Method for calculating oxidation time in thermal oxidation process of silicon carbide

Abstract

To provide a method for calculating oxidation time required for developing a semiconductor device having a silicon oxide film formed by thermal oxidation of a semiconductor material composed of silicon carbide, and can control a film thickness of the silicon oxide film with accuracy of a nano scale.SOLUTION: A function is derived that can calculate a film thickness of a silicon oxide film with nanometer accuracy as a function of oxidation temperature, partial pressure of molecules supplied as an oxidant, and oxidation time used when a silicon carbide crystal substrate is thermally oxidized to form the silicon oxide film, and a semiconductor device is developed.SELECTED DRAWING: Figure 12

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