Electrostatic end effectors for manufacturing system robots.

Abstract

Disclosed herein are embodiments of electrostatic end effectors and methods of manufacturing the same. In one embodiment, the electrostatic end effector comprises a ceramic base, a first electrode layer coupled to the ceramic base, and a second electrode layer coupled to the ceramic base. The electrostatic end effector is configured to generate an electrostatic force on a substrate in response to a voltage applied to the first electrode. The electrostatic force on the substrate can increase the frictional force on the substrate, which can enable the end effector to accelerate at a faster rate than current technology without the substrate slipping on the end effector.

Description

[Technical field]

[0001] SUMMARY OF THE DISCLOSURE Embodiments of the present disclosure relate generally to manufacturing methods and design parameters for electrostatic end effectors for semiconductor manufacturing system robots. [Background technology]

[0002] An electronic device manufacturing system may include one or more tools or components for transporting and manufacturing substrates. An electronic device manufacturing system may use a robotic device (e.g., a transfer chamber robot, a factory interface robot) to transfer substrates from one location to another. For example, a transfer chamber robot may be configured to transport substrates between a load lock and a processing chamber. The robotic device may have one or more end effectors that handle the substrates as they are transferred between locations.

[0003] Some current robot end effectors rely on static friction between the end effector and the substrate to enable the robot to transport the substrate on the end effector. Thus, the peak acceleration of the robot end effector is limited to about 0.1 G (one-tenth of the acceleration of gravity). If the end effector accelerates beyond the limits allowed by the static friction between the end effector and the substrate, the substrate may slip on the end effector, compromising the substrate placement and manufacturing process. Even slight substrate misalignment may chip particles off the substrate, leading to contamination. Thus, there is a need for an improved end effector to transport substrates with increased speed efficiency. Summary of the Invention

[0004] The following is a simplified summary of the disclosure to provide a basic understanding of some aspects of the disclosure. This summary is not an extensive overview of the disclosure. It is not intended to identify key or critical elements of the disclosure, nor is it intended to delineate the scope or claims of particular implementations of the disclosure. Its sole purpose is to present some concepts of the disclosure in a simplified form as a prelude to the more detailed description that is presented later.

[0005] In one aspect of the disclosure, an electrostatic end effector includes a ceramic base, a first electrode layer coupled to the ceramic base, and a second electrode layer coupled to the ceramic base, the electrostatic end effector configured to generate an electrostatic force on a substrate in response to a voltage applied to the first electrode.

[0006] In another aspect of the disclosure, a method of manufacturing an electrostatic end effector includes providing a ceramic blank. The method further includes performing a material removal process on the ceramic blank to generate one or more features on a top surface of the ceramic blank. The method further includes depositing a cathode layer on at least a top surface of the ceramic blank. The method further includes depositing a dielectric layer on at least the cathode layer. The method further includes depositing an anode layer on at least a portion of the dielectric layer.

[0007] In another aspect of the disclosure, a method of manufacturing an electrostatic end effector includes providing a plurality of ceramic sheets. The method further includes performing a lamination process to combine one or more electrode layers with the plurality of ceramic sheets to produce a set of laminate layers. The method further includes performing a sintering process to bond the laminate layers to produce a set of sintered layers. The method further includes grinding at least a top surface of the sintered layers. The method further includes polishing at least a top surface of the sintered layers.

[0008] The present disclosure is illustrated by way of example and not limitation in the figures of the accompanying drawings in which like references indicate like elements. It should be noted that various references to "an" or "one" embodiment in this disclosure do not necessarily refer to the same embodiment, but such references mean at least one. [Brief description of the drawings]

[0009] [Figure 1] 1 is a schematic top view of an example manufacturing system in accordance with certain embodiments; [Figure 2A] FIG. 1 is a schematic top view of a monopolar electrostatic end effector, in accordance with certain embodiments; [Figure 2B] 1 is a schematic cross-sectional view of at least a portion of a monopolar electrostatic end effector, in accordance with certain embodiments; [Diagram 3] FIG. 1 is a two-dimensional representation of one or more layers of a monopolar electrostatic end effector, according to certain embodiments. [Figure 4A] FIG. 1 is a schematic cross-sectional top view of a monopolar electrostatic end effector, in accordance with certain embodiments; [Figure 4B] FIG. 1 is a schematic bottom cross-sectional view of a monopolar electrostatic end effector, in accordance with certain embodiments; [Figure 4C] 1 is a schematic cross-sectional view of at least a portion of a monopolar electrostatic end effector, in accordance with certain embodiments; [Diagram 5] 1 is a flowchart of a method for manufacturing a monopolar electrostatic end effector, according to certain embodiments. [Figure 6] 1 is another flowchart of a method for manufacturing a monopolar electrostatic end effector, in accordance with certain embodiments. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Described herein is a technology directed to an electrostatic robot end effector configured to transfer a substrate in an electronic device manufacturing system. The electronic device manufacturing system can perform one or more processes on a substrate in one or more processing chambers. The electronic device manufacturing system can include a transfer chamber located proximate to one or more processing chambers. The transfer chamber can include a robot having one or more end effectors capable of positioning a substrate thereon while the substrate is transferred between the one or more processing chambers by the robot. Additionally, the electronic device manufacturing system can include a factory interface robot proximate to a factory interface. The factory interface robot can include a robot having one or more end effectors capable of positioning a substrate while the substrate is transferred from or to the factory interface. Existing robot end effectors rely on static friction between the end effector and the substrate to enable substrate transport, thus limiting the acceleration of the end effector. Accelerating the end effector beyond the static friction limit can cause misalignment of the substrate and contamination from chipped particles, which can cause the substrate to become defective and unusable.

[0011] Embodiments of the present disclosure are directed to electrostatic end effectors for semiconductor manufacturing system robots. In some embodiments, the robot end effectors described herein can include an anode and a cathode. The anode and cathode can be substantially coplanar. For example, the anode and cathode can be disposed in substantially the same plane. Additionally, the anode and cathode can be separated by one or more dielectric layers. Once a substrate is positioned on the end effector, a voltage can be applied to the cathode. The anode can be grounded. In some embodiments, the applied voltage can be unipolar, while in other embodiments it can be bipolar. The applied voltage can generate an electrostatic attractive force between the end effector and the substrate. The attractive force can increase static friction between the end effector and the substrate, allowing the end effector to accelerate at a faster rate than an end effector that relies solely on static friction while still transporting the substrate without the substrate slipping.

[0012] A first method of manufacturing a robotic end effector of the present disclosure can include providing a ceramic blank. In some embodiments, the ceramic blank is machined from stock. The ceramic blank can be machined from alumina (i.e., aluminum oxide), one or more other ceramic materials having suitable properties, or any combination thereof. The ceramic blank can have a flat top surface. The method can further include a material removal operation on at least the top surface of the ceramic blank at controlled locations. In some embodiments, the ceramic blank is microbead blasted. The material removal process can generate a plurality of pillars and valleys on the top surface of the end effector. The plurality of pillars can be small, substantially cylindrical protrusions that protrude from the top surface of the end effector. The plurality of pillars can be arranged in a pattern on the top surface of the end effector. In some embodiments, the plurality of pillars are arranged substantially in rows on the top surface of the end effector. The one or more valleys can be indentations in the top surface of the end effector. The one or more valleys can be longer than they are wide. In some embodiments, the one or more valleys separate one or more rows of pillars. Next, one or more layers may be deposited on at least the top surface of the end effector. In some embodiments, the one or more layers are deposited by a physical vapor deposition process (PVD). The first layer deposited on the top surface of the end effector may be a cathode layer. The second layer may be a dielectric layer. The third layer may be an anode layer. In some embodiments, the anode layer may be a ground layer. The anode layer may be deposited on at least the top of the pillar on the dielectric layer. In use, a substrate may be positioned on the anode layer on top of the pillar. In some embodiments, each of the one or more layers may be about 10 μm. However, a range of layer thicknesses may be used to construct the end effector in a manner that provides sufficient electrostatic attraction between the end effector and the substrate.

[0013] A second method of manufacturing an electrostatic end effector of the present disclosure can include first machining a plurality of ceramic sheets. In some embodiments, the ceramic sheets are manufactured from alumina. One or more electrode layers can be combined with the plurality of ceramic sheets using a lamination process. In some embodiments, the end effector includes a first electrode layer and a second electrode layer that are coplanar and electrically insulated from one another. In other embodiments, the end effector includes a first electrode layer disposed below a second electrode layer. The one or more electrode layers can be composed of a conductive material. For example, the one or more electrode layers can be platinum. The method can further include producing a set of sintered layers by performing a sintering process to bond the stacked layers into a rough end effector. The sintering process can include heating the stacked layers sufficiently so that the layers coalesce into a single mass. The method can further include grinding a top surface of the end effector to flatten said surface. The method can further include polishing the top surface of the end effector. In some embodiments, polishing can be performed by a lapping process. In some embodiments, the lapping process is a polishing process. For example, the lapping process can be accomplished by rubbing a tool surface against a top surface of an end effector with a fine abrasive therebetween. The lapping process can include using a fine abrasive on the top surface of the end effector to further planarize and polish the top surface of the end effector. In operation, a substrate can be positioned on the top surface of the end effector. A voltage can be applied to the second electrode layer while the first electrode layer is grounded. This can generate an electrostatic force between the end effector and the substrate, increasing the static friction between the substrate and the end effector.

[0014] In some embodiments, the second manufacturing method further includes a material removal operation performed on the top surface of the end effector. In some embodiments, the material removal operation is a micro-bead blasting process. The micro-bead blasting process can include applying a micro-abrasive to the top surface of the end effector at high pressure to remove material from a surface of the end effector. The micro-abrasive can be small glass beads. The material removal operation can generate a plurality of mesas on the top surface of the end effector. The plurality of mesas can be substantially cylindrical protrusions protruding from the top surface of the end effector. In some embodiments, the protruding electrodes can rise from the one or more mesas and extend down to the first bottom electrode layer. The one or more protruding electrodes can be electrically connected to the bottom electrode layer while being electrically insulated from the top electrode layer. The one or more protruding electrodes can be fabricated from a conductive material. For example, the one or more protruding electrodes can be fabricated from platinum. When the end effector is operating, a substrate can be positioned on the one or more protruding electrodes.

[0015] An end effector that applies an attractive force between the end effector and the substrate could increase the acceleration limit of the end effector without moving the substrate, thereby allowing for increased substrate transfer speeds and improving productivity of the manufacturing system.

[0016] 1 is a schematic top view of an example manufacturing system 100 according to an embodiment of the present disclosure. The manufacturing system 100 is capable of performing one or more processes on a substrate 102. The substrate 102 can be any suitable rigid, planar article of fixed dimensions, such as, for example, a silicon-containing disk or wafer, a patterned wafer, a glass plate, etc., suitable for the manufacture of electronic devices or circuit components thereon.

[0017] The manufacturing system 100 can include a processing tool 104 and a factory interface 106 coupled to the processing tool 104. The processing tool 104 can include a housing 108 having a transfer chamber 110 therein. The transfer chamber 110 can include one or more process chambers (also referred to as processing chambers) 114, 116, 118 disposed around and coupled thereto. The processing chambers 114, 116, 118 can be coupled to the transfer chamber 110 through respective ports, such as slit valves. The transfer chamber 110 can also include a transfer chamber robot 112 configured to transfer the substrate 102 between the processing chambers 114, 116, 118, the load lock 120, etc. The transfer chamber robot 112 can include one or more arms, each arm including one or more end effectors at the end of each arm. The end effectors can be configured to handle a particular object, such as a wafer.

[0018] The processing chambers 114, 116, 118 can be adapted to perform any number of processes on the substrate 102. The same or different substrate processes can be performed in each processing chamber 114, 116, 118. Substrate processes can include atomic layer deposition (ALD), physical vapor deposition (PVD), chemical vapor deposition (CVD), etching, annealing, curing, pre-cleaning, metal or metal oxide removal, and the like. Other processes can be performed on the substrate. The processing chambers 114, 116, 118 can each include one or more sensors configured to capture data of the substrate 102 before, after, or during substrate processing. For example, the one or more sensors can be configured to capture spectral and / or non-spectral data of a portion of the substrate 102 during substrate processing. In other or similar embodiments, the one or more sensors can be configured to capture data related to the environment within the process chambers 114, 116, 118 before, after, or during substrate processing. For example, the one or more sensors can be configured to capture data related to the temperature, pressure, gas concentrations, etc. of the environments within the processing chambers 114, 116, 118 during substrate processing.

[0019] The load lock 120 may also be coupled to the housing 108 and the transfer chamber 110. The load lock 120 may be configured to interface with the transfer chamber 110 on one side and with the factory interface 106 on the other side. The load lock 120 may have an environmentally controlled atmosphere that may be changed from a vacuum environment (substrates may be transferred to and from the transfer chamber 110) to an inert gas environment at or near atmospheric pressure (substrates may be transferred to and from the factory interface 106). The factory interface 106 may be any suitable enclosure, such as, for example, a front-end equipment module (EFEM). The factory interface 106 may be configured to receive substrates 102 from substrate carriers 122 (e.g., front-opening unified pods (FOUPs)) docked at various load ports 124 of the factory interface 106. A factory interface robot 126 (shown in dashed lines) can be configured to transfer substrates 302 between carriers (also called containers) 122 and the load locks 120. The carriers 122 can be substrate storage carriers or replacement part storage carriers.

[0020] The manufacturing system 100 may also be connected to client devices (not shown) configured to provide information regarding the manufacturing system 100 to a user (e.g., an operator). In some embodiments, the client devices may provide information to a user of the manufacturing system 100 via one or more graphical user interfaces (GUIs). For example, the client devices may provide information via the GUI regarding a target thickness profile of a film to be deposited on a surface of the substrate 102 during a deposition process performed in the processing chambers 114, 116, 118. The client devices may also provide information regarding modifications of a process recipe given a respective set of deposition settings that are predicted to correspond to the target profile according to embodiments described herein.

[0021] The manufacturing system 100 may also include a system controller 128. The system controller 128 may be and / or comprise a computing device such as a personal computer, a server computer, a programmable logic controller (PLC), a microcontroller, etc. The system controller 128 may include one or more processing devices, which may be a general-purpose processing device such as a microprocessor, a central processing unit, etc. More specifically, the processing device may be a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, or a processor implementing other instruction sets or a processor implementing a combination of instruction sets. The processing device may also be one or more special-purpose processing devices, such as an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal processor (DSP), a network processor, etc. The system controller 128 may include a data storage device (e.g., one or more disk drives and / or solid state drives), a main memory, a static memory, a network interface, and / or other components. The system controller 128 may execute instructions to perform any one or more of the methods and / or embodiments described herein. In some embodiments, the system controller 128 may execute instructions to perform one or more operations in the manufacturing system 100 according to a process recipe. The instructions may be stored in a computer-readable storage medium, which may include a main memory, a static memory, a secondary storage device, and / or a processing device during execution of the instructions.

[0022] The system controller 128 may receive data from sensors contained on or within various portions of the manufacturing system 100 (e.g., the processing chambers 114, 116, 118, the transfer chamber 110, the load lock 120, etc.). In some embodiments, the data received by the system controller 128 may include spectral and / or non-spectral data for a portion of the substrate 102. In other or similar embodiments, the data received by the system controller 128 may include data related to processing of the substrate 102 in the processing chambers 114, 116, 118, as previously described. For purposes of this description, the system controller 128 is described as receiving data from sensors contained within the processing chambers 114, 116, 118. However, the system controller 128 may receive data from any portion of the manufacturing system 100 and use the data received therefrom in accordance with embodiments described herein. In one illustrative example, the system controller 128 may receive data from one or more sensors in the processing chambers 114, 116, 118 before, after, or during substrate processing in the processing chambers 114, 116, 118. The data received from the sensors in various portions of the manufacturing system 100 may be stored in a data store 150. The data store 150 may be included as a component within the system controller 128 or may be a separate component from the system controller 128.

[0023] FIG 2A is a schematic top view of an end effector 200, in accordance with an embodiment of the present disclosure. The end effector 200 can include an end effector base 210, a robot connector 216, pillars 220, a cathode layer 230, a dielectric layer 240, and a ground layer 250. FIG 2A shows the layers of the end effector 200 superimposed on one another. The layers of the end effector 200 are shown separately in FIGs 3A-D. In some embodiments, the end effector 200 can include one or more sensors.

[0024] The end effector base 210 may include a ceramic material. In some embodiments, the end effector body 210 is an alumina ceramic. The end effector 200 may be attached to a robot via a robot connector 216 by one or more fasteners or other connectors. In some embodiments, the pillars 220 are disposed along one or more side edges of the end effector body 210. In some embodiments, the pillars 220 are disposed in a line substantially parallel to the longitudinal axis of the end effector base 210. In some embodiments, the pillars 220 rise about 20 μm from the surface of the end effector base 210. The pillars 220 may support a substrate that the end effector 200 is transferring or is about to transfer. In some embodiments, the end effector 200 includes more than 100 pillars 220. In some embodiments, the end effector 200 includes sufficient pillars such that bending of a substrate carried by the end effector 200 is minimized when an attractive force is applied between the end effector 200 and the substrate. The end effector base 210 can include one or more valleys 225 substantially between one or more rows of pillars 220. The one or more valleys 225 can be created by a material removal process. In some embodiments, the same process that creates the pillars 220 also creates the one or more valleys 225. The one or more valleys 225 can be created by a microbead blasting process. In some embodiments, the depth of the one or more valleys 225 of the end effector base 210 is about 40 μm.

[0025] One or more layers may be deposited on at least the top surface of the end effector 200. The one or more layers may be deposited by one or more deposition processes. In some embodiments, the one or more layers are deposited by a vapor deposition process. In a particular embodiment, the one or more layers are deposited by a PVD process. The cathode layer 230 and the ground layer 250 may be composed of a conductive material. The ground layer 250 may be an anode layer. In some embodiments, the cathode layer 230 and the ground layer 250 are titanium layers deposited by a PVD process. The cathode layer 230 may be applied to one or more valleys of the end effector base 210. The dielectric layer 240 may be deposited on the cathode layer 230 (see FIG. 2B). The dielectric layer 240 may include a dielectric. In some embodiments, the dielectric layer 240 is a layer of aluminum oxide (AlO). In some embodiments, the dielectric layer 240 may be deposited on the cathode layer 230 and the pillars 220 (see FIG. 2B). In some embodiments, a ground layer 250 is deposited on top of the dielectric layer 240. In some embodiments, the ground layer 250 is deposited on the top surface of each of the pillars 220 and also forms a conductive path.

[0026] 2B is a schematic cross-sectional view of at least a portion of a monopolar electrostatic end effector, according to a particular embodiment. The end effector base 210 can have one or more layers deposited on at least a top surface. In some embodiments, a cathode layer 230, a dielectric layer 240, and a ground layer 250 are deposited on the end effector base 210. The cathode layer 230, the dielectric layer 240, and the ground layer 250 may be disposed within an outer boundary of the end effector base 210 formed by an outer edge of the end effector base 210. The cathode layer 230 can be deposited in one or more valleys 225 of the end effector base 210. The dielectric layer 240 can be deposited on the cathode layer 230 and can extend up a sidewall of the valley 225 of the end effector base 210 and cover at least a surface of one or more pillars 220. The ground layer 250 may be deposited on the dielectric layer 240 when the dielectric layer 240 covers one or more pillars 220. The substrate 280 may be positioned on the ground layer 250. In some embodiments, the thickness of each of the cathode layer 230, the dielectric layer 240, and the ground layer 250 is about 10 μm. In other embodiments, the thickness of each of the cathode layer 230, the dielectric layer 240, and the ground layer 250 may be such that when a voltage is applied to the cathode layer 230, a desired resulting electrostatic attractive force is applied on the substrate 280. In some embodiments, there is a gap of about 60 μm between the upper surface of the dielectric layer 240 and the lower surface of the substrate 280. However, a smaller or larger gap may be present if an appropriate voltage is applied to the cathode layer 230 to generate the desired resulting electrostatic attractive force. In some embodiments, a gap may be necessary to avoid failure of the glow discharge in certain environments or pressure ranges. Additionally, the gap can be adjusted for a particular pressure range (e.g., smaller gap at one pressure, larger gap at a different pressure). In some embodiments, the gap is adjusted using piezoelectric actuators that vertically expand and / or contract the pillars.

[0027] In some embodiments, the end effector 200 may be used by a transfer chamber robot or a factory interface robot to transfer substrates in an electronic device manufacturing system (e.g., system 100). The substrate 280 may be transported by the end effector 200. While the end effector 200 is transporting the substrate 280, the substrate 280 may be positioned on the ground layer 250. A voltage may be applied to the cathode layer 230 and the ground layer 250 may be grounded, thus generating an electrostatic force between the end effector 200 and the substrate 280. In some embodiments, the voltage applied to the cathode layer 230 is about 500 volts, but the applied voltage may be any voltage necessary to generate the desired electrostatic force. The electrostatic force may act on the substrate 280 to reduce or eliminate slippage of the substrate 280 on the end effector 200 when the end effector 200 is under acceleration. This electrostatic force therefore allows for greater acceleration of the end effector 200 without causing the substrate 280 to slip.

[0028] 3A-D show top views of one or more layers of a monopolar electrostatic end effector, according to certain embodiments. In some embodiments, the end effector base 210 includes pillars 220 and one or more valleys 225 substantially between the pillars. A cathode layer 230 may be deposited on a top surface of the end effector base 210 within an outer boundary of the end effector base 210. A dielectric layer 240 may be deposited on at least the cathode layer 230 and on the top surface of the end effector base 210. A ground layer 250 may be deposited on at least the dielectric layer 240 and on the top surface of the end effector base 210. The ground layer 250 may be deposited on the pillars 220 and may create a conductive path between each of the pillars 220.

[0029] FIG. 4A is a schematic top cross-sectional view of a monopolar electrostatic end effector according to a particular embodiment. In some embodiments, the end effector 400 includes an end effector base 410. A plurality of mesas 420 may be distributed around a top surface of the end effector base 410. In some embodiments, the height of each of the mesas is about 10 μm. The end effector 400 may include one or more layers embedded between one or more stacked sheets. The one or more stacked sheets may be ceramic sheets. In some embodiments, the one or more embedded layers are coplanar. In other embodiments, the one or more layers are non-coplanar. In some embodiments, the one or more stacked sheets are sheets of alumina. The end effector 400 may include a cathode layer 430 between one or more stacked sheets disposed within an outer boundary of the end effector base 410 formed by an outer edge of the end effector base 410. The cathode layer 430 may include a conductive material. In some embodiments, the cathode layer 430 is a platinum layer. The end effector 400 may also include a ground layer 450 between one or more of the laminated sheets. The ground layer 450 may include a conductive material. In some embodiments, the ground layer 450 is a platinum layer. In one particular embodiment, the cathode layer 430 and the ground layer 450 are coplanar but electrically insulated from one another. In some embodiments, the cathode layer 430 and the ground layer 450 are on different planes within the end effector body 410.

[0030] 4B is a schematic bottom cross-sectional view of a monopolar electrostatic end effector, according to certain embodiments. The end effector 400 can include a ground layer 450. The ground layer 450 can be embedded between one or more ceramic sheets and disposed within the outer boundary of the end effector base 410. In some embodiments, the ground layer 450 includes one or more traces that run within the end effector base 410. In other embodiments, the ground layer 450 is disposed across substantially the entire footprint of the end effector base 410. In certain embodiments, the ground layer 450 connects one or more ground pins 460. In certain embodiments, the end effector 400 can have as few as three ground pins 460. In other embodiments, the end effector 400 has five ground pins 460. (See FIG. 4C for an explanation of the ground pins 460.)

[0031] 4C is a schematic cross-sectional view of at least a portion of a monopolar electrostatic end effector, in accordance with certain embodiments. In some embodiments, a ground layer 450 is disposed within the end effector base 410 below the cathode layer 430. The cathode layer 430 and the ground layer 450 are electrically insulated from each other.

[0032] The end effector 400 may include a plurality of mesas 420 on an upper surface of the end effector base 410. The ground pin 460 may include a mesa 420 and one or more ground prongs 452. Each ground prong 452 may include a conductive material. For example, in some embodiments, each ground prong 452 is platinum. The ground prongs 452 may rise above the upper surface of the mesa 420. In some embodiments, the ground prongs 452 may rise 2-3 μm above the upper surface of the mesa 420.

[0033] In some embodiments, the end effector 400 may be used by a transfer chamber robot or a factory interface robot to transfer a substrate in an electronic device manufacturing system. The substrate may be transported by the end effector 400. While the end effector 400 is transporting the substrate, the substrate is placed on one or more mesas 420. There may be a specific gap (e.g., 70 μm) between the bottom of the substrate and the cathode layer. The gap may be adjusted for a specific pressure. In some embodiments, the gap may be adjusted by vertically expanding and / or contracting the mesas 420 using a piezoelectric actuator. The substrate may be in electrical contact with one or more ground protrusions. A voltage may be applied to the cathode layer 430 and the ground layer 450 may be grounded, thus generating an electrostatic force between the end effector 400 and the substrate. In some embodiments, the voltage applied to the cathode layer 430 is 500 volts, but the applied voltage may be any voltage required to generate the desired electrostatic force. The electrostatic force can act on the substrate to reduce or eliminate slippage of the substrate on the end effector 400 when the end effector 400 is under acceleration conditions. The electrostatic force can thus allow for greater acceleration of the end effector 400 without the substrate slipping.

[0034] 5 is a flow chart of a method for manufacturing a monopolar electrostatic end effector, according to a particular embodiment. Method 500 is performed by processing logic, which may include hardware (circuitry, dedicated logic, etc.), software (such as running on a general-purpose computer system or dedicated machine), firmware, or some combination thereof. In one implementation, method 500 may be performed by a computer system or processing device not shown. In other or similar implementations, one or more operations of method 500 may be performed by one or more other machines not shown.

[0035] In operation 510, a ceramic blank is provided. In some embodiments, the ceramic blank is machined. In some embodiments, the ceramic blank has at least approximately the shape of the electrostatic end effector. In one particular embodiment, the ceramic blank is made of alumina.

[0036] In operation 520, the ceramic blank is subjected to a material removal process to create one or more features on a top surface of the ceramic blank. In some embodiments, the material removal process may include microbead blasting or any other suitable material removal process capable of creating top surface features on the ceramic blank. The material removal process removes a portion of the top surface of the ceramic blank such that the workpiece includes a plurality of pillars and one or more valleys on the top surface of the end effector.

[0037] In operation 530, a cathode layer is deposited on at least a top surface of the end effector by a deposition process. In some embodiments, the deposition process is a vapor deposition process. The cathode layer can be deposited on a surface of at least one or more valleys of the end effector.

[0038] In operation 540, a deposition process may deposit a dielectric layer over the top surface of the end effector. The dielectric layer may cover the cathode layer.

[0039] In operation 550, an anode layer is deposited on the end effector. The anode lay can cover a portion of the dielectric layer. In some embodiments, the anode layer is deposited on a plurality of pillars of the end effector.

[0040] 6 is a flow chart of another method of manufacturing a monopolar electrostatic end effector, according to a particular embodiment. Method 600 is performed by processing logic, which may include hardware (circuitry, dedicated logic, etc.), software (such as running on a general-purpose computer system or dedicated machine), firmware, or some combination thereof. In one implementation, method 600 may be performed by a computer system or processing device not shown. In other or similar implementations, one or more operations of method 600 may be performed by one or more other machines not shown.

[0041] In operation 610, a plurality of ceramic sheets are provided, each having the approximate contour of a finished end effector. In one particular embodiment, the ceramic sheets are sheets of alumina. In some embodiments, the ceramic sheets are machined from stock.

[0042] In operation 620, a lamination process is performed to combine one or more electrode layers with a plurality of ceramics to produce a set of laminate layers. The one or more electrode layers can include at least an anode layer and a cathode layer. In some embodiments, the cathode layer and the anode layer are coplanar. In other embodiments, the cathode layer and the anode layer are disposed one above the other or vice versa.

[0043] In operation 630, a sintering process is performed to bond the stacked layers together to produce a set of sintered layers. The sintering process may include exposing the stacked layers in an oven to a temperature high enough to coalesce the layers into a single mass.

[0044] In operation 640, a grinding operation may be performed on at least a top surface of the sintered end effector. The grinding operation may be accomplished using a coarse abrasive. The grinding operation may result in a top surface of the end effector that is substantially flat.

[0045] In operation 650, at least a top surface of the end effector may be polished by a polishing process, which may be accomplished using a fine abrasive. As a result of the polishing process, the end effector may have a polished, smooth top surface.

[0046] The foregoing description sets forth numerous specific details, such as examples of specific systems, components, methods, etc., to provide a thorough understanding of some embodiments of the present disclosure. It will be apparent to one of ordinary skill in the art that at least some embodiments of the present disclosure can be practiced without these specific details. In other instances, well-known components or methods have not been described in detail or have been presented in simple block diagram form to avoid unnecessarily obscuring the present disclosure. Thus, the specific details described are merely illustrative. A particular implementation may differ from these illustrative details and still be considered to be within the scope of the present disclosure.

[0047] References throughout this specification to "one embodiment" or "an embodiment" mean that a particular feature, structure, or characteristic described in connection with that embodiment is included in at least one embodiment. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification do not necessarily all refer to the same embodiment. In addition, the term "or" is intended to mean an inclusive "or" rather than an exclusive "or." When the term "about" or "approximately" is used herein, it is intended to mean that the nominal value presented is accurate to within ±10%.

Claims

1. 1. An electrostatic end effector, comprising: Ceramic base; a first electrode layer coupled to the ceramic base; and a second electrode layer coupled to the ceramic base, the electrostatic end effector configured to generate an electrostatic force on a substrate in response to a voltage applied to the first electrode; An electrostatic end effector comprising:

2. a plurality of pillars on an upper surface of the ceramic base configured to support the substrate; and a dielectric layer disposed between the first electrode layer and the second electrode layer, the dielectric layer electrically insulating the first electrode layer from the second electrode layer. The electrostatic end effector of claim 1 , further comprising:

3. The electrostatic end effector of claim 2 , further comprising a plurality of valleys between the plurality of pillars, the first electrode layer being deposited on at least one or more surfaces of the valleys.

4. The electrostatic end effector of claim 2 , wherein the first electrode layer and the second electrode layer comprise titanium layers deposited on the ceramic base by a physical vapor deposition process.

5. the dielectric layer is disposed substantially over the first electrode layer and the plurality of pillars; and the second electrode layer is deposited substantially over the dielectric layer; The electrostatic end effector of claim 2 .

6. The electrostatic end effector of claim 1 , wherein the ceramic base comprises a plurality of laminated sheets, the ceramic base electrically insulating the first electrode layer from the second electrode layer.

7. The electrostatic end effector of claim 6 , wherein the first electrode layer and the second electrode layer are embedded within the plurality of laminated sheets.

8. The electrostatic end effector of claim 6 , further comprising a plurality of mesas on an upper surface of the ceramic base, the plurality of mesas configured to support the substrate.

9. 9. The electrostatic end effector of claim 8, wherein the first electrode layer and the second electrode layer are platinum layers, the second electrode layer is disposed substantially below the first electrode layer, and the second electrode layer includes one or more protrusions extending through and projecting from one or more mesas.

10. 1. A method of manufacturing an electrostatic end effector, comprising: Providing a ceramic blank; performing a material removal process on the ceramic blank to generate one or more features on a top surface of the ceramic blank; depositing a cathode layer on at least a top surface of the ceramic blank; depositing a dielectric layer over at least the cathode layer; and depositing an anode layer over at least a portion of said dielectric layer; A method comprising:

11. The method of claim 10 , wherein the material removal process creates a plurality of pillars on the top surface of the ceramic blank, the plurality of pillars configured to support a substrate positioned on the pillars.

12. The method of claim 10 , wherein the material removal process creates a plurality of valleys on the top surface of the ceramic blank, and the cathode layer is deposited on a surface of one or more of the plurality of valleys.

13. The method of claim 10 , wherein the cathode layer and the anode layer comprise titanium layers deposited by a physical vapor deposition process.

14. the dielectric layer is disposed substantially over the first electrode layer and the plurality of pillars; and the anode layer is deposited on the dielectric layer substantially over the plurality of pillars; The method of claim 11.

15. The method of claim 10 , wherein at least one of the cathode layer, the dielectric layer, or the anode layer is deposited by a physical vapor deposition process.

16. 1. A method of manufacturing an electrostatic end effector, comprising: Providing a plurality of ceramic sheets; performing a lamination process to combine one or more electrode layers with the plurality of ceramic sheets to produce a set of laminate layers; performing a sintering process to bond the laminated layers together to produce a set of sintered layers; grinding at least the top surface of the sintered layer; and polishing at least the top surface of the sintered layer; A method comprising:

17. performing a material removal process to create a plurality of mesas on the top surface of the electrostatic end effector; 20. The method of claim 16, further comprising:

18. The method of claim 16 , wherein the one or more electrode layers are comprised of platinum.

19. The method of claim 16 , wherein the one or more electrode layers are coplanar.

20. 20. The method of claim 17, wherein the one or more electrode layers include a cathode layer and a ground layer, the ground layer disposed below the cathode layer, the ground layer having one or more protrusions extending through and projecting from one or more mesas.

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