Semiconductor device

Abstract

To provide a semiconductor device capable of suppressing an increase in the heat resistance of a semiconductor element, and achieving reductions in size and cost.SOLUTION: A semiconductor device comprises: a first lead frame; a first semiconductor element connected to the first lead frame; a third lead frame provided with a third first surface; a second lead frame; a second semiconductor element connected to the second lead frame; a first connection part bonded to the first semiconductor element; a second connection part bonded to the third first surface; a first plate-like lead provided with a first coupling part by coupling the first connection part and the second connection part; a third connection part bonded to the second semiconductor element; a fourth connection part bonded to the third first surface; and a second plate-like lead provided with a second coupling part by coupling the third connection part and the fourth connection part. In a view of a Z direction, both of a position range of a Y direction of the first semiconductor element and a position range of the Y direction of the second semiconductor element are overlapped in at least one part, and the second connection part and the fourth connection part are arranged in the Y direction.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present application relates to a semiconductor device. [Background technology]

[0002] Due to recent environmental regulations and technological advances surrounding automobiles, electric vehicles or hybrid vehicles of various sizes have been developed and are becoming more and more popular. Electric vehicles that use a motor as a drive source, such as hybrid vehicles or electric vehicles, are equipped with multiple devices that convert the input current from DC to AC, AC to DC, or convert the input voltage into a different voltage.

[0003] For example, a DC / DC converter, which is one of the above-mentioned devices, is mounted on an electric vehicle to charge a low-voltage lead battery from a high-voltage lithium-ion battery. The high-voltage lithium-ion battery is insulated from the chassis or low-voltage system for the purpose of protection from voltage. In a DC / DC converter, insulation between the high-voltage input side and the low-voltage output side is generally required by an insulating transformer. In a DC / DC converter, a direct current input voltage is switched by a semiconductor element or the like to convert it into an alternating current or other signal, and the converted signal is input to the primary side of an insulating transformer. The output of the secondary side of the insulating transformer is rectified by a semiconductor element or the like, smoothed by a smoothing reactor, and then output from the DC / DC converter as a direct current output voltage.

[0004] Insulated DC / DC converters mounted on electric vehicles or hybrid vehicles handle large currents of kW class or more, and therefore generally use multiple semiconductor elements for rectification. The configuration of an isolated transformer connected to semiconductor elements used for rectification has been disclosed (see, for example, Patent Document 1). The isolated transformer is configured such that the windings go around the same core, and has coil terminals arranged at positions that spread out to the left and right from the center of the core. The semiconductor elements are arranged side-by-side in a wide area of ​​the coil terminals that extend to the left and right. Also, the configuration of a semiconductor device that is connected to an isolated transformer or the like and is miniaturized by integrating multiple semiconductor elements has been disclosed (see, for example, Patent Document 2). In the semiconductor device, a bottom electrode P is provided on the outer side of each of two bottom electrodes M, and linear wiring extends from the semiconductor elements mounted on the bottom electrode P to the bottom electrode M. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Patent No. 6987196 [Patent Document 2] Patent Publication No. 2021-141222 Summary of the Invention [Problem to be solved by the invention]

[0006] In the structure of the isolation transformer in Patent Document 1, semiconductor elements can be connected to the coil terminals of the isolation transformer. However, because the semiconductor elements are arranged in a wide area on both sides of the center of the core and connected to the coil terminals, there is a problem that the size of the entire device increases.

[0007] In the structure of the semiconductor device in the above-mentioned Patent Document 2, a semiconductor element can be arranged on two adjacent electrodes. However, since the wiring extends linearly from the semiconductor element mounted on the lower electrode P, the lower electrode M connected by the wiring branches into two, which causes a problem of an increase in size of the semiconductor device. In this wiring structure, even if the two lower electrodes M are combined into one, it is necessary to arrange each of the connection parts connected to the wiring extending from the left and right semiconductor elements, so the lower electrode M is expanded to a width of more than two connection parts, which causes a problem of an increase in size of the semiconductor device. In addition, by arranging the semiconductor elements in a staggered manner, the connection parts connected to the wiring are also arranged in a staggered manner, so that the increase in the width of the lower electrode M can be suppressed. However, there was a problem that the semiconductor element located at the end of the staggered arrangement is close to the end of the lower electrode, and therefore a sufficient area of ​​the lower electrode contributing to cooling cannot be secured, and the thermal resistance of the semiconductor element increases. In addition, due to these problems, there was a problem of an increase in size of the entire system including the semiconductor element and its connecting parts, which increases the cost.

[0008] SUMMARY OF THE PRESENT DISCLOSURE An object of the present invention is to provide a semiconductor device that is compact and low-cost while suppressing an increase in the thermal resistance of a semiconductor element. [Means for solving the problem]

[0009] The semiconductor device disclosed in the present application includes a first lead frame having electrical conductivity, a first semiconductor element electrically and thermally connected to a first first surface of the first lead frame, the first lead frame being arranged side by side with a gap therebetween and having a third first surface on the same side as the first first surface, a third lead frame having electrical conductivity, the third lead frame being arranged side by side with a gap therebetween and having a second first surface on the same side as the first first surface on the opposite side of the third lead frame from the first lead frame, a second lead frame having electrical conductivity, a second semiconductor element electrically and thermally connected to the second first surface of the second lead frame, a first connection portion bonded via a bonding member to the surface of the first semiconductor element opposite to the first lead frame side, and a second connection portion bonded via a bonding member to the third first surface. a second plate-like lead having electrical conductivity and a second connection portion and a first coupling portion coupling the first connection portion and the second connection portion; a third connection portion joined via a bonding member to the surface of the second semiconductor element opposite the second lead frame side, a fourth connection portion joined to the third first surface via a bonding member, and a second coupling portion coupling the third connection portion and the fourth connection portion; a second plate-like lead having electrical conductivity, wherein the direction in which the first lead frame, the third lead frame, and the second lead frame are arranged is defined as the X direction, the direction parallel to the third first surface and perpendicular to the X direction is defined as the Y direction, and the direction perpendicular to the X direction and the Y direction is defined as the Z direction, and when viewed in the Z direction, the positional range of the first semiconductor element in the Y direction and the positional range of the second semiconductor element in the Y direction at least partially overlap, and the second connection portion and the fourth connection portion are arranged in the Y direction. Effect of the Invention

[0010] According to the semiconductor device disclosed in the present application, the positional range of the first semiconductor element in the Y direction at least partially overlaps with the positional range of the second semiconductor element in the Y direction when viewed in the Z direction, and the second connection portion and the fourth connection portion are arranged in the Y direction, so that the width of the third lead frame can be reduced to a width that allows connection of one of the widths of the second connection portion or the fourth connection portion, thereby making it possible to reduce the size and cost of the semiconductor device. In addition, the distance between the first semiconductor element and the second semiconductor element is reduced, so that the semiconductor device can be reduced in size and cost. In addition, the distance between the semiconductor element and the end of the lead frame and the distance between the semiconductor elements arranged on the same lead frame are not significantly reduced, so that the difference in thermal resistance (heat dissipation to the lead frame) of the semiconductor element for each arrangement of the semiconductor element is eliminated, and the effect of thermal interference from other semiconductor elements can be reduced, so that an increase in the thermal resistance of the first semiconductor element and the second semiconductor element can be suppressed. Since an increase in the thermal resistance of the first semiconductor element and the second semiconductor element is suppressed, it is possible to reduce the size and cost of the semiconductor device by changing to a cheaper, smaller-sized semiconductor element and by miniaturizing the lead frame. [Brief description of the drawings]

[0011] [Figure 1] 1 is a plan view showing an outline of a configuration of a semiconductor device according to a first embodiment. [Diagram 2] 2 is a cross-sectional view showing an outline of the semiconductor device taken along the line AA in FIG. 1. [Diagram 3] 2 is a plan view showing a first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 4] 4 is a cross-sectional view of the first plate-shaped lead taken along the line BB in FIG. 3. [Diagram 5] 1 is a plan view showing an outline of the configuration of another semiconductor device according to the first embodiment. FIG. [Figure 6] 1 is a plan view showing an outline of the configuration of another semiconductor device according to the first embodiment. FIG. [Figure 7] 1 is a plan view showing an outline of the configuration of another semiconductor device according to the first embodiment. FIG. [Figure 8]1 is a plan view showing an outline of the configuration of another semiconductor device according to the first embodiment. FIG. [Figure 9] 1 is a plan view showing an outline of the configuration of another semiconductor device according to the first embodiment. FIG. [Figure 10] 10 is a cross-sectional view showing an outline of the configuration of another semiconductor device according to the first embodiment. FIG. [Figure 11] 11 is a plan view showing another first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 12] 11 is a plan view showing another first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 13] 11 is a plan view showing another first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 14] 11 is a cross-sectional view showing another first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 15] 11 is a cross-sectional view showing another first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 16] 11 is a cross-sectional view showing another first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 17] 11 is a cross-sectional view showing another first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 18] 11 is a cross-sectional view showing another first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 19] 11 is a plan view showing another first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 20] 11 is a plan view showing another first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 21] 1 is a plan view showing an outline of the configuration of another semiconductor device according to the first embodiment. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] Hereinafter, a semiconductor device according to an embodiment of the present invention will be described with reference to the drawings. In the drawings, the same or corresponding members and parts are denoted by the same reference numerals.

[0013] Embodiment 1 FIG. 1 is a plan view showing an outline of the configuration of a semiconductor device 1 according to the first embodiment, FIG. 2 is a cross-sectional view showing an outline of the semiconductor device 1 cut at the AA cross section position in FIG. 1, FIG. 3 is a plan view showing a first plate-like lead 3 of the semiconductor device 1, FIG. 4 is a cross-sectional view of the first plate-like lead 3 cut at the BB cross section position in FIG. 3, and FIG. 5 is a plan view showing an outline of the configuration of another semiconductor device 1 according to the first embodiment. In FIG. 1, FIG. 2, and FIG. 5, the resin member 6 is removed, and only the outer shape of the resin member 6 is shown. Although only the first plate-like lead 3 is shown in FIG. 3 and FIG. 4, in the present embodiment shown in FIG. 1, the first plate-like lead 3 and the second plate-like lead 4 have the same shape. The semiconductor device 1 is a device that rectifies a current by the operation of the first semiconductor element 21 and the second semiconductor element 22. The semiconductor device 1 is not limited to this, and may be a device that converts power by the switching operation of the first semiconductor element 21 and the second semiconductor element 22.

[0014] <Semiconductor device 1> The configuration of the semiconductor device 1 will be described. As shown in FIG. 1, the semiconductor device 1 includes a first lead frame 11, a second lead frame 12, a third lead frame 13, a first semiconductor element 21, a second semiconductor element 22, a first plate-like lead 3, and a second plate-like lead 4. In this embodiment, the semiconductor device 1 includes two first semiconductor elements 21 and two second semiconductor elements 22, but the number of each of the first semiconductor elements 21 and the second semiconductor elements 22 is not limited to two, and may be one or three or more. The number of semiconductor elements can be increased or decreased depending on the current handled by the semiconductor device 1, and the semiconductor device 1 can be configured at a low cost depending on the power. The first lead frame 11, the second lead frame 12, the third lead frame 13, the first plate-like lead 3, and the second plate-like lead 4 are made of a metal material such as copper or aluminum that has excellent electrical conductivity and thermal conductivity.

[0015] The first lead frame 11 is conductive, and the first semiconductor element 21 is electrically and thermally connected to the first first surface 11b1 of the first lead frame 11 by a bonding member 7 such as solder. The third lead frame 13 is arranged side by side with a gap between them and the first lead frame 11, has a third first surface 13b1 on the same side as the first first surface 11b1, and is conductive. The second lead frame 12 is arranged side by side with a gap between them and the third lead frame 13 on the opposite side to the first lead frame 11 side, has a second first surface 12b1 on the same side as the first first surface 11b1, and is conductive. The second semiconductor element 22 is electrically and thermally connected to the second first surface 12b1 of the second lead frame 12 by a bonding member 7 such as solder.

[0016] The first plate-like lead 3 is conductive and includes a first connection portion 31, a second connection portion 32, and a first coupling portion 35 that couples the first connection portion 31 and the second connection portion 32. The first connection portion 31 is bonded to the surface of the first semiconductor element 21 opposite to the side of the first lead frame 11 via a bonding member 7. The second connection portion 32 is bonded to the third first surface 13b1 via a bonding member 7. The second plate-like lead 4 is conductive and includes a third connection portion 41, a fourth connection portion 42, and a second coupling portion 45 that couples the third connection portion 41 and the fourth connection portion 42. The third connection portion 41 is bonded to the surface of the second semiconductor element 22 opposite to the side of the second lead frame 12 via a bonding member 7. The fourth connection portion 42 is bonded to the third first surface 13b1 via a bonding member 7. The bonding member 7 is, for example, solder.

[0017] The direction in which the first lead frame 11, the third lead frame 13, and the second lead frame 12 are arranged is the X direction, the direction parallel to the third first surface 13b1 and perpendicular to the X direction is the Y direction, and the direction perpendicular to the X direction and the Y direction is the Z direction. When viewed in the Z direction, the positional range of the first semiconductor element 21 in the Y direction and the positional range of the second semiconductor element 22 in the Y direction at least partially overlap, and the second connection portion 32 and the fourth connection portion 42 are arranged in the Y direction. In FIG. 1, when viewed in the Z direction, the Y direction positions of the center of the first semiconductor element 21 in the Y direction and the center of the second semiconductor element 22 in the Y direction coincide with each other. 5, the Y-direction center of the first semiconductor element 21 and the Y-direction center of the second semiconductor element 22 may not coincide with each other when viewed in the Z direction, and the Y-direction positional range of the first semiconductor element 21 and the Y-direction positional range of the second semiconductor element 22 may partially overlap each other. In addition, in FIG. 1, the second connection portion 32 and the fourth connection portion 42 are arranged with a gap therebetween in the Y direction, but the present invention is not limited to this, and the second connection portion 32 and the fourth connection portion 42 may be arranged in the Y direction while abutting each other.

[0018] With this configuration, the first semiconductor element 21 and the second semiconductor element 22 are arranged side by side in the X direction with the positional range of the first semiconductor element 21 in the Y direction and the positional range of the second semiconductor element 22 in the Y direction at least partially overlapping, and the second connection portion 32 and the fourth connection portion 42 are arranged side by side in the Y direction, so that the distance between the first semiconductor element 21 and the second semiconductor element 22 can be reduced. Since the distance between the first semiconductor element 21 and the second semiconductor element 22 is reduced, the semiconductor device 1 can be made smaller and less expensive. In addition, since it is not necessary to arrange the first semiconductor element 21 and the second semiconductor element 22 in a staggered manner, the expansion of each lead frame is suppressed, so that the semiconductor device 1 can be made smaller and less expensive.

[0019] In addition, when the semiconductor elements are arranged in a staggered pattern without changing the size of each lead frame, the distance between the semiconductor element and the end of the lead frame and the distance between the semiconductor elements arranged on the same lead frame are shortened, but in the above-mentioned configuration, the distance between the semiconductor element and the end of the lead frame and the distance between the semiconductor elements arranged on the same lead frame are not significantly shortened, so that the difference in thermal resistance (heat dissipation to the lead frame) of the semiconductor element for each arrangement of the semiconductor element is eliminated, and the influence of thermal interference from other semiconductor elements can be reduced, so that an increase in the thermal resistance of the first semiconductor element 21 and the second semiconductor element 22 can be suppressed. Since an increase in the thermal resistance of the first semiconductor element 21 and the second semiconductor element 22 is suppressed, the semiconductor device 1 can be made smaller and less expensive by changing to a cheaper, smaller-sized semiconductor element and by miniaturizing the lead frame.

[0020] Furthermore, since the second connection portion 32 and the fourth connection portion 42 are aligned in the Y direction, the width of the third lead frame 13 can be reduced to a width that allows the connection of one of the second connection portion 32 or the fourth connection portion 42, thereby making it possible to reduce the size and cost of the semiconductor device 1.

[0021] Moreover, by disposing the first semiconductor element 21 and the second semiconductor element 22 near the center of the first lead frame 11 and the second lead frame 12, respectively, the loss generated from the first semiconductor element 21 and the second semiconductor element 22 can be dissipated with high efficiency using the entire first lead frame 11 and the second lead frame 12. Since the loss generated from the first semiconductor element 21 and the second semiconductor element 22 is dissipated with high efficiency, the thermal resistance of the first semiconductor element 21 and the second semiconductor element 22 is reduced, and the size of the first semiconductor element 21 and the second semiconductor element 22 and the size of the first lead frame 11 and the second lead frame 12 can be reduced. Since the size of the first semiconductor element 21 and the second semiconductor element 22 and the size of the first lead frame 11 and the second lead frame 12 are reduced, the semiconductor device 1 can be made smaller and less expensive.

[0022] Furthermore, when viewed in the Z direction, if the Y-direction center of the first semiconductor element 21 and the Y-direction center of the second semiconductor element 22 are aligned in position in the Y direction, the distance of the first semiconductor element 21 from the end of the first lead frame 11 and the distance of the second semiconductor element 22 from the end of the second lead frame 12 can be made equal. Since the distance of the first semiconductor element 21 from the end of the first lead frame 11 and the distance of the second semiconductor element 22 from the end of the second lead frame 12 are made equal, the difference in thermal resistance of each semiconductor element for each arrangement of the semiconductor elements can be further reduced.

[0023] Next, a configuration in which the semiconductor device 1 includes an insulating heat dissipation member 5 and a resin member 6 will be described. In this embodiment, the first lead frame 11, the second lead frame 12, the third lead frame 13, the first semiconductor element 21, the second semiconductor element 22, the first plate-like lead 3, and the second plate-like lead 4 are sealed with the resin member 6 having insulating properties. The portions of the first lead frame 11, the second lead frame 12, and the third lead frame 13 that are connected to the outside are exposed from the resin member 6. The resin member 6 is, for example, an epoxy resin.

[0024] With this configuration, insulation between the components inside the semiconductor device 1 is ensured, and the distance between the components inside the semiconductor device 1 is shortened, making it possible to miniaturize the semiconductor device 1. Also, insulation between the internal parts having potential of the semiconductor device 1 and the components outside the semiconductor device 1 can be ensured, making it possible to reduce the distance between the components inside and outside the semiconductor device 1. Since the distance between the components is reduced, it is possible to miniaturize and reduce the cost of a power conversion device or the like incorporating the semiconductor device 1.

[0025] In this embodiment, the semiconductor device 1 includes an insulating heat dissipation member 5 to which a first second surface 11b2 opposite to the first first surface 11b1 of the first lead frame 11, a second second surface 12b2 opposite to the second first surface 12b1 of the second lead frame 12, and a third second surface 13b2 opposite to the third first surface 13b1 of the third lead frame 13 are thermally connected. The insulating heat dissipation member 5 is formed of a resin member such as silicone having insulating properties. The insulating heat dissipation member 5 has higher heat dissipation properties than the resin member 6.

[0026] With this configuration, heat from the semiconductor device 1 is dissipated to the outside via the insulating heat dissipation member 5, so that the heat dissipation of the semiconductor device 1 can be improved while ensuring the insulation of the semiconductor device 1. Furthermore, since the insulation of the semiconductor device 1 is ensured, the insulating heat dissipation member 5 side of the semiconductor device 1 can be thermally directly connected to a cooling member made of metal via a heat dissipation member such as grease, so that the temperatures of the first semiconductor element 21 and the second semiconductor element 22 can be further reduced. Since the temperatures of the first semiconductor element 21 and the second semiconductor element 22 are further reduced, the semiconductor device 1 can be further miniaturized and reduced in cost.

[0027] In this embodiment, the semiconductor device 1 is fabricated by transfer molding using a resin molding die. The portions supported by the resin molding die are the portions of each lead frame protruding from the resin member 6 (terminal portions described later) and the portion opposite the side of each lead frame of the insulating heat dissipation member 5. Sealing with a resin member is not limited to transfer molding. It is also possible to accommodate the first lead frame 11, the second lead frame 12, the third lead frame 13, the first semiconductor element 21, the second semiconductor element 22, the first plate-like lead 3, and the second plate-like lead 4 in a resin case, and inject a sealing member such as gel into the inside of the resin case.

[0028] <Lead frame> The details of the configuration of each member will be described. First, the configuration of the lead frame will be described. As shown in FIG. 1, the first lead frame 11 has a first terminal portion 11a connected to an external component and a first mounting portion 11b thermally connected to the insulating heat dissipation member 5 at a first second surface 11b2. The first first surface 11b1 is provided on the first mounting portion 11b. The second lead frame 12 has a second terminal portion 12a connected to an external component and a second mounting portion 12b thermally connected to the insulating heat dissipation member 5 at a second second surface 12b2. The second first surface 12b1 is provided on the second mounting portion 12b. The third lead frame 13 has a third terminal portion 13a connected to an external component and a third mounting portion 13b thermally connected to the insulating heat dissipation member 5 at a third second surface 13b2. The third first surface 13b1 is provided on the third mounting portion 13b. The first terminal portion 11a, the second terminal portion 12a, and a portion of the third terminal portion 13a are exposed from the resin member 6. As shown in Fig. 2, the insulating heat dissipation member 5 has a surface exposed from the resin member 6 opposite to the surface to which each lead frame is thermally connected.

[0029] In this embodiment, the thickness of each of the first mounting portion 11b, the second mounting portion 12b, and the third mounting portion 13b is thicker than the thickness of each of the first terminal portion 11a, the second terminal portion 12a, and the third terminal portion 13a. By reducing the thickness of the first terminal portion 11a, the second terminal portion 12a, and the third terminal portion 13a, the semiconductor device 1 can be made smaller. By increasing the thickness of the first mounting portion 11b, the second mounting portion 12b, and the third mounting portion 13b, the loss of the first semiconductor element 21 and the second semiconductor element 22 can be efficiently dissipated to the outside through each mounting portion. In addition, since the entire mounting portion contributes to cooling the first semiconductor element 21 and the second semiconductor element 22, the first semiconductor element 21 and the second semiconductor element 22 can be cooled efficiently, and the thermal resistance of the first semiconductor element 21 and the second semiconductor element 22 can be reduced while suppressing the increase in size of the semiconductor device 1 due to the increase in the thickness of the mounting portion. Furthermore, since the thermal resistance of the first semiconductor element 21 and the second semiconductor element 22 is reduced, it is possible to change to cheaper and smaller-sized semiconductor elements, and therefore the cost of the semiconductor device 1 can be further reduced.

[0030] The first lead frame 11, the second lead frame 12, and the third lead frame 13 are made from a metal plate material such as copper or aluminum having a certain thickness by pressing, rolling, or punching with a die. The method of making each lead frame is not limited to this, and they may be made by subjecting a metal plate material to laser processing or etching. By these manufacturing methods, each lead frame can be easily manufactured. In this embodiment, as shown in FIG. 2, the first terminal portion 11a, the second terminal portion 12a, and the third terminal portion 13a are exposed from the resin member 6, and then bent in the Z direction, and each end is connected to another component.

[0031] In this embodiment, the thickness of each of the first mounting portion 11b, the second mounting portion 12b, and the third mounting portion 13b is thicker than the thickness of each of the first terminal portion 11a, the second terminal portion 12a, and the third terminal portion 13a, but this is not limited to the above. The thickness of each of the first mounting portion 11b, the second mounting portion 12b, and the third mounting portion 13b may be the same as the thickness of each of the first terminal portion 11a, the second terminal portion 12a, and the third terminal portion 13a. When the thickness of each mounting portion and each terminal portion is the same, processing such as rolling to locally change the thickness of a single sheet metal is not required. Since the manufacturing method is simple by pressing or punching, the processing of the lead frame is simplified, and the manufacturing cost of the lead frame can be reduced.

[0032] In the present embodiment, the first lead frame 11, the second lead frame 12, and the third lead frame 13 are made of flat metal members, but the present invention is not limited to this. The first lead frame 11, the second lead frame 12, and the third lead frame 13 may be a part of an electronic circuit formed on a substrate with a metal pattern. By configuring in this way, the heat loss of the first semiconductor element 21 and the second semiconductor element 22 can be dissipated more efficiently, and the semiconductor device 1 can be further reduced in size and cost.

[0033] <First semiconductor element 21, second semiconductor element 22> In this embodiment, the first semiconductor element 21 and the second semiconductor element 22 are, for example, diodes. The first semiconductor element 21 and the second semiconductor element 22 are not limited to diodes. The first semiconductor element 21 and the second semiconductor element 22 may be, for example, MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), IGBTs (Insulated Gate Bipolar Transistors), or bipolar transistors. The first semiconductor element 21 and the second semiconductor element 22 are formed on a semiconductor substrate made of a wide-gap semiconductor such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN), gallium oxide (GaO), or diamond.

[0034] The bonding member 7 is, for example, solder, but is not limited to solder. The bonding member 7 may be made of other electrically connectable materials such as silver. By using such materials, the thermal resistance of the semiconductor element can be further reduced. Since the thermal resistance can be reduced, the size of each lead frame can be reduced and the semiconductor element can be changed to a smaller size, so that the semiconductor device 1 can be reduced in size and cost.

[0035] In this embodiment, the semiconductor device 1 includes a plurality of first semiconductor elements 21 and a plurality of second semiconductor elements 22, and the number of the plurality of first semiconductor elements 21 is equal to the number of the plurality of second semiconductor elements 22. In this embodiment, the number of each of the first semiconductor elements 21 and the second semiconductor elements 22 is two. With this configuration, the first lead frame 11 and the second lead frame 12 can be made to have the same shape, so that the cost of the first lead frame 11 and the second lead frame 12 can be reduced. In addition, since the distance from the end of the first semiconductor element 21 to the end of the first lead frame 11 and the distance from the end of the second semiconductor element 22 to the end of the second lead frame 12 are equal, the difference in thermal resistance of each semiconductor element for each arrangement of the semiconductor elements can be reduced, so that the first semiconductor element 21 and the second semiconductor element 22 can each have the same heat dissipation effect.

[0036] In this embodiment, the multiple first semiconductor elements 21 and the multiple second semiconductor elements 22 are arranged in the Y direction. With this configuration, the width in the X direction of the first lead frame 11 and the second lead frame 12 can be reduced to the minimum width required for heat dissipation of each semiconductor element in addition to the width in the X direction of each semiconductor element, so that the first lead frame 11 and the second lead frame 12 can be made smaller. Also, the cost of the first lead frame 11 and the second lead frame 12 can be reduced.

[0037] <First plate-shaped lead 3, second plate-shaped lead 4> Next, the first plate-like lead 3 and the second plate-like lead 4, which are essential parts of the present application, will be described. In the present embodiment shown in FIG. 1, the first plate-like lead 3 and the second plate-like lead 4 have the same shape, so the first plate-like lead 3 will be described as an example with reference to FIGS. 3 and 4. In this embodiment, the first plate-like lead 3 has two step portions 300, and the first connection portion 31 and the second connection portion 32 have the same length in the Y direction and different lengths in the X direction. The length of the first connection portion 31 in the Y direction is a1, the length in the X direction is b1, the length of the second connection portion 32 in the Y direction is a2, and the length in the X direction is b2. In this embodiment, a1=a2, b1>b2. As shown in FIG. 1, the first connection portion 31 is provided inside the outer periphery of the first semiconductor element 21, and the width of the second connection portion 32 in the X direction is smaller than the width of the third lead frame 13 in the X direction. In this embodiment, as shown in Fig. 4, the first connecting portion 31 and the second connecting portion 32 have different heights in the Z direction. The first plate-like lead 3 and the second plate-like lead 4 are made from a metal plate material having a certain thickness, such as copper or aluminum, by pressing or punching with a die, followed by bending. The shapes and effects of the first plate-like lead 3 and the second plate-like lead 4 will be described below.

[0038] In this embodiment, the first plate-like lead 3 and the second plate-like lead 4 have the same shape. With this configuration, since the first plate-like lead 3 and the second plate-like lead 4 are the same member, there is no need to manufacture them separately, and management of each member becomes easier, so that the productivity of the semiconductor device 1 can be improved. Also, the cost of the semiconductor device 1 can be reduced.

[0039] In this embodiment, the center of the second connection portion 32 in the Y direction is disposed on one side of the center of the first connection portion 31 in the Y direction, at a distance of at least 1 / 2 of the width of the second connection portion 32 in the Y direction, and the center of the fourth connection portion 42 in the Y direction is disposed on the other side of the center of the third connection portion 41 in the Y direction, at a distance of at least 1 / 2 of the width of the fourth connection portion 42 in the Y direction. In FIG. 3, a straight line passing through the center of the first connection portion 31 in the Y direction and parallel to the X direction is defined as the first connection portion center line 31a, and a straight line passing through the center of the second connection portion 32 in the Y direction and parallel to the X direction is defined as the second connection portion center line 32a. The first connection portion center line 31a and the second connection portion center line 32a are indicated by dashed lines. A distance Y1 between the first connection portion center line 31a and the second connection portion center line 32a is at least 1 / 2 of the width of the second connection portion 32 in the Y direction. One side of the Y direction is the direction of the Y-axis arrow shown in the figure, and the other side of the Y direction is the opposite direction of the Y-axis arrow.

[0040] 6, the center of the second connection portion 32 in the Y direction may be disposed on the other side in the Y direction from the center of the first connection portion 31 in the Y direction by more than half the width in the Y direction of the second connection portion 32, and the center of the fourth connection portion 42 in the Y direction may be disposed on one side in the Y direction from the center of the third connection portion 41 in the Y direction by more than half the width in the Y direction of the fourth connection portion 42. FIG. 6 is a plan view showing an outline of the configuration of the semiconductor device 1 according to a modification of the first embodiment, with the resin member 6 removed and only the outer shape of the resin member 6 being shown.

[0041] With this configuration, the Y-direction positions of the center of the first semiconductor element 21 in the Y direction and the center of the second semiconductor element 22 in the Y direction can be aligned when viewed in the Z direction. Since the Y-direction positions of the center of the first semiconductor element 21 in the Y direction and the center of the second semiconductor element 22 in the Y direction are aligned, the distance of the first semiconductor element 21 from the end of the first lead frame 11 and the distance of the second semiconductor element 22 from the end of the second lead frame 12 can be made equal. Since the distance of the first semiconductor element 21 from the end of the first lead frame 11 and the distance of the second semiconductor element 22 from the end of the second lead frame 12 are made equal, the difference in thermal resistance of each semiconductor element for each arrangement of the semiconductor elements can be further reduced.

[0042] In this embodiment, as shown in FIG. 4, the first connecting portion 31 and the second connecting portion 32 are located at different positions in the Z direction from the first connecting portion 35, and the third connecting portion 41 and the fourth connecting portion 42 are located at different positions in the Z direction from the second connecting portion 45. This configuration makes it possible to easily determine the area where the joining member 7 is attached to each joint. In addition, the thickness of the joining member 7 can be made equal. Since the area where the joining member 7 is attached is determined and the thickness of the joining member 7 is stable, it is possible to suppress contact between the joining member 7 and other members. Since contact between the joining member 7 and other members is suppressed, it is possible to suppress insulation failure.

[0043] In this embodiment, as viewed in the Z direction, the outer edges of the first connecting portion 35 of the first plate-like lead 3 and the second connecting portion 45 of the second plate-like lead 4 have at least one step that changes in the Y direction. The step that changes in the Y direction is called the step portion 300. The first plate-like lead 3 shown in FIG. 3 has two step portions 300. This configuration can improve the self-supporting property of each plate-like lead. By improving the self-supporting property of each plate-like lead, when mounting the plate-like lead, the equipment used for mounting can easily grasp the plate-like lead placed in a stable state in a case or the like. Since the equipment used for mounting can easily grasp the plate-like lead, errors caused by the equipment failing to grasp during manufacturing are reduced, so that the manufacturing cost of the semiconductor device 1 can be reduced and the productivity of the semiconductor device 1 can be improved.

[0044] In this embodiment, the area of ​​the second connection portion 32 is smaller than the area of ​​the first connection portion 31, and the area of ​​the fourth connection portion 42 is smaller than the area of ​​the third connection portion 41. By configuring in this manner, the areas of the second connection portion 32 and the fourth connection portion 42 can be reduced regardless of the sizes of the first semiconductor element 21 and the second semiconductor element 22. Since the areas of the second connection portion 32 and the fourth connection portion 42 are reduced, the width of the third lead frame 13 in the X direction can be reduced. Since the width of the third lead frame 13 in the X direction is reduced, the third lead frame 13 can be made smaller and less expensive, and the semiconductor device 1 can be made smaller and less expensive.

[0045] In this embodiment, the first connection portion 31 is provided inside the outer periphery of the first semiconductor element 21, and the third connection portion 41 is provided inside the outer periphery of the second semiconductor element 22. With this configuration, the region to which the bonding member 7 is attached is inside the outer periphery of the first semiconductor element 21 and the second semiconductor element 22, so that the bonding member 7 does not flow out beyond the outer periphery of the first semiconductor element 21 and the second semiconductor element 22, and therefore contact between the bonding member 7 and other members can be suppressed. Since contact between the bonding member 7 and other members is suppressed, insulation failure inside the semiconductor device 1 can be suppressed.

[0046] In this embodiment, the height in the Z direction of the surface of the first connection portion 31 on the side of the first semiconductor element 21 is different from the height in the Z direction of the surface of the second connection portion 32 on the side of the third lead frame 13, and the height in the Z direction of the surface of the third connection portion 41 on the side of the second semiconductor element 22 is different from the height in the Z direction of the surface of the fourth connection portion 42 on the side of the third lead frame 13. The first connection portion 31 is shifted in the Z direction from the second connection portion 32 by a distance D1 shown in FIG. 4. With this configuration, the first connection portion 31 can be shifted in the Z direction by the thickness of the first semiconductor element 21 and the bonding member 7, and the third connection portion 41 can be shifted in the Z direction by the thickness of the second semiconductor element 22 and the bonding member 7. Therefore, the first semiconductor element 21 and the first connection portion 31, and the second semiconductor element 22 and the third connection portion 41 can be made to face each other and reliably connected to each other without changing the thickness of each lead frame.

[0047] In this embodiment, the first connection portion 31, the second connection portion 32, and the first linking portion 35 have the same thickness, and the third connection portion 41, the fourth connection portion 42, and the second linking portion 45 have the same thickness. In FIG. 4, if the thickness of the first connection portion 31 is D2, the thickness of the second connection portion 32 is D3, and the thickness of the first linking portion 35 is D4, then D2=D3=D4. With this configuration, the first plate-like lead 3 and the second plate-like lead 4 can be manufactured from a single plate material of the same thickness, and therefore the cost of the first plate-like lead 3 and the second plate-like lead 4 can be reduced. Since the cost of the first plate-like lead 3 and the second plate-like lead 4 is reduced, the cost of the semiconductor device 1 can be reduced.

[0048] In this embodiment, each of the first connection portion 31, the second connection portion 32, the third connection portion 41, and the fourth connection portion 42 has a first through hole penetrating in the Z direction. In the figure, the first through hole of the first connection portion 31 and the second connection portion 32 is referred to as the first through hole 33, and the first through hole of the third connection portion 41 and the fourth connection portion 42 is referred to as the first through hole 43. The first through hole 33 is filled with a bonding member 7 such as solder, and the first connection portion 31 and the first semiconductor element 21, and the second connection portion 32 and the third lead frame 13 are connected. Similarly, the first through hole 43 is filled with a bonding member 7 such as solder, and the third connection portion 41 and the second semiconductor element 22, and the fourth connection portion 42 and the third lead frame 13 are connected.

[0049] In this embodiment, the first connection portion 31 and the second connection portion 32 are offset in the Y direction, and the third connection portion 41 and the fourth connection portion 42 are offset in the Y direction, so that a torsional force may be applied to the first plate-like lead 3 and the second plate-like lead 4 due to the influence of the flow of the resin member 6 during resin molding and thermal stress during operation of the semiconductor device 1. When a torsional force is applied to the first plate-like lead 3 and the second plate-like lead 4, a force acts on each of the first connection portion 31, the second connection portion 32, the third connection portion 41, and the fourth connection portion 42 in a direction away from the respective joint points.

[0050] By providing the first through hole 33 and the first through hole 43, the bonding material 7 is filled into the first through hole 33 and the first through hole 43, and therefore the adhesion strength of the first connection portion 31, the second connection portion 32, the third connection portion 41, and the fourth connection portion 42 is improved, and therefore the force acting in a direction away from the joint of these connection portions can be suppressed. Since the force acting in a direction away from the joint portion is suppressed, electrical short circuits and disconnections that occur when these connection portions are separated can be suppressed. Since electrical short circuits and disconnections are suppressed, the reliability of the semiconductor device 1 can be improved.

[0051] In this embodiment, each of the first connecting portion 35 and the second connecting portion 45 has at least one second through hole penetrating in the Z direction. In the drawing, the second through hole of the first connecting portion 35 is referred to as the second through hole 34, and the second through hole of the second connecting portion 45 is referred to as the second through hole 44. The second through hole 34 and the second through hole 44 are filled with a resin member 6, and the second through hole 34 and the second through hole 44, and the first connecting portion 35 and the second connecting portion 45 are fixed inside the semiconductor device 1 by the surrounding resin member 6. Although the shape of the second through holes 34 and 44 is shown as a circle, the shape of the second through holes 34 and 44 is not limited to a circle.

[0052] By providing the second through hole 34 and the second through hole 44, tilting of the first plate-like lead 3 and the second plate-like lead 4 during resin molding can be suppressed, and the flow of the resin member 6 can be made smooth. Since tilting of the first plate-like lead 3 and the second plate-like lead 4 is suppressed and the flow of the resin is made smooth, the semiconductor device 1 can be manufactured easily and the manufacturing cost of the semiconductor device 1 can be reduced. Furthermore, since the adhesive strength between the resin member 6 and the first plate-like lead 3 and the second plate-like lead 4 is improved, the reliability of the semiconductor device 1 can be improved.

[0053] In this embodiment, the cross-sectional area of ​​the first coupling part 35 cut in the Z direction, including the second through hole 34, is larger than the cross-sectional areas of the end of the first connecting part 31 on the other side in the X direction opposite the first coupling part 35 and the end of the second connecting part 32 on one side in the X direction opposite the first coupling part 35, and the cross-sectional area of ​​the second coupling part 45 cut in the Z direction, including the second through hole 44, is larger than the cross-sectional areas of the end of the third connecting part 41 on one side in the X direction opposite the second coupling part 45 and the end of the fourth connecting part 42 on the other side in the X direction opposite the second coupling part 45. The cross-sectional area of ​​the first coupling part 35 cut in the Z direction, including the second through hole 34, is, for example, the cross-sectional area of ​​the first coupling part 35 cut in the Z direction at the dashed lines E1 and E2 shown in FIG. 3. One side in the X direction is the direction of the X-axis arrow shown in the figure, and the other side in the X direction is the opposite direction to the X-axis arrow.

[0054] With this configuration, it is possible to prevent the cross-sectional area through which current flows in the first connecting portion 35 and the second connecting portion 45 from becoming locally small by providing the second through holes 34, 44. Since the cross-sectional area through which current flows in the first connecting portion 35 and the second connecting portion 45 is prevented from becoming locally small, it is possible to prevent an increase in local loss in the first connecting portion 35 and the second connecting portion 45. Since an increase in local loss in the first connecting portion 35 and the second connecting portion 45 is prevented, it is possible to reduce the temperature inside the semiconductor device 1, thereby enabling the semiconductor device 1 to be made smaller and less expensive.

[0055] The second through holes 34, 44 are provided at positions adjacent to the outer edges of the first connecting portion 35 and the second connecting portion 45. With this configuration, compared to the case where the second through holes 34, 44 are provided at the center of the first connecting portion 35 and the second connecting portion 45, tilting of the first plate-like lead 3 and the second plate-like lead 4 during resin molding can be further suppressed and the flow of the resin member 6 can be made smoother. Since tilting of the first plate-like lead 3 and the second plate-like lead 4 is further suppressed and the flow of the resin is made smoother, the semiconductor device 1 can be manufactured more easily and the manufacturing cost of the semiconductor device 1 can be further reduced.

[0056] <Variation 1> A first modified example of the semiconductor device 1 will be described with reference to Fig. 7. In the semiconductor device 1 shown in Fig. 1, the first plate-like lead 3 and the second plate-like lead 4 have the same shape, but this is not limited to this. In the semiconductor device 1 of the first modified example, when viewed in the Z direction, the Y-direction positions of the center of the first connection portion 31 and the center of the second connection portion 32 match, and the first linking portion 35 extends in the X direction, or the Y-direction positions of the center of the third connection portion 41 and the center of the fourth connection portion 42 match, and the second linking portion 45 extends in the X direction.

[0057] 7 is a plan view showing an outline of the configuration of the semiconductor device 1 according to a modification of the first embodiment, in which the resin member 6 has been removed and only the outline of the resin member 6 is shown. In FIG. 7, the Y-direction positions of the center of the third connection portion 41 and the center of the fourth connection portion 42 in the Y-direction coincide with each other, the second coupling portion 45 extends in the X-direction, and the second plate-like lead 4 is formed in a straight line. The first plate-like lead 3 may also be formed in a straight line. With this configuration, one of the first plate-like lead 3 and the second plate-like lead 4 has a simple straight line shape, so that the manufacturing cost of the semiconductor device 1 can be reduced.

[0058] <Variation 2> A second modified example of the semiconductor device 1 will be described with reference to FIG. 8. FIG. 8 is a plan view showing an outline of the configuration of the semiconductor device 1 according to the first modified example of the embodiment 1, in which the resin member 6 is removed and only the outer shape of the resin member 6 is shown. In the semiconductor device 1 of the second modified example, the first terminal portion 11a and the first mounting portion 11b are made of different members, the second terminal portion 12a and the second mounting portion 12b are made of different members, and the third terminal portion 13a and the third mounting portion 13b are made of different members. The first terminal portion 11a and the first mounting portion 11b are electrically connected by, for example, a straight lead 11c made of a conductive metal. The first terminal portion 11a and the first mounting portion 11b are connected to the straight lead 11c by, for example, welding. Similarly, the second terminal portion 12a and the second mounting portion 12b are electrically connected by a straight lead 12c, and the third terminal portion 13a and the third mounting portion 13b are electrically connected by a straight lead 13c.

[0059] With this configuration, the shapes of the first mounting portion 11b, the second mounting portion 12b, and the third mounting portion 13b are simplified, and therefore it is possible to easily manufacture the first lead frame 11, the second lead frame 12, and the third lead frame 13. Since the first lead frame 11, the second lead frame 12, and the third lead frame 13 can be easily manufactured, the productivity of the semiconductor device 1 can be improved.

[0060] <Variation 3> A third modification of the semiconductor device 1 will be described with reference to FIG. 9. FIG. 9 is a plan view showing an outline of the configuration of the semiconductor device 1 according to the first embodiment, in which the resin member 6 is removed and only the outer shape of the resin member 6 is shown. In the semiconductor device 1 shown in FIG. 1, the first lead frame 11, the second lead frame 12, and the third lead frame 13 are arranged on the other surface of the insulating heat dissipation member 5, one surface of which is exposed from the resin member 6, but this is not limited to this. The semiconductor device 1 of the third modification shown in FIG. 9 does not include the insulating heat dissipation member 5. The first second surface 11b2 of the first lead frame 11, the second second surface 12b2 of the second lead frame 12, and the third second surface 13b2 of the third lead frame 13 do not have to be exposed from the resin member 6. Since the semiconductor device 1 does not include the insulating heat dissipation member 5, the cost of the semiconductor device 1 can be reduced.

[0061] <Variation 4> A fourth modified example of the semiconductor device 1 will be described with reference to FIG. 10. FIG. 10 is a cross-sectional view of a modified example of the first embodiment cut at the same position as FIG. 2, in which the resin member 6 has been removed and only the outer shape of the resin member 6 is shown. In the semiconductor device 1 of the fourth modified example, the insulating heat dissipation member 5 is configured by overlapping an insulating resin member layer 51 and a heat dissipation member layer 52 made of copper, aluminum, or the like and having high heat dissipation properties. By configuring in this way, the loss of the first semiconductor element 21 and the second semiconductor element 22 can be dissipated more efficiently, and the thermal resistance of the first semiconductor element 21 and the second semiconductor element 22 can be reduced. Since the thermal resistance of the first semiconductor element 21 and the second semiconductor element 22 is reduced, the size of each lead frame can be reduced and can be changed to a smaller, less expensive semiconductor element, so that the semiconductor device 1 can be reduced in size and cost.

[0062] <Variation 5> The fifth modification of the semiconductor device 1 will be described with reference to FIGS. 11 and 12. FIGS. 11 and 12 are plan views showing the first plate-like lead 3 of the semiconductor device 1 according to the first modification of the first embodiment. The first plate-like lead 3 shown in FIG. 3 has two step portions 300, but this is not limited thereto. The first plate-like lead 3 of the fifth modification shown in FIG. 11 has one step portion 300. The first plate-like lead 3 of the fifth modification shown in FIG. 12 does not have the step portion 300. Even with this configuration, it is possible to obtain a semiconductor device 1 that is small and inexpensive while suppressing an increase in the thermal resistance of the semiconductor element. In addition, when the first connecting portion 35 does not have the step portion 300, it is preferable to provide a protrusion 36 on the first connecting portion 35 and provide a second through hole 34 on the protrusion 36 as shown in FIG. 12. By providing the second through hole 34 on the protrusion 36, it is possible to suppress a localized reduction in the cross-sectional area through which the current flows in the first connecting portion 35.

[0063] <Variation 6> A sixth modified example of the semiconductor device 1 will be described with reference to FIG. 13. FIG. 13 is a plan view showing the first plate-like lead 3 of the semiconductor device 1 according to a modified example of the first embodiment. In the first plate-like lead 3 shown in FIG. 3, the second through hole 34 is provided at a position adjacent to the outer edge of the first connecting portion 35, but this is not limited thereto. The first plate-like lead 3 of the sixth modified example shown in FIG. 13 has the second through hole 34 near the center of the first connecting portion 35. With this configuration, the first plate-like lead 3 has a simple shape while maintaining the adhesive strength with the resin member 6, and therefore the manufacturing cost of the plate-like lead can be reduced.

[0064] <Variation 7> A seventh modified example of the semiconductor device 1 will be described with reference to FIGS. 14 and 15. FIG. 14 is a cross-sectional view of the first plate-like lead 3 cut at the same position as in FIG. 4 according to a modified example of the first embodiment, and FIG. 15 is a cross-sectional view of the first plate-like lead 3 cut at the same position as in FIG. 4 according to a modified example of the first embodiment, including a portion where the first plate-like lead 3 and the first plate-like lead 3 are connected. In the first plate-like lead 3 shown in FIG. 4, the first connection portion 31 is shifted in the Z direction from the second connection portion 32 by a distance D1, but this is not limited to this. As shown in FIGS. 14 and 15, the heights of the first connection portion 31 and the second connection portion 32 in the Z direction may be the same. With this configuration, the first plate-like lead 3 has a simple shape, and therefore the manufacturing cost of the plate-like lead can be reduced.

[0065] <Variation 8> The eighth modified example of the semiconductor device 1 will be described with reference to FIG. 16. FIG. 16 is a cross-sectional view of the first plate-like lead 3 cut at the same position as in FIG. 4 according to the first modified example of the embodiment 1, including the portion where the first plate-like lead 3 is connected to the first plate-like lead 3. The first plate-like lead 3 shown in FIG. 4 is formed by bending in which the first connection portion 31 is shifted in the Z direction from the second connection portion 32 by a distance of D1, where D2=D3=D4, but this is not limited thereto. As shown in FIG. 16, the thickness of the first connection portion 31 is formed thinner than the thickness of the second connection portion 32 by at least the thickness of the first semiconductor element 21, and the thickness of the third connection portion 41 is formed thinner than the thickness of the fourth connection portion 42 by at least the thickness of the second semiconductor element 22.

[0066] By configuring in this manner, the thickness of the first connection portion 31 can be reduced by the thickness of the first semiconductor element 21 and the bonding member 7, and the thickness of the third connection portion 41 can be reduced by the thickness of the second semiconductor element 22 and the bonding member 7. Therefore, the first semiconductor element 21 and the first connection portion 31, and the second semiconductor element 22 and the third connection portion 41 can be arranged opposite each other and reliably connected to each other without changing the thickness of each lead frame.

[0067] <Variation 9> A ninth modification of the semiconductor device 1 will be described with reference to FIGS. 17 and 18. FIGS. 17 and 18 are cross-sectional views of the first plate-like lead 3 cut at the same position as in FIG. 4 according to a modification of the first embodiment. The second through hole 34 shown in FIG. 4 has the same size of the opening on one side in the Z direction as the opening on the other side in the Z direction, but this is not limited to this. As shown in FIGS. 17 and 18, the second through hole 34 may have a different size of the opening on one side in the Z direction from the opening on the other side in the Z direction. FIG. 17 shows an example in which the size of the opening on one side in the Z direction is smaller than the size of the opening on the other side in the Z direction, and FIG. 18 shows an example in which the size of the opening on one side in the Z direction is larger than the size of the opening on the other side in the Z direction. The one side in the Z direction is the direction of the Z-axis arrow shown in the figure, and the other side in the Z direction is the opposite direction to the Z-axis arrow.

[0068] With this configuration, an appropriate direction for widening the openings of the second through holes 34, 44 can be selected according to the stress appropriately applied to the first plate-like lead 3 and the second plate-like lead 4 due to the shapes of the components of the semiconductor device 1 and the gate and other conditions when the semiconductor device 1 is molded, thereby improving the adhesion between the resin member 6 and the first plate-like lead 3 and the second plate-like lead 4. Since the adhesion between the resin member 6 and the first plate-like lead 3 and the second plate-like lead 4 is improved, the reliability of the semiconductor device 1 can be increased.

[0069] <Modification 10> A modification example 10 of the semiconductor device 1 will be described with reference to FIGS. 19 and 20. FIGS. 19 and 20 are plan views showing the first plate-like lead 3 of the semiconductor device 1 according to the modification example of Embodiment 1. In the first plate-like lead 3 shown in FIG. 3, the lengths in the Y direction of the first connection portion 31 and the second connection portion 32 are the same, and the lengths in the X direction are different, but it is not limited to this. In the first plate-like lead 3 of the modification example 10 shown in FIG. 19, the lengths in the X direction of the first connection portion 31 and the second connection portion 32 are the same, and the lengths in the Y direction are different, where a1 < a2 and b1 = b2. In the first plate-like lead 3 of the modification example 10 shown in FIG. 20, since the lengths in the X direction and the Y direction of the first connection portion 31 and the second connection portion 32 are the same, a1 = a2 and b1 = b2. By configuring in this way, according to conditions such as the current handled by the semiconductor device 1, the size of the semiconductor element used, and manufacturing constraints, the first connection portion 31 and the second connection portion 32 of an appropriate size can be selected, so that the semiconductor device 1 can be miniaturized and cost-reduced.

[0070] <Modification Example 11> The semiconductor device 1 according to the modified example 11 will be described with reference to FIG. 21. FIG. 21 is a plan view showing an outline of the configuration of the semiconductor device 1 according to the modified example of the first embodiment, in which the resin member 6 is removed and only the outer shape of the resin member 6 is shown. In the semiconductor device 1 shown in FIG. 1, the first terminal portion 11a, the second terminal portion 12a, and the third terminal portion 13a protrude from the resin member 6 to one side in the Y direction, but this is not limited to this. In the semiconductor device 1 according to the modified example 11 shown in FIG. 21, the first terminal portion 11a and the third terminal portion 13a protrude from the resin member 6 to the other side in the X direction. In this way, the direction in which the first terminal portion 11a, the second terminal portion 12a, and the third terminal portion 13a protrude from the resin member 6 can be freely selected. Since the direction in which the first terminal portion 11a, the second terminal portion 12a, and the third terminal portion 13a protrude from the resin member 6 can be selected, the arrangement of the external components connected to the semiconductor device 1 can be freely changed. Since the arrangement of external components connected to the semiconductor device 1 can be freely changed, it is possible to improve the degree of freedom in the layout of the entire product including the semiconductor device 1. Since the degree of freedom in the layout of the entire product including the semiconductor device 1 is improved, it is possible to miniaturize the product by optimizing the layout inside the product, and it is possible to reduce the cost of the product by eliminating unnecessary connecting parts.

[0071] As described above, the semiconductor device 1 according to the first embodiment includes a first lead frame, a first semiconductor element connected to the first lead frame, a third lead frame provided with a third first surface, a second lead frame, a second semiconductor element connected to the second lead frame, a first plate-like lead provided with a first connection portion bonded to the first semiconductor element, a second connection portion bonded to the third first surface, and a first coupling portion coupling the first connection portion and the second connection portion, and a second plate-like lead bonded to the second semiconductor element. The semiconductor device 1 includes a second plate-like lead having a third connection portion bonded to the third first surface, a fourth connection portion bonded to the third first surface, and a second connection portion connecting the third connection portion and the fourth connection portion, and as viewed in the Z direction, the positional range of the first semiconductor element in the Y direction and the positional range of the second semiconductor element in the Y direction at least partially overlap, and the second connection portion and the fourth connection portion are arranged in the Y direction, so that the distance between the first semiconductor element 21 and the second semiconductor element 22 is reduced, thereby making it possible to reduce the size and cost of the semiconductor device 1. Also, since the second connection portion 32 and the fourth connection portion 42 are arranged in the Y direction, the width of the third lead frame 13 can be reduced to a width that allows one of the widths of the second connection portion 32 or the fourth connection portion 42 to be connected, making it possible to reduce the size and cost of the semiconductor device 1.

[0072] Furthermore, since the distance between the semiconductor element and the end of the lead frame and the distance between semiconductor elements arranged on the same lead frame are not significantly shortened, there is no difference in the thermal resistance (heat dissipation to the lead frame) of the semiconductor elements for each arrangement of the semiconductor elements, and the influence of thermal interference from other semiconductor elements can be reduced, thereby suppressing an increase in the thermal resistance of the first semiconductor element 21 and the second semiconductor element 22. Since an increase in the thermal resistance of the first semiconductor element 21 and the second semiconductor element 22 is suppressed, it is possible to reduce the size and cost of the semiconductor device 1 by changing to cheaper, smaller-sized semiconductor elements and by miniaturizing the lead frame.

[0073] When viewed in the Z direction, if the Y-direction center of the first semiconductor element 21 and the Y-direction center of the second semiconductor element 22 are aligned in position in the Y direction, the distance of the first semiconductor element 21 from the end of the first lead frame 11 and the distance of the second semiconductor element 22 from the end of the second lead frame 12 can be made equal. Since the distance of the first semiconductor element 21 from the end of the first lead frame 11 and the distance of the second semiconductor element 22 from the end of the second lead frame 12 are made equal, the difference in thermal resistance of each semiconductor element for each arrangement of the semiconductor elements can be further reduced.

[0074] When the first plate-like lead 3 and the second plate-like lead 4 have the same shape, the first plate-like lead 3 and the second plate-like lead 4 are made of the same material, so there is no need to manufacture them separately, and management of each material becomes easier, thereby improving the productivity of the semiconductor device 1. Also, the cost of the semiconductor device 1 can be reduced.

[0075] When viewed in the Z direction, if the Y-direction center of the first connection portion 31 and the Y-direction center of the second connection portion 32 are aligned in the Y-direction and the first connecting portion 35 extends in the X-direction, or if the Y-direction center of the third connection portion 41 and the Y-direction center of the fourth connection portion 42 are aligned in the Y-direction and the second connecting portion 45 extends in the X-direction, one of the first plate-shaped lead 3 and the second plate-shaped lead 4 will have a straight and simple shape, thereby reducing the manufacturing cost of the semiconductor device 1.

[0076] When the semiconductor device 1 includes a plurality of first semiconductor elements 21 and a plurality of second semiconductor elements 22, and the number of the plurality of first semiconductor elements 21 is equal to the number of the plurality of second semiconductor elements 22, the first lead frame 11 and the second lead frame 12 can be made to have the same shape, and therefore the cost of the first lead frame 11 and the second lead frame 12 can be reduced. In addition, since the distance of the first semiconductor element 21 from the end of the first lead frame 11 and the distance of the second semiconductor element 22 from the end of the second lead frame 12 are equal, the difference in thermal resistance of each semiconductor element for each arrangement of the semiconductor elements can be reduced, and therefore the first semiconductor element 21 and the second semiconductor element 22 can each have the same heat dissipation effect.

[0077] When the multiple first semiconductor elements 21 and the multiple second semiconductor elements 22 are arranged in the Y direction, the width in the X direction of the first lead frame 11 and the second lead frame 12 can be reduced to the minimum width required for heat dissipation of each semiconductor element in addition to the width in the X direction of each semiconductor element, so that the first lead frame 11 and the second lead frame 12 can be made smaller. Also, the cost of the first lead frame 11 and the second lead frame 12 can be reduced.

[0078] When the center in the Y direction of the second connection portion 32 is disposed on one side in the Y direction from the center in the Y direction of the first connection portion 31 at a distance of at least 1 / 2 of the width in the Y direction of the second connection portion 32, and the center in the Y direction of the fourth connection portion 42 is disposed on the other side in the Y direction from the center in the Y direction of the third connection portion 41 at a distance of at least 1 / 2 of the width in the Y direction of the fourth connection portion 42, the Y direction positions of the centers of the first semiconductor element 21 and the second semiconductor element 22 can be aligned in the Y direction as viewed in the Z direction. Since the Y direction positions of the centers of the first semiconductor element 21 and the second semiconductor element 22 in the Y direction are aligned, the distance of the first semiconductor element 21 from the end of the first lead frame 11 and the distance of the second semiconductor element 22 from the end of the second lead frame 12 can be made equal. Since the distance of the first semiconductor element 21 from the end of the first lead frame 11 and the distance of the second semiconductor element 22 from the end of the second lead frame 12 are equivalent, the difference in thermal resistance of each semiconductor element for each arrangement of the semiconductor elements can be further reduced.

[0079] When the Z-direction positions of the first connecting portion 31 and the second connecting portion 32 and the first coupling portion 35 are different, and the Z-direction positions of the third connecting portion 41 and the fourth connecting portion 42 and the second coupling portion 45 are different, the area where the joining member 7 is attached to each joint can be easily determined. In addition, the thickness of the joining member 7 can be made equal. Since the area where the joining member 7 is attached is determined and the thickness of the joining member 7 is stable, contact between the joining member 7 and other members can be suppressed. Since contact between the joining member 7 and other members is suppressed, insulation failure can be suppressed.

[0080] When viewed in the Z direction, the outer edges of the first connecting portion 35 of the first plate-like lead 3 and the second connecting portion 45 of the second plate-like lead 4 have at least one step that changes in the Y direction, the self-supporting ability of each plate-like lead can be improved. By improving the self-supporting ability of each plate-like lead, when mounting the plate-like lead, the plate-like lead placed in a stable state in a case or the like can be easily grasped by the mounting equipment. Since it becomes easier for the mounting equipment to grasp the plate-like lead, errors that occur due to the equipment failing to grasp it during manufacturing are reduced, so the manufacturing cost of the semiconductor device 1 can be reduced and the productivity of the semiconductor device 1 can be improved.

[0081] When the area of ​​the second connection portion 32 is smaller than the area of ​​the first connection portion 31 and the area of ​​the fourth connection portion 42 is smaller than the area of ​​the third connection portion 41, the areas of the second connection portion 32 and the fourth connection portion 42 can be reduced regardless of the sizes of the first semiconductor element 21 and the second semiconductor element 22. Since the areas of the second connection portion 32 and the fourth connection portion 42 are reduced, the width in the X direction of the third lead frame 13 can be reduced. Since the width in the X direction of the third lead frame 13 is reduced, the third lead frame 13 can be made smaller and less expensive, and the semiconductor device 1 can be made smaller and less expensive.

[0082] When the first connection portion 31 is provided inside the outer periphery of the first semiconductor element 21 and the third connection portion 41 is provided inside the outer periphery of the second semiconductor element 22, the region to which the bonding member 7 is attached is inside the outer peripheries of the first semiconductor element 21 and the second semiconductor element 22, so that the bonding member 7 does not flow out beyond the outer peripheries of the first semiconductor element 21 and the second semiconductor element 22, thereby suppressing contact between the bonding member 7 and other members. Since contact between the bonding member 7 and other members is suppressed, insulation failures within the semiconductor device 1 can be suppressed.

[0083] If the Z-direction height of the face of the first connection portion 31 facing the first semiconductor element 21 is different from the Z-direction height of the face of the second connection portion 32 facing the third lead frame 13, and the Z-direction height of the face of the third connection portion 41 facing the second semiconductor element 22 is different from the Z-direction height of the face of the fourth connection portion 42 facing the third lead frame 13, the first connection portion 31 can be shifted in the Z direction by the thickness of the first semiconductor element 21 and the bonding member 7, and the third connection portion 41 can be shifted in the Z direction by the thickness of the second semiconductor element 22 and the bonding member 7.Therefore, the first semiconductor element 21 and the first connection portion 31, and the second semiconductor element 22 and the third connection portion 41 can be opposed to each other and reliably connected to each other without changing the thickness of each lead frame.

[0084] When the first connection portion 31, the second connection portion 32, and the first coupling portion 35 have the same thickness, and the third connection portion 41, the fourth connection portion 42, and the second coupling portion 45 have the same thickness, the first plate-like lead 3 and the second plate-like lead 4 can be fabricated from a single plate material of the same thickness, thereby reducing the cost of the first plate-like lead 3 and the second plate-like lead 4. Since the cost of the first plate-like lead 3 and the second plate-like lead 4 is reduced, the cost of the semiconductor device 1 can be reduced.

[0085] When the thickness of the first connection portion 31 is formed to be thinner than the thickness of the second connection portion 32 by at least the thickness of the first semiconductor element 21, and the thickness of the third connection portion 41 is formed to be thinner than the thickness of the fourth connection portion 42 by at least the thickness of the second semiconductor element 22, the thickness of the first connection portion 31 can be made thinner by the thickness of the first semiconductor element 21 and the bonding member 7, and the thickness of the third connection portion 41 can be made thinner by the thickness of the second semiconductor element 22 and the bonding member 7.Therefore, the first semiconductor element 21 and the first connection portion 31, and the second semiconductor element 22 and the third connection portion 41 can be arranged opposite each other and reliably connected to each other without changing the thickness of each lead frame.

[0086] When the first lead frame 11, the second lead frame 12, the third lead frame 13, the first semiconductor element 21, the second semiconductor element 22, the first plate-like lead 3, and the second plate-like lead 4 are sealed with an insulating resin member 6, insulation between the components inside the semiconductor device 1 is ensured, and the distance between the components inside the semiconductor device 1 is shortened, so that the semiconductor device 1 can be made smaller. In addition, insulation between the internal potential-bearing portion of the semiconductor device 1 and the components outside the semiconductor device 1 can be ensured, so that the distance between the components inside and outside the semiconductor device 1 can be reduced. Since the distance between the components is reduced, a power conversion device or the like incorporating the semiconductor device 1 can be made smaller and less expensive.

[0087] When each of the first connection portion 31, the second connection portion 32, the third connection portion 41, and the fourth connection portion 42 has a first through hole penetrating in the Z direction, the first through hole 33 and the first through hole 43 are filled with the bonding material 7, so that the adhesion strength of the first connection portion 31, the second connection portion 32, the third connection portion 41, and the fourth connection portion 42 is improved, and the force acting in a direction away from the joint of these connection portions can be suppressed. Since the force acting in a direction away from the joint portion is suppressed, it is possible to suppress electrical short circuits and disconnections that occur when these connection portions are separated. Since electrical short circuits and disconnections are suppressed, the reliability of the semiconductor device 1 can be improved.

[0088] When the semiconductor device 1 includes an insulating heat dissipation member 5 to which the first second surface 11b2 opposite to the first first surface 11b1 of the first lead frame 11, the second second surface 12b2 opposite to the second first surface 12b1 of the second lead frame 12, and the third second surface 13b2 opposite to the third first surface 13b1 of the third lead frame 13 are thermally connected, the heat of the semiconductor device 1 is dissipated to the outside via the insulating heat dissipation member 5, so that the heat dissipation of the semiconductor device 1 can be improved while ensuring the insulation of the semiconductor device 1. In addition, since the insulation of the semiconductor device 1 is ensured, the insulating heat dissipation member 5 side of the semiconductor device 1 can be thermally directly connected to a cooling member made of metal via a heat dissipation member such as grease, so that the temperature of the first semiconductor element 21 and the second semiconductor element 22 can be further reduced. Since the temperature of the first semiconductor element 21 and the second semiconductor element 22 is further reduced, the semiconductor device 1 can be further reduced in size and cost.

[0089] When the first connecting portion 35 and the second connecting portion 45 each have at least one second through hole penetrating in the Z direction, tilting of the first plate-like lead 3 and the second plate-like lead 4 during resin molding can be suppressed and the flow of the resin member 6 can be made smooth. Since tilting of the first plate-like lead 3 and the second plate-like lead 4 is suppressed and the flow of the resin is made smooth, the semiconductor device 1 can be manufactured easily and the manufacturing cost of the semiconductor device 1 can be reduced. Furthermore, since the adhesive strength between the resin member 6 and the first plate-like lead 3 and the second plate-like lead 4 is improved, the reliability of the semiconductor device 1 can be improved.

[0090] When the cross-sectional area of ​​the first coupling portion 35 cut in the Z direction including the second through hole 34 is larger than the cross-sectional areas of the end of the first connecting portion 31 on the other side in the X direction opposite the first coupling portion 35 and the end of the second connecting portion 32 on one side in the X direction opposite the first coupling portion 35, and the cross-sectional area of ​​the second coupling portion 45 cut in the Z direction including the second through hole 44 is larger than the cross-sectional areas of the end of the third connecting portion 41 on one side in the X direction opposite the second coupling portion 45 and the end of the fourth connecting portion 42 on the other side in the X direction opposite the second coupling portion 45, the provision of the second through holes 34, 44 can suppress the cross-sectional area through which current flows of the first coupling portion 35 and the second coupling portion 45 from being locally reduced. Since the cross-sectional area through which current flows of the first coupling portion 35 and the second coupling portion 45 is suppressed from being locally reduced, the increase in local loss of the first coupling portion 35 and the second coupling portion 45 can be suppressed. Since an increase in localized loss in the first connecting portion 35 and the second connecting portion 45 is suppressed, the temperature inside the semiconductor device 1 can be reduced, thereby making it possible to reduce the size and cost of the semiconductor device 1.

[0091] When the second through holes 34, 44 are provided at positions adjacent to the outer edges of the first connecting portion 35 and the second connecting portion 45, tilting of the first plate-like lead 3 and the second plate-like lead 4 during resin molding can be further suppressed and the flow of the resin member 6 can be made smoother than when the second through holes 34, 44 are provided at the center of the first connecting portion 35 and the second connecting portion 45. Since tilting of the first plate-like lead 3 and the second plate-like lead 4 is further suppressed and the flow of the resin is made smoother, the semiconductor device 1 can be manufactured more easily and the manufacturing cost of the semiconductor device 1 can be further reduced.

[0092] When the second through hole 34 has an opening size on one side in the Z direction different from that on the other side in the Z direction, an appropriate direction for widening the openings of the second through holes 34, 44 can be selected according to the stress appropriately applied to the first plate-like lead 3 and the second plate-like lead 4 due to the shapes of the components of the semiconductor device 1 and the gate and other conditions when the semiconductor device 1 is molded, thereby improving the adhesion between the resin member 6 and the first plate-like lead 3 and the second plate-like lead 4. Since the adhesion between the resin member 6 and the first plate-like lead 3 and the second plate-like lead 4 is improved, the reliability of the semiconductor device 1 can be increased.

[0093] Although the present application describes various exemplary embodiments and examples, the various features, aspects, and functions described in one or more embodiments are not limited to application to a particular embodiment, but may be applied to the embodiments alone or in various combinations. Therefore, countless modifications not exemplified are assumed within the scope of the technology disclosed in the present specification, including, for example, modifying, adding, or omitting at least one component, and further, extracting at least one component and combining it with a component of another embodiment.

[0094] Various aspects of the present disclosure are summarized below as appendices. (Appendix 1) a first lead frame having electrical conductivity; a first semiconductor element electrically and thermally connected to a first surface of the first lead frame; a third lead frame that is arranged next to the first lead frame with a gap therebetween, has a third first surface on the same side as the first first surface, and has electrical conductivity; a second lead frame that is disposed on the opposite side of the third lead frame from the first lead frame, arranged with a gap between the third lead frame and the first lead frame, has a second first surface on the same side as the first first surface, and is conductive; a second semiconductor element electrically and thermally connected to the second first surface of the second lead frame; a first plate-like lead having electrical conductivity, the first plate-like lead including a first connection portion bonded via a bonding member to a surface of the first semiconductor element opposite to the first lead frame side, a second connection portion bonded via a bonding member to the third first surface, and a first coupling portion coupling the first connection portion and the second connection portion; a third connection portion bonded via a bonding member to a surface of the second semiconductor element opposite to the second lead frame side, a fourth connection portion bonded via a bonding member to the third first surface, and a second coupling portion coupling the third connection portion and the fourth connection portion, and a second plate-like lead having electrical conductivity; a direction in which the first lead frame, the third lead frame, and the second lead frame are arranged is defined as an X direction, a direction parallel to the third first surface and perpendicular to the X direction is defined as a Y direction, and a direction perpendicular to the X direction and the Y direction is defined as a Z direction; When viewed in the Z direction, a positional range of the first semiconductor element in the Y direction and a positional range of the second semiconductor element in the Y direction at least partially overlap each other; The second connection portion and the fourth connection portion are arranged in the Y direction. (Appendix 2) When viewed in the Z direction, 2. The semiconductor device according to claim 1, wherein a center of the first semiconductor element in the Y direction and a center of the second semiconductor element in the Y direction are aligned in the Y direction. (Appendix 3) 3. The semiconductor device according to claim 1, wherein the first plate-shaped lead and the second plate-shaped lead have the same shape. (Appendix 4) When viewed in the Z direction, a center portion of the first connection portion in the Y direction and a center portion of the second connection portion in the Y direction are aligned in the Y direction, and the first connection portion extends in the X direction; or the semiconductor device according to appendix 1 or 2, wherein a center of the third connection portion in the Y direction and a center of the fourth connection portion in the Y direction are positioned in the Y direction coincident with each other, and the second connection portion extends in the X direction. (Appendix 5) A plurality of the first semiconductor elements and a plurality of the second semiconductor elements, 4. The semiconductor device according to claim 1, wherein the number of the first semiconductor elements is the same as the number of the second semiconductor elements. (Appendix 6) The semiconductor device according to claim 5, wherein the plurality of first semiconductor elements and the plurality of second semiconductor elements are arranged in the Y direction. (Appendix 7) a center portion in the Y direction of the second connection portion is disposed on one side in the Y direction from a center portion in the Y direction of the first connection portion, the center portion in the Y direction being spaced apart by ½ or more of the width of the second connection portion in the Y direction, and a center portion in the Y direction of the fourth connection portion is disposed on the other side in the Y direction from a center portion in the Y direction of the third connection portion, the center portion in the Y direction being spaced apart by ½ or more of the width of the fourth connection portion in the Y direction. Alternatively, the semiconductor device according to any one of appendices 1 to 3, 5, and 6, wherein the Y-direction center of the second connection portion is arranged on the other side of the Y direction from the Y-direction center of the first connection portion, at a distance of more than half the Y-direction width of the second connection portion, and the Y-direction center of the fourth connection portion is arranged on one side of the Y direction from the Y-direction center of the third connection portion, at a distance of more than half the Y-direction width of the fourth connection portion. (Appendix 8) 8. The semiconductor device according to claim 1, wherein the first connection portion and the second connection portion are positioned differently from the first connecting portion in the Z direction, and the third connection portion and the fourth connection portion are positioned differently from the second connecting portion in the Z direction. (Appendix 9) When viewed in the Z direction, A semiconductor device described in any one of Appendices 1 to 3 and 5 to 8, wherein the outer edges of the first connecting portion of the first plate-shaped lead and the second connecting portion of the second plate-shaped lead have at least one step that changes in the Y direction. (Appendix 10) 10. The semiconductor device according to claim 1, wherein an area of ​​the second connection portion is smaller than an area of ​​the first connection portion, and an area of ​​the fourth connection portion is smaller than an area of ​​the third connection portion. (Appendix 11) The semiconductor device according to any one of claims 1 to 10, wherein the first connection portion is provided on the inside of an outer periphery of the first semiconductor element, and the third connection portion is provided on the inside of an outer periphery of the second semiconductor element. (Appendix 12) a height in the Z direction of a surface of the first connection portion on a side of the first semiconductor element is different from a height in the Z direction of a surface of the second connection portion on a side of the third lead frame, 12. The semiconductor device according to any one of claims 1 to 11, wherein the Z-direction height of a surface of the third connection portion facing the second semiconductor element is different from the Z-direction height of a surface of the fourth connection portion facing the third lead frame. (Appendix 13) The first connection portion, the second connection portion, and the first coupling portion have the same thickness, 13. The semiconductor device according to any one of claims 1 to 12, wherein the third connection portion, the fourth connection portion, and the second linking portion have the same thickness. (Appendix 14) a thickness of the first connection portion is smaller than a thickness of the second connection portion by at least a thickness of the first semiconductor element; 13. The semiconductor device according to any one of claims 1 to 12, wherein a thickness of the third connection portion is thinner than a thickness of the fourth connection portion by at least the thickness of the second semiconductor element. (Appendix 15) The semiconductor device according to any one of claims 1 to 14, wherein the first lead frame, the second lead frame, the third lead frame, the first semiconductor element, the second semiconductor element, the first plate-shaped lead, and the second plate-shaped lead are sealed with an insulating resin member. (Appendix 16) 16. The semiconductor device according to claim 1, wherein each of the first connection portion, the second connection portion, the third connection portion, and the fourth connection portion has a first through hole penetrating in the Z direction. (Appendix 17) 17. The semiconductor device according to any one of claims 1 to 16, further comprising an insulating heat dissipation member thermally connected to a first second surface of the first lead frame opposite the first first surface, a second second surface of the second lead frame opposite the second first surface, and a third second surface of the third lead frame opposite the third first surface. (Appendix 18) 18. The semiconductor device according to claim 17, wherein each of the first connecting portion and the second connecting portion has at least one second through hole penetrating in the Z direction. (Appendix 19) a cross-sectional area of ​​the first coupling portion cut in the Z direction including the second through hole is larger than a cross-sectional area of ​​an end portion of the first connection portion on the other side in the X direction opposite to the first coupling portion and a cross-sectional area of ​​an end portion of the second connection portion on the one side in the X direction opposite to the first coupling portion, 19. The semiconductor device of claim 18, wherein a cross-sectional area of ​​the second connecting portion cut in the Z direction including the second through hole is larger than a cross-sectional area of ​​an end of the third connecting portion on one side in the X direction opposite the second connecting portion, and an end of the fourth connecting portion on the other side in the X direction opposite the second connecting portion. (Appendix 20) 20. The semiconductor device according to claim 18, wherein each of the second through holes is provided at a position adjacent to an outer edge of the first connecting portion and the second connecting portion. (Appendix 21) 21. The semiconductor device according to any one of claims 18 to 20, wherein the second through hole has an opening on one side in the Z direction that is different in size from an opening on the other side in the Z direction. [Explanation of symbols]

[0095] 1 semiconductor device, 11 first lead frame, 11a first terminal portion, 11b first mounting portion, 11b1 first first surface, 11b2 first second surface, 11c straight lead, 12 second lead frame, 12a second terminal portion, 12b second mounting portion, 12b1 second first surface, 12b2 second second surface, 12c straight lead, 13 third lead frame, 13a third terminal portion, 13b third mounting portion, 13b1 third first surface, 13b2 third second surface, 13c straight lead, 21 first semiconductor element, 22 second semiconductor element, 3 first plate-like lead, 31 first connection portion, 31a first connection portion center line, 32 second connection portion, 32a second connection portion center line, 33 first through hole, 34 second through hole, 35 First connecting portion, 36 protruding portion, 300 step portion, 4 second plate-like lead, 41 third connecting portion, 42 fourth connecting portion, 43 first through hole, 44 second through hole, 45 second connecting portion, 5 insulating heat dissipation member, 51 resin member layer, 52 heat dissipation member layer, 6 resin member, 7 joining member

Claims

1. a first lead frame having electrical conductivity; a first semiconductor element electrically and thermally connected to a first surface of the first lead frame; a third lead frame that is arranged next to the first lead frame with a gap therebetween, has a third first surface on the same side as the first first surface, and has electrical conductivity; a second lead frame that is disposed on the opposite side of the third lead frame from the first lead frame, arranged with a gap between the third lead frame and the first lead frame, has a second first surface on the same side as the first first surface, and has electrical conductivity; a second semiconductor element electrically and thermally connected to the second first surface of the second lead frame; a first plate-like lead having electrical conductivity, the first plate-like lead including a first connection portion bonded via a bonding member to a surface of the first semiconductor element opposite to the first lead frame side, a second connection portion bonded via a bonding member to the third first surface, and a first coupling portion coupling the first connection portion and the second connection portion; a third connection portion bonded via a bonding member to a surface of the second semiconductor element opposite to the second lead frame side, a fourth connection portion bonded via a bonding member to the third first surface, and a second coupling portion coupling the third connection portion and the fourth connection portion, and a second plate-like lead having electrical conductivity; a direction in which the first lead frame, the third lead frame, and the second lead frame are arranged is defined as an X direction, a direction parallel to the third first surface and perpendicular to the X direction is defined as a Y direction, and a direction perpendicular to the X direction and the Y direction is defined as a Z direction, When viewed in the Z direction, a positional range of the first semiconductor element in the Y direction and a positional range of the second semiconductor element in the Y direction at least partially overlap each other; The second connection portion and the fourth connection portion are aligned in the Y direction.

2. When viewed in the Z direction, 2 . The semiconductor device according to claim 1 , wherein a center portion of the first semiconductor element in the Y direction and a center portion of the second semiconductor element in the Y direction are aligned in the Y direction.

3. 2. The semiconductor device according to claim 1, wherein the first plate-like lead and the second plate-like lead have the same shape.

4. When viewed in the Z direction, a center portion of the first connection portion in the Y direction and a center portion of the second connection portion in the Y direction are aligned in the Y direction, and the first connection portion extends in the X direction; 2. The semiconductor device according to claim 1, wherein the Y-direction center of the third connection portion and the Y-direction center of the fourth connection portion are aligned in the Y-direction, and the second connection portion extends in the X-direction.

5. A plurality of the first semiconductor elements and a plurality of the second semiconductor elements, 2. The semiconductor device according to claim 1, wherein the number of the first semiconductor elements is the same as the number of the second semiconductor elements.

6. The semiconductor device according to claim 5 , wherein the plurality of first semiconductor elements and the plurality of second semiconductor elements are aligned in the Y direction.

7. a center portion in the Y direction of the second connection portion is disposed on one side in the Y direction from a center portion in the Y direction of the first connection portion by at least half the width of the second connection portion in the Y direction, and a center portion in the Y direction of the fourth connection portion is disposed on the other side in the Y direction from a center portion in the Y direction of the third connection portion by at least half the width of the fourth connection portion in the Y direction. or the semiconductor device according to claim 1, wherein the Y-direction center of the second connection portion is positioned on the other side of the Y-direction from the Y-direction center of the first connection portion, at a distance of more than 1 / 2 of the Y-direction width of the second connection portion, and the Y-direction center of the fourth connection portion is positioned on one side of the Y-direction from the Y-direction center of the third connection portion, at a distance of more than 1 / 2 of the Y-direction width of the fourth connection portion.

8. 2. The semiconductor device according to claim 1, wherein the first connection portion and the second connection portion are positioned differently from the first connecting portion in the Z direction, and the third connection portion and the fourth connection portion are positioned differently from the second connecting portion in the Z direction.

9. When viewed in the Z direction, 2 . The semiconductor device according to claim 1 , wherein outer edges of the first connecting portion of the first plate-like lead and the second connecting portion of the second plate-like lead have at least one step that changes in the Y direction.

10. 2 . The semiconductor device according to claim 1 , wherein an area of ​​the second connection portion is smaller than an area of ​​the first connection portion, and an area of ​​the fourth connection portion is smaller than an area of ​​the third connection portion.

11. The semiconductor device according to claim 1 , wherein the first connection portion is provided inside an outer periphery of the first semiconductor element, and the third connection portion is provided inside an outer periphery of the second semiconductor element.

12. a height in the Z direction of a surface of the first connection portion on a side of the first semiconductor element is different from a height in the Z direction of a surface of the second connection portion on a side of the third lead frame, 2. The semiconductor device according to claim 1, wherein the Z-direction height of the surface of the third connection portion facing the second semiconductor element is different from the Z-direction height of the surface of the fourth connection portion facing the third lead frame.

13. The first connection portion, the second connection portion, and the first coupling portion have the same thickness, The semiconductor device according to claim 1 , wherein the third connection portion, the fourth connection portion, and the second linking portion have the same thickness.

14. a thickness of the first connection portion is smaller than a thickness of the second connection portion by at least a thickness of the first semiconductor element; 2 . The semiconductor device according to claim 1 , wherein the third connection portion is thinner than the fourth connection portion by at least the thickness of the second semiconductor element.

15. 2. The semiconductor device according to claim 1, wherein the first lead frame, the second lead frame, the third lead frame, the first semiconductor element, the second semiconductor element, the first plate-shaped lead, and the second plate-shaped lead are sealed with an insulating resin member.

16. The semiconductor device according to claim 1 , wherein each of the first connection portion, the second connection portion, the third connection portion, and the fourth connection portion has a first through hole penetrating therethrough in the Z direction.

17. 16. The semiconductor device of claim 1 or 15, further comprising an insulating heat dissipation member thermally connected to a first second surface of the first lead frame opposite the first first surface, a second second surface of the second lead frame opposite the second first surface, and a third second surface of the third lead frame opposite the third first surface.

18. The semiconductor device according to claim 17 , wherein each of the first connecting portion and the second connecting portion has at least one second through hole penetrating in the Z direction.

19. a cross-sectional area of ​​the first coupling portion cut in the Z direction including the second through hole is larger than a cross-sectional area of ​​an end portion of the first connection portion on the other side in the X direction opposite to the first coupling portion and a cross-sectional area of ​​an end portion of the second connection portion on the one side in the X direction opposite to the first coupling portion, 19. The semiconductor device according to claim 18, wherein a cross-sectional area of ​​the second connecting portion cut in the Z direction, including a portion of the second through hole, is larger than a cross-sectional area of ​​an end portion of the third connecting portion on one side in the X direction opposite the second connecting portion, and an end portion of the fourth connecting portion on the other side in the X direction opposite the second connecting portion.

20. The semiconductor device according to claim 18 , wherein each of the second through holes is provided at a position adjacent to an outer edge of the first connecting portion and the second connecting portion.

21. The semiconductor device according to claim 18 , wherein the second through hole has an opening on one side in the Z direction that is different in size from an opening on the other side in the Z direction.

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