High frequency characteristic inspection system, control device, probe positioning method, program and recording medium

Abstract

To provide a high frequency characteristic inspection system for positioning a probe.SOLUTION: A high frequency characteristic inspection system 1 includes a first probe 21 and a second probe 22 each having a signal terminal and a ground terminal, a transmission device 30 connected to the first probe 21, a reception device 40 which is connected to the second probe 22 and performs scalar value analysis, and a control device 50 for controlling the positions of the first probe 21 and the second probe 22 with respect to a device under test DUT. The control device 50 brings the second probe 22 close to the device under test DUT gradually in a state in which the first probe 21 is electrically brought into contact with the device under test DUT, determines the position of the second probe 22 when the reception device 40 receives a signal, brings the first probe 21 close to the device under test DUT gradually in a state in which the second probe 22 is electrically brought into contact with the device under test DUT, and determines the position of the first probe 21 when the reception device 40 receives a signal.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a technique for positioning a probe in a high frequency characteristic inspection system. [Background technology]

[0002] A known technology for high frequency characteristic inspection systems is to inspect the electrical characteristics of a device under test (DUT) in wafer or chip form using a radio frequency (RF) probe having one or more signal terminals and one or more ground terminals. In such high frequency characteristic inspection systems, the probe is positioned before inspection to determine the position where the probe will contact the pad of the device under test. Specifically, the probe is brought into contact with the pad of the device under test visually using a microscope and manually, and the position of the probe at this time is determined.

[0003] According to the findings of the inventor(s), visual inspection using a microscope and manual positioning of the probes may result in an error of about 10 μm in the position of the probes. For example, if an error occurs in the position in the Z-axis direction perpendicular to the device under test, an error in contact resistance etc. will occur, resulting in an error in the measurement results of the electrical characteristics of the device under test. Also, if an error occurs in the position in the X-axis direction along the line connecting the pair of probes, an error in parasitic impedance etc. will occur, resulting in an error in the measurement results of the electrical characteristics of the device under test.

[0004] In this regard, the inventor(s) of the present application have devised a method of positioning a probe that determines the position where the probe contacts the pad of a device under test based on the reflection coefficient of the S-parameter using a vector network analyzer (VNA). Specifically, the probe is gradually brought closer to the device under test, and the position of the probe is determined when the probe comes into contact with the device under test and the reflection coefficient of the S-parameter changes. For example, a probe station allows the probe to be gradually brought closer to the device under test at a predetermined distance interval of about 1 μm to 0.1 μm, so that the positioning of the probe according to the present invention can reduce the error in the probe position to about 1 μm to 0.1 μm. This can improve the reproducibility of the probe position and the reproducibility of the inspection of the electrical characteristics of the device under test (for example, Patent Document 1). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Patent No. 7028430 Summary of the Invention [Problem to be solved by the invention]

[0006] By the way, in testing the electrical characteristics of a device under test, a testing system equipped with a signal generator (transmitting device) and a power meter or spectrum analyzer (receiving device) is sometimes used instead of a vector network analyzer. Such a testing system cannot measure S parameters.

[0007] Also, a vector network analyzer has a function of outputting a high-frequency signal and a function of analyzing an input signal. In contrast, a power meter or a spectrum analyzer does not have a signal output function, and the signal analysis function of a power meter or a spectrum analyzer is scalar value analysis. Also, a signal generator does not have a signal analysis function. Therefore, in such an inspection system, it is not possible to simultaneously position a pair of probes, and the probe positioning technology described in Patent Document 1 cannot be applied.

[0008] Therefore, an object of the present invention is to provide a high-frequency characteristic inspection system, a control device, a probe positioning method, a program, and a recording medium that position a probe in a system using a transmitting device and a receiving device that performs scalar value analysis. [Means for solving the problem]

[0009] (1) A high-frequency characteristic inspection system according to the present invention includes a first probe and a second probe each having a signal terminal and a ground terminal, a transmitting device connected to the first probe and transmitting a signal, a receiving device connected to the second probe and performing scalar value analysis of a received signal, and a control device controlling positions of the first probe and the second probe relative to a device under test. The control device gradually brings the second probe closer to the device under test while the first probe is in electrical contact with the device under test, and determines the position of the second probe when the receiving device receives a signal, and gradually brings the first probe closer to the device under test while the second probe is in electrical contact with the device under test, and determines the position of the first probe when the receiving device receives a signal.

[0010] (2) In the high frequency characteristic inspection system described in (1), the device under test includes a high frequency device and a through pattern on a wafer or a chip, and the control device, while the first probe is in electrical contact with one end of the through pattern, gradually moves the second probe closer to the other end of the through pattern, and determines the position of the second probe when the receiving device receives a signal, while the second probe is in electrical contact with one end of the through pattern, gradually moves the first probe closer to one end of the through pattern, and determines the position of the first probe when the receiving device receives a signal. Then, based on CAD data regarding a layout of the device under test, the positions of the first and second probes relative to the high frequency device may be calculated from the determined positions of the first and second probes relative to the through pattern.

[0011] (3) In the high frequency characteristic inspection system described in (1) or (2), the control device may determine the position of the first probe or the position of the second probe when the indication value of the receiving device changes.

[0012] (4) In the high-frequency characteristic inspection system described in any one of (1) to (3), the control device may measure the indication value of the receiving device multiple times while the second probe is not in electrical contact with the device under test, calculate an average value and a standard deviation σ of the measurement results, set the average value + (3σ to 10σ) as a threshold, and determine the position of the first probe or the second probe when the indication value of the receiving device exceeds the threshold value.

[0013] (5) In the high-frequency characteristic inspection system described in any one of (1) to (4), the position of the first probe determined by the control device may be a position where the first probe and the device under test are not in physical contact but are in electrical contact through electromagnetic coupling, and the position of the second probe determined by the control device may be a position where the second probe and the device under test are not in physical contact but are in electrical contact through electromagnetic coupling.

[0014] (6) In the high-frequency characteristic inspection system according to any one of (1) to (5), the transmitting device may be a signal generator, and the receiving device may be a power meter or a spectrum analyzer.

[0015] (7) A control device according to the present invention is a control device for a high-frequency characteristic inspection system including a first probe and a second probe each having a signal terminal and a ground terminal, a transmitting device connected to the first probe and transmitting a signal, and a receiving device connected to the second probe and performing scalar value analysis of a received signal, and controls positions of the first probe and the second probe relative to a device under test. The control device gradually brings the second probe closer to the device under test while the first probe is in electrical contact with the device under test, and determines the position of the second probe when the receiving device receives a signal, and gradually brings the first probe closer to the device under test while the second probe is in electrical contact with the device under test, and determines the position of the first probe when the receiving device receives a signal.

[0016] (8) A probe positioning method according to the present invention is a method for positioning a first probe and a second probe, each having a signal terminal and a ground terminal, a transmitting device connected to the first probe and transmitting a signal, a receiving device connected to the second probe and performing scalar value analysis of the received signal, and a control device for controlling positions of the first probe and the second probe relative to a device under test, wherein the control device gradually brings the second probe closer to the device under test while the first probe is in electrical contact with the device under test, and determines the position of the second probe when the receiving device receives a signal, and gradually brings the first probe closer to the device under test while the second probe is in electrical contact with the device under test, and determines the position of the first probe when the receiving device receives a signal.

[0017] (9) A program according to the present invention is a program for causing a computer acting as a control device in a high-frequency characteristic inspection system including a first probe and a second probe each having a signal terminal and a ground terminal, a transmitting device connected to the first probe and transmitting a signal, a receiving device connected to the second probe and performing scalar value analysis of the received signal, and a control device controlling the positions of the first probe and the second probe relative to a device under test to execute a function of gradually bringing the second probe closer to the device under test while the first probe is in electrical contact with the device under test, and determining the position of the second probe when the receiving device receives a signal, and a function of gradually bringing the first probe closer to the device under test while the second probe is in electrical contact with the device under test, and determining the position of the first probe when the receiving device receives a signal.

[0018] (10) A recording medium according to the present invention is a computer-readable recording medium having the above-mentioned program recorded thereon. Effect of the Invention

[0019] According to the present invention, in a probe positioning technique in a high frequency characteristic inspection system using a transmitting device and a receiving device that performs scalar value analysis, it is possible to improve the reproducibility of the probe position, thereby improving the reproducibility of the inspection of the electrical characteristics of a device under test using the probe. [Brief description of the drawings]

[0020] [Figure 1] 1 is a schematic diagram showing an example of a high-frequency characteristic inspection system according to an embodiment of the present invention. [Diagram 2] 10 is a flowchart of an example of a probe positioning process performed by a control device of the high-frequency characteristic inspection system according to the present embodiment. [Diagram 3] 13 is a measurement result showing the repeatability of the probe position. [Figure 4] 4 is a measurement result showing the reproducibility of the reflection coefficient (electrical characteristic) at the probe position in FIG. 3. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings, in which the same or corresponding parts are designated by the same reference numerals.

[0022] (High frequency characteristic inspection system) Fig. 1 is a schematic diagram showing an example of a high frequency characteristic inspection system 1 according to this embodiment. The high frequency characteristic inspection system 1 shown in Fig. 1 uses a pair of probes 20 to inspect electrical characteristics of a device under test (DUT) in the form of a wafer or chip. Prior to inspection, this high frequency characteristic inspection system 1 performs positioning of the probes to determine positions where the pair of probes 20 contact pads of the device under test (DUT). The high frequency characteristic inspection system 1 includes a probe station 10, the pair of probes 20, a transmitting device 30, a receiving device 40, and a control device 50.

[0023] The probe station 10 comprises a base 11 , a sample stage 12 , a pair of probe stages 14 and 15 , and a microscope 16 .

[0024] The sample stage 12 is placed on a base 11. The sample stage 12 has a device under test DUT mounted thereon. The sample stage 12 is movable in the X-axis direction and the Y-axis direction. The sample stage 12 is also rotatable about a rotation axis extending in the Z-axis direction.

[0025] The pair of probe stages 14, 15 are disposed on the base 11 so as to face each other across the sample stage 12 in the X-axis direction. The pair of probe stages 14, 15 each mount a pair of probes 20. In the example of FIG. 1, the first probe stage 14 mounts a first probe 21, and the second probe stage 15 mounts a second probe 22. Each of the probe stages 14, 15 is movable in the X-axis, Y-axis, and Z-axis directions. In addition, each of the probe stages 14, 15 is tiltable about a tilt axis extending in the X-axis direction.

[0026] The microscope 16 is used to visually and manually set the position of a pair of probes 20 relative to a device under test DUT placed on the sample stage 12 .

[0027] The pair of probes 20 are mounted on the pair of probe stages 14, respectively, and are arranged to face each other across the sample stage 12 in the X-axis direction. Each of the probes 20 is a radio frequency (RF) probe having one or more signal terminals (S terminals) and one or more ground terminals (G terminals). Probe types include, for example, SG type, GS type, GSG type, and GSGSG type. Hereinafter, the pair of probes 20 may also be referred to as a first probe 21 and a second probe 22.

[0028] The transmitting device 30 is connected to the first probe 21 and transmits a high-frequency signal. An example of the transmitting device 30 is a signal generator (source generator).

[0029] The receiving device 40 is connected to the second probe 22 and performs scalar value analysis of the received signal. The receiving device 40 may be a power meter, a spectrum analyzer, or the like.

[0030] The control device 50 controls the positions of the first probe 21 and the second probe 22 relative to the device under test DUT by controlling the positions of the probe stages 14 and 15. The control device 50 also controls the operations of the transmitting device 30 and the receiving device 40. The control device 50 may have a function of controlling the sample stage 12.

[0031] The control device 50 is configured with an arithmetic processor (computer) such as a CPU (Central Processing Unit), a DSP (Digital Signal Processor), and an FPGA (Field-Programmable Gate Array). The various functions of the control device 50 are realized, for example, by executing a program (application) stored in a storage unit. The program (application) may be provided via a network, or may be provided by being recorded on a computer-readable storage medium such as a CD-ROM (Compact Disc Read only memory) or a DVD (Digital Versatile Disc). Examples of the storage medium include non-transitory tangible media.

[0032] (Probe positioning method) Next, an example of a probe positioning method by the control device 50 of the high frequency characteristic inspection system 1 will be described with reference to Fig. 1 and Fig. 2. Fig. 2 is a flowchart of an example of a probe positioning process by the control device 50 of the high frequency characteristic inspection system 1 according to this embodiment.

[0033] First, a threshold for positioning the probe relative to the device under test DUT is determined (S1). For example, the control device 50 measures the indication value of the receiving device 40 multiple times while the second probe 22 is not in electrical contact with the device under test DUT (air open), calculates the average value and standard deviation σ of the measurement results, and sets the average value + (3σ to 10σ) as the threshold. Alternatively, the threshold may be set based on the magnitude of the signal transmitted from the transmitting device.

[0034] Next, the first probe 21 is electrically contacted to the device under test DUT by visual inspection using the microscope 16 and manually (S2). For example, the tilt angle, the position in the X-axis direction, the position in the Y-axis direction, and the position in the Z-axis direction of the first probe 21 are adjusted with respect to a pad on one end side of a through pattern formed on the device under test DUT, and the first probe 21 is electrically contacted to the pad on one end side of the through pattern.

[0035] Next, the position of the second probe 22 is roughly adjusted with respect to the device under test DUT by visual inspection using the microscope 16 and manually. For example, the tilt angle, X-axis position, Y-axis position, and Z-axis position of the second probe 22 are roughly adjusted with respect to the pad on the other end side of the through pattern formed on the device under test DUT. Then, the position of the second probe 22 in the Z-axis direction is set to an initial position spaced a predetermined distance (e.g., 10 μm) from the device under test DUT, for example, from the pad on the other end side of the through pattern of the device under test DUT.

[0036] Next, the control device 50 starts the signal transmission of the transmitting device 30 and starts the signal reception and analysis of the receiving device 40 .

[0037] Next, the control device 50 gradually (e.g., at a predetermined distance interval of 1 μm to 0.1 μm) brings the second probe 22 closer to the device under test DUT, for example, to a pad on the other end side of the through pattern of the device under test DUT, in the Z-axis direction. At this time, when the receiving device 40 receives a signal, specifically, when the indication value of the receiving device 40 changes, for example, when the indication value of the receiving device 40 exceeds a threshold value, the control device 50 determines that the second probe 22 has come into electrical contact with the device under test DUT, for example, to a pad on the other end side of the through pattern of the device under test DUT, and determines the position of the second probe 22 in the Z-axis direction (S3).

[0038] Next, the position in the X-axis direction is determined in the same manner. For example, the position in the Z-axis direction of the second probe 22 is returned to an initial position spaced a predetermined distance (e.g., 10 μm) from the device under test DUT, for example, from the pad on the other end side of the through pattern of the device under test DUT, and the position in the X-axis direction of the second probe 22 is set to an initial position spaced a predetermined distance (e.g., 10 μm) from the device under test DUT, for example, from the pad on the other end side of the through pattern of the device under test DUT.

[0039] Next, the control device 50 gradually (at intervals of a predetermined distance of, for example, 1 μm to 0.1 μm) brings the second probe 22 closer to the device under test DUT, for example, to a pad on the other end side of the through pattern of the device under test DUT, in the X-axis direction. At this time, the control device 50 repeats an operation of lowering the position of the second probe 22 in the Z-axis direction to the position determined as described above and an operation of returning it to the initial position described above. At this time, when the receiving device 40 receives a signal, specifically, when the indication value of the receiving device 40 changes, for example, when the indication value of the receiving device 40 exceeds a threshold value, the control device 50 determines that the second probe 22 has come into electrical contact with the device under test DUT, for example, to a pad on the other end side of the through pattern of the device under test DUT, and determines the position of the second probe 22 in the X-axis direction (S3).

[0040] Next, the position in the Y-axis direction may be determined in the same manner as the positioning in the X-axis direction (S3). According to the knowledge of the inventor(s), if an error occurs in the position in the X-axis direction, an error in parasitic impedance, etc. occurs, and an error occurs in the measurement results of the electrical characteristics of the device under test. On the other hand, even if an error occurs in the position in the Y-axis direction, the error in the parasitic impedance, etc. is relatively small, and the error in the measurement results of the electrical characteristics of the device under test is relatively small. Therefore, visual inspection using the microscope 16 and manual positioning of the second probe 22 in the Y-axis direction are sufficient, and the positioning of the second probe 22 in the Y-axis direction according to this embodiment may be omitted.

[0041] Next, the first probe 21 is positioned in the same manner as the second probe 22. For example, the second probe 22 is left at the determined position, and the second probe 22 is electrically contacted with the device under test DUT, for example, with a pad on the other end side of the through pattern of the device under test DUT. Then, the position of the first probe 21 in the Z-axis direction is set to an initial position spaced a predetermined distance (for example, 10 μm) from the device under test DUT, for example, from a pad on one end side of the through pattern of the device under test DUT.

[0042] Next, the control device 50 gradually (e.g., at a predetermined distance interval of 1 μm to 0.1 μm) brings the first probe 21 closer to the device under test DUT, for example, to a pad on one end side of the through pattern of the device under test DUT, in the Z-axis direction. At this time, when the receiving device 40 receives a signal, specifically, when the indication value of the receiving device 40 changes, for example, when the indication value of the receiving device 40 exceeds a threshold value, the control device 50 determines that the first probe 21 has come into electrical contact with the device under test DUT, for example, to a pad on one end side of the through pattern of the device under test DUT, and determines the position of the first probe 21 in the Z-axis direction (S4).

[0043] Next, the position in the X-axis direction is determined in the same manner. For example, the position in the Z-axis direction of the first probe 21 is returned to an initial position spaced a predetermined distance (e.g., 10 μm) from the device under test DUT, for example, from a pad on one end side of the through pattern of the device under test DUT, and the position in the X-axis direction of the first probe 21 is set to the initial position spaced a predetermined distance (e.g., 10 μm) from the pad on one end side of the through pattern.

[0044] Next, the control device 50 gradually (at intervals of a predetermined distance of, for example, 1 μm to 0.1 μm) brings the first probe 21 closer to the device under test DUT, for example, to a pad on one end side of the through pattern of the device under test DUT, in the X-axis direction. At this time, the control device 50 repeats an operation of lowering the position of the first probe 21 in the Z-axis direction to the position determined as described above and an operation of returning it to the initial position described above. At this time, when the receiving device 40 receives a signal, specifically, when the indication value of the receiving device 40 changes, for example, when the indication value of the receiving device 40 exceeds a threshold value, the control device 50 determines that the first probe 21 has come into electrical contact with the device under test DUT, for example, to a pad on the general side of the through pattern of the device under test DUT, and determines the position of the first probe 21 in the X-axis direction (S4).

[0045] Next, the position in the Y-axis direction may be determined in the same manner as the positioning in the X-axis direction (S4). For the same reasons as described above, visual inspection using the microscope 16 and manual positioning of the first probe 21 in the Y-axis direction is sufficient, and the positioning of the first probe 21 in the Y-axis direction according to this embodiment may be omitted.

[0046] Next, the control device 50 calculates the relative pad positions of the high frequency device of the device under test DUT with respect to the pad positions of the through pattern of the device under test DUT based on the CAD data related to the layout of the device under test DUT. The control device 50 determines the X-axis and Y-axis positions of the first probe 21 with respect to the high frequency device of the device under test DUT from the X-axis and Y-axis positions of the first probe 21 with respect to the through pattern of the device under test determined based on the calculated relative pad positions. The control device 50 also determines the X-axis and Y-axis positions of the second probe 22 with respect to the high frequency device of the device under test DUT from the X-axis and Y-axis positions of the second probe 22 with respect to the through pattern of the device under test determined based on the calculated relative pad positions (S5).

[0047] In this embodiment, the second probe is positioned first, and then the first probe is positioned, but the first probe may be positioned first, and then the second probe may be positioned. In this case, in the above-mentioned probe positioning process, the second probe and the first probe are replaced, and the pads on one end side of the through pattern are replaced with the pads on the other end side.

[0048] In this embodiment, the probe is positioned using the through pattern formed in the device under test DUT, but the probe may be positioned directly using the high-frequency device of the device under test DUT. In this case, in the above-mentioned probe positioning process, the through pattern is replaced with the high-frequency device, and the process of step S5 is omitted.

[0049] As described above, according to the high frequency characteristic inspection system 1 of this embodiment, the pair of probes 20 can be positioned in a system using the transmitting device 30 and the receiving device 40 that performs scalar value analysis.

[0050] According to the knowledge of the inventor(s), visual inspection using the microscope 16 and manual positioning of the probes may result in an error of about 10 μm in the position of the probes. For example, if an error occurs in the position in the Z-axis direction perpendicular to the device under test, an error in contact resistance etc. will occur, resulting in an error in the measurement results of the electrical characteristics of the device under test. Also, if an error occurs in the position in the X-axis direction along the line connecting the pair of probes, an error in parasitic impedance etc. will occur, resulting in an error in the measurement results of the electrical characteristics of the device under test.

[0051] In contrast, according to the high frequency characteristic inspection system 1 of the present embodiment, the probe 20 can be gradually brought closer to the device under test DUT in increments of a predetermined distance of, for example, about 1 μm to 0.1 μm, so that the position error of the probe 20 can be reduced to about 1 μm to 0.1 μm. This improves the repeatability of the position of the probe 20, and improves the repeatability of the inspection of the electrical characteristics of the device under test DUT.

[0052] Here, if the frequency of the signal is 30 GHz or more, the probes are electrically connected due to electromagnetic coupling even if they are not in physical contact. In this regard, according to the high frequency characteristic inspection system 1 of this embodiment, when the receiving device 40 receives a signal, specifically when the indication value of the receiving device 40 changes, for example, when the indication value of the receiving device 40 exceeds a threshold value, the positions of the first probe 21 and the second probe 22 are determined. Therefore, the determined position of the first probe 21 may be a position where the first probe 21 and the device under test DUT are not in physical contact but are in electrical contact due to electromagnetic coupling, and the determined position of the second probe 22 may be a position where the second probe 22 and the device under test DUT are not in physical contact but are in electrical contact due to electromagnetic coupling. This makes it possible to prevent the pads of the device under test DUT from being damaged during the inspection.

[0053] (Verification 1) Fig. 3 shows the measurement results indicating the repeatability of the probe position. In Fig. 3, the horizontal axis indicates the X-axis 1X and Z-axis 1Z of the first probe, and the X-axis 2X and Z-axis 2Z of the second probe, and the vertical axis indicates the standard deviation σ (STDEV) of the probe position when the probe positioning was performed four times. A indicates the standard deviation σ of the probe position using the probe positioning method of this embodiment, and B indicates the standard deviation σ of the probe position using the visual inspection using the microscope 16 and the manual method.

[0054] 3, the standard deviation σ (STDEV) can be made smaller in A compared to B. That is, according to the probe positioning technique of this embodiment, the reproducibility of the probe position can be improved.

[0055] (Verification 2) FIG. 4 shows the measurement results showing the reproducibility of the reflection coefficient S11 (electrical characteristic) at the probe position in FIG. 3. A vector network analyzer was used to measure the reflection coefficient S11. In FIG. 4, the horizontal axis is the signal frequency, and the vertical axis is the standard deviation σ (REP(S11)) of the reflection coefficient S11 at the probe position where the probe positioning count is four times. As shown in FIG. 4, the standard deviation σ (REP(S11)) of the reflection coefficient S11 is calculated based on the standard deviation (STDEV(Re(S11))) of the real part Re(S11) of the reflection coefficient S11 and the standard deviation (STDEV(Im(S11))) of the imaginary part Im(S11) of the reflection coefficient S11. A is the standard deviation σ of the reflection coefficient S11 at the probe position by the probe positioning method of this embodiment, and B is the standard deviation σ of the reflection coefficient S11 at the probe position by the visual and manual methods using the microscope 16.

[0056] 4, the standard deviation σ(REP(S11)) can be made smaller in A than in B. That is, according to the probe positioning method of this embodiment, the measurement reproducibility of the reflection coefficient S11 (electrical characteristic) can be improved.

[0057] Although the embodiment of the present invention has been described above, the present invention is not limited to the above-described embodiment, and various changes and modifications are possible. [Explanation of symbols]

[0058] 1. High frequency characteristic inspection system 10. Probe Station 11 Pedestal 12 Sample Stage 14 First probe stage 15 Second probe stage 16. Microscope 20 Pair of Probes 21 First Probe 22 Second Probe 30 Transmitting device 40 Receiving device 50 Control device DUT Device under test

Claims

1. a first probe and a second probe each having a signal terminal and a ground terminal; A transmitting device connected to the first probe and configured to transmit a signal; a receiving device connected to the second probe and performing scalar value analysis of a received signal; a control device for controlling positions of the first probe and the second probe relative to a device under test; Equipped with The control device includes: while the first probe is in electrical contact with the device under test, gradually moving the second probe closer to the device under test, and determining the position of the second probe when the receiving device receives a signal; while the second probe is in electrical contact with the device under test, gradually moving the first probe closer to the device under test, and determining the position of the first probe when the receiving device receives a signal. High frequency characteristics inspection system.

2. the device under test includes a high-frequency device and a through pattern on a wafer or a chip; The control device includes: While the first probe is in electrical contact with one end of the through pattern, the second probe is gradually brought closer to the other end of the through pattern, and a position of the second probe is determined when the receiving device receives a signal; With the second probe in electrical contact with the one end of the through pattern, the first probe is gradually brought closer to the one end of the through pattern, and a position of the first probe is determined when the receiving device receives a signal; calculating positions of the first probe and the second probe relative to the high frequency device from the determined positions of the first probe and the second probe relative to the through pattern based on CAD data relating to a layout of the device under test; 2. The high frequency characteristic inspection system according to claim 1.

3. 3. The high frequency characteristic inspection system according to claim 1, wherein the control device determines the position of the first probe or the position of the second probe when the indication of the receiving device changes.

4. The control device includes: measuring an indication value of the receiving apparatus a plurality of times while the second probe is not in electrical contact with the device under test, calculating an average value and a standard deviation σ of the measurement results, and setting the average value + (3σ to 10σ) as a threshold value; determining a position of the first probe or a position of the second probe when the indication of the receiving device exceeds the threshold; 4. The high frequency characteristic inspection system according to claim 3.

5. the position of the first probe determined by the control device is a position where the first probe and the device under test are not in physical contact with each other but are in electrical contact with each other through electromagnetic coupling; the position of the second probe determined by the control device is a position where the second probe and the device under test are not in physical contact with each other but are in electrical contact with each other through electromagnetic coupling; 4. The high frequency characteristic inspection system according to claim 3.

6. the transmitting device is a signal generator; The receiving device is a power meter or a spectrum analyzer.

2. The high frequency characteristic inspection system according to claim 1.

7. A control device for a high frequency characteristic inspection system, comprising: a first probe and a second probe each having a signal terminal and a ground terminal; a transmitting device connected to the first probe and transmitting a signal; and a receiving device connected to the second probe and performing a scalar value analysis of the received signal, controlling a position of the first probe and the second probe relative to a device under test; while the first probe is in electrical contact with the device under test, gradually moving the second probe closer to the device under test, and determining the position of the second probe when the receiving device receives a signal; while the second probe is in electrical contact with the device under test, gradually moving the first probe closer to the device under test, and determining the position of the first probe when the receiving device receives a signal. Control device.

8. A method for positioning a first probe and a second probe in a high frequency characteristic inspection system including a first probe and a second probe each having a signal terminal and a ground terminal, a transmitting device connected to the first probe and transmitting a signal, a receiving device connected to the second probe and performing scalar value analysis of a received signal, and a control device for controlling positions of the first probe and the second probe relative to a device under test, comprising: The control device, while the first probe is in electrical contact with the device under test, gradually moving the second probe closer to the device under test, and determining the position of the second probe when the receiving device receives a signal; while the second probe is in electrical contact with the device under test, gradually moving the first probe closer to the device under test, and determining the position of the first probe when the receiving device receives a signal. Probe positioning method.

9. A high frequency characteristic inspection system including a first probe and a second probe each having a signal terminal and a ground terminal, a transmitting device connected to the first probe and transmitting a signal, a receiving device connected to the second probe and performing scalar value analysis of the received signal, and a control device for controlling positions of the first probe and the second probe relative to a device under test, the system comprising: a function of gradually approaching the second probe to the device under test while the first probe is in electrical contact with the device under test, and determining the position of the second probe when the receiving device receives a signal; a function of gradually approaching the first probe to the device under test while the second probe is in electrical contact with the device under test, and determining the position of the first probe when the receiving device receives a signal; A program for executing the above.

10. A computer-readable recording medium having the program according to claim 9 recorded thereon.

Images