Liquid crystal display device

Abstract

To provide a thin display device capable of low-power consumption drive and suitable for high definition, and a method for manufacturing the same.SOLUTION: A display device includes a reflective liquid crystal element. A liquid crystal layer has a first portion overlapping with a reflective electrode that reflects visual light and blocks external light and a second portion overlapping with a region between two adjacent reflective electrodes. The first portion includes a monomer and a liquid crystal. The second portion includes a polymer with a polymerized monomer. In the second portion, the polymer forms a framework of a columnar partition wall that bonds a pair of substrates. The partition wall can be formed self-consistently by using the reflective electrode as a light-shielding mask during light irradiation. The polymer is disposed so as to mate with a recess in an insulation layer where the reflective electrode is provided.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a display device. One embodiment of the present invention relates to a manufacturing method of a display device. In particular, one embodiment of the present invention relates to a display device having a liquid crystal element and a manufacturing method of the display device. do.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a power storage device, a storage device, and a , electronic device, lighting device, input device, input / output device, driving method thereof, or manufacturing method thereof The law can be cited as one example.

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. This refers to devices in general. Transistors, semiconductor circuits, arithmetic units, memory devices, etc. are all types of semiconductor devices. In addition, it is also used in imaging devices, electro-optical devices, power generation devices (thin-film solar cells, organic thin-film solar cells, etc.) etc.), and electronic devices may include semiconductor devices. [Background technology]

[0004] One type of display device is a liquid crystal display device that includes a liquid crystal element. The transistors are arranged in a trix shape and used as switching elements connected to each pixel electrode. Active matrix liquid crystal display devices using such a liquid crystal display device have been attracting attention.

[0005] For example, a metal oxide channel-type switching element is used to connect to each pixel electrode. Active matrix liquid crystal display devices using transistors with a region (Patent Document 1 and Patent Document 2)

[0006] Active matrix LCD devices are broadly divided into two types: transmissive and reflective. It is known that

[0007] Transmissive LCD devices use cold cathode fluorescent lamps and LEDs (Light Emitting Diodes). The backlight is a liquid crystal backlight, and the optical modulation effect of the liquid crystal is used to create a backlight. The light from the light source passes through the liquid crystal and is output to the outside of the liquid crystal display device, and the light is not output. By selecting the two, light and dark are displayed, and then combining them, an image is displayed. It is something.

[0008] In addition, a reflective liquid crystal display device utilizes the optical modulation effect of liquid crystal to reflect external light, i.e., incident light, A state in which the light is reflected by the pixel electrode and output to the outside of the device, and a state in which the incident light is not output to the outside of the device By selecting the light and dark, and combining them, you can display the image. The reflection type liquid crystal display device has a backlight, which is smaller than the transmission type liquid crystal display device. Since it does not use a power supply, it has the advantage of consuming less power. [Prior art documents] [Patent documents]

[0009] [Patent Document 1] JP 2007-123861 A [Patent Document 2] JP 2007-96055 A Summary of the Invention [Problem to be solved by the invention]

[0010] There is a demand for clearer images to be displayed on display devices. There is a demand for high-definition display devices.

[0011] In particular, mobile phones, smartphones, tablet devices, smart watches, etc. In the future, the display devices to be incorporated in these devices will be thinner, lighter, and more power-efficient. It is required that it be movable.

[0012] An object of one embodiment of the present invention is to provide a display device suitable for high resolution and a manufacturing method thereof. Another object of the present invention is to provide a display device that can be driven with low power consumption. Another object of the present invention is to provide a thin display device. One object of the present invention is to provide an apparatus.

[0013] Another object of one embodiment of the present invention is to improve the display quality of a display device. One of the objectives is to display images with high display quality regardless of the usage environment.

[0014] The description of these problems does not preclude the existence of other problems. It is not necessary to solve all of these problems. It is possible to extract issues other than those mentioned above. [Means for solving the problem]

[0015] One embodiment of the present invention is a display device having a first electrode, a liquid crystal layer, a light-shielding layer, and an insulating layer. The first electrode has a function of reflecting visible light and blocking ultraviolet light, and is disposed on the insulating layer. The liquid crystal layer is provided in a first portion overlapping the first electrode and surrounding a part of the first portion. and a second portion that is overlapped with the light-shielding layer. The first portion is a monolithic The second portion includes a polymer formed by polymerizing the monomer. It is a sign.

[0016] One aspect of the present invention is a liquid crystal display device comprising a first electrode, a second electrode, a liquid crystal layer, a light-shielding layer, and an insulating layer. The first electrode and the second electrode each reflect visible light and are arranged to reflect ultraviolet light. The first electrode and the second electrode are spaced apart from each other and are disposed on an insulating layer. The insulating layer has a recess, and the first electrode and the second electrode are disposed at positions not overlapping the recess. The light-shielding layer has a portion between the first electrode and the second electrode and a portion overlapping the recess. The liquid crystal layer has a first portion and a second portion, and the first portion overlaps the first electrode. The second portion overlaps the area between the first electrode and the second electrode, the recess, and the light-shielding layer. The first portion includes a monomer and a liquid crystal, and the second portion includes a polymer formed by polymerizing the monomer.

[0017] It is also preferable that the polymer has an insulating structure in contact with the polymer. It is preferable that the light shielding layer and the recess have a portion overlapping the light shielding layer and the recess.

[0018] It is also preferable that the liquid crystal display device has a third electrode overlapping the first electrode with a liquid crystal layer therebetween. The third electrode preferably has a function of transmitting visible light. a first alignment film covering the second electrode and a second alignment film covering the third electrode; is preferably provided in contact with each of the first alignment film and the second alignment film. In addition, at this time, the structural body is provided in contact with the first alignment film or the second alignment film. It is preferable.

[0019] In the above, it is preferable that the device has a first substrate and a second substrate. The first electrode and the second electrode are located between the first substrate and the liquid crystal layer, and the light-shielding layer is located between the second substrate and the liquid crystal layer. and the liquid crystal layer. It is preferable that the material is flexible.

[0020] In the above, it is preferable that the insulating layer has a light-emitting element. The light-emitting element is disposed between the insulating layer and the liquid crystal element. The light-emitting element is connected to a fourth electrode that transmits visible light from the insulating layer side. The light-emitting element has a laminated structure of a first electrode, a layer containing a light-emitting substance, and a fifth electrode. It is preferable that the light emitting element has a function of emitting light. In this case, the light emitting element is electrically connected to the first electrode and It is preferable to have a conductive film that transmits visible light.

[0021] In the above, a first transistor electrically connected to the first electrode and a fourth transistor and a second transistor electrically connected to the first electrode. The first transistor and the second transistor are preferably provided on the same surface. Alternatively, the first transistor and the second transistor are provided on different surfaces. is preferred.

[0022] In another aspect of the present invention, an insulating layer is formed on a first substrate, A first electrode and a second electrode each having a function of reflecting visible light and blocking ultraviolet light, A first step of forming a first insulating layer that is spaced apart from the first electrode and the second electrode and does not overlap the first insulating layer. A second step of etching a part of the substrate to form a recess; and forming a light-shielding layer on the second substrate. The third step is to form a first substrate and a second substrate, and a liquid crystal, a monomer and a polymerization initiator are formed on the first substrate and the second substrate. A fourth step of sandwiching a liquid crystal layer containing an adhesive between the first and second substrates and bonding the first and second substrates together; In the area not shielded by the first electrode and the second electrode, the monomer in the liquid crystal layer is polymerized. A method for manufacturing a display device, comprising the steps of:

[0023] Another aspect of the present invention is a first step of forming a first insulating layer on a first support substrate. The step and the first insulating layer are provided with a function of reflecting visible light and blocking ultraviolet light. A second step of forming a first electrode and a second electrode spaced apart from each other, and forming a first insulating layer A part of the portion that does not overlap with the first electrode and the second electrode is etched to form a recess. a fourth step of forming a second insulating layer on the second support substrate; A fifth step of forming a light-shielding layer on the insulating layer; and a fifth step of forming a first support substrate and a second support substrate. a sixth step of sandwiching and bonding a liquid crystal layer containing a liquid crystal, a monomer, and a polymerization initiator; The light is irradiated from the supporting substrate side of the first electrode, and the light is not blocked by the first electrode and the second electrode. a seventh step of polymerizing the monomer in the liquid crystal layer; and a seventh step of forming a first support substrate and a first insulating layer. and bonding a third substrate to the first insulating layer via the first adhesive layer. The second insulating layer is adhered to the second support substrate via the second adhesive layer. and a ninth step of attaching a fourth substrate to the first substrate.

[0024] In another aspect of the present invention, a third support substrate is provided with a transparent substrate, the third support substrate being provided with a transparent substrate that reflects visible light and is also capable of reflecting ultraviolet light. A first electrode and a second electrode having a function of blocking external light, and a first electrode and a second electrode A first step of forming a third insulating layer covering the first electrode, and forming an opening in the third insulating layer that reaches the first electrode. A second step of forming an opening and a first electrode electrically connecting the first electrode on the third insulating layer. A third step of forming a conductive layer and a fourth electrode that transmits visible light; a fourth step of laminating a layer containing a light-emitting substance and a fifth electrode on the first electrode; a fifth step of bonding a first substrate to the electrode via a third adhesive layer; The third support substrate and the fourth insulating layer are peeled off to expose a part of the first electrode and the second electrode. a sixth step of forming a fourth insulating layer on a portion of the fourth insulating layer that does not overlap with the first electrode and the second electrode; A seventh step of etching the portion to form a recess; and forming a light-shielding layer on the second substrate. and an eighth step of bonding the first substrate and the second substrate to a liquid crystal, a monomer, and a polymerization initiator. The ninth step is to sandwich the liquid crystal layer and bond the two together, and to irradiate light from the first substrate side to form a first electrode. and a tenth step of polymerizing a monomer in the liquid crystal layer in an area not shielded by the second electrode. The method for manufacturing a display device includes the steps of:

[0025] Another embodiment of the present invention is a liquid crystal display device including: a fourth electrode that transmits visible light over a fourth support substrate; A first step of forming a fifth insulating layer covering the fourth electrode, and a fourth electrode is formed on the fifth insulating layer. A second step of forming an opening reaching the fourth electrode on the fifth insulating layer, A second conductive layer that connects the two layers, and the functions of reflecting visible light and blocking ultraviolet light, respectively. a third step of forming a first electrode and a second electrode having a fifth insulating layer; A fourth step is formed by etching a part of the portion that does not overlap the first electrode and the second electrode to form a recess. a fifth step of forming a light-shielding layer on the second substrate; and a fourth step of forming a fourth support substrate and the second substrate. A sixth step of bonding the substrates with a liquid crystal layer containing liquid crystal, a monomer and a polymerization initiator sandwiched therebetween. and a region that is not blocked by the first electrode and the second electrode. A seventh step of polymerizing the monomer in the liquid crystal layer, and a fourth support substrate and a fifth An eighth step of peeling between the insulating layers to expose a portion of the fourth electrode and covering the fourth electrode. and a ninth step of forming a layer containing a light-emitting material and a fifth electrode in that order. A method for manufacturing a display device.

[0026] In another aspect of the present invention, a fifth support substrate is provided with a transparent substrate, the fifth support substrate being provided with a transparent substrate that reflects visible light and is also capable of reflecting ultraviolet light. A first electrode and a second electrode having a function of blocking external light, and a first electrode and a second electrode A first step of forming a sixth insulating layer covering the fifth support substrate and a second step of forming a peeling layer between the fifth support substrate and the sixth insulating layer. a second step of removing the sixth insulating layer from the first electrode and the second electrode to expose a portion of the sixth insulating layer; A part of the portion that does not overlap with the first electrode and the second electrode is etched to form a recess. A fourth step of forming a light-shielding layer on the second substrate, and a sixth step of forming an insulating layer. A fifth step is performed by bonding a second substrate to the liquid crystal layer containing liquid crystal, a monomer, and a polymerization initiator. The step is irradiated with light from the sixth insulating layer side, and the area that is not blocked by the first electrode and the second electrode is A sixth step of polymerizing the monomer in the liquid crystal layer in the liquid crystal region; a seventh step of laminating the first electrode, the layer containing a light-emitting material, and the fifth electrode; and (eighth) bonding the substrate and the first substrate together via a fourth adhesive layer. The present invention relates to a method for manufacturing a display device. Effect of the Invention

[0027] According to one embodiment of the present invention, a display device suitable for high resolution and a manufacturing method thereof can be provided. Alternatively, a display device that can be driven with low power consumption can be provided. Alternatively, a thin display device can be provided. Alternatively, a lightweight display device can be provided.

[0028] Note that one embodiment of the present invention does not necessarily have all of these effects. Other effects can be extracted from the detailed description, drawings, claims, etc. [Brief description of the drawings]

[0029] [Figure 1] 1 shows a configuration example of a display device according to an embodiment. [Diagram 2] 3 shows a configuration example of a touch panel according to an embodiment. [Diagram 3] 1 shows a configuration example of a display device according to an embodiment. [Figure 4] 1 shows a configuration example of a display device according to an embodiment. [Diagram 5] 1 shows a configuration example of a display device according to an embodiment. [Figure 6] 1 shows a configuration example of a display device according to an embodiment. [Figure 7] 1 shows a configuration example of a display device according to an embodiment. [Figure 8] 1 shows a configuration example of a display device according to an embodiment. [Figure 9] 1 shows a configuration example of a display device according to an embodiment. [Figure 10] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 11] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 12] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 13] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 14] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 15] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 16]1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 17] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 18] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 19] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 20] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 21] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 22] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 23] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 24] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Diagram 25] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 26] 1 shows a configuration example of a display device according to an embodiment. [Figure 27] 1 shows a configuration example of a display device according to an embodiment. [Figure 28] 1 shows a configuration example of a display device according to an embodiment. [Figure 29] 1 shows a configuration example of a display device according to an embodiment. [Diagram 30] 1 shows a configuration example of a display device according to an embodiment. [Diagram 31] 1 shows a configuration example of a display device according to an embodiment. [Diagram 32] 3 shows an example of a transistor configuration according to the embodiment. [Diagram 33] 1 shows a configuration example of a display device according to an embodiment. [Diagram 34] 1 is a circuit diagram of a display device according to an embodiment. [Diagram 35] 1A and 1B are a circuit diagram and a configuration example of a pixel of a display device according to an embodiment. [Diagram 36] 3 shows a configuration example of a display module according to the embodiment. [Figure 37] 1A to 1C are diagrams illustrating examples of electronic devices and lighting devices according to an embodiment. [Figure 38] 1A to 1C are diagrams illustrating examples of electronic devices according to an embodiment. [Figure 39] 1A to 1C are diagrams illustrating examples of electronic devices according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0030] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the present invention can be realized by the following embodiments. The present disclosure should not be construed as being limited to the contents of the preceding paragraph.

[0031] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and the repeated explanations are omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be used.

[0032] In each figure described in this specification, the size, layer thickness, or area of ​​each component is indicated by the following formula: The figures may be exaggerated for clarity and are not necessarily limited to scale. stomach.

[0033] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The numbers are added for the purpose of convenience and are not intended to be limiting.

[0034] A transistor is a type of semiconductor device that controls the amplification of current or voltage and the conduction or non-conduction of electricity. In this specification, the transistor can realize a switching operation that controls the , IGFET(Insulated Gate Field Effect Trans istor) and thin film transistor (TFT: Thin Film Transistor ).

[0035] (Embodiment 1) In this embodiment, a configuration example of a display device according to one embodiment of the present invention and a manufacturing method of the display device will be described. We will explain about this.

[0036] A display device according to one embodiment of the present invention includes a plurality of reflective liquid crystal elements. At least one of the pair of electrodes has a function of reflecting visible light and ultraviolet light. The liquid crystal layer is placed between a pair of substrates. It can be established.

[0037] The liquid crystal layer is provided with an electrode (hereinafter referred to as a reflective electrode) that reflects the visible light and blocks ultraviolet light. a first portion overlapping the region between adjacent two reflective electrodes, and a second portion overlapping the region between adjacent two reflective electrodes. The first portion includes a monomer and a liquid crystal, and the second portion includes the monomer polymerized. In the second portion, the polymer comprises a columnar spacing that bonds the pair of substrates. The second portion is provided to suppress color mixing between adjacent pixels. It is preferable that the second portion is disposed so as to overlap with the light-shielding layer. Alternatively, the columnar partition walls may contain a polymer and a liquid crystal.

[0038] The columnar partition wall containing a polymer, which is provided in the second portion of the liquid crystal layer, separates two adjacent liquid crystals. It is placed between the elements and has the function of separating the liquid crystal layers of the two liquid crystal elements. The columnar partitions containing polymers can also be called polymer walls. In the first portion, the liquid crystal is surrounded by the partition wall and the pair of substrates. The partitions make it difficult for the liquid crystal alignment state of the adjacent liquid crystal element to be affected. This improves contrast and makes it possible to realize a display device capable of providing a more vivid display. Note that the liquid crystal of one liquid crystal element does not need to be completely separated from the liquid crystal of the adjacent liquid crystal element. However, if there is at least one partition between two adjacent liquid crystal elements, Good.

[0039] When manufacturing a display device according to one embodiment of the present invention, a liquid crystal layer sandwiched between a pair of substrates contains a liquid crystal and A material containing a monomer and a polymerization initiator is used. Then, light is irradiated onto a part of the liquid crystal layer. By this, the monomer is polymerized and changes into a polymer. By using it as a mask, the polymer is formed in the area of ​​the liquid crystal layer that does not overlap with the reflective electrode. As a result, the partition wall containing the polymer, which is located between the adjacent reflective electrodes, is formed by using a light-shielding mask or the like. It can be formed in a self-aligning manner without the need for a gate.

[0040] In the display device according to one embodiment of the present invention, a partition wall containing a polymer for bonding a pair of substrates is disposed between adjacent pixels. Since it is possible to place the partition between the substrates, the adhesive strength between the substrates is extremely high. It can also function as a gap spacer to maintain the distance between the substrates. Therefore, when the display surface is pressed or external force is applied to the display device, or when the display device is vibrated, When the liquid crystal element is turned on, the cell gap is unlikely to change, so the cell gap may change. This makes it difficult for interference fringes and color changes to occur.

[0041] In addition, by using the above-mentioned method, the area not shielded by the reflective electrode, i.e., the reflective liquid crystal element, This allows the polymer to be self-aligned in areas that do not affect the display using the polymer. For example, compared to forming a polymer using a light-shielding mask, it is possible to form a partition wall having a smaller diameter. This makes it possible to arrange the pixels at high density. This makes it possible to manufacture extremely high-definition display devices. For example, if the resolution of the display is 300ppi or more, or 500ppi or more, Or 800ppi or more, or 1000ppi or more but less than 3000ppi The present invention can also be applied to high-definition display devices.

[0042] The reflective electrode is provided on the insulating layer. In the region where the insulating layer is formed, a recess is preferably formed in the insulating layer. The height of the upper surface of the portion not overlapping with the reflective electrode is lower than that of the portion overlapping with the reflective electrode. The insulating layer has a region, or a portion of its upper surface is closer to the substrate surface than other portions. This can also be rephrased as having, etc.

[0043] Here, the columnar partition is preferably provided at a position overlapping with the recess of the insulating layer. For example, it is preferable that a columnar partition is provided so as to fit into a recess in the insulating layer. This increases the area of ​​the adhesive surface on the insulating layer side of the columnar partition wall, improving the adhesive strength between the substrates. It can be improved.

[0044] In addition, the first substrate side or the second substrate side has a convex structure in contact with the columnar partition wall. The convex structure is preferably a gap for maintaining a distance between a pair of substrates. A structure that functions as a spacer can be used. The adhesive surface area of ​​the columnar partition walls is increased by being in contact with each other, which creates an anchor effect. In particular, the adhesive strength can be further increased by forming a convex structure on the inside of the columnar partition wall. When the substrate is located at the position, the adhesive strength between the substrates can be increased more effectively.

[0045] In addition, when the insulating layer has a recess formed therein, the protruding structure is disposed at a position overlapping the recess. In the case where both the recessed portion and the protruding portion of the insulating layer are provided, By providing columnar partitions in the parts, the anchor effect is strengthened and the adhesive strength between the substrates is improved. It can be increased exponentially.

[0046] In addition, one embodiment of the present invention has both a reflective display element and a light-emitting element, and A display device (display panel) capable of displaying in reflective and hybrid modes. Such a display panel is preferably an ER-Hybrid Display. ay(Emission and Reflection Hybrid Display y, or Emission / Reflection Hybrid Display ) can also be called.

[0047] In this specification, the hybrid display (hybrid mode) refers to a display in one panel. In this case, the reflected light and the self-luminous light are used together to complement each other in color tone or light intensity, and the characters or A hybrid display is a method of displaying an image using the same pixel or the same subpixel. A method for displaying characters or images using light from a plurality of display elements in a single device. However, when looking locally at a hybrid display that is performing hybrid display, Then, a pixel or sub-pixel displayed using any one of the plurality of display elements and a pixel or sub-pixel displayed using any one of the plurality of display elements are and a pixel or sub-pixel that is displayed using two or more of the elements.

[0048] In this specification, etc., the term "component" refers to a component that satisfies one or more of the above-mentioned expressions. This is called a hybrid display.

[0049] Hybrid displays also have multiple display elements in the same pixel or subpixel. The display elements may be, for example, reflective elements that reflect light and transparent elements that emit light. The reflective element and the self-luminous element are controlled independently. The hybrid display uses reflected light and spontaneous emission in the display area. It has the function of displaying characters or images using either or both of the lights.

[0050] A configuration example and a manufacturing method example of a display device according to one embodiment of the present invention will be described below with reference to the drawings. This will be explained in light of the above.

[0051] In the following, expressions indicating directions such as "up" and "down" basically correspond to the directions in the drawings. However, for ease of explanation and other purposes, The orientation of "up" or "down" may not be consistent with the drawings. When explaining the stacking order (or formation order) of a laminate, etc., The surface to be bonded (the surface to be formed, the supporting surface, the adhesive surface, the flat surface, etc.) is located above the laminate. Even if the object is placed in a certain position, the direction may be described as "down" and the opposite direction as "up."

[0052] [Configuration example 1] FIG. 1(A) is a perspective schematic diagram of a display device 10 according to one embodiment of the present invention. The substrate 21 and the substrate 31 are bonded together. In FIG. 1A, the substrate 31 is indicated by a dashed line. It is stated explicitly in.

[0053] The display device 10 includes a display unit 32, a circuit 34, wiring 35, etc. The substrate 21 includes, for example, A circuit 34, a wiring 35, and a conductive layer 23 included in the display portion 32 and functioning as a pixel electrode are provided. FIG. 1(A) shows an example in which an IC 37 and an FPC 36 are mounted on a substrate 21. Therefore, the structure shown in FIG. 1(A) can also be called a display module. .

[0054] The circuit 34 can be, for example, a circuit that functions as a scanning line driver circuit.

[0055] The wiring 35 has a function of supplying signals and power to the display unit 32 and the circuit 34. Power is input from the outside to wiring 35 via FPC 36 or from IC 37 It is entered as 35.

[0056] In FIG. 1A, the substrate 2 is formed by a COG (Chip On Glass) method or the like. In the example shown, IC 37 is provided in the semiconductor device 1. IC 37 is, for example, a signal line driver circuit. In addition, the display device 10 may be applied with an IC that functions as a signal line driver circuit. In some cases, a circuit that functions as a signal line driver circuit is provided externally, and the FPC36 In the case where a signal for driving the display device 10 is input via the Also, the IC 37 may be configured in a COF (Chip On Film) manner or the like. Therefore, it may be mounted on FPC36.

[0057] FIG. 1A shows an enlarged view of a part of the display unit 32. The display unit 32 has a plurality of displays. The conductive layer 23 of the display element is arranged in a matrix. The conductive layer 23 functions as an electrode. Here, the conductive layer 23 has a function of reflecting visible light and blocking ultraviolet light. Possesses the ability.

[0058] FIG. 2 shows an example of a touch panel 10a having a display device 10. In FIG.

[0059] The touch panel 10a has a touch sensor panel 15 provided on the display surface side. Between the display device 10 and the touch sensor panel 15, a diffusion plate 38 and a polarizing plate 39 are provided from the display device 10 side. and an optical plate 39.

[0060] The diffusion plate 38 can be suitably made of a film having a function of diffusing visible light. For example, a film on which a hemispherical lens or a microlens array is formed, or a film on which a concave-convex structure is formed For example, the substrate 31 or the film may be used. Such a film is attached to the display device 10 using an adhesive or the like having a refractive index similar to that of the film. By bonding the light, a light extraction structure can be formed.

[0061] The polarizing plate 39 may be, for example, a linear polarizing plate or a circular polarizing plate. When 32 has a reflective liquid crystal element, a circular polarizer can be suitably used. The optical plate may be, for example, a laminate of a linear polarizing plate and a quarter-wave retardation plate. By using a circular polarizing plate, it is possible to effectively suppress the reflection of external light. Cut.

[0062] The touch sensor panel 15 detects a touch or approach of a detection object such as a finger or a stylus. It also has a function to output the position information of the detected object. FIG. 2 shows an example in which an FPC 16 is mounted on a touch sensor panel 15. The touch sensor panel 15 or the FPC 16 is connected to the driving circuit of the touch sensor panel 15. A function to control the touch sensor panel 15 and a function to calculate position information from the signal from the touch sensor panel 15. An IC having the above may be implemented.

[0063] The touch sensor panel 15 has a detection element (also called a sensor element) that detects a finger or a stamp. When a detection target such as an illustration touches or approaches the surface of the touch sensor panel 15 Various sensors capable of detecting the above-mentioned phenomenon can be applied.

[0064] For example, the sensor types include capacitance type, resistive film type, surface acoustic wave type, infrared type, etc. Various methods can be used, such as a pressure-sensitive method, an optical method, or a pressure-sensitive method.

[0065] The capacitance type includes the surface capacitance type and the projected capacitance type. The shadow type capacitance method includes the self-capacitance method and the mutual capacitance method. This is preferable because it enables simultaneous multi-point detection.

[0066] In FIG. 2, the display device 10 and the touch sensor panel 15, which are fabricated separately, are bonded together. However, the present invention is not limited to this configuration. For example, one of the substrate 21 and the substrate 31 of the display device 10 may be On-cell or in-cell type, in which electrodes constituting a sensing element are provided on either or both sides. It may be a touch panel.

[0067] In addition, an anti-reflection film may be used for the film used in the touch sensor panel 15. Alternatively, an anti-reflection film may be attached to the display surface side of the touch sensor panel 15. This prevents the surface of the touch panel 10a from reflecting external light. , visibility can be improved.

[0068] In addition to the above, the display surface side of the display device 10 may be provided with an anti-reflection film, a polarizing film, a phase shifter, etc. Functional films such as contrast films, light diffusion films, and light collection films, and prevent dust from adhering antistatic film that prevents dirt from adhering to the surface, water-repellent film that prevents scratches from occurring during use, A functional film including a hard coat film, a film having a function of self-repairing scratches, etc. may be provided.

[0069] [Cross-sectional configuration example 1-1] FIG. 1B shows an example of a cross section corresponding to the cutting line A1-A2 in FIG. In FIG. 1B, a cross section of a region including two adjacent pixels (subpixels) is shown. In FIG. 1B, a reflective liquid crystal element 40 is used as the display element. In this case, the substrate 31 side is the display surface side.

[0070] The display device 10 has a configuration in which a liquid crystal layer 24 is sandwiched between a substrate 21 and a substrate 31. The liquid crystal element 40 has a conductive layer 23 provided on the substrate 21 side and a The liquid crystal layer 24 is sandwiched between a conductive layer 25. The conductive layer 25 is a visible The conductive layer 25 has a function of transmitting light. The conductive layer 25 functions as a common electrode or the like.

[0071] A transistor 70 is provided on the substrate 21 and electrically connected to the conductive layer 23 . On the other hand, on the substrate 21 side of the substrate 31, a colored layer 51a, a colored layer 51b, a light-shielding layer 52, and an insulating layer 6 1, a conductive layer 25, etc. are provided. In addition, an alignment film 53a is provided between the conductive layer 23 and the liquid crystal layer 24. An alignment film 53b is provided between the conductive layer 25 and the liquid crystal layer 24. The alignment film 53a and the alignment film 53b may not be provided if they are not necessary.

[0072] The transistor 70 includes a conductive layer 71 that functions as a gate, a semiconductor layer 72, and a gate insulating layer the insulating layer 73 serving as a source or a drain; the conductive layer 74a serving as a source or a drain; The second conductive layer 74b functions as the other of the source and drain.

[0073] An insulating layer 81 is provided to cover the transistor 70. A conductive layer 2 is formed on the insulating layer 81. The conductive layer 23 and the conductive layer 74b are connected to each other through an opening provided in the insulating layer 81. The transistor 70 and the conductive layer 23 are electrically connected to each other. are placed.

[0074] The insulating layer 81 also has a recess 50. The recess 50 is provided in a portion that does not overlap with the conductive layer 23. In other words, the insulating layer 81 does not overlap the conductive layer 23 and is not overlapped with the conductive layer 23. The alignment film 53a has a portion that is thinner than the portion that overlaps the recess 50 of the insulating layer 81. The upper surface of the alignment film 53a has a concave shape that matches the shape of the concave portion 50. .

[0075] In FIG. 1B, an alignment film 53a is provided to cover the side and upper surface of the recess 50. In addition, when the coverage of the alignment film 53a is low, the concave portion 5 of the alignment film 53a is When the portion in contact with the side surface of the conductive layer 23 is thinner than the other portion (for example, the portion overlapping the conductive layer 23), In some cases, the side surface of the recess 50 is not completely covered and is divided.

[0076] The colored layer 51a and the colored layer 51b are disposed so as to overlap different conductive layers 23, respectively. The light-shielding layer 52 has a portion overlapping the region between two adjacent conductive layers 23. As shown in FIG. 1B, it is preferable to arrange the light-shielding layer 52 so that a part of the light-shielding layer 52 overlaps with an end of the conductive layer 23. It is nice.

[0077] The liquid crystal layer 24 includes the liquid crystal 12 and the monomer 13 in the area overlapping with the conductive layer 23. In addition, the liquid crystal layer 24 is arranged so as to sandwich the partition wall 11 in the area where it overlaps with the area between two adjacent conductive layers 23. In addition, it is preferable that the partition wall 11 and the light-shielding layer 52 have a portion where they overlap each other. .

[0078] The monomer 13 is a material that becomes a polymer by polymerization. The partition wall 11 is configured to include a polymer obtained by polymerization of the monomer 13. The portion may contain the same material as the liquid crystal 12 .

[0079] The monomer 13 may be a polymerizable monomer. It has photopolymerization (photocuring) that progresses when polymerized by heat, and thermal polymerization (thermosetting) that progresses when polymerized by heat. In particular, it is preferable to use a material having photopolymerizability. In addition to the monomer 13, the liquid crystal layer 24 may further include a monomer having a degree of polymerization of 2 or more and 100 or less. In this case, the oligomer may be a photopolymerizable or thermally polymerizable oligomer. It is preferable that the fluorine-containing polymer has such a property.

[0080] The monomer 13 may be, for example, a monofunctional monomer such as an acrylate or a methacrylate. , diacrylate, triacrylate, dimethacrylate, trimethacrylate, etc. Monofunctional monomers and polyfunctional monomers can be used. The monomer 13 may be a liquid crystal material or a non-liquid crystal material. or a mixture of these materials can be used.

[0081] The liquid crystal layer 24 contains residual polymerization initiator in the area where the liquid crystal layer 24 overlaps the conductive layer 23. The polymerization initiator is a compound that initiates the polymerization of monomers by an external stimulus such as light or heat. The polymerization initiator is a material that changes into a substance that can be used in a variety of applications, such as when exposed to ultraviolet light or heat. Therefore, a radical polymerization initiator that generates radicals can be used. The amount of the polymerization initiator is very small compared to the liquid crystal and monomer. and the weight ratio of the polymerization initiator, etc. to the total weight of the composition is 1 wt% or less. It is sufficient that they are mixed. The polymerization initiator can be appropriately selected depending on the material of the monomer 13. Depending on the material of the monomer 13, a cationic polymerization initiator may be used instead of a radical polymerization initiator. A polymerization initiator, an anionic polymerization initiator, etc. may also be used.

[0082] The monomer 13 may be selected from materials that can be polymerized by the polymerization initiator used. In particular, as a combination of monomer 13 and a polymerization initiator, polymerization is initiated by ultraviolet light, It is preferable to use a combination of materials that undergo polymerization.

[0083] The liquid crystal layer 24 contains a chiral agent in addition to the liquid crystal 12, the monomer 13, the polymerization initiator, etc. It's okay to do that.

[0084] The partition wall 11 includes a polymer obtained by polymerizing a monomer 13. When an acrylate is used as the monomer 13, the partition wall 11 contains a polyacrylate.

[0085] The partition 11 is made of not only the polymer but also the components contained in the liquid crystal layer 24 (liquid crystal 12, unpolymerized The monomer 13 that has not reacted, the polymerization initiator that has not reacted, the chiral agent, etc. may be included. stomach.

[0086] The degree of polymerization of the polymer varies depending on the formation conditions and the material of the monomer 13. Similarly, the volume density of the partition wall 11 also varies depending on the polymer formation conditions, the material of the monomer 13, etc. The ratio varies, but may be, for example, 70% or more and 100% or less, preferably 80% or more and 100% or less, more preferably Preferably, it can be set to 90% or more and 100% or less.

[0087] It is preferable that the partition wall 11 adheres the substrate 21 and the substrate 31 to each other. More specifically, the partition wall 1 1 is a layer provided on the substrate 21 side and in contact with the liquid crystal layer 24, and is provided on the substrate 31 side and in contact with the liquid crystal layer In FIG. 1B, a part of the alignment film 53a and The partition wall 11 is bonded to the alignment film 53a and a part of the alignment film 53b. In the case where b is not provided, a part of the insulating layer 81 and a part of the conductive layer 25 are bonded to the partition wall 11. The composition is as follows.

[0088] The partition wall 11 is provided so as to overlap the recess 50 of the insulating layer 81. More specifically, The partition wall 11 is a part of the alignment film 53a covering the upper surface of the recess 50 and a part of the alignment film 53b covering the side surface of the recess 50. 3a. As a result, the partition wall 11 and the alignment film 53a are in contact with each other. As the area increases, an anchor effect occurs, and the adhesive strength of these can be increased. If the partition wall 11 is provided so as to fill the recess 50, the adhesive strength can be increased more effectively. This is preferable because it is possible to

[0089] In addition, when the alignment film 53a does not completely cover the side surface of the recess 50 of the insulating layer 81 and is divided, In the case where the alignment film 53a is not provided, the area where the partition wall 11 and the insulating layer 81 are in contact with each other is There may be.

[0090] In the display device 10 according to the embodiment of the present invention, the partition wall 11 reduces the adhesive strength between the substrate 21 and the substrate 31. The barrier ribs 11 are formed of a material that is hard to break and highly reliable. The insulating layer 81 is provided so as to at least partially overlap the recess 50 formed therein, and has an anchor effect. The adhesive strength is further increased by the partition wall 11. In addition to the improved cell gap, this display device also suppresses changes in the cell gap caused by external forces. .

[0091] Here, the positional relationship between the partition wall 11 and the recessed portion 50 and their respective shapes are shown in FIG. The present invention is not limited to this configuration.

[0092] FIG. 3A is an enlarged schematic cross-sectional view of the partition wall 11 and its vicinity in FIG. 1B. .

[0093] FIG. 3B shows a case where the insulating layer 81 is not provided in the portion not overlapping the conductive layer 23. Specifically, the alignment film 53a is formed on the side surface of the insulating layer 81 and the upper surface of the insulating layer 73. With this configuration, the partition wall 11 and the layer in contact therewith Since the contact area is increased, the adhesive strength can be further increased.

[0094] In FIG. 3C, a part of the conductive layer 74a is extended to a position overlapping the recess 50. The partition wall 11 does not overlap with either the conductive layer 23 or the conductive layer 74a. It is located in an area where there is no

[0095] FIG. 3D shows that an insulating layer 81 is provided in the portion not overlapping with the conductive layer 23 in FIG. 3C. The alignment film 53a is not covered by a part of the conductive layer 74a and the insulating layer 74b. It is provided in contact with a portion of layer 73 .

[0096] FIG. 3E shows a structure in which an insulating layer 85 is provided to cover the conductive layer 74a in FIG. 3D. The insulating layer 85 can protect the conductive layer 74a. This helps prevent problems such as electrical shorts caused by exposed 4a.

[0097] Here, the partition walls 11 are formed in a self-aligning manner by irradiation with light, so that the light is ideally parallel. In the case of light, it is not formed in the area overlapping with the light-shielding member. Therefore, due to light scattering and the directivity of the light source, the partition 11 is also formed in the portion overlapping with the light-shielding member. In FIG. 3(F), a part of the conductive layer 23 in FIG. 1 shows an example in which a partition wall 11 is provided.

[0098] In addition, although the alignment film 53a is depicted as having a uniform thickness in FIGS. In reality, the area near the side of the recess 50 may be thinner than other areas or may be divided. 3(A) to (F), the side surface of the recess 50 of the insulating layer 81 is Although an example of a case where the insulating layer 81 is approximately perpendicular is shown, in reality, the insulating layer 81 may be formed in a different direction depending on the processing method and conditions. It may not be perpendicular. For example, the bottom may be located inside the top in plan view. In some cases, the bottom is wider than the top, and the side is constricted in cross section. It may also be in a narrow or expanded shape.

[0099] The above is the description of the cross-sectional configuration example 1-1.

[0100] [Pixel layout example] FIG. 4(A) shows an example of a pixel layout when viewed from the display surface side. The conductive layers, the partition wall 11, the structures 14a, the structures 14b, etc., provided on the plate 21 side are shown. Also, some components such as insulating layers are not shown.

[0101] The pixel shown in FIG. 4A includes a transistor 70 and a capacitor 75. 0 is a conductive layer 71a, a semiconductor layer 72, an insulating layer 73 (not shown), a conductive layer 74a, a conductive layer The capacitance element 75 has a conductive layer 74b and a conductive layer 71b. The pixel has a structure in which the pixels are stacked with a conductive layer 74b interposed therebetween (not shown). The conductive layer 23 is connected to the pixel electrode and functions as a pixel electrode. The conductive layer 23 reflects visible light. and also blocks ultraviolet rays.

[0102] Here, a part of the conductive layer 74a functions as a signal line, and a part of the conductive layer 71b functions as a capacitance line. A part of the conductive layer 71a functions as a scanning line.

[0103] In FIG. 4A, the region where the partition wall 11 is provided is indicated by a hatched pattern. 11 is formed in a portion where the above-mentioned conductive layers are not provided.

[0104] As shown in FIG. 4A, wiring or the like is provided between two adjacent conductive layers 23. Therefore, the partition 11 is not formed in the portion overlapping the wiring. The insulating layer 23 is not completely surrounded by the insulating layer 23, but is formed in an island shape that follows part of the contour of the conductive layer 23. In addition, the above may occur due to the irradiation conditions of the light irradiated during the formation of the partition wall 11, scattering of the light, etc. In some cases, the partition wall 11 may be formed so as to overlap a part of the conductive layer 23 or a part of the wiring.

[0105] Note that the pixel configuration shown in FIG. 4A is one example, and the present invention can be applied to pixels with various configurations. The same manufacturing method for a display device can be applied. Here, a pixel is made up of one transistor and one capacitor. Although a simple configuration having an element has been exemplified, the pixel configuration is not limited to this, and may include two or more transistors. The semiconductor device may have a transistor or a capacitance element.

[0106] FIG. 4A shows an example in which a structure 14a and a structure 14b are provided. The structures 14a and 14b are provided in an area where the conductive layer 23 is not provided. It is provided so that a part of it is in contact with the partition wall 11 .

[0107] Here, the structure 14a shows an example in which the upper surface shape is approximately circularly symmetric. As will be described later, the structure 14a and the structure 14b have a top surface shape that is long in the horizontal direction. By forming the widths of 14b different from each other, the heights can be made different in a self-aligned manner. do.

[0108] 4(B1) and (B2) are examples of cross sections in a region including the structures 14a. B1) corresponds to the section line B1-B2 in Fig. 4(A), and B2) corresponds to the section line B3-B4 in Fig. 4(B2). The cut lines B1-B2 and B3-B4 correspond to the structure 14a in the overlapping portions. and intersect at right angles.

[0109] The structures 14a are formed on the conductive layer 25 side, and are partly covered with an alignment film 53b. In addition, the top of the structure 14a (the bottom in FIGS. 4(B1) and 4(B2)) is aligned with the alignment film 53. The structure 14a is provided in contact with the partition wall 11. As shown in FIG. 4B2, a conductive layer 74 having a light-shielding property is provided. Since the partition wall 11 is not formed in the region overlapping with a, a part of the structure 14a is in contact with the liquid crystal 12. It may be possible.

[0110] 4(C1) and (C2) are examples of cross sections in a region including structures 14b. Fig. 4(C1) corresponds to the section line C1-C2 in Fig. 4(A), and Fig. 4(C2) corresponds to the section line C3-C4. FIG. 4(C1) corresponds to a cross section of the structure 14b in the short axis direction, and FIG. 4(C2) corresponds to a cross section of the structure 14b in the short axis direction. ) corresponds to a cross section of the structure 14b in the longitudinal direction.

[0111] The structural body 14b is provided on the conductive layer 25 side like the structural body 14a, and a part of the structural body 14b is provided on the conductive layer 25 side. 3b. In the portion overlapping the conductive layer 74a, the portion in contact with the liquid crystal 12 is Yes.

[0112] In addition, the width of the structure 14b in the short axis direction is smaller than that of the structure 14a, and the height of the structure 14b is also smaller than that of the structure 14a. Therefore, the top of the structure 14b is not in contact with the alignment film 53a and is located at the partition wall 1. It is covered by 1.

[0113] Although an example in which the structure 14a has a circularly symmetric shape is shown here, the structure 14a may be a square. The structure 14b may have a polygonal shape including a square shape, a polygonal shape with rounded corners, or the like. Although an example of a long shape is shown, at least a portion having a width (or diameter) smaller than that of the structure 14a is shown. It is sufficient that the shape has a certain shape, and it may be circular or polygonal.

[0114] The above is a description of an example of a pixel layout.

[0115] Other configuration examples and manufacturing methods of the display device of one embodiment of the present invention will be described below. Note that a description of the same parts as those described above will be omitted, and only the differences will be described.

[0116] [Cross-sectional configuration example 1-2] FIG. 5 shows a schematic cross-sectional view of a display device exemplified below. The configuration shown in FIG. 5 mainly includes a structure. The configuration differs from that shown in FIG. 1(B) in that it has 14a and structures 14b.

[0117] The structures 14a and 14b are provided between the conductive layer 25 and the alignment film 53b. The alignment film 53b is provided to cover the structures 14a and 14b. The structure 4a and the structure 14b are each located between two adjacent conductive layers 23. The body 14a and the structure 14b overlap the light-shielding layer 52 and the recess 50 of the insulating layer 81, respectively. The partition wall 11 is provided so as to surround the structures 14a and 14b. It is being done.

[0118] The structure 14 prevents the substrate 21 and the substrate 31 from coming closer than necessary when they are bonded together. The spacer 44 functions as a spacer for adjusting the cell gap of the liquid crystal element 40.

[0119] In addition, the partition wall 11 is provided so as to surround the structures 14a and 14b, The adhesive strength is increased as compared to the example shown in FIG. 1(B).

[0120] [Cross-sectional configuration example 1-3] FIG. 6A is a schematic cross-sectional view of a display device exemplified below. The structure shown in FIG. The main difference is that the substrate 21 is replaced with a substrate 41a, an adhesive layer 42a, and an insulating layer 82. 5 in that it has a substrate 41b, an adhesive layer 42b, and an insulating layer 62 instead of 31. It differs from.

[0121] The insulating layer 82 is an insulating layer that forms a surface on which the transistor 70 and the like are formed. The adhesive layer 42a is attached to one surface of the insulating layer 82. A transistor 70, a conductive layer 23, and the like are provided in the semiconductor device.

[0122] The insulating layer 62 is an insulating layer that forms a surface on which the light-shielding layer 52, the colored layer 51a, the colored layer 51b, etc. are formed. The substrate 41b is attached to one surface of the insulating layer 62 by an adhesive layer 42b. On the other surface side of the insulating layer 62, a colored layer 51a, a colored layer 51b, a light-shielding layer 52, an insulating layer 61, A structure 14a, a structure 14b, a conductive layer 25, an alignment film 53b, and the like are provided.

[0123] The substrate 41a and the substrate 41b can be made of a thin and light material. In addition, a flexible material can be used as the substrate 41b. By using a flexible material for both plates 41a and 41b, a bendable display device can be obtained. It is possible to achieve this.

[0124] For example, the thickness of the substrate 41a and the substrate 41b is preferably 1 μm or more and 300 μm or less. Preferably, the thickness is 3 μm or more and 200 μm or less, more preferably, 5 μm or more and 150 μm or less, and even more preferably, Alternatively, a thin sheet-like material having a thickness of 10 μm to 100 μm can be used.

[0125] [Cross-sectional configuration example 1-4] FIG. 6B is a schematic cross-sectional view of a display device exemplified below. The structure shown in FIG. 6A in that the substrate 21 is provided instead of the substrate 41a, the adhesive layer 42a, and the insulating layer 82. This differs from the configuration shown in FIG.

[0126] In the configuration shown in FIG. 6B, a thin substrate 41b is used on the display surface side, and A substrate 21 having higher rigidity than the substrate 41b is provided on the side of the substrate 21. In addition, the thickness of the substrate 41b on the display surface side is thin. Therefore, for example, when a relatively thick glass substrate (e.g., thicker than 0.3 mm) is used, In comparison, this display device has superior optical properties such as display contrast, color reproducibility, and viewing angle dependency. This can be achieved.

[0127] [Cross-sectional configuration example 1-5] FIG. 6C is a schematic cross-sectional view of a display device exemplified below. The structure shown in FIG. The main features are that the substrate 21 is replaced with a substrate 41a, an adhesive layer 42a, and a resin layer 45a, and the substrate 31 1, the resin layer 45b and the insulating layer 62 are provided instead of the structure 14a and the structure 14b. 5 in that it is provided in contact with an insulating layer 81.

[0128] The resin layer 45a is an insulating layer that supports the transistor 70 and the like. The following resins are available: polyimide resin, acrylic resin, epoxy resin, polyamide resin, polyimide ammonia resin, siloxane resin, benzocyclobutene resin, phenol resin, etc. can be used. In particular, polyimide resin is preferable because it has excellent heat resistance and a low linear thermal expansion coefficient. .

[0129] The resin layer 45a has a thickness of, for example, 0.01 μm or more and 200 μm or less, preferably 0.1 μm or less. It is preferable that the thickness of the film is 100 μm or more and 100 μm or less. This provides flexibility and makes it possible to bend the film. It is possible to realize a display device that can

[0130] The substrate 41a is attached to one surface of the resin layer 45a by an adhesive layer 42a. An insulating layer 82 is provided on the other surface of the resin layer 45a.

[0131] The resin layer 45b can be made of a light-transmitting resin material. A film or sheet-like material having a thickness of from 1 μm to 200 μm can be used.

[0132] In this manner, the colored layer 51a, the colored layer 51b, the light-shielding layer 52, and the insulating layer 53 are directly formed on the resin layer 45b. The layer 61, the conductive layer 25, the alignment film 53b, and the like are provided, so that the manufacturing process can be simplified. It can be abbreviated.

[0133] An insulating layer 62 is provided on one surface of the resin layer 45b. It is not necessary to provide this if necessary.

[0134] The structures 14a and 14b are provided in the recesses 50 and are formed on the upper surface of the insulating layer 81. The structure 14a and the structure 14b are provided so as to be in contact with each other. An alignment film 53a is provided thereon.

[0135] By adopting such a configuration, the configuration on the resin layer 45b side can be simplified. For example, the colored layer 51a and the colored layer 51b each having an island shape, the light-shielding layer 52 having an opening, etc. are printed. In this way, the structure of the resin layer 45b can be formed by a roll-to-print method. It can be produced inexpensively using the mold process.

[0136] The above is a description of configuration example 1.

[0137] [Configuration example 2] Hereinafter, as an example of a display device according to one embodiment of the present invention, a display device having both a reflective liquid crystal element and a light-emitting element will be described. It has three display modes: emissive, reflective, and hybrid. An example of a display device (display panel) that uses the ER-Hybr id Display(Emission and Reflection Hybri d Display, or Emission / Reflection Hybrid It can also be called a Display.

[0138] One example of such a display panel is a liquid crystal element having an electrode that reflects visible light, and a light emitting element. In this case, the electrode that reflects visible light is open. It is preferable that the opening and the light emitting element are arranged to overlap each other. In the optical mode, the light emitting element can be driven so that light is emitted from the aperture. The light-emitting region of the light-emitting element is disposed in a region that does not overlap with the electrode that reflects visible light. The light from the light emitting element is emitted through the gap between the electrodes that reflect visible light. By arranging the liquid crystal element and the light emitting element in a layered manner, the liquid crystal element and the light emitting element may be Compared to the case where light-emitting elements are arranged side by side, pixels that have both liquid crystal elements and light-emitting elements (pixel This allows the size of the image display unit (also called a display unit) to be reduced, enabling the realization of higher resolution display devices. It can be realized.

[0139] Such display panels are displayed in reflective mode when used outdoors or in other brightly lit environments. This allows for extremely low power consumption operation. In such a case, the image can be displayed at an optimum brightness by displaying in the light emitting mode. In addition, it can be displayed in a mode that uses both luminous and reflective light (also called hybrid mode). This allows for lower power consumption compared to conventional display panels, even in environments with insufficient external light. It is possible to display images with low power consumption and high contrast. In the hybrid mode, it is possible to display images that reflect the fluctuations of the ambient light, so users can This allows for a more natural looking display.

[0140] [Cross-sectional configuration example 2-1] FIG. 7A is a schematic cross-sectional view of a display device exemplified below. The structure shown in FIG. In FIG. 7(A), the liquid crystal element 40 and the light emitting element 90 are disposed one on top of the other with an insulating layer 83 interposed therebetween. ), the substrate 31 side corresponds to the display surface side.

[0141] The display device includes a transistor 70a and a transistor 70b formed on one surface of an insulating layer 83. The transistor 70a is electrically connected to the liquid crystal element 40. The cap 70b is electrically connected to the light emitting element 90.

[0142] The insulating layer 81 covering the transistors 70a and 70b has a conductive layer on the substrate 21 side. 91 is provided, and an insulating layer 84 is provided to cover the end of the conductive layer 91. The source or drain of the transistor 70b is connected to the insulating layer 81 through an opening. The insulating layer 84 functions as a planarizing layer. On the plate 21 side, an EL layer 92, a conductive layer 93a, and a conductive layer 93b are provided. The light emitting element 90 is constituted by the EL layer 91, the conductive layer 93a, and the conductive layer 93b. There are.

[0143] The conductive layer 91 and the conductive layer 93a have a function of transmitting visible light. Therefore, the light emitting element 90 emits light toward the conductive layer 91. It is a bottom emission type light emitting element.

[0144] In addition, the conductive layer 23a and the conductive layer 23b are laminated on the substrate 31 side of the insulating layer 83. In addition, an alignment film 53a is provided between the conductive layer 23a and the liquid crystal layer 24. 24 and the structure between the liquid crystal layer 24 and the substrate 31 can be the same as in the first structural example, so the description thereof will be omitted. do.

[0145] The display device also includes a connection portion that electrically connects the conductive layers provided on both sides of the insulating layer 83. In FIG. 7A, the terminal portion has an opening provided in an insulating layer 83 and a terminal portion located in the opening. A conductive layer is formed by processing the same conductive film as the gate of the transistor 70a, etc. The structure shown in FIG. 1 is a structure in which the source or drain of the transistor 70a and the conductive layer 23b are electrically connected via a connection portion 80.

[0146] The conductive layer 23a has a function of transmitting visible light, and the conductive layer 23b has a function of reflecting visible light. Therefore, the liquid crystal element 40 functions as a reflective liquid crystal element.

[0147] In addition, the conductive layer 23b that reflects visible light has an opening in the area overlapping the light emitting element 90. The light emitted from the light emitting element 90 is guided to the substrate 31 side through the opening. It is ejected.

[0148] The display device shown in FIG. 7A includes a transistor 70a electrically connected to a liquid crystal element 40. Since the transistor 70b is electrically connected to the light-emitting element 90, the liquid crystal element 40 and the light-emitting element The optical elements 90 can be controlled independently. The transistor 70b can be formed on the same surface through the same process. It is simplified and can be produced with high yield.

[0149] As shown in FIG. 7A, the conductive layer 93b that reflects visible light has a portion overlapping the partition wall 11. An opening is provided in the area where the conductive layer 93a is to be formed. When light is irradiated to form the partition wall 11, the light is irradiated onto the liquid crystal layer 24 through the opening. It can be shot.

[0150] In addition, a recess 50 is formed in the insulating layer 83 in the region between the two conductive layers 23a. Among the plurality of partition walls 11, a part of the partition wall 11 provided between two conductive layers 23a is is provided so as to overlap the recess 50.

[0151] In addition, on the surface of the conductive layer 25 facing the substrate 21, a structure 14 is provided at a position overlapping the recess 50. In addition, the structure 14 is provided so as to overlap the partition wall 11.

[0152] [Variation 1] FIG. 7B shows an example in which some of the configuration is different from that in FIG. 7A. Specifically, the substrate 31, an insulating layer 62, an adhesive layer 42b, and a substrate 41b are provided, and the substrate 21 is replaced by The substrate 41a is provided.

[0153] With this configuration, a bendable display device can be realized.

[0154] [Cross-sectional configuration example 2-2] FIG. 8A is a schematic cross-sectional view of a display device exemplified below. The structure shown in FIG. 7A, the transistors 70a and 70b are The main difference is that it is provided closer to the substrate 31 than the insulating layer 83. shows an example having two structures (structure 14a, structure 14b) with different heights. .

[0155] The transistor 70a has a source or a drain that is formed through an opening in the insulating layer 81. The insulating layer 81 is electrically connected to the conductive layer 23 provided on the insulating layer 81. An alignment film 53a is provided thereon.

[0156] The transistor 70b is electrically connected to the conductive layer 91 via a connection portion 80. An EL layer 92, a conductive layer 93b, and a conductive layer 93a are laminated to cover the conductive layer 91. There are.

[0157] Here, the surface of the conductive layer 91 on the side of the substrate 21 and the surface of the insulating layer 83 on the side of the substrate 21 are approximately the same. The difference in the level at the boundary between these regions is extremely small. In addition, a configuration may be adopted in which the insulating layer (insulating layer 84) covering the end portion of the conductive layer 91 is not provided. An insulating layer 84 may also be provided.

[0158] In addition, the conductive layer 93a that transmits visible light is thicker than the conductive layer 93b that reflects visible light. For example, the conductive layer 93a containing a metal oxide is provided on the substrate 21 side. By providing the conductive layer 93b containing a metal or an alloy thereon so as to cover the surface of the conductive layer 93b, Oxidation can be suppressed, and a highly reliable display device can be realized.

[0159] As shown in FIG. 8A, the partition wall 11 overlaps not only the light-shielding layer 52 but also the light-shielding layer 53 and the like. The light emitting element 90 may also be provided in an area overlapping the light emitting element 90. 3, the conductive layer 23 is connected to the substrate 31 through the openings, the partition walls 11, the colored layer 51a, and the like. is emitted to the outside.

[0160] [Modification 2] FIG. 8B shows an example in which some of the configuration is different from that in FIG. 8A. Specifically, the substrate 31, an insulating layer 62, an adhesive layer 42b, and a substrate 41b are provided, and the substrate 21 is replaced by The substrate 41a is provided.

[0161] With this configuration, a bendable display device can be realized.

[0162] [Cross-sectional configuration example 2-3] FIG. 9A is a schematic cross-sectional view of a display device exemplified below. The structure shown in FIG. , mainly because transistor 70b is provided on a different insulating layer than transistor 70a. , and in that there is an adhesive layer 99 between the transistors 70a and 70b, This differs from the configuration shown in 7(A).

[0163] The transistor 70b is provided on one side of the insulating layer 86. The other surface is bonded to the insulating layer 81 covering the transistor 70a via an adhesive layer 99. .

[0164] Further, on one surface side of the insulating layer 86, there are an insulating layer 87 and an insulating layer 88. The insulating layer 87 is A part of the insulating layer 88 functions as a gate insulating layer for the transistor 70b. The insulating layer 84 is provided over the insulating layer 88. do.

[0165] Here, the transistor 70a has a conductive layer 78 functioning as a second gate and a second In the example shown, the conductive layer 78 has an insulating layer 79 which functions as a gate insulating layer. It is preferable to use a conductive material that blocks visible light.

[0166] In this embodiment, the substrate 21 and the substrate 31 are used as an example. For example, as shown in FIG. 7B, a flexible plate may be used instead of the substrate 21. Alternatively, the substrate 31 may be replaced with an insulating layer 62, an adhesive layer 42b, and substrate 41b can be used. This allows a bendable display device to be realized. can.

[0167] [Cross-sectional configuration example 2-4] FIG. 9B is a schematic cross-sectional view of a display device exemplified below. The structure shown in FIG. The light emitting element 90 is a top emission type light emitting element, and the insulating layer 87 is a light emitting element. The laminated structure up to the substrate 90 is inverted and does not have an adhesive layer 99. This differs from the configuration shown in FIG. 9(A).

[0168] The substrate 21 and the substrate 31 are bonded together by an adhesive layer 89. The adhesive layer 89 is , which is provided to cover the light emitting element 90 and has a function of sealing the light emitting element 90 .

[0169] The above is an explanation of configuration example 2.

[0170] [Production method example 1] [Production Method Example 1-1] Next, an example of a method for manufacturing the display device 10 shown in FIG. 11 are schematic cross-sectional views of the display device 10 at various stages in the manufacturing method thereof. This is a schematic diagram.

[0171] The thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device are formed by sputtering. , Chemical Vapor Deposition (CVD) method, Vacuum evaporation, Pulsed Laser Deposit (PLD) ion) method, Atomic Layer Deposition (ALD) The CVD method can be a plasma-enhanced chemical vapor deposition (PEC) method. The thermal CVD method may be a metal organic chemical vapor deposition (MOCVD) method. CVD (Metal Organic CVD) method may also be used.

[0172] In addition, the thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device are formed by spin coating, de Dip, spray coating, inkjet, dispensing, screen printing, offset printing Brush, doctor knife, slit coat, roll coat, curtain coat, knife coat, etc. It can be formed by the method of

[0173] In addition, when processing the thin films that make up the display device, photolithography and other methods are used. Alternatively, an island-shaped thin film can be formed by a film formation method using a shielding mask. Alternatively, a thin film may be formed by a nanoimprint method, a sandblasting method, a lift-off method, or the like. In the photolithography method, a resist mask is applied to the thin film to be processed. and forming a resist mask on the thin film, processing the thin film by etching or the like, and then removing the resist mask. After forming a photosensitive thin film, the thin film is exposed to light and developed to form a desired shape. There are two ways to do this:

[0174] In the photolithography method, the light used for exposure is, for example, i-line (wavelength 365 nm), Using g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. In addition, ultraviolet light, KrF laser light, ArF laser light, etc. can be used. The exposure may be performed by immersion lithography. Using extreme ultraviolet (EUV) and X-rays, Also, instead of light for exposure, an electron beam can be used. The use of light, X-rays or electron beams is preferable because it allows extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, the photomask is It is not necessary.

[0175] There are three methods for etching thin films: dry etching, wet etching, and sandblasting. Methods such as the above can be used.

[0176] Formation of Transistor 70 First, a conductive layer 71 is formed on the substrate 21. The conductive layer 71 is formed by depositing a conductive film and then applying a resist. A resist mask is formed, the conductive film is etched, and then the resist mask is removed. It can be formed more easily.

[0177] Next, an insulating layer 73 is formed.

[0178] Next, the semiconductor layer 72 is formed. The semiconductor layer 72 is formed by forming a semiconductor film and then removing a resist. A mask is formed, the semiconductor film is etched, and then the resist mask is removed. It can be formed.

[0179] Subsequently, the conductive layer 74a and the conductive layer 74b are formed. , can be formed in the same manner as the conductive layer 71.

[0180] Through the above steps, the transistor 70 can be formed.

[0181] <Formation of insulating layer 81> Next, the insulating layer 81 is formed (FIG. 10(A)). A photosensitive material is used for the insulating layer 81. By this, the opening can be formed by photolithography or the like. After the film is formed, a resist mask is formed by photolithography or the like, and a part of the insulating layer 81 is The openings may be formed by etching the insulating layer 81. This is preferable because it is possible to improve the flatness of the upper surface.

[0182] Furthermore, the insulating layer 81 may have a laminated structure of an inorganic insulating film and an organic insulating film.

[0183] <Formation of Conductive Layer 23 and Recess 50> Next, a conductive film that will become the conductive layer 23 is formed on the insulating layer 81. Then, a resist mask 95 is formed on the conductive film. The thin portions are then etched to form a conductive layer 23 (FIG. 10(B)).

[0184] Next, a recess 50 is formed in the insulating layer 81 (FIG. 10(C)). Using the mask 95 as an etching mask, a portion of the upper part of the insulating layer 81 is etched. It can be formed by:

[0185] The recess 50 is preferably formed by dry etching. When using mechanical insulating materials, plasma treatment (ashing treatment) in an oxygen-containing atmosphere is required. It is preferable to use the insulating layer 81 by ashing. This can increase the etching rate selectivity of the conductive layer 23, thereby preventing the conductive layer 23 from being etched. can.

[0186] When forming the recess 50, the resist mask 95 may be used as a mask. The hard mask 95 may be removed and the conductive layer 23 may be used as a hard mask.

[0187] <Formation of alignment film 53a> Next, an alignment film 53a is formed (FIG. 10(D)). A thin film that will become the alignment film 53a is formed. Then, a rubbing treatment is performed to form the alignment film 53a.

[0188] <Formation of the light-shielding layer 52, the colored layer 51a, and the colored layer 51b> Next, a light-shielding layer 52 is formed on the substrate 31. The light-shielding layer 52 is formed by processing a conductive film. It may be formed by the same method as the layer 71, or may be formed by using a resin material containing a metal material, a pigment, or a dye. It may be formed by using the same method as that for the insulating layer 81 and the like.

[0189] Next, the colored layer 51a, the colored layer 51b, etc. are formed. The insulating layer 1b can be formed by the same method as the insulating layer 81 and the like.

[0190] The colored layers 51a and 51b may be formed before the light-shielding layer 52. At this time, a part of the light-shielding layer 52 is formed so as to cover the ends of the colored layers 51a and 51b. It is preferable.

[0191] <Formation of insulating layer 61, conductive layer 25, and alignment film 53b> Next, an insulating layer 61 is formed to cover the light-shielding layer 52, the colored layer 51a, the colored layer 51b, etc. The insulating layer 61 prevents impurities contained in the colored layer 51a and the like from diffusing into the liquid crystal layer 24. The insulating layer 61 also functions as an overcoat. It may also function as a flattening layer that covers steps on the surface of the colored layer 51b and the like. It should be noted that the insulating layer 61 does not have to be provided if it is not necessary.

[0192] Subsequently, the conductive layer 25 is formed on the insulating layer 61. The conductive layer 25 is formed in the same manner as the conductive layer 71, etc. Alternatively, the island-shaped regions can be formed by a film formation method using a shielding mask. A conductive layer 25 may be formed.

[0193] Next, an alignment film 53b is formed on the conductive layer 25 (FIG. 10(E)). The alignment film 53b has It can be formed in the same manner as the alignment film 53a.

[0194] The above-mentioned process for the substrate 21 and the process for the substrate 31 can be carried out independently. can be done.

[0195] <Bonding of substrate 21 and substrate 31> Next, an adhesive layer is applied to either or both of the substrates 21 and 31 to bond them together. The adhesive layer is formed so as to surround the area in which the pixels are arranged. The adhesive layer can be formed by, for example, a screen printing method or a dispensing method. The adhesive layer may be made of a thermosetting resin, an ultraviolet curing resin, or the like. It is also possible to use a resin that is temporarily hardened by irradiation and then hardened by applying heat. Alternatively, a resin having both ultraviolet curing and heat curing properties may be used as the adhesive layer.

[0196] Next, a composition that will become the liquid crystal layer 24 is dropped onto the area surrounded by the adhesive layer by a dispense method or the like. Specifically, a composition containing a liquid crystal 12, a monomer 13, and a polymerization initiator is dropped. The composition may also contain a chiral agent.

[0197] Next, the substrate 21 and the substrate 31 are bonded together so as to sandwich the composition that will become the liquid crystal layer 24 therebetween. If the bonding is performed under a reduced pressure atmosphere, air bubbles may be generated between the substrate 21 and the substrate 31. This is preferable because it can prevent the intrusion of the

[0198] The composition that will become the liquid crystal layer 24 is applied to the substrate 21 and the substrate 31 in a reduced pressure atmosphere after the substrates 21 and 31 are bonded together. Alternatively, the liquid crystal layer 24 may be placed under the adhesive layer and injected through a gap therein. After the composition is dropped, granular gap spacers are applied to the area where the pixels are arranged and to the area Alternatively, a composition containing the gap spacer may be dropped onto the outside of the substrate.

[0199] At this point, a liquid crystal element 40 is formed, including conductive layer 23, conductive layer 25, and liquid crystal 12 ( At this stage, the partition walls 11 have not been formed and the liquid crystal layer 24 has not been formed. The concentration of monomer 13 contained in the solution is high.

[0200] Next, light 20 is applied from the substrate 21 side (FIG. 11(B)).

[0201] The light 20 can be light having a wavelength and intensity to which the polymerization initiator reacts. For example, The light 20 can be ultraviolet light having a wavelength of 100 nm to 400 nm. It is preferable to use light with a wavelength of 400 nm or less since absorption by the atmosphere can be suppressed. There are light with wavelengths of 254 nm, 365 nm, and 385 nm. Light 20 is , high pressure mercury lamps, low pressure mercury lamps, metal halide lamps, xenon lamps, LEDs, etc. In addition to lamps and LEDs, excimer lasers and other light sources can also be used. A laser may be used as the light source.

[0202] The light 20 is as parallel as possible so that it is incident perpendicularly to the surface of the substrate 21. It is preferable to use a light source having a large substrate 21 and a plurality of light sources. In this case, there is a risk that the light will be incident from an oblique direction. It is preferable to provide a slit or the like to make the light from the light source closer to parallel light.

[0203] As shown in FIG. 11B, in the area where the conductive layer 23 is not provided, the light 20 is incident on the liquid crystal panel 21. On the other hand, in the region where the conductive layer 23 is provided, the light 20 is irradiated onto the conductive layer 23. The light 20 is blocked by the conductive layer 23 and does not reach the liquid crystal layer 24. The layer 71, the conductive layer 74a, the conductive layer 74b, and the like also provide light shielding.

[0204] In this embodiment, the transistor 70 has a conductive layer 71 functioning as a gate, which is formed on the substrate 21. The figure shows a bottom gate transistor located on the side of the photodiode. Since the light is blocked by the layer 71 and does not reach the semiconductor layer 72, the electrical characteristics of the transistor 70 are In addition, the transistor 70 is a top In the case of using a transistor with a gate structure, a portion for blocking light 20 is provided under the semiconductor layer 72. 2. Depositing a material or conductive layer below the semiconductor layer 72 to function as a second gate. It is preferable.

[0205] FIG. 12 shows an enlarged view of the area indicated by the dashed line in FIG. 11(B). 1 is a conceptual diagram showing the process in which irradiation with the monomer 13 is started and polymerization of the monomer 13 proceeds.

[0206] The area that is not blocked by the conductive layer 23 or the like and is irradiated with the light 20 is referred to as the irradiated area 30. In 30, the polymerization initiator in the liquid crystal layer 24 generates radicals by irradiation with light 20. As a result, the monomer 13 starts to polymerize. As the polymerization progresses, the As a result, the partition walls 11 containing the polymer grow.

[0207] Here, as the monomer 13 is polymerized, the liquid crystal layer 24 in the irradiated region 30 and its vicinity The concentration of the monomer 13 decreases as the distance from the irradiated region 30 increases. The monomer 13 serves to make the concentration distribution uniform. In this case, the substance may have the property of diffusing from a higher concentration to a lower concentration. 12, a part of the monomer 13 spreads in the liquid crystal layer 24 toward the irradiated area 30. As a result, after irradiation with the light 20, the area overlapping with the conductive layer 23 is more uniform than before irradiation with the light 20. The concentration of the monomer 13 in the liquid crystal layer 24 is low. When the concentration of the monomer 13 contained in the layer 24 is sufficiently low or when the monomer 13 is not sufficiently dissolved in the liquid crystal layer 24 In the case where the monomer 13 is easily diffused in the liquid, the concentration of the monomer 13 after irradiation with the light 20 is In some cases, the level may be so low that it is not issued.

[0208] The optimal concentration of the monomer 13 in the liquid crystal layer 24 before irradiation with the light 20 is It can be determined according to the area of ​​the illumination region 30. For example, When the area ratio of the irradiation area 30 to the display area is α% (α>0), The weight concentration of the monomer 13 in the crystal layer 24 is set to (α-x) wt % or more and (α+x) wt % or less. It is preferable to set the volume concentration of the monomer 13 in the liquid crystal layer 24 within the range. It is preferable to set the value within the range of (α-x)% or more and (α+x)% or less, where x=0 .5α, preferably x=0.3α, and more preferably x=0.2α. After irradiation with light 20, the monomers in the liquid crystal layer 24 in the portion that functions as the liquid crystal element 40 are The concentration of -13 can be reduced.

[0209] As the polymerization of the monomer 13 progresses, the alignment film 53a and the alignment layer 53b are aligned in the irradiated region 30. The partition wall 11 is formed so as to contact both the alignment film 53a and the alignment film 53b. It has the function of adhering 3b.

[0210] In addition, as shown in FIG. 12, the recess 50 of the insulating layer 81 is located between the conductive layers 23. The light 20 passes through the recess 50. Therefore, the partition 11 is formed in the area overlapping the recess 50. As a result, after irradiation with light 20, the partition 11 is shaped to fit into the recess 50. Since the adhesive can be grown in a shape that fills the recess 50, the adhesive strength is improved. It can be made as high as possible.

[0211] In FIG. 12, the partition wall 11 grows from the alignment film 53a side toward the alignment film 53b side. However, this is merely a conceptual diagram, and the process of growth of the partition 11 may take various forms. For example, numerous small polymer molecules formed in the liquid crystal layer 24 may grow while connecting with each other. Alternatively, the intensity of the light 20 may be so high that the light 20 reaches the alignment film 53b with sufficient intensity. When the light 20 reaches the liquid crystal layer 24, or when the light 20 is reflected by the light blocking layer 52 and is irradiated again to the liquid crystal layer 24, In the above, the polymer grows not only from the alignment film 53a side but also from the alignment film 53b side, and the alignment When the partition wall 11 is formed by joining with the polymer grown from the film 53a side and integrating with the polymer, The growth process through which the partition 11 was formed can be determined from the cross-sectional shape of the partition 11, etc. It can be estimated from the

[0212] Through the above steps, the display device 10 can be manufactured (FIG. 11(C)). C) is the same as FIG. 1(B).

[0213] In the above-mentioned manufacturing method, the irradiation conditions of the light 20 and the scattering of the light 20 may cause the following problems. As a result, the partition wall 11 may be formed in the area overlapping the area inside the contour of the conductive layer 23. Similarly, the conductive layers 74a, 74b, and 71, etc., which are portions that block the light 20, Part of the partition wall 11 may be arranged to overlap the area where the partition wall 11 overlaps the material.

[0214] Here, in the region overlapping with the conductive layer 23, the concentration of the monomer 13 increases as it approaches the partition wall 11. In some cases, the concentration distribution is such that the concentration is low and the concentration increases as the distance from the partition wall 11 increases.

[0215] In addition, in the area overlapping with the conductive layer 23, unreacted polymerization initiator may remain. At this time, if both the monomer 13 and the polymerization initiator remain in the liquid crystal layer 24, However, there is a risk that the ultraviolet rays contained in external light may cause a polymerization reaction of monomer 13. However, in the display device 10, the colored layer 51a and the like are provided on the display surface side of the liquid crystal layer 24. This prevents ultraviolet light contained in external light from reaching the liquid crystal layer 24. Therefore, even if monomer 13 or polymerization initiator remains, it will not be This prevents polymerization reactions from occurring, making it possible to realize highly reliable display devices. Cut.

[0216] This completes the description of the display device manufacturing method example 1-1.

[0217] [Production Method Example 1-2] An example of a method for manufacturing the display device illustrated in Cross-sectional Configuration Example 1-2 will be described below with reference to the drawings of FIG. This will be explained using:

[0218] First, in the same manner as in the manufacturing method example 1-1, the conductive layer 71 to the alignment film 53a are formed on the substrate 21 in this order. Form.

[0219] Moreover, on the substrate 31, a light-shielding layer 52 to a conductive layer 25 are formed in this order.

[0220] Next, the structures 14a and 14b are formed on the conductive layer 25. First, the structure 14a Then, an insulating film that will become the structure 14b is formed. The insulating film may be made of a photosensitive resin. The insulating film can be formed by, for example, a spin coating method.

[0221] Next, the insulating film is exposed through a photomask, developed, and then baked to form the structure. A body 14a and a structure 14b can be formed.

[0222] Here, a positive photosensitive material is used as the insulating film, and the part that is not irradiated with light remains after development. Furthermore, it is preferable to use a structure 14b having a smaller width than the structure 14a. It is preferable to use a photomask that is suitable for forming the structures 14b. As a result, structures having a height shorter than that of the structures 14a are formed. The body 14b can be formed in a self-aligning manner.

[0223] In addition to the above, the structures 14a and 14b having different heights can be formed by the following method. Exposure technology using multi-tone masks such as halftone masks or gray-tone masks, Alternatively, a multiple exposure technique using two or more photomasks may be used.

[0224] Next, an alignment film 53b is formed to cover the structures 14a, 14b and the conductive layer 25. (Figure 13(A)).

[0225] Next, the substrate 21 and the substrate 31 are bonded together in the same manner as in the manufacturing method example 1-1.

[0226] Next, light 20 is irradiated from the substrate 21 side (FIG. 13(B)).

[0227] The light 20 is irradiated to the area that is not blocked by the conductive layer 23. Since the structure 14b is disposed at a position where it does not overlap with the conductive layer 23, the light 20 is guided by the structure 14a. The light is irradiated onto an area including the side surfaces of the structures 14a and 14b. A partition wall 11 is formed to surround 4b.

[0228] When the monomer 13 is polymerized to form a polymer, the liquid crystal layer 24 in which the monomer 13 is dispersed In this example, the polymer may grow from the surface in contact with the structure 14a and the structure 14b. Since the alignment film 53b is provided between the alignment film 53b and the conductive layer 25, the alignment film 53b is provided between the alignment film 53b and the conductive layer 25. The contact area between the alignment film 53b and the liquid crystal layer 24 is 1 mm. As a result, in the case where the structures 14a and 14b are not provided, Since the polymer is easily formed, the partition walls 11 formed have a higher density and strength than those formed by the conventional method. It tends to become a polymer with low molecular weight.

[0229] Through the above steps, a display device can be manufactured (FIG. 13C). is the same as FIG. 5.

[0230] In the configuration shown in FIG. 13C etc., the partition wall 11 and the structure 14a located inside the partition wall 11 In addition, the structure 14b can maintain the distance between the substrate 21 and the substrate 31. This not only improves physical strength against external forces, but also reduces the change in cell gap caused by external forces. This is a display device in which degradation is suppressed.

[0231] The above is an explanation of the Example of Production Method 1-2.

[0232] [Production Method Example 1-3] An example of a method for manufacturing the display device illustrated in Cross-sectional Configuration Example 1-3 will be described below with reference to FIGS. This will be explained using each of Figures 15.

[0233] First, the release layer 43a and the insulating layer 82 are formed in this order on the support substrate 44a.

[0234] The support substrate 44a has a rigidity sufficient for easy transportation within or between devices. In addition, a substrate having heat resistance to the heat used in the manufacturing process can be used. For example, a glass substrate having a thickness of 0.3 mm or more and 1 mm or less can be used.

[0235] The material used for the peeling layer 43a and the insulating layer 82 is Alternatively, a material may be selected such that release occurs in release layer 43a.

[0236] For example, the peeling layer 43a may be a layer containing a high melting point metal material such as tungsten, and the metal Layers containing oxides of the material are stacked, and silicon nitride, silicon oxide, etc. are used as the insulating layer 82. In the case of the insulating layer, layers of inorganic insulating materials such as silicon oxynitride and silicon nitride oxide can be stacked. In this specification, an oxynitride is a compound having a composition containing more oxygen than nitrogen. Nitrogen oxide refers to a material that contains more nitrogen than oxygen in its composition. If a high melting point metal material is used for the peeling layer 43a, the peeling layer 43a can be easily peeled off in the subsequent process. This is preferable because it allows processing by temperature, and therefore the freedom of selection of materials and formation methods is increased.

[0237] When a laminated structure of tungsten and tungsten oxide is used as the peeling layer 43a, At the interface between tungsten and tungsten oxide, in tungsten oxide, or in tungsten oxide and the insulating layer 82.

[0238] The configuration of the peeling layer 43a and the layer to be peeled thereon is not limited to this, and various materials may be used. You can select.

[0239] Next, on the insulating layer 82, the conductive layer 71 to the alignment film 53a are formed in the same manner as in the manufacturing method example 1-1. are formed in order.

[0240] A schematic cross-sectional view at this stage corresponds to FIG.

[0241] Next, a release layer 43b and an insulating layer 62 are formed in this order on the support substrate 44b.

[0242] The support substrate 44b may be made of the same material as the support substrate 44a. The insulating layer 62 can be formed in the same manner as the insulating layer 82. It can be formed by the method.

[0243] Next, on the insulating layer 62, the light-shielding layer 52, the colored layers 51a and 51b, the insulating layer 61, and the conductive layer 62 are formed. The conductive layer 25, the structures 14a and 14b, and the alignment film 53b were then formed in the same manner as described above. More forming.

[0244] A schematic cross-sectional view at this stage corresponds to FIG. 14(B).

[0245] Next, the supporting substrate 44a and the supporting substrate 44b are bonded together in the same manner as described above. This can be done by law.

[0246] Next, light 20 (not shown) is irradiated from the support substrate 44a side to form the partition walls 11 ( Figure 14(C)).

[0247] Here, the light 20 is irradiated so that the light 20 reaches the liquid crystal layer 24 through the peeling layer 43a. For example, when a material containing metal is used as the peeling layer 43a, the light 20 In some cases, the light 20 may not reach the liquid crystal layer 24 sufficiently due to the light blocking layer. When a material containing metal is used for the peeling layer 43a, the peeling layer 43a is made of a material that is sufficiently transparent to allow the light 20 to pass therethrough. In consideration of the use of a thin film and the reflection and absorption by the peeling layer 43a, the irradiation conditions of the light 20 are set It is important to make the conditions appropriate.

[0248] For example, a laminated structure of a tungsten film and a tungsten oxide film is used as the peeling layer 43a. In this case, the thickness of the tungsten film is set to 1 nm or more and 50 nm or less, preferably 1 nm or more and 30 nm or less. By making the thickness smaller than 1 nm and more preferably smaller than 20 nm, it is possible to avoid using a special irradiation device. Therefore, the partition wall 11 can be formed without using any metal.

[0249] In addition, the output of the irradiation device and the irradiation time are adjusted to adjust the energy of the light reaching the liquid crystal layer 24. is 0.1J / cm 2 More than 100J / cm 2 Less than or equal to 1 J / cm 2 More than 50J / c m 2 It is preferable to irradiate with the light 20 under the following conditions.

[0250] Next, the insulating layer 62 is peeled off from the peeling layer 43b, so that the support substrate 44b and The release layer 43b is removed (FIG. 15(A)).

[0251] In this way, it is preferable to form the partition wall 11 before peeling. Since a plurality of partition walls 11 that join the plate 21 and the insulating layer 62 are disposed between adjacent pixels, The adhesive strength between the insulating layer 62 and the insulating layer 21 is increased. Therefore, peeling off inside the liquid crystal layer 24 is suppressed, and the support substrate 44 can be manufactured with a higher yield. b can be peeled off.

[0252] The insulating layer 62 and the support substrate 44b can be peeled off by applying a mechanical force or by The peeling layer is etched, or a liquid is dropped onto the peeling layer, or the peeling layer is immersed in a liquid, or the like. For example, a liquid may be permeated into the peeling interface. The difference in the thermal expansion coefficient of the two layers may be utilized to perform peeling by heating or cooling. stomach.

[0253] In addition, before the peeling, a treatment may be performed to expose a part of the peeling interface. A part of the insulating layer 62 on the peeling layer 43b is removed by using a knife or a sharp member. The peeling can proceed from the portion where the insulating layer 62 has been removed as the starting point (starting point). .

[0254] After the peeling is completed, a part of the peeling layer 43b may remain on the surface of the insulating layer 62. In this case, the remaining peeling layer 43b is removed by cleaning, etching, wiping, or the like. In addition, the remaining peeling layer 43b has high transparency to visible light, and may affect visibility. If the insulating layer 62 and the adhesive layer 42 described later are not removed, the insulating layer 62 may not be removed. Between the peeling layer 43b and the peeling layer 43c, a layer containing the elements contained in the peeling layer 43b remains.

[0255] Next, the insulating layer 62 and the substrate 41b are bonded to each other by the adhesive layer 42b. For example, a thermosetting resin or an ultraviolet curing resin can be used.

[0256] Next, the insulating layer 82 is peeled off from the peeling layer 43a in the same manner as above. In this way, the support substrate 44a and the release layer 43a are removed (FIG. 15(B)).

[0257] Thereafter, the insulating layer 82 and the substrate 41a are bonded together by the adhesive layer 42a. The same material as that for the adhesive layer 42b can be used.

[0258] Through the above steps, a display device can be manufactured (FIG. 15C). is the same as FIG. 6(A).

[0259] In this step, the support substrate 44b and the release layer 43b are removed, and the substrate 41b is bonded. However, the support substrate 44a and the release layer 43a are removed first, and then the substrate 41a is removed. The lamination step may be carried out first, or these steps may be carried out simultaneously.

[0260] In the method for manufacturing a display device according to one embodiment of the present invention, the transistor 70 and the conductive layer 23 are In some cases, a relatively thick support substrate 44a is used, which makes it easy to transport and allows for high production yields. In addition, a method for forming the transistor 70 etc. directly on the thin substrate 41a can be used. In comparison, high temperature processing is performed when forming the transistor 70 and the insulating layer around it. This reduces impurities in and around the transistor 70, resulting in extremely reliable A high transistor 70 can be realized.

[0261] In addition, when the colored layer 51a and the light-shielding layer 52 are formed, a relatively thick support substrate 44b is used. Therefore, it is easy to transport and can be manufactured with a high yield. This allows high temperatures to be applied when forming the colored layer 51a, the light-shielding layer 52, etc. Therefore, the concentration of impurities is reduced, and a highly reliable display device can be obtained. Compared with a method of forming the colored layer 51a and the light-shielding layer 52 directly on the plate 41b, the method The influence of expansion and contraction of the substrate 44b can be suppressed. Since these have rigidity, they can be attached with high positional accuracy. Therefore, it is possible to prevent the liquid crystal element 40 and the colored layer 51a from being misaligned, resulting in extremely high definition. A display device can be realized.

[0262] In addition, the support substrate 44b is peeled off, and the substrate 41 having a thickness at least smaller than that of the support substrate 44b is removed. By attaching the colored layer 51a to the display device, a thin and lightweight display device can be realized. After forming the light shielding layer 52 and the like, the thin substrate 41b can be attached. As 1b, materials with poor heat resistance can be used, expanding the range of material choices and enabling the use of various materials. The substrate 41b can be made of a thin material. For example, compared to a case where a relatively thick (e.g., thicker than 0.3 mm) glass substrate is used, It is possible to realize a display device with excellent optical properties such as display contrast, color reproducibility, and viewing angle dependency. Cut.

[0263] This concludes the description of Preparation Method Example 1-3.

[0264] [Production Method Example 1-4] The display device illustrated in FIG. 6B is manufactured by the steps on the support substrate 44a side in the manufacturing method example 1-3. (From the step of forming the peeling layer 43a to the step of forming the alignment film 53a) is referred to as Fabrication Method Example 1-1. It can be produced by substituting the same method.

[0265] This concludes the description of Preparation Method Example 1-4.

[0266] [Production Method Example 1-5] An example of a method for manufacturing the display device illustrated in Cross-sectional Structure Example 1-5 and FIG. 6C will be described below. He explains.

[0267] First, the insulating layer 62, the light-shielding layer 52, the colored layer 51a, the colored layer 51b, and the insulating layer 62 are formed on the resin layer 45b. A layer 61, a conductive layer 25, and an alignment film 53b are formed (FIG. 16(A)).

[0268] In addition, a support substrate 44d is prepared. The support substrate 44d is the same as the support substrate 44a. Materials can be used.

[0269] Subsequently, a resin layer 45a is formed on the support substrate 44d.

[0270] To form the resin layer 45a, first, a material that will become the resin layer 45a is applied onto the support substrate 44d. Coating methods include spin coating, dip coating, spray coating, inkjet coating, dispensing, and scribing. Lean printing, offset printing, doctor knife, slit coat, roll coat, curtain Coating methods such as stencil coating and knife coating can be used.

[0271] The material is a polymerizable material that exhibits thermosetting properties (also called thermal polymerization properties) in which polymerization proceeds when heated. The material may further include a monomer. The material may further include a photosensitive material. It is preferred that a solvent is included to adjust the viscosity.

[0272] The materials in question include polyimide resin, acrylic resin, epoxy resin, and polyamide resin after polymerization. Resin, polyimide amide resin, siloxane resin, benzocyclobutene resin, phenol resin It is preferable that the resin layer 45a contains a polymerizable monomer that becomes a polymer. These resin materials are included. In particular, the material uses a polymerizable monomer having an imide bond. By using a resin such as polyimide resin for the resin layer 45a, heat resistance and weather resistance can be improved. This is preferable because it can improve the

[0273] Next, the support substrate 44d is heated to polymerize the applied material, thereby forming a resin layer 45a. At this time, the solvent in the material is removed by heating. It is preferable to heat the substrate 70 at a temperature higher than the maximum temperature required for the manufacturing process of the substrate 70. For example, 200°C or higher and 700°C or lower, or 300°C or higher and 600°C or lower, preferably 350°C or higher Heat at 550°C or less, more preferably 400°C to 500°C, typically 450°C. It is preferable that the resin layer 45a is heated at such a temperature while the surface is exposed during the formation of the resin layer 45a. By heating, gas that may be desorbed from the resin layer 45a can be removed. This can prevent gas from being desorbed during the manufacturing process of the transistor 70 and the like.

[0274] The thermal expansion coefficient of the resin layer 45a is 0.1 ppm / ° C. or more and 20 ppm / ° C. or less. It is preferable that the concentration is 0.1 ppm / °C or more and 10 ppm / °C or less, and more preferable that the concentration is 0.1 ppm / °C or more and 10 ppm / °C or less. The lower the thermal expansion coefficient of the resin layer 45a, the greater the stress caused by the expansion or contraction due to heating. This can prevent damage to transistors and the like.

[0275] Next, the insulating layer 82 is formed on the resin layer 45a. Similarly to method example 1-1, the conductive layers 71 to 23 are formed in this order.

[0276] Subsequently, the structures 14a and 14b are formed on the insulating layer 81. It is preferable that at least a part of the structure 14a and the structure 14b overlap the recess 50. I wish.

[0277] Thereafter, the conductive layer 23, the insulating layer 81, the alignment film 53 which covers the structures 14a and 14b, etc. Form b.

[0278] A schematic cross-sectional view at this stage corresponds to FIG. 16(B).

[0279] Next, the support substrate 44d and the resin layer 45b are bonded together in the same manner as described above. This can be done by law.

[0280] Next, light 20 (not shown) is irradiated from the support substrate 44d side to form the partition wall 11 ( Figure 16(C)).

[0281] Next, light 20a is irradiated from the support substrate 44d side (FIG. 17(A)). Due to the irradiation, the vicinity of the surface of the resin layer 45a on the side of the support substrate 44d or the inside of the resin layer 45a The portion is modified, and the adhesion between the support substrate 44d and the resin layer 45a decreases.

[0282] As the light 20a, a laser beam can be suitably used. For example, the laser beam may have a linear shape. It is preferable to use a laser and irradiate the laser light by scanning the laser. This makes it possible to reduce the process time when the area of ​​the support substrate 44d is increased. A flash lamp or the like may be used as long as it is capable of irradiating the same energy as the laser light.

[0283] Here, the light 20a used to reduce the adhesion of the resin layer 45a and the partition wall 11 are formed. It is preferable to use light having a different wavelength from the light 20 used for the partition wall 11. The light 20 used to form the resin layer 45a is light having a wavelength that is not easily absorbed by the resin layer 45a. More specifically, it is preferable to use light having a shorter wavelength than the light 20 as the light 20a. is preferred.

[0284] For example, the light 20 used to form the partition wall 11 has a wavelength of 350 nm or more. The light 20a used to reduce the adhesion of the resin layer 45a is a light having a wavelength of less than 350 nm. For example, the light 20 may be the third harmonic of a Nd:YAG laser. Solid-state UV lasers (also called semiconductor UV lasers) such as a 355 nm UV laser ), as well as solid-state UV lasers with wavelengths of 365 nm, 375 nm, or 380 nm. As the light 20a, an excimer laser having a wavelength of 308 nm is preferably used. An excimer laser is preferable because of its excellent productivity. The laser is also used for laser crystallization in LTPS, so the equipment of the existing LTPS production line can be used. This is preferable because it allows the use of existing equipment and does not require new capital investment.

[0285] Furthermore, a CW (Continuous wave) laser may be used as the laser. Alternatively, a pulsed laser may be used. The pulsed laser may be a nanosecond, picosecond, or femtosecond laser. or longer pulses (e.g., several hundred Hz or less). A laser can be used.

[0286] When a linear laser beam is used as the light 20a, the support substrate 44d and the light source are relatively The light 20a is scanned by moving the light 20a in a direction so that the light 20a is irradiated over the area to be peeled off. At this stage, when the entire surface on which the resin layer 45a is disposed is irradiated, the entire resin layer 45a is peeled off. In the subsequent separation process, the outer periphery of the support substrate 44d is cut by scribing or the like. Alternatively, the light 20a may not be irradiated to the outer periphery of the region where the resin layer 45a is disposed. When the region is provided, the adhesion in the region remains high, so that the resin layer 4 This is preferable because it is possible to prevent 5a from being separated from the support substrate 44d.

[0287] Next, the support substrate 44d and the resin layer 45a are separated (FIG. 17(B)).

[0288] The separation was performed by pulling the resin layer 45b in a direction perpendicular to the support substrate 44d while the resin layer 45b was fixed to the stage. For example, a part of the upper surface of the support substrate 44d is attracted to the support substrate 44d. The stage is then pulled upward to remove the resin layer 45b. Any structure may be used as long as the device can be fixed. For example, a device capable of vacuum or electrostatic adsorption may be used. Alternatively, a mechanism for physically retaining the resin layer 45b may be provided. is a force pulling the resin layer 45b in a vertical direction while the support substrate 44d is fixed to the stage. The mixture may be separated by applying a

[0289] In addition, the separation is performed by removing the drum-shaped member having a sticky surface from the support substrate 44d or the resin layer 45. Alternatively, the peeling may be performed by pressing the upper surface of b against the upper surface of b and rotating the same. The stage may be moved.

[0290] Next, the resin layer 45a and the substrate 41a are bonded together with the adhesive layer 42a. If 45a has sufficient thickness and mechanical strength, it is not necessary to attach the substrate 41a. .

[0291] Through the above steps, a display device can be manufactured (FIG. 17C). is the same as FIG. 6(C).

[0292] The above is the explanation of the example 1 of the manufacturing method.

[0293] [Production method example 2] [Production Method Example 2-1] An example of a method for manufacturing the display device shown in FIG. 7A will be described below with reference to FIGS. The following explanation will be given using each figure.

[0294] First, a release layer 43c is formed on the support substrate 44c. The same substrate as the plate 44a and the support substrate 44b can be used. It can be formed by the same method as the release layer 43a and the release layer 43b.

[0295] Next, the conductive layer 23a is formed on the peeling layer 43c. It is preferable to use a conductive material. The conductive layer 23a is preferably made of a conductive oxide material. Thus, peeling can be performed effectively at the interface between the conductive layer 23a and the peeling layer 43c. For example, a metal oxide or a low-resistance oxide semiconductor material can be used. .

[0296] When an oxide semiconductor material is used for the conductive layer 23a, the conductive layer 23a is heated by plasma treatment or heat treatment. The carrier density may be increased by generating oxygen vacancies in the oxide semiconductor material. Impurities such as hydrogen, nitrogen, and rare gases such as argon are introduced into the oxide semiconductor material. The carrier density may be increased by forming a conductive layer 23b on the conductive layer 23a. In addition, oxygen in the oxide semiconductor may be reduced by using a material through which oxygen easily diffuses. It is to be noted that two or more of the above methods may be applied.

[0297] Subsequently, the conductive layer 23b is formed on the conductive layer 23a. The conductive layer 23b may be made of a metal or A single layer structure or a laminate structure including an alloy material can be used. When a laminated structure is used, a material with high reflectivity is used for the layer in contact with the conductive layer 23a. is preferred.

[0298] At this time, the conductive layer 23b is arranged so as not to come into contact with the release layer 43c by removing the pattern of the conductive layer 23a. It is preferable that the conductive layer 23b and the release layer 43c are disposed on the inner side of the conductive layer 23b. If they come into contact, peeling failure may occur at that portion.

[0299] Next, the insulating layer 83 is formed to cover the peeling layer 43c, the conductive layer 23a, and the conductive layer 23b. At this time, an opening is formed in part of the insulating layer 83, reaching the conductive layer 23b.

[0300] A schematic cross-sectional view at this stage corresponds to FIG. 18(A).

[0301] Subsequently, the transistor 70a and the transistor 70b are formed on the insulating layer 83. These can be formed by the same method as in Configuration Example 1.

[0302] At this time, in the process of forming the gates of the transistors 70a and 70b, In addition, when the conductive film is processed after it is formed, the conductive film is exposed through the openings provided in the insulating layer 83. At the same time, a conductive layer electrically connected to 23b is formed. This forms the connection portion 80. It is possible.

[0303] In addition, one of the source and drain of the transistor 70a is electrically connected to the connection portion 80. An opening is formed in the insulating layer that functions as the gate insulating layer of the transistor 70a, etc. do.

[0304] Next, an insulating layer 81 is formed to cover the transistor 70a and the transistor 70b. At this time, an opening reaching either the source or the drain of the transistor 70b is formed in the insulating layer 81. Then, a conductive layer 91 is formed on the insulating layer 81.

[0305] A schematic cross-sectional view at this stage corresponds to FIG. 18(B).

[0306] Next, an insulating layer is formed on the conductive layer 91 so as to cover the end of the conductive layer 91 and to have an opening at the portion where the insulating layer 91 overlaps. The insulating layer 84 covers the end of the conductive layer 91 and also serves as a planarizing layer. It is preferable to use an organic resin as the insulating layer 84. It is preferable that the end portion has a tapered shape.

[0307] Next, the EL layer 92 and the conductive layer 93a are formed in this order on the conductive layer 91 and the insulating layer 84. Then, a conductive layer 93b is formed over the conductive layer 93a.

[0308] The conductive layer 93b is preferably formed to have an opening for transmitting the light 20. For example, a metal mask or other shadow mask is used to perform deposition or sputtering. By using any of the deposition methods, the conductive layer 93b having the opening can be formed.

[0309] Here, an example in which the conductive layer 93b is formed after the conductive layer 93a has been described. may be formed after conductive layer 93b.

[0310] Although not shown here, a barrier film is formed to cover the conductive layer 93a and the conductive layer 93b. A functional insulating layer may be formed. The insulating layer may be formed by a method such as sputtering or ALD. It is preferable to use a film forming method that can form a dense film even at a low temperature. Alternatively, the insulating film may have a laminated structure of a film containing an inorganic insulating material and a film containing an organic insulating material.

[0311] Next, the conductive layer 93a and the conductive layer 93b are bonded to the substrate 21 via the adhesive layer 89. .

[0312] A schematic cross-sectional view at this stage corresponds to FIG. 18(C).

[0313] Next, between the release layer 43c and the insulating layer 83, and between the release layer 43c and the conductive layer 23a Then, the support substrate 44c and the release layer 43c are removed (FIG. 18(D)).

[0314] After the peeling is completed, the peeling layer 43 is applied to the surface of the conductive layer 23a and the surface of the insulating layer 83. In some cases, a part of the c remains and a thin film is formed. For example, if the remaining film is conductive, In the case where the conductive layer 23a is disposed between adjacent pixels, the conductive layer 23a may be disposed between the adjacent pixels. There is a risk of electrical short-circuiting between terminals formed by processing the conductive film. In addition, if the thin film has insulating properties, the surfaces of the conductive layer 23a and the terminals are not exposed, These electrodes and terminals may lose their function. After that, it is preferable to perform cleaning, etching, wiping, etc. Wet etching or dry etching can be used.

[0315] Next, the conductive layer 23a is used as a hard mask to etch away a portion of the insulating layer 83. By removing the remaining part, the recess 50 is formed.

[0316] Thereafter, an alignment film 53a is formed on the conductive layer 23a and the insulating layer 83.

[0317] Next, the colored layer 51a, the colored layer 51b, the light-shielding layer 52, and the insulating layer 6 are formed on the substrate 31 in advance. 1. A substrate on which a conductive layer 25, a structure 14, and an alignment film 53b are formed is prepared. The plate 31 and the substrate 21 are bonded together with the liquid crystal layer 24 sandwiched therebetween (FIG. 19(A)).

[0318] At this time, the opening of the conductive layer 93b overlaps with the region between two adjacent conductive layers 23b. The conductive layer 93b can be disposed so that the opening overlaps the light-shielding layer 52. It is preferable that

[0319] Moreover, it is preferable to perform the bonding so that the structure 14 overlaps the recess 50. 4 is bonded to the recess 50, so that the positional deviation during bonding can be suppressed. This can be done.

[0320] After that, light 20 is irradiated from the substrate 21 side (FIG. 19(B)). At this time, the light 20 is The liquid crystal layer 24 can be irradiated in a self-aligned manner to the portion overlapping with the opening of the conductive layer 93b. In addition, since the light emitting element 90 has the conductive layer 93b on the substrate 21 side, Even if the light 20 is irradiated, the light 20 is prevented from being irradiated onto the EL layer 92 in the light emitting element 90. This makes it possible to prevent the light emitting element 90 from being deteriorated.

[0321] Although not shown here, the conductive layer 23b and wiring, etc. overlap the opening of the conductive layer 93b. When the light 20 is placed in the conductive layer 23b or the wiring, a part of the light 20 is blocked by the conductive layer 23b or the wiring. That is, the partition wall 11 is disposed in a region that does not overlap the conductive layer 23b, the conductive layer 93b, the wiring, etc. is formed.

[0322] Through the above steps, the display device shown in FIG. 7A can be manufactured.

[0323] [Variation 1] An example of a method for manufacturing the display device shown in FIG. In the step of bonding the substrate 21 with the adhesive layer 89 in the method 2-1, Alternatively, instead of the substrate 31, a release layer and an insulating layer may be provided on the support substrate. The partition wall 11 is formed by laminating the layer 62 on the substrate, and then the support substrate and the peeling layer Then, the insulating layer 62 and the substrate 41b are bonded together with the adhesive layer 42b.

[0324] In FIG. 7A, the substrate 21 is used as it is, and only the substrate 31 side is covered with an insulating layer 62. Alternatively, the laminated structure of the adhesive layer 42b and the substrate 41b may be replaced with the laminated structure.

[0325] The above is an explanation of the first modification.

[0326] [Production Method Example 2-2] An example of a method for manufacturing the display device shown in FIG. 8A will be described below with reference to FIGS. The following explanation will be given using each figure.

[0327] First, a release layer 43c is formed on a support substrate 44c, and a conductive layer 91 is formed on the release layer 43c. The conductive layer 91 is formed by using the same material and method as the conductive layer 23a. It is possible.

[0328] Next, the insulating layer 83 is formed to cover the conductive layer 91 and the peeling layer 43c. An opening is formed in 83 reaching the conductive layer 91 .

[0329] Then, the transistor 70a and the transistor 70b are formed on the insulating layer 83. At this time, in the process of forming the gates of the transistors 70a and 70b, A conductive layer that is electrically connected to the conductive layer 91 is simultaneously formed to form the connection portion 80.

[0330] Next, after forming an insulating layer 81, a conductive layer 23 is formed on the insulating layer 81. At the same time as processing the conductive layer 23, a part of the insulating layer 81 is removed by etching to form a recess 50. Thereafter, an alignment film 53a is formed to cover the conductive layer 23 and the insulating layer 81.

[0331] A schematic cross-sectional view at this stage corresponds to FIG. 20(A).

[0332] Next, the support substrate 44c and the substrate 31 are bonded together with the liquid crystal layer 24 sandwiched therebetween in the same manner as above. Paste them together (Figure 20(B)).

[0333] Thereafter, light 20 is applied from the support substrate 44c side to form partition walls 11 in the liquid crystal layer 24. (Figure 20(C)).

[0334] At this time, in the region overlapping with the opening of the conductive layer 23, the support substrate 44c and the liquid crystal layer 24 Since there is no material between the liquid crystal layer and the target area that blocks the light 20, the liquid crystal layer overlaps the target area as shown in FIG. The light 20 is also irradiated onto a portion of the layer 24. As a result, the partition wall 11 overlapping the opening of the conductive layer 23 is formed.

[0335] Next, peeling is performed between the release layer 43c and the insulating layer 83, and between the release layer 43c and the conductive layer 91. Then, the support substrate 44c and the peeling layer 43c are removed (FIG. 21(A)). The surface may be subjected to a treatment such as cleaning.

[0336] Next, the conductive layer 91 and the insulating layer 83 are covered with an EL layer 92, a conductive layer 93b, and a conductive layer 93a is formed (FIG. 21(B)).

[0337] In this case, the conductive layer 93b may be formed after the conductive layer 93a. After the conductive layer 93b is formed, an insulating layer functioning as a barrier film may be formed.

[0338] Subsequently, the conductive layer 93a and the substrate 21 are bonded together using the adhesive layer 89.

[0339] Through the above steps, the display device shown in FIG. 8A can be manufactured.

[0340] [Modification 2] An example of a method for manufacturing the display device shown in FIG. In the step of bonding the substrate 21 with the adhesive layer 89 in the method 2-2, Alternatively, instead of the substrate 31, a release layer and an insulating layer may be provided on the support substrate. The partition wall 11 is formed by laminating the layer 62 on the substrate, and then the support substrate and the peeling layer Then, the insulating layer 62 and the substrate 41b are bonded together with the adhesive layer 42b.

[0341] In FIG. 8A, the substrate 21 is used as it is, and only the substrate 31 side is covered with an insulating layer 62. Alternatively, the laminated structure of the adhesive layer 42b and the substrate 41b may be replaced with the laminated structure.

[0342] The above is an explanation of the second modification.

[0343] [Preparation Method Example 2-3] An example of a method for manufacturing the display device illustrated in Cross-sectional Structure Example 2-3 will be described below with reference to FIGS. The following will be explained with reference to each diagram in FIG.

[0344] First, in the same manner as in the above-mentioned manufacturing method example 2-1, a release layer 43c and a conductive layer 23 are formed on a support substrate 44c. a, a conductive layer 23b, and an insulating layer 83 having an opening are formed (FIG. 22(A)).

[0345] Next, the transistor 70a is formed on the insulating layer 83, and then the transistor 70a is covered. Thus, an insulating layer 81 is formed (FIG. 22(B)).

[0346] Next, the support substrate 44e is bonded to the insulating layer 81 using the adhesive layer 46a (FIG. 22( C) The support substrate 44e may be made of the same material as the support substrate 44a. In addition, it is preferable that the adhesive layer 46a is made of a material that can be easily peeled off later. For example, the adhesive layer 46a may be a sticky material, a double-sided tape, a silicone sheet, or a water-soluble For example, a highly adhesive agent or the like can be used.

[0347] Next, between the release layer 43c and the insulating layer 83, and between the release layer 43c and the conductive layer 23a Then, the support substrate 44c and the release layer 43c are removed (FIG. 22(D)).

[0348] Next, the conductive layer 23a is used as a hard mask to etch away a portion of the insulating layer 83. By removing the remaining part, the recess 50 is formed.

[0349] Thereafter, an alignment film 53a is formed on the conductive layer 23a and the insulating layer 83 (FIG. 22(E)). .

[0350] Next, the colored layer 51a, the colored layer 51b, the light-shielding layer 52, and the insulating layer 6 are formed on the substrate 31 in advance. 1. A substrate on which a conductive layer 25, a structure 14, and an alignment film 53b are formed is prepared. The plate 31 and the substrate 21 are bonded together with the liquid crystal layer 24 sandwiched therebetween.

[0351] Thereafter, light 20 (not shown) is irradiated from the support substrate 44e side to form the partition wall 11 ( Figure 23(A)).

[0352] Next, the adhesive layer 46a and the support substrate 44e are removed (FIG. 23(B)).

[0353] In addition to the above, a support substrate 44f is prepared. A release layer 43d is formed on the support substrate 44f. Insulating layer 86, transistor 70b (including insulating layer 87), insulating layer 88, conductive layer 91, insulating The layer 84 and the light emitting element 90 are formed in this order. Then, the light emitting element 90 is covered with an adhesive layer 89. The substrate 21 is attached (FIG. 24(A)).

[0354] Next, the release layer 43d and the support substrate 44f are removed (FIG. 24(B)).

[0355] Thereafter, the substrate 21 and the substrate 31 are bonded together using an adhesive layer 99 (FIG. 24(C)).

[0356] Through the above steps, a display device can be manufactured. This is the same diagram.

[0357] By using such a manufacturing method, when forming the alignment film 53a, the light emitting element 90 Since the alignment film 53a does not have a high temperature, the alignment film 53a can be formed at a high temperature (for example, a temperature of 100° C. or higher). This makes it possible to form a better quality alignment film 53a.

[0358] [Production Method Example 2-4] In the following, an example of a method for manufacturing the display device illustrated in Cross-sectional Configuration Example 2-4 will be described with reference to each of FIGS. The following will explain the differences from the manufacturing method example 2-3.

[0359] As shown in FIG. 25A, a transistor 70b (including an insulating layer 87) is provided on a substrate 21. An insulating layer 88, a conductive layer 91, an insulating layer 84, an EL layer 92, and a conductive layer 93 are formed in this order.

[0360] Next, the substrate 21 and the substrate 31 are bonded together with an adhesive layer 89 to form a display device. (FIG. 25(B)). FIG. 25(B) is the same as FIG. 9(B).

[0361] This concludes the description of Preparation Method 2.

[0362] [About each component] Each of the above components will be described below.

[0363] A material having a flat surface can be used for the substrate of the display device. The substrate from which the light is extracted is made of a material that transmits the light. For example, glass, quartz, ceramic, etc. Materials such as tantalum, sapphire, and organic resins can be used.

[0364] By using a thin substrate, the display device can be made lighter and thinner. In addition, by using a substrate that is thick enough to provide flexibility, a flexible display device can be realized. Cut.

[0365] In addition, the substrate on the side from which light is not extracted does not need to have light-transmitting properties. In addition to the above-mentioned substrate, a metal substrate or the like can also be used. Metal substrates have high thermal conductivity and the entire substrate Since heat can be easily conducted to the body, local temperature rise of the display device can be suppressed, which is preferable. In order to obtain flexibility and bendability, the thickness of the metal substrate is preferably 10 μm or more and 200 μm or less. It is preferable that the thickness is less than 20 μm, and more preferable that the thickness is not less than 50 μm.

[0366] The material constituting the metal substrate is not particularly limited, but examples thereof include aluminum, copper, and nickel. Metals such as nickel, or alloys such as aluminum alloys and stainless steel are preferably used. It is possible.

[0367] In addition, the surface of the metal substrate is oxidized or an insulating film is formed on the surface to perform insulation treatment. For example, a coating method such as spin coating or dipping, an electrodeposition method, or the like may be used. The insulating film may be formed by deposition, evaporation, sputtering, or the like. In addition to leaving it in air or heating it, an oxide film is formed on the surface of the substrate by anodizing, etc. This is also fine.

[0368] Examples of materials having flexibility and transparency to visible light include materials having flexibility. Thickness of glass, polyethylene terephthalate (PET), polyethylene naphthalate Polyester resins such as (PEN), polyacrylonitrile resins, polyimide resins, methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PE S) Resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamide imide resin, polyvinyl chloride resin, polytetrafluoroethylene (PTFE) resin, etc. In particular, it is preferable to use a material with a low thermal expansion coefficient. ×10 -6 Polyamide-imide resin, polyimide resin, PET, etc., with a molecular weight of 0.1 to 1.0 kg / K or less, are preferably used. In addition, it is possible to use a substrate in which glass fibers are impregnated with organic resin, or an organic substrate in which inorganic fillers are It is also possible to use a substrate with a lower thermal expansion coefficient by mixing it with resin. Since the substrate is light in weight, the display device using the substrate can also be made light in weight.

[0369] When the above-mentioned materials contain fibrous bodies, the fibrous bodies are made of high strength organic or inorganic compounds. High strength fibers are specifically fibers with high tensile modulus or Young's modulus. Representative examples are polyvinyl alcohol fibers, polyester fibers, and polyvinyl alcohol fibers. Mid fiber, polyethylene fiber, aramid fiber, polyparaphenylene benzobisoxy Examples of the fiberglass include Sasol fiber, glass fiber, and carbon fiber. Examples of glass fibers include those made of glass fiber such as sappan, S-glass, D-glass, and Q-glass. Alternatively, it is used in the form of a nonwoven fabric, and the structure in which the fiber body is impregnated with resin and the resin is hardened is formed by using a microfiber. The flexible substrate may be a substrate made of a fiber and a resin. The use of such a structure is preferred because it improves reliability against damage caused by bending or localized pressure. It is.

[0370] Alternatively, glass, metal, or the like that is thin enough to be flexible may be used for the substrate. Alternatively, a composite material in which glass and a resin material are bonded together with an adhesive layer may be used.

[0371] A hard coat layer (e.g., , silicon nitride, aluminum oxide, etc.) or a layer of material capable of dispersing pressure (e.g., aramid In addition, the life of the display element may be reduced due to moisture, etc. In order to suppress this, an insulating film with low water permeability may be laminated on a flexible substrate. For example, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, nitride An inorganic insulating material such as aluminum can be used.

[0372] The substrate may be formed by laminating a plurality of layers. In particular, the substrate may have a glass layer. By this, the barrier properties against water and oxygen can be improved, and a highly reliable display device can be obtained.

[0373] [Transistor] The transistor includes a conductive layer functioning as a gate electrode, a semiconductor layer, and a A conductive layer that functions as a drain electrode and a conductive layer that functions as a gate insulating layer. The above describes the case where a bottom-gate transistor is used. is.

[0374] Note that the structure of a transistor included in a display device of one embodiment of the present invention is not particularly limited. For example, a planar type transistor or a staggered type transistor may be used. Alternatively, the transistor may be an inverted staggered type. Also, the transistor may be a top gate type or a bottom gate type. Alternatively, gate electrodes may be provided above and below the channel. It may be possible to do so.

[0375] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a partially crystalline region) If a semiconductor having crystallinity is used, the This is preferable because it is possible to suppress deterioration of the resistor characteristics.

[0376] In addition, the semiconductor material used in the transistor is, for example, a Group 14 element (silicon For the semiconductor layer, a compound semiconductor or an oxide semiconductor can be used. Typically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, or an oxide containing indium A compound semiconductor or the like can be used.

[0377] In particular, it is preferable to use an oxide semiconductor having a band gap larger than that of silicon. If a semiconductor material with a wider band gap and lower carrier density than silicon is used, This is preferable because it is possible to reduce the current in the off state of the transistor.

[0378] In particular, the semiconductor layer has a plurality of crystal parts, and the crystal parts have a c-axis aligned with a surface on which the semiconductor layer is formed. Or, the crystals are oriented approximately perpendicular to the upper surface of the semiconductor layer, and grain boundaries are observed between adjacent crystal parts. It is preferable to use an oxide semiconductor that cannot be used.

[0379] Such an oxide semiconductor does not have crystal grain boundaries, so that when the display panel is curved, The occurrence of cracks in the oxide semiconductor film due to stress is suppressed. Such oxide semiconductors are suitable for use in flexible display devices that are used in a curved state. It is possible.

[0380] In addition, by using such a crystalline oxide semiconductor for the semiconductor layer, This suppresses fluctuations in the capacitance, thereby achieving a highly reliable transistor.

[0381] In addition, a transistor using an oxide semiconductor having a larger band gap than silicon is The low off-state current allows the charge stored in the capacitor connected in series with the transistor to be maintained for a long time. By applying such a transistor to a pixel, This makes it possible to stop the driving circuit while maintaining the gradation of each pixel. This makes it possible to realize a display device with reduced power consumption.

[0382] The semiconductor layer and the conductive layer may contain the same metal element among the above oxides. By using the same metal element for the conductor layer and the conductive layer, the manufacturing cost can be reduced. For example, by using metal oxide targets of the same metal composition, the manufacturing cost can be reduced. In addition, the etching gas or the etching gas used for processing the semiconductor layer and the conductive layer can be used. However, the semiconductor layer and the conductive layer have the same metal element. For example, the composition may differ during the manufacturing process of a transistor or a capacitor. In some cases, metal elements in the film may be released, resulting in a different metal composition.

[0383] The oxide semiconductor constituting the semiconductor layer has an energy gap of 2 eV or more, preferably 2 It is preferable that the energy is 0.5 eV or more, and more preferably 3 eV or more. The off-state current of a transistor can be reduced by using an oxide semiconductor with a wide gap. can be done.

[0384] When the oxide semiconductor constituting the semiconductor layer is In-M-Zn oxide, The atomic ratio of metal elements in the sputtering target used to deposit a film is In≧M It is preferable that Zn≧M is satisfied. The atomic ratios are In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In The preferred ratio is M:Zn=3:1:2, 4:2:4.1, etc. The atomic ratio of the metal elements contained in the sputtering target is included as an error. This includes a fluctuation of plus or minus 40% in the child ratio.

[0385] For the semiconductor layer, an oxide semiconductor film having a low carrier density is used. For example, , the carrier density is 1×10 17 / cm 3 Less than or equal to 1×10 15 / cm 3 Below, More preferably, 1×10 13 / cm 3 Less than or equal to 1×10 11 / cm 3 below, More preferably, 1×10 10 / cm 3 Less than 1 x 10 -9 / cm 3 More than 10 ... Such oxide semiconductors can be used as high-purity intrinsic or substantially high-purity oxide semiconductors. This is called an intrinsic oxide semiconductor. This has a low impurity concentration and a low defect state density. Therefore, it can be said that the oxide semiconductor has stable characteristics.

[0386] In addition, the semiconductor characteristics and electrical characteristics (field effect) of the required transistors are not limited to these. It is sufficient to use a material with an appropriate composition according to the required properties (e.g., the resultant mobility, threshold voltage, etc.). In order to obtain the semiconductor characteristics of a transistor, the carrier density, impurity concentration, and defect density of the semiconductor layer are determined. It is preferable to appropriately set the density, atomic ratio of metal elements to oxygen, interatomic distance, density, etc. stomach.

[0387] In the oxide semiconductor that constitutes the semiconductor layer, silicon and carbon, which are group 14 elements, If oxygen is contained in the semiconductor layer, oxygen vacancies increase and the semiconductor layer becomes n-type. The concentrations of silicon and carbon in the body layer (obtained by secondary ion mass spectrometry) were ×10 18 atoms / cm 3 Less than or equal to 2 x 10 17 atoms / cm 3 Below and do.

[0388] In addition, when alkali metals and alkaline earth metals combine with oxide semiconductors, they generate carriers. This may result in an increase in the off-state current of the transistor. Alkaline or alkaline earth metals in body layers obtained by secondary ion mass spectrometry. The concentration of is 1×10 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 To the following:

[0389] In addition, when nitrogen is contained in the oxide semiconductor that constitutes the semiconductor layer, the electron This causes an increase in carrier density, making it easier to convert to n-type. Transistors using semiconductors tend to be normally-on. The nitrogen concentration obtained by secondary ion mass spectrometry in 18 atoms / cm 3 It is preferable to do the following:

[0390] The semiconductor layer may also have a non-single crystal structure, for example. -OS(C-Axis Aligned Crystalline Oxide Sem iconductor, or C-Axis Aligned and AB-pl Anchored Crystalline Oxide Semicondu ctor), a polycrystalline structure, a microcrystalline structure, or an amorphous structure. In the non-single crystal structure , the amorphous structure has the highest density of defect levels, and CAAC-OS has the lowest density of defect levels.

[0391] The oxide semiconductor film having an amorphous structure has, for example, a disordered atomic arrangement and no crystal component. Or, the oxide film having an amorphous structure is, for example, a completely amorphous structure and has no crystal part.

[0392] Note that the semiconductor layer may be a mixed film having two or more of an amorphous structure region, a microcrystalline structure region, a polycrystalline structure region, a CAA C-OS region, and a single crystal structure region. The mixed film may have, for example, a single layer structure or a stacked layer structure including two or more of the above-described regions.

[0393] <Configuration of CAC-OS> Hereinafter, the configuration of CAC (Cloud-Aligned Composite)-OS that can be used for the transistor disclosed in one aspect of the present invention will be described.

[0394] CAC-OS is, for example, a composition in which the elements constituting the metal oxide are unevenly distributed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or less, or in the vicinity thereof. Note that hereinafter, in the metal oxide, one or more metal elements are unevenly distributed, and the region having the metal element is mixed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or less, or in the vicinity thereof, and this state is also referred to as a mosaic state or a patch state.

[0395] ​​​​​​​​The metal oxide preferably contains at least indium. In addition to these, aluminum, gallium, yttrium, and zinc are preferably contained. Thorium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, Rumanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, Contains one or more of the following: tantalum, tungsten, or magnesium. It may be included.

[0396] For example, CAC-OS in In-Ga-Zn oxide (In- The Ga-Zn oxide may be specifically referred to as CAC-IGZO. (hereinafter referred to as InO X1 (X1 is a real number greater than 0.) or Indium Zinc Oxide (hereinafter, In X2 Zinc Y2 O Z2 (X2, Y2, and Z2 are real numbers greater than 0. ) and gallium oxide (GaO X3 (X3 is a real number greater than 0) ), or gallium zinc oxide (Ga X4 Zinc Y4 O Z4 (X4, Y4, and Z1 and Z2 are real numbers greater than 0.) The material is separated into a mosaic pattern. The mosaic-like InO X1 , or In X2 Zinc Y2 O Z2 is uniformly distributed in the film. This is a configuration (hereinafter also referred to as a cloud-like configuration).

[0397] In other words, CAC-OS is X3 The region where In is the main component and X2 Zinc Y2 OZ2 , or InO X1 A composite metal oxide having a structure in which a region in which In this specification, for example, the atomic ratio of In to the element M in the first region is is greater than the atomic ratio of In to the element M in the second region. Assume that the In concentration is higher than in region 2.

[0398] IGZO is a common name and refers to a compound made of In, Ga, Zn, and O. A typical example is InGaO3(ZnO). m1 (m1 is a natural number), or In (1+x0) Ga (1-x0) O3(ZnO) m0 (-1≦x0≦1, m0 is an arbitrary number) Examples of the crystalline compound include those represented by the following formula:

[0399] The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure. The CAAC structure is a structure in which multiple IGZO nanocrystals have a c-axis orientation and are aligned on the ab plane. In the case of ZnO, the crystal structure is non-oriented and connected.

[0400] On the other hand, CAC-OS is a material structure of metal oxide. In a material composition containing a, Zn, and O, some of the nanoparticles are observed to be mainly composed of Ga. The regions where the In nanoparticles are observed are the same as those where the In nanoparticles are observed as the main component. This refers to a structure in which the crystals are randomly distributed in a mosaic pattern. Structure is a secondary factor.

[0401] Note that CAC-OS does not include a laminated structure of two or more films with different compositions. For example, a structure consisting of two layers, one containing In as the main component and the other containing Ga as the main component, Not at all.

[0402] In addition, GaO X3 The region where In is the main component and X2 Zinc Y2 O Z2 , or InO X1 In some cases, it may be difficult to observe a clear boundary between the region in which the main component is the

[0403] Instead of gallium, aluminum, yttrium, copper, vanadium, and beryllium are used. Aluminum, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium If one or more selected species from the group consisting of uranium, uranium, etc. are included, CAC-OS will In one area, the metal element is observed as a nanoparticle, and in another area, In is observed as a nanoparticle. The nanoparticle-like regions are randomly distributed in a mosaic pattern. This refers to.

[0404] CAC-OS is formed by sputtering without intentionally heating the substrate. In addition, when the CAC-OS is formed by a sputtering method, the deposition gas The gas is selected from an inert gas (typically argon), oxygen gas, and nitrogen gas. One or more of these may be used. The lower the flow rate ratio of the gas, the more preferable. For example, the flow rate ratio of oxygen gas is preferably 0% or more and less than 30%. Or, it is preferable to set it to 0% or more and 10% or less.

[0405] CAC-OS is a method for measuring X-ray diffraction (XRD). When measured using the out-of-plane θ / 2θ scan, In other words, no clear peaks are observed in the measurement area from the X-ray diffraction. It can be seen that the orientation of the regions in the ab plane direction and the c-axis direction is not observed.

[0406] In addition, CAC-OS uses an electron beam with a probe diameter of 1 nm (also called a nanobeam electron beam). In the electron beam diffraction pattern obtained by irradiating the sample, a ring-shaped region of high brightness and the corresponding Several bright spots are observed in the ring region. Therefore, the electron diffraction pattern indicates that the CAC-OS The crystal structure of nc (nano- It can be seen that the crystalline structure is

[0407] For example, in the CAC-OS of In-Ga-Zn oxide, the energy dispersive X Energy Dispersive X-ray spectroscopy (EDX) The EDX mapping obtained using scopy revealed that GaO X3 The area where is the main component And, In X2 Zinc Y2 O Z2 , or InO X1 The areas where the main component is It can be confirmed that the compound has a structure similar to that shown in FIG.

[0408] CAC-OS has a structure different from that of IGZO compounds in which metal elements are uniformly distributed. It has different properties from GZO compounds. That is, CAC-OS is GaO X3 The main components are and the region where In X2 Zinc Y2 O Z2 , or InO X1 The region where is the main component and the region where is The phase is gradually separated, and the regions each consisting of one element as a main component are arranged in a mosaic pattern.

[0409] Here, In X2 Zinc Y2 O Z2 , or InO X1 The area where GaO is the main component X This is a region with high conductivity compared to the region where In 3 is the main component. X2 Zinc Y2 O Z2 , or InO X1 The carriers flow through the area where the main component is gold. Therefore, the conductivity of In is expressed as a metal oxide. X2 Zinc Y2 O Z2 , or InO X The regions where 1 is the main component are distributed in a cloud-like shape in the metal oxide, which leads to high field effect transfer. Mobility (μ) can be achieved.

[0410] On the other hand, GaO X3 The region where the main components are In X2 Zinc Y2 O Z2 , or InO X1 This region has higher insulating properties than the region where GaO is the main component. X3 etc. The distribution of the region in which the main component is is in the metal oxide suppresses leakage current and provides good switching performance. Switching operation can be achieved.

[0411] Therefore, when CAC-OS is used in a semiconductor device, GaO X3 Insulation and , In X2 Zinc Y2 O Z2 , or InO X1 The conductivity caused by the This results in a high on-state current (I on), and high field-effect mobility (μ) can be done.

[0412] In addition, semiconductor devices using CAC-OS have high reliability. It is ideal for a variety of semiconductor devices including displays.

[0413] Alternatively, silicon is preferably used as a semiconductor in which a channel of a transistor is formed. Although amorphous silicon may be used as silicon, silicon having crystallinity is particularly preferred. It is preferable to use silicon. For example, microcrystalline silicon, polycrystalline silicon, single crystal silicon, etc. In particular, polycrystalline silicon has a lower temperature than single crystal silicon. It has high field effect mobility and high reliability compared to amorphous silicon. By applying such a polycrystalline semiconductor to the pixels, the aperture ratio of the pixels can be improved. Even when an extremely high-resolution display is required, the gate drive circuit and the source drive circuit This makes it possible to form the circuits and pixels on the same substrate, reducing the number of parts that make up electronic devices. It is possible.

[0414] The bottom-gate transistor described in this embodiment can reduce the manufacturing process. In addition, the use of amorphous silicon in this case is preferable compared to polycrystalline silicon. Since it can be formed at low temperatures, it is highly resistant and can be used as a material for wiring and electrodes below the semiconductor layer, and as a material for substrates. The possibility of using low-heat materials allows for a wider range of material choices. For example, a very large glass substrate can be used. Since the impurity region of the transistor is easily formed in a self-aligned manner, the characteristics of the transistor are not uniform. In this case, it is preferable to use polycrystalline silicon or single crystal silicon. This is suitable for use in situations where

[0415] [Conductive Layer] In addition to the gates, sources, and drains of transistors, various wiring and Materials that can be used for the conductive layers such as electrodes include aluminum, titanium, chromium, and titanium alloys. Aluminum, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or thallium Examples of the metals include tin and tin oxide, and alloys containing tin as the main component. Films containing the materials can be used as single layers or as multilayer structures. For example, silicon A single-layer structure of an aluminum film containing titanium, a two-layer structure of an aluminum film laminated on a titanium film, A two-layer structure in which an aluminum film is laminated on a stainless steel film, and a copper-magnesium-aluminum alloy Two-layer structure with copper film laminated on gold film, two-layer structure with copper film laminated on titanium film, tungsten A two-layer structure in which a copper film is laminated on top of a titanium film or titanium nitride film is laminated on top of that with an aluminum film. A titanium or copper film is laminated on top of the titanium or titanium nitride film. Layer structure, molybdenum film or molybdenum nitride film, and aluminum film or A three-layer structure in which a copper film is laminated and a molybdenum film or molybdenum nitride film is further formed on top of the copper film. Incidentally, oxides such as indium oxide, tin oxide, and zinc oxide may also be used. In addition, the use of copper containing manganese is preferable because it improves the controllability of the shape by etching. .

[0416] Examples of the conductive material having a light-transmitting property include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides such as indium zinc oxide, zinc oxide, zinc oxide doped with gallium, or Graphene can be used. Alternatively, gold, silver, platinum, magnesium, nickel, tin, etc. such as tin, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium. Metallic materials and alloy materials containing the metallic materials can be used. Alternatively, a metal material, an alloy material (or a combination thereof) may be used. In the case of using these nitrides, it is sufficient to make them thin enough to have light transmission. A laminated film of a material can be used as the conductive layer. For example, a silver-magnesium alloy and an insulator can be used. It is preferable to use a laminated film of dilute tin oxide or the like, since the electrical conductivity can be increased. These include conductive layers such as various wiring and electrodes that constitute the display device, and conductive layers of the display element. The conductive layer may also be used as a pixel electrode or a common electrode.

[0417] [Insulating layer] Examples of insulating materials that can be used for each insulating layer include acrylic and epoxy. In addition to resins and resins with siloxane bonds, silicon oxide, silicon oxynitride, silicon oxynitride Inorganic insulating materials such as silicon, silicon nitride, and aluminum oxide can also be used.

[0418] In addition, it is preferable that the light emitting element is provided between a pair of insulating films having low water permeability. This makes it possible to prevent impurities such as water from entering the light emitting element, and thus prevents a decrease in the reliability of the device. Can be controlled.

[0419] Insulating films with low water permeability include silicon nitride films and silicon oxynitride films, which are made of nitrogen and silicon. and films containing nitrogen and aluminum, such as an aluminum nitride film. A silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may also be used.

[0420] For example, the water vapor permeability of a low-permeability insulating film is 1×10 -5 [g / (m 2 ·day) ] or less, preferably 1 × 10 -6 [g / (m 2 ·day)] or less, preferably 1×1 0 -7 [g / (m 2 ·day)] or less, and more preferably 1×10 -8 [g / (m 2 d ay)] below.

[0421] [Liquid crystal element] The liquid crystal element may be, for example, a vertical alignment (VA) A liquid crystal element in which the vertical alignment mode is applied can be used. Multi-Domain Vertical Alignment mode, PVA( Patterned Vertical Alignment) mode, ASV (Adv Anced Super View mode, etc. can be used.

[0422] In addition, the liquid crystal element may be a liquid crystal element to which various modes are applied. For example, in addition to VA mode, TN (Twisted Nematic) mode, IPS (In -Plane-Switching mode, FFS (Fringe Field Switching) mode itching) mode, ASM(Axially Symmetric aligne) d Micro-cell mode, OCB (Optically Compensated ed Birefringence mode, FLC (Ferroelectric L iquid Crystal mode, AFLC (AntiFerroelectric) Liquid Crystal mode, ECB (Electrically Con trolled birefringence mode, guest host mode, etc. are applied. A liquid crystal element having such a structure can be used.

[0423] The liquid crystal element is a device that controls the transmission or non-transmission of light by the optical modulation action of liquid crystal. The optical modulation of liquid crystals is achieved by the electric field applied to the liquid crystal (horizontal electric field, vertical electric field). The liquid crystal used in the liquid crystal element is These include thermotropic liquid crystal, low molecular weight liquid crystal, polymer liquid crystal, and polymer dispersed liquid crystal (PDLC: Polymer Dispersed Liquid Crystal), polymer net Workpiece type liquid crystal (PNLC: Polymer Network Liquid Crystal al), ferroelectric liquid crystal, antiferroelectric liquid crystal, etc. can be used. These liquid crystal materials include Depending on the conditions, it can be in cholesteric, smectic, cubic, or chiral nematic phases. phase, isotropic phase, etc.

[0424] As the liquid crystal material, either a positive type liquid crystal or a negative type liquid crystal may be used. It is only necessary to use an optimum liquid crystal material depending on the mode and design to be applied.

[0425] In addition, an alignment film can be provided to control the alignment of the liquid crystal. When adopting this method, liquid crystals exhibiting a blue phase without using an alignment film may be used. When the temperature of a cholesteric liquid crystal is increased, the cholesteric phase changes to the isotropic phase. The blue phase appears only in a narrow temperature range, so it is difficult to distinguish between the two. In order to improve the range, a liquid crystal composition containing a chiral agent of several weight percent or more is used in the liquid crystal layer. A liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a short response time and optically isotropic In addition, the liquid crystal composition containing the liquid crystal exhibiting the blue phase and the chiral agent does not require alignment treatment. In addition, no alignment film is required, and the viewing angle dependency is small. This prevents electrostatic damage caused by rubbing, and This can reduce defects and damage to the liquid crystal display device during the manufacturing process.

[0426] The liquid crystal element may be a transmissive liquid crystal element, a reflective liquid crystal element, or a semi-transmissive liquid crystal element. An element or the like can be used.

[0427] In one embodiment of the present invention, a reflective liquid crystal element can be used in particular.

[0428] When using a transmissive or semi-transmissive liquid crystal element, two polarizing A backlight is provided on the outer side of one of the polarizing plates. The backlight may be a direct-light type or an edge-light type. Using a direct-type backlight with LEDs makes local dimming easy. This is preferable because it can increase the contrast. The use of a light is preferable because it allows the thickness of the module including the backlight to be reduced.

[0429] When using a reflective liquid crystal element, a polarizing plate is provided on the display surface side. It is preferable to place a light diffusion plate on the display surface side, since this improves visibility.

[0430] [Light-emitting element] The light-emitting element may be a self-emitting element that is illuminated by a current or a voltage. The category includes devices whose light intensity can be controlled. For example, light-emitting diodes (LEDs), organic An EL element, an inorganic EL element, etc. can be used.

[0431] The light-emitting elements are top emission type, bottom emission type, and dual emission type. The electrode that extracts the light uses a conductive film that transmits visible light. For the electrode on the side from which light is not extracted, it is preferable to use a conductive film that reflects visible light.

[0432] In one embodiment of the present invention, a bottom emission type light-emitting element can be used in particular.

[0433] The EL layer has at least a light-emitting layer. The light-emitting layer contains at least a light-emitting substance. In the present invention, a layer other than the light-emitting layer may include a material having a high hole injection property, a material having a high hole transport property, a material having a high hole blocking property, materials with high electron transport properties, materials with high electron injection properties, or bipolar materials (electron The layer may further include a layer containing a substance having high transport and hole-transport properties.

[0434] The EL layer can be made of either low molecular weight compounds or high molecular weight compounds. Each of the layers constituting the EL layer may be formed by deposition (including vacuum deposition). The insulating layer can be formed by a method such as a transfer method, a printing method, an ink-jet method, or a coating method.

[0435] When a voltage higher than the threshold voltage of the light-emitting element is applied between the cathode and anode, the EL layer is charged from the anode side. Holes are injected from the cathode side, and electrons are injected from the cathode side. The injected electrons and holes are These molecules recombine and the luminescent material contained in the EL layer emits light.

[0436] When a white-emitting light-emitting element is used as the light-emitting element, two or more types of light-emitting elements are used in the EL layer. For example, the light emitted by two or more luminescent materials may be of complementary colors. By selecting a light-emitting material so as to satisfy the above relationship, white light can be obtained. For example, Luminescent substances that emit light of R (red), G (green), B (blue), Y (yellow), O (orange), etc. Or, among luminescent materials that emit light containing two or more of the spectral components of R, G, and B, It is preferable that the spectrum of the light emitted from the light emitting element is in the visible light region. A light emitting element having two or more peaks within a wavelength range (e.g., 350 nm to 750 nm) is used. It is preferable to use a material having a peak in the yellow wavelength region. Preferably, the material has spectral components in the green and red wavelength regions as well.

[0437] The EL layer is made up of a light-emitting layer containing a light-emitting material that emits one color and a light-emitting layer containing a light-emitting material that emits another color. For example, a plurality of light-emitting layers in the EL layer are preferably laminated. The layers may be stacked in contact with each other or separated by an area that does not contain any luminescent material. For example, a fluorescent-emitting layer or a phosphorescent-emitting layer may be laminated between the fluorescent-emitting layer and the phosphorescent-emitting layer. The phosphorescent layer contains the same materials (e.g., host material, assist material) as the phosphorescent layer, and both of the emitting layers A region that does not contain any optical material may be provided. This makes it easier to manufacture the light-emitting element. In addition, the driving voltage is reduced.

[0438] The light-emitting element may be a single element having one EL layer, or a light-emitting element having multiple EL layers. and a charge generating layer interposed therebetween to form a tandem element.

[0439] The conductive film that transmits visible light is, for example, indium oxide, indium tin oxide, indium It can be formed using zinc oxide, zinc oxide, zinc oxide doped with gallium, etc. In addition, gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum Metallic materials such as iron, cobalt, copper, palladium, or titanium, including these metallic materials Alloys or nitrides of these metal materials (e.g., titanium nitride) may also be used to the extent that they have translucency. It can be used by forming it thin. Also, a laminated film of the above materials can be used as a conductive layer. For example, a laminated film of an alloy of silver and magnesium and indium tin oxide can be used. In this case, the electrical conductivity can be increased, which is preferable. Graphene or the like may also be used. .

[0440] The conductive film that reflects visible light is made of, for example, aluminum, gold, platinum, silver, nickel, tungsten, etc. Metallic materials such as stainless steel, chromium, molybdenum, iron, cobalt, copper, or palladium, or In addition, the above-mentioned metal materials and alloys may be used. Tungsten, neodymium, germanium, etc. may be added. Titanium, nickel Alternatively, an alloy containing neodymium and aluminum (aluminum alloy) may be used. Alternatively, an alloy containing copper, palladium, magnesium, and silver may be used. The alloy containing silver and copper is In addition, when the aluminum film or the aluminum alloy film is in contact with the aluminum film, the heat resistance is high. By laminating a metal film or a metal oxide film on the insulating layer, oxidation can be suppressed. Examples of materials for the metal film and metal oxide film include titanium and titanium oxide. The conductive film that transmits visible light and a film made of a metal material may be laminated. For example, a film made of silver and indium may be laminated. laminated film of silver-magnesium alloy and indium-tin-oxide, etc. It can be used.

[0441] The electrodes may be formed by vapor deposition or sputtering. The shape is created using a discharge method such as the ink jet method, a printing method such as the screen printing method, or a plating method. It can be achieved.

[0442] In addition, the above-mentioned light-emitting layer, the substance having a high hole-injecting property, the substance having a high hole-transporting property, the The layer including a substance having a high electron transporting property, a substance having a high electron injecting property, a bipolar substance, or the like is These include inorganic compounds such as quantum dots and polymer compounds (oligomers, dendrimers, and polymers). For example, by using quantum dots in the light-emitting layer, It can also function as such.

[0443] The quantum dot materials include colloidal quantum dot materials, alloy quantum dot materials, Core-shell type quantum dot materials, core type quantum dot materials, etc. can be used. , materials containing elements from groups 12 and 16, 13 and 15, or 14 and 16 Alternatively, cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium, Quantum dot materials containing elements such as lead, gallium, arsenic, and aluminum may also be used.

[0444] [Adhesive layer] The adhesive layer may be a light-curing adhesive such as an ultraviolet-curing adhesive, a reaction-curing adhesive, or a heat-curing adhesive. Various curing adhesives such as viscoelastic adhesives, anaerobic adhesives, etc. can be used. Epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, E VA (ethylene vinyl acetate) resin, etc. In particular, the moisture permeability of epoxy resin, etc. A material with low adhesion is preferable. Two-part mixed resin may also be used. It may be used.

[0445] The resin may contain a desiccant. For example, an oxide of an alkaline earth metal (an acid The material used is one that adsorbs moisture by chemical adsorption, such as calcium chloride or barium oxide. Alternatively, materials such as zeolite and silica gel can absorb water by physical adsorption. If a desiccant is included, impurities such as moisture may enter the element. This is preferable because it can suppress the occurrence of the problem of the noise and improve the reliability of the display panel.

[0446] In addition, by mixing a filler with a high refractive index or a light scattering material into the resin, it is possible to improve the light extraction efficiency. For example, titanium oxide, barium oxide, zeolite, and di Ruthenium, etc. can be used.

[0447] [Connection Layer] The connection layer is made of anisotropic conductive film (ACF). conductive film) and anisotropic conductive paste (ACP) Conductive Paste) can be used.

[0448] [Colored layer] Materials that can be used for the coloring layer include metal materials, resin materials, pigments, and dyes. Examples of such materials include resin materials.

[0449] [Light blocking layer] Materials that can be used for the light-shielding layer include carbon black, titanium black, Examples of the material include a metal, a metal oxide, and a composite oxide including a solid solution of a plurality of metal oxides. The film may be a film containing a resin material, or may be a thin film of an inorganic material such as a metal. In addition, the light-shielding layer may be a laminated film of a film containing the material of the colored layer. A film containing a material for a colored layer that transmits light and a material for a colored layer that transmits light of another color By using the same material for the colored layer and the light-shielding layer, a laminated structure with a film containing This is preferable because it allows the equipment to be standardized and the process to be simplified.

[0450] The above is a description of each component.

[0451] [Example of manufacturing method] Here, an example of a method for manufacturing a display device using a flexible substrate will be described.

[0452] Here, the following elements are included: display elements, circuits, wiring, electrodes, optical members such as colored layers and light-shielding layers, and insulating layers. Each layer including the above will be collectively referred to as an element layer. For example, the element layer includes a display element. In addition to the display element, wiring electrically connected to the display element, transistors used in pixels and circuits, etc. Any of the elements may be included.

[0453] In addition, in this case, at the stage where the display element is completed (the manufacturing process is completed), the element layer is The supporting and flexible member is called a substrate. For example, the substrate may have a thickness of This also includes extremely thin films with a thickness of 10 nm or more and 300 μm or less.

[0454] Representative methods for forming an element layer on a substrate having a flexible insulating surface include There are two methods as follows: One is to form an element layer directly on a substrate. The other is to form an element layer on a support substrate different from the substrate, and then peel the element layer from the support substrate. The method is to transfer the element layer to the substrate by using a semiconductor device. In addition to the above method, an element layer is formed on a non-flexible substrate, and the substrate is thinned by polishing or the like. There is also a method for providing flexibility by

[0455] If the material constituting the substrate is heat resistant to the heat applied in the process of forming the element layer, It is preferable to form the element layer directly on the substrate, since the process is simplified. If the element layer is formed while the plate is fixed to the support substrate, the plate can be easily transported within and between devices. This is preferable because it is easier.

[0456] In addition, when a method of forming an element layer on a supporting substrate and then transferring the element layer to the substrate is used, the element layer is first A release layer and an insulating layer are laminated on a supporting substrate, and an element layer is formed on the insulating layer. The element layer is then transferred to the substrate by peeling the element layer from the support substrate. It is only necessary to select a material that causes peeling at the interface between the peeling layer and the insulating layer or within the peeling layer. In this method, a material having high heat resistance is used for a support substrate and a peeling layer, and thus an element layer is formed. This allows the upper limit of the temperature during the formation of the semiconductor device to be increased, forming a device layer having more reliable devices. This is preferable because it is possible.

[0457] For example, a layer containing a high melting point metal material such as tungsten as a peeling layer and a layer containing the metal material A layer containing an oxide is laminated, and silicon oxide or silicon nitride is used as an insulating layer on the peeling layer. It is preferable to use a stack of a plurality of layers of silicon oxynitride, silicon nitride oxide, or the like. In this specification, an oxynitride is a material having a composition in which the oxygen content is higher than that of nitrogen. Nitrogen oxide refers to a material that contains more nitrogen than oxygen in its composition. Point.

[0458] The element layer and the support substrate can be separated by applying a mechanical force or by etching the separation layer. Examples include etching the surface or allowing a liquid to penetrate the peeled interface. Alternatively, the difference in thermal expansion coefficient between the two layers forming the peeling interface can be utilized to heat or The peeling may be effected by cooling.

[0459] Furthermore, if peeling is possible at the interface between the support substrate and the insulating layer, there is no need to provide a peeling layer.

[0460] For example, glass is used as the support substrate, and an organic resin such as polyimide is used as the insulating layer. At this time, a part of the organic resin is locally heated using a laser beam or the like. Or, the organic resin is physically cut or penetrated with a sharp object to remove it. Alternatively, a starting point may be formed, and peeling may be performed at the interface between the glass and the organic resin.

[0461] Alternatively, a heat generating layer is provided between a support substrate and an insulating layer made of an organic resin, and the heat generating layer is heated. The heat generating layer may be formed by applying a current to the heat generating layer and the insulating layer. Materials that generate heat when current flows through them, materials that generate heat when light is absorbed, and materials that generate heat when a magnetic field is applied. For example, the heat generating layer can be made of various materials such as The material to be used can be selected from the group consisting of semiconductors, metals, and insulators.

[0462] In the above-mentioned method, the insulating layer made of organic resin is used as a substrate after peeling. It is possible.

[0463] The above is a description of the method for manufacturing a flexible display device.

[0464] [Configuration example 3] A specific configuration example of the display device according to one embodiment of the present invention will be described below with reference to the drawings. explain.

[0465] [Cross-sectional configuration example 3-1] FIG. 26 is a schematic cross-sectional view of a display device exemplified below. 6, a region including a circuit 34, a region including a display unit 32, and the like. do.

[0466] The substrate 21 and the substrate 31 are bonded together by an adhesive layer 141. A liquid crystal 112 is sealed in the area surrounded by the substrate 31 and the adhesive layer 141. The outer surface of the plate 31 has a polarizer 130 .

[0467] In FIG. 26, the liquid crystal element 40 is sandwiched between the conductive layer 111 and a part of the conductive layer 113. The liquid crystal layer 112 is supported on the conductive layer 111. An alignment film 133a is provided between the liquid crystal 112 and the conductive layer 113. .

[0468] Between the substrate 21 and the substrate 31, monomers 13 are dispersed in the liquid crystal 112. In addition, a partition wall 11 is provided between the substrate 21 and the substrate 31 .

[0469] Although not shown, a front light may be provided outside the polarizing plate 130. As the front light, it is preferable to use an edge light type front light. A front light equipped with an LED is preferred as it reduces power consumption.

[0470] The substrate 31 includes a colored layer 131, a light-shielding layer 132, an insulating layer 121, and a common layer for the liquid crystal element 40. A conductive layer 113 functioning as an electrode, an alignment film 133b, and the like are provided.

[0471] The substrate 21 includes a conductive layer 111 that functions as a pixel electrode of the liquid crystal element 40, an alignment film 133a, , a transistor 201, a transistor 202, a capacitor 203, a connection portion 204, and a wiring 35 The transistor 201 corresponds to, for example, the above-mentioned transistor 70. do.

[0472] On the substrate 21, insulating layers such as an insulating layer 211, an insulating layer 212, an insulating layer 213, and an insulating layer 214 are formed. A part of the insulating layer 211 serves as a gate insulating layer for each transistor. The insulating layer 212 functions as a dielectric of the capacitance element 203. The layer 213 and the insulating layer 214 are provided to cover the transistors and the capacitor element 203. The insulating layer 214 functions as a planarization layer. In the case where the insulating layer covering the insulating layer includes three layers, that is, insulating layer 212, insulating layer 213, and insulating layer 214, However, the present invention is not limited to this and may have four or more layers, or may have a single layer or two layers. The insulating layer 214, which functions as a planarizing layer, may not be provided if it is not necessary. .

[0473] The transistor 201 and the transistor 202 are each a conductor having a portion that functions as a gate. A conductive layer 221, a conductive layer 222 partly functioning as a source or drain, and a semiconductor layer 231 are Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The mark is attached.

[0474] Here, the conductive layer 222 of the transistor 202 is electrically connected to the conductive layer 111. The conductive layer 222 that is not connected may function as a part of the signal line. The conductive layer 221 that functions as the gate of the transistor 202 may function as part of the scan line. stomach.

[0475] FIG. 26 shows a cross section of two pixels (sub-pixels) as an example of the display unit 32. For example, one subpixel includes a transistor 202, a capacitor element 203, a liquid crystal element 40, and a color layer. For example, the colored layer 131 may be selectively formed to form a sub-pixel that exhibits red, a sub-pixel that exhibits green, and a sub-pixel that exhibits red. By arranging sub-pixels that exhibit red and sub-pixels that exhibit blue, a full color display can be achieved. can.

[0476] FIG. 26 shows an example of the circuit 34 in which a transistor 201 is provided. .

[0477] In FIG. 26, as an example of the transistor 201 and the transistor 202, one gate is However, the semiconductor layer 231 in which the channel is formed is sandwiched between two gates. By adopting such a configuration, the threshold voltage of the transistor can be controlled. In this case, two gates are connected and the same signal is applied to them. Such a transistor may be driven by other transistors. It is possible to increase the field effect mobility and the on-current compared to As a result, a circuit capable of high speed operation can be fabricated. By using transistors with a large on-current, the surface area can be reduced. Even if the number of wirings increases when the display device is made larger or more precise, It is possible to reduce signal delay and suppress display unevenness.

[0478] Note that the transistors in the circuit 34 and the transistors in the display unit 32 have the same structure. The transistors in the circuit 34 may all have the same structure. Alternatively, transistors having different structures may be used in combination. The multiple transistors may all have the same structure, or may have different structures. The above data may be used in combination.

[0479] At least one of the insulating layers 212 and 213 that cover the transistors is resistant to water and hydrogen. It is preferable to use a material in which impurities are not easily diffused, such as the insulating layer 212. In this case, the insulating layer 213 can function as a barrier film. It is possible to effectively suppress the diffusion of impurities into the transistor from the outside. As a result, a highly reliable display device can be realized.

[0480] A conductive layer 111 is provided on the insulating layer 214. The conductive layer 111 is The source of the transistor 202 is connected through an opening formed in the insulating layer 213, the insulating layer 212, etc. The conductive layer 111 is electrically connected to one of the source and drain of the capacitor 203. The electrode is electrically connected to one of the electrodes.

[0481] On the substrate 31 side, an insulating layer 121 is provided to cover the colored layer 131 and the light-shielding layer 132. The insulating layer 121 may function as a planarizing layer. Since the surface of the conductive layer 113 can be made approximately flat, the alignment state of the liquid crystal 112 can be made uniform.

[0482] In addition, in FIG. 26, the partition 11 has an area overlapping the area between two adjacent conductive layers 111. The partition wall 11 overlaps the alignment film 133a, the alignment film 133b, the conductive layer 113, etc. The partition wall 11 is arranged so as not to overlap the conductive layer 221 and the conductive layer 222. are placed.

[0483] Further, a recess 50 is formed in the insulating layer 214. The partition wall 11 is formed in an area overlapping the recess 50. In addition, structures 14a and 14b, which are in contact with the conductive layer 113 and have different heights, The structures 14a and 14b are disposed so as to overlap the recesses 50. The insulating layer 14 is provided so as to be covered by a partition wall 11 .

[0484] In the liquid crystal element 40, the conductive layer 111 has a function of reflecting visible light, and the conductive layer 113 has a function of reflecting visible light. The light incident from the substrate 31 side is polarized by the polarizing plate 130. The light is then transmitted through the conductive layer 113 and the liquid crystal 112, and is reflected by the conductive layer 111. 2 and the conductive layer 113 again to reach the polarizing plate 130. The orientation of the liquid crystal 112 is controlled by applying a voltage between the conductive layers 113, thereby controlling the optical modulation of light. That is, the intensity of the light emitted through the polarizing plate 130 can be controlled. In addition, the colored layer 131 absorbs light outside a specific wavelength range. Thus, the extracted light exhibits, for example, red color.

[0485] Here, a linear polarizing plate may be used as the polarizing plate 130, but a circular polarizing plate may also be used. As a circular polarizer, for example, a linear polarizer and a quarter-wave retardation plate are laminated. This makes it possible to suppress reflection of external light. Depending on the type, the cell gap, orientation, driving voltage, etc. of the liquid crystal element used in the liquid crystal element 40 are adjusted. In this way, a desired contrast can be achieved.

[0486] The conductive layer 113 is a conductive layer provided on the substrate 21 side in a portion close to the end of the substrate 31. 21 and F disposed on the substrate 21 side are electrically connected to each other by the connector 243. A potential or a signal can be supplied to the conductive layer 113 from a PC, an IC, or the like.

[0487] The connector 243 may be, for example, a conductive particle. For this purpose, it is possible to use particles of organic resin or silica coated with a metal material. It is preferable to use nickel or gold as the metal material because it is possible to reduce the contact resistance. Particles coated with layers of two or more metal materials, such as nickel coated with gold, are It is preferable to use a material that is elastically deformable or plastically deformable as the connector 243. In this case, the connectors 243, which are conductive particles, are preferably used as shown in FIG. In this way, the connector 243 and the electric This increases the contact area with the electrically conductive layer, reducing contact resistance and preventing connection failures. The occurrence of such defects can be suppressed.

[0488] The connector 243 is preferably disposed so as to be covered with the adhesive layer 141. For example, The connectors 243 may be dispersed in the adhesive layer 141 before curing.

[0489] A connection portion 204 is provided in an area near the end of the substrate 21. The wiring is electrically connected to the FPC 36 via the interconnect layer 242. 35 and a conductive layer obtained by processing the same conductive film as the conductive layer 111 are laminated. 2 shows an example of the configuration of the connection unit 204.

[0490] The above is the description of the cross-sectional configuration example 3-1.

[0491] [Cross-sectional configuration example 3-2] In the following, a touch panel having a touch sensor will be described as an example of a display device according to one embodiment of the present invention. A configuration example of the above will be described.

[0492] FIG. 27 is a schematic cross-sectional view of a display device exemplified below.

[0493] An insulating layer 161, an insulating layer 162, and an insulating layer 163 are laminated in this order on the surface of the substrate 31 facing the substrate 21. The conductive layer 151 and the conductive layer 152 are provided between the insulating layer 161 and the insulating layer 162. The conductive layer 153 is provided between the insulating layer 162 and the insulating layer 163. On the substrate 21 side of the element 3, a light blocking layer 132, a colored layer 131, etc. are provided.

[0494] The conductive layer 151 and the conductive layer 152 are wirings that constitute a capacitive touch sensor. It functions as such.

[0495] FIG. 27 clearly shows the intersection of conductive layer 151 and conductive layer 152. Conductive layer 153 is Through an opening provided in the insulating layer 162, the two conductive layers 151 sandwiching the conductive layer 152 are electrically connected to each other. are connected to the network.

[0496] The conductive layer 151 and the conductive layer 152 are provided at positions overlapping the light-shielding layer 132 in the display section. In FIG. 27, the conductive layer 151 is arranged so as not to overlap the liquid crystal element 40. In other words, the conductive layer 151 has an opening that overlaps with the liquid crystal element 40. With this configuration, light is incident from the outside and reflected by the liquid crystal element 40. Since the conductive layer 151 is not disposed on the path of the light that is reflected by the conductive layer 151 and then emitted to the outside again, The placement of 151 does not substantially reduce brightness, provides high visibility, and consumes little power. It is to be noted that the conductive layers 152 and 153 have the same structure. It is possible.

[0497] In addition, since the conductive layer 151, the conductive layer 152, and the conductive layer 153 do not overlap with the liquid crystal element 40, For these, a metal material with a relatively low resistance can be used. The sensitivity of the touch sensor can be improved as compared to the case where a conductive material is used.

[0498] 27, the conductive layer 151 and the conductive layer 152 (and the conductive layer 153) are not included in the substrate 31. In this example, a light-shielding layer 135 is provided on the side of the light-shielding layer 135. Therefore, even if a metal material is used for the conductive layer 151, etc., the reflection of external light can be suppressed. Therefore, a touch panel with higher visibility can be realized. Although an example in which two light-shielding layers, i.e., layer 135, are provided has been shown, it is also possible to provide only one of them. Good too.

[0499] In addition, the polarizing plate 130 on the substrate 31 is not provided, and the substrate 31 is placed under the test object such as a finger or a stylus. The substrate 31 may be used as a substrate that comes into direct contact with a sensor. The protective layer is preferably a silicon oxide or aluminum oxide. It uses inorganic insulating materials such as yttrium oxide and yttria-stabilized zirconia (YSZ). The substrate 31 may be made of tempered glass. The surface is subjected to physical or chemical treatment such as air cooling and tempering, and compressive stress is applied to the surface. The touch sensor can be attached to one side of the tempered glass, and the other side By providing this surface on the outermost surface of an electronic device and using it as a touch surface, the thickness of the entire device can be reduced. The size can be reduced.

[0500] As shown in FIG. 27, a liquid crystal element 40, a plurality of transistors, and a touch sensor are included. By disposing a conductive layer between the substrate 21 and the substrate 31, the number of parts is reduced. This type of structure is called an in-cell type touch panel. This can be done.

[0501] The configuration of the display device functioning as a touch panel is not limited to this. The substrate on which the conductive layer constituting the sensor is provided is overlaid on the display device shown in FIG. A touch panel may also be configured.

[0502] The above is the description of Cross-sectional Configuration Example 3-2.

[0503] [Cross-sectional configuration example 3-3] FIG. 28 shows a conductive layer 151, a conductive layer 152, etc., constituting the touch sensor, on the substrate 31. This is an example of a touch panel with a junction box formed on the opposite side of the junction box. It can be called Nell.

[0504] On the substrate 31, a conductive layer 151, a conductive layer 152, etc. are formed, and an insulating layer 1 is formed to cover them. A conductive layer 153 is provided over the insulating layer 163.

[0505] The substrate 170 functions as a touch surface, and is used, for example, when a display device is incorporated into an electronic device. When the substrate 170 is inserted into the housing, the substrate 170 functions as a protective glass. are attached together by an adhesive layer 165.

[0506] In FIG. 28, the conductive layer 151 is not only overlapped with the light shielding layer 132 but also overlaps with the liquid crystal element 40, and is also disposed in an area overlapping with the colored layer 131. The layer 151 can be made of a material that transmits visible light. For example, a film containing a metal oxide can be used. or a film containing graphene, or a film containing a metal or alloy that is thin enough to transmit visible light. The same can be used for the conductive layer 152. The conductive layer 153 may also be made of a material that transmits visible light. When the conductive layer 153 is placed over the layer 132 or when the area of ​​the conductive layer 153 is very small, the metal Alternatively, a material that blocks visible light, such as a glass or an alloy, may be used.

[0507] The above is the description of Cross-sectional Configuration Example 3-3.

[0508] [Configuration example 4] In the following, a transmissive model having both a reflective liquid crystal element and a light emitting element as exemplified in Configuration Example 2 will be described. A more specific cross-sectional configuration example of a display device capable of displaying in both the reflective and reflective modes. This article explains:

[0509] [Cross-sectional configuration example 4-1] FIG. 29 is a schematic cross-sectional view of a display device exemplified below. The display device shown in FIG. This corresponds to the display device illustrated in FIG. 7(A).

[0510] The display device has an insulating layer 220 between the substrate 21 and the substrate 31. Between the layer 220, the light emitting element 60, the transistor 205, the transistor 206, the color layer 13 Between the insulating layer 220 and the substrate 31, the liquid crystal element 40, the colored layer 131, the partition wall 4, etc. 11, the structure 14, etc. Also, the substrate 31 and the insulating layer 220 are bonded via an adhesive layer 141. The substrate 21 and the insulating layer 220 are bonded to each other via an adhesive layer 142. 0 has a recess 50.

[0511] The liquid crystal element 40 is a reflective liquid crystal element. The liquid crystal element 40 includes a conductive layer 111a, a liquid crystal 111b, and a conductive layer 111c. 2, a conductive layer 113 is laminated. The conductive layer 111b that reflects visible light is provided on the insulating layer 251. The conductive layer 111a and the conductive layer 113 contain a material that transmits visible light.

[0512] The light emitting element 60 is a bottom emission type light emitting element. A laminated structure in which a conductive layer 191, an EL layer 192, and a conductive layer 193b are laminated in this order from the side of the substrate 20. In addition, a conductive layer 193a is provided to cover the conductive layer 193b. b includes a material that reflects visible light, and the conductive layer 191 and the conductive layer 193a transmit visible light. The light emitted by the light emitting element 60 is guided through the colored layer 134, the insulating layer 220, the opening 251, the conductive layer 222, and the insulating layer 220. The light is emitted to the substrate 31 side through the conductive layer 113 and the like.

[0513] Moreover, an insulating layer 217 is provided on the insulating layer 216 that covers the end portion of the conductive layer 191 . The insulating layer 217 acts as a spacer to prevent the insulating layer 220 and the substrate 21 from coming closer than necessary. The EL layer 192 and the conductive layer 193a function as a shielding mask (metal mask ), the function of preventing the shielding mask from coming into contact with the surface on which the shielding mask is to be formed. Note that the insulating layer 217 does not have to be provided if it is not necessary.

[0514] One of the source and drain of the transistor 205 is connected to the light-emitting element 6 through the conductive layer 224. 0 is electrically connected to the conductive layer 191.

[0515] One of the source and drain of the transistor 206 is connected to the conductive layer 11 via a connection portion 207. The conductive layer 111b and the conductive layer 111a are provided in contact with each other, and this Here, the connection portion 207 is an opening provided in the insulating layer 220. This is a portion that connects the conductive layers provided on both sides of the insulating layer 220 together via the holes.

[0516] A connection portion 204 is provided in the area where the substrate 21 and the substrate 31 do not overlap. The upper surface of the connection portion 204 is a conductive layer 111a. The conductive layer obtained by processing the same conductive film as that in the first embodiment is exposed. The FPC 36 can be electrically connected via the connection layer 242 .

[0517] A connection portion 252 is provided in a portion of the area where the adhesive layer 141 is provided. In 52, a conductive layer obtained by processing the same conductive film as the conductive layer 111a and the conductive layer 11 3 is electrically connected to the substrate 31 by a connector 243. A signal or a signal input from the FPC 36 connected to the substrate 21 side is input to the conductive layer 113 formed on the substrate 21 side. An electrical potential can be applied via connection 252 .

[0518] The above is the description of the cross-sectional configuration example 4-1.

[0519] [Cross-sectional configuration example 4-2] FIG. 30 is a schematic cross-sectional view of a display device exemplified below. The display device shown in FIG. This corresponds to the display device illustrated in FIG. 8(A).

[0520] The display device has an insulating layer 220 between the substrate 21 and the substrate 31. The light-emitting element 60 is disposed between the insulating layer 220 and the substrate 31. 40, transistor 205, transistor 206, colored layer 134, colored layer 131, light-shielding layer 132, partition wall 11, etc.

[0521] In FIG. 30, the liquid crystal element 40 is electrically connected to the transistor 206 through the conductive layer 224. The conductive layer 111b is connected to the conductive layer 111a, and the conductive layer 111b is covered by the conductive layer 111a. It shows.

[0522] In this example, the partition wall 11 is disposed so as to overlap the light emitting element 60. The wall 11 is arranged so as to overlap the colored layer 134, the colored layer 131, the conductive layer 191, etc. The light emitted by the element 60 passes through the colored layer 134, the insulating layer 220, the opening 251, the partition wall 11, the conductive layer 1 13 and is emitted to the substrate 31 side.

[0523] The above is the description of Cross-sectional Configuration Example 4-2.

[0524] [Cross-sectional configuration example 4-3] FIG. 31 shows a schematic cross-sectional view of a display device exemplified below. The display device shown in FIG. This corresponds to the display device illustrated in FIG. 3(A).

[0525] Moreover, the display device shown in FIG. 31 has the following advantages over the configuration shown in FIG. 29: The display device has a transistor 201a instead of the transistor 201, The display device also has an FPC 36 and a connection layer 242 instead of an FPC 36. The display device also includes a C36a, an FPC36b, a connection layer 242a, and a connection layer 242b. , and an adhesive layer 143. In addition, the display device includes wiring 35a and wiring 35 instead of wiring 35. b. The display device also includes an insulating layer 261, an insulating layer 262, an insulating layer 263, and an insulating layer 26 4, has an insulating layer 265.

[0526] The transistor 201a is a transistor that drives a pixel circuit including the transistor 206. The transistor 201b drives a pixel circuit including the transistor 205. It is a transistor.

[0527] The FPC 36a is electrically connected to the wiring 35a via the connection layer 242a. The FPC 36b is electrically connected to the wiring 35b via a connection layer 242b.

[0528] The adhesive layer 143 bonds the insulating layer 214 and the insulating layer 261. On the surface opposite to the adhesive layer 143, an insulating layer 262, an insulating layer 263, an insulating layer 264, and an insulating layer A part of the insulating layer 262 is a layer including the transistor 201b and the transistor 201c. The insulating layer 263 functions as a gate insulating layer for the transistor 205. 65 is provided covering the transistor 201b and the transistor 205.

[0529] The above is the description of the cross-sectional configuration example 4-3.

[0530] [About transistors] An example of the structure of a transistor applicable to the above display device will be described below.

[0531] The transistor 310 illustrated in FIG. 32A is an example of a transistor having a bottom gate structure. It is.

[0532] The transistor 310 includes a conductive layer 311 functioning as a gate electrode and a gate insulating layer A part of the insulating layer 332 that functions as a gate insulating layer, the semiconductor layer 312, and the source electrode or the drain electrode A conductive layer 313a serving as one of the source and drain electrodes and a conductive layer 313b serving as the other of the source and drain electrodes and a conductive layer 313b.

[0533] In FIG. 32A, a transistor 310 is provided over an insulating layer 331. An insulating layer 334 is provided to cover the transistor 310, and a conductive layer 321 is provided on the insulating layer 334. The conductive layer 321 is electrically connected to the conductive layer 313b through an opening provided in the insulating layer 334. The conductive layer 321 is electrically connected to the electrode 322 and functions as a pixel electrode. 3 shows an example having an insulating layer 335 covering the

[0534] In the transistor 310, a conductive layer 311 functioning as a gate electrode is formed on a semiconductor layer 312. The insulating layer 332 is located closer to the surface to be formed (the insulating layer 331 side). The semiconductor layer 312 is provided to cover the conductive layer 311. The region of the conductor layer 312 that overlaps with the conductive layer 311 corresponds to a channel formation region. The layer 313a and the conductive layer 313b are provided in contact with the upper surface and side edges of the semiconductor layer 312, respectively. It is being done.

[0535] Note that in the transistor 310, the width of the semiconductor layer 312 is larger than that of the conductive layer 311. In this example, the conductive layer 311 and the conductive layer 313a or the conductive layer 3 Since the semiconductor layer 312 is disposed between the conductive layer 311 and the conductive layer 313a or the conductive layer 313b, This can reduce the parasitic capacitance between the conductive layer 313b and the insulating layer 313c.

[0536] The transistor 310 is a channel etch type transistor. Since it is relatively easy to reduce the area, it can be suitably used in high-definition display devices. Cut.

[0537] The transistor 310a shown in FIG. 32B has a higher conductivity than the transistor 310. The difference is that the conductive layer 314 is formed on the insulating layer 333 and the insulating layer 336. The insulating layer 336 is provided in a region overlapping with the semiconductor layer 312. and is provided covering the insulating layer 333 .

[0538] The conductive layer 314 is located on the opposite side of the semiconductor layer 312 from the conductive layer 311. When the conductive layer 311 is used as a first gate electrode, the conductive layer 314 functions as a second gate electrode. By applying the same potential to the conductive layer 311 and the conductive layer 314, In addition, the on-state current of the conductive layer 311 and the conductive layer 314 can be increased. By applying a potential to one side to control the threshold voltage and a potential to the other side for driving, , the threshold voltage of transistor 310a can be controlled.

[0539] Here, it is preferable to use a conductive material containing an oxide as the conductive layer 314. Thus, the conductive film constituting the conductive layer 314 is formed in an atmosphere containing oxygen. In this way, oxygen can be supplied to the insulating layer 333. The ratio of the oxygen supplied to the insulating layer 333 is preferably in the range of 90% to 100%. The oxygen is supplied to the semiconductor layer 312 by a subsequent heat treatment, and the oxygen vacancies in the semiconductor layer 312 are reduced. It is possible to achieve this.

[0540] In particular, it is preferable to use an oxide semiconductor with low resistance for the conductive layer 314. It is preferable to use an insulating film that releases hydrogen, such as a silicon nitride film, for the insulating layer 336. During the formation of the insulating layer 336 or by a subsequent heat treatment, hydrogen is provided in the conductive layer 314. Thus, the electrical resistance of the conductive layer 314 can be effectively reduced.

[0541] The transistor 310b shown in FIG. 32C is a transistor having a top gate structure. .

[0542] In the transistor 310b, a conductive layer 311 functioning as a gate electrode is disposed between a semiconductor layer 312 and a gate electrode 313. The insulating layer 331 is provided on the upper side (opposite the surface on which the semiconductor layer is to be formed). A layer 312 is formed on the semiconductor layer 312. An insulating layer 332 and a conductive layer 311 are formed on the semiconductor layer 312. The insulating layer 333 is formed by laminating the upper surface and side edges of the semiconductor layer 312, The conductive layer 313a and the conductive layer 311 are provided so as to cover the side surfaces of the insulating layer 333 and the conductive layer 311. The conductive layer 313b is provided on the insulating layer 333. is electrically connected to the upper surface of the semiconductor layer 312 through an opening provided in the insulating layer 333. is.

[0543] In this example, the insulating layer 332 does not overlap with the conductive layer 311. 3, an insulating layer 332 is provided over the top and side edges of the semiconductor layer 312. This is also fine.

[0544] The transistor 310b is a structure including a conductive layer 311 and a conductive layer 313a or a conductive layer 313b. Since it is easy to keep them at a reasonable distance, it is possible to reduce the parasitic capacitance between them. .

[0545] The transistor 310c shown in FIG. 32D is conductive in comparison with the transistor 310b. The difference is that the conductive layer 315 is connected to the insulating layer 331 and the insulating layer 337. The insulating layer 337 is provided over the conductive layer 311 and has a region overlapping with the semiconductor layer 312. 5 and insulating layer 331.

[0546] The conductive layer 315 functions as a second gate electrode in the same manner as the conductive layer 314. Therefore, it is possible to increase the on-current and control the threshold voltage.

[0547] FIG. 32(E) shows a configuration in which a transistor 310 and a transistor 310d are stacked. The transistor 310d is a transistor having a pair of gate electrodes.

[0548] The transistor 310d includes a part of the conductive layer 313b serving as a first gate electrode, A part of the insulating layer 333 functioning as a first gate insulating layer, the semiconductor layer 312a, and the source A conductive layer 313c serving as one of a source electrode and a drain electrode, A conductive layer 313d serving as the other electrode and an insulating layer 313b serving as a second gate insulating layer 336 and a conductive layer 314a functioning as a second gate electrode.

[0549] Such a configuration is particularly suitable for use in a circuit electrically connected to a light emitting element. That is, the transistor 310 can be used as a transistor that controls the selected and unselected states of the pixel. (also called switching transistor or selection transistor) The transistor 310d is a transistor (also called a driving transistor) that controls the current flowing to the light emitting element 60. It is preferable to use it for the above purpose.

[0550] In the structure shown in FIG. 32(E), the conductive layer 314a is formed through an opening in the insulating layer 336. The conductive layer 321 is electrically connected to the insulating layer 334. Through the opening, the conductive layer 314a is electrically connected. The capacitance component (also called gate capacitance) between the semiconductor layer 314a and the semiconductor layer 312a is called the retention capacitance of the pixel. It can be used as.

[0551] This concludes the description of the transistor.

[0552] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0553] (Embodiment 2) In this embodiment, a more specific example of a display device according to one embodiment of the present invention will be described. The display device exemplified below has both a reflective liquid crystal element and a light emitting element, and can be used in both a transmissive mode and a reflective mode. This is a display device that can display both in shooting and projection modes.

[0554] [Configuration example] FIG. 33A is a block diagram showing an example of the configuration of the display device 400. The display device 362 includes a plurality of pixels 410 arranged in a matrix. 400 includes a circuit GD and a circuit SD. Also, a plurality of pixels 410 arranged in a direction R, A plurality of wirings G1, a plurality of wirings G2, a plurality of wirings ANO, and Also, the pixel 410 arranged in the direction C and the circuit S D and a plurality of wirings S1 and S2 electrically connected thereto.

[0555] For simplicity, a configuration having one circuit GD and one circuit SD is shown here. A circuit GD and a circuit SD for driving the crystal element, and a circuit GD and a circuit SD for driving the light emitting element. may be provided separately.

[0556] The pixel 410 has a reflective liquid crystal element and a light emitting element. The substrate and the light emitting element have an overlapping portion.

[0557] FIG. 33B1 shows a configuration example of the conductive layer 311b included in the pixel 410. The conductive layer 311b functions as a reflective electrode of the liquid crystal element in the pixel 410. , an opening 451 is provided.

[0558] In FIG. 33(B1), the light emitting element 360 located in the area overlapping with the conductive layer 311b is indicated by a dashed line. The light-emitting element 360 is disposed so as to overlap the opening 451 of the conductive layer 311b. As a result, the light emitted by the light emitting element 360 is emitted to the display surface side through the opening 451. can be.

[0559] In FIG. 33(B1), pixels 410 adjacent in the direction R correspond to different colors. At this time, as shown in FIG. 33(B1), in two pixels adjacent to each other in the direction R, the openings 4 51 are provided at different positions on the conductive layer 311b so as not to be arranged in a line. This is preferable. It is possible to separate the two light emitting elements 360, and the light emitting elements 360 emit light. This phenomenon occurs when light coming from the same pixel is incident on the colored layer of an adjacent pixel 410 (also known as crosstalk). In addition, by arranging two adjacent light emitting elements 360 apart from each other, Therefore, in the case where the EL layer of the light emitting element 360 is separately produced by using a shadow mask or the like, Even so, a high-definition display device can be realized.

[0560] Alternatively, an arrangement as shown in FIG. 33(B2) may be used.

[0561] If the ratio of the total area of ​​the openings 451 to the total area of ​​the non-openings is too large, The display becomes dark. Also, the ratio of the total area of ​​the openings 451 to the total area of ​​the non-openings If the value is too small, the display using the light emitting element 360 will be too dark.

[0562] In addition, the area of ​​the opening 451 provided in the conductive layer 311b functioning as a reflective electrode is too small. As a result, the efficiency of light that can be extracted from the light emitted by the light emitting element 360 decreases.

[0563] The shape of the opening 451 may be, for example, a polygon, a rectangle, an ellipse, a circle, a cross, or the like. The shape may also be thin stripes, slits, or a checkered pattern. The apertures 451 may be arranged close to adjacent pixels. The pixels are arranged close to the other pixels to be displayed, which helps to suppress crosstalk.

[0564] [Circuit configuration example] 34 is a circuit diagram showing a configuration example of a pixel 410. In FIG. It shows 410.

[0565] The pixel 410 includes a switch SW1, a capacitance element C1, a liquid crystal element 340, a switch SW2, and a transistor. The pixel 410 includes a transistor M, a capacitance element C2, and a light-emitting element 360. Wire G1, wire G2, wire ANO, wire CSCOM, wire S1, and wire S2 are electrically In addition, in FIG. 34, a wiring VCOM1 electrically connected to the liquid crystal element 340 , and a wiring VCOM2 electrically connected to the light-emitting element 360 are shown.

[0566] FIG. 34 shows an example in which transistors are used for the switches SW1 and SW2. It shows.

[0567] The switch SW1 has a gate connected to the line G1 and a source or drain connected to the line S 1, and the other of the source and drain is connected to one electrode of the capacitance element C1 and the liquid crystal element 3 The other electrode of the capacitance element C1 is connected to the wiring CSCOM. The other electrode of the liquid crystal element 340 is connected to the wiring VCOM1.

[0568] The switch SW2 has a gate connected to the wiring G2 and a source or drain The other of the source and drain is connected to one electrode of the capacitance element C2, The other electrode of the capacitance element C2 is connected to the source of the transistor M. The transistor M is connected to one of the source and drain, and the wiring ANO. The other of the drains is connected to one electrode of the light emitting element 360. The other electrode is connected to the wiring VCOM2.

[0569] In FIG. 34, a transistor M has two gates that sandwich a semiconductor. These are connected to form This increases the current that the transistor M can pass. It is possible.

[0570] A signal for controlling the switch SW1 to a conductive state or a non-conductive state is applied to the wiring G1. A predetermined potential can be applied to the wiring VCOM1. A signal for controlling the alignment state of the liquid crystal of the liquid crystal element 340 can be applied. The OM can be given a predetermined electrical potential.

[0571] A signal for controlling the switch SW2 to a conductive state or a non-conductive state is applied to the wiring G2. A potential difference that causes the light emitting element 360 to emit light is generated between the wiring VCOM2 and the wiring ANO. A potential that controls the conduction state of the transistor M can be applied to the wiring S2. A signal can be provided to control the

[0572] In the pixel 410 shown in FIG. 34, when performing a display in a reflective mode, for example, the wiring G1 and the wiring The liquid crystal element 340 is driven by a signal applied to the line S1, and optical modulation is used to display the image. In addition, when displaying in a transmissive mode, the signal applied to the wiring G2 and the wiring S2 is The light emitting element 360 can be driven by a signal to emit light for display. When driving the wiring G1, the wiring G2, the wiring S1, and the wiring S2, It can be driven by a signal.

[0573] In FIG. 34, one pixel 410 includes one liquid crystal element 340 and one light emitting element 360. FIG. 35A shows an example in which one pixel 410 has one The liquid crystal element 340 and the four light-emitting elements 360 (light-emitting elements 360r, 360g, 360b, 35(A) shows an example having a pixel 410 having a pixel pitch of 60w. A single pixel is capable of displaying full color.

[0574] In FIG. 35A, in addition to the example of FIG. 34, a line G3 and a line S3 are connected to a pixel 410. is.

[0575] In the example shown in FIG. 35(A), for example, four light emitting elements 360 are arranged as red (R), green (G), Light-emitting elements that emit green (G), blue (B), and white (W) colors can be used. A reflective liquid crystal element that exhibits white color can be used as the liquid crystal element 340. In the case of display in reflective mode, white color with high reflectance can be displayed. When display is performed in the transmissive mode, display with high color rendering can be achieved with low power consumption.

[0576] 35(B) shows a configuration example of a pixel 410. The pixel 410 has a conductive layer 3 The light emitting element 360w overlaps with the opening of the conductive layer 311, and the light emitting element 360w is disposed around the conductive layer 311. The light emitting element 360r includes a light emitting element 360g, and a light emitting element 360b. It is preferable that the light emitting element 360g and the light emitting element 360b have substantially the same light emitting area. stomach.

[0577] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0578] (Embodiment 3) In this embodiment, a display module that can be manufactured using one embodiment of the present invention will be described. I will explain it below.

[0579] The display module 6000 shown in FIG. 36 includes an upper cover 6001 and a lower cover 6002. Between them, the touch panel 6004 connected to the FPC 6003 and the A display panel 6006, a frame 6009, a printed circuit board 6010, and a battery 601 1.

[0580] A display device manufactured according to one embodiment of the present invention is used for a display panel 6006, for example. It is possible.

[0581] The upper cover 6001 and the lower cover 6002 are connected to the touch panel 6004 and the display panel The shape and dimensions can be changed as appropriate to match the size of 6006.

[0582] The touch panel 6004 is a resistive or capacitive touch panel. It can be used by overlapping it with the panel 6006. It is also possible to provide the display panel 6006 with a touch panel function.

[0583] The frame 6009 protects the display panel 6006 and also prevents the movement of the printed circuit board 6010. It also functions as an electromagnetic shield to block electromagnetic waves generated by the operation of the frame. The frame 6009 may also function as a heat sink.

[0584] The printed circuit board 6010 includes a power supply circuit, a signal circuit for outputting a video signal, and a clock signal. The power supply circuit is provided with a signal processing circuit. Alternatively, the power source may be a battery 6011 provided separately. , this can be omitted when using a commercial power source.

[0585] In addition, the display module 6000 includes components such as a polarizing plate, a retardation plate, and a prism sheet. It may be added.

[0586] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0587] (Embodiment 4) In this embodiment, an electronic device and a lighting device according to one embodiment of the present invention will be described with reference to drawings. Reveal.

[0588] Using the display device of one embodiment of the present invention, an electronic device or a lighting device can be manufactured. By using such a display device, electronic devices and lighting devices having curved surfaces and high reliability can be manufactured. In addition, the display device of one embodiment of the present invention can be used to provide flexible and highly reliable electronic devices and lighting devices. You can create a device.

[0589] Examples of electronic devices include television sets, desktop or notebook computers, etc. Personal computers, computer monitors, digital cameras, digital videos Cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, audio players Examples include live video games, pachinko machines, and other large game machines.

[0590] The electronic device or lighting device according to one embodiment of the present invention can be used for interior or exterior walls of a house or building, Or, it can be incorporated along curved surfaces in the interior or exterior of a vehicle.

[0591] The electronic device of one embodiment of the present invention may include a secondary battery and may be powered by non-contact power transmission. It is preferable that the secondary battery can be charged.

[0592] As the secondary battery, for example, a lithium polymer battery (lithium ion battery) using a gel electrolyte is used. Lithium-ion secondary batteries such as lithium-ion polymer batteries, nickel-metal hydride batteries, nickel-cadmium batteries, organic Examples include radical batteries, lead-acid batteries, secondary air batteries, nickel-zinc batteries, and silver-zinc batteries. do.

[0593] The electronic device according to one embodiment of the present invention may include an antenna. By doing so, it is possible to display images and information on the display unit. And if a secondary battery is included, the antenna may be used for contactless power transmission.

[0594] The electronic device according to one embodiment of the present invention includes a sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation Numbers, distance, light, liquids, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor or infrared rays) It may have.

[0595] The electronic device according to one embodiment of the present invention can have various functions. Functions for displaying still images, videos, text images, etc. on the display, touch panel function, calendar Functions such as displaying date or time, running various software (programs) a function to read out a program or data recorded on a recording medium; It can have functions etc.

[0596] Furthermore, in an electronic device having a plurality of display units, one of the display units is used mainly for displaying image information. and another display unit that mainly displays text information, or multiple displays It can have a function for displaying a stereoscopic image by displaying an image taking into account parallax. Furthermore, in electronic devices having an image receiving unit, the function of taking still or moving images, The function of automatically or manually correcting the captured image, and the function of storing the captured image on a recording medium (external or electronic) It can have functions such as storing the captured image on a computer (built into the device) and displaying the captured image on the display unit. Note that the functions of the electronic device of one embodiment of the present invention are not limited to those described above, and various functions can be used. may have the following structure:

[0597] 37(A) to (E) show an example of an electronic device having a curved display unit 7000. The display unit 7000 has a curved display surface, and displays information along the curved display surface. The display unit 7000 may be flexible.

[0598] The display unit 7000 is manufactured using the display device or the like according to one embodiment of the present invention. This makes it possible to provide an electronic device that has a curved display portion and is highly reliable.

[0599] An example of a mobile phone is shown in Fig. 37(A) and (B). The mobile phone 7110 shown in FIG. 37B includes a housing 7101 and a display unit 7102. 000, operation button 7103, external connection port 7104, speaker 7105, microphone 71 06, etc. The mobile phone 7110 shown in FIG. 37(B) further includes a camera 7107. Yes.

[0600] Each mobile phone has a touch sensor on the display unit 7000. All operations, such as inputting text, can be performed by touching the display 7000 with a finger or a stylus. It can be done.

[0601] In addition, the operation button 7103 can be used to turn the power on and off, and to display the display unit 7000. For example, from the email composition screen, you can change the type of image displayed on the You can then switch to the main menu screen.

[0602] In addition, a detection device such as a gyro sensor or an acceleration sensor may be provided inside the mobile phone. The orientation of the mobile phone (portrait or landscape) is then determined and the orientation of the screen display of the display unit 7000 is automatically adjusted. The screen orientation can be dynamically changed. By touching 7000, operating the operation button 7103, or using the microphone 7106 This can also be done by inputting, etc.

[0603] An example of a portable information terminal is shown in Fig. 37(C) and (D). The portable information terminal 7200 and the portable information terminal 7210 shown in FIG. 37(D) each include a housing 7201 and It has a display unit 7000. In addition, it has operation buttons, an external connection port, a speaker, a microphone, The display unit 7000 may have an antenna, a camera, a battery, etc. The mobile information terminal is operated by touching the display unit 7000 with a finger or a stylus. This can be done.

[0604] The portable information terminal exemplified in this embodiment is, for example, a telephone, a notebook, an information viewing device, etc. Specifically, as a smartphone, The portable information terminal exemplified in this embodiment can be, for example, a mobile phone, E-mail, viewing and writing text, playing music, internet communication, computer games, etc. The various applications can be executed.

[0605] The portable information terminal 7200 and the portable information terminal 7210 are configured to display text and image information on a plurality of devices. For example, as shown in Figure 37(C) and (D), three operation buttons can be displayed on the screen. A button 7202 can be displayed on one side, and rectangular information 7203 can be displayed on the other side. FIG. 37(C) shows an example in which information is displayed on the top surface of a mobile information terminal, and FIG. Here is an example of a mobile information terminal with information displayed on the side. The information may be displayed on the

[0606] An example of such information is notifications from social networking services (SNS). , display notifying you of incoming e-mails or telephone calls, subject of e-mails or sender name , date and time, time, battery level, antenna reception strength, etc. Or, the information is displayed Instead of information, operation buttons, icons, etc. may be displayed at the position where the information is displayed.

[0607] For example, the user of the portable information terminal 7200 may carry the portable information terminal 7200 in a breast pocket of a garment. When the item is stored, the display (information 7203 in this example) can be confirmed.

[0608] Specifically, the telephone number or name of the caller of the incoming call is input to the mobile information terminal 7200. The user takes the mobile information terminal 7200 out of his / her pocket and You can check the display and decide whether or not to answer the call without taking it out.

[0609] FIG. 37E shows an example of a television device. The television device 7300 has a housing 7 A display unit 7000 is built into the housing 301. This shows a configuration that supports 301.

[0610] The television device 7300 shown in FIG. 37E is operated by an operation switch provided in the housing 7301. This can be done by a separate remote control 7311 or the display unit 70. The display unit 7000 may be provided with a touch sensor, and the operation can be performed by touching the display unit 7000 with a finger or the like. The remote control unit 7311 may display information to be output from the remote control unit 7311. The remote control 7311 may have a display unit that displays the operation keys or touch panel. The channel and volume can be controlled by the touch panel, and the display 7000 displays You can control the image that is displayed.

[0611] The television device 7300 includes a receiver and a modem. The receiver can receive general television broadcasts. It can also receive TV broadcasts by wire or by modem. By connecting to a wireless communication network, one-way (sender to receiver) or It is also possible to communicate information in both directions (between sender and receiver, or between receivers). be.

[0612] FIG. 37(F) shows an example of a lighting device having a curved light-emitting portion.

[0613] The light-emitting portion of the lighting device shown in FIG. 37F is formed using the display device or the like according to one embodiment of the present invention. According to one aspect of the present invention, a lighting device having a curved light-emitting portion and high reliability is manufactured. can be provided.

[0614] The light-emitting unit 7411 of the lighting device 7400 shown in FIG. Therefore, the light emitting parts are arranged symmetrically around the lighting device 7400. It can illuminate in all directions.

[0615] Furthermore, the light-emitting unit of the lighting device 7400 may be flexible. The light emitting surface of the light emitting part can be freely adjusted according to the purpose. The structure may be bendable.

[0616] The lighting device 7400 includes a base 7401 having an operation switch 7403 and a It has a light emitting portion that is supported.

[0617] In this embodiment, the illumination device in which the light-emitting unit is supported by the base is illustrated. The housing having the above may be fixed to a ceiling or hung from the ceiling. The light-emitting surface can be curved, so a specific area can be illuminated by curving the light-emitting surface in a concave shape. It can be used to illuminate a small area, or the light-emitting surface can be curved convexly to illuminate an entire room.

[0618] 38(A) to (I) show a display device having a flexible and bendable display unit 7001. 1 shows an example of a portable information terminal.

[0619] The display portion 7001 is manufactured using a display device or the like according to one embodiment of the present invention. The display device can be bent to a diameter of 0.01 mm or more and 150 mm or less. The display unit 7001 may be provided with a touch sensor, and when the display unit 7001 is touched with a finger or the like, According to one aspect of the present invention, a flexible display device can be used to operate a mobile information terminal. It is possible to provide an electronic device having a highly reliable electronic device.

[0620] 38(A) and (B) are perspective views showing an example of a portable information terminal. 00 includes a housing 7501, a display unit 7001, a drawer member 7502, an operation button 7503, etc. has.

[0621] The portable information terminal 7500 has a flexible display unit wound in a roll shape in a housing 7501. The display unit 7001 can be pulled out using a pull-out member 7502. do.

[0622] In addition, the portable information terminal 7500 can receive video signals using a built-in control unit. The image can be displayed on the display unit 7001. The battery is built in. Also, the housing 7501 is equipped with a terminal for connecting a connector, The image signal and power may be directly supplied from the outside via wires.

[0623] In addition, the operation button 7503 can be used to turn the power on and off and to switch the displayed image. In addition, in FIG. 38(A) and (B), the mobile information terminal 7500 In the example shown, the operation buttons 7503 are arranged on the front surface of the mobile information terminal 7500. It may be placed on the same surface (front surface) as the display surface or on the back surface.

[0624] FIG. 38B shows a portable information terminal 7500 with the display portion 7001 pulled out. In this state, an image can be displayed on the display unit 7001. FIG. 38(A) shows a state in which the display unit 7001 is wound in a roll, and FIG. 38(B) shows a state in which the display unit 7001 is pulled out. The portable information terminal 7500 may display differently depending on the state. For example, as shown in FIG. In the state of (A), the rolled-up portion of the display unit 7001 is hidden. This allows the power consumption of the portable information terminal 7500 to be reduced.

[0625] When the display unit 7001 is pulled out, the display surface of the display unit 7001 is made flat. To fix the display unit 7001 in place, a reinforcing frame may be provided on the side of the display unit 7001 .

[0626] In addition to this configuration, a speaker is provided on the housing, and the audio signal received together with the video signal is output. The configuration may be such that sound is outputted.

[0627] An example of a foldable portable information terminal is shown in Figures 38(C) to (E). In the unfolded state, Fig. 38(D) shows the unfolded or folded state. In FIG. 38(E), the portable information terminal 76 is in a folded state. The portable information terminal 7600 is highly portable when folded and can be folded up to 100 mm in length when unfolded. In this mode, the seamless, large display area provides excellent visibility.

[0628] The display unit 7001 is supported by three housings 7601 connected by hinges 7602. By bending the two housings 7601 via the hinge 7602, The terminal 7600 can be reversibly transformed from an unfolded state to a folded state.

[0629] An example of a foldable portable information terminal is shown in Figures 38(F) and (G). In FIG. 38(G), the display unit 7001 is folded inward. The mobile information terminal 7650 is folded so that the 7001 faces outward. The terminal 7650 has a display portion 7001 and a non-display portion 7651. When not in use, the display unit 7001 can be folded inward. This can prevent the surface from getting dirty or scratched.

[0630] FIG. 38(H) shows an example of a flexible portable information terminal. The portable information terminal 7700 is The device has a housing 7701 and a display unit 7001. , 7703b, speakers 7704a, 7704b as audio output means, and an external connection port 7 The portable information terminal 7700 may have a display 705, a microphone 7706, and the like. The battery 7709 may be mounted on the display unit 7 It may be placed overlapping with 001.

[0631] The housing 7701, the display portion 7001, and the battery 7709 are flexible. The portable information terminal 7700 can be bent into a desired shape and can also be twisted. For example, the display portion 7001 of the portable information terminal 7700 is Alternatively, the portable information terminal 7700 can be folded so that the front and rear faces are facing outward. The display unit 7701 and the display unit 7702 may be wound in a roll. Since the mobile information terminal 7700 can freely change shape, even if it is dropped, The advantage of this structure is that it is less likely to be damaged even if an external force is applied thereto unintentionally.

[0632] In addition, since the portable information terminal 7700 is lightweight, the upper part of the housing 7701 can be held with a clip or the like. Do not hang it from a wall or use it by fixing the housing 7701 to a wall with a magnet, etc. It can be conveniently used in a variety of situations.

[0633] FIG. 38(I) shows an example of a wristwatch-type portable information terminal. The device includes a keyboard 7801, a display unit 7001, an input / output terminal 7802, and an operation button 7803. The handheld terminal 7801 functions as a housing. The battery 7805 may be mounted on the display unit 70. 01 or band 7801, etc.

[0634] The band 7801, the display portion 7001, and the battery 7805 are flexible. Therefore, it is easy to bend the portable information terminal 7800 into a desired shape.

[0635] The operation button 7803 is used to set the time, turn the power on and off, and turn wireless communication on and off. It supports various functions such as auto-start, silent mode and power saving mode. For example, the operating system built into the portable information terminal 7800 can be Depending on the system, the functions of the operation buttons 7803 can be freely set.

[0636] In addition, by touching an icon 7804 displayed on the display unit 7001 with a finger or the like, the application You can start the application.

[0637] In addition, the portable information terminal 7800 can perform short-distance wireless communication in accordance with a communication standard. For example, by communicating with a wireless headset, You can also make calls using Lee.

[0638] The portable information terminal 7800 may also have an input / output terminal 7802. If the terminal has a 802, it can directly exchange data with other information terminals via a connector. Charging can also be performed via the input / output terminal 7802. The charging operation of the portable information terminal shown in the example is performed by non-contact power transmission without going through the input / output terminal. You may go.

[0639] FIG. 39(A) shows the exterior of the automobile 7900. FIG. 39(B) shows the driver's seat of the automobile 7900. The automobile 7900 includes a body 7901, wheels 7902, a windshield 7903, and a It also has lights 7904 and fog lights 7905.

[0640] The display device of one embodiment of the present invention can be used for a display portion of an automobile 7900, for example. For example, the display devices of one embodiment of the present invention can be used in the display portions 7910 to 7917 illustrated in FIG. A location can be provided.

[0641] The display portion 7910 and the display portion 7911 are provided on a windshield of the automobile. In one embodiment of the present invention, an electrode of a display device is formed using a light-transmitting conductive material. As a result, a so-called see-through display device can be obtained, in which the opposite side can be seen through. If the display device is in a see-through state, it will not obstruct the view when driving the car 7900. Therefore, the display device of one embodiment of the present invention is installed on the windshield of the automobile 7900. In addition, when a transistor or the like is provided in the display device, an organic semiconductor A light-transmitting organic transistor using a material or a transistor using an oxide semiconductor It is preferable to use a transistor having the following structure.

[0642] The display unit 7912 is provided on the pillar. The display unit 7913 is provided on the dashboard. For example, an image from an imaging means provided on the vehicle body is displayed on the display unit 7912. By extending the display, it is possible to compensate for the visibility obstructed by the pillar. The 913 can complement the view blocked by the dashboard, and the display 7914 This can complement the view blocked by the door. By projecting an image from the imaging means, blind spots can be compensated for and safety can be increased. In addition, by projecting images that complement the invisible parts, safety checks can be performed more naturally and without discomfort. This can be done.

[0643] The display unit 7917 is provided on the handle. 6, or display 7917 displays navigation information, speedometer, tachometer, driving It can provide a variety of information, such as distance traveled, fuel amount, gear status, air conditioning settings, and more. In addition, the display items and layout displayed on the display can be customized to suit the user's preferences. The above information can be displayed on the display units 7910 to 7914. can also be displayed.

[0644] Note that the display portions 7910 to 7917 can also be used as lighting devices.

[0645] The display unit to which the display device according to one embodiment of the present invention is applied may be flat. The display device of one embodiment may have a configuration that does not have a curved surface and is not flexible.

[0646] Figure 39 (C) and (D) show digital signage. The digital signage includes a housing 8000, a display unit 8001, and a screen. It also has an LED lamp, operation keys (power switch, or operation It may have a variety of functions, including a power switch, connection terminals, various sensors, a microphone, etc.

[0647] Figure 39(D) shows a digital signage attached to a cylindrical pillar.

[0648] The larger the display unit 8001 is, the more information can be displayed at one time. The wider the display unit 8001 is, the more easily it will catch people's attention, and the more effective it will be for advertising, for example. can.

[0649] By applying a touch panel to the display unit 8001, images or videos can be displayed on the display unit 8001. It is preferable because it not only displays information but also allows users to operate it intuitively. Or when used to provide information such as traffic information, intuitive operation is required. This can improve usability.

[0650] The portable game machine shown in FIG. 39(E) includes a housing 8101, a housing 8102, a display portion 8103, and a , a display unit 8104, a microphone 8105, a speaker 8106, an operation key 8107, Includes Tyrus 8108 etc.

[0651] The portable game machine shown in FIG. 39(E) has two display units (display unit 8103 and display unit 810 Note that the number of display units included in the electronic device of one embodiment of the present invention is not limited to two. If an electronic device has multiple display units, at least one At least one display portion may include the display device of one embodiment of the present invention.

[0652] FIG. 39(F) shows a notebook personal computer, which includes a housing 8111 and a display unit 811 2, a keyboard 8113, a pointing device 8114, etc.

[0653] The display device of one embodiment of the present invention can be applied to the display portion 8112.

[0654] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination. [Explanation of symbols]

[0655] 10 Display device 10a Touch Panel 11 Bulkhead 12 Liquid crystal 13. Monomer 14 Structure 14a Structure 14b Structure 15 Touch Sensor Panel 16 FPC 20 light 20a Light 21 Substrate 23 Conductive layer 23a Conductive layer 23b Conductive layer 24 Liquid crystal layer 25 Conductive Layer 30 Irradiation area 31 Substrate 32 Display section 34 Circuit 35 Wiring 35a Wiring 35b Wiring 36 FPC 36a FPC 36b FPC 37 IC 38 Diffuser 39 Polarizing Plate 40 Liquid crystal element 41a Substrate 41b Substrate 42a Adhesive layer 42b Adhesive layer 43a Peeling layer 43b Peeling layer 43c Peeling layer 43d Peeling layer 44a Support board 44b Support board 44c support board 44d Support board 44e Support board 44f Support board 45a Resin layer 45b Resin layer 46a Adhesive layer 50 Recess 51a Colored layer 51b Colored layer 52 Light blocking layer 53a Orientation film 53b Orientation film 60 Light emitting element 61 Insulating layer 62 Insulating layer 70 Transistor 70a transistor 70b transistor 71 Conductive layer 71a Conductive layer 71b Conductive layer 72 Semiconductor layer 73 Insulating Layer 74a Conductive layer 74b Conductive layer 75 Capacitive element 78 Conductive Layer 79 Insulating Layer 80 Connection 81 Insulating layer 82 Insulating layer 83 Insulating Layer 84 Insulating Layer 85 Insulating Layer 86 Insulating Layer 87 Insulating Layer 88 Insulating Layer 89 Adhesive layer 90 Light emitting element 91 Conductive Layer 92 EL layer 93 Conductive Layer 93a Conductive layer 93b Conductive layer 95 Resist Mask 99 Adhesive layer 111 Conductive layer 111a Conductive layer 111b Conductive layer 112 Liquid crystal 113 Conductive Layer 121 Insulating layer 130 Polarizing Plate 131 Colored layer 132 Light blocking layer 133a Alignment film 133b Alignment film 134 Colored layer 135 Light blocking layer 141 Adhesive layer 142 Adhesive layer 143 Adhesive layer 151 Conductive layer 152 Conductive layer 153 Conductive Layer 161 Insulating Layer 162 Insulating Layer 163 Insulating Layer 165 Adhesive layer 170 Substrate 191 Conductive Layer 192 EL layer 193a conductive layer 193b Conductive layer 201 Transistor 201a Transistor 201b Transistor 202 Transistor 203 Capacitive element 204 Connection 205 Transistor 206 Transistor 207 Connection 211 Insulating layer 212 Insulating layer 213 Insulating Layer 214 Insulating layer 216 Insulating Layer 217 Insulating Layer 220 Insulating layer 221 Conductive Layer 222 Conductive Layer 224 Conductive layer 231 Semiconductor Layer 242 Connection Layer 242a Connection Layer 242b Connection Layer 243 Connectors 251 Aperture 252 Connection 261 Insulating Layer 262 Insulating Layer 263 Insulating Layer 264 Insulating Layer 265 Insulating Layer 310 Transistor 310a Transistor 310b Transistor 310c transistor 310d Transistor 311 Conductive layer 311b Conductive layer 312 Semiconductor layer 312a Semiconductor layer 313a conductive layer 313b Conductive layer 313c conductive layer 313d conductive layer 314 Conductive layer 314a conductive layer 315 Conductive Layer 321 Conductive Layer 331 Insulating Layer 332 Insulating layer 333 Insulating Layer 334 Insulating Layer 335 Insulating Layer 336 Insulating Layer 337 Insulating Layer 340 Liquid crystal element 360 Light emitting element 360b Light emitting element 360g Light emitting element 360r Light emitting element 360w light emitting element 362 Display section 400 display device 410 pixels 451 Aperture 6000 Display Module 6001 Top cover 6002 Lower cover 6003 FPC 6004 Touch Panel 6005 FPC 6006 Display Panel 6009 Frame 6010 Printed Circuit Board 6011 Battery 7000 Display 7001 Display section 7100 Mobile Phone 7101 Case 7103 Operation button 7104 External connection port 7105 Speaker 7106 Microphone 7107 Camera 7110 Mobile phone 7200 Portable Information Terminal 7201 Case 7202 Operation button 7203 Information 7210 Portable Information Terminal 7300 Television Equipment 7301 Case 7303 Stand 7311 Remote control device 7400 Lighting Equipment 7401 Daibu 7403 Operation switch 7411 Light emitting part 7500 Mobile Information Terminal 7501 Case 7502 Materials 7503 Operation button 7600 Mobile Information Terminal 7601 Case 7602 Hinge 7650 Mobile Information Terminal 7651 Hidden part 7700 Portable Information Terminal 7701 Case 7703a Button 7703b Button 7704a Speaker 7704b Speaker 7705 External connection port 7706 Mike 7709 Battery 7800 Mobile Information Terminal 7801 Band 7802 Input / output terminal 7803 Operation button 7804 Icons 7805 Battery 7900 Automobiles 7901 Body 7902 Wheel 7903 Windshield 7904 Light 7905 Fog Lamp 7910 Display section 7911 Display section 7912 Display section 7913 Display section 7914 Display section 7915 Display section 7916 Display section 7917 Display section 8000 Chassis 8001 Display section 8003 Speaker 8101 Case 8102 Case 8103 Display section 8104 Display section 8105 Microphone 8106 Speaker 8107 Operation key 8108 Stylus 8111 Case 8112 Display section 8113 Keyboard 8114 Pointing Device

Claims

[Claim 1] A display device having a first electrode, a liquid crystal layer, a light-shielding layer, and an insulating layer, the first electrode has a function of reflecting visible light and blocking ultraviolet light; the first electrode is provided on the insulating layer; the liquid crystal layer has a first portion overlapping the first electrode and a second portion surrounding a part of the first portion; the second portion overlaps the light-shielding layer; the first portion includes a monomer and a liquid crystal; The second portion includes a polymer formed by polymerization of the monomer.

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