High frequency component and manufacturing method of the same

Abstract

To provide a high frequency component having an improved breakdown voltage characteristic.SOLUTION: A high frequency component 10 comprises a capacitor 15. The capacitor includes: a first surface first conductive layer 311; a first surface first insulation layer 312 that is positioned onto the first surface first conductive layer; and a first surface second conductive layer 321 that is positioned onto the first surface first insulation layer. The first surface first insulation layer contains an inorganic material having an insulation damage electric field that is at least 6 MV / cm or more, and is more preferably 8 MV / cm or more. As an inorganic material of the first surface first insulation layer 312, silicon nitride such as SiN can be used.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] An embodiment of the present disclosure relates to a high-frequency component including a capacitor and a method for manufacturing the same. [Background technology]

[0002] In recent years, as integrated circuits such as semiconductor memories become faster and more highly integrated, passive components used around the integrated circuits are also required to be smaller and have a wider bandwidth. For example, when a capacitor is used as a bypass capacitor to suppress fluctuations in the power supply voltage, the capacitor is required to have a wider bandwidth in order to remove high-frequency noise superimposed on the power supply voltage. For example, Patent Document 1 proposes a thin-film capacitor including a first conductive layer, a high-dielectric thin film provided on the first conductive layer, and a second conductive layer provided on the high-dielectric thin film. In the thin-film capacitor, a small-sized capacitor with a large capacity can be realized by using a high-dielectric thin film having a high dielectric constant. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 6-89831 Summary of the Invention [Problem to be solved by the invention]

[0004] Conventional thin-film capacitors are mainly formed on silicon, as in the case of semiconductor processes. Silicon has a certain electrical conductivity, so it is not easy to increase the withstand voltage of conventional thin-film capacitors.

[0005] The embodiments of the present disclosure have been made in consideration of the above points, and an object of the present disclosure is to provide a high-frequency component having improved voltage resistance characteristics. [Means for solving the problem]

[0006] One embodiment of the present disclosure includes a first surface first conductive layer, a first surface first insulating layer located on the first surface first conductive layer, a first surface second conductive layer located on the first surface first insulating layer, and a first surface second insulating layer located on the first surface first insulating layer and on the first surface second conductive layer, wherein the first surface first insulating layer overlapping the first surface second conductive layer constitutes a capacitor together with the first surface first conductive layer and the first surface second conductive layer, and the first surface first insulating layer has a dielectric breakdown field of 6 MV / cm or more. the first-surface first insulating layer includes an inorganic material having an organic layer formed thereon, the first-surface second insulating layer being located on a portion of the first-surface first insulating layer that does not overlap the first-surface second conductive layer, the first-surface second insulating layer including an organic material, the first-surface first insulating layer including a first portion located on a top surface of the first-surface first conductive layer and a second portion connected to the first portion and located on a side surface of the first-surface first conductive layer, and a thickness of the second portion is smaller than a thickness of the first portion and is equal to or greater than ¼ of the thickness of the first portion.

[0007] One embodiment of the present disclosure includes a first surface first conductive layer, a first surface first insulating layer located on the first surface first conductive layer, a first surface second conductive layer located on the first surface first insulating layer, and a first surface second insulating layer located on the first surface first insulating layer and on the first surface second conductive layer, wherein the first surface first insulating layer overlapping the first surface second conductive layer constitutes a capacitor together with the first surface first conductive layer and the first surface second conductive layer, the first surface first insulating layer includes an inorganic material having a dielectric breakdown field of 6 MV / cm or more, the first surface second insulating layer is located on the first surface first insulating layer not overlapping the first surface second conductive layer, and the first surface second insulating layer includes an organic material, and the first surface first insulating layer includes a first portion located on an upper surface of the first surface first conductive layer and a second portion connected to the first portion and located on a side surface of the first surface first conductive layer, This is a high-frequency component, wherein a side surface of the first surface first conductive layer includes an inclined portion having a shape that displaces inward as it moves away from the top surface in the thickness direction, and the inclined portion is at least partially exposed from the first surface first insulating layer.

[0008] In the high-frequency device according to one embodiment of the present disclosure, the leakage current of the inorganic material of the first insulating layer on the first surface is preferably 1×10 -12 A or below.

[0009] In the high-frequency device according to one embodiment of the present disclosure, the inorganic material of the first insulating layer on the first surface may include silicon nitride.

[0010] In the high-frequency device according to one embodiment of the present disclosure, the first-surface first insulating layer may have a thickness of 50 nm or more and 400 nm or less.

[0011] In the high-frequency device according to one embodiment of the present disclosure, the first-surface first conductive layer may have a thickness of not less than 5 μm and not more than 20 μm.

[0012] A high-frequency component according to an embodiment of the present disclosure may include a first-side second insulating layer located on the first-side first insulating layer and the first-side second conductive layer. The first-side second insulating layer may be located on the first-side first insulating layer at a portion not overlapping the first-side second conductive layer, and the first-side second insulating layer may include an organic material. The organic material of the first-side second insulating layer may have a dielectric loss tangent of 0.003 or less.

[0013] One embodiment of the present disclosure is a method for manufacturing a high-frequency component, comprising the steps of: forming a first-surface first conductive layer; forming a first-surface first insulating layer on the first-surface first conductive layer, the first-surface first insulating layer including an inorganic material having a breakdown field of 6 MV / cm or more; forming a first-surface second conductive layer on the first-surface first insulating layer; and forming a first-surface second insulating layer on the first-surface first insulating layer and on the first-surface second conductive layer, wherein the first-surface first conductive layer, the first-surface first insulating layer, and the first-surface second conductive layer constitute a capacitor, the first-surface second insulating layer is located on the first-surface first insulating layer at a position not overlapping the first-surface second conductive layer, the first-surface second insulating layer includes an organic material, the first-surface first insulating layer includes a first portion located on an upper surface of the first-surface first conductive layer and a second portion connected to the first portion and located on a side surface of the first-surface first conductive layer, and a thickness of the second portion is smaller than a thickness of the first portion and is equal to or greater than ¼ of the thickness of the first portion.

[0014] One embodiment of the present disclosure includes a step of forming a first-side first conductive layer, a step of forming a first-side first insulating layer containing an inorganic material having a dielectric breakdown field of 6 MV / cm or more on the first-side first conductive layer, a step of forming a first-side second conductive layer on the first-side first insulating layer, and a step of forming a first-side second insulating layer on the first-side first insulating layer and on the first-side second conductive layer, wherein the first-side first conductive layer, the first-side first insulating layer, and the first-side second conductive layer constitute a capacitor, and the first-side second insulating layer is a first portion located on the top surface of the first-surface first insulating layer and not overlapping a first insulating layer, the first-surface second insulating layer including an organic material, the first-surface first insulating layer including a first portion located on the top surface of the first-surface first conductive layer and a second portion connected to the first portion and located on a side surface of the first-surface first conductive layer, the side surface of the first-surface first conductive layer including an inclined portion having a shape that displaces inward as it moves away from the top surface in a thickness direction, and the inclined portion is at least partially exposed from the first-surface first insulating layer.

[0015] In the method for producing a high-frequency component according to an embodiment of the present disclosure, the leakage current of the inorganic material of the first insulating layer on the first surface is preferably 1×10-12 A or below.

[0016] In the method for manufacturing a high-frequency component according to one embodiment of the present disclosure, the inorganic material of the first-surface first insulating layer may include silicon nitride.

[0017] In the method for manufacturing a high-frequency component according to one embodiment of the present disclosure, the first-surface first insulating layer may have a thickness of 50 nm or more and 400 nm or less.

[0018] In the method for manufacturing a high-frequency component according to one embodiment of the present disclosure, the first-surface first conductive layer may have a thickness of not less than 5 μm and not more than 20 μm.

[0019] The method for manufacturing a high-frequency component according to an embodiment of the present disclosure may further include a surface treatment step of exposing a surface of the first-surface first conductive layer to NH3 plasma prior to the step of forming the first-surface first insulating layer.

[0020] A method for manufacturing a high-frequency component according to an embodiment of the present disclosure may include forming a first-side second insulating layer on the first-side first insulating layer and the first-side second conductive layer. The first-side second insulating layer may be located on the first-side first insulating layer at a portion not overlapping the first-side second conductive layer, and the first-side second insulating layer may include an organic material. The organic material of the first-side second insulating layer may have a dielectric loss tangent of 0.003 or less. Effect of the Invention

[0021] According to the embodiments of the present disclosure, it is possible to provide a high-frequency component having improved voltage resistance characteristics. [Brief description of the drawings]

[0022] [Figure 1] 1 is a cross-sectional view showing a high-frequency component according to an embodiment of the present invention. [Diagram 2] 2 is an enlarged cross-sectional view of the high-frequency device of FIG. 1. [Diagram 3] FIG. 2 is a plan view showing the high-frequency component. [Figure 4] 1A to 1C are diagrams illustrating a manufacturing process for high-frequency components. [Diagram 5] 1A to 1C are diagrams illustrating a manufacturing process for high-frequency components. [Figure 6] 1A to 1C are diagrams illustrating a manufacturing process for high-frequency components. [Figure 7] 1A to 1C are diagrams illustrating a manufacturing process for high-frequency components. [Figure 8] 1A to 1C are diagrams illustrating a manufacturing process for high-frequency components. [Figure 9] 1A to 1C are diagrams illustrating a manufacturing process for high-frequency components. [Figure 10] 1A to 1C are diagrams illustrating a manufacturing process for high-frequency components. [Figure 11] 1A to 1C are diagrams illustrating a manufacturing process for high-frequency components. [Figure 12] 1A to 1C are diagrams illustrating a manufacturing process for high-frequency components. [Figure 13] 1A to 1C are diagrams illustrating a manufacturing process for high-frequency components. [Figure 14] 1A to 1C are diagrams illustrating a manufacturing process for high-frequency components. [Figure 15] 1A to 1C are diagrams illustrating a manufacturing process for high-frequency components. [Figure 16] FIG. 11 is a cross-sectional view showing a high-frequency device according to a modified example. [Figure 17] 13 is an enlarged plan view showing a capacitor of a high-frequency device according to a second modified example. FIG. [Figure 18] 18 is a cross-sectional view of the capacitor of FIG. 17 taken along line BB. [Figure 19] 10A to 10C are diagrams illustrating a manufacturing process for a high-frequency device according to a second modified example. [Figure 20] 10A to 10C are diagrams illustrating a manufacturing process for a high-frequency device according to a second modified example. [Figure 21] 10A to 10C are diagrams illustrating a manufacturing process for a high-frequency device according to a second modified example. [Figure 22] 10A to 10C are diagrams illustrating a manufacturing process for a high-frequency device according to a second modified example. [Figure 23] FIG. 11 is a cross-sectional view showing an application example of a capacitor of a high-frequency device according to a second modified example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0023] Hereinafter, the configuration of the high-frequency component according to the embodiment of the present disclosure and the manufacturing method thereof will be described in detail with reference to the drawings. Note that the embodiment shown below is an example of the embodiment of the present disclosure, and the present disclosure is not interpreted as being limited to these embodiments. In addition, in this specification, terms such as "substrate", "base material", "sheet" and "film" are not distinguished from each other based only on the difference in name. For example, "substrate" and "base material" are concepts that include members that can be called sheets and films. Furthermore, terms such as "parallel" and "orthogonal" and values ​​of length and angle that specify the shape and geometric conditions and their degree used in this specification are interpreted to include the range in which similar functions can be expected without being bound by strict meaning. In addition, in the drawings referred to in this embodiment, the same parts or parts having similar functions are given the same or similar symbols, and repeated explanations thereof may be omitted. In addition, the dimensional ratios of the drawings may differ from the actual ratios for convenience of explanation, and part of the configuration may be omitted from the drawings.

[0024] High-frequency components Hereinafter, an embodiment of the present disclosure will be described. First, a configuration of a high-frequency component 10 according to the present embodiment will be described with reference to Figs. 1 to 3. Fig. 1 is a cross-sectional view showing the high-frequency component 10. Fig. 2 is an enlarged cross-sectional view showing the high-frequency component 10 of Fig. 1. Fig. 3 is a plan view showing the high-frequency component 10. Fig. 1 corresponds to a cross-sectional view of the high-frequency component 10 shown in Fig. 3 cut along line AA. Note that a high-frequency component refers to an electronic component that can be used for high-frequency signals of 0.1 GHz or higher.

[0025] The high-frequency component 10 includes a substrate 12, a capacitor 15, and an inductor 16. The capacitor 15 is formed from a part of a first wiring structure 30. The inductor 16 is formed from a part of the first wiring structure 30, a through electrode 22, and a part of a second wiring structure 40. Each of the components of the high-frequency component 10 will be described below.

[0026] (substrate) The substrate 12 includes a first surface 13 and a second surface 14 located on the opposite side to the first surface 13. The substrate 12 also has a plurality of through holes 20 extending from the first surface 13 to the second surface 14.

[0027] The substrate 12 includes glass. An example of the glass used in the substrate 12 includes alkali-free glass. The alkali-free glass is glass that does not include an alkali component such as sodium or potassium. The alkali-free glass includes, for example, boric acid instead of an alkali component. The alkali-free glass includes, for example, an alkaline earth metal oxide such as calcium oxide or barium oxide. Examples of the alkali-free glass include EN-A1 manufactured by Asahi Glass Co., Ltd. and Eagle XG manufactured by Corning Co., Ltd. The thickness of the substrate 12 is, for example, 0.25 mm or more and 0.45 mm or less. By including glass in the substrate 12, the insulating property of the substrate 12 can be increased compared to the case where the substrate 12 is made of silicon, and thus the withstand voltage characteristic of the capacitor 15 located on the substrate 12 can be improved.

[0028] 1, the sidewall 21 of the through hole 20 may extend along the normal direction of the first surface 13 of the substrate 12. Alternatively, although not shown, the sidewall 21 may extend in a direction deviated from the normal direction of the first surface 13 of the substrate 12, or a portion of the sidewall 21 may be curved.

[0029] The length of through hole 20, i.e., the dimension of through hole 20 in the normal direction to first surface 13, is equal to the thickness of substrate 12. The width of through hole 20, i.e., the dimension S of through hole 20 in the planar direction of first surface 13 (see FIG. 4), is, for example, 40 μm or more and 150 μm or less. In addition, the ratio of the length to the width of through hole 20, i.e., the aspect ratio of through hole 20, is, for example, 4 or more and 10 or less.

[0030] (Through electrode) The through electrode 22 is a conductive member that is at least partially located inside the through hole 20. In the present embodiment, the thickness of the through electrode 22 is smaller than the width of the through hole 20, and therefore, there is a space inside the through electrode 22 where the through electrode 22 is not present. In other words, the through electrode 22 is a so-called conformal via.

[0031] As long as the through electrode 22 has conductivity, the method of forming the through electrode 22 is not particularly limited. For example, the through electrode 22 may be formed by a physical film formation method such as a vapor deposition method or a sputtering method, or may be formed by a chemical film formation method or a plating method. The through electrode 22 may be composed of a single layer having conductivity, or may include a plurality of layers having conductivity. Here, as shown in FIG. 2, an example will be described in which the through electrode 22 includes an adhesion layer 361, a seed layer 362, and a plating layer 363 arranged in this order from the side wall 21 side of the through hole 20 to the center side of the through hole 20.

[0032] The adhesion layer 361 is a layer formed as necessary between other components of the through electrode 22, such as the seed layer 362 and the plating layer 363, and the side wall 21 of the through hole 20 of the substrate 12. The adhesion layer 361 has higher adhesion to the substrate 12 than other components of the through electrode 22, such as the seed layer 362 and the plating layer 363. The adhesion layer 361 may also play a role in suppressing the diffusion of metal elements in other components of the through electrode 22, such as the seed layer 362 and the plating layer 363, into the inside of the substrate 12 via the side wall 21 of the through hole 20. When the seed layer 362 or the plating layer 363 contains copper, the material of the adhesion layer 361 may be, for example, titanium, titanium nitride, molybdenum, molybdenum nitride, tantalum, tantalum nitride, or the like, or a laminate of these materials. The material of the adhesion layer 361 may also be a conductive material having high adhesion to the substrate 12. For example, the material of the adhesion layer 361 may be titanium, molybdenum, tungsten, tantalum, nickel, chromium, aluminum, compounds thereof, alloys thereof, or laminates thereof. The thickness of the adhesion layer 361 is, for example, 10 nm or more and 1 μm or less. The adhesion layer 361 is formed by a physical film formation method such as a vapor deposition method or a sputtering method.

[0033] The seed layer 362 is a conductive layer that serves as a base for depositing metal ions in a plating solution to grow the plating layer 363 during an electrolytic plating process in which the plating layer 363 is formed by electrolytic plating. The seed layer 362 may be made of the same metal material as the plating layer 363, such as copper. The seed layer 362 has a thickness of, for example, 100 nm or more and 3 μm or less. The seed layer 362 is formed by, for example, electroless plating.

[0034] Although not shown, a layer capable of serving both as an adhesive layer and as a seed layer may be provided between the side wall 21 of the through hole 20 and the plating layer 363.

[0035] The plating layer 363 is a conductive layer formed by a plating process. The material constituting the plating layer 363 may be metals such as copper, gold, silver, platinum, rhodium, tin, aluminum, nickel, chromium, or alloys using these metals, or layers of these metals.

[0036] As shown in FIG. 1, the high-frequency component 10 may include an organic layer 26 located closer to the center of the through hole 20 than the through electrode 22. The "center" means that the distance between the organic layer 26 and the side wall 21 inside the through hole 20 is greater than the distance between the through electrode 22 and the side wall 21. The organic layer 26 includes an organic material having a dielectric tangent of 0.003 or less, more preferably 0.002 or less, and even more preferably 0.001 or less. The organic material of the organic layer 26 may be polyimide, epoxy, or the like. By forming the organic layer 26 using an organic material with a small dielectric tangent, it is possible to prevent a part of the electric signal that should pass through the capacitor 15 or the inductor 16 from passing through the organic layer 26. This makes it possible to expand the band of the high-frequency component 10 including the capacitor 15 or the inductor 16 to the high-frequency side.

[0037] (1st wiring structure part) 1, the first wiring structure 30 includes a first-surface first wiring layer 31 located on the first surface 13 of the substrate 12, a first-surface second wiring layer 32 located on the first-surface first wiring layer 31, and a first-surface third wiring layer 33 located on the first-surface second wiring layer 32. The configurations of the first-surface first wiring layer 31, the first-surface second wiring layer 32, and the first-surface third wiring layer 33 will be described below.

[0038] [First surface, first wiring layer] As shown in FIG. 1, the first-surface first wiring layer 31 has a first-surface first conductive layer 311 and a first-surface first insulating layer 312. The first-surface first conductive layer 311 is a layer having conductivity located on the first surface 13 of the substrate 12. The first-surface first conductive layer 311 may be connected to the through electrode 22. Similarly to the through electrode 22, the first-surface first conductive layer 311 may include an adhesion layer 361, a seed layer 362, and a plating layer 363 stacked in this order on the first surface 13 of the substrate 12. The material constituting the first-surface first conductive layer 311 is the same as the material constituting the through electrode 22. The thickness of the first-surface first conductive layer 311 is, for example, 5 μm or more and 20 μm or less.

[0039] The first-surface first insulating layer 312 is an insulating layer at least partially located on the first-surface first conductive layer 311. The first-surface first insulating layer 312 may partially cover the first-surface first conductive layer 311. In this case, the first-surface first insulating layer 312 may be in contact with not only the first-surface first conductive layer 311 but also the first surface 13 of the substrate 12. Note that "covering" means that the end 311e of the first-surface first conductive layer 311 and the first-surface first insulating layer 312 at least partially overlap with each other when the high-frequency component 10 is viewed along the normal direction of the first surface 13 of the substrate 12 as shown in FIG. 3.

[0040] The first surface first insulating layer 312 includes an inorganic material having a dielectric breakdown field of at least 6 MV / cm or more, more preferably 8 MV / cm or more. Silicon nitride such as SiN can be used as the inorganic material of the first surface first insulating layer 312. Other examples of the inorganic material of the first surface first insulating layer 312 include silicon oxide, aluminum oxide, and tantalum pentoxide. This can further improve the withstand voltage characteristics of the capacitor 15 including the first surface first insulating layer 312. A method for measuring the dielectric breakdown field will be described later in the examples. The relative dielectric constant of the inorganic material of the first surface first insulating layer 312 is, for example, 3 or more and 50 or less. The thickness of the first surface first insulating layer 312 is, for example, 50 nm or more and 400 nm or less.

[0041] Preferably, the leakage current in the inorganic material of the first surface first insulating layer 312 is less than 1×10 -12 A or less. This can further improve the electrical characteristics of capacitor 15 including first-surface first insulating layer 312. The method for measuring leakage current will be described later in the examples.

[0042] [First surface second wiring layer] The first-surface second wiring layer 32 has a first-surface second conductive layer 321 and a first-surface second insulating layer 322. The first-surface second conductive layer 321 is a layer having conductivity located on the first-surface first insulating layer 312. As shown in Fig. 1, the first-surface first conductive layer 311, the first-surface first insulating layer 312 located on the first-surface first conductive layer 311, and the first-surface second conductive layer 321 located on the first-surface first insulating layer 312 form the capacitor 15.

[0043] Like the through electrode 22 and the first-surface first conductive layer 311, the first-surface second conductive layer 321 may include an adhesion layer, a seed layer, and a plating layer laminated in this order on the first-surface first insulating layer 312. The material constituting the first-surface second conductive layer 321 is the same as the material constituting the through electrode 22 and the first-surface first conductive layer 311. The thickness of the first-surface second conductive layer 321 is, for example, not less than 5 μm and not more than 20 μm.

[0044] The first-surface second insulating layer 322 is an insulating layer located on the first-surface first insulating layer 312 and the first-surface second conductive layer 321. The first-surface second insulating layer 322 includes an organic material having a dielectric tangent of 0.003 or less, more preferably 0.002 or less, and even more preferably 0.001 or less. The organic material of the first-surface second insulating layer 322 may be polyimide, epoxy, or the like. By forming the first-surface second insulating layer 322 using an organic material with a small dielectric tangent, it is possible to prevent an electric signal that should pass through the capacitor 15 or the inductor 16 from passing through the first-surface second insulating layer 322. This makes it possible to expand the band of the high-frequency component 10 including the capacitor 15 and the inductor 16 to the high-frequency side.

[0045] The relative dielectric constant of the organic material of the first-side second insulating layer 322 is preferably 3.4 or less. Furthermore, the transmission loss of the organic material of the first-side second insulating layer 322 at 5 GHz is preferably 0.07 dB or less, more preferably 0.06 dB or less, and even more preferably 0.05 dB or less.

[0046] [First surface third wiring layer] The first-surface third wiring layer 33 has a first-surface third conductive layer 331 and a first-surface third insulating layer 332. The first-surface third conductive layer 331 is a layer having conductivity located on the first-surface first conductive layer 311 or the first-surface second conductive layer 321. In the example shown in FIG. 1 , the first-surface third conductive layer 331 includes a portion connected to the first-surface first conductive layer 311 which is one electrode of the capacitor 15, and a portion connected to the first-surface second conductive layer 321 which is the other electrode of the capacitor 15.

[0047] The first-surface third conductive layer 331 may include an adhesion layer, a seed layer, and a plating layer, which are laminated in this order, similar to the through electrode 22 and the first-surface first conductive layer 311. The material constituting the first-surface third conductive layer 331 is the same as the material constituting the through electrode 22 and the first-surface first conductive layer 311.

[0048] First-surface third insulating layer 332 is an insulating layer located on first-surface second insulating layer 322 and first-surface third conductive layer 331. Like first-surface second insulating layer 322, first-surface third insulating layer 332 contains an organic material having a dielectric tangent of 0.003 or less, more preferably 0.002 or less, and even more preferably 0.001 or less. Like first-surface second insulating layer 322, the organic material of first-surface third insulating layer 332 may be polyimide, epoxy, or the like.

[0049] (Second wiring structure part) 1, the second wiring structure 40 includes a second surface first wiring layer 41 located on the second surface 14 of the substrate 12. The second surface first wiring layer 41 has a second surface first conductive layer 411 and a second surface first insulating layer 412.

[0050] The second-surface first conductive layer 411 is a layer having conductivity located on the second surface 14 of the substrate 12. The second-surface first conductive layer 411 may be connected to the through electrode 22. Similarly to the through electrode 22 and the first-surface first conductive layer 311, the second-surface first conductive layer 411 may include an adhesion layer 361, a seed layer 362, and a plating layer 363 which are laminated in this order on the second surface 14 of the substrate 12. The material constituting the second-surface first conductive layer 411 is the same as the material constituting the through electrode 22 and the first-surface first conductive layer 311. The thickness of the second-surface first conductive layer 411 is, for example, 5 μm or more and 20 μm or less.

[0051] As shown in Figures 1 and 3, inductor 16 is formed by second surface first conductive layer 411, a through electrode 22 connected to second surface first conductive layer 411, and a first surface first conductive layer 311 connected to through electrode 22.

[0052] Second-surface first insulating layer 412 is an insulating layer located on second-surface first conductive layer 411 and on second surface 14 of substrate 12. Second-surface first insulating layer 412 contains an organic material having a dielectric tangent of 0.003 or less, more preferably 0.002 or less, and even more preferably 0.001 or less, similar to first-surface second insulating layer 322 and first-surface third insulating layer 332. As the organic material of second-surface first insulating layer 412, polyimide, epoxy, etc. can be used, similar to first-surface second insulating layer 322 and first-surface third insulating layer 332.

[0053] Manufacturing method for high frequency components An example of a method for manufacturing the high-frequency component 10 will now be described with reference to FIGS.

[0054] (Through hole formation process) First, the substrate 12 is prepared. Next, a resist layer is provided on at least one of the first surface 13 and the second surface 14. After that, an opening is provided in the resist layer at a position corresponding to the through hole 20. Next, the substrate 12 is processed at the opening in the resist layer, thereby forming the through hole 20 in the substrate 12 as shown in FIG. 4. Methods for processing the substrate 12 include dry etching methods such as reactive ion etching and deep reactive ion etching, and wet etching.

[0055] The through holes 20 may be formed in the substrate 12 by irradiating the substrate 12 with a laser. In this case, the resist layer does not need to be provided. As a laser for the laser processing, an excimer laser, a Nd:YAG laser, a femtosecond laser, or the like can be used. When an Nd:YAG laser is used, a fundamental wave with a wavelength of 1064 nm, a second harmonic with a wavelength of 532 nm, a third harmonic with a wavelength of 355 nm, or the like can be used.

[0056] Laser irradiation and wet etching can also be appropriately combined. Specifically, first, an altered layer is formed in the region of the substrate 12 where the through hole 20 is to be formed by laser irradiation. Then, the substrate 12 is immersed in hydrogen fluoride or the like to etch the altered layer. In this way, the through hole 20 can be formed in the substrate 12.

[0057] Alternatively, the through holes 20 may be formed in the substrate 12 by blasting, which involves spraying an abrasive material onto the substrate 12 .

[0058] (Through electrode formation process) Next, through electrodes 22 are formed on side walls 21 of through holes 20. In this embodiment, an example in which the first surface first conductive layer 311 and the second surface first conductive layer 411 are formed simultaneously with the through electrodes 22 will be described.

[0059] 5, an adhesion layer 361 is formed on the first surface 13, the second surface 14, and the sidewall 21 of the substrate 12 by a physical film formation method such as a vapor deposition method or a sputtering method. Then, a seed layer 362 is formed on the adhesion layer 361 by electroless plating. Then, a step of annealing the adhesion layer 361 and the seed layer 362 may be performed.

[0060] The method for forming the adhesion layer 361 and the seed layer 362 is not limited to the above-mentioned method. For example, the adhesion layer 361 containing zinc oxide or the like may be formed by a sol-gel method, and then the seed layer 362 may be formed on the adhesion layer 361 by an electroless plating method. In addition, both the adhesion layer 361 and the seed layer 362 may be formed by a physical film formation method such as a vapor deposition method or a sputtering method.

[0061] Next, as shown in FIG. 6, a resist layer 37 is partially formed on the seed layer 362. Then, as shown in FIG. 7, a plating layer 363 is formed by electrolytic plating on the seed layer 362 that is not covered by the resist layer 37. Thereafter, as shown in FIG. 8, the resist layer 37 is removed. Also, the adhesion layer 361 and the seed layer 362 are removed by, for example, wet etching. In this manner, the through electrode 22, the first surface first conductive layer 311, and the second surface first conductive layer 411 can be formed. This makes it possible to configure the inductor 16, which includes the second surface first conductive layer 411, the through electrode 22 connected to the second surface first conductive layer 411, and the first surface first conductive layer 311 connected to the through electrode 22. Note that a step of annealing the plating layer 363 may be performed.

[0062] (Surface treatment process) Next, a surface treatment step may be performed in which the surface of first-side first conductive layer 311 is exposed to plasma such as NH3 plasma. This makes it possible to remove oxides on the surface of first-side first conductive layer 311. For example, if first-side first conductive layer 311 contains copper, it is possible to remove copper oxide on the surface of first-side first conductive layer 311. This makes it possible to improve adhesion between first-side first conductive layer 311 and first-side first insulating layer 312 formed on first-side first conductive layer 311.

[0063] (First surface first insulating layer forming process) Next, the first surface first insulating layer 312 is formed on the first surface first conductive layer 311. First, as shown in FIG. 9, a resist layer 38 is formed partially on the first surface first conductive layer 311. Then, as shown in FIG. 10, the first surface first insulating layer 312 is formed on the first surface first conductive layer 311 and the portion of the first surface 13 of the substrate 12 that is not covered by the resist layer 38. For example, plasma CVD, sputtering, etc. can be used as a method for forming the first surface first insulating layer 312. Then, as shown in FIG. 11, the resist layer 38 is removed. In this manner, the first surface first insulating layer 312 can be formed partially on the first surface first conductive layer 311.

[0064] (Process of forming the first surface second conductive layer) 12, first-surface second conductive layer 321 is formed on first-surface first insulating layer 312. This makes it possible to configure capacitor 15 including first-surface first conductive layer 311, first-surface first insulating layer 312 on first-surface first conductive layer 311, and first-surface second conductive layer 321 on first-surface first insulating layer 312. The process of forming first-surface second conductive layer 321 is similar to the process of forming first-surface first conductive layer 311, and therefore description thereof will be omitted.

[0065] (First surface second insulating layer forming process) 13, a first-surface second insulating layer 322 is formed on the first-surface first insulating layer 312 and the first-surface second conductive layer 321. In addition, a second-surface first insulating layer 412 is formed on the second surface 14 of the substrate 12 and the second-surface first conductive layer 411.

[0066] For example, first, a second surface side film having a photosensitive layer containing an organic material and a base material is attached to the second surface 14 side of the substrate 12. Next, the second surface side film is subjected to an exposure process and a development process. This allows the second surface first insulating layer 412 made of the photosensitive layer of the second surface side film to be formed on the second surface 14 side of the substrate 12. Thereafter, a first surface side film having a photosensitive layer containing an organic material and a base material is attached to the first surface 13 side of the substrate 12. Next, the first surface side film is subjected to an exposure process and a development process so as to form an opening 323 as shown in Fig. 14. This makes it possible to obtain a first surface second insulating layer 322 made of the photosensitive layer of the first surface side film, in which the opening 323 is formed in a part on the first surface second conductive layer 321 and a part on the first surface first conductive layer 311.

[0067] 13, a part of the first-surface second insulating layer 322 or a part of the second-surface first insulating layer 412 may be provided inside the through-hole 20 to form the organic layer 26 filling the through-hole 20. For example, by pushing the above-mentioned second-surface side film or first-surface side film into the through-hole 20, the organic layer 26 can be formed inside the through-hole 20 simultaneously with the first-surface second insulating layer 322 or the second-surface first insulating layer 412. The organic layer 26 may be formed in a separate process from the second-surface first insulating layer 412 or the first-surface second insulating layer 322.

[0068] The method of forming the second-side first insulating layer 412 and the first-side second insulating layer 322 is not limited to the method of using a film. For example, first, a liquid containing an organic material such as polyimide is applied by a spin coating method or the like, and dried to form an organic layer. Next, the second-side first insulating layer 412 and the first-side second insulating layer 322 can also be formed by subjecting the organic layer to an exposure process and a development process.

[0069] (Process of forming the third conductive layer on the first surface) 14, a portion of first-surface first insulating layer 312 overlapping with opening 323 of first-surface second insulating layer 322 is etched to form an opening in first-surface first insulating layer 312. Next, first-surface third conductive layer 331 is formed, which is connected to first-surface first conductive layer 311 or first-surface second conductive layer 321 via opening 323 of first-surface second insulating layer 322 and the opening of first-surface first insulating layer 312. The process of forming first-surface third conductive layer 331 is similar to the process of forming first-surface first conductive layer 311, and therefore a description thereof will be omitted.

[0070] (First surface third insulating layer forming process) Thereafter, a first-side third insulating layer 332 is formed partially on the first-side second insulating layer 322 and the first-side third conductive layer 331. In this way, the high-frequency component 10 shown in Fig. 1 can be obtained. The method for forming the first-side third insulating layer 332 is not particularly limited. As in the case of the first-side second insulating layer 322, the first-side third insulating layer 332 can be formed by using a film or liquid containing an organic material.

[0071] (Functions of high frequency components) The operation of the high-frequency component 10 according to this embodiment will now be described.

[0072] In this embodiment, the substrate 12 of the high-frequency component 10 includes glass. Glass has higher insulating properties than silicon, which is used as a substrate for conventional high-frequency components. This makes it possible to prevent a part of the high-frequency signal passing through the capacitor 15 or the inductor 16 from passing through the substrate 12. This makes it possible to expand the band of the capacitor 15 or the inductor 16 to the high-frequency side. In addition, the withstand voltage characteristics of the capacitor 15 or the inductor 16 can be improved.

[0073] In the present embodiment, first-surface first insulating layer 312 constituting capacitor 15 contains an inorganic material having a dielectric breakdown field of 6 MV / cm or more. This can further improve the withstand voltage characteristics of capacitor 15. Furthermore, by making first-surface first insulating layer 312 have a thickness of 70 nm or more, the withstand voltage characteristics of capacitor 15 can further be improved.

[0074] In addition, in this embodiment, the organic materials contained in the first-surface second insulating layer 322, the first-surface third insulating layer 332, the second-surface first insulating layer 412, the organic layer 26, etc. have a dielectric tangent of 0.003 or less. This makes it possible to prevent a part of the high-frequency signal passing through the capacitor 15 or the inductor 16 from passing through the substrate 12. This makes it possible to further expand the band of the capacitor 15 or the inductor 16 to the high-frequency side.

[0075] In this embodiment, the first surface first conductive layer 311, the through electrode 22, and the second surface first conductive layer 411 constituting the capacitor 15 and the inductor 16 have a thickness of 5 μm or more. Therefore, it is possible to reduce the loss generated in the conductive layer compared to the case where a capacitor or an inductor is used using a thin film conductive layer created by a semiconductor process. In this respect, the band of the capacitor 15 and the inductor 16 can be expanded to the high frequency side.

[0076] In this embodiment, a surface treatment step is performed in which the surface of first-surface first conductive layer 311 is exposed to NH3 plasma before performing the step of forming first-surface first insulating layer 312 on first-surface first conductive layer 311. This makes it possible to improve the adhesion between first-surface first conductive layer 311 and first-surface first insulating layer 312.

[0077] It should be noted that various modifications can be made to the above-described embodiment. Below, the modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding parts in the above-described embodiment will be used for parts that can be configured in the same manner as in the above-described embodiment, and duplicated descriptions will be omitted. Also, if it is clear that the effects obtained in the above-described embodiment can also be obtained in the modified examples, the description may be omitted.

[0078] (First Modification) Fig. 15 is a cross-sectional view showing a high-frequency component 10 according to a first modification. As shown in Fig. 15, the through hole 20 in the substrate 12 of the high-frequency component 10 may have a shape whose width decreases from the first surface 13 and the second surface 14 of the substrate 12 toward the center of the substrate 12 in the thickness direction.

[0079] (Second Modification) In the above-described embodiment, an example has been described in which first-surface first insulating layer 312 of capacitor 15 partially covers first-surface first conductive layer 311. In this modification, an example of the structure of first-surface first conductive layer 311 and first-surface first insulating layer 312 in the case in which first-surface first insulating layer 312 of capacitor 15 partially covers first-surface first conductive layer 311 will be specifically described with reference to Figs. 17 to 23.

[0080] Fig. 17 is an enlarged plan view of capacitor 15 of high-frequency device 10 according to this modification. Fig. 18 is a cross-sectional view of capacitor 15 of Fig. 17 cut along line BB. First, first-surface first conductive layer 311 of capacitor 15 according to this modification will be described.

[0081] 18, the first surface first conductive layer 311 constituting the lower electrode of the capacitor 15 includes a seed layer 362 and a plating layer 363. Although not shown, in this modification, the first surface first conductive layer 311 may further include a barrier layer located between the seed layer 362 and the first surface 13 of the substrate 12, as in the above-described embodiment.

[0082] In the following description, among the multiple layers constituting the first-surface first conductive layer 311 of the capacitor 15, a layer located on the substrate 12 side, such as the seed layer 362, is also referred to as the underlayer 362. Moreover, among the multiple layers constituting the first-surface first conductive layer 311, a layer located farther from the substrate 12 than the underlayer 362 and the thickest layer, such as the plating layer 363, is also referred to as the main layer 363. The side surface 311f of the first-surface first conductive layer 311 includes a side surface 362f of the underlayer 362 and a side surface 363f of the plating layer 363. Note that the "side surface" refers to a surface that is visible when the first-surface first conductive layer 311 is viewed along the surface direction of the first surface 13 of the substrate 12.

[0083] As shown in FIG. 18, a gap 311s may exist between the side surface 311f of the first-surface first conductive layer 311 and the first surface 13 of the substrate 12. For example, as shown in FIG. 18, the side surface 362f of the underlayer 362 is located more inward than the side surface 363f of the main body layer 363. As a result, a gap 311s where the first-surface first conductive layer 311 does not exist is formed between the side surface 363f of the main body layer 363 and the first surface 13 of the substrate 12. Here, the "inner side" means the side closer to the center position of the capacitor 15 in the in-plane direction of the first surface 13 of the substrate 12 in the cross-sectional view of the capacitor 15. Such a side surface 362f of the underlayer 362 is generated by side etching the side surface 362f of the underlayer 362, as described later.

[0084] The side surface 363f of the main body layer 363 facing the gap 311s may include an inclined portion having a shape that displaces inward as it approaches the substrate 12 side. The inclined portion is, for example, a lower curved portion 363h located on the substrate 12 side and facing the gap 311s. The lower curved portion 363h has a shape that is convex outward. Note that "convex outward" means that a straight line or a plane circumscribing the lower curved portion 363h does not intersect with the main body layer 363. Such a lower curved portion 363h is generated due to the shape of the base of the resist layer 37 adjacent to the main body layer 363 when the main body layer 363 is formed by plating, as described later. In addition, the side surface 363f may include an upper curved portion 363g located on the side farther from the substrate 12. Note that "lower side" means a side closer to the substrate 12 than the center position of the main body layer 363 in the normal direction of the first surface 13 of the substrate 12. Moreover, the “upper side” means a side farther from the substrate 12 than the center position of the main layer 363 in the normal direction to the first surface 13 of the substrate 12 .

[0085] Next, the first-surface first insulating layer 312 of the capacitor 15 will be described. As shown in FIG. 18, the first-surface first insulating layer 312 includes a first portion 312a located on the upper surface 311a of the first-surface first conductive layer 311, and further includes a second portion 312b located on the side surface 311f of the first-surface first conductive layer 311. The second portion 312b is connected to the first portion 312a. In other words, the first portion 312a and the second portion 312b of the first-surface first insulating layer 312 extend continuously so as to cover the upper end of the side surface 311f of the first-surface first conductive layer 311.

[0086] 18, the reference character T1 indicates the thickness of the first portion 312a, and the reference character T2 indicates the thickness of the second portion 312b. The thickness T1 of the first portion 312a is, for example, 50 nm or more and 400 nm or less, as in the case of the above-mentioned embodiment. The thickness T1 is, for example, the thickness of the first portion 312a at the center position of the capacitor 15 in the in-plane direction of the first surface 13 of the substrate 12. The thickness T1 may be the maximum thickness of the first portion 312a.

[0087] Preferably, the thickness T2 of the second portion 312b is smaller than the thickness T1 of the first portion 312a. Also, preferably, the thickness T2 of the second portion 312b is equal to or greater than ¼ of the thickness T1 of the first portion 312a. The thickness T2 is, for example, the thickness of the second portion 312b at the central position in the thickness direction of the first-surface first conductive layer 311. The thickness T2 may be the maximum value of the thickness of the second portion 312b.

[0088] The second portion 312b of the first-surface first insulating layer 312 does not have to completely cover the side surface 311f of the first-surface first conductive layer 311. For example, an inclined portion such as the lower curved portion 363h of the side surface 311f of the first-surface first conductive layer 311 may be at least partially exposed from the first-surface first insulating layer 312. Such an exposed portion occurs because the first-surface first insulating layer 312 has difficulty entering the gap 311s of the first-surface first conductive layer 311, as described below.

[0089] 18, the first-surface first insulating layer 312 may further include a third portion 312c located on the first surface 13 of the substrate 12. The third portion 312c is not connected to the second portion 312b. That is, the third portion 312c is disconnected from the second portion 312b by the above-mentioned exposed portion. Between the second portion 312b and the third portion 312c, layers or materials other than the first-surface first conductive layer 311, such as the above-mentioned first-surface second insulating layer 322, may be present.

[0090] A method for manufacturing the capacitor 15 of the high-frequency device 10 according to this modified example will be described below with reference to FIGS.

[0091] First, the substrate 12 is prepared in the same manner as in the above-described embodiment. In addition, the base layer 362 is formed on the first surface 13, the second surface 14, and the sidewall 21 of the substrate 12 by, for example, electroless plating. Next, the resist layer 37 is partially formed on the base layer 362. After that, the resist layer 37 is exposed and developed to form an opening 37c in the resist layer 37 as shown in FIG. 19. The resist layer 37 includes a side surface 37f facing the opening 37c. The side surface 37f may include a base portion 37h in contact with the base layer 362. The base portion 37h protrudes toward the opening 37c and has a shape in which the thickness decreases toward the opening 37c. Such a base portion 37h can be formed, for example, when a negative photosensitive resin is used as the resist layer 37.

[0092] Next, a main body layer 363 is formed by electrolytic plating on the base layer 362 that is not covered by the resist layer 37. Then, the resist layer 37 is removed, as shown in Fig. 20. The main body layer 363 has a side surface 363f having a shape corresponding to the side surface 37f of the resist layer 37 and a lower curved portion 363h having a shape corresponding to the base portion 37h of the resist layer 37.

[0093] 21, the portion of the base layer 362 that was covered with the resist layer 37 is removed by, for example, wet etching. At this time, the base layer 362 is side-etched, so that the side surface 362f of the base layer 362 is positioned more inward than the side surface 363f of the main body layer 363. The main body layer 363 is also etched, although the etching rate is lower than that of the base layer 362. As a result, an upper curved portion 363g can be formed also on the upper side of the side surface 363f of the main body layer 363, as shown in FIG. 21.

[0094] Next, as in the case of the above-mentioned embodiment, a surface treatment step may be performed in which the surface of the first-side first conductive layer 311 is exposed to plasma such as NH3 plasma. Next, as shown in FIG. 22, the first-side first insulating layer 312 is formed on the first-side first conductive layer 311. For example, the first-side first insulating layer 312 is formed by a film formation method such as plasma CVD or sputtering. In this case, as shown in FIG. 22, the first-side first insulating layer 312 may be formed not only on the upper surface 311a of the first-side first conductive layer 311 but also on the side surface 311f. For example, the above-mentioned second portion 312b is formed on the side surface of the main body layer 363.

[0095] As described above, the side surface 362f of the underlayer 362 is located inside the side surface 363f of the main layer 363. Therefore, a gap 311s exists between the side surface 311f of the first-surface first conductive layer 311 and the first surface 13 of the substrate 12. During the film forming process, the material constituting the first-surface first insulating layer 312 is unlikely to enter the gap 311s. Therefore, the first-surface first insulating layer 312 is unlikely to be formed on the side surface 362f of the underlayer 362 and the lower curved portion 363h of the main layer 363. As a result, as shown in FIG. 22, the side surface 362f of the underlayer 362 and the lower curved portion 363h of the main layer 363 are at least partially exposed from the first-surface first insulating layer 312. Furthermore, the third portion 312c of the first-surface first insulating layer 312 formed on the first surface 13 of the substrate 12 is separated from the second portion 312b of the first-surface first insulating layer 312 formed on the side surface 311f of the first-surface first conductive layer 311.

[0096] Thereafter, first-surface second conductive layer 321 is formed on first portion 312a of first-surface first insulating layer 312. In this manner, capacitor 15 shown in FIG.

[0097] (Effects of the High-Frequency Device According to this Modification) In the capacitor 15 of the high-frequency device 10 according to this modification, the first-surface first insulating layer 312 is provided not only on the upper surface 311a but also on the side surface 311f of the first-surface first conductive layer 311. Therefore, even if the position of the first-surface second conductive layer 321 relative to the first-surface first conductive layer 311 is shifted due to manufacturing tolerances or the like, it is possible to prevent the first-surface second conductive layer 321 from coming into contact with the side surface 311f of the first-surface first conductive layer 311. This makes it possible to prevent the occurrence of a problem in which the first-surface first conductive layer 311 and the first-surface second conductive layer 321 are electrically connected to each other.

[0098] In addition, in capacitor 15 according to this modification, second portion 312b of first-surface first insulating layer 312 located on side surface 311f of first-surface first conductive layer 311 and third portion 312c of first-surface first insulating layer 312 located on first surface 13 of substrate 12 are disconnected. The effect obtained by this will be described with reference to FIG.

[0099] 23 is a cross-sectional view showing a case where a plurality of, for example, two capacitors 15 are adjacent to each other in the in-plane direction of the first surface 13 of the substrate 12. In this case, if the second portion 312b and the third portion 312c of the first surface first insulating layer 312 are connected, one capacitor 15 and the other capacitor 15 may electrically affect each other. As a result, for example, it is considered that the capacitance value of the capacitor 15 may deviate from the design value.

[0100] In contrast, according to this modification, the second portion 312b and the third portion 312c of the first-surface first insulating layer 312 are disconnected, so that it is possible to prevent one capacitor 15 from affecting the other capacitor 15 electrically. This makes it possible to prevent, for example, the capacitance value of the capacitor 15 from deviating from the design value.

[0101] (Other embodiments) One embodiment of the present disclosure is a high-frequency component comprising: a substrate having glass, the substrate including a first surface located on a first side and a second surface located on a second side opposite the first side; and a capacitor located on the first surface of the substrate, the capacitor having a first surface first conductive layer located on the first surface of the substrate, a first surface first insulating layer located on the first surface first conductive layer, and a first surface second conductive layer located on the first surface first insulating layer, the first surface first insulating layer including an inorganic material having a breakdown field of 6 MV / cm or greater.

[0102] In the high-frequency device according to one embodiment of the present disclosure, the leakage current of the inorganic material of the first insulating layer on the first surface is preferably 1×10 -12 A or below.

[0103] In the high-frequency device according to one embodiment of the present disclosure, the inorganic material of the first insulating layer on the first surface may include silicon nitride.

[0104] In the high-frequency device according to one embodiment of the present disclosure, the first-surface first insulating layer may have a thickness of 50 nm or more and 400 nm or less.

[0105] In the high-frequency device according to one embodiment of the present disclosure, the first-surface first conductive layer may have a thickness of not less than 5 μm and not more than 20 μm.

[0106] The high-frequency device according to one embodiment of the present disclosure may further include a first-side second insulating layer located on the first-side first insulating layer and including an organic material having a dielectric tangent of 0.003 or less.

[0107] In a high-frequency component according to one embodiment of the present disclosure, the substrate may have a through hole, and the high-frequency component may further include an inductor electrically connected to the capacitor, the inductor having the first surface first conductive layer, a through electrode connected to the first surface first conductive layer and extending along a side wall of the through hole, and a second surface first conductive layer connected to the through electrode and located on the second surface of the substrate.

[0108] The high-frequency device according to an embodiment of the present disclosure may further include an organic layer located closer to the center of the through hole than the through electrode, the organic layer including an organic material having a dielectric loss tangent of 0.003 or less.

[0109] In a high-frequency component according to one embodiment of the present disclosure, the first surface first insulating layer may include a first portion located on an upper surface of the first surface first conductive layer, and a second portion connected to the first portion and located on a side surface of the first surface first conductive layer.

[0110] In the high-frequency device according to one embodiment of the present disclosure, the second portion may have a thickness smaller than the thickness of the first portion and greater than or equal to ¼ of the thickness of the first portion.

[0111] In a high-frequency component according to one embodiment of the present disclosure, a side surface of the first surface first conductive layer may include a lower curved portion located on the substrate side, and the lower curved portion may be at least partially exposed from the first surface first insulating layer.

[0112] One embodiment of the present disclosure is a method for manufacturing a high-frequency component, comprising the steps of: preparing a substrate having glass, the substrate including a first surface located on a first side and a second surface located on a second side opposite the first side; forming a first-surface first conductive layer on the first surface of the substrate; forming a first-surface first insulating layer on the first-surface first conductive layer, the first-surface first insulating layer including an inorganic material having a breakdown field of 6 MV / cm or more; and forming a first-surface second conductive layer on the first-surface first insulating layer, wherein the first-surface first conductive layer, the first-surface first insulating layer, and the first-surface second conductive layer constitute a capacitor.

[0113] In the method for producing a high-frequency component according to an embodiment of the present disclosure, the leakage current of the inorganic material of the first insulating layer on the first surface is preferably 1×10 -12 A or below.

[0114] In the method for manufacturing a high-frequency component according to one embodiment of the present disclosure, the inorganic material of the first-surface first insulating layer may include silicon nitride.

[0115] In the method for manufacturing a high-frequency component according to one embodiment of the present disclosure, the first-surface first insulating layer may have a thickness of 50 nm or more and 400 nm or less.

[0116] In the method for manufacturing a high-frequency component according to one embodiment of the present disclosure, the first-surface first conductive layer may have a thickness of not less than 5 μm and not more than 20 μm.

[0117] The method for manufacturing a high-frequency component according to an embodiment of the present disclosure may further include a surface treatment step of exposing a surface of the first-surface first conductive layer to NH3 plasma prior to the step of forming the first-surface first insulating layer.

[0118] A method for manufacturing a high-frequency component according to one embodiment of the present disclosure may further include a step of forming a first-side second insulating layer on the first-side first insulating layer, the first-side second insulating layer including an organic material having a dielectric tangent of 0.003 or less.

[0119] In a method for manufacturing a high-frequency component according to an embodiment of the present disclosure, the substrate may have a through hole, and the method may further include forming a through electrode connected to the first-surface first conductive layer and extending along a sidewall of the through hole, and forming a second-surface first conductive layer connected to the through electrode and located on the second surface of the substrate. In this case, the first-surface first conductive layer, the through electrode, and the second-surface first conductive layer form an inductor.

[0120] The method for manufacturing a high-frequency component according to an embodiment of the present disclosure may further include a step of forming an organic layer located closer to the center of the through hole than the through electrode, the organic layer including an organic material having a dielectric tangent of 0.003 or less. EXAMPLES

[0121] Next, the present disclosure will be described in more detail with reference to examples. However, the present disclosure is not limited to the description of the following examples as long as it does not depart from the gist of the disclosure.

[0122] (Evaluation of inorganic materials) The dielectric breakdown field of the insulating layer containing an inorganic material was measured in accordance with JIS C 2110-1: 2010. The following four types of insulating layer containing an inorganic material were prepared. A Keithley picoammeter was used as the measuring device. A 200 nm thick layer of SiN fabricated by plasma CVD. A 200 nm thick layer of SiN prepared by sputtering. A 200 nm thick layer of SiO2 prepared by sputtering 100 nm thick AlO x Layer (x is 2 to 4)

[0123] In addition, the leakage current, that is, the current that flows when a DC voltage of 20 V is applied to the four types of insulating layers, was measured. A Keithley picoammeter was used as the measuring device.

[0124] The measurement results of the dielectric breakdown field and leakage current are shown in Table 1. By using a layer formed by the plasma CVD method as an insulating layer, the dielectric breakdown field of 6MV / cm or more and the leakage current of 1×10 12 It was possible to achieve a leakage current of less than A. [Table 1]

[0125] (Evaluation of organic materials) The dielectric loss tangent and relative dielectric constant of the insulating layer containing an organic material were measured in accordance with JIS C 2138:2007. The following five types of insulating layer containing an organic material were prepared. The measuring instrument used was a PNA Network Analyzer manufactured by Keysight. Film type polyimide Product name: LPA1526 Thickness: 19μm Coating type polyimide Product name: HD7010 Thickness: 9μm Coating type polyimide Product name: PN2010 Thickness: 9μm Film type epoxy Product name: PFR Thickness: 20μm Film type epoxy Product name: FZ Thickness: 20μm

[0126] In addition, the transmission loss of the above five types of insulating layers at 5 GHz was measured using a Keysight PNA Network Analyzer.

[0127] The measurement results of the dielectric loss tangent, dielectric constant, and transmission loss are shown in Table 2. By using a layer formed of polyimide as the insulating layer, it was possible to achieve a dielectric loss tangent of 0.003 or less, a dielectric constant of 3.4 or less, and a transmission loss of 0.07 or less. [Table 2] [Explanation of symbols]

[0128] 10 High Frequency Components 12 Substrate 13 Page 1 14 Side 2 15 Capacitor 16 Inductor 20 Through hole 21 Side wall 22 Through electrode 26 Organic layer 30 1st wiring structure section 31 1st surface 1st wiring layer 311 1st surface 1st conductive layer 311a top side 311f side 312 1st surface 1st insulating layer 312a Part 1 312b Part 2 312c 3rd part 32 1st side 2nd wiring layer 321 1st surface 2nd conductive layer 322 1st surface 2nd insulating layer 33 1st side 3rd wiring layer 331 1st surface 3rd conductive layer 332 1st surface 3rd insulating layer 361 Adhesion layer 362 Seed layer (base layer) 362f side 363 Plating layer (main body layer) 363f side 363g Upper curved part 363h Lower curved part 40 2nd wiring structure section 41 2nd side 1st wiring layer 411 2nd surface 1st conductive layer 412 2nd surface 1st insulating layer

Claims

[Claim 1] A first surface first conductive layer; a first surface first insulating layer located on the first surface first conductive layer; a first-side second conductive layer located on the first-side first insulating layer; the first surface first insulating layer overlapping the first surface second conductive layer constitutes a capacitor together with the first surface first conductive layer and the first surface second conductive layer; the first surface first insulating layer includes an inorganic material having a dielectric breakdown field of 6 MV / cm or more, the first surface first insulating layer includes a first portion located on a top surface of the first surface first conductive layer, and a second portion connected to the first portion and located on a side surface of the first surface first conductive layer, A high-frequency component, wherein the thickness of the second portion is smaller than the thickness of the first portion and is equal to or greater than ¼ of the thickness of the first portion.

Images