Semiconductor device

Abstract

To provide a touch panel having a thin thickness, alternatively, a highly visible touch panel, a lightweight touch panel, or a touch panel with reduced power consumption.SOLUTION: A pair of conductive layers constituting a capacitance type touch sensor has a mesh shape having a plurality of openings. Further, a pair of conductive layers constituting a touch sensor is disposed inside a pair of substrates of a touch panel, and a conductive layer having translucency capable of supplying a constant potential is provided between the pair of conductive layers and a circuit for driving a display element.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] One aspect of the present invention relates to an input device. One aspect of the present invention relates to a display device. TECHNICAL FIELD One embodiment of the present invention relates to an input / output device.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a power storage device, a storage device, and a , electronic device, lighting device, input device, input / output device, driving method thereof, or manufacturing method thereof The method can be given as an example.

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. Refers to devices in general. Semiconductor elements such as transistors, semiconductor circuits, computing devices, memory The device is one aspect of a semiconductor device. power devices, input / output devices, electro-optical devices, power generation devices (including thin-film solar cells, organic thin-film solar cells, etc.) Some of the equipment and electronic devices include semiconductor devices. [Background technology]

[0004] In recent years, display devices equipped with touch sensors as position input means have come into practical use. A display device equipped with a touch sensor is called a touch panel or touch screen. (Hereinafter, this will be simply referred to as a "touch panel"). For example, Examples of mobile information terminals include smartphones and tablet terminals.

[0005] One type of display device is a liquid crystal display device that includes a liquid crystal element. The transistors are arranged in a trix shape and used as switching elements connected to each pixel electrode. Active matrix liquid crystal display devices using such a liquid crystal display device have been attracting attention.

[0006] For example, a metal oxide channel-type switching element is used to connect to each pixel electrode. Active matrix liquid crystal display devices using transistors with a region (Patent Document 1 and Patent Document 2).

[0007] Liquid crystal display devices are broadly classified into two types: a transmissive type and a reflective type.

[0008] Transmissive LCD devices use backlights such as cold cathode fluorescent lamps or LEDs to project light onto the LCD. By utilizing the optical modulation effect of the backlight, the light from the backlight passes through the liquid crystal and is emitted to the outside of the liquid crystal display device. Select the output state and non-output state, display light and dark, and The above are combined to display an image.

[0009] In addition, a reflective liquid crystal display device utilizes the optical modulation effect of liquid crystal to reflect external light, i.e., incident light, A state in which the light is reflected by the pixel electrode and output to the outside of the device, and a state in which the incident light is not output to the outside of the device By selecting the light and dark, and combining them, you can display the image. This is what happens. [Prior art documents] [Patent documents]

[0010] [Patent Document 1] JP 2007-123861 A [Patent Document 2] JP 2007-96055 A Summary of the Invention [Problem to be solved by the invention]

[0011] The user interface on the display panel is to touch the screen with a finger or a stylus. There is a demand for touch panels that can accept input via touch.

[0012] In addition, there is a demand for electronic devices to which touch panels are applied to be thinner and lighter. Therefore, there is a demand for thinner and lighter touch panels.

[0013] For example, the touch panel has a structure in which a touch sensor is provided on the visible side (display surface side) of the display panel. It can be said that it is completed.

[0014] For example, a touch panel having a capacitive touch sensor on the display surface of the display panel may be used. In a touch panel, the pixels and wiring that make up the display panel and the electrodes and wiring that make up the touch sensor are When the distance between the lines becomes smaller, the noise generated when the touch sensor drives the display panel This may result in a decrease in the touch panel's detection sensitivity. There is.

[0015] An object of one embodiment of the present invention is to provide a thin touch panel. One of the objectives is to provide a touch panel with high visibility. One of the objectives is to provide a touch panel with reduced power consumption. One of our goals is to provide

[0016] Alternatively, it is an object of the present invention to provide a novel input device. One of the objectives is to provide the following. [Means for solving the problem]

[0017] One aspect of the present invention is a semiconductor device comprising a first substrate, a first conductive layer, a second conductive layer, and a third conductive layer. a fourth conductive layer, a fifth conductive layer, an insulating layer, and a display element. The first conductive layer, the second conductive layer, and the third conductive layer are provided on the same plane and spaced apart from each other, In a plan view, the second conductive layer is located between the first conductive layer and the third conductive layer, and the first The conductive layer and the fourth conductive layer are electrically connected, and the third conductive layer and the fourth conductive layer are electrically The second conductive layer and the fourth conductive layer are connected to each other, and have an overlapping portion with an insulating layer interposed therebetween. The conductive layer has a mesh shape having a plurality of openings, and the openings and the display element, the fifth conductive layer The fifth conductive layer is located between the first conductive layer and the display element, and the fifth conductive layer is located between the first conductive layer and the display element. The fifth conductive layer has a function of transmitting visible light.

[0018] In the above, it is preferable that the fifth conductive layer contains a metal oxide.

[0019] In the above, the fourth conductive layer and the fifth conductive layer are formed by processing the same film. It is preferable that the above is done.

[0020] In the above, it is preferable that the display element includes a liquid crystal.

[0021] In the above, the display device has a colored layer, and the colored layer, an opening, a display element, and a fifth conductive layer. The layers preferably have overlapping portions.

[0022] In the above, the fifth conductive layer is electrically connected to a terminal to which a constant potential is supplied. It is preferable that

[0023] In the above, a second substrate is provided above the first conductive layer, The second conductive layer, the third conductive layer, the fourth conductive layer, and the fifth conductive layer are formed on the second substrate. It is preferable that the above is done.

[0024] In the above, a transistor electrically connected to a display element is provided. The fifth conductive layer has a semiconductor layer, and the semiconductor layer and the fifth conductive layer have an oxide containing the same metal element. In this case, the transistor preferably has a first gate electrode and a second gate electrode. the semiconductor layer is located between a first gate electrode and a second gate electrode, Either the first gate electrode or the second gate electrode may contain an oxide containing the metal element. preferable.

[0025] Alternatively, in the above-mentioned embodiment, a transistor electrically connected to a display element is provided. The fifth conductive layer includes a semiconductor layer, and the semiconductor layer and the fifth conductive layer include the same oxide semiconductor. In this case, the transistor preferably has a first gate electrode and a second gate electrode. The semiconductor layer is located between a first gate electrode and a second gate electrode, and the first gate electrode One of the electrode or the second gate electrode preferably contains an oxide semiconductor. Effect of the Invention

[0026] According to one embodiment of the present invention, a thin touch panel can be provided. Or, it is possible to provide a lightweight touch panel. Or, it is possible to provide a consumer-friendly touch panel. It is possible to provide a touch panel with reduced power consumption. [Brief description of the drawings]

[0027] [Figure 1] 3 shows a configuration example of a touch panel module according to an embodiment. [Diagram 2] 3 shows a configuration example of a touch panel module according to an embodiment. [Diagram 3] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 4] 3 shows a configuration example of a touch panel module according to an embodiment. [Diagram 5] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 6] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 7] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 8] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 9] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 10] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 11] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 12] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 13] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 14] 3 illustrates a configuration example of a touch sensor according to an embodiment. [Figure 15] 3 illustrates a configuration example of a touch sensor according to an embodiment. [Figure 16] 3 illustrates a configuration example of a touch sensor according to an embodiment. [Figure 17] 3 illustrates a configuration example of a touch sensor according to an embodiment. [Figure 18] 3 illustrates a configuration example of a touch sensor according to an embodiment. [Figure 19] 3 illustrates a configuration example of a touch sensor according to an embodiment. [Figure 20] 3 shows an example of the configuration of a touch panel according to an embodiment. [Figure 21] 1A and 1B are a block diagram and a timing chart of a touch sensor according to an embodiment. [Figure 22] 1 is a circuit diagram of a touch sensor according to an embodiment. [Diagram 23] 1A to 1C are diagrams illustrating a pixel including a touch sensor according to an embodiment. [Figure 24] 5A to 5C are diagrams illustrating operations of a touch sensor and a pixel according to an embodiment. [Diagram 25] 1A to 1C are diagrams illustrating a display module according to an embodiment. [Figure 26] 1A to 1C are diagrams illustrating electronic devices according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0028] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the present invention can be realized by the following embodiments. The present disclosure should not be construed as being limited to the contents of the preceding paragraph.

[0029] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and the repeated explanations are omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be used.

[0030] In each figure described in this specification, the size, layer thickness, or area of ​​each component is indicated by the following formula: The figures may be exaggerated for clarity and are not necessarily limited to scale. stomach.

[0031] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The numbers are added for the purpose of convenience and are not intended to be limiting.

[0032] The words "film" and "layer" can be used interchangeably. For example, the term "conductive layer" may be changed to the term "conductive film." In some cases, the term "insulating film" may be changed to the term "insulating layer." .

[0033] (Embodiment 1) In this embodiment, a configuration example of an input device (touch sensor) of one embodiment of the present invention and a The configuration of an input / output device (touch panel) having an input device according to one embodiment and a display device (display panel) An example will be described with reference to the drawings.

[0034] In the following, a capacitive touch sensor is applied as a touch sensor according to one embodiment of the present invention. This case will be explained.

[0035] In this specification, the touch panel has a function of displaying (outputting) images on a display surface. A touch sensor that detects when a finger, stylus, or other object touches or approaches the display surface. Therefore, the touch panel is one type of input / output device. do.

[0036] In the present specification, the substrate of the touch panel is provided with, for example, an FPC (Flexible Printed Circuit). Print Circuit) or TCP (Tape Carrier Packag e) or other connectors attached to the board, or COG (Chip On Ground) The IC (integrated circuit) mounted by the LDLC method is called a touch panel module. It may also simply be called a touch panel.

[0037] A capacitive touch sensor that can be applied to one aspect of the present invention includes a pair of conductive layers. A capacitance is formed between the pair of conductive layers. When the object to be detected touches or is connected to the pair of conductive layers, The detection is performed by utilizing the change in the capacitance between a pair of conductive layers due to the approach of the two layers. It is possible.

[0038] The capacitive touch panel includes a surface capacitive touch panel and a projected capacitive touch panel. The capacitance method includes the self-capacitance method and the mutual capacitance method. This is preferable since it enables simultaneous multi-point detection.

[0039] Moreover, each of the pair of conductive layers constituting the touch sensor preferably has an opening. More preferably, the filter has a mesh-like shape having a plurality of openings. It is preferable that the opening and the display element are arranged so as to overlap each other. By doing so, light from the display element is emitted to the outside through the opening, so that the touch sensor The pair of conductive layers constituting the touch sensor does not need to be transparent. The material of the pair of conductive layers is a metal or alloy having a lower resistance than the transparent conductive material. Therefore, the influence of delay in the detection signal is reduced, and the This configuration can improve the detection sensitivity of the touch panel. The present invention can also be suitably applied to large display devices such as televisions.

[0040] In addition, a layer having a function of blocking visible light is provided on the viewing side of the pair of conductive layers constituting the touch sensor. It is preferable to provide a light-shielding layer having a conductive layer constituting the touch sensor. Even if a material that reflects visible light, such as a metal, is used as the layer, the conductive layer This can prevent external light from being reflected and thus reduce visibility.

[0041] In addition, the pair of conductive layers constituting the touch sensor are disposed between the two display elements in a plan view. In this case, the pair of conductive layers constituting the touch sensor are preferably arranged to overlap with the region of the conductive layer. The layers are arranged to avoid the optical path of light from the display element, so moire does not occur in principle. Here, moire refers to the phenomenon that occurs when two or more periodic patterns are overlapped. This refers to the interference fringes that occur in the touch panel. It is possible.

[0042] Examples of the display element included in the touch panel of one embodiment of the present invention include a liquid crystal element, a MEMS element, and a display element. (Micro Electro Mechanical System) based optics Elements, organic EL (Electro Luminescence) elements and light-emitting diodes ( Light emitting devices such as LEDs (Light Emitting Diodes), electrophoretic devices, etc. A variety of display elements can be used.

[0043] Here, the touch panel is a transmissive or reflective liquid crystal panel using a liquid crystal element as a display element. It is preferred to apply the display device.

[0044] Furthermore, a pair of conductive layers constituting the touch sensor are provided on a pair of substrates of the touch panel. In this case, it is preferable to place the conductive layer constituting the touch sensor on the inside. It is preferable that the conductive layer has a shape having an opening. For this reason, for example, a light-transmitting conductive layer that does not have an opening in the conductive layer constituting the touch sensor can be provided. In comparison with the case where a conductive film having such a conductive layer is used, the electrical noise generated when driving the display element is reduced. In other words, the display element and the terminal are disposed between the pair of substrates. Even if both conductive films constituting the touch sensor are sandwiched, high detection sensitivity can be achieved. As a result, we have been able to realize a touch panel that is both thin and has high detection sensitivity. do.

[0045] Between the pair of conductive layers constituting the touch sensor and the circuit for driving the display element, It is more preferable to provide a conductive layer capable of supplying a constant potential. Specifically, the conductive layer can function as a layer for driving a display element. It is possible to prevent noise from the circuit from being transmitted to the touch sensor. This prevents noise generated when the touch sensor is driven from affecting the display element, the circuit that drives the display element, or It is also possible to prevent the electric current from being transmitted to the wiring that constitutes the circuit. The timing for driving the display element and the timing for driving the touch sensor are shifted. The display element and the touch sensor are connected without taking measures such as suppressing the influence of noise by It is possible to drive both sensors at the same time (synchronized drive), or to change the timing of these drives. Therefore, for example, the driving of the display element can be performed without synchronizing the driving of the display element. By increasing the frequency (also called the frame rate), smooth video display can be achieved. In addition, for example, by increasing the driving frequency of the touch sensor, it is possible to improve the detection accuracy. In addition, the driving frequency of the display element and the driving frequency of the touch sensor can be set separately. For example, you can set either or both drive frequencies depending on the situation. By providing a period during which the number is set low, it is also possible to reduce power consumption.

[0046] Furthermore, the conductive layer and a part of a pair of conductive layers constituting the touch sensor are connected to the same conductive layer. For example, a bridge disposed at the intersection of a pair of conductive layers is preferably used. The conductive layer for the edge and the conductive layer used as the shield layer are made of the same conductive film. Form.

[0047] In addition, a conductive material having light transmitting properties is used as the conductive layer functioning as the shield layer. Alternatively, it is preferable to use an oxide semiconductor having a low resistance. For example, In this case, a conductive metal oxide can be used. By using such a material, it is possible to reduce the cost of using a metal. This eliminates the effects of oxidation that occurs when the touch panel is touched, enabling the realization of a highly reliable touch panel.

[0048] Hereinafter, a more specific configuration example of one embodiment of the present invention will be described with reference to the drawings.

[0049] [Configuration example] FIG. 1(A) is a schematic perspective view of a touch panel module 10 according to an embodiment of the present invention. FIG. 1B is a perspective schematic view of the touch panel module 10 with a pair of substrates separated from each other. The touch panel module 10 has a structure in which a substrate 31 and a substrate 21 are bonded together. The touch sensor 22 is provided on the substrate 21 side.

[0050] The substrate 21 is provided with an FPC 41. A touch panel is attached to the surface of the substrate 21 facing the display panel. The touch sensor 22 includes a conductive layer 23, a conductive layer 24, a conductive layer 25, etc. Also, wiring 29 is provided to electrically connect these conductive layers to the FPC 41. 41 has a function of supplying a signal from the outside to the touch sensor 22. 1 has a function of outputting a signal from the touch sensor 22 to the outside. A type that does not have this feature is sometimes simply called a touch panel.

[0051] The substrate 21 on which the touch sensor 22 is formed is a touch sensor substrate or a touch panel. For example, such a substrate can be used as a touch sensor module. By attaching the film to the display surface of a film, a touch panel can be formed.

[0052] The touch sensor 22 includes a plurality of conductive layers 23, a plurality of conductive layers 24, and a plurality of conductive layers 25. The conductive layer 23 has a shape extending in one direction. The conductive layers 24 are arranged in a direction intersecting the extension direction. The conductive layer 25 is disposed between the conductive layers 23 in the extending direction and the Two adjacent conductive layers 24 are electrically connected in the cross direction. Among the conductive layers 24, some of the conductive layers 24 are arranged in a direction intersecting the extending direction of the conductive layers 23. The conductive layers 24 are electrically connected by a conductive layer 25 .

[0053] Here, the conductive layer 23 and the conductive layer 25 have an overlapping region. An insulating layer is provided between the conductive layer 25 .

[0054] A capacitance is formed between the adjacent conductive layers 23 and 24. For example, When using a capacitive driving method, one of the conductive layers 23 and 24 is connected to the transmitting side. One electrode can be used as a pole and the other as a receiving electrode.

[0055] In this embodiment, the two conductive layers 24 are electrically connected by the conductive layer 25. The conductive layer 24 is formed in a shape extending in one direction like the conductive layer 23, and the conductive layer 23 and the conductive layer 24 are formed in a shape extending in one direction like the conductive layer 23. By providing an insulating layer between the conductive layer 25 and the conductive film 26, the conductive layer 25 may be omitted. At this time, the conductive layers 23 and 24 partially overlap each other.

[0056] In addition, the conductive layers 23, 24, 25, and other conductive films, that is, the conductive layers constituting the touch panel, As a material that can be used for wiring and electrodes that form the semiconductor device, for example, a material with low resistivity is desirable. For example, metals such as silver, copper, and aluminum may be used. Metal nanoparticles are composed of many conductors arranged in a single layer (e.g., several nanometers in diameter). Wires may also be used. Examples include Ag nanowires, Cu nanowires, and Al nanowires. In the case of Ag nanowires, the light transmittance is, for example, 89% or more, and the sheet resistance is The resistance value can be realized to be 40Ω / □ or more and 100Ω / □ or less. Nanowires have high transmittance, so they can be used for electrodes in display elements, such as pixel electrodes and common electrodes. Alternatively, the metal nanowires may be used.

[0057] A display unit 32 is provided on the substrate 31. The display unit 32 is arranged in a matrix. The pixel 33 preferably includes a plurality of sub-pixel circuits. The sub-pixel circuits are electrically connected to the display elements. Preferably, the pixel 32 includes a circuit 34 electrically connected to the pixels 33. The circuit 34 is, for example, For example, a circuit that functions as a gate driver circuit can be applied. At least one of the circuit 32 and the circuit 34 has a function of supplying a signal from the outside. It is preferable to mount an IC that functions as a source driver circuit on the substrate 31 or the FPC 42. The IC may be mounted on the substrate 31 by the COG method, or the FP on which the IC is mounted may be mounted. C42, TAB, TCP, etc. can also be installed.

[0058] In the touch panel module according to one embodiment of the present invention, a touch operation is performed by a touch sensor 22. The position information can be output based on the change in capacitance when the sensor is touched. This allows images to be displayed.

[0059] [Cross-section example 1] An example of a cross-sectional configuration of the touch panel module 10 will be described below with reference to the drawings. The touch panel module 10 exemplified below uses a horizontal electric field type liquid crystal display as a display element. This is an application of the element.

[0060] FIG. 2 is a schematic cross-sectional view of the touch panel module 10. In FIG. an area including the FPC 42, an area including the circuit 34, an area including the display unit 32, and an FPC 41 1 shows a cross section of a region including the above.

[0061] The substrate 21 and the substrate 31 are bonded together by an adhesive layer 141. A liquid crystal 152 is sealed in the area surrounded by the substrate 31 and the adhesive layer 141 .

[0062] Between the substrate 31 and the substrate 21, there is a touch sensor 22 including a conductive layer 23 and a conductive layer 24. A connection portion 101, a wiring 29, a display element 60, a transistor 201, a transistor 202, and a capacitor A capacitance element 203, a connection portion 204, wiring 35, etc. are provided.

[0063] On the substrate 31, insulating layers such as an insulating layer 211, an insulating layer 212, an insulating layer 213, and an insulating layer 214 are formed. A part of the insulating layer 211 serves as a gate insulating layer for each transistor. The insulating layer 212 functions as a dielectric of the capacitor element 203. The insulating layer 213 and the insulating layer 214 are provided to cover the transistors, the capacitor element 203, and the like. The insulating layer 214 functions as a planarizing layer. In the case where the insulating layer covering the capacitor, etc. is an insulating layer 212, an insulating layer 213, and an insulating layer 214, However, the present invention is not limited to this and may have four or more layers, or may have a single layer or two layers. The insulating layer 214, which functions as a planarizing layer, may not be provided if it is not necessary. .

[0064] In addition, on the substrate 31, a conductive layer 221, a conductive layer 222, a conductive layer 223, a semiconductor layer 231, and a semiconductor layer 232 are formed. In this embodiment, a plurality of conductive layers 151 and the like are formed by processing the same conductive film. In some cases, layers will be described with the same reference numerals.

[0065] The conductive layer 221 may be a gate electrode of each transistor, one electrode of the capacitor 203, or The conductive layer 222 can be used as a source electrode or a It can be used as a drain electrode, the other electrode of the capacitor 203, a wiring, or the like. The conductive layer 223 can be used as another gate electrode of each transistor, wiring, etc. The semiconductor layer 231 can be used as a semiconductor layer of a transistor, or the like.

[0066] FIG. 2 shows a cross section of one subpixel as an example of the display unit 32. is a sub-pixel that exhibits red, a sub-pixel that exhibits green, or a sub-pixel that exhibits blue. For example, the subpixel shown in FIG. 02, a capacitance element 203, a display element 60, and a colored layer 131R. The transistor 202, the capacitance element 203, wiring, and the like constitute a sub-pixel circuit.

[0067] FIG. 2 shows an example of the circuit 34 in which a transistor 201 is provided.

[0068] In FIG. 2, as an example of a transistor 201 and a transistor 202, a channel is formed. The semiconductor layer 231 is sandwiched between two gate electrodes (conductive layer 221 and conductive layer 223). This is an example of applying the electric field. Compared to other transistors, this type of transistor has a It is possible to increase the effective mobility and increase the on-current. It is possible to manufacture a circuit capable of high-speed operation. Furthermore, the area occupied by the circuit portion can be reduced. By using a transistor with a large on-state current, Even if the number of wirings increases when the touch panel is made larger or more precise, It is possible to reduce the signal delay in the display and suppress display unevenness.

[0069] For ease of explanation, in FIG. 2 and other figures, the transistor 20 is shown directly below the display element 60. In the case of a reflective liquid crystal display device, the following is shown: In this way, the transistors, the capacitance elements, or the wirings that constitute the circuit and the display element 60 By overlapping the two, the aperture ratio can be increased. In this case, a layer containing a light-transmitting material is disposed below the display element 60, and the transistor 20 It is preferable that the capacitor element 203 and the like are not disposed.

[0070] In the case of a reflective liquid crystal display device, the conductive layer 151 is By arranging the semiconductor layer 231 of the transistor 202 so as to overlap with the semiconductor layer 231, the aperture ratio of the subpixel can be increased. In this case, the conductive layer 223 is provided between the conductive layer 151 and the semiconductor layer 231. The conductive layer 223 is preferably arranged so that the influence of the electric field of the conductive layer 151 is not transmitted to the semiconductor layer 231. In addition, when the conductive layer 223 is not provided, for example, As shown in FIG. 3, the semiconductor layer 231 and the conductive layer 151 are disposed so as not to overlap each other. It is preferable to do so.

[0071] Note that the transistors in the circuit 34 and the transistors in the display unit 32 have the same structure. The transistors in the circuit 34 may all have the same structure. Alternatively, transistors having different structures may be used in combination. The multiple transistors may all have the same structure, or may have different structures. A combination of these may also be used.

[0072] At least one of the insulating layers 212 and 213 that cover the transistors is resistant to water and hydrogen. It is preferable to use a material in which impurities are not easily diffused, such as the insulating layer 212. In this case, the insulating layer 213 can function as a barrier film. It is possible to effectively suppress the diffusion of impurities into the transistor from the outside. This makes it possible to realize a highly reliable touch panel.

[0073] FIG. 2 shows a display element 60 with FFS (Fringe Field Switching) The display element 60 is a liquid crystal element in which a liquid crystal display mode is applied. The liquid crystal layer 152 and the conductive layer 153 are connected to each other. The resulting electric field can control the orientation of the liquid crystal.

[0074] A conductive layer 153 is disposed on the insulating layer 214. An insulating layer An insulating layer 215 is provided, and a conductive layer 151 is provided on the insulating layer 215. The conductive layer 151 is Through the openings provided in the insulating layers 215, 214, 213, and 212, It is electrically connected to one of the source and drain of the transistor 202 .

[0075] The conductive layer 151 has a comb-like upper surface shape or an upper surface shape with slits (planar shape The conductive layer 153 is disposed so as to overlap with the conductive layer 151. In the area overlapping with the colored layer 131R, the conductive layer 151 is disposed on the conductive layer 153. There are some parts that are not included.

[0076] In FIG. 2, the conductive layer 151 functions as a pixel electrode, and the conductive layer 153 functions as a common electrode. In addition, the conductive layer 151 provided in the upper layer and having a comb-tooth or slit-like upper surface shape is Alternatively, the conductive layer 153 provided below can be used as a pixel electrode. In that case, the conductive layer 153 is electrically connected to one of the source and drain of the transistor 202. Just connect it to.

[0077] On the surface of the substrate 21 facing the substrate 31, an insulating layer 126, a light-shielding layer 115, an insulating layer 127, and a conductive layer 23, conductive layer 24, conductive layer 25, wiring 29, insulating layer 121, insulating layer 123, spacer 12 4. Colored layers 131R, 131B, etc. are provided.

[0078] 2 shows a cross section of the intersection of the conductive layer 23 and the conductive layer 24. The conductive layer 25 is disposed on the same plane as the conductive layer 23 and the conductive layer 24. An insulating layer 121 is provided on the conductive layer 25. A part of the conductive layer 25 overlaps with the conductive layer 23. The two conductive layers 24 sandwiching the layer 23 are connected to the conductive layer 25 through an opening provided in the insulating layer 121. Electrically connected.

[0079] The colored layer 131R and the like are provided on the substrate 31 side of the conductive layer 27. An insulating layer 123 is provided covering the above.

[0080] In FIG. 2, the display element 60 is a conductive layer 151, a part of a conductive layer 153, and a conductive layer 154 disposed above the conductive layer 151. The display is made up of a liquid crystal 152 placed on the display.

[0081] In addition, the conductive layer 151, the insulating layer 214, etc., have a surface that contacts the liquid crystal 152. An alignment film for controlling the alignment of 2 may be provided.

[0082] In the configuration shown in FIG. 2, the conductive layer 23 is disposed so as not to overlap the display element 60. In other words, the conductive layer 23 is arranged so that the opening of the conductive layer 23 and the display element 60 overlap each other. The conductive layer 23 is disposed between the adjacent sub-pixels. In other words, the second conductive layer 151 is disposed so as to overlap with the region between the two conductive layers 151. Although the conductive layer 23 is shown as an example here, the conductive layer 24 and the conductive layer 25 can also be formed in the same manner. , it is preferable that they are arranged so as not to overlap with the display element 60.

[0083] For example, when the display element 60 is a reflective liquid crystal element, the conductive layer 151 and the conductive layer 15 3 or both of them can be made of a material that reflects visible light. The aperture ratio can be increased by using a material that reflects visible light on the other side. Alternatively, a material that reflects visible light may be used for the conductive layer 151, and a material that transmits visible light may be used for the conductive layer 152. With this configuration, the display element 60 can be a reflective liquid crystal element.

[0084] On the other hand, when the display element 60 is a transmissive liquid crystal element, the conductive layer 151 and the conductive layer 15 3 or both of them can be made of a material that transmits visible light. When a material that transmits visible light is used for the conductive layer 153, the aperture ratio can be increased. Alternatively, a material that transmits visible light may be used for the conductive layer 151, and a material that blocks visible light may be used for the conductive layer 152.

[0085] When the display element 60 is a transmissive liquid crystal element, for example, a polarizing plate (not shown) is disposed so as to sandwich the display unit. The light from the backlight placed outside the polarizing plate is reflected by the polarizing plate. At this time, the liquid crystal 1 is turned on by a voltage applied between the conductive layer 151 and the conductive layer 153. By controlling the orientation of the polarizer 52, the optical modulation of light can be controlled. The intensity of the emitted light can be controlled. Also, the incident light is specific to the colored layer 131R. By absorbing light outside this wavelength range, the emitted light becomes, for example, red light. do.

[0086] In addition to the polarizing plate, for example, a circular polarizing plate can be used. For example, a linear polarizing plate and a quarter-wave retardation plate can be laminated. This makes it possible to reduce viewing angle dependence.

[0087] Here, the display element 60 is a display element having a thickness direction substantially perpendicular to the thickness direction of the touch panel module 10. A pair of electrodes is arranged in the direction of the liquid crystal 152, and an electric field is applied to the liquid crystal 152 in a direction approximately perpendicular to the thickness direction. The method of arranging the electrodes is not limited to this. A method of determining whether the

[0088] As a liquid crystal element applicable to the display element 60, a liquid crystal element to which various modes are applied is used. For example, VA (Vertical Alignment) mode, TN (Twisted Nematic) mode, IPS (In-Plane-Switch ing) mode, FFS (Fringe Field Switching) mode, A SM(Axially Symmetrically aligned Micro-cell) Mode, OCB (Optically Compensated Birefringe nce) mode, FLC (Ferroelectric Liquid Crystal ) mode, AFLC (AntiFerroelectric Liquid Cryst A liquid crystal element to which a liquid crystal display (a) mode or the like is applied can be used.

[0089] In addition, the touch panel module 10 may include a normally black type liquid crystal display device, for example. A transmissive liquid crystal display device using a vertical alignment (VA) mode may be used. The method is MVA (Multi-Domain Vertical Alignment) t) mode, PVA (Patterned Vertical Alignment) mode mode, ASV mode, etc. can be used.

[0090] The liquid crystal element is an element that controls the transmission or non-transmission of light by the optical modulation action of liquid crystal. The optical modulation of liquid crystals is caused by the electric field applied to the liquid crystal (horizontal electric field, vertical electric field, The liquid crystal used in the liquid crystal element is Thermotropic liquid crystal, low molecular weight liquid crystal, polymer liquid crystal, polymer dispersed liquid crystal (PDLC:P Polymer Dispersed Liquid Crystal), Ferroelectric Liquid Crystal, Antiferroelectric liquid crystals can be used. These liquid crystal materials can be cholesteric or These phases include nematic phase, smectic phase, cubic phase, chiral nematic phase, isotropic phase, etc.

[0091] As the liquid crystal material, either a positive type liquid crystal or a negative type liquid crystal may be used. It is only necessary to use an optimum liquid crystal material depending on the mode and design to be applied.

[0092] In addition, when the in-plane switching method is adopted, liquid crystal that exhibits a blue phase without using an alignment film may be used. The blue phase is one of the liquid crystal phases. When the temperature of a cholesteric liquid crystal is increased, the cholesteric The blue phase appears just before the transition from the black phase to the isotropic phase. In order to improve the temperature range, a liquid crystal composition containing a chiral agent of several weight percent or more is used. The liquid crystal composition containing the liquid crystal exhibiting the blue phase and the chiral agent is used in the liquid crystal layer. The liquid crystal composition containing the liquid crystal exhibiting the blue phase and the chiral agent has a short wavelength and is optically isotropic. The composition does not require alignment treatment and has low viewing angle dependency. Also, no alignment film is required. This eliminates the need for rubbing, preventing electrostatic damage caused by rubbing. This can prevent the liquid crystal display device from being damaged or broken during the manufacturing process.

[0093] The conductive layer 27 is provided to cover the area of ​​the display unit 32 where the conductive layer 25 is not provided. is.

[0094] As shown in FIG. 2 and other figures, the conductive layers 25 and 27 are formed by processing the same film. It is preferable that

[0095] The conductive layers 25 and 27 are preferably made of a conductive material that transmits visible light.

[0096] The conductive layer 25 and the conductive layer 27 that transmit visible light are made of a conductive material that contains, for example, a metal oxide. For example, among the conductive materials having translucency described later, a metal oxide is used. There can be.

[0097] Alternatively, the conductive layer 25 and the conductive layer 27 may contain the same metal element as other conductive layers or semiconductor layers. It is preferable to use a metal oxide. When an oxide semiconductor is used for the semiconductor layer of a transistor, the conductive acid containing the metal element contained therein is It is preferred to apply a compound.

[0098] By using a conductive metal oxide as the conductive layer 27, oxidation of the surface is suppressed. This makes it possible to realize a highly reliable touch panel module 10.

[0099] In FIG. 2, the conductive layer 27 is disposed so as to overlap the conductive layer 23, the conductive layer 24, etc. Therefore, the conductive layer 27 may be provided with a common potential, a ground potential, or any other constant potential. When the conductive layers 23 and 24 are driven, the electrical current generated on the substrate 31 side is At the same time, the sub-pixel circuit provided on the substrate 31 side can be driven. When the insulating layer 24 is inserted, electrical noise generated on the substrate 21 side can be blocked.

[0100] At this time, if a constant potential that does not affect the switching of the liquid crystal 152 is applied to the conductive layer 27, For example, the ground potential, the common potential, or any constant potential can be used. For example, the conductive layer 27 and the conductive layer 153 may be set to the same potential.

[0101] In addition, by applying an appropriate potential to the conductive layer 27, the conductive layer 151 and the conductive layer 153 The direction of the electric field (direction of the electric field lines) generated between the layers is reduced in the thickness direction, making it more effective. In this way, the electric field can be oriented in a direction approximately perpendicular to the thickness (horizontal direction). This suppresses alignment defects in the liquid crystal 152 and prevents problems such as light leakage. can be done.

[0102] A connection portion 204 is provided in an area near the end of the substrate 31. 2, the FPC 42 is electrically connected to the wiring 35 via the connecting layer 242. In this example, the connection portion 204 is formed by laminating the conductive layer 223. A connection portion 101 is provided in an area close to the end of the connection layer 21. In the configuration shown in FIG. The connection portion 101 is formed by laminating a conductive layer obtained by processing the same conductive film as the conductive layer 25. An example of the configuration is shown.

[0103] In FIG. 2, as an example, a conductive layer 221 functioning as wiring and a conductive layer 222 functioning as wiring are 2 shows a cross-sectional structure of an intersection with the conductive layer 222. For example, the conductive layer 221 may function as a scanning line. The conductive layer 22 is used as one or both of a wiring functioning as a capacitance line and a wiring functioning as a capacitance line. 2 can be used as wiring that functions as a signal line.

[0104] Here, above the substrate 21, there is a substrate that is directly touched by a detection object such as a finger or a stylus. In this case, a polarizing plate or a circular polarizing plate may be provided between the substrate 21 and the substrate. In that case, it is preferable to provide a protective layer (ceramic coat, etc.) on the substrate. The protective layer is preferably made of, for example, silicon oxide, aluminum oxide, yttrium oxide, Inorganic insulating materials such as yttria-stabilized zirconia (YSZ) can be used. The substrate may be made of tempered glass. The tempered glass may be tempered by an ion exchange method, an air-cooling tempering method, or the like. The material is subjected to physical or chemical treatment and has its surface subjected to compressive stress. This can be done.

[0105] The insulating layer 123 prevents impurities such as pigments contained in the colored layer 131R from diffusing into the liquid crystal 152. It functions as an overcoat to prevent this.

[0106] The spacer 124 is provided on the insulating layer 123 and keeps the distance between the substrate 21 and the substrate 31 constant. In FIG. 2, the spacer 124 and the structure on the substrate 31 side (for example, For example, the conductive layer 151 and the insulating layer 214 are not in contact with each other. In addition, although an example in which the spacer 124 is provided on the substrate 21 side has been shown here, For example, the conductive layers 151 of two adjacent sub-pixels may be provided on the side of the conductive layer 151. Alternatively, a granular spacer may be used as the spacer 124. Although materials such as silica can be used for the spacer, organic resins, rubber, etc. In this case, the granular spacers are preferably made of a material having elasticity of 0.1 to 1.0 mm. The shape may become irregular.

[0107] Here, as shown in FIG. 2, the spacer 124 and the conductive layer 23 (or the conductive layer 24, the conductive layer 2 5) is preferably arranged so as to overlap with the portion where the display element 60 is arranged. Since the spacer 124 is not disposed in the first region, the light is absorbed, refracted, or Since the light is not scattered, the light extraction efficiency can be improved.

[0108] In the touch panel module 10 according to one embodiment of the present invention, the conductive layer 23 and the conductive layer 24 Also, on the substrate 21 side, a light blocking layer 115 is provided to suppress color mixing between adjacent sub-pixels. Therefore, the conductive layers 23 and 24 are visually recognized by reflecting external light due to the light-shielding layer 115. Therefore, the conductive layer 23 and the conductive layer 24 can be prevented from being deteriorated. For this purpose, a material that reflects visible light can be used. Alternatively, a material that transmits visible light can be used. Even if the conductive layer 23 and the conductive layer 24 are arranged, the conductive layer 23 and the conductive layer 24 may be arranged in a portion where the conductive layer 23 and the conductive layer 24 are not arranged. Since the boundary between the two is not visible, visibility can be improved.

[0109] On the other hand, since the conductive layer 27 is made of a material that transmits visible light, the display element 60 and The light transmitted through the colored layer 131R etc. is transmitted through the conductive layer 27 and emitted to the outside.

[0110] In addition, in FIG. 2, a configuration in which the insulating layer 123 is provided to cover the colored layer 131R etc. is shown. Alternatively, the insulating layer 123 may be omitted. This makes it possible to omit the photomask and patterning steps required for fabricating GaN HEMT 0.

[0111] In addition, FIG. 2 shows a case where the conductive layer 27 is disposed on the substrate 21 side of the colored layer 131R. However, as long as these are arranged in a stacked manner, the present invention is not limited to this configuration.

[0112] In the touch panel module 10 shown in FIG. 3, the conductive layer 27 is disposed on the substrate 3 rather than the colored layer 131R. An example of placement on side 1 is shown.

[0113] 4 and 5, the conductive layer 27 is disposed higher than the insulating layer 123. An example in which it is arranged on the substrate 31 side is shown.

[0114] 4 and 5 are different in that the shapes of the openings provided in the insulating layer 123 are different.

[0115] In FIG. 4, the conductive layer 25 is formed so that the conductive layer 25 does not overlap the insulating layer 123. An opening is formed in the insulating layer 123, including at the position and its vicinity.

[0116] On the other hand, in FIG. 5, a part of the insulating layer 123 is disposed between the conductive layer 25 and the insulating layer 121. In this case, the insulating layer 123 is processed as shown in FIG. The layer 24 is electrically connected to the insulating layer 121 through an opening provided in the insulating layer 123. do.

[0117] FIG. 6 shows an example in which the colored layer 131R and the like are disposed closer to the substrate 21 than the conductive layer 27. In the configuration shown in FIG. 6, an insulating layer 127 is provided to cover the colored layer 131R. The edge layer 127 covers the steps of the colored layer 131R, etc., so that the conductive layer 23 and the conductive layer 2 The flatness of the surface on which the film is formed, such as 4, is improved, and the uniformity of the detection sensitivity can be improved.

[0118] The above is the description of the first cross-sectional configuration example.

[0119] [Cross-section example 2] In the following, a cross-sectional configuration example that is partially different from the above will be described. An example of a cross-sectional structure in the case where an oxide semiconductor is used for the conductive layer 25 and the conductive layer 27 will be described. do.

[0120] 7 is different from FIG. 2 in that it has an insulating layer 122 that covers the conductive layer 25, the conductive layer 27, etc. The main differences are:

[0121] The conductive layer 25 and the conductive layer 27 are configured to include an oxide semiconductor having a low resistance. In particular, it is preferable that the semiconductor layer of the transistor of the touch panel module 10 is provided with an oxide. In the case of using a nitride semiconductor, it is preferable to use an oxide semiconductor having a lower resistivity than the nitride semiconductor. stomach.

[0122] For example, the resistance of the conductive layer 27 can be reduced by a method for controlling the resistivity of an oxide semiconductor, which will be described later. It is possible.

[0123] In addition, the insulating layer 122 covering the conductive layer 25 and the conductive layer 27 contains a large amount of hydrogen. In particular, the insulating layer 122 is preferably an insulating film containing silicon nitride. It is preferable to do so.

[0124] The conductive layer 27 is made of a conductive metal oxide or a low-resistance oxide semiconductor. This suppresses oxidation of the surface, resulting in a highly reliable touch panel module 10. can.

[0125] 8, 9, 10, and 11 are diagrams showing the insulating layer in FIG. 3, FIG. 4, FIG. 5, and FIG. 6, respectively. 8 to 11, the conductive layer 25 and the conductive The layer 27 is an oxide layer containing the same metal as the semiconductor layer and the conductive layer 223 of the transistor. It is configured to include a semiconductor.

[0126] The above is the description of the cross-sectional configuration example 2.

[0127] [Variations] In the following, a transistor in a touch panel of one embodiment of the present invention has a top gate structure. Examples of transistors of this type are shown in FIGS.

[0128] The touch panel module shown in FIG. 12 has a transistor The main difference is the structure of 301 and 302. Other than the transistor structure, the structure is the same as that shown in FIG. Since the embodiments are almost the same, the same reference numerals are used for the same parts, and detailed explanations of the common parts are omitted. It has been decided that.

[0129] The touch panel module shown in FIG. 13 is a top-gate type in the configuration shown in FIG. 1 shows an example in which a transistor of the above type is applied.

[0130] 12 and 13 show a case where a liquid crystal element to which the FFS mode is applied is used as the display element 60. The display element 60 includes a conductive layer 151, a liquid crystal layer 152, and a conductive layer 153. Yes.

[0131] The transistors 301 and 302 are formed by forming a semiconductor layer on a buffer layer 300 and a gate insulating layer. and a gate insulating layer that overlaps with the semiconductor layer via the gate electrode. A conductive layer, an insulating layer covering the conductive layer functioning as a gate electrode, and a conductive layer functioning as a source electrode The gate electrode has a conductive layer and a conductive layer that functions as a drain electrode. The region of the semiconductor layer that is not exposed to the gate electrode is made to have a lower resistance than the channel forming region that overlaps with the gate electrode. is preferred.

[0132] When an oxide semiconductor layer is used, a region of the semiconductor layer that does not overlap with the gate electrode is used as a channel forming region. In order to make the region lower resistance than the gate electrode, impurity elements (rare It is preferable to add a rare gas such as fluorine, nitrogen, phosphorus, boron, or hydrogen. As the impurity, helium, argon, etc. can be used. A method using plasma or an ion implantation method can be used. and a part of the oxide semiconductor layer is doped with an impurity element in a self-aligned manner using the gate electrode as a mask. This is preferable because it can reduce the resistance.

[0133] The capacitor 203 includes a conductive layer functioning as a gate electrode and a source electrode or a drain electrode. Conductive layers functioning as poles and an insulating layer disposed between them are formed as a dielectric. The connection portion 204 is formed by laminating a part of the wiring 35 and the conductive layer 223. The conductive layer 223 is formed by sputtering in an atmosphere containing oxygen gas. In this way, oxygen or excess oxygen is added to the insulating layer 212, which is a surface on which the conductive layer 223 is to be formed. In addition, oxygen vacancies in the oxide semiconductor layers of the transistors 301 and 302 are compensated for by the excess oxygen. In addition, the insulating layer 212 and / or the insulating layer 213 can be filled with the insulating material, thereby realizing a highly reliable transistor. In the case where excess oxygen is supplied to the oxide semiconductor layer, the insulating layer 213 is It is preferable to use a material that can suppress transmission.

[0134] The buffer layer 300 is made of an insulating material such as silicon oxide or metal oxide. The metal oxides used as 300 include aluminum, indium, gallium, zinc, etc. The buffer layer 300 is made of an oxide containing one or more of the following: water, hydrogen, etc. It is preferable to use a material that is difficult for impurities to diffuse. With this structure, the transistor 301 can function as an anti-reflection film. , 302, it is possible to effectively suppress the diffusion of impurities from the outside, This makes it possible to realize a highly reliable touch panel.

[0135] The above is a description of the modified example.

[0136] [About each component] Each of the above components will be described below.

[0137] {substrate} The substrate of the touch panel can be made of a material having a flat surface. The substrate on the side from which the light is extracted is made of a material that transmits the light. For example, glass or quartz is used. Materials such as ceramic, sapphire, and organic resin can be used.

[0138] By using a thin substrate, the touch panel can be made lighter and thinner. Furthermore, by using a substrate having a thickness sufficient to provide flexibility, a flexible touch panel can be obtained. This can be achieved.

[0139] Examples of glass include non-alkali glass, barium borosilicate glass, and aluminophore glass. Usable materials include silicate glass.

[0140] Examples of materials having flexibility and transparency to visible light include materials having flexibility. Thickness of glass, polyethylene terephthalate (PET), polyethylene naphthalate Polyester resins such as (PEN), polyacrylonitrile resins, polyimide resins, methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PE S) Resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamide imide resin, polyvinyl chloride resin, polytetrafluoroethylene (PTFE) resin, etc. In particular, it is preferable to use a material with a low thermal expansion coefficient, such as polyamide-imide. Resin, polyimide resin, PET, etc. can be suitably used. Uses substrates impregnated with resin or substrates with inorganic fillers mixed into organic resin to reduce the coefficient of thermal expansion Since the substrate using such a material is light in weight, The touch panel can also be made lighter.

[0141] In addition, the substrate on the side from which light is not extracted does not need to have light-transmitting properties. In addition to the above substrates, metal substrates, ceramic substrates, semiconductor substrates, etc. can also be used. Metallic and alloy materials have high thermal conductivity and easily conduct heat to the entire encapsulation substrate. This is preferable because it can suppress local temperature rises in the touch panel. For this purpose, the thickness of the metal substrate is preferably 10 μm or more and 200 μm or less, and more preferably 20 μm or more and 50 μm or less. It is more preferable that the thickness is 0 μm or less.

[0142] The material constituting the metal substrate is not particularly limited, but examples thereof include aluminum, copper, and nickel. Metals such as nickel, or alloys such as aluminum alloys and stainless steel are preferably used. It is possible.

[0143] In addition, the surface of the metal substrate is oxidized or an insulating film is formed on the surface to perform insulation treatment. For example, a coating method such as spin coating or dipping, an electrodeposition method, or the like may be used. The insulating film may be formed by deposition, evaporation, sputtering, or the like. In addition to leaving it in air or heating it, an oxide film is formed on the surface of the substrate by anodizing, etc. This is also fine.

[0144] A hard coat layer (e.g. For example, a silicon nitride layer, or a layer of a material capable of dispersing pressure (for example, an aramid resin layer, etc.) In addition, the display element may be laminated with other layers to prevent deterioration of the life of the display element due to moisture, etc. In order to suppress this, an insulating film with low water permeability may be laminated on a flexible substrate. For example, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, etc. Mechanically insulating materials can be used.

[0145] The substrate may be formed by laminating a plurality of layers. In particular, the substrate may have a glass layer. This improves the barrier properties against water and oxygen, making it possible to create a highly reliable touch panel. do.

[0146] For example, a substrate having a glass layer, an adhesive layer, and an organic resin layer laminated thereon from the side closest to the display element is used. The thickness of the glass layer is preferably 20 μm or more and 200 μm or less. The thickness of the glass layer is 25 μm or more and 100 μm or less. It is possible to simultaneously achieve high barrier properties and flexibility. The thickness of the organic resin layer is 10 μm. The thickness of such an organic resin is set to be 200 μm or more, and preferably 20 μm or more and 50 μm or less. By providing this layer, it is possible to suppress breakage and cracks in the glass layer and improve the mechanical strength. By applying such a composite material of glass material and organic resin to a substrate, This makes it possible to produce a highly reliable and flexible touch panel.

[0147] {Transistor} The transistor includes a conductive layer functioning as a gate electrode, a semiconductor layer, and a A conductive layer that functions as a drain electrode and a conductive layer that functions as a gate insulating layer. The above describes the case where a bottom-gate transistor is used. is.

[0148] Note that there is no particular limitation on the structure of a transistor included in a touch panel of one embodiment of the present invention. For example, the transistor may be a staggered type transistor or an inverted staggered type transistor. In addition, the transistor structure may be either a top gate type or a bottom gate type. The semiconductor material used for the transistor is not particularly limited, and may be, for example, an oxide semiconductor, a silicon Examples of such elements include silicon and germanium.

[0149] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a partially crystalline region) If a semiconductor having crystallinity is used, the This is preferable because it is possible to suppress deterioration of the resistor characteristics.

[0150] In addition, the semiconductor material used in the transistor is, for example, a Group 14 element, a compound semiconductor, or the like. A conductor or an oxide semiconductor can be used for the semiconductor layer. A conductor, a semiconductor containing gallium arsenide, an oxide semiconductor containing indium, or the like can be used.

[0151] In particular, it is preferable to use an oxide semiconductor having a band gap larger than that of silicon. If a semiconductor material with a wider band gap and lower carrier density than silicon is used, This is preferable because it is possible to reduce the current in the off state of the transistor.

[0152] For example, the oxide semiconductor may contain at least indium (In) or zinc (Zn It is preferable that the oxide contains In-M-Zn (wherein M is Al, Ti, or G). a, Ge, Y, Zr, Sn, La, Ce, Hf or Nd (metals such as Includes.

[0153] In particular, the semiconductor layer has a plurality of crystal parts, and the crystal parts have a c-axis aligned with a surface on which the semiconductor layer is formed. Or, the crystals are oriented approximately perpendicular to the upper surface of the semiconductor layer, and grain boundaries are observed between adjacent crystal parts. It is preferable to use an oxide semiconductor film that cannot be formed by the above-mentioned method.

[0154] Such an oxide semiconductor does not have crystal grain boundaries, so that when the display panel is curved, The occurrence of cracks in the oxide semiconductor film due to stress is suppressed. Such oxide semiconductors are suitable for use in touch panels that are flexible and can be curved. It can be used.

[0155] In addition, by using such a crystalline oxide semiconductor for the semiconductor layer, This suppresses fluctuations in the capacitance, thereby achieving a highly reliable transistor.

[0156] In addition, a transistor using an oxide semiconductor having a larger band gap than silicon is Due to its low off-state current, the charge stored in the capacitor connected in series with the transistor can be discharged for a long period of time. By applying such a transistor to a pixel, It is also possible to stop the driving circuit while maintaining the gradation of each pixel. A display device with reduced power consumption can be realized.

[0157] The semiconductor layer may be, for example, at least indium, zinc, and M (Al, Ti, Ga, Y, Zr The film is represented by In-M-Zn oxide containing metals such as In, La, Ce, Sn or Hf. In addition, it is preferable that the oxide semiconductor layer is formed on the oxide semiconductor layer. It is preferable to include a stabilizer therewith to reduce

[0158] The stabilizer includes the metals listed under M above, such as gallium, tin, hafnium, etc. Other stabilizers include tungsten, aluminum, or zirconium. are the lanthanides: lanthanum, cerium, praseodymium, neodymium, samarium, Europium, Gadolinium, Terbium, Dysprosium, Holmium, Erbium, Examples include thulium, ytterbium, and lutetium.

[0159] Examples of oxide semiconductors constituting the semiconductor layer include In-Ga-Zn oxides, In- Al-Zn oxide, In-Sn-Zn oxide, In-Hf-Zn oxide, In-L a-Zn oxide, In-Ce-Zn oxide, In-Pr-Zn oxide, In-Nd -Zn oxide, In-Sm-Zn oxide, In-Eu-Zn oxide, In-Gd- Zn-based oxide, In-Tb-Zn-based oxide, In-Dy-Zn-based oxide, In-Ho-Z n-type oxides, In-Er-Zn-type oxides, In-Tm-Zn-type oxides, In-Yb-Zn In-Lu-Zn ​​oxide, In-Sn-Ga-Zn oxide, In-Hf- Ga-Zn oxide, In-Al-Ga-Zn oxide, In-Sn-Al-Zn oxide In-Sn-Hf-Zn oxide, In-Hf-Al-Zn oxide can be used. can.

[0160] In this case, the In-Ga-Zn oxide is an oxide having In, Ga, and Zn as main components. The ratio of In, Ga, and Zn does not matter. Metal elements other than n may be present.

[0161] The semiconductor layer and the conductive layer may contain the same metal element among the above oxides. By using the same metal element for the semiconductor layer and the conductive layer, the manufacturing cost can be reduced. For example, the manufacturing cost can be reduced by using metal oxide targets with the same metal composition. In addition, the etching gas or the etching gas used in processing the semiconductor layer and the conductive layer can be However, the semiconductor layer and the conductive layer may be made of the same metal element. For example, the composition of a transistor or a capacitor may differ depending on the type of the semiconductor device. During the process, metal elements in the film may be released, resulting in a different metal composition.

[0162] When the semiconductor layer is an In-M-Zn oxide, In and M, excluding Zn and O, The atomic ratio of In is preferably In when the sum of In and M is 100 atomic %. is higher than 25 atomic %, M is less than 75 atomic %, and more preferably In is 34 atomic% or higher and M less than 66 atomic%.

[0163] The semiconductor layer has an energy gap of 2 eV or more, preferably 2.5 eV or more, and more preferably In this way, the energy gap of oxide semiconductors is wide. This makes it possible to reduce the off-state current of the transistor.

[0164] The thickness of the semiconductor layer is 3 nm or more and 200 nm or less, preferably 3 nm or more and 100 nm or less. and more preferably, from 3 nm to 50 nm.

[0165] The semiconductor layer is In-M-Zn oxide (M is Al, Ti, Ga, Ge, Y, Zr, Sn, L a, Ce, Hf or Nd), the spatula used to deposit the In-M-Zn oxide film The atomic ratio of the metal elements in the ion implantation target preferably satisfies In≧M and Zn≧M. The atomic ratio of the metal elements in such a sputtering target is In:M:Z. n=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=3:1:2 are preferred. The atomic ratio of the semiconductor layers to be formed is calculated by subtracting the above-mentioned sputtering This includes a ±40% variation in the atomic ratio of metal elements contained in the target.

[0166] For the semiconductor layer, an oxide semiconductor film having a low carrier density is used. For example, , the carrier density is 1×1017 pieces / cm 3 Less than or equal to 1×10 15 pieces / cm 3 below , and more preferably 1×10 13 pieces / cm 3 Less than or equal to 1×10 11 pieces / cm 3 Less than 1×10, more preferably 10 pieces / cm 3 Less than 1 x 10 -9 pieces / cm 3 An oxide semiconductor having a carrier density of 1000 or more can be used. This is called a highly pure intrinsic or substantially highly pure intrinsic oxide semiconductor. Since the density of defect states is low, the oxide semiconductor has stable characteristics.

[0167] In addition, the semiconductor characteristics and electrical characteristics (field effect) of the required transistors are not limited to these. It is sufficient to use a material with an appropriate composition according to the required properties (e.g., the resultant mobility, threshold voltage, etc.). In order to obtain the semiconductor characteristics of a transistor, the carrier density, impurity concentration, and defect density of the semiconductor layer are determined. It is preferable to appropriately set the density, atomic ratio of metal elements to oxygen, interatomic distance, density, etc. stomach.

[0168] When silicon or carbon, which is one of the group 14 elements, is included in the semiconductor layer, This causes oxygen vacancies in the semiconductor layer, resulting in n-type conductivity. Carbon concentration (Secondary Ion Mass Spectrometry (SIMS) The concentration obtained by spectrometry is 2×10 18 atoms / cm 3 Less than or equal to 2×10 17 atoms / cm 3The following applies.

[0169] In addition, when alkali metals and alkaline earth metals combine with oxide semiconductors, they generate carriers. This may result in an increase in the off-state current of the transistor. In the conductor layer, alkali metal or alkaline earth metals obtained by secondary ion mass spectrometry The metal concentration is 1×10 18 atoms / cm 3 Less than or equal to 2×10 16 atom s / cm 3 To the following:

[0170] In addition, when nitrogen is contained in the semiconductor layer, electrons that act as carriers are generated, and the carrier density As a result, transistors using oxide semiconductors containing nitrogen For example, secondary ion mass spectrometry (SIMS) is used to The resulting nitrogen concentration is 5×10 18 atoms / cm 3 It is preferable to do the following:

[0171] The semiconductor layer may also have a non-single crystal structure, for example. -OS(C Axis Aligned-Crystalline Oxide Sem non-single crystalline, polycrystalline, microcrystalline, or amorphous structures. In terms of structure, the amorphous structure has the highest density of defect states, and the CAAC-OS has the lowest density of defect states. Low degree.

[0172] The semiconductor layer may have, for example, an amorphous structure. The molecular arrangement is disordered and has no crystalline components. Alternatively, an oxide film with an amorphous structure is, for example, It has a completely amorphous structure and does not have any crystalline parts.

[0173] In addition, the semiconductor layer may have an amorphous structure region, a microcrystalline structure region, a polycrystalline structure region, a CAA The film may be a mixed film having two or more of the C-OS region and the single crystal structure region. The mixed film may have, for example, an amorphous structure region, a microcrystalline structure region, a polycrystalline structure region, a CAAC structure region, or a mixture of the CAAC structure and the mixture of the CAAC structure and the mixture of the CAAC structure. In some cases, the compound may have two or more regions of either an -OS region or a single crystal structure region. The mixed film may have, for example, an amorphous structure region, a microcrystalline structure region, a polycrystalline structure region, a CAAC structure region, or a mixture of the CAAC structure and the mixture of the CAAC structure and the mixture of the CAAC structure. - The material may have a laminated structure of two or more regions of either an OS region or a single crystal structure region. do.

[0174] Alternatively, silicon is preferably used as a semiconductor in which a channel of a transistor is formed. Although amorphous silicon may be used as silicon, silicon having crystallinity is particularly preferred. It is preferable to use silicon. For example, microcrystalline silicon, polycrystalline silicon, single crystal silicon, etc. In particular, polycrystalline silicon has a lower temperature than single crystal silicon. It has high field effect mobility and high reliability compared to amorphous silicon. By applying such a polycrystalline semiconductor to the pixels, the aperture ratio of the pixels can be improved. Even if the display panel has extremely high resolution, the gate drive circuit and the source drive circuit can be This makes it possible to form the circuits and pixels on the same substrate, reducing the number of parts that make up electronic devices. It is possible.

[0175] {Conductive layer} In addition to the gate, source, and drain of the transistor, the various wiring that makes up the touch panel Materials that can be used for conductive layers such as wires and electrodes include aluminum, titanium, Chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, Examples of the material include metals such as tungsten, or alloys that contain tungsten as the main component. Films containing these materials can be used as single layers or as laminate structures. A single-layer structure of an aluminum film containing titanium, a two-layer structure of an aluminum film laminated on a titanium film, Two-layer structure with aluminum film laminated on tungsten film, copper-magnesium-aluminum Two-layer structure with copper film laminated on aluminum alloy film, two-layer structure with copper film laminated on titanium film, tungsten A two-layer structure in which a copper film is laminated on a titanium film, a titanium nitride film, and an aluminum film are laminated on top of that. An aluminum film or a copper film is laminated, and then a titanium film or a titanium nitride film is formed on the aluminum film or a copper film. A three-layer structure consisting of a molybdenum film or molybdenum nitride film and an aluminum film or A three-layer structure is formed by laminating a copper film on a molybdenum film or a molybdenum nitride film on top of the copper film. In addition, oxides such as indium oxide, tin oxide, and zinc oxide may also be used. In addition, copper containing manganese is preferred because it improves the controllability of the shape by etching. It is nice.

[0176] Examples of the conductive material having a light-transmitting property include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides such as indium zinc oxide, zinc oxide, zinc oxide doped with gallium, or Graphene can be used. Alternatively, gold, silver, platinum, magnesium, nickel, tin, etc. such as tin, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium. Metallic materials and alloy materials containing the metallic materials can be used. Alternatively, a metal material, an alloy material (or a combination thereof) may be used. In the case of using these nitrides, it is sufficient to make them thin enough to have light transmission. A laminated film of a material can be used as the conductive layer. For example, a silver-magnesium alloy and an insulator can be used. It is preferable to use a laminated film of dilute tin oxide or the like, since the electrical conductivity can be increased.

[0177] Alternatively, the conductive layer is preferably made of an oxide semiconductor similar to that of the semiconductor layer. When the conductive layer is formed, the conductive layer exhibits a lower electrical resistance than the region in which the channel of the semiconductor layer is formed. , is preferably formed.

[0178] For example, such a conductive layer may be the conductive layer 25, the conductive layer 27, the second gate electrode of the transistor, The conductive layer 223 functioning as an electrode can be applied to the conductive layer 223. The present invention can also be applied to the conductive layer of the above-mentioned.

[0179] {Method for controlling resistivity of oxide semiconductor} The oxide semiconductor film that can be used for the semiconductor layer and the conductive layer has oxygen vacancies and / or is a semiconductor material whose resistivity can be controlled by the concentration of impurities such as hydrogen and water in the film. Therefore, a process that increases oxygen deficiency and / or impurity concentration in the semiconductor layer and the conductive layer, or by selecting a treatment that reduces oxygen vacancies and / or impurity concentrations, respectively. The resistivity of the oxide semiconductor film can be controlled.

[0180] Specifically, a plasma treatment is performed on an oxide semiconductor film used for a conductive layer, and the oxide semiconductor Increase in oxygen vacancies in the film and / or impurities such as hydrogen and water in the oxide semiconductor film By increasing the amount of the fluorine atom, an oxide semiconductor film having a high carrier density and a low resistivity can be obtained. In addition, an insulating film containing hydrogen may be formed in contact with the oxide semiconductor film. By diffusing hydrogen from the insulating film to the oxide semiconductor film, the carrier density is increased and the resistivity is reduced. It is possible to provide an oxide semiconductor film with low thermal conductivity.

[0181] On the other hand, the semiconductor layer that functions as the channel region of the transistor is in contact with the insulating film that contains hydrogen. At least one of the insulating films in contact with the semiconductor layer contains oxygen. Then, by applying an insulating film capable of releasing oxygen, oxygen can be supplied to the semiconductor layer. The semiconductor layer to which oxygen is supplied has resistance because oxygen vacancies in the film or at the interface are filled. The insulating film capable of releasing oxygen can be an oxide semiconductor film having high resistivity. For example, a silicon oxide film or a silicon oxynitride film can be used.

[0182] In order to obtain an oxide semiconductor film with low resistivity, an ion implantation method, an ion doping method, etc. Using techniques such as plasma immersion ion implantation, hydrogen, boron, and lithium are implanted. Nitrogen or nitrogen may be implanted into the oxide semiconductor film.

[0183] In order to obtain an oxide semiconductor film with low resistivity, the oxide semiconductor film is subjected to plasma treatment. For example, the plasma treatment may be performed using a rare gas (He, Ne, A Plasma using gas containing one or more of the following: r, Kr, Xe), hydrogen, and nitrogen. More specifically, plasma treatment in an Ar atmosphere and a mixture of Ar and hydrogen are used. Plasma treatment in a mixed gas atmosphere, plasma treatment in an ammonia atmosphere, and plasma treatment in an Ar and ammonia atmosphere. Plasma treatment in a mixed gas atmosphere of nitric acid or in a nitrogen atmosphere. Some examples include:

[0184] By the above plasma treatment, the oxide semiconductor film is formed into a lattice from which oxygen has been desorbed (or This creates oxygen vacancies in the area (the area separated from the surface). These oxygen vacancies may be a cause of carrier generation. In addition, in the vicinity of the oxide semiconductor film, more specifically, in the lower side or the upper side of the oxide semiconductor film, When hydrogen is supplied from the insulating film adjacent to the side, the oxygen vacancies are combined with the hydrogen, forming a carrier In some cases, electrons that are rearranged may be generated.

[0185] On the other hand, an oxide semiconductor film in which oxygen vacancies are filled and the hydrogen concentration is reduced is highly purified and intrinsic. Alternatively, it can be said that the oxide semiconductor film is substantially highly purified and intrinsic. The carrier density of the oxide semiconductor film is 8×10 11 pieces / cm 3 Less than 1 x 10 1 1 / cm 3 less than 1×10 10 pieces / cm 3 It means that the purity is less than 100%. A highly pure or substantially highly pure intrinsic oxide semiconductor film has a small carrier generation source. In addition, the carrier density can be reduced. Since an oxide semiconductor film has a low density of defect states, the density of trap states can be reduced. Cut.

[0186] In addition, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has a significantly low off-state current. Very small, with a channel width of 1×10 6 Even if the device has a channel length of 10 μm, When the voltage between the source electrode and the drain electrode (drain voltage) is in the range of 1V to 10V, The current is below the measurement limit of the semiconductor parameter analyzer, i.e., 1×10 -13 A and below Therefore, the above-mentioned high purity intrinsic or substantially high purity intrinsic A transistor using a semiconductor layer including an oxide semiconductor film, which is electrically conductive, for a channel region is This results in a highly reliable transistor with minimal fluctuation in characteristics.

[0187] As an insulating film which is in contact with the oxide semiconductor film used as the conductive layer, for example, an insulating film containing hydrogen In other words, an insulating film capable of releasing hydrogen, typically a silicon nitride film, is used. As an insulating film capable of releasing hydrogen, The hydrogen concentration in the film is 1×10 22 atoms / cm 3 It is preferable that the above is the case. By forming such an insulating film in contact with the conductive layer, hydrogen can be effectively contained in the conductive layer. In this way, by changing the configuration of the insulating film in contact with the semiconductor layer and the conductive layer, In this way, the resistivity of the oxide semiconductor film can be controlled.

[0188] Hydrogen contained in the oxide semiconductor film reacts with oxygen that is bonded to metal atoms to form water. In this case, oxygen vacancies are formed in the lattice from which oxygen has been desorbed (or in the portion from which oxygen has been desorbed). When hydrogen enters the electron carrier, it can generate electrons. When it bonds with oxygen, which bonds with a metal atom, it may generate electrons, which act as carriers. Therefore, the conductive layer provided in contact with the insulating film containing hydrogen has a higher hydrogen content than the semiconductor layer. An oxide semiconductor film with high carrier density is obtained.

[0189] The semiconductor layer in which the transistor channel region is formed has as little hydrogen as possible. Specifically, it is preferable that the semiconductor layer is The hydrogen concentration is 2×10 20 atoms / cm 3 Less than or equal to 5×10 19 atom s / cm 3 Less than or equal to 1×10 19 atoms / cm 3 Below, 5 x 10 18 a toms / cm 3 Less than 1 x 10 18 atoms / cm 3 The following is more preferable: is 5 x 10 17 atoms / cm 3 Less than 1×10, more preferably 16 atoms / c m 3 The following applies.

[0190] On the other hand, the conductive layer has a higher hydrogen concentration and / or oxygen vacancy amount and a lower resistivity than the semiconductor layer. The hydrogen concentration in the conductive layer is 8×10 19 atoms / cm 3 More than 1×10 20 atoms / cm 3 More preferably, 5×10 20 a toms / cm 3 The hydrogen concentration in the conductive layer is higher than that in the semiconductor layer. The resistivity of the conductive layer is at least 2 times, preferably at least 10 times, that of the semiconductor layer. 1×10 -8 more than 1x10 -1 It is preferable that the ratio is less than 1×10 -3 Ωcm or more 1×10 4 Ωcm, and more preferably a resistivity of 1×10 -3 Ωcm or more 1×10 -1It is preferable that the resistivity is less than Ωcm.

[0191] {insulating layer} Examples of insulating materials that can be used for each insulating layer, overcoat, spacer, etc. include For example, resins such as acrylic and epoxy, resins with siloxane bonds, silicon oxide, Inorganic insulation such as silicon oxynitride, silicon oxynitride, silicon nitride, and aluminum oxide Materials can also be used.

[0192] {adhesive layer} The adhesive layer is made of a hardening resin such as a thermosetting resin, a photocurable resin, or a two-liquid mixed hardening resin. For example, acrylic resin, urethane resin, epoxy resin, or silicone resin can be used. Resins having siloxane bonds, such as ricone, can be used.

[0193] {Connection Layer} The connection layer is made of anisotropic conductive film (ACF). conductive film) and anisotropic conductive paste (ACP) Conductive Paste) can be used.

[0194] {Colored layer} Materials that can be used for the coloring layer include metal materials, resin materials, pigments, and dyes. Examples of such materials include resin materials.

[0195] The above is a description of each component.

[0196] [Touch sensor configuration example] Next, a touch panel that can be applied to the touch panel module 10 according to one embodiment of the present invention will be described. An example of the configuration of the sensor 22 will be described with reference to the drawings.

[0197] FIG. 14(A) is a schematic top view (schematic plan view) showing a part of the touch sensor 22. FIG. 14(B) is an enlarged schematic top view of the area surrounded by the dashed line in FIG. 14(A). .

[0198] As shown in FIGS. 14A and 14B, the width of the conductive layer 23 at the intersection with the conductive layer 25 is small. It is preferable that the capacitor element 11 has a narrowed shape so that the capacitor element 11 is small. It is possible to reduce the capacitance value. For example, in the case of a self-capacitance touch sensor, The smaller the capacitance value of the capacitive element 11, the more the detection sensitivity can be improved.

[0199] In addition, a conductive layer electrically insulated from the adjacent conductive layers 23 and 24 is provided between the conductive layers 23 and 24. The conductive layer 26 may be included. By including the conductive layer 26, the thickness of the touch sensor 22 may be reduced. For example, the conductive layer 23 and the conductive layer 24 are formed on the same surface. When formed on a surface, these conductive layers are provided with a similarly formed conductive layer 26. This can improve the coverage of the thin film formed after the layer formation step and flatten the surface. In addition, the thickness of the touch sensor 22 is made uniform, so that the brightness of the light from the pixels passing through the touch sensor 22 is reduced. It is possible to realize a touch panel with reduced unevenness in display quality and improved display quality.

[0200] In FIG. 14C, the conductive layer 23 and the conductive layer 24 are formed on different planes. In this case, the conductive layer 26 is not provided. It may be formed on the same plane as either layer 24 or on a different plane. It should be noted that, if there is no need to provide the conductive layer 26, it does not have to be provided.

[0201] FIG. 15(A) is a top view schematic showing a part of a touch sensor having a different pattern from that in FIG. This is a schematic diagram.

[0202] In the example shown in FIG. 15A, at the intersection of the conductive layer 23 and the conductive layer 24, The width is greater than the width of the conductive layer 24 .

[0203] For example, the conductive layer 23 is arranged parallel to the long side of the display unit, and the conductive layer 24 is arranged parallel to the short side. 15, in order to prevent an increase in the resistance value of the conductive layer 23, It is particularly effective to make the width of the conductive layer 3 larger than that of the conductive layer 24.

[0204] FIG. 15(B) shows an example in which a conductive layer 25 is disposed to be electrically connected to the conductive layer 23. In the case where the conductive layer 25 is used as a bridge, the conductive layer 23 and the conductive layer 25 are Contact resistance may affect the detection sensitivity. Therefore, the conductive layer side with the bridge structure In this case, the conductive layer 23 is formed on the short side of the display area. The conductive layers may be arranged parallel to the direction.

[0205] FIG. 16(A) shows a circuit diagram of a touch sensor 22 having a plurality of conductive layers 23 and a plurality of conductive layers 24. FIG. 16A shows an example of a circuit diagram. For simplicity, six conductive layers 23 and six Although the configuration having the conductive layer 24 is shown, the number is not limited to this.

[0206] Between one conductive layer 23 and one conductive layer 24, one capacitance element 11 is formed. Therefore, the capacitive elements 11 are arranged in a matrix.

[0207] In the case of the projected self-capacitance method, a pulse voltage is scanned on each of the conductive layers 23 and 24. When the object to be detected approaches, the value of the current flowing through the sensor is detected. Since the magnitude of the current changes depending on the temperature, the position information of the object to be detected can be obtained by detecting this difference. In the case of the projected mutual capacitance method, the conductive layer 23 or the conductive layer 24 A pulse voltage is applied to one of the electrodes to scan, and the current flowing through the other electrode is detected. In this way, position information of the detected object is obtained.

[0208] The conductive layer 23 and the conductive layer 24 each have a lattice or mesh shape (mesh) having a plurality of openings. FIG. 16(B) shows a top view of a portion of the conductive layer 23. An example of the state is shown.

[0209] The conductive layer 23 shown in FIG. 16(B) is a lattice having a horizontal interval P1 and a vertical interval P2. FIG. 16B shows a case where the interval P1 and the interval P2 are approximately equal. However, they may be spaced at different intervals. For example, as shown in FIG. In this way, the vertical interval P2 may be made larger than the horizontal interval P1, or vice versa. The same applies to the conductive layer 24.

[0210] The conductive layer 23 or the conductive layer 24 has an aperture ratio (the aperture ratio of the conductive layer 23 or the conductive layer 24 per unit area). The ratio of the open area of ​​the layer 24) is, for example, 20% or more and less than 100%, preferably 30% or more and less than 100%. It is preferable that the ratio of the β-amino acid residues is less than 100%, and more preferably between 50% and 100%. .

[0211] The aperture ratio can be easily calculated from, for example, the interval P1, the interval P2, and the width of the conductive layer. Alternatively, in the periodic unit region R shown in FIG. 16(B), the area of ​​region R and the The aperture ratio can be calculated from the ratio of the area of ​​the conductive layer 23 included in the region. R is a region that is a periodic unit of the pattern of the periodic conductive layer 23, and this is divided vertically and horizontally. By arranging the conductive layer 23 periodically in the lateral direction, a pattern can be formed.

[0212] In the conductive layers 23 and 24, the width of the pattern constituting the lattice is set to, for example, 50 nm. 100 μm or more, preferably 1 μm or more and 50 μm or less, more preferably 1 μm or more and 2 It is preferable to make the pattern width of the grating smaller. This makes it possible to narrow the pixel spacing when the aperture and pixel overlap, as described below. Therefore, a touch panel with higher resolution and a higher aperture ratio can be realized.

[0213] FIG. 17A is a schematic top view showing an enlarged view of the boundary between the conductive layer 23 and the conductive layer 24. do.

[0214] The conductive layer 23 and the conductive layer 24 each have a lattice (also called a mesh) shape. That is, the conductive layer 23 and the conductive layer 24 each preferably have a plurality of It is preferable that the shape has openings (opening 23a and opening 24a). By providing the opening so that it overlaps with the pixel, light from a display element of the pixel can be reflected. The conductive layers 23 and 24 are light-shielding or the conductive layers 23 and 24 are transparent. As a result, the aperture ratio and light extraction efficiency of the pixel are not sacrificed. The touch sensor 22 can be applied to a touch panel without sacrificing the touch sensitivity. Moreover, it is preferable that the conductive layer 25 is also shaped so as not to overlap with the pixels.

[0215] As shown in FIG. 17A, at the boundary between these layers, a part of the conductive layer 23 and the conductive layer 2 4. In this configuration, the opening 22a is formed by being surrounded by a part of the By doing so, it is possible to minimize the distance between the conductive layer 23 and the conductive layer 24. In particular, when adopting the mutual capacitance method, two It is preferable to reduce the distance between the conductive layers to increase the capacitance between them.

[0216] FIG. 17B is an enlarged schematic top view of the intersection of the conductive layer 23 and the conductive layer 24. 2 shows an example in which two adjacent conductive layers 24 are electrically connected by a conductive layer 25. An insulating layer 121 (not shown) is provided between the conductive layer 23 and the conductive layer 24 and the conductive layer 25. The conductive layer 24 and the conductive layer 25 are connected to each other through an opening provided in the insulating layer 121. The conductive layer 23 and the conductive layer 25 are electrically connected to each other via the insulating layer 121. They have overlapping areas.

[0217] FIG. 18(A) is a diagram showing a conductive layer 27 superimposed on FIG. 17(B). ) is a diagram showing the conductive layer 27 and the conductive layer 25 at this time by dashed lines.

[0218] In this manner, an opening (also called a cutout) is provided in the conductive layer 27. In this way, the conductive layer 25 can be located at the portion where the conductive layer 27 and The conductive layer 25 can be formed by processing the same conductive film.

[0219] In addition, when the conductive layer 27 and the conductive layer 25 are formed by processing different conductive films, 27 and the conductive layer 25 may overlap.

[0220] FIG. 19(A) shows an example of a pattern different from those shown in FIGS. 17 and 18. Here, the conductive layer 23 and the conductive layer 24. The conductive layer 24 is connected to the conductive layer 25. In FIG. 19B, the conductive layer 25 and the conductive layer 27 are shown by dashed lines. This is a diagram.

[0221] In FIG. 19, a plurality of stripe-shaped conductive layers 27 are provided along the extending direction of the conductive layer 24. The conductive layers 27 are formed on the outer periphery of the display unit (for example, the area overlapping the circuit 34). It is preferable that the electrodes are electrically connected to each other via a connection such as a junction box (not shown) so that the same potential can be supplied to each electrode. The conductive layer 27 has a large width at the portion overlapping the display element and a small width at the portion overlapping the conductive layer 23. In order to reduce the overlapping area between the conductive layer 27 and the conductive layer 23, This makes it possible to reduce the parasitic capacitance of the conductive layer 23.

[0222] [Example of conductive layer openings and pixel arrangement] Each diagram in FIG. 20 shows a pixel and a sub-pixel included in the pixel as viewed from the display surface side, and a conductive layer 2 3. Here, the conductive layer 23 is taken as an example for explanation. The conductive layer 24 and the conductive layer 25 may have a similar structure.

[0223] In FIG. 20A, the pixel 33 has three subpixels, 33R, 33G, and 33B. For example, the subpixel 33R displays red, and the subpixel The sub-pixel 33G has a function of displaying green, and the sub-pixel 33B has a function of displaying blue. However, the number of sub-pixels included in the pixel 33 and the types of colors of the sub-pixels are not limited to these.

[0224] Each of the sub-pixels included in the pixel 33 includes a display element. The above-mentioned liquid crystal element can be used. In addition, light-emitting elements such as organic EL elements can also be used. element, transmissive, semi-transmissive or reflective liquid crystal element, electrophoretic or electronic liquid powder (registered trademark ) display element (also called electronic ink), shutter-type MEMs Examples of such display elements include the S display element and the MEMS display element using the optical interference method. In addition to the elements, the device has transistors, capacitors, and wiring that electrically connects them. It's fine.

[0225] In the configuration shown in FIG. 20A, each of the multiple openings in the conductive layer 23 corresponds to a sub-pixel 33R, The subpixel 33G and the subpixel 33B are arranged so as to overlap with each other. In this manner, the opening of the conductive layer 23 is arranged so as to overlap one sub-pixel. It is preferred.

[0226] In FIG. 20B, a conductive layer 23 is disposed between two adjacent sub-pixels exhibiting different colors. As shown in FIG. 20(B), two adjacent sub-pixels that exhibit the same color are Since there is no problem of color mixing between the elements, the conductive layer 23 is not provided in the area. It may be configured as follows.

[0227] In FIGS. 20C and 20D, the pixel 33 is further enlarged as compared to the configuration shown in FIGS. 20A and 20B. In addition, the sub-pixel 33Y is also included. The sub-pixel 33Y displays, for example, yellow. In addition, a pixel that can display white can be applied instead of the sub-pixel 33Y. In this way, it is possible to apply a pixel that can display more than three colors. By providing the pixel 33 with this, power consumption can be reduced.

[0228] In the examples shown in FIGS. 20(A) to 20(D), the sub-pixels are arranged in stripes. For example, as shown in FIG. 20(E), a configuration in which two color sub-pixels are arranged alternately in one direction is used. Good too.

[0229] The size of the sub-pixels of the pixel 33 (for example, the area of ​​the area that contributes to display) is For example, the subpixels that show blue, which has a relatively low visibility, may be made larger, or It is also possible to make the sub-pixels showing green or red, which have a relatively high luminosity, smaller.

[0230] In FIG. 20(F) and (G), among the subpixels 33R, 33G, and 33B, This shows an example in which the size of pixel 33B is made larger than the other sub-pixels. An example in which the pixels 33R and the sub-pixels 33G are arranged alternately is shown in FIG. The three sub-pixels are arranged in stripes, with each sub-pixel being a different size. It can also be written as:

[0231] As described above, the positional relationship between the conductive layer 23 and the sub-pixels has been described. The same applies to the conductive layer 24 and the conductive layer 25. The opening 23a of the conductive layer 23 and one or more sub-pixels overlap each other, and The conductive layer 24 has an opening 24a and one or more other sub-pixels overlapping each other. As described above, each sub-pixel has a display element, and therefore the openings 23a and 24a are It can also be said that the display element has an overlapping region with one or more display elements.

[0232] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0233] (Embodiment 2) In this embodiment, an example of a method for driving an input device or an input / output device according to one embodiment of the present invention will be described. The following description will be given with reference to the drawings.

[0234] [Example of sensor detection method] FIG. 21A is a block diagram showing the configuration of a mutual capacitance type touch sensor. In (A), a pulse voltage output circuit 601 and a current detection circuit 602 are shown. In (A), an electrode 621 to which a pulse voltage is applied and an electrode 622 to which a change in current is detected are arranged. Each of these is shown as six wires, X1-X6 and Y1-Y6. A) illustrates a capacitance 603 formed by overlapping an electrode 621 and an electrode 622. The functions of the electrodes 621 and 622 may be interchangeable.

[0235] The pulse voltage output circuit 601 is a circuit for applying a pulse voltage to the wirings X1-X6 in sequence. When a pulse voltage is applied to the wiring of X1-X6, a current that forms a capacitance 603 An electric field is generated between the electrodes 621 and 622. The electric field generated between these electrodes is capacitively shielded. By using a change in the capacitance of 603, the approach or contact of a detection object is detected. It is possible.

[0236] The current detection circuit 602 detects the current in the wiring Y1-Y6 due to a change in capacitance in the capacitor 603. This is a circuit to detect changes in the temperature. The wiring of Y1-Y6 is If there is no touch, the detected current value will not change, but if the object to be detected approaches or touches it, When the capacitance decreases, the change in the current value is detected. This can be done using a road or the like.

[0237] Next, FIG. 21B shows the input of the mutual capacitance type touch sensor shown in FIG. The timing chart of the output waveform is shown in FIG. 21(B). In FIG. 21(B), the case where the object is not detected ( Two cases are shown: when the sensor detects a target object (touch) and when the sensor detects a target object (non-touch). For the wiring Y1-Y6, the waveform is shown as a voltage value corresponding to the detected current value. There are.

[0238] A pulse voltage is applied to the wires X1-X6 in sequence, and the The waveform in the Y6 wiring changes. When there is no approach or contact of the object to be detected, X1-X6 The waveforms of Y1-Y6 change uniformly according to the change in the voltage of the wiring. Or, at the point of contact, the current value decreases, and the corresponding voltage waveform also changes. do.

[0239] In this way, the approach or contact of a detection object is detected by detecting the change in capacitance. It is possible.

[0240] The pulse voltage output circuit 601 and the current detection circuit 602 are integrated in the form of an IC. It is preferable that the touch panel be mounted in a touch panel state or on a substrate inside the housing of an electronic device. In addition, when making a flexible touch panel, parasitic capacitance increases at the bent portion. Therefore, it is recommended to use a drive that is less susceptible to noise. It is preferable to use ICs that have been applied with a dynamic method. For example, the signal-to-noise ratio (S / N ratio) It is preferable to use an IC that employs a driving method that enhances the

[0241] In FIG. 21A, only a capacitor 603 is provided at the intersection of the wiring as a touch sensor. The configuration of a passive matrix touch sensor has been shown, but An active matrix touch sensor may be used. 2 shows an example of one sensor circuit included in a touch sensor.

[0242] The sensor circuit includes a capacitor 603, a transistor 611, a transistor 612, and a transistor The transistor 613 has a gate to which a signal G2 is applied, and a source or A voltage VRES is applied to one of the drains, and the other is connected to one electrode of the capacitor 603 and the transistor. The transistor 611 is electrically connected to the gate of the transistor 611. One is electrically connected to one of the source and drain of the transistor 612, and the other is connected to a voltage V A signal G1 is applied to the gate of the transistor 612, and a signal G2 is applied to the source or drain of the transistor 612. The other electrode of the capacitor 603 is electrically connected to the wiring ML. can be obtained.

[0243] Next, the operation of the sensor circuit will be described. First, the transistor 613 is turned on as the signal G2. When a potential is applied to turn on the transistor 611, the gate of the transistor 611 is connected to the node A potential corresponding to the voltage VRES is applied to node n. By applying a potential that turns off the node 613, the potential of the node n is maintained.

[0244] Next, the capacitance of the capacitor 603 changes when a detection object such as a finger approaches or touches the sensor. Accordingly, the potential of the node n changes from VRES.

[0245] The read operation applies a potential to the signal G1 to turn on the transistor 612. The current flowing through the transistor 611 in response to the potential of the node n, that is, the current flowing through the wiring ML, is By detecting this current, it is possible to detect the approach or contact of an object to be detected. can.

[0246] The transistors 611, 612, and 613 have channels each having a It is preferable to use a transistor in which an oxide semiconductor is used for a semiconductor layer to be formed. By applying such a transistor to the transistor 613, the potential of the node n This makes it possible to hold VRES for a long period of time, and the operation of resupplying VRES to node n ( This can reduce the frequency of the refresh operation.

[0247] [Example of in-cell touch panel configuration] In the above, the electrodes constituting the touch sensor are provided on a substrate different from the substrate on which the display element and the like are provided. Although the case where the touch sensor is formed on a plate has been shown, the touch sensor may be formed on a substrate on which a display element or the like is provided. Alternatively, one or both of a pair of electrodes may be provided.

[0248] The following describes the configuration of a touch panel in which a touch sensor is incorporated in a display unit having multiple pixels. Here, a liquid crystal element is used as a display element provided in a pixel. Here is an example.

[0249] FIG. 23A shows one of the pixel circuits provided in the display unit of the touch panel exemplified in this configuration example. FIG. 1 is an equivalent circuit diagram of a portion

[0250] One pixel has at least a transistor 3503 and a liquid crystal element 3504. A wiring 3501 is connected to the gate of the transistor 3503, and a wiring 3502 is connected to either the source or drain. 02 are electrically connected to each other.

[0251] The pixel circuit includes a plurality of wirings extending in the X direction (for example, wiring 3510_1, wiring 3510_2, _2) and a plurality of wirings (for example, wiring 3511) extending in the Y direction, which are mutually The electrodes are disposed so as to intersect with each other, and a capacitance is formed therebetween.

[0252] In addition, among the pixels provided in the pixel circuit, some of the adjacent pixels are The electrodes of the liquid crystal elements are electrically connected to each other to form one block. The lock is divided into island blocks (e.g., block 3515_1, block 3515_2) and , a linear block extending in the Y direction (e.g., block 3516) In addition, although FIG. 23 shows only a part of the pixel circuit, these two types of The blocks are arranged repeatedly in the X and Y directions.

[0253] The wiring 3510_1 (or 3510_2) extending in the X direction is arranged in an island-shaped block 351 5_1 (or block 3515_2). The wiring 3510_1 extending in the X direction is discontinuous along the X direction via a line-shaped block. The island-shaped blocks 3515_1 arranged in the Y direction are electrically connected to each other. The existing wiring 3511 is electrically connected to the line-shaped block 3516 .

[0254] FIG. 23B shows a plurality of wirings 3510 extending in the X direction and a plurality of wirings 3510 extending in the Y direction. FIG. 3 is an equivalent circuit diagram showing a connection configuration of the wiring 3511. An input voltage or a common potential can be input to the wiring 3 extending in the Y direction. A ground potential is input to each of the wirings 3511, or the wiring 3511 is electrically connected to the detection circuit. It is possible.

[0255] Hereinafter, the operation of the above-mentioned touch panel will be described with reference to FIGS.

[0256] Here, one frame period is divided into a writing period and a detection period. This is the period in which image data is written to the wiring 3501 (gate On the other hand, during the detection period, the touch sensor sequentially selects the touch lines (also called the touch line or the scan line). In this period, the wiring 3510 extending in the X direction is selected in sequence, and the input voltage Pressure is input.

[0257] FIG. 24A is an equivalent circuit diagram during the writing period. A common potential is input to both the wiring 3510 extending in the Y direction and the wiring 3511 extending in the Y direction. can be.

[0258] FIG. 24(B) is an equivalent circuit diagram at a certain point in the detection period. Each of the wirings 3511 extending in the X direction is electrically connected to a detection circuit. Of the wiring 3510, the input voltage is input to the selected one, and the other A common potential is input.

[0259] The driving method exemplified here can be used not only for the in-cell method but also for the touch panel exemplified above. This can also be applied to the LC-1000 and can be used in combination with the driving method shown above. Cut.

[0260] In this way, the image writing period and the period for sensing by the touch sensor are separated. This prevents touch noise caused by pixel writing noise. The decrease in sensitivity of the sensor can be suppressed.

[0261] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0262] (Embodiment 3) In this embodiment, a display module including a display device or a display system according to one embodiment of the present invention will be described. The module and electronic device will be described with reference to FIG. 25 and FIG. 26.

[0263] The display module 8000 shown in FIG. 25 includes an upper cover 8001 and a lower cover 8002. Between them, the touch panel 8004 connected to the FPC 8003, the frame 8009, and the printer The device has a substrate 8010 and a battery 8011.

[0264] The touch panel module of one embodiment of the present invention is used for the touch panel 8004, for example. It is possible.

[0265] The upper cover 8001 and the lower cover 8002 are designed to fit the size of the touch panel 8004. The shape and dimensions can be changed appropriately.

[0266] The touch panel 8004 is a resistive or capacitive touch panel. In addition, the opposing substrate (sealing substrate) of the touch panel 8004 can be used by overlapping it with the It is also possible to provide a touch panel function. It is also possible to provide an optical sensor in each pixel of the display 4 to make it into an optical touch panel.

[0267] In addition, when a transmissive liquid crystal element is used, as shown in FIG. The backlight 8007 includes a light source 8008. In the above example, the light source 8008 is disposed above the backlight 8007. For example, a light source 8008 is disposed at the end of the backlight 8007, and a light diffusion layer is disposed on the light source 8008. A diffuser plate may be used. When a self-luminous light-emitting element such as an organic EL element is used, In the case of a reflective panel, the backlight 8007 is not provided. This is also fine.

[0268] The frame 8009 protects the display panel 8006 and also supports the movement of the printed circuit board 8010. It also functions as an electromagnetic shield to block electromagnetic waves generated by frame operations. The frame 8009 may also function as a heat sink.

[0269] The printed circuit board 8010 includes a power supply circuit, a signal circuit for outputting a video signal, and a clock signal. The power supply circuit is provided with a signal processing circuit. Alternatively, the power source may be a battery 8011 provided separately. , this can be omitted when using a commercial power source.

[0270] In addition, the touch panel 8004 includes additional components such as a polarizing plate, a retardation plate, and a prism sheet. It may also be provided as such.

[0271] 26(A) to 26(H) are diagrams showing electronic devices. These electronic devices are A body 5000, a display unit 5001, a speaker 5003, an LED lamp 5004, and an operation key 50 05 (including a power switch or an operation switch), a connection terminal 5006, a sensor 5007 ( Force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances , sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, 5008, etc.) can.

[0272] FIG. 26(A) shows a mobile computer, which includes, in addition to the above, a switch 5009 , an infrared port 5010, etc. FIG. 26(B) shows a mobile phone equipped with a recording medium. A portable image reproducing device (e.g., a DVD reproducing device) and, in addition to the above, the following devices are also included: The display unit 5002, the recording medium reading unit 5011, etc. In addition to the above, the display includes a second display unit 5002 and a support unit 5012. , earphones 5013, etc. FIG. 26(D) shows a portable game machine. In addition to the above, a recording medium reading unit 5011, etc. can be included. FIG. 26(E) shows This is a digital camera with a television receiving function, and in addition to the above, it also has an antenna 5014, The mobile phone may have a shutter button 5015, an image capturing unit 5016, etc. This is a slot machine, and in addition to the above, it has a second display unit 5002, a recording medium reading unit 5011, , etc. FIG. 26(G) shows a portable television receiver, In addition to the above, a charger 5017 capable of transmitting and receiving signals may be provided. ) is a wristwatch-type information terminal, and in addition to the above, it includes a band 5018, a clasp 5019, The display unit 500 is mounted on a housing 5000 that also serves as a bezel. The display unit 5001 has a non-rectangular display area. The display unit 5001 displays an icon 502 representing the time. 0, other icons 5021, etc. can be displayed.

[0273] The electronic devices shown in FIGS. 26(A) to 26(H) can have various functions. For example, the function to display various information (still images, videos, text images, etc.) on the display, Panel function, calendar, date or time display function, various software (platform A function to control processing by a program, a wireless communication function, and a function to control various Functions for connecting to computer networks, wireless communication functions for transmitting various data, The function of receiving, reading out the program or data recorded on the recording medium and displaying it on the display Furthermore, in an electronic device having multiple display units, In this case, one display section is used mainly to display image information, and the other display section is used mainly to display text information. A function to display images with parallax taken into account on multiple displays to create a stereoscopic effect. The electronic device may have a function of displaying an image. These include functions for taking still images, taking videos, and automatically or manually correcting the images. The camera has a function to correct the captured image, a function to save the captured image on a recording medium (external or built-in to the camera), The image displayed on the display unit can have a function of displaying the image. The functions that the electronic device shown in 6(H) can have are not limited to these, and various functions may be included. It is possible to have.

[0274] The electronic device described in this embodiment has a display unit for displaying some information. The display device described in the above embodiment mode can be used for the display portion. Cut.

[0275] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination. [Explanation of symbols]

[0276] 10 Touch Panel Module 11 Capacitive element 21 Substrate 22 Touch Sensor 22a opening 23a opening 24a aperture 23 Conductive layer 24 Conductive layer 25 Conductive Layer 26 Conductive Layer 27 Conductive Layer 29 Wiring 31 Substrate 32 Display section 33 pixels 33B subpixel 33G subpixel 33R subpixel 33Y subpixel 34 Circuit 35 Wiring 41 FPC 42 FPC 60 Display element 101 Connection 115 Light blocking layer 121 Insulating layer 122 Insulating layer 123 Insulating Layer 124 Spacer 126 Insulating Layer 127 Insulating Layer 131B Colored layer 131R colored layer 141 Adhesive layer 151 Conductive layer 152 Liquid crystal 153 Conductive Layer 201 Transistor 202 Transistor 203 Capacitive element 204 Connection 211 Insulating layer 212 Insulating layer 213 Insulating Layer 214 Insulating layer 215 Insulating Layer 221 Conductive Layer 222 Conductive Layer 223 Conductive Layer 231 Semiconductor Layer 241 Connection Layer 242 Connection Layer 300 Buffer Layer 301 Transistor 302 Transistor 601 Pulse voltage output circuit 602 Current Detection Circuit 603 capacity 611 Transistor 612 Transistor 613 Transistor 621 Electrode 622 Electrode 3501 Wiring 3502 Wiring 3503 Transistor 3504 Liquid crystal elements 3510 Wiring 3510_1 Wiring 3510_2 Wiring 3511 Wiring 3515_1 Block 3515_2 Block 3516 Block 5000 cabinet 5001 Display section 5002 Display section 5003 Speaker 5004 LED Lamp 5005 Operation key 5006 Connection terminal 5007 Sensor 5008 Microphone 5009 Switch 5010 Infrared port 5011 Recording medium reading unit 5012 Support part 5013 Earphones 5014 Antenna 5015 Shutter button 5016 Imaging unit 5017 charger 5018 Band 5019 Clasp 5020 Icon 5021 Icon 8000 Display Module 8001 Top cover 8002 Lower cover 8003 FPC 8004 Touch Panel 8006 Display Panel 8007 Backlight 8008 light source 8009 Frame 8010 Printed Circuit Board 8011 Battery

Claims

1. a first substrate, a first conductive layer, a second conductive layer, a third conductive layer, a fourth conductive layer, a fifth conductive layer, an insulating layer, and a liquid crystal display element; the first conductive layer, the second conductive layer, and the third conductive layer are provided on the same plane and spaced apart from each other; the second conductive layer is located between the first conductive layer and the third conductive layer in a plan view; the first conductive layer and the fourth conductive layer are electrically connected; the third conductive layer and the fourth conductive layer are electrically connected; the second conductive layer and the fourth conductive layer have an overlapping portion with the insulating layer interposed therebetween, the first conductive layer has a mesh shape having a plurality of openings; the opening, the liquid crystal display element, and the fifth conductive layer have overlapping regions; the fifth conductive layer is located between the first conductive layer and the liquid crystal display element; the fifth conductive layer has a function of transmitting visible light; a transistor electrically connected to the liquid crystal display element is provided; The transistor has a semiconductor layer, the semiconductor layer and the fifth conductive layer contain an oxide containing the same metal element, the transistor has a first gate electrode and a second gate electrode; the semiconductor layer is located between the first gate electrode and the second gate electrode; one of the first gate electrode and the second gate electrode includes an oxide containing the metal element.

2. In claim 1, A touch panel is provided, The touch panel comprises the first conductive layer, the second conductive layer, the third conductive layer, the fourth conductive layer, the fifth conductive layer, and the insulating layer.

Images