System for monitoring performance of an electrostatic chuck in a substrate processing system - Patents.com

Abstract

A system for monitoring the health of a pedestal of a process chamber includes a memory storing instructions and a processor configured to execute the instructions for sensing one or more currents through one or more electrodes disposed on the pedestal, generating one or more reference values ​​based on the one or more currents, and determining the health of the pedestal based on the one or more reference values.

Description

[Technical field]

[0001] [CROSS REFERENCE TO RELATED APPLICATIONS] This application claims the benefit of U.S. Provisional Application No. 63 / 279,003, filed November 12, 2021. The entire disclosure of the above application is incorporated herein by reference.

[0002] The present disclosure relates generally to substrate processing systems, and more particularly to a system for monitoring the performance of an electrostatic chuck in a substrate processing system. [Background technology]

[0003] The Background Art provided herein is intended to present the contents of the present disclosure generally, and the inventions of the presently named inventors are not admitted expressly or impliedly as prior art to the present disclosure to the extent that they are described in this Background Art section and in a manner that is not prior art at the time of filing.

[0004] A semiconductor processing system (also called a tool) includes a processing chamber (also called a station or processing module). In the processing chamber, a semiconductor substrate (also called a wafer) is placed on a pedestal (e.g., an electrostatic chuck or ESC). The ESC includes multiple clamping electrodes to clamp the substrate to the ESC during processing. One or more process gases are supplied to the processing chamber from a showerhead. A plasma is generated between the showerhead and the ESC to deposit material on or remove (etch) material from the substrate. Summary of the Invention

[0005] A system for monitoring the health of a pedestal of a process chamber includes a memory for storing instructions and a processor configured to execute the instructions for sensing one or more currents through one or more electrodes disposed on the pedestal, generating one or more reference values ​​based on the one or more currents, and determining the health of the pedestal based on the one or more reference values.

[0006] In a further feature, the electrode includes a clamping electrode that clamps the substrate to the pedestal during substrate processing in the processing chamber.

[0007] In a further feature, the processor is configured to detect degradation of the pedestal due to at least one of a chemical environment, an electrical environment, and a thermal environment within the processing chamber based on one or more criteria.

[0008] In a further feature, the processor is configured to predict a problem with the pedestal based on the one or more criteria.

[0009] In a further feature, the processor is configured to predict a likelihood of defects in a substrate being processed on the pedestal based on the one or more criteria.

[0010] In a further feature, the processor is configured to detect a problem with clamping the substrate to the pedestal based on one or more criteria.

[0011] In a further feature, the processor is configured to predict a likelihood of arcing occurring in the processing chamber when the substrate is processed on the pedestal based on the one or more criteria.

[0012] In a further feature, the processor is configured to detect an imbalance in the current based on one or more reference values, the imbalance being indicative of degradation of the pedestal due to at least one of a chemical environment, an electrical environment, and a thermal environment within the processing chamber.

[0013] In a further feature, the processor is configured to sense current during one or more processing steps performed on a substrate disposed on the pedestal.

[0014] In a further feature, the processor is configured to sense current during at least one of the following operations performed on a substrate disposed on the pedestal: clamping the substrate to the pedestal, holding the clamped substrate on the pedestal, supplying a process gas to the processing chamber, and processing the substrate by generating a plasma in the processing chamber using the process gas.

[0015] In a further feature, the processor is configured to generate one or more reference values ​​based on average values ​​of the currents and / or difference values ​​between the currents.

[0016] In a further feature, the processor is configured to generate the one or more reference values ​​based on a statistical analysis of the current.

[0017] In a further feature, the processor is configured to determine a health of the pedestal by comparing the one or more reference values ​​to respective threshold values.

[0018] In a further feature, the processor is configured to determine respective threshold values ​​based on data received from the one or more process chambers.

[0019] In a further feature, the processor is configured to determine the health of the pedestal by comparing the one or more reference values ​​to respective predetermined ranges.

[0020] In a further feature, the processor is configured to determine the respective predetermined ranges based on data received from the one or more process chambers.

[0021] In a further feature, the two currents through the two electrodes flow in opposite directions, and at least one of the metrics detects an imbalance between the two currents, the imbalance being indicative of degradation of the pedestal due to at least one of a chemical environment, an electrical environment, and a thermal environment in the processing chamber.

[0022] In a further feature, the direction of current through the two electrodes is reversed between processing of each subsequent substrate.

[0023] In a further feature, at least one of the electrodes is exposed to a plasma during processing of a substrate on the pedestal, and one of the currents passing through the at least one of the electrodes includes a plasma component.

[0024] In a further feature, the processor is configured to determine a plasma component and offset the current through the two electrodes by the plasma component.

[0025] Further areas of applicability of the present disclosure will become apparent from the detailed description, the claims, and the drawings. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. [Brief description of the drawings]

[0026] The present disclosure will become better understood from the detailed description and the accompanying drawings.

[0027] [Figure 1] 1 is a schematic diagram of a processing chamber of a substrate processing system.

[0028] [Diagram 2] 2 is a graph of several currents sensed in an electrostatic chuck (ESC) of the processing chamber of FIG. 1;

[0029] [Figure 3A] The average value of the current sensed by the ESC to calculate a baseline that indicates the ESC health and can predict ESC failure. [Figure 3B] The average value of the current sensed by the ESC to calculate a baseline that indicates the ESC health and can predict ESC failure. [Figure 3C] The average value of the current sensed by the ESC to calculate a baseline that indicates the ESC health and can predict ESC failure. [Figure 3D]The average value of the current sensed by the ESC to calculate a baseline that indicates the ESC health and can predict ESC failure.

[0030] [Figure 4A] A differential value of the current sensed by the ESC to calculate an additional metric that indicates the health of the ESC and can predict ESC failure. [Figure 4B] A differential value of the current sensed by the ESC to calculate an additional metric that indicates the health of the ESC and can predict ESC failure. [Figure 4C] A differential value of the current sensed by the ESC to calculate an additional metric that indicates the health of the ESC and can predict ESC failure. [Figure 4D] A differential value of the current sensed by the ESC to calculate an additional metric that indicates the health of the ESC and can predict ESC failure.

[0031] [Figure 5A] The current through a supplementary power supply that is used in conjunction with the ESC to calculate an additional metric that indicates the health of the ESC and can predict ESC failure. [Figure 5B] The current through a supplementary power supply that is used in conjunction with the ESC to calculate an additional metric that indicates the health of the ESC and can predict ESC failure. [Figure 5C] The current through a supplementary power supply that is used in conjunction with the ESC to calculate an additional metric that indicates the health of the ESC and can predict ESC failure. [Figure 5D] The current through a supplementary power supply that is used in conjunction with the ESC to calculate an additional metric that indicates the health of the ESC and can predict ESC failure. [Figure 5E] The current through a supplementary power supply that is used in conjunction with the ESC to calculate an additional metric that indicates the health of the ESC and can predict ESC failure. [Figure 5F]The current through a supplementary power supply that is used in conjunction with the ESC to calculate an additional metric that indicates the health of the ESC and can predict ESC failure.

[0032] [Figure 6] A method for calculating thresholds and threshold ranges for reference values.

[0033] [Figure 7] A method for determining the health of an ESC and predicting failure of an ESC based on the reference values ​​and respective thresholds and threshold ranges.

[0034] In the drawings, reference numbers may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0035] Electrostatic chucks (ESCs) are exposed to harsh operating conditions within a processing chamber (also called a station). For example, ESCs are exposed to various processing chemicals, high voltages (e.g., on the order of hundreds of volts), and high temperatures (e.g., on the order of hundreds of degrees Fahrenheit). Over time, exposure to such harsh chemical, electrical, and thermal conditions tends to degrade and damage the ESC. For example, the clamping ability of the ESC decreases. Due to arcing that occurs during some substrate processing, the current through the clamping electrodes, which is normally balanced, tends to increase and become unbalanced. These issues cause defects in the substrate. Currently, there is no ESC current that can directly predict which substrates are more prone to arcing or which substrates can exhibit a damaged ESC. As such, these issues tend to persist and the ESC cannot be actively monitored and repaired to avoid these issues.

[0036] The present disclosure provides a system that solves the above problems by using multiple metrics derived from the ESC currents. The metrics detect current imbalances in the ESC and help indicate the health and degradation of the ESC. The metrics provide predictions regarding the likelihood of ESC failure. Additionally, the metrics can predict possible defects in a board and also identify which boards are prone to arcing. These predictions can aid in manufacturing and repair planning. These and other features of the presently disclosed system are described in more detail below.

[0037] 1 shows a schematic diagram of a process chamber (station) 200 of a semiconductor processing system (tool). The station 200 comprises an electrostatic chuck ESC 202 on which a substrate 212 is placed during processing. The ESC 202 comprises at least two clamping electrodes E1 220 and E2 222, also referred to as bipolar electrodes. Some ESCs comprise a third clamping electrode, referred to as the outer electrode (OE) 224. The OE 224 is annular and surrounds the electrodes 220 and 222. The electrodes 220, 222, and 224 are referred to as a tripolar electrode.

[0038] The station 200 includes a showerhead 206 that supplies one or more process gases. Radio frequency (RF) power (not shown) is applied to the showerhead 206 and the ESC 202 to generate a plasma 214 between the showerhead 206 and the ESC 202 to deposit material onto or remove material from the substrate 212.

[0039] The ESC 202 includes two power supplies 230 and 232 that provide power to the electrodes 220 and 222, respectively. A supplemental power supply (CPS) 204 provides an offset to the power supplies 230 and 232 based on the plasma voltage (described below). The OE 224 is connected to a node 236 between the CPS 204 and the power supplies 230 and 232. That is, the OE 224 is connected to the output of the CPS 204 and also to the inputs of the power supplies 230 and 232.

[0040] Power supplies 230 and 232 supply voltages 240 and 242 to electrodes 220 and 222, respectively. Voltages 240 and 242 have opposite polarities. Thus, currents 244 and 246 flow in opposite directions through electrodes 220 and 222. Current 248 flows through OE 224 and CPS 204 and is referred to as CPS current 248. The outer diameter (OD) of OE 224 is larger than the OD of substrate 212. Thus, the outer portion of OE 224 is exposed to plasma 214, and CPS current 248 includes a plasma component.

[0041] The controller 210 controls the power supplies 230, 232, and 204. The controller 210 controls the power supplies 230 and 232 independently of each other. Plasma voltage values ​​are experimentally measured, defined for the process, and stored in the controller. The CPS 204 provides offsets to the power supplies 230 and 232 based on the plasma voltage values. The controller 210 switches the polarity of the voltages 240 and 242 provided to the electrodes 220 and 222 after processing of each substrate. Correspondingly, the directions of the currents 244 and 246 are also reversed after processing of each substrate.

[0042] Over time, the harsh chemical (various process chemicals), electrical (high voltages and currents), and thermal (high temperatures) environments in the station tend to wear out the ESCs 202. For example, arcing occurs during some substrate processing. Arcing affects currents 244, 246, and 248 (collectively referred to as ESC currents), reducing the clamping ability of the ESCs 202. Normally, the currents 244 and 246 at equilibrium tend to increase and become unbalanced, which tends to cause non-uniformity on the substrates. At the current state of the art, no current can directly predict which substrates have a greater tendency to arc, or indicate a damaged ESC.

[0043] The present disclosure provides a system that provides a reference value derived from the ESC current. The reference value detects current imbalance and indicates the health status of the ESC 202 (e.g., whether the ESC 202 is operating normally or degraded). The threshold value and / or threshold range of the reference value are empirically determined based on data collected from several tool stations. In use, the reference value is calculated (e.g., by the controller 210) from the ESC current sensed at the station 200. The calculated reference value is compared to a respective threshold or threshold range. The health of the ESC 202 is determined based on the comparison. A prediction regarding the degradation level of the ESC 202 and an estimate of the remaining useful life of the ESC 202 are also provided based on the comparison. The prediction is useful for planning production and repairs, as described below. The reference value can also predict which boards are prone to arcing.

[0044] 2 shows an example of process steps typically performed on a substrate 212. The process steps described below are performed consecutively in the order described. In clamping step C, a voltage V1 is applied to the clamping electrode. In holding step H, the voltage applied to the clamping electrode is reduced from V2 to V1 to hold the substrate 212 clamped to the ESC 202. In step P, one or more process gases are provided through the showerhead 206. In step D, a plasma is generated by applying RF power to the showerhead 206 and the ESC 202, and material is deposited on or removed from the substrate 212. Step D is typically of longer duration than steps C, H, and P.

[0045] 2, the difference between currents 244 and 246 during steps C, H, P, and D is shown at 250. The average of currents 244 and 246 during steps C, H, P, and D is shown at 252. The CPS current 248 during steps C, H, P, and D is shown at 254.

[0046] 3A-6F, various reference values ​​are defined to indicate the health of the ESC 202 and to predict degradation and failure of the ESC 202. First, the definition of the reference values ​​is described. Then, the calculation of thresholds of the reference values ​​and the use of the reference values ​​to indicate the health of the ESC 202 and to predict degradation and failure of the ESC 202 are described.

[0047] Some of Figures 3A-6F show omitted and simplified curves of the curves shown in Figure 2. In Figures 3A-6F and their descriptions, the names of steps C, H, P, and D are retained. In some instances, the terms Clamp, Hold, and Dep are specified to indicate steps C, H, and D, respectively, and the term Sup is used in place of P to indicate the process gas supply step. Additionally, in the formulas for determining the reference values, the symbols A, B, and CPS are used to indicate the currents 244, 246, and 248, respectively. The symbols ave and diff are used to indicate the average and difference values, respectively.

[0048] 3A-3D, the curves in the figures are similar to the curve indicated at 252 in FIG. 2. The curves show the average values ​​of the ESC currents 244 and 246 during steps C, H, P, and D. The reference value M1 is defined as follows:

[0049] Referring to FIG. 3A, the reference value M1=(mean value (I ABave [Dep])-Average (I ABave [Hold])) / Average(I ABave [Hold]) and I ABave [Dep] is the average value of the currents 244 and 246 during step D (260 in the figure), and I ABave [Hold] is the average value of currents 244 and 246 during step H (262 in the figure). The reference value M1 represents the plasma 214 induced change in currents 244 and 246.

[0050] The criterion M1 can also be formulated in another way as follows.

[0051] M1=(Max(IABave [Dep])-Average (I ABave [Hold])) / Average(I ABave [Hold]). Maximum value (I ABave [Dep]) is the average maximum value of currents 244 and 246 during step D (264 in the figure), and I ABave [Hold] is the average value of currents 244 and 246 during step H (262 in the figure).

[0052] Alternatively, M1 = Mean (I ABave [Dep])-Average (I ABave [Hold]), as those terms are defined above.

[0053] As a further option, M1 = Max(I ABave [Dep])-Average (I ABave [Hold]), as those terms are defined above.

[0054] Referring to FIG. 3B, the reference value M2 is defined as follows:

[0055] M2 = (Maximum (I ABave [Sup])-Average (I ABave [Hold])) / Average(I ABave [Hold]). Maximum value (I ABave [Sup]) is the maximum average value of currents 244 and 246 during step P (266 in the figure), and I ABave [Hold] is the average value of the currents 244 and 246 during step H (262 in the figure). The reference value M2 indicates the relative maximum value of the ESC currents 244 and 246 in step P.

[0056] The criterion M2 can also be formulated in another way as follows:

[0057] M2 = Max(I ABave [Sup])-Average (I ABave [Hold]). Terms are defined above.

[0058] Referring to FIG. 3C, the reference value M3 is defined as follows:

[0059] M3 = Mean (I ABave [Clamp]) or average value (I ABave [Hold]) or average value (I ABave [Dep]), which are the average values ​​of currents 244 and 246 during steps C, H, and D, respectively (268, 262, and 260 in the figure, respectively).

[0060] 3D, a first curve 272 shows the average values ​​of the currents 244 and 246 during a first substrate processing. A second curve 274 shows the average values ​​of the currents 244 and 246 during a subsequent second substrate processing. As explained above with reference to FIG. 1, the ESC currents 244 and 246 are reversed during the second substrate processing relative to the processing of the first substrate.

[0061] At 276, an average value (I ABave The change in the mean (I ABave If [Dep]) decreases (downward) as shown in the figure, the average value (I ABave [Dep]) is negative, indicating that the ESC202 is working normally (or healthy). ABave [Dep]) increases (for example, changes upwards instead of downwards) ABave [Dep]) is positive, indicating that the ESC202 is degraded. Accordingly, another criterion that indicates the health of the ESC202 and can predict the degradation and failure of the ESC202 is the average value (I ABave [Dep])

[0062] Referring to Figures 4A-4D, the curves in the figures are similar to the curve indicated at 250 in Figure 2. The curves show the difference values ​​in the ESC currents 244 and 246 during steps C, H, P, and D. Figure 4A shows the difference values ​​in the absolute values ​​of the currents 244 and 246 (excluding opposite polarities) (A+B in the figures). Figure 4B shows the difference values ​​in the actual values ​​of the currents 244 and 246 (including opposite polarities) (AB in the figures).

[0063] Referring to FIG. 4A, the reference value M4 is defined as follows:

[0064] M4 = Mean (I ABdiff [Clamp]) or average value (I ABdiff [Hold]) or average value (I ABdiff [Dep]) which is the average value of the difference in absolute value of currents 244 and 246 during steps C, H, and D, respectively (280, 282, and 284 in the figure, respectively). Reference value M4 provides the difference in ESC currents during steps C, H, and D.

[0065] Alternatively, and with reference to FIGS. 4A and 4B, the criterion value M4 can be formulated as follows:

[0066] M4 = Mean (I ABdiff [Dep]) / Average Value(I ABave [Dep]). All terms are defined above.

[0067] Referring to FIG. 4C, the reference value M4 can also be defined as follows:

[0068] M4 = Max(I ABdiff [Dep], the first T time units)-average value (I ABdiff [Hold]). Maximum value (I ABdiff [Dep], the first T time units) is the I in the first T time units (e.g., 10 seconds) from the start of step D ABdiff [Dep] is the maximum value (286 in the figure), and I ABdiff[Hold] is the average value (282 in the figure) of the difference in absolute value of currents 244 and 246 during step H. This reference value represents the relative maximum value of the difference in ESC currents in the first T time units of step D.

[0069] Referring to FIG. 4D, the reference value M4 can also be defined as follows:

[0070] M4 = Mean (I ABdiff [Dep], the last T time units)-average value (I ABdiff [Hold]). Average value (I ABdiff [Dep], the last T time units) is the I in the last T time units (e.g., 10 seconds) before the end of process D ABdiff [Dep] is the average value (288 in the figure), and I ABdiff [Hold] is the average value (282 in the figure) of the difference in the absolute values ​​of currents 244 and 246 during step H. This reference value represents the relative average value of the difference in the ESC currents in the last T time units of step D.

[0071] 5A-5F, the curves in the figures are similar to the curve designated 254 in FIG.

[0072] Referring to FIG. 5A, the reference value M5 can be defined as follows:

[0073] M5=Max(I CPS [Dep]), which is the maximum value of the CPS current 248 in step D (290 in the figure).

[0074] 5B to 5D, the reference value M5 can also be defined as follows.

[0075] Referring to FIG. 5B, M5=Max(I CPS [Dep], the first T time units)-average value (I CPS [Hold]). Maximum value (I CPS[Dep], the first T time units) is the maximum value of the CPS current 248 in the first T time units (e.g., 10 seconds) from the start of step D (292 in the figure), and the average value (I CPS [Hold] is the average value of the CPS current 248 during step H (294 in the figure). This reference value indicates the relative maximum value of the CPS current 248 in the first T time units of step D.

[0076] Referring to FIG. 5C, M5=mean value(I CPS [Dep], the last T time units)-average value (I CPS [Hold]). The average value (I CPS [Dep], the last T time units) is the I in the last T time units (e.g., 10 seconds) before the end of process D CPS [Dep] is the average value (296 in the figure), and the average value (I CPS [Hold]) is defined above. This metric represents the relative average value of the CPS current 248 over the last T time units of step D.

[0077] Referring to FIG. 5D, M5=Max(I CPS [Dep], the first T1 time unit)-average value (I CPS [Dep], the last T2 time unit). When T1>T2, the maximum value (ICPS[Dep], the first T1 time unit) is the maximum value of the CPS current 248 in the first T1 time unit (e.g., 90 seconds) from the start of step D (293 in the figure), and the average value (I CPS [Dep], the last T2 time unit) is the I in the last T2 time unit (e.g., 10 seconds) before the end of process D CPS [Dep] is the average value (296 in the figure). This reference value indicates the difference between the maximum value (293 in the figure) of the CPS current 248 in the first T1 time unit (e.g., 90 seconds) from the start of step D and the average value (296 in the figure) of the CPS current 248 in the last T2 time unit (e.g., 10 seconds) before the end of step D.

[0078] 5E and 5F, the reference value M5 can be defined in the following further manner.

[0079] Referring to FIG. 5E, M5=mean value(I CPS [Clamp]) or average value (I CPS [Hold]) or average value (I CPS [Dep]) and are the average values ​​of the CPS current 248 during steps C, H, and D (298, 300, and 302 in the figure, respectively). These reference values ​​M5 indicate the current between the OE 224 and the substrate 212 during steps C, H, and D.

[0080] 5F, a first curve 304 shows the CPS current 248 during a first substrate processing. A second curve 306 shows the CPS current 248 during a subsequent second substrate processing. During the second substrate processing, the ESC currents 244 and 246 are reversed relative to the first substrate processing as described above with reference to FIG. 1. At 308, a maximum (I CPS [Dep]) is shown. Accordingly, the maximum I CPS The difference or division of (max(I CPS Another reference value can be defined as the ESC 202 health status [Dep]) that indicates the health of the ESC 202 and can predict degradation and failure of the ESC 202.

[0081] The thresholds and / or threshold ranges of all the above reference values ​​are empirically calculated based on data collected from several tools. The thresholds and / or threshold ranges are stored in the controller 210. The reference values ​​and their respective thresholds and / or threshold ranges are process specific. In use, the controller 210 senses the currents 244, 246, and 248 and calculates any of the above reference values. The controller 210 compares the reference values ​​with the respective thresholds and / or threshold ranges. Based on the comparison, the controller 210 determines the health of the ESC 202 and predicts the degradation level and likelihood of failure (e.g., estimated remaining useful life) of the ESC 202. The reference values ​​can also predict the likelihood of arcing. For example, the reference values ​​can predict which substrates are prone to arcing. The reference values ​​can also predict the likelihood of defects in substrates processed using the USC 202.

[0082] It should be noted that not all of the criteria values ​​need to be used. Due to the averages, difference values, and statistical parameters used to formulate the various criteria values ​​above, some of the criteria values ​​may overlap. Furthermore, some criteria values ​​may be more reliable than others in indicating the health of an ESC and predicting its failure. Thus, only selected criteria values ​​(e.g., those that are more reliable than others) may be used to determine the health and possible failure of an ESC. Furthermore, one set of criteria values ​​may be used for some ESCs and another set of criteria values ​​may be used for other ESCs. The criteria values ​​may be selected and used in other ways.

[0083] In some embodiments, the thresholds may be adjusted or changed in stages. The following description of thresholds in this paragraph also applies to threshold ranges. For example, the thresholds of some criteria values ​​may have three sequentially increasing values. When the criteria value exceeds a first (minimum) threshold, a simple warning is issued. When the criteria value exceeds a second threshold, which is greater than the first threshold, a warning that is more serious than the simple warning is issued. In response to the more serious warning, production and repairs can be planned. For example, some products (substrates to be processed) can be transferred to another station or tool with a healthy ESC, and repairs can be planned for the problematic ESC. When the criteria value exceeds a third (maximum) threshold, which is greater than the second threshold, the most serious warning is issued. In response to the most serious warning, all products are transferred to another station or tool with a healthy ESC, and the problematic ESC is repaired. In an embodiment using one threshold, if the metric exceeds the threshold, a warning may be issued and the product may be transported to another station or tool with a healthy ESC and the problematic ESC may be repaired.

[0084] 6 illustrates a method 400 for calculating thresholds and threshold ranges for a reference value. At 402, the method 400 collects ESC current measurements from several tools with known healthy ESCs. At 404, the method 400 collects ESC current measurements from several tools with known ESC problems. At 406, the method 400 calculates reference values ​​for both the healthy and problematic ESCs. At 408, the method 400 determines thresholds and threshold ranges for the reference value by comparing the calculated reference values ​​for both the healthy and problematic ESCs. At 410, the method 400 stores the thresholds and threshold ranges for the reference value and the method 400 ends.

[0085] 7 illustrates a method 450 for determining the health of an ESC and predicting problems with an ESC. Method 450 senses 452 the ESC current in a station. Method 450 calculates 454 one or more metrics based on the sensed current. Method 450 compares 456 the one or more metrics to respective thresholds or threshold ranges. Based on the comparison, method 450 determines 458 the health of the ESC and predicts the likelihood of the ESC failing, the likelihood of arcing occurring, the likelihood of defects occurring in the board, and which boards are susceptible to arcing, and method 450 ends.

[0086] The above system and method can be implemented in the controller 210, or can be implemented in the cloud and deployed as software as a service, or can be implemented using a combination of both the controller 210 and the server in the cloud. In a cloud-based embodiment, the controller 210 may only perform current sensing. The sensed current data can be transmitted to a server in the cloud via a distributed communication system, such as the Internet and / or other suitable networks. At the server, the reference values ​​are calculated and compared with respective thresholds and / or threshold ranges. Based on the comparison, the controller 210 can receive an indication of the health of the ESC and a prediction from the server via the distributed communication system. The indication and prediction can also be transmitted from the server or the controller 210 to other computing devices, including but not limited to the mobile device of the tool operator.

[0087] The above description is merely exemplary in nature and is not intended to limit the disclosure, its application, or use. The broad teachings of the disclosure can be implemented in various forms. Thus, while the disclosure includes specific examples, other variations will become apparent upon review of the drawings, specification, and claims below, so that the true scope of the disclosure is not so limited. It should be understood that one or more steps of the method may be performed in different orders (or simultaneously) without altering the principles of the disclosure. Furthermore, although each embodiment is described above as having certain features, one or more of those features described with respect to an embodiment of the disclosure can be implemented in other embodiments and / or in combination with features of other embodiments (even if the combination is not specified). In other words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with each other remain within the scope of the disclosure.

[0088] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) are described using various terms including "connected," "engaged," "coupled," "adjacent," "adjacent," "on," "above," "below," and "disposed." When a relationship between a first element and a second element is described in the above disclosure, unless specified as "direct," the relationship may be a direct relationship in which there are no other intervening elements between the first element and the second element, but at the same time, it may be an indirect relationship in which there are one or more intervening elements (spatial or functional) between the first element and the second element. As used herein, the phrase at least one of A, B, and C should be interpreted as meaning a logic using a non-exclusive logical OR (A OR B OR C), and not as meaning "at least one of A, at least one of B, and at least one of C."

[0089] In some embodiments, the controller is part of a system that may be part of the examples above. Such systems may include semiconductor processing equipment such as processing tools, chambers, processing platforms, and / or specific processing components (e.g., wafer pedestals, gas flow systems). These systems may be integrated with electronics for controlling pre-, during-, and post-processing operations of the semiconductor wafer or substrate. These electronics may be referred to as a "controller" that may control various components or subcomponents of the system.

[0090] The controller may be programmed to control any of the processes disclosed herein, including process gas supplies, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid supply settings, position motion settings, wafer loading and unloading from tools and other transport tools and / or load locks connected or coupled to a particular system, depending on the processing requirements and / or type of system.

[0091] In general, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in firmware format that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various personalizations (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. In some embodiments, the operational parameters may be part of a recipe defined by a process engineer to accomplish one or more processing steps in the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0092] In some embodiments, the controller may be part of or coupled to a computer that is integrated or coupled with the system, or otherwise networked or combined with the system. For example, the controller may be in the "cloud" that allows remote access of wafer processing, or may be all or part of a fab host computer system. The computer may allow remote access to the system to monitor the progress of a manufacturing operation, to review the history of past manufacturing operations, to review trends or performance metrics from multiple manufacturing operations, and to modify parameters of a current process or to set up processing steps following a current process, or to initiate a new process.

[0093] In some examples, a remote computer (e.g., a server) can provide the process recipe to the system over a network, which may include a local network or the Internet. The remote computer may include a user interface that allows for entry or programming of parameters and / or settings that are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool the controller is configured to connect to or control.

[0094] Thus, as discussed above, the controller may be distributed, for example, by having one or more separate controllers networked together and cooperating toward a common purpose, such as the process or control described herein. An example of a controller distributed for such purposes would be one or more integrated circuits on the chamber that are located remotely (e.g., at the platform level or as part of a remote computer) and that cooperate to control a process in the chamber.

[0095] Without being limited thereto, example systems may include plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and other semiconductor processing systems that may be related to or used in the fabrication and / or manufacturing of semiconductor wafers.

[0096] As described above, depending on the process steps being performed by the tool, the controller may be in communication with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools installed throughout the factory, a main computer, another controller, or tools used to transport materials to and from tool locations and / or load ports in a semiconductor manufacturing factory.

Claims

1. 1. A system for monitoring the health of a pedestal of a processing chamber, comprising: A memory for storing instructions; 1. A processor comprising: sensing one or more currents through one or more electrodes disposed on the pedestal; generating one or more reference values ​​based on the one or more currents; Determining the health of the base based on the one or more criteria. a processor configured to execute the instructions for: A system comprising:

2. 2. The system of claim 1, The electrode includes a clamping electrode that clamps the substrate to the pedestal during processing of the substrate in the processing chamber.

3. 2. The system of claim 1, The system, wherein the processor is configured to detect degradation of the pedestal due to at least one of a chemical environment, an electrical environment, and a thermal environment in the processing chamber based on the one or more reference values.

4. 2. The system of claim 1, The processor is configured to predict a problem with the pedestal based on the one or more metrics.

5. 2. The system of claim 1, The processor is configured to predict a likelihood of defects in a substrate processed on the pedestal based on the one or more criteria.

6. 2. The system of claim 1, The system, wherein the processor is configured to detect a problem with clamping the substrate to the pedestal based on the one or more metrics.

7. 2. The system of claim 1, The system, wherein the processor is configured to predict a likelihood of arcing occurring in the processing chamber when a substrate is processed on the pedestal based on the one or more criteria.

8. 2. The system of claim 1, The system, wherein the processor is configured to detect an imbalance in the current based on the one or more reference values, the imbalance indicating degradation of the pedestal due to at least one of a chemical environment, an electrical environment, and a thermal environment in the processing chamber.

9. 2. The system of claim 1, The system, wherein the processor is configured to sense the current during one or more processing steps performed on a substrate disposed on the pedestal.

10. 2. The system of claim 1, the processor is implemented on a substrate disposed on the pedestal; clamping the substrate to the pedestal; holding the clamped substrate on the pedestal; supplying a process gas to the processing chamber; and processing the substrate with the process gas by generating a plasma in the processing chamber; and configured to sense the current during at least one of:

11. 2. The system of claim 1, The processor is configured to generate the one or more reference values ​​based on at least one of an average value of the currents and a difference value between the currents.

12. 2. The system of claim 1, The processor is configured to generate the one or more reference values ​​based on a statistical analysis of the current.

13. 2. The system of claim 1, The system, wherein the processor is configured to determine the health of the pedestal by comparing the one or more criteria values ​​to respective thresholds.

14. 14. The system of claim 13, The processor is configured to determine the respective threshold values ​​based on data received from one or more process chambers.

15. 2. The system of claim 1, The system, wherein the processor is configured to determine the health of the pedestal by comparing the one or more criteria values ​​with respective predetermined ranges.

16. 16. The system of claim 15, The system, wherein the processor is configured to determine the respective predetermined ranges based on data received from one or more process chambers.

17. 2. The system of claim 1, The system, wherein two of the currents through two of the electrodes flow in opposite directions, and at least one of the reference values ​​detects an imbalance in the two currents, the imbalance indicating degradation of the pedestal due to at least one of a chemical environment, an electrical environment, and a thermal environment in the processing chamber.

18. 2. The system of claim 1, A system wherein the direction of the current through the two electrodes is reversed between processing of each subsequent substrate.

19. 2. The system of claim 1, The system, wherein at least one of the electrodes is exposed to a plasma during processing of a substrate on the pedestal, and one of the currents passing through the at least one of the electrodes includes a plasma component.

20. 20. The system of claim 19, The system, wherein the processor is configured to determine the plasma component and offset the current through two of the electrodes by the plasma component.

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