Manufacturing method of semiconductor device, and wire bonding device

Abstract

To provide: a manufacturing method of a semiconductor device capable of improving a success rate of wire bonding; and a wire bonding device.SOLUTION: A manufacturing method of a semiconductor device includes: a first bonding step of bonding a wire 50 to an electrode 14 using a capillary 31; a feeding-out step of moving the capillary 31 in such a manner that a distal end region 51 of the wire 50 and an intermediate region 52 of the wire 50 are led out of the capillary 31; a bending step of iteratively bending each of a first bent part 54 of the wire 50 and a second bent part 55 of the wire 50; a tensing step of forming a pin wire 12, which is bonded to the electrode 14, by tensing the wire 50 in such a manner that the wire 50 is cut in the first bent part 54; a removing step of removing the intermediate region 52 and the second bent part 55 from the wire 50 by bonding the intermediate region 52 to a dummy region 11b; and a second bonding step of bonding a proximal end region 53 to a new electrode 14.SELECTED DRAWING: Figure 8

Description

[Technical field]

[0001] The present invention relates to a method for manufacturing a semiconductor device and a wire bonding apparatus. [Background technology]

[0002] A technique related to wire bonding is known (see, for example, Patent Document 1). In such a technique, after a tip of a wire is bonded to an electrode, each of a plurality of bent portions of the wire is repeatedly bent. When the wire is cut at one of the bent portions that is closest to the electrode, a pin wire bonded to the electrode is formed. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-128982 Summary of the Invention [Problem to be solved by the invention]

[0004] In the above-mentioned technique, the bent portion away from the electrode may remain on the wire even after the pin wire is formed. Therefore, the wire may be cut at the remaining bent portion at the next wire bonding instead of the intended cutting position. In such a case, it is necessary to improve the success rate of wire bonding.

[0005] An object of the present invention is to provide a semiconductor device manufacturing method and a wire bonding apparatus that can increase the success rate of wire bonding. [Means for solving the problem]

[0006] The method for manufacturing a semiconductor device of the present invention includes a first bonding step of bonding a wire to a first electrode using a capillary, a payout step of drawing out from the capillary a tip region of the wire bonded to the first electrode and a middle region of the wire located on the opposite side of the first electrode from the tip region by moving the capillary away from the first electrode while the wire is in a payout state, and a second bend step of drawing out from the capillary a tip region of the wire bonded to the first electrode and a middle region of the wire located on the opposite side of the first electrode from the tip region by repeating the steps of moving the capillary toward the first electrode while holding the wire and moving the capillary away from the first electrode. the intermediate region and the second bend portion located between the intermediate region and the base region, which is located on the opposite side of the intermediate region from the tip region; a pulling process in which the capillary is moved away from the first electrode while holding the wire, thereby pulling the wire so that the wire is cut at the first bend portion, thereby forming a pin wire joined to the first electrode; a removing process in which the intermediate region and the second bend portion are removed from the wire by joining the intermediate region to a dummy region using the capillary; and a second joining process in which the capillary is used to join the base region to the second electrode.

[0007] In this method for manufacturing a semiconductor device, after the pin wire bonded to the first electrode is formed, the intermediate region and the second bent portion are removed from the wire. This removes the second bent portion remaining in the wire from the wire, thereby preventing the wire from being cut at a position other than the intended cutting position in the next pulling step. Therefore, this method for manufacturing a semiconductor device increases the success rate of wire bonding.

[0008] The first joining step may include a step of melting the tip of the tip region and a step of joining the tip of the tip region to the first electrode, and the removing step may include a step of melting the tip of the intermediate region, a step of joining the tip of the intermediate region to the dummy region, a step of pulling the wire so that the wire is cut at the second bent portion, and a step of melting the tip of the base region. This not only ensures that the intermediate region and the second bent portion are removed from the wire, but also allows the removing step to be performed in the same manner as at least a part of each of the first joining step and the pulling step, thereby simplifying the process.

[0009] The dummy region may be a region of the surface of the semiconductor chip including the first electrode that is separated from the first electrode, which makes it possible to easily secure the dummy region.

[0010] The wire bonding apparatus of the present invention comprises a bonding unit including a capillary configured to be able to supply wire, and a control unit that controls the operation of the bonding unit, and the control unit outputs a first signal to bond the wire to a first electrode using the capillary, a second signal to cause the capillary to move away from the first electrode while the wire is able to be paid out, thereby leading out from the capillary a tip region of the wire joined to the first electrode and an intermediate region of the wire located on the opposite side of the first electrode from the tip region, and repeats an operation of bringing the capillary close to the first electrode while holding the wire and an operation of moving the capillary away from the first electrode, thereby leading out the tip region of the wire joined to the first electrode and an intermediate region of the wire located on the opposite side of the first electrode from the tip region. A third signal is sent to the bonding unit to repeatedly bend the first bend located between the tip region and the intermediate region, and the second bend located between the base region located on the opposite side of the wire from the tip region with respect to the intermediate region, a fourth signal is sent to the bonding unit to pull the wire so that the wire is cut at the first bend by moving the capillary away from the first electrode while holding the wire, a fifth signal is sent to the bonding unit to remove the intermediate region and the second bend from the wire by using the capillary to join the intermediate region to a dummy region, and a sixth signal is sent to the bonding unit to join the tip of the base region to the second electrode.

[0011] According to this wire bonding apparatus, the success rate of wire bonding is increased, similarly to the above-mentioned method for manufacturing a semiconductor device. Effect of the Invention

[0012] According to the present invention, it is possible to provide a semiconductor device manufacturing method and a wire bonding apparatus that can increase the success rate of wire bonding. [Brief description of the drawings]

[0013] [Figure 1] 1 is a configuration diagram of a wire bonding apparatus according to an embodiment; [Diagram 2] 1 is a plan view of a semiconductor device according to an embodiment; [Diagram 3] FIG. 3 is a cross-sectional view taken along line III-III in FIG. [Figure 4] 2 is a flowchart of a method for manufacturing a semiconductor device according to an embodiment. [Diagram 5] 1A to 1C are diagrams illustrating steps of a manufacturing method of a semiconductor device according to an embodiment; [Figure 6] 1A to 1C are diagrams illustrating steps of a manufacturing method of a semiconductor device according to an embodiment; [Figure 7] 1A to 1C are diagrams illustrating steps of a manufacturing method of a semiconductor device according to an embodiment; [Figure 8] 1A to 1C are diagrams illustrating steps of a manufacturing method of a semiconductor device according to an embodiment; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. In each drawing, the same or corresponding parts are denoted by the same reference numerals, and duplicated explanations will be omitted.

[0015] Fig. 1 is a configuration diagram of a wire bonding apparatus according to this embodiment. The wire bonding apparatus 10 shown in Fig. 1 is an apparatus for manufacturing a semiconductor device 1 (see Fig. 2). As shown in Fig. 1, the wire bonding apparatus 10 includes a transport unit 20, a bonding unit 30, and a control unit 40. The transport unit 20 transports a semiconductor chip 11 to a bonding area. The bonding unit 30 includes a capillary 31, a wire clamper 32, a bonding tool 33, and a moving mechanism 34.

[0016] The capillary 31 is configured to be able to supply the wire 50. The capillary 31 has, for example, a cylindrical shape. The diameter of the tip 31a of the capillary 31 is smaller than the diameter of the base end of the capillary 31. The wire 50 is inserted into the internal space of the capillary 31. The wire 50 is introduced into the base end of the capillary 31 and led out from the tip 31a of the capillary 31. The capillary 31 provides heat, ultrasonic waves, or pressure to the wire 50. The capillary 31 is attached to a bonding tool 33. The capillary 31 is detachable from the bonding tool 33.

[0017] The wire clamper 32 is disposed on the opposite side of the capillary 31 from the semiconductor chip 11. The wire clamper 32 has an opening / closing mechanism. The wire 50 passes through the opening / closing mechanism of the wire clamper 32. When the wire clamper 32 is in a closed state, the wire 50 is clamped by the wire clamper 32, and as a result, the movement of the wire 50 relative to the capillary 31 is stopped. When the wire clamper 32 is in an open state, the clamping of the wire 50 by the wire clamper 32 is released, and as a result, the movement of the wire 50 relative to the capillary 31 is permitted.

[0018] The bonding tool 33 is fixed to a moving mechanism 34. The moving mechanism 34 moves the bonding tool 33, thereby moving the capillary 31 relative to the semiconductor chip 11.

[0019] The control unit 40 controls the operations of the transport unit 20 and the bonding unit 30. The control unit 40 transmits control signals to each of the transport unit 20 and the bonding unit 30. The control unit 40 controls the position of the capillary 31 relative to the semiconductor chip 11 by controlling the operation of the moving mechanism 34. The control unit 40 controls the application of heat, ultrasonic waves or pressure by the capillary 31. The control unit 40 controls the opening and closing of the wire clamper 32.

[0020] 2 and 3, the semiconductor device 1 has a semiconductor chip 11, a plurality of pin wires 12, and a plurality of dummy bonding portions (compression-bonded balls) 13. The semiconductor chip 11 is provided on, for example, a main surface of a circuit board. The plurality of pin wires 12 are provided on a surface 11a of the semiconductor chip 11. The plurality of pin wires 12 are lined up along the Y-axis direction. The plurality of dummy bonding portions 13 are provided on the surface 11a of the semiconductor chip 11. The plurality of dummy bonding portions 13 are lined up along the Y-axis direction. The plurality of pin wires 12 and the plurality of dummy bonding portions 13 are adjacent to each other in the X-axis direction.

[0021] The semiconductor chip 11 has a plurality of electrodes (first electrodes) 14. The plurality of electrodes 14 are aligned along the Y-axis direction. Each electrode 14 is exposed on the surface 11a of the semiconductor chip 11. The surface 11a of the semiconductor chip 11 includes a plurality of dummy regions 11b. The dummy regions 11b are regions of the surface 11a of the semiconductor chip 11 that are separated from the electrodes 14. The plurality of dummy regions 11b are aligned along the Y-axis direction. The plurality of electrodes 14 and the plurality of dummy regions 11b are adjacent to each other in the X-axis direction.

[0022] A pin wire 12 is formed on each electrode 14. The pin wire 12 extends along the Z-axis direction (a direction perpendicular to the surface 11a of the semiconductor chip 11). The tip of the pin wire 12 is joined to an electrode of another semiconductor chip. The semiconductor chip 11 and the other semiconductor chip are electrically connected by the pin wire 12.

[0023] The cross section of the pin wire 12 is, for example, circular. The diameter of the pin wire 12 is, for example, about 20 μm. The length of the pin wire 12 is, for example, 100 μm or more. The material of the pin wire 12 is, for example, gold (Au), silver (Ag), aluminum (Al), copper (Cu), or an alloy thereof.

[0024] In the dummy region 11b, a dummy bonding portion 13 is formed. The dummy bonding portion 13 is not bonded to electrodes of other semiconductor chips. The dummy bonding portion 13 does not function as a component of the semiconductor device 1.

[0025] Next, a description will be given of a manufacturing method of the semiconductor device 1. As shown in Fig. 4, the manufacturing method of the semiconductor device 1 includes a first bonding step S1, a feeding step S2, a bending step S3, a pulling step S4, a removing step S5, and a second bonding step S6.

[0026] The first joining step S1 includes steps S11 and S12. In the first joining step S1, the wire 50 is joined to the electrode 14 using the capillary 31. Specifically, as shown in FIG. 5(a), in step S11, a spherical FAB (Free Air Ball) 57 is formed at the tip (tail) 50a of the wire 50. In step S11, while the wire 50 is inserted into the capillary 31, discharge or the like is generated by an electric torch at the tip 50a. This melts the tip 50a (the tip of a tip region 51 described later). When the melted tip 50a solidifies, the FAB 57 is formed. The FAB is also called an initial ball or an initial ball.

[0027] 5(b), in step S12, while the wire clamper 32 is maintained in an open state, ultrasonic waves are emitted from the capillary 31 and the capillary 31 is moved closer to the electrode 14. This causes the FAB 57 to be pressed against the electrode 14, resulting in the FAB 57 being deformed and bonded to the electrode 14. When the FAB 57 is bonded to the electrode 14, a bonded portion 58 is formed. In a first bonding step S1, the control unit 40 transmits a first signal to the bonding unit 30 to bond the wire 50 to the electrode 14 using the capillary 31.

[0028] As shown in FIG. 4, the unwinding step S2 includes steps S21 and S22. In the unwinding step S2, a part of the wire 50 is drawn out from the capillary 31 by an operation of moving the capillary 31 away from the electrode 14 while the wire 50 is in a state where it can be unwound. Specifically, as shown in FIG. 5(c), in step S21, the capillary 31 is moved to a position away from the electrode 14 in the Z-axis direction and away from the electrode 14 in the XY plane (see FIGS. 2 and 3) while the wire clamper 32 is maintained in an open state. In step S21, the tip region 51 of the wire 50 is drawn out from the capillary 31. The tip region 51 is a region of the wire 50 that is joined to the electrode 14. In step S21, the capillary 31 may be moved, for example, linearly, or may be moved, for example, along the Z-axis direction and then along the XY plane.

[0029] 6(a), in step S22, while the wire clamper 32 is maintained in an open state, the capillary 31 is moved to a position that is further away from the electrode 14 in the Z-axis direction and overlaps with the electrode 14 in the XY plane. In step S22, the intermediate region 52 of the wire 50 is led out from the capillary 31. The intermediate region 52 is a region of the wire 50 that is located on the opposite side of the electrode 14 with respect to the tip region 51. In the pay-out step S2, the control unit 40 sends a second signal to the bonding unit 30 to cause the tip region 51 and the intermediate region 52 to be led out from the capillary 31 by an operation of moving the capillary 31 away from the electrode 14 in a state in which the wire 50 can be paid out.

[0030] In the bending step S3, the capillary 31 is repeatedly moved toward the electrode 14 while holding the wire 50, and moved away from the electrode 14. Specifically, as shown in (b) and (c) of FIG. 6, in the bending step S3, the capillary 31 is reciprocated along the Z-axis direction while the wire clamper 32 is maintained in a closed state. In the bending step S3, the first bent portion 54, the second bent portion 55, and the third bent portion 56 are repeatedly bent. The first bent portion 54 is a region of the wire 50 located between the tip region 51 and the intermediate region 52. The second bent portion 55 is a region of the wire 50 located between the intermediate region 52 and the base region 53. The third bent portion 56 is a region of the wire 50 including a joint portion joined to the electrode 14.

[0031] Each of the first bent portion 54, the second bent portion 55, and the third bent portion 56 is formed by plastic deformation of the wire 50. When the capillary 31 moves back and forth in the Z-axis direction, the mechanical strength of the first bent portion 54 decreases due to fatigue of the first bent portion 54. In the bending step S2, the control unit 40 repeats an operation of moving the capillary 31 closer to the electrode 14 and an operation of moving the capillary 31 away from the electrode 14 while holding the wire 50, thereby transmitting a third signal to the bonding unit 30 to repeatedly bend each of the first bent portion 54, the second bent portion 55, and the third bent portion 56.

[0032] In the pulling step S4, the capillary 31 is moved away from the electrode 14 while holding the wire 50, thereby pulling the wire 50. Specifically, as shown in FIG. 7A, in the pulling step S4, the capillary 31 is moved away from the electrode 14 along the Z-axis direction while the wire clamper 32 is maintained in the closed state. In the pulling step S4, the wire 50 is pulled so as to be cut at the first bent portion 54. This forms the pin wire 12 joined to the electrode 14. In the pulling step S4, the control unit 40 sends a fourth signal to the bonding unit 30 to form the pin wire 12 joined to the electrode 14 by moving the capillary 31 away from the electrode 14 while holding the wire 50, thereby pulling the wire 50 so as to be cut at the first bent portion 54. Note that a part of the first bent portion 54 remains in each of the tip region 51 and the intermediate region 52.

[0033] As shown in Fig. 4, the removal step S5 includes steps S51, S52, S53, and S54. In the removal step S5, the intermediate region 52 and the second bent portion 55 are removed from the wire 50 by joining the intermediate region 52 to the dummy region 11b using the capillary 31. Specifically, as shown in Fig. 7(b), in step S51, a new tip 50b (tip of the intermediate region 52) of the wire 50 is melted in the same manner as in step S11, and as a result, a new FAB 57A is formed. The length of the intermediate region 52 melted in step S51 is longer than the length of the tip region 51 melted in step S11. In this embodiment, most of the intermediate region 52 is melted.

[0034] 7(c), in step S52, similarly to step S12, the FAB 57A is pressed against the dummy region 11b, whereby the tip 50b of the wire 50 is bonded to the dummy region 11b, and a new bonding portion 58A is formed.

[0035] 8(a), in step S53, while the wire clamper 32 is maintained in the closed state, the capillary 31 is moved along the Z-axis direction away from the dummy region 11b. In step S53, the wire 50 is pulled so as to be cut at the second bent portion 55. As a result, a dummy bonding portion 13 bonded to the dummy region 11b is formed, and the intermediate region 52 is removed from the wire 50. Note that a portion of the second bent portion 55 remains in the base end region 53.

[0036] 8(b), in step S54, a new tip 50c (the tip of the base end region 53) of the wire 50 is melted to form a new FAB 57B. This removes the second bent portion 55 remaining in the base end region 53. Thus, in the removing step S5, the intermediate region 52 and the second bent portion 55 are removed from the wire 50 by so-called ball bonding. In the removing step S5, the control unit 40 sends a fifth signal to the bonding unit 30 to remove the intermediate region 52 and the second bent portion 55 from the wire 50 by bonding the intermediate region 52 to the dummy region 11b using the capillary 31. According to the removing step S5, all regions where fatigue has occurred due to bending are removed from the wire 50.

[0037] 8(c), in a second bonding step S6, similarly to step S12, the FAB 57B is pressed against the new electrode (second electrode) 14. As a result, the tip 50c of the wire 50 is bonded to the new electrode 14, and a new bonding portion 58B is formed. In the second bonding step S6, the control unit 40 transmits a sixth signal to the bonding unit 30 to bond the tip 50c of the wire 50 to the new electrode 14. In this embodiment, the above-mentioned steps are repeated to form a plurality of pin wires 12 and a plurality of dummy bonding portions 13.

[0038] As described above, in the manufacturing method of the semiconductor device 1, after the pin wire 12 joined to the electrode 14 is formed, the intermediate region 52 and the second bent portion 55 are removed from the wire 50. This removes the second bent portion 55 remaining in the wire 50 from the wire 50, thereby preventing the wire 50 from being cut at a position different from the intended cutting position in the next pulling step S4. Therefore, this manufacturing method of the semiconductor device 1 increases the success rate of wire bonding.

[0039] The first joining step S1 includes a step of melting the tip 50a (tip of the tip region 51) of the wire 50 (step S11) and a step of joining the tip 50a to the electrode 14 (step S12). The removal step S5 includes a step of melting the tip 50b (tip of the intermediate region 52) of the wire 50 (step S51), a step of joining the tip 50b to the dummy region 11b (step S52), a step of pulling the wire 50 so that the wire 50 is cut at the second bent portion 55 (step S53), and a step of melting the tip 50c (tip of the base region 53) of the wire 50 (step S54). This not only ensures that the intermediate region 52 and the second bent portion 55 are removed from the wire 50, but also allows the removal step S5 to be performed in the same manner as at least a part of each of the first joining step S1 and the pulling step S4, thereby realizing simplification of the process.

[0040] The dummy region 11b is a region of the front surface 11a of the semiconductor chip 11 that includes the electrodes 14 and is separated from the electrodes 14. This makes it possible to easily secure the dummy region 11b.

[0041] As with the manufacturing method of the semiconductor device 1 described above, the wire bonding apparatus 10 increases the success rate of wire bonding.

[0042] Although one embodiment of the present invention has been described above, the present invention is not limited to the above-described embodiment.

[0043] In the embodiment, an example in which the intermediate region 52 and the second bent portion 55 are removed from the wire 50 by ball bonding has been shown, but the intermediate region 52 and the second bent portion 55 may be removed from the wire 50 by, for example, wedge bonding. Specifically, after the pulling step S4, a part of the base end region 53 is led out from the capillary 31 while the open state of the wire clamper 32 is maintained. Then, the capillary 31 is moved so as to approach the dummy region 11b. As a result, a predetermined region of the base end region 53 is pressed against the dummy region 11b, and the base end region 53 is bonded to the dummy region 11b. When the base end region 53 is pressed against the dummy region 11b, heat or ultrasonic waves may be provided from the capillary 31. Then, while the closed state of the wire clamper 32 is maintained, the capillary 31 is moved away from the dummy region 11b so that the base end region 53 is cut. Like ball bonding, wedge bonding also removes areas of fatigue from wire 50 due to bending.

[0044] In the embodiment, an example in which the wire 50 is cut at the first bent portion 54 in the pulling step S4 has been shown, but the wire 50 may be cut at the third bent portion 56 instead of the first bent portion 54. The reason is as follows: when the FAB 57 is bonded to the electrode 14 in step S12, the size of the metal crystal of the FAB 57 changes, so the size of the metal crystal of the FAB 57 may differ from the size of the metal crystal of the tip region 51. In that case, the mechanical strength of the boundary region (the region where the size of the metal crystal changes) between the FAB 57 and the tip region 51 of the wire 50 tends to be smaller than the mechanical strength of the FAB 57 or the tip region 51. Therefore, when the wire 50 is pulled in the pulling step S4, the wire 50 may be more likely to be cut at the third bent portion 56 than at the first bent portion 54. In such a case, a new FAB may be formed at a new tip of the wire 50 cut at the third bent portion 56. As a result, the third bent portion 56 remaining at the tip of the wire 50 is removed. Next, the new FAB may be pressed against the electrode 14 again to form a new bonding portion. This makes the wire 50 more likely to be cut at the first bent portion 54 when the wire 50 is pulled. If the wire 50 is relatively likely to be cut at the third bent portion 56, the FAB 57 may be pressed against a dummy region in step S12. The new FAB formed after the third bent portion 56 is removed from the wire 50 may be pressed against the electrode 14.

[0045] In the embodiment, an example has been shown in which the dummy region 11b is a region of the front surface 11a of the semiconductor chip 11 separated from the electrode 14, but the dummy region 11b may be a new electrode (second electrode) 14 to be bonded next time. The dummy region 11b may be a predetermined region of a member (e.g., a dummy stage) separated from the semiconductor device 1. [Explanation of symbols]

[0046] 1...semiconductor device, 10...wire bonding device, 11...semiconductor chip, 11a...surface, 11b...dummy region, 14...electrode, 30...bonding unit, 40...control unit, 50...wire, 51...tip region, 52...middle region, 53...base region, 54...first bent portion, 55...second bent portion.

Claims

1. a first joining step of joining a wire to a first electrode using a capillary; a payout process in which a tip region of the wire joined to the first electrode and an intermediate region of the wire located on the opposite side of the first electrode from the tip region are drawn out from the capillary by an operation of moving the capillary away from the first electrode while the wire is in a payout state; a bending process in which, by repeating an operation of bringing the capillary close to the first electrode and an operation of moving the capillary away from the first electrode while holding the wire, a first bent portion of the wire located between the tip region and the intermediate region, and a second bent portion of the wire located between a base region located on the opposite side of the intermediate region from the tip region with respect to the intermediate region, are repeatedly bent; a pulling step of pulling the wire so that the wire is cut at the first bent portion by an operation of moving the capillary away from the first electrode while holding the wire, thereby forming a pin wire joined to the first electrode; a removing step of removing the intermediate region and the second bent portion from the wire by joining the intermediate region to a dummy region using the capillary; a second bonding step of bonding the base end region to a second electrode using the capillary.

2. the first joining step includes a step of melting a tip of the tip region and a step of joining the tip of the tip region to the first electrode, 2. The method for manufacturing a semiconductor device according to claim 1, wherein the removal step includes the steps of melting a tip of the intermediate region, joining the tip of the intermediate region to the dummy region, pulling the wire so that the wire is cut at the second bend portion, and melting a tip of the base region.

3. 3. The method for manufacturing a semiconductor device according to claim 2, wherein the dummy region is a region of a surface of the semiconductor chip including the first electrode, the region being distant from the first electrode.

4. a bonding unit including a capillary configured to be able to supply a wire; A control unit for controlling an operation of the bonding unit, The control unit a first signal to bond the wire to a first electrode using the capillary; a second signal for causing a tip region of the wire joined to the first electrode and an intermediate region of the wire located on the opposite side of the first electrode from the tip region to be led out from the capillary by an operation of moving the capillary away from the first electrode while the wire is in a state in which the wire can be paid out; a third signal for repeatedly bending a first bent portion of the wire between the tip region and the intermediate region and a second bent portion of the wire between a base region located on the opposite side of the intermediate region from the tip region, by repeating an operation of moving the capillary toward the first electrode and an operation of moving the capillary away from the first electrode while holding the wire; a fourth signal for pulling the wire so that the wire breaks at the first bend by moving the capillary away from the first electrode while holding the wire, thereby forming a pin wire joined to the first electrode; and a fifth signal for removing the intermediate region and the second bend from the wire by joining the intermediate region to a dummy region using the capillary; a sixth signal for bonding the tip of the base end region to a second electrode using the capillary, and

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