Holding member

Abstract

To provide a holding member capable of reducing variations in physical properties of a resistor body formed inside.SOLUTION: A holding member 10 made of an insulating material includes: a main body portion 11 having a first surface 10A and a second surface 10B disposed on an opposite side of the first surface 10A; the inside of the main body portion 11 is divided into multiple zones 12 and formed with multiple resistor bodies 50; and an electrode part 60 arranged near the resistor bodies 50 in a first direction perpendicular to the first surface 10A. When a layered region extending parallel to the first surface 10A including the electrode part 60 and part of the insulator is set to an electrode area 70, and when the part of the electrode area 70 corresponding to one zone 12 is an electrode zone area 71, and when the electrode zone area 71 is divided into multiple areas and multiple divided areas 72 are set. When a ratio of an area of the electrode part 60 in one divided region 72 to an area of one divided region 72 when viewed from the first direction is defined as an electrode ratio, the electrode ratio of each of the multiple divided regions 72 falls within a predetermined range.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present disclosure relates to a retention member. [Background technology]

[0002] An electrostatic chuck described in Japanese Patent No. 6571880 (Patent Document 1 below) is known as a holding device for holding a wafer during semiconductor manufacturing. This electrostatic chuck includes a ceramic plate, a heating resistor provided inside the ceramic plate, and a heating resistor driver that constitutes a power supply path to the heating resistor. The upper surface of the ceramic plate is an attraction surface that attracts the wafer. The ceramic plate is divided into a plurality of segments in a direction parallel to the attraction surface. A heating resistor is disposed in each segment. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 6571880 Summary of the Invention [Problem to be solved by the invention]

[0004] In the above-mentioned holding device, when the heating resistor is disposed vertically adjacent to the layer on which the heating resistor driver is provided, the forming conditions of the heating resistor may be different between the portion of the heating resistor that overlaps with the heating resistor driver and the portion that does not overlap with the heating resistor driver (i.e., the portion that overlaps with the ceramic). The forming conditions here include, for example, the degree of shrinkage during firing and the state of volatilization of the organic solvent. As a result, the physical properties, such as resistivity, of one heating resistor in one segment may become non-uniform, which may cause temperature bias within one segment.

[0005] The present disclosure has been completed in light of the above-mentioned circumstances, and has an object to suppress variation in the physical properties of a resistor formed inside a holding member. [Means for solving the problem]

[0006] The holding member of the present disclosure comprises a main body portion made of an insulator and having a first surface and a second surface arranged opposite to the first surface, a plurality of resistors formed inside the main body portion and partitioned into a plurality of zones, and an electrode portion arranged near the resistor in a first direction perpendicular to the first surface, wherein when a layered region extending parallel to the first surface including the electrode portions and a portion of the insulator is defined as an electrode region, and a portion of the electrode region corresponding to one of the zones is defined as an electrode zone region, when the electrode zone region is divided into a plurality of divided regions and a plurality of divided regions are set, the electrode ratio is defined as the ratio of the area of ​​the electrode portions in one of the divided regions to the area of ​​one of the divided regions when viewed from the first direction, and the electrode ratio of each of the plurality of divided regions is within a predetermined range. Effect of the Invention

[0007] According to the present disclosure, it is possible to suppress variation in the physical properties of the resistor formed inside the holding member. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a perspective view illustrating an external configuration of an electrostatic chuck according to a first embodiment. [Diagram 2] FIG. 2 is a schematic cross-sectional view of the electrostatic chuck. [Diagram 3] FIG. 3 is a plan view of the electrode region. [Figure 4] FIG. 4 is a plan view of the electrode zone area. [Diagram 5] FIG. 5 is a schematic cross-sectional view of an electrostatic chuck according to the second embodiment. [Figure 6] FIG. 6 is a schematic cross-sectional view of an electrostatic chuck according to the third embodiment. [Figure 7] FIG. 7 is a schematic cross-sectional view of an electrostatic chuck according to the fourth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] [Description of the embodiments of the present disclosure] First, embodiments of the present disclosure will be listed and described. (1) The retaining member of the present disclosure comprises a main body portion constructed of an insulator and having a first surface and a second surface arranged opposite to the first surface, a plurality of resistors formed inside the main body portion and partitioned into a plurality of zones, and an electrode portion arranged near the resistor in a first direction perpendicular to the first surface, wherein an electrode region is a layered region extending parallel to the first surface including the electrode portions and a portion of the insulator, and an electrode zone region is a portion of the electrode region corresponding to one of the zones. When the electrode zone region is divided into a plurality of divided regions and a plurality of divided regions are set, the electrode ratio is defined as the ratio of the area of ​​the electrode portions in one of the divided regions to the area of ​​one of the divided regions when viewed from the first direction, and the electrode ratio of each of the plurality of divided regions is within a predetermined range.

[0010] With this configuration, the electrode ratio between the divided regions falls within a predetermined range, which makes it easier to standardize the formation conditions of the resistors within one zone, and therefore makes it easier to suppress the variation in physical properties, such as resistivity, among the resistors formed in each zone.

[0011] (2) In the holding member described in (1), the electrode ratio may be 90% or less.

[0012] (3) In the holding member described in (1) or (2), it is preferable that the electrode portion is a driver electrically connected to the resistor.

[0013] According to this configuration, by arranging the resistor drivers close to each other in the first direction, it becomes easier to reduce the size of the holding member in the first direction.

[0014] (4) In the holding member described in any one of (1) to (3), it is preferable that the electrode portion comprises a first electrode portion arranged on one side of the resistor in the first direction, and a second electrode portion arranged on the other side of the resistor in the first direction.

[0015] According to this configuration, the areas of the electrode portions can be adjusted on one side and the other side in the first direction, so that the electrode ratios between the divided regions can be made closer to each other more easily.

[0016] (5) The holding member described in any one of (1) to (4) may further include a high-frequency electrode formed inside the main body portion, and a high-frequency electrode driver formed inside the main body portion and electrically connected to the high-frequency electrode, and the high-frequency electrode driver may be arranged in the vicinity of the resistor in the first direction.

[0017] (6) In the holding member described in (5), it is preferable that the high-frequency electrode driver is included in the electrode portion.

[0018] With this configuration, a part of the conductive layer included in the electrode portion can be effectively used as a high-frequency electrode driver.

[0019] [Details of the First Embodiment of the Present Disclosure] A specific example of the first embodiment of the present disclosure will be described with reference to FIGS. 1 to 4. The present disclosure is not limited to these examples, but is intended to include all modifications within the scope of the claims and meaning equivalent thereto. In the following description, for multiple identical members, only some of the members may be labeled with a reference symbol, and the reference symbols for the other members may be omitted. In this specification, the configuration of the holding member and holding device will be described with the Z-axis positive direction as the upward direction, the Z-axis negative direction as the downward direction, and the XY plane direction as the horizontal direction, but the holding member and holding device may be arranged differently in the actual use mode. In this specification, "orthogonal" and "parallel" are also intended to include arrangements that are substantially recognized as orthogonal or parallel.

[0020] <Electrostatic chuck> A holding device including a holding member 10 according to the present disclosure is an electrostatic chuck 1 capable of attracting and holding an object such as a semiconductor wafer, a glass substrate, or the like (hereinafter referred to as a "wafer W") The electrostatic chuck 1 is attached to, for example, a processing chamber of a semiconductor manufacturing device (not shown), and is used to perform various processes (film formation, etching, etc.) on the wafer W using plasma.

[0021] 1, the electrostatic chuck 1 includes a holding member 10 and a base member 20. The holding member 10 and the base member 20 are joined by a joint 30. The joint 30 is formed of an adhesive such as a silicone resin, an acrylic resin, or an epoxy resin. The electrostatic chuck 1 is capable of attracting and holding the wafer W by electrostatic attraction.

[0022] The base member 20 is a disk-shaped member, and can be molded into a shape having, for example, a diameter of about 340 mm and a thickness of about 35 mm. The base member 20 is mainly made of a conductive material such as aluminum or an aluminum alloy. The "mainly made material" here refers to the main component, and means the material with the highest content ratio (weight ratio) (the same applies below). As shown in FIG. 2, the upper surface 20A of the base member 20 is disposed on the holding member 10 side. The upper surface 20A of the base member 20 is joined to a second surface 10B of the holding member 10, which will be described later, by a joint 30.

[0023] A coolant flow path 21 is provided inside the base member 20. The coolant flow path 21 is connected to a coolant circulation device (not shown). The coolant circulation device is configured to be able to circulate a coolant such as a fluorine-based inert liquid or water through the coolant flow path 21. When a coolant flows through the coolant flow path 21, the base member 20 is cooled, and the holding member 10 is cooled by heat transfer (heat withdrawal) between the base member 20 and the holding member 10 via the joint 30, and the wafer W held by a first surface 10A of the holding member 10 (described later) is cooled. This allows the temperature of the wafer W to be controlled.

[0024] <Retaining material> The holding member 10 is generally disk-shaped and can be molded into a shape having, for example, a diameter of about 300 mm and a thickness of about 5 mm. The holding member 10 includes a main body 11 made of an insulator, a chuck electrode 40 formed inside the main body 11, a plurality of resistors 50, and an electrode portion 60. The main body 11 is mainly made of a material such as ceramics, such as aluminum nitride (AlN) or alumina (Al2O3). The upper surface of the main body 11 is a first surface 10A. The first surface 10A is perpendicular to the Z-axis direction (an example of a first direction). The first surface 10A is a circular flat surface and functions as a surface for holding the wafer W. A second surface 10B disposed on the opposite side of the main body 11 to the first surface 10A is joined to the base member 20 via a joining portion 30.

[0025] The chuck electrode 40 is made of a conductive material (e.g., tungsten, molybdenum, platinum, etc.). The shape of the chuck electrode 40 as viewed in the Z-axis direction is, for example, substantially circular. When a voltage is applied to the chuck electrode 40 from a power source (not shown), an electrostatic force is generated, and the wafer W is attracted and fixed to the first surface 10A of the holding member 10 by this electrostatic force.

[0026] <Resistor> The multiple resistors 50 are made of a conductive material (e.g., tungsten, molybdenum, platinum, etc.). The main body 11 is divided into multiple zones 12 when viewed in the Z-axis direction, and one resistor 50 is arranged in each zone 12. The outer peripheral edge of the main body 11 arranged outside the multiple zones 12 is a non-forming zone 13 where no resistor 50 is arranged. The resistor 50 is shaped so as to pass through each position in each zone 12 as evenly as possible when viewed in the Z-axis direction. The resistor 50 is in the form of a thin wire and is formed to meander in each zone 12. The resistor 50 is, for example, a heater or a resistance temperature detector for measuring temperature.

[0027] <Electrode part> The electrode portion 60 is made of a conductive material (e.g., tungsten, molybdenum, platinum, etc.). The electrode portion 60 is disposed near the resistor 50 in the Z-axis direction. In detail, the electrode portion 60 is disposed at a position closest to the resistor 50 among the conductive layers disposed above and below the resistor 50, excluding the vias 51 etc. directly connected to the resistor 50. More specifically, the electrode portion 60 is a conductive layer disposed at a position about 0.2 to 0.8 mm away from the resistor 50 in the Z-axis direction. In this embodiment, the electrode portion 60 is located below the resistor 50.

[0028] The electrode unit 60 in this embodiment is a driver electrically connected to the resistor 50. One end of the electrode unit 60 is connected to a pad provided at an end of the resistor 50 through a via 51. The other end of the electrode unit 60 is connected to the terminal 14 through a via 61. The terminal 14 is accommodated in a terminal hole 22 provided in the electrostatic chuck 1. The terminal hole 22 is formed to extend in the Z-axis direction from the lower surface 20B of the base member 20 to the inside of the holding member 10. The terminal 14 is connected to a power source (not shown).

[0029] The holding member 10 can be produced by preparing multiple green sheets made of ceramics, processing certain green sheets by forming via holes, filling with metallization paste, printing, etc., thermocompressing these green sheets, cutting, etc., and then firing them.

[0030] <Electrode area, electrode zone area, division area> Here, a layered region that includes the electrode portion 60 and a part of the insulator and extends parallel to the first surface 10A is defined as an electrode region 70. In addition, as shown in FIG. 3, a portion of the electrode region 70 that corresponds to one zone 12 is defined as an electrode zone region 71.

[0031] <Split area> Furthermore, as shown in FIG. 4, the electrode zone region 71 is divided into a plurality of regions, which are defined as divided regions 72. In FIG. 4, the electrode zone region 71 located at the upper left of FIG. 3 is divided into four regions. When dividing the electrode zone region 71 into a plurality of regions, the division in the radial direction (concentric circles) is performed with priority. It is preferable to suppress the variation in the electrode zone region 71 on the circumference. Furthermore, it is preferable that the divided regions 72 are set so that the areas of the divided regions 72 as viewed in the Z-axis direction are approximately the same. It is preferable that the area of ​​each divided region 72 is divided equally into 2 to 50% of the area of ​​the electrode zone region 71. It is also preferable that the divided regions 72 are arranged substantially symmetrically to each other in the horizontal direction.

[0032] <Electrode ratio> Here, the ratio of the area of ​​the electrode portion 60 in one divided region 72 to the area of ​​one divided region 72 as viewed in the Z-axis direction is defined as the electrode ratio. In other words, the electrode ratio is the ratio of the portion of one divided region 72 partitioned by the two-dot chain line in FIG. 4 that is occupied by the electrode portion 60 shown by hatching. The electrode ratio of each of the multiple divided regions 72 is configured to fall within a predetermined range. For example, the predetermined range is preferably 30% or less, and more preferably 20% or less. For example, if the four divided regions 72 are distinguished as 72A, 72B, 72C, and 72D in FIG. 4, the electrode ratios of the divided regions 72A, 72B, 72C, and 72D are 62.5%, 72.9%, 64.5%, and 72.1%, respectively, which fall within the range of 20%. Although not described in detail, the electrode zone regions 71 other than the electrode zone region 71 shown in FIG. 4 are also configured to fall within a predetermined range.

[0033] The resistor 50 includes an overlapping portion that is arranged overlapping with the electrode portion 60 in the Z-axis direction, and a non-overlapping portion that is arranged overlapping with the insulator (main body portion 11) in the Z-axis direction. The resistor 50 is arranged as evenly as possible in each zone 12, so that the ratio of the overlapping portion to the resistor 50 in the portion of the zone 12 corresponding to each divided region 72 is considered to be substantially equal to the electrode ratio. In this embodiment, since the electrode ratios of the multiple divided regions 72 are within a predetermined range, the ratio of the overlapping portion of the resistor 50 in the portion of the zone 12 corresponding to each divided region 72 is within a predetermined range.

[0034] When firing the green sheet laminate in the manufacturing process of the holding member 10, it is considered that the forming conditions of the resistor 50 may be different between the portion of the printed layer of the metallization paste that becomes the resistor 50 overlapping in the Z-axis direction with the metallization paste printed layer that becomes the electrode portion 60 and the portion that overlaps in the Z-axis direction with the portion that becomes the insulator. The forming conditions include, for example, the degree of contraction of the metallization paste and the state of volatilization of the organic solvent in the metallization paste.

[0035] In this embodiment, in the portion of the zone 12 corresponding to each divided region 72, the ratio of the overlapping portion of the resistor 50 falls within a predetermined range, so that it is easy to make the formation conditions approximately the same at each position in the zone 12. Therefore, the physical property values ​​of the resistor 50, such as the resistivity, are less likely to vary within the zone 12. As a result, the functionality of the resistor 50 in the holding member 10 can be improved. For example, when the resistor 50 is a heater, the temperature distribution within each zone 12 can be reduced. For example, when the resistor 50 is a resistance temperature detector, the accuracy of temperature measurement within each zone 12 can be improved.

[0036] On the other hand, unlike the present embodiment, if the electrode ratio of the divided regions is not within a predetermined range, multiple regions with different resistor formation conditions may be generated in one zone, and the physical properties of the resistor may vary among the multiple regions. Therefore, the functionality of the resistor may not be fully exhibited.

[0037] The electrode ratio may be 90% or less. The average electrode ratio may be different between different electrode zone regions 71. For example, the average electrode ratio of the electrode zone region 71 shown in Fig. 4 is 68.0%, but the average electrode ratio of the other electrode zone regions 71 does not have to be 68.0%.

[0038] <Effects of the First Embodiment> As described above, the holding member 10 of embodiment 1 comprises a main body 11 made of an insulator and having a first surface 10A and a second surface 10B arranged on the opposite side of the first surface 10A, a plurality of resistors 50 formed inside the main body 11 and partitioned into a plurality of zones 12, and an electrode portion 60 arranged near the resistor 50 in a first direction (Z-axis direction) perpendicular to the first surface 10A. When a layered region including the electrode portion 60 and a portion of the insulator and extending parallel to the first surface 10A is defined as an electrode region 70, and a portion of the electrode region 70 corresponding to one of the zones 12 is defined as an electrode zone region 71, when the electrode zone region 71 is divided into a plurality of divided regions 72 and a plurality of divided regions 72 is set, the electrode ratio is defined as the ratio of the area of ​​the electrode portion 60 in one divided region 72 to the area of ​​one divided region 72 when viewed from the first direction, and the electrode ratio of each of the plurality of divided regions 72 falls within a predetermined range.

[0039] With this configuration, the electrode ratio falls within a predetermined range between the divided regions 72, which makes it easier to uniformize the formation conditions of the resistor 50 within one zone 12. Therefore, it becomes easier to suppress the variation in physical properties, such as resistivity, within one resistor 50 formed in each zone 12.

[0040] In the first embodiment, the electrode rate may be 90% or less.

[0041] In the first embodiment, the electrode section 60 is a driver that is electrically connected to the resistor 50 .

[0042] According to this configuration, by arranging the drivers of the resistors 50 close to each other in the first direction, it becomes easier to reduce the size of the holding member 10 in the first direction.

[0043] [Details of the second embodiment of the present disclosure] A specific example of the second embodiment of the present disclosure will be described with reference to Fig. 5. Configurations similar to those of the first embodiment are given the same reference numerals as those of the first embodiment, and descriptions thereof may be omitted.

[0044] The electrostatic chuck 101 of the second embodiment includes a holding member 110. The electrode portion 160 of the holding member 110 includes a first electrode portion 160A disposed above the resistor 50 and a second electrode portion 160B disposed below the resistor 50. According to the present embodiment, the electrode portion 160 has two conductive layers, and therefore the design freedom of the electrode portion 160 is improved compared to the first embodiment. This makes it easier to appropriately adjust the electrode ratio.

[0045] The first electrode portion 160A and the second electrode portion 160B may be arranged so as not to overlap each other in the Z-axis direction. With this configuration, the resistor 50 overlaps with the first electrode portion 160A or the second electrode portion 160B only on one side in the Z-axis direction, and is not sandwiched between the electrode portions 160 from both sides in the Z-axis direction. This allows the electrode ratio to be calculated in a manner substantially similar to that of the first embodiment, and reduces variations in the formation conditions due to the position of the resistor 50.

[0046] The first electrode portion 160A and the second electrode portion 160B may have portions that overlap with each other in the Z-axis direction. However, the forming conditions of the resistor 50 may be different between a portion of the resistor 50 that is sandwiched between the electrode portions 160 from both sides in the Z-axis direction and a portion that overlaps with the electrode portion 160 only on one side in the Z-axis direction. Therefore, in this case, it is preferable that the electrode ratios of the portions where the first electrode portion 160A and the second electrode portion 160B overlap in each divided region 72 are approximately the same.

[0047] <Effects of the second embodiment> In the holding member 110 of embodiment 2, the electrode portion 160 includes a first electrode portion 160A arranged on one side (upper) of the resistor 50 in the first direction, and a second electrode portion 160B arranged on the other side (lower) of the resistor 50 in the first direction.

[0048] According to such a configuration, the area of ​​the electrode portion 160 can be adjusted on one side and the other side in the first direction, so that the electrode ratios between the divided regions 72 can be made closer to each other even more easily.

[0049] [Details of the Third Embodiment of the Present Disclosure] A specific example of the third embodiment of the present disclosure will be described with reference to Fig. 6. Configurations similar to those of the first embodiment are given the same reference numerals as those of the first embodiment, and descriptions thereof may be omitted.

[0050] The electrostatic chuck 201 of the third embodiment includes a holding member 210 and a base member 220. The holding member 210 includes a high-frequency electrode 280 formed inside the main body 11 and a high-frequency electrode driver 290.

[0051] <High frequency electrodes> The high-frequency electrode 280 is disposed at a distance from the chuck electrode 40 in the up-down direction. In this embodiment, the high-frequency electrode 280 is disposed below the chuck electrode 40. The high-frequency electrode 280 is formed of a conductive material (e.g., tungsten, molybdenum, platinum, etc.). The high-frequency electrode 280 does not have to be partitioned into a plurality of zones as viewed in the Z-axis direction. The shape of the high-frequency electrode 280 as viewed in the Z-axis direction may be, for example, substantially circular or spiral. The high-frequency electrode 280 is electrically connected to a high-frequency power source (not shown).

[0052] The high-frequency electrode 280 is used for various purposes depending on the frequency of the high-frequency power supply. For example, when the frequency of the high-frequency power supply is several tens to several hundreds of MHz, the high-frequency electrode 280 can be used for the purpose of generating plasma. For example, when the frequency of the high-frequency power supply is several hundreds of kHz, the high-frequency electrode 280 can be used for the purpose of attracting ions, etc., to the wafer W held by the holding member 210.

[0053] <High frequency electrode driver> The high-frequency electrode driver 290 is a driver electrically connected to the high-frequency electrode 280. The high-frequency electrode driver 290 and the high-frequency electrode 280 are connected through a via 291. The high-frequency electrode driver 290 is also connected to a terminal 215 through a via 292. The terminal 215 is accommodated in a terminal hole 223 provided in the electrostatic chuck 201. The terminal hole 223 is formed to extend in the Z-axis direction from the lower surface 20B of the base member 220 to the inside of the holding member 210. The terminal 215 is connected to a high-frequency power source (not shown).

[0054] The high-frequency electrode driver 290 is disposed near the resistor 50 in the Z-axis direction. In particular, the high-frequency electrode driver 290 is disposed at a position approximately 0.2 to 0.8 mm away from the resistor 50 in the Z-axis direction. In this embodiment, the high-frequency electrode driver 290 is located above the resistor 50. The high-frequency electrode driver 290 of this embodiment does not need to be included in the electrode unit 60. In other words, the high-frequency electrode driver 290 may be a conductive layer that is not taken into account in calculating the electrode ratio.

[0055] The effects of the third embodiment are similar to those of the first embodiment, and therefore a description thereof will be omitted.

[0056] [Details of the fourth embodiment of the present disclosure] A specific example of the fourth embodiment of the present disclosure will be described with reference to Fig. 7. Configurations similar to those of the first embodiment are given the same reference numerals as those of the first embodiment, and descriptions thereof may be omitted.

[0057] The electrostatic chuck 301 of the fourth embodiment includes a holding member 310 and a base member 220. The holding member 310 includes a high-frequency electrode 280 and a high-frequency electrode driver 390 formed inside the main body 11. The holding member 310 of the fourth embodiment includes an electrode unit 360. The electrode unit 360 includes a resistor driver 362 and a high-frequency electrode driver 390.

[0058] The resistor driver 362 is connected to the resistor 50 through a via 51. The resistor driver 362 is also connected to the terminal 14 through a via 61. The resistor driver 362 is a conductive layer corresponding to the electrode portion 60 of the first embodiment. The electrode region 370 of the fourth embodiment is configured to include a high-frequency electrode driver 390, a resistor driver 362, and a part of an insulator.

[0059] The high-frequency electrode driver 390 has a configuration similar to that of the high-frequency electrode driver 290 of the third embodiment, except that it is included in the electrode section 360. According to the fourth embodiment, a part of the conductive layer of the electrode section 360 can be effectively used as the high-frequency electrode driver 390.

[0060] In the third embodiment, the high-frequency electrode driver 290 is provided on a different layer from the electrode unit 60. On the other hand, in the fourth embodiment, the high-frequency electrode driver 390 is provided on the same layer as the resistor driver 362. Therefore, compared to the third embodiment, it is easier to reduce the size of the holding member 310 in the vertical direction.

[0061] <Effects of the fourth embodiment> In the holding member 310 according to the fourth embodiment, the high-frequency electrode driver 390 is included in the electrode section 360 .

[0062] With this configuration, a part of the conductive layer included in the electrode section 360 can be effectively used as the high-frequency electrode driver 390.

[0063] <Other embodiments> (1) In embodiment 1, the electrode zone region 71 is divided into four regions. However, the number of divided regions formed by partitioning the electrode zone region may be two or more, and may be changed as appropriate based on the area of ​​the electrode zone region, the accuracy of the physical properties required of the resistor, etc.

[0064] (2) In the first embodiment, the electrode unit 60 is a driver electrically connected to the resistor 50, but the electrode unit does not have to be a driver. For example, the electrode unit may be a float electrode.

[0065] (3) In the fourth embodiment, the electrode section 360 includes the high-frequency electrode driver 390 and the resistor driver 362, and the high-frequency electrode driver 390 and the resistor driver 362 are formed in the same layer. However, when the high-frequency electrode driver is included in the electrode section, the high-frequency electrode driver may be formed in a layer different from conductive layers other than the high-frequency electrode driver included in the electrode section. [Explanation of symbols]

[0066] 1: Electrostatic chuck 10: holding member, 10A: first surface, 10B: second surface, 11: main body, 12: zone, 13: non-forming zone, 14: terminal 20: base member, 20A: upper surface, 20B: lower surface, 21: refrigerant flow path, 22: terminal hole 30: Joint 40: Chuck electrode 50: resistor, 51: via 60: electrode portion, 61: via 70: electrode area, 71: electrode zone area, 72, 72A, 72B, 72C, 72D: division areas 101: Electrostatic chuck 110: Holding member 160: Electrode part, 160A: First electrode part, 160B: Second electrode part 201: Electrostatic chuck 210: holding member, 215: terminal 220: base member, 223: terminal hole 280: High frequency electrode 290: High frequency electrode driver, 291: Via, 292: Via 301: Electrostatic chuck 310: Holding member 360: electrode portion, 362: resistor driver 370: Electrode area 390: High frequency electrode driver W: Wafer

Claims

1. a main body portion made of an insulating material and having a first surface and a second surface disposed on an opposite side to the first surface; A plurality of resistors formed inside the main body and partitioned into a plurality of zones; an electrode portion disposed near the resistor in a first direction perpendicular to the first surface, a layer-like region including the electrode portion and a part of the insulator and extending parallel to the first surface is defined as an electrode region; When a portion of the electrode region corresponding to one of the zones is defined as an electrode zone region, When the electrode zone region is divided into a plurality of divided regions, and a plurality of divided regions is set, the ratio of the area of ​​the electrode portion in one of the divided regions to the area of ​​one of the divided regions when viewed from the first direction is defined as an electrode ratio. A holding member, wherein the electrode ratio of each of the plurality of divided regions falls within a predetermined range.

2. The holding member according to claim 1 , wherein the electrode rate is 90% or less.

3. The holding member according to claim 1 , wherein the electrode portion is a driver electrically connected to the resistor.

4. The holding member according to claim 1 or claim 2, wherein the electrode portion comprises a first electrode portion arranged on one side of the resistor in the first direction, and a second electrode portion arranged on the other side of the resistor in the first direction.

5. A high-frequency electrode formed inside the main body; a high-frequency electrode driver formed inside the main body and electrically connected to the high-frequency electrode, 3. The holding member according to claim 1, wherein the high-frequency electrode driver is disposed adjacent to the resistor in the first direction.

6. The holding member according to claim 5 , wherein the high frequency electrode driver is included in the electrode portion.

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