Plasma processing device

Abstract

To provide a technique for adjusting cooling efficiency of an excitation electrode of a plasma processing device.SOLUTION: A plasma processing device includes a chamber, a substrate support unit, an excitation electrode, an emitter, a cooler, and a thermal resistance adjuster. The chamber provides a processing space therein. The substrate support unit is disposed in the processing space. The excitation electrode is disposed above the substrate support unit. The emitter is configured to emit electromagnetic waves into a plasma generating space below the exciting electrode. The cooler provides a flow path for heat transfer media therein. The thermal resistance adjuster includes a thermal resistance adjusting plate. The thermal resistance adjuster is configured to be capable of adjusting a shortest path length in the thermal resistance adjusting plate in a heat transfer path between the excitation electrode and the cooler.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] An exemplary embodiment of the present disclosure relates to a plasma processing apparatus. [Background technology]

[0002] Plasma processing apparatuses are used in plasma processing of substrates. One type of plasma processing apparatus is described in the following Patent Document 1. In the plasma processing apparatus described in Patent Document 1, electromagnetic waves propagate along the lower surface of an upper electrode, and the electromagnetic waves generate plasma in a chamber. The upper electrode provides a flow path therein for a heat transfer medium. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2018 / 101065 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique for adjusting the cooling efficiency of an excitation electrode of a plasma processing apparatus. [Means for solving the problem]

[0005] In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support, an excitation electrode, an emitter, a cooler, and a thermal resistance adjuster. The chamber provides a processing space therein. The substrate support is disposed in the processing space. The excitation electrode is disposed above the substrate support. The emitter is configured to emit electromagnetic waves into the plasma generation space below the excitation electrode. The cooler provides a flow path therein for a heat transfer medium. The thermal resistance adjuster includes a thermal resistance adjustment plate. The thermal resistance adjuster is configured to be able to adjust a shortest path length in the thermal resistance adjustment plate in a heat transfer path between the excitation electrode and the cooler. Effect of the Invention

[0006] According to one exemplary embodiment, a technique is provided for adjusting the cooling efficiency of an excitation electrode of a plasma processing apparatus. [Brief description of the drawings]

[0007] [Figure 1] 1 illustrates a plasma processing apparatus according to an exemplary embodiment; [Diagram 2] 2A is a partially enlarged plan view of a thermal resistance regulator according to an exemplary embodiment, and FIG 2B is a partially enlarged cross-sectional view of the thermal resistance regulator according to an exemplary embodiment. [Diagram 3] 3A and 3B are enlarged partial plan and cross-sectional views of a thermal resistance regulator according to another exemplary embodiment. [Figure 4] 4(a) and 4(b) are each a partially enlarged cross-sectional view of a thermal resistance regulator according to yet another exemplary embodiment. [Diagram 5] 5(a) and 5(b) are each a partially enlarged cross-sectional view of a thermal resistance regulator according to yet another exemplary embodiment. [Figure 6] FIG. 1 illustrates a plasma processing apparatus according to another exemplary embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Various exemplary embodiments will now be described in detail with reference to the drawings, in which the same or corresponding parts are designated by the same reference numerals.

[0009] 1 is a diagram showing a plasma processing apparatus according to an exemplary embodiment of the present invention, the plasma processing apparatus 1 shown in FIG. 1 includes a chamber 10, a substrate support 12, an excitation electrode 14, an emitter 15, a cooler 50, and a thermal resistance adjuster 6.

[0010] The chamber 10 provides a processing space 10s therein. In the plasma processing apparatus 1, the substrate W is processed in the processing space 10s. The chamber 10 is made of a metal such as aluminum and is grounded. The chamber 10 has a side wall 10a and is open at its upper end. The chamber 10 and the side wall 10a may have a substantially cylindrical shape. The processing space 10s is provided inside the side wall 10a. The central axis of each of the chamber 10, the side wall 10a, and the processing space 10s is an axis AX. The chamber 10 may have a corrosion-resistant film on its surface. The corrosion-resistant film may be a ceramic film containing an yttrium oxide film, an yttrium oxide fluoride film, an yttrium fluoride film, an yttrium oxide, or an yttrium fluoride film.

[0011] The bottom of the chamber 10 provides an exhaust port 10e. An exhaust system is connected to the exhaust port 10e. The exhaust system may include a vacuum pump, such as a dry pump and / or a turbomolecular pump, and an automatic pressure control valve.

[0012] The substrate support 12 is disposed within the processing space 10s. The substrate support 12 is configured to substantially horizontally support the substrate W placed on its upper surface. The substrate support 12 has a substantially disk shape. The central axis of the substrate support 12 is an axis AX.

[0013] The excitation electrode 14 is disposed above the substrate support 12. The excitation electrode 14 is formed from a conductor such as a metal (e.g., aluminum) and has a substantially disk shape. The central axis of the excitation electrode 14 is an axis line AX.

[0014] The excitation electrode 14 may include a shower plate 141 and an upper electrode 142. The shower plate 141 is provided above the substrate support 12. The shower plate 141 closes the opening at the upper end of the chamber 10 together with the emitter 15. The shower plate 141 provides a plurality of gas holes 14h. The plurality of gas holes 14h extend in the thickness direction (vertical direction) of the shower plate 141 and penetrate the shower plate 141.

[0015] The upper electrode 142 is provided on the shower plate 141. The upper electrode 142 forms a gas diffusion chamber 14d between the shower plate 141 and the upper electrode 142. The gas diffusion chamber 14d is connected to the gas supply unit 26. Gas from the gas supply unit 26 is discharged from a plurality of gas holes 14h through the gas diffusion chamber 14d into the processing space 10s.

[0016] The excitation electrode 14 may include a built-in heater 143. The heater 143 may be provided in the upper electrode 142. The heater 143 is connected to a heater power supply 25. The heater 143 generates heat by power provided from the heater power supply 25. The plasma processing apparatus 1 may further include a temperature sensor.

[0017] The emitter 15 is configured to emit electromagnetic waves into the plasma generation space below the excitation electrode 14. In the plasma processing apparatus 1, the plasma generation space is included in the processing space 10s, and its central axis is the axis AX. In the plasma processing apparatus 1, the electromagnetic waves emitted from the emitter 15 into the processing space 10s excite the gas in the processing space 10s to generate plasma. The electromagnetic waves emitted from the emitter 15 into the processing space 10s may be high frequency waves such as VHF waves or UHF waves. The emitter 15 is formed from a dielectric material such as quartz, aluminum nitride, or aluminum oxide. The emitter 15 is provided at a lateral end of the processing space 10s. The emitter 15 extends around the axis AX. The emitter 15 may have a ring shape.

[0018] The cooler 50 provides a flow path 50f therein for a heat transfer medium. The flow path 50f is supplied with a coolant from a chiller unit. The cooler 50 includes a wall 50w providing the flow path 50f therein. The cooler 50 may be disposed above the excitation electrode 14. In one example, the cooler 50 is formed from a metal such as aluminum. The cooler 50 may have an annular shape extending around an axis AX.

[0019] The thermal resistance adjuster 6 includes a thermal resistance adjustment plate 60. The thermal resistance adjuster 6 is configured to be capable of adjusting the shortest path length in the thermal resistance adjustment plate 60 in the heat transfer path between the excitation electrode 14 and the cooler 50. The shortest path length is the shortest path length in the heat transfer path in the thermal resistance adjustment plate 60, and is included in the heat transfer path between the excitation electrode 14 and the cooler 50. The thermal resistance adjustment plate 60 is formed from a metal. In one example, the thermal resistance adjustment plate 60 is formed from stainless steel, aluminum, copper, or an alloy including these metals.

[0020] In one embodiment, the plasma processing apparatus 1 may further include a resonator 18. The resonator 18 is disposed below the cooler 50 and above the excitation electrode 14. The resonator 18 is electromagnetically coupled to the emitter 15. The resonator 18 is configured to supply an electromagnetic wave to the emitter 15. The electromagnetic wave can propagate through the resonator 18 to the emitter 15 and be introduced from the emitter 15 into the plasma generation space. The cooler 50 is thermally connected to the excitation electrode 14 through the thermal resistance adjuster 6 and the resonator 18.

[0021] The resonator 18 may include a waveguide 20. The waveguide 20 provides a waveguide 20w. The waveguide 20w is formed by a wall made of a conductive material such as a metal. The waveguide 20 includes a first end 201 and a second end 202. The first end 201 is provided above the second end 202. The first end 201 extends in a circumferential direction so as to surround the axis AX. The first end 201 is provided by an outer periphery of the waveguide 20. The second end 202 is coupled to the emitter 15. The waveguide 20 is configured to reflect and resonate an electromagnetic wave propagating in the waveguide 20w at the first end 201 and the second end 202. The electromagnetic wave resonated in the waveguide 20 is supplied from the second end 202 to the emitter 15 and emitted into the plasma generation space.

[0022] In one embodiment, the waveguide 20w of the waveguide unit 20 may be configured axially or rotationally symmetrical with respect to the axis line AX. The waveguide unit 20 may include a plurality of annular conductor plates 210. The plurality of annular conductor plates 210 are arranged such that their centers (or central axes) are located on the axis line AX.

[0023] In one embodiment, the plasma processing apparatus 1 may include springs and supports. The example shown in FIG. 1 includes a plurality of springs 16 and a plurality of supports 17. The plurality of supports 17 are formed of a conductor such as metal. The plurality of supports 17 extend along a direction in which the axis line AX extends (i.e., a vertical direction). The plurality of supports 17 are arranged at intervals along a circumferential direction around the axis line AX. The plurality of supports 17 are arranged along each of the outer periphery and inner periphery of the plurality of annular conductor plates 210.

[0024] Each of the multiple pillars 17 is divided into multiple sections aligned along the vertical direction. The multiple sections of each of the multiple pillars 17 are arranged alternately with the multiple annular conductor plates 210 along the vertical direction. The multiple sections of each of the multiple pillars 17 and the multiple annular conductor plates 210 are fixed so as to be conductive to each other. Of the multiple sections of each of the multiple pillars 17, the section located at the topmost stage on the outer periphery of the resonator 18 constitutes the first end 201 described above.

[0025] Each of the plurality of support columns 17 and each of the plurality of portions thereof has a cylindrical shape. A plurality of bolts are passed through each of the plurality of support columns 17. The lower end of each of the plurality of bolts is screwed into a screw hole formed in the annular conductor plate extending at the lowest position among the plurality of annular conductor plates 210. The upper end of each of the plurality of bolts is located above the cooler 50. A nut is screwed into the upper end of each of the plurality of bolts. The plurality of bolts and the plurality of nuts screwed therewith fix the plurality of support columns 17, the plurality of annular conductor plates 210, and the cooler 50 to one another.

[0026] The springs 16 are provided between the resonator 18 and the cooler 50. In one example, the springs 16 are disposed between the cooler 50 and an annular conductor plate extending at the highest position among the annular conductor plates 210. Each of the springs 16 extends around a corresponding bolt among the above-mentioned bolts. The cooler 50 is elastically supported with respect to the resonator 18 by the springs 16.

[0027] The resonator 18 expands and contracts in the vertical direction due to thermal expansion. Since multiple springs 16 are provided between the resonator 18 and the cooler 50, when the resonator 18 expands in the vertical direction due to thermal expansion, each of the multiple springs 16 contracts, and the gap length between the resonator 18 and the cooler 50 decreases.

[0028] In one embodiment, the waveguide 20w may have a layered structure including an upper portion 20a and a lower portion 20b. The lower portion 20b extends radially around the axis AX toward the second end 202 of the resonator 18. The upper portion 20a extends from the first end 201 in the opposite radial direction to the axis AX above the lower portion 20b. That is, the upper portion 20a extends from the first end 201 in a direction approaching the axis AX. The waveguide 20w extends alternately in the radial direction and the opposite direction from the first end 201 to the second end 202 around the axis AX in a meandering manner.

[0029] In one embodiment, the waveguide 20w may further include an intermediate portion 20c. The intermediate portion 20c is provided between the upper portion 20a and the lower portion 20b. That is, the intermediate portion 20c is provided below the upper portion 20a and above the lower portion 20b. One end of the intermediate portion 20c is connected to an inner end of the upper portion 20a, i.e., an end of the upper portion 20a that is inner with respect to the first end 201. The other end of the intermediate portion 20c is connected to an inner end of the lower portion 20b, i.e., an end of the lower portion 20b that is inner with respect to the second end 202. The intermediate portion 20c may extend alternately in a radial direction and in the opposite direction to the radial direction so as to meander around the axis AX.

[0030] In one embodiment, the second end 202 may be made of a dielectric material and may be an annular plate interposed between the upper and lower conductor walls constituting the lower portion 20b. In order to resonate the electromagnetic wave between the first end 201 and the second end 202, the second end 202 has a lower impedance to the electromagnetic wave than the impedance of the waveguide 20w in the lower portion 20b, and therefore has a large capacitance.

[0031] The plasma processing apparatus 1 may further include a high-frequency power source 24. The high-frequency power source 24 is configured to generate high-frequency power. The electromagnetic waves introduced into the chamber 10 are generated based on the high-frequency power generated by the high-frequency power source 24. The high-frequency power source 24 may be directly connected to the resonator 18 using a coaxial line 28. That is, the high-frequency power source 24 may be coupled to the waveguide of the resonator 18 without using a matching device for impedance matching. The coaxial line 28 may include a connector 40 as a connection portion to the resonator 18. The connector 40 may be connected to the resonator 18 so as to introduce the electromagnetic waves into the resonator 18.

[0032] In the plasma processing apparatus 1 described above, it is possible to adjust the shortest path length in the thermal resistance adjusting plate 60 in the heat transfer path between the excitation electrode 14 and the cooler 50. By adjusting the shortest path length in the thermal resistance adjusting plate 60, the thermal resistance between the excitation electrode 14 and the cooler 50 is adjusted. Therefore, according to the plasma processing apparatus 1, the cooling efficiency of the excitation electrode 14 is adjusted.

[0033] Hereinafter, the thermal resistance adjuster 6 will be described in detail with reference to Fig. 2(a) and Fig. 2(b). Fig. 2(a) is a partially enlarged plan view of the thermal resistance adjuster according to an exemplary embodiment. Fig. 2(b) is a partially enlarged cross-sectional view of the thermal resistance adjuster according to an exemplary embodiment.

[0034] In one embodiment, the thermal resistance adjuster 6 may further include a first spacer 61 and a second spacer 62. The first spacer 61 is interposed between the cooler 50 and the thermal resistance adjustment plate 60. The cooler 50 and the thermal resistance adjustment plate 60 are thermally connected via the first spacer 61. The second spacer 62 is interposed between the resonator 18 and the thermal resistance adjustment plate 60. The resonator 18 and the thermal resistance adjustment plate 60 are thermally connected via the second spacer 62. Each of the first spacer 61 and the second spacer 62 is made of a metal. Each of the first spacer 61 and the second spacer 62 is made of, for example, stainless steel, aluminum, copper, or an alloy containing these metals. The shortest path length a1 in the thermal resistance adjustment plate 60 in the heat transfer path between the excitation electrode 14 and the cooler 50 is the length of a portion between the first spacer 61 and the second spacer 62 in the thermal resistance adjustment plate 60.

[0035] In one embodiment, the thermal resistance adjuster 6 may further include a first fixing member 63 and a second fixing member 64. The first fixing member 63 fixes the first spacer 61 and the thermal resistance adjustment plate 60 to each other. The second fixing member 64 fixes the second spacer 62 and the thermal resistance adjustment plate 60 to each other. The thermal resistance adjustment plate 60 provides a plurality of openings 60h arranged along the direction of the shortest path length a1. The plurality of openings 60h penetrate the thermal resistance adjustment plate 60 in its plate thickness direction. The first fixing member 63 passes through one of the plurality of openings 60h to fix the first spacer 61 and the thermal resistance adjustment plate 60 to each other. The second fixing member 64 passes through the other one of the plurality of openings 60h to fix the second spacer 62 and the thermal resistance adjustment plate 60 to each other.

[0036] In one example, the first fixing member 63 may include a screw 63s and a fastening member 63a, and the second fixing member 64 may include a screw 64s and a fastening member 64a. Each of the first spacer 61 and the second spacer 62 may be ring-shaped or cylindrical. The wall 50w of the cooler 50 may provide a plurality of openings 50h. The plurality of openings 50h are arranged along the direction of the shortest path length a1, and each of them is aligned with the corresponding opening 60h. The screw 63s passes through one of the plurality of openings 60h, an inner hole of the first spacer 61, and one of the plurality of openings 50h, and is fixed to the fastening member 63a. The fastening member 63a is, for example, a nut.

[0037] The screw 64s passes through another one of the multiple openings 60h, an inner hole of the second spacer 62, another one of the multiple openings 50h, and a through hole of the annular conductor plate extending at the highest position of the multiple annular conductor plates 210, and is fixed to the fastening member 64a. The fastening member 64a is, for example, a nut. In one embodiment, the second spacer 62 may thermally connect the resonator 18 and the thermal resistance adjustment plate 60 through another one of the multiple openings 50h. A gap may be defined between the second spacer 62 and an inner wall of another one of the multiple openings 50h. When a gap is defined between the second spacer 62 and an inner wall of another one of the multiple openings 50h, the second spacer 62 and the wall 50w of the cooler 50 are separated from each other, and direct heat exchange between them is suppressed.

[0038] In the thermal resistance adjuster 6, the shortest path length a1 can be adjusted by selecting, from among the multiple openings 60h, an opening through which the first fixing member 63 passes and another opening through which the second fixing member 64 passes. Therefore, the thermal resistance adjuster 6 can adjust the thermal resistance between the excitation electrode 14 and the cooler 50.

[0039] Hereinafter, a thermal resistance adjuster according to another exemplary embodiment will be described with reference to Fig. 3(a) and Fig. 3(b). Fig. 3(a) is a partially enlarged plan view of a thermal resistance adjuster according to another exemplary embodiment. Fig. 3(b) is a partially enlarged cross-sectional view of a thermal resistance adjuster according to another exemplary embodiment. Hereinafter, a thermal resistance adjuster 6A shown in Fig. 3(a) and Fig. 3(b) will be described from the viewpoint of differences from the thermal resistance adjuster 6.

[0040] The thermal resistance adjuster 6A includes a thermal resistance adjustment plate 60A instead of the thermal resistance adjustment plate 60. The thermal resistance adjustment plate 60A provides slit holes 60s and openings 60t. The slit holes 60s extend along the direction of the shortest path length a1. The slit holes 60s and openings 60t are arranged along the direction of the shortest path length a1. The slit holes 60s and openings 60t each penetrate the thermal resistance adjustment plate 60A in its plate thickness direction. A first fixing member 63 (e.g., a screw 63s) passes through the slit holes 60s and fixes the first spacer 61 and the thermal resistance adjustment plate 60A to each other. The wall 50w of the cooler 50 may provide slit holes 50s and openings 50t formed corresponding to the slit holes 60s and openings 60t, respectively. The first fixing member 63 passes through the slit hole 60s, the inner hole of the first spacer 61, and the slit hole 50s, and is fixed by the fastening member 63a. The second fixing member 64 passes through the opening 60t, the inner hole of the second spacer 62, and the opening 50t, and is fastened to the fastening member 64a. The thermal resistance adjusting plate 60A may include a scale 60g arranged along the slit hole 60s.

[0041] In the thermal resistance adjuster 6A, the shortest path length a1 is also the length of the portion between the first spacer 61 and the second spacer 62 in the thermal resistance adjusting plate 60A. In the thermal resistance adjuster 6A, the shortest path length a1 can be adjusted by adjusting the position of the first fixing member 63 passed through the slit hole 60s. Therefore, the thermal resistance adjuster 6A can adjust the thermal resistance. Moreover, the position of the first fixing member 63 passed through the slit hole 60s can be more accurately adjusted by referring to the scale 60g.

[0042] Hereinafter, a thermal resistance adjuster according to yet another exemplary embodiment will be described with reference to Fig. 4(a) and Fig. 4(b). Fig. 4(a) and Fig. 4(b) are each a partially enlarged cross-sectional view of a thermal resistance adjuster according to yet another exemplary embodiment. Hereinafter, a thermal resistance adjuster 6B shown in Fig. 4(a) and Fig. 4(b) will be described from the viewpoint of differences from the thermal resistance adjuster 6.

[0043] The thermal resistance adjuster 6B includes a thermal resistance adjustment plate 60B instead of the thermal resistance adjustment plate 60. The thermal resistance adjuster 6B does not include the first spacer 61 and the second spacer 62. The thermal resistance adjuster 6B includes a spacer 67. The thermal resistance adjustment plate 60B includes a first portion 65 and a second portion 66. The first portion 65 is fixed to the cooler 50. The first portion 65 may be directly fixed to the cooler 50, for example. The spacer 67 is interposed between the resonator 18 and the second portion 66. In one example, the second portion 66 is fixed to the spacer 67, and the spacer 67 is fixed to the resonator 18. The second portion 66 and the resonator 18 are thermally connected via the spacer 67. The thermal resistance adjustment plate 60B has flexibility so that the length of the portion in contact with the cooler 50 changes due to a change in the gap length between the resonator 18 and the cooler 50 caused by the thermal expansion of the resonator 18.

[0044] In one embodiment, the cooler 50 may have a sloping surface or a curved surface. In the example shown in FIG. 4, the cooler 50 has a curved surface 50a. The cooler 50 may have a sloping surface instead of the curved surface 50a. The curved surface 50a faces the thermal resistance adjusting plate 60B. The curved surface 50a is configured such that the distance from the resonator 18 increases as the distance from the position where the first portion 65 is fixed increases. In one example, the curved surface 50a is configured such that the distance from the resonator 18 increases in a direction facing the thermal resistance adjusting plate 60B as the distance from the position where the first portion 65 is fixed increases.

[0045] In the thermal resistance adjuster 6B, the thermal resistance adjusting plate 60B curves closer to the curved surface 50a due to the reduction in the gap length between the resonator 18 and the cooler 50 caused by the thermal expansion of the resonator 18, and the length of the portion of the thermal resistance adjusting plate 60B in contact with the cooler 50 increases. Therefore, in the thermal resistance adjuster 6B, the thermal expansion of the resonator 18 reduces the thermal resistance between the excitation electrode 14 and the cooler 50. Therefore, in the thermal resistance adjuster 6B, the cooling efficiency of the excitation electrode 14 automatically increases in response to the temperature rise of the resonator 18.

[0046] Hereinafter, a thermal resistance adjuster according to yet another exemplary embodiment will be described with reference to Fig. 5(a) and Fig. 5(b). Fig. 5(a) and Fig. 5(b) are each a partially enlarged cross-sectional view of a thermal resistance adjuster according to yet another exemplary embodiment. Hereinafter, a thermal resistance adjuster 6C shown in Fig. 5(a) and Fig. 5(b) will be described from the viewpoint of differences from the thermal resistance adjuster 6B.

[0047] The thermal resistance adjuster 6C includes a thermal resistance adjustment plate 60C instead of the thermal resistance adjustment plate 60B. The thermal resistance adjustment plate 60C has flexibility so that the length of the portion in contact with the cooler 50 changes depending on the temperature. Specifically, the thermal resistance adjustment plate 60C is a bimetal and includes a first member 60a and a second member 60b. Each of the first member 60a and the second member 60b is plate-shaped. The first member 60a and the second member 60b are bonded to each other to form a single thermal resistance adjustment plate 60C. The first member 60a is positioned so as to face the cooler 50. The second member 60b is positioned so as to face the resonator 18. The first member 60a and the second member 60b have different thermal expansion coefficients. The thermal expansion coefficient of the first member 60a is larger than the thermal expansion coefficient of the second member 60b.

[0048] In the thermal resistance adjuster 6C, when the temperature of the thermal resistance adjusting plate 60C rises in response to a temperature rise of the resonator 18, the thermal resistance adjusting plate 60C curves toward the curved surface 50a of the cooler 50, and the length of the portion of the thermal resistance adjusting plate 60C in contact with the cooler 50 increases. Therefore, in the thermal resistance adjuster 6C, the thermal resistance between the excitation electrode 14 and the cooler 50 automatically decreases in response to a temperature rise of the resonator 18. Therefore, in the thermal resistance adjuster 6C, the cooling efficiency of the excitation electrode 14 automatically increases in response to a temperature rise of the resonator 18.

[0049] 5(a) and 5(b), a plurality of heat insulating members 19 are provided between the cooler 50 and the resonator 18 instead of the plurality of springs 16. The heat conductivity coefficient of each of the plurality of heat insulating members 19 is smaller than the heat conductivity coefficient of each of the plurality of supports 17. In the heat resistance adjuster 6C, even if the gap length between the resonator 18 and the cooler 50 does not change, the heat resistance between the excitation electrode 14 and the cooler 50 is automatically reduced by bending the heat resistance adjusting plate 60C.

[0050] Hereinafter, a plasma processing apparatus according to another exemplary embodiment will be described with reference to Fig. 6. Fig. 6 is a diagram showing a plasma processing apparatus according to another exemplary embodiment. Hereinafter, a plasma processing apparatus 1D shown in Fig. 6 will be described from the viewpoint of differences from the plasma processing apparatus 1.

[0051] The plasma processing apparatus 1D includes a plurality of thermal resistance adjusters 6. Each of the plurality of thermal resistance adjusters 6 corresponds to the thermal resistance adjuster 6 described above. Each of the plurality of thermal resistance adjusters 6 may correspond to any of the thermal resistance adjusters 6A, 6B, and 6C described above. At least one of the plurality of thermal resistance adjusters 6 may be arranged such that the direction of its shortest path length a1 is along the radial direction of the chamber 10 and the excitation electrode 14. At least one of the plurality of thermal resistance adjusters 6 may be arranged such that the direction of its shortest path length a1 intersects with the radial direction of the chamber 10 and the excitation electrode 14. In the example shown in FIG. 6, a first thermal resistance adjuster of the plurality of thermal resistance adjusters 6 is arranged such that the direction of its shortest path length a1 is along the radial direction of the chamber 10 and the excitation electrode 14. In addition, a second thermal resistance regulator among the multiple thermal resistance regulators 6 is arranged so that the direction of its shortest path length a1 intersects the radial direction of the chamber 10 and the excitation electrode 14 and is parallel to the direction of the shortest path length a1 of the first thermal resistance regulator.

[0052] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. In addition, elements in different embodiments can be combined to form other embodiments.

[0053] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various changes may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims. [Explanation of symbols]

[0054] 1,1D...plasma processing apparatus, 6,6A,6B,6C...thermal resistance adjuster, 10...chamber, 10s...processing space, 12...substrate support, 14...excitation electrode, 15...emitter, 61...first spacer, 62...second spacer, 67...spacer, 18...resonator, 19...multiple springs, 50...cooler, 50a...curved surface, 50f...flow path, 50h...multiple openings, 50s...slit holes, 60,60A,60B,60C...thermal resistance adjustment plate, 60g...scale, 63...first fixing member, 64...second fixing member, 65...first part, 66...second part, a1...shortest path length.

Claims

1. a chamber providing a processing space therein; a substrate support disposed within the processing space; an excitation electrode disposed above the substrate support; an emitter configured to emit electromagnetic waves into a plasma generation space below the excitation electrode; a cooler providing a flow path therein for a heat transfer medium; a thermal resistance adjuster including a thermal resistance adjustment plate and configured to be able to adjust a shortest path length in the thermal resistance adjustment plate in a heat transfer path between the excitation electrode and the cooler; A plasma processing apparatus comprising:

2. a resonator disposed below the cooler and above the excitation electrode, the resonator being electromagnetically coupled to the emitter; the thermal resistance adjuster thermally connects the cooler to the excitation electrode via the resonator; The plasma processing apparatus according to claim 1 .

3. The thermal resistance regulator comprises: a first spacer interposed between the cooler and the thermal resistance adjustment plate; a second spacer interposed between the resonator and the thermal resistance adjustment plate; Further comprising: the shortest path length is a length of a portion of the thermal resistance adjustment plate between the first spacer and the second spacer; The plasma processing apparatus according to claim 2 .

4. The thermal resistance regulator comprises: a first fixing member that fixes the first spacer and the thermal resistance adjustment plate to each other; a second fixing member that fixes the second spacer and the thermal resistance adjustment plate to each other; Further comprising: The thermal resistance adjustment plate has a plurality of openings arranged along the direction of the shortest path length, the first fixing member passes through one of the plurality of openings and fixes the first spacer and the thermal resistance adjustment plate to each other; the second fixing member passes through another one of the plurality of openings and fixes the second spacer and the thermal resistance adjustment plate to each other; The plasma processing apparatus according to claim 3 .

5. The thermal resistance regulator comprises: a first fixing member that fixes the first spacer and the thermal resistance adjustment plate to each other; a second fixing member that fixes the second spacer and the thermal resistance adjustment plate to each other; Further comprising: the thermal resistance adjustment plate has a slit hole extending along the direction of the shortest path length, the first fixing member passes through the slit hole and fixes the first spacer and the thermal resistance adjustment plate to each other; The plasma processing apparatus according to claim 3 .

6. The plasma processing apparatus according to claim 5 , wherein the thermal resistance adjustment plate includes a scale arranged along the slit hole.

7. The thermal resistance adjusting plate includes a first portion and a second portion, The first portion is fixed to the cooler, the thermal resistance adjuster further includes a spacer interposed between the resonator and the second portion; the thermal resistance adjustment plate has flexibility such that the length of a portion of the thermal resistance adjustment plate that is in contact with the cooler changes in response to a change in a gap length between the resonator and the cooler due to thermal expansion of the resonator. The plasma processing apparatus according to claim 2 .

8. a spring disposed between the cooler and the resonator; the cooler is supported against the resonator by the spring; The plasma processing apparatus according to claim 7 .

9. 9. The plasma processing apparatus according to claim 7, wherein the cooler has an inclined surface or a curved surface facing the thermal resistance adjustment plate, the inclined surface or the curved surface being configured such that the distance from the resonator increases as the distance from the position where the first portion is fixed increases.

10. The thermal resistance adjusting plate includes a first portion and a second portion, The first portion is fixed to the cooler, the thermal resistance adjuster further includes a spacer interposed between the resonator and the second portion; the thermal resistance adjustment plate is a bimetal and has flexibility so that the length of the portion of the thermal resistance adjustment plate that contacts the cooler changes depending on the temperature; The plasma processing apparatus according to claim 2 .

11. 11. The plasma processing apparatus according to claim 10, wherein the cooler and the thermal resistance adjustment plate have an inclined or curved surface facing each other, the inclined or curved surface having a distance from the resonator increasing as the distance from the position where the first portion is fixed increases.

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