Light detection device, optical element and electronic equipment
By using spherical or elliptical structures in the light detection equipment and filling members with different refractive indices, the shortcomings of existing equipment in the optical performance improvement are solved, and more efficient photoelectric conversion and light guidance effects are achieved.
Patent Information
- Application Number
- JP2023118666
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2023-07-20
- Publication Date
- 2025-01-30
AI Technical Summary
The existing light detection equipment has shortcomings in improving the light incident characteristics and diagonal light emission characteristics, and it is difficult to effectively improve the optical performance.
A first structure adopts a spherical or elliptical structure, with filler members and light control members with different refractive indices around it, combined with a photoelectric conversion element, constitutes a light detection device, and effectively guides light to the photoelectric conversion element through the light guide part.
The characteristics of the light detection equipment to incident and diagonal light emitted by the light detection equipment are improved, and the photoelectric conversion efficiency and optical performance are enhanced.
Smart Images

Figure 2025015331000001_ABST
Abstract
Description
[Technical field]
[0001] The present disclosure relates to a light detection device, an optical element, and an electronic device. [Background technology]
[0002] A meta-optical element has been proposed that includes a plurality of cylindrical nanostructures and a surrounding substance having a refractive index different from that of the nanostructures (Patent Document 1). [Prior art documents] [Patent documents]
[0003] [Patent Document 1] JP 2021-140152 A Summary of the Invention [Problem to be solved by the invention]
[0004] In a light detecting device, it is desirable to improve the characteristics for obliquely incident light.
[0005] It is desirable to provide a photodetector capable of improving characteristics for obliquely incident light. [Means for solving the problem]
[0006] An optical detection device according to one embodiment of the present disclosure includes a first structure having a spherical or ellipsoidal shape, a first light-guiding member including a filling member disposed around the first structure and having a refractive index different from that of the first structure, and a first photoelectric conversion element that performs photoelectric conversion on light incident through the first light-guiding member. An optical element according to one embodiment of the present disclosure comprises a plurality of first structures having a spherical or ellipsoidal shape, and a filling member disposed between adjacent first structures and having a refractive index different from the refractive index of the first structures. According to an embodiment of the present disclosure, an electronic device includes an optical system and a light detection device that receives light transmitted through the optical system. The light detection device includes a first structure having a spherical or ellipsoidal shape, a first light guide member including a filling member provided around the first structure and having a refractive index different from that of the first structure, and a first photoelectric conversion element that photoelectrically converts light incident through the first light guide member. [Brief description of the drawings]
[0007] [Figure 1] FIG. 1 is a block diagram showing an example of a schematic configuration of an imaging device which is an example of a light detection device according to a first embodiment of the present disclosure. [Diagram 2] FIG. 2 is a diagram illustrating an example of a pixel unit of the imaging device according to the first embodiment of the present disclosure. [Diagram 3] FIG. 3 is a diagram for explaining an example of a circuit configuration of a pixel of the imaging device according to the first embodiment of the present disclosure. [Figure 4] FIG. 4 is a diagram illustrating an example of a planar configuration of the imaging device according to the first embodiment of the present disclosure. [Diagram 5] FIG. 5 is a diagram illustrating an example of a planar configuration of the imaging device according to the first embodiment of the present disclosure. [Figure 6] FIG. 6 is a diagram illustrating an example of a cross-sectional configuration of the imaging device according to the first embodiment of the present disclosure. [Figure 7] FIG. 7 is a diagram illustrating another example of the cross-sectional configuration of the imaging device according to the first embodiment of the present disclosure. [Figure 8] FIG. 8 is a diagram illustrating another example of the cross-sectional configuration of the imaging device according to the first embodiment of the present disclosure. [Figure 9A] FIG. 9A is a diagram illustrating an example of a cross-sectional configuration at different image height positions of the imaging device according to the first embodiment of the present disclosure. [Figure 9B] FIG. 9B is a diagram illustrating an example of a cross-sectional configuration at a position of a different image height of the imaging device according to the first embodiment of the present disclosure. [Figure 10A] FIG. 10A is a diagram for explaining a configuration example of an imaging device according to the first embodiment of the present disclosure. [Figure 10B] FIG. 10B is a diagram for explaining a configuration example of the imaging device according to the first embodiment of the present disclosure. [Figure 10C] FIG. 10C is a diagram for explaining a configuration example of the imaging device according to the first embodiment of the present disclosure. [Figure 11A] FIG. 11A is a diagram for explaining an example of a method for manufacturing a light guiding section of an imaging device according to the first embodiment of the present disclosure. [Figure 11B] FIG. 11B is a diagram for explaining an example of a method for manufacturing the light guiding section of the imaging device according to the first embodiment of the present disclosure. [Figure 11C] FIG. 11C is a diagram for explaining an example of a method for manufacturing a light guiding section of an imaging device according to the first embodiment of the present disclosure. [Figure 11D] FIG. 11D is a diagram for explaining an example of a method for manufacturing a light guiding section of the imaging device according to the first embodiment of the present disclosure. [Figure 11E] FIG. 11E is a diagram for explaining an example of a method for manufacturing a light guiding section of the imaging device according to the first embodiment of the present disclosure. [Figure 11F] FIG. 11F is a diagram for explaining an example of a method for manufacturing a light guiding section of an imaging device according to the first embodiment of the present disclosure. [Figure 11G] FIG. 11G is a diagram for explaining an example of a method for manufacturing a light guiding section of an imaging device according to the first embodiment of the present disclosure. [Figure 11H] FIG. 11H is a diagram for explaining an example of a method for manufacturing a light guiding section of an imaging device according to the first embodiment of the present disclosure. [Figure 11I] FIG. 11I is a diagram for explaining an example of a method for manufacturing a light guiding section of the imaging device according to the first embodiment of the present disclosure. [Figure 11J] FIG. 11J is a diagram for explaining an example of a method for manufacturing a light guiding section of the imaging device according to the first embodiment of the present disclosure. [Figure 12A] FIG. 12A is a diagram for explaining a configuration example of an imaging device according to Modification 1 of the present disclosure. [Figure 12B]FIG. 12B is a diagram for explaining a configuration example of the imaging device according to the first modification of the present disclosure. [Figure 13A] FIG. 13A is a diagram for explaining another configuration example of the imaging device according to the first modification of the present disclosure. [Figure 13B] FIG. 13B is a diagram for explaining another configuration example of the imaging device according to the first modification of the present disclosure. [Figure 14] FIG. 14 is a diagram for explaining a configuration example of an imaging device according to the second modification of the present disclosure. [Figure 15A] FIG. 15A is a diagram for explaining a configuration example of an imaging device according to Modification 3 of the present disclosure. [Figure 15B] FIG. 15B is a diagram for explaining a configuration example of an imaging device according to Modification 3 of the present disclosure. [Figure 16A] FIG. 16A is a diagram for explaining a configuration example of an imaging device according to Modification 4 of the present disclosure. [Figure 16B] FIG. 16B is a diagram for explaining a configuration example of an imaging device according to Modification 4 of the present disclosure. [Figure 17A] FIG. 17A is a diagram for explaining another configuration example of an imaging device according to the fourth modification of the present disclosure. [Figure 17B] FIG. 17B is a diagram for explaining another configuration example of the imaging device according to the fourth modification of the present disclosure. [Figure 18A] FIG. 18A is a diagram for explaining a configuration example of an imaging device according to Modification 5 of the present disclosure. [Figure 18B] FIG. 18B is a diagram for explaining a configuration example of an imaging device according to Modification 5 of the present disclosure. [Figure 18C] FIG. 18C is a diagram for explaining a configuration example of an imaging device according to Modification 5 of the present disclosure. [Figure 18D] FIG. 18D is a diagram for explaining a configuration example of an imaging device according to Modification 5 of the present disclosure. [Figure 19] FIG. 19 is a diagram illustrating an example of a planar configuration of an imaging device according to the second embodiment of the present disclosure. [Figure 20]FIG. 20 is a diagram illustrating an example of a cross-sectional configuration of an imaging device according to the second embodiment of the present disclosure. [Figure 21] FIG. 21 is a diagram for explaining a configuration example of an imaging device according to the second embodiment of the present disclosure. [Figure 22] FIG. 22 is a diagram for explaining a configuration example of an imaging device according to the seventh modification of the present disclosure. [Figure 23] FIG. 23 is a diagram for explaining a configuration example of an imaging device according to Modification 8 of the present disclosure. [Figure 24A] FIG. 24A is a diagram for explaining a configuration example of an imaging device according to Modification 9 of the present disclosure. [Figure 24B] FIG. 24B is a diagram for explaining a configuration example of an imaging device according to Modification 9 of the present disclosure. [Figure 25A] FIG. 25A is a diagram for explaining a configuration example of an imaging device according to a tenth modification of the present disclosure. [Figure 25B] FIG. 25B is a diagram for explaining a configuration example of an imaging device according to Modification 10 of the present disclosure. [Figure 26A] FIG. 26A is a diagram for explaining another exemplary configuration of an imaging device according to the tenth modification of the present disclosure. [Figure 26B] FIG. 26B is a diagram for explaining another configuration example of the imaging device according to the tenth modification of the present disclosure. [Figure 27] FIG. 27 is a diagram for explaining a configuration example of an imaging device according to the eleventh modification of the present disclosure. [Figure 28] FIG. 28 is a diagram for explaining a configuration example of an imaging device according to the twelfth modification of the present disclosure. [Figure 29] FIG. 29 is a diagram for explaining a configuration example of an optical element according to a third embodiment of the present disclosure. [Diagram 30] FIG. 30 is a diagram illustrating a configuration example of an optical element according to the third embodiment of the present disclosure. [Diagram 31] FIG. 31 is a block diagram illustrating an example of the configuration of an electronic device having an imaging device. [Diagram 32]FIG. 32 is a block diagram showing an example of a schematic configuration of a vehicle control system. [Diagram 33] FIG. 33 is an explanatory diagram showing an example of the installation positions of the vehicle outside information detection unit and the imaging unit. [Diagram 34] FIG. 34 is a diagram showing an example of a schematic configuration of an endoscopic surgery system. [Diagram 35] FIG. 35 is a block diagram showing an example of a functional configuration of the camera head and the CCU. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0008] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The description will be made in the following order. 1. First embodiment 2. Second embodiment 3. Third embodiment 4. Application Examples 5. Application Examples
[0009] <1. First embodiment> Fig. 1 is a block diagram showing an example of a schematic configuration of an imaging device which is an example of a light detection device according to a first embodiment of the present disclosure. Fig. 2 is a diagram showing an example of a pixel unit of the imaging device according to the first embodiment. The light detection device is a device capable of detecting incident light. The imaging device 1 which is a light detection device has a plurality of pixels P each having a photoelectric conversion unit (photoelectric conversion element), and is configured to perform photoelectric conversion on the incident light to generate a signal.
[0010] The imaging device 1 can generate a signal by receiving light transmitted through an optical system (not shown) including an optical lens. The imaging device 1 is configured, for example, using a semiconductor substrate (e.g., a silicon substrate) on which a plurality of pixels P are provided. The photoelectric conversion unit of each pixel P of the imaging device 1 is, for example, a photodiode (PD) and configured to be capable of photoelectrically converting light.
[0011] 1 and 2, the imaging device 1 has, as an imaging area, a region (pixel section 100) in which a plurality of pixels P are two-dimensionally arranged in a matrix. The pixel section 100 of the imaging device 1 is a pixel array in which a plurality of pixels P are arranged, and can also be called a light receiving region. The photoelectric conversion section of each pixel P can also be called a photoelectric conversion region.
[0012] The imaging device 1 captures incident light (image light) from a subject to be measured via an optical system including an optical lens. The imaging device 1 captures an image of the subject formed by the optical lens. The imaging device 1 can generate pixel signals by photoelectrically converting the received light (e.g., visible light, infrared light, etc.). The imaging device 1, which is a light detection device, is a device that can receive incident light and generate a signal, and can also be called a light receiving device.
[0013] The imaging device 1 (photodetection device) may be configured as an image sensor, for example. The imaging device 1 may be, for example, a complementary metal oxide semiconductor (CMOS) image sensor. The imaging device 1 may have a structure (layered structure) formed by stacking a plurality of semiconductor layers. The imaging device 1 may be used in various electronic devices such as digital still cameras, video cameras, and mobile phones.
[0014] As shown in Fig. 2, the incident direction of light from the subject is the Z-axis direction, the left-right direction on the paper perpendicular to the Z-axis direction is the X-axis direction, and the up-down direction on the paper perpendicular to the Z-axis and X-axis directions is the Y-axis direction. In the following figures, directions may be indicated based on the direction of the arrow in Fig. 2.
[0015] [Schematic configuration of the imaging device] 1, the imaging device 1 includes a pixel unit 100, a pixel control unit 111, a signal processing unit 112, a control unit 113, and a processing unit 114. The imaging device 1 is also provided with, for example, a plurality of control lines Lread and a plurality of signal lines VSL. The control line Lread is a signal line capable of transmitting a signal for controlling the pixel P, and is connected to the pixel control unit 111 and the pixel P of the pixel unit 100.
[0016] 1, in the pixel section 100, a plurality of control lines Lread are wired for each pixel row composed of a plurality of pixels P arranged in the horizontal direction (row direction). The control lines Lread are configured to transmit control signals for reading out signals from the pixels P. The control lines Lread can also be considered as drive lines (pixel drive lines) that transmit signals for driving the pixels P.
[0017] The signal line VSL is a signal line capable of transmitting a signal from the pixel P, and is connected to the pixel P of the pixel unit 100 and the signal processing unit 112. In the pixel unit 100, for example, one or more signal lines VSL are wired for each pixel column composed of a plurality of pixels P arranged in the vertical direction (column direction).
[0018] The signal line VSL is configured to be capable of transmitting a signal output from the pixel P. In the imaging device 1, a plurality of signal lines VSL may be provided for one pixel column. The imaging device 1 may have a plurality of signal lines VSL for each pixel column.
[0019] The pixel control unit 111 is configured to be able to control each pixel P of the pixel unit 100. The pixel control unit 111 is a control circuit and is configured by a plurality of circuits including, for example, a buffer, a shift register, an address decoder, etc. The pixel control unit 111 generates a signal for controlling the pixel P and outputs the signal to each pixel P of the pixel unit 100 via a control line Lread. The pixel control unit 111 is controlled by the control unit 113 and controls the pixel P of the pixel unit 100.
[0020] The pixel control unit 111 generates signals for controlling the pixels P, such as a signal for controlling the transfer transistor of the pixel P, a signal for controlling the selection transistor, and a signal for controlling the reset transistor, and supplies the signals to each pixel P via a control line Lread. The pixel control unit 111 can control reading out pixel signals from each pixel P. The pixel control unit 111 can also be called a pixel driving unit configured to be able to drive each pixel P. The pixel control unit 111 and the control unit 113 can also be called a pixel control unit together.
[0021] The signal processing unit 112 is configured to be able to execute signal processing of the input pixel signal. The signal processing unit 112 is a signal processing circuit, and has, for example, a load circuit, an AD (Analog Digital) conversion circuit, a horizontal selection switch, etc. As an example, the load circuit is configured by a current source capable of supplying a current to the amplification transistor of the pixel P. The load circuit, together with the amplification transistor of the pixel P, configures, for example, a source follower circuit.
[0022] The signal processing unit 112 may have an amplifier circuit configured to amplify a signal read from the pixel P via the signal line VSL. The load circuit, the amplifier circuit, the AD conversion circuit, etc. are provided for each of the multiple signal lines VSL, for example. A load circuit, an amplifier circuit, an AD conversion circuit, etc. may be provided for each pixel column of the pixel unit 100.
[0023] A signal output from each pixel P selected and scanned by the pixel control unit 111 is input to a signal processing unit 112 via a signal line VSL. The signal processing unit 112 can perform signal processing such as AD conversion of the signal of the pixel P and CDS (Correlated Double Sampling). The signal of each pixel P transmitted through each signal line VSL is subjected to signal processing by the signal processing unit 112 and output to a processing unit 114.
[0024] The processing unit 114 is configured to be able to perform signal processing on the input signal. The processing unit 114 is a processing circuit, and is configured, for example, by a circuit that performs various types of signal processing on pixel signals. The processing unit 114 may include a processor and a memory. The processing unit 114 performs signal processing on pixel signals input from the signal processing unit 112, and outputs the processed pixel signals. The processing unit 114 can perform various types of signal processing, for example, noise reduction processing, tone correction processing, etc.
[0025] The control unit 113 is configured to be able to control each unit of the imaging device 1. The control unit 113 receives an externally provided clock, data instructing an operation mode, and the like, and can also output data such as internal information of the imaging device 1. The control unit 113 is a control circuit, and has, for example, a timing generator configured to be able to generate various timing signals.
[0026] The control unit 113 performs drive control of the pixel control unit 111, the signal processing unit 112, etc., based on various timing signals (pulse signals, clock signals, etc.) generated by a timing generator. The pixel control unit 111, the signal processing unit 112, the control unit 113, the processing unit 114, etc. may be provided on one semiconductor substrate, or may be provided separately on multiple semiconductor substrates. The imaging device 1 may have a layered structure formed by stacking multiple substrates. Some or all of the signal processing unit 112, the control unit 113, and the processing unit 114 may be integrally configured.
[0027] [Pixel configuration] 3 is a diagram for explaining an example of a circuit configuration of a pixel of the imaging device according to the first embodiment. The pixel P has a photoelectric conversion unit 12 (photoelectric conversion element) and a readout circuit 20. The photoelectric conversion unit 12 is configured to receive light and generate a signal. The readout circuit 20 is configured to be capable of outputting a signal based on charges photoelectrically converted. The readout circuit 20 can read out a pixel signal based on the charges photoelectrically converted by the photoelectric conversion unit 12.
[0028] The photoelectric conversion unit 12 is a light receiving unit (light receiving element) and is configured to be able to generate electric charges by photoelectric conversion. In the example shown in Fig. 3, the photoelectric conversion unit 12 is a photodiode (PD) and converts incident light into electric charges. The photoelectric conversion unit 12 can perform photoelectric conversion to generate electric charges according to the amount of received light.
[0029] The read circuit 20 includes, for example, a transistor TRG, a floating diffusion FD, a transistor AMP, a transistor SEL, and a transistor RST. The transistors TRG, AMP, SEL, and RST are each a MOS transistor (MOSFET) having a gate, a source, and a drain terminal.
[0030] 3, the transistor TRG, the transistor AMP, the transistor SEL, and the transistor RST are each configured as an NMOS transistor. Note that the transistor of the pixel P may be configured as a PMOS transistor.
[0031] The transistor TRG is a transfer transistor and is configured to be able to transfer charges photoelectrically converted by the photoelectric conversion unit 12 to the floating diffusion FD. The transistor TRG is controlled by a signal STRG to electrically connect or disconnect the photoelectric conversion unit 12 and the floating diffusion FD. The transistor TRG can transfer charges photoelectrically converted and stored in the photoelectric conversion unit 12 to the floating diffusion FD.
[0032] The floating diffusion FD is an accumulation unit and is configured to be able to accumulate the transferred electric charge. The floating diffusion FD can accumulate the electric charge photoelectrically converted by the photoelectric conversion unit 12. The floating diffusion FD can also be said to be a retention unit capable of retaining the transferred electric charge. The floating diffusion FD accumulates the transferred electric charge and converts it into a voltage according to the capacity of the floating diffusion FD.
[0033] The transistor AMP is configured to generate and output a signal based on the charge accumulated in the floating diffusion FD. The transistor AMP is an amplifying transistor, and can generate and output a signal based on the charge converted by the photoelectric conversion unit 12.
[0034] The gate of the transistor AMP is electrically connected to the floating diffusion FD, and the voltage converted by the floating diffusion FD is input to the gate of the transistor AMP. In the example shown in Fig. 3, the drain of the transistor AMP is connected to a power supply line through which a power supply voltage VDD is supplied.
[0035] The source of the transistor AMP is connected to the signal line VSL via the transistor SEL. The transistor AMP is configured to generate a signal based on the charge stored in the floating diffusion FD, i.e., a signal based on the voltage of the floating diffusion FD, and output the signal to the signal line VSL.
[0036] The transistor SEL is configured to be capable of controlling the output of a pixel signal. The transistor SEL is electrically connected in series to the transistor AMP, for example, as shown in the example of FIG. 3. The transistor SEL is controlled by a signal SSEL and configured to be capable of outputting a signal from the transistor AMP to a signal line VSL. The transistor SEL is a selection transistor and can control the output timing of the pixel signal.
[0037] The transistor SEL is configured to be capable of outputting a signal based on the charge converted by the photoelectric conversion unit 12. The transistor SEL can output a pixel signal of the pixel P to a signal line VSL. The transistor SEL may be provided between the transistor AMP and a power supply line to which a power supply voltage VDD is applied. Furthermore, the transistor SEL may be omitted as necessary.
[0038] The transistor RST is configured to be able to reset the voltage of the floating diffusion FD. In the example shown in Fig. 3, the transistor RST is electrically connected to a power supply line to which a power supply voltage VDD is applied, and is configured to reset the charge of the pixel P. The transistor RST is a reset transistor.
[0039] The transistor RST is controlled by a signal SRST, and can reset the charge accumulated in the floating diffusion FD and reset the voltage of the floating diffusion FD. In the example shown in Fig. 3, the transistor RST electrically connects the power supply line and the floating diffusion FD and can discharge the charge accumulated in the floating diffusion FD. The transistor RST can discharge the charge accumulated in the photoelectric conversion unit 12 via the transistor TRG.
[0040] The pixel control unit 111 (see FIG. 1) of the imaging device 1 supplies control signals to the gates of the transistors TRG, SEL, RST, etc. of each pixel P via the control line Lread described above, turning the transistors on (conducting) or off (non-conducting).
[0041] The multiple control lines Lread for each pixel row of the imaging device 1 include, for example, a wiring for transmitting a signal STRG that controls the transistor TRG, a wiring for transmitting a signal SSEL that controls the transistor SEL, and a wiring for transmitting a signal SRST that controls the transistor RST.
[0042] The readout circuit 20 may be configured to change the conversion efficiency (gain) when converting the charge into a voltage. For example, the readout circuit 20 may have a switching transistor used to set the conversion efficiency. As an example, the switching transistor is provided between the floating diffusion FD and the transistor RST.
[0043] In the readout circuit 20, when the switching transistor is turned on, the capacitance added to the floating diffusion FD of the pixel P increases, and the conversion efficiency is switched. The switching transistor can change the capacitance connected to the gate of the transistor AMP to change the conversion efficiency.
[0044] The transistors TRG, SEL, RST, and switching transistors are controlled to be turned on and off by a pixel control unit 111. The pixel control unit 111 controls the readout circuit 20 of each pixel P to output a pixel signal from each pixel P to a signal line VSL. The pixel control unit 111 can control the reading out of the pixel signal of each pixel P to the signal line VSL.
[0045] [Configuration of imaging device] Fig. 4 is a diagram showing an example of a planar configuration of the imaging device according to the first embodiment. Fig. 4 shows an example of an arrangement of pixels P of a pixel section 100 in the imaging device 1. The pixel P of the imaging device 1 has a filter 25 and a light guide section 50 (light guide member) configured using a structure 41.
[0046] The filter 25 is configured to selectively transmit light of a specific wavelength range from among the incident light. The filter 25 is an RGB color filter, a filter that transmits infrared light, etc. The filter 25 is provided above the photoelectric conversion unit 12 for each pixel P or for each set of multiple pixels P, for example.
[0047] The pixels P provided in the pixel section 100 of the imaging device 1 include, for example, a pixel Pr (R pixel) provided with a filter 25 that transmits red (R) light, a pixel Pg (G pixel) provided with a filter 25 that transmits green (G) light, and a pixel Pb (B pixel) provided with a filter 25 that transmits blue (B) light. In the pixel section 100, the pixels Pr, the pixels Pg, and the pixels Pb are repeatedly arranged.
[0048] The pixels Pr, Pg, and Pb are arranged according to a Bayer array, for example. The pixels Pr, Pg, and Pb can generate an R component pixel signal, a G component pixel signal, and a B component pixel signal, respectively. The imaging device 1 can obtain RGB pixel signals. The arrangement of the pixels P is not limited to the above example, and can be set arbitrarily.
[0049] For example, the pixels Pr, Pg, and Pb may each be arranged in a 2×2 pixel unit. In the pixel unit 100, for example, four adjacent pixels Pr, four adjacent pixels Pg, and four adjacent pixels Pb may be arranged repeatedly. It can also be said that the pixels Pr, Pg, and Pb are each periodically arranged in 2 rows and 2 columns.
[0050] The filter 25 provided in the pixel P of the pixel unit 100 is not limited to a primary color (RGB) color filter, and may be a complementary color filter such as Cy (cyan), Mg (magenta), or Ye (yellow). A filter corresponding to W (white), that is, a filter that transmits light of all wavelengths of incident light, may be disposed. The filter 25 may be a filter that transmits infrared light.
[0051] In addition, in the imaging device 1, the filter 25 may be omitted as necessary. For example, a pixel that receives white (W) light and performs photoelectric conversion may not have the filter 25. Also, depending on the characteristics of the light guiding section 50, for example, the filter 25 may not be provided in some or all of the pixels P of the imaging device 1.
[0052] The light guiding section 50 has a structure 41 which is a nanostructure, and is configured to guide the incident light to the photoelectric conversion section 12 side. The light guiding section 50 is a light guiding element (light guiding member) that utilizes metamaterial (metasurface) technology. The structure 41 of the light guiding section 50 has, for example, a spherical shape. The structure 41 may have an elliptical shape. The structure 41 may have, for example, a circular or elliptical planar shape.
[0053] 4, the light guide section 50 (light guide member) has a plurality of structures 41 and a filling member 45 provided around the structures 41 (see also FIG. 6 described later). The structures 41 and the filling member 45 are made of materials having refractive indices different from each other. In the imaging device 1, as in the example shown in FIG. 4, the light guide section 50 may be provided for each pixel P or for each set of pixels P.
[0054] The propagation direction of light through the structures 41 of the light-guiding unit 50 can be adjusted by the material (refractive index), size, arrangement interval (pitch), etc. of the structures 41. For example, the material, size, arrangement number, etc. of the structures 41 are determined so that light in a wavelength band to be detected is focused to the photoelectric conversion unit 12.
[0055] The plurality of structures 41 of the light guiding section 50 are arranged two-dimensionally in the X-axis direction and the Y-axis direction intersecting the X-axis direction, for example, as in the example shown in Fig. 4 or 5. The plurality of structures 41 may be arranged in a square array as in the example shown in Fig. 4, or in a hexagonal close-packed array as in the example shown in Fig. 5. For example, the arrangement positions, arrangement intervals, etc. of the structures 41 can be adjusted to obtain desired optical characteristics.
[0056] Fig. 6 is a diagram showing an example of a cross-sectional configuration of the imaging device according to the first embodiment. As shown in Fig. 6, the imaging device 1 has, for example, a light guide section 50, an insulating layer 70, a filter 25, a semiconductor layer 10, and a multi-layer wiring layer 90. The imaging device 1 has a configuration in which the light guide section 50, the insulating layer 70, the filter 25, the semiconductor layer 10, and the multi-layer wiring layer 90 are stacked in the Z-axis direction. Note that the hollow arrow in Fig. 6 typically indicates incident light to the light guide section 50 including the structure 41.
[0057] Provided from the light incident side are a layer in which the light guide section 50 is provided (optical layer 60 in FIG. 6), an insulating layer 70, a layer in which the filter 25 is provided, a semiconductor layer 10, and a multilayer wiring layer 90. In the example shown in FIG. 6, the optical layer 60 including a plurality of structures 41 is laminated on the insulating layer 70.
[0058] 6, the semiconductor layer 10 has a surface 11S1 and a surface 11S2 that face each other. The surface 11S2 is the surface opposite to the surface 11S1. The surface 11S1 of the semiconductor layer 10 is a light receiving surface (light incident surface). The surface 11S2 of the semiconductor layer 10 is an element formation surface on which elements such as transistors are formed. A gate electrode, a gate insulating film (e.g., a gate oxide film), etc. are provided on the surface 11S2 of the semiconductor layer 10.
[0059] The semiconductor layer 10 is composed of a semiconductor substrate, for example, a Si (silicon) substrate. The semiconductor layer 10 may be an SOI (silicon on insulator) substrate, a SiGe (silicon germanium) substrate, a SiC (silicon carbide) substrate, or the like. The semiconductor layer 10 may be composed of a III-V group compound semiconductor material, or may be formed using other semiconductor materials.
[0060] 6, a filter 25, a light guiding unit 50, etc. are provided on the surface 11S1 side of the semiconductor layer 10. The light guiding unit 50, the filter 25, etc. are stacked on the semiconductor layer 10 in a thickness direction perpendicular to the surface 11S1 of the semiconductor layer 10. The photoelectric conversion unit 12 performs photoelectric conversion on the light incident via the light guiding unit 50, the insulating layer 70, and the filter 25.
[0061] A multilayer wiring layer 90 is provided on the surface 11S2 side of the semiconductor layer 10. An optical layer 60 including a light guiding section 50 is provided on the side where light from the optical system is incident, and the multilayer wiring layer 90 is provided on the side opposite to the side where the light is incident. The imaging device 1 is a so-called backside illumination type imaging device.
[0062] In the semiconductor layer 10, a plurality of photoelectric conversion units 12 (photoelectric conversion elements) are provided along a surface 11S1 and a surface 11S2 of the semiconductor layer 10. In the semiconductor layer 10, for example, a plurality of photoelectric conversion units 12 are embedded. The photoelectric conversion units 12 can also be called a photoelectric conversion layer. The photoelectric conversion units 12 are provided between the surface 11S1 and the surface 11S2 of the semiconductor layer 10.
[0063] The multi-layer wiring layer 90 is provided by being laminated on the semiconductor layer 10. The multi-layer wiring layer 90 includes, for example, a conductor film and an insulating film, and has a plurality of wirings and vias (VIA), etc. The multi-layer wiring layer 90 has a configuration in which a plurality of wirings are laminated via an insulating film serving as an interlayer insulating film (interlayer insulating layer). The multi-layer wiring layer 90 includes, for example, two or more layers of wirings, or three or more layers of wirings.
[0064] The wiring of the multi-layer wiring layer 90 is formed using a metal material such as aluminum (Al), tungsten (W), copper (Cu), etc. The wiring of the multi-layer wiring layer 90 may be formed using polysilicon (Poly-Si) or other conductive materials. The interlayer insulating film is formed using, for example, silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), etc.
[0065] The semiconductor layer 10 and the multilayer wiring layer 90 are provided with the above-mentioned readout circuit 20 (see FIG. 3), for example, for each pixel P or for each set of pixels P. The above-mentioned pixel control unit 111, signal processing unit 112, control unit 113, processing unit 114, and the like (see FIG. 1) may be provided on a substrate separate from the semiconductor layer 10, or in the semiconductor layer 10 and the multilayer wiring layer 90.
[0066] The insulating layer 70 is provided between the optical layer 60 in which the light guiding section 50 is provided, and the semiconductor layer 10. In the example shown in Fig. 6, the insulating layer 70 is provided by being laminated on the layer in which the filter 25 is provided. The insulating layer 70 is formed using an insulating film such as an oxide film, a nitride film, or an oxynitride film, for example.
[0067] The insulating layer 70 is formed using an insulating material such as silicon oxide (SiO), silicon nitride (SiN), or aluminum oxide (AlO). The insulating layer 70 may be made of a material with a low refractive index such as silicon oxide, or may be made of other materials that transmit light in the wavelength range to be measured. The insulating layer 70 may also be called a planarization layer (planarization film).
[0068] 6, the imaging device 1 is provided with a separator 80. The separator 80 is provided between adjacent photoelectric conversion units 12 to separate the photoelectric conversion units 12. At least a portion of the separator 80 is provided at the boundary between adjacent pixels P (or photoelectric conversion units 12). The separator 80 is formed using, for example, a trench (groove portion).
[0069] The separation portion 80 can be formed in the semiconductor layer 10 so as to surround each of the photoelectric conversion portions 12 of the pixels P. The separation portion 80 is provided so as to penetrate the semiconductor layer 10, for example, as in the example shown in Fig. 6. The separation portion 80 can also be called a pixel separation portion or a pixel separation wall.
[0070] An insulating film, such as a silicon oxide film, a silicon nitride film, an aluminum oxide film, or the like, is provided in the trench of the isolation portion 80. Polysilicon, a metal material, other insulating materials, or the like may be embedded in the trench of the isolation portion 80. The isolation portion 80 may be configured of a semiconductor region (a p-type semiconductor region or an n-type semiconductor region) formed by ion implantation.
[0071] The separation section 80 may be formed using other insulating materials having a low refractive index. A gap (cavity) may be provided in the trench of the separation section 80. In the imaging device 1, the separation section 80 is provided to suppress leakage of electric charges photoelectrically converted in the photoelectric conversion section 12 of the pixel P to the surrounding pixels P (or the photoelectric conversion section 12). In addition, leakage of unnecessary light to the surrounding pixels P can be suppressed, and for example, color mixing can be suppressed.
[0072] The imaging device 1 may have at least one of a fixed charge film and an antireflection film. The fixed charge film and the antireflection film are provided, for example, on the surface 11S1 side of the semiconductor layer 10. As an example, the fixed charge film and the antireflection film are made of a metal compound (metal oxide, metal nitride, etc.), and can also be called a metal compound layer.
[0073] The fixed charge film and the anti-reflection film are provided, for example, between the semiconductor layer 10 and the filter 25. The fixed charge film is a film having a fixed charge and can be formed using a high dielectric material. For example, the fixed charge film is made of a metal oxide such as hafnium oxide or aluminum oxide.
[0074] The fixed charge film is, for example, a film having a negative fixed charge. By providing the fixed charge film, the generation of dark current at the interface of the semiconductor layer 10 is suppressed. The fixed charge film may be composed of another metal oxide film, or may be composed of a metal nitride film or a metal oxynitride film. As the fixed charge film, a film having a positive fixed charge may be provided.
[0075] The anti-reflection film is, for example, made of a metal oxide such as hafnium oxide or tantalum oxide. The anti-reflection film is provided, for example, so as to be laminated with the fixed charge film. The anti-reflection film is provided, for example, on the surface 11S1 side of the semiconductor layer 10, and reduces (suppresses) reflection.
[0076] The anti-reflection film may be made of an insulating material such as silicon nitride (SiN), silicon oxide (SiO), aluminum oxide (AlO), or other materials. The insulating layer 70 may be made of at least one of a fixed charge film and an anti-reflection film.
[0077] The light guiding section 50 is provided above the photoelectric conversion section 12, for example, as in the example shown in Fig. 6. Light from a subject to be measured is incident on the light guiding section 50 of each pixel P of the imaging device 1. For example, light that has passed through an optical system such as an imaging lens is incident on the multiple structures 41 of the light guiding section 50. The structures 41 are structures having a size equal to or smaller than a predetermined wavelength of the incident light.
[0078] The light guiding unit 50 has a plurality of structures 41 that are nanostructures, and is configured to guide light from a measurement target to the photoelectric conversion unit 12. The structures 41 have, for example, a size equal to or smaller than the wavelength range of light to be measured. The structures 41 may have a size equal to or smaller than the wavelength range of visible light, or may have a size equal to or smaller than the wavelength range of infrared light.
[0079] 6, the structures 41 of the light guiding section 50 have a spherical shape and are arranged side by side in the left-right direction (X-axis direction) of the drawing, with a part of the filling member 45 sandwiched between them. The shape of the structures 41 may be an ellipsoid.
[0080] A plurality of structures 41 having a spherical or ellipsoidal shape are provided in the optical layer 60. Each structure 41 may have, for example, a circular or elliptical side shape. The shape of the structures 41 may be substantially spherical or substantially ellipsoidal as long as the predetermined performance can be achieved.
[0081] The light-guiding section 50 has a filling member 45 provided around the structures 41. The filling member 45 is provided in the optical layer 60 so as to fill the periphery of the structures 41. For example, the filling member 45 is formed on the insulating layer 70 so as to fill the spaces between adjacent structures 41.
[0082] 6, the filling member 45 may be formed so as to cover the structures 41. For example, the filling member 45 is a protective member (protective layer) and is formed so as to entirely cover the multiple structures 41. It can be said that the structures 41 are provided within the filling member 45 and are disposed by replacing a part of the filling member 45.
[0083] The light guiding unit 50 utilizes the structure 41, which is a nanostructure, to propagate light toward the photoelectric conversion unit 12. The structure 41 is also called a meta-atom, a nano-atom, a metasurface structure, a microstructure, etc. The light guiding unit 50 is an optical element (optical member) that guides (propagates) light. The light guiding unit 50 can be said to be a light guiding element configured to be able to guide light. The light guiding unit 50 is provided, for example, for each pixel P or for each set of pixels P (i.e., for each predetermined number of pixels P).
[0084] The light guide section 50 is configured, for example, as a spectroscopic element (spectroscopic section) that splits light. The light guide section 50 is configured, for example, to give a phase delay to the incident light and guide the light. In the optical layer 60, a plurality of structures 41 are arranged so as to give a desired phase profile to the incident light. For example, the plurality of structures 41 are arranged side by side in the X-axis direction and the Y-axis direction in a plan view, as in the example shown in FIG. 4 (or FIG. 5).
[0085] In each pixel P of the imaging device 1, a plurality of structures 41 may be arranged at intervals equal to or less than a predetermined wavelength of incident light. As an example, the plurality of structures 41 are provided at intervals equal to or less than the wavelength range of visible light in the X-axis direction and the Y-axis direction. Note that the plurality of structures 41 may also be arranged at intervals equal to or less than the wavelength range of infrared light.
[0086] The structure 41 of the light-guiding section 50 has a refractive index different from that of the adjacent medium. In the example shown in Fig. 6, the structure 41 has a refractive index different from that of the filling member 45. The structure 41 has a refractive index different from that of the medium layer formed around the structure 41, i.e., the filling member 45. The filling member 45 can also be said to be a material layer having a refractive index different from that of the structure 41.
[0087] The structure 41 of the light-guiding unit 50 has, for example, a refractive index higher than that of the filling member 45. The structure 41 can be made of a material having a refractive index higher than that of the filling member 45. The structure 41 is made of, for example, titanium oxide (TiO). The structure 41 may be formed of silicon, polysilicon (Poly-Si), amorphous silicon (a-Si), germanium (Ge), or the like.
[0088] The structure 41 may be made of a simple substance, an oxide, a nitride, an oxynitride, or a composite of titanium (Ti), hafnium (Hf), zirconium (Zr), aluminum (Al), tantalum (Ta), indium (In), niobium (Nb), etc. The structure 41 may be made of other metal compounds (metal oxides, metal nitrides, etc.).
[0089] The structure 41 of the light-guiding section 50 may have a refractive index lower than that of the filling member 45. The structure 41 may be made of a material having a refractive index lower than that of the filling member 45. The structure 41 may be made of, for example, magnesium fluoride (MgF).
[0090] The structure 41 may be formed using silicon oxide, silicon nitride, silicon nitride oxide, silicon carbide, silicon oxide carbide, or other silicon compounds. The structure 41 may also be configured using an organic material. The structure 41 may also be configured using a siloxane-based resin, a styrene-based resin, an acrylic-based resin, or the like. The structure 41 may also be formed using beads (filler).
[0091] The filling member 45 is, for example, made of an inorganic material such as an oxide, a nitride, or an oxynitride. The filling member 45 may be made of, for example, silicon oxide, silicon nitride, silicon oxynitride, or silicon carbide. Note that the filling member 45 and a part or the whole of the insulating layer 70 may be integrally formed. The filling member 45 may be made of an organic material.
[0092] The filling member 45 may be made of a siloxane resin, a styrene resin, an acrylic resin, or the like. The filling member 45 may be made of any of these resins containing fluorine. The filling member 45 may be formed of any of these resins filled with beads having a refractive index higher (or lower) than that of the resin.
[0093] The materials of the structure 41 and the filling member 45 can be selected depending on the refractive index difference with the surrounding medium, the wavelength range of the incident light to be measured, etc. The structure 41 and the filling member 45 may be made of an inorganic material or an organic material. The structure 41 or the filling member 45 may be made of a void (cavity). For example, the filling member 45 may be made to include air (void).
[0094] The light guiding unit 50 can control the wavefront of the light by causing a phase delay in the incident light due to, for example, a refractive index difference between the structure 41 and the surrounding medium. The light guiding unit 50 can adjust the propagation direction of the light by, for example, imparting a phase delay to the incident light by the structure 41 and the filling member 45 around the structure 41.
[0095] In the imaging device 1, for example, the average refractive index in the light guiding section 50 changes depending on the area (or volume) occupied by the structures 41 per unit area (or unit volume). Therefore, for example, the average refractive index can be changed by adjusting the diameter of the spherical structures 41, and the amount of phase delay in the light guiding section 50 can be adjusted.
[0096] In each pixel P of the imaging device 1, for example, the effective refractive index of the light guide section 50 by the structures 41 and the filling member 45 is adjusted according to the packing rate (occupancy rate) of the spherical or ellipsoidal structures 41, and the phase delay amount of light in each wavelength range can be set. By adjusting the size of each structure 41, the phase delay amount can be controlled, and a desired phase distribution can be realized.
[0097] The materials (optical constants of each material) of the structures 41 and the filling member 45, the size (width (diameter), height, etc.) of the structures 41, the pitch (disposition interval), etc. of the structures 41 are determined so that light of a desired wavelength range among the incident light from the measurement target travels in a desired direction. For example, the material (refractive index), dimensions, pitch, and material (refractive index) of the structures 41 and the filling member 45 can be set.
[0098] The light guiding unit 50 is configured as a spectroscopic unit (spectroscopic element) capable of splitting incident light, for example. The light guiding unit 50 may also be referred to as a splitter (color splitter). The light guiding unit 50 (or the optical layer 60) may also be referred to as a color splitter layer, a wavelength separation layer, or a metasurface layer. The light guiding unit 50 may also be referred to as an optical element configured to redirect light.
[0099] The light guiding unit 50 can adjust the propagation direction of light by, for example, imparting different amounts of phase delay according to the wavelength of the light, and can separate the incident light into light of each wavelength range. The propagation direction of light of each wavelength by the light guiding unit 50 can be adjusted by the material, width, height, arrangement position, etc. of the structure 41.
[0100] As an example, in the imaging device 1, the material, size, arrangement position, and the like of the structures 41 are determined so that light in a specific wavelength band to be detected branches off and travels to the photoelectric conversion unit 12 of a desired pixel P. The light guide unit 50 includes a plurality of structures 41 and can be configured to split the incident light.
[0101] The structures 41 of the light guide section 50 may be provided so as to be in contact with the insulating layer 70, for example, as in the example shown in Fig. 7. The multiple structures 41 may be located at different distances (intervals) from the semiconductor layer 10 (or the insulating layer 70). For example, in order to obtain desired optical characteristics (e.g., spectral characteristics), multiple structures 41 may be provided at different height positions from the semiconductor layer 10 (or the insulating layer 70) as in the example shown in Fig. 8. The light guide section 50 may be provided for multiple adjacent pixels P.
[0102] 9A and 9B are diagrams showing examples of cross-sectional configurations at different image heights of the imaging device according to the first embodiment. Fig. 9B shows an example of a cross-sectional configuration in a region where the distance from the center of the pixel unit 100, i.e., the image height, is higher than that in Fig. 9A. In the example shown in Fig. 9A and 9B, a light guide unit 50 is provided for a plurality of adjacent pixels P.
[0103] For example, light from an optical lens is incident almost perpendicularly on the central portion of the pixel unit 100 of the imaging device 1. Light is incident obliquely on the peripheral portion located outside the central portion, i.e., on the region away from the center of the pixel unit 100, as in the example shown by the outlined arrow in Fig. 9B. Therefore, in the imaging device 1, the position of the light guide unit 50 (or the structure 41) in each pixel P can be configured to differ depending on the distance from the center of the pixel unit 100, i.e., the image height.
[0104] 9B, the light guide 50 having the structures 41 is disposed, for example, shifted toward the center of the pixel unit 100 with respect to the filter 25 and the photoelectric conversion unit 12. In the example shown in FIG 9B, the light guide 50 is also shifted rightward with respect to the filter 25 and the photoelectric conversion unit 12 of the pixel P.
[0105] In the pixel section 100 of the imaging device 1, the position of the light guiding section 50 including the structures 41 is adjusted according to the image height, and pupil correction can be appropriately performed. A decrease in the amount of light incident on the photoelectric conversion section 12 of each pixel P can be suppressed, and a decrease in sensitivity to the incident light can be suppressed.
[0106] The light guiding section 50 imparts different phase delays to light in a plurality of wavelength ranges, for example, light in a first wavelength range to a third wavelength range, respectively. This enables the imaging device 1 to separate the light incident on the light guiding section 50 into light in the first wavelength range, light in the second wavelength range, and light in the third wavelength range.
[0107] The imaging device 1 may be configured to separate, for example, light in a first wavelength range, light in a second wavelength range, and light in a third wavelength range from light incident on the light guiding unit 50. As an example, the imaging device 1 may adjust the traveling directions of each of the first to third wavelength lights, that is, blue light, green light, and red light.
[0108] The light guiding section 50 of the pixel Pb is configured to be capable of propagating, of the incident light, blue (B) light to the filter 25 and photoelectric conversion section 12 of the pixel Pb, and red (R) light to the filter 25 and photoelectric conversion section 12 of the pixel Pr. The light guiding section 50 of the pixel Pb splits the incident light, and guides, of the incident light, light in the red wavelength range toward the pixel Pr.
[0109] Furthermore, the light guiding unit 50 of the pixel Pb is configured to propagate green (G) light, of the incident light, to the filter 25 and the photoelectric conversion unit 12 of the pixel Pg. The light guiding unit 50 of the pixel Pb splits the incident light, and guides light in the green wavelength range, of the incident light, toward the pixel Pg.
[0110] The light guiding section 50 of the pixel Pr is configured to be capable of propagating, of the incident light, red (R) light to the filter 25 and photoelectric conversion section 12 of the pixel Pr, and blue (B) light to the filter 25 and photoelectric conversion section 12 of the pixel Pb. The light guiding section 50 of the pixel Pr splits the incident light, and guides, of the incident light, light in the blue wavelength range toward the pixel Pb.
[0111] Furthermore, the light guiding unit 50 of the pixel Pr is configured to propagate green (G) light, of the incident light, to the filter 25 and the photoelectric conversion unit 12 of the pixel Pg. The light guiding unit 50 of the pixel Pr splits the incident light, and guides light in the green wavelength range, of the incident light, toward the pixel Pg.
[0112] The light guiding section 50 of the pixel Pg is configured to be able to propagate, of the incident light, green (G) light to the filter 25 and photoelectric conversion section 12 of the pixel Pg, and blue (B) light to the filter 25 and photoelectric conversion section 12 of the pixel Pb. The light guiding section 50 of the pixel Pg splits the incident light, and guides, of the incident light, light in the blue wavelength range toward the pixel Pb.
[0113] Furthermore, the light guiding unit 50 of the pixel Pg is configured to propagate red (R) light, of the incident light, to the filter 25 and the photoelectric conversion unit 12 of the pixel Pr. The light guiding unit 50 of the pixel Pg splits the incident light, and guides light in the red wavelength range, of the incident light, toward the pixel Pr.
[0114] In this way, as shown by arrows in Fig. 10A, the pixels surrounding pixel Pb guide blue wavelength light of the incident light toward pixel Pb. The blue light incident on pixel Pb and the blue light incident on each of the pixels surrounding pixel Pb can be collected on filter 25 and photoelectric conversion unit 12 of pixel Pb. Photoelectric conversion unit 12 of pixel Pb can efficiently receive light in the blue wavelength range and perform photoelectric conversion, thereby generating electric charges according to the amount of received light.
[0115] As shown by arrows in Fig. 10B, the pixels surrounding pixel Pg guide the green wavelength light of the incident light toward pixel Pg. The green light incident on pixel Pg and the green light incident on each of the pixels surrounding pixel Pg can be collected on filter 25 and photoelectric conversion unit 12 of pixel Pg. Photoelectric conversion unit 12 of pixel Pg can efficiently receive light in the green wavelength range and perform photoelectric conversion, thereby generating electric charges according to the amount of received light.
[0116] 10C, the pixels surrounding the pixel Pr guide light of red wavelengths among the incident light toward the pixel Pr. The red light incident on the pixel Pr and the red light incident on each of the pixels surrounding the pixel Pr can be collected on the filter 25 and the photoelectric conversion unit 12 of the pixel Pr. The photoelectric conversion unit 12 of the pixel Pr can efficiently receive light in the red wavelength range, perform photoelectric conversion, and generate electric charges according to the amount of received light.
[0117] In this way, in the imaging device 1, light to be detected can be effectively taken into the pixel P from the pixels surrounding the pixel P, and the quantum efficiency (QE) can be improved. Note that the structures 41 of the light guide sections 50 of the pixels Pb, Pg, and Pr described above can be formed so as to have different sizes (e.g., width, height), arrangement positions, etc.
[0118] As described above, light from a subject, which is an object to be measured, is incident on each pixel P of the imaging device 1 via the light guiding section 50. Each pixel P can receive the light incident via the structure 41 of the light guiding section 50 and generate a pixel signal. The imaging device 1 can generate image data indicating an image of the subject using, for example, the pixel signal obtained by photoelectric conversion in each pixel P.
[0119] Furthermore, for example, the imaging device 1 can generate image data (distance image data) related to the distance to an object using the pixel signal of each pixel. In the imaging device 1, the light guiding section 50 having the structure 41 can appropriately guide light in an arbitrary wavelength range to the photoelectric conversion section 12 side. It is possible to improve the sensitivity to incident light.
[0120] As described above, the imaging device 1 is provided with the spherical or ellipsoidal structures 41. Therefore, even when light is obliquely incident on the light guiding section 50, the incident light can be appropriately guided to the photoelectric conversion section 12 side. By configuring the light guiding section 50 with the spherical or ellipsoidal structures 41, it is possible to reduce the difference between the optical path length in the structure 41 in the case of perpendicular incident light and the optical path length in the structure 41 in the case of obliquely incident light. It is possible to prevent a situation in which a desired phase delay amount cannot be obtained in the case of obliquely incident light.
[0121] In the imaging device 1, by providing the spherical or ellipsoidal structures 41, it is possible to reduce the difference between the amount of phase delay in the case of perpendicular incident light and the amount of phase delay in the case of oblique incident light. This makes it possible to reduce the difficulty of designing a color splitter, for example. It is possible to improve the characteristics for oblique incident light compared to the case where light is split by a columnar (pillar-shaped) structure.
[0122] In the present embodiment, it is possible to split light incident at an angle to the structure 41 of the light-guiding section 50 and appropriately focus the light on the photoelectric conversion section 12 side. It is possible to prevent the degradation of the spectroscopic characteristics in the case of obliquely incident light. It is possible to prevent the occurrence of unnecessary reflected light or refracted light and to prevent the decrease in the light utilization efficiency.
[0123] 11A to 11J are diagrams illustrating an example of a method for manufacturing the light guiding section of the imaging device according to the first embodiment. First, as shown in Fig. 11A, a filling member 45 is formed on an insulating layer 70, and a resist film 85a is formed on the filling member 45. Then, the resist film 85a is processed by lithography and etching, as shown in Fig. 11B.
[0124] Next, as shown in Fig. 11C, the filling member 45 is wet etched. Then, as shown in Fig. 11D, the resist film 85a is peeled off (removed). Furthermore, as shown in Fig. 11E, a material film 86 (for example, a titanium oxide film, an a-Si film, or the like) is formed as a material for the structure 41.
[0125] Next, as shown in Fig. 11F, a resist film 85b is formed on the material film 86. Then, as shown in Fig. 11G, the resist film 85b is processed by lithography and etching. Furthermore, as shown in Fig. 11H, the resist film 85b is subjected to a heat treatment so that the shape of the resist film 85b becomes hemispherical.
[0126] 11I, the resist film 85b and the material film 86 are anisotropically etched (for example, reactive ion etching (RIE)). As a result, excess portions of the material film 86 are removed, and spherical structures 41 are formed.
[0127] Then, as shown in Fig. 11J, filling member 45 is formed on structure 41. By the manufacturing method as described above, light guiding section 50 shown in Fig. 6, Fig. 7, etc. can be manufactured. Note that the above-described manufacturing method is merely one example, and other manufacturing methods may be adopted.
[0128] [Actions and Effects] The light detection device of this embodiment includes a first structure (structure 41) having a spherical or ellipsoidal shape, a first light-guiding member (light-guiding section 50) including a filling member (filling member 45) provided around the first structure and having a refractive index different from that of the first structure, and a first photoelectric conversion element (photoelectric conversion section 12) that photoelectrically converts light incident through the first light-guiding member.
[0129] In the photodetector according to the present embodiment, a light guide section 50 including structures 41 having a spherical or ellipsoidal shape is provided. Therefore, the photodetector (imaging device 1) can appropriately guide obliquely incident light. It is possible to realize a photodetector capable of improving characteristics for obliquely incident light.
[0130] Next, a modified example of the present disclosure will be described. In the following, the same components as those in the above embodiment are denoted by the same reference numerals, and the description thereof will be omitted as appropriate.
[0131] (1-1. Variation 1) In the above-mentioned embodiment, the configuration example of the imaging device has been described, but the configuration of the imaging device is not limited to the above-mentioned example. Fig. 12A and Fig. 12B are diagrams for explaining a configuration example of the imaging device according to the first modification of the present disclosure. The imaging device 1 may have a plurality of structures 41 (structures 41a and 41b in Fig. 12A and Fig. 12B) arranged to be stacked on top of each other.
[0132] The light guiding section 50 may have structures 41 and 41b each having a spherical or ellipsoidal shape. The structures 41b are provided so as to be stacked with the structures 41a. The filling member 45 is provided between the structures 41a adjacent to each other and between the structures 41b adjacent to each other. In addition, a part of the filling member 45 is provided between the structures 41a and 41b.
[0133] The structures 41a and 41b may be provided along the optical axis L1, for example, as shown in Fig. 12A or 12B. In a region where light from a measurement target is incident vertically, the structures 41a and 41b are arranged along the optical axis L1 of an optical system such as an imaging lens, for example, as shown in Fig. 12A. In a region where light from a measurement target is incident obliquely, the structures 41a and 41b may be arranged side by side along the optical axis L1 of the optical system, for example, as shown in Fig. 12B.
[0134] The structures 41a and 41b may be formed to have different sizes, shapes, etc. The structures 41a and 41b may be made of the same material or different materials. The structures 41a and 41b may have different refractive indices.
[0135] The structure 41b has, for example, a refractive index different from that of the structure 41a. The structure 41b may have a refractive index higher than that of the structure 41a. The structure 41b may be made of a material having a refractive index higher than that of the structure 41a and that of the filling member 45.
[0136] The structures 41b may have a refractive index lower than that of the structures 41a. The structures 41b may be made of, for example, a material having a refractive index lower than that of the structures 41a and that of the filling member 45. The light-guiding section 50 may be configured to include three or more types of structures 41 having different refractive indices.
[0137] 13A and 13B are diagrams for explaining another configuration example of the imaging device according to Modification 1. The structures 41a and 41b may have different sizes, as in the example shown in FIG. 13A or 13B. In the example shown in FIG. 13A and 13B, the structure 41a is larger than the structure 41b. The light guiding section 50 may be configured to include three or more types of structures 41 having different sizes.
[0138] (1-2. Variation 2) Fig. 14 is a diagram for explaining a configuration example of an imaging device according to Modification 2. A structure 41 has a first portion 42a and a second portion 42b. As in the example shown in Fig. 14, the second portion 42b of the structure 41 can be provided so as to cover the periphery of the first portion 42a. It can also be said that the first portion 42a is provided within the second portion 42b and is disposed by replacing a part of the second portion 42b.
[0139] The first portion 42a of the structure 41 has a refractive index different from that of the second portion 42b. For example, the first portion 42a may be made of a material having a refractive index lower than that of the second portion 42b, and may have a refractive index lower than that of the second portion 42b. Also, for example, the first portion 42a may have a refractive index higher than that of the second portion 42b and that of the filling member 45.
[0140] The first part 42a, the second part 42b, and the filling member 45 may be configured to include different materials. For example, the first part 42a has a refractive index n1, the second part 42b has a refractive index n2, and the filling member 45 has a refractive index n0. As an example, the first part 42a, the second part 42b, and the filling member 45 may be provided so as to satisfy n1 < n2 < n0. As another example, the first part 42a, the second part 42b, and the filling member 45 may be provided so as to satisfy n1 < n0 < n2.
[0141] (1-3. Variant 3) FIGS. 15A and 15B are diagrams for explaining a configuration example of the imaging device according to Variant 3. The structure 41 has a first part 42a and a second part 42b. The first part 42a and the second part 42b each have a spherical or ellipsoidal shape. The first part 42a and the second part 42b are provided so as to be in contact with each other as shown in the example of FIG. 15A or FIG. 15B. The first part 42a and the second part 42b may be provided along the optical axis L1 of the optical lens.
[0142] For example, at least a part of the first part 42a of the structure 41 may be provided inside the second part 42b. The second part 42b may be formed to include at least a part of the first part 42a. It can also be said that a part of the first part 42a is arranged in place of the second part 42b. Also, for example, at least a part of the second part 42b may be provided inside the first part 42a. The first part 42a may be formed to include at least a part of the second part 42b.
[0143] (1-4. Variant 4) FIGS. 16A and 16B are diagrams for explaining a configuration example of the imaging device according to Variant 4. The light guide part 50 of the imaging device 1 may have an antireflection film 61. The antireflection film 61 (reflection suppression film) may be formed so as to cover at least a part of the structure 41 in the light guide part 50. The antireflection film 61 is provided, for example, on the side where light enters the structure 41 and is located on the structure 41. At least a part of the antireflection film 61 is provided on the optical axis L1.
[0144] 16A and 16B, the anti-reflection film 61 may be formed on the optical axis L1. The anti-reflection film 61 may be made of a metal compound, a silicon compound, or other material. The anti-reflection film 61 may be made of a plurality of films stacked together. The anti-reflection film 61 may be provided so as to entirely cover one or a plurality of structures 41.
[0145] For example, the structure 41 has a refractive index n2, the anti-reflection film 61 has a refractive index n1, and the filling member 45 has a refractive index n0. As one example, the structure 41, the anti-reflection film 61, and the filling member 45 may be provided so as to satisfy n0>n1>n2. As another example, the structure 41, the anti-reflection film 61, and the filling member 45 may be provided so as to satisfy n2>n1>n0.
[0146] In the imaging device 1 according to this modification, the anti-reflection film 61 is provided, thereby making it possible to reduce reflection in the light guiding section 50. This makes it possible to prevent unnecessary reflected light from occurring in each pixel P of the imaging device 1 and to prevent a decrease in light utilization efficiency.
[0147] 17A and 17B are diagrams for explaining another configuration example of an imaging device according to Modification 4. As shown in FIG. 17A or 17B, the light guiding section 50 of the imaging device 1 may have an antireflection film 61a and an antireflection film 61b as an antireflection film 61 (antireflection film). For example, the antireflection film 61a is provided on the side of the structure 41 where light is incident. Moreover, the antireflection film 61b is provided on the side of the structure 41 opposite to the side where light is incident.
[0148] The anti-reflection films 61a and 61b may be made of the same material or different materials. The anti-reflection films 61a and 61b may have different refractive indices. The light-guiding unit 50 may be configured to include only one of the anti-reflection films 61a and 61b.
[0149] (1-5. Variation 5) 18A to 18D are diagrams for explaining a configuration example of an imaging device according to Modification 5. The structure 41 may have an ellipsoidal shape, as in the example shown in Figs. 18A to 18D. The structure 41 may be provided such that the major axis (major diameter) of the elliptical structure 41 is aligned with the optical axis L1. For example, the structure 41 may be provided such that the minor axis (minor diameter) of the structure 41 intersects (for example, is perpendicular to) the optical axis L1.
[0150] The structures 41 of the light guiding section 50 may be provided such that the minor axis (minor diameter) of the elliptical structures 41 is aligned with the optical axis L1. For example, the structures 41 may be provided such that the major axis (major diameter) of the structures 41 intersects (for example, is perpendicular to) the optical axis L1. Note that in the imaging device 1, a plurality of elliptical structures 41 may be provided so as to be stacked on top of each other.
[0151] (1-6. Variation 6) The light guiding unit 50, which is an optical element, may be configured as a lens that condenses light, depending on the design of the structure 41. The light guiding unit 50 may also be configured as an optical element that controls the polarization state of light. In these cases, the light guiding unit 40 is called a metalens (metamaterial lens), a polarizing metalens, or the like.
[0152] The light guiding unit 50 may be configured as a filter that selectively transmits light of a specific wavelength range among the incident light. The light guiding unit 50 may be configured as an optical element (called a deflector) that changes the traveling direction of light of a specific wavelength range. The optical element (light guiding unit 50) and the photodetector according to the present disclosure can be applied to various devices.
[0153] <2. Second embodiment> Next, a second embodiment of the present disclosure will be described. In the following, the same components as those in the above-described embodiment are denoted by the same reference numerals, and the description thereof will be omitted as appropriate.
[0154] Fig. 19 is a diagram showing an example of a planar configuration of an imaging device according to a second embodiment of the present disclosure. Fig. 20 is a diagram showing an example of a cross-sectional configuration of an imaging device according to the second embodiment. In the imaging device 1 according to this embodiment, the density of the structures 41 in the light guiding section 50 of each pixel P may be configured to be different. For example, the imaging device 1 is configured so that the density of the spherical or ellipsoidal structures 41 is different for each pixel P of each color.
[0155] The light guide sections 50 of the pixels Pr, Pg, and Pb of the imaging device 1 may be formed so as to have different densities of the structures 41. For example, in order to obtain desired optical characteristics, the area (or volume) occupied by the structures 41 in the light guide section 50 (or the optical layer 60) of each pixel P is adjusted. As shown in Fig. 19, the densities of the structures 41 in the pixels Pr, Pg, and Pb are different from each other.
[0156] 19, the imaging device 1 is configured such that the number of structures 41 in the light guiding section 50 of pixel Pr is different from the number of structures 41 in the light guiding section 50 of pixel Pg, and the number of structures 41 in the light guiding section 50 of pixel Pb. Note that the structures 41 in the pixels P of each color may all have the same size.
[0157] 19 and 20, for example, the density (or number) of structures 41 in the light guiding section 50 of pixel Pr is greater than the density (or number) of structures 41 in the light guiding section 50 of pixel Pb. Also, the density of structures 41 in the light guiding section 50 of pixel Pr is less than the density of structures 41 in the light guiding section 50 of pixel Pg. Note that the number, arrangement, etc. of structures 41 in each pixel P (or light guiding section 50) can be set appropriately according to desired optical characteristics (e.g., spectral characteristics).
[0158] In the imaging device 1 according to the present embodiment, the amount of phase delay in the light guiding section 50 is adjusted according to the density of the spherical or ellipsoidal structures 41, and the phase of light can be controlled. For example, the amount of phase delay can be controlled according to the density difference of the structures 41, and the phase design (phase control) of the light guiding section 50 as a color splitter can be appropriately performed. It is possible to suppress the degradation of the spectral characteristics in the case of obliquely incident light.
[0159] Fig. 21 is a diagram for explaining a configuration example of an imaging device according to a second embodiment. Fig. 21 shows an example of a cross-sectional configuration in a region where the distance from the center of the pixel unit 100, i.e., the image height, is higher than that in Fig. 20. In the imaging device 1 of this embodiment as well, the position of the light guiding unit 50 (or the structure 41) in each pixel P is adjusted according to the image height, and pupil correction can be appropriately performed. This makes it possible to suppress unevenness (shading) from occurring in an image generated using the pixel signal of each pixel P.
[0160] [Actions and Effects] The light detection device according to the present embodiment includes a first structure (structure 41) having a spherical or ellipsoidal shape, a first light guide member (e.g., light guide section 50 of pixel Pg) including a filling member (filling member 45) provided around the first structure and having a refractive index different from that of the first structure, and a first photoelectric conversion element (photoelectric conversion section 12) that photoelectrically converts light incident through the first light guide member. The light detection device further includes a second light guide member (e.g., light guide section 50 of pixel Pb (or pixel Pr)) including the first structure and the filling member, and a second photoelectric conversion element that photoelectrically converts light incident through the second light guide member. The density of the first structures in the first light guide member is different from the density of the first structures in the second light guide member.
[0161] In the photodetector according to the present embodiment, for example, the density of structures 41 in light guide section 50 of pixel Pg is different from the density of structures 41 in light guide section 50 of pixel Pb. Phase control can be performed by the density difference of structures 41 having a spherical or ellipsoidal shape. It is possible to realize a photodetector capable of improving characteristics for obliquely incident light.
[0162] Next, a modified example of the present disclosure will be described. In the following, the same components as those in the above embodiment are denoted by the same reference numerals, and the description thereof will be omitted as appropriate.
[0163] (2-1. Variation 7) 22 is a diagram for explaining a configuration example of an imaging device according to Modification 7. The structure 41 has a first portion 42a and a second portion 42b. For example, the first portion 42a and the second portion 42b each have a hemispherical shape. Each of the first portion 42a and the second portion 42b may have a semi-ellipsoidal shape.
[0164] The imaging device 1 may have an intermediate layer 65, as in the example shown in Fig. 22. The intermediate layer 65 is an etching stopper layer (stopper film) and is provided between the first portion 42a and the second portion 42b. The intermediate layer 65 can also be considered a spacer layer. In the imaging device 1, by providing the intermediate layer 65 (stopper layer), it is possible to improve the processing controllability of the first portion 42a and the second portion 42b of the structure 41.
[0165] The structures 41a and 41b may be made of the same material or different materials. The structures 41a and 41b may have different refractive indices. By selecting the materials of the structures 41a and 41b, the refractive index pattern can be increased, and phase control can be facilitated. The material of the intermediate layer 65 can be selected according to, for example, the material of the first portion 42a, the material of the second portion 42b, the material of the filling member 45, and the like.
[0166] (2-2. Variation 8) Fig. 23 is a diagram for explaining a configuration example of an imaging device according to Modification Example 8. A structure 41 has a first portion 42a and a second portion 42b. The second portion 42b of the structure 41 may be provided so as to cover the periphery of the first portion 42a, as in the example shown in Fig. 23. The first portion 42a of the structure 41 has a refractive index different from the refractive index of the second portion 42b.
[0167] The first part 42a, the second part 42b, and the filling member 45 can be configured using different materials as an example. For example, the first part 42a has a refractive index n1, the second part 42b has a refractive index n2, and the filling member 45 has a refractive index n0. The first part 42a, the second part 42b, and the filling member 45 may be formed so as to satisfy n1 < n2 < n0, or may be formed so as to satisfy n1 < n0 < n2.
[0168] In the imaging device 1 according to this modification example, by combining a plurality of materials to form the structure 41, the amount of phase delay of light can be finely adjusted. Therefore, the optical characteristics of the light guide unit 50 can be improved, and for example, high condensing performance can be realized.
[0169] (2-3. Modification Example 9) FIGS. 24A and 24B are diagrams for explaining a configuration example of an imaging device according to Modification Example 9. The imaging device 1 may have a plurality of structures 41 (structures 41a and 41b in FIGS. 24A and 24B) provided so as to be laminated on each other. An intermediate layer 65 may be provided between the layer (layer 101) where the structure 41a is provided and the layer (layer 102) where the structure 41b is provided.
[0170] The imaging device 1 may be configured such that the number and arrangement of the structures 41a in layer 101 are different from the number and arrangement of the structures 41b in layer 102. For example, as shown in the example of FIG. 24B, the number of arranged structures 41a in layer 101 may be different from the number of arranged structures 41b in layer 102. In the imaging device 1 according to this modification example, it is possible to make the phase difference control different for each layer.
[0171] (2-4. Modification Example 10) FIGS. 25A and 25B are diagrams for explaining a configuration example of an imaging device according to Modification Example 10. Each light guide unit 50 of the imaging device 1 may have a plurality of types of structures 41 (structures 41a, 41b, and 41c in FIGS. 25A and 25B). The structures 41a to 41c are configured using different materials.
[0172] 25A or 25B, the structures 41b are disposed around the structures 41a and have a refractive index different from that of the structures 41a. Moreover, the structures 41c are disposed around the structures 41a and have a refractive index different from that of the structures 41a and the structures 41b. The imaging device 1 may be configured such that the number and arrangement of the structures 41a to 41c differ for each pixel P of each color, for example.
[0173] 26A and 26B are diagrams for explaining another example configuration of an imaging device according to Modification 10. In imaging device 1, different structures 41 may be arranged on each story. For example, as shown in FIG. 26A, structures 41a may be arranged on story 101, and structures 41b may be arranged on story 102. Also, for example, in imaging device 1, the number of structures 41a to 41c arranged may differ depending on the story and pixel position, as in the example shown in FIG. 26B.
[0174] (2-5. Variation 11) FIG. 27 is a diagram for explaining a configuration example of an imaging device according to Modification 11. The structures 41 may have an ellipsoidal shape. In the example shown in FIG. 27, the optical layer 60 is provided with ellipsoidal structures 41b. The structures 41b may be arranged such that the minor axis (minor diameter) of the structures 41b is aligned with the optical axis L1. The light guide section 50 may have spherical structures 41a and ellipsoidal structures 41b. The phase difference control can be performed by the density and width of the structures 41a and 41b.
[0175] (2-6. Variation 12) FIG. 28 is a diagram for explaining a configuration example of an imaging device according to Modification 12. As in the example shown in FIG. 28, the light guide section 50 may have structures 42 having a columnar (pillar) shape. For example, a cylindrical structure 42 may be arranged in one type of pixel (for example, pixel Pr) among the pixels Pr, Pg, and Pb. In the imaging device 1 according to this modification, the spherical or ellipsoidal structure 41 and the columnar structure 42 can finely adjust the phase difference of light in each wavelength range. It is possible to improve the accuracy of phase difference control.
[0176] <3. Third embodiment> Next, a third embodiment of the present disclosure will be described. The technology according to the present disclosure is applicable to various electronic devices, optical devices, and the like. The light guide section (light guide section 50) configured using the above-mentioned nanostructure is applicable to various optical elements (optical members). In the following, the same components as those in the above-mentioned embodiment are given the same reference numerals, and the description will be omitted as appropriate.
[0177] 29 is a diagram for explaining a configuration example of an optical element according to a third embodiment of the present disclosure. The optical element 200 has a substrate 120 and a plurality of structures 41. The optical element 200 is an optical element (optical member) configured using the structures 41, which are nanostructures, and can be configured as a metalens (metamaterial lens).
[0178] The substrate 120 is a substrate (transparent substrate) that transmits light, and is made of, for example, a glass substrate. As an example, the substrate 120 (base material) may be made of a material having a refractive index lower than that of the structures 41. The substrate 120 may be made of quartz glass, borosilicate glass, or the like, or may be made of a resin substrate. The substrate 120 (base material) may be made of another material that transmits the light to be measured.
[0179] As shown in Fig. 29, the substrate 120 has a surface 12S1 and a surface 12S2 facing each other. The surface 12S2 is the surface opposite to the surface 12S1. The plurality of structures 41 are provided, for example, on the side of the substrate 120 where light is incident. In the example shown in Fig. 29, an optical layer 60 including the plurality of structures 41 and a filling member 45 is formed on the surface 12S1 of the substrate 120. The structures 41 may be provided so as to be in contact with the substrate 120, as in the example shown in Fig. 30.
[0180] The structures 41 of the optical element 200 have a spherical or ellipsoidal shape. The optical layer 60 including the structures 41 may be provided on the side of the substrate 120 opposite to the side where light is incident (i.e., the side where light is emitted). The optical layer 60 may be laminated on the substrate 120 via an insulating layer on the light incident side or light exit side of the substrate 120. The shape of the substrate 120 is not particularly limited, and may be circular, rectangular, or another shape.
[0181] The optical element 200 may be configured as a lens such as a lens that collects light or a lens that diffuses light. The optical element 200 may be configured as a splitter that separates incident light, a filter that transmits light in a specific wavelength range, a deflector that changes the traveling direction of light, or the like. The optical element 200 may be configured as, for example, a part of the optical system of various devices. The optical element 200 is also called a metasurface optical element.
[0182] [Actions and Effects] The optical element (optical element 200) of this embodiment comprises a plurality of first structures (structures 41) having a spherical or ellipsoidal shape, and a filling member (filling member 45) provided between adjacent first structures and having a refractive index different from the refractive index of the first structures.
[0183] In the optical element 200 according to the present embodiment, a plurality of structures 41 each having a spherical or ellipsoidal shape and a filling member 45 having a refractive index different from that of the structures 41 are provided. This makes it possible to improve the characteristics with respect to obliquely incident light. It is possible to appropriately guide the incident light and realize an optical element having good optical characteristics.
[0184] <4. Application Examples> The imaging device 1 and the like can be applied to any type of electronic device equipped with an imaging function, such as a camera system such as a digital still camera or a video camera, or a mobile phone with an imaging function. Fig. 31 shows a schematic configuration of an electronic device 1000.
[0185] The electronic device 1000 includes, for example, a lens group 1001, an imaging device 1, a DSP (Digital Signal Processor) circuit 1002, a frame memory 1003, a display unit 1004, a recording unit 1005, an operation unit 1006, and a power supply unit 1007, which are interconnected via a bus line 1008.
[0186] The lens group 1001 captures incident light (image light) from a subject and forms an image on the imaging surface of the imaging device 1. The imaging device 1 converts the amount of incident light formed on the imaging surface by the lens group 1001 into an electrical signal on a pixel-by-pixel basis and supplies the signal to the DSP circuit 1002 as a pixel signal.
[0187] The DSP circuit 1002 is a signal processing circuit that processes a signal supplied from the imaging device 1. The DSP circuit 1002 outputs image data obtained by processing the signal from the imaging device 1. The frame memory 1003 temporarily holds the image data processed by the DSP circuit 1002 on a frame-by-frame basis.
[0188] The display unit 1004 is, for example, a panel-type display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel, and records image data of moving images or still images captured by the imaging device 1 in a recording medium such as a semiconductor memory or a hard disk.
[0189] The operation unit 1006 outputs operation signals for various functions of the electronic device 1000 in accordance with operations by a user. The power supply unit 1007 appropriately supplies various types of power to the DSP circuit 1002, the frame memory 1003, the display unit 1004, the recording unit 1005, and the operation unit 1006 as operating power sources to these power sources.
[0190] <5. Application Examples> (Example of application to moving objects) The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, a drone, a ship, a robot, etc.
[0191] FIG. 32 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a moving object control system to which the technology according to the present disclosure can be applied.
[0192] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 32, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also, as functional configurations of the integrated control unit 12050, a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053 are illustrated.
[0193] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.
[0194] The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as head lamps, back lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves or signals of various switches transmitted from a portable device that replaces a key may be input to the body system control unit 12020. The body system control unit 12020 receives the input of these radio waves or signals and controls the door lock device, power window device, lamps, and the like of the vehicle.
[0195] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture an image outside the vehicle and receives the captured image. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for a person, a car, an obstacle, a sign, or characters on a road surface, based on the received image.
[0196] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.
[0197] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing.
[0198] The microcomputer 12051 can calculate control target values for the driving force generating device, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the outside-of-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output a control command to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc.
[0199] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on the driver's operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.
[0200] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside-vehicle information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside-vehicle information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.
[0201] The audio / video output unit 12052 transmits at least one output signal of audio and image to an output device capable of visually or audibly notifying information to passengers in the vehicle or the outside of the vehicle. In the example of Fig. 32, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as the output device. The display unit 12062 may include at least one of an on-board display and a head-up display, for example.
[0202] FIG. 33 is a diagram showing an example of the installation position of the imaging unit 12031.
[0203] In FIG. 33, a vehicle 12100 has imaging units 12101, 12102, 12103, 12104, and 12105 as an imaging unit 12031.
[0204] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided at positions such as the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided at the front nose and the imaging unit 12105 provided at the upper part of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided at the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided at the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The images of the front acquired by the imaging units 12101 and 12105 are mainly used to detect a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.
[0205] 33 shows an example of the imaging ranges of the imaging units 12101 to 12104. An imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and an imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, an overhead image of the vehicle 12100 viewed from above is obtained by superimposing the image data captured by the imaging units 12101 to 12104.
[0206] At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera made up of a plurality of imaging elements, or may be an imaging element having pixels for detecting a phase difference.
[0207] For example, the microcomputer 12051 can extract, as a preceding vehicle, a three-dimensional object that is the closest three-dimensional object on the travel path of the vehicle 12100 and travels at a predetermined speed (for example, 0 km / h or more) in approximately the same direction as the vehicle 12100, by calculating the distance to each three-dimensional object in the imaging ranges 12111 to 12114 and the change over time of this distance (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104. Furthermore, the microcomputer 12051 can set a vehicle distance to be secured in advance in front of the preceding vehicle, and perform automatic brake control (including follow-up stop control) and automatic acceleration control (including follow-up start control). In this way, cooperative control can be performed for the purpose of automatic driving that travels autonomously without relying on the driver's operation.
[0208] For example, the microcomputer 12051 classifies and extracts three-dimensional object data on three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines a collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.
[0209] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured images of the imaging units 12101 to 12104. The recognition of such a pedestrian is performed, for example, by a procedure of extracting feature points in the captured images of the imaging units 12101 to 12104 as infrared cameras, and a procedure of performing pattern matching processing on a series of feature points that indicate the contour of an object to determine whether or not the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the captured images of the imaging units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating a pedestrian at a desired position.
[0210] An example of a mobile object control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to, for example, the imaging unit 12031 among the configurations described above. Specifically, for example, the imaging device 1 or the like can be applied to the imaging unit 12031. By applying the technology according to the present disclosure to the imaging unit 12031, it becomes possible to obtain a high-definition captured image. It becomes possible to perform high-precision control using the captured image in the mobile object control system.
[0211] (Application example to endoscopic surgery system) The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be applied to an endoscopic surgery system.
[0212] FIG. 34 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (the present technology) can be applied.
[0213] 34 shows a state in which an operator (doctor) 11131 is performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgery system 11000. As shown in the figure, the endoscopic surgery system 11000 is composed of an endoscope 11100, other surgical tools 11110 such as an insufflation tube 11111 and an energy treatment tool 11112, a support arm device 11120 that supports the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.
[0214] The endoscope 11100 is composed of a lens barrel 11101, a region of a predetermined length from the tip of which is inserted into a body cavity of a patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101. In the illustrated example, the endoscope 11100 is configured as a so-called rigid scope having a rigid lens barrel 11101, but the endoscope 11100 may be configured as a so-called flexible scope having a flexible lens barrel.
[0215] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is irradiated via the objective lens toward an observation target in the body cavity of the patient 11132. The endoscope 11100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.
[0216] An optical system and an image sensor are provided inside the camera head 11102, and reflected light (observation light) from an observation target is collected on the image sensor by the optical system. The observation light is photoelectrically converted by the image sensor to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to an observation image. The image signal is transmitted to a camera control unit (CCU) 11201 as RAW data.
[0217] The CCU 11201 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and performs overall control of the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102, and performs various types of image processing on the image signal, such as development processing (demosaic processing), for displaying an image based on the image signal.
[0218] Under the control of the CCU 11201, the display device 11202 displays an image based on an image signal that has been subjected to image processing by the CCU 11201.
[0219] The light source device 11203 is composed of a light source such as an LED (Light Emitting Diode), and supplies the endoscope 11100 with irradiation light when photographing an operation site or the like.
[0220] The input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiated light, magnification, focal length, etc.) of the endoscope 11100.
[0221] The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 for cauterizing tissue, incising, sealing blood vessels, etc. The insufflation device 11206 sends gas into the body cavity of the patient 11132 via the insufflation tube 11111 to inflate the body cavity for the purpose of securing the field of view of the endoscope 11100 and securing the working space of the surgeon. The recorder 11207 is a device capable of recording various information related to the surgery. The printer 11208 is a device capable of printing various information related to the surgery in various formats such as text, image, or graph.
[0222] The light source device 11203 that supplies irradiation light to the endoscope 11100 when photographing the surgical site can be composed of a white light source composed of, for example, an LED, a laser light source, or a combination of these. When the white light source is composed of a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so that the white balance of the captured image can be adjusted in the light source device 11203. In this case, it is also possible to capture images corresponding to each of the RGB colors in a time-division manner by irradiating the observation object with laser light from each of the RGB laser light sources in a time-division manner and controlling the driving of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter to the image sensor.
[0223] The light source device 11203 may be controlled to change the intensity of the light it outputs at predetermined time intervals. The driving of the image sensor of the camera head 11102 may be controlled in synchronization with the timing of the change in the light intensity to obtain images in a time-division manner, and the images may be synthesized to generate an image with a high dynamic range that is free of so-called blackout and whiteout.
[0224] The light source device 11203 may be configured to supply light of a predetermined wavelength band corresponding to the special light observation. In the special light observation, for example, by utilizing the wavelength dependency of light absorption in body tissue, a narrow band light is irradiated compared to the irradiated light (i.e., white light) during normal observation, and a predetermined tissue such as blood vessels on the mucous membrane surface is photographed with high contrast, so-called narrow band imaging is performed. Alternatively, in the special light observation, a fluorescent observation may be performed in which an image is obtained by fluorescence generated by irradiating an excitation light. In the fluorescent observation, it is possible to irradiate an excitation light to a body tissue and observe the fluorescence from the body tissue (autofluorescence observation), or to locally inject a reagent such as indocyanine green (ICG) into the body tissue and irradiate the body tissue with excitation light corresponding to the fluorescent wavelength of the reagent to obtain a fluorescent image. The light source device 11203 may be configured to supply narrow band light and / or excitation light corresponding to such special light observation.
[0225] FIG. 35 is a block diagram showing an example of the functional configuration of the camera head 11102 and the CCU 11201 shown in FIG.
[0226] The camera head 11102 has a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other by a transmission cable 11400 so as to be able to communicate with each other.
[0227] The lens unit 11401 is an optical system provided at the connection portion with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.
[0228] The imaging unit 11402 is composed of an imaging element. The imaging element constituting the imaging unit 11402 may be one (so-called single-plate type) or multiple (so-called multi-plate type). When the imaging unit 11402 is composed of a multi-plate type, for example, each imaging element may generate an image signal corresponding to each of RGB, and a color image may be obtained by combining the image signals. Alternatively, the imaging unit 11402 may be configured to have a pair of imaging elements for acquiring image signals for the right eye and the left eye corresponding to 3D (Dimensional) display. By performing 3D display, the surgeon 11131 can more accurately grasp the depth of the biological tissue in the surgical site. Note that when the imaging unit 11402 is composed of a multi-plate type, multiple lens units 11401 may be provided corresponding to each imaging element.
[0229] Furthermore, the imaging unit 11402 does not necessarily have to be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101, immediately behind the objective lens.
[0230] The driving unit 11403 is configured by an actuator, and moves the zoom lens and focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. This allows the magnification and focus of the image captured by the imaging unit 11402 to be appropriately adjusted.
[0231] The communication unit 11404 is configured by a communication device for transmitting and receiving various information to and from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 to the CCU 11201 via the transmission cable 11400 as RAW data.
[0232] Furthermore, the communication unit 11404 receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201, and supplies the control signal to the camera head control unit 11405. The control signal includes information on the imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value at the time of capturing the image, and / or information specifying the magnification and focus of the captured image.
[0233] The image capturing conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by a user, or may be automatically set by the control unit 11413 of the CCU 11201 based on an acquired image signal. In the latter case, the endoscope 11100 is equipped with a so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.
[0234] The camera head control unit 11405 controls the driving of the camera head 11102 based on a control signal received from the CCU 11201 via the communication unit 11404.
[0235] The communication unit 11411 is configured with a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.
[0236] Furthermore, the communication unit 11411 transmits, to the camera head 11102, a control signal for controlling the driving of the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, or the like.
[0237] The image processing unit 11412 performs various types of image processing on the image signal, which is RAW data sent from the camera head 11102 .
[0238] The control unit 11413 performs various controls related to imaging of the surgical site etc. by the endoscope 11100 and display of the captured image obtained by imaging the surgical site etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.
[0239] Further, the control unit 11413 causes the display device 11202 to display the captured image showing the surgical site, etc., based on the image signal that has been image-processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition techniques. For example, the control unit 11413 can recognize surgical tools such as forceps, specific living body parts, bleeding, mist when the energy treatment tool 11112 is used, etc., by detecting the shape and color of the edge of an object included in the captured image. When the control unit 11413 causes the display device 11202 to display the captured image, it may use the recognition result to superimpose various types of surgery support information on the image of the surgical site. By superimposing and presenting the surgery support information to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can proceed with the surgery reliably.
[0240] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable for communication of electrical signals, an optical fiber for optical communication, or a composite cable of these.
[0241] Here, in the illustrated example, communication is performed wired using a transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may also be performed wirelessly.
[0242] An example of an endoscopic surgery system to which the technology according to the present disclosure can be applied has been described above. Of the configurations described above, the technology according to the present disclosure can be suitably applied to, for example, the imaging unit 11402 provided in the camera head 11102 of the endoscope 11100. By applying the technology according to the present disclosure to the imaging unit 11402, it is possible to provide a high-definition endoscope 11100.
[0243] Although the present disclosure has been described above by way of the embodiment, modifications, application examples, and application examples, the present technology is not limited to the above-described embodiment, etc., and various modifications are possible. For example, although the above-described modifications have been described as modifications of the above-described embodiment, the configurations of the modifications can be appropriately combined.
[0244] In the above embodiments, an imaging device has been described as an example, but the photodetection device of the present disclosure may be, for example, a device that receives incident light and converts the light into an electric charge. The output signal may be a signal of image information or a signal of distance measurement information. The photodetection device (imaging device) may be applied to an image sensor, a distance measurement sensor, and the like. Note that the present disclosure is not limited to a back-illuminated image sensor, but may also be applied to a front-illuminated image sensor.
[0245] The photodetector according to the present disclosure may also be applied as a distance measuring sensor capable of measuring distances by a time-of-flight (TOF) method. The light receiving element (photoelectric conversion unit) of each pixel may be an avalanche photodiode (APD). The light receiving element may be configured, for example, by a single-photon avalanche diode (SPAD). The photodetector (imaging device) may also be applied as a sensor capable of detecting an event, for example, an event-driven sensor (also called an event vision sensor (EVS), an event driven sensor (EDS), a dynamic vision sensor (DVS), etc.).
[0246] A photodetector according to an embodiment of the present disclosure includes a first structure having a spherical or ellipsoidal shape, a first light guide member including a filling member provided around the first structure and having a refractive index different from that of the first structure, and a first photoelectric conversion element that photoelectrically converts light incident through the first light guide member. This allows the photodetector (imaging device) to appropriately guide obliquely incident light. It is possible to realize a photodetector that can improve characteristics for obliquely incident light.
[0247] The optical element according to an embodiment of the present disclosure includes a plurality of first structures having a spherical or ellipsoidal shape, and a filling member provided between the plurality of adjacent first structures and having a refractive index different from that of the first structures. This allows the optical element to appropriately guide incident light. It is possible to realize an optical element having good optical properties.
[0248] In addition, the effects described in this specification are merely examples and are not limited to the description, and other effects may be obtained. In addition, the present disclosure may have the following configurations. (1) A first light guide member including a first structure having a spherical or ellipsoidal shape and a filling member provided around the first structure and having a refractive index different from that of the first structure; a first photoelectric conversion element that performs photoelectric conversion on the light incident via the first light guiding member; A light detection device comprising: (2) The first light guide member has a second structure provided around the first structure and having a spherical or ellipsoidal shape. The light detection device according to (1) above. (3) The second structure has a refractive index different from the refractive index of the first structure. The optical detection device according to (2) above. (4) The first structure and the second structure have different sizes. The optical detection device according to (2) or (3) above. (5) The second structure is provided so as to be stacked on the first structure. The photodetector according to any one of (2) to (4). (6) The first structure includes a first portion and a second portion provided to cover the periphery of the first portion and having a refractive index different from that of the first portion. The photodetector according to any one of (1) to (5). (7) the first structure has a first portion and a second portion having a spherical or elliptical shape; At least a portion of the first portion is disposed within the second portion. The photodetector according to any one of (1) to (6). (8) a second light guide member including the first structure and the filling member; a second photoelectric conversion element that performs photoelectric conversion on the light incident via the second light guiding member; Further equipped with The density of the first structures in the first light guide member is different from the density of the first structures in the second light guide member. The optical detection device according to any one of (1) to (7). (9) The first structure includes a first portion having a hemispherical or semi-elliptical shape, and a second portion provided so as to be laminated with the first portion and having a hemispherical or semi-elliptical shape. The photodetector according to (8) above. (10) Further comprising an intermediate layer provided between the first portion and the second portion. The light detection device according to (9) above. (11) The first portion and the second portion include different materials. The optical detection device according to (9) or (10) above. (12) A second light guide member including a second structure having a spherical or ellipsoidal shape and the filling member provided around the second structure; a second photoelectric conversion element that performs photoelectric conversion on the light incident via the second light guiding member; Further equipped with The number of the first structures in the first light guiding member is different from the number of the second structures in the second light guiding member. The photodetector according to any one of (1) to (11) above. (13) The first structure and the second structure include different materials. The light detection device according to (12) above. (14) The refractive index of the first structure is higher than the refractive index of the filling member. The photodetector according to any one of (1) to (13) above. (15) The first structure has a size equal to or smaller than the wavelength range of visible light or equal to or smaller than the wavelength range of infrared light. The photodetector according to any one of (1) to (14) above. (16) A plurality of first structures each having a spherical or ellipsoidal shape; a filling member provided between adjacent first structures and having a refractive index different from that of the first structures; An optical element comprising: (17) Further comprising a plurality of second structures having a spherical or ellipsoidal shape; The filling member is provided between adjacent ones of the first structures and between adjacent ones of the second structures. The optical element according to (16) above. (18) The second structure has a refractive index different from the refractive index of the first structure. The optical element according to (17) above. (19) The second structure is provided so as to be stacked on the first structure. The optical element according to (17) or (18) above. (20) An optical system; a light detection device that receives light transmitted through the optical system; Equipped with The light detection device includes: A first light guide member including a first structure having a spherical or ellipsoidal shape and a filling member provided around the first structure and having a refractive index different from that of the first structure; a first photoelectric conversion element that performs photoelectric conversion on the light incident via the first light guiding member; have electronic equipment. [Explanation of symbols]
[0249] Reference Signs List 1: imaging device, 10: semiconductor layer, 12: photoelectric conversion section, 25: filter, 41: structure, 45: filling member, 50: light guiding section, 60: optical layer, 65: intermediate layer, 70: insulating layer, 120: substrate, 200: optical element.
Claims
1. A first light guide member including a first structure having a spherical or ellipsoidal shape and a filling member provided around the first structure and having a refractive index different from that of the first structure; a first photoelectric conversion element that performs photoelectric conversion on the light incident via the first light guiding member; A light detection device comprising:
2. The first light guide member has a second structure provided around the first structure and having a spherical or ellipsoidal shape.
2. The optical detection device according to claim 1.
3. The second structure has a refractive index different from the refractive index of the first structure.
3. The optical detection device according to claim 2.
4. The first structure and the second structure have different sizes.
3. The optical detection device according to claim 2.
5. The second structure is provided so as to be stacked on the first structure.
3. The optical detection device according to claim 2.
6. The first structure includes a first portion and a second portion provided to cover the periphery of the first portion and having a refractive index different from that of the first portion.
2. The optical detection device according to claim 1.
7. the first structure has a first portion and a second portion having a spherical or elliptical shape; At least a portion of the first portion is disposed within the second portion.
2. The optical detection device according to claim 1.
8. a second light guide member including the first structure and the filling member; a second photoelectric conversion element that performs photoelectric conversion on the light incident via the second light guiding member; Further equipped with The density of the first structures in the first light guide member is different from the density of the first structures in the second light guide member.
2. The optical detection device according to claim 1.
9. The first structure includes a first portion having a hemispherical or semi-elliptical shape, and a second portion provided so as to be stacked with the first portion and having a hemispherical or semi-elliptical shape.
9. The optical detection device according to claim 8.
10. The device further includes an intermediate layer disposed between the first portion and the second portion.
10. The optical detection device according to claim 9.
11. The first portion and the second portion include different materials.
10. The optical detection device according to claim 9.
12. a second light guide member including a second structure having a spherical or ellipsoidal shape and the filling member provided around the second structure; a second photoelectric conversion element that performs photoelectric conversion on the light incident via the second light guiding member; Further equipped with The number of the first structures in the first light guiding member is different from the number of the second structures in the second light guiding member.
2. The optical detection device according to claim 1.
13. The first structure and the second structure include different materials.
13. The optical detection device of claim 12.
14. The refractive index of the first structure is higher than the refractive index of the filling member.
2. The optical detection device according to claim 1.
15. The first structure has a size equal to or smaller than the wavelength range of visible light or equal to or smaller than the wavelength range of infrared light.
2. The optical detection device according to claim 1.
16. A plurality of first structures each having a spherical or ellipsoidal shape; a filling member provided between adjacent first structures and having a refractive index different from that of the first structures; An optical element comprising:
17. Further comprising a plurality of second structures having a spherical or ellipsoidal shape; The filling member is provided between adjacent ones of the first structures and between adjacent ones of the second structures.
17. The optical element according to claim 16.
18. The second structure has a refractive index different from the refractive index of the first structure.
18. The optical element according to claim 17.
19. The second structure is provided so as to be stacked on the first structure.
18. The optical element according to claim 17.
20. An optical system; a light detection device that receives light transmitted through the optical system; Equipped with The light detection device includes: A first light guide member including a first structure having a spherical or ellipsoidal shape and a filling member provided around the first structure and having a refractive index different from that of the first structure; a first photoelectric conversion element that performs photoelectric conversion on the light incident via the first light guiding member; have electronic equipment.
Citation Information
Patent Citations
Meta optical element and electronic apparatus including the same
JP2021140152A