Light emitting device, and base

Abstract

To provide a light emitting device that is excellent in heat dissipation properties.SOLUTION: A light emitting device comprises: a semiconductor laser element; and a base in which a bottom part including metal as a chief material and a frame part including ceramics as a chief material are joined to each other. The base has an arrangement surface on which the semiconductor laser element is arranged, a frame that surrounds the periphery of the arranged semiconductor laser element, and first and second electrode layers for electrically connecting the semiconductor laser element. The bottom part has the arrangement surface. The frame part has a joint surface that is joined to the arrangement surface, an inside surface that intersects the joint surface and forms a frame larger than the arrangement surface, and an inside surface that intersects the joint surface and forms a frame smaller than the arrangement surface. The second electrode layer is provided on a plane that intersects at least part of the inside surface of the frame part forming the frame smaller than the arrangement surface, and that is different from the joint surface.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a light emitting device and a base. [Background technology]

[0002] Conventionally, light-emitting element packages have been known in which a light-emitting element such as an LED element or a semiconductor laser element is disposed on the bottom surface of a base having a frame and a bottom surface. In addition, several materials can be used for the base that becomes the package body, one of which is ceramic. Patent Document 1 discloses a light-emitting element package in which a light-emitting element is disposed on a package body whose surface is formed of a ceramic layer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2014-68013 Summary of the Invention [Problem to be solved by the invention]

[0004] On the other hand, since light emitting elements such as semiconductor laser elements generate heat, heat dissipation must also be considered when creating a package. The light emitting element package in Patent Document 1 discloses a structure in which the light emitting element is disposed on a ceramic, but there is room for improvement in terms of heat dissipation. [Means for solving the problem]

[0005] A light emitting device according to the present invention includes a semiconductor laser element, a bottom portion made mainly of metal, a frame portion made mainly of ceramic to which the bottom portion is joined, and a base portion having a first electrode layer and a second electrode layer electrically connected to the first electrode layer, the bottom portion having an arrangement surface on which the semiconductor laser element is arranged, the frame portion having an upper surface, a lower surface, a bonding surface that is provided below the upper surface and above the lower surface and bonds to a part of the arrangement surface, a first inner surface that intersects with the bonding surface and extends downward from the bonding surface, the first inner surface that forms a rectangular first frame larger than the arrangement surface, and a second inner surface that intersects with the bonding surface. the first frame and the second frame having a rectangular cross section; and a plane intersecting at least a part of the second inner side surface above the bonding surface, the frame portion having an opening defined by the first frame and an opening defined by the second frame, the frame portion having an opening extending from the top surface to the bottom surface of the frame portion, the second electrode layer being provided on the plane of the frame portion, the first electrode layer and the second electrode layer being electrically connected to the semiconductor laser element, and the semiconductor laser element being surrounded by the second frame in a top view.

[0006] Further, a light emitting device according to the present invention includes a semiconductor laser element, a bottom portion having an arrangement surface on which the semiconductor laser element is arranged, a frame portion to which the bottom portion is joined, a first electrode layer, and a second electrode layer electrically connected to the first electrode layer, wherein the bottom portion has a higher thermal conductivity than the frame portion, and the frame portion has an upper surface, a lower surface, a joining surface that is provided below the upper surface and above the lower surface and joins to a part of the arrangement surface, a first inner surface that intersects with the joining surface and extends downward from the joining surface, forming a rectangular first frame that is larger than the arrangement surface, and a second inner surface that intersects with the joining surface and extends downward from the joining surface, forming a rectangular first frame that is larger than the arrangement surface, and the first frame and the second frame having a rectangular cross section; and a plane intersecting at least a part of the second inner side surface above the bonding surface, the frame portion having an opening defined by the first frame and an opening defined by the second frame, the frame portion having an opening extending from the top surface to the bottom surface of the frame portion, the second electrode layer being provided on the plane of the frame portion, the first electrode layer and the second electrode layer being electrically connected to the semiconductor laser element, and the semiconductor laser element being surrounded by the second frame in a top view.

[0007] Further, a base according to the present invention includes a bottom made mainly of metal, a frame made mainly of ceramic to which the bottom is joined, a first electrode layer, and a second electrode layer electrically connected to the first electrode layer, the bottom has an arrangement surface on which a semiconductor laser element is arranged, and the frame has an upper surface, a lower surface, a bonding surface that is provided below the upper surface and above the lower surface and bonds to a part of the arrangement surface, a first inner surface that intersects with the bonding surface and extends downward from the bonding surface, forming a rectangular first frame that is larger than the arrangement surface, and a second electrode layer that is electrically connected to the first electrode layer, the bottom having an arrangement surface on which a semiconductor laser element is arranged, and the frame has an upper surface, a lower surface, a bonding surface that is provided below the upper surface and above the lower surface and bonds to a part of the arrangement surface, The frame portion has a second inner side surface that intersects with the mating surface and extends upward from the joint surface to form a rectangular second frame that is smaller than the first frame, and a plane that intersects with at least a portion of the second inner side surface above the joint surface, and the frame portion has openings extending from the upper surface to the lower surface of the frame portion, including an opening defined by the first frame and an opening defined by the second frame, the second electrode layer is provided on the plane of the frame portion, and the bottom portion covers the opening of the frame portion defined by the second frame from the lower surface side.

[0008] Further, a base according to the present invention includes a bottom having an arrangement surface on which a semiconductor laser element is arranged, a frame to which the bottom is joined, a first electrode layer, and a second electrode layer electrically connected to the first electrode layer, the bottom having a higher thermal conductivity than the frame, the frame including an upper surface, a lower surface, a joining surface that is disposed below the upper surface and above the lower surface and joins with a part of the arrangement surface, a first inner surface that intersects with the joining surface and extends downward from the joining surface, forming a rectangular first frame that is larger than the arrangement surface, and a first inner surface that intersects with the joining surface and extends downward from the joining surface, the first inner surface being larger than the arrangement surface, and and a plane that intersects with at least a part of the second inner side above the joint surface to form a rectangular second frame that is smaller than the first frame, and a plane that intersects with at least a part of the second inner side above the joint surface, the frame portion has openings extending from the upper surface to the lower surface of the frame portion, including an opening defined by the first frame and an opening defined by the second frame, the second electrode layer is provided on the plane of the frame portion, and the bottom portion covers the opening of the frame portion defined by the second frame from the lower surface side.

[0009] Moreover, the light-emitting device according to the embodiment includes a semiconductor laser element, a base having a bottom made mainly of metal and a frame made mainly of ceramic joined thereto, the base having an arrangement surface on which the semiconductor laser element is arranged, a frame surrounding the arranged semiconductor laser element, and first and second electrode layers for electrically connecting the semiconductor laser element, the bottom having the arrangement surface, the frame having a bonding surface joining the arrangement surface, an inner side surface intersecting with the bonding surface to form a frame larger than the arrangement surface, and an inner side surface intersecting with the bonding surface to form a frame smaller than the arrangement surface, the second electrode layer being provided on a plane different from the bonding surface in the frame, which intersects with at least a part of the inner side surface forming a frame smaller than the arrangement surface. Effect of the Invention

[0010] According to the present invention, a light emitting device with excellent heat dissipation properties can be provided. [Brief description of the drawings]

[0011] [Figure 1] FIG. 1 is a schematic perspective view of the light emitting device according to the first embodiment. [Diagram 2] FIG. 2 is a top view for explaining the internal structure of the light emitting device according to the first embodiment. [Diagram 3] FIG. 3 is a cross-sectional view of the light emitting device taken along a line connecting FIG. [Figure 4A] FIG. 4A is a schematic perspective view for explaining the method for manufacturing the light emitting device according to the first embodiment. [Figure 4B] FIG. 4B is a cross-sectional view taken along a line connecting BI-BI, illustrating the manufacturing method of the light emitting device according to the first embodiment. [Figure 4C] FIG. 4C is a cross-sectional view taken along a line connecting BII-BII for explaining the manufacturing method of the light emitting device according to the first embodiment. [Figure 4D] FIG. 4D is a schematic perspective view of the bottom part of the light emitting device according to the first embodiment. [Figure 4E] FIG. 4E is a top view of the frame of the light emitting device according to the first embodiment. [Figure 4F] FIG. 4F is a bottom view of the frame of the light emitting device according to the first embodiment. [Figure 5A] FIG. 5A is a schematic perspective view for explaining the method for manufacturing the light emitting device according to the first embodiment. [Figure 5B] FIG. 5B is a cross-sectional view taken along a line connecting BI-BI, illustrating the method for manufacturing the light emitting device according to the first embodiment. [Figure 5C] FIG. 5C is a cross-sectional view taken along a line connecting BII-BII for explaining the manufacturing method of the light emitting device according to the first embodiment. [Figure 6A] FIG. 6A is a schematic perspective view for explaining the method for manufacturing the light emitting device according to the first embodiment. [Figure 6B] FIG. 6B is a cross-sectional view taken along a line connecting BI-BI, illustrating the manufacturing method of the light emitting device according to the first embodiment. [Figure 6C] FIG. 6C is a cross-sectional view taken along a line connecting BII-BII for explaining the manufacturing method of the light emitting device according to the first embodiment. [Figure 7A] FIG. 7A is a schematic perspective view for explaining the method for manufacturing the light emitting device according to the first embodiment. [Figure 7B] FIG. 7B is a cross-sectional view taken along a line connecting BI-BI, illustrating the method for manufacturing the light emitting device according to the first embodiment. [Figure 7C] FIG. 7C is a cross-sectional view taken along a line connecting BII-BII for explaining the manufacturing method of the light emitting device according to the first embodiment. [Figure 8A] FIG. 8A is a schematic perspective view for explaining the method for manufacturing the light emitting device according to the first embodiment. [Figure 8B] FIG. 8B is a cross-sectional view taken along a line connecting BI-BI, illustrating the manufacturing method of the light emitting device according to the first embodiment. [Figure 8C] FIG. 8C is a cross-sectional view taken along a line connecting BII-BII for explaining the manufacturing method of the light emitting device according to the first embodiment. [Figure 9A]FIG. 9A is a schematic perspective view for explaining the method for manufacturing the light emitting device according to the first embodiment. [Figure 9B] FIG. 9B is a cross-sectional view taken along a line connecting BI-BI, illustrating the manufacturing method of the light emitting device according to the first embodiment. [Figure 9C] FIG. 9C is a cross-sectional view taken along a line connecting BII-BII for explaining the manufacturing method of the light emitting device according to the first embodiment. [Figure 9D] FIG. 9D is a top view of the substrate of the light emitting device according to the first embodiment. [Figure 10A] FIG. 10A is a schematic view for explaining the method for manufacturing the light emitting device according to the first embodiment. [Figure 10B] FIG. 10B is a cross-sectional view taken along a line connecting BI-BI, illustrating the manufacturing method of the light emitting device according to the first embodiment. [Figure 10C] FIG. 10C is a cross-sectional view taken along a line connecting BII-BII for explaining the manufacturing method of the light emitting device according to the first embodiment. [Figure 11] FIG. 11 is a cross-sectional view of the light emitting device according to the second embodiment. [Figure 12A] FIG. 12A is a schematic perspective view of the bottom part of the light emitting device according to the second embodiment. [Figure 12B] FIG. 12B is a schematic perspective view of the bottom part of the light emitting device according to the second embodiment. [Figure 13] FIG. 13 is a top view of the substrate of the light emitting device according to the second embodiment. [Figure 14] FIG. 14 is a cross-sectional view of a light emitting device according to a first modified example. [Figure 15] FIG. 15 is a cross-sectional view of a light emitting device according to a second modified example. [Figure 16] FIG. 16 is a schematic perspective view of the bottom of a light emitting device according to a second modified example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] The embodiments for carrying out the present invention will be described below with reference to the drawings. However, the embodiments described below are intended to embody the technical ideas of the present invention and are not intended to limit the present invention. Furthermore, in the following description, the same names and symbols indicate the same or similar components, and detailed description will be omitted as appropriate. Note that the sizes and positional relationships of the components shown in each drawing may be exaggerated to clarify the description.

[0013] First Embodiment Fig. 1 is a schematic diagram of the light emitting device 1 according to the first embodiment, Fig. 2 is a top view for explaining the internal structure of the base of the light emitting device 1, and Fig. 3 is a cross-sectional view in the direction of the arrow on the straight line connecting III-III in Fig. 1. In Fig. 2, in order to show the internal structure, the cover part 120, the adhesive part 130, and the lens member 140 are shown with dashed lines, and the parts that can be seen through these members are shown with solid lines. In addition, in order to avoid the figure becoming complicated, the wire 180 shown in Fig. 3 is omitted in Fig. 2.

[0014] The light emitting device 1 is a device in which light emitted from a plurality of semiconductor laser elements 170 is reflected by the light reflecting surface of the light reflecting member 150, passes through the lens member 140, and is emitted to the outside. As shown in FIG. 2, three submounts 160 are arranged with the semiconductor laser elements 170 arranged thereon, and light reflecting members 150 are arranged corresponding to each semiconductor laser element 170. Each semiconductor laser element 170 emits light to the corresponding light reflecting member 150, and the light reflecting member 150 reflects the light from the semiconductor laser element 170 toward the lens member 140. The light emitting device 1 also has a package that emits light, and a mounting board on which the package is mounted. Note that only the package may be regarded as the light emitting device 1.

[0015] The light emitting device 1 has a substrate 100 as a mounting substrate, and a base 110, a lid 120, an adhesive 130, a lens member 140, a light reflecting member 150, a submount 160, a semiconductor laser element 170, and a wire 180 as components constituting a package. In addition, in a closed space formed by bonding the base 110 and the lid 120, a plurality of light reflecting members 150 and submounts 160 each having a semiconductor laser element 170 arranged thereon are arranged. Furthermore, a wire 180 is stretched to electrically connect the semiconductor laser elements 170 arranged on the base 110. In addition, as shown in FIG. 3, the base 110 has a frame 111 and a bottom 118.

[0016] Substrate 100 is bonded to at least either frame portion 111 or bottom portion 118. Frame portion 111 is bonded to lid portion 120 on the side opposite to the bonding surface with substrate 100. Lid portion 120 and lens member 140 are bonded via an adhesive, and a gap is generated between lid portion 120 and lens member 140 by adhesive portion 130 formed when the adhesive hardens. Light emitting device 1 will be described below while explaining the manufacturing process of light emitting device 1.

[0017] 4A to 10A are schematic diagrams for explaining each step until the light emitting device 1 is manufactured. Also, FIGS. 4B to 10B and 4C to 10C are cross-sectional views in each step corresponding to FIGS. 4A to 10A. FIGS. 4B to 10B are cross-sectional views corresponding to the straight line connecting BI-BI shown in FIG. 4A. FIGS. 4C to 10C are cross-sectional views corresponding to the straight line connecting BII-BII shown in FIG. 4A. S1 and S2 shown by dotted lines are auxiliary lines for showing the correspondence of the orientation of the light emitting device 2 between the drawings, and are not components of the light emitting device 2. Also, the auxiliary lines in the cross-sectional views represent the cross-sectional view when the side on which the auxiliary lines are drawn in the schematic diagrams of FIGS. 4A to 10A is viewed as the front. For example, the cross-sectional view of the base 110 with the S1 line drawn in FIG. 5B can be said to be a cross-sectional view of the straight line corresponding to the straight line connecting BI-BI in FIG. 4A with S1 viewed as the front with respect to the base 110 in FIG. 5A.

[0018] 4A and 4D, the frame 111 and the bottom 118 constituting the base 110 are prepared. The bottom 118 may be made of a metal such as Cu or Al, and the frame 111 may be made of a ceramic such as alumina (Al2O3) or AlN. The materials are not limited to these, but at least the bottom 118 has better heat dissipation properties than the frame 111, and the bottom 118 has a higher thermal conductivity than the frame 111.

[0019] The bottom 118 has a shape in which the four corners of a rectangle are rounded at the bonding surface that is bonded to the substrate 100 and at the arrangement surface on which the light reflecting member 150, the submount 160, and the semiconductor laser element 170 are arranged. In addition, the thickness from the bonding surface to the arrangement surface is uniform. In the present invention, a shape in which the corners of a rectangle are processed by rounding, chamfering, corner removal, rounding, etc. is also called a rectangle. Similarly, a shape in which one or more corners of a polygon are processed by rounding, etc. is also called a polygon. In addition, when each side of a rectangle or polygon is processed at the corner, the processed part is also considered to be a side. In addition, the bonding surface that is bonded to the substrate 100 is considered to be a bottom surface. The shapes of the bottom surface and the arrangement surface are not limited to this.

[0020] The frame 111 has a first electrode layer 112 on the bottom surface that is bonded to the substrate 100. The first electrode layer 112 is made of, for example, a metal layer, and is bonded to the metal film 103 of the substrate 100. Power is supplied to the semiconductor laser element 170 via the metal film 103. The frame 111 has a step on the inside of the frame, and the flat surface on the bottom side of the step becomes the bonding surface 113 with the bottom 118. For convenience, the side closer to the substrate 100 and the opposite side of the two opposing flat surfaces are called the bottom surface and the upper surface, respectively. Alternatively, the side closer to the lens member 140 is called the top surface and the opposite side is called the bottom surface. The frame 111 in FIG. 4A is arranged with the top and bottom surfaces turned upside down.

[0021] FIG. 4E is a top view of the frame 111, and FIG. 4F is a bottom view of the frame 111. The frame 111 has a bonding surface 113 on the stepped portion plane as viewed from the bottom, and a second electrode layer 114 for electrically connecting to the semiconductor laser element 170 is provided on the stepped portion plane as viewed from the top. The second electrode layer 114 is electrically connected to the first electrode layer 112, for example, through a via hole. The second electrode layer 114 is made of, for example, a metal layer and is disposed on a ceramic layer, so that it is not exposed on the bottom surface of the stepped portion. In addition, the stepped portion forms all four sides of the frame as viewed from the bottom, while the stepped portion is provided only on three sides of the frame as viewed from the top, and is not provided on the remaining side except for an end portion overlapping with the two sides at both ends. In other words, the area having the stepped portion is different when viewed from the top and when viewed from the bottom. Since bonding surface 113 at the step portion is bonded to bottom portion 118, the step portion as viewed from the bottom is provided along the entire periphery. On the other hand, the planar surface of the step portion as viewed from the top does not necessarily have to be provided along the entire periphery as long as an area for providing the second electrode layer is secured.

[0022] In addition, the width of the joint surface 113 is larger for the side opposite to the side on which the second electrode layer 114 is not provided than for the other sides. On the other hand, the width of the joint surface of the frame portion 111 that is joined to the substrate 100 is designed to be the same for the side on which the second electrode layer 114 is not provided and the side opposite to that side. In other words, the shortest distance between the two side surfaces that intersect with the joint surface of the frame portion 111 with the substrate 100 is made equal at the corresponding positions of the opposing sides. Note that, "equal" refers to a relationship in which the difference between two or more values ​​to be compared is within the range of error due to design tolerance. In this way, the force applied to the base portion 110 when it is joined to the substrate 100 by soldering can be balanced. Note that the corresponding positions of the opposing sides refer to the position of one side and the position of the other side that is the shortest distance from that position when the two opposing sides are in a parallel relationship.

[0023] Next, as shown in FIG. 5A, the joint surface 113 of the frame 111 and the bottom 118 are joined. For example, a silver solder containing Ag as a main component and Cu can be used for the joint, but other metal solders can also be used. As shown in FIG. 4A, the frame 111 is attached with silver solder to the joint surface with the bottom surface to be joined to the substrate 100 facing up, and the bottom 118 is fitted into the frame of the frame 111 in a state where the silver solder is melted by heating. The silver solder is then cooled to join the frame 111 and the bottom 118, thereby forming the base 110. The joint area between the frame 111 and the bottom 118 is Ni-plated and then silver solder is applied.

[0024] 5B and 5C, the size of the joint surface of the bottom 118 that joins with the frame 111 is smaller than the frame formed by the inner side surface 115 that intersects with the bottom surface of the frame 111, and is included in the frame. Furthermore, the shapes of the inner side surface 115 of the frame 111 and the side surface 119 of the bottom 118 are designed so that the arrangement surface of the bottom 118 joins with the joint surface 113 at the step portion of the frame 111. In the light emitting device 1 according to the first embodiment, the length from the bottom surface of the frame 111 to the joint surface 113 and the height of the bottom 118 are designed to be the same, and the bottom 118 is designed to fit into the frame formed by the inner side surface 115 that intersects with the joint surface 113.

[0025] Also, a gap is generated between the inner surface 115 and the side surface 119. As described above, the frame 111 can be formed of ceramic, but the degree of sintering during manufacturing is not always the same. For this reason, there may be a difference in shape and size between the manufactured frame parts 111. In manufacturing the light emitting device 1, the shape of the frame 111 and the bottom part 118 is designed so that a gap of about 0.1 mm is formed between the frame part 111 and the bottom part 118, taking into consideration the design tolerance. It is acceptable to design the frame part 111 to have a gap of 0.1 mm or more, or to design the gap to be 0.1 mm or less. It is preferable to set the gap between 0.1 mm and 0.5 mm. This allows the bottom part 118 to be appropriately joined to the joint surface of the frame part 111, and also allows the heat dissipation of the bottom part 118 to be improved, so that the base part 110 with excellent heat dissipation properties can be formed.

[0026] The size of the plane of bottom 118 that joins with joining surface 113 is larger than the outer frame of the space formed by the step portion. Specifically, the size of the plane of bottom 118 that joins with joining surface 113 of frame portion 111 is larger than the frame formed by inner side surface 116 at the inner end of joining surface 113, and bottom 118 covers this frame.

[0027] In addition, the relationship between the frame formed by the inner side surface 115 at the inner end of the bottom surface of the frame portion 111 and the frame formed by the inner side surface 117 at the inner end of the upper surface of the frame portion 111 is such that the inner side surface 115 is larger than the inner side surface 117 when viewed in the S1 direction, and the inner sides 115 and 117 are equal in size when viewed in the S2 direction. In the S1 direction, there is a side that does not have a step portion for the second electrode layer when viewed from above, and the lower surface is larger than the upper surface in order to form a bonding surface for this side. In the S2 direction, since both sides have a step portion for the second electrode layer, the bonding surface can be formed by utilizing this step portion, so there is no need to make the lower surface larger.

[0028] In addition, the frame portion 111 has a first electrode layer on its bottom surface on both sides when viewed from the S2 direction. From the viewpoint of heat dissipation, it can be said that the bottom portion 118 is preferably large, but if the width of the bottom portion is narrow, there is a concern that the solder may contact or electrically connect both the first electrode layer and the bottom portion 118 when soldering. The inner surfaces 115 and 117 do not need to be aligned when viewed from the S2 direction, but the size of the inner surface 115 is set at a position that ensures a predetermined distance from the first electrode layer. It is preferable that the position of the inner end on the bottom surface is determined with a gap of about 0.3 mm from the first electrode layer having a width of about 0.5 mm. The first electrode layer 112 and the second electrode layer 114 are electrically connected through a conductive portion provided inside the frame portion 111.

[0029] Here, we will provide additional information regarding the determination of the structure of the frame 111 and the bottom 118. From the viewpoint of heat dissipation, it is desirable for the bottom 118 to be made of a material with good heat dissipation properties so that heat is diffused from the position where the semiconductor laser element 170, which is the main heat source, is disposed, and therefore metal such as Cu is preferable rather than ceramic. It is also preferable that it has a certain degree of size, and the part exposed as the placement surface is preferably made of metal. Furthermore, in order to bond to the substrate 100 and efficiently dissipate heat from there to the substrate 100, it is preferable not to sandwich a material with poor heat dissipation properties between the placement surface and the bonding surface with the substrate 100.

[0030] From the viewpoints of strength and shape stability when the light emitting device 1 is used, it is preferable that the outer frame of the base is made of ceramic. Furthermore, in order to provide a metal layer for electrically connecting the semiconductor laser element, it is necessary to provide a step in part of the ceramic frame. For this reason, the base 110 of the light emitting device 1 must at least include a frame surrounding the periphery, a bottom portion for disposing the semiconductor laser, and a step for providing the metal layer.

[0031] The step does not need to be provided around the entire circumference of the frame, and the area where the step is provided can be adjusted as appropriate depending on the number of semiconductor laser elements 170 arranged in the light emitting device 1, the combination when multiple semiconductor laser elements 170 are arranged, etc. For example, it may be sufficient to provide the step along one or two sides of the frame, or it may be necessary to provide the step around the entire circumference. The combination when multiple semiconductor laser elements 170 are arranged may be, for example, whether multiple semiconductor laser elements of the same color and performance are arranged, or whether semiconductor laser elements of different colors are arranged.

[0032] Taking these factors into consideration, the frame 111 and the bottom 118 of the light emitting device 1 are formed of ceramic while the bottom 118 is made of metal, and a partition between the frame and the bottom is determined to improve heat dissipation. Furthermore, a gap is provided in consideration of the design tolerance of the ceramic. Therefore, it is possible to provide a base 110 with better heat dissipation properties than one in which the arrangement surface of the base 110 on which the semiconductor laser element 170 is arranged is made of ceramic.

[0033] 6A, the light reflecting member 150 and the submount 160 on which the semiconductor laser element 170 is arranged are bonded to the arrangement surface of the formed base 110. The positions at which the light reflecting member 150 and the submount 160 are arranged are determined based on the positions based on the frame 111, not on the positions based on the bottom 118. In other words, the light reflecting member 150 and the submount 160 are arranged so that the distance and coordinates from a specific position on the frame 111 match, not the distance and coordinates from a specific position on the bottom 118.

[0034] As described above, a gap is generated between the frame 111 and the bottom 118, so the bottom 118 is not fixed by the frame formed by the frame 111. Therefore, the bottom 118 may move when they are joined by brazing. For example, in the light emitting device 1, the shape of the frame of the frame 111 and the shape of the joint surface of the bottom 118 are similar to each other, but as a result of joining, their respective center points may not match, or the distances from the frame 111 to the bottom 118 may not be uniform. Therefore, it is preferable to adjust the position of the bottom 118 so that it is aligned with the frame 111, so that it is easy to align the light emitting devices 1 to be manufactured even if the bottom 118 is misaligned. Note that the smaller the gap between the frame 111 and the bottom 118 described above, the smaller the misalignment due to movement.

[0035] The light reflecting member 150 has a light reflecting surface on at least one side. Since the light reflecting member 150 receives the radiated light from the semiconductor laser element 170, it is preferable that a material that is resistant to heat is used as a main material, and a material with high reflectance is used for the light reflecting surface. As a main material, glass such as quartz or BK7 (borosilicate glass), metal such as aluminum, or Si can be used, and a metal or a dielectric multilayer film can be used for the light reflecting surface. Note that the light emitting device 1 may have a light reflecting member 150 having a plurality of light reflecting surfaces as necessary, or may have a light reflecting member other than the light reflecting member 150. Also, one light reflecting member 150 is provided for each semiconductor laser element 170, but one light reflecting member 150 may be provided for three semiconductor laser elements 170, or one light reflecting member may be provided for a plurality of semiconductor laser elements.

[0036] Aluminum nitride or silicon carbide can be used as the submount 160. A metal film is provided on the submount 160, and the semiconductor laser element 170 is fixed to the submount 160 by a conductive layer such as Au-Sn.

[0037] The semiconductor laser element 170 is bonded to the submount 160 at its bottom surface, and emits light from the side surface closer to the light reflecting member 150. The laser light emitted from the semiconductor laser element 170 has an elliptical far-field pattern (hereinafter referred to as "FFP") in a plane parallel to the light emitting end surface, in which the length in the stacking direction of multiple semiconductor layers including the active layer is longer than the length in the direction perpendicular thereto. The FFP here is a measurement of the light intensity distribution of the emitted light in a plane that is some distance away from the light emitting end surface of the semiconductor laser element and parallel to the light emitting end surface. The shape of the FFP is specified as the shape of the main part of the light. Here, the main part of the light from the laser element is defined as a shape that is 1 / e away from the peak intensity value of the laser light. 2 This refers to that portion of the intensity range up to where it drops to any intensity such as 0.01, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 0.10, 0.11, 0.12, 0.13, 0.14, 0.15, 0.16, 0.17, 0.18, 0.

[0038] The light emitting device 1 has one or more semiconductor laser elements 170, and three semiconductor laser elements 170 are arranged as shown in Figs. 6A to 6C. The number of semiconductor laser elements 170 arranged is not limited to this and may be one or more. Furthermore, the light emitted by these semiconductor laser elements 170 may be the same color or different colors. For example, the three semiconductor laser elements 170 of the light emitting device 1 may be composed of a first semiconductor laser element that emits red light, a second semiconductor laser element that emits green light, and a third semiconductor laser element that emits blue light.

[0039] The emission peak wavelength of the red light is, for example, within a range of 605 nm to 750 nm. Examples of the semiconductor laser element emitting red light include those including InAlGaP-based, GaInP-based, GaAs-based, and AlGaAs-based semiconductors. The emission peak wavelength of the green light is, for example, within a range of 495 nm to 570 nm. Examples of the semiconductor laser element emitting green laser light include those including nitride semiconductors. The emission peak wavelength of the blue light is, for example, within a range of 420 nm to 494 nm. Examples of the semiconductor laser element emitting blue laser light include those including nitride semiconductors. Examples of the nitride semiconductors that can be used are GaN, InGaN, and AlGaN.

[0040] 7A, a wire is bonded to the second electrode layer 114 of the frame portion 111 and the semiconductor laser element 170, thereby electrically connecting the second electrode layer 114 and the semiconductor laser element 170. For example, a wire bonding device is used to bond one end of an Au wire to the semiconductor laser element 170 and the other end to the second electrode layer 114. When a protection element such as a Zener diode is disposed on the submount 160, the protection element is also electrically connected by the wire 180.

[0041] As shown in FIGS. 6A and 6B, the step portion for providing the second electrode layer 114 is provided over three sides in a top view, and is not provided on one side except for the overlapping portion with the other side. The one side is a side on which the light reflecting member 150 exists between the semiconductor laser element 170 or the submount 160 and the side, and is a side located on the opposite side to the semiconductor laser element 170 across the light reflecting member 150. The light emitted from the semiconductor laser element 170 is reflected by the light reflecting member 150 and travels upward. As is clear from FIGS. 7A and 7B, if a step portion is provided on the one side and the second electrode layer 114 on that side is electrically connected to the semiconductor laser element 170 with a wire, the wire will exist in the light traveling direction and will block the light. Therefore, by not providing a step portion for the second electrode layer 114 on the side of the light reflecting member 150, the second electrode layer 114 can be appropriately arranged, which contributes to reducing the size of the light emitting device 1.

[0042] 8A, frame 111 of base 110 and lid 120 are joined together to hermetically seal the space in which semiconductor laser element 170 is disposed. For example, a metal film is provided on the lower surface of lid 120 in an area to be joined to base 110, and base 110 and lid 120 are joined and fixed together via AuSn or the like. Since semiconductor laser element 170 is disposed in this closed space, it is possible to prevent organic matter and the like from collecting on the light-emitting end face of semiconductor laser element 170.

[0043] The cover 120 may be, for example, glass with a metal film or sapphire with a metal film, and preferably sapphire with a metal film. When light spreads, the lens portion that passes the light becomes larger, but sapphire has a relatively high refractive index and can suppress the spread of light, so the size of the lens portion of the lens member 140 can be suppressed. In addition, since it is relatively strong and unlikely to break, the airtight reliability of the closed space can be ensured.

[0044] In Fig. 9A, the base 110 is mounted on the substrate 100. The substrate 100 is joined to the frame 111 and the bottom surface of the bottom 118 of the base 110. The joining can be performed by soldering. As shown in Figs. 9B and 9C, the substrate 100 has a heat dissipation portion 101, an insulating portion 102, and a metal film 103. The heat dissipation portion 101 is formed of a metal such as Cu, the insulating portion 102 is formed of an insulating material, and the metal film 103 is formed of a metal such as Cu like the heat dissipation portion 101.

[0045] The heat dissipation portion 101 is bonded to the bottom 118 of the base 110, and the metal film 103 or the insulating portion 102 is bonded to the frame portion 111. Therefore, the substrate 100 is designed so that the metal film 103 and the heat dissipation portion 101 are provided on the same plane. Specifically, the heat dissipation portion 101 has a convex structure protruding toward the base 110 in a cross-sectional view or a side view, and is formed so as to be exposed in a region where the heat dissipation portion 101 is bonded to the bottom 118 of the base 110. On the other hand, the heat dissipation portion 101 does not protrude in a region where the substrate 100 is bonded to the frame portion 111, and the insulating portion 102 is disposed on the heat dissipation portion 101. In addition, in a bonding region of the substrate 100 corresponding to the side having the first electrode layer 112 of the frame portion 111, the metal film 103 is provided on the insulating portion 102. In addition, the heat dissipation portion 101 and the metal film 103 are not in contact with each other, and a predetermined distance is provided between them so as not to be electrically connected. A part of this region with a predetermined distance therebetween overlaps with a part of the gap between frame portion 111 and bottom portion 118 .

[0046] 9D is a top view of the bonding surface that bonds to base portion 110 of substrate 100. As shown in FIG. 9D, substrate 100 has, on the bonding surface, insulating portion 102, metal film 103, and exposed portion 106 where heat dissipation portion 101 is exposed. Metal film 103 also has metal region 104 and insulating region 105. Exposed portion 106 bonds to bottom portion 118, and metal region 104 bonds to the bottom surface of frame portion 111.

[0047] The shape of exposed portion 106 represents the area where heat dissipation portion 101 protrudes. This shape is designed to match the shape of the bottom surface of bottom portion 118 and to be slightly larger. If they were the same size, the solder would not be able to escape to the outside of the joint surface during soldering, and there would be an extra thickness between substrate 100 and base portion 110. In addition, the side of metal region 104 that is closer to the center of substrate 100 with insulating region 105 sandwiched therebetween is joined to frame portion 111. This joining electrically connects metal region 104 and first electrode layer 112.

[0048] In this way, by aligning the height of the metal film 103 provided on either side of the insulating section 102 and the exposed section 106 of the heat dissipation section 101, it is possible to reduce floating that may occur between the frame section 111 or the bottom section 118 when bonding to the base section 110. If the floating becomes large, the bonding strength will be weakened or a partially unbonded area will be created, increasing the possibility that the package will come off the mounting board. In addition, by bonding the entire bottom surface of the bottom section 118 to the exposed section 106 of the heat dissipation section 101, heat can be efficiently released to the board 100.

[0049] In FIG. 10A, the lens member 140 is bonded to the lid 120 using an adhesive. This bonding process forms an adhesive portion 130 between the lid 120 and the lens member 140, and the light emitting device 1 shown in FIGS. 1 to 3 is manufactured. The adhesive portion 130 is not formed on the entire upper surface of the lid 120 or the entire lower surface of the lens member 140, but is provided at a position that does not interfere with the path of the light emitted from the semiconductor laser element 170. Specifically, in the light emitting device 1, the main part of the light emitted by the semiconductor laser element 170 enters the lens shaped region of the lens member 140 and is emitted from this region. Therefore, it is preferable that the adhesive portion 130 is not formed on the lower surface of the lens member 140 corresponding to the region having the lens shape, but is used so as to be formed in the outer edge region of the lens member 140. It is preferable to use an ultraviolet-curing resin as the adhesive for forming the adhesive portion 130. Since the ultraviolet-curing resin can be cured in a relatively short time without heating, it is easy to fix the lens member 140 at the desired position.

[0050] 10B and 10C, the lens member 140 has a lens shape in which a plurality of lens portions are connected. Each lens portion corresponds to one semiconductor laser element, and each lens portion is designed to pass a major portion of the light emitted from a different semiconductor laser element. The lens member 140 can be made of glass such as BK7 or B270.

[0051] In this manner, the light emitting device 1 according to the first embodiment is manufactured. Note that the process for manufacturing the light emitting device 1 is not limited to the process described with reference to FIGS.

[0052] <Second embodiment> FIG. 11 shows a cross-sectional view of a light emitting device 2 according to the second embodiment. The schematic diagram of the exterior of the light emitting device 2 is the same as that shown in FIG. 1, and the internal structure as viewed from above is also the same as that shown in FIG. 2. The light emitting device 2 according to the second embodiment is different from the light emitting device 1 according to the first embodiment in the structure of the bottom constituting the base. In particular, the bonding surface of the bottom that bonds to the substrate is different from that of the first embodiment, and as long as the shapes of the insulating parts and exposed parts on the bonding surface of the substrate are made corresponding to this, the structure, materials, etc. described in the first embodiment can be adopted in other respects.

[0053] As explained in the process of FIG. 5A of the light emitting device 1 of the first embodiment, when the frame 111 and the bottom 118 are joined, it is desirable that the bottom 118 is arranged so that the distance from the frame 111 is uniform everywhere. However, it is possible that the bottom 118 may be misaligned during the joining process. If the misalignment becomes large, a part of the bottom 118 will come into contact with the frame 111. In addition, if the distance between the bottom 118 and the frame 111 becomes narrower than the designed distance and the distance between the first electrode layer 112 and the bottom 118 at that part becomes shorter, the first electrode layer 112 and the bottom 118 will be electrically connected when the frame 111 and the bottom 118 are joined to the substrate 100 by soldering, which will lead to a defect in the light emitting device.

[0054] Therefore, in the light emitting device 2 according to the second embodiment, a recess 214 is provided at least on the outer edge of the bonding surface 215 of the bottom 213 with the substrate 200. In this way, the distance between the frame 211 and the bottom 213 at the bottom surface of the base 210, which is the bonding surface 215 with the substrate 200, is made wider than the distance between the frame 211 and the bottom 213 at the bonding surface 212 with the frame 211.

[0055] 12A and 12B show an example of the bottom 213 having a recessed portion 214. As an example, the recess can be formed by making the bottom 213 convex. The protruding region of the convex shape becomes the bonding surface 215 with the substrate 200, and the shape of the protruding region can be a reduced shape similar to the shape of the outer frame of the bottom 213 as shown in FIG. 12A, or a circular shape as shown in FIG. 12B. FIG. 13 is a schematic diagram showing the bonding surface of the substrate 200 when the shape of the protruding region is circular. As shown in FIG. 13, the exposed portion 201 also has a circular shape in accordance with the bonding surface 215 of the base 210.

[0056] The recessed portion 214 only needs to have a sufficient interval and height to prevent the above-mentioned defects from occurring during the soldering process with the substrate 200. For example, the light emitting device 1 of the first embodiment is designed to have an interval of about 0.1 mm, but if an interval of about 0.1 mm is required at the minimum, the width of the recess may be designed to be about 0.1 mm. In this way, even if the frame portion 211 and the bottom portion 213 are in contact with each other at the joint surface 212 with the frame portion 211, the interval between the frame portion 211 and the bottom portion 213 at the joint surface with the substrate 200 can be maintained at about 0.1 mm. Also, for example, the light emitting device 1 of the first embodiment is designed so that the distance from the side surface 119 of the bottom portion 118 to the first electrode layer 112 is 0.3 mm or more. When designing the width of the recess, it may be determined in consideration of the design of the frame portion so that the distance to the first electrode layer 112 is maintained at about 0.3 mm. The 0.3 mm interval is merely an example of the design of the light emitting device 1, and the predetermined interval to be provided may be appropriately determined based on the shape, material, etc. of the light emitting device.

[0057] Therefore, it is preferable to provide the recess 214 so that it has a width equivalent to the gap to be secured when the bottom 213 does not have the recess 214 and there is no misalignment with the frame 211. The recess 214 may have a greater width, or may have a shape in which a part of the protruding region has a greater width, such as the circular bottom 213 shown in FIG. 12. However, since a wider recess also reduces the bonding area with the substrate 200, it is preferable not to make the width of the recess wider than necessary to obtain sufficient bonding, and the width is preferably between 0.1 mm and 0.5 mm. For example, when a circular bonding surface as shown in FIG. 12 is provided, it is possible to design the recess so that the width at the position where the width is narrowest is equivalent to the gap to be secured.

[0058] The height ensured by recess 214 should be sufficient so that the solder that protrudes from bonding surface 215 of bottom 213 with substrate 200 rises along the side surface that intersects with bonding surface 215 with substrate 200 and remains within the recess. The desired height varies depending on the material and amount of solder used for bonding, but for example, a height of about 0.2 mm is ensured for light emitting device 2.

[0059] In addition, when the bonding surface with the substrate has a shape obtained by processing the four corners of a rectangle or square, such as bottom 118 described in light-emitting device 1 or bottom 213 shown as an example in Figure 12, the exposed portion on the substrate side is also shaped to match this, thereby providing self-alignment when the bottom is bonded to the substrate.

[0060] On the other hand, when the joint surface with the substrate 200 is circular, as in the bottom 213 shown as an example in Fig. 12, the exposed portion 201 on the substrate side is also provided in a circular shape accordingly, so that the joint surface of the bottom 213 fits within the exposed portion 201, but even when the substrate 200 and the bottom 213 are in contact with each other via solder, the joint surface has mobility in the direction of rotation of the circle until the solder hardens. As described above, when a misalignment occurs between the frame 211 and the bottom 213, the joint surface 215 with the substrate 200 is made circular, so that the rotation direction can be adjusted and the misalignment of the frame 211 with respect to the substrate 200 can be corrected.

[0061] First Modification The light emitting device 3 of the first modified example is realized in a way different from that of the light emitting device 2 shown in the second embodiment, in that the distance between the frame and the bottom at the joint surface with the substrate is wider than the distance between the frame and the bottom at the joint surface with the frame.

[0062] Fig. 14 shows a cross-sectional view of the light emitting device 3 according to the first modified example. As shown in Fig. 14, the light emitting device 3 has a recessed portion 312 in the frame portion 311, so that the distance between the frame portion 311 and the bottom portion 313 at the joint surface with the substrate 300 is made wider than the distance between the frame portion 311 and the bottom portion 313 at the joint surface with the substrate 300. In this way, this may be realized by a method of processing the shape of the frame portion 311, and in the light emitting device 3, unlike the light emitting device 2, the substrate 100 of the first embodiment can be used as it is.

[0063] <<Second Modification>> FIG. 15 shows a cross-sectional view of the light emitting device 4 according to the second modification. FIG. 16 shows a schematic diagram of the bottom according to the second modification. As shown in FIG. 15, in the light emitting device 4, the joint surface with the substrate 400 is smaller than the joint surface with the frame portion 411 at the bottom portion 412, and the side surface 413 has an inclination. By providing an inclination to the side surface 413 in this way, the distance between the frame portion 411 and the bottom portion 412 at the joint surface with the substrate 400 can be made wider than the distance between the frame portion 411 and the bottom portion 412 at the joint surface with the frame portion 411. Note that, instead of providing an inclination to the bottom portion 412 as in the first modification, an inclination may be provided to the frame portion 411.

[0064] Although the light emitting device according to the present invention has been described above based on each embodiment and modified example, the light emitting device realizing the technical idea of ​​the present invention is not limited to this. For example, the light emitting device in which three semiconductor laser elements are arranged has been described, but the light emitting device may be a light emitting device in which one or more semiconductor laser elements are arranged. In addition, the light emitting device may not have the light reflecting member 150, and the light emitted from the semiconductor laser element may travel in the direction of the lens member 140.

[0065] Furthermore, light emitting devices having the technical features disclosed by the present invention are not limited to the structures of light emitting devices 1 to 4. For example, the present invention can be applied to light emitting devices having components that are not disclosed in any of the light emitting devices, and differences from the disclosed light emitting devices are not grounds for saying that the present invention cannot be applied.

[0066] On the other hand, the present invention can be applied even if it is not essential to have all the components of the light-emitting device disclosed in each embodiment and modification. For example, if some components of the light-emitting device disclosed in the first embodiment are not described in the claims, the components are not limited to those disclosed in this embodiment, and the freedom of design by those skilled in the art, such as substitution, omission, modification of shape, and change of material, is recognized, and the invention described in the claims is applied. [Industrial Applicability]

[0067] The light emitting device according to each embodiment can be used in projectors, vehicle headlights, lighting, display backlights, and the like. [Explanation of symbols]

[0068] 1...Light emitting device 100...Substrate 101...Heat radiation part 102…Insulation part 103...Metal film 104...Metal area 105…Isolation area 106...Exposed part 110...Base 111…Frame 112...First electrode layer 113...Joint surface 114…Second electrode layer 115…Inner surface 116…Inner surface 117…Inner surface 118…Bottom 119…Side 120...Lid part 130...Adhesive part 140...Lens component 150...Light reflecting member 160…Submount 170...Semiconductor laser element 180…Wire 2...Light emitting device 200...Substrate 201...Exposed part 210...Base 211…Frame section 212...Joint surface 213…Bottom 214…Recess 215…Joint surface 3. Light-emitting device 300...Substrate 310...Base 311…Frame section 312…Recess 313…Bottom 4. Light-emitting device 400…Substrate 410...Base 411…Frame section 412…Bottom 413…Side

Claims

1. one or more light emitting elements; a base having a bottom portion mainly made of metal, a frame portion mainly made of ceramic to which the bottom portion is joined, a first electrode layer, and a second electrode layer electrically connected to the first electrode layer; the bottom portion has an arrangement surface on which the one or more light-emitting elements are arranged, the frame portion has an upper surface, a lower surface, an outer surface intersecting with the upper surface and the lower surface, a joint surface that is located below the upper surface and above the lower surface and joins with a part of the bottom portion, a first inner surface that intersects with the joint surface and extends downward from the joint surface and intersects with the lower surface, forming a rectangular first frame larger than the arrangement surface, a second inner surface that intersects with the joint surface and extends upward from the joint surface, forming a rectangular second frame smaller than the first frame, and a plane that intersects with the arrangement surface and at least a part of the second inner surface above the joint surface, The frame portion has an opening defined by the first frame and an opening defined by the second frame, the opening extending from the upper surface to the lower surface of the frame portion being formed, the second electrode layer is provided on the flat surface of the frame portion, the first electrode layer and the second electrode layer are electrically connected to the one or more light emitting elements; When viewed from above, the one or more light-emitting elements are surrounded by the second frame, The frame portion does not have an inner surface on the inside of the second frame above the joint surface and below the plane, the frame portion does not have any inner side surface on the inside of the first frame below the joint surface and above the bottom surface.

2. one or more light emitting elements; a base having a bottom portion mainly made of metal, a frame portion mainly made of ceramic to which the bottom portion is joined, a first electrode layer, and a second electrode layer electrically connected to the first electrode layer; the bottom portion has an arrangement surface on which the one or more light-emitting elements are arranged, the frame portion has an upper surface, a lower surface, a joining surface that is located below the upper surface and above the lower surface and joins to a part of the bottom portion, a first inner surface that intersects with the joining surface and extends downward from the joining surface to form a rectangular first frame larger than the arrangement surface, a second inner surface that intersects with the joining surface and extends upward from the joining surface to form a rectangular second frame smaller than the first frame, and a plane that intersects with the arrangement surface and at least a part of the second inner surface above the joining surface, The frame portion has an opening defined by the first frame and an opening defined by the second frame, the opening extending from the upper surface to the lower surface of the frame portion being formed, the second electrode layer is provided on the flat surface of the frame portion, the first electrode layer and the second electrode layer are electrically connected to the one or more light emitting elements; When viewed from above, the one or more light-emitting elements are surrounded by the second frame, A light emitting device, wherein the one or more light emitting elements emit a major portion of light laterally from a side surface which is a light emitting end surface.

3. one or more light emitting elements; a base including a bottom portion having a placement surface on which the one or more light-emitting elements are placed, a frame portion to which the bottom portion is joined, a first electrode layer, and a second electrode layer electrically connected to the first electrode layer; the bottom has a higher thermal conductivity than the frame; the frame portion has an upper surface, a lower surface, an outer surface intersecting with the upper surface and the lower surface, a joint surface that is located below the upper surface and above the lower surface and joins with a part of the bottom portion, a first inner surface that intersects with the joint surface and extends downward from the joint surface and intersects with the lower surface, forming a rectangular first frame larger than the arrangement surface, a second inner surface that intersects with the joint surface and extends upward from the joint surface, forming a rectangular second frame smaller than the first frame, and a plane that intersects with the arrangement surface and at least a part of the second inner surface above the joint surface, The frame portion has an opening defined by the first frame and an opening defined by the second frame, the opening extending from the upper surface to the lower surface of the frame portion being formed, the second electrode layer is provided on the flat surface of the frame portion, the first electrode layer and the second electrode layer are electrically connected to the one or more light emitting elements; When viewed from above, the one or more light-emitting elements are surrounded by the second frame, The frame portion does not have an inner surface on the inside of the second frame above the joint surface and below the plane, the frame portion does not have any inner side surface on the inside of the first frame below the joint surface and above the bottom surface.

4. one or more light emitting elements; a base including a bottom portion having a placement surface on which the one or more light-emitting elements are placed, a frame portion to which the bottom portion is joined, a first electrode layer, and a second electrode layer electrically connected to the first electrode layer; the bottom has a higher thermal conductivity than the frame; the frame portion has an upper surface, a lower surface, a joining surface that is located below the upper surface and above the lower surface and joins to a part of the bottom portion, a first inner surface that intersects with the joining surface and extends downward from the joining surface to form a rectangular first frame larger than the arrangement surface, a second inner surface that intersects with the joining surface and extends upward from the joining surface to form a rectangular second frame smaller than the first frame, and a plane that intersects with the arrangement surface and at least a part of the second inner surface above the joining surface, The frame portion has an opening defined by the first frame and an opening defined by the second frame, the opening extending from the upper surface to the lower surface of the frame portion being formed, the second electrode layer is provided on the flat surface of the frame portion, the first electrode layer and the second electrode layer are electrically connected to the one or more light emitting elements; When viewed from above, the one or more light-emitting elements are surrounded by the second frame, A light emitting device, wherein the one or more light emitting elements emit a major portion of light laterally from a side surface which is a light emitting end surface.

5. 5. The light-emitting device according to claim 1, wherein the second inner surface has a region that intersects with the bonding surface and a plane on which the second electrode layer is provided, and a region that intersects with the bonding surface but does not intersect with the plane on which the second electrode layer is provided.

6. the bottom portion has a lower surface opposite the mounting surface; the lower surface of the base includes a lower surface of the bottom portion and a lower surface of the frame portion, The light emitting device according to claim 1 , wherein a gap is provided between a lower surface of the bottom portion and a lower surface of the frame portion when viewed from below.

7. the bottom portion has a side surface between a lower surface of the bottom portion and the placement surface, The light emitting device according to claim 6 , wherein a gap is provided between a side surface of the bottom portion and a first inner surface of the frame portion, the gap extending from the joint surface to a lower surface of the base portion.

8. The light emitting device according to claim 1 , wherein the bottom is joined to the frame (excluding an embodiment in which the bottom is in contact with the entire first inner surface).

9. the lower surface of the frame portion is a flat surface having a rectangular annular shape in a bottom view, the first electrode layer is provided on a lower surface of the frame portion, 9. The light-emitting device according to claim 1, wherein the width of the lower surface of the frame portion is greater at a side on which the first electrode layer is provided than at a side on which the first electrode layer is not provided, out of the four sides that form a rectangle.

10. A substrate having an insulating portion and a heat dissipation portion having a convex shape in a cross-sectional view, In the substrate, a convex protruding region of the heat dissipation portion is exposed from the insulating portion in a top view, The light emitting device according to claim 1 , wherein the bottom portion is joined to a convex protruding region of the heat dissipation portion.

11. A bottom portion mainly made of metal; a frame portion made mainly of ceramic and to which the bottom portion is joined; A first electrode layer; a second electrode layer electrically connected to the first electrode layer, the bottom portion has an arrangement surface on which one or more light emitting elements are arranged, the frame portion has an upper surface, a lower surface, an outer surface intersecting with the upper surface and the lower surface, a joint surface that is located below the upper surface and above the lower surface and joins with a part of the bottom portion, a first inner surface that intersects with the joint surface and extends downward from the joint surface and intersects with the lower surface, forming a rectangular first frame larger than the arrangement surface, a second inner surface that intersects with the joint surface and extends upward from the joint surface, forming a rectangular second frame smaller than the first frame, and a plane that intersects with the arrangement surface and at least a part of the second inner surface above the joint surface, The frame portion has an opening defined by the first frame and an opening defined by the second frame, the opening extending from the upper surface to the lower surface of the frame portion being formed, the second electrode layer is provided on the flat surface of the frame portion, The bottom portion covers an opening of the frame portion defined by the second frame from a lower surface side, The frame portion does not have an inner surface on the inside of the second frame above the joint surface and below the plane, The frame portion has no inner surface on the inside of the first frame below the joint surface and above the bottom surface.

12. A bottom portion having an arrangement surface on which one or more light emitting devices are arranged; A frame portion to which the bottom portion is joined; A first electrode layer; a second electrode layer electrically connected to the first electrode layer, the bottom has a higher thermal conductivity than the frame; the frame portion has an upper surface, a lower surface, an outer surface intersecting with the upper surface and the lower surface, a joint surface that is located below the upper surface and above the lower surface and joins with a part of the bottom portion, a first inner surface that intersects with the joint surface and extends downward from the joint surface and intersects with the lower surface, forming a rectangular first frame larger than the arrangement surface, a second inner surface that intersects with the joint surface and extends upward from the joint surface, forming a rectangular second frame smaller than the first frame, and a plane that intersects with the arrangement surface and at least a part of the second inner surface above the joint surface, The frame portion has an opening defined by the first frame and an opening defined by the second frame, the opening extending from the upper surface to the lower surface of the frame portion being formed, the second electrode layer is provided on the flat surface of the frame portion, The bottom portion covers an opening of the frame portion defined by the second frame from a lower surface side, The frame portion does not have an inner surface on the inside of the second frame above the joint surface and below the plane, The frame portion has no inner surface on the inside of the first frame below the joint surface and above the bottom surface.

Images