Plasma cleaning device and semiconductor equipment

Abstract

The utility model belongs to the technical field of semiconductor technology, and discloses a plasma cleaning device and semiconductor equipment. The plasma cleaning device comprises a remote plasma source, a first cleaning pipeline and a second cleaning pipeline, wherein the remote plasma source is used for generating plasma. The first cleaning pipeline is connected to the remote plasma source and the reaction chamber, and the second cleaning pipeline is connected to the same remote plasma source and the exhaust pipeline and is connected to the upstream of the exhaust control valve. According to the device, the plasma can be directly input into the reaction chamber and the exhaust pipeline through the first cleaning pipeline and the second cleaning pipeline respectively, so that the plasma is prevented from being inactivated before reaching the exhaust control valve, the exhaust control valve can be thoroughly cleaned, the phenomena of accumulation, blockage and blockage of byproducts are avoided, and the service life of the reaction chamber is prolonged. Therefore, the time cost and the labor cost of disassembly and cleaning are reduced, and the efficiency of semiconductor process equipment is improved.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor process technology, and in particular to a plasma cleaning device and semiconductor equipment. Background Technology

[0002] In existing semiconductor process equipment, plasma is commonly used to clean the reaction chamber and the exhaust pipes connected to it. The plasma is generated from a remote plasma source located outside the reaction chamber and connected to it via pipes. The plasma generated by the remote plasma source passes sequentially through the reaction chamber and the exhaust pipes, thereby cleaning the reaction chamber and the exhaust pipes of any residual reaction byproducts.

[0003] However, during cleaning, the exhaust pipe is often not thoroughly cleaned, leading to the accumulation, jamming, and blockage of by-products in the exhaust pipe, especially at control valves such as butterfly valves. This necessitates manual disassembly and cleaning, which is time-consuming and labor-intensive, affecting the working efficiency of semiconductor process equipment.

[0004] Therefore, there is an urgent need for a plasma cleaning device and semiconductor equipment to solve the above-mentioned technical problems. Utility Model Content

[0005] The first objective of this invention is to provide a plasma cleaning device that can thoroughly clean the reaction chamber and exhaust pipe, thereby preventing the accumulation, jamming, and blockage of byproducts at the control valve of the exhaust pipe.

[0006] To achieve this objective, the present invention adopts the following technical solution:

[0007] A plasma cleaning apparatus for cleaning the reaction chamber of a semiconductor device and the exhaust pipe connected to the reaction chamber, comprising:

[0008] A remote plasma source, wherein the remote plasma source is used to generate plasma;

[0009] A first cleaning pipeline, one end of which is connected to the remote plasma source, and the other end of which is connected to the reaction chamber, wherein a first portion of the plasma can flow sequentially through the first cleaning pipeline, the reaction chamber, and the exhaust pipeline;

[0010] A second cleaning pipeline has one end connected to the same remote plasma source as the first cleaning pipeline, and the other end connected to the exhaust pipeline. The exhaust pipeline is equipped with an exhaust control valve, and the second cleaning pipeline is connected upstream of the exhaust control valve. A second portion of the plasma can flow sequentially through the second cleaning pipeline and the exhaust pipeline.

[0011] Preferably, the first cleaning pipeline and the second cleaning pipeline are connected to the remote plasma source via a three-way valve or a three-way connector.

[0012] Preferably, the three-way valve includes a three-way regulating valve for adjusting the ratio of plasma flowing into the first cleaning pipeline and plasma flowing into the second cleaning pipeline.

[0013] Preferably, the first cleaning pipeline and the second cleaning pipeline are connected by the tee joint, the first cleaning pipeline is equipped with a first cleaning control valve, and the first cleaning control valve is located between the tee joint and the reaction chamber.

[0014] The second cleaning pipeline is equipped with a second cleaning control valve, which is located between the tee joint and the exhaust pipeline.

[0015] Preferably, the bending angle of the first cleaning pipeline and / or the second cleaning pipeline is not less than 90 degrees.

[0016] Preferably, the bending angle formed after the connection between the second cleaning pipe and the exhaust pipe is not less than 90 degrees; and / or,

[0017] The bending angle formed after the connection between the second cleaning pipeline and the first cleaning pipeline is not less than 90 degrees.

[0018] Preferably, the first cleaning pipeline and / or the second cleaning pipeline are provided with an inner lining structure, which is used for heat insulation and / or corrosion protection, and the inner lining structure is made of at least one material selected from ceramics, metals and fluoroplastics.

[0019] Preferably, the lining structure includes detachably disposed lining parts; and / or,

[0020] The inner lining structure includes a ceramic layer, a metal layer, or a fluoroplastic layer integrally disposed on the inner wall surface of the first cleaning pipeline and / or the second cleaning pipeline.

[0021] Preferably, the first cleaning pipeline and / or the second cleaning pipeline include a corrugated pipe, and the inner lining structure is provided inside the corrugated pipe.

[0022] Preferably, the inner lining structure includes a bushing tube that passes through the corrugated pipe, and the end of the corrugated pipe is provided with a connecting flange, with the bushing tube passing through the connecting flange and the corrugated pipe.

[0023] Preferably, the exhaust pipe is connected to a purging structure, which is connected between the exhaust control valve and the reaction chamber, and the second cleaning pipe is connected between the purging structure and the reaction chamber.

[0024] Preferably, the plasma cleaning device further includes a third cleaning pipeline, the first cleaning pipeline is connected to the top of the reaction chamber, one end of the third cleaning pipeline is connected to the same remote plasma source as the first cleaning pipeline and the second cleaning pipeline, and the other end of the third cleaning pipeline is connected to the bottom of the reaction chamber. A third portion of the plasma can flow sequentially through the third cleaning pipeline, the reaction chamber and the exhaust pipeline.

[0025] The advantages of the plasma cleaning device provided by this invention are as follows: Compared with existing cleaning devices, the plasma cleaning device provided by this invention can directly input plasma into the reaction chamber and the exhaust pipe through the first cleaning pipe and the second cleaning pipe, respectively. This avoids the plasma being deactivated before reaching the exhaust control valve, ensuring a thorough cleaning effect at the exhaust control valve and preventing byproduct accumulation, jamming, and blockage. This reduces the time and labor costs of disassembly and cleaning, and improves the efficiency of semiconductor process equipment. Furthermore, using only a single remote plasma source to separately input plasma into the reaction chamber and the exhaust pipe significantly reduces the structural cost of the plasma cleaning device.

[0026] The second objective of this invention is to provide a semiconductor device that is easy to maintain and clean, and has high working efficiency.

[0027] To achieve this objective, the present invention adopts the following technical solution:

[0028] A semiconductor device includes at least two reaction chambers, each reaction chamber being connected to an exhaust pipe and a plasma cleaning device as described above, each reaction chamber being connected to a remote plasma source, a first cleaning pipe and a second cleaning pipe in the plasma cleaning device.

[0029] The beneficial effects of the semiconductor equipment provided by this utility model are as follows: By connecting to a plasma cleaning device, it can be ensured that the second part of the plasma fully cleans the structure of the exhaust control valve and other structures that are prone to the accumulation of by-products before deactivation, thereby avoiding the phenomenon of jamming and blockage at the exhaust control valve, reducing the maintenance frequency and maintenance cost of the semiconductor equipment, and improving the working efficiency of the semiconductor equipment. Attached Figure Description

[0030] Figure 1 This is an assembly drawing of the semiconductor process apparatus and plasma cleaning apparatus provided by this utility model;

[0031] Figure 2 This is an assembly drawing of the first and second cleaning pipelines in the plasma cleaning device provided by this utility model.

[0032] Figure 3 This is an internal structural diagram of the corrugated pipe and bushing provided by this utility model, assembled by gravity.

[0033] Figure 4 This is an internal structural diagram of the welded connection between the corrugated pipe and the bushing provided by this utility model.

[0034] In the picture:

[0035] 10. Reaction chamber; 11. Exhaust pipe; 111. Exhaust control valve; 112. Purge structure; 12. Main exhaust pipe; 121. Main exhaust valve; 13. Cover;

[0036] 20. Remote plasma source; 21. First cleaning pipeline; 211. First cleaning control valve; 22. Second cleaning pipeline; 221. Second cleaning control valve; 23. T-connector;

[0037] 100. Corrugated pipe; 101. Connecting flange; 102. Bushing; 1021. Snap-fit ​​part. Detailed Implementation

[0038] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, not the entire structure.

[0039] In the description of this utility model, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0040] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0041] In the description of this embodiment, the terms "upper," "lower," "right," and "left," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. In addition, the terms "first" and "second" are only used for distinction in description and have no special meaning.

[0042] The following is based on the appendix Figure 1 To be continued Figure 4 This invention introduces the plasma cleaning apparatus and semiconductor equipment provided by this utility model.

[0043] refer to Figure 1 As shown, a conventional semiconductor process apparatus includes a reaction chamber 10 and an exhaust pipe 11 connected to the reaction chamber 10. The reaction chamber 10 is used to process a substrate, and deposition (including vapor deposition, epitaxial deposition, etc.), diffusion, or etching processes can be performed within the reaction chamber 10. These processes utilize process gases, which can create deposition, diffusion, or etching effects on the substrate and generate byproducts. Unreacted process gases and byproducts settle to the bottom of the reaction chamber 10 and are eventually discharged through the exhaust pipe 11 connected to the bottom of the reaction chamber 10. The exhaust pipe 11 is connected to an exhaust pump, which provides power for the flow of process gases and byproducts, thereby driving the process gases and byproducts to exit the semiconductor process apparatus through the exhaust pipe 11 and the exhaust pump.

[0044] Continue to refer to Figure 1 As shown, the plasma cleaning device mainly includes a remote plasma source 20, a first cleaning pipeline 21, and a second cleaning pipeline 22. The remote plasma source 20 is located outside the reaction chamber 10 and can generate plasma. This plasma has the characteristics of high temperature and high energy, and can react with by-products and other pollutants and impurities, decomposing them into volatile substances, thereby achieving the purpose of cleaning.

[0045] One end of the first cleaning conduit 21 is connected to the remote plasma source 20, and the other end is connected to the reaction chamber 10. A portion of the plasma generated by the remote plasma source 20 enters the reaction chamber 10 through the first cleaning conduit 21, reacting first with byproducts and other contaminants and impurities within the reaction chamber 10. It then enters the exhaust conduit 11, reacting with byproducts and other contaminants and impurities within the exhaust conduit 11. Finally, under the action of the exhaust pump, volatile substances are discharged. Preferably, the first cleaning conduit 21 is connected to the top of the reaction chamber 10, allowing the plasma to fill the reaction chamber 10 from top to bottom, achieving a more thorough cleaning effect.

[0046] One end of the second cleaning conduit 22 is also connected to the remote plasma source 20, and the other end is connected to the exhaust conduit 11. The exhaust conduit 11 includes an exhaust control valve 111 (e.g., a butterfly valve), which is used to isolate the exhaust conduit 11 during the above-mentioned processing, thereby creating an environment that meets the requirements of the vacuum and low pressure within the reaction chamber 10 required by the processing. The second cleaning conduit 22 is connected upstream of the exhaust control valve 111, that is, between the end of the exhaust conduit 11 connected to the reaction chamber 10 and the exhaust control valve 111. The second part of the plasma can flow directly into the exhaust conduit 11 through the second cleaning conduit 22, thus bypassing the reaction chamber 10. This avoids plasma deactivation and failure to volatilize due to long flow paths or bends, ensuring sufficient and thorough cleaning of the exhaust conduit, especially at the exhaust control valve 111.

[0047] Compared to existing cleaning devices, the plasma cleaning device provided in this invention can directly input plasma into the reaction chamber 10 and the exhaust pipe 11 through the first cleaning pipe 21 and the second cleaning pipe 22, respectively. This avoids the plasma from being deactivated before reaching the exhaust control valve 111, ensuring a thorough cleaning effect at the exhaust control valve 111. It also avoids the accumulation, jamming, and blockage of by-products, thereby reducing the time and labor costs of disassembly and cleaning, and improving the efficiency of semiconductor process equipment.

[0048] Preferably, in this embodiment, the first cleaning pipe 21, the second cleaning pipe 22, and the exhaust pipe 11 include one or more pipe fittings, allowing plasma to flow under the constraint of these fittings. The bending angle of the pipe fitting itself and the angle formed by connecting pipe fittings is not less than 90 degrees and not greater than 180 degrees, thereby reducing the probability of plasma deactivation during flow. When measuring the bending angle, for a straight pipe, the axis of one end coincides with the axis of the other end. Using the midpoint of the pipe fitting as the origin, the angle between the two axes can be measured as 180 degrees, which is the bending angle of the straight pipe. For an L-shaped bend, the axis of one end of the L-shaped bend is perpendicular to the axis of the other end. Using the intersection of the two axes as the origin, the bending angle can be measured as 90 degrees. Similarly, when two straight pipes are connected, the angle between the axes of the two straight pipes can be measured using the connection point of the two pipe fittings as the origin. This angle is the bending angle formed after the pipe fittings are connected. Therefore, the pipe fittings used in this utility model can be straight pipes, L-shaped bends, or something in between.

[0049] For example, the first cleaning conduit 21 is a straight pipe, integrally formed into a single pipe component. This pipe component is a straight pipe with a bending angle of 180 degrees, falling within the range of not less than 90 degrees and not more than 180 degrees, thus preventing plasma deactivation during flow. Optionally, in some embodiments, the second cleaning conduit 22 includes four sequentially connected pipe components, each a straight pipe with a bending angle of 180 degrees, and the included angle between any two adjacent connected pipe components is set to be not less than 90 degrees and not more than 180 degrees, which also reduces the probability of plasma deactivation during flow.

[0050] Taking exhaust pipe 11 as an example again, refer to Figure 1 As shown, one of the pipe components includes a bend with a bend at one point, and the bending angle at the bend is not less than 90 degrees and not more than 180 degrees. This avoids the phenomenon of plasma deactivation due to excessive bending angle when the plasma flows through the pipe component, thereby improving the utilization rate of plasma, reducing the power requirement of the remote plasma source 20, and thus reducing the cost of the cleaning device.

[0051] It should be noted that when a pipe fitting (or a pipeline, such as the second cleaning pipeline 22 in this embodiment) has multiple bends, the bend or pipeline can be regarded as an equivalent structure formed by connecting multiple straight pipes. Therefore, as long as the bending angle of each connection is not less than 90 degrees and not greater than 180 degrees, it also falls within the scope of protection of this utility model.

[0052] Optionally, in this embodiment, the exhaust pipe 11 is connected to a purging structure 112, which is connected between the exhaust control valve 111 and the reaction chamber 10. This purging structure 112 can blow inert gas into the exhaust pipe 11 at a high flow rate, thereby purging and cleaning the exhaust control valve 111. The second cleaning pipe 22 is connected between the purging structure 112 and the reaction chamber 10, thereby cleaning the connection between the purging structure 112 and the exhaust pipe 11, preventing the accumulation of byproducts and other impurities at the connection.

[0053] Continue to refer to Figure 1 As shown, in this embodiment, the remote plasma source 20 is connected to a supply pipeline, which is connected to the first cleaning pipeline 21 and the second cleaning pipeline 22 via a three-way valve. After flowing through the supply pipeline and the three-way valve, the plasma enters the first cleaning pipeline 21 and the second cleaning pipeline 22, respectively. The three-way valve can isolate the supply pipeline from the first cleaning pipeline 21 and the second cleaning pipeline 22, thereby facilitating the creation of a vacuum, low-pressure, and other favorable environment for the processing within the reaction chamber 10. Preferably, the three-way valve is a three-way regulating valve, which can adjust the ratio of plasma flowing into the first cleaning pipeline 21 to plasma flowing into the second cleaning pipeline 22, thus allowing for a balance between cleaning the reaction chamber 10 and the exhaust pipeline 11 by adjusting the ratio.

[0054] Alternatively, in some embodiments, such as Figure 2 As shown, the supply pipeline can also be connected to the first cleaning pipeline 21 and the second cleaning pipeline 22 via a tee connector 23. Simultaneously, the first cleaning pipeline 21 is equipped with a first cleaning control valve 211, which is located between the tee connector 23 and the reaction chamber 10. The first cleaning pipeline 21 can be isolated via the first cleaning control valve 211. The second cleaning pipeline 22 is equipped with a second cleaning control valve 221, which is located between the tee connector 23 and the exhaust pipeline 11. The second cleaning pipeline 22 can be isolated via the second cleaning control valve 221. When both the first cleaning pipeline 21 and the second cleaning pipeline 22 are isolated, it is also convenient to achieve a vacuum, low pressure, and other favorable environments for the processing within the reaction chamber 10.

[0055] Optionally, in this embodiment, the first cleaning pipe 21, the second cleaning pipe 22, or the exhaust pipe 11 is provided with an inner lining structure. The inner lining structure is made of at least one material selected from ceramics, metals (e.g., C276 Hastelloy), and fluoroplastics (e.g., Teflon), which can provide heat insulation or corrosion protection, thereby preventing the high temperature and high energy characteristics of plasma from damaging the pipe components and the seals connected to the pipe components, affecting their service life and airtightness.

[0056] In this embodiment, the inner lining structure includes detachably disposed inner lining components. Exemplarily, the inner lining components include structures such as a bushing 102 and a protective sheet. The bushing 102 or the protective sheet is disposed inside the first cleaning pipe 21, the second cleaning pipe 22, or the exhaust pipe 11, which can reduce the degree of heating of the pipe components by plasma and the degree of corrosion of the inner wall of the pipe components, and also facilitate maintenance by replacing the bushing 102, the protective sheet, etc.

[0057] More specifically, the pipe fittings include a corrugated pipe 100, which serves to prevent rigid connections and facilitate the assembly and installation of the pipe fittings. For example... Figure 3 As shown, the corrugated pipe 100 is a retractable pipe made of flexible material, and two connecting flanges 101 are fixedly installed at both ends of the retractable pipe, which can be used to connect the corrugated pipe 100 to other adjacent pipe fittings.

[0058] Optionally, in this embodiment, the bushing 102 is made of Hastelloy alloy, with a protruding snap-fit ​​portion 1021 on the outer circumferential surface of one end, and the other end extending into the bellows 100 through the connecting flange 101, thereby providing heat insulation and corrosion protection for the inner wall of the bellows 100. When installing the bushing 102, the bellows 100 is set at an angle or vertically, and the other end of the bushing 102 extends into the connecting flange 101 and the bellows 100. The snap-fit ​​portion 1021 can abut against the end face of the connecting flange 101 under the action of gravity, thereby fixing the bushing 102 inside the bellows 100. Before the bushing 102 is installed, the local temperature of the bellows 100 can reach 262 degrees Celsius or higher. After the bushing 102 is installed, the overall temperature of the bellows 100 can be reduced to between 60 degrees Celsius and 87 degrees Celsius, achieving a very significant heat insulation protection effect, protecting the personal safety of operators, extending the service life of pipe fittings, and improving the efficiency of semiconductor process equipment.

[0059] In some embodiments, the bushing 102 and the connecting flange 101 can be threaded or snap-fitted together to detachably fix the bushing 102 inside the bellows 100. Alternatively, the bushing 102 can be welded to one of the connecting flanges 101, allowing the bushing 102 to be installed at any angle without being restricted by gravity. Furthermore, besides the bellows 100, other pipe fittings can also be fixed using the above-described methods, or the lining structure and pipe fittings can be integrally connected or further reinforced using welding or other methods. This invention does not specifically limit the specific methods used. For example, refer to... Figure 4As shown, the bushing 102 is welded and fixed to a connecting flange 101 located on the left side of the figure, and can be slidably inserted through a connecting flange 101 on the right side of the figure, thereby improving the connection strength between the bushing 102 and the connecting flange 101.

[0060] Of course, in some other embodiments, a ceramic layer, a metal layer, or a fluoroplastic layer can be integrally formed on the inner wall of the pipe fitting, which can also provide heat insulation and corrosion protection for the pipe fitting, and is also within the scope of protection of this utility model.

[0061] Optionally, in some embodiments, the plasma cleaning apparatus further includes a third cleaning conduit. A first cleaning conduit 21 is connected to the top of the reaction chamber 10, one end of the third cleaning conduit is connected to a remote plasma source 20, and the other end is connected to the bottom of the reaction chamber 10. A third portion of the plasma can flow sequentially through the third cleaning conduit, the reaction chamber 10, and the exhaust conduit 11. In conjunction with the first cleaning conduit 21, plasma can simultaneously enter the reaction chamber 10 from both the top and bottom, cleaning both the top and bottom areas of the reaction chamber 10 at the same time. This improves the overall cleaning effect of the chamber, increases cleaning efficiency, and saves cleaning time.

[0062] It should be noted that, in order to improve the processing efficiency of the substrate, some semiconductor process apparatuses are equipped with two or more reaction chambers 10, each of which is connected to an exhaust pipe 11. Correspondingly, in a plasma cleaning apparatus, two or more remote plasma sources 20, two or more first cleaning pipes 21, and two or more second cleaning pipes 22 are provided. Each reaction chamber 10 is connected to one first cleaning pipe 21, one second cleaning pipe 22, and one remote plasma source 20, enabling independent cleaning of each reaction chamber 10 and ensuring the continuous processing capability of the multi-chamber semiconductor process apparatus. Optionally, multiple exhaust pipes 11 are connected to a main exhaust pipe 12, which is equipped with a main exhaust valve 121 to control the unified discharge of gases.

[0063] This utility model also provides a device mounting method for installing the aforementioned plasma cleaning device on a semiconductor process apparatus. The device mounting method includes:

[0064] A remote plasma source 20 is provided outside the reaction chamber 10. A first cleaning pipeline 21 is provided between the remote plasma source 20 and the reaction chamber 10. A second cleaning pipeline 22 is provided between the remote plasma source 20 and the exhaust pipeline 11. The second cleaning pipeline 22 is connected upstream of the exhaust control valve 111 of the exhaust pipeline 11.

[0065] Specifically, in the above steps, the remote plasma source 20 can be installed on the rack of a semiconductor process device, or on a structure specifically designed for installing the remote plasma source 20, such as a bench, as long as it can be fixedly installed. When setting up the first cleaning pipeline 21, a first connection port for connecting pipe fittings needs to be added to the reaction chamber 10, and then one or more pipe fittings in the first cleaning pipeline 21 are connected between the remote plasma source 20 and the reaction chamber 10. Optionally, in this embodiment, the reaction chamber 10 is provided with a cover 13, which covers the opening of the reaction chamber 10 from top to bottom to facilitate the achievement of low pressure, vacuum, and other environmental conditions. The cover 13 is provided with the aforementioned first connection port. Of course, in some embodiments, the first connection port can also be provided at the upper end of the side wall of the reaction chamber 10, which is also within the scope of protection of this utility model.

[0066] Similarly, when setting up the second cleaning pipeline 22, a second connection port needs to be set up in the exhaust pipeline 11 upstream of the exhaust control valve 111, and then one or more pipe components in the second cleaning pipeline 22 are connected between the remote plasma source 20 and the exhaust pipeline 11.

[0067] The above-described device installation method allows for the convenient installation of plasma cleaning devices on existing semiconductor process equipment, enabling high-quality and efficient cleaning of the semiconductor process equipment, improving its processing efficiency and quality, and significantly preventing byproduct accumulation, jamming, and blockage at the exhaust control valve 111, thus ensuring a more thorough cleaning of the semiconductor process equipment.

[0068] This invention also provides a cleaning method for cleaning the reaction chamber 10 of a semiconductor process apparatus and the exhaust pipe 11 connected to the reaction chamber 10. The cleaning method includes:

[0069] The first part of the driving plasma flows sequentially through the reaction chamber 10 and the exhaust pipe 11, while the second part of the driving plasma enters the exhaust pipe 11 directly from upstream of the exhaust control valve 111 in the exhaust pipe 11.

[0070] Specifically, by using the plasma cleaning device described above, the first part of the plasma can flow through the reaction chamber 10 and the exhaust pipe 11 via the first cleaning pipe 21, and the second part of the plasma can be driven from upstream of the exhaust control valve 111 into the exhaust pipe 11 via the second cleaning pipe 22.

[0071] By passing the first part of the plasma through the reaction chamber 10 and the exhaust pipe 11, the reaction chamber 10 and the exhaust pipe 11 can be cleaned. By passing the second part of the plasma over the reaction chamber 10 and entering the exhaust pipe 11 directly from the upstream of the exhaust control valve 111, it can be ensured that the second part of the plasma fully cleans the exhaust control valve 111 and other structures that are prone to the accumulation of by-products before deactivation, thereby avoiding the phenomenon of jamming or blockage at the exhaust control valve 111.

[0072] In the description of this specification, references to terms such as "some embodiments," "other embodiments," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0073] Obviously, the above embodiments of this utility model are merely examples for clearly illustrating the present utility model, and are not intended to limit the implementation of the present utility model. Those skilled in the art can make various obvious changes, readjustments, and substitutions without departing from the protection scope of this utility model. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model should be included within the protection scope of the claims of this utility model.

Claims

1. Plasma cleaning apparatus for cleaning a reaction chamber (10) of a semiconductor device and an exhaust line (11) connected to the reaction chamber (10), characterized in that include: A remote plasma source (20) for generating plasma; A first cleaning pipeline (21) is connected at one end to the remote plasma source (20) and at the other end to the reaction chamber (10). A first part of the plasma can flow sequentially through the first cleaning pipeline (21), the reaction chamber (10) and the exhaust pipeline (11). The second cleaning pipeline (22) has one end connected to the first cleaning pipeline (21) to the same remote plasma source (20), and the other end connected to the exhaust pipeline (11). The exhaust pipeline (11) is equipped with an exhaust control valve (111), and the second cleaning pipeline (22) is connected upstream of the exhaust control valve (111). The second part of the plasma can flow through the second cleaning pipeline (22) and the exhaust pipeline (11) in sequence.

2. The plasma cleaning apparatus according to claim 1, characterized in that, The first cleaning line (21) and the second cleaning line (22) are connected to the remote plasma source (20) via a three-way valve or a three-way connector (23).

3. The plasma cleaning apparatus according to claim 2, characterized in that, The three-way valve includes a three-way regulating valve, which is used to regulate the ratio of the plasma flowing into the first cleaning pipeline (21) and the plasma flowing into the second cleaning pipeline (22).

4. The plasma cleaning apparatus according to claim 2, characterized in that, The first cleaning pipeline (21) and the second cleaning pipeline (22) are connected to the tee connector (23). The first cleaning pipeline (21) is equipped with a first cleaning control valve (211), which is located between the tee connector (23) and the reaction chamber (10). The second cleaning pipeline (22) is equipped with a second cleaning control valve (221), which is located between the tee joint (23) and the exhaust pipeline (11).

5. The plasma cleaning apparatus according to claim 1, characterized in that, The bending angle of the first cleaning pipeline (21) and / or the second cleaning pipeline (22) is not less than 90 degrees.

6. The plasma cleaning apparatus according to claim 5, characterized in that, The bending angle formed after the connection between the second cleaning pipe (22) and the exhaust pipe (11) is not less than 90 degrees; and / or, The bending angle formed after the connection between the second cleaning pipeline (22) and the first cleaning pipeline (21) is not less than 90 degrees.

7. The plasma cleaning apparatus according to claim 1, characterized in that, The first cleaning pipeline (21) and / or the second cleaning pipeline (22) are provided with an inner lining structure, which is used for heat insulation and / or corrosion protection, and the inner lining structure is made of at least one material selected from ceramics, metals and fluoroplastics.

8. The plasma cleaning apparatus according to claim 7, characterized in that, The lining structure includes detachably disposed lining parts; and / or, The inner lining structure includes a ceramic layer, a metal layer, or a fluoroplastic layer integrally disposed on the inner wall surface of the first cleaning pipeline (21) and / or the second cleaning pipeline (22).

9. The plasma cleaning apparatus according to claim 7, characterized in that, The first cleaning pipeline (21) and / or the second cleaning pipeline (22) include a corrugated pipe (100) and the inner lining structure is provided inside the corrugated pipe (100).

10. The plasma cleaning apparatus according to claim 9, characterized in that, The inner lining structure includes a bushing (102) that passes through the corrugated pipe (100). The end of the corrugated pipe (100) is provided with a connecting flange (101), and the bushing (102) passes through the connecting flange (101) and the corrugated pipe (100).

11. The plasma cleaning apparatus according to claim 1, characterized in that, The exhaust pipe (11) is connected to a purging structure (112), which is connected between the exhaust control valve (111) and the reaction chamber (10). The second cleaning pipe (22) is connected between the purging structure (112) and the reaction chamber (10).

12. The plasma cleaning apparatus according to claim 1, characterized in that, The plasma cleaning device further includes a third cleaning pipeline. The first cleaning pipeline (21) is connected to the top of the reaction chamber (10). One end of the third cleaning pipeline, the first cleaning pipeline (21), and the second cleaning pipeline (22) are connected to the same remote plasma source (20). The other end of the third cleaning pipeline is connected to the bottom of the reaction chamber (10). The third part of the plasma can flow sequentially through the third cleaning pipeline, the reaction chamber (10), and the exhaust pipeline (11).

13. A semiconductor device, characterized by, The semiconductor device includes at least two reaction chambers (10), each reaction chamber (10) is connected to an exhaust pipe (11) and a plasma cleaning device as described in any one of claims 1-12, each reaction chamber (10) being connected to a remote plasma source (20), a first cleaning pipe (21) and a second cleaning pipe (22) of the plasma cleaning device.

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