Vapor deposition mask and method for manufacturing organic light-emitting device

Abstract

To provide a technology that reduces vignetting and blur of vapor deposition of a vapor deposition mask at the time of vapor deposition.SOLUTION: A vapor deposition mask formed of a nonmagnetic substance includes: openings formed in a surface of the vapor deposition mask facing a substrate while corresponding to a vapor deposition pattern to be deposited on the substrate; and a structure made of a magnetic substance and formed between the openings in the surface facing the substrate of the vapor deposition mask.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to a deposition mask for vacuum-depositing a desired pattern onto a substrate, and a method for manufacturing an organic light-emitting element using the deposition mask. [Background technology]

[0002] Organic light-emitting devices have been attracting attention as light-emitting devices capable of emitting high-luminance light by low-voltage driving. Organic light-emitting devices are generally formed on a substrate with a multi-layer structure including an anode, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode. Methods for forming this multi-layer structure include a vacuum deposition method on a substrate using evaporation or sublimation, and a film formation method using inkjet or spin coating in which an organic material is dissolved in a solvent. Among these, a vacuum deposition method using a patterned mask is generally used for forming a multi-layer structure using a low-molecular-weight material. In the vacuum deposition method, a deposition mask having a desired pixel opening pattern is placed between the substrate and a heating unit for the deposition material to form a desired pattern on the substrate, and a film is formed.

[0003] In recent years, there has been a demand for high-definition organic light-emitting devices. To achieve high-definition organic light-emitting devices, it is necessary to bring the substrate and the deposition mask very close to each other and reduce deposition blurring and deposition vignetting during deposition. Deposition blurring is when the deposition material is formed over a wide area beyond the desired deposition range. For this, the distance between the substrate and the deposition mask is important. Even if the substrate and the deposition mask can be placed in the expected positional relationship during deposition, deposition blurring is caused in the central part of the deposition mask, etc., because the crosspieces that define the pixel openings are deflected by the weight of the mask. In addition, deposition vignetting occurs when the deposition range is scraped off due to the influence of the thickness of the crosspieces and frame of the deposition mask. In order to reduce the influence of deposition blurring and deposition vignetting, it is necessary to make the crosspieces and frame thin.

[0004] In order to realize high definition in pixel units required for organic EL and the like, it is necessary to make the deposition mask thin and to make the distance between the deposition mask and the substrate close to a few μm or less. For this purpose, when a magnetic mask is used, a method has been proposed in which a magnet is placed on the back surface of the substrate and the magnetic mask is attracted to the substrate by magnetic force. In addition, when a non-magnetic mask such as Si or resin is used, as described in Patent Document 1, there is a method in which a magnetic member is placed on the side opposite to the substrate side of the non-magnetic mask to attract the non-magnetic mask to the substrate. In addition, as described in Patent Document 2, a method has also been proposed in which a magnetic film is formed on the surface of the non-magnetic mask on the side that is to be brought into close contact with the substrate, and the non-magnetic mask is attracted to the substrate. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2006-199998 A [Patent Document 2] JP 2006-233286 A Summary of the Invention [Problem to be solved by the invention]

[0006] However, to achieve high definition on a pixel-by-pixel basis using a non-magnetic deposition mask, in order to maintain the strength of the entire deposition mask, it is necessary to provide a thick mask portion around the opening of the chip, or to provide pixel-by-pixel openings within the chip. Also, in order to prevent deposition vignetting during deposition, it is necessary to thin the thickness of the mask portion where the pixel-by-pixel openings are provided.

[0007] In the non-magnetic deposition mask having such a configuration, Patent Document 1 employs a configuration in which a magnetic member having a shape corresponding to the opening is attracted to the substrate side by a magnet, and the non-magnetic mask is pressed against the substrate. However, although the thick mask part of the opening can be attracted to the substrate side by the magnet, the thin film mask part bends under its own weight, causing deposition blurring.

[0008] Also, in Patent Document 2, a configuration is adopted in which a magnetic film is provided on the surface of a mask around a non-magnetic opening, and the magnetic film is attracted by a magnet. However, as in Patent Document 1, although the thick mask part of the opening can be attracted to the substrate side by the magnet, the thin mask part bends under its own weight, causing deposition blurring.

[0009] The technology of the present disclosure has been made in view of the above, and has an object to provide a technology for reducing deposition vignetting and deposition blurring of a deposition mask during deposition. [Means for solving the problem]

[0010] In order to achieve the above object, a deposition mask according to the present disclosure includes a deposition mask made of a non-magnetic material, the deposition mask being characterized in that openings corresponding to a deposition pattern to be deposited on the substrate are formed in a surface of the deposition mask facing a substrate, and a structure made of a magnetic material is formed between the openings on the surface of the deposition mask facing the substrate.

[0011] In order to achieve the above object, a method for producing an organic light-emitting element according to the present disclosure includes a method for producing an organic light-emitting element, characterized in that an organic compound layer constituting an organic light-emitting element is formed using the above deposition mask. In order to achieve the above object, a display device according to the present disclosure includes a display device including an organic light-emitting element having an organic compound layer formed using the above deposition mask. In order to achieve the above object, an imaging device according to the present disclosure includes an imaging device including an organic light-emitting element having an organic compound layer formed using the above deposition mask. In order to achieve the above object, an electronic device according to the present disclosure includes an electronic device including an organic light-emitting element having an organic compound layer formed using the above deposition mask. In order to achieve the above object, a lighting device according to the present disclosure includes a lighting device including an organic light-emitting element having an organic compound layer formed using the above deposition mask. In order to achieve the above object, a moving object according to the present disclosure includes a moving object equipped with an organic light-emitting element having an organic compound layer formed using the above deposition mask. Effect of the Invention

[0012] According to the present invention, a magnetic structure formed in a portion of the deposition mask where the mask pressure is low is attracted to a magnet, and the mask can be closely attached to the substrate without bending. This reduces deposition vignetting and deposition blurring, and is expected to improve yield reduction. [Brief description of the drawings]

[0013] [Figure 1] 1 is a cross-sectional view illustrating deposition vignetting and deposition blur of a deposition mask; [Diagram 2] 1A to 1C are diagrams illustrating a method for manufacturing a deposition mask according to an embodiment of the present invention; [Diagram 3] 1 is a cross-sectional view of a deposition mask according to an embodiment; [Figure 4] FIG. 1 is a plan view of a deposition mask according to an embodiment; [Diagram 5] FIG. 1 is an explanatory diagram for evaluating deposition blur of a deposition mask according to an embodiment. [Figure 6] FIG. 1 is a diagram illustrating an example of a display device having an organic light-emitting element according to an embodiment. [Figure 7] FIG. 1 is a diagram illustrating an example of a display device having an organic light-emitting element according to an embodiment. [Figure 8] FIG. 1 is a diagram showing an example of a display device and an electronic device having an organic light-emitting element according to an embodiment. [Figure 9] FIG. 1 is a schematic diagram illustrating an example of a display device having an organic light-emitting element according to an embodiment. [Figure 10]FIG. 1 is a diagram illustrating an example of a lighting device having an organic light-emitting element according to an embodiment and a moving object; [Figure 11] FIG. 1 is a schematic diagram showing an example of glasses having an organic light-emitting element according to an embodiment; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. Note that the present disclosure is not limited to the following embodiment, and can be modified as appropriate without departing from the gist of the present disclosure. In addition, in the drawings described below, parts having the same functions are given the same reference numerals, and their description may be omitted or simplified.

[0015] First Embodiment First, the deposition mask used in the first embodiment will be described. The deposition mask used in this embodiment is used for the purpose of forming a desired pattern on a substrate by a vacuum deposition method. In the deposition mask of the prior art, a mask using a magnetic metal is used, but due to the limit of processing accuracy of processing methods such as wet etching processing and electroforming processing, it is difficult to process thin and highly accurate. For this reason, masks using non-magnetic materials such as resin and silicon have been developed, but the members used in the deposition mask according to the embodiment of the present disclosure are not particularly limited. Furthermore, the member may form a deposition mask alone, or a plurality of members may be combined.

[0016] Next, deposition vignetting occurring in a deposition mask will be described with reference to Fig. 1A. Fig. 1A shows a cross-sectional view of a deposition mask during deposition. A deposition film 103 is formed on a substrate 101 by the deposition material evaporated from an evaporation source 105 passing through an opening 104 of a deposition mask 102. At that time, the deposition material evaporated from the evaporation source 105 is in the shadow of the end of the deposition mask 102 on the evaporation source 105 side, and the film thickness at the end of the deposition film 103 becomes thin, causing film thickness unevenness. This is called deposition vignetting. The deposition vignetting becomes larger as the thickness of the deposition mask 102 increases.

[0017] Also, with reference to FIG. 1B, deposition blurring occurring in a deposition mask will be described. FIG. 1B shows a cross-sectional view of a deposition mask during deposition. A deposition film is formed on a substrate 101 by a deposition material evaporated from an evaporation source 105 passing through an opening 104 of a deposition mask 102. At that time, if the gap 106 between the deposition material evaporated from the evaporation source 105 and the deposition mask 102 on the substrate 101 side is large, the deposition material wraps around onto the substrate 101. As in the deposition film 107, the deposition material is formed over a wider area than the opening 104. Such deposition material formed over an area exceeding the desired deposition area is called deposition blurring.

[0018] As described below, the deposition mask according to this embodiment is expected to reduce deposition vignetting and deposition blurring during deposition.

[0019] As an example of a method for manufacturing a non-magnetic silicon deposition mask in this embodiment, a method for processing an SOI (Silicon on Insulator) wafer can be mentioned. Note that the method for manufacturing a deposition mask according to the embodiment of the present disclosure is not limited to these manufacturing methods. FIG. 2A shows an example of a silicon deposition mask according to this embodiment. As shown in FIG. 2A, here, of the two Si layers in the SOI wafer, the thick layer is called the Si support layer 200 and the thin layer is called the Si functional layer 201, and the surface side of the SOI wafer is the Si functional layer 201. In addition, a silicon oxide layer 202 is sandwiched between the two Si layers 200 and 201.

[0020] The method for producing the deposition mask will be described more specifically with reference to FIGS. 2B to 2I. (1) As shown in FIG. 2B, a first resist pattern 203 having holes for passing a deposition material and forming a deposition layer of a desired size is formed on a Si functional layer 201 on the surface of an SOI wafer by photolithography. (2) Next, as shown in Fig. 2C, the Si functional layer 201 on the surface of the SOI wafer is dry etched to form a first Si hole 204 to which the first resist pattern 203 is transferred. At this time, the silicon oxide layer 202 formed under the Si functional layer 201 functions as an etching stop layer. (3) Next, as shown in FIG. 2D, the first resist pattern 203 is removed by oxygen plasma ashing. (4) Next, as shown in FIG. 2E, in order to protect the first Si holes 204 formed in the SOI wafer surface, a resist is applied to the SOI wafer surface to form a protective layer 205. (5) Next, as shown in Fig. 2F, a second resist pattern 206 having a size corresponding to the aggregate of the first Si holes 204 is formed on the Si support layer 200 on the back surface of the SOI wafer by photolithography. Here, the aggregate size of the first Si holes corresponds to, for example, the size of one display device chip. (6) Next, as shown in Fig. 2G, the Si support layer 200 on the back surface of the SOI wafer is dry etched to form second Si holes 207 to which the second resist pattern is transferred. In this case, the silicon oxide layer 202 also functions as an etching stop layer. (7) Next, as shown in Fig. 2H, wet etching is performed using buffered hydrofluoric acid to etch the silicon oxide layer 202. At this time, the size of the etched silicon oxide layer 202 becomes the size of the second Si hole formed on the back surface of the SOI wafer. (8) Next, as shown in FIG. 2I, the second resist pattern 208 is removed by an organic wet process, thereby completing the deposition mask 210.

[0021] Next, a structure made of a magnetic material used in the embodiment of the present disclosure will be described. As shown in Fig. 3, a structure made of a magnetic material 305 is formed on the mask surface in a recess 303 on the side of the deposition mask 210 facing the substrate 211.

[0022] The material of the magnetic structure 305 is not particularly limited as long as it is a magnetic material. It is preferably selected from cobalt (Co), iron (Fe), nickel (Ni), and materials containing these. Specifically, the structure 305 can be formed by using Ni-Fe-P, Co-Ni-P, or the like, by electroless plating or vacuum sputtering.

[0023] Here, the shape and size of the structure 305 will be described. As shown in FIG. 3, the deposition mask 210 has the structure 305 on the surface facing the substrate 211. The structure 305 is formed of a magnetic body made of the above-mentioned material. Also, as shown in FIG. 3, the deposition mask 210 has a recess 303 whose bottom surface is the surface facing the substrate 211. Also, as shown in FIG. 3, a plurality of openings 304 are formed in the bottom surface of the recess 303, and the mask thickness of the recess 303 is formed to be thinner than the mask thickness of the peripheral portion of the recess 303.

[0024] 4A shows a plan view of an example of a deposition mask 210 according to this embodiment when viewed from the opposite side to the side where the substrate 211 in Fig. 3 is located. As shown in Fig. 4A, a plurality of recesses 303 are formed in the deposition mask 210. In a top view of the deposition mask 210, the intervals and shapes of the recesses 303 may be appropriately determined depending on the deposition pattern.

[0025] Fig. 4B shows a plan view of a part of the deposition mask 210 shown in Fig. 4A when viewed from the side where the substrate 211 in Fig. 3 is located. As shown in Fig. 4B, a plurality of openings 304 and structures 305 are formed in each recess 303. Each structure 305 is formed between the openings so as to surround the corresponding opening 304.

[0026] In the example of FIG. 4B, the structure 305 is formed as a cylindrical structure according to the shape of the opening 304, but the shape of the structure 305 is not limited to this. Examples of the shape of the structure 305 include a circle, a semicircle, an ellipse, a polygon, etc., when viewed from above the deposition mask 210. The shape of the structure 305 in a side view of the deposition mask 210 may be cylindrical, bell-shaped, or the like, but the shape of the structure 305 is not limited to these shapes.

[0027] In addition, as shown in FIG. 3, when the substrate 211 and the deposition mask 210 are brought into close contact with each other, the structure 305 made of a magnetic material formed in the recess 303 is attracted by the magnet 301, thereby ensuring close contact between the recess 303 and the substrate 211.

[0028] [Structure of organic light-emitting element] Next, an organic light-emitting element manufactured using the deposition mask 210 in this embodiment will be described. In this embodiment, the organic light-emitting element is provided by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode on a substrate. A protective layer, a color filter, a microlens, and the like may be provided on the cathode. When a color filter is provided, a planarizing layer may be provided between the protective layer. The planarizing layer may be made of acrylic resin or the like. The same applies when a planarizing layer is provided between the color filter and the microlens.

[0029] [substrate] The material of the substrate constituting the organic light-emitting element may be at least one of quartz, glass, silicon, resin, and metal. In addition, a switching element such as a transistor and wiring may be provided on the substrate, and an insulating layer may be provided thereon. As the insulating layer, any material may be used as long as it can form a contact hole so that wiring can be formed between the first electrode and the insulating layer, and insulation from wiring that is not connected can be ensured. For example, resin such as polyimide, silicon oxide, silicon nitride, etc. may be used.

[0030] [electrode] A pair of electrodes can be used for the organic light-emitting element. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with a higher potential is the anode, and the other is the cathode. It can also be said that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode.

[0031] The material constituting the anode should have as large a work function as possible. For example, a metal such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, or tungsten, or a mixture containing these metals, can be used for the anode. Alternatively, an alloy combining these metals, or a metal oxide such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), or indium zinc oxide can be used for the anode. Also, a conductive polymer such as polyaniline, polypyrrole, or polythiophene can be used for the anode.

[0032] Any of these electrode materials may be used alone, or two or more of these materials may be used in combination. The anode may be composed of a single layer or multiple layers.

[0033] When the electrode of the organic light-emitting element is configured as a reflective electrode, the electrode material may be, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, or an alloy or laminate thereof. The above materials may function as a reflective film without serving as an electrode. When used as a transparent electrode, a transparent conductive layer of oxide such as indium tin oxide (ITO) or indium zinc oxide may be used, but is not limited to these. Photolithography technology may be used to form the electrode.

[0034] On the other hand, the material constituting the cathode should have a small work function. For example, alkali metals such as lithium, alkaline earth metals such as calcium, aluminum, titanium, manganese, and silver. Examples of the electrode material include metals such as lead, chromium, and the like, or mixtures containing these metals. Alternatively, alloys combining these metals can be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, zinc-silver, and the like can be used. Metal oxides such as indium tin oxide (ITO) can also be used. These electrode materials may be used alone or in combination of two or more types. The cathode may have a single layer structure or a multi-layer structure. Among these, it is preferable to use silver, and it is even more preferable to use a silver alloy in order to reduce the aggregation of silver. The ratio of the alloy is not important as long as the aggregation of silver can be reduced. For example, the ratio of silver to other metals may be 1:1, 3:1, etc.

[0035] The cathode may be a top emission element using an oxide conductive layer such as ITO, or a bottom emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. The method for forming the cathode is not particularly limited, but it is more preferable to use a direct current or alternating current sputtering method, etc., since the film coverage is good and the resistance can be easily reduced.

[0036] [Pixel isolation layer] The pixel separation layer is formed of a silicon nitride (SiN) film, a silicon oxynitride (SiON) film, or a silicon oxide (SiO) film formed by chemical vapor deposition (CVD). In order to increase the resistance of the organic compound layer in the in-plane direction, it is preferable that the organic compound layer, particularly the hole transport layer, is formed thinly on the sidewall of the pixel separation layer. Specifically, the thickness of the sidewall can be thinned by increasing the taper angle of the sidewall of the pixel separation layer or the thickness of the pixel separation layer to increase vignetting during deposition.

[0037] On the other hand, it is preferable to adjust the sidewall taper angle and film thickness of the pixel separation layer to such an extent that no voids are formed in the protective layer formed thereon. Since no voids are formed in the protective layer, the occurrence of defects in the protective layer can be reduced. Since the occurrence of defects in the protective layer is reduced, deterioration in reliability such as the occurrence of dark spots and poor conduction of the second electrode can be reduced.

[0038] According to this embodiment, even if the taper angle of the sidewall of the pixel separation layer is not steep, it is possible to effectively suppress charge leakage to adjacent pixels. As a result of the study by the inventors of the present application, it was found that the charge leakage can be sufficiently reduced if the taper angle is in the range of 60 degrees or more and 90 degrees or less. The thickness of the pixel separation layer is preferably 10 nm or more and 150 nm or less. In addition, the same effect can be obtained even if the pixel electrode is composed only of a pixel electrode without a pixel separation layer. However, in this case, it is preferable that the thickness of the pixel electrode is half or less than that of the organic layer, or the pixel electrode end is forward tapered to less than 60 degrees, since this reduces short circuits of the organic light-emitting element.

[0039] [Organic compound layer] The organic compound layer of the organic light-emitting element may be formed as a single layer or multiple layers. When multiple layers are included, they may be called hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, or electron injection layer depending on their functions. The organic compound layer is mainly composed of organic compounds, but may also contain inorganic atoms or inorganic compounds. For example, it may contain copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, or the like. The organic compound layer may be disposed between the first electrode and the second electrode, or may be disposed in contact with the first electrode and the second electrode.

[0040] [Protective layer] In the organic light-emitting device of this embodiment, a protective layer may be provided on the second electrode. For example, by bonding glass provided with a moisture absorbent on the second electrode, it is possible to reduce the intrusion of water or the like into the organic compound layer and reduce the occurrence of display defects. In another embodiment, a protective layer may be provided on the cathode. A passivation film such as silicon nitride may be provided to reduce the infiltration of water into the organic compound layer. For example, after forming the cathode, the cathode may be transported to another chamber without breaking the vacuum, and a silicon nitride film having a thickness of 2 μm may be formed by the CVD method to serve as a protective layer. A protective layer may be provided using the atomic deposition method (ALD method) after the film is formed by the CVD method. The material of the film formed by the ALD method is not limited, and may be silicon nitride, silicon oxide, aluminum oxide, or the like. Silicon nitride may be further formed by the CVD method on the film formed by the ALD method. The film formed by the ALD method may have a smaller thickness than the film formed by the CVD method. Specifically, the thickness may be 50% or less, or even 10% or less.

[0041] [Color Filter] In the organic light-emitting element of this embodiment, a color filter may be provided on the protective layer. For example, a color filter taking into consideration the size of the organic light-emitting element may be provided on another substrate and then bonded to the substrate on which the organic light-emitting element is provided, or a color filter may be patterned on the protective layer described above using a photolithography technique. The color filter may be made of a polymer.

[0042] [Planarization layer] In the organic light-emitting element of this embodiment, a planarization layer may be provided between the color filter and the protective layer. The planarization layer is provided for the purpose of reducing the unevenness of the layer below. In addition, when the purpose is not limited, the planarization layer may be called a resin layer. The planarization layer may be composed of an organic compound, and may be a low molecular weight or a high molecular weight, but is preferably a high molecular weight.

[0043] The planarization layer may be provided above and below the color filter, and may be made of the same or different materials.Specific examples of the materials include polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0044] [Microlens] The organic light-emitting element may have an optical member such as a microlens on its light-emitting side. The microlens may be made of acrylic resin, epoxy resin, or the like. The microlens may be intended to increase the amount of light extracted from the organic light-emitting element and control the direction of the extracted light. The microlens may have a hemispherical shape. When the microlens has a hemispherical shape, among the tangents to the hemisphere, there is a tangent that is parallel to the insulating layer, and the tangent and the hemisphere are the vertices of the microlens. The vertex of the microlens can be determined in the same manner in any cross-sectional view. That is, among the tangents to the semicircle of the microlens in the cross-sectional view, there is a tangent that is parallel to the insulating layer, and the tangent and the semicircle are the vertices of the microlens.

[0045] It is also possible to define the midpoint of the microlens. In the cross section of the microlens, a line segment is imaginary from a point where an arc shape ends to a point where another arc shape ends, and the midpoint of the line segment can be called the midpoint of the microlens. The cross section for determining the vertex and midpoint may be a cross section perpendicular to the insulating layer.

[0046] The microlens has a first surface having a convex portion and a second surface opposite to the first surface. It is preferable that the second surface is disposed closer to the functional layer than the first surface. To achieve such a configuration, it is necessary to form a microlens on the light-emitting element. When the functional layer is an organic layer, it is preferable to avoid processes that result in high temperatures in the manufacturing process. In addition, when the second surface is disposed closer to the functional layer than the first surface, it is preferable that the glass transition temperatures of all organic compounds constituting the organic layer are 100°C or higher, and more preferably 130°C or higher.

[0047] [Opposite substrate] The organic light-emitting device of this embodiment may have an opposing substrate on the planarization layer. The opposing substrate is called an opposing substrate because it is provided at a position corresponding to the above-mentioned substrate. The constituent material of the opposing substrate may be the same as that of the above-mentioned substrate. When the above-mentioned substrate is the first substrate, the opposing substrate can be the second substrate.

[0048] [Organic layer] The organic compound layers (hole injection layer, hole transport layer, electron blocking layer, light emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light emitting device of this embodiment are formed by the method shown below.

[0049] The organic compound layer constituting the organic light-emitting device of this embodiment can be formed by a dry process such as a vacuum deposition method, an ionization deposition method, a sputtering method, a plasma method, etc. Also, instead of a dry process, a wet process can be used in which a layer is formed by dissolving the compound in an appropriate solvent and applying a known coating method (e.g., spin coating, dipping, casting method, LB method, inkjet method, etc.).

[0050] Here, when the layer is formed by a vacuum deposition method or a solution coating method, crystallization is unlikely to occur and the layer has excellent stability over time. When the layer is formed by a coating method, the layer can be formed by combining with a suitable binder resin.

[0051] Examples of binder resins include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, urea resin, etc. Furthermore, these binder resins may be used alone as homopolymers or copolymers, or may be used in combination of two or more types. Furthermore, known additives such as plasticizers, antioxidants, and ultraviolet absorbers may be used in combination as necessary.

[0052] [Pixel circuit] The light-emitting device having the organic light-emitting element of this embodiment may have a pixel circuit connected to the organic light-emitting element. The pixel circuit may be an active matrix type that controls the emission of the first organic light-emitting element and the second organic light-emitting element independently. The active matrix type circuit may be voltage programming or current programming. The drive circuit has a pixel circuit for each pixel. The pixel circuit may have an organic light-emitting element, a transistor that controls the emission luminance of the organic light-emitting element, a transistor that controls the emission timing, a capacitance that holds the gate voltage of the transistor that controls the emission luminance, and a transistor for connecting to GND without passing through the light-emitting element.

[0053] The light emitting device has a display region and a peripheral region arranged around the display region. The display region has a pixel circuit, and the peripheral region has a display control circuit. The mobility of a transistor constituting the pixel circuit may be smaller than the mobility of a transistor constituting the display control circuit. The slope of the current-voltage characteristic of the transistor constituting the pixel circuit may be smaller than the slope of the current-voltage characteristic of the transistor constituting the display control circuit. The slope of the current-voltage characteristic can be measured by the so-called Vg-Ig characteristic. The transistor constituting the pixel circuit is a transistor connected to a light emitting element such as a first organic light emitting element.

[0054] [Pixels] The organic light-emitting element of this embodiment has a plurality of pixels. Each pixel has sub-pixels that emit different colors. The sub-pixels may have, for example, RGB emission colors. The pixels emit light in an area also called a pixel aperture. This area is the same as the first area. The pixel aperture may be 15 μm or less, or 5 μm or more. More specifically, the pixel aperture may be 11 μm or less. , 9.5 μm, 7.4 μm, 6.4 μm, etc. The distance between the sub-pixels may be 10 μm or less, specifically, 8 μm, 7.4 μm, 6.4 μm.

[0055] The pixels may have a known arrangement in a plan view. For example, the arrangement may be a stripe arrangement, a delta arrangement, a pentile arrangement, or a Bayer arrangement. The shape of the sub-pixels in a plan view may be any known shape. For example, a rectangle, a quadrangle such as a diamond, or a hexagon. Note that the shape of the sub-pixel is considered to be included in the rectangle if it is, for example, close to a rectangle. Therefore, the shape of the sub-pixel may be a shape that is close to any of the known shapes described above. A pixel may be configured by combining the shape of the sub-pixels and the pixel arrangement.

[0056] [Applications of organic light-emitting devices] The organic light-emitting element according to the present embodiment can be used as a component of a display device or a lighting device. Other uses of the organic light-emitting element include an exposure light source for an electrophotographic image forming device, a backlight for a liquid crystal display device, and a light-emitting device having a white light source and a color filter.

[0057] The display device may be an image information processing device having an image input unit that inputs image information from an area CCD, a linear CCD, a memory card, etc., an information processing unit that processes the input information, and displays the input image on a display unit.

[0058] The display unit of the imaging device or inkjet printer may have a touch panel function. The driving method of the touch panel function may be an infrared type, a capacitance type, a resistive film type, or an electromagnetic induction type, and is not particularly limited. The display device may be used in the display unit of a multifunction printer.

[0059] Next, a display device including an organic light-emitting element according to this embodiment will be described with reference to the drawings. Figures 6A and 6B are schematic cross-sectional views showing an example of a display device having an organic light-emitting element and a transistor connected to the organic light-emitting element. The transistor is an example of an active element. The transistor may be a thin film transistor (TFT).

[0060] FIG. 6A is an example of a pixel that is a component of a display device having an organic light-emitting element according to this embodiment. The pixel has subpixels 30. The subpixels are divided into 30R, 30G, and 30B according to their light emission. The emitted light color may be distinguished by the wavelength emitted from the light-emitting layer, or the light emitted from the subpixels may be selectively transmitted or color-converted by a color filter or the like. Each subpixel has a reflective electrode 32 as a first electrode on an interlayer insulating layer 31, and an insulating layer 33 covering the edge of the reflective electrode 32. Furthermore, the subpixel has an organic compound layer 34 that covers the reflective electrode 32 and the insulating layer 33, a transparent electrode 35 as a second electrode, a protective layer 36, and color filters 37R, 37G, and 37B.

[0061] A transistor and a capacitor may be disposed below or inside the interlayer insulating layer 31. The transistor and the first electrode may be electrically connected via a contact hole (not shown) or the like.

[0062] The insulating layer 33 is also called a bank or a pixel separation film. It covers the end of the first electrode and is disposed so as to surround the first electrode. The portion where the insulating layer is not disposed contacts the organic compound layer 34 and becomes a light-emitting region. The organic compound layer 34 has a hole injection layer 341, a hole transport layer 342, a first light-emitting layer 343, a second light-emitting layer 344, and an electron transport layer 345.

[0063] The transparent electrode 35 may be a transparent electrode as the second electrode, a reflective electrode, or a semi-transparent electrode. The protective layer 36 reduces the penetration of moisture into the organic compound layer. Although the layer 36 is illustrated as being one layer, it may be multiple layers. Each layer may have an inorganic compound layer and an organic compound layer. The color filters are divided into color filters 37R, 37G, and 37B according to their colors. The color filters may be formed on a planarization film (not shown). Also, a resin protective layer (not shown) may be provided on the color filters. Also, the color filters may be formed on the protective layer 36. Alternatively, the color filters may be provided on an opposing substrate such as a glass substrate and then bonded thereto.

[0064] FIG. 6B shows a display device 100 having the organic light-emitting element of this embodiment. The display device 100 has an organic light-emitting element 26 and a TFT 18 as an example of a transistor. A substrate 11 made of glass, silicon, or the like is provided with an insulating layer 12 on the substrate. An active element 18 such as a TFT is provided on the insulating layer, and a gate electrode 13, a gate insulating film 14, and a semiconductor layer 15 of the active element are provided. The TFT 18 is also composed of a semiconductor layer 15, a drain electrode 16, and a source electrode 17. An insulating film 19 is provided on the upper part of the TFT 18. An anode 21 constituting the organic light-emitting element 26 and a source electrode 17 are connected via a contact hole 20 provided in the insulating film.

[0065] The electrical connection between the electrodes (anode, cathode) included in the organic light-emitting element 26 and the electrodes (source electrode, drain electrode) included in the TFT is not limited to the embodiment shown in Fig. 6B. In other words, it is sufficient that either the anode or the cathode is electrically connected to either the TFT source electrode or the drain electrode. TFT stands for thin film transistor.

[0066] 6B, the organic compound layer 22 is illustrated as one layer, but the organic compound layer 22 may be a multi-layered layer. A first protective layer 24 and a second protective layer 25 are provided on the cathode 23 to reduce deterioration of the organic light-emitting element.

[0067] Although the display device 100 in Fig. 6B uses transistors as switching elements, other switching elements may be used instead. The transistors used in the display device 100 in Fig. 6B are not limited to transistors using single crystal silicon wafers, and may be thin film transistors having an active layer on an insulating surface of a substrate. Examples of the active layer include non-single crystal silicon such as single crystal silicon, amorphous silicon, and microcrystalline silicon, and non-single crystal oxide semiconductors such as indium zinc oxide and indium gallium zinc oxide. Thin film transistors are also called TFT elements.

[0068] The transistors included in the display device 100 of Fig. 6B may be formed in a substrate such as a Si substrate. Here, "formed in a substrate" means that the substrate itself such as a Si substrate is processed to produce the transistors. In other words, having a transistor in a substrate may mean that the substrate and the transistor are integrally formed.

[0069] The organic light-emitting element according to this embodiment has its light emission brightness controlled by a TFT, which is an example of a switching element, and by providing the organic light-emitting element on a plurality of surfaces, an image can be displayed based on the respective light emission brightnesses. The switching element according to this embodiment is not limited to a TFT, and may be a transistor formed of low-temperature polysilicon, or an active matrix driver formed on a substrate such as a Si substrate. On the substrate may also be within the substrate. Whether to provide a transistor within the substrate or to use a TFT is selected according to the size of the display unit. For example, if the size is about 0.5 inches, it is preferable to provide the organic light-emitting element on a Si substrate.

[0070] 7 is a schematic diagram showing an example of a display device having an organic light-emitting element according to this embodiment. The display device 1000 includes an upper cover 1001 and a lower cover 1009, a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, a backlight 1008, and a display panel 1005. The display panel 1005 may have a display battery 1008. The touch panel 1003 and the display panel 1005 are connected by flexible printed circuits FPC 1002, 1004. A transistor is printed on the circuit board 1007. The battery 1008 may not be provided if the display device is not a portable device, and may be provided in a different position if the display device is a portable device.

[0071] The display device 1000 may have a color filter having red, green, and blue colors. The color filters may be arranged in a delta arrangement of the red, green, and blue colors. The display device 1000 may be used in a display unit of a mobile terminal. In this case, the display device 1000 may have both a display function and an operation function. Examples of the mobile terminal include mobile phones such as smartphones, tablets, and head-mounted displays.

[0072] Moreover, the display device 1000 may be used as a display unit of an imaging device having an optical unit with a plurality of lenses and an imaging element that receives light that has passed through the optical unit. The imaging device may have a display unit that displays information acquired by the imaging element. Moreover, the display unit may be a display unit exposed to the outside of the imaging device, or a display unit disposed within a viewfinder. The imaging device may be a digital camera or a digital video camera.

[0073] Next, FIG. 8A shows a schematic diagram illustrating an example of an imaging device having an organic light-emitting element according to this embodiment. The imaging device 1100 may have a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The viewfinder 1101 may have a display device according to this embodiment. In this case, the display device may display not only an image to be captured, but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the moving speed of the subject, the possibility that the subject will be blocked by an obstruction, and the like.

[0074] Since the timing suitable for imaging is short, it is better to display information as soon as possible. Therefore, it is suitable to configure a display device with a fast response speed using the organic light-emitting element of this embodiment. A display device using an organic light-emitting element can be used more preferably than a liquid crystal display device, which requires a high display speed.

[0075] The imaging device 1100 has an optical section (not shown). The optical section has a plurality of lenses, which form an image on an imaging element housed in a housing 1104. The focus of the plurality of lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically. The imaging device may be called a photoelectric conversion device. The photoelectric conversion device can include an imaging method that does not capture images sequentially, but detects the difference from the previous image, cuts out an image from an image that is always recorded, and the like.

[0076] FIG. 8B is a schematic diagram showing an example of an electronic device having an organic light-emitting element according to this embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type reaction unit. The operation unit may be a biometric recognition unit that recognizes a fingerprint and performs unlocking or the like. An electronic device having a communication unit can also be called a communication device. The electronic device 1200 may further have a camera function by including a lens and an image sensor. An image captured by the camera function is displayed on the display unit. Examples of the electronic device include a smartphone and a notebook computer.

[0077] Next, Fig. 9A shows a schematic diagram illustrating an example of a display device having an organic light-emitting element according to this embodiment. Fig. 9A shows a display device 1300 such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The organic light-emitting element according to this embodiment may be used in the display unit 1302. The display device 1300 also has a frame 1301 and The display unit 1302 has a base 1303 that supports the display unit 1302. The base 1303 is not limited to the form shown in FIG. 9A. The lower side of the frame 1301 may also serve as the base. The frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0078] FIG. 9B is a schematic diagram showing another example of a display device having an organic light-emitting element according to this embodiment. The display device 1310 in FIG. 9B is configured to be bendable, and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The first display unit 1311 and the second display unit 1312 may have the organic light-emitting element according to this embodiment. The first display unit 1311 and the second display unit 1312 may be one display unit without a joint. The first display unit 1311 and the second display unit 1312 can be separated at the bending point. The first display unit 1311 and the second display unit 1312 may display different images, or the first display unit and the second display unit may display one image.

[0079] Next, FIG. 10A shows a schematic diagram illustrating an example of a lighting device having an organic light-emitting element according to this embodiment. The lighting device 1400 may have a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion unit 1405. The light source has the organic light-emitting element according to this embodiment. The optical filter may be a filter that improves the color rendering of the light source. The light diffusion unit can effectively diffuse the light of the light source, such as for lighting up, and deliver the light to a wide range. The optical filter and the light diffusion unit may be provided on the light emission side of the lighting. If necessary, a cover may be provided on the outermost part.

[0080] The lighting device 1400 is, for example, a device that illuminates a room. The lighting device may emit white, neutral white, or any other color from blue to red. It may have a dimming circuit that dims the light. The lighting device 1400 may have an organic light-emitting element according to this embodiment and a power supply circuit connected thereto. The power supply circuit is a circuit that converts AC voltage to DC voltage. Moreover, white has a color temperature of 4200K, and neutral white has a color temperature of 5000K. Moreover, the lighting device 1400 may have a color filter. Moreover, the lighting device 1400 may have a heat dissipation unit. The heat dissipation unit dissipates heat inside the device to the outside of the device, and examples of the heat dissipation unit include metals with high specific heat and liquid silicon.

[0081] 10B is a schematic diagram of an automobile, which is an example of a moving body having an organic light-emitting element according to this embodiment. The automobile has a tail lamp, which is an example of a lamp. The automobile 1500 has a tail lamp 1501, and may be configured to turn on the tail lamp when braking or the like is performed.

[0082] A tail lamp 1501 has an organic light-emitting element according to this embodiment. The tail lamp may have a protective member for protecting the organic EL element. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, but is preferably made of polycarbonate or the like. Polycarbonate may be mixed with a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like.

[0083] The automobile 1500 may have a body 1503 and a window 1502 attached thereto. The window may be a transparent display as long as it is not a window for checking the front and rear of the automobile. The transparent display may have an organic light-emitting element according to this embodiment. In this case, the constituent materials of the electrodes and the like of the organic light-emitting element are made of transparent members.

[0084] Furthermore, the moving object having the organic light-emitting element according to the present embodiment may be a ship, an aircraft, a drone, or the like. The moving object may have a body and a lamp provided on the body. The lamp may emit light to indicate the position of the body. The lamp has the organic light-emitting element according to the present embodiment.

[0085] In addition, the display device having the organic light-emitting element of this embodiment can be applied to a system that can be attached as a wearable device such as smart glasses, HMD, smart contacts, etc. The image capturing and display device used in such an application example has an image capturing device capable of photoelectrically converting visible light, and a display device capable of emitting visible light.

[0086] 11A shows glasses 1600 (smart glasses) as an application example of the display device having the organic light-emitting element of this embodiment. An imaging device 1602 such as a CMOS sensor or SPAD is provided on the front side of a lens 1601 of the glasses 1600. In addition, a display device of each of the above-mentioned embodiments is provided on the back side of the lens 1601.

[0087] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the image capture device 1602 and the display device according to each embodiment. The control device 1603 also controls the operations of the image capture device 1602 and the display device. The lens 1601 is formed with an optical system for focusing light on the image capture device 1602.

[0088] FIG. 11B shows glasses 1610 (smart glasses) according to another application example of the display device having the organic light-emitting element of this embodiment. The glasses 1610 have a control device 1612. The control device 1612 is equipped with an imaging device corresponding to the imaging device 1602 and a display device. An optical system for projecting light emitted by the display device in the control device 1612 is formed in the lens 1611, and an image is projected onto the lens 1611. The control device 1612 functions as a power source that supplies power to the imaging device and the display device, and controls the operation of the imaging device and the display device. The control device may have a line-of-sight detection unit that detects the line of sight of the wearer. Infrared light may be used to detect the line of sight. The infrared light emission unit emits infrared light toward the eyeball of a user gazing at a displayed image. An imaging unit having a light receiving element detects the reflected light of the emitted infrared light from the eyeball, thereby obtaining an image of the eyeball. By having a reduction means for reducing light from the infrared light emission unit to the display unit in a planar view, deterioration of image quality is reduced.

[0089] The gaze of the user with respect to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be applied to gaze detection using the image of the eyeball. As an example, a gaze detection method based on a Purkinje image formed by reflection of irradiated light on the cornea can be used. More specifically, the gaze detection process is performed based on the pupil-corneal reflex method. Using the pupil-corneal reflex method, a gaze vector that indicates the direction (rotation angle) of the eyeball is calculated based on the pupil image and the Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0090] A display device having an organic light-emitting element according to this embodiment may have an imaging device having a light-receiving element, and may control a display image of the display device based on information on the user's line of sight from the imaging device.

[0091] Specifically, the display device determines a first field of view area to which the user gazes and a second field of view area other than the first field of view area based on the line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received by the display device. In the display area of ​​the display device, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0092] The display area may have a first display area and a second display area different from the first display area, and the display device may select an area with a high priority from the first display area and the second display area based on line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received by the display device. The display device may control the resolution of the high priority region to be higher than the resolution of the regions other than the high priority region, that is, the display device may lower the resolution of the region with a relatively low priority.

[0093] The display device may use AI (Artificial Intelligence) to determine the first field of view area or the area with high priority. The AI ​​may be a model configured to estimate the angle of the line of sight and the distance to an object at the end of the line of sight from an image of the eyeball, using an image of the eyeball and the direction in which the eyeball in the image was actually looking as teacher data. The AI ​​program may be included in the display device, the imaging device, or an external device. If the external device has the AI ​​program, the AI ​​program is transmitted from the external device to the display device via communication.

[0094] When the display device controls display based on visual recognition detection, the display device can be preferably applied to smart glasses further including an imaging device for capturing an image of the outside world. The smart glasses can display captured outside information in real time. EXAMPLES

[0095] Next, examples of the deposition mask 210 according to this embodiment will be described. Note that the deposition mask 1 according to this embodiment is not limited to the deposition masks shown in the following examples.

[0096] Table 1 shows the evaluation results regarding deposition blur of the deposition mask 210 according to the embodiment described below and a deposition mask according to the conventional technique as a comparative example. [Table 1]

[0097] In judging the deposition blur of the deposition masks according to the examples and comparative examples, if the deposition blur amount (μm) is within the range of blur amount that does not cause deposition on adjacent subpixels, it is considered to be good ("◯" in the figure). Also, if the deposition blur amount (μm) is the blur amount that causes deposition on adjacent subpixels, it is considered to be bad ("×" in the figure). Here, as an example, the amount of blur that is deposited on adjacent subpixels is determined by "(distance between adjacent subpixels) - (radius of pixel opening)".

[0098] 5A shows an example of deposition using a deposition mask 210 according to Example 1 of the present disclosure. In Example 1 illustrated here, a deposition mask 210 is used that is fabricated by processing an SOI wafer as shown in FIG. 4B. As an example, the deposition mask 210 is a Si mask with a mask diameter of 200 mm and a thickness of 500 μm. In addition, in a plan view of the deposition mask 210, the size of the recesses 303 is a rectangle of 8×10 mm, and 100 recesses 303 are arranged in the deposition mask 210.

[0099] In Example 1, as shown in Fig. 4B, the mask thickness of the bottom surface of each recess 303 is set to 6 µm. The size of each opening 304 is set to Φ2 µm, and 3 million openings 304 are arranged in one recess 303. Furthermore, the structure 305 is a Co film having a thickness of 500 nm formed by sputtering, and is arranged between the openings so as to surround the openings 304 as shown in Fig. 4B.

[0100] Here, the thickness of the structure 305 (height in the normal direction to the surface of the deposition mask 210) will be described. The magnetic force of the magnet 301 disposed on the back surface of the substrate 211 attracts the magnetic structure 305 formed on the surface of the deposition mask 210 through the substrate 211. For this reason, if the mask thickness of the deposition mask 210 is increased, the mask weight increases, and there is a possibility that the magnetic force of the magnet 301 will not attract the structure 305. Therefore, the thickness of the structure 305 is set so that "the force (adsorption force) acting between the magnetic force of the magnet 301 in the recess 303 and the structure 305>the weight of the deposition mask 210 in the recess 303 (depending on the mask thickness)" is satisfied.

[0101] The evaluation of deposition blur will be described with reference to FIG. 5A and FIG. 5B. FIG. 5A and FIG. 5B are schematic diagrams showing the deposition films 507 and 508 formed on the substrate 501 after deposition using a deposition mask. As shown in FIG. 5A, when a desired light-emitting material is deposited on a pixel region 502 on the substrate 501, the deposition film 507 is not deposited on the adjacent pixel region 503. In such a case, the evaluation result of deposition blur is evaluated as "○" (good). On the other hand, as shown in FIG. 5B, when a desired light-emitting material is deposited on the pixel region 502 on the substrate 501, the deposition film 508 is deposited up to the adjacent pixel region 503. In such a case, the evaluation result of deposition blur is evaluated as "×" (bad).

[0102] As a result of depositing an organic material on a substrate using the deposition mask 210 of Example 1, the deposition blur amount was 1.0 μm or less for the openings 304 of all recesses 303 in the mask with a mask Φ of 200 mm, and all chips in the deposition mask 210 were determined to be non-defective.

[0103] Next, a description will be given of Example 2 of the present disclosure. The deposition mask 210 according to Example 2 is the same as the deposition mask 210 according to Example 1, except that the magnetic structures 305 are formed of Ni-Fe-P by electroless plating. As a result of depositing an organic material on a substrate using the deposition mask according to Example 2, the deposition blur amount was 1.0 μm or less for the openings 304 of all recesses 303 in the mask with a mask Φ of 200 mm, and all chips in the deposition mask 210 were determined to be non-defective. Therefore, the deposition mask 210 according to Example 2 also has the same effect of reducing deposition blur as Example 1.

[0104] Next, a description will be given of Example 3 of the present disclosure. The deposition mask 210 according to Example 3 is the same as the deposition mask 210 according to Example 1, except that the arrangement of the magnetic structure 405 is different. As shown in FIG. 4C, the structure 405 is a Co film having a diameter of Φ1.8 μm and a thickness of 500 nm formed by sputtering, and is arranged between the opening 404 and another opening (for example, the opening 406). As a result of depositing an organic material on a substrate using the deposition mask according to Example 3, the deposition blur amount was 1.0 μm or less for the openings 404 of all the recesses 403 in the mask with a diameter of Φ200 mm, and all the chips in the deposition mask 210 were determined to be non-defective. Therefore, the deposition mask 210 according to Example 3 also has the same effect of reducing deposition blur as Example 1.

[0105] Next, Comparative Example 1 of the deposition mask 210 of the present disclosure will be described. The deposition mask according to Comparative Example 1 is the same as the deposition mask 210 of Example 1, except that the deposition mask 210 does not have the magnetic structure 305 formed therein. As a result of depositing an organic material onto a substrate using the deposition mask according to Comparative Example 1, the deposition blur amount was 10 μm or more in 100 chips within a mask Φ200 mm, and some chips became defective.

[0106] As can be seen from the results of Examples 1 and 2 of the deposition mask according to this embodiment in the table, according to this embodiment, regardless of the type of material of the deposition mask, the occurrence of deposition blur can be suitably suppressed depending on the structure, as compared to the conventional deposition mask shown in the comparative example.

[0107] The disclosure of this embodiment includes the following configuration. (Configuration 1) A deposition mask made of a non-magnetic material, an opening portion corresponding to a deposition pattern to be deposited on the substrate is formed in a surface of the deposition mask facing the substrate; A structure made of a magnetic material is formed between the openings on the surface of the deposition mask facing the substrate. A deposition mask comprising: (Configuration 2) the opening is formed in a recess provided in a surface of the deposition mask facing an evaporation source, The mask thickness of the recess is thinner than the mask thickness of the peripheral portion of the recess. 2. The deposition mask according to claim 1, (Method 1) A method for producing an organic light-emitting element, comprising forming an organic compound layer constituting an organic light-emitting element by using the deposition mask according to configuration 1 or 2. (Configuration 4) 3. A display device comprising an organic light-emitting element having an organic compound layer formed using the deposition mask according to claim 1 or 2. (Configuration 5) 3. An imaging device comprising an organic light-emitting element having an organic compound layer formed using the deposition mask according to claim 1 or 2. (Configuration 6) 3. An electronic device comprising an organic light-emitting element having an organic compound layer formed using the deposition mask according to claim 1 or 2. (Configuration 7) 3. A lighting device comprising an organic light-emitting element having an organic compound layer formed using the deposition mask according to claim 1 or 2. (Configuration 8) A mobile object including an organic light-emitting element having an organic compound layer formed using the deposition mask according to aspect 1 or 2. [Explanation of symbols]

[0108] 210 deposition mask, 303 recess, 304 opening, 305 structure

Claims

1. A deposition mask made of a non-magnetic material, the deposition mask has an opening on a surface facing the substrate, A structure made of a magnetic material is formed between the openings on the surface of the deposition mask facing the substrate. A deposition mask characterized by:

2. the opening is formed in a recess provided on a surface of the deposition mask facing an evaporation source, The mask thickness of the recess is thinner than the mask thickness of the peripheral portion of the recess.

2. The deposition mask according to claim 1.

3. An evaporation mask as described in Claim 2, characterized in that the thickness of the magnetic material is thicker than the mask thickness in the recess.

4. An evaporation mask as described in claim 1, characterized in that the structure made of the magnetic material is arranged to surround the opening.

5. An evaporation mask as described in claim 2, characterized in that the mask thickness at the recess is 6 μm or less.

6. A method for manufacturing an organic light-emitting element, comprising forming an organic compound layer constituting an organic light-emitting element using the deposition mask according to claim 1 .

7. A display device comprising an organic light-emitting element having an organic compound layer formed using the deposition mask according to claim 1 .

8. An imaging device comprising an organic light-emitting element having an organic compound layer formed using the deposition mask according to claim 1 .

9. An organic compound layer formed using the deposition mask according to any one of claims 1 to 5. An electronic device comprising an organic light-emitting element.

10. A lighting device comprising an organic light-emitting element having an organic compound layer formed using the deposition mask according to claim 1 .

11. A moving object comprising an organic light-emitting element having an organic compound layer formed using the deposition mask according to claim 1 or 2.

Images