Quantum device and quantum device manufacturing method

Abstract

To provide a quantum device capable of suppressing change of capacitive coupling.SOLUTION: A quantum device comprises a first chip with quantum bits including a belt-like pattern extending in a first direction and a second chip with a belt-like readout pad extending in a second direction different from the first direction, and the readout pad is opposed to and crosses the belt-like pattern.SELECTED DRAWING: Figure 13

Description

[Technical field]

[0001] The present disclosure relates to quantum devices and methods for fabricating quantum devices. [Background technology]

[0002] A known quantum device is one that includes a quantum bit and a readout pad. For example, Patent Document 1 discloses a quantum device including a first chip including an array of superconducting qubits, which are Xmons, and a second chip including an array of pad elements that are capacitively coupled to the superconducting qubits. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 6810280 Summary of the Invention [Problem to be solved by the invention]

[0004] Each pad element disclosed in the '161 patent is aligned over the center of a corresponding Xmon. Therefore, for example, if the position of the pad element is shifted from the center of Xmon, the magnitude of the capacitive coupling between Xmon and the pad element may vary.

[0005] An object of the present disclosure is to provide a quantum device and a method for manufacturing the quantum device that solves the above-mentioned problems. [Means for solving the problem]

[0006] A quantum device according to one aspect of the present disclosure comprises a first chip having quantum bits including a band-shaped pattern extending in a first direction, and a second chip having a band-shaped readout pad extending in a second direction different from the first direction, the readout pad intersecting and facing the band-shaped pattern.

[0007] A quantum device manufacturing method according to one aspect of the present disclosure includes preparing a first chip having a quantum bit including a band-shaped pattern and a second chip having a band-shaped readout pad, and bonding the first chip and the second chip so that a first direction in which the band-shaped pattern extends is different from a second direction in which the readout pad extends, and so that the band-shaped pattern and the readout pad intersect opposite each other. Effect of the Invention

[0008] According to the above aspect, it is possible to suppress fluctuations in capacitive coupling. [Brief description of the drawings]

[0009] [Figure 1] 1 is a cross-sectional view of a quantum device according to a first embodiment. [Diagram 2] FIG. 2 is an enlarged view of part II in FIG. [Diagram 3] FIG. 3 is a cross-sectional view taken along line III-III in FIG. [Figure 4] 3A to 3C are diagrams illustrating the operation of the quantum device according to the first embodiment. [Diagram 5] 1 is a flowchart of a quantum device manufacturing method according to a first embodiment and an embodiment of a minimum configuration of the quantum device manufacturing method. [Figure 6] FIG. 13 is a diagram showing a relationship between a quantum bit and a read pad according to a comparative example. [Figure 7] 4A to 4C are explanatory diagrams illustrating the action and effect of the quantum device according to the first embodiment. [Figure 8] FIG. 13 is a diagram showing a relationship between a quantum bit and a read pad according to a comparative example. [Figure 9] FIG. 4 is a cross-sectional view of a quantum device according to a second embodiment. [Figure 10] FIG. 11 is a cross-sectional view of a quantum device according to a third embodiment. [Figure 11] FIG. 11 is a cross-sectional view of a quantum device according to a fourth embodiment. [Figure 12] FIG. 13 is a cross-sectional view of a quantum device according to a fifth embodiment. [Figure 13] 1 is a cross-sectional view of a quantum device according to an embodiment of a minimum configuration of the quantum device. [Figure 14] 14 is a cross-sectional view taken along line XIV-XIV in FIG. 13. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Various embodiments according to the present disclosure will be described below with reference to the drawings.

[0011] First Embodiment A first embodiment according to the present disclosure will be described below with reference to FIGS.

[0012] (Quantum Device Configuration) The quantum device 9 is a device implemented in a quantum computer. As shown in FIGS. 1 and 2, the quantum device 9 includes a first chip 1, a second chip 2, and a bump 3. The first chip 1 has a plate shape. First chip 1 has a first plane 1s as a plate surface on the side facing second chip 2. The second chip 2 has a plate shape. The second chip 2 has, on the side facing the first chip 1, a second plane 2s that is larger than the first plane 1s as a plate surface. The first chip 1 and the second chip 2 are stacked with the bumps 3 interposed therebetween so that the first plane 1s and the second plane 2s face each other and are spaced apart from each other.

[0013] (Detailed configuration of the first chip) The first chip 1 is a quantum chip. The first chip 1 comprises a plurality of quantum bits 11 . A plurality of quantum bits 11 are provided on a first plane 1s. The multiple quantum bits 11 are arranged in an array in a plane along the first plane 1s.

[0014] In the following, the stacking direction of first chip 1 and second chip 2 is also referred to as the Z direction, the first direction D1 within the first plane 1s as the X direction, and the second direction D2 different from the first direction D1 within the first plane 1s as the Y direction. For example, the Z direction may be the up-down direction, and the X and Y directions may be the horizontal directions. For example, the Z direction, the X direction, and the Y direction may be perpendicular to each other.

[0015] As shown in Figures 2 and 3, each quantum bit 11 includes a strip-shaped pattern 111 extending in a first direction D1. For example, each quantum bit 11 may be an Xmon and may have a cross-shaped thin film pattern as a whole when viewed in the Z direction. In this case, each quantum bit 11 may include a strip pattern 111 as a part of the cross-shaped thin film pattern. Here, the cross shape of each quantum bit 11 has a pair of arms extending in opposite directions in the X direction, and a pair of arms extending in opposite directions in the Y direction. Specifically, the belt-like pattern 111 may be a pattern of one of the four arms of a cross shape, the arm having a belt shape protruding to one side in the X direction from a cross point CP of the cross shape. Here, the cross-shaped thin film pattern of each quantum bit 11 functions as a resonant circuit for the microwaves confined in the quantum bit 11 . For example, the cross-shaped thin film pattern of each quantum bit 11 may be made entirely of a superconductor.

[0016] In this disclosure, a superconductor may be a material that functions as a superconductor at cryogenic temperatures. For example, the superconductor may be Nb, which functions as a superconductor below 9.2K. For example, the superconductor may be Al, which functions as a superconductor at temperatures below 1.2K.

[0017] (Detailed configuration of the second chip) The second chip 2 is a readout chip. For example, the second chip 2 is an interposer that reads out information stored in the first chip 1 and outputs it to the outside of the quantum device 9. The second chip 2 includes a plurality of read circuits 21. The multiple readout circuits 21 are arranged in an array in a plane along the second plane 2s. Each read circuit 21 includes a read pad 211 and a lead line 212 .

[0018] The read pads 211 face corresponding quantum bits 11 among the plurality of quantum bits 11 in a one-to-one relationship. The read pad 211 is provided in the second plane 2s. The read pad 211 has a strip shape extending in the second direction D2 (Y direction). The length of the read pad 211 in the Y direction is greater than the width of the strip pattern 111 in the Y direction.

[0019] The read pad 211 has a first pair of parallel sides 211F that intersect with the band-shaped pattern 111 and a second pair of parallel sides 211S that do not intersect with the band-shaped pattern 111. For example, the read pad 211 may have a rectangular shape with the long sides at both ends in the X direction as a first side pair 211F and the short sides at both ends in the Y direction as a second side pair 211S.

[0020] The strip-shaped read pad 211 intersects with the opposing strip-shaped pattern 111. Therefore, when viewed from the Z direction, the strip-shaped pattern 111 and the read pad 211 have an overlapping portion RO where they overlap each other in the center of each pattern. That is, the shape of the read pad 211 extends to protrude on both sides in the Y direction, which is the width direction of the belt-like pattern 111, while maintaining the width of the intersecting overlapping portion RO. For example, the length by which the read pad 211 protrudes from the overlapping portion RO in the Y direction may be set to be greater than the tolerance for positional misalignment in the Y direction when the first chip 1 and the second chip 2 are joined together.

[0021] On the other hand, the shape of the belt-like pattern 111 extends on both sides in the X direction, which is the width direction of the read pad 211, while maintaining the width of the intersecting overlapping portion RO. For example, the length by which the strip-like pattern 111 protrudes in the X direction from the overlapping portion RO may be set to be greater than the tolerance for positional deviation in the X direction when the first chip 1 and the second chip 2 are bonded together. For example, the shape of the belt-like pattern 111 in the overlapping portion RO and in the portion protruding from the overlapping portion RO in the X direction may be a shape that does not change substantially within the range of the positional deviation tolerance in the X direction when the first chip 1 and the second chip 2 are bonded. The positional deviation tolerance in the X direction and the positional deviation tolerance in the Y direction may be, for example, 0±5 μm.

[0022] The lead wire 212 is provided on the second plane 2s. The lead line 212 extends from one of the second sides 211S of the read pad 211 in the second direction D2. Specifically, the lead line 212 protrudes from the center of the second side pair 211S and extends linearly in the Y direction with a width in the X direction smaller than the width of the read pad 211 in the X direction.

[0023] (Quantum device operation) The readout circuit 21 reads out to the outside the information stored in the corresponding quantum bit 11. At that time, the readout pad 211 is capacitively coupled to the strip-shaped pattern 111 through the gap formed between the first plane 1s and the second plane 2s, so that the readout circuit 21 reads out the information stored in the quantum bit 11, as shown in FIG.

[0024] (Quantum device manufacturing method) 5, an operator prepares a first chip 1 having quantum bits 11 including strip-shaped patterns 111, and a second chip 2 having strip-shaped read pads 211 (ST01). At that time, the operator may place a material for forming bumps 3 between the first chip 1 and the second chip 2.

[0025] Following ST01, the worker bonds the first chip 1 and the second chip 2 such that the first direction D1 in which the belt-like pattern 111 extends is different from the second direction D2 in which the read pad 211 extends, and the belt-like pattern 111 and the read pad 211 cross each other facing each other (ST02). At that time, the worker may heat a material for forming the bumps 3, and bond the first chip 1 and the second chip 2 with the bumps 3.

[0026] In ST02, the worker may join the first chip 1 and the second chip 2, for example, so that the shape of the read pad 211 extends on both sides of the width of the second direction D2 of the belt-shaped pattern 111 while maintaining the width of the intersecting overlapping portion. In ST02, the worker may join the first chip 1 and the second chip 2, for example, so that the shape of the band-shaped pattern 111 extends on both sides of the width of the read pad 211 while maintaining the width of the intersecting overlapping portion RO. In ST02, the worker may join the first chip 1 and the second chip 2 together such that the length of the read pad 211 in the second direction D2 is greater than the width of the belt-like pattern 111 in the second direction D2, for example. In ST02, the worker may join the first chip 1 and the second chip 2 together so that the belt-like pattern 111 and the read pad 211 are capacitively coupled to each other. In ST02, the worker may join the first chip 1 and the second chip 2, for example, so that the lead wire 212 extends in the second direction D2.

[0027] (Action and Effects) In the quantum device 9 of this embodiment, a strip-shaped read pad 211 extending in the second direction D2 faces and intersects with a strip-shaped pattern 111 extending in the first direction D1. Therefore, even if the read pad 211 is shifted in the first direction D1 or the second direction D2 with respect to the belt-like pattern 111, the area of ​​the overlapping portion RO is unlikely to change. For example, even if the second chip 2 is misaligned with respect to the first chip 1 during the bonding process of the quantum device 9, the magnitude of the capacitive coupling between the quantum bit 11 and the readout pad 211 is unlikely to fluctuate. Therefore, the quantum device 9 of the present embodiment can suppress fluctuations in capacitive coupling.

[0028] For example, as a comparative example, when a square-shaped readout pad as shown in FIG. 6 overlaps with a cross-shaped intersection of quantum bits, the area of ​​the overlapping portion is likely to change due to misalignment of the readout pad. In contrast, in the quantum device 9 of the present embodiment, the area of ​​the overlapping portion RO is unlikely to change as described above, and therefore fluctuations in the capacitive coupling can be suppressed.

[0029] According to this embodiment, even if a misalignment occurs when the first chip 1 and the second chip 2 are joined, the area of ​​the overlapping portion RO is unlikely to fluctuate as long as it is within the misalignment tolerance compensated for based on the shape of the band-shaped pattern 111 and the shape of the band-shaped read pad 211. For example, according to this embodiment, when the read pad 211 is arranged to intersect with the band-shaped pattern 111 as shown in FIG. 7, the length of the read pad 211 that protrudes in the Y direction from the intersecting overlapping portion RO is greater than the bonding position misalignment tolerance between the first chip 1 and the second chip 2. On the other hand, in the range where the length of the bonding position misalignment tolerance between the first chip 1 and the second chip 2 is added to both sides of the read pad 211 in the width direction (X direction) of the read pad 211, the shape of the quantum bit does not change substantially. For this reason, even if misalignment occurs when the first chip 1 and the second chip 2 are joined together, the area of ​​the overlapping portion RO is unlikely to vary as long as the misalignment is within the tolerance for misalignment. Therefore, according to the quantum device 9, the magnitude of the capacitive coupling is less likely to fluctuate, and stable read performance is guaranteed.

[0030] According to this embodiment, the shape of the read pad 211 can be designed independently of the shape of the quantum bit 11. For example, simply by changing the width of the read pad 211, the capacitive coupling can be set to any desired magnitude.

[0031] According to this embodiment, the lead line 212 extends from one of the second side pair 211S of the read pad 211 protruding on both sides of the belt-like pattern 111 in the Y direction. For this reason, it is difficult for the lead wire 212 to enter the overlapping portion RO. Therefore, quantum device 9 can suppress the effect of lead 212 on the magnitude of capacitive coupling between quantum bit 11 and readout pad 211.

[0032] For example, as a comparative example, when a readout pad is small enough that the overlapping portion intersecting with the quantum bit is contained within the quantum bit as shown in Fig. 8, the quantum bit and the lead-out line have an overlapping portion. Therefore, due to misalignment of the readout pad, the lead-out line is likely to affect the magnitude of the capacitive coupling between the quantum bit and the readout pad. In contrast, in the quantum device 9 of this embodiment, the lead wire 212 is unlikely to enter the overlapping portion RO as described above, so that the effect of the lead wire 212 on the magnitude of the capacitive coupling between the quantum bit 11 and the readout pad 211 can be suppressed.

[0033] According to this embodiment, the read pad 211 has a first pair of parallel sides 211F that intersect with the stripe pattern 111 and a second pair of parallel sides 211S that do not intersect with the stripe pattern 111. For this reason, the area of ​​the overlapping portion RO is less likely to change with respect to a positional deviation in the Y direction.

[0034] According to this embodiment, the shape of the read pad 211 is such that it extends on both sides of the belt-like pattern 111 in the width direction while maintaining the width of the intersecting overlapping portion. For this reason, the area of ​​the overlapping portion RO is less likely to change with respect to a positional deviation in the Y direction.

[0035] According to this embodiment, the length of the read pad 211 in the second direction D2 is greater than the width of the strip-shaped pattern 111. For this reason, the area of ​​the overlapping portion RO is less likely to change with respect to a positional deviation in the Y direction.

[0036] According to this embodiment, the strip pattern 111 and the read pad 211 are capacitively coupled. Therefore, quantum device 9 can read out information stored in quantum bit 11 to the outside via read pad 211.

[0037] (Modification) In one example of this embodiment, the cross-shaped thin film patterns of each quantum bit 11 are all made of a superconductor, but other components that are electromagnetically coupled to the quantum bit 11 may also be made of a superconductor. Alternatively, the read pad 211 may consist of a thin film pattern of a superconductor. As another modification, the read pad 211 and the lead wire 212 may be constructed from a thin film pattern of a superconductor.

[0038] In one example of this embodiment, the lead-out line 212 extends from the second side pair 211S of the read pad 211 in the second direction D2, but may be configured in any manner as long as the effect of the lead-out line 212 on the magnitude of capacitive coupling between the quantum bit 11 and the read pad 211 can be suppressed. As a modification, the lead-out lines 212 may extend in a direction other than the second direction D2 from the second side pair 211S of the read pad 211. Specifically, the lead-out lines 212 may extend from the second side pair 211S of the read pad 211 in a direction oblique to the second direction D2.

[0039] Second Embodiment Hereinafter, a second embodiment according to the present disclosure will be described with reference to FIG. The quantum device of this embodiment has the same configuration as the quantum device of the first embodiment, operates in the same way, is manufactured in the same way, and provides the same effects and advantages, except for the points described below.

[0040] (composition) A quantum device 9 of this embodiment includes quantum bits 15 as shown in FIG. 9, instead of quantum bits 11 as shown in FIG.

[0041] As shown in FIG. 9, each quantum bit 15 includes a strip-shaped pattern 151 extending in a first direction D1. For example, each quantum bit 15 may have a thin film pattern that is, as a whole, in a circular ring shape when viewed from the Z direction. In this case, each quantum bit 15 may include a strip-shaped pattern 151 as a part of the circular ring-shaped thin film pattern. Specifically, the band-like pattern 151 may be a pattern of a portion of a circular ring-shaped pattern that extends in the X direction on one side in the Y direction around the circumference of the circular ring-shaped pattern. Here, the annular thin film pattern of each quantum bit 15 functions as a resonant circuit for the microwaves confined in the quantum bit 15 . For example, the annular thin film pattern of each quantum bit 15 may be made entirely of a superconductor.

[0042] On the other hand, the read pad 211 has a shape for the stripe pattern 151 similar to the shape for the stripe pattern 111 of the first embodiment. Further, the read pad 211 is provided with a positional relationship with respect to the belt-like pattern 151 similar to the positional relationship with respect to the belt-like pattern 111 in the first embodiment.

[0043] (Action and Effects) In the quantum device 9 of this embodiment, a strip-shaped read pad 211 extending in the second direction D2 faces and intersects with a strip-shaped pattern 151 extending in the first direction D1. Therefore, even if the read pad 211 is shifted in the first direction D1 or the second direction D2 with respect to the belt-like pattern 151, the area of ​​the overlapping portion is unlikely to change. Therefore, the quantum device 9 of this embodiment can also suppress fluctuations in capacitive coupling.

[0044] <Third embodiment> Hereinafter, a third embodiment according to the present disclosure will be described with reference to FIG. The quantum device of this embodiment has the same configuration as the quantum device of the first embodiment, operates in the same way, is manufactured in the same way, and provides the same effects and advantages, except for the points described below.

[0045] (composition) A quantum device 9 of this embodiment includes quantum bits 16 as shown in FIG. 10, instead of quantum bits 11 as shown in FIG.

[0046] As shown in FIG. 10, each quantum bit 16 includes a strip-shaped pattern 161 and a square pattern 162 extending in a first direction D1. The quadrangular pattern 162 is a thin film pattern having a pair of sides extending in a first direction D1 and a pair of sides extending in a second direction D2, and having a square shape when viewed in the Z direction. The belt-like pattern 161 is a thin-film pattern that extends so as to protrude in the first direction D1 from the center of one of a pair of sides of the rectangular pattern 162 that extend in the second direction D2. Here, the square pattern 162 and the stripe pattern 161 of each quantum bit 16 collectively function as a resonant circuit for the microwaves trapped in each quantum bit 16. On the other hand, the stripe pattern 161 also functions as a readout bar for providing information to the readout pad 211. For example, the thin film patterns of the square pattern 162 and the strip pattern 161 of each quantum bit 16 may all be made of a superconductor.

[0047] On the other hand, the read pad 211 has a shape for the stripe pattern 161 similar to the shape for the stripe pattern 111 of the first embodiment. Moreover, the read pad 211 is provided in a positional relationship with respect to the belt-like pattern 161 similar to the positional relationship with respect to the belt-like pattern 111 in the first embodiment.

[0048] (Action and Effects) In the quantum device 9 of this embodiment, a strip-shaped read pad 211 extending in the second direction D2 faces and intersects with a strip-shaped pattern 161 extending in the first direction D1. Therefore, even if the read pad 211 is shifted in the first direction D1 or the second direction D2 with respect to the belt-like pattern 161, the area of ​​the overlapping portion is unlikely to change. Therefore, the quantum device 9 of this embodiment can also suppress fluctuations in capacitive coupling.

[0049] <Fourth embodiment> Hereinafter, a fourth embodiment according to the present disclosure will be described with reference to FIG. The quantum device of this embodiment has the same configuration as the quantum device of the first embodiment, operates in the same way, is manufactured in the same way, and provides the same effects and advantages, except for the points described below.

[0050] (composition) A quantum device 9 of this embodiment includes quantum bits 17 as shown in FIG. 11, instead of quantum bits 11 as shown in FIG.

[0051] As shown in FIG. 11, each quantum bit 17 includes a strip-shaped pattern 171 extending in a first direction D1 and a circular pattern 172. The circular pattern 172 is a thin film pattern that has a circular shape as a whole when viewed in the Z direction. The belt-like pattern 171 is a thin film pattern that extends in the second direction D2 from the center of the outer periphery on one side of the first direction D1, protruding in the first direction D1. Here, the circular pattern 172 and the stripe pattern 171 of each quantum bit 17 function as a resonant circuit as a whole for the microwaves trapped in each quantum bit 17. On the other hand, the stripe pattern 171 also functions as a readout bar for providing information to the readout pad 211. For example, the thin film patterns of the circular pattern 172 and the stripe pattern 171 of each quantum bit 17 may all be made of a superconductor.

[0052] On the other hand, the read pad 211 has a shape for the stripe pattern 171 similar to the shape for the stripe pattern 111 of the first embodiment. The read pad 211 is provided with a positional relationship with respect to the belt-like pattern 171 similar to the positional relationship with respect to the belt-like pattern 111 in the first embodiment.

[0053] (Action and Effects) In the quantum device 9 of this embodiment, a strip-shaped read pad 211 extending in the second direction D2 faces and intersects with a strip-shaped pattern 171 extending in the first direction D1. Therefore, even if the read pad 211 is shifted in the first direction D1 or the second direction D2 with respect to the belt-like pattern 171, the area of ​​the overlapping portion is unlikely to change. Therefore, the quantum device 9 of this embodiment can also suppress fluctuations in capacitive coupling.

[0054] <Fifth embodiment> Hereinafter, the fifth embodiment according to the present disclosure will be described with reference to FIG. The quantum device of this embodiment has the same configuration as the quantum device of the first embodiment, operates in the same way, is manufactured in the same way, and provides the same effects and advantages, except for the points described below.

[0055] (composition) A quantum device 9 of this embodiment includes quantum bits 18 as shown in FIG. 12, instead of quantum bits 11 as shown in FIG.

[0056] As shown in FIG. 12, each quantum bit 18 includes a strip pattern 181 extending in a first direction D1 and a cross pattern 182. The cross pattern 182 is a thin film pattern having a cross shape when viewed from the Z direction. Here, the cross shape of cross pattern 182 has a pair of arms extending in opposite directions at 45° counterclockwise from the X direction, and a pair of arms extending in opposite directions at 45° counterclockwise from the Y direction. The band-like pattern 181 is a thin-film pattern that extends in a band shape in the first direction D1 to connect the central portions of two adjacent arm patterns that are sandwiched between a line extending in one direction Y of the four arm patterns of the cross shape of the cross pattern 182. Here, the cross pattern 182 and the stripe pattern 181 of each quantum bit 18 collectively function as a resonant circuit for the microwaves confined in each quantum bit 18. On the other hand, the stripe pattern 181 also functions as a readout bar for providing information to the readout pad 211. For example, the thin film patterns of the cross-shaped pattern 182 and the strip-shaped pattern 181 of each quantum bit 18 may all be made of a superconductor.

[0057] On the other hand, the read pad 211 has a shape for the stripe pattern 181 similar to the shape for the stripe pattern 111 of the first embodiment. The read pad 211 is provided with a positional relationship with respect to the belt-like pattern 181 similar to the positional relationship with respect to the belt-like pattern 111 of the first embodiment.

[0058] (Action and Effects) In the quantum device 9 of this embodiment, a strip-shaped read pad 211 extending in the second direction D2 faces and intersects with a strip-shaped pattern 181 extending in the first direction D1. Therefore, even if the read pad 211 is shifted in the first direction D1 or the second direction D2 with respect to the belt-like pattern 181, the area of ​​the overlapping portion is unlikely to change. Therefore, the quantum device 9 of this embodiment can also suppress fluctuations in capacitive coupling.

[0059] Furthermore, according to quantum device 9 of the present embodiment, the space between the two arms can be effectively used as strip-shaped pattern 181, resulting in good space efficiency. Therefore, the quantum device 9 of this embodiment can be made smaller.

[0060] In this embodiment, the belt-shaped pattern 181 connects the central portions of the patterns of two adjacent arm portions, but as long as it extends in the first direction D1, the patterns of the two adjacent arm portions may be connected in any manner, not limited to the central portions. As a modified example, belt-like pattern 181 may connect portions of two adjacent arm portions closer to the tip of each arm portion than to the center of the patterns of the two adjacent arm portions. As another modification, the belt-like pattern 181 may connect portions of two adjacent arm portions closer to the intersection of the cross shape than to the center of the patterns.

[0061] <Embodiments of the minimum configuration of quantum devices> Hereinafter, an embodiment of a minimum configuration of a quantum device according to the present disclosure will be described with reference to FIGS.

[0062] (composition) As shown in FIG. 13, a quantum device 99 of this embodiment includes a first chip 91 and a second chip 92. As shown in Figures 13 and 14, a first chip 91 includes quantum bits 19 including a strip-shaped pattern 191 extending in a first direction D1. The second chip 92 has a strip-shaped read pad 291 extending in a second direction D2 different from the first direction D1. The read pad 291 faces and intersects with the strip pattern 191 .

[0063] (Action and Effects) In the quantum device 99 of this embodiment, a strip-shaped read pad 291 extending in the second direction D2 faces and intersects with a strip-shaped pattern 191 extending in the first direction D1. Therefore, even if the read pad 291 is shifted in the first direction D1 or the second direction D2 with respect to the belt-like pattern 191, the area of ​​the overlapping portion is unlikely to change. Therefore, the quantum device 99 of the present embodiment can suppress fluctuations in capacitive coupling.

[0064] <Embodiment of Minimum Configuration of Quantum Device Manufacturing Method> Hereinafter, an embodiment of a minimum configuration of a quantum device manufacturing method according to the present disclosure will be described with reference to FIG.

[0065] (composition) As shown in FIG. 5, in the quantum device manufacturing method, a first chip having quantum bits including a strip-shaped pattern and a second chip having strip-shaped readout pads are prepared (ST01); The first chip and the second chip are joined together so that a first direction in which the belt-like patterns extend and a second direction in which the read pads extend differ from each other, and so that the belt-like patterns and the read pads face each other and intersect (ST02).

[0066] (Action and Effects) According to the quantum device manufacturing method of this embodiment, the strip-shaped readout pad extending in the second direction faces and intersects with the strip-shaped pattern extending in the first direction. Therefore, even if the read pad is shifted in the first direction or the second direction with respect to the belt-like pattern, the area of ​​the overlapping portion is unlikely to change. Therefore, the quantum device manufacturing method of the present embodiment can suppress fluctuations in capacitive coupling.

[0067] Although the embodiment of the present disclosure has been described above, this embodiment is shown as an example and is not intended to limit the scope of the present disclosure. This embodiment can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the gist of the present disclosure.

[0068] A part or all of the above-described embodiments may be described as, but is not limited to, the following supplementary notes.

[0069] (Appendix 1) a first chip having quantum bits including a stripe pattern extending in a first direction; a second chip having a strip-shaped read pad extending in a second direction different from the first direction; Equipped with The read pads are opposed to and intersect with the stripe pattern. Quantum devices.

[0070] (Appendix 2) The read pad has a first pair of parallel sides that intersect the stripe pattern and a second pair of sides that do not intersect the stripe pattern. 2. The quantum device of claim 1.

[0071] (Appendix 3) The shape of the read pad extends on both sides of the belt-like pattern in the width direction while maintaining the width of the overlapping portion. 3. The quantum device of claim 1 or 2.

[0072] (Appendix 4) The shape of the belt-like pattern extends on both sides of the width of the read pad while maintaining the width of the overlapping portion. 4. A quantum device according to any one of claims 1 to 3.

[0073] (Appendix 5) The length of the read pad in the second direction is greater than the width of the strip pattern. 5. A quantum device according to any one of claims 1 to 4.

[0074] (Appendix 6) The stripe pattern and the read pad are capacitively coupled. 6. A quantum device according to any one of claims 1 to 5.

[0075] (Appendix 7) The second chip further includes a lead extending from the second pair of sides of the read pad. 3. The quantum device of claim 2.

[0076] (Appendix 8) the qubit further comprises a cross pattern; The band-like pattern connects the patterns of two adjacent arms of the cross pattern. 8. A quantum device according to any one of claims 1 to 7.

[0077] (Appendix 9) providing a first chip having quantum bits including a stripe pattern and a second chip having stripe readout pads; The first chip and the second chip are joined together such that a first direction in which the stripe pattern extends is different from a second direction in which the read pad extends, and the stripe pattern and the read pad intersect opposite to each other. Quantum device manufacturing methods.

[0078] (Appendix 10) The first chip and the second chip are joined together so that the read pad has a first pair of parallel sides that intersect the stripe pattern and a second pair of sides that do not intersect the stripe pattern. 10. A method for manufacturing a quantum device as recited in claim 9.

[0079] (Appendix 11) The first chip and the second chip are joined together so that the shape of the read pad extends on both sides of the belt-like pattern in the width direction while maintaining the width of the overlapping portion. 11. A method for manufacturing a quantum device according to claim 9 or 10.

[0080] (Appendix 12) The first chip and the second chip are joined together so that the shape of the belt-like pattern extends on both sides in the width direction of the read pad while maintaining the width of the intersecting overlapping portion. 12. A method for manufacturing a quantum device according to any one of claims 9 to 11.

[0081] (Appendix 13) The first chip and the second chip are joined together so that the length of the read pad in the second direction is greater than the width of the strip-shaped pattern. 13. A method for manufacturing a quantum device according to any one of claims 9 to 12.

[0082] (Appendix 14) The first chip and the second chip are joined together so that the strip-shaped pattern and the read pad are capacitively coupled to each other. 14. A method for manufacturing a quantum device according to any one of claims 9 to 13.

[0083] (Appendix 15) The second chip further includes a lead extending from the second pair of sides of the read pad. 11. A method for manufacturing a quantum device as recited in claim 10.

[0084] (Appendix 16) the qubit further comprises a cross pattern; The band-like pattern connects the patterns of two adjacent arms of the cross pattern. 16. A method for manufacturing a quantum device according to any one of claims 9 to 15. [Explanation of symbols]

[0085] 1. First Chip 1s first plane 2. Second Chip 2s second plane 3. Bump 9. Quantum Devices 11. Qubits 15 qubits 16 qubits 17 qubits 18 qubits 19 qubits 21 Readout circuit 91 First Chip 92 Second Chip 99 Quantum Devices 111 Band Pattern 151 Band Pattern 161 Band Pattern 162 Square Pattern 171 Band Pattern 172 Circular Pattern 181 Band Pattern 182 Cross Pattern 191 Band Pattern 211 Readout Pad 211F First side pair 211S second side pair 212 Lead Line 291 Read Pad CP Intersection D1 First direction D2 Second direction RO overlapping part

Claims

1. a first chip having quantum bits including a stripe pattern extending in a first direction; a second chip having a strip-shaped read pad extending in a second direction different from the first direction; Equipped with The read pads are opposed to and intersect with the stripe pattern. Quantum devices.

2. The read pad has a first pair of parallel sides that intersect the stripe pattern and a second pair of sides that do not intersect the stripe pattern. The quantum device of claim 1 .

3. The shape of the read pad extends on both sides of the belt-like pattern in the width direction while maintaining the width of the overlapping portion.

3. The quantum device according to claim 1 or 2.

4. The shape of the belt-like pattern extends on both sides of the width of the read pad while maintaining the width of the overlapping portion.

3. The quantum device according to claim 1 or 2.

5. The length of the read pad in the second direction is greater than the width of the strip pattern.

3. The quantum device according to claim 1 or 2.

6. The stripe pattern and the read pad are capacitively coupled.

3. The quantum device according to claim 1 or 2.

7. The second chip further includes a lead extending from the second pair of sides of the read pad. The quantum device of claim 2.

8. providing a first chip having quantum bits including a strip pattern and a second chip having strip-shaped readout pads; The first chip and the second chip are joined together such that a first direction in which the stripe pattern extends is different from a second direction in which the read pad extends, and the stripe pattern and the read pad intersect opposite to each other. Quantum device manufacturing methods.

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