Semiconductor light emitting device

Abstract

To improve light extraction efficiency and reliability of semiconductor light emitting devices.SOLUTION: A semiconductor light emitting device 10 comprises: a package substrate 14; a semiconductor light emitting element 12 that is flip-chip bonded on the package substrate 14; a frame 16 provided around the semiconductor light emitting element 12 on the package substrate 14; and a sealing member 18 covering the top surface 12a of the semiconductor light emitting element 12 on the package substrate 14 and covering the top surface 16a of the frame 16 and having translucency at the emission wavelength of the semiconductor light emitting element 12. The top surface 12a of the semiconductor light emitting element 12 has a plurality of corners 46a-46d, and the distance d1 from each of the plurality of corners 46a-46d to the frame 16 is smaller than the width w1 of the top surface 16a of the frame 16.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a semiconductor light emitting device. [Background technology]

[0002] There is known a semiconductor light emitting device in which a semiconductor light emitting element bonded onto a package substrate is sealed with resin. For example, a technology has been proposed to improve the light extraction efficiency by forming the sealing resin into a dome shape that is convex upward (for example, see Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2017-59754 A Summary of the Invention [Problem to be solved by the invention]

[0004] When the sealing member is formed in a dome shape, it is necessary to increase the thickness of the sealing member located above the semiconductor light emitting element. If the amount of filling of the sealing member is increased in order to make the sealing member thicker, the distortion caused by the difference in material between the sealing member and the package substrate increases, and the sealing member becomes more likely to peel off or crack.

[0005] The present invention has been made in view of these problems, and has an object to provide a technique for improving the light extraction efficiency and reliability of a semiconductor light emitting device. [Means for solving the problem]

[0006] A semiconductor light emitting device according to an embodiment of the present invention includes a package substrate, a semiconductor light emitting element flip-chip bonded onto the package substrate, a frame body provided around the semiconductor light emitting element on the package substrate, and a sealing member covering an upper surface of the semiconductor light emitting element on the package substrate and covering an upper surface of the frame body, the sealing member having translucency at the emission wavelength of the semiconductor light emitting element. The upper surface of the semiconductor light emitting element has a plurality of corners, and the distance from each of the plurality of corners to the frame body is smaller than the width of the upper surface of the frame body.

[0007] According to the present invention, it is possible to improve the light extraction efficiency and reliability of a semiconductor light emitting device. [Brief description of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view illustrating a schematic configuration of a semiconductor light emitting device according to a first embodiment. [Diagram 2] 1 is a top view illustrating a schematic configuration of a semiconductor light emitting device according to a first embodiment. [Diagram 3] 5 is a cross-sectional view illustrating a schematic configuration of a semiconductor light-emitting device according to a second embodiment. [Figure 4] FIG. 11 is a top view illustrating a schematic configuration of a semiconductor light emitting device according to a third embodiment. [Diagram 5] FIG. 13 is a top view illustrating a schematic configuration of a semiconductor light emitting device according to a fourth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, the embodiments of the present invention will be described in detail with reference to the drawings. In the description, the same elements are given the same reference numerals, and duplicated descriptions will be omitted as appropriate. In addition, in order to facilitate understanding of the description, the dimensional ratios of the components in each drawing do not necessarily match the dimensional ratios of the actual light-emitting element.

[0010] (First embodiment) 1 is a cross-sectional view that illustrates a schematic configuration of a semiconductor light emitting device 10 according to the first embodiment. The semiconductor light emitting device 10 includes a semiconductor light emitting element 12, a package substrate 14, a frame 16, and a sealing member 18.

[0011] The semiconductor light emitting element 12 is a semiconductor light emitting element configured to emit ultraviolet light with a central wavelength λ of about 360 nm or less. In order to output ultraviolet light with such a wavelength, an aluminum gallium nitride (AlGaN)-based semiconductor material with a band gap of about 3.4 eV or more is used. In this embodiment, in particular, a DUV-LED (Deep UltraViolet-Light Emitting Diode) chip that emits deep ultraviolet light with a central wavelength λ of about 240 nm to 320 nm is shown.

[0012] The semiconductor light emitting element 12 includes a light-transmitting substrate 20, a semiconductor layer 22, an anode electrode 24, a cathode electrode 26, and a protective layer .

[0013] The light-transmitting substrate 20 is made of a material that is transparent to ultraviolet light emitted by the semiconductor light-emitting element 12. The light emitted by the semiconductor layer 22 is output from the light-transmitting substrate 20 to the outside of the semiconductor light-emitting element 12. The light-transmitting substrate 20 is made of, for example, sapphire (Al2O3). The light-transmitting substrate 20 has an upper surface 20a, a lower surface 20b, and a side surface 20c. The upper surface 20a and the lower surface 20b are, for example, rectangular. The size of the upper surface 20a and the lower surface 20b is not particularly limited, but is, for example, 1 mm square. The thickness t from the upper surface 20a to the lower surface 20b of the light-transmitting substrate 20 is, for example, 100 μm or more, 200 μm or more, or 300 μm or more, and is, for example, 1000 μm or less, 700 μm or less, or 500 μm or less.

[0014] The semiconductor layer 22 is provided under the light-transmitting substrate 20, and is provided on the lower surface 20b of the light-transmitting substrate 20. The semiconductor layer 22 includes, for example, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The semiconductor layer 22 is made of an AlGaN-based semiconductor material. The AlGaN-based semiconductor material is In 1-x-y Al x Ga yIt can be represented by the composition of N(0 < x + y ≤ 1, 0 < x < 1, 0 < y < 1). The semiconductor layer 22 is covered by the protective layer 28.

[0015] The anode electrode 24 includes a first contact electrode 24a and a first pad electrode 24b. The first contact electrode 24a is an internal electrode that contacts the semiconductor layer 22 and contacts the p-type semiconductor layer included in the semiconductor layer 22. The first contact electrode 24a is composed of a metal layer such as Rh, for example. The first contact electrode 24a is covered by the protective layer 28. The first pad electrode 24b is an external electrode exposed outside the protective layer 28 and is electrically connected to the first contact electrode 24a through an opening provided in the protective layer 28. The first pad electrode 24b is composed of a metal layer such as Ni / Au.

[0016] The cathode electrode 26 includes a second contact electrode 26a and a second pad electrode 26b. The second contact electrode 26a is an internal electrode that contacts the semiconductor layer 22 and contacts the n-type semiconductor layer included in the semiconductor layer 22. The second contact electrode 26a is composed of a metal layer such as Ti / Al, for example. The second contact electrode 26a is covered by the protective layer 28. The second pad electrode 26b is an external electrode exposed outside the protective layer 28 and is electrically connected to the second contact electrode 26a through an opening provided in the protective layer 28. The second pad electrode 26b is composed of a metal layer such as Ni / Au.

[0017] The protective layer 28 covers the semiconductor layer 22, the first contact electrode 24a, and the second contact electrode 26a. The protective layer 28 is composed of a dielectric material such as an oxide or a nitride, and is composed of, for example, silicon oxide (SiO2), aluminum oxide (Al2O3), silicon nitride (SiN), etc. The protective layer 28 may be composed of a laminate of a plurality of protective layers having different materials.

[0018] The package substrate 14 has a flat plate shape and has a bonding surface 14a and a back surface 14b. The package substrate 14 includes a first bonding electrode 30 and a second bonding electrode 32 provided on the bonding surface 14a. The package substrate 14 includes a first mounting electrode 34 and a second mounting electrode 36 provided on the back surface 14b. The first bonding electrode 30 is electrically connected to the first mounting electrode 34 inside the package substrate 14. The second bonding electrode 32 is electrically connected to the second mounting electrode 36 inside the package substrate 14. The package substrate 14 is made of, for example, an inorganic material, such as a ceramic material such as alumina (Al2O3), aluminum nitride (AlN), silicon nitride (SiN), or silicon carbide (SiC).

[0019] The semiconductor light emitting element 12 is flip-chip bonded onto the package substrate 14. The semiconductor light emitting element 12 is bonded to a first bonding electrode 30 and a second bonding electrode 32. The semiconductor light emitting element 12 is bonded to the package substrate 14 via a first bonding portion 38 and a second bonding portion 40. The first bonding portion 38 is provided between the anode electrode 24 (first pad electrode 24b) and the first bonding electrode 30, and electrically connects the anode electrode 24 and the first bonding electrode 30. The second bonding portion 40 is provided between the cathode electrode 26 (second pad electrode 26b) and the second bonding electrode 32, and electrically connects the cathode electrode 26 and the second bonding electrode 32.

[0020] The first bonding portion 38 and the second bonding portion 40 are, for example, stud bumps. The first bonding portion 38 and the second bonding portion 40 are formed, for example, by melting the tip of a metal wire such as Au to form a ball shape, and pressing the ball against the first bonding electrode 30 and the second bonding electrode 32, respectively. The first bonding portion 38 and the second bonding portion 40 formed on the first bonding electrode 30 and the second bonding electrode 32 are bonded to the anode electrode 24 (first pad electrode 24b) and the cathode electrode 26 (second pad electrode 26b), respectively, by, for example, ultrasonic bonding.

[0021] In a state in which the semiconductor light emitting element 12 is bonded to the package substrate 14, the height hb from the package substrate 14 (bonding surface 14a) to the lower surface 20b of the light-transmitting substrate 20 is, for example, smaller than the thickness t of the light-transmitting substrate 20, for example, smaller than half the thickness t / 2 of the light-transmitting substrate 20. The height hb from the package substrate 14 to the lower surface 20b of the light-transmitting substrate 20 is, for example, 200 μm or less, 100 μm or less, 50 μm or less, or 30 μm or less. The height hb from the package substrate 14 to the lower surface 20b of the light-transmitting substrate 20 is, for example, 10 μm or more, 15 μm or more, 20 μm or more, or 25 μm or more.

[0022] When the semiconductor light emitting element 12 is bonded to the package substrate 14, the height ha from the package substrate 14 (bonding surface 14a) to the upper surface 12a of the semiconductor light emitting element 12 (upper surface 20a of the light-transmitting substrate 20) is, for example, 100 μm or more, 200 μm or more, 300 μm or more, or 400 μm or more. The height ha from the package substrate 14 to the upper surface 12a of the semiconductor light emitting element 12 is, for example, 1000 μm or less, 700 μm or less, 600 μm or less, or 500 μm or less.

[0023] The frame body 16 is provided around the semiconductor light emitting element 12 on the package substrate 14. The frame body 16 is provided, for example, along the outer periphery of the package substrate 14, over the entire periphery of the package substrate 14. The frame body 16 may be provided away from the outer periphery of the package substrate 14, or may be provided at a position shifted inward from the outer periphery of the package substrate 14. The frame body 16 is formed, for example, from the same material as the package substrate 14, and molded integrally with the package substrate 14. The frame body 16 may be formed from a material different from that of the package substrate 14. The frame body 16 may be molded separately from the package substrate 14, and may be bonded to the bonding surface 14a of the package substrate 14 by any bonding material.

[0024] The frame 16 has an upper surface 16a. The upper surface 16a of the frame 16 is, for example, a flat surface. The height h1 of the upper surface 16a of the frame 16 is equal to or greater than the height ha of the upper surface 12a of the semiconductor light emitting element 12 (the upper surface 20a of the light-transmitting substrate 20). The height h1 of the upper surface 16a of the frame 16 is, for example, 200 μm or more, 300 μm or more, 400 μm or more, or 500 μm or more. The height h1 of the upper surface 16a of the frame 16 is, for example, 1500 μm or less, 1200 μm or less, 1000 μm or less, or 800 μm or less. The difference Δh (=h1-ha) between the height h1 of the upper surface 16a of the frame 16 and the height ha of the upper surface 12a of the semiconductor light emitting element 12 is, for example, 50 μm or more, 100 μm or more, or 200 μm or more, and is, for example, 500 μm or less, 400 μm or less, or 300 μm or less.

[0025] The frame 16 has an inner peripheral surface 16b and an outer peripheral surface 16c. The width w1 of the upper surface 16a of the frame 16 (for example, the width w1 from the inner peripheral surface 16b to the outer peripheral surface 16c) is, for example, 100 μm or more, 200 μm or more, 300 μm or more, or 400 μm or more. The width w1 of the upper surface 16a of the frame 16 is, for example, 1000 μm or less, 800 μm or less, 700 μm or less, or 600 μm or less. The distance d1 from the semiconductor light emitting element 12 (the side surface 20c of the light-transmitting substrate 20) to the frame 16 (the inner peripheral surface 16b) is smaller than the width w1 of the frame 16. The distance d1 from the semiconductor light emitting element 12 to the frame 16 is, for example, 300 μm or less, 200 μm or less, 150 μm or less, or 100 μm or less. The distance d1 from the semiconductor light emitting element 12 to the frame 16 is, for example, 10 μm or more, 50 μm or more, 100 μm or more, or 150 μm or more.

[0026] The sealing member 18 covers the semiconductor light emitting element 12 on the package substrate 14. The sealing member 18, for example, fills an area inside the frame body 16. The sealing member 18 contacts the bonding surface 14a of the package substrate 14, and contacts the first bonding electrode 30 and the second bonding electrode 32. The sealing member 18 contacts the side surface 20c and the top surface 20a of the light-transmitting substrate 20. The sealing member 18 covers the top surface 16a of the frame body 16. The sealing member 18 is made of a material having translucency at the emission wavelength of the semiconductor light emitting element 12. The sealing member 18 has an internal transmittance of 50% or more at the peak emission wavelength of the semiconductor light emitting element 12, and is preferably 70% or more, 80% or more, or 90% or more. The sealing member 18 is made of a material having a lower refractive index than the light-transmitting substrate 20. The sealing member 18 is made of, for example, a silicone resin or a fluororesin. The sealing member 18 may be made of an inorganic material such as quartz or a glass material instead of a resin. The sealing member 18 is configured not to contain a phosphor, for example.

[0027] The sealing member 18 has, for example, a lens shape or a dome shape that is convex upward. The top 42 of the sealing member 18 is located at the top of the semiconductor light emitting element 12 that is bonded to the package substrate 14, for example. The sealing member 18 is formed so as to cover the entire upper surface 12a of the semiconductor light emitting element 12. The height h2 from the upper surface 12a of the semiconductor light emitting element 12 to the top 42 of the sealing member 18 is, for example, 100 μm or more, 200 μm or more, or 300 μm or more. The height h2 from the upper surface 12a of the semiconductor light emitting element 12 to the top 42 of the sealing member 18 is, for example, 1000 μm or less, 800 μm or less, or 500 μm or less. The height h2 from the upper surface 12a of the semiconductor light emitting element 12 to the top 42 of the sealing member 18 is, for example, smaller than the height h1 of the frame 16. The height h2 from the upper surface 12a of the semiconductor light emitting element 12 to the top 42 of the sealing member 18 is, for example, smaller than the height ha of the semiconductor light emitting element 12.

[0028] 2 is a top view showing a schematic configuration of the semiconductor light emitting device 10 according to the first embodiment. The semiconductor light emitting device 10 further includes a protective element 50. The protective element 50 is a diode, such as a Zener diode, that protects the semiconductor light emitting element 12 from surge currents and static electricity. The protective element 50 is bonded to the bonding surface 14a of the package substrate 14. The protective element 50 is bonded to, for example, the first bonding electrode 30 and the second bonding electrode 32, and is connected in parallel to the semiconductor light emitting element 12. An upper surface 50a of the protective element 50 is covered by a sealing member 18.

[0029] The frame body 16 is configured such that the inner peripheral surface 16b and the outer peripheral surface 16c are rectangular. The frame body 16 has a rectangular shape in which the vertical size in which the semiconductor light emitting element 12 and the protective element 50 are arranged is relatively large and the horizontal size is relatively small. The inner vertical width w2 of the frame body 16 is larger than the inner horizontal width w3 of the frame body 16. The inner vertical width w2 of the frame body 16 is, for example, 1.1 times or more and 2 times or less than the inner horizontal width w3 of the frame body 16.

[0030] The upper surface 12a of the semiconductor light emitting element 12 has a plurality of sides 44a, 44b, 44c, 44d and a plurality of corners 46a, 46b, 46c, 46d. In the example of Fig. 2, the upper surface 12a of the semiconductor light emitting element 12 is rectangular and has four sides 44a to 44d and four corners 46a to 46d. The upper surface 12a of the semiconductor light emitting element 12 may have a polygonal shape other than a quadrangle, such as a triangle, a hexagon, or an octagon, instead of a rectangle.

[0031] The semiconductor light emitting element 12 is disposed such that each of the multiple corners 46a to 46d is close to the inner circumferential surface 16b of the frame 16. The semiconductor light emitting element 12 is disposed such that each of the three sides 44a to 44c is close to the inner circumferential surface 16b. The distance d1 from each of the multiple corners 46a to 46d to the frame 16 is, for example, smaller than the width w1 of the frame 16. The distance d1 from each of the multiple corners 46a to 46d to the frame 16 is, for example, 300 μm or less, 200 μm or less, 150 μm or less, or 100 μm or less. The distance d1 from each of the multiple corners 46a to 46d to the frame 16 is, for example, 10 μm or more, 50 μm or more, 100 μm or more, or 150 μm or more.

[0032] The protective element 50 is disposed close to one side 44d of the semiconductor light emitting element 12. The distance d2 from the semiconductor light emitting element 12 to the protective element 50 is, for example, smaller than the width w1 of the frame 16. The distance d2 from the semiconductor light emitting element 12 to the protective element 50 is, for example, approximately the same as the distance d1 from the semiconductor light emitting element 12 to the frame 16. The distance d2 from the semiconductor light emitting element 12 to the protective element 50 is, for example, 300 μm or less, 200 μm or less, 150 μm or less, or 100 μm or less. The distance d2 from the semiconductor light emitting element 12 to the protective element 50 is, for example, 10 μm or more, 50 μm or more, 100 μm or more, or 150 μm or more.

[0033] The protective element 50 is disposed close to the frame 16. The distance d3 from the protective element 50 to the frame 16 is, for example, smaller than the width w1 of the frame 16. The distance d3 from the protective element 50 to the frame 16 is, for example, approximately the same as the distance d1 from the semiconductor light emitting element 12 to the frame 16 or the distance d2 from the semiconductor light emitting element 12 to the protective element 50. The distance d3 from the protective element 50 to the frame 16 is, for example, 300 μm or less, 200 μm or less, 150 μm or less, or 100 μm or less. The distance d3 from the protective element 50 to the frame 16 is, for example, 10 μm or more, 50 μm or more, 100 μm or more, or 150 μm or more.

[0034] According to this embodiment, by reducing the distance d1 from the semiconductor light emitting element 12 to the frame body 16, it is possible to reduce the amount of sealing member 18 provided between the semiconductor light emitting element 12 and the frame body 16. In particular, it is possible to reduce the amount of sealing member 18 provided between each of the multiple corners 46a to 46d of the semiconductor light emitting element 12 and the frame body 16. As a result, it is possible to reduce the stress applied to the sealing member 18 due to the difference in material between the sealing member 18 and the frame body 16, thereby suppressing the occurrence of peeling or cracks in the sealing member 18, and improving the reliability of the semiconductor light emitting device 10.

[0035] According to this embodiment, the amount of sealing member 18 provided around the protective element 50 can be reduced by reducing the distance d2 from the semiconductor light emitting element 12 to the protective element 50 and reducing the distance d3 from the protective element 50 to the frame 16. As a result, the stress applied to the sealing member 18 due to the difference in material between the sealing member 18 and the frame 16 can be reduced, preventing peeling or cracking of the sealing member 18, and improving the reliability of the semiconductor light emitting device 10.

[0036] In the plan view of FIG. 2, the area S occupying the inside of the frame body 16 (the inner peripheral surface 16b of the frame body 16) may be equal to or less than twice the total area (P+Q) of the area P occupying the upper surface 12a of the semiconductor light emitting element 12 and the area Q occupying the upper surface 50a of the protective element 50 (i.e., S≦2×[P+Q]). In other words, the area (SPQ) of the portion inside the frame body 16 that is different from the semiconductor light emitting element 12 and the protective element 50 may be smaller than the total area (P+Q) of the semiconductor light emitting element 12 and the protective element 50. In this case, the amount of the sealing member 18 provided around (for example, on the side) the semiconductor light emitting element 12 and the protective element 50 can be reduced relative to the amount of the sealing member 18 covering the upper surface 12a of the semiconductor light emitting element 12 and the upper surface 50a of the protective element 50. As a result, the stress applied to the sealing member 18 due to the difference in material between the sealing member 18 and the frame body 16 can be reduced, and peeling or cracking of the sealing member 18 can be suppressed, thereby improving the reliability of the semiconductor light emitting device 10.

[0037] In the plan view of FIG. 2, the area S occupying the inside of the frame body 16 (the inner peripheral surface 16b of the frame body 16) may be equal to or less than twice the area P occupying the upper surface 12a of the semiconductor light emitting element 12 (i.e., S≦2×P). In other words, the area (SP) of the portion inside the frame body 16 that is different from the semiconductor light emitting element 12 may be smaller than the area P of the semiconductor light emitting element 12. In this case, the amount of the sealing member 18 provided around (for example, on the side) the semiconductor light emitting element 12 can be reduced relative to the amount of the sealing member 18 covering the upper surface 12a of the semiconductor light emitting element 12. As a result, the stress applied to the sealing member 18 due to the difference in material between the sealing member 18 and the frame body 16 can be reduced, and peeling or cracking of the sealing member 18 can be suppressed, thereby improving the reliability of the semiconductor light emitting device 10.

[0038] According to this embodiment, since the sealing member 18 is provided so as to cover the upper surface 16a of the frame body 16, even when the distance d1 from the semiconductor light emitting element 12 to the frame body 16 is reduced, the sealing performance of the semiconductor light emitting element 12 by the sealing member 18 can be improved. In particular, since the width w1 of the upper surface 16a of the frame body 16 is greater than the distance d1 from the semiconductor light emitting element 12 to the frame body 16, the sealing performance can be improved by the sealing member 18 covering the upper surface 16a of the frame body 16. As a result, the reliability of the semiconductor light emitting device 10 can be improved.

[0039] Second embodiment 3 is a cross-sectional view illustrating a schematic configuration of a semiconductor light emitting device 10A according to the second embodiment. The semiconductor light emitting device 10A differs from the above-described first embodiment in that a gap 60 is provided between the package substrate 14 and the sealing member 18. The second embodiment will be described below, focusing on the differences from the first embodiment, and a description of the commonalities will be omitted as appropriate.

[0040] The semiconductor light emitting device 10A includes a semiconductor light emitting element 12, a package substrate 14, a frame 16, and a sealing member 18. The semiconductor light emitting device 10A may further include a protective element 50 shown in Fig. 2. The semiconductor light emitting element 12, the package substrate 14, the frame 16, and the protective element 50 may be configured in the same manner as in the first embodiment.

[0041] The sealing member 18 can be configured similarly to the first embodiment, except that a gap 60 is provided between the sealing member 18 and the package substrate 14. The sealing member 18 is provided, for example, away from the package substrate 14 and does not contact the bonding surface 14a of the package substrate 14. The sealing member 18 does not have to contact the first bonding electrode 30 and the second bonding electrode 32. The sealing member 18 may be in partial contact with the package substrate 14. For example, at least one of the bonding surface 14a of the package substrate 14, the first bonding electrode 30, and the second bonding electrode 32 may have a portion in contact with the sealing member 18 and a portion not in contact with the sealing member 18.

[0042] The sealing member 18 may be in partial contact with the semiconductor light emitting element 12. The sealing member 18 may not be in contact with, for example, the protective layer 28. The sealing member 18 may be in contact with the entire side surface 20c of the light-transmitting substrate 20, or may be in contact with only a portion of the side surface 20c of the light-transmitting substrate 20. In other words, the side surface 20c of the light-transmitting substrate 20 may have a portion in contact with the sealing member 18 and a portion not in contact with the sealing member 18. The sealing member 18 is in contact with the entire upper surface 20a of the light-transmitting substrate 20.

[0043] The sealing member 18 may be in partial contact with the frame body 16. The sealing member 18 may be in contact with, for example, only a part of the inner circumferential surface 16b of the frame body 16. In other words, the inner circumferential surface 16b of the frame body 16 may have a portion in contact with the sealing member 18 and a portion not in contact with the sealing member 18. The sealing member 18 may be in contact with substantially the entire upper surface 16a of the frame body 16, or may be in contact with 70% or more, 80% or more, or 90% or more of the area of ​​the upper surface 16a of the frame body 16.

[0044] According to the present embodiment, by providing the sealing member 18 away from the package substrate 14, it is possible to reduce the stress applied to the sealing member 18 due to the difference in material between the package substrate 14 and the sealing member 18. As a result, it is possible to suppress peeling or cracking of the sealing member 18, thereby improving the reliability of the semiconductor light emitting device 10A.

[0045] According to this embodiment, the contact area between the sealing member 18 and the inner peripheral surface 16b of the frame 16 is reduced, which reduces the stress applied to the sealing member 18 due to the difference in material between the frame 16 and the sealing member 18. As a result, peeling or cracking of the sealing member 18 can be suppressed, improving the reliability of the semiconductor light emitting device 10A.

[0046] Third embodiment 4 is a top view showing a schematic configuration of a semiconductor light emitting device 10B according to a third embodiment. The semiconductor light emitting device 10B differs from the first embodiment in that the semiconductor light emitting element 12 and the protective element 50 are disposed obliquely with respect to the package substrate 14 and the frame body 16. The third embodiment will be described below, focusing on the differences with the first embodiment, and a description of the commonalities will be omitted as appropriate.

[0047] The semiconductor light emitting device 10B includes a semiconductor light emitting element 12, a package substrate 14, a frame 16, a sealing member 18, and a protective element 50. The semiconductor light emitting element 12 and the protective element 50 can be configured in the same manner as in the first embodiment.

[0048] The package substrate 14 and the frame 16 are configured to be square-shaped, and are configured to have approximately the same size in the vertical and horizontal directions. The inner peripheral surface 16b and the outer peripheral surface 16c of the frame 16 are configured to be square-shaped, and are configured to have approximately the same size in the vertical and horizontal directions. The inner vertical width w2 of the frame 16 is, for example, 0.9 to 1.1 times the inner horizontal width w3 of the frame 16. The package substrate 14 and the frame 16 may be configured to be rectangular.

[0049] The semiconductor light emitting element 12 is disposed inside the frame 16 in an orientation rotated at a predetermined angle θ with respect to the package substrate 14 and the frame 16. Each of the multiple sides 44a to 44d of the semiconductor light emitting element 12 is disposed so as to have a predetermined angle θ with respect to the inner peripheral surface 16b of the frame 16. The predetermined angle θ is, for example, not less than 10 degrees and not more than 80 degrees, for example, not less than 30 degrees and not more than 600 degrees. In the example shown in FIG. 4, the predetermined angle θ is 45 degrees.

[0050] The semiconductor light emitting element 12 is disposed such that each of the multiple corners 46a to 46d is close to the inner peripheral surface 16b of the frame 16. The distance d1 from each of the multiple corners 46a to 46d to the frame 16 is, for example, smaller than the width w1 of the frame 16. The distance d1 from each of the multiple corners 46a to 46d to the frame 16 is, for example, 300 μm or less, 200 μm or less, 150 μm or less, or 100 μm or less. The distance d1 from each of the multiple corners 46a to 46d to the frame 16 is, for example, 10 μm or more, 50 μm or more, 100 μm or more, or 150 μm or more.

[0051] The protective element 50 is disposed inside the frame body 16 in a direction rotated at a predetermined angle θ with respect to the package substrate 14 and the frame body 16, similar to the semiconductor light emitting element 12. The protective element 50 is disposed close to one side 44d of the semiconductor light emitting element 12. The distance d2 from the semiconductor light emitting element 12 to the protective element 50 is, for example, smaller than the width w1 of the frame body 16. The distance d2 from the semiconductor light emitting element 12 to the protective element 50 is, for example, approximately the same as the distance d1 from the semiconductor light emitting element 12 to the frame body 16. The distance d2 from the semiconductor light emitting element 12 to the protective element 50 is, for example, 300 μm or less, 200 μm or less, 150 μm or less, or 100 μm or less. The distance d2 from the semiconductor light emitting element 12 to the protective element 50 is, for example, 10 μm or more, 50 μm or more, 100 μm or more, or 150 μm or more.

[0052] The protective element 50 is disposed close to the frame 16. The distance d3 from the protective element 50 to the frame 16 is, for example, smaller than the width w1 of the frame 16. The distance d3 from the protective element 50 to the frame 16 is, for example, approximately the same as the distance d1 from the semiconductor light emitting element 12 to the frame 16 or the distance d2 from the semiconductor light emitting element 12 to the protective element 50. The distance d3 from the protective element 50 to the frame 16 is, for example, 300 μm or less, 200 μm or less, 150 μm or less, or 100 μm or less. The distance d3 from the protective element 50 to the frame 16 is, for example, 10 μm or more, 50 μm or more, 100 μm or more, or 150 μm or more.

[0053] In the present embodiment as well, by reducing the distance d1 from the semiconductor light emitting element 12 to the frame body 16, it is possible to reduce the amount of sealing member 18 provided between the semiconductor light emitting element 12 and the frame body 16. In particular, it is possible to reduce the amount of sealing member 18 provided between each of the multiple corners 46a to 46d of the semiconductor light emitting element 12 and the frame body 16. As a result, it is possible to reduce the stress applied to the sealing member 18 due to the difference in material between the sealing member 18 and the frame body 16, thereby suppressing peeling or cracking of the sealing member 18, and improving the reliability of the semiconductor light emitting device 10.

[0054] In this embodiment as well, the amount of sealing member 18 provided around the protective element 50 can be reduced by reducing the distance d2 from the semiconductor light emitting element 12 to the protective element 50 and reducing the distance d3 from the protective element 50 to the frame 16. As a result, the stress applied to the sealing member 18 due to the difference in material between the sealing member 18 and the frame 16 can be reduced, preventing peeling or cracking of the sealing member 18, and improving the reliability of the semiconductor light emitting device 10.

[0055] (Fourth embodiment) 5 is a top view showing a schematic configuration of a semiconductor light emitting device 10C according to a fourth embodiment. The semiconductor light emitting device 10C differs from the third embodiment in that the inner circumferential surface 16b of the frame 16 is formed to extend in an arc rather than a rectangular shape, but is otherwise the same as the third embodiment.

[0056] According to this embodiment, it is possible to reduce the distance d4 from each of the three sides 44a to 44c of the upper surface 12a of the semiconductor light emitting element 12 to the frame body 16, and to further reduce the amount of the sealing member 18 provided inside the frame body 16. As a result, it is possible to reduce the stress applied to the sealing member 18 due to the difference in material between the sealing member 18 and the frame body 16, thereby suppressing the peeling or cracking of the sealing member 18, and thus improving the reliability of the semiconductor light emitting device 10.

[0057] The present invention has been described above based on the embodiments. It will be understood by those skilled in the art that the present invention is not limited to the above-mentioned embodiments, that various design changes are possible, that various modifications are possible, and that such modifications are also within the scope of the present invention.

[0058] Several aspects of the present invention will now be described.

[0059] A first aspect of the present invention is a semiconductor light emitting device including a package substrate, a semiconductor light emitting element flip-chip bonded onto the package substrate, a frame body provided around the semiconductor light emitting element on the package substrate, and a sealing member covering the upper surface of the semiconductor light emitting element on the package substrate, covering the upper surface of the frame body, and having translucency at the emission wavelength of the semiconductor light emitting element, the upper surface of the semiconductor light emitting element having a plurality of corners, and the distance from each of the plurality of corners to the frame body is smaller than the width of the upper surface of the frame body. According to the first aspect, by reducing the distance from the corners of the semiconductor light emitting element to the frame body, the amount of sealing member provided between the semiconductor light emitting element and the frame body can be reduced. As a result, the stress applied to the sealing member due to the difference in material between the sealing member and the frame body can be reduced, and the occurrence of peeling or cracking of the sealing member can be suppressed. By increasing the width of the upper surface of the frame body covered by the sealing member, the sealing property by the sealing member can be improved. This improves the reliability of the semiconductor light emitting device.

[0060] A second aspect of the present invention is the semiconductor light emitting device according to the first aspect, in which, in a plan view of the top surface of the semiconductor light emitting element, an area inside the frame is equal to or less than twice the area of ​​the top surface of the semiconductor light emitting element. According to the second aspect, the amount of sealing member provided on the sides of the semiconductor light emitting element can be reduced relative to the amount of sealing member covering the top surface of the semiconductor light emitting element. As a result, the stress applied to the sealing member due to the difference in material between the sealing member and the frame can be reduced, and peeling or cracking of the sealing member can be suppressed, thereby improving the reliability of the semiconductor light emitting device.

[0061] A third aspect of the present invention is the semiconductor light emitting device according to the first aspect, further comprising a protective element bonded to the package substrate and covered by the sealing member, and in a plan view of the top surface of the semiconductor light emitting element, an area inside the frame is equal to or less than twice the total area of ​​the top surface of the semiconductor light emitting element and the top surface of the protective element. According to the third aspect, the amount of sealing member provided on the sides of the semiconductor light emitting element and the protective element can be reduced relative to the amount of sealing member covering the top surfaces of the semiconductor light emitting element and the protective element. As a result, the stress applied to the sealing member due to the difference in material between the sealing member and the frame can be reduced, and peeling or cracking of the sealing member can be suppressed, thereby improving the reliability of the semiconductor light emitting device.

[0062] A fourth aspect of the present invention is the semiconductor light emitting device according to the first aspect, further comprising a protective element bonded onto the package substrate and covered by the sealing member, the distance from the protective element to the frame being smaller than the width of the upper surface of the frame, and the distance from the semiconductor light emitting element to the protective element being smaller than the width of the upper surface of the frame. According to the fourth aspect, by reducing the distance from the protective element to the frame and the distance from the semiconductor light emitting element to the protective element, the amount of sealing member provided on the side of the protective element can be reduced. As a result, the stress applied to the sealing member due to the difference in material between the sealing member and the frame can be reduced, and peeling and cracking of the sealing member can be suppressed.

[0063] A fifth aspect of the present invention is the semiconductor light emitting device according to any one of the first to fourth aspects, in which a gap is provided between the package substrate and the sealing member. According to the fifth aspect, since the sealing member is provided away from the package substrate, it is possible to reduce stress applied to the sealing member due to differences in materials between the package substrate and the sealing member. As a result, it is possible to suppress peeling or cracking of the sealing member, thereby improving the reliability of the semiconductor light emitting device.

[0064] A sixth aspect of the present invention is the semiconductor light emitting device according to any one of the first to fifth aspects, wherein the distance from each of the plurality of corners to the frame is 10 μm or more and 300 μm or less. According to the fifth aspect, by setting the distance from the semiconductor light emitting element to the frame to 10 μm or more and 300 μm or less, peeling or cracking of the sealing member can be suppressed, and the reliability of the semiconductor light emitting device can be improved.

[0065] A seventh aspect of the present invention is the semiconductor light emitting device according to any one of the first to sixth aspects, wherein the sealing member has a dome shape that is convex upward. According to the seventh aspect, by making the sealing member dome-shaped, it is possible to improve the light extraction efficiency of the semiconductor light emitting device. [Explanation of symbols]

[0066] 10...semiconductor light emitting device, 12...semiconductor light emitting element, 12a...upper surface, 14...package substrate, 16...frame, 16a...upper surface, 18...sealing member, 46a to 46d...corners, 50...protective element.

Claims

1. A package substrate; a semiconductor light emitting device that is flip-chip bonded onto the package substrate; a frame provided around the semiconductor light emitting element on the package substrate; a sealing member that covers an upper surface of the semiconductor light emitting element on the package substrate, covers an upper surface of the frame, and has translucency at an emission wavelength of the semiconductor light emitting element; The top surface of the semiconductor light emitting element has a plurality of corners, and the distance from each of the plurality of corners to the frame is smaller than the width of the top surface of the frame.

2. 2 . The semiconductor light emitting device according to claim 1 , wherein in a plan view of the upper surface of the semiconductor light emitting element, an area inside the frame is equal to or smaller than twice an area of ​​the upper surface of the semiconductor light emitting element.

3. a protection element bonded onto the package substrate and covered by the sealing member; 2 . The semiconductor light emitting device according to claim 1 , wherein in a plan view of the top surface of the semiconductor light emitting element, an area inside the frame is not more than twice the total area of ​​the top surface of the semiconductor light emitting element and the top surface of the protective element.

4. a protection element bonded onto the package substrate and covered by the sealing member; a distance from the protection element to the frame body is smaller than a width of the upper surface of the frame body; The semiconductor light emitting device according to claim 1 , wherein a distance from said semiconductor light emitting element to said protective element is smaller than a width of said upper surface of said frame.

5. The semiconductor light emitting device according to claim 1 , wherein a gap is provided between the package substrate and the sealing member.

6. The semiconductor light emitting device according to claim 1 , wherein a distance from each of the plurality of corners to the frame is not less than 10 μm and not more than 300 μm.

7. The semiconductor light emitting device according to claim 1 , wherein the sealing member has an upwardly convex dome shape.

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