Electronic component, radiation detector, radiation imaging system

Abstract

To provide a technique that can ensure both the strength of a thin semiconductor substrate and the reliability of the electrical connection between the semiconductor substrate and a package in an electronic component having the thin semiconductor substrate and a support member for ensuring the strength of the semiconductor substrate.SOLUTION: When perspectively viewed in a direction perpendicular to a main surface, a semiconductor substrate has a first region and a second region adjacent to the outside of the first region. The semiconductor substrate overlaps neither a first support member nor a second support member In the first region, and the semiconductor substrate overlaps both the first support member and the second support member in at least a part of the second region. When perspectively viewed in a direction perpendicular to the main surface, a first connection portion for electrically connecting the semiconductor substrate and the first support member and a second connection portion for electrically connecting the first support member and the second support member are provided outside the first region, and the first support member is an electronic component having a penetrating electrode for electrically connecting the first connection portion and the second connection portion.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to an electronic component, a radiation detector, and the like. [Background technology]

[0002] There is known a radiation detector that receives radiation with a semiconductor element such as a CMOS image sensor without passing through a scintillator (wavelength converter) to obtain a radiation image. In such a radiation detector, if radiation penetrates deep into the semiconductor element, crosstalk and secondary electrons are generated, reducing the detection accuracy, and therefore the semiconductor substrate is thinned. Thinning the semiconductor substrate, which is the base of the semiconductor element, reduces the mechanical strength of the semiconductor substrate.

[0003] Patent Document 1 discloses a detector in which the thickness of a semiconductor layer in at least a part of a detection region is smaller than the thickness of a peripheral region. It describes that in the detection region of the semiconductor layer, a plurality of grooves are provided on the back surface opposite to the surface on which the energy beam is incident, thereby reducing crosstalk between pixels. It also describes that strength is ensured by supporting a thin semiconductor layer with a thick peripheral region. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2019-87640 A Summary of the Invention [Problem to be solved by the invention]

[0005] A method is known in which a semiconductor element and a package, which is a container for mounting the semiconductor element, are electrically connected by wires and covered with a sealing resin. The semiconductor element, package, and sealing resin are made of different materials, and therefore have different linear expansion coefficients. For this reason, tension is applied to the wire joint due to temperature changes, which may reduce the reliability of the joint. However, Patent Document 1 does not specifically consider the reliability of the wire joint.

[0006] Therefore, for electronic components that include a thin semiconductor substrate and a support member for ensuring the strength of the semiconductor substrate, there is a need for technology that can ensure both the strength of the semiconductor substrate and the reliability of the electrical connection between the semiconductor substrate and the package. [Means for solving the problem]

[0007] One aspect of the present invention relates to an electronic component comprising a semiconductor substrate having a first main surface and a second main surface, a first support member having a third main surface and a fourth main surface, the first support member having a third main surface and a fourth main surface, the third main surface supporting at least a portion of the second main surface of the semiconductor substrate, and a second support member having a fifth main surface and a sixth main surface, the fifth main surface supporting at least a portion of the fourth main surface of the first support member, the second support member having a fifth main surface and a sixth main surface supporting at least a portion of the fifth main surface, the second support member having a fifth main surface and a sixth main surface supporting at least a portion of the fifth main surface, the second support member having a fifth main surface and a sixth main surface supporting at least a portion of the fifth main surface, the second support member having a sixth main surface and a fifth main surface supporting at least a portion of the fifth main surface supporting at least a portion of the fourth main surface of the first support member, the second support member having a sixth main surface and a fifth main surface supporting at least a portion of the ... supporting at least a portion of the fourth main surface of the first support member, the second support member having a sixth main surface and a fifth main surface supporting at least a portion of the fifth main surface supporting at least a portion of the fifth main surface supporting at least a portion of the fifth main surface supporting at least a portion of the fifth main surface supporting at least a portion of the fourth main surface of the first support member, the semiconductor substrate overlaps neither the first support member nor the second support member in at least a portion of the second region, the semiconductor substrate overlaps both the first support member and the second support member, a first connection portion electrically connecting the semiconductor substrate and the first support member and a second connection portion electrically connecting the first support member and the second support member are provided outside the first region, and the first support member has a through electrode electrically connecting the first connection portion and the second connection portion. Effect of the Invention

[0008] According to the present invention, in an electronic component including a thin semiconductor substrate and a support member for ensuring the strength of the semiconductor substrate, it is possible to provide a technology that ensures both the strength of the semiconductor substrate and the reliability of the electrical connection between the semiconductor substrate and a package. [Brief description of the drawings]

[0009] [Figure 1]1(a) is a schematic plan view of an example of an electronic component according to embodiment 1. (b) is a schematic cross-sectional view of the electronic component taken along line Aa in FIG. [Diagram 2] An enlarged cross-sectional view of the right-hand portion of FIG. 1(b). [Diagram 3] 3(a) is a plan view showing a portion of the third main surface 201 of the first support member 20 that is not covered with the adhesive layer 40A. (b) is a plan view showing a portion of the fourth main surface 202 of the first support member 20 opposite to that shown in FIG 3(a). (c) is a plan view showing a portion of the fifth main surface 301 of the second support member 30 that faces the fourth main surface 202 of FIG 3(b). [Figure 4] (a) A plan view showing a portion of the third main surface 201 of the first support member 20 of a modified example that is not covered with the adhesive layer 40A. (b) A plan view showing a portion of the fourth main surface 202 of the first support member 20 of a modified example opposite to that of Fig. 4(a). (c) A plan view showing a portion of the fifth main surface 301 of the second support member 30 that faces the fourth main surface 202 of Fig. 4(b). (d) A schematic perspective view seen from an oblique direction to explain the internal structure of the first support member of a modified example. [Diagram 5] 5(a) is a schematic plan view of an electronic component 100X according to a reference embodiment, and (b) is a schematic cross-sectional view of the electronic component 100X taken along line Aa in FIG. [Figure 6] 6(a) is a schematic plan view of an example of an electronic component according to embodiment 2. (b) is a schematic cross-sectional view taken along line Aa in FIG. [Figure 7] FIG. 7 is a partially enlarged cross-sectional view of the right-hand portion of FIG. 6(b). [Figure 8] 8(a) is a schematic plan view of an example of an electronic component according to embodiment 3. (b) is a schematic cross-sectional view taken along line Aa in FIG. 8(a). [Figure 9] FIG. 8(b) is a partially enlarged cross-sectional view of the right-hand side portion of FIG. 8(b). [Figure 10] FIG. 13 is a partially enlarged cross-sectional view of a right portion of a modified example of the third embodiment. [Figure 11] 13 is a diagram for explaining a radiation imaging apparatus according to a fourth embodiment and a radiation imaging system using the radiation imaging apparatus. [Figure 12] FIG. 13 is a diagram for explaining a transmission electron microscope system which is a radiation imaging system according to a fifth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] The following describes an embodiment of the present invention, such as an electronic component, with reference to the drawings. Note that the embodiment described below is merely an example, and those skilled in the art may appropriately modify the detailed configuration without departing from the spirit of the present invention.

[0011] In the drawings referred to in the following description of the embodiments, elements denoted by the same reference numerals have the same functions unless otherwise noted. When a plurality of identical elements are arranged in a drawing, the reference numerals and their descriptions may be omitted.

[0012] In addition, since the drawings may be expressed diagrammatically for convenience of illustration and explanation, the shapes, sizes, arrangements, etc. of elements shown in the drawings may not necessarily strictly correspond to the actual objects. Furthermore, the description of "XX or more and YY or less" or "XX to YY" expressing a numerical range means a numerical range including the endpoints XX (lower limit) and YY (upper limit) unless otherwise specified. When a numerical range is described in stages, the upper and lower limits of each numerical range can be arbitrarily combined.

[0013] In the following description, for example, the X-plus direction refers to the same direction as the X-axis arrow in the illustrated coordinate system, and the X-minus direction refers to the direction 180 degrees opposite to the direction of the X-axis arrow in the illustrated coordinate system. The same applies to directions other than X.

[0014] A radiation detector is exemplified as an electronic component according to the embodiment, and the radiation detected by the radiation detector may be electromagnetic waves or particle beams. The electromagnetic waves may be light beams such as infrared rays, visible light, and ultraviolet rays, radio waves such as microwaves, and ionizing radiation such as X-rays and gamma rays. The particle beams may include alpha rays, beta rays, electron beams, neutron beams, proton beams, heavy ion beams, and meson beams. The structure of the radiation detector, for example, the thickness of a semiconductor layer that converts radiation into an electrical signal, may be appropriately set according to the transmission characteristics and absorption characteristics of the radiation to be detected.

[0015] [Embodiment 1] An example of an electronic component according to a first embodiment will be described. Fig. 1(a) is a schematic diagram of an electronic component 100 according to an example of this embodiment in plan view, and Fig. 1(b) is a schematic diagram showing a cross section of the electronic component 100 taken along line Aa in Fig. 1(a). Fig. 2 is a partially enlarged cross-sectional view of the right-hand portion of Fig. 1(b) extracted and enlarged to show a more detailed structure. The electronic component 100 includes a semiconductor substrate 10, a first support member 20 that supports the semiconductor substrate 10, and a second support member 30 that supports the first support member 20.

[0016] The semiconductor substrate 10 has a first main surface 101 and a second main surface 102 on the opposite side. The semiconductor substrate 10 is disposed so that the first main surface 101 and the second main surface 102 are parallel to an XY plane defined by the X and Y directions. If the direction perpendicular to the first main surface 101 and the second main surface 102 is defined as the Z direction, the size of a typical semiconductor substrate 10 in the Z direction is smaller than the dimensions in the X and Y directions. That is, the semiconductor substrate 10 has a generally flat plate shape. In the following description, the dimension of a member in the Z direction may be expressed as "thickness" or "thickness".

[0017] The semiconductor substrate 10 is made of a single crystal layer or a polycrystalline layer of silicon, germanium, or the like, and has a first region and a second region. When the electronic component 100 is a radiation detector, the first region can be referred to as a detection region 1 and the second region as a peripheral region 2. Typically, the detection region 1 is located at the center of the semiconductor substrate 10 in a plan view, and the peripheral region 2 is disposed adjacent to the periphery of the detection region in a plan view. The first main surface 101 of the semiconductor substrate 10 is the main surface on the side where radiation is incident.

[0018] The detection region 1 is an area provided with a detection element (light receiving section) that converts electrons generated by the incidence of radiation into an output signal, and has a structure in which a plurality of pixels and a readout circuit for forming an image based on radiation are arranged in a matrix. Each of the plurality of pixels as the light receiving section may include a photodiode, similar to a CMOS image sensor or a CCD. As the photodiode, a compound semiconductor such as CdTe (cadmium telluride) or CdZnTe (cadmium zinc telluride) may be used. In addition, the photon counting principle may be used, and a device such as a SPAD (single photon avaranche diode) may be used.

[0019] Considering the balance between preventing crosstalk and ensuring mechanical strength, the thickness of the semiconductor substrate 10 in the detection region 1 is preferably 10 μm to 100 μm, more preferably 25 μm to 75 μm. Typically, it is set to 50 μm.

[0020] The peripheral region 2 is provided with peripheral circuits such as a driving circuit, a control circuit, a signal processing circuit, and an output circuit, as well as input terminals and output terminals. The driving circuit is a circuit that scans and drives the readout circuit of each pixel in the detection region 1. The control circuit is a circuit that controls the drive timing of the driving circuit, the signal processing circuit, and the like, and may include a timing generator. The signal processing circuit processes a signal read out from the readout circuit in the detection region 1, and may include an amplifier circuit and an AD conversion circuit. The output circuit converts a signal obtained by the signal processing circuit into a predetermined format and outputs it, and may include a differential transmission circuit. The input terminal is a terminal to which a power supply and a control signal are input from the outside, and the output terminal is a terminal to which a signal is output to the outside. The thickness of the semiconductor substrate 10 in the peripheral region 2 may be equal to that of the detection region 1, but may be greater than that of the detection region 1.

[0021] In the semiconductor substrate 10, at least a part of the peripheral region 2 of the second main surface 102, which is the main surface opposite to the side where radiation is incident, faces the first support member 20. The first support member 20 has an opening at least directly below the detection region 1. Furthermore, at least a part of the peripheral region 2 of the semiconductor substrate 10 faces at least a part of the second support member 30, with the first support member 20 in between. The second support member 30 has an opening at least directly below the detection region 1.

[0022] 1(b) for convenience of illustration, but as can be seen with reference to FIG. 2, in a region where the second main surface 102 of the semiconductor substrate 10 and the first support member 20 face each other, the second main surface 102 and the third main surface 201 of the first support member 20 are bonded by an adhesive layer 40A. Also, in a region where the first support member 20 and the second support member 30 face each other, the fourth main surface 202 of the first support member 20 and the fifth main surface 301 of the second support member 30 are bonded by an adhesive layer 40B.

[0023] An adhesive is used for the adhesive layers 40A and 40B, but in some cases, they may be bonded using DAF (die attach film), double-sided tape, etc. In the region where the members face each other, the entire facing area does not have to be bonded by the adhesive layers 40A and 40B, as long as at least a part is bonded.

[0024] The first support member 20 is disposed between the semiconductor substrate 10 and the second support member 30, and has a first function of ensuring the mechanical strength of the semiconductor substrate 10. And, a second function of the first support member 20 is to electrically connect the semiconductor substrate 10 and the second support member 30. In other words, the first support member 20 functions as an interposer (relay substrate) interposed between the semiconductor substrate 10 and the second support member 30.

[0025] Generally, the second support member 30 and the semiconductor substrate 10 are made of different materials. If the semiconductor substrate 10 and the second support member 30 are directly bonded without the first support member 20, thermal stress is applied due to the difference in linear expansion coefficient, and the thin semiconductor substrate 10 may be damaged. In this embodiment, the first support member 20 is interposed between the two, but if attention is paid only to mechanical strength, the first support member 20 may be any of a semiconductor, an insulator, and a conductor as long as it has sufficient rigidity to support the semiconductor substrate 10. However, in order to achieve both reducing the stress caused by the difference in linear expansion coefficient between the semiconductor substrate 10 and the first support member 20 and electrically connecting the semiconductor substrate 10 as an interposer, it is preferable that the material of the first support member 20 is the same type of semiconductor material as the semiconductor substrate 10. In other words, if the semiconductor substrate 10 is a silicon substrate, the first support member 20 is preferably silicon, and if the semiconductor substrate 10 is a germanium substrate, the first support member 20 is preferably germanium.

[0026] The thickness of the first support member 20 is preferably 100 μm or more, and more preferably 300 μm or more, in order to ensure mechanical strength. Typically, the thickness is set to 700 μm or more and 800 μm or less, which is the standard thickness of a general 8-inch wafer or 12-inch wafer. The first support member 20 can be easily manufactured by cutting it out from a wafer of the standard thickness.

[0027] 2, the semiconductor substrate 10 and the first support member 20 are electrically connected via wire 11 between a conductive layer 111 provided on a first main surface 101 of the semiconductor substrate 10 and a conductive layer 211 provided on a third main surface 201 of the first support member 20. The first support member 20 needs to be larger in the X direction and the Y direction than the semiconductor substrate 10 in a plan view in order to ensure at least an area for connecting the wire 11. The conductive layer 111 and the conductive layer 211 electrically connected via the wire 11 can be collectively referred to as a first connection portion.

[0028] The first support member 20 has a through electrode 220 that connects the conductive layer 211 provided on the third main surface 201 and the conductive layer 211 provided on the fourth main surface 202. The first support member 20 can be electrically connected to the second support member 30 via the conductive layer 211 provided on the fourth main surface 202. Therefore, the first support member 20 can electrically relay between the semiconductor substrate 10 and the second support member 30.

[0029] The second support member 30 is a board on which electric circuits that achieve various functions are mounted, and can also be considered a package that carries the semiconductor substrate 10 supported by the first support member 20. Specific functions of the electric circuit include supplying control signals and power to the radiation detection sensor provided on the semiconductor substrate 10, processing signals output from the semiconductor substrate 10, storing signals, transmitting signals to an external computer or network, etc.

[0030] The second support member 30 has an opening at a position directly below the detection region 1 of the semiconductor substrate 10. The second support member 30 can be formed by die molding, cutting, lamination of plate materials, or the like. The second support member 30 is preferably made of an insulator as a base material so that a signal line or a power line electrically connected to the first support member 20 can be provided. From the viewpoint of mechanical strength, it is preferable that the second support member 30 is a rigid substrate such as a glass epoxy substrate, a composite substrate, a glass composite substrate, a bakelite substrate, or a ceramic substrate, and among these, it is preferable to use a ceramic substrate or a glass epoxy substrate. When using ceramic, it is preferable to use a ceramic laminate. As the ceramic material, silicon carbide, aluminum nitride, sapphire, alumina, silicon nitride, cermet, yttria, mullite, forsterite, cordierite, zirconia, steatite, or the like can be used.

[0031] The second support member 30 has a conductive layer 311 on the fifth main surface 301, the sixth main surface 302 opposite to the fifth main surface, and inside the substrate. These conductive layers 311 can be connected to each other by a plurality of conductive members 312 (vias). In addition, the conductive layer 211 provided on the fourth main surface 202 of the first support member 20 and the conductive layer 311 provided on the fifth main surface of the second support member 30 are electrically connected via the conductive member 50B. The conductive layer 211 and the conductive layer 311 electrically connected by the conductive member 50B can be collectively referred to as a second connection portion.

[0032] In this manner, the semiconductor substrate 10 and the first support member 20 are electrically connected by the wire 11, and the first support member 20 and the second support member 30 are electrically connected by the conductive member 50B. That is, the semiconductor substrate 10 and the second support member 30 are electrically connected by the wire 11, the first support member 20, and the conductive member 50B.

[0033] 3(a) to 3(c) show examples of the structure of the portion responsible for electrical connection. Fig. 3(a) is a plan view showing a portion of the third main surface 201 of the first support member 20 that is not covered with the adhesive layer 40A. As shown in the figure, the conductive layer 211 (and possibly the through electrode 220) is exposed, and the wire 11 is connected to this portion as shown in Fig. 2.

[0034] Fig. 3(b) is a plan view (rear view) showing a portion of the fourth main surface 202 of the first support member 20 opposite to that shown in Fig. 3(a). As shown in the figure, the conductive layer 211 (and possibly the through electrode 220) is exposed, and the conductive member 50B is connected to this portion.

[0035] Fig. 3(c) is a plan view showing a portion of the fifth main surface 301 of the second support member 30 that faces the fourth main surface 202 of Fig. 3(b). As shown in the figure, the conductive layer 311 is exposed, and the conductive member 50B is connected to this portion.

[0036] 3(a) to 3(c), the third main surface 201 and the fourth main surface 202 of the first support member 20, and the fifth main surface 301 of the second support member 30 each have three locations for electrical connection in a plan view, and the locations are aligned along the Z direction. However, the structure of the locations for electrical connection is not limited to this example, and may be, for example, modified examples shown in FIGS. 4(a) to 4(d), or may have other structures.

[0037] FIG. 4(d) is a schematic perspective view seen from an oblique direction to explain the internal structure of the first support member 20, which is a relay substrate. FIG. 4(a) is a plan view showing a portion of the third main surface 201 of the first support member 20 that is not covered with the adhesive layer 40A, and FIG. 4(b) is a plan view (rear view) showing a portion of the fourth main surface 202 of the first support member 20 opposite to FIG. 4(a). FIG. 4(c) is a plan view showing a portion of the fifth main surface 301 of the second support member 30 that faces the fourth main surface 202 of FIG. 4(b). In this example, the conductive layer 211 of the third main surface 201 that is connected to the wire 11 is rectangular in plan view, which facilitates wire bonding. Furthermore, the pattern shape of the conductive layer 211 and the conductive layer 311, which are responsible for the electrical connection between the first support member 20 and the second support member 30, is enlarged in plan view compared to the previous example, and is distributed and arranged in the fourth main surface 202 and the fifth main surface 301. In the previous example, as shown in Figures 3(b) and 3(c), the conductive layer 211 and the conductive layer 311 were aligned along the Y direction in plan view, so that the pattern shape could not be made large. In contrast, in the example of Figures 4(b) and 4(c), the patterns are distributed and arranged in the XY plane to increase the interval, so that the pattern shape can be enlarged, thereby improving the reliability and certainty of the electrical connection.

[0038] 2, electronic component 100 can be electrically connected to an external circuit (not shown) via second support member 30. That is, electronic component 100 can be electrically connected to an external circuit using conductive layer 311 arranged on sixth main surface 302 and conductive layer 311 arranged on fifth main surface 301 that is not connected to first support member 20. Electrical connection to an external circuit using a signal line, a power line, or the like may be made only on the fifth main surface 301 side, only on the sixth main surface 302 side, or on both sides.

[0039] [Comparison with the reference form] For comparison with the above-mentioned embodiments, a reference embodiment will be described with reference to the drawings. Fig. 5(a) is a schematic diagram of an electronic component 100X of the reference embodiment in plan view, and Fig. 5(b) is a schematic diagram showing a cross section of the electronic component 100X taken along line Aa in Fig. 5(a). Descriptions of matters common to the embodiments will be simplified or omitted.

[0040] In the reference form, the first support member 20X is common to the embodiment in that it mechanically supports the semiconductor substrate 10, but the first support member 20X does not have an electrical relay function. That is, the first support member 20X does not function as an interposer having the conductive layer 211 and the through electrode 220 as in the embodiment, but functions only as a spacer having mechanical strength.

[0041] In the reference embodiment, the semiconductor substrate 10 and the second support member 30X are directly electrically connected by the wire 11. In general, when performing wire bonding, bonding is not possible if the axis of the wire is set at a right angle to the bonding surface, so bonding is required at a certain angle or more to the bonding surface. In the reference embodiment, when connecting the semiconductor substrate 10 and the second support member 30 with the wire 11, the wire 11 needs to be longer by the thickness of the first support member 20X, and the connection position on the second support member 30X side needs to be disposed on the outer periphery of the substrate, which is farther away from the X-positive side than in the embodiment. In general, since the semiconductor substrate 10 and the second support member 30X are made of different materials, the greater the separation between the connection positions of the wire in plan view, the greater the susceptibility to the influence of stress due to the difference in linear expansion coefficient, and the bonding reliability of the wire 11 tends to decrease.

[0042] If a detection region 1 of sufficient size is secured and a peripheral region 2 with a circuit size corresponding to that is provided, the size of the semiconductor substrate 10 in a plan view may be several tens of millimeters or more on one side. When the size (size in the XY directions) of the main surface in a plan view of the semiconductor substrate 10 becomes this large, the effect of stress due to the difference in the linear expansion coefficient between the semiconductor substrate 10 and the second support member 30X becomes large, making it difficult to ensure the bonding reliability of the wire 11.

[0043] In contrast, in this embodiment, the wire 11 electrically connects the semiconductor substrate 10 to the first support member 20, which is located closer to the substrate in the Z direction than the second support member 30. Therefore, the connection point of the wire 11 on the first support member 20 can be located closer to the substrate center in a plan view than in the reference embodiment, so that the effect of stress due to the difference in linear expansion coefficient is reduced. Furthermore, according to this embodiment, the base material of the first support member 20 to which the wire is connected can be made of the same material as the semiconductor substrate 10, and by doing so, the occurrence of stress due to the difference in linear expansion coefficient can be significantly reduced. In other words, by making the main component of the semiconductor substrate 10 and the main component of the first support member 20 the same material, the linear expansion coefficients of the semiconductor substrate 10 and the first support member 20 can be made substantially equal. Note that the main component refers to the component that is the largest in weight when there are multiple components (materials) that make up the substrate, and can be, for example, silicon. Furthermore, in this embodiment, the wiring length of the wire 11 can be shortened by the length of the first support member 20X compared to the reference embodiment, so that the wiring resistance can be reduced.

[0044] Thus, according to this embodiment, in an electronic component including a thin semiconductor substrate and a support member for ensuring the strength of the semiconductor substrate, it is possible to ensure both the strength of the semiconductor substrate and the reliability of the electrical connection between the semiconductor substrate and the package.

[0045] [Embodiment 2] An example of an electronic component according to embodiment 2 will be described. Fig. 6(a) is a schematic plan view of an electronic component 100A according to this embodiment, and Fig. 6(b) is a schematic cross-sectional view of the electronic component 100A taken along line Aa in Fig. 6(a). Fig. 7 is a partially enlarged cross-sectional view of the right-hand side portion of Fig. 6(b) in more detail. Descriptions of matters common to embodiment 1 will be simplified or omitted.

[0046] The electronic component 100A of this embodiment differs from the first embodiment in that the wire 11 electrically connecting the semiconductor substrate 10 and the first support member 20 is protected by being wrapped in resin 60. After bonding the wire 11, the resin 60 is formed to cover and encapsulate the wire 11 as shown in FIG. 7. If the wire 11 is exposed, for example, when attaching the electronic component to another part or device, or when handling the electronic component in various ways such as transporting the electronic component, an external object may come into contact with the wire 11, causing problems such as short circuits between the wires 11, peeling of the joint, or breakage. Therefore, in this embodiment, the resin 60 is provided to protect the wire 11 from the external environment.

[0047] Examples of materials for the resin 60 include epoxy resin, acrylic resin, silicone resin, and vinyl resin. An appropriate type of resin may be selected in consideration of the filling property and flowability of the resin, twisting of the wire, elastic modulus after hardening, etc. A dam material (not shown) may be provided to prevent the resin 60 from flowing into the detection region 1 of the semiconductor substrate 10.

[0048] The resin 60 may extend outside the outer peripheral end face of the first support member 20 or to the second support member 30, but in order to prevent adhesion to unnecessary locations, it is preferable that the resin 60 be contained inside the outer peripheral end face of the first support member 20 as long as it is able to cover the wire 11.

[0049] In addition, there may be other methods for protecting the wire 11 from the external environment than covering it with resin. For example, it is also possible to place a lid material on the top of the wire 11. For example, the second support member 30 is formed into a recessed shape with a recess in the center, and the semiconductor substrate 10 supported by the first support member 20 is mounted in the recess of the second support member 30. By appropriately setting the depth of the recess, it is possible to make the height of the peripheral part of the second support member 30 higher than the highest point of the wire. Then, by joining an appropriate lid member to the upper surface of the peripheral part of the second support member 30, it is possible to provide a eaves-like structure that protects the wire from the external environment. However, since the wire is not sealed, it is not sufficiently protected from heat and humidity, and in consideration of the fact that the number of parts increases and the external size of the electronic parts increases, a preferable aspect of the second embodiment is sealing the wire with resin.

[0050] Compared with the reference embodiment shown in FIG. 5(a) and FIG. 5(b), in the second embodiment, the wire 11 is electrically connected to the semiconductor substrate 10 between the first support member 20, which is closer to the second support member 30 in the Z direction. Therefore, the connection point of the wire 11 on the first support member 20 can be arranged closer to the center of the substrate in a plan view than in the reference embodiment, so that the influence of stress due to the difference in linear expansion coefficient is reduced. Furthermore, according to the present embodiment, the base material of the first support member 20 to which the wire is connected can be made of the same material as the semiconductor substrate 10, and in this case, the occurrence of stress due to the difference in linear expansion coefficient can be suppressed. In other words, by making the main component of the semiconductor substrate 10 and the main component of the first support member 20 the same material, the effective linear expansion coefficients of the semiconductor substrate 10 and the first support member 20 can be made equal. The main component is the component that is the largest in weight when there are multiple components (materials) that constitute the substrate, and is, for example, silicon. Furthermore, in this embodiment, the wiring length of the wire 11 can be shortened by the length of the first support member 20X compared to the reference embodiment, so that the wiring resistance can be reduced. Furthermore, in this embodiment, the wire is protected from the external environment, so that reliability in handling electronic components is improved.

[0051] Thus, according to this embodiment, in an electronic component including a thin semiconductor substrate and a support member for ensuring the strength of the semiconductor substrate, it is possible to ensure both the strength of the semiconductor substrate and the reliability of the electrical connection between the semiconductor substrate and the package.

[0052] [Embodiment 3] An example of an electronic component according to embodiment 3 will be described. Fig. 8(a) is a schematic plan view of an electronic component 100B according to this embodiment, and Fig. 8(b) is a schematic cross-sectional view of the electronic component 100B taken along line Aa in Fig. 8(a). Fig. 9 is a partially enlarged cross-sectional view of the right-hand side portion of Fig. 8(b) in more detail. Descriptions of matters common to embodiment 1 will be simplified or omitted.

[0053] As shown in FIG. 9, electronic component 100B of this embodiment differs from embodiments 1 and 2 in that semiconductor substrate 10B and first support member 20 are electrically connected together without using wires.

[0054] Inside the semiconductor substrate 10B, a transistor (not shown) and a conductive layer 111 present inside the semiconductor substrate 10B are connected through a via, and are further connected through a conductive member 112 (via) to the conductive layer 111 provided on the first main surface 101. Furthermore, the semiconductor substrate 10B has a through electrode 120 that connects the conductive layer 111 on the first main surface 101 and the conductive layer 111 provided on the second main surface 102. A conductive layer 211 provided on the third main surface 201 of the first support member 20 is provided at a position facing the conductive layer 111 provided on the second main surface 102, and the two are electrically connected via the conductive member 50A.

[0055] 9, there is only one conductive layer 111 inside the substrate, but the layer configuration is not limited to this, and it goes without saying that more conductive layers may be formed. Note that, similarly to the first embodiment, the second main surface 102 of the semiconductor substrate 10B and the third main surface 201 of the first support member 20 are bonded not only by the conductive member 50A but also by the adhesive layer 40A.

[0056] In this embodiment, the semiconductor substrate and the first support member are electrically connected without using wires, so that the reliability of the electrical connection is not reduced due to interference of external objects with the wires protruding from the semiconductor substrate. In addition, the wiring length can be shortened compared to the case of connection with wires, so that the wiring resistance can be reduced. In addition, since there is no need to provide a wire connection region in the first support member 20, the outer size of the first support member 20 can be made equal to or smaller than the outer size of the semiconductor substrate 10, and the size of the electronic components in a plan view can be reduced.

[0057] The configuration of the semiconductor substrate and the method of bonding the semiconductor substrate and the first support member in this embodiment are not limited to the example in FIG. 9, and may be, for example, a modified example shown in a partially enlarged cross-sectional view in FIG. 10. Inside the semiconductor substrate 10C, a transistor (not shown) and a conductive layer 111 present inside the semiconductor substrate 10B are connected through a conductive member 112 (via). This conductive layer 111 is further connected to a conductive layer 111 provided on the second main surface 102 through another conductive member 112 (via). Although the electronic component 100C shown in FIG. 10 has only one conductive layer 111 disposed inside the substrate, the layer configuration is not limited to this, and it goes without saying that more conductive layers may be formed.

[0058] The conductive layer 211 provided on the third main surface 201 of the first support member 20 is provided at a position facing the conductive layer 111 provided on the second main surface 102, and the two are directly bonded to form a joint. The conductive layer 111 and the conductive layer 211 can be made of Cu, for example, and can be bonded to each other by hybrid bonding of Cu. It is preferable that the bonding points between the conductive layer 111 and the conductive layer 211 are provided in large numbers or over a large area within the second main surface 102 and the third main surface 201. This is because the more bonding points there are or the larger the connection area, the more the mechanical and electrical bonding reliability can be improved.

[0059] 10, the wiring length can be made shorter than in the configuration shown in Fig. 9 in which wiring is routed via first main surface 101 and then to second main surface 102, and therefore wiring resistance can be suppressed. In addition, the connection points by hybrid bonding can serve as heat dissipation paths that efficiently dissipate heat generated when semiconductor substrate 10C is operated.

[0060] Compared with the electrical connection point from the semiconductor substrate to the second support member in the reference embodiment shown in FIG. 5(a) and FIG. 5(b), in the third embodiment, the electrical connection point from the semiconductor substrate to the first support member can be located closer to the center of the semiconductor substrate in a plan view. This can reduce the range in which thermal stress occurs due to the difference in linear expansion coefficient, thereby reducing the influence of thermal stress. Furthermore, according to this embodiment, the base material of the first support member 20 can be made of the same material as the semiconductor substrate 10B or the semiconductor substrate 10C, which can further suppress the occurrence of stress due to the difference in linear expansion coefficient. In other words, by making the main component of the semiconductor substrate 10B or the semiconductor substrate 10C and the main component of the first support member 20 of the same material, the effective linear expansion coefficients of the semiconductor substrate and the first support member 20 can be made equal. Note that the main component refers to the component that is the largest in weight when there are multiple components (materials) that constitute the substrate, and can be, for example, silicon. Furthermore, compared with the case of using a long wire for connection as in the reference embodiment, this embodiment can shorten the wiring length, thereby reducing the wiring resistance. Furthermore, in this embodiment, since there are no wires, the wires do not interfere with external objects, improving reliability when handling electronic components.

[0061] Thus, according to this embodiment, in an electronic component having a thin semiconductor substrate and a support member for ensuring the strength of the semiconductor substrate, it is possible to ensure both the strength of the semiconductor substrate and the reliability of the electrical connection between the semiconductor substrate and the package.

[0062] [Embodiment 4] With reference to FIG. 11, a radiation imaging device 801 incorporating a radiation detector (electronic component) according to any one of the above-mentioned first to third embodiments, and a radiation imaging system 800 using the radiation imaging device will be described.

[0063] The radiation imaging system 800 is configured to electrically capture an optical image formed by radiation and obtain an electrical radiation image (i.e., radiation image data). The radiation imaging system 800 includes, for example, a radiation imaging device 801, an exposure control unit 802, a radiation source 803, and a computer 804. The radiation imaging system 800 can display a captured radiation image on a display device (not shown) and transmit radiation image data to the outside via a communication device (not shown). The radiation imaging system 800 can be suitably used in fields such as medical image diagnosis and non-destructive testing.

[0064] A radiation source 803 for irradiating radiation starts irradiating radiation in accordance with an exposure command from an exposure control unit 802. The radiation emitted from the radiation source 803 passes through a subject (not shown) and is irradiated onto the radiation imaging device 801. The radiation source 803 stops irradiating radiation in accordance with a stop command from the exposure control unit 802.

[0065] Radiation imaging device 801 includes a radiation detector according to any one of the above-described embodiments 1 to 3, i.e., any one of electronic components 100 to 100C, and a control unit 805 for controlling the radiation detector. Radiation imaging device 801 further includes a signal processing unit 806 for processing a signal output from the radiation detector.

[0066] For example, when the signal output from the radiation detector is an analog signal, the signal processing unit 806 can perform A / D conversion of the signal and output it as radiation image data to the computer 804. Furthermore, the signal processing unit 806 may generate a stop signal for stopping the irradiation of radiation from the radiation source 803, based on the signal output from the radiation detector. The stop signal is supplied to the exposure control unit 802 via the computer 804, and the exposure control unit 802 sends a stop command to the radiation source 803 in response to the stop signal.

[0067] The control unit 805 can be configured, for example, by a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array), or an ASIC (Application Specific Integrated Circuit), or a general-purpose computer with a program embedded therein, or a combination of all or part of these.

[0068] Also, the signal processing unit 806 is illustrated as being disposed in the control unit 805 or as a part of the function of the control unit 805, but is not limited thereto. The control unit 805 and the signal processing unit 806 may be configured separately. Furthermore, the signal processing unit 806 may be disposed separately from the radiation imaging device 801. For example, the computer 804 may have the function of the signal processing unit 806. For this reason, the signal processing unit 806 may be included in the radiation imaging system 800 as a signal processing device that processes a signal output from the radiation imaging device 801.

[0069] The computer 804 can control the radiation imaging apparatus 801 and the exposure control unit 802, receive radiation image data from the radiation imaging apparatus 801, and perform processing for displaying the data as a radiation image. The computer 804 can also function as an input unit for a user to input conditions for capturing a radiation image.

[0070] As an example of the sequence, the exposure control unit 802 has an exposure switch, and when the exposure switch is turned on by a user, it sends an exposure command to the radiation source 803 and also sends a start notification indicating the start of radiation irradiation to the computer 804. In response to the start notification, the computer 804 notifies the control unit 805 of the radiation imaging device 801 of the start of radiation irradiation. In response to this, the control unit 805 causes a radiation detector (any of the electronic components 100 to 100C) to generate a signal corresponding to the incident radiation.

[0071] In the radiation imaging device of the present embodiment and the radiation imaging system using the radiation imaging device, even if the temperature of the radiation detector changes during imaging, the electrical connection between the semiconductor substrate and the member including the peripheral circuitry is not impaired due to imbalance in thermal contraction of each part. This makes it possible to realize a radiation imaging device that is highly reliable and durable and capable of obtaining high-quality radiation images, and can be used in a variety of fields including medical and industrial applications.

[0072] [Embodiment 5] 12, a transmission electron microscope (TEM) system will be taken as an example of a radiation imaging system incorporating a radiation detector (electronic component) according to any one of the above-mentioned embodiments 1 to 3. The device EQP as a transmission electron microscope has an electron beam source 1002 (electron gun), an irradiation lens 1004, a vacuum chamber 1001 (lens barrel), an objective lens 1006, a magnifying lens system 1007, and a radiation detector 1100. The radiation detector 1100 is any one of the above-mentioned electronic components 100 to 100C.

[0073] An electron beam 1003, which is radiation emitted from an electron beam source 1002 (electron gun) as a radiation source, is focused by an irradiation lens 1004 and irradiated onto a sample S as an analysis target held in a sample holder. The space through which the electron beam 1003 passes is defined by a vacuum chamber 1001 (column) provided in the device EQP, and this space is maintained in a vacuum.

[0074] The electron beam 1003 that has passed through the sample S is magnified by the objective lens 1006 and the magnifying lens system 1007, and is imaged on the light receiving surface of the radiation detector 1100. An electron optical system for irradiating the sample S with the electron beam is called an irradiation optical system, and an electron optical system for imaging the electron beam that has passed through the sample S on the light receiving surface of the radiation detector 1100 is called an imaging optical system.

[0075] The electron beam source 1002 is controlled by an electron beam source controller 1011. The illumination lens 1004 is controlled by an illumination lens controller 1012. The objective lens 1006 is controlled by an objective lens controller 1013. The magnifying lens system 1007 is controlled by a magnifying lens system controller 1014. The sample holder control mechanism 1005 is controlled by a holder controller 1015 that controls a drive mechanism for the sample holder.

[0076] The electron beam 1003 transmitted through the sample S is detected by a radiation detector 1100. An output signal from the radiation detector 1100 is processed by a signal processing device 1016 and an image processing device 1018 to generate an image signal. The generated image signal (transmitted electron image) is displayed on an image display monitor 1020 and an analysis monitor 1021 as display devices.

[0077] The electron beam source control device 1011, the projection lens control device 1012, the objective lens control device 1013, the magnifying lens system control device 1014, and the holder control device 1015 are each connected to an image processing device 1018. This allows data to be exchanged between them in order to set the imaging conditions of the electron microscope. Signals from the image processing device 1018 can be used to control the drive of the sample holder and set the observation conditions for each lens.

[0078] The operator prepares a sample S to be photographed, and sets the photographing conditions using an input device 1019 connected to the image processing device 1018. Predetermined data is input to the electron beam source control device 1011, the irradiation lens control device 1012, the objective lens control device 1013, and the magnifying lens system control device 1014, respectively, so that the desired acceleration voltage, magnification, and observation mode are obtained. The operator also inputs conditions such as the number of continuous field images, the photographing start position, and the moving speed of the sample holder into the image processing device 1018 using the input device 1019 such as a mouse, keyboard, or touch panel. The image processing device 1018 may automatically set the conditions without depending on the operator's input.

[0079] The electron microscope according to the embodiment is not limited to the exemplified transmission electron microscope (TEM), but may be, for example, a scanning electron microscope (SEM) or a scanning transmission electron microscope (STEM).Furthermore, it may be, for example, an electron microscope equipped with a processing function such as ion beam milling or ion beam induced deposition (IBID), or a dual beam electron microscope equipped with a focused ion beam (FIB) such as a FIB-SEM.

[0080] In the electron microscope according to this embodiment, even if the temperature of the radiation detector changes during imaging, the electrical connection between the semiconductor substrate and the member including the peripheral circuitry is not impaired by imbalance in thermal contraction of each part. This makes it possible to realize a radiation imaging device that is highly reliable and durable and capable of obtaining high-quality radiation images, and can be used in a variety of fields including medical and industrial applications.

[0081] [Other embodiments] The present invention is not limited to the above-described embodiment, and many modifications are possible within the technical spirit of the present invention. For example, the above-described different embodiments may be combined in whole or in part.

[0082] For example, in the above embodiment, the first support member and the second support member are electrically connected via the conductive member 50B, but this is not limiting. For example, the conductive layer 211 of the first support member and the conductive layer 311 of the second support member may be formed of Cu, and the two may be directly joined by hybrid bonding of Cu to form a joint.

[0083] In the illustrated embodiment, the inner (detection region side) side of the first support member and the inner (detection region side) side of the second support member are configured to be arranged on the same plane, but they do not necessarily have to be arranged on the same plane. When viewed from a direction perpendicular to the main surface of the semiconductor substrate, it is sufficient that neither the first support member nor the second support member overlaps with the detection region, and for example, the detection region side side of the first support member and the detection region side side of the second support member may form a discontinuous step. It is sufficient that at least a part of the third main surface of the first support member supports at least a part of the second main surface of the semiconductor substrate, and at least a part of the fifth main surface of the second support member supports at least a part of the fourth main surface of the first support member.

[0084] Furthermore, the electronic component according to the embodiment is not limited to a radiation detector, and the present invention can be implemented as long as the electronic component is a device in which a thin semiconductor substrate is supported by a support substrate and the semiconductor substrate and the support substrate are electrically connected. The semiconductor substrate thinned to a thickness of 100 μm or less is not limited to a substrate having a radiation detection element, and may be a semiconductor substrate used for various purposes such as signal processing and high-speed calculation. According to the present invention, in various electronic components having a thin semiconductor substrate and a support member for ensuring the strength of the semiconductor substrate, it is possible to ensure both the strength of the semiconductor substrate and the reliability of the electrical connection between the semiconductor substrate and the package.

[0085] This specification discloses at least the following: [Matter 1] a semiconductor substrate having a first main surface and a second main surface; a first support member having a third main surface and a fourth main surface, the first support member supporting at least a portion of the second main surface of the semiconductor substrate by at least a portion of the third main surface; a second support member having a fifth main surface and a sixth main surface, the fifth main surface supporting at least a portion of the fourth main surface of the first support member, When the electronic component is seen through in a direction perpendicular to the first main surface, the semiconductor substrate has a first region and a second region adjacent to the outside of the first region; In the first region, the semiconductor substrate does not overlap either the first support member or the second support member, In at least a portion of the second region, the semiconductor substrate overlaps both the first support member and the second support member; a first connection portion electrically connecting the semiconductor substrate and the first support member and a second connection portion electrically connecting the first support member and the second support member are provided outside the first region; The first support member includes a through electrode that electrically connects the first connection portion and the second connection portion. An electronic component characterized by: [Matter 2] The thickness of the first region of the semiconductor substrate is 100 μm or less. 2. The electronic component according to item 1, [Matter 3] The first support member has a thickness of 100 μm or more. 3. The electronic component according to item 1 or 2. [Matter 4] the first connection portion includes a wire connecting a conductive layer provided on the first main surface of the semiconductor substrate and a conductive layer provided on the third main surface of the first support member; 4. The electronic component according to any one of items 1 to 3. [Matter 5] The wire is covered with a resin. 5. The electronic component according to item 4. [Matter 6] the first connection portion includes a conductive member that connects a conductive layer provided on the second main surface of the semiconductor substrate and a conductive layer provided on the third main surface of the first support member; 4. The electronic component according to any one of items 1 to 3. [Matter 7] the first connection portion includes a joint portion in which a conductive layer provided on the second main surface of the semiconductor substrate and a conductive layer provided on the third main surface of the first support member are directly joined to each other; 4. The electronic component according to any one of items 1 to 3. [Matter 8] the second connection portion includes a conductive member that connects a conductive layer provided on the fourth main surface of the first support member and a conductive layer provided on the fifth main surface of the second support member. 8. An electronic component according to any one of items 1 to 7. [Matter 9] the second connection portion includes a joint portion in which a conductive layer provided on the fourth main surface of the first support member and a conductive layer provided on the fifth main surface of the second support member are directly joined to each other, 8. An electronic component according to any one of items 1 to 7. [Matter 10] A main component of the semiconductor substrate and a main component of the first support member are the same material, and a main component of the semiconductor substrate and a main component of the second support member are different materials. 10. An electronic component according to any one of items 1 to 9. [Matter 11] The electronic device according to any one of claims 1 to 10, the semiconductor substrate has a light receiving portion that receives radiation in the first region; A radiation detector comprising: [Matter 12] the semiconductor substrate has a signal processing circuit around the light receiving portion; 12. The radiation detector according to item 11, [Matter 13] A radiation detector according to item 11 or 12, A signal processing unit that processes a signal output by the radiation detector. A radiation imaging system comprising: [Matter 14] A radiation detector according to item 11 or 12, a radiation source; A radiation imaging system comprising: [Explanation of symbols]

[0086] 1···detection region / 2···peripheral region / 10, 10B, 10C··semiconductor substrate / 11···wire / 20···first support member / 30···second support member / 40A, 40B···adhesive layer / 50A, 50B···conductive member / 60···resin / 100, 100A, 100B, 100C···electronic component / 101···first main surface / 102···second main surface / 111··conductive layer / 112···conductive member / 201···third main surface / 202··fourth main surface· / 211··conductive layer / 220···through electrode / 301··fifth main surface / 302···sixth main surface / 311··conductive layer / 312··conductive member

Claims

1. a semiconductor substrate having a first main surface and a second main surface; a first support member having a third main surface and a fourth main surface, the first support member supporting at least a portion of the second main surface of the semiconductor substrate by at least a portion of the third main surface; a second support member having a fifth main surface and a sixth main surface, the fifth main surface supporting at least a portion of the fourth main surface of the first support member, When the electronic component is seen through in a direction perpendicular to the first main surface, the semiconductor substrate has a first region and a second region adjacent to the outside of the first region; In the first region, the semiconductor substrate does not overlap either the first support member or the second support member, In at least a portion of the second region, the semiconductor substrate overlaps both the first support member and the second support member; a first connection portion electrically connecting the semiconductor substrate and the first support member and a second connection portion electrically connecting the first support member and the second support member are provided outside the first region; The first support member includes a through electrode that electrically connects the first connection portion and the second connection portion. An electronic component characterized by:

2. The thickness of the first region of the semiconductor substrate is 100 μm or less.

2. The electronic component according to claim 1 .

3. The first support member has a thickness of 100 μm or more.

2. The electronic component according to claim 1 .

4. the first connection portion includes a wire connecting a conductive layer provided on the first main surface of the semiconductor substrate and a conductive layer provided on the third main surface of the first support member; 4. The electronic component according to claim 1, wherein the first insulating layer is a conductive layer.

5. The wire is covered with a resin.

5. The electronic component according to claim 4.

6. the first connection portion includes a conductive member that connects a conductive layer provided on the second main surface of the semiconductor substrate and a conductive layer provided on the third main surface of the first support member; 4. The electronic component according to claim 1, wherein the first insulating layer is a conductive layer.

7. the first connection portion includes a joint portion in which a conductive layer provided on the second main surface of the semiconductor substrate and a conductive layer provided on the third main surface of the first support member are directly joined to each other; 4. The electronic component according to claim 1, wherein the first and second electrodes are electrically connected to each other.

8. the second connection portion includes a conductive member that connects a conductive layer provided on the fourth main surface of the first support member and a conductive layer provided on the fifth main surface of the second support member.

4. The electronic component according to claim 1, wherein the first and second electrodes are electrically connected to each other.

9. the second connection portion includes a joint portion in which a conductive layer provided on the fourth main surface of the first support member and a conductive layer provided on the fifth main surface of the second support member are directly joined to each other, 4. The electronic component according to claim 1, wherein the first and second electrodes are electrically connected to each other.

10. The main component of the semiconductor substrate and the main component of the first support member are the same material, and the main components of the semiconductor substrate and the second support member are different from each other.

4. The electronic component according to claim 1, wherein the first and second electrodes are electrically connected to each other.

11. The electronic component according to any one of claims 1 to 3, the semiconductor substrate has a light receiving portion that receives radiation in the first region; A radiation detector comprising:

12. The semiconductor substrate has a signal processing circuit around the light receiving portion. The radiation detector according to claim 11 .

13. The radiation detector according to claim 11 ; A signal processing unit that processes a signal output by the radiation detector. A radiation imaging system comprising:

14. The radiation detector according to claim 11 ; a radiation source; A radiation imaging system comprising:

Images