Display device

Abstract

To provide a display device having high reliability.SOLUTION: In an EL display device to which specific pixels with a function for adding data are provided, the pixel has a storage node and the storage node can hold first data. In the pixel, second data are added to the first data in a capacitive coupling manner so that third data can be generated. A light emission device operates according to the third data. The pixel has the light emission device which requires a high voltage for light emission or to which a high voltage is preferably applied.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a display device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one aspect relates to an article, a method, or a manufacturing method. One aspect of the present invention is a process, machine, manufacture, or composition. Therefore, the present invention more specifically disclosed herein The technical field of one embodiment of the present invention is a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, device, power storage device, storage device, imaging device, driving method thereof, or manufacturing method thereof One example can be mentioned.

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. A transistor and a semiconductor circuit are one embodiment of a semiconductor device. A display device, an imaging device, or an electronic device may include a semiconductor device. [Background technology]

[0004] A technology for constructing a transistor using a metal oxide formed on a substrate is attracting attention. For example, a transistor using zinc oxide or an In-Ga-Zn oxide is used for the display device. The technology used for the switching element is disclosed in Patent Document 1 and Patent Document 2. .

[0005] In addition, a memory device using a transistor with extremely low off-state current as a memory cell is disclosed in the patent document This is disclosed in reference 3. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2007-123861 A [Patent Document 2] JP 2007-96055 A [Patent Document 3] JP 2011-119674 A Summary of the Invention [Problem to be solved by the invention]

[0007] Display devices used in televisions and mobile information terminals can be easily enlarged and made higher resolution. LCD devices are widely used. LCD devices are also used for 3D images and VR (Virtual Reality) It is an important element in supporting technologies such as 3D reality (VR) and augmented reality (AR).

[0008] On the other hand, LCDs are non-emissive displays, so they require a light source and have a relatively slow response time. It has problems such as being slow and difficult to make flexible. To solve these problems, EL tables One solution is to use an EL display instead. EL displays are self-luminous displays, and the light source It has high contrast and fast response, and does not require a filter. It also has a wide viewing angle and the sensitivity characteristic of liquid crystal elements. Since no loop gap control is required, flexibility is also possible.

[0009] However, the manufacturing of EL displays requires advanced technology, and the characteristics of the transistors are There are issues such as glare and the reliability of light-emitting devices (also called light-emitting elements).

[0010] Therefore, one object of one embodiment of the present invention is to provide an EL display device with high reliability. Another object is to provide an EL display device with low power consumption. One of the objects of the present invention is to provide a novel EL display device. Another object of the present invention is to provide a method for driving a semiconductor device. One of the purposes of this organization is to provide

[0011] The description of these problems does not preclude the existence of other problems. It is not necessary for the embodiment to solve all of these problems. The above will become apparent from the description in the specification, drawings, claims, etc. It is possible to extract other issues from the descriptions in the patent, claims, etc. [Means for solving the problem]

[0012] One embodiment of the present invention relates to an EL display device that is highly reliable. This relates to an EL display device.

[0013] One embodiment of the present invention is a display device having a first pixel and a second pixel, The pixel has a first light-emitting device, and the second pixel has a second light-emitting device. The optical device has a single structure having one light-emitting unit between a pair of electrodes, and the second The light-emitting device has a tandem structure in which two or more light-emitting units are connected in series between a pair of electrodes. The first pixel has a function of storing first data, and the first light-emitting device is The first pixel has a function of emitting light based on the first data, and the second pixel has a function of storing the second data. The second pixel has a function of adding the third data to the second data to generate the fourth data. the first light-emitting device has a function of emitting light based on the fourth data, and the second light-emitting device has a function of emitting light based on the fourth data. It is a display device.

[0014] Another aspect of the present invention is a display device having a first pixel and a second pixel, The pixel includes a first transistor, a second transistor, a first capacitor, and a first a light emitting device, and one of the source and drain of the first transistor is a first One electrode of the first capacitor is electrically connected to one electrode of the second capacitor. A source or drain of a second transistor electrically connected to the gate of the first transistor one of the electrodes is electrically connected to one of the electrodes of the first light emitting device, and the second pixel is a transistor, a fourth transistor, a fifth transistor, and a second capacitor; a third capacitor and a second light emitting device, One of the drains is electrically connected to one electrode of the second capacitor. One electrode of the bottom is electrically connected to one electrode of the third capacitor. The other electrode of the bottom transistor is electrically connected to one of the source and drain of the fourth transistor. One electrode of the second capacitor is electrically connected to the gate of the fifth transistor. The fifth transistor has a source or a drain connected to one of the second light emitting devices. The first light-emitting device is electrically connected to the electrodes, and has one light-emitting unit between the pair of electrodes. The second light-emitting device has a single structure having two or more light-emitting units between a pair of electrodes. The display device has a tandem structure in which the two displays are connected in series.

[0015] The first light emitting device emits red or green light and the second light emitting device emits blue or It is preferable that it emits white light.

[0016] The other electrode of the first light-emitting device and the other electrode of the second light-emitting device are made of a transparent conductive material. The transparent conductive film does not overlap the first light-emitting device and the second light-emitting device. It is preferable that the metal wiring is in contact with the metal wiring.

[0017] The first to fifth transistors each have a metal oxide in a channel formation region, In, Zn, and M (M is Al, Ti, Ga, Sn, Y, Zr, La, Ce, Nd or Hf). Effect of the Invention

[0018] By using one embodiment of the present invention, a highly reliable EL display device can be provided. Alternatively, it is possible to provide an EL display device with low power consumption. It is also possible to provide a method for driving the above-mentioned EL display device. Alternatively, a novel semiconductor device or the like can be provided. [Brief description of the drawings]

[0019] [Figure 1] FIG. 1 is a diagram illustrating a pixel circuit. [Diagram 2] Figure 2(A) is an equivalent circuit of a light-emitting device, and Figure 2(B) is a diagram explaining the voltage drop. [Diagram 3] FIG. 3 is a timing chart illustrating the operation of the pixel circuit. [Figure 4] Fig. 4(A) is a diagram illustrating a pixel circuit, and Figs. 4(B) and (C) are diagrams illustrating combinations of sub-pixels. [Diagram 5] FIG. 5 is a timing chart illustrating the operation of the pixel circuit. [Figure 6] 6(A) and (B) are diagrams illustrating a pixel circuit. [Figure 7] 7(A) and (B) are diagrams illustrating a pixel circuit. [Figure 8] FIG. 8 is a block diagram illustrating the display device. [Figure 9] 9(A) to 9(C) are diagrams illustrating a display device. [Figure 10] 10(A) and (B) are diagrams illustrating a touch panel. [Figure 11] 11(A) and (B) are diagrams illustrating a display device. [Figure 12] 12(A) and (B) are diagrams illustrating a display device. [Figure 13] 13(A) to (C) are diagrams illustrating the auxiliary wiring. [Figure 14] 14(A) to (C) are diagrams illustrating a light-emitting device. [Figure 15] 15(A) to (D) are diagrams illustrating a light-emitting device. [Figure 16] 16(A1) to (C2) are diagrams illustrating a transistor. [Figure 17] 17(A1) to (C2) are diagrams illustrating a transistor. [Figure 18] 18(A1) to (C2) are diagrams illustrating a transistor. [Figure 19] 19(A1) to (C2) are diagrams illustrating a transistor. [Figure 20] 20(A) to (F) are diagrams illustrating electronic devices. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0020] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various modifications and variations in form and detail may be made without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be modified in various ways. The present invention should not be construed as being limited to the description of the embodiments. In the configuration, the same parts or parts having similar functions are designated by the same reference numerals in different drawings. The same elements constituting the figures are used throughout the figure, and their repeated explanations may be omitted. Hatching may be omitted or changed as appropriate between different drawings.

[0021] In addition, even if a circuit diagram shows a single element, it may not have any functional problems. If there is no need for a single element, the element may be composed of multiple elements. For example, In some cases, multiple resistors may be connected in series or parallel. In some cases, it may be acceptable to divide a single element (also called a quantum element) and place it in multiple locations.

[0022] In addition, when one conductor has multiple functions such as wiring, electrodes, and terminals, In this specification, the same element may be referred to by multiple names. Even if the circuit diagram shows direct connections between elements, In some cases, the elements are connected via multiple conductors, and in this specification, Even such a configuration is included in the category of direct connection.

[0023] (Embodiment 1) In this embodiment, a display device which is one embodiment of the present invention will be described with reference to drawings.

[0024] One embodiment of the present invention is an EL display device provided with a pixel having a function of adding data. A storage node is provided in the pixel, and the first data is stored in the storage node. In the pixel, the second data is added to the first data by capacitive coupling, and the third data is generated. The light emitting device operates according to the third data.

[0025] In addition, the EL display device is also provided with pixels that do not have the function of adding data. Therefore, the operation of adding data only for specific pixels is performed. A light emitting device that requires a high voltage or a light emitting device to which a high voltage is preferably applied is provided. It is being done.

[0026] By dividing the functions into pixels in this way, we can increase the writing speed and the reliability of the light-emitting device. In addition, since a relatively high voltage can be generated within the pixel, A general-purpose data driver is used, without using a special data driver that outputs a high voltage. Therefore, it is possible to reduce power consumption and manufacturing costs. do.

[0027] FIG. 1 illustrates a pixel 10a that can be used in a display device according to one embodiment of the present invention. The pixel 10a includes a pixel 11R arranged in the nth row and mth column (n and m are natural numbers of 1 or more), A pixel 11G disposed in the nth row and the m+1th column, and a pixel 11B disposed in the nth row and the m+2th column The pixel 11R emits red light, the pixel 11G emits green light, and the pixel 11B emits blue light. Each sub-pixel emits light, and the light emitted by the three sub-pixels enables color display.

[0028] The pixel 11R includes a transistor 101, a transistor 102, a capacitor 103, and a light emitting diode. The light emitting device 106R has a configuration for emitting red light. There are.

[0029] Pixel 11G has an element that has light-emitting device 106G instead of light-emitting device 106R. The light-emitting device 106G emits green light. It has a configuration.

[0030] In the pixel 11R, one of the source and drain of the transistor 101 is connected to a capacitor One electrode of the capacitor 103 is electrically connected to one electrode of the transistor The source or drain of the transistor 102 is electrically connected to the gate of the transistor 102. One of the electrodes of the capacitor 103 is electrically connected to one of the electrodes of the light-emitting device 106R. The other electrode is electrically connected to, for example, one of the source and drain of the transistor 102. The elements of pixel 11G can be connected in the same manner as the elements of pixel 11R.

[0031] The pixel 11B includes a transistor 111, a transistor 112, a transistor 113, and The light emitting device includes a capacitor 114, a capacitor 115, and a light emitting device 116B. The pixel 116B has a configuration that emits blue light. The capacitive coupling of the capacitor 115 causes a current to flow from the transistor 111 and the transistor 112. It is possible to add two pieces of data input from the same input terminal.

[0032] One of the source and drain of the transistor 111 is connected to one electrode of the capacitor 114. One electrode of the capacitor 114 is electrically connected to one electrode of the capacitor 115. The other electrode of the capacitor 115 is electrically connected to the source of the transistor 112. One electrode of the capacitor 114 is electrically connected to one of the drains of the transistor. The source or drain of the transistor 113 is electrically connected to the gate of the transistor 113. One of the electrodes of the capacitor 11 is electrically connected to one of the electrodes of the light emitting device 116B. The other electrode of the transistor 4 is electrically connected to, for example, one of the source and drain of the transistor 113. Connected.

[0033] The gate of the transistor 101 and the gate of the transistor 111 are connected to a wiring 121[n] The gate of the transistor 112 is electrically connected to the wiring 122[n]. To be continued.

[0034] In the pixel 11R, the other of the source and the drain of the transistor 101 is connected to a wiring 123 In the pixel 11G, the source or The other drain is electrically connected to the wiring 123[m+1]. The other of the source and the drain of the transistor 111 is electrically connected to the wiring 123[m+2]. The other of the source and drain of the transistor 112 is connected to a wiring 124[m+2] and electrically connected to the

[0035] The other of the source or drain of the transistor 102 and the source of the transistor 113 The other of the drains is electrically connected to the wiring 128. The other electrodes of 06G and 116B are electrically connected to wiring 129.

[0036] The wirings 121[n] and 122[n] serve as signal lines for controlling the operation of the transistors. The wiring 123[m] to [m+2] can have the function of supplying image data. The wiring 124[m+2] can function as a signal line for receiving a reference potential or The wiring 128 and 12 9 can function as a power supply line. In the connection form of the light emitting device shown in FIG. For example, the wiring 128 is a power supply line that supplies a high potential, and the wiring 129 is a power supply line that supplies a low potential. Or it can be a GND potential line.

[0037] In the pixel 11R, one of the source and drain of the transistor 101 and the capacitor 1 The wiring to which one electrode of the transistor 103 and the gate of the transistor 102 are connected is called a node NM[ Similarly, in pixel 11G, the wiring is designated as node NM[G]. In FIG. 1B, one of the source and drain of the transistor 111 and the capacitor 114 One electrode of the capacitor 115 and the gate of the transistor 113 are connected to each other. The wiring to be connected is called node NM[B].

[0038] Nodes NM[R], NM[G], and NM[B] are storage nodes. For example, In the pixel 11R, the transistor 101 is turned on, so that The data stored in the node NM[R] can be written to the node NM[R]. By making the node non-conductive, the data can be held in the node NM[R]. The same is true for M[G] and node NM[B].

[0039] The transistors 101 and 111 are transistors with extremely low off-state current. By doing so, the potentials of nodes NM[R], NM[G], and NM[B] can be maintained for a long time. Therefore, for still images, the frame frequency at which data is written is This can reduce the power consumption of the display device. In order to suppress the potential change of the node NM[B] via the transistor 115, an off-state voltage is also applied to the transistor 112. It is preferable to use low current transistors.

[0040] The transistor in question is, for example, a transistor in which a metal oxide is used for a channel formation region ( Hereinafter, an OS transistor) can be used.

[0041] In addition to the transistors 101 and 111, other transistors constituting the pixel Alternatively, an OS transistor may be used. A transistor having a gate electrode formed in the gate insulating film (hereinafter, referred to as a silicon transistor) may be used. A pixel may be configured using both an OS transistor and a Si transistor. The Si transistor may be a transistor having amorphous silicon, a transistor having crystalline silicon, Transistors having silicon (typically low-temperature polysilicon or single crystal silicon) Some examples include:

[0042] The semiconductor material used for the OS transistor is preferably a material having an energy gap of 2 eV or more. Alternatively, a metal oxide having a polarization of 2.5 eV or more, more preferably 3 eV or more, can be used. A typical example is an oxide semiconductor containing indium. -OS or CAC-OS can be used. CAAC-OS forms a crystal. The atoms are stable, making it suitable for transistors where reliability is important. Since it exhibits high mobility characteristics, it is suitable for use in transistors that operate at high speed.

[0043] Since the OS transistor has a large energy gap, the current is several yA / μm (channel width 1 μm In addition, the OS transistor has extremely low off-state current characteristics. No impact ionization, avalanche breakdown, or short channel effects occur in the Si transistor. It has characteristics different from transistors and can form highly reliable circuits with high voltage resistance. In addition, there is a problem with silicon transistors, namely, the variation in electrical characteristics caused by the non-uniformity of crystallinity. This is also unlikely to occur in OS transistors.

[0044] The semiconductor layer of the OS transistor is made of, for example, indium, zinc, and M (aluminum). , titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium In-M-Zn oxides containing metals such as tin, neodymium, or hafnium In-M-Zn oxides are typically formed by sputtering. Alternatively, ALD (Atomic Layer Deposition) can be used. The insulating layer 11 may be formed by using method n).

[0045] A sputtering tube used to form In-M-Zn oxide by sputtering. The atomic ratio of the metal elements in the get preferably satisfies In≧M and Zn≧M. The atomic ratio of the metal elements in the sputtering target is In:M:Zn=1:1:1. , In:M:Zn=1:1:1.2, In:M:Zn=3:1:2, In:M:Zn=4 :2:3, In:M:Zn=4:2:4.1, In:M:Zn=5:1:6, In:M: The preferred ratios are Zn=5:1:7, In:M:Zn=5:1:8, etc. The atomic ratio of each layer is the atomic ratio of the metal elements contained in the sputtering target. This includes a variation of plus or minus 40% in the ratio.

[0046] The semiconductor layer is made of an oxide semiconductor having a low carrier density. Carrier density is 1×10 17 / cm 3 Less than or equal to 1×10 15 / cm 3 Further details are below. Preferably 1 x 10 13 / cm 3 Less than or equal to 1×10 11 / cm 3 The following is further Preferably 1 x 10 10 / cm 3 Less than 1 x 10 -9 / cm 3 More than 10 ... Such oxide semiconductors can be used as high-purity intrinsic or substantially high-purity oxide semiconductors. This oxide semiconductor has a low density of defect states and has stable characteristics. It can be said that this is an oxide semiconductor.

[0047] In addition, the semiconductor characteristics and electrical characteristics (field effect) of the required transistors are not limited to these. An oxide semiconductor having an appropriate composition may be used depending on the characteristics of the semiconductor layer (e.g., the performance mobility, the threshold voltage, etc.). In order to obtain the required semiconductor characteristics of a transistor, the carrier density and impurity concentration of the semiconductor layer are adjusted. The degree of crystallization, defect density, atomic ratio of metal elements to oxygen, interatomic distance, density, etc. must be appropriate. is preferred.

[0048] In the oxide semiconductor that constitutes the semiconductor layer, silicon and carbon, which are group 14 elements, If oxygen is contained, oxygen vacancies increase and the semiconductor layer becomes n-type. The concentration of cations and carbon (Secondary Ion Mass Spectroscopy (SIMS) The concentration obtained by ss Spectrometry) is 2×10 18 atoms / cm 3 Less than or equal to 2 x 10 17 atoms / cm 3 The following applies.

[0049] In addition, alkali metals and alkaline earth metals generate carriers when bonded to oxide semiconductors. This may result in an increase in the off-state current of the transistor. The concentration of alkali metals or alkaline earth metals in the conductor layer (concentration obtained by SIMS) degrees), 1×10 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / c m 3 To the following:

[0050] In addition, when the oxide semiconductor constituting the semiconductor layer contains nitrogen, the electrons that serve as carriers This increases the carrier density and makes it easier to become n-type. Transistors using conductors tend to be normally-on. The nitrogen concentration (obtained by SIMS) was 5×10 18 atoms / cm 3 Below It is preferable to do so.

[0051] In addition, when hydrogen is contained in the oxide semiconductor that constitutes the semiconductor layer, the oxide that bonds with the metal atom Since oxygen reacts with oxygen to form water, oxygen vacancies may be formed in the oxide semiconductor. If the channel formation region in the conductor contains oxygen vacancies, the transistor will be normally on. In addition, defects in which hydrogen has entered an oxygen vacancy can act as donors and In addition, some of the hydrogen atoms bond with the metal atoms, resulting in the generation of carrier electrons. It may combine with hydrogen to generate electrons, which are carriers. A transistor including an oxide semiconductor having such a structure tends to be normally-on.

[0052] A defect in which hydrogen has entered an oxygen vacancy can function as a donor in an oxide semiconductor. However, it is difficult to quantitatively evaluate the defects. Therefore, in this specification, the acid concentration is evaluated based on the carrier concentration. As a parameter of the compound semiconductor, we assume a state in which no electric field is applied, rather than the donor concentration. In other words, the "carrier concentration" described in this specification and the like is This can sometimes be rephrased as "donor concentration."

[0053] Therefore, it is preferable to reduce hydrogen in the oxide semiconductor as much as possible. In the oxide semiconductor, the hydrogen concentration obtained by SIMS is 1×10 20 atoms / cm 3 Less than 1 x 10 19 atoms / cm 3 Less than 5×1 0 18 atoms / cm 3 less than 1×10 18 atoms / cm 3 less than An oxide semiconductor with sufficiently reduced impurities such as hydrogen is used as the channel type of a transistor. By using it in the composition region, stable electrical characteristics can be imparted.

[0054] The semiconductor layer may also have a non-single crystal structure. The non-single crystal structure may have a c-axis oriented structure. CAAC-OS (C-Axis Aligned Crystalline ne Oxide Semiconductor), polycrystalline, microcrystalline, or non-crystalline Among non-single crystal structures, the amorphous structure has the highest defect level density and CAA C-OS has the lowest density of defect states.

[0055] An oxide semiconductor film having an amorphous structure has, for example, a disordered atomic arrangement and does not contain a crystalline component. Alternatively, the oxide film having an amorphous structure is, for example, a completely amorphous structure having no crystal parts. stomach.

[0056] In addition, the semiconductor layer may have an amorphous structure region, a microcrystalline structure region, a polycrystalline structure region, a CAAC structure region, or a crystalline structure region. The film may be a mixed film having two or more of the -OS region and the single crystal structure region. The film may have a single layer structure including two or more of the above-mentioned regions, or a laminate structure. It may have a structure.

[0057] In the following, we will discuss a CAC (Cloud-Aligned Crystalline) semiconductor layer, which is one form of a non-single crystal semiconductor layer. This article explains the configuration of the omposite OS.

[0058] CAC-OS is, for example, an oxide semiconductor in which the elements constituting the oxide semiconductor are 0.5 nm to 10 nm. Preferably, the material is unevenly distributed in a size range of 1 nm to 2 nm or less, or in the vicinity of the range. In the following, it is assumed that one or more metal elements are present in the oxide semiconductor. The region having the metal element is unevenly distributed and has a size of 0.5 nm to 10 nm, preferably 1 nm A mixture of particles with sizes of 2 nm or more or less, or close to that size, in a mosaic or patch pattern It is also called.

[0059] Note that the oxide semiconductor preferably contains at least indium. In addition to these, aluminum, gallium, yttrium, and zinc are preferably contained. Thorium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, Rumanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, Contains one or more of the following: tantalum, tungsten, or magnesium. It may be included.

[0060] For example, CAC-OS made of In-Ga-Zn oxide (In-Ga-Zn oxide is one of the CAC-OS) a-Zn oxide may be specifically referred to as CAC-IGZO. (Hereinafter, InO X1 (X1 is a real number greater than 0.) or indium zinc oxide compound (hereinafter referred to as In X2 Zinc Y2 O Z2 (X2, Y2, and Z2 are real numbers greater than 0) ) and gallium oxide (GaO X3 (X3 is a real number greater than 0) . ) or gallium zinc oxide (Ga X4 Zinc Y4 O Z4 (X4, Y4, and Z4 is a real number greater than 0. The material is separated into a mosaic shape. Mosaic InO X1 , or In X2 Zinc Y2 O Z2 was distributed uniformly in the film. This is a cloud-like configuration.

[0061] In other words, CAC-OS is X3 The region where In is the main component and X2 Zinc Y2 O Z2 , or InO X1 A composite oxide semiconductor having a structure in which a region in which In this specification, for example, the atomic ratio of In to the element M in the first region is is greater than the atomic ratio of In to the element M in the second region. Assume that the In concentration is higher than in region 2.

[0062] IGZO is a common name and refers to a compound made of In, Ga, Zn, and O. A typical example is InGaO3(ZnO). m1 (m1 is a natural number), or In ( 1+x0) Ga (1-x0) O3(ZnO) m0 (-1≦x0≦1, m0 is an arbitrary number) Examples of the crystalline compounds include those which are

[0063] The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure. The CAAC structure is a structure in which multiple IGZO nanocrystals have a c-axis orientation and are aligned in the ab plane. is a non-oriented connected crystal structure.

[0064] On the other hand, CAC-OS refers to the material composition of oxide semiconductors. In a material composition containing a, Zn, and O, some of the nanoparticles are observed to be mainly composed of Ga. The regions where the In nanoparticles are observed are the same as those where the In nanoparticles are observed as the main component. This refers to a structure in which the pixels are randomly distributed in a mosaic pattern. The crystal structure is a secondary factor.

[0065] It should be noted that the CAC-OS does not include a laminated structure of two or more films having different compositions. For example, a structure consisting of two layers, a film mainly made of In and a film mainly made of Ga, is not included. do not have.

[0066] In addition, GaO X3 The region where In is the main component and X2 Zinc Y2 O Z2 , or InO X1 but In some cases, a clear boundary between the region of the main component and the region of the main component may not be observed.

[0067] Instead of gallium, aluminum, yttrium, copper, vanadium, and beryllium can be used. , boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum , lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium If one or more selected types of sodium, etc. are included, CAC-OS will The region observed is a nanoparticle of the metal element as the main component, and the region observed is a nanoparticle of In as the main component. The nanoparticle-like regions are randomly distributed in a mosaic pattern. say.

[0068] CAC-OS is formed by sputtering without intentionally heating the substrate. In addition, when the CAC-OS is formed by a sputtering method, the deposition gas and The gas is selected from an inert gas (typically argon), oxygen gas, and nitrogen gas. One or more of these may be used. The lower the flow rate ratio of the gas, the more preferable. For example, the flow rate ratio of oxygen gas is preferably 0% or more and less than 30%. Or, it is preferable to set it to 0% or more and 10% or less.

[0069] CAC-OS is a type of X-ray diffraction (XRD) measurement method. When measured using the θ / 2θ scan by the out-of-plane method, In other words, no clear peaks are observed from the X-ray diffraction measurement. It can be seen that the orientation of the regions in the ab plane direction and the c-axis direction is not observed.

[0070] In addition, CAC-OS uses an electron beam with a probe diameter of 1 nm (also called a nanobeam electron beam). In the electron diffraction pattern obtained by irradiating the sample, a ring-shaped area of ​​high brightness (phosphorescence) is observed. The electron diffraction pattern is a ring region, and multiple bright spots are observed in the ring region. Therefore, the crystal structure of CAC-OS does not have orientation in the planar direction and the cross-sectional direction. It can be seen that it has a nano-crystal structure.

[0071] For example, in the CAC-OS of In-Ga-Zn oxide, the energy dispersive X Energy Dispersive X-ray spectroscopy (EDX) The EDX mapping obtained using scopy revealed that GaO X3 The area where is the main component And, In X2 Zinc Y2 O Z2 , or InO X1 The areas where the main component is It can be confirmed that the compound has a structure similar to that shown in FIG.

[0072] CAC-OS has a structure different from that of IGZO compounds in which metal elements are uniformly distributed. It has different properties from ZO compounds. That is, CAC-OS is GaO X3 The main ingredients are In a certain area, X2 Zinc Y2 O Z2 , or InO X1 The region where is the main component and The phase is separated into two layers, and the regions each containing one element as a main component are arranged in a mosaic pattern.

[0073] Here, In X2 Zinc Y2 O Z2 , or InO X1 The area where GaO is the main component X3 This region has a higher electrical conductivity than the region where In is the main component. X2 Zinc Y 2O Z2 , or InO X1 The carriers flow through the area where the main component is oxidized. Therefore, the In X2 Zinc Y2 O Z2 , or In O X1 The region in which the main component is distributed in a cloud-like shape in the oxide semiconductor is a region in which a high electric field Effective mobility (μ) can be achieved.

[0074] On the other hand, GaO X3 The region where the main components are In X2 Zinc Y2 O Z2 , or InO X This region has higher insulating properties than the region where GaO X3 etc. The distribution of the main component in the oxide semiconductor suppresses leakage current and provides good switching performance. Switching operation can be achieved.

[0075] Therefore, when CAC-OS is used in a semiconductor device, GaO X3 Insulation caused by And, In X2 Zinc Y2 O Z2 , or InO X1 The conductivity caused by the This results in a high on-state current (I on ) and high field-effect mobility (μ This can be done.

[0076] In addition, semiconductor devices using CAC-OS have high reliability. , and is suitable as a constituent material for various semiconductor devices.

[0077] In pixel 11R, the necessary data is written to node NM[R] in one write operation. The light emission of the light emitting device 106R is controlled in response to the data. The same is true for the pixel 11G. On the other hand, in the pixel 11B, after the first data is written to the node NM[B], The second data is added to the first data, and the light emitting device 11 is controlled in response to the generated third data. Controls the light emission of 6B.

[0078] In other words, a relatively low voltage is applied to the light-emitting devices that emit red and green light, and a relatively low voltage is applied to the light-emitting devices that emit blue light. A relatively high voltage is applied to a light emitting device that emits light.

[0079] Here, the advantage of applying a high voltage to a light emitting device that emits blue light will be described.

[0080] The light-emitting layer of the light-emitting device is made of a fluorescent material or a phosphorescent material. The light-emitting device used has a relatively long lifespan, but it can only convert up to 25% of the input power into light. On the other hand, light-emitting devices using phosphorescent materials have poor light-emitting efficiency. Theoretically, 100% of the electricity generated can be converted into light. However, phosphorescent materials have high In general, rare metals, which are expensive, are used. In addition, there are issues with productivity, such as yield and refining. At present, the only phosphorescent materials that can be mass-produced are red The blue color is limited to blue and green, and fluorescent materials are used for blue.

[0081] Therefore, with the same device structure and the same input power, a light-emitting device that emits blue light will emit The brightness of the light-emitting device is lower than that of the light-emitting device that emits green or red. Since the brightness is proportional to the current, it is possible to increase the brightness by increasing the voltage and passing a large current. However, passing a large current through the element causes current stress, which shortens the element's lifespan. This occurs.

[0082] Therefore, it is preferable that the blue light emitting device has a tandem structure. This reduces the current stress per element, which extends the element life. If the effect on element life is tolerable, a single structure may be used.

[0083] In this specification, a structure in which two or more light-emitting units are connected in series between a pair of electrodes is referred to as a "semiconductor device." This is called a tandem structure. In a tandem structure, charge generation is performed between multiple light-emitting units. It is preferable that a light-emitting layer is provided. Also, one light-emitting unit is provided between the pair of electrodes. A structure with this structure is called a single structure. Also, a light-emitting unit is a unit that has at least a light-emitting layer. Other functional layers (hole transport layer, hole injection layer, electron transport layer, electron injection layer, etc.) The details of the light-emitting unit will be described in the second embodiment. .

[0084] For example, as shown in FIG. 2(A), a two-layer tandem light-emitting device is integrated into a pixel circuit. The equivalent circuit of 120 is formed by connecting two diodes 119 in series.

[0085] Figure 2(B) shows the IV characteristics that explain the forward characteristics of a light-emitting device (diode). The forward voltage of the light emitting device is “V f"When two identical light-emitting devices are connected in series, When the two light emitting devices are connected, the voltage at which current begins to flow is 2V. f "That's all.

[0086] On the other hand, in a tandem structure, light is emitted from multiple light-emitting units, so the same current is applied to each unit. In the case of the single-structure, a higher emission intensity can be obtained than in the case of the single-structure. This can improve reliability more than increasing the emission intensity by passing a large current.

[0087] As described above, in the tandem structure, it is necessary to increase the voltage supplied to the light emitting device. Therefore, a high-voltage output data driver may be required. In one embodiment, a relatively high voltage is generated by adding the voltages output by the data driver in the pixel circuit. This allows operation with low power consumption. This can eliminate the need for a general-purpose data driver, etc. Display devices (also called display elements) that are difficult to operate even with a voltage output data driver It can also be made to work.

[0088] In this embodiment, data is added only to pixel 11B in order to reduce the writing time. However, one embodiment of the present invention is not limited to this. The pixel 11G may also be provided with this function.

[0089] In the pixel 11B, first, the first data (weight: W) is written to the node NM[B]. At this time, the other electrode of the capacitor 115 is supplied with a reference potential “V0”, and the capacitor 115 Next, node NM[B] is made floating and the capacitance The other electrode of the bottom 115 is supplied with the second data (data: D).

[0090] At this time, the capacitance of the capacitor 115 is C 115 , the capacitance value of node NM[B] is C NM[ B] Then, the potential of node NM[B] is "W+(C 115 / (C 115 +C NM[B ] )) × (D-V0)”. Here, C 115 Increase the value of C NM[B] The value of Once it becomes negligible, the potential of the node NM becomes "W+D-V0."

[0091] Therefore, “W” = “D”, “V0” = 0V, and C 115 C NM[B] compared to If the potential of the node NM[B] is large enough, the potential of the node NM[B] approaches “2D”. The third data ("2D"), which is about twice the potential of the potential output from the buffer to the pixel, is input to the node N This means that it can be supplied to M[B].

[0092] An example of the operation of the pixel 10a shown in FIG. 1 will be described with reference to a timing chart shown in FIG. In the following description, a high potential is represented by "H" and a low potential is represented by "L". The data to be supplied to 1[R] is “D R ", and the data to be supplied to pixel 11[G] is "D G ”, picture The first data (corresponding to the weight) to be supplied to element 11[B] is “D 1B ", the second data (data (corresponding to “D 2B "V0" can be, for example, 0V, GND potential, or a specific A reference potential of can be used.

[0093] In addition, in the distribution, coupling, or loss of potential, the circuit configuration, operation timing, etc. Detailed changes due to capacitive coupling using a capacitor are not taken into account. Although the capacitance ratio of the capacitor to the connected element depends on the capacitance ratio of the capacitor, for the sake of clarity, Therefore, the capacitance of the element is assumed to be sufficiently small. Although writing is illustrated, a dot sequential method may also be used.

[0094] If the potential of the wiring 121[n] is set to “H” and the potential of the wiring 122[n] is set to “H” at time T1, In the pixels 11R and 11G, the transistor 101 is turned on. As a result, the transistor 111 and the transistor 112 become conductive.

[0095] At time T1, the node NM[R] of the pixel 11[R] receives the signal supplied to the wiring 123[m]. "D R " is written.

[0096] In addition, the node NM[G] of the pixel 11[G] is connected to the wiring 123[m+1]. G " is written.

[0097] In addition, the node NM[B] of the pixel 11[B] is connected to the line 123[m+2], which is connected to the “D1 B " is written.

[0098] The potential of the other electrode of the capacitor 115 is the potential “V0 This operation is a reset operation for performing the subsequent addition operation (capacitive coupling operation). At this time, the capacitor 115 has a “D 1B -V0” is maintained.

[0099] When the potential of the wiring 121[n] is set to “L” at time T2, the transistors 101 and 111 are non-conducting. The potentials of nodes NM[R], NM[G] and NM[B] are maintained. In the pixel 11R and the pixel 11G, the node NM[R] or the node NM[G ] until the operation of the next frame.

[0100] Also, at time T2, “D 2B When " is supplied, the capacitor 115 The change in potential of the other electrode, “D 2B -V0” is connected to the capacitor 115 and the node NM[B] The capacitance ratio is added to the node NM[B]. This operation is an addition operation, and the node NM The potential of [B] is “D 1B +(D 2B -V0)'". At this time, "V ref "=0 If so, the potential of node NM[B] becomes “D 1B +D 2B '".

[0101] Here, D 1B =D 2B The capacitance of the node NM[B] is greater than the capacitance of the capacitor 115. If it is sufficiently small, 1B +D 2B '” is “2D 1B " is close to the value. This provides the display device with a data potential that is approximately twice the data potential output by the data driver. It is possible.

[0102] When the potential of the wiring 122[n] is set to “L” at time T3, the transistor 112 is turned off. Therefore, the potential of the node NM[B] is maintained, and the display continues until the operation of the next frame. This is an explanation of the operation of pixel 10a. With this operation, even if the input voltage is small, It is possible to operate a light emitting device in a DEM structure.

[0103] The pixel 10a shown in FIG. 1 has three sub-pixels: a pixel 11R, a pixel 11G, and a pixel 11B. However, the pixel 11W may be configured to emit white light as a subpixel. By adding white to the subpixel, the brightness of the screen can be increased, so pixel 10a The same level of brightness can be achieved with less power than when using a 100-watt OLED. This makes it suitable for use in large-screen televisions and digital signage.

[0104] FIG. 4A shows a pixel having four sub-pixels: a pixel 11R, a pixel 11G, a pixel 11B, and a pixel 11W. 1 is a diagram illustrating a pixel 10b having a pixel structure similar to that of the pixel 10a. The pixel 10b is divided into three sub-pixels of the pixel 10a. In addition, a sub-pixel of pixel 11W provided in the nth row and the m+3th column is added. The circuit configuration of the pixel 11B is the same as that of the pixel 11B, and the pixel 11B has a light-emitting device 116W that emits white light. .

[0105] To obtain white light, a light-emitting device capable of emitting red, green, and blue light or a combination of the two colors can be used. A light-emitting device capable of emitting two colors that are complementary to each other can be used. Therefore, it is preferable that the blue light emitting device has a tandem structure as in the above-mentioned blue light emitting device. As the light-emitting device 116W that emits white light, The following description will be given assuming the use of a light emitting device having a three-layer tandem structure with a knit.

[0106] As shown in FIG. 4A, the pixel 11W has the same configuration as the pixel 11B, and the wiring 123[m +3] and wiring 124[m+3].

[0107] An example of the operation of the pixel 10b shown in FIG. 4(A) will be described with reference to a timing chart shown in FIG. In addition, detailed explanations common to the pixel 10a will be omitted. The first data (corresponding to the weight) to be supplied to 11[W] is “D 1W ", the second data (data (equivalent to “D 2W "

[0108] In addition, the light emission of a three-layer tandem light-emitting device requires a higher current than that of a two-layer tandem light-emitting device. In this case, the potential of the node NM[W] is “3D 1W " Explain the work.

[0109] The basic operation of the pixels 11R, 11G, and 11B is the same as that of the pixel 10a. This section describes only the operation of pixel 11W.

[0110] If the potential of the wiring 121[n] is set to “H” and the potential of the wiring 122[n] is set to “H” at time T1, In pixel 11W, transistor 111 and transistor 112 are turned on.

[0111] At time T1, the node NM[W] of the pixel 11[W] is connected to the wiring 123[m+3]. "D 1W " is written.

[0112] The potential of the other electrode of the capacitor 115 is the potential supplied to the wiring 124[m+3]. "-D 2W This operation is a reset for the subsequent addition operation (capacitive coupling operation). At this time, the capacitor 115 has a “D 1W -(-D 2W )” is preserved. .

[0113] When the potential of the wiring 121[n] is set to “L” at time T2, the transistor 111 becomes non-conductive. , the potential of the node NM[W] is maintained.

[0114] Also, at time T2, “D 2W When " is supplied, the capacitor 115 The change in potential of the other electrode, “D 2W -(-D 2W )” is connected to the capacitor 115 and the node NM [W] is added to the potential node NM[W] according to the capacitance ratio. The potential of node NM[W] is “D 1W +(D 2W -(-D 2W ))'".

[0115] Here, D 1W =D 2W The capacitance of the node NM[W] is greater than the capacitance of the capacitor 115. If it is sufficiently small, 1W +(D 2W -(-D 2W ))'” is “3D 1W Close to Therefore, it represents a data potential that is about three times the data potential output by the data driver. The signal can be supplied to a device for displaying the signal.

[0116] When the potential of the wiring 122[n] is set to “L” at time T3, the transistor 112 is turned off. Therefore, the potential of the node NM[W] is maintained, and the display continues until the operation of the next frame. This is an explanation of the operation of the pixel 11W in the pixel 10b. Even light-emitting devices with a silicon structure can be operated with a small input voltage.

[0117] As shown in FIG. 4B, the pixel 10b has R (red), G (green), B (blue), and W (white). The pixel is composed of sub-pixels that emit a total of four colors. As shown in C), pixel 10c has the following combination of RGB, WRG, BWR, and GBW: A pixel may be composed of sub-pixels that emit three colors. Not limited to GBW. For example, in addition to RGBW, Y (yellow), M (magenta), C (cyan), A pixel may be configured to include sub-pixels that emit one or more colors, such as blue, green, or blue.

[0118] One embodiment of the present invention can be applied to a pixel circuit having a different structure from that shown in FIG. In the following description, the pixel 11B will be described, but the other pixels can also be described. A similar configuration can be used.

[0119] For example, as shown in FIG. 6A, one electrode of the light-emitting device 116B is connected to the wiring 128. The other electrode of the light emitting device 116B is electrically connected to the source or It may be electrically connected to the other drain.

[0120] As shown in FIG. 6B, a transistor 117 is added to the configuration of FIG. 1 or FIG. 4A. Either the source or the drain of the transistor 117 may be a transistor. The transistor 117 is electrically connected to one of the source and drain of the transistor 113. The other of the source and drain is electrically connected to one electrode of the light emitting device 116B. The gate of the transistor 117 is electrically connected to the wiring 130. , and can function as a signal line for controlling the conduction of a transistor.

[0121] In this configuration, the potential of the node NM[B] is equal to or higher than the threshold voltage of the transistor 113. When transistor 117 is conductive, a current flows through light emitting device 116B. Therefore, by controlling the conduction of the transistor 117, the weight (W) and data (D) are added. Light-emitting device 116B can start emitting light at any time after the operation.

[0122] Also, as shown in FIG. 7A, a transistor 118 is added to the configuration of FIG. 1 or FIG. 4A. Either the source or the drain of the transistor 118 may be a transistor. The transistor 118 is electrically connected to one of the source and drain of the transistor 113. The other of the source and the drain of the transistor 11 is electrically connected to a wiring 131. The gate of the transistor 8 is electrically connected to a wiring 132. The wiring 132 is It can have a function as a control signal line.

[0123] The wiring 131 can be electrically connected to a source of a specific potential, such as a reference potential. A specific potential is applied to either the source or drain of transistor 113 from line 131. This allows the source potential of the transistor 113 to be determined, stabilizing the writing of image data. In addition, the timing of light emission of the light-emitting device 116B can be controlled. Cut.

[0124] In addition, the wiring 131 can be connected to an external circuit and has a function as a monitor line. The external circuit can be a source of the specific potential, and can control the electrical characteristics of the transistor 111. The correction data generating unit may have one or more of the functions of acquiring and generating correction data.

[0125] In the pixel circuit of one embodiment of the present invention, as shown in FIG. A back gate may be provided. In FIG. 7B, the back gate is in contact with the front gate. This shows a configuration in which the transistor is electrically connected to the on-state current. The gate electrode may be electrically connected to a wiring capable of supplying a constant potential. In this structure, the threshold voltage of the transistor can be controlled. , (B), and the configuration of FIG. 7(A).

[0126] FIG. 8 is a block diagram illustrating a display device according to one embodiment of the present invention. Also, the pixels 10a arranged in the row direction, the gate driver 12a, and the gate driver 12b and a source driver (data driver) 13. The gate driver 12a drives the pixel The gate driver 12b is electrically connected to the pixel 1R, the pixel 11G, and the pixel 11B. The source driver 13 is electrically connected to the pixel 11R, the pixel 11G, and the pixel 11B. It is electrically connected to pixel 11B. Note that, although an example in which the gate driver is divided has been shown, all The pixels may be connected to one gate driver.

[0127] The gate drivers 12a and 12b and the source driver 13 are, for example, implemented using shift registers. In addition, a shift register and a buffer circuit can be combined to form a By controlling the conduction of the buffer circuit, a drive signal or can output image data.

[0128] In the above, the display device to which the pixel 10a is applied is exemplified, but the pixel 10b or the pixel 10 A display device to which the method c is applied can also have a similar configuration.

[0129] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. It is possible.

[0130] (Embodiment 2) In this embodiment, a configuration example of a display device using a light-emitting device will be described. In the embodiment, the elements, operations and functions of the display device described in the first embodiment will be described. is omitted.

[0131] 9A to 9C are diagrams illustrating the structure of a display device in which one embodiment of the present invention can be used. It is.

[0132] In FIG. 9A, a display unit 215 provided on a first substrate 4001 is surrounded by a A sealant 4005 is provided, and the display unit 215 is attached to the sealant 4005 and the second substrate 40 It is sealed by 06.

[0133] The display portion 215 can be provided with the pixel shown in FIG. 1 or FIG. The scanning line driving circuit described below is a gate driver, and the signal line driving circuit is a source driver. Equivalent to ba.

[0134] The scanning line driving circuit 221a, the signal line driving circuit 231a, and the signal line driving circuit 231a shown in FIG. 232a and the common line driver circuit 241a are provided on a printed circuit board 4041. The integrated circuits 4042 are made of a single crystal semiconductor or a polycrystalline The signal line driver circuit 231a and the signal line driver circuit 232a are formed using semiconductor. The scanning line driver circuit 221a has the function of the source driver shown in the first embodiment. The common line driver circuit 241a has the function of the gate driver shown in the first embodiment. The power supply line shown in form 1 has a function of supplying a specified potential to the power supply line, etc.

[0135] A scanning line driving circuit 221a, a common line driving circuit 241a, a signal line driving circuit 231a, and a signal Various signals and potentials are applied to the line driver circuit 232a via a flexible printed circuit (FPC). The signal is supplied via a digital signal processor (DPC) 4018.

[0136] The integrated circuit 4042 included in the scanning line driver circuit 221a and the common line driver circuit 241a is The signal line driver circuit 231a and the signal line driver The integrated circuit 4042 of the drive circuit 232a has a function of supplying image data to the display unit 215. The integrated circuit 4042 is surrounded by a sealant 4005 on the first substrate 4001. The device is implemented in a different area than the area in which it is installed.

[0137] The method of connecting the integrated circuit 4042 is not particularly limited, and may be wire bonding. COG (Chip On Glass) method, TCP (Tape Carrier Package method, COF (Chip On Film) method, etc. can be used. .

[0138] FIG. 9B shows an integrated circuit included in the signal line driver circuit 231a and the signal line driver circuit 232a. In addition, a part or the whole of the driving circuit is mounted by the COG method. The display unit 215 may be formed integrally on the same substrate to form a system-on-panel. do.

[0139] In FIG. 9B, the scanning line driving circuit 221a and the common line driving circuit 241a are 5 is formed on the same substrate as the pixel circuit in the display unit 215. By forming the coil in a single coil, the number of parts can be reduced, thereby improving productivity. Cut.

[0140] In FIG. 9B, the display portion 215 and the scanning line driver 4001 are provided on the first substrate 4001. A sealant 4005 is provided so as to surround the circuit 221a and the common line driver circuit 241a. In addition, the display unit 215, the scanning line driving circuit 221a, and the common line driving circuit 2 A second substrate 4006 is provided on the display unit 215 and the scanning line driver 41a. The circuit 221a and the common line driver circuit 241a are formed on a first substrate 4001 and a sealant 400. 5 and the second substrate 4006, sealing the display device together.

[0141] In addition, in FIG. 9B, the signal line driver circuit 231a and the signal line driver circuit 232a are separately formed. 4001 and mounted on a first substrate 4001, but the present invention is not limited to this configuration. The scanning line driver circuit may be formed separately and mounted, or may be mounted as a part of the signal line driver circuit or a scanning line driver circuit. Alternatively, a part of the driving circuit may be formed separately and mounted. The signal line driver circuit 231a and the signal line driver circuit 232a may be formed on the same substrate as the display unit 215. good.

[0142] The display device includes a panel in which a display device is sealed, and a control unit connected to the panel. This may also include modules in which ICs, etc. including controllers are mounted.

[0143] In addition, the display portion and the scanning line driver circuit provided on the first substrate have a plurality of transistors. The transistors in the peripheral driver circuits and the transistors in the pixel circuits of the display unit The transistors in the peripheral driver circuits may have the same structure or may be different. The data may all be of the same structure, or two or more types of structures may be used in combination. Similarly, the transistors in the pixel circuit may all have the same structure, or may have two types of transistors. The above structures may be used in combination.

[0144] An input device can be provided on the second substrate 4006. The configuration provided with the input device can function as a touch panel.

[0145] There is no limitation on a detection element (also referred to as a sensor element) included in a touch panel of one embodiment of the present invention. We offer a variety of sensors that can detect the proximity or contact of a finger, stylus, or other object. , can be applied as a sensing element.

[0146] The sensor type may be, for example, a capacitance type, a resistive film type, a surface acoustic wave type, or an infrared type. Various methods can be used, such as a pressure-sensitive method, an optical method, or a pressure-sensitive method.

[0147] In this embodiment, a touch panel having a capacitance type sensing element will be described as an example. .

[0148] The capacitive touch sensor includes a surface capacitive touch sensor and a projected capacitive touch sensor. The electrostatic capacitance type includes the self-capacitance type and the mutual capacitance type. This is preferable because it enables simultaneous multi-point detection.

[0149] The touch panel according to one embodiment of the present invention is formed by bonding a display device and a sensing element that are separately manufactured. A structure in which a detector element is formed on one or both of a substrate supporting a display device and an opposing substrate. In addition, various configurations can be applied, such as a configuration in which an electrode or the like is provided to receive the light.

[0150] 10(A) and (B) show an example of a touch panel. FIG. 10(A) shows a touch panel 4 FIG. 10B is a perspective view of the input device 4200. For clarity, only representative components are shown.

[0151] The touch panel 4210 is constructed by bonding a display device and a sensing element that are separately manufactured. The touch panel 4210 has an input device 4200 and a display device, which are superimposed on each other. It is set up as follows.

[0152] The input device 4200 includes a substrate 4263, an electrode 4227, an electrode 4228, and a plurality of wirings 4237. , a plurality of wirings 4238 and a plurality of wirings 4239. For example, the electrode 4227 is The electrode 4228 can be electrically connected to the wiring 4237 or the wiring 4238. The FPC 4272b can be electrically connected to the wires 4239. and electrically connects to each of the plurality of wirings 4238 and wirings 4239. 2b can be provided with IC4273b.

[0153] Alternatively, a touch sensor may be provided between the first substrate 4001 and the second substrate 4006 of the display device. In the case where a touch sensor is provided between the first substrate 4001 and the second substrate 4006, In addition to capacitive touch sensors, optical touch sensors using photoelectric conversion elements are also used. may be applied.

[0154] 11(A) and 11(B) are cross-sections of the region indicated by the dashed line N1-N2 in FIG. 9(B). 11A is a top emission view of the second substrate 4006. FIG. 11B shows a bottom display device that emits light in the direction of a first substrate 4001. The present invention is applicable to both types of display devices. Alternatively, light can be directed toward the first substrate 4001 and the second substrate 4006. It can also be applied to dual emission types that inject.

[0155] The display device shown in FIG. 11(A) and FIG. 11(B) has an electrode 4015, and the electrode 40 15 is electrically connected to the terminal of the FPC 4018 via the anisotropic conductive layer 4019. 11(A) and 11(B), the electrode 4015 is formed on the insulating layer 4112. 4111 and an opening formed in the insulating layer 4110 are electrically connected to the wiring 4014. are connected to the network.

[0156] The electrode 4015 is formed from the same conductive layer as the first electrode layer 4030. The source and drain electrodes of the transistor 4010 and the transistor 4011 are the same. The conductive layer is made of the same material.

[0157] The display unit 215 and the scanning line driver circuit 221a provided on the first substrate 4001 are In FIG. 11(A) and FIG. 11(B), the display unit 215 The transistor 4010 included in the scanning line driver circuit 221a 11(A) and 11(B), the transistor 4 010 and a bottom-gate transistor is illustrated as a transistor 4011. However, it may be a top-gate transistor.

[0158] In FIG. 11(A) and FIG. 11(B), a transistor 4010 and a transistor 401 An insulating layer 4112 is provided over the insulating layer 4112. A partition wall 4510 is formed over the insulating layer 4112. It has been done.

[0159] The transistor 4010 and the transistor 4011 are provided over an insulating layer 4102. The transistor 4010 and the transistor 4011 are formed by insulating layers 4111. The semiconductor device has an electrode 4017 formed thereon. The electrode 4017 functions as a back gate electrode. It is possible.

[0160] The display device shown in FIG. 11(A) and FIG. 11(B) has a capacitor 4020. The capacitor 4020 is a gate electrode formed in the same process as the gate electrode of the transistor 4010. The electrode 4021 is formed in the same process as the source electrode and the drain electrode. These electrodes overlap with an insulating layer 4103 interposed therebetween.

[0161] In general, the capacitance of a capacitor provided in a pixel portion of a display device is determined by the capacitance of a transistor disposed in the pixel portion. Taking into consideration the leakage current of the transistor, etc., the capacitance is set so that the charge can be held for a predetermined period. The capacitance of the capacitor may be set in consideration of the off-current of the transistor and the like.

[0162] The transistor 4010 provided in the display portion 215 is electrically connected to a display device.

[0163] In addition, the display device shown in FIG. 11(A) and FIG. 11(B) includes an insulating layer 4111 and an insulating layer 41 The insulating layer 4111 and the insulating layer 4104 are made of insulating material that is difficult for impurity elements to penetrate. By sandwiching the semiconductor layer of the transistor between the insulating layer 4111 and the insulating layer 4104, It is possible to prevent impurities from entering from the outside.

[0164] In addition, a display device that uses electroluminescence as a display device included in the display device An optical device (EL element) can be applied. An EL element is a light-emitting device that has a light-emitting The EL element has a layer (also called an "EL layer") containing the compound. When a potential difference larger than the threshold voltage is generated, holes are injected into the EL layer from the anode side, and the cathode The injected electrons and holes recombine in the EL layer and are contained in the EL layer. The luminescent material contained therein emits light.

[0165] As the EL element, for example, an organic EL element or an inorganic EL element can be used. LEDs (including mini LEDs and micro LEDs) that use compound semiconductors as light-emitting materials is also an EL element, and LEDs can also be used.

[0166] When a voltage is applied to an organic EL element, electrons are emitted from one electrode and holes are emitted from the other electrode. are injected into the EL layer. Then, the carriers (electrons and holes) recombine. This causes the light-emitting organic compound to form an excited state, which then returns to the ground state. Due to this mechanism, such a light-emitting device is a current-excited light-emitting device. These are called optical devices.

[0167] In addition to the light-emitting compound, the EL layer may be formed by using a material having a high hole-injecting property and a material having a high hole-transporting property. , hole blocking material, material with high electron transporting ability, material with high electron injecting ability, or bipolar The insulating layer may include a material having high electron-transporting and hole-transporting properties.

[0168] The EL layer can be formed by a variety of methods, including deposition (including vacuum deposition), transfer, printing, inkjet, and coating. It can be formed in any way.

[0169] Inorganic EL elements are divided into dispersion-type inorganic EL elements and thin-film-type inorganic EL elements according to their element structure. Dispersion-type inorganic EL elements have a light-emitting layer in which particles of a light-emitting material are dispersed in a binder. The emission mechanism is a donor-acceptor reaction that utilizes the donor and acceptor levels. Thin-film inorganic EL elements are made by sandwiching a light-emitting layer between dielectric layers. The structure is sandwiched between electrodes, and the light emission mechanism utilizes the inner shell electron transition of metal ions. This is a localized emission method that uses

[0170] In addition, a micro LED using a compound semiconductor may be used as the light emitting device. Here, an organic EL element will be used as the light-emitting device for explanation.

[0171] The light-emitting device 4513, which is a display device, is a transistor 4 provided in the display portion 215. The light-emitting device 4513 is electrically connected to the first electrode layer 40. 30, an EL layer 4511, and a second electrode layer 4031. However, the present invention is not limited to this structure. The light emitting device 451 is not required to be aligned in accordance with the direction of the light to be extracted from the light emitting device 4513. The configuration of 3 can be changed as appropriate. In order to extract light emitted from the light emitting device 4513, At least one of a pair of electrodes of the light-emitting device 4513 needs to have light-transmitting properties.

[0172] The partition 4510 is formed using an organic insulating material or an inorganic insulating material. An opening is formed on the first electrode layer 4030 using a resin material, and the side of the opening is continuous. It is preferable to form the inclined surface so as to have a curvature.

[0173] In the case of a top emission type, as shown in FIG. 12(A), wiring 45 is provided on a partition wall 4510. In the top emission type, the second electrode layer 4031 is used as a common electrode. Since the second electrode layer 4031 is formed on the light emitting side, a light-transmitting conductive film is provided. Since a conductive oxide film having a higher resistance than a metal is used for the transparent conductive film, However, the voltage drop may cause the display quality to become non-uniform across the display surface.

[0174] Therefore, the wiring 4515 is formed of a low resistance material such as a metal, and the wiring 4515 and the second electrode The layer 4031 is in direct contact with the wiring 4515. The second electrode layer 4031 is allowed to function as an auxiliary wiring for substantially reducing the resistance of the second electrode layer 4031. This makes it possible to improve the display quality.

[0175] Note that the wiring 4515 may be provided over the insulating layer 4112 as shown in FIG. In this case, the wiring 4515 is formed by utilizing the process of forming the first electrode layer 4030. Alternatively, the gate electrode of a transistor may be formed by using the process for forming the gate electrode of the transistor. Alternatively, the process for forming the source electrode (drain electrode) of the transistor may be used. Alternatively, a wiring 4515 may be formed over the second electrode layer 4031.

[0176] As shown in FIGS. 13A to 13C, the wiring 4515 does not overlap with the light-emitting device 4513. 13A to 13C are top views of a part of the display unit. For example, as shown in FIG. 13(A), the display unit may be arranged so as to extend in the row or column direction. Alternatively, as shown in FIG. 13B, the wiring 4515 can be provided in the row direction and the A wiring 4515 may be provided so as to extend in the column direction. The interval between the light emitting devices 4513 does not have to be the interval between the light emitting devices 4513 (the interval between the pixels). As shown, a plurality of light emitting devices 4513 may be provided at intervals.

[0177] As shown in FIG. 14(A), the EL layer 4511 is made up of a layer 4420, a light-emitting layer 4411, and a layer 443. The layer 4420 can be made of a material having a high electron injection property, for example. and a layer containing a substance with high electron transport properties (electron transport layer). The light-emitting layer 4411 may, for example, comprise a light-emitting compound. The layer 4430 may, for example, comprise a For example, a layer containing a substance with high hole injection properties (hole injection layer) and a layer containing a substance with high hole transport properties (a hole transport layer).

[0178] The structure having the layer 4420, the light-emitting layer 4411, and the layer 4430 provided between a pair of electrodes is It can function as a single light-emitting unit 4600, and in this specification, the configuration of FIG. This configuration is called a single structure.

[0179] As shown in FIG. 14B, a plurality of light-emitting layers (light-emitting layers) are provided between the layer 4420 and the layer 4430. The configuration in which the 4411, 4412, and 4413 are provided is also a variation of the single structure. do.

[0180] Also, as shown in FIG. 14C, a plurality of light-emitting units 4600 (light-emitting units 4600 In the present invention, the charge generating layer 4440 is connected in series to the intermediate layer 4440. In the detailed description, this is called a tandem structure. The blue light-emitting device of the two-layer tandem structure described in the first embodiment In this case, the light-emitting layer 441 of the light-emitting unit 4600a is configured as shown in FIG. 1 and a light-emitting layer that emits blue light is used for the light-emitting layer 4412 of the light-emitting unit 4600b. In this specification and the like, the configuration shown in FIG. 14(C) is referred to as a tandem structure. However, the present invention is not limited to this. For example, a tandem structure may be called a stack structure. stomach.

[0181] The color of light emitted by the light-emitting device 4513 can be red, green, or blue depending on the material that constitutes the EL layer 4511. , cyan, magenta, yellow or white. By providing a microcavity structure to the liquid crystal, the color purity can be further improved.

[0182] A light-emitting device that emits white light is configured to contain two or more types of light-emitting materials in the light-emitting layer. To obtain white light emission, it is preferable to use two or more luminescent materials each having a complementary color. Such a luminescent material can be selected.

[0183] The light-emitting layer contains light-emitting materials that emit light of R (red), G (green), B (blue), Y (yellow), O (orange), etc. It is preferable that the light-emitting element contains two or more luminescent substances. Alternatively, the light-emitting element contains two or more luminescent substances, and each luminescent substance The emitted light preferably includes spectral components of two or more of the following colours: R, G and B.

[0184] In addition, the spectrum of light emitted from a light-emitting device is limited to wavelengths in the visible light region (e.g., 350 nm or less). It is preferable to apply a light emitting device having two or more peaks in the range of 100 nm to 750 nm. Also, the emission spectrum of a material with a peak in the yellow wavelength region is similar to that of a material with a peak in the green and / or is preferably a material that also has a spectral component in the red wavelength region.

[0185] Specifically, as shown in FIGS. 15(A) to 15(D), the EL layer 4511 emits blue light. A light-emitting unit 4610 having a light-emitting substance and a light-emitting substance that emits yellow light, which is the complementary color of blue, are The light emitting units 4620 may be connected in series to form a two-layer tandem structure.

[0186] Alternatively, as shown in FIG. 15B, the light-emitting unit 4620 is sandwiched between the light-emitting units 4610. It may also be a three-layer tandem structure.

[0187] As shown in FIG. 15C, the light-emitting unit 4620 includes a light-emitting layer 4415 and a light-emitting The light-emitting layer 4415 and the light-emitting layer 4416 may have a structure having a different emission color. The layers are different: a layer having a light-emitting material that emits yellow light, a layer having a light-emitting material that emits red light, and Either a layer having a light-emitting substance that emits green light or a layer having a light-emitting substance that emits green light can be used.

[0188] As shown in FIG. 15(D), the light-emitting unit 4620 includes a light-emitting layer 4415 and a light-emitting layer 4420. The light-emitting layer 4415 and the light-emitting layer 441 may be formed as a light-emitting layer. The light-emitting layer 4417 and the light-emitting layer 4416 have different luminescent colors, and are layers having a luminescent material that emits yellow light. a layer having a light-emitting material that emits red light, and a layer having a light-emitting material that emits green light. Either can be used.

[0189] The color gamut can be expanded by adding red and / or green emitting layers to the yellow emitting layer. This makes it possible to improve the display quality.

[0190] The EL layer 4511 may contain an inorganic compound such as quantum dots. The child dots can be used in a light-emitting layer to function as a light-emitting material.

[0191] Quantum dot materials include colloidal quantum dot materials, alloy quantum dot materials, core-sintered quantum dot materials, and The quantum dot materials may be of the group 12. and 16, 13 and 15, or 14 and 16. Or cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium, lead, gallium Quantum dot materials containing elements such as uranium, arsenic, and aluminum may also be used.

[0192] The second electrode is disposed in order to prevent oxygen, hydrogen, moisture, carbon dioxide, etc. from entering the light-emitting device 4513. A protective layer may be formed on the electrode layer 4031 and the partition wall 4510. The protective layer may be silicon nitride. Silicon, silicon oxide nitride, aluminum oxide, aluminum nitride, aluminum oxynitride Aluminum, aluminum oxide nitride, DLC (Diamond Like Carbon), etc. Also, the first substrate 4001, the second substrate 4006, and the seal The space sealed by the material 4005 is sealed with a filler 4514. To prevent exposure to the outside air, a protective film (lamination) with high airtightness and low outgassing is used. packaging (enclosure) in a covering material (such as a protective film or ultraviolet curing resin film) is preferred.

[0193] Filler 4514 can be inert gas such as nitrogen or argon, or ultraviolet curing resin or Thermosetting resins can be used, such as PVC (polyvinyl chloride), acrylic resins, Polyimide, epoxy resin, silicone resin, PVB (polyvinyl butyral) or EVA (ethylene vinyl acetate) can be used. Also, filler 4514 may contain a desiccant.

[0194] The sealing material 4005 is made of glass materials such as glass frit, or two-liquid mixed resin. Resin materials such as heat-curable resin, photocurable resin, and thermosetting resin can be used. Also, the sealant 4005 may contain a desiccant.

[0195] If necessary, a polarizing plate or a circular polarizing plate (including an elliptical polarizing plate) may be installed on the exit surface of the light-emitting device. Optical films such as retardation films (lambda / 4 plates, lambda / 2 plates), and color filters are appropriately installed. In addition, the polarizing plate or the circular polarizing plate may be provided with an anti-reflection film. The convex surface can be used to diffuse reflected light and reduce glare with an anti-glare treatment.

[0196] A first electrode layer and a second electrode layer (a pixel electrode layer, a common electrode layer) that apply a voltage to the display device In the case of the layer (also called the counter electrode layer, etc.), the direction of the light to be extracted and the location where the electrode layer is provided The light transmitting property or the light reflective property can be selected depending on the pattern structure of the electrode layer.

[0197] The first electrode layer 4030 and the second electrode layer 4031 are made of indium oxide containing tungsten oxide. oxide, indium zinc oxide with tungsten oxide, indium oxide with titanium oxide Indium tin oxide, indium tin oxide containing titanium oxide, indium zinc oxide In addition, a conductive material having light transmitting properties, such as indium tin oxide doped with silicon oxide, is used. This can be done.

[0198] The first electrode layer 4030 and the second electrode layer 4031 are made of tungsten (W) or molybdenum. (Mo), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (N b) Tantalum (Ta), Chromium (Cr), Cobalt (Co), Nickel (Ni), Titanium Metals such as titanium (Ti), platinum (Pt), aluminum (Al), copper (Cu), and silver (Ag) or an alloy thereof, or a metal nitride thereof. .

[0199] The first electrode layer 4030 and the second electrode layer 4031 are made of a conductive polymer (conductive polymer). The conductive polymer may be a conductive composition containing a conductive polymer. For example, a so-called π-electron conjugated conductive polymer can be used. or its derivatives, polypyrrole or its derivatives, polythiophene or its derivatives or a copolymer of two or more of aniline, pyrrole and thiophene; Its derivatives are also included.

[0200] In addition, transistors in the driver circuits of display devices are easily damaged by static electricity, etc. It is preferable to provide a protection circuit. The protection circuit is preferably configured using a nonlinear element. I wish.

[0201] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. It is possible.

[0202] (Embodiment 3) In this embodiment mode, the transistors described in the above embodiment modes can be replaced with An example of a transistor that can be used will be described with reference to the drawings.

[0203] The display device of one embodiment of the present invention includes a bottom-gate transistor or a top-gate transistor. The present invention can be fabricated using various types of transistors, such as transistors. The semiconductor layer materials and transistor structures used can be easily replaced to suit the production line. It is possible.

[0204] [Bottom-gate transistor] FIG. 16(A1) shows a channel-protected transistor, which is a type of bottom-gate transistor. 16A is a cross-sectional view of a transistor 810 in the channel length direction. The transistor 810 is formed on the substrate 771. An electrode 746 is provided with an insulating layer 772 interposed therebetween. The semiconductor layer 742 is an insulating layer that can function as a gate electrode. It can function as a gate insulating layer.

[0205] In addition, an insulating layer 741 is provided on a channel formation region of the semiconductor layer 742. 42, and has an electrode 744a and an electrode 744b on the insulating layer 726. Electrode 744a can function as either a source electrode or a drain electrode. A part of the electrode 744a and the electrode 744b can function as the other of the source electrode and the drain electrode. A portion of the pole 744 b is formed on the insulating layer 741 .

[0206] The insulating layer 741 can function as a channel protection layer. By providing the electrode 744a and the electrode 744b, the exposure of the semiconductor layer 742 that occurs during the formation of the electrode 744a and the electrode 744b is suppressed. Therefore, when the electrodes 744a and 744b are formed, the semiconductor layer This can prevent the channel formation region 742 from being etched. According to this, a transistor having good electrical characteristics can be realized.

[0207] The transistor 810 includes an insulating layer 741 and an electrode 744a. A layer 728 is provided, and an insulating layer 729 is provided on the insulating layer 728 .

[0208] When an oxide semiconductor is used for the semiconductor layer 742, at least At least in the portion in contact with the semiconductor layer 742, oxygen is taken from a portion of the semiconductor layer 742, and oxygen vacancies are formed. It is preferable to use a material capable of generating oxygen vacancies in the semiconductor layer 742. The resulting region has an increased carrier concentration, which makes it n-type, and the region is called an n-type region (n + area) Therefore, the region can function as a source region or a drain region. When an oxide semiconductor is used for the semiconductor layer 742, oxygen is taken from the semiconductor layer 742, and oxygen vacancies occur. Examples of materials capable of generating this include tungsten and titanium. Cut.

[0209] The source region and the drain region are formed in the semiconductor layer 742, whereby the electrode 744a In addition, the contact resistance between the electrode 744b and the semiconductor layer 742 can be reduced. The electrical characteristics of the transistor, such as the effective mobility and threshold voltage, can be improved. can.

[0210] When a semiconductor such as silicon is used for the semiconductor layer 742, the semiconductor layer 742 and the electrode 744a between the semiconductor layer 742 and the electrode 744b, and between the semiconductor layer 742 and the electrode 744b, It is preferable to provide a layer that functions as an n-type semiconductor or a p-type semiconductor. It can function as a source or drain region of a transistor.

[0211] The insulating layer 729 has a function of preventing or reducing diffusion of impurities from the outside into the transistor. It is preferable to form the insulating layer 729 using a material having the above structure. It is also possible.

[0212] The transistor 811 shown in FIG. 16A2 has an insulating layer 729 over which a back gate electrode is formed. The transistor 810 differs from the transistor 810 in that it has a functioning electrode 723. It can be formed from the same materials and by the same method as 746.

[0213] In general, the back gate electrode is formed of a conductive layer, and the gate electrode and the back gate electrode form a semiconductor. The back gate electrode is disposed so as to sandwich the channel forming region of the layer. The back gate electrode can function in the same manner as the gate electrode. Alternatively, the potential may be set to ground potential (GND potential) or any other potential. By changing the potential of the gate electrode independently of the potential of the back electrode, the transistor threshold The voltage can be varied.

[0214] In addition, both the electrode 746 and the electrode 723 can function as a gate electrode. Thus, the insulating layer 726, the insulating layer 728, and the insulating layer 729 each serve as a gate insulating layer. The electrode 723 can function as a layer between the insulating layer 728 and the insulating layer 729. It may also be provided in.

[0215] When one of the electrodes 746 and 723 is referred to as a "gate electrode," the other is referred to as a "back electrode." For example, in the transistor 811, the electrode 723 is called a "gate electrode." When the term "electrode" is used, the electrode 746 is referred to as the "back gate electrode." When the transistor 811 is used as a top gate electrode, In addition, either the electrode 746 or the electrode 723 can be considered as a "first The first gate electrode is sometimes referred to as the "first gate electrode" and the other as the "second gate electrode."

[0216] By providing the electrode 746 and the electrode 723 with the semiconductor layer 742 interposed therebetween, 6 and the electrode 723 are set to the same potential, the region in which carriers flow in the semiconductor layer 742 The area becomes larger in the film thickness direction, so the amount of carrier movement increases. As the on-current of the transistor 811 increases, the field effect mobility increases.

[0217] Therefore, the transistor 811 is a transistor having a large on-current relative to its occupancy area. That is, the area occupied by the transistor 811 is set to a desired on-current. According to one aspect of the present invention, the area occupied by a transistor can be reduced. Therefore, according to one embodiment of the present invention, a highly integrated semiconductor device can be realized. It is possible.

[0218] In addition, since the gate electrode and the back gate electrode are formed of a conductive layer, they can be electrically connected to the outside of the transistor. The function of preventing the electric field generated from acting on the semiconductor layer in which the channel is formed (especially static electricity The back gate electrode is larger than the semiconductor layer. By forming a back gate electrode and covering the semiconductor layer with the back gate electrode, the electric field shielding function can be improved. .

[0219] In addition, by forming the back gate electrode using a conductive film having a light-shielding property, This can prevent light from entering the semiconductor layer from the side. This prevents the semiconductor layer from being deteriorated by light. This can prevent degradation of electrical characteristics, such as a shift in the threshold voltage of a transistor. .

[0220] According to one embodiment of the present invention, a transistor with high reliability can be provided. A highly reliable semiconductor device can be realized.

[0221] FIG. 16B1 shows a channel protection transistor 82 having a different structure from that shown in FIG. 16A1. 8 is a cross-sectional view of the transistor 820 in the channel length direction. It has a similar structure, but differs in that an insulating layer 741 covers the edge of a semiconductor layer 742. In addition, an opening is formed by selectively removing a part of the insulating layer 741 that overlaps the semiconductor layer 742. In the portion, the semiconductor layer 742 and the electrode 744a are electrically connected to each other. In another opening formed by selectively removing a portion of the insulating layer 741 overlapping with the semiconductor layer 42, The insulating layer 741 is electrically connected to the electrode 744b. The overlapping region can function as a channel protection layer.

[0222] The transistor 821 shown in FIG. 16B2 has an insulating layer 729 over which a backgate electrode is formed. It differs from transistor 820 in that it has a functioning electrode 723 .

[0223] By providing the insulating layer 741, the semiconductor generated when the electrodes 744a and 744b are formed can be prevented. Therefore, when the electrode 744a and the electrode 744b are formed, the layer 742 can be prevented from being exposed. In addition, the semiconductor layer 742 can be prevented from becoming thin.

[0224] In addition, the transistors 820 and 821 are the same as the transistors 810 and The distance between the electrodes 744a and 746 and the distance between the electrodes 744b and 746 are smaller than the distance between the electrodes 744a and 746 and the distance between the electrodes 744b and 746. Therefore, the distance between the electrodes 744a and 746 is increased. In addition, the parasitic capacitance between the electrode 744b and the electrode 746 can be reduced. According to one embodiment of the present invention, a transistor with favorable electrical characteristics can be realized. Cut.

[0225] The transistor 825 shown in FIG. 16C1 is a bottom-gate transistor. 8 is a cross-sectional view of a channel-etched transistor 825 in the channel length direction. The transistor 825 forms the electrodes 744 a and 744 b without using the insulating layer 741 . Therefore, a part of the semiconductor layer 742 that is exposed when the electrodes 744a and 744b are formed is On the other hand, since the insulating layer 741 is not provided, the transistor production It can improve sexuality.

[0226] A transistor 826 shown in FIG. 16C2 has an insulating layer 729 over which a back gate electrode is formed. It differs from transistor 825 in that it has a functioning electrode 723 .

[0227] In FIG. 17(A1) to (C2), transistors 810, 811, 820, 821, 825, 826 are cross-sectional views in the channel width direction.

[0228] In the structures shown in Figs. 17(B2) and (C2), the gate electrode and the back gate electrode are connected. The gate electrode and the back gate electrode have the same potential. It is sandwiched between a gate electrode and a back gate electrode.

[0229] The length of each of the gate electrode and the back gate electrode in the channel width direction is 2 in the channel width direction, and the entire channel width direction of the semiconductor layer 742 is 726, 741, 728, and 729 are sandwiched between the gate electrode or back gate electrode. This is a structure.

[0230] With this structure, the semiconductor layer 742 included in the transistor is The gate electrode can be electrically surrounded by the electric field of the gate electrode.

[0231] Like the transistor 821 or the transistor 826, the gate electrode and the back gate The electric field of the electrode electrically surrounds the semiconductor layer 742 in which the channel formation region is to be formed. The device structure of the transistor is called the Surrounded channel (S-channel el) structure.

[0232] By adopting an S-channel structure, either one of the gate electrode and the back gate electrode By both, an electric field is effectively applied to the semiconductor layer 742 to induce a channel. This improves the current drive capability of the transistor and makes it possible to obtain high on-current characteristics. In addition, since it is possible to increase the on-current, it is possible to miniaturize transistors. In addition, the S-channel structure makes it possible to mechanically Strength can be increased.

[0233] [Top-gate transistor] The transistor 842 illustrated in FIG. 18A1 is a top-gate transistor. The electrode 744a and the electrode 744b are formed on the insulating layer 728 and the insulating layer 729. The insulating layer 742 is electrically connected to the semiconductor layer 742 in the opening.

[0234] In addition, a part of the insulating layer 726 that does not overlap with the electrode 746 is removed, and the electrode 746 and the remaining insulating layer By introducing impurities into the semiconductor layer 742 using the mask 726, the semiconductor layer 742 The impurity region can be formed in a self-aligned manner. The sintered body 842 has an area where the insulating layer 726 extends beyond the edge of the electrode 746. The impurity concentration in the region of the layer 742 into which the impurity is introduced through the insulating layer 726 is The semiconductor layer 742 is smaller than the region where the impurity is introduced without the insulating layer. A region overlapping the layer 726 but not the electrode 746 is provided with an LDD (Lightly Deposited Diode) layer. A doped drain region is formed.

[0235] The transistor 843 shown in FIG. 18A2 has an electrode 723. 2. The transistor 843 has an electrode 723 formed on a substrate 771. The electrode 723 has a region overlapping with the semiconductor layer 742 with the insulating layer 772 interposed therebetween. can function as a back gate electrode.

[0236] In addition, the transistor 844 shown in FIG. 18B1 and the transistor shown in FIG. As in the case of the electrode 845, the insulating layer 726 may be entirely removed from areas that do not overlap with the electrode 746. In addition, the transistor 846 shown in FIG. 18C1 and the transistor shown in FIG. Insulating layer 726 may be left behind, as may layer 847.

[0237] After forming the electrode 746, the transistors 842 to 847 are also By introducing impurities into the semiconductor layer 742 using the mask, According to one aspect of the present invention, the impurity region can be formed in a self-aligned manner. According to one embodiment of the present invention, a highly integrated transistor can be realized. Therefore, a semiconductor device having a high resistance can be realized.

[0238] In FIG. 19(A1) to (C2), transistors 842, 843, 844, 845, 846, 847 are cross-sectional views in the channel width direction.

[0239] The transistors 843, 845, and 847 are The S-channel structure described above is the same as that described above. However, the present invention is not limited to this. 3. The transistors 845 and 847 are not of S-channel structure. This is also fine.

[0240] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. It is possible.

[0241] (Embodiment 4) Examples of electronic devices that can use the display device according to one embodiment of the present invention include display devices, personal computers, and the like. a personal computer, an image storage device or image reproducing device equipped with a recording medium, a mobile phone, Game consoles, including those of the 1990s, portable data terminals, e-book terminals, video cameras, digital still cameras Cameras such as cameras, goggle-type displays (head-mounted displays), navigation systems, audio playback devices (car audio, digital audio players, etc.), machines, fax machines, printers, printer-combined machines, automated teller machines (ATMs), Examples of such electronic devices include electronic vending machines. Specific examples of such electronic devices are shown in Figures 20(A) to 20(F).

[0242] FIG. 20A shows a digital camera, which includes a housing 961, a shutter button 962, and a microphone 9 63, speaker 967, display unit 965, operation keys 966, zoom lever 968, lens 9 By using the display device of one embodiment of the present invention for the display portion 965, various images can be displayed. The display portion 965 can display the following: It is appropriate to use.

[0243] FIG. 20B shows a digital signage with a large display unit 922. The display device of one embodiment of the present invention is used for the display portion 922. By doing so, it is possible to perform display with high display quality. It is suitable to use the embodiment pixel 10a, pixel 10b or pixel 10c.

[0244] FIG. 20C shows an example of a mobile phone. The mobile phone has a housing 951, a display unit 952, and an operation button 953. , an external connection port 954, a speaker 955, a microphone 956, a camera 957, etc. The mobile phone has a touch sensor on the display unit 952. All operations, such as inputting, can be performed by touching the display unit 952 with a finger or a stylus. In addition, the housing 951 and the display unit 952 are flexible and can be folded as shown in the figure. By using the display device of one embodiment of the present invention for the display portion 952, In particular, the display portion 965 can display various images. It is suitable to use pixel 10a.

[0245] FIG. 20D shows a portable data terminal, which includes a housing 911, a display portion 912, a speaker 913, and a camera. The display unit 912 has a touch panel for inputting and outputting information. By using the display device of one embodiment of the present invention for the display portion 912, various images can be displayed. The display portion 965 can display a pixel 10a according to one embodiment of the present invention. It is appropriate to

[0246] FIG. 20E shows a television set, which includes a housing 971, a display unit 973, operation keys 974, and a speaker 9 The display unit 973 has a touch sensor 975, a communication connection terminal 976, an optical sensor 977, etc. The display device of one embodiment of the present invention is provided in the display portion 973. By using the display unit 973, various images can be displayed. It is suitable to use pixel 10a, pixel 10b, or pixel 10c, which is one embodiment of the pixel shown in FIG.

[0247] FIG. 20F shows an information processing terminal, which includes a housing 901, a display unit 902, a display unit 903, and a sensor. The display unit 902 and the display unit 903 are each made of a single display panel, and are flexible. The housing 901 is also flexible and can be folded as shown in the figure. It can also be used in a flat shape like a tablet. 4 can sense the shape of the housing 901, for example, when the housing is bent. The display of the display unit 902 and the display unit 903 can be switched. 03. By using the display device of one embodiment of the present invention, various images can be displayed. The display portion 902 and the display portion 903 are formed using the pixel 10a according to one embodiment of the present invention. It is appropriate to

[0248] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. It is possible. [Explanation of symbols]

[0249] 10a: pixel, 10b: pixel, 10c: pixel, 11: pixel, 11B: pixel, 11G: pixel , 11R: pixel, 11W: pixel, 12a: gate driver, 12b: gate driver, 1 3: source driver, 101: transistor, 102: transistor, 103: capacitor 106G: light emitting device, 106R: light emitting device, 111: transistor, 112 : transistor, 113: transistor, 114: capacitor, 115: capacitor, 1 16B: light emitting device, 116W: light emitting device, 117: transistor, 118: transistor Transistor, 119: diode, 120: light emitting device, 121: wiring, 122: wiring, 123: Wiring, 124: Wiring, 128: Wiring, 129: Wiring, 130: Wiring, 131: Distribution line, 132: wiring, 215: display section, 221a: scanning line driving circuit, 231a: signal line driving circuit, 232a: signal line driving circuit, 241a: common line driving circuit, 723: electrode, 726: Insulating layer, 728: insulating layer, 729: insulating layer, 741: insulating layer, 742: semiconductor layer, 744 a: electrode, 744b: electrode, 746: electrode, 771: substrate, 772: insulating layer, 810: Transistor, 811: transistor, 820: transistor, 821: transistor, 8 25: transistor, 826: transistor, 842: transistor, 843: transistor sta, 844: transistor, 845: transistor, 846: transistor, 847: Transistor, 901: housing, 902: display unit, 903: display unit, 904: sensor, 91 1: Housing, 912: Display, 913: Speaker, 919: Camera, 921: Pillar, 922: Display unit, 951: housing, 952: display unit, 953: operation button, 954: external connection port , 955: speaker, 956: microphone, 957: camera, 961: housing, 962: shutter button, 963: microphone, 965: display unit, 966: operation keys, 967: speaker, 968: Zoom lever, 969: Lens, 971: Housing, 973: Display, 974: Operation Key, 975: speaker, 976: communication connection terminal, 977: optical sensor, 4001: substrate , 4005: sealing material, 4006: substrate, 4010: transistor, 4011: transistor sta, 4014: wiring, 4015: electrode, 4017: electrode, 4018: FPC, 4019 : anisotropic conductive layer, 4020: capacitor, 4021: electrode, 4030: electrode layer, 4031 : electrode layer, 4041: printed circuit board, 4042: integrated circuit, 4102: insulating layer, 4103 : insulating layer, 4104: insulating layer, 4110: insulating layer, 4111: insulating layer, 4112: insulating layer , 4200: input device, 4210: touch panel, 4227: electrode, 4228: electrode, 4 237: Wiring, 4238: Wiring, 4239: Wiring, 4263: Board, 4272b: FPC , 4273b: IC, 4411: light-emitting layer, 4412: light-emitting layer, 4413: light-emitting layer, 441 5: light-emitting layer, 4416: light-emitting layer, 4417: light-emitting layer, 4420: layer, 4430: layer, 45 10: partition wall, 4511: EL layer, 4513: light-emitting device, 4514: filler, 4515 : Wiring, 4600: Light emitting unit, 4600a: Light emitting unit, 4600b: Light emitting unit 4610: Light Emitting Unit, 4620: Light Emitting Unit

Claims

1. A display unit and a scanning line driver circuit are included. the display unit includes wiring extending in a row direction and a column direction and always electrically connected to a cathode of a light-emitting device, and a plurality of pixels arranged in a first region surrounded by the wiring; one of the pixels includes a first transistor and the light emitting device in tandem; A display device in which a plurality of the first regions are arranged in a matrix on the display unit, a first conductive film functioning as one of a source electrode and a drain electrode of the first transistor; a second conductive film serving as the other of the source electrode and the drain electrode of the first transistor; a first insulating film having a region disposed above the first conductive film and a region disposed above the second conductive film; a third conductive film having a region in contact with an upper surface of the first insulating film, always in electrical conduction with the first conductive film, and functioning as an anode of the light-emitting device; a fourth conductive film having a region in contact with an upper surface of the first insulating film and included in the wiring; a partition wall having a region disposed above the first insulating film, a region disposed above the third conductive film, and a region disposed above the fourth conductive film; a fifth conductive film having a region disposed above the third conductive film, a region disposed above the fourth conductive film, and a region disposed above the partition wall, and having a function as a cathode of the light-emitting device; having the scanning line driver circuit includes a second transistor that does not overlap with the partition wall; the fifth conductive film is always electrically connected to the fourth conductive film through the opening of the partition wall, The opening is disposed in the display unit. Display device.

2. A display unit and a scanning line driver circuit, the display unit includes wiring extending in a row direction and a column direction and always electrically connected to a cathode of a light-emitting device, and a plurality of pixels arranged in a first region surrounded by the wiring; one of the pixels includes a first transistor and the light emitting device in tandem; A display device in which a plurality of the first regions are arranged in a matrix on the display unit, a first conductive film functioning as one of a source electrode and a drain electrode of the first transistor; a second conductive film serving as the other of the source electrode and the drain electrode of the first transistor; a first insulating film having a region disposed above the first conductive film and a region disposed above the second conductive film; a third conductive film having a region in contact with an upper surface of the first insulating film, always in electrical conduction with the first conductive film, and functioning as an anode of the light-emitting device; a fourth conductive film having a region in contact with an upper surface of the first insulating film and included in the wiring; a partition wall having a region disposed above the first insulating film, a region disposed above the third conductive film, and a region disposed above the fourth conductive film; a fifth conductive film having a region disposed above the third conductive film, a region disposed above the fourth conductive film, and a region disposed above the partition wall, and having a function as a cathode of the light-emitting device; having the scanning line driver circuit includes a second transistor that does not overlap with the partition wall and does not overlap with the fourth conductive film; the fifth conductive film is always electrically connected to the fourth conductive film through the opening of the partition wall, The opening is disposed in the display unit. Display device.

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