Remote Plasma Cleaning (RPC) Delivery Inlet Adapter

Abstract

The gas delivery apparatus includes an inlet portion and an outlet portion. The inlet portion can include a plurality of inlet ports configured to receive gas from a gas source. The inlet portion can also include a corresponding plurality of tapered surfaces associated with the plurality of inlet ports. Each tapered surface of the plurality of tapered surfaces surrounds a corresponding inlet port of the plurality of inlet ports. The outlet portion can be configured to deliver gas to a gas showerhead of the process chamber. Each tapered surface of the plurality of tapered surfaces can include a first region and a second region. The first region is associated with a first curvature. The second region is associated with a second curvature. The first curvature can be different from the second curvature.

Description

[Technical field]

[0001] Claiming priority This application claims the benefit of priority to U.S. Patent Application No. 63 / 290,893, filed December 17, 2021, which is incorporated by reference herein in its entirety.

[0002] The subject matter disclosed herein generally relates to systems, methods, apparatus, and machine-readable media associated with remote plasma cleaning (RPC) functionality for cleaning residual deposits from interior surfaces of a process chamber. [Background technology]

[0003] Semiconductor substrate processing equipment is used to process semiconductor substrates by techniques including etching, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), pulsed deposited layer (PDL), plasma enhanced pulsed deposited layer (PEPDL) processing, and resist removal.

[0004] During semiconductor substrate processing, the presence of chemical reactants in a process chamber leads to residual deposits on the interior surfaces of the chamber. For example, a process chamber may be covered with carbon residual deposits after an amorphous hard mask (AHM) process is performed on a substrate. According to conventional chamber cleaning techniques, a substantial portion of the cleaning gas introduced into the process chamber, such as a remote plasma source (RPS) activated cleaning gas radical species (e.g., atomic oxygen or fluorine), may react with chamber surfaces that do not have residual deposits. Reactions between the chamber walls and the cleaning gas, as well as incomplete etching of the residual deposits, introduce particle excursions in the process chamber that may extend to the cleaning gas delivery path, resulting in an increased amount of adders accumulating on the substrate during processing in the chamber. As used herein, the term "adders" refers to the difference in the number of defects (e.g., particles) before and after a test wafer passes through the process chamber.

[0005] The description of the background art provided herein generally presents the context of the present disclosure. It should be noted that the information described in this section is presented to provide those skilled in the art with some context for the following disclosed subject matter, and should not be considered admitted prior art. More specifically, the work of the currently named inventors within the scope described in this background art section, as well as aspects of the description that may not otherwise be considered prior art at the time of filing, are not expressly or implicitly admitted as prior art to the present disclosure. Summary of the Invention

[0006] A method, system, and computer program product are presented for RPC-related techniques that include removing residual deposits from a process chamber using a gas delivery device with a tapered surface.

[0007] In an exemplary embodiment, the gas delivery apparatus includes an inlet portion including a plurality of inlet ports configured to receive gas from a gas source. The inlet portion further includes a corresponding plurality of tapered surfaces associated with the plurality of inlet ports. Each tapered surface of the plurality of tapered surfaces surrounds a corresponding inlet port of the plurality of inlet ports. The gas delivery apparatus also includes an outlet portion. The outlet portion is configured to deliver gas to a gas showerhead of the process chamber.

[0008] In another exemplary embodiment, a method for removing residual deposits from a process chamber includes providing a gas delivery apparatus. The gas delivery apparatus includes an inlet portion and an outlet portion. The inlet portion includes a plurality of inlet ports. The inlet portion also includes a corresponding plurality of tapered surfaces associated with the plurality of inlet ports. Each tapered surface of the plurality of tapered surfaces surrounds a corresponding inlet port of the plurality of inlet ports. The method further includes coupling the outlet portion of the gas delivery apparatus to a showerhead of the process chamber. The method further includes coupling the inlet portion to a remote plasma source (RPS). The method further includes flowing a cleaning gas generated by the RPS through the plurality of inlet ports of the gas delivery apparatus and the showerhead into the process chamber. The method further includes removing residual deposits from the process chamber using the cleaning gas. In some aspects, the cleaning gas is flowed infrequently. Backflow of particles from the process chamber is also reduced by a constant flow of an inert gas through the body of the RPS, across the swept surface, and into the showerhead.

[0009] In yet another exemplary embodiment, the semiconductor substrate processing apparatus includes a remote plasma source (RPS) configured to generate a cleaning gas. The semiconductor substrate processing apparatus also includes a gas delivery apparatus coupled to the RPS. The gas delivery apparatus includes an inlet portion and an outlet portion. The inlet portion includes a plurality of inlet ports configured to receive gas from a gas source. The inlet portion also includes a corresponding plurality of tapered surfaces associated with the plurality of inlet ports. Each tapered surface of the plurality of tapered surfaces surrounds a corresponding inlet port of the plurality of inlet ports. The semiconductor substrate processing apparatus also includes a process chamber in which the semiconductor substrate is processed and in which a residue deposit is formed. The process chamber is fluidly coupled to the RPS via the inlet portion and the outlet portion. The semiconductor substrate processing apparatus also includes a controller module coupled to the RPS, the gas delivery apparatus, and the process chamber. The controller module causes the RPS to supply the cleaning gas into the process chamber via the inlet portion and the outlet portion.

[0010] The various accompanying drawings merely illustrate exemplary embodiments of the present disclosure and are not to be considered as limiting its scope. [Brief description of the drawings]

[0011] [Figure 1] FIG. 1 is a functional block diagram of an example substrate processing system in which examples of the present disclosure may be used.

[0012] [Diagram 2] FIG. 1 illustrates an inlet portion of a first gas delivery apparatus, such as an RPC tube, that may be used in connection with removing residual deposits from a process chamber.

[0013] [Diagram 3] FIG. 2 illustrates an inlet portion of a second gas delivery apparatus according to an exemplary embodiment.

[0014] [Figure 4]FIG. 4 illustrates a first cross-sectional view of the second gas delivery apparatus of FIG. 3 according to an exemplary embodiment.

[0015] [Diagram 5] FIG. 4 illustrates a second cross-sectional view of the second gas delivery apparatus of FIG. 3 according to an exemplary embodiment.

[0016] [Figure 6] FIG. 4 illustrates a top view of an inlet portion of the second gas delivery apparatus of FIG. 3 including multiple sloped regions according to an exemplary embodiment.

[0017] [Figure 7] FIG. 7 illustrates a top view of a first of the plurality of sloped regions of FIG. 6 in accordance with an exemplary embodiment.

[0018] [Figure 8] FIG. 8 illustrates a side view of an exemplary tool cutout for providing the first region of FIG. 7 according to an exemplary embodiment.

[0019] [Figure 9] FIG. 8 illustrates a top view of an exemplary tool cutout for providing the first region of FIG. 7 according to an exemplary embodiment.

[0020] [Figure 10] FIG. 13 illustrates a top view of multiple tool cutouts for providing adjacent first regions associated with a hyperbolic profile in accordance with an illustrative embodiment.

[0021] [Figure 11] FIG. 11 illustrates a cross-sectional view 1100 of adjacent tapered surfaces associated with a hyperbolic profile, according to an exemplary embodiment.

[0022] [Figure 12] FIG. 7 illustrates a top view of a second of the plurality of sloped regions of FIG. 6 in accordance with an exemplary embodiment.

[0023] [Figure 13] FIG. 13 illustrates a top view of a first cut that can be used to produce the second region of FIG. 12 according to an exemplary embodiment.

[0024] [Figure 14] FIG. 14 illustrates a cross-sectional view of the first cut of FIG. 13 in accordance with an exemplary embodiment.

[0025] [Figure 15] FIG. 13 illustrates a top view of a final cut that may be used to produce the second region of FIG. 12, according to an exemplary embodiment.

[0026] [Figure 16] FIG. 16 illustrates a cross-sectional view of the final cut of FIG. 15 in accordance with an exemplary embodiment.

[0027] [Figure 17] FIG. 4 illustrates a top view of an inlet portion of the second gas delivery apparatus of FIG. 3 including a blending region with a smooth profile between multiple sloped regions according to an exemplary embodiment.

[0028] [Figure 18] 1 is a flowchart of a method for removing residual deposits from a process chamber using a delivery inlet adapter with a profiled surface, according to an exemplary embodiment.

[0029] [Figure 19] 1 is a block diagram illustrating an example of a machine on which one or more exemplary method embodiments may be implemented or by which one or more exemplary embodiments may be controlled. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0030] The following description includes systems, methods, techniques, instruction sequences, and computing machine program products (e.g., stored on a machine-readable medium) that embody exemplary embodiments of the present disclosure. In the following description, for purposes of explanation, numerous specific details are outlined to provide a thorough understanding of exemplary embodiments directed to an intermittent stagnant flow of cleaning gas in a process chamber for removing residual deposits from surfaces of the process chamber. However, it will be apparent to one skilled in the art that the present embodiments may be practiced without these specific details.

[0031] In this application, the terms "semiconductor wafer," "wafer," "substrate," "semiconductor substrate," and "wafer substrate" are used interchangeably. The terms "chamber," "reaction chamber," "deposition chamber," "reactor," "chemical isolation chamber," "process chamber," "processing chamber," and "substrate processing chamber" are also used interchangeably.

[0032] One type of substrate processing equipment can include a process chamber including an upper electrode and a lower electrode, where radio frequency (RF) power is applied between the electrodes to excite a process gas into a plasma to process a semiconductor substrate in the process chamber. Another type of substrate processing equipment can include an ALD tool, which is a special type of CVD processing system in which an ALD reaction occurs between two or more chemical species introduced as process gases into a process chamber (e.g., an ALD process chamber). CVD processing systems can be configured to operate without plasma, and plasma-enhanced CVD (or PE-CVD) processing systems are configured to operate with plasma. Similarly, ALD processing systems can be configured to operate with or without plasma. Process gases (e.g., precursor gases) are used to form thin film deposits of materials (e.g., during multiple ALD cycles) on substrates, such as silicon wafers used in the semiconductor industry. The precursor gases can be continuously introduced from a gas source into the ALD processing chamber such that the gases react with the surface of the substrate to form a deposition layer upon combination. For example, the substrate is generally exposed to a process gas that includes a first chemical (or combination of chemicals) to form an adsorbed layer. Excess of the first chemical or chemicals may be removed by pumping or purging. The process gas may include at least a second chemical, or combination of chemicals. The at least second chemical may be introduced to react with the adsorbed layer to form a deposited material layer. The two chemicals, or combination of chemicals, may be specifically selected to react with each other to form a deposited material layer.

[0033] In some embodiments, the tube assembly can be used to deliver process gases into the process chamber through a showerhead. The tube assembly can also be used to deliver cleaning and purge gases for in-situ cleaning of the process chamber. As used herein, the terms "tube assembly" and "RPC tube" are used interchangeably. As used herein, the terms "RPC delivery inlet adapter", "delivery inlet adapter", "profiled end piece", and "gas delivery device" are used interchangeably. A more detailed description of a process chamber and a substrate processing apparatus with an RPC tube is provided in conjunction with FIG. 1. FIGS. 2-17 illustrate different configurations of the inlet portion of the delivery inlet adapter of the RPC tube. FIG. 18 is a flow chart of a method for removing residual deposits from a process chamber using a delivery inlet adapter with a profiled surface.

[0034] In some embodiments, the RPC tube delivery inlet adapter can include an inlet portion with a flat surface. The flat surface is at right angles to the clean gas flow path. An example of such an inlet portion is illustrated in FIG. 2. In the event of particle excursion from the chamber, particles may accumulate on this horizontal surface. Such accumulation may result in an unacceptable number of adders being present on the substrate after a deposition or cleaning process has been performed. The adders on the wafer may be arranged in a pattern that follows the orientation and spacing of the inlet ports of the RPC delivery inlet adapter. In this regard, the flat surface of the existing geometry may create a gravity-assisted stagnation zone, and thus particles that find their way above the top of the non-swept existing design may accumulate there. The disclosed technique uses a tapered surface design associated with a slope that is not favorable to gravity accumulation and is not a gas flow stagnation location (gas flow lines are much less likely to recirculate).

[0035] In some embodiments, the RPC tube delivery inlet adapter can include an inlet portion with a tapered surface around each inlet port. In this regard, the inlet portion does not include a flat surface to reduce the buildup of adders. In some aspects, the delivery inlet adapter can be configured based on eliminating continuous horizontal surfaces in the cleaning gas flow path. The delivery inlet adapter can also be configured based on using a constant height for the RPC tube inner diameter and maintaining a constant height for each inlet port diameter. In some aspects, the surfaces of the delivery inlet adapter can be configured to abut against one another and surface discontinuities can be smoothed and blended using a ball end mill type tool and / or hand finishing with an abrasive sheet (e.g., sandpaper).

[0036] The tapered surface of the delivery inlet adapter reduces the chance of particles accumulating on the surface. Because gas flows through the RPC tube, gas no longer stagnates on the surface of the delivery inlet adapter causing particle buildup. Instead, every part of the surface of the inlet portion of the delivery inlet adapter is sloped toward the inlet port so that gas flowing through the delivery inlet adapter can remove particles from this surface in a controlled manner. Removing particles from the sloped surface can reduce the number of adders on the wafer in the event of particle excursion from the delivery inlet adapter and onto the substrate in the process chamber.

[0037] The disclosed inlet portion of the delivery inlet adapter parameterizes the space around each inlet port. The inlet portion may be fabricated by removing material from a metal or ceramic rod based on a location from the center of the RPC tube, a location from the inlet port, and a distance from the RPC tube inner wall. In some embodiments, the inlet portion may be configured to include a first region and a second region associated with different slopes. The first region may be disposed between the inlet port and the center of the RPC tube. The surface of the first region may be fabricated from the metal or ceramic rod by removing material using a theoretical cone tool. The cone tool may be centered over the inlet port and associated with a constant slope, height, and diameter. Exemplary configurations of the first region are illustrated in FIGS. 7-11.

[0038] The second region may be disposed between the inlet port and the RPC tube inner diameter. The surface of the second region may be fabricated by removing material with an infinitesimally thin cylinder. At each step of removal, the cylinder changes its height, origin, and diameter to linearly interpolate between the RPC tube inner wall and the inlet port wall. This creates a smooth surface in the second region with a constant height at both the RPC tube inner diameter and the inlet port. Exemplary configurations of the second region are illustrated in Figures 12-16. The first and second regions may be blended using a ball end mill type tool to remove discontinuities between the surfaces. An exemplary blend between the regions is illustrated in Figure 17.

[0039] The disclosed technique involves removing horizontal surfaces on the inlet portion of the RPC delivery inlet adapter. Removal of the horizontal surfaces reduces the amount of RPC gas stagnation on the surface of the inlet portion, which minimizes the possibility of particle accumulation. Additionally, the resulting surface of the inlet portion can be machined using a computer numerically controlled (CNC) milling machine (e.g., a 5-axis CNC milling machine). For example, the inlet portion can be machined by mathematically quantifying the surface as a function of the angle, the RPC tube inner diameter, and the inlet port distance from the RPC tube center. This maximizes the manufacturability options of the delivery inlet adapter while minimizing the cost of new features. Similar surfaces can be created using blending features, but the parameterization of each region can provide a smooth, repeatable surface that is quantifiable.

[0040] FIG. 1 is a functional block diagram of an example of a substrate processing system 100 in which examples of the present disclosure may be used. Referring now to FIG. 1, an exemplary substrate processing system 100 is configured to perform deposition as shown. Although a PECVD substrate processing system is shown as system 100, a PEALD substrate processing system or other substrate processing systems (e.g., processing systems that do not use plasma for deposition or etching) may be used in conjunction with the cleaning techniques discussed herein. The substrate processing system 100 includes a process chamber 102 that surrounds other components of the substrate processing system 100 and contains a plasma. The process chamber 102 includes a gas distribution device 104 and a substrate support 106, such as an electrostatic chuck (ESC). During operation, a substrate 108 is disposed on the substrate support 106. In some embodiments, the substrate support may include one or more pedestals.

[0041] In some examples, the gas distribution device 104 may include a showerhead 109 that distributes process gases across the substrate 108 and acts as an electrode to apply an RF electric field that induces ion bombardment. The showerhead 109 may include a stem portion that includes one end that is connected to the top surface of the process chamber 102. The base portion is generally cylindrical and extends radially outward from an opposite end of the stem portion at a location that may be spaced apart from the top surface of the process chamber 102. The substrate-facing surface or faceplate of the base portion of the showerhead 109 includes a plurality of dispersion holes through which the process gas(es) flow. The gas distribution device 104 may be made of a metallic material and may act as an upper electrode. Alternatively, the gas distribution device 104 may be made of a non-metallic material and may include a recessed electrode. In other examples, the upper electrode may include a conductive plate and the process gas may be introduced in another manner.

[0042] The substrate support 106 includes an electrically conductive base plate 110 that acts as a lower electrode. The base plate 110 supports a heating plate 112, which may correspond to a ceramic multi-zone heating plate. A thermally resistive layer 114 may be disposed between the heating plate 112 and the base plate 110. The base plate 110 may include one or more coolant channels 116 for flowing coolant through the base plate 110.

[0043] A radio frequency (RF) generating system 120 generates and outputs an RF voltage to one of the upper electrode (e.g., the gas distribution device 104) and the lower electrode (e.g., the base plate 110 of the substrate support 106). The other of the upper and lower electrodes can be direct current (DC) grounded at a ground terminal 143, alternating current (AC) grounded, or floating. In some examples, the RF generating system 120 can supply dual frequency power and includes an HF generator 121 and an LF generator 122 that generate high frequency (HF) power and low frequency (LF) power (at predetermined frequencies and power levels, respectively) that are fed by a matching and distribution network 124 to the upper or lower electrode (or showerhead).

[0044] Chemical delivery system 130 (also referred to as a chemical delivery module) includes process gas sources (such as one or more precursor canisters) 132-1, 132-2, ..., and 132-N (collectively, process gas sources 132), where N is an integer greater than zero. The process gas sources are fluidly coupled (e.g., via multiple gas lines) to corresponding valves 134-1, 134-2, ..., and 134-N.

[0045] The process gas source 132 provides one or more process gas mixtures, dopants, carrier gases, liquid precursors, precursor gases, cleaning gases, and / or purge gases. In some examples, the chemical delivery system 130 delivers precursor gases, such as a mixture of tetraethyl orthosilicate (TEOS) gas, a gas containing oxygen species during deposition and argon (Ar) gas, and a dopant containing triethyl phosphate (TEPO) and / or triethyl borate (TEB). In some examples, diffusion of the dopant occurs from the gas phase. For example, a carrier gas (e.g., nitrogen, argon, or other) can be concentrated with a desired dopant (e.g., TEPO and / or TEB, also in gas form) and delivered to a silicon wafer, where the concentration is balanced. In a subsequent process, the wafer can be placed in a quartz tube heated to a specific temperature.

[0046] Returning to FIG. 1 , the process gas source 132 is connected to a mixing manifold 140 by valves 134-1, 134-2, ..., and 134-N (collectively, valves 134) and mass flow controllers (MFCs) 136-1, 136-2, ..., and 136-N (collectively, MFCs 136). The mixing manifold 140 is in fluid communication with the process chamber 102. In some applications, there may be one or more valves between the mixing manifold 140 and an inlet port 168. The process gases are supplied to and mixed in the mixing manifold 140. The output of the mixing manifold 140 is fed to the process chamber 102 via the process gas supply line 141 and the RPC tube 160. In some embodiments, the mixing manifold is heated to a predetermined temperature to supply precursor gases to the process chamber at a particular temperature (or temperature range).

[0047] The RPC tube 160 can include tubing 162, a reduction adapter 164, and a delivery inlet adapter 166. The delivery inlet adapter 166 includes an inlet portion 167 coupled to the reduction adapter 164. The delivery inlet adapter 166 also includes an outlet portion 169 coupled to the showerhead 109. In some embodiments, the output of the mixing manifold 140 is fed to the showerhead 109 via the supply line 141 and the inlet port 168. In some embodiments, the substrate processing system 100 includes a remote plasma source (RPS) 152 configured to generate plasma and radicals from the cleaning gas and the purge gas. In some aspects, the RPS 152 is supplied by the process gas source 132 or other process gas source. The cleaning gas and the purge gas can be supplied to the showerhead 109 to perform in situ cleaning of the processing chamber 102. More specifically, cleaning and purge gases are supplied to the showerhead 109 via supply lines 158, valves 154, MFCs 156, and RPC tubing 160. In some embodiments, valves 154 and / or MFCs 156 may not be present. In some aspects, the RPS 152 may be part of the chemical delivery system 130. A more detailed description of aspects of the delivery inlet adapter 166 is provided herein below in connection with Figures 2-18.

[0048] A temperature controller 142 may be connected to a number of thermal control elements (TCEs) 144 disposed in the heating plate 112. For example, the TCEs 144 may include, but are not limited to, a respective macro-TCE corresponding to each zone in a multi-zone heating plate, and / or an array of micro-TCEs disposed across multiple zones of a multi-zone heating plate. The temperature controller 142 may be used to control the number of TCEs 144 to control the temperature of the substrate support 106 and the substrate 108. Although FIG. 1 illustrates the TCEs on the substrate support structure, the disclosure is not limited in this respect, and TCEs may be configured in other areas of the chamber (e.g., the chamber walls). Such TCEs configured in the chamber walls may control the chamber wall temperature, which may inhibit and assist deposition using the chamber cleaning techniques discussed herein (e.g., by increasing the reactivity of cleaning gases reaching the wall surface).

[0049] The temperature controller 142 may be in communication with the coolant assembly 146 to control the flow of coolant through the channel 116. For example, the coolant assembly 146 may include a coolant pump and a reservoir. The temperature controller 142 operates the coolant assembly 146 to selectively flow coolant through the channel 116 to cool the substrate support 106. Valves 148 (e.g., gate valves) and pumps 150 (e.g., exhaust pumps) may be used to control pressure and to remove reactants from the processing chamber 102. In an exemplary embodiment, the process chamber may include two or more gate valves (or other types of valves) for removing reactants (e.g., process gases or cleaning gases) and purging gases from the chamber.

[0050] A system controller 159 may be used to control components of the substrate processing system 100. For example, the system controller 159 may be configured to control the supply of cleaning and purging gases via the delivery inlet adapter 166 for in-situ cleaning of the process chamber 102. The system controller 159 may be configured to perform other control functionality, such as dynamically monitoring and adjusting the surface temperature of the heating elements of the gas lines in the chemical delivery system 130. The system controller 159 may also be configured to perform pressure control functions, such as monitoring and adjusting the pressure in the process chamber 102. Although shown as a separate controller, the temperature controller 142 may be implemented within the system controller 159.

[0051] FIG. 2 illustrates an inlet portion of a first gas delivery apparatus, such as an RPC tube, that may be used in connection with removing residual deposits from a process chamber. With reference to FIG. 2, the inlet portion 200 may include inlet ports 202A, 202B, 202C, 202D, and 202E disposed on a flat surface 204. The flat surface 204, which may be oriented horizontally with respect to gravity, is perpendicular to the flow path of the cleaning gas that is supplied to the process chamber 102 through the delivery inlet adapter. In the event of particle excursion from the chamber, particles may accumulate on the horizontal surface 204. The accumulation of particles may lead to an unacceptable number of adders on a substrate being processed in the process chamber. The disclosed techniques may be used to configure a profiled end piece of the RPC tube with at least one sloping surface to prevent particle accumulation and reduce adders on the substrate.

[0052] 3 illustrates a top view of an inlet portion 300 of a second gas delivery apparatus (e.g., delivery inlet adapter 166) according to an exemplary embodiment. The inlet portion 300 can include a plurality of tapered surfaces 304A, 304B, 304C, 304D, 304E, and 304F. The plurality of tapered surfaces 304A, 304B, 304C, 304D, 304E, and 304F can be configured to surround a corresponding plurality of inlet ports 302A, 302B, 302C, 302D, 302E, and 302F. Corresponding cross-sectional views A and B of the inlet portion 300 are illustrated in FIGS. 4 and 5, respectively. Although an inlet portion 300 with six inlet ports 302A-302F is illustrated, the disclosure is not limited in this respect. More specifically, the inlet portion 300 may be configured with a different number of inlet ports and corresponding tapered surfaces.

[0053] 4 illustrates a first cross-sectional view 400 of the second gas delivery apparatus of FIG. 3 according to an exemplary embodiment. Referring to FIG. 4, the first cross-sectional view 400 illustrates a tapered surface 304F surrounding the inlet port 302F of the inlet portion 300 of the delivery inlet adapter 166.

[0054] 5 illustrates a second cross-sectional view 500 of the second gas delivery apparatus of FIG. 3, according to an exemplary embodiment. Referring to FIG. 5, the second cross-sectional view 500 illustrates the tapered surfaces 304B and 304D of the inlet portion 300 of the delivery inlet adapter 166.

[0055] FIG. 6 illustrates a top view 600 of the inlet portion 300 of the second gas delivery apparatus of FIG. 3 including multiple sloped regions, according to an exemplary embodiment. With reference to FIG. 6, the tapered surfaces 304A-304F are disposed about a central axis 610. Each of the tapered surfaces 304A-304F may be comprised of a first region and a second region. The first region may be associated with a first curvature, and the second region may be associated with a second curvature. The first curvature may be different from the second curvature. For example, the tapered surface 302A surrounding the inlet port 302A may comprise a first region 602 and a second region 604. Similarly, the tapered surface 304B surrounding the inlet port 302B may comprise a first region 606 and a second region 608.

[0056] In some embodiments, the first and second regions may be provided (or manufactured) using a CNC milling machine based on the disclosed configurations and features for the first and second regions. For example, a CNC milling machine may be used with different milling passes (or patterns) to create profiles associated with the first and second regions. Exemplary milling patterns for creating the first and second regions are discussed herein below.

[0057] 7 illustrates a top view 700 of a first region 602 of the multiple tapered regions of FIG. 6 , according to an example embodiment. In some embodiments, the first region 602 is created about a central axis 702 of the inlet port 302A using a CNC milling machine (e.g., possibly equipped with a ball end mill to facilitate cutting the tapered profile). For example, the first region 602 may be created by milling a pattern of concentric circles 704 centered about the central axis 702. In this regard, the first region 602 may be associated with a cutout equivalent to using a conical tool (e.g., conical tool 902 in FIG. 9 ) centered about the central axis 702.

[0058] 8 illustrates a side view 800 of an example tool cutout for providing first region 602, according to an example embodiment. With reference to FIG. 8, first region 602 may be created using a portion of a conical cutout 806, which is equivalent to using a conical tool (e.g., conical tool 902 in FIG. 9) centered on central axis 702. For example, first region 602 may be milled (e.g., from a steel rod or another type of material) such that a conical surface is achieved. The conical surface of first region 602 may be represented by a portion of conical cutout 806 defined by edges 802 and 804, as illustrated in FIG. 8.

[0059] 9 illustrates a perspective view 900 of a conical tool 902 and a top view 901 of a conical cutout 806 for providing the first region 602, according to an example embodiment. Although the first region 602 is conical in shape, the conical tool 902 (depicted in FIG. 9 ) may prevent milling of the second region 604 into its intended shape, as the conical tool 902 may cut through the entire cone. In such an embodiment, CNC machining may be used to facilitate fabrication, as a much smaller tool with the same conical angle may be rastered back and forth in the radial, circumferential, and vertical directions without compromising the second region 604.

[0060] 10 illustrates a top view 1000 of multiple tool notches for providing adjacent first regions associated with a hyperbolic profile, according to an example embodiment. With reference to FIG. 10, conical notches 1004 and 1006 may be used to mill first regions 602 and 606, respectively. The hyperbola of such a profile may be described as a curved edge in a plane of symmetry (e.g., along the edge of profile 1008). The hyperbola is an artifact of cutting adjacent conical surfaces, such as regions 602 and 606.

[0061] When conical notches are used to create (e.g., mill) the first region around the inlet port of inlet portion 300, the planar interference between the conical notches results in a hyperbolic profile between adjacent tapered surfaces. For example, Figure 10 illustrates a perspective view 1001 of a hyperbolic profile 1002 between tapered surfaces 304A and 304B with corresponding first regions 602 and 606. Figure 10 further illustrates a portion of a hyperbolic profile 1008 created between conical surfaces 304E and 304D.

[0062] 11 illustrates a cross-sectional view 1100 of adjacent tapered surfaces associated with hyperbolic profiles, according to an example embodiment. More specifically, cross-sectional view 1100 illustrates hyperbolic profiles 1002 and 1008 associated with milling first regions of tapered surfaces 304A, 304B, 304E, and 304D of FIG.

[0063] FIG. 12 illustrates a top view 1200 of a second region 604 of the multiple angled regions (e.g., tapered surfaces 304A-304E) of FIG. 6, according to an exemplary embodiment. With reference to FIG. 12, the second region 604 may be created using a CNC milling machine (e.g., a ball-end milling machine) making multiple arc-shaped cuts 1206 with differing outer diameters (OD). For example, the milling machine may create a first (shallowest) cut 1203 that follows an arc with an OD based on the radius 1202 of the RPC tube (e.g., radius 1202 is the distance between the central axis 610 and the inner circumference of the RPC tube 160) (e.g., the outermost tangent of the milling cutter may be at radius 1202, which is the inner cylindrical wall of the RPS tube). As the depth of the cut increases, the OD of the cut arc decreases and the central axis of the cut arc approaches the central axis of the corresponding inlet port. For example, the last (deepest) arcuate cut 1205 in the second region 604 is associated with an OD based on the radius 1204 of the inlet port 302A. Different views of the first and last cuts in the second region 604 are illustrated in Figures 13-16.

[0064] FIG. 13 illustrates a top view 1300 of a first cut 1203 that may be used to produce the second region 604, according to an example embodiment.

[0065] FIG. 14 illustrates a cross-sectional view 1400 of a first cut 1203 configured based on a radius 1202, according to an example embodiment.

[0066] FIG. 15 illustrates a top view 1500 of the final cut 1205 that may be used to produce the second region 604, according to an exemplary embodiment.

[0067] FIG. 16 illustrates a cross-sectional view 1600 of a final cut 1205 configured based on a radius 1204, in accordance with an example embodiment.

[0068] FIG. 17 illustrates a top view 1700 of the inlet portion 300 of the second gas delivery apparatus of FIG. 3 including a blending region with a smooth profile between multiple sloped regions, according to an exemplary embodiment. With reference to FIG. 17, the inlet portion 300 can be configured with exemplary blending regions, such as blending regions 1702, 1704, and 1706. In some aspects, a first blending region 1702 with a smooth profile can be configured around the opening of the inlet port. For example, a 1 / 16″ round can be added to the inlet port opening to create the blending region 1702. In some embodiments, the intersection of the blending region 1704 can be any non-zero radius blend when the part is cut with a rotary milling tool. In some aspects, the intersection of the blending region 1706 can have a sharper edge profile than the region 1704.

[0069] In some aspects, the second blending region 1704 may be configured between one or more edges separating the first and second regions of the tapered surfaces. The third blending region 1706 may be configured between adjacent tapered surfaces. In some embodiments, the blending regions 1704 and 1706 may be created by adding 1 / 8" rounding to corresponding edges between the first and second regions and between adjacent tapered surfaces. In some embodiments, different degrees of rounding may be used for the blending regions 1702, 1704, and 1706.

[0070] 1-17, the gas delivery apparatus (e.g., delivery inlet adapter 166) can include an inlet portion 300 (also referred to as inlet portion 167) and an outlet portion 169. The inlet portion 300 can include a plurality of inlet ports 302A-302F configured to receive gas from a gas source (e.g., RPS 152). The inlet portion 300 can also include a corresponding plurality of tapered surfaces 304A-304F associated with the plurality of inlet ports. Each tapered surface of the plurality of tapered surfaces 304A-304F surrounds a corresponding inlet port of the plurality of inlet ports 302A-302F. The outlet portion 169 can be configured to deliver gas to a gas showerhead 109 of the process chamber 102.

[0071] In some embodiments, each tapered surface of the plurality of tapered surfaces 304A-304F comprises a first region and a second region. For example, tapered surface 304A comprises a first region 602 and a second region 604. The first region is associated with a first curvature and the second region is associated with a second curvature. The first curvature may differ from the second curvature. In some aspects, the first region (e.g., first region 602) may comprise a conical surface. The second region (e.g., second region 604) may comprise a non-conical surface. The conical surface may be associated with a constant slope and a constant height. In some aspects, the conical surface may comprise a conical notch (e.g., conical notch 806 associated with first region 602). The conical cutout may comprise multiple partial concentric circles having a common central axis (eg, concentric circle 704 about central axis 702 of inlet port 302A).

[0072] In some embodiments, the non-conical surface can comprise a non-conical cutout (e.g., a cutout in the second region 604 created based on the multiple arc cuts 1206). The non-conical cutout can comprise multiple arcs (e.g., multiple arc cuts 1206). The multiple arcs can be associated with corresponding multiple central axes that do not coincide with one another (e.g., the OD of each arc change discussed in connection with FIG. 12).

[0073] In some embodiments, each tapered surface of the plurality of tapered surfaces can further comprise a first intermixing region (e.g., intermixing region 1704) disposed between the first region and the second region. Additionally, each tapered surface of the plurality of tapered surfaces can further comprise a second intermixing region (e.g., intermixing region 1702) disposed about an inlet port of the tapered surface.

[0074] 18 is a flow chart of a method 1800 for removing residual deposits from a process chamber using a delivery inlet adapter with a profiled surface, according to an example embodiment. The method 1800 includes operations 1802, 1804, 1806, 1808, and 1810, which may be performed by control logic (or the control logic may configure or cause other modules to perform functions), such as the system controller 159 of FIG. 1. For example, the system controller 159 may be configured to manage the operation of the substrate processing system 100, including performing operations related to in situ cleaning to remove residual deposits from a process chamber.

[0075] In operation 1802, a gas delivery apparatus (e.g., delivery inlet adapter 166) may be provided. The gas delivery apparatus may include an inlet portion (e.g., inlet portion 167 or 300) and an outlet portion (e.g., outlet portion 169). The inlet portion may include a plurality of inlet ports (e.g., inlet ports 302A-302F). The inlet portion may also include a corresponding plurality of tapered surfaces (e.g., tapered surfaces 304A-304F) associated with the plurality of inlet ports. Each tapered surface of the plurality of tapered surfaces surrounds a corresponding inlet port of the plurality of inlet ports.

[0076] In operation 1804, an outlet portion (eg, outlet portion 169) of the gas delivery apparatus may be coupled to a showerhead (eg, showerhead 109) of the process chamber.

[0077] In operation 1806, the inlet portion (eg, the inlet portion 300) may be coupled to a remote plasma source (eg, the RPS 152).

[0078] In operation 1808, the cleaning gas generated by the RPS can be flowed into the process chamber through multiple inlet ports of the gas delivery apparatus and the showerhead. For example, the cleaning gas generated by the RPS 152 can be flowed into the process chamber 102 via the supply line 158, the valve 154, the MFC 156, the tubing 162, the reduction adapter 164, the delivery inlet adapter 166, and the showerhead 109.

[0079] In operation 1810, residual deposits may be removed from the process chamber using a cleaning gas.

[0080] FIG. 19 is a block diagram illustrating an example of a machine 1900 on which one or more exemplary method embodiments may be implemented or by which one or more exemplary embodiments may be controlled. In alternative embodiments, the machine 1900 may operate as a standalone device or may be connected (e.g., networked) to other machines. In a networked deployment, the machine 1900 may operate in the capacity of a server machine, a client machine, or both in a server-client network environment. In an example, the machine 1900 may act as a peer machine in a peer-to-peer (P2P) (or other distributed) network environment. Furthermore, although only a single machine 1900 is illustrated, the term "machine" should also be taken to include any collection of machines that individually or jointly execute a set (or sets) of instructions to perform any one or more of the methodologies discussed herein, such as via cloud computing, software as a service (SaaS), or other computer cluster configurations.

[0081] Examples may include or operate with logic, a few components, or mechanisms, as described herein. A circuit configuration is a collection of circuits implemented in a tangible entity that includes hardware (e.g., simple circuits, gates, logic). Circuit configuration membership may be flexible with respect to time and the variability of the underlying hardware. A circuit configuration includes members that, when operational, may perform specified operations, either alone or in combination. In examples, the hardware of a circuit configuration may be invariably designed (e.g., hardwired) to perform a particular operation. In examples, the hardware of a circuit configuration may include variably connected physical components (e.g., execution units, transistors, simple circuits) that include computer-readable media that are physically modified (e.g., magnetically, electrically, by movable arrangements of invariant mass particles) to encode instructions for a particular operation. In connecting the physical components, the underlying electrical properties of the hardware configuration are changed (e.g., from an insulator to a conductor, or vice versa). The instructions enable the embedded hardware (e.g., an execution unit or a loading mechanism) to create members of the circuitry in the hardware through variable connections to perform a portion of a particular operation when in operation. Thus, the computer-readable medium is communicatively coupled to other components of the circuitry when the device is in operation. In some aspects, any of the physical components may be used in more than one member of more than one circuitry. For example, during operation, an execution unit may be used in a first circuit of a first circuitry at one time and reused by a second circuit in the first circuitry or by a third circuit in the second circuitry at a different time.

[0082] The machine (e.g., computer system) 1900 may include a hardware processor 1902 (e.g., a central processing unit (CPU), a hardware processor core, a graphics processing unit (GPU), or any combination thereof), a main memory 1904, and a static memory 1906, some or all of which may communicate with each other via an interlink (e.g., a bus) 1908. The machine 1900 may further include a display device 1910, an alphanumeric input device 1912 (e.g., a keyboard), and a user interface (UI) navigation device 1914 (e.g., a mouse). In an example, the display device 1910, the alphanumeric input device 1912, and the UI navigation device 1914 may be touch screen displays. The machine 1900 may additionally include a mass storage device (e.g., a drive unit) 1916, a signal generating device 1918 (e.g., a speaker), a network interface device 1920, and one or more sensors 1921. The machine 1900 may include an output controller 1928, such as a serial connection (e.g., a universal serial bus (USB) connection), a parallel connection, or other wired or wireless connection (e.g., an infrared (IR) connection, a near field communication (NFC) connection) for communicating with or controlling one or more peripheral devices (e.g., a printer, a card reader).

[0083] In an exemplary embodiment, the hardware processor 1902 may implement the functionality of the system controller 159, or any control logic discussed above, for configuring and controlling the functionality described herein in connection with removing residual deposits from a process chamber or configuring a tapered surface of a delivery inlet adaptor of an RPC tube. In this regard, the hardware processor 1902 may be configured as a processor of a device (e.g., a milling machine or another apparatus) configured to create a component of an RPC tube (e.g., a delivery inlet adaptor) based on the disclosed techniques or configurations.

[0084] The mass storage device 1916 may include a machine-readable medium 1922 having stored thereon one or more sets of data structures or instructions 1924 (e.g., software) embodied or utilized by any one or more of the techniques or functions described herein. The instructions 1924 may reside, completely or at least partially, within the main memory 1904, within the static memory 1906, or within the hardware processor 1902 during execution of the instructions 1924 by the machine 1900. In an example, one or any combination of the hardware processor 1902, the main memory 1904, the static memory 1906, or the mass storage device 1916 may constitute a machine-readable medium.

[0085] Although the machine-readable medium 1922 is illustrated as a single medium, the term “machine-readable medium” may include a single medium or multiple media (e.g., a centralized or distributed database, and / or associated caches and servers) configured to store one or more instructions 1924.

[0086] The term "machine-readable medium" may include any medium capable of storing, encoding, or carrying instructions 1924 for execution by the machine 1900, causing the machine 1900 to perform any one or more of the techniques of this disclosure, or capable of storing, encoding, or carrying data structures used by or related to such instructions 1924. Non-limiting examples of machine-readable media may include solid-state memory and optical and magnetic media. In an example, a high-capacity machine-readable medium comprises a machine-readable medium 1922 in which a plurality of particles have an unchanging (e.g., stationary) mass. Thus, the high-capacity machine-readable medium is not a transitory propagating signal. Specific examples of high-capacity machine-readable media may include non-volatile memories such as semiconductor memory devices (e.g., electrically programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM)) and flash memory devices, magnetic disks such as internal hard disks and removable disks, magneto-optical disks, and CD-ROM and DVD-ROM disks.

[0087] Further, the instructions 1924 may be transmitted or received via the network interface device 1920 over a communications network 1926 using a transmission medium.

[0088] The implementation of the above techniques may be accomplished through any number of specifications, configurations, or exemplary deployments of hardware and software. It should be understood that the functional units or capabilities described herein may be referred to or labeled as components or modules to more particularly emphasize their implementation independence. Such components may be embodied by any number of software or hardware forms. For example, a component or module may be implemented as a hardware circuit comprising custom Very Large Scale Integration (VLSI) circuits or gate arrays, off-the-shelf semiconductors such as logic chips, transistors, or other discrete components. A component or module may be implemented in a programmable hardware device, such as a field programmable gate array, programmable array logic, programmable logic device, or the like. A component or module may be implemented in software for execution by various types of processors. For example, an identified component or module of executable code may comprise one or more physical or logical blocks of computer instructions, which may be organized as, for example, an object, procedure, or function. However, the executable files of an identified component or module need not be physically located together, but may comprise heterogeneous instructions stored in different locations which, when logically linked together, comprise the component or module and achieve the stated purpose of the component or module.

[0089] In fact, an executable code component or module may be a single instruction or many instructions, and may even be distributed across several different code segments, among different programs, and across several memory devices or processing systems. In particular, some aspects of the described processes (such as code rewriting and code analysis) may be performed on a processing system (e.g., in a computer at a data center) different from the processing system on which the code is deployed (e.g., in a computer embedded in a sensor or robot). Similarly, operational data may be identified and described in components or modules herein and may be embodied in any suitable form and organized in any suitable type of data structure. Operational data may be collected as a single data set or distributed across different locations, including across different storage devices, and may exist, at least in part, simply as electronic signals on a system or network. Components or modules may be passive or active, including agents operable to perform a desired function.

[0090] The described implementations of the subject matter can include one or more features, either alone or in combination, as illustrated below by way of example.

[0091] Example 1 is a gas delivery apparatus comprising an inlet portion comprising a plurality of inlet ports configured to receive gas from a gas source and a plurality of corresponding tapered surfaces associated with the plurality of inlet ports, each tapered surface of the plurality of tapered surfaces surrounding a corresponding inlet port of the plurality of inlet ports, and an outlet portion configured to deliver gas to a gas showerhead of a process chamber.

[0092] In Example 2, the subject matter of Example 1 includes subject matter where each tapered surface of the plurality of tapered surfaces comprises a first region and a second region, the first region having a first curvature and the second region having a second curvature, the first curvature being different from the second curvature.

[0093] In Example 3, the subject matter of Example 2 includes subject matter where the first region comprises a conical surface and the second region comprises a non-conical surface.

[0094] In Example 4, the subject matter of Example 3 includes subject matter in which the conical surface is associated with a constant slope and a constant height.

[0095] In Example 5, the subject matter of Examples 3-4 includes subject matter where the conical surface comprises a conical notch, the conical notch comprising a plurality of partially concentric circles having a common central axis.

[0096] In Example 6, the subject matter of Examples 3-5 includes subject matter where the non-conical surface comprises a non-conical cutout, the non-conical cutout comprises a plurality of arcs, the plurality of arcs being associated with corresponding central axes that are not coincident with one another.

[0097] In Example 7, the subject matter of Examples 2-6 includes subject matter where each tapered surface of the plurality of tapered surfaces further comprises a first intermixing region disposed between the first region and the second region.

[0098] In Example 8, the subject matter of Example 7 includes subject matter where each tapered surface of the plurality of tapered surfaces further comprises a second intermixing region disposed about an inlet port of the tapered surface.

[0099] Example 9 is a method for removing residual deposits from a process chamber, the method comprising: providing a gas delivery apparatus, the gas delivery apparatus having an inlet portion and an outlet portion, the inlet portion having a plurality of inlet ports and a plurality of corresponding tapered surfaces associated with the plurality of inlet ports, each tapered surface of the plurality of tapered surfaces surrounding a corresponding inlet port of the plurality of inlet ports; coupling the outlet portion of the gas delivery apparatus to a showerhead of the process chamber; coupling the inlet portion to a remote plasma source (RPS); flowing a cleaning gas generated by the RPS into the process chamber through the plurality of inlet ports of the gas delivery apparatus and the showerhead; and removing residual deposits from the process chamber using the cleaning gas.

[0100] In Example 10, the subject matter of Example 9 includes flowing a purge gas into the process chamber through multiple inlet ports of the gas delivery apparatus and through the showerhead.

[0101] In Example 11, the subject matter of Examples 9-10 includes subject matter where each tapered surface of the plurality of tapered surfaces comprises a first region and a second region, the first region having a first curvature and the second region having a second curvature, the first curvature being different from the second curvature.

[0102] In Example 12, the subject matter of Example 11 includes subject matter where the first region comprises a conical surface and the second region comprises a non-conical surface.

[0103] In Example 13, the subject matter of Example 12 includes subject matter where the conical surface is associated with a constant slope and a constant height.

[0104] Example 14 is a semiconductor substrate processing apparatus comprising: a remote plasma source (RPS) configured to generate plasma and radicals from a cleaning gas; a gas delivery apparatus coupled to the RPS, the gas delivery apparatus having an inlet portion and an outlet portion, the inlet portion having a plurality of inlet ports configured to receive gas from a gas source and a corresponding plurality of tapered surfaces associated with the plurality of inlet ports, each tapered surface of the plurality of tapered surfaces surrounding a corresponding inlet port of the plurality of inlet ports; a process chamber in which a semiconductor substrate is processed and a residue deposit is formed, the process chamber fluidly coupled to the RPS via the inlet portion and the outlet portion; and a controller module coupled to the RPS, the gas delivery apparatus, and the process chamber, the controller module causing the RPS to generate radicals from the cleaning gas flowing into the process chamber via the inlet portion and the outlet portion.

[0105] In Example 15, the subject matter of Example 14 includes subject matter where each tapered surface of the plurality of tapered surfaces comprises a first region and a second region, the first region having a first curvature and the second region having a second curvature, the first curvature being different from the second curvature.

[0106] In Example 16, the subject matter of Example 15 includes subject matter where the first region comprises a conical surface and the second region comprises a tapered non-conical surface.

[0107] In Example 17, the subject matter of Example 16 includes subject matter where the conical surface is associated with a constant slope and a constant height.

[0108] In Example 18, the subject matter of Examples 16-17 includes subject matter in which the conical surface comprises a conical notch, the conical notch comprising a plurality of partially concentric circles having a common central axis, and the non-conical surface comprises a non-conical notch, the non-conical notch comprising a plurality of arcs, the plurality of arcs being associated with corresponding central axes that are not coincident with one another.

[0109] In Example 19, the subject matter of Examples 16-18 includes subject matter where each tapered surface of the plurality of tapered surfaces further comprises a first intermixing region disposed between the first region and the second region.

[0110] In Example 20, the subject matter of Example 19 includes subject matter where each tapered surface of the plurality of tapered surfaces further comprises a second intermixing region disposed about an inlet port of the tapered surface.

[0111] Example 21 is at least one machine-readable medium including instructions that, when executed by a processing circuitry, cause the processing circuitry to perform operations to implement any of Examples 1-20.

[0112] Example 22 is an apparatus comprising means for implementing any of Examples 1-20.

[0113] Example 23 is a system for implementing any of Examples 1-20.

[0114] Example 24 is a method for implementing any of Examples 1-20.

[0115] Throughout this specification, multiple instances may implement components, operations, or structures that are described as a single instance. Although individual operations of one or more methods are illustrated and described as separate operations, one or more of the individual operations may be performed simultaneously, and nothing requires that the operations be performed in the order illustrated. Structures and functionality presented as separate components for an exemplary configuration may be implemented as combined structures or components. Similarly, structures and functionality presented as a single component may be implemented as separate components. These and other variations, modifications, additions, and improvements fall within the scope of the subject matter of this specification.

[0116] The embodiments illustrated herein are described in sufficient detail to enable those skilled in the art to practice the disclosed teachings. Other embodiments may be used and derived therefrom, such that structural and logical substitutions and changes may be made without departing from the scope of the disclosure. The detailed description is therefore not to be taken in a limiting sense, and the scope of the various embodiments is defined only by the appended claims, along with the full scope of equivalents to which such claims are entitled.

[0117] The claims may not recite every feature disclosed herein, as an embodiment may employ a subset of the features. Moreover, an embodiment may include fewer features than are disclosed in a particular example. Hereby, the following claims are hereby incorporated into the Detailed Description, with each claim standing on its own as a separate embodiment.

[0118] As used herein, the term "or" may be interpreted in either an inclusive or exclusive sense. Moreover, multiple instances may be provided for a resource, operation, or structure described herein as a single instance. Additionally, boundaries between various resources, operations, modules, engines, and data stores are somewhat arbitrary, and particular operations are illustrated in the context of particular example configurations. Other allocations of functionality are envisioned and may fall within the scope of various embodiments of the disclosure. In general, structures and functionality presented as separate resources in an example configuration may be implemented as a combined structure or resource. Similarly, structures and functionality presented as a single resource may be implemented as a separate resource. These and other variations, modifications, additions, and improvements fall within the scope of the embodiments of the disclosure as expressed by the appended claims. Accordingly, the specification and drawings should be regarded in an illustrative and not a limiting sense.

Claims

1. 1. A gas delivery apparatus comprising: An inlet portion, a plurality of inlet ports configured to receive gas from a gas source; an inlet portion comprising a corresponding plurality of tapered surfaces associated with the plurality of inlet ports, each tapered surface of the plurality of tapered surfaces surrounding a corresponding inlet port of the plurality of inlet ports; an outlet portion configured to deliver the gas to a gas showerhead of a process chamber; A gas delivery device comprising:

2. 2. The gas delivery apparatus of claim 1, wherein each tapered surface of the plurality of tapered surfaces comprises a first region and a second region, the first region having a first curvature and the second region having a second curvature, the first curvature being different from the second curvature.

3. The gas delivery apparatus of claim 2 , wherein the first region comprises a conical surface and the second region comprises a non-conical surface.

4. 4. The gas delivery apparatus of claim 3, wherein the conical surface is associated with a constant slope and a constant height.

5. 4. The gas delivery apparatus of claim 3, wherein the conical surface comprises a conical notch, the conical notch comprising a plurality of partial concentric circles having a common central axis.

6. 4. The gas delivery apparatus of claim 3, wherein the non-conical surface comprises a non-conical cutout, the non-conical cutout comprising a plurality of arcs, the plurality of arcs being associated with a corresponding plurality of central axes that are not coincident with one another.

7. 3. The gas delivery apparatus of claim 2, wherein each tapered surface of the plurality of tapered surfaces further comprises a first intermixing region disposed between the first region and the second region.

8. 8. The gas delivery apparatus of claim 7, wherein each tapered surface of the plurality of tapered surfaces further comprises a second intermixing region disposed about the inlet port of the tapered surface.

9. 1. A method for removing residual deposits from a process chamber, comprising: providing a gas delivery apparatus comprising an inlet portion and an outlet portion, the inlet portion comprising a plurality of inlet ports and a corresponding plurality of tapered surfaces associated with the plurality of inlet ports, each tapered surface of the plurality of tapered surfaces surrounding a corresponding one of the plurality of inlet ports; coupling the outlet portion of the gas delivery apparatus to a showerhead of the process chamber; coupling the inlet portion to a remote plasma source (RPS); flowing cleaning gas and radicals generated by the RPS into the process chamber through the multiple inlet ports of the gas delivery system and through the showerhead; removing the residual deposits from the process chamber using the cleaning gas; and A method comprising:

10. 10. The method of claim 9, The method further comprising flowing a purge gas into the process chamber through the multiple inlet ports of the gas delivery apparatus and the showerhead to remove cleaning by-products.

11. 10. The method of claim 9, wherein each tapered surface of the plurality of tapered surfaces comprises a first region and a second region, the first region having a first curvature and the second region having a second curvature, the first curvature being different from the second curvature.

12. The method of claim 11 , wherein the first region comprises a conical surface and the second region comprises a non-conical surface.

13. The method of claim 12 , wherein the conical surface is associated with a constant slope and a constant height.

14. A semiconductor substrate processing apparatus, comprising: a remote plasma source (RPS) configured to generate radicals from a cleaning gas; a gas delivery device coupled to the RPS, the gas delivery device comprising an inlet portion and an outlet portion, the inlet portion comprising: a plurality of inlet ports configured to receive gas from a gas source; a corresponding plurality of tapered surfaces associated with the plurality of inlet ports, each tapered surface of the plurality of tapered surfaces surrounding a corresponding one of the plurality of inlet ports; and a process chamber in which a semiconductor substrate is processed and a residual deposit is formed, the process chamber being fluidly coupled to the RPS via the inlet portion and the outlet portion; a controller module coupled to the RPS, the gas delivery system, and the process chamber, the controller module causing the RPS to generate plasma and radicals from the cleaning gas flowing into the process chamber through the inlet portion and the outlet portion; A semiconductor substrate processing apparatus comprising:

15. 15. The semiconductor substrate processing apparatus of claim 14, wherein each tapered surface of the plurality of tapered surfaces comprises a first region and a second region, the first region having a first curvature, the second region having a second curvature, and the first curvature is different from the second curvature.

16. 16. The semiconductor substrate processing apparatus of claim 15, wherein the first region comprises a conical surface and the second region comprises a tapered non-conical surface.

17. 17. The semiconductor substrate processing apparatus of claim 16, wherein the conical surface is associated with a constant slope and a constant height.

18. 17. The semiconductor substrate processing apparatus according to claim 16, the conical surface comprises a conical notch, the conical notch comprising a plurality of partial concentric circles having a common central axis; the non-conical surface comprises a non-conical cutout, the non-conical cutout comprises a plurality of arcs, the plurality of arcs being associated with corresponding central axes that are not coincident with one another; Semiconductor substrate processing equipment.

19. 17. The semiconductor substrate processing apparatus according to claim 16, wherein each of the tapered surfaces of the plurality of tapered surfaces further comprises a first intermixing region disposed between the first region and the second region.

20. 20. The semiconductor substrate processing apparatus of claim 19, wherein each tapered surface of the plurality of tapered surfaces further comprises a second intermixing region disposed about the inlet port of the tapered surface.

Images