Sensor element structure, solid-state quantum sensor module, and sensor device

Abstract

To provide a sensor element structure including a solid-state element having a color center and capable of improving the intensity of emitted photoluminescence.SOLUTION: A sensor element structure includes a first optical functional layer, a solid-state element having a color center, and a second optical functional layer in this order in a thickness direction. The solid-state element excites the color center from a ground state to an excited state by excitation light including light of a first wavelength, emits photoluminescence including light of a second wavelength, and has a cavity structure having a plurality of element portions isolated from each other by grooves extending in the thickness direction. The first optical functional layer reflects light of the second wavelength. The second optical functional layer transmits and reflects light of the second wavelength.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a sensor element structure, a solid-state quantum sensor module and a sensor device. [Background technology]

[0002] In the crystal structure of diamond, a complex defect (NV center (Nitrogen Vacancy center)) consisting of a pair of a nitrogen atom that replaces the carbon atom in the crystal lattice and a vacancy that exists in a position adjacent to the nitrogen atom is known. In addition to the NV center, complex defects called silicon-vacancy centers (SiV centers) and tin-vacancy centers (SnV centers) are known to exist in the crystal structure of diamond, and these complex defects including the NV center are called color centers.

[0003] The NV center is in a state where an electron is trapped (hereafter referred to as NV - In the NV system, a state called a spin triplet is formed and behaves as a single spin. - The single spin of the NV center changes in response to an external magnetic field, and this spin state can be measured even at room temperature. Therefore, diamond containing the NV center can be used as a material for magnetic field sensor devices, electric field sensor devices, and the like.

[0004] Patent Document 1 discloses a magnetometer including a substrate, an electron spin defect layer including a plurality of lattice point defects arranged on the substrate, a microwave field transmitter, a light source, an optical resonator cavity including at least a portion of the electron spin defect layer and arranged to recirculate the light passing through the electron spin defect layer, a photodetector that detects photoluminescence emitted from the electron spin defect layer, and a magnet arranged adjacent to the electron spin defect layer. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Special Publication No. 2022-550046 Summary of the Invention [Problem to be solved by the invention]

[0006] Sensor devices using solid-state elements, such as diamond elements containing NV centers, are required to have high sensitivity sensing performance, and therefore there is a demand for improving the intensity of photoluminescence emitted by the solid-state elements.

[0007] The present disclosure has been made in consideration of the above circumstances, and has as its main object to provide a sensor element structure including a solid-state element having a color center, which is capable of improving the intensity of emitted photoluminescence. [Means for solving the problem]

[0008] One embodiment of the present disclosure provides a sensor element structure comprising a first optical functional layer, a solid-state element having a color center, and a second optical functional layer, in that order in a thickness direction, wherein the solid-state element excites the color center from a ground state to an excited state by excitation light including light of a first wavelength and emits photoluminescence including light of a second wavelength, and has a cavity structure having a plurality of element portions isolated from each other by grooves extending in the thickness direction, wherein the first optical functional layer reflects light of the second wavelength, and the second optical functional layer transmits and reflects light of the second wavelength.

[0009] Another embodiment of the present disclosure provides a solid-state quantum sensor module including: a substrate having a first main surface and a second main surface located opposite to the first main surface; the above-mentioned sensor element structure located on the first main surface side of the substrate; a light guide plate located between the substrate and the sensor element structure; a microwave field transmitting antenna located on the substrate side of the sensor element structure; a light source located on the first main surface side of the substrate, emitting excitation light including light of the first wavelength toward the light guide plate; and a photodetector located on the first main surface side of the substrate, detecting photoluminescence including light of the second wavelength, wherein the sensor element structure is located such that the first optical functional layer is on the substrate side.

[0010] Another embodiment of the present disclosure provides a sensor device comprising the solid-state quantum sensor module described above. Effect of the Invention

[0011] The present disclosure provides a sensor element structure including a solid-state element having a color center, which can improve the intensity of emitted photoluminescence, thereby providing a sensor device that enables highly sensitive sensing. [Brief description of the drawings]

[0012] [Figure 1] 1A and 1B are a schematic top view and a schematic cross-sectional view showing an example of a sensor element structure according to the present disclosure. [Diagram 2] FIG. 1 is a diagram showing a schematic structure of a diamond element having an NV center. [Diagram 3] FIG. 1 is a diagram for explaining the principle of a diamond quantum sensor. [Figure 4] This is an optically detected magnetic resonance spectrum obtained with a diamond quantum sensor. [Diagram 5] 1 is a schematic cross-sectional view showing an example of a sensor element structure according to the present disclosure. [Figure 6] 1 is a schematic cross-sectional view showing an example of a sensor element structure according to the present disclosure. [Figure 7]1 is a schematic cross-sectional view illustrating a solid-state quantum sensor module according to a first embodiment of the present disclosure. [Figure 8] 1 is a schematic top view illustrating a solid-state quantum sensor module according to a first embodiment of the present disclosure. FIG. [Figure 9] 1 is a schematic cross-sectional view illustrating a solid-state quantum sensor module according to a first embodiment of the present disclosure. [Figure 10] 1 is a schematic top view illustrating a solid-state quantum sensor module according to a first embodiment of the present disclosure. FIG. [Figure 11] 1A to 1C are a schematic cross-sectional view, an exploded view, and a schematic top view of a light guide plate and a substrate illustrating a solid-state quantum sensor module in a first embodiment of the present disclosure. [Figure 12] 11A and 11B are a schematic cross-sectional view and an exploded cross-sectional view illustrating a solid-state quantum sensor module according to a second embodiment of the present disclosure. [Figure 13] FIG. 11 is a schematic cross-sectional view illustrating a solid-state quantum sensor module according to a second embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] The following describes the embodiments of the present disclosure with reference to the drawings. However, the present disclosure can be implemented in many different forms, and should not be interpreted as being limited to the description of the embodiments exemplified below. In addition, the drawings may be schematic in terms of the width, thickness, shape, etc. of each part compared to the actual form in order to make the explanation clearer, but these are merely examples and do not limit the interpretation of the present disclosure. In this specification and each figure, elements similar to those described above with respect to the previous figures may be given the same reference numerals, and detailed explanations may be omitted as appropriate.

[0014] In this specification, when describing a mode in which another component is disposed on a certain component, the term "above" or "below" is used, unless otherwise specified, to include both a case in which another component is disposed directly above or below a certain component so as to be in contact with the component, and a case in which another component is disposed above or below a certain component with another component interposed therebetween. Also, in this specification, when describing a mode in which another component is disposed on the surface of a certain component, the term "on the surface side" or "on the surface" is used, unless otherwise specified, to include both a case in which another component is disposed directly above or below a certain component so as to be in contact with the component, and a case in which another component is disposed above or below a certain component with another component interposed therebetween.

[0015] A. Sensor element structure Fig. 1(a) is a schematic top view showing an example of a sensor element structure in the present disclosure, and Fig. 1(b) is a schematic cross-sectional view taken along the line AA in Fig. 1(a). As shown in Fig. 1(a) and Fig. 1(b), the sensor element structure 1 of the present disclosure includes a first optical functional layer 2, a solid element 3 having a color center, and a second optical functional layer 4 arranged in a thickness direction D. T In this order, the solid-state element 3 excites the color center from the ground state to an excited state by excitation light including light of a first wavelength, and emits photoluminescence including light of a second wavelength. The first optical functional layer 2 reflects the light of the second wavelength emitted from the solid-state element 3, and the second optical functional layer 4 transmits and reflects the light of the second wavelength. Furthermore, in the present disclosure, the solid-state element 3 has a thickness direction D T The semiconductor device has a cavity structure having a plurality of element portions 3p isolated from one another by grooves X extending in the direction perpendicular to the substrate.

[0016] In the sensor element structure of the present disclosure, the solid-state element has a predetermined cavity structure, so that the photoluminescence including the light of the second wavelength emitted from the solid-state element can efficiently proceed to the second optical functional layer side. In addition, the solid-state element is located between the first optical functional layer that reflects the light of the second wavelength and the second optical functional layer that transmits and reflects the light of the second wavelength, so that the light of the second wavelength can be resonated and amplified between the first optical functional layer and the second optical functional layer, and can be easily emitted from the second optical functional layer. Therefore, the sensor element structure can improve the intensity of the emitted photoluminescence.

[0017] The sensor element structure of the present disclosure will be described in detail below.

[0018] 1. Solid-state components As shown in FIG. 1( a ) and FIG. 1( b ), in the present disclosure, a solid-state element 3 having a color center has a thickness direction D T , it is located between the first optical functional layer 2 and the second optical functional layer 4 .

[0019] A solid-state element having a color center is an element in which electrons or holes are captured in point defects in a solid ionic crystal. Examples of materials used for solid-state elements having a color center include diamond and silicon carbide (SiC), among which diamond is preferred because of its excellent spin coherence properties at room temperature. Examples of color centers include the color center of diamond and the color center of silicon carbide (SiC). Examples of color centers of diamond include the nitrogen-vacancy center (NV center) and silicon-vacancy center, with the NV center being preferred.

[0020] The operation mechanism of the magnetic sensor using diamond crystal as the solid-state element and NV center as the color center will be described in detail below. Figure 2 is a schematic diagram showing the structure of a diamond element having an NV center. As shown in Figure 2, the NV center is a complex impurity defect consisting of a pair of nitrogen (Nitrogen) that has entered a substitutional position of carbon in the diamond lattice and a vacancy (Vacancy) where a carbon atom adjacent to this nitrogen has been removed. This NV center is in a neutral charge state NV 0 It captures one electron from the atom to form a -1 NV - Then, the magnetic quantum number m S =-1, 0, +1 electron spin triplet states are formed.

[0021] Figure 3 shows the NV - 1 is a diagram for explaining the principle of a diamond quantum sensor that has a diamond element having a structure and measures magnetic field strength, etc., based on the principle of optically detected magnetic resonance. When the diamond element is irradiated with green light GL (wavelength approximately 532 nm) without active microwave irradiation, m s The electron excited from the m = 0 state emits red fluorescence RL with a longer wavelength (about 637 nm) and returns to the original m s =0 (path A).

[0022] On the other hand, when this crystal is irradiated with microwaves around 2.87 GHz, electrons are transformed from the ms=0 state to the m s =±1 state. s When the above green light is irradiated to the state of m = ±1, some of the electrons emit red fluorescence (path B), while some of the electrons undergo nonradiative transition to m s = 0 (path C), so it does not contribute to light emission. - When the center is excited away from the level at which electron spin resonance occurs, the brightness of the red fluorescent light RL decreases.

[0023] m s The =±1 state is degenerate in the absence of a magnetic field, but in the presence of a magnetic field, Zeeman splitting occurs and the state is split into two levels. Taking advantage of this characteristic, we can s From the state of =0 to m sBy sweeping the microwaves that excite the NV = ±1 state, it is possible to accurately measure the resonance level by electron spin resonance (ESR). For example, - When a magnetic field is applied to the center, the optically detected magnetic resonance spectrum shows two points of brightness drop in the red fluorescence RL, as shown in Fig. 4(a). s When the range of ±1 widens, the energy difference between the two peaks (here, the frequency difference Δf=f2-f1) also widens (Figure 4(b)). In this way, the frequency split Δf (=f2-f1) of the microwave MW corresponding to the two brightness reduction points becomes larger in proportion to the external magnetic field. Therefore, the external magnetic field can be measured from the red emission intensity.

[0024] In the present disclosure, the solid-state component 3 is T By being located between the first optical functional layer 2 and the second optical functional layer 4, it is possible to resonate and amplify light between the first optical functional layer and the second optical functional layer.

[0025] The thickness T0 (optical distance) of such a solid-state element is preferably n1 times (n1 is an integer) the second wavelength λ2 / 2. The optical distance is the physical distance multiplied by the refractive index of the medium. This is because resonance of light of the second wavelength is likely to occur. n1 is 1 or more and is appropriately set by simulation or the like based on the physical properties such as the dielectric constant and transmittance of the cavity material (solid-state element).

[0026] In the present disclosure, the solid-state element is T The second optical function layer has a cavity structure having a plurality of element portions 3p isolated from each other by grooves X extending in a direction perpendicular to the surface of the second optical function layer. By having such a cavity structure, photoluminescence including light of the second wavelength can be efficiently propagated to the second optical function layer side due to the difference in refractive index with the grooves X (air).

[0027] In the present disclosure, the shape and arrangement of the grooves are not particularly limited as long as the solid-state element can be isolated into a plurality of element portions. As shown in FIG. 1(b), the grooves X may be formed, for example, from the surface on the second optical functional layer 4 side to the interface between the solid-state element 3 and the first optical functional layer 2. Meanwhile, the grooves X may also be formed in the first optical functional layer. As shown in FIG. 1(a), the grooves X are preferably in a lattice shape in plan view.

[0028] The shape of the element portion 3p in plan view is not particularly limited, but may be, for example, a rectangle, a polygon, or a circle. The size of the element portion in plan view is, for example, 50 nm or more, and preferably 100 nm or more. For example, it is 100 μm or less, and preferably 10 μm or less. The size of the element portion refers to the longest length of the element portion, which corresponds to W in the case of FIG. 1.

[0029] 5 is a schematic cross-sectional view showing an example of a sensor element structure according to the present disclosure. As shown in FIG. 5, the element portion 3p is T Direction perpendicular to L Extends in the thickness direction D T It is preferable that the color center layer has a plurality of color center layers (NV in FIG. 5) positioned side by side at a predetermined interval T1 along the line.

[0030] By having a plurality of color center layers arranged side by side at a predetermined interval, it is possible to suppress mutual weakening of the light of the second wavelength, and to amplify the amount of light emitted. The predetermined interval T1 (optical distance) is preferably n2 times the second wavelength λ2 (n2 is a positive number). The n2 is preferably 0.6 or more and 1.4 or less, and more preferably 0.8 or more and 1.2 or less.

[0031] The number of color center layers included in each element portion 3p is, for example, 2 or more, or may be 5 or more, or may be 10 or more. On the other hand, the number is, for example, 1000 or less, or may be 500 or less, or may be 100 or less.

[0032] A method for arranging color centers at a predetermined interval can be used by a conventionally known method. In order to artificially form NV centers in diamond, for example, nitrogen atoms and vacancies are simultaneously introduced into diamond. A method for introducing nitrogen atoms is to use an ion implantation method after preparing diamond. In the ion implantation method, nitrogen atoms can be introduced into diamond in a desired arrangement and in a desired amount by improving the focusing technology of ion beams and the controllability of the amount of ions. In the ion implantation method, ions accelerated to several tens of kV to several thousand kV are usually irradiated, so that vacancies are also introduced at the same time as nitrogen. Alternatively, a method is used in which nitrogen is introduced during diamond synthesis and a diamond that has been previously nitrogen-doped is irradiated with a controlled electron beam.

[0033] 2.First optical functional layer The first optical functional layer in the present disclosure is a layer that reflects light of a second wavelength, and preferably transmits light of a first wavelength that excites a color center in the solid-state element from a ground state to an excited state.

[0034] The first optical functional layer has a reflectance of 70% or more, more preferably 90% or more, for the second wavelength. Alternatively, it may be, for example, 99.9% or less, or 95% or less. Also, the transmittance of the first wavelength is preferably 50% or more, more preferably 70% or more.

[0035] It is preferable that such a first optical functional layer is a multilayer film in which a plurality of materials having different refractive indices are alternately laminated to form a distributed Bragg reflector (DBR). As shown in Fig. 1(b), it is preferable that the first optical functional layer 2 is a multilayer film in which low refractive index layers 2a and high refractive index layers 2b are alternately laminated.

[0036] Examples of layers included in the multilayer film include combinations of materials such as SiO2, TiO2, ZrO2, MgO, Ta2O5, Al2O3, MgF2, and CaF2. Among them, it is preferable to have a SiO2 layer as a low refractive index layer and a TiO2 layer as a high refractive index layer. The reflectance can be controlled by adjusting the type and number of layers (the number of pairs of low refractive index layers and high refractive index layers) included in the multilayer film. The thickness (optical distance) of each layer included in the multilayer film is preferably the second wavelength λ2 / 4.

[0037] 3.Second optical functional layer The second optical functional layer in the present disclosure is a layer that transmits and reflects light of the second wavelength λ2. Examples of such second optical functional layers include those of the same type as the multilayer film of the first optical functional layer described above. The number of layers (the number of pairs of low refractive index layers and high refractive index layers) included in the multilayer film of the second optical functional layer is preferably smaller than the number of layers (the number of pairs of low refractive index layers and high refractive index layers) included in the multilayer film of the first optical functional layer. This is because the reflectance of the second optical functional layer can be made smaller than the reflectance of the first optical functional layer.

[0038] The second optical functional layer has a reflectance of light of the second wavelength of preferably 10% or more, more preferably 30% or more. On the other hand, for example, it is preferably 50% or less, more preferably 40% or less. Also, the transmittance of light of the second wavelength of preferably 50% or more, more preferably 70% or more. On the other hand, for example, it is preferably 90% or less, more preferably 80% or less.

[0039] 4. Thickness adjustment layer As described above, the thickness T0 (optical distance) of the solid-state element in the present disclosure is preferably n1 times (n1 is an integer) the second wavelength λ2 / 2. On the other hand, when the thickness of the solid-state element is less than the above thickness, the sensor element structure 1 of the present disclosure preferably includes a thickness adjustment layer 5 at least either between the solid-state element 3 and the first optical functional layer 2 or between the solid-state element 3 and the second optical functional layer 4, as shown in FIG.

[0040] The thickness (optical distance) of the thickness adjusting layer 5 is preferably such that the total thickness together with the thickness of the solid-state element is n1 times (n1 is an integer) the second wavelength λ2 / 2.

[0041] The refractive index of the thickness adjusting layer is preferably close to that of the solid-state component. The ratio (n5 / n0) of the refractive index n5 of the thickness adjusting layer to the refractive index n0 of the solid-state component is, for example, 1.5 or less, and preferably 1.3 or less. On the other hand, it may be, for example, 0.65 or more, and 0.75 or more.

[0042] The thickness adjusting layer having the above refractive index is preferably a layer made of, for example, TiO2, In2O3, SnO2, Ta2O5, Nb2O5, Ti3O5, TiO, or the like.

[0043] 5. Manufacturing method A manufacturing method for the sensor element structure of the present disclosure is not particularly limited, but may include, for example, a solid-state element preparation step of preparing the solid-state element, a placement step of placing the first optical adjustment layer on one side of the solid-state element and the second optical adjustment layer on the other side, and a groove formation step of forming a groove from the second optical adjustment layer side to at least the interface between the solid-state element and the first optical adjustment layer.

[0044] The solid-state component preparation step can be carried out by a conventionally known method.

[0045] The disposing step may be, for example, a method of laminating and disposing the first optical adjustment layer and the second optical adjustment layer on a solid-state element by sputtering film formation, etc. The disposing of the first optical adjustment layer and the disposing of the second optical adjustment layer may be performed in any order.

[0046] The groove forming step can be carried out by a conventionally known method. For example, the grooves can be formed in the second optical adjustment layer and the solid-state element by dry etching such as reactive ion etching.

[0047] B. Solid-state quantum sensor module Fig. 7 is a schematic cross-sectional view showing an example of a solid-state quantum sensor module according to the first embodiment of the present disclosure. Fig. 12 is a schematic cross-sectional view showing an example of a solid-state quantum sensor module according to the second embodiment of the present disclosure. Note that the groove X of the sensor element structure 1 is omitted in Figs. 7 and 12 and the schematic cross-sectional views of the solid-state quantum sensor module described later. The solid-state quantum sensor modules 10A and 10B of the present disclosure include a substrate 11 having a first main surface S1 and a second main surface S2 located opposite to the first main surface S1, the above-mentioned sensor element structure 1 located on the first main surface S1 side of the substrate 11, a light guide plate 14 located between the substrate 11 and the sensor element structure 1, a microwave field transmission antenna 12 located on the substrate 11 side of the sensor element structure 1, a light source 13 located on the first main surface S1 side of the substrate 11 and emitting excitation light including a first wavelength that excites a color center in the solid-state element 3 from a ground state to an excited state toward the light guide plate 14, and a photodetector 15 located on the first main surface S1 side of the substrate 11 and detecting photoluminescence including light of a second wavelength. The sensor element structure 1 is arranged so that the first optical functional layer 2 is on the substrate 11 side.

[0048] According to the solid-state quantum sensor module of the present disclosure, since it includes the above-mentioned sensor element structure, it becomes a solid-state quantum sensor module capable of highly sensitive sensing.

[0049] In conventional sensor devices, the photodetector is often not integrated on the substrate, and miniaturization is required. On the other hand, if the light source and the photodetector are integrated on the substrate for miniaturization, they may be adversely affected by noise from the microwave field transmission antenna. In contrast, the solid-state quantum sensor modules 10A and 10B of the present disclosure can be miniaturized because the light source 13 and the photodetector 15 can be integrated on the first main surface S1 of the substrate 11. Furthermore, according to the present disclosure, by including the light guide plate 14 arranged at a predetermined position, the excitation light including the light of the first wavelength emitted from the light source 13 can be efficiently guided to the sensor element structure 1.

[0050] The solid-state quantum sensor module in the present disclosure will be described in detail as a first embodiment and a second embodiment depending on the position of the light source.

[0051] B-1. First embodiment As shown in FIG. 7, in the solid-state quantum sensor module 10A of this embodiment, the photodetector 15 is arranged in a normal direction D of the first main surface S1 of the substrate 11. N When viewed along the normal direction D of the first main surface S1 of the substrate 11, the light source 13 is located at a position that does not overlap with the microwave field transmitting antenna 12. By arranging in this manner, it is possible to reduce the influence of microwave noise on the photodetector 15. Furthermore, in this embodiment, the light source 13 is aligned in the normal direction D of the first main surface S1 of the substrate 11. N When viewed along the normal direction D of the first main surface S1 of the substrate 11, the substrate 11 is located at a position that does not overlap with the microwave field transmission antenna 12. By arranging the substrate 11 in this manner, it is possible to reduce microwave noise to the light source 13. Hereinafter, each component of the solid-state quantum sensor module of this embodiment will be described in detail. N , simply by the normal direction D N Also, the normal direction D N is usually the thickness direction D T Matches.

[0052] 1.Sensor element structure The features of the sensor element structure in this embodiment are similar to those of the above-mentioned "A. Sensor element structure", and therefore a description thereof will be omitted here.

[0053] In the solid-state quantum sensor module of this embodiment, the sensor element structure is arranged so that the first optical function layer faces the substrate. As shown in FIG. 7, the sensor element structure 1 is oriented in the normal direction D N 7, the surface of the microwave field transmitting antenna 12 opposite to the surface of the substrate 11. N When viewed along the normal direction D, it is preferable that at least a part of the sensor element structure 1 overlaps with the light guide plate 14. NWhen viewed along the line 11, the sensor element structure 1 is preferably at least partially overlapped with the microwave field transmitting antenna 12, and may be completely overlapped.

[0054] 2. Antennas for transmitting microwave fields The solid-state quantum sensor module in this embodiment includes a microwave field transmitting antenna to apply a microwave field to the solid-state element. As shown in Fig. 7, the microwave field transmitting antenna 12 is located closer to the substrate 11 than the sensor element structure 1. In this embodiment, the microwave field transmitting antenna 12 may be located on the surface of the substrate 11, may be located within the substrate 11, or may be located between the substrate 11 and the light guide plate 14.

[0055] In this embodiment, the microwave field transmitting antenna 12 is aligned in the normal direction D N When viewed along the line, the light detector 15 and the light source 13 are positioned so as not to overlap with each other.

[0056] The microwave field transmission antenna includes, for example, a metal layer. The material of the metal layer is not particularly limited as long as it has excellent conductivity, and may be, for example, a metal such as gold, silver, copper, iron, nickel, chromium, or an alloy. The metal layer may have a pattern shape. The shape of the metal layer of the microwave field transmission antenna in this embodiment may be a loop shape, a patch shape called a microstrip antenna, a stripe shape, or the like. In addition, the transmission antenna described in detail in the second embodiment may be used as the microwave field transmission antenna in this embodiment.

[0057] In this embodiment, it is preferable to have a metal layer shape that transmits microwaves mainly in a vertical direction so that the microwaves are not directly exposed to the photodetector and the light source, such as a loop antenna or a microstrip antenna formed in a planar shape.

[0058] The solid-state quantum sensor module in this embodiment may include a microwave field control circuit that provides a microwave source signal to the microwave field transmitting antenna. The microwave field control circuit may be electrically connected to the microwave field transmitting antenna. The microwave source signal may have a microwave frequency of, for example, about 2 GHz or more and about 4 GHz or less.

[0059] 3.Light source The solid-state quantum sensor module in this embodiment is provided with a light source located on the first main surface side of the substrate, which emits excitation light including light of a first wavelength that excites a color center in the solid-state element from a ground state to an excited state. As shown in FIG. 7, in this embodiment, the light source 13 is located at a position capable of emitting light including the first wavelength toward the light guide plate 14, and is aligned in a direction parallel to the normal D. N 1. When viewed along the line, it is disposed at a position not overlapping with the microwave field transmitting antenna 12.

[0060] The light source includes light at a first wavelength that excites one or more color centers in the solid state device from a ground state to an excited state. The first wavelength is different from a second wavelength emitted by the color centers, as described below. The first wavelength may be, for example, about 532 nm, for exciting the color centers in the solid state device.

[0061] Examples of the light source include a light emitting diode and a laser.

[0062] 4.Light guide plate The solid-state quantum sensor module in this embodiment includes a light guide plate located between the substrate and the sensor element structure, which guides excitation light, including light of a first wavelength emitted from a light source, to the solid-state element. In this embodiment, the light guide plate may be an optical waveguide that propagates light in the surface direction of the light guide plate, or may be a diffusion plate that diffuses light in the vertical direction.

[0063] (1) Optical waveguide FIG. 8 is a schematic top view of the solid-state quantum sensor module shown in FIG. 7. In FIG. 8, the sensor element structure 1 of FIG. 7 is omitted. As shown in FIG. 7 and FIG. 8, in this embodiment, the light guide plate 14 is preferably an optical waveguide 140 having a core layer 141 and a clad layer 142 having a refractive index different from that of the core layer 141. Although not particularly shown, the clad layer may have a first clad layer having a recess for the core layer and a second clad layer that seals the core layer arranged in the recess of the first clad layer. The refractive index of the clad layer is preferably lower than that of the core layer, and light that enters the core layer is transmitted while being totally reflected inward at the boundary with the clad layer.

[0064] 8, the core layer 141 preferably has a branched structure in which a main core portion 141a in a linear shape is branched into two or more branch core portions (141b, 141c, 141d, 141e, 141f) at a branch portion located midway. The branch core portions are arranged at a predetermined interval, and the cladding layer 142 preferably collectively encases the five branch core portions.

[0065] The core layer and the clad layer each preferably contain a cured product of a curable resin composition that is cured by heat or light. Examples of the cured product of the curable resin composition include a cured product of an ionizing radiation curable resin composition and a cured product of a heat curable resin composition. Examples of the ionizing radiation curable resin composition include an ultraviolet curable resin composition and an electron beam curable resin composition. Examples of the material of the ultraviolet curable resin composition include a polymerizable oligomer or monomer having an acryloyl group, such as urethane acrylate, oligoester acrylate, trimethylolpropane triacrylate, neopentyl glycol diacrylate, epoxy acrylate, polyester acrylate, polyether acrylate, and melamine acrylate, or a mixture of these oligomers and monomers with a monofunctional or polyfunctional monomer containing a polymerizable vinyl group, such as acrylic acid, acrylamide, acrylonitrile, and styrene, to which a photopolymerization initiator, a sensitizer, or a desired additive is added.

[0066] The optical waveguide may include a resin substrate supporting the core layer and the cladding layer. The resin substrate film is formed of, for example, polyethylene terephthalate (PET), polycarbonate (PC), etc. The resin substrate is necessary in the manufacturing stage of the optical waveguide, but may be removed when it is actually used.

[0067] It is preferable that the optical waveguide has the branch core portion in a region overlapping with the sensor element structure, because this allows light of the first wavelength to be efficiently introduced into the solid-state element.

[0068] (2) Diffuser The diffusion plate is not particularly limited as long as it is one that is generally used as a diffusion plate, but for example, those formed from methacrylate-styrene copolymer, methyl methacrylate-styrene copolymer, acrylonitrile-styrene copolymer, polycarbonate (PC), polyethylene terephthalate (PET), polystyrene, etc. can be used.

[0069] The diffusion plate used in the present invention may contain particles. For example, inorganic particles such as silica and alumina, fluororesin particles such as acrylic resin, styrene resin, polytetrafluoroethylene and polyfluorovinylidene, and silicone resin particles may be used. These particles may be used alone or in combination of two or more. The average particle size of the particles is preferably within a range of 0.8 μm to 10 μm in terms of scattering properties. The content of the particles may be appropriately adjusted.

[0070] (3)Other The light guide plate in this embodiment may have both the functions of the optical waveguide and the diffusion plate. N When viewed along the axis, light including the first wavelength is propagated by the optical waveguide between the end on the light source side and the end of the sensor element structure, and a diffuser is used in the area overlapping with the sensor element structure, making it easy to introduce light into the sensor element structure located above.

[0071] 5. Photodetector 7, the solid-state quantum sensor module in this embodiment is located on the first main surface S1 side of the substrate 11 and includes a photodetector 15 that detects photoluminescence including light of a second wavelength emitted from the sensor element structure 1. The photoluminescence may include, as the second wavelength, one or more wavelengths of light corresponding to the emission wavelength of the NV center (e.g., a wavelength of about 637 nm).

[0072] As shown in FIG. 7, the photodetector 15 is aligned in the normal direction D N When viewed along the line, the photodetector 15 is disposed at a position not overlapping with the microwave field transmitting antenna 12. The photodetector 15 preferably has a detection surface on at least the upper surface.

[0073] 6. Reflective mirror As shown in Fig. 7, the solid-state quantum sensor module 10A in this embodiment preferably includes a reflecting mirror 16 that reflects the photoluminescence emitted from the sensor element structure 1 and directs it toward the detector. The reflecting mirror may be a member made of a metal or nonmetal, or a member having a reflecting layer made of a metal or nonmetal. The metal or nonmetallic material is preferably a nonmagnetic material, and examples of the metal or nonmetallic material that can be used include aluminum (Al), tin (Sn), silver (Ag), gold (Au), titanium (Ti), chromium (Cr), alloys thereof, or oxides, nitrides, and oxynitrides thereof.

[0074] The position of the reflecting mirror is not particularly limited as long as it is at least a position where the reflecting mirror can reflect the photoluminescence emitted from the sensor element structure and direct it toward the detector. Since the photoluminescence is emitted upward from the sensor element structure, the reflecting mirror is preferably disposed at least above the sensor element structure. Also, as shown in FIG. 7, the reflecting mirror is preferably disposed on the first surface of the substrate 11 so as to cover the sensor element structure 1.

[0075] The reflecting mirror may be capable of blocking light from the outside. In other words, the reflecting mirror may function as a light-shielding wall, which will be described later. In this case, the solid-state quantum sensor module of this embodiment may have a heater element, which will be described later, at a position surrounded by the reflecting mirror and the substrate.

[0076] 7. Substrate The solid-state quantum sensor module in this embodiment includes a substrate, which is a member that supports components such as the light source, the photodetector, the solid-state device, the light guide plate, and the microwave field transmitting antenna.

[0077] The material of the substrate may be, for example, an organic material, an inorganic material, or a composite material containing an organic material and an inorganic material. In this embodiment, the substrate is preferably made of a material containing an inorganic material, and more preferably made of an inorganic material.

[0078] The material of the substrate may be, for example, an inorganic material substrate, such as a glass substrate, a ceramic substrate, a resin substrate, a silicon substrate, a quartz substrate, or a sapphire substrate. In this embodiment, the substrate is preferably a glass substrate or a silicon substrate. When the substrate is a glass substrate, examples of the glass used include soda lime glass, alkali-free glass, and quartz glass. When the substrate is a resin substrate, examples of the resin used include polyimide. When the substrate is a composite material substrate, examples of the glass used include a glass epoxy substrate.

[0079] As shown in FIG. 7, the substrate 11 is N The substrate 11 may have a through hole penetrating the substrate 11. A through electrode layer 17 is disposed on the inner wall of the through hole. A conductive layer 18 may be provided on the second main surface S2 side of the substrate 11. For example, the substrate may be one in which the conductive layer 18 is electrically connected to the light source, the photodetector, and the microwave field transmission antenna by a through electrode layer formed in the through hole of the substrate.

[0080] The material of the through electrode layer and the conductive layer is not particularly limited as long as it is a material having electrical conductivity, and examples thereof include metal materials such as simple metals, alloys, and metal compounds. Examples of metal elements contained in the metal materials include chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, germanium, arsenic, ruthenium, rhodium, palladium, silver, cadmium, indium, tin, antimony, osmium, iridium, platinum, gold, mercury, thallium, lead, bismuth, molybdenum, titanium, tungsten, tantalum, and aluminum. Among them, simple metals such as copper, gold, silver, platinum, rhodium, tin, aluminum, nickel, and chromium, or alloys containing at least one of these metal elements are preferred.

[0081] 8.Other (1)Reflective layer 9(a) and 9(b) are schematic cross-sectional views showing an example of a solid-state quantum sensor module in this embodiment. As shown in FIG. 9(a), the solid-state quantum sensor module 10A in this embodiment preferably includes a reflective layer 19 that reflects light of the first wavelength on the surface side opposite to the surface located on the light guide plate 14 side of the microwave field transmission antenna 12. In particular, when the light guide plate 14 is the above-mentioned diffusion plate, it is preferable to arrange the reflective layer 19. When the substrate 11 is a glass substrate, the reflective layer 19 may be located on the second main surface S2 side of the substrate 11 as shown in FIG. 9(b). By arranging such a reflective layer, it is possible to suppress the light of the first wavelength from leaking out without being introduced into the solid-state element.

[0082] The reflective layer is not particularly limited as long as it reflects the light of the first wavelength, and may be, for example, a metal deposition film. The thickness of the reflective layer is not particularly limited as long as it can obtain a desired reflectance for the light including the first wavelength, and is appropriately set.

[0083] (2) Wavelength-selective filter Fig. 10 is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in the present disclosure. As shown in Fig. 10, the solid-state quantum sensor module 10A of this embodiment preferably includes a wavelength-selective filter 20 that selectively transmits light of a first wavelength in the light guide plate 14. The wavelength-selective filter may be located between the light guide plate 14 and the light source 13.

[0084] The wavelength-selective filter is not particularly limited as long as it selectively transmits light of the first wavelength, and any known filter can be used.

[0085] (3) Shielding part The solid-state quantum sensor module in this embodiment preferably includes a shielding portion that shields microwaves emitted from the microwave field transmission antenna. The shielding portion is preferably located so as to surround the microwave field transmission antenna. The shielding portion is preferably located at least one of inside the substrate and inside the light guide plate. By including the shielding portion, it is possible to prevent electronic components such as the photodetector and the light source from being directly exposed to the noise of the microwaves emitted from the microwave field transmission antenna. The shielding portion is, for example, made of a metal material. The metal material may be any material capable of shielding microwaves, and may be, for example, a metal material such as aluminum, chromium, copper, silver, titanium, or gold.

[0086] Fig. 11(a) is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in this embodiment. Fig. 11(b) is an exploded view of the solid-state quantum sensor module shown in Fig. 11(a). Fig. 11(c) is a top view of the light guide plate 14 shown in Fig. 11(b), and Fig. 11(d) is a schematic cross-sectional view of the substrate 11 and antenna 12 shown in Fig. 11(b) when viewed from the normal direction D N FIG.

[0087] 11(a) to 11(d) has a first shielding portion 21a in the substrate 11, and a second shielding portion 21b in the light guide plate 14. By providing shielding portions both in the substrate and the light guide plate in this way, the shielding effect can be improved.

[0088] (4) Shading walls The solid-state quantum sensor module preferably includes a light-shielding wall that blocks external light. By including the light-shielding wall, highly sensitive sensing becomes possible. The material of the light-shielding wall is preferably a non-magnetic material that has light-shielding properties. A non-magnetic material is a material that is difficult to magnetize. Examples of such materials include metal materials such as aluminum, copper, and stainless steel, carbon, and chromium oxide.

[0089] (5) Reference photodetector The solid-state quantum sensor module in this embodiment preferably includes a reference photodetector that detects light having the first wavelength. By including the reference photodetector, it becomes possible to measure the intensity of light having the first wavelength from the light source while controlling it to a constant level, thereby enabling highly sensitive sensing.

[0090] (6) Heater element The solid-state quantum sensor module in this embodiment preferably includes a heater element at a position surrounded by the light-shielding wall and the substrate. The heater element is preferably disposed on the first main surface side of the substrate. By controlling the temperature environment inside the light-shielding wall to a constant value using the heater element, the shift of the optically detected magnetic resonance spectrum due to the temperature environment can be suppressed, enabling highly sensitive sensing.

[0091] (7) Permanent magnet The solid-state quantum sensor module in this embodiment may include a permanent magnet. The permanent magnet may be disposed adjacent to the solid-state component. The permanent magnet induces the Zeeman effect, m s =±1 spin sublevels are provided to lift the degeneracy.

[0092] (8) Other components The solid-state quantum sensor module in this embodiment may include various electronic components such as ICs (integrated circuits) including an amplifier and an A / D converter.

[0093] B-2. Second embodiment In the solid-state quantum sensor module 10B of the second embodiment shown in FIG. 12, the photodetector 15 is arranged in a normal direction D N When viewed along the normal direction D, the microwave field transmitting antenna 12 is not overlapped with the microwave field transmitting antenna 12. By arranging the antenna in this manner, the effect of microwave noise on the photodetector 15 can be reduced. Furthermore, in this embodiment, the microwave field transmitting antenna 12 is a transmission antenna that can transmit light including the first wavelength, and is arranged such that the microwave field transmitting antenna 12 is arranged in a position such that the microwave field transmitting antenna 12 does not overlap with the microwave field transmitting antenna 12 when viewed along the normal direction D. N In this embodiment, a light guide plate 14 is disposed between a light source 13 and a microwave field transmitting antenna 12. Each component of the solid-state quantum sensor module of this embodiment will be described in detail below.

[0094] According to this embodiment, the light source, the light guide plate, and the microwave field transmission antenna are arranged in a stacked manner, so that the solid-state quantum sensor module can be further miniaturized. Furthermore, the light from the light source can be efficiently introduced into the sensor element structure. Each component of the solid-state quantum sensor module of this embodiment will be described in detail below.

[0095] 1.Sensor element structure 12, in this embodiment, the sensor element structure 1 is located on the first main surface S1 side of the substrate 11, and is located on the surface of the light guide plate 14 opposite to the surface on the substrate 11 side. N 1, the sensor element structure 1 is disposed on the surface opposite to the surface of the microwave field transmitting antenna 12 on the substrate 11 side. N In the embodiment, the solid-state quantum sensor module 10B is located on the side opposite to the surface of the light source 13 on the substrate 11 side. N In the above, it is preferable that the sensor device includes a substrate 11, a light source 13, a light guide plate 14, a microwave field transmitting antenna 12, and a sensor element structure 1 in this order.

[0096] Other features of the sensor element structure in this embodiment than those described above are similar to those described in "A. Sensor element structure" above, so description thereof will be omitted here.

[0097] 2. Antennas for transmitting microwave fields The solid-state quantum sensor module in this embodiment includes a microwave field transmitting antenna to apply a microwave field to the solid-state element. As shown in Fig. 12, the microwave field transmitting antenna 12 in this embodiment is disposed closer to the substrate 11 than the sensor element structure 1. In this embodiment, the microwave field transmitting antenna 12 may be disposed between the light source 13 and the sensor element structure 1.

[0098] The microwave field transmission antenna in this embodiment is preferably a transmission antenna capable of transmitting light of the first wavelength. Such a transmission antenna includes, for example, a transparent substrate and a metal layer made of thin metal wires. This results in an antenna having both a light-opaque conductive part made of thin metal wires and a light-transmitting window part. There is no particular limitation on the material of the thin metal wires as long as it has excellent conductivity, and for example, metals such as gold, silver, copper, iron, nickel, and chromium, as well as alloys, may be used.

[0099] The pattern shape of the metal layer of the transparent antenna is not particularly limited, and may be, for example, a stripe shape, a mesh shape, or a random net shape, but the aperture ratio is preferably 80% or more from the viewpoint of transparency. The aperture ratio is the ratio of the thin metal wires to the whole.

[0100] The solid-state quantum sensor module in this embodiment may include a microwave field control circuit, which is the same as that in the first embodiment.

[0101] 3.Light source The solid-state quantum sensor module in this embodiment includes a light source that emits excitation light including light of a first wavelength that excites a color center in a solid-state element from a ground state to an excited state. As shown in Fig. 12, in this embodiment, the light source 13 is disposed at a position facing the microwave field transmission antenna 12 with the light guide plate 14 in between. That is, in the normal direction D N In this embodiment, a light guide plate 14 is located between a light source 13 and a microwave field transmitting antenna 12. Other features of the light source are similar to those of the first embodiment.

[0102] 4.Light guide plate The solid-state quantum sensor module in this embodiment includes a light guide plate that guides excitation light, including light of a first wavelength emitted from a light source, to a sensor element structure. In this embodiment, the light guide plate is preferably a diffusion plate, since it is required to guide light to a sensor element structure located above. In this embodiment, as shown in FIG. 12(b), the light guide plate 14 may have a recess in which a light source 13 can be disposed. Other features of the diffusion plate are the same as those of the diffusion plate described in the first embodiment.

[0103] 5. Photodetector The solid-state quantum sensor module in this embodiment is provided with a photodetector disposed on the first main surface side of the substrate and detecting photoluminescence including light of a second wavelength. Other features of the photodetector are the same as those of the first embodiment.

[0104] 6. Reflective mirror 12, the solid-state quantum sensor module 10B in this embodiment preferably includes a reflecting mirror 16 that reflects the photoluminescence emitted from the sensor element structure 1 and directs it toward the detector. The reflecting mirror is the same as the substrate described in the first embodiment.

[0105] 7. Substrate The solid-state quantum sensor module in this embodiment includes a substrate. The substrate is a member that supports components such as the light source, the photodetector, the sensor element structure, the light guide plate, and the microwave field transmission antenna. The substrate is the same as the substrate described in the first embodiment.

[0106] 8.Other (1)Reflective layer Fig. 13 is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in this embodiment. As shown in Fig. 13, the solid-state quantum sensor module 10B in this embodiment preferably includes a reflective layer 19 that reflects light of the first wavelength on the surface of the light guide plate 14 opposite to the surface on the sensor element structure 1 side. By including such a reflective layer, it is possible to suppress leakage of light of the first wavelength from the light guide plate 14. Other features of the reflective layer are the same as those of the reflective layer described in the first embodiment.

[0107] (2) Shading wall and heater element The solid-state quantum sensor module in this embodiment preferably includes a light-shielding wall that blocks light from the outside. The solid-state quantum sensor module in this embodiment preferably includes a heater element at a position surrounded by the light-shielding wall and the substrate. The light-shielding wall and the heater element may be the same as those in the first embodiment.

[0108] (3)Other The solid-state quantum sensor module in this embodiment may include other components such as a reference photodetector and a permanent magnet. The reference photodetector and the permanent magnet may be the same as those in the first embodiment.

[0109] C. Sensor device The present disclosure provides a sensor device including the above-mentioned solid-state quantum sensor module. The sensor device of the present disclosure can be miniaturized because it includes the above-mentioned solid-state quantum sensor module.

[0110] 1.Solid-state quantum sensor module The solid-state quantum sensor module in the present disclosure is the solid-state quantum sensor module of the first and second embodiments described above.

[0111] 2.Other The sensor device according to the present disclosure preferably comprises a controller for controlling the light source, the microwave field transmitting antenna and the photodetector, and may also comprise a data processor for processing the light measurement signal obtained by the photodetector.

[0112] 3.Applications In the present disclosure, the sensor device is preferably a measuring device that measures a magnetic field. Meanwhile, by making the color center electron spin interact with the object to be measured, it is possible to investigate not only the magnetic field but also various information of the object to be measured. Since the electron spin state of the color center changes depending on various factors such as the electric field from the object to be measured, the temperature of the object to be measured, and mechanical quantities such as mechanical stress (pressure) applied to the object to be measured, it is possible to investigate the electric field, temperature, mechanical quantities, etc. of the object to be measured by appropriately processing the detected data of the electron spin state after the interaction.

[0113] The present disclosure is not limited to the above-described embodiments. The above-described embodiments are merely examples, and anything that has substantially the same configuration as the technical idea described in the claims of the present disclosure and exhibits similar effects is included in the technical scope of the present disclosure.

[0114] That is, the present disclosure provides the following inventions.

[0115] [1] A first optical functional layer, a solid-state element having a color center, and a second optical functional layer are provided in this order in a thickness direction; The solid-state component comprises: the color center is excited from a ground state to an excited state by excitation light including light of a first wavelength, and photoluminescence including light of a second wavelength is emitted; the device has a cavity structure having a plurality of element portions isolated from each other by grooves extending in the thickness direction; the first optical functional layer reflects light of the second wavelength, The second optical functional layer transmits and reflects light of the second wavelength, the sensor element structure.

[0116] [2] The sensor element structure according to [1], wherein the first optical functional layer transmits light of the first wavelength.

[0117] [3] The sensor element structure according to [1] or [2], further comprising a thickness adjustment layer at least either between the solid-state element and the first optical functional layer or between the solid-state element and the second optical functional layer.

[0118] [4] The element portion is The sensor element structure according to any one of [1] to [3], having a plurality of color center layers extending in a direction perpendicular to the thickness direction and arranged side by side at predetermined intervals along the thickness direction.

[0119] [5] The sensor element structure according to any one of [1] to [4], wherein the solid-state element is a diamond having an NV center.

[0120] [6] a substrate having a first main surface and a second main surface opposite the first main surface; a sensor element structure according to any one of claims 1 to 5, which is located on the first main surface side of the substrate; a light guide plate located between the substrate and the sensor element structure; a microwave field transmitting antenna located on the substrate side relative to the sensor element structure; a light source located on the first main surface side of the substrate and configured to emit excitation light including light of the first wavelength toward the light guide plate; a photodetector located on the first main surface side of the substrate and configured to detect photoluminescence including light of the second wavelength, A solid-state quantum sensor module, wherein the sensor element structure is positioned so that the first optical functional layer faces the substrate.

[0121] [7] The solid-state quantum sensor module according to [6], wherein the photodetector does not overlap with the microwave field transmitting antenna when viewed along a normal direction of the first main surface of the substrate.

[0122] [8] The solid-state quantum sensor module according to [6] or [7], wherein the light source does not overlap with the microwave field transmitting antenna when viewed along a normal direction of the first main surface of the substrate.

[0123] [9] The solid-state quantum sensor module according to any one of [6] to [8], wherein the microwave field transmitting antenna is located closer to the substrate than the light guide plate.

[0124]

[10] The solid-state quantum sensor module of [6] or [7], wherein the microwave field transmitting antenna is a transparent antenna capable of transmitting light of the first wavelength, and the light guide plate is positioned between the light source and the microwave field transmitting antenna in the normal direction of the first main surface of the substrate.

[0125]

[11] The solid-state quantum sensor module according to any one of [6] to

[10] , further comprising a reflecting mirror that reflects the photoluminescence emitted from the sensor element structure and directs it toward the detector.

[0126]

[12] A solid-state quantum sensor module described in any of [6] to

[11] , wherein at least one of the substrate and the light guide plate has a shielding portion that blocks microwaves emitted from the microwave field transmitting antenna.

[0127]

[13] A sensor device comprising a solid-state quantum sensor module according to any one of [6] to

[12] . [Explanation of symbols]

[0128] 1 … Sensor element structure 2...First optical functional layer 2a...Low refractive index layer 2b…High refractive index layer 3. Solid-state elements 3p... Element section 4…Second optical functional layer 5 … Thickness adjustment layer 10A, 10B … Solid-state quantum sensor module 11 ... Substrate 12 ... Antennas for transmitting microwave fields 13 … light source 14 … Light guide plate 15 ... Photodetector 16 ... Reflective mirror 17 … Through electrode layer 18 ... Conductive layer 19 … reflective layer 20...Wavelength selection filter 21a, 21b … Shielding part 140… Optical waveguide 141… Core layer 142… Cladding layer

Claims

1. a first optical functional layer, a solid-state element having a color center, and a second optical functional layer, in this order in a thickness direction; The solid-state component is the color center is excited from a ground state to an excited state by excitation light including light of a first wavelength, and photoluminescence including light of a second wavelength is emitted; the device has a cavity structure having a plurality of element portions isolated from each other by grooves extending in the thickness direction; the first optical functional layer reflects light of the second wavelength, The second optical functional layer transmits and reflects light of the second wavelength.

2. 2. The sensor element structure according to claim 1, wherein the first optical functional layer transmits light of the first wavelength.

3. The sensor element structure according to claim 1 , further comprising a thickness adjustment layer at least one of between the solid-state element and the first optical functional layer and between the solid-state element and the second optical functional layer.

4. The element portion is 2. The sensor element structure according to claim 1, further comprising a plurality of color center layers extending in a direction perpendicular to the thickness direction and arranged side by side at predetermined intervals along the thickness direction.

5. 2. The sensor element structure of claim 1, wherein the solid element is diamond having NV centers.

6. a substrate having a first major surface and a second major surface opposite the first major surface; a sensor element structure according to any one of claims 1 to 5, which is located on the first main surface side of the substrate; a light guide plate located between the substrate and the sensor element structure; a microwave field transmitting antenna located on the substrate side relative to the sensor element structure; a light source located on the first main surface side of the substrate and configured to emit excitation light including light of the first wavelength toward the light guide plate; a photodetector located on the first main surface side of the substrate and configured to detect photoluminescence including light of the second wavelength, A solid-state quantum sensor module, wherein the sensor element structure is positioned so that the first optical functional layer faces the substrate.

7. 7. The solid-state quantum sensor module of claim 6, wherein the photodetector does not overlap the microwave field transmitting antenna when viewed along a normal to the first major surface of the substrate.

8. 7. The solid-state quantum sensor module of claim 6, wherein the light source does not overlap the microwave field transmitting antenna when viewed along a normal to the first major surface of the substrate.

9. The solid-state quantum sensor module according to claim 6 , wherein the microwave field transmitting antenna is located closer to the substrate than the light guide plate.

10. 7. The solid-state quantum sensor module of claim 6, wherein the microwave field transmitting antenna is a transparent antenna capable of transmitting light of the first wavelength, and the light guide plate is located between the light source and the microwave field transmitting antenna in a normal direction to the first main surface of the substrate.

11. 7. The solid-state quantum sensor module of claim 6, further comprising a reflecting mirror that reflects the photoluminescence emitted from the sensor element structure toward the detector.

12. The solid-state quantum sensor module according to claim 6 , wherein at least one of the substrate and the light guide plate includes a shielding portion that blocks microwaves emitted from the microwave field transmitting antenna.

13. A sensor device comprising a solid-state quantum sensor module according to any one of claims 6 to 12.

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