Electrostatic chuck with self-sealing gas conduits and / or reduced clogging from residues - Patents.com

Abstract

An electrostatic chuck for a substrate includes a base plate including a first side and a cavity disposed on the first side. A top plate includes a first plug. A first spring member is disposed in the cavity. A second plug is disposed between the top plate and the first spring member. A bonding material attaches the top plate to the first side of the base plate.

Description

[Technical field]

[0001] [CROSS REFERENCE TO RELATED APPLICATIONS] This application claims the benefit of U.S. Provisional Application No. 63 / 292,743, filed December 22, 2021, the entire disclosure of which is incorporated herein by reference.

[0002] The present disclosure relates generally to substrate processing systems, and more particularly to electrostatic chucks having self-sealing gas conduits and / or reduced clogging from residue. [Background technology]

[0003] The background description provided herein is intended to provide a general overview of the contents of the present disclosure. Work by the currently named inventors within the scope of what is described in this Background section, as well as aspects of the description that may not otherwise be regarded as prior art at the time of filing, are not admitted, expressly or impliedly, as prior art against the present disclosure.

[0004] Semiconductor processing systems are used to process substrates, such as semiconductor wafers. Examples of substrate processing include deposition, etching, cleaning, and / or other processes. During processing, one or more process gases are supplied to the processing chamber and a plasma is struck in the processing chamber to promote a chemical reaction.

[0005] The processing chamber includes an electrostatic chuck (ESC) for holding the substrate in place during processing. The ESC includes clamping electrodes that are energized to hold the substrate against the top plate of the ESC and are de-energized when the substrate is loaded or removed from the ESC. The ESC may also include resistive heaters embedded in the top plate and / or cooling channels in the base plate to control the temperature of the substrate during processing and reduce processing non-uniformities. To enhance thermal uniformity, the ESC delivers an inert gas (such as helium (He)) to the backside of the substrate. The inert gas acts as a heat transfer medium between the top plate and the backside of the substrate. Summary of the Invention

[0006] An electrostatic chuck for a substrate includes a base plate including a first side and a cavity disposed on the first side. A top plate includes a first plug. A first spring member is disposed in the cavity. A second plug is disposed between the top plate and the first spring member. A bonding material attaches the top plate to the first side of the base plate.

[0007] In other features, a first spring member biases the second plug into direct contact with a second surface of the top plate, and the top plate, the first plug, and the second plug are made of ceramic. A gasket is disposed about a cavity between the top plate and the base plate. A bonding material is located radially outward of the gasket. The first plug is made of porous ceramic and is formed in situ in the top plate. The second plug is made of porous ceramic. The second plug has a diameter larger than a diameter of the first plug.

[0008] In other features, the second plug includes an annular outer channel formed in a radially outer surface thereof for receiving a bonding material. The second plug is made of a porous ceramic and does not include gas passage holes. The second plug is made of a porous ceramic and includes gas passage holes extending partially through the second plug. The second plug is made of a porous ceramic and includes gas passage holes extending partially through the second plug.

[0009] In other features, the second plug includes a cylindrical body having a radially outer portion made of non-porous ceramic and a radially inner portion made of porous ceramic. A sleeve is disposed between the second plug and a side of the cavity. A second spring member is disposed within the cavity to bias the sleeve against the top plate. The second plug is made of porous ceramic. The sleeve is made of ceramic.

[0010] A method of making an electrostatic chuck for a substrate includes providing a base plate including a first side and a cavity disposed on the first side, providing a top plate including a first plug, disposing a first spring member in the cavity, disposing a second plug between the top plate and the first spring member, and attaching the top plate to the first side of the base plate using a bonding material.

[0011] In other features, the method includes biasing the second plug into direct contact with the second surface of the top plate using a first spring member. The top plate, the first plug, and the second plug are made of ceramic. The method includes disposing a gasket around the cavity between the top plate and the base plate prior to application of a bonding material. The method includes forming the first plug in situ in the top plate. The first plug is made of porous ceramic.

[0012] In other features, the second plug is made of a porous ceramic. The second plug has a diameter greater than a diameter of the first plug. The method includes forming an annular channel on a radially outer surface of the second plug for receiving a bonding material. The second plug is made of a porous ceramic and does not include gas passage holes. The second plug is made of a porous ceramic and includes gas passage holes extending partially through the second plug. The second plug is made of a porous ceramic and includes gas passage holes extending partially through the second plug. The second plug includes a cylindrical body having a radially outer portion made of non-porous ceramic and a radially inner portion made of porous ceramic.

[0013] In other features, the method includes disposing a sleeve between the second plug and a side of the cavity. The method includes biasing the sleeve against the top plate using a second spring member. The second plug is made of a porous ceramic. The sleeve is made of ceramic.

[0014] An electrostatic chuck for a substrate includes a base plate including a first surface and a cavity disposed on the first surface. The cavity includes a first cavity portion defining a first annular surface and a second cavity portion defining a second annular surface. A top plate includes a first plug. A first spring member is disposed on the first annular surface within the first cavity portion. A second plug is disposed on the second annular surface between the top plate and the second annular surface. A sleeve is disposed around the second plug and over the first spring member. A bonding material attaches the top plate to the first surface of the base plate.

[0015] In other features, a first spring member biases an upper surface of the sleeve into direct contact with a bottom surface of the top plate. A gasket is disposed about the cavity between the top plate and the base plate, and a bonding material is located radially outward of the gasket. A first plug is made of a porous ceramic and is formed in situ in the top plate. A second plug has a diameter greater than a diameter of the first plug.

[0016] In other features, a bonding material bonds the second plug to the sidewall of the second cavity portion. The second plug is made of a porous ceramic and does not include gas passage holes. The second plug is made of a porous ceramic and includes gas passage holes extending partially through the second plug. The second plug is made of a porous ceramic and includes gas passage holes extending through the second plug. The second plug is made of a non-porous ceramic and includes gas passage holes extending through the second plug.

[0017] A method of making an electrostatic chuck for a substrate includes providing a base plate including a first surface and a cavity disposed on the first surface, the cavity including a first cavity portion defining a first annular surface and a second cavity portion defining a second annular surface; providing a top plate including a first plug; disposing a first spring member on the first annular surface in the first cavity portion; disposing a second plug on the second annular surface between the top plate and the second annular surface; disposing a sleeve around the second plug and over the first spring member; and bonding the top plate to the first surface of the base plate.

[0018] In other features, the method includes biasing the sleeve into direct contact with a bottom surface of the top plate using a first spring member. When the top plate is bonded to the base plate, a gap is defined between an upper surface of the second plug and a bottom surface of the top plate. The method includes disposing a gasket around a cavity between the top plate and the base plate, with the bonding material located radially outward of the gasket. The first plug is made of porous ceramic and is formed in situ in the top plate. The second plug has a diameter larger than a diameter of the first plug. The second plug is made of porous ceramic and does not include a gas passage hole. The second plug is made of porous ceramic and includes a gas passage hole extending partially through or through the second plug. The second plug is made of non-porous ceramic and includes a gas passage hole extending through the second plug. The method includes bonding the second plug to a sidewall of the second cavity portion.

[0019] Other areas of applicability of the present disclosure will become apparent from the detailed description, the claims, and the drawings. The detailed description and specific examples are for purposes of illustration only and are not intended to limit the scope of the present disclosure. [Brief description of the drawings]

[0020] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:

[0021] [Figure 1] FIG. 1 is a functional block diagram of an example process chamber of a substrate processing system including an electrostatic chuck according to the present disclosure.

[0022] [Diagram 2] FIG. 2 is a cross-sectional side view of an example of an electrostatic chuck (ESC).

[0023] [Diagram 3] FIG. 3 is a cross-sectional side view of one example of an ESC having self-sealing gas conduits and / or reduced clogging from residue in accordance with the present disclosure.

[0024] [Figure 4] FIG. 4 is a cross-sectional side view of another example ESC having self-sealing gas conduits and / or reduced clogging from residue in accordance with the present disclosure. [Figure 5A] FIG. 5A is a cross-sectional side view of another example ESC having self-sealing gas conduits and / or reduced clogging from residue in accordance with the present disclosure. [Figure 5B] FIG. 5B is a cross-sectional side view of another example ESC having self-sealing gas conduits and / or reduced clogging from residue in accordance with the present disclosure. [Figure 5C] FIG. 5C is a cross-sectional side view of another example ESC having self-sealing gas conduits and / or reduced clogging from residue in accordance with the present disclosure. [Figure 5D]FIG. 5D is a cross-sectional side view of another example ESC having self-sealing gas conduits and / or reduced clogging from residue in accordance with the present disclosure. [Figure 6] FIG. 6 is a cross-sectional side view of another example ESC having self-sealing gas conduits and / or reduced clogging from residue in accordance with the present disclosure. [Figure 7] FIG. 7 is a cross-sectional side view of another example ESC having self-sealing gas conduits and / or reduced clogging from residue in accordance with the present disclosure.

[0025] [Figure 8] FIG. 8 is a flow chart illustrating an example of a method for making an ESC with self-sealing gas conduits and / or reduced clogging from residue in accordance with the present disclosure.

[0026] [Figure 9] FIG. 9 is a cross-sectional side view of another example ESC having self-sealing gas conduits and / or reduced clogging from residue in accordance with the present disclosure. [Figure 10] FIG. 10 is a cross-sectional side view of another example ESC having self-sealing gas conduits and / or reduced clogging from residue in accordance with the present disclosure.

[0027] [Figure 11] FIG. 11 is a flow chart illustrating another example method of making an ESC with self-sealing gas conduits and / or reduced clogging from residue in accordance with the present disclosure.

[0028] In the drawings, reference numbers may be reused to refer to similar and / or identical elements. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0029] An electrostatic chuck (ESC) according to the present disclosure includes a self-sealing gas conduit and / or reduces clogging from residue. The ESC includes a top plate including a first plug. The top plate is attached to a base plate including a cavity using a bonding material or a bonding material and a gasket. One or more spring members are disposed in the cavity. A second plug is disposed in the cavity on the one or more spring members. The second plug is biased against a bottom surface of the top plate by the one or more spring members.

[0030] The ESC with self-sealing gas conduits and / or reduced clogging by residues according to the present disclosure eliminates gaps between the bottom surface of the top plate and / or the first plug and the top surface of the second plug. In other words, the top plate and / or the first plug are in direct contact with the second plug. The ESC according to the present disclosure reduces the ability of reactive species to reach and erode the gasket and / or bonding material, thereby reducing residue generation. The location of the ESC also significantly reduces or eliminates clogging or substantially negates the adverse effects of clogging, allowing the ESC to continue to provide sufficient inert gas flow between the substrate and the top plate for the life of the ESC. More specifically, if clogging occurs, it is limited to areas that do not adversely affect the inert gas flow.

[0031] 1, an example of a substrate processing system 100 including an electrostatic chuck (ESC) according to the present disclosure is shown. Although the substrate processing system of FIG. 1 uses inductively coupled plasma (ICP), an ESC according to the present disclosure can be used with other types of substrate processing chambers, such as those using capacitively coupled plasma (CCP). The substrate processing system 100 includes an RF source 112 connected to a matching network 114 that is connected to a coil 116. The coil 116 may include a single coil, a pair of coils, an inner coil pair and an outer coil pair, and / or other coil arrangements.

[0032] In some examples, a gas plenum 120 may be disposed between the coil 116 and a dielectric window 124. The dielectric window 124 is disposed along one side of a processing chamber 128. The processing chamber 128 further includes an electrostatic chuck (ESC) 132 that supports a substrate 134. The ESC 132 includes self-sealing gas conduits and / or reduces clogging from residues, as described in more detail below.

[0033] During processing, a plasma 140 is generated inside the processing chamber 128. The plasma 140 etches the exposed surface of the substrate 134. An RF source 150 and a matching network 152 may be used to bias the ESC 132 during operation. A gas delivery system 156 may be used to supply a gas mixture to the processing chamber 128. The gas delivery system 156 may include a process gas source 157, a metering system 158, such as a valve and a mass flow controller (MFC), and a manifold 159. A gas delivery system 160 may be used to deliver a gas 162 to the gas plenum 120 via a valve 161. The gas may include a cooling gas used to cool the coil 116 and the dielectric window 124.

[0034] A heater controller 164 may be used to power resistive heaters (not shown) in the ESC 132 to control the temperature of the substrate during processing within a predetermined temperature range. The base plate of the ESC 132 may also include one or more cooling channels for receiving a cooling fluid (not shown). An exhaust system 165 includes valves 166 and pumps 167 for removing reactants from the process chamber 128 by purging or evacuation. The controller 154 may be used to control the etching process. The controller 154 monitors system parameters and controls the delivery of gas mixtures, striking, maintaining, and extinguishing the plasma, removing reactants, providing cooling gases, etc.

[0035] A gas delivery system 190 may be used to deliver gas 192 to the ESC 132 via valve 194. As described further below, the ESC 132 delivers gas to the backside of the substrate 134. The gas may include an inert gas that acts as a heat transfer medium between the top plate of the ESC 132 and the backside of the substrate 134.

[0036] 2, an ESC 200 is shown for illustration purposes that does not have self-sealing gas conduits or reduced clogging from residues. The ESC 200 includes a base plate 210 and a top plate 216. The top plate 216 is cylindrical and includes a first plug 218 located in situ at the center of the top plate 216. In some examples, the top plate 216 and the first plug 218 are made of ceramic, although other materials can be used. In some examples, the first plug 218 is also cylindrical, although other shapes can be used. In some examples, the top plate 216 includes an annular outer portion 219 made of a ceramic that is non-porous or less porous than the first plug 218, which is made of a porous ceramic to allow gas flow. During processing, a substrate 224 is placed on the top plate 216.

[0037] The top surface 228 of the first plug 218 is shown recessed relative to the top surface of the top plate 216. However, the first plug 218 can extend to the top surface of the top plate 216. The top surface of the top plate 216 may include a pattern of gas channels (not shown) for controlling the flow of inert gas beneath the substrate 224. The base plate 210 includes a cavity 230 that extends vertically downward from the top surface of the base plate 210. The cavity 230 is located beneath the top plate 216 and / or the first plug 218. In some examples, the cavity 230 is cylindrical. The ESC 200 includes a second plug 236 disposed within the cavity 230. In some examples, a bonding material 234, such as a polymer, may be used to bond an outer surface of the second plug 236 to an inner surface of the cavity 230.

[0038] In some examples, the second plug 236 is made of solid ceramic and includes vertically extending gas passage holes 242. In some examples, the base plate 210 is made of aluminum, although other materials can be used. In some examples, the inlet 240 and outlet 244 of the gas passage holes 242 are enlarged, angled, and / or chamfered relative to the diameter of the gas passage holes 242 as shown. In some examples, the bottom surface of the cavity 230 in the base plate 210 may further include a cavity 235 located below the inlet 240 of the second plug 236. Inert gas flows into the cavity 235, through the gas passage holes 242 in the second plug 236, through the holes in the first plug 218, and between the backside of the substrate 224 and the top surface of the top plate 216.

[0039] During assembly, the second plug 236 is inserted into the cavity 230 of the base plate 210 and attached to the inner surface of the cavity 230 using an adhesive 234. The top plate 216 is oriented to the base plate 210 and attached to the top surface of the base plate 210 using an adhesive 260. In some examples, a gasket 264 may be used to prevent the adhesive 260 from flowing or being forced into the cavity 230 of the base plate 210 prior to the adhesive 260 curing.

[0040] The top plate 216 is positioned with great precision relative to the base plate 210. In other words, the top plate 216 is precisely oriented relative to the base plate 210 to ensure a horizontal surface for processing the substrate 224 and prevent tilting. The bonding material 260 can have a variable height, thereby defining a predetermined non-zero gap between the top surface of the second plug 236 and the bottom surface 250 of the first plug 218, preventing the second plug 236 from affecting the position and orientation of the top plate 216 relative to the base plate 210.

[0041] As mentioned above, the top plate 216 of the ESC 200 includes the first plug 218, which is porous. The porous material of the first plug 218 helps reduce line of sight and break up the electric field lines. This approach helps prevent electrons from gaining enough energy from the electric field to cause ignition. However, the first plug 218 and other backside gas passages can become clogged over time. The predetermined non-zero gap used between the top surface of the second plug 236 and the bottom surface 250 of the first plug 218 provides a path for reactive species to reach the bonding materials 234 and 260 and / or gasket 264. Over time, the gas passages of the ESC 200 become clogged with residue, reducing or altering the flow of inert gas to the backside of the substrate, adversely affecting substrate cooling.

[0042] For example, the bonding materials 234 and 260 and / or gasket 264 erode (indicated by arrows 265) due to exposure to reactive species during processing. Residue (indicated by arrows 267) resulting from erosion of the bonding materials 234 and 260 and / or gasket 264 is drawn into and causes blockages in the pores of the first plug 218 and / or second plug 236. Reduced gas flow due to clogged pores in the first plug 218 adversely affects thermal uniformity across the substrate, reducing die yields and customer productivity, and increasing costs.

[0043] 3 and 4, an example of an ESC with improved gas flow and reduced clogging is shown. In FIG. 3, the ESC 300 includes a second plug 336 disposed within the cavity 230. The second plug 336 has a cylindrical body with a diameter larger than the diameter of the first plug 218.

[0044] One or more spring members 360 are located on a bottom surface of the cavity 230. In some examples, the one or more spring members 360 have an annular shape and are made of a polymer, metal, or other suitable material. This arrangement eliminates a gap between the second plug 336 and the top plate 216, as shown in FIG. 2. In some examples, no adhesive is used between the inner surface of the cavity 230 and the outer surface of the second plug 336, allowing for relative movement during assembly.

[0045] Once assembled, the top surface of the second plug 336 is in direct contact with the bottom surface of the first plug 218. As a result, potential clogging locations are moved radially outward away from the inert gas flow path. In some examples, the second plug 336 is made of non-porous ceramic and includes partial or complete gas passage holes 342. In some examples, the inlets 340 and outlets 344 of the gas passage holes 342 may be angled or chamfered relative to the diameter of the gas passage holes 342 as shown. Inert gas flows through the gas passage holes 342 of the second plug 336, through the holes in the first plug 218, and through between the backside of the substrate 224 and the top surface of the top plate 216. The top surface of the top plate 216 may include a pattern of gas channels (not shown) to direct the flow of inert gas beneath the substrate.

[0046] During assembly, one or more spring members 360 are placed in the cavity 230 of the base plate 210. The second plug 336 is inserted into the cavity 230 of the base plate 210 with its bottom surface in contact with the one or more spring members 360. The top plate 216 is attached to the top surface of the base plate 210 using a bonding material 260, which is allowed to harden. The top plate 216 biases the second plug 336 against the spring member(s) 360, bringing them into direct contact. In this manner, the non-zero predetermined gap of the ESC shown in FIG. 2 is eliminated.

[0047] As described above, the top plate 216 is positioned with great precision relative to the base plate 210 to prevent tilting. In other words, the top plate 216 is precisely oriented relative to the base plate 210 to ensure a horizontal surface for processing the substrate 224. During assembly, the top plate 216 biases the second plug 336 vertically downward against the spring member(s) 360, thereby correctly orienting the top plate 216 relative to the base plate 210. In other words, there is direct contact between the bottom surface of the top plate 216 and the second plug 336 (as opposed to the approach of FIG. 2). This arrangement can eliminate the predetermined gap shown in FIG. 2, reducing residue generation and clogging.

[0048] Direct contact (at 372) between the second plug 336 and the bottom surface of the top plate 216 prevents or significantly reduces exposure of the bonding material 260 and / or gasket 264 to reactive species. Furthermore, to the extent that some exposure still occurs, residue (if any) accumulates in other locations (e.g., along the outer edge 374 of the second plug). This type of clogging is self-sealing. In other words, residue generated in response to exposure to reactive species is drawn into the pores of the ceramic, causing a seal that prevents further residue generation and clogging. In effect, the ESC 300 has a self-sealing gas conduit.

[0049] In FIG. 4, another ESC 400 is shown, similar to ESC 300, except that second plug 410 is made of porous ceramic, rather than non-porous ceramic as in FIG. 3. The direct contact (at 372) between second plug 410 and the bottom surface of top plate 216 prevents or significantly reduces exposure of bonding material 260 and / or gasket 264 to reactive species. Furthermore, to the extent that some exposure still occurs, residue (if any) will accumulate in other locations (e.g., along outer edge 374 of second plug 410), causing clogging that would prevent further residue generation and clogging. In effect, ESC 400 has a self-sealing gas conduit. In this example, inlet 240 and / or outlet 244 are not chamfered or widened relative to gas passage holes 242.

[0050] 5A-5D, other variations of the ESC can be used. In FIG. 5A, the ESC 500 is shown as including a cylindrical second plug 510. The second plug 510 rests on the spring member(s) 360 in the cavity 230 as described above. The second plug 510 includes an upper surface that is biased against the bottom surface of the top plate 216 by the spring member(s) 360. In this example, the second plug 510 is made of porous ceramic and does not include gas passage holes. Also, the ESC 500 does not include a gasket. As shown, the bonding material 260 may flow partially downward before curing and into the gap between the outer surface of the second plug 510 and the vertical surface of the cavity 230. In FIG. 5B, the ESC 520 includes a gasket 264. The gasket 264 is used to contain the bonding material 260 as described above.

[0051] In Figures 5C and 5D, the second plug can include gas passage holes of varying length relative to the height of the second plug. In Figure 5C, the ESC 530 includes a second plug 532 made of porous ceramic and includes gas passage holes 534 that extend partially from a bottom surface 536 of the second plug 532 to a top surface 538 of the second plug 532. In Figure 5D, the ESC 540 includes a second plug 542 made of porous ceramic and includes gas passage holes 544 that extend from a bottom surface 546 of the second plug 542 to a top surface 548 of the second plug 542.

[0052] The direct contact (at 372) between the second plugs 510, 532, and 542 and the bottom surface of the top plate 216 prevents or significantly reduces exposure of the bonding material 260 and / or gasket 264 to reactive species. Furthermore, to the extent that some exposure still occurs, residue (if any) will accumulate in other locations (e.g., along the outer edges 374 of the second plugs 510, 532, and 542) causing clogging that would prevent further residue generation and clogging. In effect, the ESCs 500, 520, 530, and 540 have self-sealing gas conduits. Furthermore, because the bonding material 234 of FIG. 2 is eliminated, there is no potential for residue generation.

[0053] 6, the ESC 600 includes a second plug 610. The second plug 610 has a cylindrical body having a radially outer portion 612 and a radially inner portion 614. In some examples, the radially outer portion 612 is made of a non-porous ceramic and the radially inner portion 614 is made of a porous ceramic. In some examples, the radially inner portion 614 includes an in-situ porous ceramic. In other examples, the radially inner portion 614 is bonded to the inside of the radially outer portion 612. The radially outer surface of the second plug 610 includes an annular cavity 618 for receiving the bonding material 260 during assembly. Although the annular cavity 618 is illustrated in a particular location, the annular cavity 618 can be located in other locations, such as immediately adjacent to a top surface of the second plug 610, or in other locations (e.g., near a top surface of the base plate 210). In some examples, one or more spring members 360 are located below the radially outer portion 612. The radially inner portion 614 may not include any gas passage holes, with gas flowing through holes embedded therein, or partial gas passage holes or gas passage holes that extend vertically through the entire length of the second plug 610 may be used.

[0054] 7, the ESC 700 includes a second plug 710 and a sleeve 714 positioned around an outer surface of the second plug 710. In some examples, a gap is formed between the two. The sleeve 714 and the second plug 710 are supported separately and can move independently. In some examples, the sleeve 714 is made of a non-porous ceramic and the second plug 710 is made of a porous ceramic. In some examples, the radially outer surface of the sleeve 714 includes an annular cavity 718 thereon for receiving the bonding material 260 during assembly. In some examples, the spring member(s) 360-1 are positioned below the second plug 710 and the spring member(s) 360-2 are positioned below the sleeve 714. The radially inner portion 614 includes no gas passage holes, partial gas passage holes, or complete gas passage holes.

[0055] 8, a method 800 for making an ESC includes, at 810, providing a base plate having a cavity. At 814, one or more spring members are disposed on a bottom surface of the cavity. At 818, a second plug is disposed in the cavity over the one or more spring members. If a ceramic sleeve is used, the ceramic sleeve is disposed around the second plug or the ceramic sleeve is inserted first and then the second plug is inserted into the ceramic sleeve.

[0056] At 822, a bonding compound is applied to the top surface of the base plate (or a gasket is placed on the base plate and a bonding compound is applied). At 826, the top plate is placed on the bonding compound and / or gasket. The bottom surface of the top plate is in direct contact with the top surface of the second plug. At 830, the outer edges of the top plate and base plate are aligned to set a predetermined vertical gap between the radially outer edges of the top plate and base plate. At 834, the bonding compound is cured.

[0057] An ESC with self-sealing gas conduits according to the present disclosure significantly reduces or eliminates clogging. If clogging occurs, it occurs at a location that does not significantly affect the gas flow and / or the function of the ESC. In some examples described herein, the clogging seals gaps or holes so that further clogging does not significantly affect the gas flow.

[0058] In some instances, the top surface of the second plug directly contacts the bottom surface of the top plate (of the first plug). The ESC of the present disclosure reduces the gap that was previously used (and where clogging typically occurred). The ESC of the present disclosure provides a longer path for reactive species to reach and react with the joining material and / or gasket. Therefore, less clogging residue is generated during use.

[0059] In some examples, the second plug may be made of a porous ceramic (with or without gas passage holes). In some examples, the second plug and / or sleeve includes an annular cavity or other feature that acts as a dam to control overflow of the viscous bonding material during the ESC bonding process, thereby eliminating the need for a gasket.

[0060] In some examples, the second plug is made of a porous ceramic plug and includes no gas passage holes, partial gas passage holes, or gas passage holes that extend through the second plug. In some examples, the second plug has a larger diameter than the first plug. As a result, the location of clogging residue (if any) is limited to the outer periphery of the second plug and does not impede gas flow.

[0061] 9-10, a second plug may also be used having a gap between its top surface and the bottom surface of the top plate. The base plate has concentric upper and lower cavities. A sleeve is disposed on one or more spring members around the second plug. The top surface of the sleeve is biased against the bottom surface of the top plate by one or more spring members. The second plug may be made of a porous or non-porous ceramic, although other suitable materials may be used.

[0062] 9, the ESC 900 includes a second plug 902 that includes gas passage holes 904. The inlets 908 and outlets 906 of the gas passage holes 904 may be angled or chamfered relative to the diameter of the gas passage holes 904 as shown, or straight gas passage holes can be used. In this example, the second plug 902 is made from a non-porous material, such as a non-porous ceramic.

[0063] The base plate 210 defines a cavity including a first cavity portion 914 and a second cavity portion 916 located radially outward of the first cavity portion 914. The first cavity portion 914 includes a first annular surface 918 that is generally parallel to the substrate support surface. The second cavity portion 916 of the cavity includes a second annular surface 920 that is generally parallel to the substrate support surface.

[0064] In some examples, the first cavity portion 914 is shallower than the second cavity portion 916. In some examples, the second plug 902 can be bonded to the side of the second cavity portion 916 using a bonding material 922. In the example of FIG. 9, the first cavity portion 914 corresponds to the upper cavity, the second cavity portion 916 corresponds to the lower cavity (in addition to cavity 235), and cavities 235, 914, and 916 are concentric. In some examples, the bonding material 922 includes epoxy, although other types of bonding materials can be used. In other examples, the second plug 902 is not bonded to the side of the second cavity portion 916.

[0065] The sleeve 930 has an annular body and is positioned around the outer surface of the second plug 902. In some examples, the sleeve 930 is made of a porous material, such as a porous ceramic. In the example of FIG. 9, the second plug 902 is taller than the sleeve 930 and is bonded to a side of the second cavity portion 916. If the second plug 902 does not need to be bonded to the side 922, the first cavity portion 914 can have the same height as the second cavity portion 916 (similar to FIG. 7), with the first cavity portion 914 and the second cavity portion forming a single cavity (without an intervening surface to bond the second plug 902). Alternatively, the sleeve 930 can be taller than the second plug 902, and the first cavity portion 914 can be taller than the second cavity portion 916. In other words, the sleeve 930 can be vertically taller, the same height, or shorter than the second plug 902.

[0066] In some examples, one or more spring members 932 are located on the first annular surface 918. The one or more spring members 932 bias the sleeve 930 against the underside of the top plate 216 when the top plate 216 is attached to the base plate 210.

[0067] In some examples, the second plug 902 is in direct contact with the second annular surface 922. However, a gap 940 is formed between the top surface of the second plug 902 and the bottom surface of the top plate 216. The gap 940 is provided so that the second plug 902 does not affect the positioning of the top plate 216 with respect to the base plate 210 during assembly and / or so that relative movement between the second plug 902 and the bottom surface of the top plate 216 occurs without contact. In other words, this arrangement avoids potential particle generation due to direct contact between the second plug 902 and the bottom surface of the top plate 216. In some examples, the gap 940 is minimized and is as small as possible without adversely affecting the positioning of the top plate 216 with respect to the base plate 210 and / or allowing contact that would cause particle generation.

[0068] When active species reach the gasket 264 and / or bonding material 260 and generate residue, the residue tends to clog and seal the annular abutment surface at 960 between the upper surface of the sleeve 930 and the bottom surface of the top plate 216. Although the sleeve 930 and the bottom surface of the top plate 216 have an annular contact surface, the annular contact patch has a smaller surface area (compared to the circular contact patch between the second plug and the bottom surface of the top plate 216 in other examples), reducing the potential for particle generation.

[0069] 10, a similar arrangement is shown using a second plug 1004 made from a porous material, such as a porous ceramic. The second plug 1004 includes no gas passage holes, partial gas passage holes 1006 (as shown), or complete gas passage holes. As in FIG. 9, a sleeve 930 is disposed around the second plug 1004 and is biased into the bottom surface of the top plate 216 by one or more spring members 932.

[0070] 11, a method 1100 for making an ESC includes providing a base plate having a cavity at 1110. The cavity includes a first cavity portion including a first annular surface radially outward of a second annular surface of the second cavity portion. At 1112, a bonding material is applied to a sidewall of the second cavity portion and / or a sidewall of a second plug. Alternatively, step 1112 can be performed after 1118, and the bonding material can be injected after installation of the second plug.

[0071] At 1114, a second plug is inserted into the second cavity portion with its bottom surface resting on the second annular surface. At 1116, one or more spring members are placed on the first annular surface of the first cavity portion. At 1118, a sleeve is placed over the one or more spring members.

[0072] At 1122, an adhesive is applied to the top surface of the base plate (or a gasket is placed on the base plate and adhesive is applied). At 1126, a top plate is placed on the adhesive and / or gasket. The bottom surface of the top plate is in direct contact with the sleeve. At 1130, the outer edges of the top plate and base plate are aligned to set a predetermined vertical gap between the radially outer edges of the top plate and base plate. At 1134, the adhesive is cured.

[0073] The foregoing description is merely illustrative in nature and is not intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in various forms. Thus, although the disclosure includes specific examples, other variations will become apparent upon review of the drawings, specification, and the following claims, and should not be so limited as to limit the true scope of the disclosure. It should be understood that one or more steps in a method may be performed in different orders (or simultaneously) without altering the principles of the disclosure. Furthermore, although each embodiment is described above as having specific features, any one or more of those features described with respect to any embodiment of the disclosure can be implemented and / or combined with the features of any other embodiment, even if the combination is not expressly described. In other words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with each other remain within the scope of the disclosure.

[0074] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) are described using various terms such as "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "provided." Unless expressly described as "direct," when a relationship between a first and second element is described in the above disclosure, the relationship may be a direct relationship where there are no other intervening elements between the first and second elements, but may also be an indirect relationship where there are one or more intervening elements (spatially or functionally) between the first and second elements. As used herein, the phrase at least one of A, B, and C should be interpreted as meaning the logic (A OR B OR C) with a non-exclusive logical OR, and not as meaning "at least one of A, at least one of B, and at least one of C."

[0075] In some implementations, the controller is part of a system that may be part of the examples described above. Such systems may include semiconductor processing equipment such as one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics to control the operation of the system before, during, and after processing of the semiconductor wafer or substrate. The electronics may be referred to as a "controller" that may control various parts or sub-parts of one or more systems. The controller may be programmed to control any of the processes disclosed herein, such as delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, settings of radio frequency (RF) generators, settings of RF matching circuits, frequency settings, flow settings, fluid supply settings, position and operation settings, transport of wafers into and out of tools and other transport tools and / or load locks that connect or interface with the particular system, depending on the processing requirements and / or type of system.

[0076] Broadly speaking, a controller may be defined as electronic equipment having various integrated circuits, logic, memory, and / or software that, for example, receive instructions, issue instructions, control operations, enable cleaning operations, enable end-point measurements, and the like. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various personalizations (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. The operational parameters may, in some embodiments, be part of a recipe defined by a process engineer to accomplish one or more processing processes in the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0077] The controller may be part of or coupled to a computer that is integrated, coupled, or otherwise networked to the system, or a combination thereof, in some implementations. For example, the controller may be all or part of a host computer system in the "cloud" or in a fab that allows remote access of wafer processing. The computer may provide remote access to the system to monitor the current progress of a manufacturing operation, review the history of past manufacturing operations, review trends or performance metrics from multiple manufacturing operations, modify parameters of a current process, set processing steps following a current process, or initiate a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system over a network that may include a local network or the Internet. The remote computer may include a user interface that allows for input or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data that defines parameters for each processing step that is performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed or the type of tool that the controller is configured to interface with or control. Thus, as discussed above, the controller may be distributed, such as by including one or more separate controllers networked together and working toward a common purpose, such as the process and control described herein. An example of a controller distributed for such a purpose includes one or more integrated circuits on the chamber that are combined to control a process on the chamber and communicate with one or more integrated circuits located remotely (e.g., at the platform level or as part of a remote computer).

[0078] Without being limited thereto, exemplary systems may include a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing system that may be associated with or used in the production and / or manufacturing of semiconductor wafers.

[0079] As described above, depending on the process step or steps being performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool parts, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, other controllers, or one or more of the tools used in material transport to transport containers of wafers in and out of tool locations and / or load ports within a semiconductor manufacturing factory.

Claims

1. 1. An electrostatic chuck for a substrate, comprising: a base plate including a first surface and a cavity disposed on the first surface; a top plate including a first plug; one or more spring members including a first spring member disposed within the cavity; a second plug disposed between the top plate and the first spring member; a bonding material that attaches the top plate to the first surface of the base plate; 1. An electrostatic chuck comprising:

2. 2. The electrostatic chuck of claim 1, wherein the first spring member biases the second plug into direct contact with a second surface of the top plate, and the top plate, the first plug, and the second plug are made of ceramic.

3. 2. The electrostatic chuck of claim 1, further comprising a gasket disposed about the cavity between the top plate and the base plate, the bonding material being located radially outward of the gasket.

4. 2. The electrostatic chuck of claim 1, wherein the first plug is made of a porous ceramic and is formed in situ in the top plate.

5. 2. The electrostatic chuck of claim 1, wherein the second plug is made of a porous ceramic.

6. 2. The electrostatic chuck of claim 1, wherein the second plug has a diameter greater than a diameter of the first plug.

7. 2. The electrostatic chuck of claim 1, wherein the second plug includes an outer annular channel formed in a radially outer surface thereof for receiving the bonding material.

8. 2. The electrostatic chuck of claim 1, wherein the second plug is made of porous ceramic and does not include gas passage holes.

9. 2. The electrostatic chuck of claim 1, wherein the second plug is made of a porous ceramic and includes gas passage holes extending partially through the second plug.

10. 2. The electrostatic chuck of claim 1, wherein the second plug is made of a porous ceramic and includes gas passage holes extending through the second plug.

11. 2. The electrostatic chuck of claim 1, wherein the second plug comprises a cylindrical body having a radially outer portion made of non-porous ceramic and a radially inner portion made of porous ceramic.

12. 2. The electrostatic chuck of claim 1, further comprising a sleeve disposed between the second plug and a side of the cavity.

13. 13. The electrostatic chuck of claim 12, further comprising a second spring member disposed within the cavity to bias the sleeve against the top plate.

14. 13. The electrostatic chuck of claim 12, wherein the second plug is made of a porous ceramic.

15. 13. The electrostatic chuck of claim 12, wherein the sleeve is made of ceramic.

16. 1. A method of making an electrostatic chuck for a substrate, comprising: providing a base plate including a first surface and a cavity disposed on the first surface; providing a top plate including a first plug; disposing a first spring member within the cavity; disposing a second plug between the top plate and the first spring member; attaching the top plate to the first surface of the base plate using a bonding material; A method comprising:

17. 17. The method of claim 16, further comprising biasing the second plug into direct contact with a second surface of the top plate using the first spring member, wherein the top plate, the first plug, and the second plug are made of ceramic.

18. 17. The method of claim 16, further comprising placing a gasket around the cavity between the top plate and the base plate prior to applying the bonding material.

19. 17. The method of claim 16, further comprising forming the first plug in situ in the top plate, the first plug being made of a porous ceramic.

20. 17. The method of claim 16, wherein the second plug is made of a porous ceramic.

21. 17. The method of claim 16, wherein the second plug has a diameter greater than a diameter of the first plug.

22. 17. The method of claim 16, further comprising forming an annular channel on a radially outer surface of the second plug for receiving a bonding material.

23. 17. The method of claim 16, wherein the second plug is made of a porous ceramic and does not include gas passage holes.

24. 17. The method of claim 16, wherein the second plug is made of a porous ceramic and includes gas passage holes extending partially through the second plug.

25. 17. The method of claim 16, wherein the second plug is made of a porous ceramic and includes gas passage holes extending therethrough.

26. 17. The method of claim 16, wherein the second plug comprises a cylindrical body having a radially outer portion made of non-porous ceramic and a radially inner portion made of porous ceramic.

27. 17. The method of claim 16, further comprising disposing a sleeve between the second plug and a side of the cavity.

28. 28. The method of claim 27, further comprising biasing the sleeve against the top plate using a second spring member.

29. 28. The method of claim 27, wherein the second plug is made of a porous ceramic.

30. 28. The method of claim 27, wherein the sleeve is made of ceramic.

31. 1. An electrostatic chuck for a substrate, comprising: a base plate including a first surface and a cavity disposed on the first surface, a base plate, the cavity including a first cavity portion defining a first annular surface and a second cavity portion defining a second annular surface; a top plate including a first plug; a first spring member disposed on the first annular surface within the first cavity portion; a second plug disposed on the second annular surface between the top plate and the second annular surface; a sleeve disposed about the second plug and over the first spring member; a bonding material that attaches the top plate to the first surface of the base plate; 1. An electrostatic chuck comprising:

32. 32. The electrostatic chuck of claim 31, wherein the first spring member biases the top surface of the sleeve into direct contact with the bottom surface of the top plate.

33. 32. The electrostatic chuck of claim 31 further comprising a gasket disposed about the cavity between the top plate and the base plate, the bonding material being radially outward of the gasket.

34. 32. The electrostatic chuck of claim 31, wherein the first plug is made of a porous ceramic and is formed in situ in the top plate.

35. 32. The electrostatic chuck of claim 31, wherein the second plug has a diameter greater than a diameter of the first plug.

36. 32. The electrostatic chuck of claim 31, further comprising a bonding material for bonding the second plug to a sidewall of the second cavity portion.

37. 32. The electrostatic chuck of claim 31, wherein the second plug is made of a porous ceramic and does not include gas passage holes.

38. 32. The electrostatic chuck of claim 31, wherein the second plug is made of a porous ceramic and includes gas passage holes extending partially through the second plug.

39. 32. The electrostatic chuck of claim 31, wherein the second plug is made of a porous ceramic and includes gas passage holes extending through the second plug.

40. 32. The electrostatic chuck of claim 31, wherein the second plug is made of a non-porous ceramic and includes gas passage holes extending through the second plug.

41. 1. A method of making an electrostatic chuck for a substrate, the method comprising: providing a base plate including a first surface and a cavity disposed on the first surface, the cavity including a first cavity portion defining a first annular surface and a second cavity portion defining a second annular surface; providing a top plate including a first plug; disposing a first spring member on the first annular surface within the first cavity portion; disposing a second plug on the second annular surface between the top plate and the second annular surface; disposing a sleeve around the second plug and over the first spring member; bonding the top plate to the first surface of the base plate; A method comprising:

42. 42. The method of claim 41, further comprising biasing the sleeve into direct contact with a bottom surface of the top plate using the first spring member.

43. 43. The method of claim 42, wherein a gap is defined between a top surface of the second plug and the bottom surface of the top plate when the top plate is joined to the base plate.

44. 42. The method of claim 41, further comprising disposing a gasket around the cavity between the top plate and the base plate, a bonding material located radially outward of the gasket.

45. 42. The method of claim 41, wherein the first plug is made of a porous ceramic and is formed in situ in the top plate.

46. 42. The method of claim 41, wherein the second plug has a diameter greater than a diameter of the first plug.

47. 42. The method of claim 41, wherein the second plug is made of a porous ceramic and does not include gas passage holes.

48. 42. The method of claim 41, wherein the second plug is made of a porous ceramic and includes gas passage holes extending partially through or entirely through the second plug.

49. 42. The method of claim 41, wherein the second plug is made of a non-porous ceramic and includes gas passage holes extending therethrough.

50. 42. The method of claim 41, further comprising bonding the second plug to a sidewall of the second cavity portion.

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