Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing apparatus that can reduce a range in which oxidation gas oxidizing and evaporating organic matter diffuses, and can supply the oxidation gas to remove the organic matter from a substrate.SOLUTION: A substrate processing apparatus comprises a light source cover 92, an inner nozzle 93, and an exhaust guide 94. The light source cover 92 includes a lower surface 92sL that faces a substrate W, and a center opening 92op that is formed by an inner periphery of the lower surface 92sL. The inner nozzle 93 forms the flow of oxidation gas flowing radially from the center opening 92op between the lower surface 92sL and the substrate W. A light source 91 irradiates the substrate W with light through the lower surface 92sL. The exhaust guide 94 includes an endless suction port 95i that surrounds a center axis CL on the outside of the center opening 92op, and sucks in the gas flowing radially from the center opening 92op along the substrate W from the endless suction port 95i.SELECTED DRAWING: Figure 11

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for processing substrates, including, for example, semiconductor wafers, substrates for FPDs (Flat Panel Displays) such as liquid crystal displays and organic EL (electroluminescence) displays, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells. [Background technology]

[0002] Patent Document 1 discloses that when the solidified body is sublimated and removed from the pattern-formed surface of the substrate, organic matter precipitated on the solidified body is removed by contacting the solidified body with ozone gas. Paragraph 0149 of Patent Document 1 describes an ozone gas exhaust means, an ozone gas exhaust pump, an exhaust pipe, a valve, and a suction nozzle. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP2018-110199A Summary of the Invention [Problem to be solved by the invention]

[0004] Although paragraph 0149 of Patent Document 1 describes exhausting the ozone gas supplied to the solidified body, Patent Document 1 does not disclose a specific structure or method for exhausting the ozone gas.

[0005] One object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of narrowing the range of diffusion of an oxidizing gas that oxidizes and vaporizes organic matter, and capable of removing organic matter from a substrate by supplying the oxidizing gas. [Means for solving the problem]

[0006] One embodiment of the present invention provides a substrate processing apparatus comprising: a substrate holder for holding a substrate; a light source cover including an opposing surface facing the substrate held by the substrate holder and a central opening formed by the inner periphery of the opposing surface surrounding a central axis passing through the center of the substrate; an inner nozzle for discharging an oxidizing gas that oxidizes and vaporizes organic matter toward the substrate held by the substrate holder, thereby forming a flow of the oxidizing gas flowing radially from the central opening between the opposing surface and the substrate; a light source for heating the substrate and the oxidizing gas by irradiating the substrate held by the substrate holder with light via the opposing surface; and an exhaust guide including an endless suction port surrounding the central axis outside the central opening, or a plurality of divided suction ports arranged in a ring shape so as to surround the central axis outside the central opening, and for sucking in gas flowing radially from the central opening along the substrate through the endless suction port or the plurality of divided suction ports.

[0007] In the above embodiment, at least one of the following features may be added to the substrate processing apparatus.

[0008] The light source cover further includes an outer peripheral wall surrounding the light source, and the exhaust guide surrounds the entire periphery of the outer peripheral wall without contacting the outer peripheral wall.

[0009] The light source cover further includes a top wall protruding inward from the outer peripheral wall, and the exhaust guide includes an exhaust ring surrounding the entire circumference of the outer peripheral wall without contacting the outer peripheral wall, and a flange protruding outward from the exhaust ring, and the substrate processing apparatus further includes a support arm supporting the top wall and the flange, and at least a portion of the flange is positioned below the upper end of the top wall and above the lower end of the top wall.

[0010] The exhaust guide further includes an exhaust port opening on a surface of the exhaust guide, and an internal flow path that guides gas from the endless suction port or the multiple divided suction ports to the exhaust port, wherein the internal flow path includes a first cylindrical flow path that surrounds the central axis on a cylindrical surface surrounding the central axis, a second cylindrical flow path that surrounds the central axis on the cylindrical surface, a plurality of first linear flow paths extending from the first cylindrical flow path to the second cylindrical flow path, and a plurality of second linear flow paths that extend from the second cylindrical flow path toward the endless suction port or the multiple divided suction ports on an opposite side to the multiple first linear flow paths, and the multiple first linear flow paths and the multiple second linear flow paths are arranged on the cylindrical surface such that at least one of the multiple first linear flow paths does not overlap any of the multiple second linear flow paths when viewed in a direction parallel to the central axis.

[0011] The substrate processing apparatus further includes a gas heater that heats the oxidizing gas before it is supplied to the inner nozzle.

[0012] The substrate processing apparatus further includes an oxidizing gas pipe that guides the oxidizing gas to be discharged from the inner nozzle, an inert gas pipe that guides the inert gas to be discharged from the inner nozzle, an oxidizing gas valve that switches between an open state that passes the oxidizing gas flowing through the oxidizing gas pipe toward the inner nozzle and a closed state that stops the oxidizing gas flowing through the oxidizing gas pipe toward the inner nozzle, and an inert gas valve that switches between an open state that passes the inert gas flowing through the inert gas pipe toward the inner nozzle and a closed state that stops the inert gas flowing through the inert gas pipe toward the inner nozzle.

[0013] The substrate processing apparatus further includes a control device that switches the oxidizing gas valve from the open state to the closed state while causing the exhaust guide to suck in gas, and then switches the inert gas valve from the closed state to the open state while causing the exhaust guide to suck in gas.

[0014] The substrate processing apparatus further includes a sublimable substance-containing liquid nozzle that ejects a sublimable substance-containing liquid containing a sublimable substance toward the substrate held by the substrate holder, a gas nozzle that ejects gas toward the substrate held by the substrate holder, and a spin motor that rotates the substrate held by the substrate holder by rotating the substrate holder around a rotation axis passing through a center of the substrate held by the substrate holder.

[0015] The substrate processing apparatus further includes a control device that starts ejection of the oxidizing gas from the inner nozzle after a solidified film containing the sublimable substance contained in the sublimable substance-containing liquid is removed from the substrate.

[0016] Another embodiment of the present invention provides a substrate processing method including: an oxidizing gas supply step of discharging an oxidizing gas, which oxidizes and vaporizes organic matter, from an inner nozzle toward a substrate held by a substrate holder, thereby forming a flow of the oxidizing gas flowing radially from a central opening formed by the inner periphery of an opposing surface surrounding a central axis passing through the center of the substrate, between the opposing surface and the substrate; a light emission step of heating the substrate and the oxidizing gas by irradiating the substrate held by the substrate holder with light from a light source via the opposing surface while discharging the oxidizing gas from the inner nozzle; and an exhaust step of sucking the oxidizing gas flowing radially from the central opening along the substrate into an endless suction port surrounding the central axis outside the central opening, or into a plurality of divided suction ports arranged in a ring shape so as to surround the central axis outside the central opening, while discharging the oxidizing gas from the inner nozzle, thereby guiding the oxidizing gas to an exhaust guide provided with the endless suction port or a plurality of divided suction ports. [Brief description of the drawings]

[0017] [Figure 1A] 1 is a schematic plan view showing a layout of a substrate processing apparatus according to an embodiment of the present invention; [Figure 1B] 1 is a schematic side view of a substrate processing apparatus; [Diagram 2] 1 is a schematic diagram showing the inside of a processing unit provided in a substrate processing apparatus as viewed horizontally. [Diagram 3] FIG. 2 is a schematic diagram showing the inside of the processing unit as viewed from above. [Figure 4] 4 is a cross-sectional view of the heater, the inner nozzle, and the exhaust guide taken along a plane including the central axis of the light source cover. FIG. [Diagram 5] FIG. 4 is a schematic diagram showing the heater, the inner nozzle, and the exhaust guide as viewed from below. [Figure 6] FIG. 5 is an enlarged view of a portion of FIG. [Figure 7A-B] FIG. 4 is a cross-sectional view of the exhaust guide. [Figure 8] 2 is a block diagram showing an electrical configuration of the substrate processing apparatus; FIG. [Figure 9] 5A to 5C are process diagrams illustrating an example of substrate processing performed by the substrate processing apparatus. [Figure 10A-E] FIG. 2 is a schematic cross-sectional view of a substrate. [Figure 11] 10 is a schematic diagram showing a state in which oxidizing gas is being sucked into an exhaust guide while being discharged from an inner nozzle. FIG. [Figure 12] 10 is a schematic diagram showing a state in which, after an oxidizing gas is supplied to a substrate, an inert gas is discharged from an inner nozzle while the inert gas is sucked into an exhaust guide. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0019] In the following description, unless otherwise specified, the air pressure inside the substrate processing apparatus 1 is maintained at the same pressure as the air pressure inside the clean room in which the substrate processing apparatus 1 is installed (for example, 1 atmosphere or a value close to that).

[0020] Fig. 1A is a schematic plan view showing a layout of a substrate processing apparatus 1 according to one embodiment of the present invention, and Fig. 1B is a schematic side view of the substrate processing apparatus 1.

[0021] The substrate processing apparatus 1 is a single-wafer type apparatus that processes disk-shaped substrates W such as semiconductor wafers one by one. The substrate processing apparatus 1 includes a load port LP that holds a carrier CA that accommodates a substrate W, a plurality of processing units 2 that process the substrate W transferred from the carrier CA on the load port LP with a processing fluid such as a processing liquid or a processing gas, a transfer system TS that transfers the substrate W between the carrier CA on the load port LP and the plurality of processing units 2, and a controller 3 that controls the substrate processing apparatus 1.

[0022] The multiple processing units 2 form multiple towers TW. Fig. 1A shows an example in which four towers TW are formed. As shown in Fig. 1B, the multiple processing units 2 included in one tower TW are stacked vertically. As shown in Fig. 1A, the multiple towers TW form two rows extending in the depth direction of the substrate processing apparatus 1 in a plan view. In a plan view, the two rows face each other via a transport path TP.

[0023] The transport system TS includes an indexer robot IR that transports substrates W between a carrier CA on a load port LP and the multiple processing units 2, and a center robot CR that transports substrates W between the indexer robot IR and the multiple processing units 2. The indexer robot IR is disposed between the load port LP and the center robot CR in a plan view. The center robot CR is disposed on the transport path TP.

[0024] The indexer robot IR includes one or more hands Hi that horizontally support a substrate W. The hands Hi can move parallel to both the horizontal and vertical directions. The hands Hi can rotate about a vertical line. The hands Hi can load and unload the substrate W to and from the carriers CA on any of the load ports LP, and can transfer the substrate W to and from the center robot CR.

[0025] The center robot CR includes one or more hands Hc that horizontally support the substrate W. The hands Hc can move parallel to both the horizontal and vertical directions. The hands Hc can rotate about a vertical line. The hands Hc can transfer the substrate W to and from the indexer robot IR, and can transport the substrate W into and out of any of the processing units 2.

[0026] Next, the processing unit 2 will be described.

[0027] Fig. 2 is a schematic horizontal view of the inside of a processing unit 2 provided in the substrate processing apparatus 1. Fig. 3 is a schematic top view of the inside of the processing unit 2.

[0028] As shown in FIG. 3, the processing unit 2 includes a box-shaped chamber 4 having an internal space, a spin chuck 10 that holds a single substrate W horizontally within the chamber 4 and rotates the substrate W about a vertical rotation axis A1 passing through the center of the substrate W, and a cylindrical processing cup 21 that surrounds the spin chuck 10 about the rotation axis A1.

[0029] The chamber 4 includes a box-shaped partition 5 having an inlet / outlet 5b through which the substrate W passes, and a shutter 7 for opening and closing the inlet / outlet 5b. The FFU 6 (fan filter unit) is disposed above the air outlet 5a disposed on the upper portion of the partition 5. The FFU 6 constantly supplies clean air (air filtered by a filter) into the chamber 4 from the air outlet 5a. The gas in the chamber 4 is exhausted from the chamber 4 through an exhaust duct 8 connected to the bottom of the processing cup 21. This constantly creates a downflow of clean air in the chamber 4. The flow rate of the exhaust air discharged into the exhaust duct 8 is changed according to the opening degree of an exhaust valve 9 disposed in the exhaust duct 8.

[0030] The spin chuck 10 includes a disk-shaped spin base 12 held in a horizontal position, a number of chuck pins 11 that hold the substrate W horizontally above the spin base 12, a spin shaft 13 that extends downward from the center of the spin base 12, and a spin motor 14 that rotates the spin base 12 and the number of chuck pins 11 by rotating the spin shaft 13.

[0031] The spin chuck 10 is not limited to a clamping type chuck in which multiple chuck pins 11 contact the edge surface of the substrate W, but may be a vacuum type chuck that holds the substrate W horizontally by adsorbing the back surface (lower surface) of the substrate W, which is a surface on which no devices are formed, to an upper surface 12u of the spin base 12. When the spin chuck 10 is a clamping type chuck, the multiple chuck pins 11 correspond to a substrate holder. When the spin chuck 10 is a vacuum type chuck, the spin base 12 corresponds to a substrate holder.

[0032] Processing cup 21 includes a plurality of guards 24 that receive processing liquid discharged outward from substrate W, a plurality of cups 23 that receive processing liquid guided downward by the plurality of guards 24, and a cylindrical outer wall member 22 that surrounds the plurality of guards 24 and the plurality of cups 23. Fig. 2 shows an example in which four guards 24 and three cups 23 are provided, and the outermost cup 23 is integrated with the third guard 24 from the top.

[0033] The guard 24 includes a cylindrical portion 25 surrounding the spin chuck 10, and an annular ceiling portion 26 extending obliquely upward from the upper end of the cylindrical portion 25 toward the rotation axis A1. The multiple ceiling portions 26 are stacked one on top of the other, and the multiple cylindrical portions 25 are arranged concentrically. The annular upper end of the ceiling portion 26 corresponds to an upper end 24u of the guard 24 surrounding the substrate W and the spin base 12 in a plan view. The multiple cups 23 are respectively arranged below the multiple cylindrical portions 25. The cups 23 form annular grooves that receive the processing liquid guided downward by the guard 24.

[0034] The processing unit 2 includes a guard lifting unit 27 that raises and lowers the multiple guards 24 individually. The guard lifting unit 27 positions the guards 24 at any position within a range from the upper position to the lower position. FIG. 2 shows a state in which two guards 24 are disposed at the upper position and the remaining two guards 24 are disposed at the lower position. The upper position is a position where the upper end 24u of the guard 24 is disposed above the holding position where the substrate W held by the spin chuck 10 is disposed. The lower position is a position where the upper end 24u of the guard 24 is disposed below the holding position.

[0035] Processing unit 2 includes a plurality of nozzles that discharge a processing liquid toward substrate W held by spin chuck 10. The plurality of nozzles includes a first chemical liquid nozzle 31a and a second chemical liquid nozzle 31b that discharge a chemical liquid toward the upper surface of substrate W, and a first rinsing liquid nozzle 35a and a second rinsing liquid nozzle 35b that discharge a rinsing liquid toward the upper surface of substrate W. A center nozzle 55, an inner nozzle 93, and a lower surface nozzle 71, which will be described later, are also included in the plurality of nozzles.

[0036] First chemical liquid nozzle 31a may be a scan nozzle that moves the collision position of the chemical liquid with substrate W within the upper surface of substrate W, or may be a fixed nozzle that cannot move the collision position of the chemical liquid with substrate W. The same applies to the other nozzles. Fig. 2 shows an example in which first chemical liquid nozzle 31a, second chemical liquid nozzle 31b, first rinsing liquid nozzle 35a, and second rinsing liquid nozzle 35b are scan nozzles and the other nozzles are fixed nozzles.

[0037] First chemical liquid nozzle 31a is connected to first chemical liquid pipe 32a that guides the chemical liquid to first chemical liquid nozzle 31a. Second chemical liquid nozzle 31b is connected to second chemical liquid pipe 32b that guides the chemical liquid to second chemical liquid nozzle 31b. When first chemical liquid valve 33a attached to first chemical liquid pipe 32a is opened, the chemical liquid is continuously discharged downward from the outlet of first chemical liquid nozzle 31a. Similarly, when second chemical liquid valve 33b attached to second chemical liquid pipe 32b is opened, the chemical liquid is continuously discharged downward from the outlet of second chemical liquid nozzle 31b.

[0038] FIG. 2 shows an example in which the first chemical liquid nozzle 31a discharges DHF and the second chemical liquid nozzle 31b discharges SC1. DHF (dilute hydrogen fluoride) represents dilute hydrofluoric acid. SC1 represents a liquid containing ammonium hydroxide, hydrogen peroxide, and water. The chemical liquid discharged from the first chemical liquid nozzle 31a may be a liquid containing at least one of sulfuric acid, nitric acid, hydrochloric acid, hydrofluoric acid, phosphoric acid, acetic acid, ammonia water, hydrogen peroxide water, organic acid (e.g., citric acid, oxalic acid, etc.), organic alkali (e.g., TMAH: tetramethylammonium hydroxide, etc.), surfactant, and corrosion inhibitor, or may be other liquid. The same applies to the chemical liquid discharged from the second chemical liquid nozzle 31b. The chemical liquid discharged from the second chemical liquid nozzle 31b is a liquid that is different from the chemical liquid discharged from the first chemical liquid nozzle 31a in at least one of the composition and temperature.

[0039] Although not shown, the first chemical liquid valve 33a includes a valve body provided with an annular valve seat through which the chemical liquid passes, a valve element movable relative to the valve seat, and an actuator that moves the valve element between a closed position in which the valve element contacts the valve seat and an open position in which the valve element is separated from the valve seat. The same applies to the other valves. The actuator may be a pneumatic actuator or an electric actuator, or may be an actuator other than these. The control device 3 opens and closes the first chemical liquid valve 33a, etc. by controlling the actuator.

[0040] The first rinse liquid nozzle 35a is connected to a first rinse liquid pipe 36a that guides the rinse liquid to the first rinse liquid nozzle 35a. The second rinse liquid nozzle 35b is connected to a second rinse liquid pipe 36b that guides the rinse liquid to the second rinse liquid nozzle 35b. When a first rinse liquid valve 37a attached to the first rinse liquid pipe 36a is opened, the rinse liquid is continuously discharged downward from the outlet of the first rinse liquid nozzle 35a. Similarly, when a second rinse liquid valve 37b attached to the second rinse liquid pipe 36b is opened, the rinse liquid is continuously discharged downward from the outlet of the second rinse liquid nozzle 35b.

[0041] FIG. 2 shows an example in which the first rinse liquid nozzle 35a and the second rinse liquid nozzle 35b discharge DIW. DIW (Deionized Water) stands for pure water (deionized water). The rinse liquid discharged from the first rinse liquid nozzle 35a may be any one of carbonated water, electrolytic ionized water, hydrogen water, ozone water, and hydrochloric acid water with a diluted concentration (for example, about 10 to 100 ppm), or may be a liquid other than these. The same applies to the rinse liquid discharged from the second rinse liquid nozzle 35b. The composition and temperature of the rinse liquid discharged from the second rinse liquid nozzle 35b may be the same as or different from the rinse liquid discharged from the first rinse liquid nozzle 35a.

[0042] 3, first chemical liquid nozzle 31a and first rinsing liquid nozzle 35a are connected to a first nozzle movement unit 34a that moves first chemical liquid nozzle 31a and first rinsing liquid nozzle 35a in at least one of the vertical and horizontal directions. First nozzle movement unit 34a moves first chemical liquid nozzle 31a and first rinsing liquid nozzle 35a horizontally between a processing position where the processing liquid discharged from first chemical liquid nozzle 31a or first rinsing liquid nozzle 35a is supplied to the upper surface of substrate W and a standby position where first chemical liquid nozzle 31a and first rinsing liquid nozzle 35a are positioned around processing cup 21 in a plan view.

[0043] Similarly, second chemical liquid nozzle 31b and second rinsing liquid nozzle 35b are connected to second nozzle movement unit 34b which moves second chemical liquid nozzle 31b and second rinsing liquid nozzle 35b in at least one of the vertical and horizontal directions. Second nozzle movement unit 34b moves second chemical liquid nozzle 31b and second rinsing liquid nozzle 35b horizontally between a processing position where the processing liquid discharged from second chemical liquid nozzle 31b or second rinsing liquid nozzle 35b is supplied to the upper surface of substrate W and a standby position where second chemical liquid nozzle 31b and second rinsing liquid nozzle 35b are positioned around processing cup 21 in a plan view.

[0044] 2, the multiple nozzles include a lower surface nozzle 71 that ejects a processing liquid toward a central portion of the lower surface of the substrate W. The lower surface nozzle 71 includes a disk portion disposed between the upper surface 12u of the spin base 12 and the lower surface of the substrate W, and a cylindrical portion extending downward from the disk portion. The ejection port of the lower surface nozzle 71 opens at the central portion of the upper surface of the disk portion. When the substrate W is held by the spin chuck 10, the ejection port of the lower surface nozzle 71 faces the central portion of the lower surface of the substrate W in the vertical direction.

[0045] The lower surface nozzle 71 is connected to a heating fluid pipe 72 that guides hot water (pure water that is hotter than room temperature), which is an example of a heating fluid, to the lower surface nozzle 71. The pure water is heated by a heater 75 and then supplied to the lower surface nozzle 71. When a heating fluid valve 73 attached to the heating fluid pipe 72 is opened, the hot water is continuously discharged upward from the discharge port of the lower surface nozzle 71 at a flow rate that corresponds to the opening of a flow rate adjustment valve 74 that changes the flow rate of the hot water. In this way, the hot water is supplied to the lower surface of the substrate W.

[0046] The outer peripheral surface of the lower nozzle 71 and the inner peripheral surface of the spin base 12 form a cylindrical gas flow path 82 extending vertically. The gas flow path 82 includes a central opening 81 that opens at the center of the upper surface 12u of the spin base 12. The gas flow path 82 is connected to a gas pipe 83 that guides the inert gas to the central opening 81 of the spin base 12. The substrate processing apparatus 1 may include a heater 86 that heats the inert gas discharged from the central opening 81 of the spin base 12. When a gas valve 84 attached to the gas pipe 83 is opened, the inert gas is continuously discharged upward from the central opening 81 of the spin base 12 at a flow rate corresponding to the opening degree of a flow rate adjustment valve 85 that changes the flow rate of the inert gas.

[0047] The inert gas discharged from the central opening 81 of the spin base 12 is nitrogen gas. The inert gas may be a gas other than nitrogen gas, such as helium gas or argon gas. When the substrate W is held by the spin chuck 10, the nitrogen gas is discharged from the central opening 81 of the spin base 12, and the nitrogen gas flows radially in all directions between the lower surface of the substrate W and the upper surface 12u of the spin base 12. This fills the space between the substrate W and the spin base 12 with nitrogen gas.

[0048] The processing unit 2 includes a blocking member 51 disposed above the spin chuck 10. FIG. 2 shows an example in which the blocking member 51 is a disk-shaped blocking plate. The blocking member 51 includes a disk portion 52 disposed horizontally above the spin chuck 10. The blocking member 51 is supported horizontally by a cylindrical support shaft 53 extending upward from the center of the disk portion 52. The central axis of the disk portion 52 is disposed on the rotation axis A1 of the substrate W. The lower surface of the disk portion 52 corresponds to the lower surface 51L of the blocking member 51. The lower surface 51L of the blocking member 51 is parallel to the upper surface of the substrate W and has an outer diameter equal to or greater than the diameter of the substrate W.

[0049] The blocking member 51 is connected to a blocking member lifting unit 54 that vertically raises and lowers the blocking member 51. The blocking member lifting unit 54 positions the blocking member 51 at any position within a range from an upper position (the position shown in FIG. 2) to a lower position. The lower position is a close position where a lower surface 51L of the blocking member 51 approaches an upper surface of the substrate W to a height where a scan nozzle such as the first chemical liquid nozzle 31a cannot enter between the substrate W and the blocking member 51. The upper position is a standby position where the blocking member 51 has retreated to a height where a scan nozzle can enter between the blocking member 51 and the substrate W.

[0050] The multiple nozzles include a central nozzle 55 that discharges a processing fluid such as a processing liquid or a processing gas downward through a central opening 61 that opens in the center of the lower surface 51L of the blocking member 51. The central nozzle 55 extends vertically along the rotation axis A1. The central nozzle 55 is disposed in a through hole that passes vertically through the center of the blocking member 51. The inner peripheral surface of the blocking member 51 surrounds the outer peripheral surface of the central nozzle 55 with a gap therebetween. The central nozzle 55 rises and falls together with the blocking member 51. The discharge port of the central nozzle 55 that discharges the processing fluid is disposed above the central opening 61 of the blocking member 51.

[0051] The central nozzle 55 is connected to a sublimable substance-containing liquid pipe 40 that guides the sublimable substance-containing liquid to the central nozzle 55, and a replacement liquid pipe 44 that guides the replacement liquid to the central nozzle 55. When the sublimable substance-containing liquid valve 41 attached to the sublimable substance-containing liquid pipe 40 is opened, the sublimable substance-containing liquid is continuously discharged downward from the outlet of the central nozzle 55. Similarly, when the replacement liquid valve 45 attached to the replacement liquid pipe 44 is opened, the replacement liquid is continuously discharged downward from the outlet of the central nozzle 55. FIG. 2 shows an example in which the replacement liquid is IPA (isopropyl alcohol). The central nozzle 55 is an example of a sublimable substance-containing liquid nozzle. The central nozzle 55 is also an example of a replacement liquid nozzle.

[0052] The sublimable substance-containing liquid is a solution containing a sublimable substance corresponding to a solute and a solvent that dissolves in the sublimable substance. The sublimable substance-containing liquid may further contain a substance other than the sublimable substance and the solvent. The sublimable substance may be a substance that changes from a solid to a gas without passing through a liquid state at normal temperature (synonymous with room temperature) or normal pressure (pressure inside the substrate processing apparatus 1, for example, at or near 1 atm).

[0053] The freezing point of the sublimable substance-containing liquid (freezing point at 1 atmosphere; the same applies below) is lower than room temperature (e.g., 20 to 30°C). The substrate processing apparatus 1 is arranged in a clean room maintained at room temperature. Therefore, the sublimable substance-containing liquid can be maintained in a liquid state without heating the sublimable substance-containing liquid. The freezing point of the sublimable substance is higher than the freezing point of the sublimable substance-containing liquid. The freezing point of the sublimable substance is higher than room temperature. At room temperature, the sublimable substance is solid. The freezing point of the sublimable substance may be higher than the boiling point of the solvent. The vapor pressure of the solvent is higher than the vapor pressure of the sublimable substance.

[0054] The sublimable substance may be, for example, any of alcohols such as 2-methyl-2-propanol (also known as tert-butyl alcohol, t-butyl alcohol, or tertiary butyl alcohol) or cyclohexanol, fluorohydrocarbon compounds, 1,3,5-trioxane (also known as metaformaldehyde), camphor (also known as camphor), naphthalene, and iodine, or may be a substance other than these. The sublimable substance may be cyclohexanone oxime, pinacolin oxime, or acetophenone oxime.

[0055] The solvent may be at least one selected from the group consisting of pure water, IPA, methanol, HFE (hydrofluoroether), acetone, PGMEA (propylene glycol monomethyl ether acetate), PGEE (propylene glycol monoethyl ether, 1-ethoxy-2-propanol), and ethylene glycol. IPA has a higher vapor pressure than water and a lower surface tension than water.

[0056] As described later, the substitute liquid is supplied to the upper surface of the substrate W covered with a liquid film of the rinsing liquid, and the sublimable substance-containing liquid is supplied to the upper surface of the substrate W covered with a liquid film of the substitute liquid. The substitute liquid may be any liquid as long as it is soluble in both the rinsing liquid and the sublimable substance-containing liquid. The substitute liquid is, for example, IPA (liquid). The substitute liquid may be a mixture of IPA and HFE, or may be other than these.

[0057] The central nozzle 55 is connected to a gas pipe 56 that guides an inert gas to the central nozzle 55. The substrate processing apparatus 1 may include a heater 59 that heats the inert gas discharged from the central nozzle 55. When a gas valve 57 attached to the gas pipe 56 is opened, the inert gas is continuously discharged downward from the discharge port of the central nozzle 55 at a flow rate corresponding to the opening of a flow rate adjustment valve 58 that changes the flow rate of the inert gas. The inert gas discharged from the central nozzle 55 is nitrogen gas. The inert gas may be a gas other than nitrogen gas, such as helium gas or argon gas.

[0058] The inner peripheral surface of the blocking member 51 and the outer peripheral surface of the central nozzle 55 form a cylindrical gas flow passage 62 extending vertically. The gas flow passage 62 is connected to a gas pipe 63 that guides the inert gas to the central opening 61 of the blocking member 51. The substrate processing apparatus 1 may include a heater 66 that heats the inert gas discharged from the central opening 61 of the blocking member 51. When a gas valve 64 attached to the gas pipe 63 is opened, the inert gas is continuously discharged downward from the central opening 61 of the blocking member 51 at a flow rate corresponding to the opening degree of a flow rate adjustment valve 65 that changes the flow rate of the inert gas. The inert gas discharged from the central opening 61 of the blocking member 51 is nitrogen gas. The inert gas may be a gas other than nitrogen gas, such as helium gas or argon gas.

[0059] 2, the processing unit 2 includes a heater 90 for heating the substrate W held on the spin chuck 10, an inner nozzle 93 for supplying gas between the substrate W held on the spin chuck 10 and the heater 90, and an exhaust guide 94 for sucking in the gas supplied by the inner nozzle 93 between the substrate W and the heater 90. The processing unit 2 further includes a heater moving unit 96 for moving the heater 90, the inner nozzle 93, and the exhaust guide 94 (hereinafter also referred to as "heater 90, etc.") relative to the substrate W held on the spin chuck 10.

[0060] As shown in FIG. 3, the heater movement unit 96 includes a drive actuator 96ac that generates power to move the heater 90 and the like, and a support arm 96ar that transmits the power of the drive actuator 96ac to the heater 90 and the like. The support arm 96ar is an example of a transmission element that transmits the power of the drive actuator 96ac to the heater 90 and the like. The heater 90 and the like are attached to the support arm 96ar. The support arm 96ar includes a head 96h that overlaps with the heater 90 in a plan view, and a shaft 96s that extends horizontally from the head 96h. The power of the drive actuator 96ac is transmitted to the shaft 96s, the head 96h, and the heater 90 in this order.

[0061] The drive actuator 96ac moves the heater 90 etc. between the processing position and the standby position. The position of the heater 90 etc. depicted by a two-dot chain line in FIG. 3 is the processing position. The position of the heater 90 etc. depicted by a solid line in FIG. 3 is the standby position. The processing position is a position where the heater 90 is disposed above the substrate W held by the spin chuck 10 so that the heater 90 overlaps the substrate W in a plan view. The standby position is a position where the heater 90 does not overlap the substrate W held by the spin chuck 10 in a plan view.

[0062] The drive actuator 96ac moves the heater 90 etc. horizontally along a path that is arcuate in plan view by rotating the heater 90 etc. about a rotation axis A2 that extends vertically outside the processing cup 21. Because the radius of the arcuate path is large, the heater 90 etc. moves horizontally along a path that can be regarded as a straight line in plan view. The drive actuator 96ac may translate the heater 90 etc. horizontally instead of rotating it.

[0063] The drive actuator 96ac is a device that converts drive energy, which may be electric, fluid, magnetic, thermal, or chemical energy, into mechanical work. The drive actuator 96ac includes an electric motor (rotary motor), a linear motor, an air cylinder, and other devices. When the drive actuator 96ac is an electric motor and moves the heater 90 or the like horizontally in parallel, the rotation of the drive actuator 96ac may be converted into linear motion of the heater 90 or the like by a motion converter such as a ball screw and a ball nut.

[0064] Next, the heater 90 and the inner nozzle 93 will be described.

[0065] Fig. 4 is a cross-sectional view of the heater 90, the inner nozzle 93, and the exhaust guide 94 taken along a plane including the central axis CL of the light source cover 92. Fig. 5 is a schematic view of the heater 90, the inner nozzle 93, and the exhaust guide 94 as viewed from below. Fig. 6 is an enlarged view of a portion of Fig. 4. In Fig. 5, the discharge port 93d of the inner nozzle 93 and the suction port 95i of the exhaust guide 94 are filled in black.

[0066] The central axis CL of the light source cover 92 is a virtual straight line. Fig. 4 to Fig. 6 show an example in which the central axis CL is a straight line that passes through the center of the central opening 92op of the light source cover 92 and extends in a direction perpendicular to the lower surface 92sL of the light source cover 92. In the following description, the axial direction Da of the light source cover 92 represents a direction parallel to the central axis CL, the radial direction Dr of the light source cover 92 represents a direction perpendicular to the central axis CL, and the circumferential direction Dc of the light source cover 92 represents a direction around the central axis CL. When the central axis CL is vertical, the axial direction Da of the light source cover 92 corresponds to the vertical direction and the up-down direction.

[0067] As described above, the processing unit 2 includes the heater 90 for heating the substrate W, and the inner nozzle 93 for supplying gas between the substrate W and the heater 90. The heater 90 heats the substrate W by irradiating light onto the substrate W held by the spin chuck 10. As shown in Fig. 4, the heater 90 includes a light source 91 that emits light such as visible light or infrared light when supplied with power, and a light source cover 92 that covers the light source 91.

[0068] The light source cover 92 includes a bottom wall 92b disposed below the light source 91, an inner peripheral wall 92i surrounding the central axis CL of the light source cover 92 on the central axis CL side of the light source 91, an outer peripheral wall 92o surrounding the central axis CL of the light source 91 and the light source cover 92, and a plate-shaped top wall 92t protruding inward from an upper end of the outer peripheral wall 92o around the entire circumference of the outer peripheral wall 92o. Figures 4 and 5 show an example in which the bottom wall 92b is a horizontal disk with a circular hole in the center, the outer peripheral wall 92o and the inner peripheral wall 92i are two vertical concentric cylinders, and the top wall 92t is a horizontal plate-shaped ring concentric with the outer peripheral wall 92o and the inner peripheral wall 92i.

[0069] The inner peripheral wall 92i extends from the inner periphery of the bottom wall 92b to the opposite side of the substrate W. The outer peripheral wall 92o extends from the outer periphery of the bottom wall 92b to the opposite side of the substrate W. The inner peripheral wall 92i is longer in the axial direction Da of the light source cover 92 than the outer peripheral wall 92o. The upper end of the inner peripheral wall 92i is disposed above the upper end of the outer peripheral wall 92o. The upper end of the inner peripheral wall 92i is disposed above the upper surface of the top wall 92t. The top wall 92t and the outer peripheral wall 92o surround the inner peripheral wall 92i. The inner peripheral surface of the top wall 92t and the inner peripheral surface of the outer peripheral wall 92o are horizontally separated from the outer peripheral surface of the inner peripheral wall 92i over the entire circumference of the light source cover 92. The inner peripheral surface of the top wall 92t is disposed outside the light source 91.

[0070] When the light source 91 emits light while the heater 90 is disposed above the substrate W, the light from the light source 91 passes through the bottom wall 92b and is irradiated onto the upper surface of the substrate W. This heats the upper surface of the substrate W. Substances between the light source 91 and the substrate W, such as the bottom wall 92b, are also heated by the light from the light source 91. The bottom wall 92b is made of a transparent material that transmits light, such as quartz. FIG. 4 shows an example in which the entire light source cover 92 is a single member made of quartz. In this example, the bottom wall 92b is integral with the inner peripheral wall 92i, the outer peripheral wall 92o, and the top wall 92t. At least one of the inner peripheral wall 92i, the outer peripheral wall 92o, and the top wall 92t may be a member fixed to the bottom wall 92b and separate from the bottom wall 92b.

[0071] As shown in Fig. 6, the surface of the light source cover 92 includes an inner circumferential surface 92si surrounding the central axis CL of the light source cover 92, and an outer circumferential surface 92so surrounding the central axis CL of the light source cover 92 outside the inner circumferential surface 92si. The surface of the light source cover 92 further includes an upper surface 92su extending inward from the upper end of the outer circumferential surface 92so of the light source cover 92, and a lower surface 92sL extending from the lower end of the inner circumferential surface 92si of the light source cover 92 to the lower end of the outer circumferential surface 92so of the light source cover 92. Fig. 6 shows an example in which the bottom wall 92b and the inner circumferential surface of the inner circumferential wall 92i correspond to the inner circumferential surface 92si of the light source cover 92. In this example, the outer circumferential surfaces of the bottom wall 92b and the outer circumferential wall 92o correspond to the outer circumferential surface 92so of the light source cover 92, the lower surface of the bottom wall 92b corresponds to the lower surface 92sL of the light source cover 92, and the upper surfaces of the outer circumferential wall 92o and the top wall 92t correspond to the upper surface 92su of the light source cover 92, respectively.

[0072] The inner peripheral surface 92si of the light source cover 92 is a vertical cylindrical surface (excluding the top surface and the bottom surface, which are parallel circular flat surfaces) with a constant or nearly constant diameter. The same is true for the outer peripheral surface 92so of the light source cover 92. The outer peripheral surface 92so of the light source cover 92 is concentric with the inner peripheral surface 92si of the light source cover 92. The diameter of a part or all of the inner peripheral surface 92si of the light source cover 92 may change stepwise or continuously as it approaches the lower end of the inner peripheral surface 92si of the light source cover 92. The horizontal cross section of the inner peripheral surface 92si of the light source cover 92 may be a shape other than a circle. The same is true for the outer peripheral surface 92so of the light source cover 92 in terms of diameter and cross section. The outer peripheral surface 92so of the light source cover 92 may be eccentric with respect to the inner peripheral surface 92si of the light source cover 92, or may be a shape that is not similar to the inner peripheral surface 92si of the light source cover 92.

[0073] The upper surface 92su of the light source cover 92 is an annular horizontal surface concentric with the inner circumferential surface 92si of the light source cover 92. The lower surface 92sL of the light source cover 92 is a circular horizontal surface concentric with the inner circumferential surface 92si of the light source cover 92. The lower surface 92sL of the light source cover 92 is an example of an opposing surface that directly faces the upper surface of the substrate W. The lower surface 92sL of the light source cover 92 corresponds to the lower surface of the heater 90. The size of the light source cover 92 corresponds to the size of the heater 90. The light source cover 92 is smaller than the substrate W in a planar view. Therefore, the lower surface 92sL of the light source cover 92 is also smaller than the substrate W in a planar view. The outer diameter of the lower surface 92sL of the light source cover 92 may be less than the radius of the substrate W.

[0074] 5 shows an example in which the lower surface 92sL of the light source cover 92 is a circular horizontal surface with a circular hole in the center. The lower surface 92sL of the light source cover 92 includes an inner periphery 92ci surrounding the central axis CL of the light source cover 92 and an outer periphery 92co surrounding the inner periphery 92ci. The inner periphery 92ci of the lower surface 92sL of the light source cover 92 is a circle whose center is located on the central axis CL of the light source cover 92. The outer periphery 92co of the lower surface 92sL of the light source cover 92 is a circle concentric with the inner periphery 92ci of the lower surface 92sL of the light source cover 92. The inner periphery 92ci of the lower surface 92sL of the light source cover 92 may be a shape other than a circle. The same applies to the outer periphery 92co of the lower surface 92sL of the light source cover 92. The outer periphery 92co of the lower surface 92sL of the light source cover 92 may be eccentric with respect to the inner periphery 92ci of the lower surface 92sL of the light source cover 92, or may have a shape that is not similar to the inner periphery 92ci of the lower surface 92sL of the light source cover 92.

[0075] As shown in FIG. 6, the inner circumferential surface 92si of the light source cover 92 is open at the lower surface 92sL of the light source cover 92. The lower end of the inner circumferential surface 92si of the light source cover 92 corresponds to the inner circumferential surface 92ci of the lower surface 92sL of the light source cover 92. The inner circumferential surface 92ci of the lower surface 92sL of the light source cover 92 forms a central opening 92op that opens at the center of the lower surface 92sL of the light source cover 92. In the example shown in FIG. 6, the central opening 92op is a circle whose center is disposed on the central axis CL of the light source cover 92. The inner circumferential surface 92ci of the lower surface 92sL of the light source cover 92 corresponds to the outer periphery of the central opening 92op. The space inside the inner circumferential surface 92si of the light source cover 92 is connected to the space below the lower surface 92sL of the light source cover 92 through the central opening 92op.

[0076] 6 shows an example in which the lower surface 92sL of the light source cover 92 is horizontal from the inner periphery 92ci of the lower surface 92sL of the light source cover 92 to the outer periphery 92co of the lower surface 92sL of the light source cover 92. The lower surface 92sL of the light source cover 92 may be a curved surface whose inclination angle with respect to the horizontal plane changes continuously, or may be an inclined surface inclined at a constant angle with respect to the horizontal plane. The lower surface 92sL of the light source cover 92 may include at least one of a curved portion, an inclined portion, and a vertical portion, and a horizontal portion.

[0077] The light source cover 92 houses the light source 91. The light source 91 is a halogen lamp. The light source 91 may be an LED (light emitting diode) lamp, a xenon lamp, a carbon heater, a laser light source such as a VCSEL (Vertical Cavity Surface Emitting Laser), or a light source other than these.

[0078] FIG. 6 shows an example in which the light source 91 includes a rod-shaped arc tube 91p that emits light and two end blocks 91b attached to both ends of the arc tube 91p. The arc tube 91p includes a horizontal annular portion 91a that surrounds the central axis CL of the light source cover 92, and two straight portions 91s that extend upward from both ends of the annular portion 91a. The annular portion 91a surrounds the inner peripheral wall 92i above the bottom wall 92b. The annular portion 91a is disposed below the top wall 92t. The straight portion 91s extends upward from the annular portion 91a to the end block 91b. The straight portion 91s is disposed between the inner peripheral wall 92i and the outer peripheral wall 92o. The upper end of the end block 91b is disposed above the upper surface 92su of the light source cover 92. The end block 91b is removably fixed to a ring 96r described later. The arc tube 91p is suspended from a support arm 96ar via two end blocks 91b.

[0079] The heater 90 may or may not include a reflector 91r that reflects the light of the light source 91 toward the bottom wall 92b. The heater 90 may or may not include a heat sink 91h that cools the inside of the light source cover 92. FIG. 4 shows an example in which the reflector 91r and the heat sink 91h are provided. The reflector 91r and the heat sink 91h are disposed between the inner peripheral wall 92i and the outer peripheral wall 92o. The reflector 91r is disposed above the annular portion 91a. The heat sink 91h is disposed above the reflector 91r. The heat sink 91h may be an air-cooled heat sink that is cooled by airflow, or may be a water-cooled heat sink provided with a flow path through which a cooling liquid flows.

[0080] The inner nozzle 93 is inserted into a space inside the inner peripheral wall 92i of the light source cover 92. The inner nozzle 93 is cylindrical and surrounds the central axis CL of the light source cover 92 inside the inner peripheral wall 92i of the light source cover 92. The inner nozzle 93 may be concentric with the inner peripheral wall 92i of the light source cover 92, or may be eccentric with respect to the inner peripheral wall 92i of the light source cover 92. FIG. 6 shows an example of the former. The inner nozzle 93 protrudes upward from the inner peripheral wall 92i of the light source cover 92. The inner nozzle 93 extends downward from a ring cover 96c described later.

[0081] The inner nozzle 93 includes a cylindrical inner circumferential surface surrounding the central axis CL of the light source cover 92, and a cylindrical outer circumferential surface surrounding the central axis CL of the light source cover 92 outside the inner circumferential surface of the inner nozzle 93. The inner circumferential surface and the outer circumferential surface of the inner nozzle 93 are vertical cylindrical surfaces with a constant diameter. The diameter of a part or all of the inner circumferential surface of the inner nozzle 93 may change stepwise or continuously as it approaches the lower end of the inner circumferential surface of the inner nozzle 93. The same applies to the outer circumferential surface of the inner nozzle 93. The outer circumferential surface of the inner nozzle 93 is separated from the inner circumferential wall 92i of the light source cover 92 at any position. The outer circumferential surface of the inner nozzle 93 may be in contact with the inner circumferential wall 92i of the light source cover 92 at any position.

[0082] The inner nozzle 93 includes one or more outlets 93d opening on the surface of the inner nozzle 93, and an internal flow path 93f that guides the gas to be discharged from the one outlet 93d. Fig. 6 shows an example in which the number of outlets 93d is one. In this example, the outlet 93d opens on the lower surface of the inner nozzle 93, and the internal flow path 93f extends upward from the outlet 93d along the central axis CL of the light source cover 92. When the outer peripheral surface of the inner nozzle 93 is separated from the inner peripheral surface 92si of the light source cover 92, the one or more outlets 93d may open on the outer peripheral surface of the inner nozzle 93.

[0083] The outlet 93d of the inner nozzle 93 is disposed above the lower surface 92sL of the light source cover 92. The central opening 92op of the light source cover 92 is disposed below the outlet 93d of the inner nozzle 93. The outlet 93d may be disposed at the same height as the lower surface 92sL of the light source cover 92, or may be disposed below the lower surface 92sL of the light source cover 92. FIG. 6 shows an example in which the vertical distance from the lower surface 92sL of the light source cover 92 to the outlet 93d is smaller than the diameter of the outlet 93d, and the outlet 93d is disposed at the same height or approximately the same height as the upper surface of the bottom wall 92b of the light source cover 92.

[0084] The inner nozzle 93 discharges gas vertically downward from the discharge port 93d to form a cylindrical air flow whose diameter is equal or approximately equal to the discharge port 93d, or a truncated cone-shaped air flow whose diameter continuously increases with increasing distance from the discharge port 93d. As long as the gas discharged from the inner nozzle 93 is supplied between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W, the direction in which the discharge port 93d discharges the gas may be any of an obliquely upward direction, an obliquely downward direction, and a horizontal direction.

[0085] The substrate processing apparatus 1 includes an oxidizing gas pipe 93po that guides the oxidizing gas to be discharged from the inner nozzle 93, and an inert gas pipe 93pi that guides the inert gas to be discharged from the inner nozzle 93. Fig. 6 shows an example in which the oxidizing gas is ozone gas and the inert gas is nitrogen gas.

[0086] The oxidizing gas is a gas that oxidizes an organic substance to vaporize the organic substance. As long as the oxidizing gas can vaporize the organic substance by oxidation, the oxidizing gas may be oxygen gas having a higher oxygen concentration than air, or a gas other than ozone gas and oxygen gas. The organic substance may be a substance contained in the sublimable substance-containing liquid, or a substance remaining on the substrate W after the sublimable substance is sublimated, or may be a substance other than these. The organic substance may be solid or liquid, or may be semi-solid.

[0087] The substrate processing apparatus 1 includes an oxidizing gas valve 93vo that switches between an open state that passes the oxidizing gas flowing in the oxidizing gas pipe 93po toward the inner nozzle 93 and a closed state that stops the oxidizing gas flowing in the oxidizing gas pipe 93po toward the inner nozzle 93, and a flow rate adjustment valve 93fo that changes the flow rate of the oxidizing gas supplied from the oxidizing gas pipe 93po to the inner nozzle 93. The substrate processing apparatus 1 further includes an inert gas valve 93vi that switches between an open state that passes the inert gas flowing in the inert gas pipe 93pi toward the inner nozzle 93 and a closed state that stops the inert gas flowing in the inert gas pipe 93pi toward the inner nozzle 93, and a flow rate adjustment valve 93fi that changes the flow rate of the inert gas supplied from the inert gas pipe 93pi to the inner nozzle 93.

[0088] When the oxidizing gas valve 93vo is opened, that is, when the oxidizing gas valve 93vo is switched from a closed state to an open state, the oxidizing gas is supplied from the oxidizing gas pipe 93po to the inner nozzle 93 at a flow rate corresponding to the opening degree of the flow rate adjustment valve 93fo, and is discharged from the outlet 93d of the inner nozzle 93. Similarly, when the inert gas valve 93vi is opened, the inert gas is supplied from the inert gas pipe 93pi to the inner nozzle 93 at a flow rate corresponding to the opening degree of the flow rate adjustment valve 93fi, and is discharged from the outlet 93d of the inner nozzle 93. When both the oxidizing gas valve 93vo and the inert gas valve 93vi are opened, a mixed gas of the oxidizing gas and the inert gas is discharged from the outlet 93d of the inner nozzle 93. The ratio of the oxidizing gas and the inert gas contained in the mixed gas is changed according to the opening degrees of the flow rate adjustment valve 93fo and the flow rate adjustment valve 93fi.

[0089] As described above, the oxidizing gas is a gas that oxidizes organic matter to vaporize the organic matter. The oxidizing gas is a gas that contains an oxidizing substance having oxidizing power, such as ozone. The gas discharged from the inner nozzle 93 is preferably one having a higher concentration of the oxidizing substance. However, if the oxidizing gas comes into contact with a member that is not resistant to the oxidizing gas, the member may be corroded by the oxidizing gas. In order to prevent such corrosion, the concentration of the oxidizing substance in the mixed gas of the oxidizing gas and the inert gas may be adjusted to a value that can oxidize and vaporize the organic matter and prevent corrosion of members other than the heater 90, etc.

[0090] The gas to be discharged from the inner nozzle 93 may be supplied to the inner nozzle 93 after being heated, or may be supplied to the inner nozzle 93 without being heated. Fig. 6 shows an example of the former. In this example, the substrate processing apparatus 1 includes a gas heater 93h that heats the gas before being supplied to the inner nozzle 93. When at least one of the oxidizing gas valve 93vo and the inert gas valve 93vi is opened, at least one of the oxidizing gas and the inert gas is heated by the gas heater 93h and then supplied to the inner nozzle 93.

[0091] The light source 91, the light source cover 92, and the inner nozzle 93 are supported by a support arm 96ar. As described above, the support arm 96ar includes a head 96h that overlaps with the heater 90 in a plan view, and a shaft 96s that extends horizontally from the head 96h. The head 96h is disposed above the light source cover 92. The head 96h corresponds to a lid of the light source cover 92 that covers the entire internal space of the light source cover 92 from above the light source cover 92. The head 96h forms, together with the light source cover 92, a sealed space that houses the light source 91. The light source 91 is disposed between the head 96h and the light source cover 92 in the up-down direction.

[0092] As shown in FIG. 4, the head 96h includes a ring 96r surrounding the central axis CL of the light source cover 92 above the heater 90, and a ring cover 96c closing the space inside the ring 96r from above the ring 96r. The ring 96r is disposed above the light source cover 92. The lower surface of the ring 96r directly or indirectly faces the light source cover 92 from above. The lower surface of the ring 96r is a horizontal surface. The ring 96r surrounds the upper end of the end block 91b corresponding to the upper end of the light source 91. The ring cover 96c is disposed above the light source 91 and the ring 96r. The ring cover 96c is removably fixed to the ring 96r. FIG. 4 shows an example in which the ring cover 96c is fixed to the ring 96r by a bolt B1.

[0093] The support arm 96ar further includes an inner ring 96i surrounding the inner nozzle 93 and the inner peripheral wall 92i of the light source cover 92. The inner ring 96i is removably fixed to the ring cover 96c. The inner ring 96i is disposed below the ring cover 96c. The inner ring 96i protrudes downward from the center of the ring cover 96c. The inner ring 96i surrounds the central axis CL of the light source cover 92 inside the ring 96r. The inner nozzle 93 passes vertically inside the inner ring 96i. The inner peripheral wall 92i of the light source cover 92 is inserted into the inner ring 96i. The upper end of the inner peripheral wall 92i is disposed inside the inner ring 96i. The lower surface of the inner ring 96i, which corresponds to the lower end of the inner ring 96i, is disposed above the lower surface of the ring 96r.

[0094] The substrate processing apparatus 1 includes a seal ring 96si that closes the gap between the inner nozzle 93 and the inner ring 96i or the gap between the inner peripheral wall 92i and the inner ring 96i. FIG. 4 shows an example in which the seal ring 96si closes the gap between the inner peripheral wall 92i and the inner ring 96i. The seal ring 96si may be an O-ring or a ring-shaped packing, or may be something other than these. The seal ring 96si surrounds the entire circumference of the inner peripheral wall 92i between the inner peripheral wall 92i and the inner ring 96i. The seal ring 96si is in close contact with both the inner peripheral wall 92i and the inner ring 96i.

[0095] The inside of the light source cover 92 needs to be sealed to prevent liquids such as a processing liquid or mist containing this liquid from entering the light source cover 92. In particular, it is necessary to prevent oxidizing gases, which have strong oxidizing power, from entering the light source cover 92. On the other hand, because the light source cover 92 is removed from the support arm 96ar when replacing the light source 91, the detachability of the light source cover 92 also needs to be considered.

[0096] The seal ring 96si closes the gap between the light source cover 92 and the support arm 96ar, thereby preventing unwanted gases or liquids, such as oxidizing gas, from entering the light source cover 92. Fig. 6 shows an example in which the vertical distance from the upper end of the inner circumferential wall 92i to the upper end of the seal ring 96si is smaller than the outer diameter of the inner circumferential wall 92i. In this example, the insertion amount of the inner circumferential wall 92i into the seal ring 96si is small, so that the light source cover 92 can be easily attached to and detached from the seal ring 96si.

[0097] As shown in FIG. 6, the support arm 96ar includes a support bracket 96bs that supports the light source cover 92 below the lower surface of the ring 96r, an upper bracket 96bu that is positioned above the support bracket 96bs, and one or more bolts B2 that move the support bracket 96bs up and down relative to the upper bracket 96bu.

[0098] 6 shows an example in which the support bracket 96bs is supported by a lower bracket 96bL disposed below the support bracket 96bs. In this example, the lower bracket 96bL moves up and down relative to the upper bracket 96bu, thereby changing the vertical distance between the upper bracket 96bu and the support bracket 96bs. The support bracket 96bs supports the light source cover 92 by contacting the lower surface of the top wall 92t of the light source cover 92. The support bracket 96bs may contact a surface of the light source cover 92 other than the lower surface of the top wall 92t, or may indirectly support the light source cover 92.

[0099] The upper bracket 96bu is separated upward from the support bracket 96bs. The lower bracket 96bL is in contact with the lower surface of the support bracket 96bs. The bolt B2 passes through the upper bracket 96bu, the support bracket 96bs, and the lower bracket 96bL in the vertical direction. The lower bracket 96bL is suspended from the upper bracket 96bu by the bolt B2. The male thread of the upper bracket 96bu is engaged with the female thread provided in the lower bracket 96bL. When the bolt B2 is rotated relative to the upper bracket 96bu, the lower bracket 96bL approaches the upper bracket 96bu or moves away from the upper bracket 96bu. This increases or decreases the distance between the upper bracket 96bu and the support bracket 96bs in the vertical direction.

[0100] The support bracket 96bs is movable up and down with respect to the head 96h between a fixed position where the light source cover 92 is fixed to the head 96h and an attachment / detachment position where the light source cover 92 is attached to and detached from the head 96h. Fig. 6 shows the support bracket 96bs in the fixed position.

[0101] When attaching the light source cover 92 to the head 96h, the lower surface of the top wall 92t is brought into contact with the support bracket 96bs located in the attachment / detachment position with the upper surface 92su of the light source cover 92, including the upper surface of the top wall 92t, separated from the lower surface of the ring 96r. In this state, when the support bracket 96bs is moved upward relative to the upper bracket 96bu, the support bracket 96bs is placed in the fixed position and the upper surface 92su of the light source cover 92 is pressed against the lower surface of the ring 96r. This fixes the light source cover 92 to the head 96h.

[0102] When the light source cover 92 is removed from the head 96h, the support bracket 96bs is lowered from the fixed position to the detachment position. As a result, the upper surface 92su of the light source cover 92 is separated from the lower surface of the ring 96r with the lower surface of the top wall 92t in contact with the support bracket 96bs. When the support bracket 96bs is disposed at the fixed position, the gap between the light source cover 92 and the ring 96r may be closed with a seal ring 96so such as an O-ring. FIG. 6 shows an example in which the seal ring 96so is disposed in an annular groove recessed upward from the lower surface of the ring 96r. The seal ring 96so is interposed between the light source cover 92 and the ring 96r over the entire circumference of the light source cover 92.

[0103] When the light source cover 92 is fixed to the head 96h, at least a part of the support bracket 96bs is disposed below the lower surface of the top wall 92t. At least a part of the lower bracket 96bL is also disposed below the lower surface of the top wall 92t. The lower bracket 96bL can pass through the inside of the top wall 92t. The support bracket 96bs may be able to pass through the inside of the top wall 92t, or may not be able to pass through the inside of the top wall 92t. In the latter case, the support bracket 96bs may include a plurality of split brackets that can move horizontally relative to the lower bracket 96bL. In this case, the split brackets are disposed below the top wall 92t, and then the plurality of split brackets are moved horizontally relative to the lower bracket 96bL, so that a portion of each split bracket is disposed directly below the top wall 92t.

[0104] Next, the exhaust guide 94 will be described.

[0105] Fig. 7A is an enlarged view of a portion of Fig. 4. Fig. 7B is a cross-sectional view of the exhaust guide 94. The two-dot chain line in Fig. 7A represents a vertical cylindrical surface whose central axis coincides with the central axis CL of the light source cover 92. Fig. 7B shows a cross-section of the exhaust guide 94 along this cylindrical surface. In Figs. 7A and 7B, the exhaust ring 94r is depicted as being a single, integrated member. The exhaust ring 94r may be multiple members fixed to one another.

[0106] As described above, the processing unit 2 includes an exhaust guide 94 that sucks in the gas supplied between the substrate W and the heater 90 by the inner nozzle 93. The exhaust guide 94 is cylindrical and surrounds the central axis CL of the light source cover 92. The exhaust guide 94 includes an exhaust ring 94r that surrounds the central axis CL of the light source cover 92, a flange 94f that protrudes outward from the upper end of the exhaust ring 94r around the entire circumference of the exhaust ring 94r, and an exhaust tube 94t that protrudes outward from the exhaust ring 94r at a position lower than the flange 94f. FIG. 7A shows an example in which the exhaust ring 94r is a vertical cylinder, the flange 94f is a horizontal plate-shaped ring concentric with the exhaust ring 94r, and the exhaust tube 94t is a horizontal cylinder.

[0107] The exhaust guide 94 is supported by a support arm 96ar. The exhaust guide 94 is suspended from the support arm 96ar. The exhaust guide 94 overlaps the support arm 96ar in a plan view. Fig. 7A shows an example in which the exhaust guide 94 is removably fixed to the support arm 96ar by a bolt B3 inserted into a through hole that vertically passes through the flange 94f. The method of fixing the exhaust guide 94 to the support arm 96ar is not limited to this.

[0108] The flange 94f of the exhaust guide 94 and the top wall 92t of the light source cover 92 are disposed on opposite sides of the exhaust ring 94r of the exhaust guide 94 and the outer peripheral wall 92o of the light source cover 92. With the exhaust guide 94 and the light source cover 92 fixed to the support arm 96ar, at least a part of the flange 94f is disposed at the same height as the top wall 92t. FIG. 7A shows an example in which the upper surface of the flange 94f is disposed at the same height as the upper surface of the top wall 92t, and the lower surface of the flange 94f is disposed below the lower surface of the top wall 92t. The entire flange 94f may be disposed above or below the top wall 92t.

[0109] The exhaust guide 94 includes an inner circumferential surface 94si that surrounds the central axis CL of the light source cover 92, and an outer circumferential surface 94so that surrounds the central axis CL of the light source cover 92 outside the inner circumferential surface 94si. The exhaust guide 94 further includes an upper surface 94su that is located at the uppermost position in the exhaust guide 94, and a lower surface 94sL that is located at the lowermost position in the exhaust guide 94.

[0110] 7A shows an example in which the inner peripheral surface of the exhaust ring 94r corresponds to the inner peripheral surface 94si of the exhaust guide 94. In this example, the outer peripheral surface of the exhaust ring 94r corresponds to the outer peripheral surface 94so of the exhaust guide 94, the upper surfaces of the exhaust ring 94r and flange 94f correspond to the upper surface 94su of the exhaust guide 94, and the lower surface of the exhaust ring 94r corresponds to the lower surface 94sL of the exhaust guide 94. The outer peripheral surface of the exhaust ring 94r extends downward from the lower surface of the flange 94f.

[0111] 7A, the upper surface 94su and the lower surface 94sL of the exhaust guide 94 are two annular horizontal surfaces. The lower surface 94sL of the exhaust guide 94 directly faces the upper surface of the substrate W. The exhaust guide 94 is smaller than the substrate W in a planar view. The outer diameter of the lower surface 94sL of the exhaust guide 94 may be less than the radius of the substrate W. The outer diameter of the lower surface 94sL of the exhaust guide 94 is greater than the height of the exhaust guide 94 (the vertical distance from the lower surface 94sL of the exhaust guide 94 to the upper surface 94su of the exhaust guide 94).

[0112] An inner peripheral surface 94si and an outer peripheral surface 94so of the exhaust guide 94 are disposed between an upper surface 94su and a lower surface 94sL of the exhaust guide 94. The inner peripheral surface 94si of the exhaust guide 94 is a vertical cylindrical surface. The outer peripheral surface 94so of the exhaust guide 94 is a vertical cylindrical surface concentric with the inner peripheral surface 94si of the exhaust guide 94. The central axes of the inner peripheral surface 94si and the outer peripheral surface 94so of the exhaust guide 94 are positioned on the central axis CL of the light source cover 92.

[0113] The diameter of part or all of the inner circumferential surface 94si of the exhaust guide 94 may change stepwise or continuously as the diameter approaches the lower end of the inner circumferential surface 94si of the exhaust guide 94. The horizontal cross section of the inner circumferential surface 94si of the exhaust guide 94 may be a shape other than a circle. The same applies to the diameter and cross section of the outer circumferential surface 94so of the exhaust guide 94. The outer circumferential surface 94so of the exhaust guide 94 may be eccentric with respect to the inner circumferential surface 94si of the exhaust guide 94, or may have a shape that is not similar to that of the inner circumferential surface 94si of the exhaust guide 94.

[0114] An inner peripheral surface 94si of the exhaust guide 94 surrounds an outer peripheral surface 92so of the light source cover 92. The inner peripheral surface 94si of the exhaust guide 94 is separated from the outer peripheral surface 92so of the light source cover 92 at any position. A part or the whole of the inner peripheral surface 94si of the exhaust guide 94 may be in contact with the outer peripheral surface 92so of the light source cover 92.

[0115] The distance between the outer peripheral surface 92so of the light source cover 92 and the inner peripheral surface 94si of the exhaust guide 94 in the radial direction Dr of the light source cover 92 may be equal to or different from the thickness of the exhaust guide 94, i.e., the distance in the radial direction Dr of the light source cover 92 from the inner peripheral surface 94si of the exhaust guide 94 to the outer peripheral surface 94so of the exhaust guide 94. Fig. 7A shows an example in which the distance between the outer peripheral surface 92so of the light source cover 92 and the inner peripheral surface 94si of the exhaust guide 94 in the radial direction Dr of the light source cover 92 is smaller than the thickness of the exhaust guide 94.

[0116] Next, the flow path of the exhaust guide 94 that guides the gas will be described.

[0117] As shown in FIG. 7A, the exhaust guide 94 includes at least one suction port 95i for sucking in gas discharged from the inner nozzle 93, at least one exhaust port 95o for discharging gas sucked into the at least one suction port 95i, and an internal flow path 95f for guiding gas from the at least one suction port 95i to the at least one exhaust port 95o.

[0118] 7A shows an example in which one suction port 95i and one exhaust port 95o are provided. The suction port 95i opens at a lower surface 94sL of the exhaust guide 94. The exhaust port 95o opens at an end surface of an exhaust tube 94t protruding outward from an outer circumferential surface 94so of the exhaust guide 94. The suction port 95i is continuous around the entire circumference of the light source cover 92. The suction port 95i is an endless suction port that surrounds the central axis CL of the light source cover 92 outside the central opening 92op of the light source cover 92.

[0119] 7A shows an example in which the suction port 95i is disposed at the same height as the lower surface 92sL of the light source cover 92, and the suction port 95i vertically draws in gas upward. As long as the suction port 95i can draw in gas discharged from the inner nozzle 93, the suction port 95i may be disposed above or below the lower surface 92sL of the light source cover 92. The direction in which the suction port 95i draws in gas is not limited to the vertical direction, and may be a direction extending obliquely upward or downward so as to move away from the central axis CL of the light source cover 92, or may be a horizontal direction moving away from the central axis CL of the light source cover 92.

[0120] 7A shows an example in which the internal flow passage 95f includes multiple layers stacked in a direction parallel to the central axis CL of the light source cover 92. In this example, five layers are provided in the internal flow passage 95f. The five layers, namely, the first layer, the second layer, the third layer, the fourth layer, and the fifth layer, are arranged vertically in this order from the top. The gas sucked into the exhaust guide 94 through the suction port 95i of the exhaust guide 94 passes through the fifth layer, the fourth layer, the third layer, the second layer, and the first layer in this order, and is discharged to the outside of the exhaust guide 94 from the exhaust port 95o of the exhaust guide 94.

[0121] As shown in FIG. 7B, the first layer closest to the exhaust port 95o among the multiple layers is a first cylindrical flow path 95ta surrounding the central axis CL of the light source cover 92. The second layer second closest to the exhaust port 95o among the multiple layers includes a plurality of first linear flow paths 95La arranged at intervals in the circumferential direction Dc of the light source cover 92. The third layer third closest to the exhaust port 95o among the multiple layers is a second cylindrical flow path 95tb surrounding the central axis CL of the light source cover 92. The fourth layer fourth closest to the exhaust port 95o among the multiple layers includes a plurality of second linear flow paths 95Lb arranged at intervals in the circumferential direction Dc of the light source cover 92. The fifth layer farthest from the exhaust port 95o among the multiple layers is a third cylindrical flow path 95tc surrounding the central axis CL of the light source cover 92.

[0122] The first cylindrical flow path 95ta is continuous around the entire circumference of the light source cover 92. As long as all the first linear flow paths 95La are connected to the first cylindrical flow path 95ta, the first cylindrical flow path 95ta may have both ends separated in the circumferential direction Dc of the light source cover 92. The same applies to the second cylindrical flow path 95tb and the third cylindrical flow path 95tc. In the case of the third cylindrical flow path 95tc, as long as all the second linear flow paths 95Lb are connected to the third cylindrical flow path 95tc, the third cylindrical flow path 95tc may be continuous around the entire circumference of the light source cover 92 or may have both ends separated in the circumferential direction Dc of the light source cover 92.

[0123] In the example shown in FIG. 7B, the lower end (upstream end) of the third cylindrical flow path 95tc corresponds to the suction port 95i. Each second linear flow path 95Lb extends vertically from the upper end of the third cylindrical flow path 95tc to the lower end of the second cylindrical flow path 95tb. Each first linear flow path 95La extends vertically from the upper end of the second cylindrical flow path 95tb to the lower end of the first cylindrical flow path 95ta. The first cylindrical flow path 95ta is connected to the discharge port 95o through a downstream flow path 95d described later.

[0124] FIG. 7A shows an example in which the first cylindrical flow path 95ta, the second cylindrical flow path 95tb, and the third cylindrical flow path 95tc are each a vertical cylinder. The first cylindrical flow path 95ta, the second cylindrical flow path 95tb, and the third cylindrical flow path 95tc are arranged on a vertical cylindrical surface (on the two-dot chain line shown in FIG. 7A) whose central axis coincides with the central axis CL of the light source cover 92. The thickness of the first cylindrical flow path 95ta, that is, the distance in the radial direction Dr of the light source cover 92 from the inner peripheral surface of the first cylindrical flow path 95ta to the outer peripheral surface of the first cylindrical flow path 95ta, is constant at any position. The same is true for the second cylindrical flow path 95tb and the third cylindrical flow path 95tc. The inner diameter of the first cylindrical flow path 95ta is equal to the inner diameter of the second cylindrical flow path 95tb and equal to the inner diameter of the third cylindrical flow path 95tc. The outer diameter of the first cylindrical passage 95ta is equal to the outer diameter of the second cylindrical passage 95tb, and is equal to the outer diameter of the third cylindrical passage 95tc.

[0125] The first linear flow paths 95La extend vertically on a vertical cylindrical surface (on a two-dot chain line shown in FIG. 7A) whose central axis coincides with the central axis CL of the light source cover 92. The second linear flow paths 95Lb also extend vertically on this cylindrical surface. The distance in the radial direction Dr of the light source cover 92 from the central axis CL of the light source cover 92 to the first linear flow paths 95La is equal to the distance in the radial direction Dr of the light source cover 92 from the central axis CL of the light source cover 92 to the second linear flow paths 95Lb. The distance in the radial direction Dr of the light source cover 92 from the central axis CL of the light source cover 92 to the first linear flow paths 95La is equal to the distance in the radial direction Dr of the light source cover 92 from the central axis CL of the light source cover 92 to the first cylindrical flow path 95ta. The same is true for the distances to the second cylindrical flow paths 95tb and the third cylindrical flow paths 95tc.

[0126] As shown in FIG. 7B, the upper ends of the first linear flow paths 95La are arranged at the same height. The lower ends of the first linear flow paths 95La are arranged at the same height. The same applies to the upper and lower ends of the second linear flow paths 95Lb. The height of the first linear flow paths 95La (length in the vertical direction; the same applies below) may be equal to or different from the height of the second linear flow paths 95Lb (length in the vertical direction; the same applies below). The height of the first linear flow paths 95La may be equal to or different from the height of at least one of the first cylindrical flow paths 95ta, the second cylindrical flow paths 95tb, and the third cylindrical flow paths 95tc. The same applies to the height of the second linear flow paths 95Lb.

[0127] FIG. 7B shows an example in which the height of the first linear flow passage 95La is equal to the height of the first cylindrical flow passage 95ta and the third cylindrical flow passage 95tc, and is greater than the height of the second linear flow passage 95Lb and the second cylindrical flow passage 95tb. In this example, each first linear flow passage 95La is vertical from the first cylindrical flow passage 95ta to the second cylindrical flow passage 95tb, and each second linear flow passage 95Lb is vertical from the second cylindrical flow passage 95tb to the third cylindrical flow passage 95tc. At least one of the multiple first linear flow passages 95La may be inclined with respect to the vertical plane. The same applies to the multiple second linear flow passages 95Lb. For example, the first linear flow passage 95La may be inclined in at least one of the radial direction Dr and the circumferential direction of the light source cover 92.

[0128] As shown in FIG. 7B, the first linear flow paths 95La are arranged at equal intervals in the circumferential direction Dc of the light source cover 92. The second linear flow paths 95Lb are also arranged at equal intervals in the circumferential direction Dc of the light source cover 92. The number of the first linear flow paths 95La may be equal to or different from the number of the second linear flow paths 95Lb. The pitch of the first linear flow paths 95La represents the shortest distance between the central axes of the two first linear flow paths 95La closest to the circumferential direction Dc of the light source cover 92. The same applies to the pitch of the second linear flow paths 95Lb. The pitch of the first linear flow paths 95La may be equal to or different from the pitch of the second linear flow paths 95Lb.

[0129] The pitch of the first linear flow channel 95La is larger than the diameter of the first linear flow channel 95La. The pitch of the second linear flow channel 95Lb is larger than the diameter of the second linear flow channel 95Lb. The diameter of the first linear flow channel 95La may be equal to or different from the diameter of the second linear flow channel 95Lb. The pitch of the first linear flow channel 95La may be equal to or different from the height of the first linear flow channel 95La. The same applies to the pitch of the second linear flow channel 95Lb. FIG. 7B shows an example in which the pitch of the first linear flow channel 95La is shorter than the height of the first linear flow channel 95La, and the pitch of the second linear flow channel 95Lb is shorter than the height of the second linear flow channel 95Lb.

[0130] 7B shows an example in which at least one of the multiple first linear flow paths 95La does not overlap with all of the second linear flow paths 95Lb when viewed in the axial direction Da of the light source cover 92, which is a direction parallel to the central axis CL of the light source cover 92. In other words, in this example, even if the multiple first linear flow paths 95La are extended in the axial direction Da of the light source cover 92, at least one of the multiple first linear flow paths 95La does not intersect with all of the second linear flow paths 95Lb. In this example, all of the first linear flow paths 95La do not have to overlap with all of the second linear flow paths 95Lb. In FIG. 7B, the two two-dot chain lines arranged in the second cylindrical flow path 95tb correspond to lines extending the leftmost first linear flow path 95La in the axial direction Da of the light source cover 92.

[0131] The internal flow passage 95f of the exhaust guide 94 includes at least one downstream flow passage 95d extending from a layer closest to the exhaust port 95o among the multiple layers to at least one exhaust port 95o. In the example shown in FIG. 7A, the number of exhaust ports 95o is one, so the number of downstream flow passages 95d is also one. In this example, the downstream flow passage 95d extends from the first cylindrical flow passage 95ta to the exhaust port 95o. The downstream flow passage 95d is formed by the exhaust tube 94t. The upstream end of the downstream flow passage 95d opens at the inner surface of the first cylindrical flow passage 95ta. The downstream end of the downstream flow passage 95d opens at the end face of the exhaust tube 94t. The downstream end of the downstream flow passage 95d corresponds to the exhaust port 95o.

[0132] The downstream flow passage 95d extends horizontally from the first cylindrical flow passage 95ta to the exhaust port 95o in a direction perpendicular to the central axis CL of the light source cover 92. The central axis of the downstream flow passage 95d is horizontal from the upstream end of the downstream flow passage 95d to the downstream end of the downstream flow passage 95d. The central axis of the downstream flow passage 95d may be inclined with respect to a horizontal plane. The central axis of the downstream flow passage 95d may be a straight line or a curved line extending from the upstream end of the downstream flow passage 95d to the downstream end of the downstream flow passage 95d, or may include one or more straight line portions and one or more curved portions. The central axis of the downstream flow passage 95d may extend along a tangent to the first cylindrical flow passage 95ta, or may be inclined with respect to the tangent and normal of the first cylindrical flow passage 95ta.

[0133] The substrate processing apparatus 1 includes an exhaust pipe 95p that transmits the suction force of a suction force generator 95g such as a pump or an aspirator to the exhaust guide 94. The exhaust pipe 95p is attached to an exhaust tube 94t. When the suction force generator 95g generates a suction force, gas is sucked into the internal flow path 95f from the suction port 95i, and then exhausted from the exhaust port 95o to the exhaust pipe 95p. When the suction force generator 95g generates a suction force with the heater 90 disposed above the substrate W, an airflow is formed that flows radially between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W toward the suction port 95i, and the airflow is sucked into the suction force generator 95g through the suction port 95i, the internal flow path 95f, and the exhaust port 95o.

[0134] Since the upstream end of the downstream flow passage 95d of the exhaust guide 94 is disposed between the upper end and the lower end of the first cylindrical flow passage 95ta of the exhaust guide 94, when the suction force generating device 95g generates a suction force, an airflow flowing in the circumferential direction Dc of the light source cover 92 toward the exhaust port 95o is formed in the first cylindrical flow passage 95ta. As a result, the suction force of the suction force generating device 95g is dispersed in the circumferential direction Dc of the light source cover 92 in the first cylindrical flow passage 95ta, and is transmitted from the first cylindrical flow passage 95ta to all the first linear flow passages 95La. Accordingly, the suction force of the suction force generating device 95g is transmitted from all the first linear flow passages 95La to the second cylindrical flow passages 95tb, and then transmitted from the second cylindrical flow passages 95tb to all the second linear flow passages 95Lb. As a result, the gas is sucked into the third cylindrical flow path 95tc from the entire circumference of the suction port 95i, and flows from the third cylindrical flow path 95tc to all of the second linear flow paths 95Lb.

[0135] As described above, at least one of the multiple first linear flow paths 95La does not overlap any of the second linear flow paths 95Lb when viewed in the axial direction Da of the light source cover 92. When the first linear flow paths 95La overlap the second linear flow paths 95Lb when viewed in the axial direction Da of the light source cover 92, the suction force sucking in the gas in the first linear flow paths 95La is transmitted to the second linear flow paths 95Lb without being dispersed in the circumferential direction Dc of the light source cover 92 in the second cylindrical flow paths 95tb. In contrast, when the first linear flow paths 95La are shifted in the circumferential direction Dc of the light source cover 92 with respect to the second linear flow paths 95Lb, the suction force sucking in the gas in the first linear flow paths 95La is dispersed in the circumferential direction Dc of the light source cover 92 in the second cylindrical flow paths 95tb and then transmitted to the second linear flow paths 95Lb. This allows the suction force of the suction force generating device 95g to be distributed in the circumferential direction Dc of the light source cover 92 not only in the first cylindrical flow path 95ta but also in the second cylindrical flow path 95tb, allowing gas to be uniformly sucked into the suction port 95i.

[0136] Next, the electrical configuration of the substrate processing apparatus 1 will be described.

[0137] 8 is a block diagram showing an electrical configuration of the substrate processing apparatus 1. The control device 3 includes at least one computer. The computer includes a computer main body 3a and a peripheral device 3d connected to the computer main body 3a. The computer main body 3a includes a CPU 3b (central processing unit) that executes various commands, and a memory 3c that stores information. The peripheral device 3d includes a storage 3e that stores information such as a program P, a reader 3f that reads information from a removable medium RM, and a communication device 3g that communicates with other devices such as a host computer.

[0138] The control device 3 is connected to an input device and a display device. The input device is operated when an operator such as a user or a maintenance person inputs information to the substrate processing apparatus 1. The information is displayed on the screen of the display device. The input device may be any one of a keyboard, a pointing device, and a touch panel, or may be a device other than these. The substrate processing apparatus 1 may be provided with a touch panel display that serves as both the input device and the display device.

[0139] The CPU 3b executes a program P stored in the storage 3e. The program P in the storage 3e may be one that has been pre-installed in the control device 3, may be one that has been sent from the removable medium RM to the storage 3e via the reader 3f, or may be one that has been sent from an external device such as a host computer to the storage 3e via the communication device 3g.

[0140] The storage 3e and the removable medium RM are non-volatile memories that retain their memory even when power is not supplied. The storage 3e is, for example, a magnetic storage device such as a hard disk drive. The removable medium RM is, for example, an optical disk such as a compact disk or a semiconductor memory such as a memory card. The removable medium RM is an example of a computer-readable recording medium on which the program P is recorded. The removable medium RM is a non-transitory tangible recording medium.

[0141] The storage 3e stores a plurality of recipes. A recipe is information that specifies the processing content, processing conditions, and processing procedure of the substrate W. The plurality of recipes differ from each other in at least one of the processing content, processing conditions, and processing procedure of the substrate W. The control device 3 controls the substrate processing apparatus 1 so that the substrate W is processed according to the recipe specified by the host computer. The control device 3 is programmed to execute each of the following steps.

[0142] Next, an example of processing of the substrate W will be described.

[0143] 9 is a process diagram for explaining an example of processing of the substrate W performed by the substrate processing apparatus 1. In the following, reference will be made to FIGS.

[0144] The substrate W to be processed is, for example, a semiconductor wafer such as a silicon wafer. The substrate W may be a substrate W having a pattern P1 (see FIG. 10A) formed on the surface of the substrate W, or a substrate W having no pattern P1 formed on the surface of the substrate W. In the latter case, the pattern P1 may be formed in a first chemical liquid supplying step or a second chemical liquid supplying step described later.

[0145] When the substrate W is processed by the substrate processing apparatus 1, a loading step (step S1 in FIG. 9) of loading the substrate W into the chamber 4 is performed.

[0146] Specifically, with the blocking member 51 in the upper position, all of the guards 24 in the lower position, and all of the scan nozzles in the standby position, the center robot CR (see FIG. 1A) supports the substrate W with the hand Hc and causes the hand Hc to enter the chamber 4. The center robot CR then places the substrate W on the hand Hc on the multiple chuck pins 11 with the front surface of the substrate W facing upward. The multiple chuck pins 11 are then pressed against the edge surface of the substrate W to grip the substrate W. After placing the substrate W on the spin chuck 10, the center robot CR causes the hand Hc to retreat from inside the chamber 4.

[0147] Next, the gas valve 64 and the gas valve 84 are opened, and the central opening 61 of the blocking member 51 and the central opening 81 of the spin base 12 start discharging nitrogen gas. This fills the space between the substrate W and the blocking member 51 with nitrogen gas. Similarly, the space between the substrate W and the spin base 12 is filled with nitrogen gas. Meanwhile, the guard lifting unit 27 lifts at least one guard 24 from the lower position to the upper position. Thereafter, the spin motor 14 is driven, and the substrate W starts to rotate (step S2 in FIG. 9).

[0148] Next, a first chemical liquid supplying step (step S3 in FIG. 9) is performed in which DHF, which is an example of a chemical liquid, is supplied onto the upper surface of the substrate W to form a liquid film of DHF that covers the entire upper surface of the substrate W.

[0149] Specifically, with blocking member 51 in the upper position and at least one guard 24 in the upper position, first nozzle movement unit 34a moves first chemical liquid nozzle 31a and first rinsing liquid nozzle 35a from the standby position to the processing position. Then, first chemical liquid valve 33a is opened, and first chemical liquid nozzle 31a starts to discharge DHF. When a predetermined time has elapsed since first chemical liquid valve 33a was opened, first chemical liquid valve 33a is closed, and the discharge of DHF is stopped.

[0150] The DHF discharged from the first chemical liquid nozzle 31a collides with the upper surface of the substrate W rotating at the first chemical liquid supply speed, and then flows outward along the upper surface of the substrate W due to centrifugal force. Therefore, the DHF is supplied to the entire upper surface of the substrate W, and a liquid film of DHF is formed covering the entire upper surface of the substrate W. When the first chemical liquid nozzle 31a is discharging the DHF, the first nozzle movement unit 34a may move the collision position of the DHF against the upper surface of the substrate W so that the collision position passes through the center and the outer periphery, or may stop the collision position at the center. The same applies to the processing liquid supplied to the upper surface of the substrate W after the DHF.

[0151] Next, a first rinsing liquid supplying step (step S4 in FIG. 9) is performed in which pure water, which is an example of a rinsing liquid, is supplied to the upper surface of the substrate W to wash away DHF on the substrate W.

[0152] Specifically, with the blocking member 51 in the upper position, at least one guard 24 in the upper position, and the first chemical liquid nozzle 31a and the first rinse liquid nozzle 35a in the processing position, the first rinse liquid valve 37a is opened and the first rinse liquid nozzle 35a starts to discharge pure water. Before the discharge of pure water starts, the guard lifting unit 27 may vertically move at least one guard 24 to switch the guard 24 that receives the liquid discharged from the substrate W.

[0153] The pure water discharged from the first rinsing liquid nozzle 35a collides with the upper surface of the substrate W rotating at the first rinsing liquid supply speed, and then flows outward along the upper surface of the substrate W due to centrifugal force. The DHF on the substrate W is replaced with the pure water discharged from the first rinsing liquid nozzle 35a. This forms a liquid film of pure water that covers the entire upper surface of the substrate W. When a predetermined time has elapsed since the first rinsing liquid valve 37a was opened, the first rinsing liquid valve 37a is closed and the discharge of the pure water is stopped. Thereafter, the first nozzle moving unit 34a moves the first chemical liquid nozzle 31a and the first rinsing liquid nozzle 35a to the standby position.

[0154] Next, a second chemical liquid supplying step (step S5 in FIG. 9) is performed in which SC1, which is an example of a chemical liquid, is supplied onto the upper surface of the substrate W to form a liquid film of SC1 that covers the entire upper surface of the substrate W.

[0155] Specifically, with blocking member 51 in the upper position and at least one guard 24 in the upper position, second nozzle movement unit 34b moves second chemical liquid nozzle 31b and second rinsing liquid nozzle 35b from the standby position to the processing position. Then, second chemical liquid valve 33b is opened, and second chemical liquid nozzle 31b starts discharging SC1. Before discharging SC1 starts, guard lifting unit 27 may vertically move at least one guard 24 to switch guard 24 that receives the liquid discharged from substrate W.

[0156] The SC1 discharged from the second chemical liquid nozzle 31b collides with the upper surface of the substrate W rotating at the second chemical liquid supply speed, and then flows outward along the upper surface of the substrate W due to centrifugal force. The pure water on the substrate W is replaced with the SC1 discharged from the second chemical liquid nozzle 31b. This forms a liquid film of SC1 that covers the entire upper surface of the substrate W. When a predetermined time has elapsed since the second chemical liquid valve 33b was opened, the second chemical liquid valve 33b is closed, and the discharge of SC1 is stopped.

[0157] Next, a second rinsing liquid supplying step (step S6 in FIG. 9) is performed in which pure water, which is an example of a rinsing liquid, is supplied to the upper surface of the substrate W to wash away the SC1 on the substrate W.

[0158] Specifically, with the blocking member 51 in the upper position, at least one guard 24 in the upper position, and the second chemical liquid nozzle 31b and the second rinse liquid nozzle 35b in the processing position, the second rinse liquid valve 37b is opened and the second rinse liquid nozzle 35b starts to discharge deionized water. Before the discharge of deionized water starts, the guard lifting unit 27 may vertically move at least one guard 24 to switch the guard 24 that receives the liquid discharged from the substrate W.

[0159] The pure water discharged from the second rinsing liquid nozzle 35b collides with the upper surface of the substrate W rotating at the second rinsing liquid supply speed, and then flows outward along the upper surface of the substrate W due to centrifugal force. SC1 on the substrate W is replaced with the pure water discharged from the second rinsing liquid nozzle 35b. As a result, a liquid film of pure water is formed that covers the entire upper surface of the substrate W. When a predetermined time has elapsed since the second rinsing liquid valve 37b was opened, the second rinsing liquid valve 37b is closed, and the discharge of the pure water is stopped. Thereafter, the second nozzle moving unit 34b moves the second chemical liquid nozzle 31b and the second rinsing liquid nozzle 35b to the standby position.

[0160] Next, a replacement liquid supplying step (step S7 in FIG. 9) is performed in which IPA, which is an example of a replacement liquid, is supplied to the upper surface of the substrate W to replace the pure water on the substrate W with IPA.

[0161] Specifically, with at least one guard 24 in the upper position, the blocking member lifting unit 54 lowers the blocking member 51 from the upper position to the lower position. In this state, the replacement liquid valve 45 is opened, and the center nozzle 55 starts discharging IPA. Before discharging IPA starts, the guard lifting unit 27 may vertically move at least one guard 24 to switch the guard 24 that receives the liquid discharged from the substrate W.

[0162] The IPA discharged from the central nozzle 55 collides with the upper surface of the substrate W rotating at the replacement liquid supply speed, and then flows outward along the upper surface of the substrate W due to centrifugal force. The pure water on the substrate W is replaced with the IPA discharged from the central nozzle 55. As a result, a liquid film of IPA is formed covering the entire upper surface of the substrate W. When a predetermined time has elapsed since the replacement liquid valve 45 was opened, the replacement liquid valve 45 is closed and the discharge of IPA is stopped. After the liquid film of IPA is formed covering the entire upper surface of the substrate W, the substrate W may be rotated at a paddle speed (for example, a speed greater than 0 and equal to or less than 20 rpm) while the discharge of IPA from the central nozzle 55 is stopped.

[0163] Next, a sublimable substance-containing liquid supplying step (step S8 in FIG. 9) is performed in which the sublimable substance-containing liquid is supplied to the upper surface of the substrate W to form a liquid film of the sublimable substance-containing liquid covering the entire upper surface of the substrate W.

[0164] Specifically, in a state where the blocking member 51 is located at the lower position and at least one guard 24 is located at the upper position, the sublimable substance-containing liquid valve 41 is opened and the center nozzle 55 starts discharging the sublimable substance-containing liquid. Before discharging of the sublimable substance-containing liquid starts, the guard lifting unit 27 may vertically move at least one guard 24 to switch the guard 24 that receives the liquid discharged from the substrate W.

[0165] The sublimable substance-containing liquid discharged from the central nozzle 55 collides with the upper surface of the substrate W rotating at the sublimable substance supply speed, and then flows outward along the upper surface of the substrate W by centrifugal force. The IPA on the substrate W is replaced with the sublimable substance-containing liquid discharged from the central nozzle 55. This forms a liquid film of the sublimable substance-containing liquid covering the entire upper surface of the substrate W. When a predetermined time has elapsed since the sublimable substance-containing liquid valve 41 was opened, the sublimable substance-containing liquid valve 41 is closed, and the discharge of the sublimable substance-containing liquid is stopped.

[0166] Next, a film thickness reduction process (step S9 in FIG. 9) is performed in which a portion of the sublimable substance-containing liquid on the substrate W is removed, thereby reducing the film thickness (liquid film thickness) of the sublimable substance-containing liquid on the substrate W while maintaining the entire upper surface of the substrate W covered with a liquid film of the sublimable substance-containing liquid.

[0167] Specifically, with the blocking member 51 in the lower position, the spin motor 14 maintains the rotation speed of the substrate W at the film thickness reduction speed. The film thickness reduction speed may be equal to or different from the sublimable substance supply speed. The sublimable substance-containing liquid on the substrate W is discharged outward from the substrate W by centrifugal force even after the discharge of the sublimable substance-containing liquid is stopped. Therefore, the thickness of the liquid film of the sublimable substance-containing liquid on the substrate W decreases. When the sublimable substance-containing liquid on the substrate W is discharged to a certain extent, the discharge amount of the sublimable substance-containing liquid from the substrate W per unit time decreases to zero or approximately zero. As a result, the thickness of the liquid film of the sublimable substance-containing liquid on the substrate W is stabilized at a value according to the rotation speed of the substrate W.

[0168] Next, a solidified film forming step (step S10 in FIG. 9) is performed in which the solvent is evaporated from the sublimable substance-containing liquid on the substrate W to form a solidified film SF (see FIG. 10B) containing the sublimable substance on the substrate W.

[0169] Specifically, with the blocking member 51 in the lower position, the spin motor 14 maintains the rotation speed of the substrate W at the solidified film formation speed. The solidified film formation speed may be equal to or different from the sublimable material supply speed. Furthermore, the gas valve 57 is opened to start discharging nitrogen gas from the central nozzle 55. In addition to or instead of opening the gas valve 57, the opening of the flow rate control valve 65 may be changed to increase the flow rate of the nitrogen gas discharged from the central opening 61 of the blocking member 51.

[0170] When the rotation of the substrate W at the solidified film forming speed is started, the evaporation of the sublimable substance-containing liquid is promoted, and a part of the sublimable substance-containing liquid on the substrate W evaporates. Since the vapor pressure of the solvent is higher than the vapor pressure of the sublimable substance corresponding to the solute, the solvent evaporates at a higher evaporation rate than the evaporation rate of the sublimable substance. Therefore, the concentration of the sublimable substance gradually increases, while the film thickness of the sublimable substance-containing liquid gradually decreases. The freezing point of the sublimable substance-containing liquid increases with the increase in the concentration of the sublimable substance. When the freezing point of the sublimable substance-containing liquid coincides with the temperature of the sublimable substance-containing liquid, the sublimable substance-containing liquid begins to solidify, and a solidified film SF corresponding to the solidified body covering the entire upper surface of the substrate W is formed.

[0171] Next, a sublimation step (step S11 in FIG. 9) is performed in which the solidified film SF on the substrate W is sublimated and removed from the upper surface of the substrate W.

[0172] Specifically, with the blocking member 51 in the lower position, the spin motor 14 maintains the rotation speed of the substrate W at the sublimation speed. The sublimation speed may be equal to or different from the sublimable material supply speed. Furthermore, if the gas valve 57 is closed, the gas valve 57 is opened to start discharging nitrogen gas from the central nozzle 55. In addition to or instead of opening the gas valve 57, the opening of the flow rate control valve 65 may be changed to increase the flow rate of the nitrogen gas discharged from the central opening 61 of the blocking member 51.

[0173] When the rotation of the substrate W at the sublimation speed starts, the sublimation of the solidified film SF on the substrate W starts, and a gas containing a sublimable substance is generated from the solidified film SF on the substrate W. The gas (gas containing a sublimable substance) generated from the solidified film SF flows radially in the space between the substrate W and the blocking member 51, and is discharged from above the substrate W. After a certain amount of time has passed since the start of sublimation, all of the solidified film SF is removed from the substrate W.

[0174] Next, an organic matter removal step (step S12 in FIG. 9) is performed to remove the organic matter remaining on the substrate W after the solidified film SF has been removed from the substrate W.

[0175] Specifically, the heater moving unit 96 moves the heater 90, the inner nozzle 93, and the exhaust guide 94 from the standby position to the processing position. After that, the oxidizing gas valve 93vo is opened, and the inner nozzle 93 starts discharging the oxidizing gas. Furthermore, the light source 91 starts emitting light, and the suction force generator 95g starts generating suction force. The light source 91 may start emitting light at the same time that the inner nozzle 93 starts discharging the oxidizing gas, or may start emitting light before or after the inner nozzle 93 starts discharging the oxidizing gas. The same applies to the timing when the suction force generator 95g starts generating suction force. The timing when the light source 91 starts emitting light may be the same as the timing when the suction force generator 95g starts generating suction force, or may be different.

[0176] The oxidizing gas discharged from the inner nozzle 93 flows radially from a central opening 92op of the light source cover 92 between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W. The oxidizing gas is then sucked into a suction port 95i of the exhaust guide 94. The oxidizing gas between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W is heated by light from the light source 91. The heater moving unit 96 moves the heater 90 etc. horizontally while the spin motor 14 is rotating the substrate W at the organic matter removal speed. As a result, the oxidizing gas is supplied to the entire upper surface of the substrate W, and the organic matter is removed from the entire upper surface of the substrate W.

[0177] When a predetermined time has elapsed since the oxidizing gas valve 93vo was opened, the oxidizing gas valve 93vo is closed, and the inner nozzle 93 stops discharging the oxidizing gas. At the same time as, before, or after the oxidizing gas valve 93vo is closed, the inert gas valve 93vi is opened, and the inner nozzle 93 starts discharging the inert gas. The light source 91 may stop emitting light at the same time as the oxidizing gas valve 93vo is closed, or may stop emitting light before or after the oxidizing gas valve 93vo is closed. The light source 91 may stop emitting light after the inner nozzle 93 starts discharging the inert gas.

[0178] The oxidizing gas between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W is pushed outward by the inert gas discharged from the inner nozzle 93, and is also sucked into the suction port 95i of the exhaust guide 94. This causes the space between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W to be filled with inert gas. When a predetermined time has elapsed since the inert gas valve 93vi was opened, the inert gas valve 93vi is closed, and the inner nozzle 93 stops discharging the inert gas.

[0179] After the discharge of the inert gas is stopped, the spin motor 14 is stopped and the rotation of the substrate W is stopped (step S13 in FIG. 9). Simultaneously with, before or after the rotation of the substrate W is stopped, the heater moving unit 96 moves the heater 90, the inner nozzle 93 and the exhaust guide 94 from the processing position to the standby position in a state in which the light source 91 has stopped emitting light. The suction force generating device 95g may stop generating the suction force simultaneously with the discharge of the inert gas being stopped, or may stop generating the suction force before or after the discharge of the inert gas is stopped.

[0180] Next, an unloading step (step S14 in FIG. 9) of unloading the substrate W from the chamber 4 is performed.

[0181] Specifically, the blocking member lifting unit 54 lifts the blocking member 51 to the upper position, and the guard lifting unit 27 lowers all the guards 24 to the lower position. Furthermore, the gas valve 64 and the gas valve 84 are closed, and the central opening 61 of the blocking member 51 and the central opening 81 of the spin base 12 stop discharging nitrogen gas. Thereafter, the center robot CR causes the hand Hc to enter the chamber 4. After the multiple chuck pins 11 release the grip of the substrate W, the center robot CR supports the substrate W on the spin chuck 10 with the hand Hc. Thereafter, the center robot CR withdraws the hand Hc from inside the chamber 4 while supporting the substrate W with the hand Hc. As a result, the processed substrate W is carried out from the chamber 4.

[0182] Next, the organic matter removal step will be described in more detail.

[0183] 10A to 10E are schematic cross-sectional views of the substrate W. Fig. 11 is a schematic diagram showing a state in which the oxidizing gas is being sucked into the exhaust guide 94 while the oxidizing gas is being discharged from the inner nozzle 93. Fig. 12 is a schematic diagram showing a state in which, after the oxidizing gas is supplied to the substrate W, the inert gas is being sucked into the exhaust guide 94 while the inert gas is being discharged from the inner nozzle 93. In Figs. 11 and 12, a plurality of straight lines extending downward from the light source 91 represent light emitted by the light source 91.

[0184] 10A and 10B, in the solidified film forming step (step S10 in FIG. 9), the sublimable substance-containing liquid on the substrate W is transformed into a solidified film SF. As shown in FIG. 10B and 10C, in the sublimation step (step S11 in FIG. 9), the solidified film SF is removed from the substrate W by sublimation of the solidified film SF.

[0185] As shown in Fig. 10C, organic matter may remain on the substrate W after the solidified film SF is removed from the substrate W. The black circles in Fig. 10C and Fig. 10D represent organic matter. The circles in Fig. 10C and Fig. 10D merely show images of the organic matter, and the shapes, etc. of the actual organic matter do not necessarily match the shapes, etc. of the organic matter shown in Fig. 10C and Fig. 10D.

[0186] The organic matter remaining after removing the solidified film SF is a substance generated from the solidified film SF. The organic matter may be a sublimable substance that has not been sublimated, or a substance that has been altered from a sublimable substance. The organic matter may be a substance derived from a sublimable substance, or a substance unrelated to a sublimable substance. The organic matter may be a substance that has sublimability, or a substance that does not have sublimability.

[0187] Fig. 10E shows the substrate W after removal of organic residues, etc. In the organic matter removal step (step S12 in Fig. 9), the organic matter as described above is removed from the substrate W, thereby changing the substrate W from the state shown in Fig. 10D to the state shown in Fig. 10E.

[0188] Specifically, in the organic substance removal step (step S12 in FIG. 9), as shown in FIG. 11, the heater moving unit 96 places the heater 90, the inner nozzle 93, and the exhaust guide 94 above the substrate W. As a result, the lower surface 92sL of the light source cover 92 directly faces the upper surface of the substrate W in the vertical direction. At this time, the lower surface 92sL of the light source cover 92 approaches the upper surface of the substrate W to a distance where a scan nozzle such as the first chemical liquid nozzle 31a cannot enter between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W. The vertical distance from the lower surface 92sL of the light source cover 92 to the upper surface of the substrate W may be equal to or greater than the radius of the lower surface 92sL of the light source cover 92, or may be less than the radius of the lower surface 92sL of the light source cover 92.

[0189] The inner nozzle 93 discharges the oxidizing gas with the lower surface 92sL of the light source cover 92 facing the upper surface of the substrate W. The oxidizing gas discharged from the inner nozzle 93 flows radially from a central opening 92op of the light source cover 92 between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W. The oxidizing gas is then sucked into the suction port 95i of the exhaust guide 94. The flow rate of the gas sucked into the suction port 95i is defined as the exhaust flow rate, and the flow rate of the gas discharged from the inner nozzle 93 is defined as the supply flow rate. The exhaust flow rate and the supply flow rate are set so that the exhaust flow rate exceeds the supply flow rate. Therefore, the oxidizing gas can be brought into contact with the upper surface of the substrate W while preventing the oxidizing gas from diffusing outside the suction port 95i.

[0190] The oxidizing gas discharged from the inner nozzle 93 comes into contact with the covered region of the substrate W, that is, the region of the upper surface of the substrate W that overlaps with the lower surface 92sL of the light source cover 92 in a plan view. The organic matter in the covered region is oxidized by the oxidizing gas and turns into gas. The vaporized organic matter flows toward the suction port 95i together with the oxidizing gas and is sucked into the suction port 95i. This makes it possible to remove the organic matter from the covered region while preventing the organic matter from adhering to the substrate W again. In addition, since the suction port 95i is disposed near the position where the organic matter is vaporized, the vaporized organic matter can be immediately removed from the substrate W.

[0191] The light source 91 emits light in a state where the space between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W is filled with oxidizing gas. As a result, the covered area of ​​the substrate W (the area of ​​the upper surface of the substrate W that overlaps with the lower surface 92sL of the light source cover 92 in a plan view) is heated by the light from the light source 91. The light source cover 92 is also heated by the light from the light source 91. The oxidizing gas between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W is heated by the light from the light source 91, and is also heated by the substrate W and the light source cover 92. Furthermore, the oxidizing gas is heated by a gas heater 93h before being supplied to the inner nozzle 93.

[0192] The temperature of the light source 91 when heating the substrate W and the oxidizing gas is 200 to 300° C. The temperature of the light source 91 may be higher than 300° C. The temperature of the light source 91 may be lower than 200° C. as long as it is a value higher than room temperature. The gas heater 93h heats the oxidizing gas to a temperature higher than room temperature. The temperature of the gas heater 93h when heating the oxidizing gas may be equal to or different from the temperature of the light source 91.

[0193] When the temperature of the oxidizing gas increases, the activity of the oxidizing gas also increases. This can promote the reaction between the oxidizing gas and the organic matter, and the organic matter remaining in the coating region can be removed efficiently and effectively. In other words, the amount of organic matter vaporized by the oxidizing gas can be increased, and the time it takes for the organic matter to vaporize can be shortened. Furthermore, even if a sublimable substance remains on the substrate W, the sublimable substance is heated by the light source 91 and sublimated. The vaporized sublimable substance is sucked into the suction port 95i of the exhaust guide 94. Therefore, residues other than organic matter can also be removed from the substrate W after drying.

[0194] In the organic matter removal step (step S12 in FIG. 9), the control device 3 rotates the substrate W using the spin chuck 10 (see FIG. 2) and causes the heater moving unit 96 to move the heater 90 and other components horizontally while discharging the oxidizing gas from the inner nozzle 93, emitting light from the light source 91, and exhausting air using the exhaust guide 94, as described above. The rotation of the substrate W and the movement of the heater 90 and other components cause the covered area to pass over the entire upper surface of the substrate W. This makes it possible to supply the oxidizing gas to the entire upper surface of the substrate W while limiting the range in which the oxidizing gas diffuses to the area between the light source cover 92 and the substrate W. As a result, it is possible to remove organic matter from the entire upper surface of the substrate W while preventing the oxidizing gas from coming into contact with members other than the heater 90 and other components.

[0195] The control device 3 may move the heater 90 and the like in any manner as long as the coverage area passes over the entire upper surface of the substrate W. For example, the control device 3 may move the heater 90 and the like horizontally between a center processing position where the heater 90 overlaps with the center of the substrate W held by the spin chuck 10 in a plan view and an edge processing position where the heater 90 overlaps with the outer periphery of the substrate W held by the spin chuck 10 in a plan view (half scan). Alternatively, the control device 3 may move the heater 90 and the like horizontally between two edge processing positions where the heater 90 overlaps with the outer periphery of the substrate W held by the spin chuck 10 in a plan view (full scan).

[0196] The speed at which the heater 90, etc. moves horizontally may be constant throughout the entire section in which the heater 90, etc. moves, or may increase or decrease stepwise or continuously as the distance from the rotation axis A1 (see FIG. 2) of the substrate W to the heater 90, etc. increases. In the latter case, the movement speed of the heater 90, etc. may change only in some sections. The rotation speed of the substrate W may be constant regardless of the distance from the rotation axis A1 of the substrate W to the heater 90, etc., or may increase or decrease stepwise or continuously as the distance from the rotation axis A1 of the substrate W to the heater 90, etc. increases.

[0197] When the rotation speed of the substrate W is constant, as the heater 90 approaches the outer periphery of the substrate W, the movement speed of the covered region of the substrate W relative to the heater 90 (the region of the upper surface of the substrate W that overlaps with the lower surface 92sL of the light source cover 92 in a plan view) increases. Therefore, as the heater 90 approaches the outer periphery of the substrate W, the gas between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W receives a greater force from the substrate W. In order to further reduce the oxidizing gas that reaches the outside of the suction port 95i, the rotation speed of the substrate W may be decreased as the heater 90 approaches the outer periphery of the substrate W.

[0198] As the heater 90 approaches the outer periphery of the substrate W, the heater 90 approaches the upstream end of the exhaust duct 8 (see FIG. 2). Therefore, the exhaust flow rate (the flow rate of gas sucked into the suction port 95i) may be increased as the heater 90 approaches the outer periphery of the substrate W. In addition to or instead of this, the opening degree of the exhaust valve 9 (see FIG. 2) arranged in the exhaust duct 8 may be decreased as the heater 90 approaches the outer periphery of the substrate W. In this way, the oxidizing gas that reaches the outside of the suction port 95i can be further reduced.

[0199] The speed at which the heater 90 etc. moves horizontally may be equal to or different from the speed at which a scan nozzle such as first chemical liquid nozzle 31a (see FIG. 2) moves horizontally. The rotation speed of the substrate W in the organic substance removal process (step S12 in FIG. 9) may be equal to or different from the rotation speed of the substrate W in processes other than the organic substance removal process (step S12 in FIG. 9). When the speed at which the heater 90 etc. moves horizontally, the speed at which the scan nozzle moves horizontally, or the rotation speed of the substrate W changes during one process, the minimum, maximum, or average value of each speed may be compared.

[0200] Next, the effects of this embodiment will be described.

[0201] In this embodiment, an oxidizing gas that oxidizes and vaporizes organic matter is discharged from the inner nozzle 93. The oxidizing gas flows radially between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W from a central opening 92op formed by the inner periphery of the lower surface 92sL of the light source cover 92. The light of the light source 91 is irradiated onto the substrate W through the lower surface 92sL of the light source cover 92. This heats the substrate W. The oxidizing gas between the light source cover 92 and the substrate W is also heated by the light of the light source 91. This allows the heated oxidizing gas to be supplied to the substrate W.

[0202] The oxidizing gas flowing radially from the central opening 92op of the light source cover 92 along the substrate W is sucked into the suction port 95i of the exhaust guide 94. Organic matter that has been oxidized and vaporized by reaction with the oxidizing gas is also sucked into the suction port 95i of the exhaust guide 94. The suction port 95i is endless and surrounds the central axis CL of the light source cover 92 outside the central opening 92op of the light source cover 92. Therefore, the oxidizing gas and organic matter are sucked into the exhaust guide 94 around the entire circumference or almost the entire circumference of the light source cover 92. This makes it possible to narrow the range in which the oxidizing gas diffuses and to remove the vaporized organic matter from the substrate W.

[0203] In this embodiment, an outer peripheral wall 92o of the light source cover 92 surrounds the light source 91, and an exhaust guide 94 surrounds the entire periphery of the outer peripheral wall 92o without contacting the outer peripheral wall 92o. Light from the light source 91 also heats the outer peripheral wall 92o of the light source cover 92. Because the exhaust guide 94 is separated from the outer peripheral wall 92o, the amount of heat transferred from the light source cover 92 to the exhaust guide 94 can be reduced, and the rise in temperature of the exhaust guide 94 can be reduced. This allows the substrate W and oxidizing gas to be heated by the light source 91 while maintaining the exhaust guide 94 at or below the heat resistance temperature of the exhaust guide 94 (the maximum temperature at which deformation and deterioration do not occur).

[0204] In this embodiment, the top wall 92t of the light source cover 92, which protrudes inward from the outer peripheral wall 92o of the light source cover 92, is supported by the support arm 96ar. Furthermore, the flange 94f of the exhaust guide 94, which protrudes outward from the exhaust ring 94r of the exhaust guide 94, is supported by the support arm 96ar. Although at least a part of the flange 94f is disposed at the same height as the top wall 92t, the flange 94f and the top wall 92t protrude on opposite sides to the exhaust ring 94r and the outer peripheral wall 92o, even if the exhaust ring 94r is brought closer to the outer peripheral wall 92o of the light source cover 92, the flange 94f does not come into contact with the top wall 92t. Therefore, compared to the case where the top wall 92t of the light source cover 92 protrudes outward from the outer peripheral wall 92o of the light source cover 92, the exhaust guide 94 can be brought closer to the light source cover 92, and the exhaust guide 94 can be made smaller. By making the exhaust guide 94 smaller, the range in which the oxidizing gas diffuses can be further narrowed.

[0205] In this embodiment, the gas sucked into the suction port 95i of the exhaust guide 94 is guided to the exhaust port 95o of the exhaust guide 94 through the internal flow path 95f of the exhaust guide 94, and is exhausted from the exhaust port 95o to the outside of the exhaust guide 94. The internal flow path 95f of the exhaust guide 94 includes a plurality of second linear flow paths 95Lb, a second cylindrical flow path 95tb, a plurality of first linear flow paths 95La, and a first cylindrical flow path 95ta. The gas sucked into the suction port 95i passes through the plurality of second linear flow paths 95Lb, the second cylindrical flow path 95tb, the plurality of first linear flow paths 95La, and the first cylindrical flow path 95ta in this order, and is exhausted from the exhaust port 95o.

[0206] The first linear flow paths 95La are arranged on a cylindrical surface surrounding the central axis CL of the light source cover 92. The second linear flow paths 95Lb are also arranged on the same cylindrical surface. The first linear flow paths 95La and the second linear flow paths 95Lb are arranged on opposite sides of each other with respect to the second cylindrical flow path 95tb. When viewed in a direction parallel to the central axis CL of the light source cover 92, at least one of the first linear flow paths 95La does not overlap any of the second linear flow paths 95Lb. Therefore, the suction force that draws gas into the suction port 95i is distributed in the circumferential direction Dc of the light source cover 92 by the second cylindrical flow path 95tb. This allows the gas to be uniformly drawn from the suction port 95i.

[0207] In this embodiment, the oxidizing gas is heated by the gas heater 93h and then supplied to the inner nozzle 93. The inner nozzle 93 discharges the oxidizing gas heated by the gas heater 93h, and the light source 91 heats the oxidizing gas discharged from the inner nozzle 93. This makes it possible to shorten the time it takes for the temperature of the oxidizing gas discharged from the inner nozzle 93 to reach a certain value. Since the oxidizing gas is heated by both the gas heater 93h and the light source 91, the light source 91 can be made smaller without lowering the temperature of the oxidizing gas in contact with the substrate W. By making the light source 91 smaller, the exhaust guide 94 can be made smaller, and the range in which the oxidizing gas diffuses can be further narrowed.

[0208] In this embodiment, at least one of an oxidizing gas and an inert gas is discharged to the inner nozzle 93. The oxidizing gas is a gas containing an oxidizing substance that oxidizes organic matter. If a mixed gas of the oxidizing gas and the inert gas is discharged to the inner nozzle 93, the concentration of the oxidizing substance in the gas discharged from the inner nozzle 93 can be reduced. If only the oxidizing gas is discharged to the inner nozzle 93, the concentration of the oxidizing substance can be increased. This makes it possible to adjust the concentration of the oxidizing substance in the gas discharged from the inner nozzle 93.

[0209] In this embodiment, oxidizing gas is discharged from the inner nozzle 93. Then, while the exhaust guide 94 is sucking in the gas, an inert gas is discharged from the inner nozzle 93. The oxidizing gas between the light source cover 92 and the substrate W is pushed outward by the inert gas discharged from the inner nozzle 93, and is also sucked into the exhaust guide 94. This makes it possible to reliably and quickly remove the oxidizing gas remaining between the light source cover 92 and the substrate W after the discharge of the oxidizing gas is stopped.

[0210] In this embodiment, a sublimable substance-containing liquid containing a sublimable substance is discharged from a central nozzle 55, which is an example of a sublimable substance-containing liquid nozzle, and supplied to the substrate W. The central nozzle 55, which is also an example of a gas nozzle, discharges gas toward the substrate W to which the sublimable substance-containing liquid has been supplied. The spin motor 14 rotates the substrate W to which the sublimable substance-containing liquid has been supplied. When the substrate W rotates, an air flow that flows along the substrate W is formed.

[0211] The evaporation of the solvent contained in the sublimable substance-containing liquid is promoted by the airflow formed by at least one of the central nozzle 55 and the spin motor 14. The temperature of the sublimable substance-containing liquid is lowered by the airflow formed by at least one of the central nozzle 55 and the spin motor 14. The sublimable substance is precipitated by the evaporation of the solvent, and a solidified film SF containing the sublimable substance is formed on the substrate W. Alternatively, the sublimable substance-containing liquid is solidified by the lowering of the temperature of the sublimable substance-containing liquid, and a solidified film SF containing the sublimable substance is formed on the substrate W. The airflow formed by at least one of the central nozzle 55 and the spin motor 14 causes the solidified film SF to sublimate. As a result, the solidified film SF is removed from the substrate W.

[0212] The solidified film SF may contain unnecessary organic matter. After the solidified film SF is removed from the substrate W, the unnecessary organic matter may remain on the substrate W. In such cases, if the light source 91 is made to emit light while the inner nozzle 93 is made to discharge an oxidizing gas at least during or after the removal of the solidified film SF, the organic matter can be oxidized and vaporized. In addition, if the vaporized organic matter is sucked into the exhaust guide 94, the range in which the oxidizing gas diffuses can be narrowed and the vaporized organic matter can be removed from the substrate W.

[0213] In this embodiment, the solidified film SF containing a sublimable substance is removed from the substrate W. Thereafter, the control device 3 causes the inner nozzle 93 to start discharging the oxidizing gas. The oxidizing gas discharged from the inner nozzle 93 reacts with unnecessary organic matter remaining on the substrate W after the solidified film SF has been removed, and vaporizes the organic matter. Since the inner nozzle 93 starts discharging the oxidizing gas after the solidified film SF has been removed, control of the substrate processing apparatus 1 can be simplified compared to the case where the inner nozzle 93 starts discharging the oxidizing gas while the solidified film SF is being removed (while the solidified film SF remains on the substrate W).

[0214] Next, another embodiment will be described.

[0215] The supply of the oxidizing gas to the substrate W may be started when the solidified film SF is being removed (while the solidified film SF remains on the substrate W), or may be started after the solidified film SF is formed and before the removal of the solidified film SF begins. In this case, in order to ensure a space for arranging the heater 90 or the like between the blocking member 51 and the substrate W, the sublimation step (step S11 in FIG. 9) may be performed with the blocking member 51 located in the upper position.

[0216] It is possible to omit the inert gas pipe 93pi that guides the inert gas to the inner nozzle 93. In addition to or instead of this, the inert gas discharged from a nozzle other than the inner nozzle 93 may be supplied between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W.

[0217] The sublimable substance-containing liquid may be discharged from a nozzle other than the central nozzle 55. Similarly, the replacement liquid may be discharged from a nozzle other than the central nozzle 55. The nozzle that discharges the sublimable substance-containing liquid may be a scan nozzle or a fixed nozzle. The same applies to the nozzle that discharges the replacement liquid. The nozzle that discharges the sublimable substance-containing liquid may be a nozzle different from the nozzle that discharges the replacement liquid.

[0218] When performing the solidified film forming step (step S10 in FIG. 9), in addition to or instead of the outlet of the central nozzle 55 and the central opening 61 of the blocking member 51, an inert gas such as nitrogen gas may be discharged toward the upper surface of the substrate W from an outlet other than the outlet of the central nozzle 55 and the central opening 61 of the blocking member 51. The same applies when performing the sublimation step (step S11 in FIG. 9).

[0219] For example, an inert gas may be discharged from a scan nozzle toward the upper surface of the substrate W. In this case, the collision position where the inert gas discharged from the scan nozzle first collides with the upper surface of the substrate W may be fixed at the center of the substrate W, or the collision position may be moved. The central nozzle 55 is an example of a gas nozzle. The central opening 61 of the blocking member 51 is another example of a gas nozzle.

[0220] When the suction port 95i is an endless suction port, the third cylindrical passage 95tc and the second linear passage 95Lb may be omitted from the internal passage 95f of the exhaust guide 94. In this case, the lower end (upstream end) of the second cylindrical passage 95tb corresponds to the endless suction port.

[0221] The suction port 95i may be a plurality of divided suction ports arranged in an annular shape so as to surround the central axis CL of the light source cover 92 outside the central opening 92op of the light source cover 92. For example, the third cylindrical flow path 95tc (see FIG. 7B) may be omitted from the exhaust guide 94. In this case, the lower end (upstream end) of the second linear flow path 95Lb corresponds to the divided suction port.

[0222] The divided suction port may be circular or arc-shaped extending in the circumferential direction Dc of the light source cover 92. The divided suction ports may include a circular divided suction port and an arc-shaped divided suction port. In either case, the oxidizing gas and organic matter are sucked into the exhaust guide 94 all or almost all around the light source cover 92.

[0223] When the suction port 95i is a plurality of divided suction ports, the exhaust guide 94 may include a plurality of exhaust nozzles arranged at intervals in the circumferential direction Dc of the light source cover 92, instead of the exhaust ring 94r, the flange 94f, and the exhaust tube 94t. In this case, one or more divided suction ports are provided for each exhaust nozzle. The suction force of the suction force generator 95g may be transmitted to all exhaust nozzles or a plurality of exhaust nozzles, or one suction force generator 95g may be provided for each exhaust nozzle.

[0224] The light source cover 92 may be sized so that, in a plan view, the light source cover 92 overlaps the entire substrate W. In this case, it is not necessary to move the heater 90 and the like horizontally relative to the substrate W when removing organic matter from the substrate W.

[0225] The top wall 92t of the light source cover 92 may protrude outward from the outer peripheral wall 92o of the light source cover 92. Additionally or alternatively, the flange 94f of the exhaust guide 94 may protrude inward from the exhaust ring 94r of the exhaust guide 94. If the light source cover 92 can be supported by the support arm 96ar, the top wall 92t of the light source cover 92 may be omitted. Similarly, if the exhaust guide 94 can be supported by the support arm 96ar, the flange 94f of the exhaust guide 94 may be omitted.

[0226] While the oxidizing gas is being supplied to the substrate W, the substrate W held by the spin chuck 10 may be heated from the side opposite to the light source 91. For example, a heating fluid having a temperature higher than room temperature may be discharged toward the lower surface of the substrate W, or a heater may be disposed below the substrate W. In the former case, the heating fluid may be discharged from the discharge port of the lower surface nozzle 71 or the central opening 81 of the spin base 12. In the latter case, a heater may be disposed between the upper surface 12u of the spin base 12 and the lower surface of the substrate W, or a heater may be disposed within the spin base 12.

[0227] Organic matter may be removed from the lower surface of the substrate W, rather than from the upper surface of the substrate W. Alternatively, organic matter may be removed from both the upper and lower surfaces of the substrate W. When removing organic matter from the lower surface of the substrate W, a heater 90 or the like may be disposed below the substrate W.

[0228] Organic matter generated when a processing liquid other than the sublimable substance-containing liquid is supplied may be removed from the substrate W. Organic matter may be removed from the substrate W in a chamber different from the chamber in which the processing liquid is supplied to the substrate W. In other words, organic matter may be removed from the substrate W held by a substrate holder different from the substrate holder that holds the substrate W when the processing liquid is supplied to the substrate W.

[0229] The substrate processing apparatus 1 is not limited to an apparatus for processing a disk-shaped substrate W, but may be an apparatus for processing a polygonal substrate W.

[0230] Any two or more of the above mentioned features may be combined. Any two or more of the above mentioned steps may be combined.

[0231] Although the embodiments of the present invention have been described in detail, these are merely examples used to clarify the technical contents of the present invention, and the present invention should not be construed as being limited to these examples. The spirit and scope of the present invention are limited only by the appended claims. [Explanation of symbols]

[0232] 1: substrate processing apparatus, 3: control device, 10: spin chuck, 11: chuck pin, 14: spin motor, 40: sublimable substance-containing liquid pipe, 41: sublimable substance-containing liquid valve, 55: center nozzle, 56: gas pipe, 57: gas valve, 58: flow rate control valve, 59: heater, 61: central opening, 62: gas flow path, 63: gas pipe, 64: gas valve, 65: flow rate control valve, 66: heater, 71: bottom nozzle, 72: heating fluid pipe, 73: heating fluid valve, 74: flow rate control valve, 75: heater, 81: central opening, 82: gas flow path, 83 : Gas piping, 84: Gas valve, 85: Flow rate adjustment valve, 86: Heater, 90: Heater, 91: Light source, 91h: Heat sink, 91p: Arc tube, 91r: Reflector, 92: Light source cover, 92b: Bottom wall, 92ci: Inner circumference, 92co: Outer circumference, 92i: Inner circumference wall, 92o: Outer circumference wall, 92op: Central opening, 92sL: Lower surface, 92si: Inner circumference surface, 92so: Outer circumference surface, 92su: Upper surface, 92t: Top wall, 93: Inner nozzle, 93d: Discharge port, 93f: Internal flow path, 93fi: Flow rate adjustment valve, 93fo: Flow rate adjustment valve, 93h: Gas heater -, 93pi: inert gas piping, 93po: oxidizing gas piping, 93vi: inert gas valve, 93vo: oxidizing gas valve, 94: exhaust guide, 94f: flange, 94r: exhaust ring, 94sL: lower surface, 94si: inner peripheral surface, 94so: outer peripheral surface, 94su: upper surface, 94t: exhaust tube, 95La: first linear flow path, 95Lb: second linear flow path, 95d: downstream flow path, 95f: internal flow path, 95g: suction force generator, 95i: suction port, 95o: exhaust port, 95p: exhaust piping, 95ta: first cylindrical flow path, 95tb: second cylindrical flow path, 95tc: third cylindrical flow path , 96: heater moving unit, 96ac: drive actuator, 96ar: support arm, 96bL: lower bracket, 96bs: support bracket, 96bu: upper bracket, 96c: ring cover, 96h: head, 96i: inner ring, 96r: ring, 96s: shaft, 96si: seal ring, 96so: seal ring, A1: rotation axis, A2: rotation axis, B1: bolt, B2: bolt, B3: bolt, CL: central axis of light source cover, Da: axial direction, Dc: circumferential direction, Dr: radial direction, SF: solidified film, W: substrate

Claims

1. A substrate holder for holding a substrate; a light source cover including an opposing surface facing the substrate held by the substrate holder and a central opening formed by an inner periphery of the opposing surface surrounding a central axis passing through a center of the substrate; an inner nozzle that ejects an oxidizing gas that oxidizes and vaporizes organic matter toward the substrate held by the substrate holder, thereby forming a flow of the oxidizing gas that flows radially from the central opening between the facing surface and the substrate; a light source that irradiates the substrate held by the substrate holder with light through the facing surface to heat the substrate and the oxidizing gas; an exhaust guide including an endless suction port surrounding the central axis outside the central opening, or a plurality of divided suction ports arranged in a ring shape so as to surround the central axis outside the central opening, and which sucks in gas flowing radially from the central opening along the substrate through the endless suction port or the plurality of divided suction ports.

2. The light source cover further includes an outer peripheral wall surrounding the light source, The substrate processing apparatus according to claim 1 , wherein the exhaust guide surrounds the entire periphery of the outer periphery wall without contacting the outer periphery wall.

3. The light source cover further includes a top wall protruding inward from the outer peripheral wall, the exhaust guide includes an exhaust ring that surrounds the entire outer circumferential wall without contacting the outer circumferential wall, and a flange that protrudes outward from the exhaust ring, The substrate processing apparatus further includes a support arm for supporting the top wall and the flange. The substrate processing apparatus of claim 2 , wherein at least a portion of the flange is disposed below an upper end of the top wall and above a lower end of the top wall.

4. The exhaust guide further includes an exhaust port that opens on a surface of the exhaust guide, and an internal flow path that guides gas from the endless suction port or the multiple divided suction ports to the exhaust port, the internal flow path includes a first cylindrical flow path surrounding the central axis on a cylindrical surface surrounding the central axis, a second cylindrical flow path surrounding the central axis on the cylindrical surface, a plurality of first linear flow paths extending from the first cylindrical flow path to the second cylindrical flow path, and a plurality of second linear flow paths extending from the second cylindrical flow path toward the endless suction port or the plurality of divided suction ports on an opposite side to the plurality of first linear flow paths, 4. The substrate processing apparatus according to claim 1, wherein the plurality of first linear flow paths and the plurality of second linear flow paths are arranged on the cylindrical surface such that at least one of the plurality of first linear flow paths does not overlap any of the plurality of second linear flow paths when viewed in a direction parallel to the central axis.

5. 4. The substrate processing apparatus according to claim 1, further comprising a gas heater that heats the oxidizing gas before it is supplied to the inner nozzle.

6. an oxidizing gas pipe that guides the oxidizing gas to be discharged from the inner nozzle; an inert gas pipe for guiding the inert gas to be discharged from the inner nozzle; an oxidizing gas valve that switches between an open state that passes the oxidizing gas flowing through the oxidizing gas pipe toward the inner nozzle and a closed state that stops the oxidizing gas flowing through the oxidizing gas pipe toward the inner nozzle; The substrate processing apparatus of any one of claims 1 to 3, further comprising an inert gas valve that switches between an open state that allows the inert gas to pass through the inert gas piping toward the inner nozzle and a closed state that stops the inert gas from flowing through the inert gas piping toward the inner nozzle.

7. 7. The substrate processing apparatus of claim 6, further comprising a control device that switches the oxidizing gas valve from the open state to the closed state while causing the exhaust guide to suck in gas, and then switches the inert gas valve from the closed state to the open state while causing the exhaust guide to suck in gas.

8. a sublimable substance-containing liquid nozzle that ejects a sublimable substance-containing liquid toward the substrate held by the substrate holder; a gas nozzle that ejects gas toward the substrate held by the substrate holder; The substrate processing apparatus of any one of claims 1 to 3, further comprising a spin motor that rotates the substrate held by the substrate holder by rotating the substrate holder around a rotation axis passing through a center of the substrate held by the substrate holder.

9. 9. The substrate processing apparatus according to claim 8, further comprising a control device that starts ejection of the oxidizing gas from the inner nozzle after a solidified film containing the sublimable substance contained in the sublimable substance-containing liquid is removed from the substrate.

10. an oxidizing gas supplying step of discharging an oxidizing gas, which oxidizes and vaporizes organic matter, from an inner nozzle toward a substrate held by a substrate holder, thereby forming a flow of the oxidizing gas flowing radially from a central opening formed by the inner circumference of the opposing surface surrounding a central axis passing through the center of the substrate, between the opposing surface and the substrate; a light emission step of irradiating the substrate held by the substrate holder with light from a light source through the facing surface while discharging the oxidizing gas from the inner nozzle, thereby heating the substrate and the oxidizing gas; an exhaust step of causing an endless suction port surrounding the central axis outside the central opening, or a plurality of divided suction ports arranged in a ring shape so as to surround the central axis outside the central opening, to suck in the oxidizing gas flowing radially from the central opening along the substrate, while discharging the oxidizing gas from the inner nozzle, thereby guiding the oxidizing gas to an exhaust guide provided with the endless suction port or a plurality of divided suction ports.

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