, wherein a first electrode provided on the semiconductor element is connected to a second electrode provided on the frame body via a conductive wire, and the base body and the frame body are bonded by a bonding member having a lower thermal conductivity than the base body.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to electronic components and devices. [Background technology]

[0002] Patent Document 1 discloses an electronic device that includes a signal processing device and an imaging element disposed on the signal processing device. Patent Document 1 also discloses that a Peltier element is disposed as a cooling member between the signal processing device and a package base in order to suppress temperature increases in the signal processing device and the imaging element. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2006-191465 Summary of the Invention [Problem to be solved by the invention]

[0004] In the configuration shown in Patent Document 1, heat from the heat-generating side of the Peltier element is transferred to the base, and this heat may then be transferred from the base to the signal processing device or imaging element, which are semiconductor elements, via wires that supply signals and power.

[0005] An object of the present invention is to provide a technique that is advantageous in suppressing temperature rise in semiconductor elements. [Means for solving the problem]

[0006] In view of the above problems, an electronic component according to an embodiment of the present invention is an electronic component including a base, a Peltier element, a semiconductor element mounted on the mounting surface of the base via the Peltier element, and a frame body arranged to surround the side of the semiconductor element, wherein a first electrode provided on the semiconductor element is connected to a second electrode provided on the frame body via a conductive wire, and the base and the frame body are joined by a joining member having a lower thermal conductivity than the base. [Effects of the Invention]

[0007] According to the present invention, it is possible to provide a technique that is advantageous in suppressing a temperature rise in a semiconductor element. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a cross-sectional view showing a configuration example of an electronic component according to an embodiment of the present invention. [Figure 2] FIG. 2 is a top view showing a configuration example of the electronic component shown in FIG. 1. [Figure 3] FIG. 2 is a bottom view showing a configuration example of the electronic component shown in FIG. 1. [Figure 4] FIG. 2 is a cross-sectional view showing a configuration example of the electronic component of FIG. 1. [Figure 5] FIG. 2 is a cross-sectional view showing a configuration example of the electronic component of FIG. 1. [Figure 6] 2A to 2C are diagrams illustrating a comparative example of a method for joining conductive wires of the electronic component of FIG. 1. [Figure 7] 2A to 2C are diagrams for explaining a method of joining conductive wires of the electronic component of FIG. 1. [Figure 8] FIG. 2 is a cross-sectional view showing a configuration example of the electronic component of FIG. 1. [Figure 9] FIG. 2 is a cross-sectional view showing a configuration example of the electronic component of FIG. 1. [Figure 10] 2 is a cross-sectional view showing an example of the configuration of a cooling member for the electronic component shown in FIG. 1; [Figure 11] FIG. 2 is a cross-sectional view showing a modified example of the electronic component of FIG. [Figure 12] FIG. 2 is a cross-sectional view showing a modified example of the electronic component of FIG. [Figure 13] FIG. 2 is a diagram showing an example of the arrangement of cooling members for the electronic components shown in FIG. 1. [Figure 14] FIG. 2 is a cross-sectional view showing a modified example of the electronic component of FIG. [Figure 15] FIG. 2 is a cross-sectional view showing a modified example of the electronic component of FIG. [Figure 16] 2A and 2B are a cross-sectional view and a bottom view showing a modified example of the electronic component of FIG. 1. [Figure 17] 2 is a cross-sectional view showing an example of connection of the electronic component of FIG. 1 to a mounting board. [Figure 18] 2 is a cross-sectional view showing an example of connection of the electronic component of FIG. 1 to a mounting board. [Figure 19] FIG. 2 is a cross-sectional view showing a modified example of the electronic component of FIG. [Figure 20] FIG. 1 is a diagram showing an example of the configuration of a device incorporating an electronic component according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0010] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In the following description, terms indicating specific directions or positions (e.g., "upper," "lower," "right," "left," and other terms including these terms) will be used as necessary. The use of these terms is intended to facilitate understanding of the embodiments with reference to the drawings, and the meanings of these terms do not limit the technical scope of the present disclosure.

[0011] In this specification, a planar view refers to a view from a direction perpendicular to the light incident surface of the semiconductor layer. A cross-sectional view refers to a surface in a direction perpendicular to the light incident surface of the semiconductor layer. When the light incident surface of the semiconductor layer is a rough surface when viewed microscopically, the planar view is defined based on the light incident surface of the semiconductor layer when viewed macroscopically.

[0012] The semiconductor layer has a first surface onto which light is incident and a second surface opposite to the first surface. In this specification, the depth direction is the direction from the first surface toward the second surface of the semiconductor layer on which the PD (photodiode) is disposed. Hereinafter, the "first surface" may be referred to as the "front surface," and the "second surface" may be referred to as the "rear surface." The "depth" of a point or region in the semiconductor layer refers to the distance from the first surface (front surface) of that point or region. When there is a point (or region) Z1 whose distance (depth) from the first surface is d1 and a point (or region) Z2 whose distance (depth) from the first surface is d2, and d1 > d2, it may be expressed as "Z1 is deeper than Z2" or "Z2 is shallower than Z1." Also, when there is a point (or region) Z3 whose distance (depth) from the first surface is d3 and d1>d3>d2 holds, it can be expressed as "Z3 is at a depth between Z1 and Z2" or "Z3 is between Z1 and Z2 in the depth direction."

[0013] Electronic components according to embodiments of the present disclosure will be described with reference to Figures 1 to 19. Figure 1 is a cross-sectional view schematically illustrating an exemplary configuration of an electronic component 100 according to this embodiment. Figure 2 is a top plan view of the electronic component 100, and Figures 3(a) and 3(b) are bottom views of the electronic component 100.

[0014] In an electronic component 100 equipped with a semiconductor element 105 having a pixel region 106 in which a plurality of pixels including a photodiode are arranged, noise may occur in the signals output from the plurality of pixels due to temperature changes. To reduce noise, it is conceivable to mount a cooling member for cooling the semiconductor element 105 on a package in which the semiconductor element 105 is mounted. One example of a member used to cool the semiconductor element 105 is a Peltier element. Here, an electronic component 100 equipped with a Peltier element will first be described.

[0015] Electronic component 100 includes base 101, Peltier element 108, semiconductor element 105 mounted on mounting surface 151 of base 101 via Peltier element 108, and frame 102 arranged to surround the side surfaces of semiconductor element 105. Electronic component 100 also includes optical member 104 arranged to cover semiconductor element 105 and bonded to frame 102. Base 101, frame 102 bonded to base 101 with bonding member 103, and optical member 104 bonded to frame 102 with bonding member 110 may also be called a package of electronic component 100.

[0016] Peltier element 108 is disposed between substrate 201 and substrate 202. Power can be supplied to Peltier element 108 from outside electronic component 100 via electrode 123 provided on frame 102, conductive wire 121, and electrode 122 provided on substrate 202. In this specification, a configuration including Peltier element 108, substrate 201, and substrate 202 may be referred to as cooling member 181. Cooling member 181 is joined to base body 101 by joining member 107. Semiconductor element 105 is joined to cooling member 181 by joining member 109. When electronic component 100 (Peltier element 108) is in operation, substrate 201 is connected to the heat absorption side of Peltier element 108, and substrate 202 is connected to the heat generation side of Peltier element 108.

[0017] Electrodes 112 provided on semiconductor element 105 are connected to electrodes 113 provided on frame 102 via conductive wires 111. Signals and power can be supplied to semiconductor element 105 from outside electronic component 100 via conductive wires 111. Furthermore, conductive wires 111 can be used to output signals obtained in semiconductor element 105 to outside electronic component 100.

[0018] The base 101 can be formed primarily from a ceramic such as alumina or aluminum nitride. In other words, the base 101 can contain at least one of alumina and aluminum nitride. This is because ceramics such as alumina and aluminum nitride have high thermal conductivity and can easily dissipate heat generated by the Peltier element 108 to the outside of the package.

[0019] The frame body 102 may be formed, for example, primarily from a ceramic such as alumina or aluminum nitride, similar to the base body 101. In other words, the frame body 102 may contain at least one of alumina and aluminum nitride. Since the frame body 102 is joined to the base body 101 via the joining member 103, joining reliability is improved by configuring the base body 101 and the frame body 102 so that a difference in linear expansion coefficient is unlikely to occur. Therefore, for example, the base body 101 and the frame body 102 may be made of the same material.

[0020] The bonding member 103 bonding the base 101 and the frame 102 may be, for example, an epoxy-based, silicone-based, or acrylic-based adhesive, or a resin molded product thereof. In other words, the bonding member 103 bonding the base 101 and the frame 102 may contain at least one of an epoxy-based resin, a silicone-based resin, and an acrylic-based resin. The bonding member 103 must have a lower thermal conductivity than the base 101 and the frame 102 to prevent heat from the heat-generating side of the Peltier element 108 from being transferred from the base 101 to the frame 102 and then from the frame 102 to the semiconductor element 105 via the conductive wire 111. Therefore, the base 101 and the frame 102 are bonded to each other by the bonding member 103 made of a material with a lower thermal conductivity than the base 101, such as the material described above. To prevent heat transfer, the bonding member 103 may be thicker. The thickness of the bonding member 103 will be described in detail below.

[0021] The optical member 104 is formed using, for example, glass, quartz crystal, sapphire, or the like. Quartz crystal and sapphire can also function as a low-pass filter (LPF). Sapphire is stronger than quartz crystal and can be made thinner. This is advantageous for reducing the overall size of the electronic component 100 (package). Furthermore, the linear expansion coefficient of sapphire is similar to that of alumina. Therefore, if the frame 102 is made of alumina, and the optical member 104 is made of sapphire, the bonding reliability can be increased.

[0022] The semiconductor element 105 has various elements, circuits, and the like formed on a semiconductor substrate such as silicon. In this embodiment, as described above, the semiconductor element 105 has a pixel region 106 in which a plurality of pixels, each including a photodiode, are arranged in an array. A photodiode is an example of a photoelectric conversion element. The semiconductor element 105 may be, for example, a CMOS image sensor. Furthermore, for example, the photodiode included in the pixel may be an avalanche diode. When the photodiode is an avalanche diode, the semiconductor element 105 may function as a Single Photon Avalanche Diode (SPAD) sensor.

[0023] The bonding member 110 that bonds the frame 102 and the optical member 104 may be, for example, an epoxy-based adhesive. The bonding member 110 may be an ultraviolet-curable member or a thermosetting member. The space surrounded by the base 101, the frame 102, and the optical member 104, in which the semiconductor element 105 is disposed, may be maintained in a nitrogen atmosphere or a reduced-pressure atmosphere for thermal insulation. Therefore, a material that can maintain airtightness and has low moisture permeability may be used for the bonding member 110. To maintain low moisture permeability, it is preferable that the bonding member 110 be thin and wide. For example, the thickness of the bonding member 110 may be 20 μm or less or 30 μm or less. The width of the bonding member 110 may be appropriately set from the viewpoints of miniaturization of the electronic component 100 (package), bonding reliability, airtightness, moisture permeability, etc.

[0024] A material with high thermal conductivity, such as silver paste, may be used for the bonding member 107 that bonds the cooling member 181 and the Peltier element 108, and the bonding member 109 that bonds the Peltier element 108 and the semiconductor element 105. Since gaps on the bonding surfaces hinder thermal conduction, these bonding members 107 and 109 may be formed on as large an area as possible of the bonding surfaces, or even on the entire bonding surfaces. The thickness of the bonding materials 107 and 109 may be, for example, approximately 100 μm or less, or may be approximately 20 to 30 μm.

[0025] 2, pixel region 106 of rectangular semiconductor element 105 may be disposed in the center of electronic component 100. Furthermore, multiple electrodes 112 may be provided on each side of semiconductor element 105, and each electrode 112 may be connected to electrode 113 of frame body 102 via conductive wire 111. Here, when the length of the electronic component in the longitudinal direction is x and the length in the lateral direction is y, electronic component 100 is assumed to have lengths x and y both of approximately 20 mm. However, the size of electronic component 100 is not limited to this and may be smaller or larger.

[0026] 3(a) and 3(b) are plan views of the electronic component 100 from the side opposite the optical member 104. FIG. 3(a) is a schematic diagram of a package (including the base 101, frame 102, and optical member 104, as described above) constituting the electronic component 100, which is a so-called land grid array (LGA) package. FIG. 3(b) is a schematic diagram of a so-called leadless ceramic chip carrier (LCC) package. The electrodes 131 for connecting the package to the outside of the package may be configured not only as an LGA or LCC, but also as a pin grid array (PGA), for example. Since an LGA can be made lower in height than other configurations, it may be advantageous from the perspective of miniaturization. A combination of an LGA and an LCC may also be used. The electrodes 131 of the LGA or LCC are connected to the electrodes 113 or 123 via an inner layer wiring pattern (not shown) provided within the frame 102.

[0027] When an LGA package is used, it can be manufactured using a reflow oven, which is expected to improve productivity compared to other methods. However, it is necessary to prevent the solder contained in the Peltier element 108 from melting and damaging the Peltier element 108 during the reflow process when mounting the electronic component 100 (package) on a mounting board. Therefore, in the mounting process used to manufacture the electronic component 100, the reflow process must be a low-temperature process, for example, at 200°C or below. Therefore, the electronic component 100 (package) and the mounting board can be joined using a material with a low melting point, such as resin-reinforced solder.

[0028] As shown in FIG. 3( a), the LGA terminal arrangement may have a central portion without an electrode array. Joining a member with high thermal conductivity to this portion without an electrode array and dissipating heat from the base 101 to the outside can be important for improving the cooling efficiency of the Peltier element 108. Examples of members with high thermal conductivity that can be connected to the base 101 include a carbon graphite sheet, an alloy plate for a heat spreader, and a heat pipe. For example, as shown in FIG. 17( a), a carbon graphite sheet 403 is joined to the base 101. The carbon graphite sheet 403 is exposed to the outside of the electronic component 100 through an opening or the like provided in the mounting board 401. The right end of the carbon graphite sheet 403 in FIG. 17( a) is connected to the housing of a camera module or the like in which the electronic component 100 is mounted. This creates a path for dissipating heat generated by the electronic component 100 to the outside of the electronic component 100.

[0029] 4 is a schematic enlarged view of a portion where the base body 101 and the frame body 102 of the electronic component 100 of this embodiment are bonded. The frame body 102 may include a surface 161 on which the electrodes 113 are arranged and a surface 162 opposite to the surface 161. The frame body 102 may further include a top surface to which the optical member 104 is bonded, an outer surface that forms the outer edge of the package, and an inner surface that faces the space in which the semiconductor element 105 of the package is disposed. In this embodiment, the mounting surface 151 of the base body 101 on which the Peltier element 108 is placed and the surface 162, which is the bottom surface of the frame body 102, are bonded by the bonding member 103. Here, the thickness of the bonding member 103 may be t, for example, 20 to 30 μm, or may be 100 μm or more. The thickness of the bonding member 103 can be set appropriately not only from the viewpoint of heat conduction but also from the viewpoint of miniaturization of the electronic component 100, airtightness, moisture permeability, and the like, similar to the bonding member 110 described above.

[0030] An electrode 112 provided on the semiconductor element 105 and an electrode 113 provided on the frame 102 are connected by a conductive wire 111. Here, the angle formed by the conductive wire 111 and a normal 163 to a surface 161 of the frame 102 on which the electrode 113 is arranged is defined as angle θ. Arranging the electrode 113 in a position close to the semiconductor element 105 can achieve miniaturization of the electronic component 100. Therefore, for example, the conductive wire 111 may rise from the electrode 113 at an angle of 10° or less with respect to the normal 163 to the surface 161 of the frame 102 on which the electrode 113 is arranged. In other words, θ≦10°. Here, the portion of the conductive wire 111 rising from the electrode 113 refers to the portion where the conductive wire 111 begins to extend linearly from a ball or stitch formed at the joint between the conductive wire 111 and the electrode 113. Therefore, this portion is the portion of the conductive wire 111 observed relatively macroscopically.

[0031] In electronic component 100 in which Peltier element 108 is mounted together with semiconductor element 105 as in this embodiment, conductive wire 111 connecting semiconductor element 105 and frame 102 may have a certain length to suppress heat input from the heat-generating side of Peltier element 108. In the configuration shown in FIG. 4 , electrode 113 is disposed at a height between mounting surface 151 of base 101 and semiconductor element 105. To ensure the wire length of conductive wire 111, electrode 113 may be disposed at a lower position, in other words, a position closer to mounting surface 151 of base 101. For example, electrode 113 may be disposed between mounting surface 151 of base 101 and semiconductor element 105, at the same height as Peltier element 108 in cooling member 181.

[0032] For example, the conductive wire 111 may be arranged in a direction of a normal 163 to the surface 161 of the frame body 102 on which the electrode 113 is arranged, so as to reach a position 1 mm or more from the electrode 113. The height of the conductive wire 111 in the direction of the normal 163 to the surface 161 is determined by the thickness of the Peltier element 108 (cooling member 181), the thickness of the semiconductor element 105, the thickness of the bonding member 103, and the thickness of the surface 161 on which the electrode 113 is provided, from the surface 162 of the frame body 102. For example, in order to maintain the thickness of the semiconductor element 105, back grinding may not be performed in the manufacturing process of the semiconductor element 105, and the semiconductor element 105 may have a thickness of approximately 0.7 to 0.8 mm. Furthermore, if back grinding is not performed in the manufacturing process of the semiconductor element 105, the thickness of the semiconductor element 105 is large, and therefore the thermal conductivity in a direction parallel to the main surface including the pixel region 106 of the semiconductor element 105 is high. This can increase the effect of maintaining a uniform temperature distribution within the surface of semiconductor element 105. Even when back grinding is performed in the manufacturing process of semiconductor element 105, by setting the thickness of semiconductor element 105 to about 0.5 mm, the length in the thickness direction of semiconductor element 105 (in other words, the length in the direction of normal 163 of the conductive wire) can be ensured.

[0033] Similarly, by increasing the thickness of Peltier element 108 (cooling member 181), it is possible to extend the length of conductive wire 111 in the direction of normal 163 to surface 161. However, if Peltier element 108 (cooling member 181) becomes thicker, there is a possibility that a capillary used in wire bonding to connect conductive wire 111 to electrodes 112 and 113 may interfere with semiconductor element 105. This will be described later.

[0034] Furthermore, the conductive wire 111 may be thinner, for example, 15 μm in diameter, than the conductive wire typically used in semiconductor devices such as imaging devices that do not include a Peltier element 108. This is because increasing the thermal resistance of the conductive wire 111 can suppress the heat flow from the heat-generating side of the Peltier element 108 to the semiconductor element 105 via the base 101 and the frame 102. Furthermore, to increase the thermal resistance of the conductive wire 111, the wire used as the conductive wire 111 may be a wire primarily made of a gold alloy or aluminum, rather than a gold wire. For example, the conductive wire 111 may be made of a gold alloy or aluminum wire with a thermal conductivity of 300 W / mK or less. The diameter of the conductive wire 111 can be determined by balancing the allowable current, resistance, inductance, and other factors to prevent breakage. On the other hand, the Peltier element 108 consumes a lot of power. Therefore, the conductive wire 121 that electrically connects the electrode 122 provided on the base material 202 for supplying power to the Peltier element 108 to the electrode 123 provided on the frame 102 may have a large wire diameter. For example, the wire diameter of the conductive wire 121 may be larger than the wire diameter of the conductive wire 111.

[0035] Figs. 5(a) to 5(c) are drawings for explaining the minimum clearance between the capillary 300 for bonding and the semiconductor element 105. For example, as shown in Fig. 5(a), when the cooling member 181 with thickness A is used, the distance between the upper end of the semiconductor element 105 and the portion of the capillary 300 closest to the semiconductor element 105 at the same height as the upper end of the semiconductor element 105 is defined as a. On the other hand, as shown in Fig. 5(b), when the cooling member 181 with thickness B is used, the distance between the upper end of the semiconductor element 105 and the portion of the capillary 300 closest to the semiconductor element 105 at the same height as the upper end of the semiconductor element 105 is defined as b. For example, when the same frame body 102 and joining member 103 are used, if the relationship of the thickness is A < B, the relationship of the distances is a > b.

[0036] The minimum clearance between the semiconductor element 105 and the capillary 300 varies depending on the size of the semiconductor element 105 and the position of the electrode 113. Similar to Fig. 5(b), even when the cooling member 181 with thickness B is used, as shown in Fig. 5(c), by shifting the position of the electrode 113 in a direction away from the semiconductor element 105, the distance c between the semiconductor element 105 and the capillary 300 can be ensured. Also, the distance c can be ensured by bringing the surface 161 on which the electrode 113 of the frame body 102 is arranged closer to the semiconductor element 105, that is, by shifting it upward.

[0037] Figs. 6(a) and 6(b) are drawings for explaining the relationship between the angle of the conductive wire 111 and the capillary 300 during the downward pressing of general wire bonding. Fig. 6(a) is a view when the angle θ formed by the conductive wire 111 and the normal line 163 of the surface 161 on which the electrode 113 of the frame body 102 is arranged is greater than 10 to 15°. Fig. 6(b) is a view when the angle θ is less than 10 to 15°.

[0038] In wire bonding as shown in FIG. 6( a), after bonding the electrode 112 and the conductive wire 111, a wire loop is formed, and the electrode 113 and the conductive wire 111 are joined by stitch bonding. In this case, the tip of the capillary 300 used for bonding has an angle of about 20 to 30° in cross section. As shown in FIG. 6( b), consider a case where bonding is attempted in a state where the angle θ between the conductive wire 111 and the normal 163 is steeper than the angle at the tip of the capillary 300. In such a case, interference between the capillary 300 and the conductive wire 111 may prevent bonding. In order to increase the angle θ, horizontal space is required between the electrode 113 and the end of the frame 102, which may hinder miniaturization of the electronic component 100.

[0039] 7 is a diagram illustrating the relationship between the angle of the conductive wire 111 and the capillary 300 during wire bonding by the ball stitch on bonding (BSOB) method. In the BSOB method, first, a ball is formed on the electrode 113. Then, the electrode 113 and the conductive wire 111 are joined, and the capillary 300 is raised almost vertically to join the electrode 112 and the conductive wire 111. That is, at the joint between the conductive wire 111 and the electrode 112, a ball is formed between the conductive wire 111 and the electrode 112, and at the joint between the conductive wire 111 and the electrode 113, a ball is formed between the conductive wire 111 and the electrode 113. Furthermore, at the joint between the electrode 112 and the conductive wire 111, a stitch is formed on the ball and joined. In this BSOB method, as long as the distance required to join the conductive wire 111 and the electrode 113 is secured, no interference occurs between the capillary 300 and the conductive wire 111 when joining the conductive wire 111 to the semiconductor element 105, regardless of the distance between the electrode 113 and the end of the frame 102. Therefore, compared to joining the conductive wire 111 as shown in Figures 6(a) and 6(b), the BSOB method makes it possible to reduce the horizontal space, thereby achieving a smaller electronic component 100.

[0040] 8(a) to 8(d) and 9 are enlarged schematic views of the bonding portion between base body 101 and frame body 102 of electronic component 100 of this embodiment, and are modifications of the configuration shown in Fig. 4. The main differences from the configuration shown in Fig. 4 are thickness t of bonding member 103 and angle θ at which conductive wire 111 rises relative to normal 163 of surface 161 of frame body 102 on which electrode 113 is arranged.

[0041] For example, as shown in FIG. 8( a), when the thickness t of the bonding member 103 is approximately equal to the thickness of the Peltier element 108, the surface 161 of the frame 102 on which the electrode 113 is provided approaches the height of the surface of the semiconductor element 105 on which the electrode 112 is provided. In this configuration, even in typical wire bonding, in which the conductive wire 111 is first bonded to the electrode 112 and then to the electrode 113, the amount of downward movement is reduced, making it possible to reduce the distance between the electrodes 112 and 113 while suppressing interference between the capillary 300 and the upper end of the semiconductor element 105. As a result, it is possible to reduce the horizontal space. In this case, the angle θ is greater than 10°, and the length of the conductive wire 111 is shorter than when the thickness t is thinner. Although a shorter length of the conductive wire 111 reduces thermal resistance, a sufficiently thick bonding member 103 can effectively suppress heat flow from the heat-generating side of the Peltier element 108. Furthermore, since the BSOB method does not need to be used, the number of steps in the wire bonding process can be reduced. The amount of downward movement of the wire bonding can also be reduced by increasing the thickness of the frame body 102 so that the surface 161 on which the electrode 113 of the frame body 102 is provided is higher, rather than by increasing the thickness t of the bonding member 103. However, if the thickness t of the bonding member 103, which has low thermal conductivity, is thin and the thickness of the frame body 102, which has high thermal conductivity, is thick, there is a possibility that the heat from the heat-generating side of the Peltier element 108 cannot be sufficiently suppressed.

[0042] As shown in FIG. 8(b), the frame body 102 and the bonding member 103 may be formed so that two surfaces of the bonding member 103 contact two surfaces of the frame body 102. In the configuration shown in FIG. 8(b), the frame body 102 contacts two surfaces on the outer edge of the bonding member 103. If the thickness t of the bonding member 103 is large, a step between the surface 162, which is the back surface of the frame body 102, and the back surface of the base 101 may make bonding to the mounting substrate 401 (described later) difficult. Therefore, as shown in FIG. 8(b), a structure may be adopted in which the step between the surface 162 of the frame body 102 and the back surface of the base 101 is not increased more than necessary. Furthermore, as shown in FIG. 8(c), the surface 162 of the frame body 102 may be disposed at the same height as the surface 152, which is the bottom surface of the base 101. In this case, the bonding member 103 may not be in contact with the side surface 153 of the base 101 as shown in Fig. 8(c), or may be in contact with the side surface 153 of the base 101 as shown in Fig. 8(d). Also, as shown in Figs. 8(a) to 8(d), the electrode 123 for supplying power to the Peltier element 108 may be provided on the mounting surface 151 of the base 101, rather than on the frame 102. In this case, an electrode for connection to a mounting board, electrically connected to the electrode 123, may be provided on the surface 152 of the base 101 opposite the mounting surface 151.

[0043] 9, the joining member 103 may be composed of multiple members, including members 133a and 133b. In this case, the joint between the base 101 and the frame 102 has a gap surrounded by the base 101, the frame 102, the members 133a, and the members 133b. In other words, a hollow space without the joining member 103 may be provided between the base 101 and the frame 102. For example, the thermal conductivity of typical epoxy resins is approximately 0.1 to 0.8 W / m·K. On the other hand, the thermal conductivity of air is approximately 0.0241 W / m·K. Therefore, it is possible to suppress the heat flow from the heat-generating side of the Peltier element 108 more effectively than when the joining member 103 is integral. However, if the joining member 103 is extremely small, the reliability of the joint between the base 101 and the frame 102 may be reduced. Therefore, the members 133a and 133b may be formed to an appropriate size in consideration of bonding reliability.

[0044] In any of the above-described configurations, the respective configurations of electronic component 100 can be designed from the viewpoint of miniaturization of electronic component 100, suppression of heat flow from the heat-generating side of Peltier element 108, bonding reliability, and other performance aspects. However, by using the above-described configuration, it is possible to suppress the heat flow from the heat-generating side of Peltier element 108 to semiconductor element 105. Therefore, an electronic component 100 in which the temperature rise of semiconductor element 105 is suppressed can be realized.

[0045] 10 to 14, the Peltier element 108 used in the electronic component 100 of this embodiment will be described. FIG. 10 is a diagram illustrating an example of the configuration of the Peltier element 108 disposed in the cooling member 181. The Peltier element 108 has a configuration in which P-type semiconductors 204p and N-type semiconductors 204n are alternately connected in a π shape by metal electrodes 203. The Peltier element 108 is disposed between a base material 201 and a base material 202, and is supported by the base materials 201 and 202.

[0046] The substrate 201 and the substrate 202 function as heat sinks. When functioning as the cooling member 181 arranged in the electronic component 100, the surface of the substrate 201 facing the semiconductor element 105 can be a heat absorption surface, and the surface of the substrate 202 facing the base 101 can be a heat generation surface. The substrates 201 and 202 may be made of ceramics such as alumina or aluminum nitride. Furthermore, the surfaces of the substrates 201 and 202 may be gold-plated or otherwise treated to enhance thermal conductivity. Furthermore, for example, the base 101 and the substrate 202 may be made of the same material. By reducing the difference in linear expansion coefficient between the base 101 and the substrate 202, joint reliability is improved. The aforementioned electrode 122 is arranged to supply power to the Peltier element 108. For example, the electrode 122a is connected to a power supply potential VDD, and the electrode 122b is connected to a ground potential GND.

[0047] When a voltage V is applied to the Peltier element 108, a current I flows. c , the temperature on the heat generating side is T h When the Seebeck coefficient is α, the internal resistance is R, the thermal conductivity is λ, and the temperature difference between the heat absorption side and the heat dissipation side is ΔT, the amount of heat absorbed Q c is expressed by the following equation (1). Q c =αT c I-λΔT-(1 / 2)RI 2 ···(1) That is, the heat absorption amount Q of the Peltier element 108 c In order to increase this, it is possible to reduce the thermal conductivity λ and the internal resistance R.

[0048] Next, variations in the arrangement of the Peltier element 108 will be described using Figures 11(a) to 11(c). Here, in this specification, when a cooling member 181 including the Peltier element 108 is placed on the base 101, the outer edge of the Peltier element 108 is defined in orthogonal projection onto the mounting surface 151 of the base 101. The outer edge of the Peltier element 108 is defined as the imaginary line connecting the outer edges of the P-type semiconductor 204p and the N-type semiconductor 204n that are arranged on the Peltier element 108 in the orthogonal projection onto the mounting surface 151. As shown in Figures 11(a) to 11(c), in the orthogonal projection onto the mounting surface 151 of the base 101, the region surrounded by the outer edge of the Peltier element 108, in other words, the region in which the Peltier element 108 is arranged, is indicated as region R1. 11(c), in the orthogonal projection onto the mounting surface 151 of the base 101, the region where the semiconductor element 105 is arranged is shown as region R2. Similarly, in the orthogonal projection onto the mounting surface 151 of the base 101, the region where the pixel region 106 of the semiconductor element 105 is arranged is shown as region R3.

[0049] In the electronic component 100 shown in FIG. 11( a), the Peltier element 108 is the same size as the semiconductor element 105. In other words, the regions R1 and R2 are the same size. In this case, the entire surface of the semiconductor element 105 can be cooled evenly. However, as the thermal conductivity λ in the above formula (1) increases, power consumption increases, and the amount of heat dissipated from the heat-generating side also increases. As a result, it becomes difficult to suppress the heat flow from the heat-generating side of the Peltier element 108 through the base 101, the frame 102, and the conductive wire 111, which may increase the total power consumption of the electronic component 100. Furthermore, if the electrode 123 for supplying power to the Peltier element 108 is provided on the base 101 rather than the frame 102, an electrode space is required outside the region R1 on the base 101, which may be disadvantageous in terms of miniaturizing the electronic component 100.

[0050] In the electronic component 100 shown in FIG. 11(b), in an orthogonal projection onto the mounting surface 151 of the base 101, the outer edge of the Peltier element 108 is located inside the outer edge of the semiconductor element 105. In other words, the region R1 in which the Peltier element 108 is located is large enough to be contained within the region R2 in which the semiconductor element 105 is located. The Peltier element 108 is also approximately the same size as the pixel region 106 of the semiconductor element 105. In other words, the regions R1 and R3 are approximately the same size. In this case, the entire surface of the semiconductor element 105 can be cooled evenly, but the thermal conductivity λ is high, resulting in increased power consumption. This makes it difficult to suppress the heat flow from the heat-generating side of the Peltier element 108 through the base 101, the frame 102, and the conductive wire 111, which may increase the total power consumption of the electronic component 100.

[0051] 11(c), in the orthogonal projection onto the mounting surface 151 of the base 101, the outer edge of the Peltier element 108 is located inside the outer edge of the semiconductor element 105. In other words, the size of the region R1 in which the Peltier element 108 is located is such that it is contained within the region R2 in which the semiconductor element 105 is located. Furthermore, in the orthogonal projection onto the mounting surface 151 of the base 101, the outer edge of the Peltier element 108 is located inside the outer edge of the pixel region 106. In other words, the region R1 in which the Peltier element 108 is located is smaller than the region R3 in which the pixel region 106 is located.

[0052] Generally, the smaller the area of ​​the heat dissipation side of the Peltier element 108, the smaller the thermal conductivity λ. c Therefore, it is important to select the Peltier element 108 having an appropriate number of P-type semiconductors 204p and N-type semiconductors 204n. For example, as described above, the temperature of the heat absorption side of the Peltier element 108 is set to T c , the temperature on the heat generating side is T h The thermal resistance of the entire conductive wire 111 disposed in the electronic component 100 is R w In this case, the heat P w teeth, Pw =(T h -T c ) / R w ···(2) It is expressed as:

[0053] The temperature T at which the semiconductor element 105 is cooled c In order to keep the power consumption P s and the heat P transmitted through the conductive wire 111 w The sum of these is the heat absorption amount Q of the Peltier element 108. c Under such conditions, the power consumption P of the Peltier element 108 p In order to suppress this, the amount of heat absorbed Q c and the power consumption P of the Peltier element 108 p The ratio of COP to Q is COP=Q c / P p It is necessary to select a Peltier element having a number of P-type semiconductors 204p and N-type semiconductors 204n such that

[0054] When a widely mass-produced bismuth telluride-based Peltier element is used as the Peltier element 108 of this embodiment to cool the semiconductor element 105, as shown in Fig. 11(c), a Peltier element 108 that is smaller than the semiconductor element 105 can have improved efficiency. That is, by selecting a Peltier element 108 that has a relatively small number of P-type semiconductors 204p and N-type semiconductors 204n, that is, a Peltier element 108 that has a small thermal conductivity λ, it becomes possible to efficiently absorb heat and reduce the total power consumption of the electronic component 100 in many cases.

[0055] In the configuration shown in FIG. 11( c), the electrode 112 is disposed in a position overlapping a hollow region below the semiconductor element 105 where the Peltier element 108 (cooling member 181) is not disposed. In this case, when bonding the electrode 112 and the conductive wire 111, heat and ultrasonic waves from a wire bonding stage disposed below the package may not be transmitted easily to the bond between the electrode 112 and the conductive wire 111. In addition, the region of the Peltier element 108 (cooling member 181) that supports the semiconductor element 105 is narrow. Therefore, when bonding the electrode 112 and the conductive wire 111, a load may be applied to the bond between the semiconductor element 105 and the cooling member 181 via the bonding member 109 due to the principle of leverage. Furthermore, temperature unevenness may occur on the surface of the semiconductor element 105.

[0056] Taking the above-mentioned problems into consideration, further examples of the arrangement of the Peltier element 108 (cooling member 181) are shown using Figures 12(a) to 12(f). In Figures 12 to 12(f), in order to reduce the complexity of the drawings, reference numerals are given to only some components of the electronic component 100, but the electronic component 100 has the same configuration as described above.

[0057] 11(c), the electronic component 100 shown in FIG. 12(a) has, in orthogonal projection onto the mounting surface 151, a region R1 in which the Peltier element 108 is disposed that is smaller than a region R3 in which the pixel region 106 of the semiconductor element 105 is disposed. For example, it is assumed that the semiconductor element 105 is approximately 15.5 mm × 11.2 mm (pixel region is 13 mm × 10 mm) and the Peltier element 108 is approximately 6 mm × 6 mm. As described above, this configuration may have problems with wire bonding, bonding strength between the semiconductor element 105 and the cooling member 181, and temperature unevenness.

[0058] In the electronic component 100 shown in FIG. 12(b), the number and thermal resistance of the P-type semiconductors 204p and N-type semiconductors 204n (hereinafter sometimes simply referred to as semiconductors 204) included in the Peltier element 108 are the same as those in the configuration shown in FIG. 12(a). Meanwhile, in the electronic component 100 shown in FIG. 12(b), the size of the base material 201, which serves as a heat sink for the Peltier element 108, in the x and y directions (shown in FIG. 2) is enlarged. In an orthogonal projection onto the mounting surface 151, the outer edge of the Peltier element 108 is wider than the outer edge of the pixel region 106. For example, the outer edge of the Peltier element 108 may be enlarged to a position overlapping the electrode 112. With this configuration, the support area of ​​the semiconductor element 105 by the Peltier element 108 (cooling member 181) can be increased while maintaining the cooling capacity and specific COP of the Peltier element 108 shown in FIG. 12(a). This makes wire bonding easier, and is expected to suppress temperature variations and improve the bonding strength between semiconductor element 105 and cooling member 181.

[0059] In the electronic component 100 shown in FIG. 12(c), the spacing between the semiconductors 204 and the Peltier element 108 shown in FIG. 12(b) is changed. More specifically, the semiconductors 204 are sparsely arranged in the region near the center of the Peltier element 108, while the semiconductors 204 are densely arranged on the outer edge. Even in this case, the cooling capacity, thermal resistance, and relative COP remain the same as those of the Peltier element 108 shown in FIGS. 12(a) and 12(b). Meanwhile, configuring the Peltier element 108 as shown in FIG. 12(c) facilitates wire bonding and reduces temperature variations. Furthermore, densely arranging the semiconductors 204 on the outer edge of the Peltier element 108 ensures strength during wire bonding. This can improve the reliability (e.g., temperature cycle resistance) of the manufactured electronic component 100.

[0060] The electronic component shown in FIG. 12(d) includes multiple Peltier elements 108a and 108b. The Peltier elements 108a and 108b may be smaller than the Peltier elements 108 shown in FIGS. 12(b) and 12(c). The multiple Peltier elements 108a and 108b may be connected in series or in parallel. When the Peltier elements 108a and 108b are connected in series, the current I increases. When the Peltier elements 108a and 108b are connected in parallel, the voltage V increases. While the cross-sectional view shown in FIG. 12(d) illustrates two Peltier elements 108a and 108b, the number of Peltier elements 108 included in the electronic component 100 is not limited to this number; three or more Peltier elements 108 may be included. The configuration shown in FIG. 12(d) facilitates wire bonding and reduces temperature variations. Wire bonding is easy, temperature variations can be suppressed, and the bonding strength between the semiconductor element 105 and the cooling member 181 can be ensured.

[0061] Fig. 12(e) is also a diagram of an electronic component 100 that includes a small Peltier element 108, similar to Fig. 12(a). Compared to the configuration shown in Fig. 12(a), the electronic component 100 shown in Fig. 12(e) includes a heat spreader 205 between the semiconductor element 105 and the cooling member 181. The heat spreader 205 is disposed to promote thermal conduction between the semiconductor element 105 and the cooling member 181, and at the same time, to reinforce the strength of the semiconductor element 105 during wire bonding.

[0062] Heat spreader 205 may be a plate made of, for example, a copper alloy. Heat spreader 205 may be approximately 0.5 mm thick and may be disposed over the entire area below semiconductor element 105. In this case, to prevent electronic component 100 from becoming too thick, semiconductor element 105 may be thinned by back-grinding when manufactured.

[0063] Even with the configuration shown in FIG. 12(e), it is possible to obtain effects such as facilitating wire bonding, suppressing temperature variations, and ensuring bonding strength between the semiconductor element 105 and the cooling member 181.

[0064] 12(f), the electronic component 100 has a Peltier element 108 that is the same size in a plan view as the Peltier element 108 shown in FIG. 12(a), but is taller than the Peltier element 108 shown in FIG. 12(a). If the cross-sectional area of ​​the semiconductor 204 in a direction intersecting the direction in which current flows is the same, the higher the height of the Peltier element 108, the smaller the current I and the larger the voltage V during operation of the Peltier element 108. The smaller the current I, the more the Joule loss in the wiring pattern connected to the Peltier element 108 is reduced. This can reduce the power consumption of the entire electronic component 100.

[0065] 13(a) to 13(c) show examples of the arrangement of semiconductors 204 in Peltier element 108 arranged in electronic component 100 shown in FIG. 12(c). FIG. 13(a) is a top view showing the connection relationship of semiconductors 204 in Peltier element 108. Columnar semiconductors 204 are arranged in an array. The heat-generating side connections shown by solid lines are on the front (or back) side of the drawing, and the heat-absorbing side connections shown by dotted lines are on the back (or front) side of the drawing, connecting semiconductors 204 to each other. Each semiconductor 204 is connected in a single stroke from the electrode connected to power supply charge VDD (electrode 122a shown in FIG. 10) to the electrode connected to ground potential GND (electrode 122b shown in FIG. 10).

[0066] 13(b) shows an example of the arrangement of the semiconductors 204 in the Peltier element 108, in which the semiconductors 204 are arranged in an array, with no semiconductors 204 arranged at the four corners of the array. The arrangement shown in Fig. 13(b) can improve the reliability of the Peltier element 108. This is because the temperature difference between the high-temperature side (heat-generating side) and low-temperature side (heat-absorbing side) of the Peltier element 108 causes thermal expansion on the high-temperature side (heat-generating side) and thermal contraction on the low-temperature side, which generates internal stress in the semiconductors 204, and the parts of the semiconductors 204 where this stress is highest are the four corners of the semiconductors 204.

[0067] In the configuration shown in Figure 13(b), one semiconductor 204 is removed from each corner of the array of semiconductors 204 arranged in an array, but a configuration in which multiple semiconductors 204, such as three or four, are removed from one corner is also possible. Furthermore, the connection between the semiconductors 204 is not limited to the form shown in Figure 13(b), as long as they are connected in a single stroke from the power supply potential VDD to the ground potential GND. Alternatively, as shown in Figure 13(c), a configuration in which semiconductors 204 are provided in parallel and connected in a single stroke from the power supply potential VDD to the ground GND may also be used.

[0068] In the electronic component 100 shown in Fig. 14, a plurality of Peltier elements 108a, 108b are arranged as in the configuration shown in Fig. 12(d). However, unlike the configuration shown in Fig. 12(d), the plurality of Peltier elements 108a, 108b are stacked between the mounting surface 151 and the semiconductor element 105. In this case, the base material 202 of the Peltier element 108a on the semiconductor element 105 side may also serve as the base material 201 of the Peltier element 108b on the base body 101 side. By stacking a plurality of Peltier elements 108, the temperature T c and the temperature of the heat source side T h 14, like FIGS. 12(a) to 12(f), reference numerals are given to only some of the components, but electronic component 100 has the same components as those described above.

[0069] Next, a modified example of the electronic component 100 described above will be described with reference to FIGS. 15, 16(a), and 16(b). In the electronic component 100 described in the embodiment described above, the bonding member 103 bonds the mounting surface 151 of the base 101 to the frame body 102. However, this is not limited thereto. As in the electronic component 100 (package) shown in FIG. 15, the bonding member 103 may bond the side surface 153 of the base 101 to the frame body 102. For example, the side surface 153, which is the outer edge of the base 101, to the inner surface of the frame body 102 may be bonded via the bonding member 103. This allows the entire surface 162, which is the back surface opposite the surface 161 on which the electrodes 122 of the frame body 102 are arranged, to be used as an area on which the electrodes 131 of the LGA or LCC are arranged.

[0070] Furthermore, as shown in FIG. 16( a), the Peltier element 108 may be supplied with power via an electrode 122 provided on the mounting surface 151 of the base 101. The member connecting the Peltier element 108 and the electrode 123 of the base 101 may be a conductive adhesive such as silver paste or solder, instead of the conductive wire 121. Furthermore, as shown in FIG. 16( b), an electrode 132 electrically connected to the electrode 123 may be provided on a surface 152 of the base 101 opposite the mounting surface 151. Separating the formation regions of the electrode 131 connected to the semiconductor element 105 arranged on the frame 102 and the electrode 132 connected to the Peltier element 108 arranged on the base 101 allows, for example, the number of electrodes 131 arranged on a surface 162 of the frame 102 to be reduced. This allows the electronic component 100 to be miniaturized in the X and Y directions. Furthermore, since the inner layer wiring pattern within the frame 102 can be limited to only the wiring pattern corresponding to the semiconductor element 105, the degree of freedom in designing the inner layer wiring pattern can be improved.

[0071] Next, mounting of electronic component 100 on mounting substrate 401 will be described with reference to Figures 17(a), 17(b), and 18(a) to 18(e). In Figures 17(a), 17(b), and 18(a) to 18(e), in order to reduce the complexity of the drawings, reference numerals are given to only some of the components of electronic component 100, but electronic component 100 has the same configuration as described above.

[0072] When the package configuration of electronic component 100 is, for example, an LGA, electronic component 100 is reflow-mounted on a secondary substrate. Here, the secondary substrate is, for example, a mounting substrate 401 such as a printed circuit board (PCB). As described above, in orthogonal projection onto mounting surface 151 of base 101, frame surface 162 includes a portion disposed outside base 101, and electrodes 131 are provided on this portion. Electrodes 131 such as LGA are connected to electrodes provided on mounting substrate 401 via solder 402. As described above, when mounting electronic component 100 (package) on mounting substrate 401, it is necessary to prevent the solder contained in Peltier element 108 from melting and damaging Peltier element 108. For this reason, a material with a low melting point, such as resin-reinforced solder, that can be used in a low-temperature reflow furnace at 200°C or less, or even 180°C or less, is used for solder 402.

[0073] 17(a) 。 In this case, the mounting substrate 401 may have a heat path for heat dissipation through the opening by a member with high thermal conductivity, for example, a carbon graphite sheet 403. With this opening, the Peltier element 108 may be disposed at a position that does not overlap the mounting substrate 401 in orthogonal projection onto the mounting surface 151 of the base 101. However, the opening provided in the mounting substrate 401 is not an essential component.

[0074] Electronic component 100 of this embodiment may be heavy due to the inclusion of Peltier element 108. Therefore, when electronic component 100 is mounted on mounting board 401, solder 402 disposed between electronic component 100 and mounting board 401 may spread beyond a predetermined range, as shown in FIG. 17(b), which may cause a short circuit between adjacent solder pieces 402.

[0075] To prevent the solder 402 from shorting, a spacer 404 may be disposed between the frame 102 and the mounting substrate 401, as shown in FIG. 18( a). Alternatively, for example, as shown in FIG. 18( b), a protrusion 164 that contacts the mounting substrate 401 may be provided on a portion of the surface 162 of the frame 102 that is disposed outside the base 101. The protrusion 164 functions in the same manner as the spacer 404. When a portion of the surface 162 of the frame 102 is protruded, the surface 162 side of the frame 102 can be polished. This can be expected to improve the flatness and parallelism of the frame 102. Alternatively, for example, as shown in FIG. 18( c), a protrusion 405 that contacts the frame 102 may be provided on the mounting substrate 401. The protrusion 405 functions in the same manner as the spacer 404.

[0076] 18(d), a portion of the surface 152 of the base 101 may be in contact with the mounting substrate 401. The mounting substrate 401 is disposed so as to abut against the surface 152 of the base 101, and the base 101 functions as a spacer 404. Furthermore, as shown in FIG. 18(e), the thickness of the region of the base 101 that is in contact with the mounting substrate 401 may be thinner than the thickness of the region of the base 101 that is not in contact with the mounting substrate. This may facilitate, for example, positioning of the electronic component 100 and the mounting substrate 401.

[0077] Next, an electronic component 100' that is a modified example of the electronic component 100 of each of the above-described embodiments will be described with reference to FIGS. 19(a) to 19(c). In the above-described electronic component 100, the heat-generating side of the Peltier element 108 included in the cooling member 181 exists as a heat source other than the semiconductor element 105. Therefore, a structure is provided in which heat from the heat-generating side of the Peltier element 108 is not easily transferred to the semiconductor element 105 via the base 101, the frame 102, and the conductive wire 111. On the other hand, the configuration shown in FIG. 19(a) does not include the base 101. The rest of the configuration may be the same as in each of the above-described embodiments, and the following description will focus on the different configurations, and description of configurations that may be similar will be omitted as appropriate.

[0078] In the configuration shown in FIG. 19(a), the electronic component 100′ includes a cooling member 182, a semiconductor element 105 mounted on a mounting surface 151 of the cooling member 182, and a frame 102 arranged to surround the side surface of the semiconductor element 105. An electrode 112 provided on the semiconductor element 105 is connected to an electrode 113 provided on the frame 102 via a conductive wire 111. The cooling member 182 and the frame 102 are joined by a joining member 103 having a lower thermal conductivity than the cooling member 182. The cooling member 182 includes a cooling member 118. The member 118 may be, for example, a cooling fin such as a heat sink or a heat pipe. In the configuration shown in FIG. 19(a), the cooling member 182 is depicted as including base materials 211 and 212, similar to the cooling member 181. However, depending on the shape of the member 118, the cooling member 182 may not include the base materials 211 and 212. 19(a), the temperature of the cooling member 182 on the side facing the semiconductor element 105 may rise the most. Therefore, by joining the cooling member 182 and the frame 102 with a joining member 103 having a lower thermal conductivity than the cooling member 182, it is possible to suppress the heat flow from the cooling member 182 to the semiconductor element 105 via the frame 102 and the conductive wire 111. The joining member 103 may be a member having a lower thermal conductivity than the frame 102, as described above.

[0079] Furthermore, the member 118 of the cooling member 182 may be a Peltier element, as in the above-described embodiments. The base material 211 (the heat absorption side of the Peltier element 108) and the frame body 102 are joined via a joining member 103. Because there is no thermal conduction path between the heat-generating side of the Peltier element (member 118) and the frame body 102, heat flow from the heat-generating side of the Peltier element 108 to the semiconductor element 105 can be suppressed. Furthermore, the low thermal conductivity of the joining member 103 can prevent the frame body 102 and the optical element 104 from being cooled more than necessary. If the frame body 102 or the optical element 104 is overcooled, condensation may form on the optical element 104 due to the temperature difference with the surrounding environment, which may affect the quality of the resulting image. As shown in FIG. 19( a), joining the cooling member 182 and the frame body 102 using a joining member 103 with low thermal conductivity can prevent such overcooling.

[0080] As shown in FIG. 19(b), a cooling member 181 including a Peltier element 108 and a cooling member 182 may be stacked. The semiconductor element 105 is placed on the mounting surface 151 of the cooling member 182 via the cooling member 181 including the Peltier element 108. In this case, for example, in orthogonal projection onto the mounting surface 151, the outer edge of the cooling member 181 including the Peltier element 108 may be disposed inside the outer edge of the semiconductor element 105. By housing the cooling member 181 inside the frame 102, the electronic component 100 can be made smaller. Also, as shown in FIG. 19(b), the base material 202 of the cooling member 181 and the base material 211 of the cooling member 182 may be the same material. As described above, a Peltier element may be used as the member 118 of the cooling member 182.

[0081] 19(c), electronic component 100′ is mounted on mounting substrate 401 in the same manner as electronic component 100 described above. Mounting substrate 401 may be, for example, a PCB, as described above. Spacers for preventing short circuits between solders 402 may also be provided in the same manner as described above.

[0082] It should be understood that the above-described embodiments can be used in combination with each other as appropriate, and such combinations are also included in the present disclosure.

[0083] Application examples of the electronic components 100 and 100′ according to the above-described embodiments are described below. FIG. 20 is a schematic diagram of an apparatus EQP equipped with the electronic component 100 and 100′. As described above, the electronic component 100 and 100′ are equipped with a semiconductor element 105 provided with a pixel region 106. The electronic component 100 and 100′ include a semiconductor package PKG. The package PKG may include a base 101 to which the semiconductor element 105 is fixed, a frame 102, an optical member 104 such as glass facing the semiconductor element 105, and conductive connecting members such as conductive wires 111 connecting electrodes 113 provided on the frame 102 and the like to electrodes 112 provided on the semiconductor element 105. The apparatus EQP may further include at least one of a control unit CTRL, a processing unit PRCS, a display device DSPL, and a memory device MMRY.

[0084] The optical system OPT forms an image on the pixel region 106 and may be, for example, a lens, a shutter, or a mirror. The control device CTRL controls the operation of the semiconductor element 105 mounted on the electronic component 100 or 100' and may be, for example, a semiconductor device such as an ASIC. The processing device PRCS processes signals output from the semiconductor element 105 mounted on the electronic component 100 or 100' and may be, for example, a semiconductor device such as a CPU or ASIC. The display device DSPL may be an EL display device or a liquid crystal display device that displays data obtained by the semiconductor element 105 mounted on the electronic component 100 or 100'. The memory device MMRY is a magnetic device or a semiconductor device that stores data obtained by the semiconductor element 105 mounted on the electronic component 100 or 100'. The memory device MMRY may be a volatile memory such as an SRAM or a DRAM, or a non-volatile memory such as a flash memory or a hard disk drive. The mechanical device MCHN may have a moving part or a propulsion part such as a motor or an engine. Furthermore, the mechanical device MCHN drives components of the optical system OPT for, for example, zooming, focusing, and shutter operation. The device EQP displays data output from the semiconductor elements 105 mounted on the electronic components 100 and 100' on the display device DSPL and transmits the data to the outside via a communication device (not shown) provided in the device EQP. For this purpose, the device EQP may be provided with a memory device MMRY and a processing device PRCS.

[0085] The device EQP incorporating the electronic components 100 and 100' can be applied to surveillance cameras and on-board cameras mounted on transportation equipment such as automobiles, railroad cars, ships, aircraft, and industrial robots. In addition, the device EQP incorporating the electronic components 100 and 100' can be applied not only to transportation equipment but also to a wide range of equipment that uses object recognition, such as intelligent transport systems (ITS).

[0086] As used herein, expressions such as "A or B," "at least one of A and B," "at least one of A or / and B," and "one or more of A or / and B" include all possible combinations of the listed items unless expressly defined otherwise. That is, the above expressions are understood to disclose all cases, including cases containing at least one A, cases containing at least one B, and cases containing both at least one A and at least one B. This applies equally to combinations of three or more elements.

[0087] Furthermore, the disclosure of this specification includes the complement of the concepts described in this specification. In other words, if this specification contains a statement that "A is greater than B," even if the statement that "A is not greater than B" is omitted, it can be said that this specification discloses that "A is not greater than B." This is because when a statement that "A is greater than B" is made, it is assumed that the case in which "A is not greater than B" is taken into consideration.

[0088] The disclosure of this specification includes the following electronic components and devices:

[0089] (Item 1) An electronic component including a base, a Peltier element, a semiconductor element mounted on a mounting surface of the base via the Peltier element, and a frame disposed so as to surround a side surface of the semiconductor element, a first electrode provided on the semiconductor element is connected to a second electrode provided on the frame via a conductive wire; The electronic component is characterized in that the base and the frame are joined by a joining member having a thermal conductivity lower than that of the base.

[0090] (Item 2) 2. The electronic component according to item 1, further comprising an optical member arranged to cover the semiconductor element and joined to the frame.

[0091] (Item 3) 3. The electronic component according to item 1 or 2, wherein the conductive wire rises from the second electrode at an angle of 10° or less with respect to the normal to the surface of the frame on which the second electrode is arranged.

[0092] (Item 4) 4. The electronic component according to any one of items 1 to 3, wherein the conductive wire has a thermal conductivity of 300 W / mK or less.

[0093] (Item 5) 5. The electronic component according to any one of items 1 to 4, wherein the conductive wire contains aluminum.

[0094] (Item 6) The electronic component described in any one of items 1 to 5, characterized in that the conductive wire is arranged in a direction normal to the surface of the frame on which the second electrode is arranged, so as to reach a position 1 mm or more away from the second electrode.

[0095] (Item 7) 7. The electronic component according to any one of items 1 to 6, wherein the second electrode is disposed at a height between the mounting surface and the semiconductor element.

[0096] (Item 8) a first ball is formed between the conductive wire and the first electrode at a joint between the conductive wire and the first electrode; 8. The electronic component according to any one of items 1 to 7, wherein a second ball is formed between the conductive wire and the second electrode at the joint between the conductive wire and the second electrode.

[0097] (Item 9) 9. The electronic component according to item 8, wherein a stitch is formed on the first ball.

[0098] (Item 10) 10. The electronic component according to any one of items 1 to 9, wherein the substrate contains at least one of alumina and aluminum nitride.

[0099] (Item 11) 11. The electronic component according to any one of items 1 to 10, wherein the frame includes at least one of alumina and aluminum nitride.

[0100] (Item 12) 12. The electronic component according to any one of items 1 to 11, wherein the base body and the frame body are made of the same material.

[0101] (Item 13) 13. The electronic component according to any one of items 1 to 12, wherein the bonding member includes at least one of an epoxy resin, a silicone resin, and an acrylic resin.

[0102] (Item 14) 14. The electronic component according to any one of items 1 to 13, wherein, in an orthogonal projection onto the mounting surface, an outer edge of the Peltier element is disposed inside an outer edge of the semiconductor element.

[0103] (Item 15) 15. The electronic component according to any one of items 1 to 14, wherein the semiconductor element has a pixel region in which a plurality of pixels are arranged.

[0104] (Item 16) Item 16. The electronic component according to item 15, wherein, in an orthogonal projection onto the mounting surface, the outer edge of the Peltier element is disposed inside the outer edge of the pixel region.

[0105] (Item 17) Item 16. The electronic component according to item 15, wherein, in an orthogonal projection onto the mounting surface, the outer edge of the pixel region is disposed inside the outer edge of the Peltier element.

[0106] (Item 18) 18. The electronic component according to any one of items 1 to 17, wherein a plurality of Peltier elements including the Peltier element are arranged between the mounting surface and the semiconductor element.

[0107] (Item 19) Item 19. The electronic component according to item 18, wherein the plurality of Peltier elements are stacked between the mounting surface and the semiconductor element.

[0108] (Item 20) the frame includes a first surface on which the second electrode is disposed and a second surface opposite to the first surface, and in an orthogonal projection onto the mounting surface, the second surface includes a portion disposed outside the base; A third electrode is provided in the portion, 20. The electronic component according to any one of items 1 to 19, wherein the third electrode is connected to a fourth electrode provided on a mounting substrate via solder.

[0109] (Item 21) 21. The electronic component according to item 20, wherein the portion is provided with a protrusion that contacts the mounting board.

[0110] (Item 22) 22. The electronic component according to item 20 or 21, wherein a portion of the base is in contact with the mounting board.

[0111] (Item 23) 23. The electronic component according to item 22, wherein the thickness of the region of the base that is in contact with the mounting board is thinner than the thickness of the region of the base that is not in contact with the mounting board.

[0112] (Item 24) 24. The electronic component according to any one of items 20 to 23, wherein the Peltier element is disposed at a position that does not overlap the mounting board in an orthogonal projection onto the mounting surface.

[0113] (Item 25) 25. The electronic component according to any one of items 1 to 24, wherein the joining member joins a side surface of the base body to the frame body.

[0114] (Item 26) the Peltier element receives power via a fifth electrode provided on the placement surface; Item 26. The electronic component according to item 25, wherein a sixth electrode connected to the fifth electrode is provided on the surface of the base opposite the mounting surface.

[0115] (Item 27) An electronic component including a cooling member, a semiconductor element placed on a mounting surface of the cooling member, and a frame body arranged to surround a side surface of the semiconductor element, a first electrode provided on the semiconductor element is connected to a second electrode provided on the frame via a conductive wire; The electronic component is characterized in that the cooling member and the frame are joined by a joining member having a thermal conductivity lower than that of the cooling member.

[0116] (Item 28) 28. The electronic component according to item 27, further comprising an optical member arranged to cover the semiconductor element and bonded to the frame.

[0117] (Item 29) Peltier elements are also arranged, 29. The electronic component according to item 27 or 28, wherein the semiconductor element is placed on the mounting surface of the cooling member via the Peltier element.

[0118] (Item 30) the frame includes a first surface on which the second electrode is disposed and a second surface opposite to the first surface, and in an orthogonal projection onto the mounting surface, the second surface includes a portion disposed outside the cooling member; A third electrode is provided in the portion, 30. The electronic component according to any one of items 27 to 29, wherein the third electrode is connected to a fourth electrode provided on a mounting substrate via solder.

[0119] (Item 31) Item 31. The electronic component according to item 30, wherein the portion is provided with a protrusion that contacts the mounting board.

[0120] (Item 32) An electronic component according to any one of items 1 to 31; a processing device that processes a signal output from the electronic component; An apparatus characterized by comprising:

[0121] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0122] 100: electronic component, 101: base body, 102: frame body, 103: joining member, 105: semiconductor element, 108: Peltier element, 111: conductive wire, 112, 113: electrodes, 151: mounting surface

Claims

1. An electronic component including a base, a Peltier element, a semiconductor element mounted on a mounting surface of the base via the Peltier element, and a frame disposed so as to surround a side surface of the semiconductor element, a first electrode provided on the semiconductor element is connected to a second electrode provided on the frame via a conductive wire; The electronic component is characterized in that the base and the frame are joined by a joining member having a thermal conductivity lower than that of the base.

2. 2. The electronic component according to claim 1, further comprising an optical member disposed so as to cover the semiconductor element and joined to the frame.

3. 2. The electronic component according to claim 1, wherein the conductive wire rises from the second electrode at an angle of 10 degrees or less with respect to a normal to a surface of the frame on which the second electrode is disposed.

4. 2. The electronic component according to claim 1, wherein the conductive wire has a thermal conductivity of 300 W / mK or less.

5. 2. The electronic component according to claim 1, wherein the conductive wire comprises aluminum.

6. 2. The electronic component according to claim 1, wherein the conductive wire is arranged in a direction normal to the surface of the frame on which the second electrode is arranged, so as to reach a position 1 mm or more from the second electrode.

7. 2. The electronic component according to claim 1, wherein the second electrode is disposed at a height between the mounting surface and the semiconductor element.

8. a first ball is formed between the conductive wire and the first electrode at a joint between the conductive wire and the first electrode; 2. The electronic component according to claim 1, wherein a second ball is formed between the conductive wire and the second electrode at a joint between the conductive wire and the second electrode.

9. 9. The electronic component according to claim 8, wherein a stitch is formed on the first ball.

10. 2. The electronic component according to claim 1, wherein the substrate includes at least one of alumina and aluminum nitride.

11. 2. The electronic component according to claim 1, wherein the frame includes at least one of alumina and aluminum nitride.

12. 2. The electronic component according to claim 1, wherein the base body and the frame body are made of the same material.

13. 2. The electronic component according to claim 1, wherein the bonding material includes at least one of an epoxy resin, a silicone resin, and an acrylic resin.

14. 2. The electronic component according to claim 1, wherein an outer edge of the Peltier element is disposed inside an outer edge of the semiconductor element in an orthogonal projection onto the mounting surface.

15. 2. The electronic component according to claim 1, wherein the semiconductor element comprises a pixel region in which a plurality of pixels are arranged.

16. 16. The electronic component according to claim 15, wherein an outer edge of the Peltier element is disposed inside an outer edge of the pixel region in an orthogonal projection onto the mounting surface.

17. 16. The electronic component according to claim 15, wherein, in an orthogonal projection onto the mounting surface, an outer edge of the pixel region is disposed inside an outer edge of the Peltier element.

18. 2. The electronic component according to claim 1, wherein a plurality of Peltier elements including the Peltier element are disposed between the mounting surface and the semiconductor element.

19. 19. The electronic component according to claim 18, wherein the plurality of Peltier elements are stacked between the mounting surface and the semiconductor element.

20. the frame includes a first surface on which the second electrode is disposed and a second surface opposite to the first surface, and in an orthogonal projection onto the mounting surface, the second surface includes a portion disposed outside the base; A third electrode is provided in the portion, 2. The electronic component according to claim 1, wherein the third electrode is connected to a fourth electrode provided on a mounting substrate via solder.

21. 21. The electronic component according to claim 20, wherein the portion is provided with a protrusion that contacts the mounting board.

22. 21. The electronic component according to claim 20, wherein a portion of the base body is in contact with the mounting board.

23. 23. The electronic component according to claim 22, wherein a thickness of the base in a region that is in contact with the mounting substrate is thinner than a thickness of the base in a region that is not in contact with the mounting substrate.

24. 21. The electronic component according to claim 20, wherein the Peltier element is disposed at a position that does not overlap the mounting board in an orthogonal projection onto the mounting surface.

25. 2. The electronic component according to claim 1, wherein the joining member joins a side surface of the base body to the frame body.

26. the Peltier element is supplied with power via a fifth electrode provided on the placement surface; 26. The electronic component according to claim 25, wherein a sixth electrode connected to the fifth electrode is provided on a surface of the base opposite to the mounting surface.

27. An electronic component including a cooling member, a semiconductor element placed on a mounting surface of the cooling member, and a frame body arranged to surround a side surface of the semiconductor element, a first electrode provided on the semiconductor element is connected to a second electrode provided on the frame via a conductive wire; The electronic component is characterized in that the cooling member and the frame are joined by a joining member having a thermal conductivity lower than that of the cooling member.

28. 28. The electronic component according to claim 27, further comprising an optical member disposed so as to cover the semiconductor element and bonded to the frame.

29. Peltier elements are also arranged, 28. The electronic component according to claim 27, wherein the semiconductor element is placed on the placement surface of the cooling member via the Peltier element.

30. the frame includes a first surface on which the second electrode is disposed and a second surface opposite to the first surface, and the second surface includes a portion that is disposed outside the cooling member in an orthogonal projection onto the mounting surface; A third electrode is provided in the portion, 28. The electronic component according to claim 27, wherein the third electrode is connected to a fourth electrode provided on a mounting substrate via solder.

31. 31. The electronic component according to claim 30, wherein the portion is provided with a protrusion that contacts the mounting board.

32. An electronic component according to any one of claims 1 to 31; a processing device that processes a signal output from the electronic component; An apparatus characterized by comprising:

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