Doped amorphous optical device film and deposition via incorporation of dopant atom

Abstract

To provide an optical device, an optical film deposition method, and a material to expand the process window for amorphous optical film deposition via incorporation of dopant atoms, which are capable of depositing amorphous films at higher temperature, and capable of achieving significant cost savings and increased throughput.SOLUTION: In an optical device 100, a doped optical device film 101 is disposed over a surface 103 of an optical device substrate 102, includes an optical device layer including an optical device material and a dopant material distributed within the optical device layer, and is amorphous in order to achieve optical properties including a uniform refractive index greater than about 2.0 and low absorption loss. The optical device layer is formed when the optical device material is oxidized, nitrated, or oxy-nitrated and is deposited or flowed over the optical device substrate 102.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] FIELD OF THE DISCLOSURE Embodiments of the present disclosure relate generally to the manufacture of optical devices. More specifically, embodiments described herein provide doped optical device films, optical devices having doped structures, and methods of forming doped optical device films and structures. [Background technology]

[0002] Optical devices such as waveguides, planar optics, metasurfaces, color filters, and anti-reflective coatings are engineered to exhibit high refractive index and low absorption losses. Conductive materials have high refractive index and low absorption losses, which allows for efficient large-scale fabrication of optical devices.

[0003] Optical devices with polycrystalline films can be non-uniform, have high surface roughness, and be birefringent, whereas amorphous films are uniform, smooth, and have a uniform refractive index. However, conventional physical vapor deposition (PVD) processes for forming amorphous films for optical devices are performed at substrate temperatures below 30°C to suppress crystal formation. Processing temperatures for titanium dioxide below 30°C require specialized hardware, increasing manufacturing cost and complexity, while processing temperatures above about 30°C result in polycrystalline titanium dioxide films with significant non-uniformity. Furthermore, processing temperatures above about 200°C result in significant crystallinity in the film.

[0004] Thus, there is a need in the art for improved doped optical device films, optical devices having doped structures, and methods of forming doped optical device films and structures. Summary of the Invention

[0005] In one embodiment, a method is provided. The method includes disposing an optical device substrate on a substrate support. The substrate support is disposed within a chamber. The chamber includes an optical device material target disposed within the chamber and a dielectric target disposed within the chamber. The optical device material target includes an optical device material and the dielectric target includes a dopant material. A doped optical device film is deposited on the optical device substrate. Depositing the doped optical device film includes depositing the optical device material to form an optical device layer on a surface of the optical device substrate and depositing the dopant material in the optical device layer to form the doped optical device film. Depositing the optical device material includes providing a first power level to the optical device material target to deposit the optical device layer at a first deposition rate. Depositing the dopant material in the optical device layer includes providing a second power level to the dielectric target to deposit the dielectric target at a second deposition rate. The first deposition rate and the second deposition rate are different.

[0006] In another embodiment, a method is provided that includes placing an optical device substrate in a chamber containing a target having a pre-doped optical device material, the pre-doped optical device material including a first concentration of the optical device material and a second concentration of a dopant material, and power is provided to the target to deposit a doped amorphous optical device layer on the optical device substrate.

[0007] In another embodiment, a method is provided. The method includes disposing an optical device substrate on a substrate support. The substrate support is disposed in a chamber. The chamber includes an optical device material target disposed in the chamber and a dielectric target disposed in the chamber. The optical device material target includes a metallic material and the dielectric target includes a dopant material. A doped optical device film is deposited on the optical device substrate. Depositing the doped optical device film includes depositing the optical device material to form an optical device layer on a surface of the optical device substrate and depositing the dopant material in the optical device layer to form the doped optical device film. Depositing the optical device material includes providing a first power level to the optical device material target and providing an oxygen-containing gas to the chamber to deposit the optical device layer at a first deposition rate. Depositing the dopant material in the optical device layer includes providing a second power level to the dielectric target to deposit the dielectric target at a second deposition rate. The first deposition rate and the second deposition rate are different.

[0008] In yet another embodiment, an optical device is provided. The optical device includes an amorphous optical layer disposed over a surface of an optical device substrate. The amorphous optical layer includes an amorphous optical material and a dopant material, the dopant material being incorporated into the amorphous optical material.

[0009] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure briefly summarized above can be had by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings depict only exemplary embodiments, and therefore should not be considered as limiting the scope of the present disclosure, as other equally effective embodiments may be permitted. [Brief description of the drawings]

[0010] [Figure 1] 1 is a cross-sectional view of an optical device including a doped optical device film disposed on an optical device substrate according to an embodiment. [Figure 2A] 1 is a schematic cross-sectional view of a dual optical device structure disposed on an optical device substrate according to an embodiment. [Figure 2B] 1 is a schematic cross-sectional view of an angled optical device structure disposed on an optical device substrate according to an embodiment. [Diagram 3] 1 is a schematic cross-sectional view of a physical vapor deposition (PVD) processing chamber according to an embodiment. [Figure 4] 1 is a schematic cross-sectional view of a chemical vapor deposition (CVD) processing chamber according to an embodiment. [Diagram 5] 1 is a schematic top view of a cluster tool according to an embodiment. [Figure 6] FIG. 2 is a flow diagram of a method for fabricating a doped optical device film according to an embodiment. [Figure 7] FIG. 2 is a flow diagram of a method for fabricating a doped optical device film according to an embodiment. [Figure 8] FIG. 2 is a flow diagram of a method for fabricating a doped optical device film according to an embodiment. [Figure 9] FIG. 2 is a flow diagram of a method for fabricating a doped optical device film according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] For ease of understanding, wherever possible, the same reference numerals have been used to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0012] SUMMARY OF THE DISCLOSURE The embodiments described herein relate to the fabrication of optical devices. In particular, the embodiments described herein provide doped optical device films, optical devices having doped structures, and methods of forming doped optical device films and structures. The embodiments described herein provide doped optical device films and structures having an optical device layer having an optical device material concentration of an optical device material and a dopant material having a dopant concentration throughout the thickness of the doped optical device films and structures.

[0013] The optical device materials described and referenced herein have an optical device material refractive index of about 2.0 or greater. The dopant materials described and referenced herein have a dopant refractive index of less than 2.0. The combination of the optical device material and the dopant material uniformly distributed throughout constitutes a doped optical device film having an optical device refractive index of about 2.0 or greater. The optical device layer is formed when the optical device material is oxidized, nitrided, or oxynitrided and deposited or cast onto the optical device substrate. In one embodiment, which can be combined with other embodiments described herein, the optical device material includes a uniform distribution of the dopant material.

[0014] In one embodiment that can be combined with other embodiments described herein, the optical device material is a metal-containing material. Metal-containing materials include, but are not limited to, metals, metal oxides, metal nitrides, or metal oxynitrides. In another embodiment that can be combined with other embodiments described herein, the optical device material is a semiconductor material. Semiconductor materials include, but are not limited to, silicon (Si), germanium (Ge), silicon germanium (SiGe), III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, transparent conductive oxides, or combinations thereof. In other embodiments, the semiconductor material is an oxide, oxynitride, nitride, or carbide of Si, Ge, SiGe, III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, or transparent conductive oxides. Dopant materials include, but are not limited to, silicon (Si), aluminum (Al), niobium (Nb), titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), or hafnium (Hf), and oxides, nitrides, or oxynitrides thereof.

[0015] In one embodiment, the method includes disposing an optical device substrate on a substrate support disposed in a chamber. An optical device material is deposited to form an optical device layer on a surface of the optical device substrate. Depositing the optical device material includes providing a first power level to an optical device material target to deposit the optical device material at a first deposition rate. A dopant material is uniformly deposited in the optical device layer to form a doped optical device film. Depositing the dopant material includes providing a second power level to a dielectric target to deposit the dopant material at a second deposition rate.

[0016] FIG. 1 is a cross-sectional view of an optical device 100. A doped optical device film 101 is disposed on a surface 103 of an optical device substrate 102 according to embodiments described herein. The doped optical device film 101 is formed by methods 600, 700, 800, and 900 described herein. The optical device substrate 102 is any suitable optical device substrate on which an optical device may be formed. In one embodiment, the optical device substrate 102 includes, but is not limited to, silicon (Si), silicon nitride (SiN), silicon dioxide (SiO2), fused silica, quartz, silicon carbide (SiC), germanium (Ge), silicon germanium (SiGe), indium phosphide (InP), gallium arsenide (GaAs), gallium oxide (GaO), diamond, lithium niobate (LiNbO3), gallium nitride (GaN), sapphire, tantalum oxide (Ta2O5), titanium dioxide (TiO2), or combinations thereof. The optical device substrate 102 may include an optically transparent perovskite material.

[0017] The doped optical device film 101 includes an optical device layer that includes an optical device material. The doped optical device film 101 also includes a dopant material distributed within the optical device layer. The doped optical device film 101 is amorphous to achieve optical properties including a uniform refractive index greater than about 2.0 and low absorption losses. The optical device layer is formed when the optical device material is oxidized, nitrided, or oxynitrided and deposited or flowed onto the optical device substrate 102. Examples of doped optical device films 101 that may be formed from the reaction of an optical device material with a dopant material include, but are not limited to, tantalum pentoxide (Ta2O5), zirconium dioxide (ZrO2), indium oxide (In2O3), or hafnium oxide (HfO2).

[0018] The doped optical device film 101 has a thickness 110. The thickness 110 is divided into a series of zones 115. In one embodiment, which may be combined with other embodiments described herein, the thickness 110 has a uniform or substantially uniform distribution of dopant material throughout the series of zones 115. In one embodiment, the doped optical device film 101 comprises an optical device refractive index of greater than about 2.0 that is uniform throughout the thickness 110. In another embodiment, the doped optical device film 101 comprises an optical device refractive index of about 2.6 to about 2.7 that is uniform throughout the thickness 110.

[0019] The dopant materials described and referenced herein have a dopant refractive index of less than 2.0. The combination of the optical material that makes up the optical layer and the dopant material distributed throughout forms a doped optical film 101 with an optical refractive index of about 2.0 or greater.

[0020] The doped optical device film 101 includes an optical device material at an optical device material concentration and a dopant material at a dopant material concentration. The optical device material includes one or both of a metal-containing material and a semiconductor material. Adjusting the optical device material concentration, the optical device material refractive index, the dopant material concentration, and the dopant material refractive index will determine the optical properties of the optical device film 101, such as the optical device refractive index.

[0021] In one embodiment, which may be combined with other embodiments described herein, the doped optical device film 101 includes an optical device material concentration of about 85% to about 100% atomic percentage. In another embodiment, which may be combined with other embodiments described herein, the doped optical device film 101 includes a dopant material at a dopant concentration of about 0% to about 15% atomic percentage. A dopant concentration of about 0 to about 50% affects the morphology of the doped optical device film 101 without a significant deleterious increase in the refractive index of the optical device layer.

[0022] To obtain the desired optical properties, the dopant material may be distributed in the optical device layer and maintained within a temperature process window. In some embodiments, the dopant material is uniformly distributed in the optical device layer. The temperature process window is the temperature range in which the optical device layer is formed amorphous to achieve optical properties including uniform high refractive index and low absorption loss. In the absence of the dopant material, the optical device layer is formed amorphous within a temperature process window and forms a crystalline structure when the optical device layer exceeds the temperature process window. The optical device layer without the dopant material is formed amorphous within a temperature process window below 30° C. and becomes crystalline above 30° C. The dopant material uniformly incorporated in the optical device layer inhibits the growth of crystalline structures and expands the temperature process window of the formed doped optical device film 101, as described in methods 600, 700, 800, and 900. An optical device layer having a dopant material uniformly incorporated therein at a dopant concentration (e.g., 5 atomic %) extends the temperature process window at which the doped optical device film 101 is formed amorphous to temperatures greater than about 30° C., e.g., a temperature process window between about 30° C. and 300° C.

[0023] 2A is a schematic cross-sectional view of a binary optical device structure 201a disposed on an optical device substrate 102. FIG 2B is a schematic cross-sectional view of an angled optical device structure 201b disposed on an optical device substrate 102. The optical devices 200a, 200b include optical device structures 201a, 201b disposed on a surface 103 of the optical device substrate 102. The optical device structures 201a, 201b may be formed, for example, by etching a doped optical device film 101 formed by methods 600, 700, 800, and 900 described herein.

[0024] As shown in Figure 2A, the optical device structure 201a is a binary (i.e., vertical) structure. As shown in Figure 2A, the optical device structure 201a includes a top surface 204 that is parallel to the surface 103 of the optical device substrate 102. A first sidewall 205 and a second sidewall 206 are parallel to a third sidewall 207 and a fourth sidewall 208. The sidewalls 205, 206, 207, and 208 are oriented in a direction parallel to a major axis of the optical device substrate 102.

[0025] As shown in Figure 2B, the optical device structure 201b is an angled structure. As shown in Figure 2B, the optical device structure 201b includes a first sidewall 205 and a second sidewall 206 that are parallel to a third sidewall 207 and a fourth sidewall 208. The sidewalls 205, 206, 207, and 208 are inclined with respect to the surface 103 of the optical device substrate 102.

[0026] The optical device structures 201a, 201b formed from the optical device film 101 include an optical device material concentration of the optical device material and a dopant material concentration of the dopant material distributed throughout the thickness 110 of the optical device film 101. The distribution of the dopant material throughout the thickness 110 provides a uniform refractive index greater than about 2.0 and low absorption losses.

[0027] 3 is a schematic cross-sectional view of a PVD chamber 300. It is understood that the PVD chamber 300 described below is an exemplary PVD chamber, and that other PVD chambers, including PVD chambers from other manufacturers, may be used or modified to accomplish aspects of the present disclosure. The PVD chamber 300 may be used for methods 600, 700, 800, and 900 described herein.

[0028] The PVD chamber 300 is utilized to form the doped optical film 101. The PVD chamber 300 includes multiple cathodes including at least one dielectric target cathode 302 and at least one optical material target cathode 303 with a corresponding multiple targets including at least one dielectric target 304 and at least one optical material (e.g., metal or semiconductor) target 306 mounted in a chamber body 308. Although FIG. 3 shows one dielectric target 304 and one optical material target 306, the PVD chamber 300 may include one or more dielectric targets 304 and / or one or more optical material targets 306. For example, three to five targets selected from at least one of the dielectric target 304 or the optical material target 306 may be included in the PVD chamber 300. In embodiments having one or more dielectric targets 304 and one or more optical device material targets 306, each dielectric target 304 is operable to deposit a different dopant material and / or each optical device material target 306 is operable to deposit a different optical device material.

[0029] The PVD chamber 300 is configured to include a substrate support 310 having a support surface 312 for supporting the optical device substrate 102. The PVD chamber 300 includes an opening 334 (e.g., a slit valve) through which the optical device substrate may enter the processing space 305.

[0030] 3, the substrate support 310 includes an RF bias power supply 314 coupled to a bias electrode 316 disposed within the substrate support 310. The PVD chamber 300 includes a sputter gas source 336 that provides a sputter gas, such as argon (Ar). The PVD chamber 300 includes a reactive gas source 338 that provides a reactive gas, such as an oxygen-containing gas or a nitrogen-containing gas.

[0031] The substrate support 310 includes a mechanism (not shown) for holding the optical device substrate 102 on a support surface 312 of the substrate support 310, such as an electrostatic chuck, a vacuum chuck, a substrate holding clamp, or the like. The substrate support 310 is configured to include a cooling conduit 318 disposed therein that controllably cools the substrate support 310 and the optical device substrate 102 positioned thereon to a predetermined temperature, for example, between about 30° C. and about 300° C. The cooling conduit 318 is coupled to a cooling fluid source 320 that provides the cooling fluid. The substrate support 310 is further configured to include a heater 322 embedded therein. The heater 322, such as a resistive element disposed within the substrate support 310, is coupled to an optional heater power supply 324 that controllably heats the substrate support 310 and the optical device substrate 102 positioned thereon to a predetermined temperature, for example, between about 30° C. and about 300° C. Each target (e.g., dielectric target 304 or optical material target 306) has a DC power supply 326 or an RF power supply 328 and an associated magnetron. The multiple power supplies allow both DC and RF powered processes to occur within the same PVD chamber 300.

[0032] The PVD chamber 300 includes a process gas supply 330 for supplying a predetermined process gas to a process space 305 of the PVD chamber 300. For example, the process gas supply 330 supplies an oxygen-containing gas to the process space 305 to create an oxidizing environment in the process space 305. The PVD chamber 300 may also include a precursor gas source 332 for supplying a precursor gas, such as a gaseous dopant precursor, which is controlled by a precursor gas flow controller 331.

[0033] 4 is a schematic cross-sectional view of a CVD chamber 400. It is understood that the CVD chamber 400 described below is an exemplary CVD chamber, and that other CVD chambers, including CVD chambers from other manufacturers, may be used or modified to accomplish aspects of the present disclosure.

[0034] The CVD chamber 400 has a chamber body 408 that includes a processing space 405 in which a substrate support 410 is disposed to support the optical device substrate 102 thereon. The substrate support 410 includes heating / cooling conduits 414 and a mechanism for holding the optical device substrate 102 on a support surface 412 of the substrate support 410, such as an electrostatic chuck, a vacuum chuck, a substrate holding clamp, etc. The substrate support 410 is coupled and movably disposed within the processing space 405 by a stem 406 that is coupled to a lift system (not shown) that moves the substrate support 410 between an elevated processing position and a lowered position that facilitates transfer of the optical device substrate 102 to and from the CVD chamber 400 through an opening 420.

[0035] The CVD chamber 400 includes flow controllers 418a, 418b, such as mass flow control (MFC) devices, disposed between the first gas source 402, the second gas source 403, and the chamber body 408 to control the flow of process gas from the first gas source 402 and the second gas source 403 to a showerhead 404 used to distribute process gas across the process space 405. The first gas source 402 is operable to contain an optical device material. The second gas source 403 is operable to contain a dopant material. Although FIG. 4 shows two gas sources 402, 403, the CVD chamber 400 may include one or more first gas sources 402 and / or one or more second gas sources 403. For example, three to five gas sources selected from at least one of the first gas source 402 or the second gas source 402 may be included in the chamber 300. In embodiments having one or more first gas sources 402 and one or more second gas sources 403, each first gas source 402 can be operable to deposit a different optical device material and / or each second gas source 403 can be operable to deposit a different dopant material.

[0036] The showerhead 404 is connected to an RF power supply 416 by an RF feed 422 for generating a plasma in the processing space 405 from the processing gases. The RF power supply 416 provides RF energy to the showerhead 404 to facilitate the generation of a plasma between the showerhead 404 and the substrate support 410. The stem 406 is configured to move the substrate support 410 to an elevated processing position.

[0037] 5 is a schematic diagram of a cluster tool 502 in a factory environment 501. It should be understood that the cluster tool 502 described herein is an exemplary cluster tool and may be used with or modified to implement aspects of the present disclosure. The cluster tool 602 described herein may be utilized in the methods 700, 800, 900, and 1000 described herein.

[0038] The cluster tool 502 includes a transfer chamber 506 surrounded by one or more processing chambers 504. The processing chambers 504 may include any suitable type of processing chamber for forming the doped optical device film 101 described herein. In one embodiment, which may be combined with other embodiments described herein, the processing chamber 504 may be a PVD chamber 300. In another embodiment, which may be combined with other embodiments described herein, the processing chamber 504 may be a CVD chamber 400. In yet another embodiment, which may be combined with other embodiments described herein, the processing chamber 504 may be a combination of a PVD chamber 300 and a CVD chamber 400.

[0039] Additionally, the cluster tool 502 includes a substrate access chamber 508 coupled to a load lock chamber 510. In one embodiment, the substrate access chamber 508 may be utilized to connect the factory environment 501, which is at atmospheric pressure, to the load lock chamber 510, which is under vacuum pressure. In one embodiment, which may be combined with other embodiments described herein, the cluster tool 502 may be utilized for single chamber processing, where the processing chamber 504 is a PVD chamber 300 having at least two targets (e.g., a dielectric target 304 or an optical device material target 306). In another embodiment, which may be combined with other embodiments described herein, the cluster tool 502 may be utilized for multi-chamber processing, where the multiple processing chambers are PVD chambers 300, CVD chambers 400, or a combination of both, as in methods 600 to 900. The cluster tool 502 will transfer the optical device substrate 102 between the multiple processing chambers 504 so that an optical device layer or dopant material may be deposited in each of the series of zones 115 of each processing chamber 504. The optical device substrate enters each chamber 504 through openings 334, 420 in the PVD chamber 300 and CVD chamber 400, respectively.

[0040] FIG. 6 is a flow diagram of a method 600 for fabricating a doped optical device film 101. For ease of explanation, FIG. 6 is described with reference to the PVD chamber 300 of FIG. 3 and the cluster tool 502 of FIG. 5. However, it should be noted that a PVD chamber other than the PVD chamber 300 of FIG. 3 may be used in conjunction with the method 600. It should also be noted that a cluster tool other than the cluster tool 502 of FIG. 5 may be used in conjunction with the method 600. The cluster tool 502 as described above may be used when the processing chamber 504 is the PVD chamber 300. The method 600 deposits an optical device material on the optical device substrate 102 to form an optical device. In one embodiment, which may be combined with other embodiments described herein, the dopant material may be uniformly deposited throughout the thickness 110 of the optical device layer.

[0041] In operation 601, an optical device substrate 102 intended for coating is placed on a substrate support in the PVD chamber 300. For example, the optical device substrate 102 is placed on the substrate support 310.

[0042] In operation 602, an optical device material is deposited. The optical device material is deposited from one or more optical device material targets 306 to form an optical device layer on the optical device substrate 102. The optical device material is one or both of a metal-containing material and a semiconductor material. The optical device material is deposited via a PVD process. In one embodiment that can be combined with other embodiments described herein, the PVD process is a sputtering process. In another embodiment that can be combined with other embodiments described herein, the PVD process is an evaporation process.

[0043] In an embodiment when the optical device material is a metal, the optical device layer is formed when the deposited metal of the one or more optical device material targets 306 reacts with a reactive gas to form the optical device layer on the optical device substrate 102. The reactive gas source 338 provides a reactive gas, such as an oxygen-containing gas or a nitrogen-containing gas. For example, the optical device material of pure titanium is deposited, and as the reactive gas, such as oxygen, titanium dioxide (TiO2) is formed. In an embodiment when the optical device material is a metal oxide, metal nitride, or metal oxynitride, the optical device layer is formed when the optical device material is deposited on the optical device substrate 102. The optical device material target cathode 303 coupled to the one or more optical device material targets 306 is set to a first power level to deposit the optical device material at a first deposition rate. When the first power level is applied, the first power level can remain constant throughout operations 602 and 603. The PVD chamber 300 can include one or more optical device material targets 306. For example, three to five targets selected from at least one of the optical material targets 306 may be included in the PVD chamber 300. In embodiments having one or more optical material targets 306, each optical material target 306 is operable to deposit a different optical material.

[0044] The first power level of the target cathode ranges from about 0% to about 100%. For example, the first power level of the target cathode is about 80% and the corresponding first deposition rate is about 0.35 nm / s. In one embodiment, the optical device layer comprises an optical device material concentration of about 85% to about 100% atomic percentage. In one embodiment, the optical device material comprises a first refractive index. The first refractive index is greater than 2.0. For example, the first refractive index is between about 2.0 and about 2.8. In an embodiment when the optical device material is a metal-containing material, the metal-containing material may be, but is not limited to, a metal, metal oxide, metal nitride, or metal oxynitride, such as titanium dioxide (TiO2), tantalum pentoxide (Ta2O5), zirconium dioxide (ZrO2), indium oxide (In2O3), or hafnium oxide (HfO2). In embodiments where the optical device material is a semiconductor material, the semiconductor material includes, but is not limited to, silicon (Si), germanium (Ge), silicon germanium (SiGe), III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, transparent conductive oxides, or combinations thereof. In other embodiments, the semiconductor material is an oxide, oxynitride, nitride, or carbide of Si, Ge, SiGe, III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, or transparent conductive oxides.

[0045] In operation 603, a dopant material is deposited. The dopant material is deposited from a dielectric target 304 to form a doped optical device film 101 on the optical device substrate 102. In one embodiment, which can be combined with other embodiments described herein, the dopant material is deposited to be uniformly concentrated in the optical device layer to form one or more zones of the doped optical device film 101. A dielectric target cathode 302 coupled to the dielectric target 304 is set to a second power level to deposit the dopant material at a second deposition rate. The second power level of the dielectric target cathode 302 ranges between about 0% and about 100%. For example, the second power level of the dielectric target cathode 302 is about 80%, and the corresponding second deposition rate is about 0.35 nm / s. In one embodiment, the doped optical device film 101 includes the dopant material at an atomic percentage dopant concentration of about 0% to 15%. Dopant materials include, but are not limited to, silicon (Si), aluminum (Al), niobium (Nb), titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), or hafnium (Hf), and oxides, nitrides, or oxynitrides thereof. The PVD chamber 300 may include one or more dielectric targets 304. For example, three to five targets selected from at least one of the dielectric targets 304 may be included in the PVD chamber 300. In embodiments having one or more dielectric targets 304, each dielectric target 304 is operable to deposit a different dopant material.

[0046] In one embodiment, which may be combined with other embodiments described herein, operations 602 and 603 are repeated with intervals of successively applying a first power level to the optical device material target cathode 303 and an interval of applying a second power level to the dielectric target cathode 302. In another embodiment, deposition of the dopant material at the second power level is performed by pulsing the second power level at a set frequency while depositing the optical device material. In yet another embodiment, which may be combined with other embodiments described herein, the optical device material and the dopant material are simultaneously deposited by simultaneously applying the first power level and the second power level to a target (e.g., the dielectric target 304 or the optical device material target 306) to form a doped optical device film 101. In one embodiment, which may be combined with other embodiments described herein, a single performance of operations 602 and 603 forms all of the series of zones 115. In another embodiment, a single performance of operations 602 and 603 forms a portion of the doped optical device film 101, where the portion may correspond to one or more of the series of zones 115. Each zone of the series of zones 115 may be 20 nm to 25 nm of the thickness 110. Operations 602 and 603 are repeated until the predetermined thickness 110 is reached. In one embodiment, which may be combined with other embodiments described herein, operations 602 and 603 may be performed in a PVD chamber 300 having at least two targets (e.g., a dielectric target 304 or an optical device material target 306). In another embodiment, which may be combined with other embodiments described herein, operations 602 and 603 may be performed in a multi-processing chamber 504 of a cluster tool 502. For example, the optical device substrate 102 is transferred between at least two processing chambers 504. At least one of the processing chambers 504 is a PVD chamber 300 containing an optical device material target 306 and at least one other of the processing chambers 504 is a PVD chamber 300 containing a dielectric target 302 .

[0047] Figure 7 is a flow diagram of a method 700 for fabricating a doped optical device film 101. For ease of explanation, Figure 7 will be described with reference to the PVD chamber 300 of Figure 3 and the cluster tool 502 of Figure 5. However, it should be noted that a PVD chamber other than the PVD chamber 300 of Figure 3 may be utilized in conjunction with the method 700. It should also be noted that a cluster tool other than the cluster tool 502 of Figure 5 may be utilized in conjunction with the method 700. A cluster tool 502 as described above may be utilized when the processing chamber 504 is the PVD chamber 300.

[0048] In operation 701, an optical device substrate 102 intended for coating is placed on a substrate support in the PVD chamber 300. For example, the optical device substrate 102 is placed on the substrate support 310.

[0049] In operation 702, a pre-doped optical device material is deposited. The pre-doped optical device material is deposited from one or more optical device material targets 306 to form one or more zones 115 of a doped optical device film 101 on an optical device substrate 102. The pre-doped optical device material includes an optical device material and a dopant material. The pre-doped optical device material may include one or both of a metal-containing material or a semiconductor material. The metal-containing material may include, but is not limited to, a metal, metal oxide, metal nitride, or metal oxynitride, such as titanium dioxide (TiO2), tantalum pentoxide (Ta2O5), zirconium dioxide (ZrO2), indium oxide (In2O3), or hafnium oxide (HfO2). Semiconductor materials include, but are not limited to, silicon (Si), germanium (Ge), silicon germanium (SiGe), III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, transparent conductive oxides, or combinations thereof. In other embodiments, the semiconductor material is an oxide, oxynitride, nitride, or carbide of Si, Ge, SiGe, III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, or transparent conductive oxides.

[0050] In an embodiment in which the pre-doped optical device material is a metal, the deposited metal reacts with the reactive gas to form one or more zones 115 of the doped optical device film 101 on the optical device substrate 102. The pre-doped optical device material further includes a dopant material, including but not limited to silicon (Si), aluminum (Al), niobium (Nb), titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), or hafnium (Hf), and oxides, nitrides, or oxynitrides thereof. In one embodiment, which can be combined with other embodiments described herein, the dopant material is pre-doped uniformly throughout the pre-doped optical device material. The PVD chamber 300 may include one or more optical device material targets 306. For example, 3-5 targets selected from at least one of the optical device material targets 306 may be included in the PVD chamber 300. In an embodiment having one or more optical device material targets 306, each optical device material target 306 is operable to deposit a different pre-doped optical device material. In one embodiment, the pre-doped optical device material has a first refractive index. The first refractive index is greater than 2.0. For example, the first refractive index is between about 2.0 and about 2.8.

[0051] The optical device material target cathode 303 coupled to the optical device material target 306 is set to a first power level to deposit the pre-doped optical device material at a first deposition rate. When the first power level is applied, the first power level remains constant throughout operation 702. The pre-doped optical device material provided from the optical device material target 306 has a predetermined concentration, and the concentration of the pre-doped optical device material corresponds to the concentration of the doped optical device film 101. In one embodiment, which may be combined with other embodiments described herein, the pre-doped optical device material includes an optical device material concentration of about 85% to about 100% atomic percentage and a dopant material concentration of about 0% to 15% atomic percentage. For example, the pre-doped optical device material is a titanium dioxide (TiO2) optical device material having a dopant material such as silicon dioxide (TiO2) at an atomic percentage of 5% in the material. In one embodiment, the temperature of deposition of the pre-doped optical material is kept below about 270° C. to prevent the formation of titanium dioxide (TiO 2 ) grains in the doped optical film 101 .

[0052] In another embodiment, which may be combined with other embodiments described herein, a single application of operation 702 forms all of the zones in the series of zones 115. In another embodiment, repetitions of operation 702 form a portion of the doped optical device film 101, where the portion may correspond to one or more zones in the series of zones 115.

[0053] In yet another embodiment, which can be combined with other embodiments described herein, one or more optical device material targets 306 are operable to deposit a pre-doped metal-containing material and a pre-doped semiconductor material. The pre-doped metal-containing material may be deposited simultaneously with the pre-doped semiconductor material to form a series of zones 115. The pre-doped metal-containing material and the pre-doped semiconductor material may be deposited separately from the same optical device material target 306 or from different optical device material targets 306.

[0054] In yet another embodiment, which can be combined with other embodiments described herein, the one or more optical device material targets 306 are operable to deposit pre-doped metal-containing materials from two or more of the optical device material targets 306 to form a series of zones 115. The pre-doped metal-containing materials may be deposited individually from the same optical device material target 306 or may be deposited from different optical device material targets 306.

[0055] FIG. 8 is a flow diagram of an exemplary method 800 for fabricating a doped optical device film 101. For ease of explanation, FIG. 8 is described with reference to the PVD chamber 300 of FIG. 3, the CVD chamber 400 of FIG. 4, and the cluster tool 502 of FIG. 5. However, it should be noted that a PVD chamber other than the PVD chamber 300 of FIG. 3 may be used in conjunction with the method 800. It should be noted that a CVD chamber other than the CVD chamber 400 of FIG. 4 may be used in conjunction with the method 800. It should also be noted that a cluster tool other than the cluster tool 502 of FIG. 5 may be used in conjunction with the method 800. The cluster tool 502 as described above may be used when the processing chamber 504 is the PVD chamber 300 or the PVD chamber 400. In one embodiment, the processing chamber is a modified PVD chamber, for example a modified version of the PVD chamber 300 described in FIG. 3 equipped to supply dopant precursors (e.g., dopant precursors supplied from a precursor gas source 332 controlled by a precursor gas flow controller 331).

[0056] In operation 801, a substrate intended for coating is placed on a substrate support in the PVD chamber 300. For example, the optical device substrate 102 is placed on the substrate support 310.

[0057] In operation 802, an optical device material is deposited. The optical device material is deposited from one or more optical device material targets 306 to form an optical device layer on the optical device substrate 102. The optical device material may include one or both of a metal-containing material or a semiconductor material. In one implementation of operation 802, the process chamber is a PVD chamber, such as the multi-cathode PVD chamber of FIG. 4, and includes an optical device material target cathode 303. The optical device material target cathode 303 is operated at a first power level to deposit the optical device material at a first deposition rate. The optical device material is deposited on the surface of the optical device substrate 102 by setting the optical device material target cathode 303 to a first power level to deposit the optical device material at the first deposition rate to form the optical device layer. For example, the first power level of the optical device material target cathode 303 ranges from about 0% to about 100%. For example, the first power level of the optical material target cathode 303 is about 80% and the first deposition rate is about 0.35 nm / s. The PVD chamber 300 may include one or more optical material targets 306. For example, three to five targets selected from at least one of the optical material targets 306 may be included in the PVD chamber 300. In embodiments having one or more optical material targets 306, each optical material target 306 is operable to deposit a different optical material.

[0058] The optical device layer includes an optical device material at a certain optical device material concentration. For example, the optical device material concentration is between about 85% and 100% atomic percentage. In one embodiment, the optical device material includes a first refractive index. The first refractive index is greater than 2.0. For example, the first refractive index is between about 2.0 and about 2.8.

[0059] In operation 803, a dopant precursor is flowed. The dopant precursor includes a dopant material flowed from a precursor gas source 332 corresponding to the PVD chamber 300 or a second gas source 403 corresponding to the CVD chamber 400. The dopant precursor is flowed to form a doped optical device film 101 on the optical device substrate 102. The dopant precursor includes, but is not limited to, silicon (Si), aluminum (Al), niobium (Nb), titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), or hafnium (Hf), and oxides, nitrides, or oxynitrides thereof. In one embodiment, which can be combined with other embodiments described herein, the dopant precursor is flowed to be uniformly concentrated in the optical device layer to form one or more zones of the doped optical device film 101. The optical device material reacts with the dopant precursor to form the doped optical device film 101 on the surface of the optical device substrate 102.

[0060] The dopant precursor is flowed at a second power level to deposit the dopant precursor at a flow rate. In one embodiment, which may be combined with other embodiments described herein, the precursor gas flow controller 331 coupled to the precursor gas source 332 is set to the second power level. In another embodiment, which may be combined with other embodiments described herein, the second flow controller 418b coupled to the second gas source 403 is set to the first power level. The PVD chamber 300 may include one or more precursor gas sources 332. For example, three to five precursor gas sources 332 may be included in the PVD chamber 300. In an embodiment having one or more precursor gas sources 332, each optical device material target 306 is operable to deposit a different optical device material. The CVD chamber 400 may include one or more second gas sources 403. For example, three to five second gas sources 403 may be included in the CVD chamber 400. In embodiments having one or more second gas sources 403, each second gas source 403 is operable to deposit a different dopant precursor.

[0061] In one embodiment that may be combined with other embodiments described herein, the deposition rate of the optical device material exceeds the flow rate of the dopant precursor, so that the dopant material has a lower concentration in the doped optical device film 101 than the optical device material. When the second power level is applied, the second power level remains constant throughout operation 803. In one embodiment that may be combined with other embodiments described herein, the first power level and the second power level may be different. The optical device material provided by the optical device material target 306 and the dopant precursor provided by the precursor gas source 332 or the second gas source 403 have a predetermined concentration, and the concentration of the optical device material and the dopant material combination corresponds to a concentration in the doped optical device film 101. In one embodiment that may be combined with other embodiments described herein, the optical device material includes an optical device material concentration of about 85% to about 100% atomic percentage, and the dopant precursor includes a dopant material concentration of about 0% to 15% atomic percentage.

[0062] In one embodiment, which may be combined with other embodiments described herein, operations 802 and 803 are repeated with intervals of applying a first power level to the optical device material target cathode 303 and an interval of applying a second power level to the precursor gas flow controller 331 or the second flow controller 418b. In another embodiment, deposition of the dopant material at the second power level is performed by pulsing the second power level at a set frequency while depositing the metal optical device material. In yet another embodiment, which may be combined with other embodiments described herein, the optical device material is deposited and the dopant precursor is simultaneously flowed by simultaneously applying the first and second power levels to form the doped optical device film 101.

[0063] In one embodiment, which may be combined with other embodiments described herein, a single performance of operations 802 and 803 forms all of the series of zones 115 of the doped optical device film 101. In another embodiment, a single performance of operations 802 and 803 forms a portion of the doped optical device film 101, which may correspond to one or more zones of the series of zones 115. Each zone of the series of zones 115 may be every 20 nm to 25 nm of thickness 110. Operations 802 and 803 are repeated until the predetermined thickness 110 of the doped optical device film 101 is achieved.

[0064] In one embodiment, which may be combined with other embodiments described herein, operations 802 and 803 may be performed in a PVD chamber 300 having at least an optical device material target 306 and a precursor gas source 332. In another embodiment, which may be combined with other embodiments described herein, operations 801 and 802 may be performed in a multi-processing chamber 504 of a cluster tool 502. For example, the optical device substrate 102 is transferred between at least two processing chambers 504. At least one of the processing chambers 504 is a PVD chamber 300 including an optical device material target 306, and at least another of the processing chambers 504 is a PVD chamber 300 including a precursor gas source 332. In another embodiment, at least one of the processing chambers 504 is a PVD chamber 300 including an optical device material target 306, and at least another of the processing chambers 504 is a CVD chamber 400 including a second gas source 403.

[0065] Diagram 900 is a flow diagram of an exemplary method 900 for fabricating doped optical device film 101. For ease of explanation, FIG. 9 is described with reference to CVD chamber 400 of FIG. 4 and cluster tool 502 of FIG. 5. However, it should be noted that CVD chambers other than CVD chamber 400 of FIG. 4 may be utilized in conjunction with method 900. It should also be noted that cluster tools other than cluster tool 502 of FIG. 5 may be utilized in conjunction with method 700. A cluster tool 502 as described above may be utilized when processing chamber 504 is CVD chamber 400.

[0066] In operation 901, a substrate intended for coating is placed on a substrate support in the CVD chamber 400. For example, the optical device substrate 102 is placed on the substrate support 410.

[0067] In operation 902, an optical device material precursor is flowed. The optical device material precursor comprises an optical device material flowed from the first gas source 402 to form an optical device layer on the optical device substrate 102. The optical device material may comprise one or both of a metal-containing material or a semiconductor material. Metal-containing precursors include, but are not limited to, metals, metal oxides, metal nitrides, or metal oxynitrides, such as titanium dioxide (TiO2), tantalum pentoxide (Ta2O5), zirconium dioxide (ZrO2), indium oxide (In2O3), or hafnium oxide (HfO2). Semiconductor precursors include, but are not limited to, silicon (Si), germanium (Ge), silicon germanium (SiGe), III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, transparent conductive oxides, or combinations thereof. In other embodiments, the semiconductor precursor is an oxide, oxynitride, nitride, or carbide of Si, Ge, SiGe, a III-V semiconductor, a II-IV semiconductor, a ternary semiconductor, a quaternary semiconductor, or a transparent conducting oxide.

[0068] In an embodiment when the optical device material is a metal, the optical device layer is formed when the flowed metal of the first gas source 402 reacts with the reactive gas to form the optical device layer on the optical device substrate 102. In an embodiment when the optical device material is a metal oxide, metal nitride, or metal oxynitride, the optical device layer is formed when the optical device material is flowed onto the optical device substrate 102. A first flow controller 418a coupled to the first gas source 402 is set to a first power level to flow the optical device material precursor at a flow rate. When the first power level is applied, the first power level remains constant throughout operations 902 and 903. The CVD chamber 400 may include one or more first gas sources 402. For example, three to five first gas sources 402 may be included in the chamber 300. Each first gas source 402 is operable to deposit a different optical device material. The CVD chamber 400 may include one or more first gas sources 403. For example, three to five first gas sources 402 may be included in the CVD chamber 400. In embodiments having one or more first gas sources 402, each first gas source 402 is operable to deposit a different dopant precursor.

[0069] In operation 903, a dopant precursor is flowed. The dopant precursor includes a dopant material flowed from the second gas source 403. The dopant precursor is flowed to form a doped optical device film 101 on the optical device substrate 102. The dopant precursor includes, but is not limited to, silicon (Si), aluminum (Al), niobium (Nb), titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), or hafnium (Hf), and oxides, nitrides, or oxynitrides thereof. In one embodiment, which can be combined with other embodiments described herein, the dopant precursor is flowed to be uniformly concentrated in the optical device layer to form one or more zones of the doped optical device film 101. In an embodiment when the optical device material precursor is a titanium precursor and the dopant precursor is oxygen (O2), the metal-containing precursor reacts with the precursor to form titanium dioxide (TiO2).

[0070] The dopant precursor is flowed at a second power level to deposit the dopant precursor at a flow rate. In one embodiment that may be combined with other embodiments described herein, the second flow controller 418b coupled to the second gas source 403 is set to a second power level. In one embodiment that may be combined with other embodiments described herein, the flow rate of the optical device material precursor exceeds the flow rate of the dopant precursor, so that the dopant material has a lower concentration in the doped optical device film 101 than the optical device material. When the second power level is applied, the second power level remains constant throughout operation 903. In one embodiment that may be combined with other embodiments described herein, the first power level and the second power level may be different. The optical device material provided by the first gas source 402 and the dopant precursor provided by the second gas source 403 have a predetermined concentration, and the concentration of the combination of the optical device material and the dopant material corresponds to the concentration in the doped optical device film 101. In one embodiment, which may be combined with other embodiments described herein, the optical device material precursor comprises an optical device material concentration of about 85% to about 100% atomic percentage, and the dopant precursor comprises a dopant material concentration of about 0% to 15% atomic percentage. The CVD chamber 400 may include one or more second gas sources 403. For example, three to five second gas sources 403 may be included in the chamber 300. Each second gas source 403 is operable to deposit a different dopant precursor.

[0071] In one embodiment, which may be combined with other embodiments described herein, operations 902 and 903 are repeated with an interval of applying a first power level to the first flow controller 418a and an interval of applying a second power level to the second flow controller 418b. In another embodiment, flowing the dopant precursor at the second power level is performed by pulsing the second power level at a set frequency while flowing the optical device material precursor. In yet another embodiment, which may be combined with other embodiments described herein, the optical device material precursor and the dopant precursor are flowed simultaneously by simultaneously applying the first and second power levels to form the doped optical device film 101.

[0072] In one embodiment, which may be combined with other embodiments described herein, a single performance of operations 902 and 903 forms all of the series of zones 115 of the doped optical device film 101. In another embodiment, a single performance of operations 902 and 903 forms a portion of the doped optical device film 101, which portion may correspond to one or more of the series of zones 115. Operations 902 and 903 are repeated until a predetermined thickness 110 of the doped optical device film 101 is achieved. In one embodiment, which may be combined with other embodiments described herein, operations 902 and 903 may be performed in a CVD chamber 400 having at least first and second gas sources 402, 403. In another embodiment, which may be combined with other embodiments described herein, operations 902 and 903 may be performed in a multi-processing chamber 504 of a cluster tool 502. For example, the optical device substrate 102 is transferred between at least two processing chambers 504. At least one of the processing chambers 504 is a CVD chamber 400 that includes an optical device material target, and at least another of the processing chambers 504 is a CVD chamber 400 that includes a second gas source 403 .

[0073] In one embodiment, the doped optical device film 101 of methods 600-900 is maintained at a temperature within a range that allows the doped optical device film 101 to remain amorphous. In embodiments that may be combined with other embodiments described herein, the doped optical device film 101 is maintained in this temperature range throughout methods 600-900. In one embodiment, the optical device substrate 102 is maintained at a temperature greater than about 30° C., such as between about 30° C. and 300° C. In one embodiment, the temperature is maintained by cooling the substrate supports 310, 410 and the optical device substrate 102 using cooling conduits 318, 414. For example, a cooling fluid flows through the cooling conduit 318 disposed within the substrate support 310. In one embodiment, the temperature is maintained by heating the substrate supports 310, 410 and the optical device substrate 102 using the heater 322 or the heating conduit 414.

[0074] In the methods 600-900, the optical device material is exposed to a processing temperature of about 30° C. or higher. The dopant material incorporated into the optical device layer allows the doped optical device film 101 to be formed amorphously at temperatures above about 30° C., for example, at temperatures between about 100° C. and about 300° C. The optical device material having the dopant material is formed amorphous when the dopant material is incorporated into the optical device layer, where the dopant material changes the composition of the optical device material and disrupts the formation of crystalline structures in the optical device layer that would otherwise form above a certain temperature specific to the optical device material. For example, titanium dioxide (TiO2) may form polycrystalline titanium dioxide (TiO2) at temperatures between 30° C. and 200° C. or therebetween, and significant crystallinity may form at temperatures above 200° C.

[0075] In summary, improved methods and materials are described herein for forming a doped optical device film 101 having optical properties including a uniform high refractive index and low absorption losses. To achieve the desired optical properties, the dopant material is distributed in the optical device layer at a certain dopant concentration, and the doped optical device film is maintained within a temperature process window in which the doped optical device film can be formed amorphously (i.e., without forming a crystalline structure). The dopant material at the dopant concentration expands the temperature process window of the doped optical device film. The dopant material modifies the composition of the optical device layer such that crystal formation is discontinued at a predetermined temperature. For example, when the optical device layer has the dopant material distributed uniformly throughout, crystal formation is discontinued at a temperature between about 30° C. and 300° C. A concentration of 0-50% of dopant atoms of the dopant material affects the morphology of the doped optical device film without a significant deleterious increase in the refractive index of the optical device layer.

[0076] While the above description is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope of the disclosure, the scope of which is determined by the following claims.

Claims

1. 2. Disposing an optical device substrate on a substrate support, the substrate support being disposed within a chamber, the chamber comprising: an optical device material target disposed within the chamber, the optical device material target comprising an optical device material; and a dielectric target disposed within the chamber, the dielectric target including a dopant material; disposing an optical device substrate; depositing a doped optical film on the optical device substrate, the doped optical film having a series of zones extending vertically from a surface of the optical device substrate to an upper surface of the doped optical film; depositing the optical device material to form an optical device layer on a surface of the optical device substrate, the depositing comprising providing a first power level to the optical device material target to deposit the optical device material at a first deposition rate; and depositing the dopant material in the series of zones of the optical device layer to form the doped optical device film, the depositing of the dopant material including providing a second power level to the dielectric target to deposit the dopant material at a second deposition rate, the dopant material being distributed in each zone of the series of zones, and the first deposition rate and the second deposition rate being different, depositing the dopant material to form the doped optical device film. depositing a doped optical device film on the optical device substrate; A method comprising:

2. The method of claim 1 , further comprising maintaining the optical device substrate at a temperature greater than about 30° C. between the depositing of the optical device material and the depositing of the dopant material.

3. The method of claim 1 , further comprising oxidizing the surface of the optical device substrate.

4. The method of claim 1 , wherein the depositing of the optical device material and the depositing of the dopant material are performed sequentially.

5. 10. The method of claim 1, wherein said depositing said dopant material at said second power level is performed by pulsing said second power level at a set frequency while depositing said optical device material.

6. The optical device material is Titanium dioxide (TiO ２ ), tantalum pentoxide (Ta ２ O ５ ), zirconium dioxide (ZrO ２ ), indium oxide (In ２ O ３ ), or hafnium oxide (HfO ２ ), and Semiconductor materials, including silicon (Si), germanium (Ge), silicon germanium (SiGe), III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, and transparent conducting oxides One or both of the following are included: the dopant material comprises silicon (Si), aluminum (Al), niobium (Nb), titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), hafnium (Hf), or an oxide thereof, and the dopant material and the optical device material are different; The method of claim 1.

7. The method of claim 1 , wherein the doped optical device film comprises the dopant material at an atomic percentage dopant concentration of about 0% to 15%.

8. placing an optical device substrate in a chamber, the chamber including one or more targets each having a pre-doped optical device material, the pre-doped optical device material being: a first concentration of an optical device material; and A second concentration of dopant material disposing an optical device substrate; providing power to the target to deposit a doped optical film on the optical substrate, the doped optical film having a series of zones extending vertically from a surface of the optical substrate to an upper surface of the doped optical film, the dopant material being distributed in each of the series of zones; A method comprising:

9. The optical device material is Titanium dioxide (TiO ２ ), tantalum pentoxide (Ta ２ O ５ ), zirconium dioxide (ZrO ２ ), indium oxide (In ２ O ３ ), or hafnium oxide (HfO ２ ), and Semiconductor materials, including silicon (Si), germanium (Ge), silicon germanium (SiGe), III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, and transparent conducting oxides The method of claim 8, comprising one or both of the following:

10. placing an optical device substrate within the chamber; flowing an optical device material precursor into the chamber at a first flow rate to deposit an optical device layer on a surface of the optical device substrate; flowing a dopant precursor into the chamber at a second flow rate to form a doped optical device film on the optical device substrate, the doped optical device film having a series of zones extending vertically from a surface of the optical device substrate to an upper surface of the doped optical device film, the dopant precursor being distributed in each of the series of zones; A method comprising:

11. The method of claim 10 , wherein the flowing of the optical device material precursor into the chamber comprises introducing an oxygen-containing precursor into the chamber.

12. The method of claim 11 , wherein the optical device material precursor is a titanium precursor.

13. The dopant precursor is silane (SiH ４ 11. The method of claim 10,

14. The method of claim 10 , wherein the dopant precursor is deposited in the doped optical device film at an atomic percentage concentration of about 0% to 15%.

15. 2. Disposing an optical device substrate on a substrate support, the substrate support being disposed within a chamber, the chamber comprising: an optical device material target disposed within the chamber, the optical device material target comprising an optical device material; and a dielectric target disposed within the chamber, the dielectric target including a dopant material; disposing an optical device substrate; depositing a doped optical film on the optical device substrate, the doped optical film having a series of zones extending vertically from a surface of the optical device substrate to an upper surface of the doped optical film; depositing the optical device material to form an optical device layer on a surface of the optical device substrate, the depositing comprising providing a first power level to the optical device material target and providing an oxygen-containing gas to the chamber to deposit the optical device material at a first deposition rate; and depositing the dopant material in the series of zones of the optical device layer to form the doped optical device film, the depositing of the dopant material including providing a second power level to the dielectric target to deposit the dopant material at a second deposition rate, the dopant material being distributed in each zone of the series of zones, and the first deposition rate and the second deposition rate being different, depositing the dopant material to form the doped optical device film. depositing a doped optical device film on the optical device substrate; A method comprising:

16. 1. An optical device, comprising: a doped optical device film disposed over a surface of an optical device substrate, a series of zones extending vertically from a surface of the optical device substrate to an upper surface of the doped optical device film; an amorphous optical device material; a dopant material incorporated into the amorphous optical device material and distributed in each of the series of zones; A doped optical device film comprising: An optical device comprising:

17. the amorphous optical device material has a first refractive index; and the dopant material has a second refractive index, the first refractive index being greater than the second refractive index; 17. The optical device of claim 16.

18. The amorphous optical device material is Titanium dioxide (TiO ２ ), tantalum pentoxide (Ta ２ O ５ ), zirconium dioxide (ZrO ２ ), indium oxide (In ２ O ３ ), or hafnium oxide (HfO ２ ), and Semiconductor materials, including silicon (Si), germanium (Ge), silicon germanium (SiGe), III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, and transparent conducting oxides 20. The optical device of claim 17, comprising one or both of:

19. 20. The optical device of claim 17, wherein the dopant material comprises silicon (Si), aluminum (Al), niobium (Nb), titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), hafnium (Hf), or an oxide thereof, and the dopant material and the amorphous optical device material are different.

20. 17. The optical device of claim 16, wherein the dopant material has an atomic percentage concentration in the doped optical device film of about 0% to 15%.

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