Semiconductor device

Abstract

To provide a semiconductor device capable of inhibiting a wiring board from becoming a high temperature.SOLUTION: A semiconductor device includes: a first module part 10 in which a semiconductor chip 120 is sealed by a first sealing member 150; and a second module part 20 in which a wiring board 210 electrically connected to the semiconductor chip 120 is sealed with a second sealing member 230. The first module part 10 and the second module part 20 are disposed in a lamination manner. An air layer 600 having lower heat conductivity than those of the first sealing member 150 and the second sealing member 230 is disposed between the semiconductor chip 120 and the wiring board 100.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device in which a semiconductor chip and a wiring substrate are sealed with a sealing member. [Background technology]

[0002] Conventionally, a semiconductor device in which a semiconductor chip and a wiring board are sealed with a sealing member has been proposed (see, for example, Patent Document 1). Specifically, in this semiconductor device, a semiconductor chip on which transistors and the like are formed is disposed on a lead frame. The wiring board is disposed on the lead frame in a state separated from the semiconductor chip and is electrically connected to the semiconductor chip. The semiconductor chip and the wiring board are sealed together with a sealing member made of a molding resin or the like. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2011-151157 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, in such a semiconductor device, heat generated in the semiconductor chip is transferred to the wiring board via the molding resin, which may cause the wiring board to become hot and reduce its reliability.

[0005] An object of the present disclosure is to provide a semiconductor device capable of preventing a wiring board from becoming too hot. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, the semiconductor device comprises a first module portion (10) in which a semiconductor chip (120) having a semiconductor element formed thereon is sealed with a first sealing member (150), and a second module portion (20) in which a wiring board (210) electrically connected to the semiconductor chip is sealed with a second sealing member (230), the first module portion and the second module portion being arranged in a stacked manner, the semiconductor device has a conductive bonding layer (510) arranged between the first module and the second module and electrically connecting a terminal portion (140) connected to the semiconductor chip and a terminal portion (220) connected to the wiring board, and an insulating bonding layer (520) arranged between the first module portion and the second module, and an air layer (600) having a lower thermal conductivity than the first sealing member and the second sealing member is arranged between the semiconductor chip and the wiring board.

[0007] According to this, an air layer having a lower thermal conductivity than the first sealing member and the second sealing member is disposed between the semiconductor chip and the wiring board, which makes it difficult for heat from the semiconductor chip to be transferred to the wiring board by the air layer, thereby preventing the wiring board from becoming too hot.

[0008] The reference symbols in parentheses attached to each component indicate an example of the correspondence between the component and specific components described in the embodiments described below. [Brief description of the drawings]

[0009] [Figure 1] 1 is a cross-sectional view of a semiconductor device according to a first embodiment. [Diagram 2] 1 is a schematic diagram of a semiconductor chip generating heat; [Figure 3A] 2A to 2C are cross-sectional views showing a manufacturing process of the semiconductor device of FIG. [Figure 3B] 3B is a cross-sectional view showing a manufacturing process of the semiconductor device subsequent to FIG. 3A. [Figure 4] FIG. 11 is a cross-sectional view of a semiconductor device according to a second embodiment. [Diagram 5] 11 is a diagram for explaining the relationship between an air chamber and the size of a semiconductor chip in the stacking direction. FIG. [Figure 6] FIG. 11 is a cross-sectional view of a semiconductor device according to a third embodiment. [Figure 7A] 7A to 7C are cross-sectional views showing a manufacturing process of the semiconductor device shown in FIG. [Figure 7B] 7B is a cross-sectional view showing a manufacturing process of the semiconductor device subsequent to FIG. 7A. [Figure 8] FIG. 13 is a cross-sectional view of a semiconductor device according to a fourth embodiment. [Figure 9] FIG. 13 is a cross-sectional view of a semiconductor device according to a fifth embodiment. [Figure 10] FIG. 13 is a cross-sectional view of a semiconductor device according to a sixth embodiment. [Figure 11] FIG. 13 is a cross-sectional view of a semiconductor device according to a seventh embodiment. [Figure 12] FIG. 13 is a cross-sectional view of a semiconductor device according to an eighth embodiment. [Figure 13] FIG. 13 is a cross-sectional view of a semiconductor device according to a ninth embodiment. [Figure 14] FIG. 23 is a cross-sectional view of a semiconductor device according to a tenth embodiment. [Figure 15] FIG. 23 is a cross-sectional view of a semiconductor device according to an eleventh embodiment. [Figure 16A] 16A to 16C are cross-sectional views showing a manufacturing process of the semiconductor device shown in FIG. [Figure 16B] 16B is a cross-sectional view showing a manufacturing process of the semiconductor device subsequent to FIG. 16A. [Figure 17] FIG. 23 is a cross-sectional view of a semiconductor device according to a twelfth embodiment. [Figure 18] FIG. 23 is a cross-sectional view of a semiconductor device according to a thirteenth embodiment. [Figure 19] FIG. 23 is a plan view of a semiconductor device according to a thirteenth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other will be denoted by the same reference numerals.

[0011] (First embodiment) The configuration of a semiconductor device according to a first embodiment will be described with reference to the drawings. The semiconductor device according to the present embodiment is preferably mounted on a vehicle such as an automobile and used to drive various electronic devices for the vehicle.

[0012] As shown in FIG. 1, the semiconductor device of this embodiment has a first module section 10 and a second module section 20, and is configured by stacking the first module section 10 and the second module section 20.

[0013] The first module section 10 includes a first support member 110, a semiconductor chip 120, a second support member 130, a control terminal section 140, a first sealing member 150, and the like.

[0014] The first support member 110 is composed of a lead frame or the like composed of, for example, Cu (copper), Fe (iron), or an alloy thereof. The first support member 110 of this embodiment has a first mounting portion 111 having a surface 111a and a back surface 111b opposite to the surface 111a, and a first connection terminal portion 112 connected to the first mounting portion 111. The first connection terminal portion 112 extends along the surface direction of the surface 111a of the first mounting portion 111, and is integrated with the first mounting portion 111 in this embodiment. The first connection terminal portion 112 of this embodiment extends opposite to the control terminal portion 140 side described later.

[0015] The semiconductor chip 120 has one surface 120a and another surface 120b opposite to the one surface 120a, and is configured by forming power elements (i.e., semiconductor elements) such as MOSFET elements and IGBT elements. Note that MOSFET is an abbreviation for Metal Oxide Semiconductor Field Effect Transistor, and IGBT is an abbreviation for Insulated Gate Bipolar Transistor. The semiconductor chip 120 is disposed on the surface 111a of the first mounting part 111 via a bonding member 401, with the other surface 120b side facing the first mounting part 111. Note that a gate pad or the like (not shown) is connected to the one surface 120a side of the semiconductor chip 120. In addition, the semiconductor chip 120 is also appropriately formed with a sense element such as a temperature sensor, although details are omitted.

[0016] The second support member 130 is composed of a lead frame or the like similar to the first support member 110, and has a second mounting portion 131 having a surface 131a and a back surface 131b opposite the surface 131a, and a second connection terminal portion 132 connected to the second mounting portion 131.

[0017] The second support member 130 has a surface 131a of the second mounting portion 131 connected to one surface 120a of the semiconductor chip 120 via a bonding member 402. That is, the first support member 110 and the second support member 130 are disposed to face each other with the semiconductor chip 120 sandwiched therebetween. The second connection terminal portion 132 extends along the planar direction of the surface 131a of the second mounting portion 131, and in this embodiment, extends in the same direction as the first connection terminal portion 112. In this embodiment, the second connection terminal portion 132 is integrated with the second mounting portion 131.

[0018] The control terminal portion 140 is connected to a gate pad (not shown) formed on one surface 120a of the semiconductor chip 120 via a bonding member 403. Moreover, the control terminal portion 140 of this embodiment is appropriately bent to adjust its shape so as to be exposed from one surface 150a of the first sealing member 150 described below.

[0019] The first sealing member 150 is made of molding resin, potting resin, or the like, and is formed to seal the first support member 110, the semiconductor chip 120, the second support member 130, the control terminal section 140, and the like. Specifically, the first sealing member 150 has a substantially rectangular parallelepiped shape having one surface 150a, another surface 150b opposite to the one surface 150a, and four side surfaces 150c. The first sealing member 150 is formed such that the back surface 111b of the first mounting section 111 in the first support member 110 is exposed from the other surface 150b, and the first connection terminal section 112 and the second connection terminal section 132 protrude from one of the four side surfaces 150c. The first sealing member 150 is also formed such that the control terminal section 140 is exposed from the one surface 150a.

[0020] Here, the outer shape of the first module unit 10 is formed by the first sealing member 150, the first support member 110 exposed from the first sealing member 150, and the like. Hereinafter, in the first module unit 10, the surface on the one surface 150a side of the first sealing member 150 will be referred to as the one surface 10a, the surface on the other surface 150b side will be referred to as the other surface 10b, and the surface on the side surface 150c side will be referred to as the side surface 10c. In other words, the first module unit 10 is configured such that the control terminal unit 140 is exposed from the one surface 10a, the first connection terminal unit 112 and the second connection terminal unit 132 protrude from one side surface 10c, and the back surface 111b of the first mounting unit 111 is exposed from the other surface 10b.

[0021] The second module section 20 includes a wiring substrate 210, a wiring terminal section 220, a second sealing member 230, and the like.

[0022] The wiring board 210 is composed of a printed circuit board having one surface 210a and the other surface 210b. Although not shown in particular, the wiring board 210 of this embodiment has one surface wiring formed on the one surface 210a side and other surface wiring formed on the other surface 210b side, and through-hole wiring connecting the one surface wiring and the other surface wiring is appropriately formed. The wiring board 210 has electronic components 211 such as chip capacitors and resistors mounted on the one surface 210a side via a bonding member 212, and a driving IC chip 213 for driving the semiconductor chip 120 mounted on the other surface 210b side via a bonding member not shown. The types and locations of the components arranged on the one surface 210a side and the other surface 210b side of the wiring board 210 can be changed as appropriate.

[0023] The wiring terminal portion 220 is disposed on the other surface 210b side of the wiring substrate 210 via a bonding member 221. Although only one wiring terminal portion 220 is shown in FIG. 1, the number of wiring terminal portions 220 corresponds to the configuration of the semiconductor chip 120, and they are appropriately disposed on other cross sections different from that in FIG.

[0024] The second sealing member 230 is made of molding resin, potting resin, or the like, similar to the first sealing member 150, and is formed to seal the wiring board 210, the wiring terminal portion 220, and the like. Specifically, the second sealing member 230 has a substantially rectangular parallelepiped shape having one surface 230a, another surface 230b opposite to the one surface 230a, and four side surfaces 230c. The second sealing member 230 is formed so that the wiring terminal portion 220 is exposed from the other surface 230b.

[0025] Here, the outer shape of the second module unit 20 is formed by the second sealing member 230. Hereinafter, in the second module unit 20, the surface of the second sealing member 230 on the one surface 230a side will be referred to as the one surface 20a, the surface on the other surface 230b side will be referred to as the other surface 20b, and the surface on the side surface 230c side will be referred to as the side surface 20c.

[0026] The first module unit 10 and the second module unit 20 are stacked with one surface 10a of the first module unit 10 facing the other surface 20b of the second module unit 20, and are integrated via a conductive bonding layer 510 and an insulating bonding layer 520.

[0027] Specifically, the first module unit 10 and the second module unit 20 are stacked such that a portion of the control terminal unit 140 exposed from the first sealing member 150 faces a portion of the wiring terminal unit 220 exposed from the second sealing member 230. A conductive bonding layer 510 that electrically connects the control terminal unit 140 and the wiring terminal unit 220 is disposed between the first module unit 10 and the second module unit 20. An insulating bonding layer 520 is disposed between the first module unit 10 and the second module unit 20 in a portion different from the portion where the conductive bonding layer 510 is disposed.

[0028] The conductive bonding layer 510 is made of, for example, solder, a conductive adhesive, etc. The insulating bonding layer 520 is made of, for example, epoxy resin, etc. The insulating bonding layer 520 is disposed so as to cover a portion of the conductive bonding layer 510 other than the portion connected to the control terminal unit 140 and the wiring terminal unit 220.

[0029] In this embodiment, the first module unit 10 and the second module unit 20 have the following configuration in the stacking direction (hereinafter simply referred to as the stacking direction) of the first module unit 10 and the second module unit 20. In FIG. 1, the stacking direction is the up-down direction on the paper.

[0030] That is, the first module unit 10 and the second module unit 20 are larger than the second module unit 20 in the stacking direction. In other words, the first module unit 10 and the second module unit 20 are sized such that the entire second module unit 20 is located within the first module unit 10 in the stacking direction. In other words, the first module unit 10 and the second module unit 20 are shaped such that the first module unit 10 has a protruding portion protruding from the second module unit 20 in the stacking direction. The insulating bonding layer 520 is disposed between the first module unit 10 and the second module unit 20, and is disposed so as to protrude from the protruding portion of the first module unit 10 protruding from the second module unit 20.

[0031] In this embodiment, the first module unit 10 and the second module unit 20 are configured so that the protruding length of the protruding portion of the first module unit 10 in the stacking direction is approximately constant. In this embodiment, the sizes of the first module unit 10 and the second module unit 20 are adjusted so that the protruding length of the first module unit 10 in the stacking direction is 1 mm or more.

[0032] An air layer 600 is formed between the semiconductor chip 120 of the first module unit 10 and the wiring board 210 of the second module unit 20. In this embodiment, a recess 231 is formed in the other surface 230b of the second sealing member 230 at a portion located between the wiring board 210 and the semiconductor chip 120. The first module unit 10 and the second module unit 20 are integrated so that the recess 231 is closed, thereby forming an air chamber 610 having the air layer 600. Specifically, the air chamber 610 is formed as a space surrounded by the recess 231 and the insulating bonding layer 520. In addition, the air chamber 610 of this embodiment is arranged with the air layer 600 by sealing the atmosphere, and the air layer 600 is a material having a lower thermal conductivity than the first sealing member 150 and the second sealing member 230.

[0033] The above is the configuration of the semiconductor device in this embodiment. Such a semiconductor device is used, for example, to configure an inverter circuit, and when the semiconductor chip 120 generates heat during use, the heat is transferred to the wiring board 210 side as indicated by the arrow A in FIG. 2A. However, in this embodiment, an air layer 600 having a lower thermal conductivity than the first sealing member 150 and the second sealing member 230 is disposed between the semiconductor chip 120 and the wiring board 210. Therefore, the air layer 600 makes it difficult for the heat from the semiconductor chip 120 to be transferred to the wiring board 210, and the wiring board 210 can be prevented from becoming too hot.

[0034] Next, a method for manufacturing the above semiconductor device will be described with reference to FIGS. 3A and 3B.

[0035] First, as shown in Fig. 3A, the first module unit 10 and the second module unit 20 having the above-mentioned configuration are prepared, and the first module unit 10 and the second module unit 20 are appropriately held by a jig or the like. Then, the second module unit 20 is placed on one surface 10a of the first module unit 10 while connecting the control terminal unit 140 of the first module unit 10 and the wiring terminal unit 220 of the second module unit 20 via the conductive bonding layer 510. In this state, a gap is formed in a portion between the first module unit 10 and the second module unit 20 other than the portion where the conductive bonding layer 510 is placed.

[0036] 3B, a component 520a that will be cured to form the insulating bonding layer 520 is prepared. Then, the component 520a is applied so that the component 520a flows into the gap between the first module unit 10 and the second module unit 20 by capillary action. In this embodiment, the component 520a is applied to a predetermined location of a protruding portion of the first module unit 10 that protrudes from the second module unit 20 in the stacking direction using a dispenser or the like, thereby causing the component 520a to flow into the gap between the first module unit 10 and the second module unit 20.

[0037] Thereafter, although not shown, a heat treatment or the like is performed to harden component 520a and form insulating bonding layer 520, thereby manufacturing the semiconductor device shown in FIG.

[0038] According to the present embodiment described above, an air layer 600 having a lower thermal conductivity than the first sealing member 150 and the second sealing member 230 is disposed between the semiconductor chip 120 and the wiring substrate 210. Therefore, the air layer 600 makes it difficult for heat from the semiconductor chip 120 to be transferred to the wiring substrate 210, and it is possible to prevent the wiring substrate 210 from becoming too hot. This improves the reliability of the semiconductor device.

[0039] (1) In this embodiment, the semiconductor chip 120 of the first module unit 10 and the wiring substrate 210 of the second module unit 20 are connected via a conductive bonding layer 510. In addition, the conductive bonding layer 510 is covered with an insulating bonding layer 520. For this reason, the first module unit 10 and the second module unit 20 can be stacked and arranged while being made of different sealing members.

[0040] (2) In this embodiment, the first module unit 10 has a protruding portion that protrudes from the second module unit 20 in the stacking direction. Therefore, the component 520a that constitutes the insulating bonding layer 520 can be easily disposed in the gap between the first module unit 10 and the second module unit 20.

[0041] (3) In this embodiment, the first module unit 10 and the second module unit 20 are sealed by separate sealing members 150, 230, and the first module unit 10 and the second module unit 20 are stacked to form the air layer 600. Therefore, compared to a sealing member in which the first sealing member 150 and the second sealing member 230 are integrated, for example, there is no need to form an air chamber when forming the sealing member, and the mold for forming the sealing member can be prevented from becoming complicated.

[0042] Second embodiment The second embodiment will be described. This embodiment is different from the first embodiment in that the shape of the air chamber 610 is changed. As the rest is similar to the first embodiment, a description thereof will be omitted here.

[0043] 4 and 5, in this embodiment, the air chamber 610 (i.e., the air layer 600) is larger than the semiconductor chip 120 in the stacking direction. Specifically, the size of the recess 231 of the air chamber 610 is adjusted so that the entire semiconductor chip 120 is located inside the air chamber 610 in the stacking direction.

[0044] According to the present embodiment described above, the air layer 600 is disposed between the semiconductor chip 120 and the wiring substrate 210. Therefore, it is possible to obtain the same effects as those of the first embodiment.

[0045] (1) In this embodiment, the air chamber 610 (i.e., the air layer 600) is larger than the semiconductor chip 120 in the stacking direction. This makes it possible to further suppress the transfer of heat from the semiconductor chip 120 to the wiring board 210.

[0046] Third embodiment A third embodiment will be described. In this embodiment, an air chamber 610 is formed on the first module portion 10 side in comparison with the first embodiment. As the rest is similar to the first embodiment, a description thereof will be omitted here.

[0047] 6, in the semiconductor device of this embodiment, the first module unit 10 has a recess 151 formed on one surface 150a of the first sealing member 150. The air chamber 610 is formed by integrating the first module unit 10 and the second module unit 20 via a conductive bonding layer 510 and an insulating bonding layer 520 so that the recess 151 is not blocked. That is, in this embodiment, the air chamber 610 (i.e., the air layer 600) is disposed on the first module unit 10 side.

[0048] In addition, in this embodiment, the first module portion 10 and the second module portion 20 are configured such that the second module portion 20 is larger than the first module portion 10 in the stacking direction. In other words, the first module portion 10 and the second module portion 20 are configured to have a size such that the entire first module portion 10 is located within the second module portion 20 in the stacking direction. In this embodiment, the sizes of the first module portion 10 and the second module portion 20 are adjusted such that the protruding length of the second module portion 20 in the stacking direction is 1 mm or more.

[0049] Next, a method for manufacturing such a semiconductor device will be described with reference to FIGS. 7A and 7B.

[0050] 7A, the first module unit 10 and the second module unit 20 having the above-described configuration are prepared, and the first module unit 10 and the second module unit 20 are appropriately held by a jig or the like. Then, the first module unit 10 is placed on the other surface 20b of the second module unit 20 such that the control terminal unit 140 of the first module unit 10 and the wiring terminal unit 220 of the second module unit 20 are connected via the conductive bonding layer 510.

[0051] 7B, a component 520a is applied to a predetermined location of the protruding portion of the second module portion 20 that protrudes from the first module portion 10 in the stacking direction using a dispenser or the like. Then, the component 520a is caused to flow into the gap between the first module portion 10 and the second module portion 20.

[0052] Thereafter, although not specifically shown, a heat treatment or the like is performed to harden the component 520a, and the first module unit 10 and the second module unit 20 are turned upside down, thereby manufacturing the semiconductor device shown in FIG.

[0053] According to the present embodiment described above, the air layer 600 is disposed between the semiconductor chip 120 and the wiring substrate 210. Therefore, it is possible to obtain the same effects as those of the first embodiment.

[0054] (1) In this embodiment, the air chamber 610 (i.e., the air layer 600) is disposed on the side of the first module unit 10 on which the semiconductor chip 120 is disposed. In other words, the air chamber 610 is disposed in the vicinity of the heat-generating semiconductor chip 120. This makes it easier to quickly block the spread of heat generated from the semiconductor chip 120.

[0055] (Fourth embodiment) A fourth embodiment will be described. In contrast to the first embodiment, this embodiment has a recessed portion formed in the first module portion 10. As the rest is similar to the first embodiment, a description thereof will be omitted here.

[0056] 8, in the semiconductor device of this embodiment, a recess 152 is formed in a portion of one surface 150a of first sealing member 150 that faces recess 231. Specifically, recess 152 has a planar rectangular shape sized so that recess 231 is entirely located within recess 152 in the stacking direction. Therefore, the entire area of ​​opening end 231a of recess 231 faces the bottom surface of recess 152.

[0057] The insulating bonding layer 520 is also disposed inside the recess 152. However, the opening end 231a of the recess 231 in the second sealing member 230 is exposed from the insulating bonding layer 520.

[0058] According to the present embodiment described above, the air layer 600 is disposed between the semiconductor chip 120 and the wiring substrate 210. Therefore, it is possible to obtain the same effects as those of the first embodiment.

[0059] (1) In this embodiment, the recess 152 is formed in the second module unit 20, and the opening end 231a of the recess 231 that constitutes the air chamber 610 is exposed from the insulating bonding layer 520. This makes it possible to suppress variation in the heat insulating effect of the air layer 600 from product to product.

[0060] That is, as described with reference to FIG. 3B above, the semiconductor device is manufactured by flowing the component 520a into the gap between the first module unit 10 and the second module unit 20. In this case, when the component 520a contacts the opening end 231a of the recess 231, the component 520a may creep up the side of the recess 231. When the component 520a creeps up the side of the recess 231, the volume in the air chamber 610 fluctuates, and the heat insulating effect of the air layer 600 varies. For this reason, in this embodiment, the recess 152 is formed so that the component 520a flows into the recess 152, so that the opening end 231a of the recess 231 is exposed from the insulating bonding layer 520. As a result, in this embodiment, the volume of the air chamber 610 is suppressed from varying for each product, and the heat insulating effect of the air layer 600 can be suppressed from varying.

[0061] Fifth embodiment A fifth embodiment will be described. This embodiment is different from the fourth embodiment in that the configuration of the recessed portion 152 is changed. As the rest is similar to the fourth embodiment, a description thereof will be omitted here.

[0062] In the semiconductor device of this embodiment, as shown in FIG. 9, the recessed portion 152 is in the shape of a frame formed in a portion facing the opening end 231a of the recess 231.

[0063] According to the present embodiment described above, the air layer 600 is disposed between the semiconductor chip 120 and the wiring substrate 210. Therefore, it is possible to obtain the same effects as those of the first embodiment.

[0064] (1) As in this embodiment, the same effect as in the fourth embodiment can be obtained even if the recess 152 is frame-shaped and formed in a portion facing the opening end 231a of the recess 231. Furthermore, by forming the recess 152 in a frame shape, the amount of insulating bonding layer 520 that flows into the recess 152 can be reduced compared to the fourth embodiment.

[0065] Sixth embodiment A sixth embodiment will be described. This embodiment is a combination of the third and fourth embodiments. As the rest is the same as the fourth embodiment, a description thereof will be omitted here.

[0066] 10, in the semiconductor device of this embodiment, as in the third embodiment, a recess 151 is formed in the first module unit 10 to configure an air chamber 610. A recess 232 is formed in the second sealing member 230 of the second module unit 20 at a portion of the other surface 20b facing the recess 151. Specifically, the recess 232 has a planar rectangular shape sized so that the entire recess 151 is located within the recess 232 in the stacking direction. Therefore, the entire area of ​​the opening end 151a of the recess 151 formed in the first sealing member 150 faces the bottom surface of the recess 232.

[0067] The insulating bonding layer 520 is also disposed inside the recess 152. The open end 151a of the recess 151 is exposed from the insulating bonding layer 520.

[0068] According to the present embodiment described above, the air layer 600 is disposed between the semiconductor chip 120 and the wiring substrate 210. Therefore, it is possible to obtain the same effects as those of the first embodiment.

[0069] (1) As in this embodiment, even if a recess 232 is formed in the second module unit 20 and the opening end 151a of the recess 151 formed in the first module unit 10 is exposed from the insulating bonding layer 520, the same effect as in the above-described fourth embodiment can be obtained.

[0070] Seventh embodiment A seventh embodiment will be described. This embodiment is different from the first embodiment in that a damming structure is added to the recess 231. As the rest is similar to the first embodiment, a description thereof will be omitted here.

[0071] In the semiconductor device of this embodiment, as shown in FIG. 11, a recess 231 formed in a second sealing member 230 has a protrusion 233 formed at the outer edge of the bottom surface, protruding in the normal direction to the surface direction of the bottom surface. Specifically, the height of the protrusion 233 is adjusted so that the tip surface 233a is recessed from the other surface 230b of the second sealing member 230, and the protrusion 233 is formed in a flat frame shape along the side surface of the recess 231. Then, a storage section 234 is formed between the protrusion 233 and the side surface of the recess 231, and the insulating bonding layer 520 is arranged in the storage section 234. Note that FIG. 11 corresponds to an enlarged view of the XI portion in FIG. 1. In addition, in this embodiment, the protrusion 233 corresponds to a dam structure.

[0072] Such a semiconductor device is manufactured in the same manner as in the first embodiment, and when the component 520a flows through the gap between the first module unit 10 and the second module unit 20, the component 520a comes into contact with the opening end 231a of the recess 231, and creeps up the side of the recess 231. However, in this embodiment, since the accommodation section 234 is configured, the component 520a flows into the accommodation section 234, but is prevented from penetrating beyond the convex portion 233 to the inner edge side. In addition, the height of the convex portion 233 is adjusted so that the tip surface 233a is in a position recessed from the other surface 230b of the second sealing member 230. Therefore, the tip surface 233a of the convex portion 233 does not come into contact with the component 520a, and the component 520a does not creep up the convex portion 233. Therefore, in the semiconductor device of this embodiment, the insulating bonding layer 520 is arranged in the accommodation section 234, but the volume of the air chamber 610 can be prevented from varying from product to product.

[0073] According to the present embodiment described above, the air layer 600 is disposed between the semiconductor chip 120 and the wiring substrate 210. Therefore, it is possible to obtain the same effects as those of the first embodiment.

[0074] (1) In this embodiment, the protrusion 233 is formed in the recess 231. This makes it possible to prevent the component 520a from creeping up to the inner edge side beyond the protrusion 233. This makes it possible to prevent the volume of the air layer 600 from changing from product to product, and thus makes it possible to prevent the heat insulating effect from varying.

[0075] Eighth embodiment An eighth embodiment will be described. This embodiment is different from the first embodiment in that a protrusion is added to the second module portion 20. As the rest is similar to the first embodiment, a description thereof will be omitted here.

[0076] In the semiconductor device of this embodiment, as shown in FIG. 12, the second sealing member 230 has a frame-shaped protrusion 235 formed around the recess 231 on the other surface 230b. The height of the protrusion 235 is adjusted to correspond to the conductive bonding layer 510, and is set to a height that abuts against the one surface 10a of the first module unit 10. The air chamber 610 is formed as a space surrounded by the recess 231, the protrusion 235, and the one surface 10a of the first module unit 10. In other words, the air chamber 610 is sealed by the protrusion 235. In this embodiment, the protrusion 235 corresponds to a dam structure.

[0077] The insulating bonding layer 520 is disposed outside the protrusion 235 between the first module unit 10 and the second module unit 20. In other words, the insulating bonding layer 520 is not disposed inside the air chamber 610.

[0078] According to the present embodiment described above, the air layer 600 is disposed between the semiconductor chip 120 and the wiring substrate 210. Therefore, it is possible to obtain the same effects as those of the first embodiment.

[0079] (1) In this embodiment, the protrusion 235 is formed on the other surface 20b of the second sealing member 230, and the protrusion 235 abuts against the first module unit 10. This makes it difficult for the insulating bonding layer 520 to enter the air chamber 610, and makes it possible to suppress variation in the heat insulating effect of the air layer 600 from product to product.

[0080] (Modification of the eighth embodiment) A modified example of the eighth embodiment will be described. In the eighth embodiment, the protrusion 235 may be formed on the first module unit 10 side. Also, in the eighth embodiment, a recess corresponding to the protrusion 235 may be formed in the first module unit 10, and the protrusion 235 may be inserted into the recess. This makes it easier to align the first module unit 10 and the second module unit 20.

[0081] Ninth embodiment A ninth embodiment will be described. In this embodiment, in contrast to the first embodiment, a lowered portion is formed in the recess 231. As the rest is similar to the first embodiment, a description thereof will be omitted here.

[0082] 13, in the semiconductor device of this embodiment, a lowered portion 236 having a lower wettability with the insulating bonding layer 520 than the second sealing member 230 is formed on the wall surface of the recess 231. The lowered portion 236 is made of, for example, a hydrogen fluoride film. The lowered portion 236 is formed of, for example, a roughened portion obtained by roughening the wall surface of the recess 231 by irradiating the wall surface with a laser or the like.

[0083] According to the present embodiment described above, the air layer 600 is disposed between the semiconductor chip 120 and the wiring substrate 210. Therefore, it is possible to obtain the same effects as those of the first embodiment.

[0084] (1) In this embodiment, the lowered portion 236 is formed on the wall surface of the recess 231. Therefore, when the component 520a constituting the insulating bonding layer 520 is arranged, the component 520a is less likely to creep up the wall surface of the recess 231. Therefore, it is possible to suppress variation in the heat insulating effect of the air layer 600 from product to product.

[0085] Tenth embodiment A tenth embodiment will be described. In this embodiment, in contrast to the ninth embodiment, a lowered portion is also formed in the first module portion 10. As the rest is similar to the ninth embodiment, a description thereof will be omitted here.

[0086] 14, in the semiconductor device of this embodiment, a lowered portion 153 having a lower wettability with the insulating bonding layer 520 than the first sealing member 150 is formed in a portion of one surface 150a of the first sealing member 150 facing the recessed portion 231. The lowered portion 153 formed in the first sealing member 150 is formed of a hydrogen fluoride film or a roughened portion roughened by laser irradiation or the like, similar to the lowered portion 236 formed in the second sealing member 230.

[0087] According to the present embodiment described above, the air layer 600 is disposed between the semiconductor chip 120 and the wiring substrate 210. Therefore, it is possible to obtain the same effects as those of the first embodiment.

[0088] (1) In this embodiment, the lowered portion 153 is also formed on the portion of the surface 150a of the first sealing member 150 that faces the recessed portion 231. Therefore, when the component 520a that constitutes the insulating bonding layer 520 is disposed, the component 520a is less likely to creep up the wall surface of the recessed portion 231. This can further suppress variation in the heat insulating effect of the air layer 600 from product to product.

[0089] Eleventh embodiment An eleventh embodiment will be described. This embodiment is different from the first embodiment in that the configuration of the air layer 600 is changed. As the rest is similar to the first embodiment, a description thereof will be omitted here.

[0090] In the semiconductor device of this embodiment, as shown in FIG. 15, a porous member 620 having an air layer 600 is arranged between the first module unit 10 and the second module unit 20, in the portion between the semiconductor chip 120 and the wiring substrate 210.

[0091] The porous member 620 is made of, for example, glass wool, and the air layer 600 is made of air contained inside the porous member 620. In this embodiment, the porous member 620 corresponds to an air layer inclusion. Note that, it is preferable that the portion of the porous member 620 different from the air layer 600 is made of a material having a lower thermal conductivity than the first sealing member 150 and the second sealing member 230.

[0092] The above is the configuration of the semiconductor device in this embodiment. Next, a method for manufacturing the semiconductor device will be described with reference to Figures 16A and 16B.

[0093] 16A, a porous member 620 is placed on a portion of one surface 10a of the first module unit 10 facing the semiconductor chip 120 via a component 520a. Then, a heat treatment or the like is performed to harden the component 520a to form an insulating bonding layer 520, thereby fixing the porous member 620. The thickness of the porous member 620 is adjusted so that it abuts against the other surface 20b of the second module unit 20.

[0094] 16B, the control terminal section 140 of the first module section 10 and the wiring terminal section 220 of the second module section 20 are connected via the conductive bonding layer 510, and the second module section 20 is placed on one surface 10a of the first module section 10. At this time, the porous member 620 is in contact with the other surface 20b of the second module section 20.

[0095] Thereafter, although not specifically shown, component 520a is caused to flow into the gap between first module portion 10 and second module portion 20, and component 520a is hardened to form insulating bonding layer 520, thereby manufacturing the semiconductor device shown in FIG. 15.

[0096] According to the present embodiment described above, the air layer 600 is disposed between the semiconductor chip 120 and the wiring substrate 210. Therefore, it is possible to obtain the same effects as those of the first embodiment.

[0097] (1) As in this embodiment, the air layer 600 may be composed of a porous member 620. By disposing the porous member 620 in this manner, it becomes unnecessary to form the recess 231 in the second sealing member 230.

[0098] (Modification of the eleventh embodiment) A modified example of the eleventh embodiment will be described below. In the eleventh embodiment, the air layer-containing object may be made of acrylic or epoxy resin, and may be made of a box-shaped case or the like having the air layer 600 therein.

[0099] Twelfth embodiment A twelfth embodiment will be described. This embodiment is different from the first embodiment in that the configuration of the air layer 600 is changed. As the rest is similar to the first embodiment, a description thereof will be omitted here.

[0100] In the semiconductor device of this embodiment, as shown in Fig. 17, a porous portion 631 including an air layer 600 is formed on one surface 10a of the first module unit 10. Similarly, a porous portion 632 including an air layer 600 is formed on the other surface 20b of the second module unit 20. Such porous portions 631, 632 are formed as roughened portions formed by performing roughening treatment such as laser irradiation. In this case, when a filler or the like is mixed in the first sealing member 150 and the second sealing member 230, gaps from which the filler or the like is removed by performing the roughening treatment also become the air layer 600.

[0101] According to the present embodiment described above, the air layer 600 is disposed between the semiconductor chip 120 and the wiring substrate 210. Therefore, it is possible to obtain the same effects as those of the first embodiment.

[0102] (1) As in this embodiment, the air layer 600 may be composed of porous portions 631 and 632.

[0103] (Modification of the twelfth embodiment) A modification of the twelfth embodiment will be described below. The porous portions 631, 632 may be formed in either the first module portion 10 or the second module portion 20.

[0104] Thirteenth embodiment A thirteenth embodiment will be described. This embodiment differs from the first embodiment in that a communication passage is formed. As the rest of the configuration is the same as the first embodiment, a description thereof will be omitted here.

[0105] 18 and 19, in the semiconductor device of this embodiment, a communication path 237 communicating with the recess 231 is formed in the second sealing member 230. Specifically, the communication path 237 is formed so as to reach the side surface 230c of the second sealing member 230. Therefore, the air chamber 610 is in communication with the external space. Note that FIG. 18 is a cross-sectional view taken along the line XVIII-XVIII in FIG. 19.

[0106] According to the present embodiment described above, the air layer 600 is disposed between the semiconductor chip 120 and the wiring substrate 210. Therefore, it is possible to obtain the same effects as those of the first embodiment.

[0107] (1) In this embodiment, the air chamber 610 is connected to the outside space via the communication passage 237. This makes it possible to prevent extra stress from being applied to the air chamber 610 due to the expansion or compression of the air layer 600 caused by the temperature of the usage environment.

[0108] (Other embodiments) Although the present disclosure has been described based on the embodiment, it is understood that the present disclosure is not limited to the embodiment or structure. The present disclosure also encompasses various modifications and modifications within the equivalent range. In addition, various combinations and forms, as well as other combinations and forms including only one element, more than one element, or less than one element, are also within the scope and concept of the present disclosure.

[0109] For example, in each of the above embodiments, the configuration of the first support member 110 and the second support member 130 can be changed as appropriate, and may be configured with an AMB (abbreviation for Active Metal Brazing) substrate or the like.

[0110] In each of the above embodiments, the first module section 10 and the second module section 20 may have the same size in plan view.

[0111] The above-mentioned respective embodiments may be appropriately combined. For example, when a semiconductor device having an air chamber 610 is to be formed, the second embodiment may be appropriately combined to enlarge the air chamber 610. When a semiconductor device having an air chamber 610 is to be formed, the fourth to sixth embodiments may be appropriately combined to form the recessed portions 152, 232. When a semiconductor device having an air chamber 610 is to be formed, the seventh to tenth embodiments may be appropriately combined to form a dam structure. When a semiconductor device having an air chamber 610 is to be formed, the thirteenth embodiment may be appropriately combined to form the communication passage 237. [Explanation of symbols]

[0112] 10 First module section 20 Second module section 120 Semiconductor Chips 150 First sealing member 210 Wiring board 230 Second sealing member 510 Conductive bonding layer 520 Insulating bonding layer 600 Air Layer

Claims

1. A semiconductor device comprising: A first module portion (10) in which a semiconductor chip (120) on which a semiconductor element is formed is sealed with a first sealing member (150); a second module portion (20) in which a wiring substrate (210) electrically connected to the semiconductor chip is sealed with a second sealing member (230); The first module unit and the second module unit are arranged in a stacked manner, a conductive bonding layer (510) disposed between the first module portion and the second module portion and electrically connecting a terminal portion (140) connected to the semiconductor chip and a terminal portion (220) connected to the wiring substrate; an insulating bonding layer (520) disposed between the first module portion and the second module portion; A semiconductor device, comprising: a layer of air (600) having a lower thermal conductivity than the first sealing member and the second sealing member, disposed between the semiconductor chip and the wiring board.

2. The semiconductor device according to claim 1 , wherein a portion of the conductive adhesive layer other than a portion connected to the terminal portion is covered with the insulating adhesive layer.

3. one of the first module unit and the second module unit has a protruding portion protruding from the other module unit in a stacking direction of the first module unit and the second module unit, The semiconductor device according to claim 1 , wherein the insulating bonding layer is also disposed on the protruding portion.

4. a recess (151, 231) is formed on one of a surface (10a) of the first module portion facing the second module portion and a surface (20b) of the second module portion facing the first module portion; 4. The semiconductor device according to claim 1, wherein the air layer is a space within an air chamber (610) configured to include a space within the recess.

5. 5. The semiconductor device according to claim 4, wherein the air chamber is sized to include the semiconductor chip therein in a stacking direction of the first module section and the second module section.

6. a recess (152, 232) is formed at a position facing an opening end (151a, 231a) of the recess on the other surface of the first module portion on the second module portion side and the other surface of the second module portion on the first module portion side, The insulating adhesive layer is also disposed within the recessed portion, The semiconductor device according to claim 4 , wherein an open end of the recess is exposed from the insulating bonding layer.

7. In the module section in which the recess is formed, a flat frame-shaped convex section (233) having a tip surface (233a) at a position recessed from the surface in which the recess is formed is formed on a bottom surface of the recess, and a storage section (234) is formed between the convex section and a side surface of the recess, The semiconductor device according to claim 4 , wherein the insulating bonding layer is also disposed in the housing portion.

8. 5. The semiconductor device according to claim 4, wherein a protrusion (235) is formed on one of a surface of the first module part facing the second module part and a surface of the second module part facing the first module part, the protrusion having a frame shape surrounding the recess in a stacking direction of the first module part and the second module part and sealing the air chamber.

9. 5. The semiconductor device according to claim 4, wherein a lowered portion (236) having a lower wettability with respect to the insulating bonding layer than the sealing member is formed on a wall surface of the recess.

10. 5. The semiconductor device according to claim 4, wherein a communication passage (237) that communicates between the recess and an external space is formed in the module portion in which the recess is formed.

11. 2. The semiconductor device according to claim 1, wherein an air layer inclusion (620) containing the air layer is disposed between the first module portion and the second module portion.

12. 2. The semiconductor device according to claim 1, wherein a porous portion (631, 632) containing the air layer is formed on at least one of a surface (10a) of the first module portion facing the second module portion and a surface (20b) of the second module portion facing the first module portion.

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