Laser processing device

Abstract

To provide a laser processing device capable of improving processing accuracy.SOLUTION: A laser processing device has a moving mechanism of changing a relative position between a processing head and a processing object in a second direction crossing a first direction, wherein a first light-emitting element has a first substrate having a longitudinal direction in a third direction crossing the first direction and the second direction, and a plurality of first lasers which are provided on the first substrate and are aligned in the third direction, each of the plurality of first lasers has a light-emitting part for emitting light when current is injected thereto, out of the plurality of first lasers, current is not injected to the light-emitting part of a first end laser positioned at a position closest to the third direction side, and the light-emitting part of a second end laser positioned on an opposite side farthest away from the third direction, and out of the plurality of first lasers, current is injected to the light-emitting part of a first intermediate laser positioned between the first end laser and the second end laser, and the laser beam is emitted thereto.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a laser processing apparatus. [Background technology]

[0002] Laser processing devices that process objects by irradiating them with a laser are known. Such laser processing devices are used, for example, as metal 3D printers that utilize selective laser melting (SLM).

[0003] For example, Patent Document 1 describes a three-dimensional printer device having a printer head configured with a light-emitting element array in which laser elements are arranged, a liquid tank that contains a photocurable liquid that hardens when exposed to light emitted from the printer head, and a stage portion on which a molded product formed by hardening when exposed to light is attached. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2021-154714 A Summary of the Invention [Problem to be solved by the invention]

[0005] In the laser processing apparatus as described above, it is desirable to improve the processing accuracy. [Means for solving the problem]

[0006] One aspect of the laser processing apparatus according to the present invention is to a processing head having a first light-emitting element that emits laser light in a first direction toward the object to be processed; a moving mechanism that changes a relative position between the processing head and the workpiece along a second direction intersecting the first direction; having The first light emitting element is a first substrate having a longitudinal direction along a third direction intersecting the first direction and the second direction; A plurality of first lasers provided on the first substrate and aligned along the third direction; having Each of the plurality of first lasers has a light emitting portion that emits light when a current is injected therein; A current is not injected into the light emitting portion of a first end laser located closest to the third direction among the plurality of first lasers and the light emitting portion of a second end laser located closest to the opposite side of the third direction, A current is injected into the light emitting portion of a first intermediate laser, which is located between the first end laser and the second end laser, among the plurality of first lasers, to emit the laser light.

[0007] One aspect of the laser processing apparatus according to the present invention is to a processing head having a first light-emitting element that emits laser light in a first direction toward the object to be processed; a moving mechanism that changes a relative position between the processing head and the workpiece along a second direction intersecting the first direction; having The first light emitting element is a first substrate having a longitudinal direction along a third direction intersecting the first direction and the second direction; A plurality of first lasers provided on the first substrate and aligned along the third direction; having Among the plurality of first lasers, a first end laser located closest to the third direction side is A first light emitting unit; a first shielding portion that shields the light generated by the first light emitting portion; having Among the plurality of first lasers, a second end laser located on the opposite side to the third direction is A second light emitting unit; a second shielding portion that shields the light generated by the second light emitting portion; having The laser light is emitted from a first intermediate laser, which is located between the first end laser and the second end laser, among the plurality of first lasers. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a perspective view showing a schematic diagram of a laser processing apparatus according to an embodiment of the present invention. [Diagram 2] FIG. 2 is a functional block diagram of the laser processing device according to the embodiment. [Diagram 3] FIG. 1 is a plan view showing a schematic diagram of a laser processing apparatus according to an embodiment of the present invention. [Figure 4] FIG. 1 is a cross-sectional view illustrating a laser processing apparatus according to an embodiment of the present invention. [Diagram 5] FIG. 1 is a plan view showing a schematic diagram of a laser processing apparatus according to an embodiment of the present invention. [Figure 6] 5A to 5C are cross-sectional views illustrating a manufacturing process of the laser processing device according to the embodiment. [Figure 7] 5A to 5C are cross-sectional views illustrating a manufacturing process of the laser processing device according to the embodiment. [Figure 8] 5A to 5C are cross-sectional views illustrating a manufacturing process of the laser processing device according to the embodiment. [Figure 9] 5A to 5C are cross-sectional views illustrating a manufacturing process of the laser processing device according to the embodiment. [Figure 10] FIG. 4 is a cross-sectional view that illustrates a laser processing apparatus according to a first modified example of the embodiment. [Figure 11] FIG. 11 is a plan view that illustrates a laser processing apparatus according to a second modified example of the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Preferred embodiments of the present invention will be described in detail below with reference to the drawings. Note that the embodiments described below do not unduly limit the contents of the present invention described in the claims. In addition, not all of the configurations described below are necessarily essential components of the present invention.

[0010] 1. Laser processing equipment Configuration First, the laser processing device according to the present embodiment will be described with reference to the drawings. Fig. 1 is a perspective view showing a laser processing device 100 according to the present embodiment. Fig. 2 is a functional block diagram of the laser processing device 100 according to the present embodiment. In Fig. 1, an X-axis, a Y-axis, and a Z-axis are illustrated as three axes perpendicular to each other.

[0011] The laser processing device 100 is, for example, a metal 3D printer that uses a selective laser melting (SLM) method. As shown in Figures 1 and 2, the laser processing device 100 has, for example, a processing head 10, a moving mechanism 20, a condenser lens 30, a stage 40, an input buffer memory 50, a storage unit 52, a processing head position detection unit 54, a base position detection unit 56, and a control unit 58.

[0012] 1, the processing head 10 emits a laser beam in a first direction toward a processing object. In the illustrated example, the first direction is the +Z axis direction. Details of the processing head 10 will be described later.

[0013] The moving mechanism 20 supports the machining head 10. In the illustrated example, the machining head 10 is located in the +Z axis direction of the moving mechanism 20. The moving mechanism 20 changes the relative position between the machining head 10 and the workpiece along a second direction intersecting the first direction. In the illustrated example, the second direction is the +Y axis direction. The moving mechanism 20 moves the machining head 10, for example, in the +Y axis direction. The moving mechanism 20 may also move the machining head 10 in the ±Y axis directions. In the illustrated example, the moving mechanism 20 has a rod-like shape extending in the +Y axis direction. The moving mechanism 20 is configured to include, for example, a motor not shown.

[0014] Although not shown in the figure, the moving mechanism 20 may change the relative position between the processing head 10 and the workpiece in the ±Y-axis direction by moving the workpiece without moving the processing head 10 in the ±Y-axis direction.

[0015] The condensing lens 30 condenses the laser light emitted from the processing head 10. In the illustrated example, the condensing lens 30 is located in the +Z axis direction of the processing head 10. The condensing lens 30 moves in the ±Y axis directions in conjunction with the movement of the processing head 10. The condensing lens 30 is supported, for example, by a moving mechanism (not illustrated).

[0016] 1 and 2, the stage 40 has, for example, a base 42 and an elevator mechanism 44. Metal particles G to be processed are supplied to the base 42. The metal particles G are irradiated with laser light emitted from the condenser lens 30. The elevator mechanism 44 moves the base 42 in the ±Z axis directions. The elevator mechanism 44 is configured to include, for example, a motor (not shown).

[0017] The input buffer memory 50 receives data related to the laser irradiation of the processing head 10, i.e., drawing pattern data, from an external information processing device (not shown). As shown in Fig. 2, the input buffer memory 50 supplies the drawing pattern data to a control unit 58. The control unit 58 stores the drawing pattern data in a storage unit 52. The input buffer memory 50 and the storage unit 52 are composed of, for example, a RAM (Random Access Memory) and a ROM (Read Only Memory).

[0018] The machining head position detection unit 54 detects the position of the machining head 10 in the ±Y-axis directions, and inputs a detection signal to the control unit 58. The base position detection unit 56 detects the position of the base 42 in the ±Z-axis directions, and inputs a detection signal to the control unit 58. The machining head position detection unit 54 and the base position detection unit 56 are composed of, for example, a linear encoder, a laser length measuring device, etc.

[0019] The control unit 58 controls the moving mechanism 20 and the elevator mechanism 44 based on detection signals from the machining head position detection unit 54 and the base position detection unit 56. Furthermore, the control unit 58 reads out drawing pattern data stored in the memory unit 52, and controls the machining head 10 based on the read out drawing pattern data. The control unit 58 is composed of, for example, a CPU (Central Processing Unit) and a dedicated circuit.

[0020] 1.2. Operation In the laser processing device 100, first, metal particles G that will become the first layer of the processing object are supplied to the base 42. Next, the control unit 58 controls the moving mechanism 20 to move the processing head 10 in the +Y axis direction while controlling the processing head 10 based on the drawing pattern data to perform an irradiation process in which the laser light is irradiated onto the metal particles G that will become the first layer. The portions of the metal particles G that are irradiated with the laser light are melted and solidified.

[0021] Next, the control unit 58 controls the moving mechanism 20 to move the processing head 10 in the -Y-axis direction, returning the processing head 10 to its initial position, and controls the elevator mechanism 44 to perform a movement process to move the base 42 by one layer in the +Z-axis direction.

[0022] Then, the control unit 58 repeats the above irradiation process and movement process until it is determined that all layers of the object have been formed based on the drawing pattern data.

[0023] After it is determined that all layers of the object to be processed have been formed, the unmelted and unsolidified portions of the metal particles G are removed, for example, by air blowing.

[0024] In this manner, an object to be processed having a desired shape can be formed.

[0025] 1.3. Processing head Fig. 3 is a plan view that diagrammatically illustrates the processing head 10. As shown in Fig. 3, the processing head 10 has, for example, a support substrate 12 and a light-emitting element 14.

[0026] The support substrate 12 supports the light emitting elements 14. The support substrate 12 is connected to, for example, a moving mechanism 20. The material of the support substrate 12 is not particularly limited as long as it can support the light emitting elements 14.

[0027] The light emitting element 14 is provided on the support substrate 12. The light emitting element 14 is, for example, bonded to the support substrate 12. For example, a plurality of light emitting elements 14 are provided. In the illustrated example, eight light emitting elements 14 are provided. The plurality of light emitting elements 14 are aligned along the +X axis direction. A first light emitting element 14a of the plurality of light emitting elements 14 is provided between a second light emitting element 14b of the plurality of light emitting elements 14 and a third light emitting element 14c of the plurality of light emitting elements 14. The first light emitting element 14a and the second light emitting element 14b are adjacent to each other. The first light emitting element 14a and the third light emitting element 14c are adjacent to each other. The shapes of the plurality of light emitting elements 14 are, for example, the same as each other.

[0028] The light emitting element 14 emits laser light in the +Z axis direction toward the workpiece. The light emitting element 14 has a substrate 16 and a plurality of lasers 18.

[0029] The substrate 16 is provided on the support substrate 12. The substrate 16 is, for example, bonded to the support substrate 12. When viewed from the +Z axis direction, the substrate 16 has a longitudinal direction along a third direction L intersecting the second direction. When viewed from the +Z axis direction, the third direction L is inclined with respect to the +Y axis direction. In the illustrated example, the third direction L is a direction inclined at 45° with respect to the +X axis direction and the +Y axis direction. The planar shape of the substrate 16 is, for example, a rectangle. The longitudinal direction of the substrate 16 is, for example, the direction of the long side. The third direction L is not parallel to the +X axis direction and the +Y axis direction. The third direction L is not perpendicular to the +X axis direction and the +Y axis direction.

[0030] The laser 18 is provided on the substrate 16. In the illustrated example, the planar shape of the laser 18 is circular, but is not particularly limited. The planar shape of the laser 18 may be rectangular. One light-emitting element 14 has multiple lasers 18. One light-emitting element 14 has three or more lasers 18. In the illustrated example, one light-emitting element 14 has six lasers 18. The multiple lasers 18 are aligned along the third direction L. The multiple lasers 18 are aligned, for example, at equal intervals along the third direction L.

[0031] Of the multiple lasers 18, the end laser 18a is located closest to the third direction L among the multiple lasers 18. Of the multiple lasers 18, the end laser 18b is located closest to the third direction L among the multiple lasers 18. Of the multiple lasers 18, the intermediate laser 18c is located between the end laser 18a and the end laser 18b. In the illustrated example, four intermediate lasers 18c are provided in one light-emitting element 14.

[0032] The first light-emitting element 14a has a first substrate 16a as the substrate 16 and a first laser 181 as the laser 18. In the first light-emitting element 14a, a first end laser 18a1 as the end laser 18a is located closest to the third direction L among the first laser 181. A second end laser 18b2 as the end laser 18b is located closest to the third direction L among the first laser 181. A first intermediate laser 18c1 as the intermediate laser 18c is located between the first end laser 18a1 and the second end laser 18b2.

[0033] The second light-emitting element 14b has a second substrate 16b as the substrate 16 and a second laser 182 as the laser 18. In the second light-emitting element 14b, a third end laser 18a3 as the end laser 18a is located closest to the third direction L among the second lasers 182. A fourth end laser 18b4 as the end laser 18b is located closest to the third direction L among the second lasers 182. A second intermediate laser 18c2 as the intermediate laser 18c is located between the third end laser 18a3 and the fourth end laser 18b4.

[0034] The third light-emitting element 14c has a third substrate 16c as the substrate 16 and a third laser 183 as the laser 18. The substrates 16a, 16b, and 16c are spaced apart from each other. In the third light-emitting element 14c, the fifth end laser 18a5 as the end laser 18a is located closest to the third direction L among the third lasers 183. The sixth end laser 18b6 as the end laser 18b is located closest to the third direction L among the third lasers 183. The third intermediate laser 18c3 as the intermediate laser 18c is located between the fifth end laser 18a5 and the sixth end laser 18b6.

[0035] When viewed from the +Y-axis direction, the first end laser 18a1 overlaps with the second intermediate laser 18c2. The second end laser 18b2 overlaps with the third intermediate laser 18c3. The fourth end laser 18b4 overlaps with the first intermediate laser 18c1. The fifth end laser 18a5 overlaps with the first intermediate laser 18c1.

[0036] In this way, when viewed from the +Y-axis direction, the end laser 18a of the light-emitting element 14 overlaps with the intermediate laser 18c of the light-emitting element 14 adjacent to the light-emitting element 14 in the -X-axis direction. The end laser 18b of the light-emitting element 14 overlaps with the intermediate laser 18c of the light-emitting element 14 adjacent to the light-emitting element 14 in the +X-axis direction. For example, when viewed from the +Y-axis direction, the center of the end laser 18a of the light-emitting element 14 overlaps with the center of the intermediate laser 18c of the light-emitting element 14 adjacent to the light-emitting element 14 in the -X-axis direction. The center of the end laser 18b of the light-emitting element 14 overlaps with the center of the intermediate laser 18c of the light-emitting element 14 adjacent to the light-emitting element 14 in the +X-axis direction.

[0037] Fig. 4 is a cross-sectional view taken along line IV-IV in Fig. 3, which illustrates the light-emitting element 14 of the processing head 10. The laser 18 is a surface-emitting laser. The laser 18 is, for example, a photonic crystal surface-emitting laser (PCSEL).

[0038] 4, the laser 18 has, for example, a base 102, a first semiconductor layer 104, a first guide layer 106, a quantum well layer 108, a second guide layer 110, a second semiconductor layer 112, a contact layer 114, a first electrode 116, and a second electrode 118. In one light-emitting element 14, the multiple lasers 18 have the same structure. In the example shown in FIG. 4, the end laser 18a and the intermediate laser 18c have the same structure.

[0039] The base 102 is formed of the substrate 16. The base 102 is a portion of the substrate 16 that overlaps with the quantum well layer 108 in a plan view. The base 102 is provided integrally with, for example, a plurality of lasers 18. The base 102 may be configured to reflect light generated in the quantum well layer 108 in the +Z-axis direction. The substrate 16 is, for example, an n-type semiconductor substrate doped with Si.

[0040] The first semiconductor layer 104 is provided on the base 102. The first semiconductor layer 104 is provided between the base 102 and the first guide layer 106. The first semiconductor layer 104 has a first conductivity type. The first semiconductor layer 104 is, for example, an n-type GaN layer doped with Si.

[0041] In this specification, in the stacking direction of the first guide layer 106 and the quantum well layer 108, when the quantum well layer 108 is used as a reference, the direction from the quantum well layer 108 to the second guide layer 110 is referred to as "up" and the direction from the quantum well layer 108 to the first guide layer 106 is referred to as "down."

[0042] The first guide layer 106 is provided on the first semiconductor layer 104. The first guide layer 106 is provided between the first semiconductor layer 104 and the quantum well layer 108. The first guide layer 106 has, for example, an SL (Semiconductor Superlattice) structure composed of an i-type GaN layer and an InGaN layer that are not intentionally doped with impurities. The number of GaN layers and InGaN layers that compose the first guide layer 106 is not particularly limited.

[0043] An opening 107 is provided in the first guide layer 106. The opening 107 is, for example, a hole. Here, FIG. 5 is a plan view that shows a schematic diagram of the laser 18. In the example shown in FIG. 5, the planar shape of the laser 18 is a circle. In the illustrated example, the planar shape of the laser 18 is the same as the planar shape of the quantum well layer 108. The planar shape of the opening 107 is a circle. The diameter of the opening 107 is, for example, not less than 50 nm and not more than 500 nm.

[0044] Note that the "diameter of opening 107" refers to the diameter when opening 107 has a circular planar shape, and refers to the diameter of the smallest inclusive circle when opening 107 has a non-circular planar shape. For example, when opening 107 has a polygonal planar shape, the diameter of opening 107 refers to the diameter of the smallest circle that includes the polygon therein, and when opening 107 has an ellipse planar shape, the diameter of opening 107 refers to the diameter of the smallest circle that includes the ellipse therein.

[0045] A plurality of openings 107 are provided. The plurality of openings 107 are spaced apart from each other. The interval between adjacent openings 107 is, for example, 1 nm or more and 500 nm or less. The plurality of openings 107 are arranged at a predetermined pitch along a predetermined direction in a plan view. The plurality of openings 107 are arranged, for example, in a regular triangular lattice pattern or a square lattice pattern. In the illustrated example, the plurality of columnar portions are arranged in a square lattice pattern. The plurality of openings 107 can exhibit a photonic crystal effect.

[0046] The "pitch of openings 107" refers to the distance between the centers of adjacent openings 107 along a predetermined direction. When the planar shape of openings 107 is a circle, the "center of openings 107" refers to the center of the circle, and when the planar shape of openings 107 is a shape other than a circle, the "center of openings 107" refers to the center of the smallest inclusive circle. For example, when the planar shape of openings 107 is a polygon, the center of openings 107 refers to the center of the smallest circle that contains the polygon therein, and when the planar shape of openings 107 is an ellipse, the center of openings 107 refers to the center of the smallest circle that contains the ellipse therein.

[0047] The quantum well layer 108 is provided on the first guide layer 106. The quantum well layer 108 is provided between the first guide layer 106 and the second guide layer 110. The quantum well layer 108 is a light emitting portion that emits light when a current is injected. The quantum well layer 108 has, for example, a well layer and a barrier layer. The well layer and the barrier layer are i-type semiconductor layers that are not intentionally doped with impurities. The well layer is, for example, an InGaN layer. The barrier layer is, for example, a GaN layer. The quantum well layer 108 has an MQW (Multiple Quantum Well) structure composed of a well layer and a barrier layer.

[0048] There is no particular limit to the number of well layers and barrier layers constituting the quantum well layer 108. For example, only one well layer may be provided, in which case the quantum well layer 108 has a single quantum well (SQW) structure.

[0049] The second guide layer 110 is provided on the quantum well layer 108. The second guide layer 110 is provided between the quantum well layer 108 and the second semiconductor layer 112. The second guide layer 110 has an SL structure composed of an i-type GaN layer and an InGaN layer that are not intentionally doped with impurities, for example. The number of GaN layers and InGaN layers that compose the second guide layer 110 is not particularly limited. The first guide layer 106 and the second guide layer 110 have the function of increasing the optical confinement coefficient of the laser 18.

[0050] Although not shown, the multiple openings 107 may be provided in the second guide layer 110 instead of in the first guide layer 106. Alternatively, the openings 107 may be filled with a member having a lower refractive index than the first guide layer 106.

[0051] The second semiconductor layer 112 is provided on the second guide layer 110. The second semiconductor layer 112 is provided between the second guide layer 110 and the contact layer 114. The second semiconductor layer 112 has a second conductivity type different from the first conductivity type. The second semiconductor layer 112 is, for example, a p-type GaN layer doped with Mg. The first semiconductor layer 104 and the second semiconductor layer 112 are cladding layers having a function of confining light in the quantum well layer 108.

[0052] The contact layer 114 is provided on the second semiconductor layer 112. The contact layer 114 is provided between the second semiconductor layer 112 and the second electrode 118. The contact layer 114 is, for example, a p-type GaN layer doped with Mg. The impurity concentration of the contact layer 114 is higher than the impurity concentration of the second semiconductor layer 112.

[0053] The first electrode 116 is provided under the base 102. The base 102 may be in ohmic contact with the first electrode 116. The first electrode 116 is electrically connected to the first semiconductor layer 104 via the base 102. The first electrode 116 is provided integrally in, for example, the multiple lasers 18. In the illustrated example, the first electrode 116 is a common electrode in the multiple lasers 18. The first electrode 116 is, for example, a layer formed by laminating a Ni layer and an Au layer in this order from the base 102 side. The first electrode 116 is one of the electrodes for injecting a current into the quantum well layer 108.

[0054] The second electrode 118 is provided on the contact layer 114. The contact layer 114 may be in ohmic contact with the second electrode 118. The second electrode 118 is electrically connected to the second semiconductor layer 112 via the contact layer 114. The second electrode 118 is, for example, formed by laminating a Cr layer, a Ni layer, and an Au layer in this order from the contact layer 114 side. The second electrode 118 is the other electrode for injecting a current into the quantum well layer 108.

[0055] The second electrode 118 is provided with a through hole 119. The through hole 119 penetrates the second electrode 118. In the example shown in Fig. 5, the through hole 119 has a circular shape. Light generated in the quantum well layer 108 passes through the through hole 119 and is emitted.

[0056] In the intermediate laser 18c, a pin diode is formed by the p-type second semiconductor layer 112, the i-type quantum well layer 108 and guide layers 106 and 110 that are not intentionally doped with impurities, and the n-type first semiconductor layer 104. In the intermediate laser 18c, when a forward bias voltage of the pin diode is applied between the first electrode 116 and the second electrode 118 by a driving circuit (not shown), a current is injected into the quantum well layer 108, and recombination of electrons and holes occurs in the quantum well layer 108. This recombination generates light. The light generated in the quantum well layer 108 propagates in a direction perpendicular to the +Z-axis direction, forms a standing wave due to the photonic crystal effect of the multiple openings 107, receives gain in the quantum well layer 108, and oscillates as a laser. Then, in the intermediate laser 18c, the diffracted light is emitted in the +Z-axis direction as a laser light.

[0057] On the other hand, no current is injected into the quantum well layer 108 of the edge lasers 18a and 18b. For example, no bias voltage is applied between the first electrode 116 and the second electrode 118 of the edge lasers 18a and 18b. Although not shown, the drive circuit and the second electrode 118 of the edge lasers 18a and 18b may be electrically insulated. In addition, although not shown, the edge lasers 18a and 18b may not have the second electrode 118.

[0058] In the illustrated example, the first semiconductor layer 104, the first guide layer 106, and the quantum well layer 108 are separated from each other in adjacent lasers 18. Although not illustrated, the first semiconductor layer 104 may be a common layer, the first guide layer 106 may be a common layer, and the quantum well layer 108 may be a common layer in adjacent lasers 18. In this case, the planar shape of the laser 18 is the same as the planar shape of the contact layer 114.

[0059] Although the InGaN quantum well layer 108 has been described above, various material systems capable of emitting light when a current is injected according to the wavelength of the emitted light can be used for the quantum well layer 108. For example, semiconductor materials such as AlGaN, AlGaAs, InGaAs, InGaAsP, InP, GaP, and AlGaP can be used.

[0060] 1.4. Manufacturing method of the processing head Next, a manufacturing method of the processing head 10 will be described with reference to the drawings. Fig. 6 to Fig. 9 are cross-sectional views that typically show the manufacturing process of the processing head 10.

[0061] 6, the first semiconductor layer 104 and the first guide layer 106 are epitaxially grown on the substrate 16. Examples of the epitaxial growth method include a metal organic chemical vapor deposition (MOCVD) method and a molecular beam epitaxy (MBE) method.

[0062] For example, the substrate 16 is warped due to heating during epitaxial growth and subsequent cooling. In the illustrated example, the substrate 16 is warped such that the central portion of the substrate 16 is positioned higher than the peripheral portion of the substrate 16. As the substrate 16 warps, the first semiconductor layer 104 and the first guide layer 106 also warp. For convenience, the warp of the substrate 16 is omitted in FIG. 4.

[0063] As shown in Fig. 7, a resist layer 2 is applied onto the first guide layer 106. The resist layer 2 is applied by, for example, a spin coating method. Due to warping of the substrate 16, the thickness of the peripheral portion of the resist layer 2 is smaller than the thickness of the central portion of the resist layer 2. The material of the resist layer 2 is, for example, a photoresist whose properties change when exposed to UV (ultraviolet).

[0064] 8, the resist layer 2 is patterned to form a plurality of openings 4. The patterning is performed by, for example, a nanoimprinting method, which allows a large area to be processed at once.

[0065] As shown in Fig. 9, the first guide layer 106 is dry-etched using the resist layer 2 as a mask to form a plurality of openings 107 in the first guide layer 106. As described above, the thickness of the peripheral portion of the resist layer 2 is smaller than the thickness of the central portion of the resist layer 2, so that the peripheral portion of the resist layer 2 is removed during dry etching. As a result, the peripheral portion of the first guide layer 106 is site-etched, and the diameter D1 of the openings 107 in the peripheral portion becomes larger than the diameter D2 of the openings 107 in the central portion. Thereafter, the resist layer 2 is removed by a known method.

[0066] After the opening 107 is formed, the first guide layer 106 is further epitaxially grown, thereby sealing the opening 107. Examples of the epitaxial growth method include the MOCVD method and the MBE method.

[0067] 4, the quantum well layer 108, the second guide layer 110, the second semiconductor layer 112, and the contact layer 114 are epitaxially grown in this order on the first guide layer 106. Examples of the epitaxial growth method include the MOCVD method and the MBE method.

[0068] Note that after forming a stacked body by epitaxially growing the first semiconductor layer 104, the first guide layer 106, the quantum well layer 108, the second guide layer 110, the second semiconductor layer 112, and the contact layer 114, the stacked body may be patterned into a predetermined shape so as to expose the upper surface of the substrate 16. Alternatively, the first semiconductor layer 104, the first guide layer 106, the quantum well layer 108, the second guide layer 110, the second semiconductor layer 112, and the contact layer 114 may be epitaxially grown using a mask layer (not shown) provided on the substrate 16 as a mask.

[0069] Next, a first electrode 116 is formed under the substrate 16. Next, a second electrode 118 is formed on the contact layer 114. The first electrode 116 and the second electrode 118 are formed by, for example, a vacuum deposition method or a sputtering method. The order in which the first electrode 116 and the second electrode 118 are formed is not particularly limited.

[0070] Next, the second electrode 118 is patterned to form the through-holes 119. The patterning is performed by, for example, photolithography and etching.

[0071] By the above steps, it is possible to form the light emitting element 14 having a plurality of lasers 18 using the common substrate 16. By repeating the above steps, it is possible to form a plurality of light emitting elements 14.

[0072] Next, the plurality of light emitting elements 14 are bonded to the support substrate 12. The bonding is performed, for example, by soldering (not shown).

[0073] Through the above steps, the processing head 10 can be manufactured.

[0074] 1.5. Effects In the laser processing apparatus 100, the first light emitting element 14a has a first substrate 16a having a longitudinal direction along a third direction L intersecting with the +Z-axis direction as the first direction and the +Y-axis direction as the second direction, and a plurality of first lasers 181 provided on the first substrate 16a and arranged along the third direction L. Each of the plurality of first lasers 181 has a quantum well layer 108 as a light emitting section that emits light when a current is injected. No current is injected into the quantum well layer 108 of the first end laser 18a1 located closest to the third direction L among the plurality of first lasers 181 and the quantum well layer 108 of the second end laser 18b2 located closest to the third direction L. A current is injected into the quantum well layer 108 of the first intermediate laser 18c1 located between the first end laser 18a1 and the second end laser 18b2 among the plurality of first lasers 181, and laser light is emitted.

[0075] Here, the first end laser 18a1 and the second end laser 18b2 are located closer to the periphery of the first substrate 16a than the first intermediate laser 18c1. In other words, as viewed from the Z-axis direction, the distance between the first end laser 18a1 and the center of the first substrate 16a and the distance between the second end laser 18b2 and the center of the first substrate 16a are greater than the distance between the first intermediate laser 18c1 and the center of the first substrate 16a. Therefore, in the end lasers 18a1 and 18b2, as described above, the diameter of the opening 107 is greater than the desired value. Therefore, when a current is injected into the quantum well layer 108 of the end lasers 18a1 and 18b2, the oscillation wavelength, oscillation threshold, light intensity, and the like are deviated from the desired values ​​in the end lasers 18a1 and 18b2.

[0076] As described above, in the laser processing apparatus 100, since no current is injected into the end lasers 18a1 and 18b2, the object can be processed without using the end lasers 18a1 and 18b2 whose oscillation wavelengths deviate from the predetermined values. Therefore, the laser processing apparatus 100 can improve processing accuracy. Furthermore, in the laser processing apparatus 100, the variation in the degree of melting of the metal particles G can be reduced. Furthermore, unlike the case where a fiber laser is used, the laser processing apparatus 100 does not need to provide a galvano scanner and an fθ lens, so that it is possible to reduce the size and cost accordingly.

[0077] In the laser processing apparatus 100, the third direction L is inclined with respect to the +Y-axis direction when viewed from the +Z-axis direction. Therefore, in the laser processing apparatus 100, the size of the first light-emitting element 14a in the +X-axis direction can be made smaller than when the third direction L is perpendicular to the +Y-axis direction.

[0078] In the laser processing apparatus 100, the second light emitting element 14b has a second substrate 16b separated from the first substrate 16a and having a longitudinal direction in the third direction L, and a plurality of second lasers 182 provided on the second substrate 16b and arranged along the third direction L. The second intermediate laser 18c2 among the plurality of second lasers 182 is located between the third end laser 18a3 located closest to the third direction L side among the plurality of second lasers 182, and the fourth end laser 18b4 located closest to the third direction L. When viewed from the +Y axis direction, the first end laser 18a1 overlaps with the second intermediate laser 18c2. Therefore, in the laser processing apparatus 100, the object to be processed can be processed by the second intermediate laser 18c2 instead of the first end laser 18a1.

[0079] In the laser processing apparatus 100, each of the multiple first lasers 181 is a surface emitting laser. Therefore, in the laser processing apparatus 100, the laser light can be emitted in the direction perpendicular to the first substrate 16a.

[0080] In laser processing apparatus 100, each of multiple first lasers 181 is a photonic crystal laser. Therefore, laser processing apparatus 100 can emit laser light with a narrow radiation angle.

[0081] 2. Modifications of the laser processing equipment 2.1. First variant Next, a laser processing apparatus according to a first modified example of this embodiment will be described with reference to the drawings. Fig. 10 is a cross-sectional view that shows a schematic diagram of a laser processing apparatus 200 according to a first modified example of this embodiment.

[0082] Hereinafter, in the laser processing apparatus 200 according to the first modification of this embodiment, the components having the same functions as those of the components of the laser processing apparatus 100 according to this embodiment described above are denoted by the same reference numerals, and detailed description thereof will be omitted. This is the same in the laser processing apparatus according to the second modification of this embodiment described later.

[0083] In the above-described laser processing apparatus 100, as shown in FIG. 4, the end lasers 18a, 18b and the intermediate laser 18c have the same configuration.

[0084] In contrast, in the laser processing apparatus 200, the end lasers 18a and 18b have a different configuration from the intermediate laser 18c, as shown in Fig. 10. The end lasers 18a and 18b have, for example, an insulating layer 202 and a shielding portion 204. The intermediate laser 18c does not have the insulating layer 202 or the shielding portion 204. In the laser processing apparatus 200, for example, a current is injected into the quantum well layers 108 of the end lasers 18a and 18b.

[0085] The insulating layer 202 is provided on the second electrode 118. The insulating layer 202 is provided in the through hole 119. The insulating layer 202 is, for example, a silicon oxide layer, a silicon nitride layer, or a silicon oxynitride layer. The insulating layer 202 is formed by, for example, a CVD (Chemical Vapor Deposition) method or a sputtering method.

[0086] The shielding portion 204 is provided on the insulating layer 202. The shielding portion 204 shields light generated in the quantum well layers 108 of the end lasers 18a and 18b when a current is injected into the quantum well layers 108 of the end lasers 18a and 18b. Therefore, the light generated in the quantum well layers 108 of the end lasers 18a and 18b is not emitted in the +Z-axis direction.

[0087] The shielding portion 204 may be a metal layer such as aluminum or copper. In this case, the shielding portion 204 reflects the light generated in the quantum well layer 108 of the end lasers 18a and 18b toward the substrate 16. The shielding portion 204 may be a light absorbing layer made of GaAs or GaN. In this case, the shielding portion 204 absorbs the light generated in the quantum well layer 108 of the end lasers 18a and 18b. The shielding portion 204 is formed by, for example, a CVD method, a sputtering method, a MOCVD method, or an MBE method.

[0088] In the laser processing apparatus 200, the first end laser 18a1 located closest to the third direction L among the multiple first lasers 181 has a quantum well layer 108 as a first light emitting unit and a shielding unit 204 as a first shielding unit that shields light generated in the quantum well layer 108. The second end laser 18b2 located closest to the third direction L among the multiple first lasers 181 has a quantum well layer 108 as a second light emitting unit and a shielding unit 204 as a second shielding unit that shields light generated in the quantum well layer 108. Of the multiple first lasers 181, a first intermediate laser 18c1 located between the first end laser 18a1 and the second end laser 18b2 emits laser light.

[0089] Therefore, in the laser processing device 200, since the end lasers 18a1, 18b2 do not emit laser light in the +Z axis direction, the object can be processed without using the end lasers 18a1, 18b2 whose oscillation wavelengths deviate from predetermined values. Therefore, in the laser processing device 200, the processing accuracy can be improved.

[0090] In the laser processing apparatus 200, the shielding portion 204 may be a metal layer. If the shielding portion 204 is a metal layer, the laser processing apparatus 200 can reflect the light generated in the quantum well layer .

[0091] In the laser processing apparatus 200, the shielding portion 204 may be a light absorbing layer. If the shielding portion 204 is a light absorbing layer, the laser processing apparatus 200 can absorb the light generated in the quantum well layer .

[0092] 2.2. Second variant Next, a laser processing apparatus according to a second modified example of this embodiment will be described with reference to the drawings. Fig. 11 is a plan view showing a schematic diagram of a laser processing apparatus 300 according to a second modified example of this embodiment.

[0093] In the above-described laser processing apparatus 100, as shown in FIG. 3, the center of the first end laser 18a1 overlaps with the center of the second intermediate laser 18c2 when viewed from the +Y-axis direction.

[0094] In contrast, in the laser processing device 300, as shown in FIG. 11, when viewed from the +Y axis direction, the center C of the first end laser 18a1 does not overlap with the center C of the second intermediate laser 18c2. When viewed from the +Y axis direction, the center C of the second end laser 18b2 does not overlap with the center C of the third intermediate laser 18c3. When viewed from the +Y axis direction, the center C of the laser 18 of the first light-emitting element 14a does not overlap with the center C of the laser 18 of the second light-emitting element 14b. When viewed from the +Y axis direction, the center C of the laser 18 of the first light-emitting element 14a is provided between the centers C of adjacent lasers 18 among the multiple lasers 18 of the second light-emitting element 14b. Therefore, the laser processing device 300 is capable of fine processing.

[0095] The laser processing device according to the present invention is not limited to a metal 3D printer. The laser processing device according to the present invention may be, for example, a laser cleaner that removes rust from metals using laser light. Furthermore, the laser processing device according to the present invention may be a laser annealing device that heats the surface of metals or resins using laser light.

[0096] The above-described embodiment and modifications are merely examples, and the present invention is not limited to these. For example, the embodiments and modifications can be appropriately combined.

[0097] The present invention includes configurations that are substantially the same as the configurations described in the embodiments, for example, configurations with the same functions, methods, and results, or configurations with the same purpose and effect. The present invention also includes configurations in which non-essential parts of the configurations described in the embodiments are replaced. The present invention also includes configurations that achieve the same effects as the configurations described in the embodiments, or configurations that can achieve the same purpose. The present invention also includes configurations in which publicly known technology is added to the configurations described in the embodiments.

[0098] The following can be derived from the above-described embodiment and modifications.

[0099] One embodiment of the laser processing apparatus is as follows: a processing head having a first light-emitting element that emits laser light in a first direction toward the object to be processed; a moving mechanism that changes a relative position between the processing head and the workpiece along a second direction intersecting the first direction; having The first light emitting element is a first substrate having a longitudinal direction along a third direction intersecting the first direction and the second direction; A plurality of first lasers provided on the first substrate and aligned along the third direction; having Each of the plurality of first lasers has a light emitting portion that emits light when a current is injected therein; A current is not injected into the light emitting portion of a first end laser located closest to the third direction among the plurality of first lasers and the light emitting portion of a second end laser located closest to the opposite side of the third direction, A current is injected into the light emitting portion of a first intermediate laser, which is located between the first end laser and the second end laser, among the plurality of first lasers, to emit the laser light.

[0100] This laser processing device can improve processing accuracy.

[0101] One embodiment of the laser processing apparatus is as follows: a processing head having a first light-emitting element that emits laser light in a first direction toward the object to be processed; a moving mechanism that changes a relative position between the processing head and the workpiece along a second direction intersecting the first direction; having The first light emitting element is a first substrate having a longitudinal direction along a third direction intersecting the first direction and the second direction; A plurality of first lasers provided on the first substrate and aligned along the third direction; having Among the plurality of first lasers, a first end laser located closest to the third direction side is A first light emitting unit; a first shielding portion that shields the light generated by the first light emitting portion; having Among the plurality of first lasers, a second end laser located on the opposite side to the third direction is A second light emitting unit; a second shielding portion that shields the light generated by the second light emitting portion; having The laser light is emitted from a first intermediate laser, which is located between the first end laser and the second end laser, among the plurality of first lasers.

[0102] This laser processing device can improve processing accuracy.

[0103] In one embodiment of the laser processing apparatus, When viewed from the first direction, the third direction may be inclined with respect to the second direction.

[0104] According to this laser processing device, the size of the first light emitting element in the direction perpendicular to the second direction can be reduced.

[0105] In one embodiment of the laser processing apparatus, The processing head has a second light-emitting element that emits laser light in the first direction toward the object to be processed, The second light emitting element is a second substrate spaced apart from the first substrate and having a longitudinal direction aligned with the third direction; A plurality of second lasers provided on the second substrate and aligned along the third direction; having A second intermediate laser among the plurality of second lasers is located between a third end laser located closest to the third direction and a fourth end laser located closest to the third direction, among the plurality of second lasers; When viewed in the second direction, the first end laser may overlap the second intermediate laser.

[0106] According to this laser processing apparatus, the workpiece can be processed by using the second intermediate laser instead of the first end laser.

[0107] In one embodiment of the laser processing apparatus, Each of the plurality of first lasers may be a surface emitting laser.

[0108] According to this laser processing device, the laser light can be emitted in the direction perpendicular to the first substrate.

[0109] In one embodiment of the laser processing apparatus, Each of the plurality of first lasers may be a photonic crystal laser.

[0110] This laser processing device can emit laser light with a narrow radiation angle.

[0111] In one embodiment of the laser processing apparatus, The first shielding portion and the second shielding portion may be metal layers.

[0112] According to this laser processing device, the light generated by the first light emitting section and the second light emitting section can be reflected.

[0113] In one embodiment of the laser processing apparatus, The first shielding portion and the second shielding portion may be light absorbing layers.

[0114] According to this laser processing device, the light generated by the first light emitting section and the second light emitting section can be absorbed. [Explanation of symbols]

[0115] 2...resist layer, 4...opening, 10...processing head, 12...support substrate, 14...light-emitting element, 14a...first light-emitting element, 14b...second light-emitting element, 14c...third light-emitting element, 16...substrate, 16a...first substrate, 16b...second substrate, 16c...third substrate, 18...laser, 18a, 18b...end laser, 18c...intermediate laser, 18a1...first end laser, 18b2...second end laser, 18a3...third end laser, 18b4...fourth end laser, 18a5...fifth end laser, 18b6...sixth end laser, 18c1...first intermediate laser, 18c2...second intermediate laser, 18c3...third intermediate laser, 20...moving mechanism, 30...condensing lens , 40...stage, 42...base, 44...elevator mechanism, 50...input buffer memory, 52...storage unit, 54...processing head position detection unit, 56...base position detection unit, 58...control unit, 100...laser processing device, 102...base, 104...first semiconductor layer, 106...first guide layer, 107...opening, 108...quantum well layer, 110...second guide layer, 112...second semiconductor layer, 114...contact layer, 116...first electrode, 118...second electrode, 119...through hole, 181...first laser, 182...second laser, 183...third laser, 200...laser processing device, 202...insulating layer, 204...shielding unit, 300...laser processing device

Claims

1. a processing head having a first light-emitting element that emits laser light in a first direction toward a processing object; a moving mechanism that changes a relative position between the processing head and the workpiece along a second direction intersecting the first direction; having The first light emitting element is a first substrate having a longitudinal direction along a third direction intersecting the first direction and the second direction; A plurality of first lasers provided on the first substrate and aligned along the third direction; having Each of the plurality of first lasers has a light emitting portion that emits light when a current is injected therein; A current is not injected into the light-emitting portion of a first end laser located closest to the third direction among the plurality of first lasers and the light-emitting portion of a second end laser located closest to the opposite side to the third direction, A laser processing apparatus in which a current is injected into the light emitting section of a first intermediate laser located between the first end laser and the second end laser among the plurality of first lasers, thereby emitting the laser light.

2. a processing head having a first light-emitting element that emits laser light in a first direction toward a processing object; a moving mechanism that changes a relative position between the processing head and the workpiece along a second direction intersecting the first direction; having The first light emitting element is a first substrate having a longitudinal direction along a third direction intersecting the first direction and the second direction; A plurality of first lasers provided on the first substrate and aligned along the third direction; having Among the plurality of first lasers, a first end laser located closest to the third direction side is A first light emitting unit; a first shielding portion that shields light generated by the first light emitting portion; having Among the plurality of first lasers, a second end laser located on the opposite side to the third direction is A second light emitting unit; a second shielding portion that shields the light generated by the second light emitting portion; having A laser processing apparatus in which the laser light is emitted from a first intermediate laser located between the first end laser and the second end laser among the plurality of first lasers.

3. In claim 1 or 2, A laser processing apparatus, wherein the third direction is inclined with respect to the second direction when viewed from the first direction.

4. In claim 1 or 2, The processing head has a second light-emitting element that emits laser light in the first direction toward the object to be processed, The second light emitting element is a second substrate spaced apart from the first substrate and having a longitudinal direction aligned with the third direction; A plurality of second lasers provided on the second substrate and aligned along the third direction; having A second intermediate laser among the plurality of second lasers is located between a third end laser located closest to the third direction and a fourth end laser located closest to the third direction, among the plurality of second lasers; A laser processing apparatus, wherein the first end laser overlaps with the second intermediate laser when viewed from the second direction.

5. In claim 1 or 2, A laser processing apparatus, wherein each of the plurality of first lasers is a surface emitting laser.

6. In claim 1 or 2, A laser processing apparatus, wherein each of the plurality of first lasers is a photonic crystal laser.

7. In claim 2, A laser processing apparatus, wherein the first shielding portion and the second shielding portion are metal layers.

8. In claim 2, A laser processing apparatus, wherein the first shielding portion and the second shielding portion are light absorbing layers.

Images