Substrate processing device

Abstract

To appropriately remove a metal film in a peripheral part of a substrate.SOLUTION: A substrate processing device 1 comprises: a substrate holding section which holds a disc-shaped substrate 9; an electrode unit 5 which is opposed to a target portion, which is a portion of a peripheral part 93 of the substrate 9, when performing etching and includes a first electrode 51 and a second electrode 52; a process liquid filling section 6 which discharges a process liquid from a discharge port 611, thereby forming a liquid filled state where gaps between the target portion, the first electrode 51 and the second electrode 52 are filled with the process liquid; a rotary mechanism which rotates the substrate 9 relatively to the electrode unit 5, thereby moving the target portion in the peripheral part 93 in a circumferential direction of the substrate 9; and a power source 50 which applies a voltage between the first electrode 51 and the second electrode 52. Thus, a metal film 96 in the peripheral part 93 of the substrate 9 can be appropriately removed.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus. [Background technology]

[0002] Conventionally, in the manufacturing process of semiconductor substrates (hereinafter simply referred to as "substrates"), various processes are performed on the substrate. For example, Patent Documents 1 and 2 disclose a method of etching a metal film by using a metal film on a substrate as an electrode and applying a voltage between the electrodes while filling the space between the metal film and another electrode with an electrolyte. In the substrate processing apparatus of Patent Documents 3 and 4, a processing liquid is discharged by a processing liquid supply unit to a plurality of different positions on a substrate on which a precious metal film is formed, and the precious metal film on the substrate is etched by contacting the anode with the processing liquid at one position and the cathode with the processing liquid at another position. In this way, when two different contact points are provided for the anode and the cathode, it is possible to improve the etching rate by passing a current between the contact points only to the precious metal film to be etched. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2002-353191 A [Patent Document 2] JP 2003-324091 A [Patent Document 3] Patent Publication No. 2021-158300 [Patent Document 4] Patent Publication No. 2023-8390 Summary of the Invention [Problem to be solved by the invention]

[0004] Incidentally, in the method of providing two different contacts for the anode and the cathode as in Patent Documents 3 and 4, an etching reaction occurs at the cathode contact of the two contacts. Therefore, when etching the metal film on the peripheral portion (bevel portion, etc.) while rotating the substrate, once the etching has progressed to a certain extent, the anode faces the area where the metal film has been removed, and the anode contact is no longer in contact with the metal film. As a result, no current flows between the anode and the cathode, etching does not progress, and the metal film on the peripheral portion cannot be properly removed.

[0005] The present invention has been made in consideration of the above-mentioned problems, and has an object to appropriately remove a metal film from the peripheral edge of a substrate. [Means for solving the problem]

[0006] A first aspect of the present invention is a substrate processing apparatus that performs etching on a peripheral portion of a substrate, comprising: a substrate holding section that holds a disk-shaped substrate; an electrode unit that faces a target portion that is part of the peripheral portion of the substrate during etching and has a first electrode and a second electrode; a processing liquid filling section that ejects processing liquid from an outlet to form a liquid filled state in which the processing liquid fills the space between the target portion, the first electrode and the second electrode; a rotation mechanism that rotates the substrate relative to the electrode unit to move the target portion on the peripheral portion in the circumferential direction of the substrate; and a power source that applies a voltage between the first electrode and the second electrode.

[0007] A second aspect of the present invention is the substrate processing apparatus of the first aspect, wherein the first electrode is located on one main surface side of the substrate, and the second electrode is located on the other main surface side of the substrate.

[0008] A third aspect of the present invention is the substrate processing apparatus of the second aspect, wherein the first electrode and the second electrode at least partially overlap when viewed along a direction perpendicular to the substrate.

[0009] A fourth aspect of the present invention is the substrate processing apparatus of the second aspect (which may be either the second or third aspect), wherein the first electrode has an opposing surface approximately parallel to the one main surface, the opposing surface of the first electrode facing the substrate on the one main surface side of the substrate, and the second electrode has an opposing surface approximately parallel to the other main surface, the opposing surface of the second electrode facing the substrate on the other main surface side of the substrate.

[0010] A fifth aspect of the present invention is a substrate processing apparatus of the fourth aspect, wherein the substrate is held in a horizontal position by the substrate holding portion, and the opposing surface of the second electrode located on the lower side of the substrate is larger than the opposing surface of the first electrode located on the upper side of the substrate.

[0011] A sixth aspect of the present invention is the substrate processing apparatus of the fifth aspect, wherein the second electrode is an anode.

[0012] A seventh aspect of the present invention is the substrate processing apparatus of aspect 4, wherein the electrode unit is positioned between the first electrode and the second electrode outside the peripheral portion of the substrate and has an insulating member to which the first electrode and the second electrode are fixed, and the processing liquid filling section supplies the processing liquid from the outlet to a space surrounded by the insulating member, the first electrode, and the second electrode.

[0013] Aspect 8 of the present invention is a substrate processing apparatus according to aspect 1 (which may be any one of aspects 1 to 3), wherein the substrate is held in a horizontal position by the substrate holding section, the processing liquid filling section is arranged on the upper side of the substrate and is provided with a nozzle having the outlet, the nozzle ejects the processing liquid from the outlet toward the target portion, the first electrode is arranged inside the nozzle, and the second electrode is arranged on the lower side of the substrate.

[0014] A ninth aspect of the present invention is the substrate processing apparatus according to any one of the first to eighth aspects, further comprising an electrode moving mechanism for moving the electrode unit in a radial direction of the substrate.

[0015] A tenth aspect of the present invention is a substrate processing apparatus according to the ninth aspect, wherein a member having the discharge outlet in the processing liquid filling section and the electrode unit are fixed to each other, and the electrode moving mechanism moves the member of the processing liquid filling section together with the electrode unit. Effect of the Invention

[0016] According to the present invention, the metal film on the peripheral edge of the substrate can be appropriately removed. [Brief description of the drawings]

[0017] [Figure 1] FIG. 1 is a diagram showing a layout of a substrate processing system. [Diagram 2] 1 is a diagram showing a configuration of a substrate processing apparatus according to a first embodiment. [Diagram 3] FIG. 4 is a cross-sectional view showing the vicinity of an electrode unit. [Figure 4A] 1 is a diagram showing a flow of substrate processing in a substrate processing apparatus; [Figure 4B] 1 is a diagram showing a flow of substrate processing in a substrate processing apparatus; [Diagram 5] FIG. 1 is a diagram showing a substrate processing apparatus according to a comparative example; [Figure 6] 11A and 11B are diagrams for explaining substrate processing in a substrate processing apparatus of a comparative example. [Figure 7] 11A and 11B are diagrams for explaining substrate processing in a substrate processing apparatus of a comparative example. [Figure 8] FIG. 13 is a diagram showing another example of the substrate processing apparatus. [Figure 9] FIG. 11 is a plan view showing another example of the electrode unit. [Figure 10] FIG. 11 is a cross-sectional view showing another example of the electrode unit. [Figure 11] 13 is a diagram showing an electrode unit and a treatment liquid nozzle according to a second embodiment. FIG. [Figure 12] FIG. 13 is a plan view showing a part of an electrode unit and a treatment liquid filling section according to a third embodiment. [Figure 13] FIG. 2 is a cross-sectional view showing an electrode unit and the like. [Figure 14] FIG. 11 is a cross-sectional view showing another example of the substrate processing apparatus. [Figure 15] FIG. 11 is a cross-sectional view showing another example of the electrode unit. [Figure 16] FIG. 11 is a plan view showing another example of the electrode unit. [Figure 17] FIG. 11 is a plan view showing another example of a rotation mechanism. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] 1 is a diagram showing the layout of a substrate processing system 10. The substrate processing system 10 is a system that processes a disk-shaped semiconductor substrate 9 (hereinafter simply referred to as "substrate 9"). The substrate processing system 10 includes an indexer block 101 and a processing block 102 coupled to the indexer block 101.

[0019] The indexer block 101 includes a carrier holding unit 104, an indexer robot 105, and an IR movement mechanism 106. The carrier holding unit 104 holds a plurality of carriers 107, each capable of accommodating a plurality of substrates 9. The plurality of carriers 107 (e.g., FOUPs) are held by the carrier holding unit 104 in a state arranged in a predetermined carrier arrangement direction. The IR movement mechanism 106 moves the indexer robot 105 in the carrier arrangement direction. The indexer robot 105 performs an unloading operation to unload the substrate 9 from the carrier 107, and a loading operation to load the substrate 9 into the carrier 107. The substrate 9 is transported in a horizontal position by the indexer robot 105.

[0020] The processing block 102 includes a plurality of (for example, four or more) processing units 108 that process the substrate 9, and a center robot 109. The processing units 108 are arranged to surround the center robot 109 in a plan view. The processing units 108 perform various processes on the substrate 9. A substrate processing apparatus described below is one of the processing units 108. The center robot 109 transfers the substrate 9 to and from the indexer robot 105. The center robot 109 also performs a loading operation to load the substrate 9 into the processing unit 108 and an unloading operation to unload the substrate 9 from the processing unit 108. The center robot 109 also transports the substrate 9 between the processing units 108. The substrate 9 is transported by the center robot 109 in a horizontal position.

[0021] Fig. 2 is a diagram showing the configuration of the substrate processing apparatus 1 according to the first embodiment. Fig. 2 shows a part of the configuration of the substrate processing apparatus 1 in a cross section taken along a plane including a predetermined central axis J1. The substrate processing apparatus 1 is a single-wafer type apparatus that processes substrates 9 one by one, and performs electrolytic etching on a peripheral portion 93 of the substrate 9. The peripheral portion 93 of the substrate 9 includes an apex, a bevel portion, and portions of an upper surface 91 and a lower surface 92 near the bevel portion, which will be described later.

[0022] The substrate processing apparatus 1 includes a spin chuck 2, a cleaning liquid supply unit 3, a cup unit 4, an electrode unit 5, a processing liquid filling unit 6, an electrode moving unit 7, a housing 11, and a control unit 19. The spin chuck 2, a part of the cleaning liquid supply unit 3, the cup unit 4, the electrode unit 5, a part of the processing liquid filling unit 6, and a part of the electrode moving unit 7 are accommodated in the internal space of the housing 11. An airflow forming unit 12 is provided in the canopy of the housing 11 to supply gas to the internal space and form an airflow (so-called downflow) flowing downward. For example, an FFU (fan filter unit) is used as the airflow forming unit 12. The control unit 19 is disposed outside the housing 11 and controls each component of the substrate processing apparatus 1. The control unit 19 is realized, for example, by a computer having a CPU, a memory, and the like executing a predetermined program. A part or all of the control unit 19 may be realized by a programmable logic controller (PLC) or the like.

[0023] The spin chuck 2 shown in FIG. 2 includes a chuck section 21 and a rotation mechanism 22. The chuck section 21 is a substrate holding section that is substantially disk-shaped and centered on a central axis J1 extending substantially parallel to the vertical direction, and holds the substrate 9 in a horizontal position from below. The chuck section 21 is, for example, a vacuum chuck, and contacts and adsorbs the center of the lower main surface 92 of the substrate 9. Typically, the diameter of the chuck section 21 is smaller than the diameter of the substrate 9. The center of the substrate 9 on the chuck section 21 approximately overlaps with the central axis J1. In the following description, in the substrate 9 held in a horizontal position by the chuck section 21, the lower main surface 92 is referred to as the "lower surface 92" and the upper main surface 91 is referred to as the "upper surface 91". The radial direction and the circumferential direction centered on the central axis J1 are simply referred to as the "radial direction" and the "circumferential direction". The radial direction is also the radial direction of the substrate 9, and the circumferential direction is also the circumferential direction of the substrate 9.

[0024] A metal film 96, which is a processing target in the substrate processing apparatus 1, is provided on the peripheral portion 93 of the substrate 9. The thickness of the metal film 96 is, for example, several tens of nm. The metal film 96 is provided on the entirety or part of the peripheral portion 93. The metal film 96 may be present at least on the peripheral portion 93, and may be present on the upper surface 91 or the lower surface 92 in an area inside the peripheral portion 93 in addition to the peripheral portion 93. The metal film 96 may extend over substantially the entire upper surface 91 or the lower surface 92 of the substrate 9. In FIG. 2, the metal film 96 is indicated by a thick line. The metal film 96 includes, for example, ruthenium (Ru). The metal film 96 may be a film including a ruthenium compound other than a film of simple ruthenium. The metal film 96 may also be a film including a metal other than ruthenium. In this embodiment, the metal film 96 includes ruthenium.

[0025] The rotation mechanism 22 is disposed below the chuck portion 21. The rotation mechanism 22 rotates the substrate 9 together with the chuck portion 21 about the central axis J1. The rotation mechanism 22 includes a shaft 221 and a motor 222. The shaft 221 is a substantially columnar or cylindrical member centered on the central axis J1. The shaft 221 extends in the vertical direction and is connected to the center of the lower surface of the chuck portion 21. The motor 222 is an electric rotary motor that rotates the shaft 221. The rotation mechanism 22 may be a motor having another structure (for example, a hollow motor, etc.).

[0026] The cleaning liquid supply unit 3 includes a cleaning liquid nozzle 31 and a cleaning liquid supply source 32. The cleaning liquid nozzle 31 is supported by a nozzle moving mechanism (not shown). The nozzle moving mechanism has, for example, a motor and a ball screw, and moves the cleaning liquid nozzle 31 approximately horizontally between a supply position above the substrate 9 and a retracted position radially outward from the substrate 9. The cleaning liquid nozzle 31 is connected to the cleaning liquid supply source 32 via a cleaning liquid line provided with a valve 321. The cleaning liquid supply source 32 supplies the cleaning liquid to the cleaning liquid nozzle 31. The cleaning liquid is, for example, pure water such as DIW (deionized water). The cleaning liquid may be an organic solvent such as IPA, or another type of liquid.

[0027] The cup section 4 includes a cup 41 and a cup lifting mechanism (not shown). The cup 41 is an annular member centered on a central axis J1. The cup 41 is disposed around the entire circumference of the substrate 9 and the chuck section 21 in the circumferential direction, and covers the sides and the bottom of the substrate 9 and the chuck section 21. The cup 41 is a liquid receiving container that receives liquid that splashes from the rotating substrate 9 toward the surroundings. The inner surface of the cup 41 is formed of, for example, a water-repellent material. The cup 41 remains stationary in the circumferential direction regardless of whether the substrate 9 is rotating or stationary. A liquid drainage port (not shown) is provided at the bottom of the cup 41 to drain the liquid received in the cup 41 to the outside of the housing 11.

[0028] The cup lifting mechanism moves the cup 41 in the vertical direction relative to the chuck unit 21. The cup lifting mechanism has, for example, a motor or an air cylinder as a drive source. The cup 41 can be moved in the vertical direction between a processing position around the substrate 9 shown in FIG. 2 and a retracted position below the processing position by the cup lifting mechanism. The cup unit 4 may include multiple cups 41 stacked in the radial direction. When the cup unit 4 includes multiple cups 41, each of the multiple cups 41 can move independently in the vertical direction, and the multiple cups 41 are switched to be used to receive the liquid according to the type of liquid splashed from the substrate 9.

[0029] The electrode unit 5 includes a first electrode 51 and a second electrode 52. Each of the first electrode 51 and the second electrode 52 is rod-shaped or cylindrical and extends in the vertical direction. The diameter of each of the electrodes 51, 52 is, for example, 2 mm or more and 20 mm or less, and preferably 4 mm or less. The material of each of the electrodes 51, 52 is, for example, platinum (Pt) or glassy carbon. The material of the electrodes 51, 52 may be other conductive materials that can be appropriately etched as described below.

[0030] As described later, the electrode unit 5 is supported by the electrode moving part 7, and is disposed at a processing position facing a part of the peripheral portion 93 when etching the peripheral portion 93 of the substrate 9. When the electrode unit 5 is disposed at the processing position, the first electrode 51 is disposed on the upper surface 91 side of the substrate 9, and the second electrode 52 is disposed on the lower surface 92 side of the substrate 9. In this embodiment, when viewed in the up-down direction, the first electrode 51 and the second electrode 52 have substantially the same size and are disposed at the same position. That is, when viewed in a plan view, substantially the entire first electrode 51 overlaps the entire second electrode 52. As described later, since etching of the metal film 96 is performed at a portion on the peripheral portion 93 facing the electrode unit 5, the portion is hereinafter referred to as a "target portion."

[0031] FIG. 3 is a cross-sectional view showing the vicinity of the electrode unit 5, and shows a cross section of the substrate 9, the first electrode 51, and the second electrode 52 in a plane including the central axis J1 and the centers of the first electrode 51 and the second electrode 52. When the electrode unit 5 is disposed at the processing position, the downwardly facing surface 511 of the first electrode 51 is approximately parallel to the upper surface 91 of the substrate 9, and the surface 511 faces the peripheral portion 93 on the upper surface 91 side of the substrate 9. In addition, the upwardly facing surface 521 of the second electrode 52 is approximately parallel to the lower surface 92 of the substrate 9, and the surface 521 faces the peripheral portion 93 on the lower surface 92 side of the substrate 9. In the following description, the surface 511 of the first electrode 51 and the surface 521 of the second electrode 52 are referred to as "opposing surfaces 511, 521". In the example of FIG. 3, both the opposing surfaces 511, 521 are circular. A power source 50 is electrically connected to the first electrode 51 and the second electrode 52. A predetermined voltage is applied between the first electrode 51 and the second electrode 52 when etching the peripheral edge portion 93.

[0032] As shown in FIG. 2, the processing liquid filling unit 6 includes a processing liquid nozzle 61, a processing liquid line 62, and a processing liquid supply source 63. The processing liquid nozzle 61 is supported by the electrode moving unit 7 together with the electrode unit 5. The processing liquid nozzle 61 is connected to the processing liquid supply source 63 via the processing liquid line 62. The processing liquid supply source 63 supplies the processing liquid to the processing liquid nozzle 61. A valve 621 is provided in the processing liquid line 62. As shown in FIG. 3, the processing liquid nozzle 61 is disposed radially inward from the first electrode 51 on the upper surface 91 side of the substrate 9. The processing liquid nozzle 61 is inclined in the up-down direction so that the lower end where the discharge port 611 is provided is positioned radially outward from the upper end. The discharge port 611 opens toward the gap between the first electrode 51 and the peripheral portion 93. When etching the peripheral portion 93, the processing liquid is discharged from the discharge port 611 toward the gap.

[0033] Typically, the treatment liquid is an electrolyte, for example, an aqueous solution containing hydrogen chloride (HCl) or ammonium chloride (NH4Cl) as a solute. The concentration of the solute is, for example, 5 wt% or more, and preferably 10 wt% or more. The upper limit of the concentration of the solute is not particularly limited, but is, for example, 25 wt%. The electrolyte may contain additives, etc.

[0034] As shown in FIG. 2, the electrode moving part 7 includes a support part 71, an arm part 72, and an electrode moving mechanism 73. The support part 71 supports the processing liquid nozzle 61, the first electrode 51, and the second electrode 52. The processing liquid nozzle 61 and the electrode unit 5 are indirectly fixed to each other by the support part 71. The arm part 72 is a member extending in the radial direction. The support part 71 is attached to one end of the arm part 72, and the other end is supported by the electrode moving mechanism 73. The electrode moving mechanism 73 has, for example, a motor and a ball screw, and can move the arm part 72 in the radial direction (the longitudinal direction of the arm part 72) and in the up-down direction. In other words, the electrode moving mechanism 73 moves the electrode unit 5 and the processing liquid nozzle 61 in the radial direction and the up-down direction. When etching the peripheral part 93, the electrode moving mechanism 73 positions the electrode unit 5 and the processing liquid nozzle 61 at a processing position facing a part of the peripheral part 93 of the substrate 9 (i.e., the target part). When etching is completed, the electrode unit 5 and the processing liquid nozzle 61 are disposed at a retreated position radially outward from the substrate 9. The electrode moving mechanism 73 may be realized by a linear motor or the like.

[0035] Next, a flow of processing the substrate 9 in the substrate processing apparatus 1 will be described with reference to FIGS. 4A and 4B. In processing the substrate 9, each component is controlled by the control unit 19 in FIG. 2. First, the substrate 9 provided with the metal film 96 is carried into the substrate processing apparatus 1 and placed on the chuck unit 21 (step S11). The substrate 9 is held by the chuck unit 21 by vacuum suction. At this time, the electrode unit 5 and the processing liquid nozzle 61 are positioned at retracted positions that do not hinder the carrying in and out of the substrate 9. The same is true for the cleaning liquid nozzle 31. After the substrate 9 is transported, a cleaning process (pre-cleaning) of the substrate 9 may be performed in the same manner as in step S20 described later.

[0036] When the substrate 9 is held, the electrode moving mechanism 73 moves the arm portion 72, so that the electrode unit 5 and the processing liquid nozzle 61 are disposed at the processing position. As a result, as shown in Fig. 3, the electrode unit 5 and the processing liquid nozzle 61 face a target portion of the peripheral portion 93 of the substrate 9 (step S12). At this time, the distance between the substrate 9 and each of the facing surface 511 of the first electrode 51 and the facing surface 521 of the second electrode 52 is adjusted in advance to be several mm or less. Thereafter, the rotation mechanism 22 starts to rotate the substrate 9 at a predetermined rotation speed (step S13).

[0037] Next, by opening the valve 621, the processing liquid is discharged from the discharge port 611 of the processing liquid nozzle 61 toward the gap between the first electrode 51 and the peripheral portion 93. The processing liquid enters the gap between the first electrode 51 and the peripheral portion 93 and fills the gap. A part of the processing liquid may flow radially outward around the gap. The processing liquid also flows around the lower surface 92 side of the peripheral portion 93, and fills the gap between the second electrode 52 and the peripheral portion 93 by capillary action. In this way, a liquid-filled state in which the processing liquid is filled between the target portion, the first electrode 51, and the second electrode 52 is formed (step S14). In the liquid-filled state, the processing liquid continues without interruption between the target portion, the first electrode 51, and the second electrode 52. In reality, the processing liquid slightly spreads radially inward from the gap between the electrodes 51, 52 and the substrate 9 on the upper surface 91 and the lower surface 92 of the substrate 9, respectively. As long as the liquid-filled state is maintained, the supply of the processing liquid from the processing liquid nozzle 61 to the peripheral portion 93 may be either continuous or intermittent.

[0038] Next, a predetermined voltage is applied between the first electrode 51 and the second electrode 52 by the power source 50. In the example of FIG. 3, a higher potential is applied to the second electrode 52 than to the first electrode 51, so that the first electrode 51 becomes a cathode and the second electrode 52 becomes an anode. By applying a voltage to the electrode unit 5, the metal film 96 is etched in the target portion of the peripheral portion 93 (step S15). In reality, the portion of the metal film 96 close to the cathode is preferentially etched. The reason why the metal film 96 is etched is not necessarily clear, but it is presumed that, for example, the following chemical reaction occurs between the first electrode 51 and the second electrode 52.

[0039] In the opposing surface 511 of the first electrode 51 (area A1 in FIG. 3 ), 2H + +2e - →H2···(1) A chemical reaction occurs, represented by

[0040] On the first electrode 51 side of the metal film 96 (region A2 in FIG. 3), Ru → Ru 3+ +3e - (2) 2Cl - →Cl2+2e - (3) 2H2O→O2+4H + +4e - (4) As a result, the metal film 96 dissolves in the processing liquid.

[0041] On the second electrode 52 side of the metal film 96 (region A3 in FIG. 3 ), 2H + +2e - →H2···(5) A chemical reaction occurs, represented by

[0042] In the opposing surface 521 of the second electrode 52 (area A4 in FIG. 3 ), 2Cl - →Cl2+2e - (6) 2H2O→O2+4H+ +4e - (7) In an experiment in which a processing solution was filled between the metal film and the first and second electrodes and a voltage was applied to the processing solution via the first and second electrodes, it was confirmed that the metal film was actually etched.

[0043] As described above, the substrate 9 rotates with respect to the electrode unit 5, and the target portion in the peripheral portion 93 moves in the circumferential direction relative to the substrate 9. As a result, the metal film 96 is etched over the entire circumference of the peripheral portion 93. An imaging unit (not shown) is provided above the peripheral portion 93 of the substrate 9, and an image of the peripheral portion 93 is acquired over the entire circumference. The image of the peripheral portion 93 is input to the control unit 19, and the state of the peripheral portion 93 is confirmed. Specifically, it is confirmed whether or not the metal film 96 has been removed over the entire peripheral portion 93. The presence or absence of the metal film 96 in the peripheral portion 93 can be acquired by a known inspection algorithm. The presence or absence of the metal film 96 may be confirmed by other methods. For example, the presence or absence of the metal film 96 may be detected by measuring the current flowing between the second electrode 52 and the first electrode 51.

[0044] When the metal film 96 remains on the peripheral portion 93 (step S16), etching is continued. When the metal film 96 is removed from the entire peripheral portion 93 (step S16), application of a voltage between the electrodes 51 and 52 and discharge of the processing liquid from the discharge port 611 of the processing liquid nozzle 61 are stopped (steps S17 and S18). Next, the electrode moving mechanism 73 moves the arm portion 72, so that the electrode unit 5 and the processing liquid nozzle 61 move away from the peripheral portion 93 to a retreated position (step S19). In addition, the cleaning liquid nozzle 31 is disposed at a supply position above the substrate 9. Then, the cleaning liquid is supplied from the cleaning liquid nozzle 31 toward the center of the upper surface 91 of the substrate 9. The cleaning liquid spreads over the entire upper surface 91 of the substrate 9, and a cleaning process is performed to wash away the processing liquid and the like adhering to the peripheral portion 93 of the substrate 9 (step S20). The cleaning liquid is scattered radially outward from the peripheral portion 93 of the substrate 9 by centrifugal force caused by the rotation of the substrate 9, and is collected by the cup 41. The cleaning liquid nozzle 31 may eject the cleaning liquid toward the peripheral portion 93. Another nozzle that ejects the cleaning liquid toward the lower surface 92 side of the peripheral portion 93 may also be provided.

[0045] When the cleaning process of the substrate 9 has been performed for a predetermined time, the supply of the cleaning liquid from the cleaning liquid nozzle 31 to the substrate 9 is stopped. Then, the rotation speed of the substrate 9 is increased, and the cleaning liquid on the substrate 9 is shaken off and removed. That is, the drying process of the substrate 9 is performed (step S21). When the drying process of the substrate 9 is completed, the rotation of the substrate 9 is stopped (step S22). Thereafter, the substrate 9 is unloaded from the substrate processing apparatus 1 (step S23). Through the above processes, the processing of the substrate 9 in the substrate processing apparatus 1 is completed.

[0046] As described above, the substrate processing apparatus 1 of FIG. 2 includes a substrate holding section (chuck section 21 in the above), an electrode unit 5, a processing liquid filling section 6, a rotating mechanism 22, and a power source 50. The substrate holding section holds a disk-shaped substrate 9. The electrode unit 5 faces a target portion, which is a part of a peripheral portion 93 of the substrate 9, when etching is performed, and has a first electrode 51 and a second electrode 52. The processing liquid filling section 6 discharges the processing liquid from the discharge port 611 to form a liquid-filled state in which the processing liquid is filled between the target portion, the first electrode 51, and the second electrode 52. The rotating mechanism 22 rotates the substrate 9 relative to the electrode unit 5, thereby moving the target portion on the peripheral portion 93 in the circumferential direction of the substrate 9. The power source 50 applies a voltage between the first electrode 51 and the second electrode 52. As a result, the substrate processing apparatus 1 can appropriately remove the metal film 96 on the peripheral portion 93 of the substrate 9.

[0047] Here, a substrate processing apparatus of a comparative example will be described. In the substrate processing apparatus 8 of the comparative example shown in FIG. 5, similarly to the apparatuses of JP 2021-158300 A and JP 2023-8390 A (Patent Documents 3 and 4 above), the first electrode 81 contacts the peripheral portion 93 of the substrate 9 through the processing liquid, and the second electrode 82 contacts the peripheral portion 93 of the substrate 9 through the processing liquid at a position different from the first electrode 81. That is, two different contact points are provided for the first electrode 81 and the second electrode 82. Here, the first electrode 81 is a cathode, and the second electrode 82 is an anode. In addition, the metal film 96 is provided circumferentially on the peripheral portion 93, and the metal film 96 does not exist inside the peripheral portion 93.

[0048] In the substrate processing apparatus 8 of the comparative example, the metal film 96 is etched in the vicinity of the first electrode 81. Therefore, when the metal film 96 is etched while rotating the substrate 9, as the etching progresses to a certain extent, the second electrode 82 faces the area where the metal film 96 has been removed, and the second electrode 82 is no longer electrically connected to the metal film 96, as shown in FIG. 6. As a result, no current flows between the first electrode 81 and the second electrode 82, and etching does not progress. Also, as shown in FIG. 7, when the metal film 96 is scattered in the peripheral portion 93, no current flows between the first electrode 81 and the second electrode 82, and etching cannot be performed.

[0049] In contrast, in the substrate processing apparatus 1 of FIG. 2, the processing liquid is filled between the target portion, the first electrode 51, and the second electrode 52, so that the first electrode 51 and the second electrode 52 are electrically connected to the metal film 96 of the target portion at substantially one contact point (through the same processing liquid). As a result, even if the metal film 96 is in an interrupted state as in FIG. 6, or an isolated metal film 96 is present as in FIG. 7, the metal film 96 can be appropriately removed. In addition, in the substrate processing apparatus 1 that supplies the processing liquid only to one point on the peripheral portion 93, the consumption of the processing liquid can be significantly reduced. Depending on the design of the substrate processing apparatus 1, in addition to the processing liquid nozzle 61, another processing liquid nozzle that supplies the processing liquid between the second electrode 52 and the substrate 9 may be provided to more reliably form the liquid-filled state.

[0050] Preferably, the first electrode 51 located on one main surface (upper surface 91 in the above) of the substrate 9 has an opposing surface 511 substantially parallel to the one main surface, and the opposing surface 511 faces the substrate 9 on the one main surface side of the substrate 9. The second electrode 52 located on the other main surface (lower surface 92 in the above) of the substrate 9 has an opposing surface 521 substantially parallel to the other main surface, and the opposing surface 521 faces the substrate 9 on the other main surface side of the substrate 9. In this way, the first electrode 51 and the second electrode 52 have opposing surfaces 511, 521 substantially parallel to the substrate 9, so that the opposing surfaces 511, 521 can be easily brought close to the substrate 9, and the reaction in the metal film 96 can be promoted to efficiently remove the metal film 96. In addition, the processing liquid can be easily held between the opposing surfaces 511, 521 and the substrate 9.

[0051] Preferably, the processing liquid nozzle 61 in the processing liquid filling section 6 and the electrode unit 5 are fixed to each other (relatively), and the electrode moving mechanism 73 moves the processing liquid nozzle 61 together with the electrode unit 5. This simplifies the configuration of the substrate processing apparatus 1 and reduces the manufacturing cost of the substrate processing apparatus 1, as compared with the case where a mechanism for moving the processing liquid nozzle 61 is separately provided. Depending on the design of the substrate processing apparatus 1, a mechanism for moving the processing liquid nozzle 61 may be separately provided, or the positions of the electrode unit 5 and the processing liquid nozzle 61 may be fixed within the housing 11, and the electrode moving mechanism 73 may be omitted.

[0052] Incidentally, in the etching of the metal film 96 in the peripheral portion 93, as described above, the portion of the metal film 96 closest to the cathode is preferentially removed. In other words, it takes a certain amount of time to remove the portion of the metal film 96 closest to the anode. Therefore, depending on the position where the metal film 96 is attached, it may take a long time to remove the entire metal film 96 in the peripheral portion 93.

[0053] Next, a preferred method for efficiently removing the entire metal film 96 from the peripheral portion 93 will be described. FIG. 8 is a diagram showing another example of the substrate processing apparatus 1. In the substrate processing apparatus 1 of FIG. 8, an auxiliary movement mechanism 711 that moves the processing liquid nozzle 61 and the first electrode 51 in a direction perpendicular to the substrate 9 (here, in the up-down direction) is provided in the support portion 71 of the electrode movement unit 7. The auxiliary movement mechanism 711 has, for example, a motor and a ball screw. The auxiliary movement mechanism 711 may be realized by a linear motor or the like.

[0054] In etching the metal film 96 in the peripheral portion 93, when a portion of the metal film 96 adjacent to the first electrode 51, which is the cathode, is removed (the portion is cross-hatched in FIG. 8), the first electrode 51 is moved slightly toward the substrate 9 by the auxiliary movement mechanism 711, as shown by the two-dot chain line in FIG. 8. This reduces the distance between the opposing surface 511 of the first electrode 51 and the metal film 96 remaining in the peripheral portion 93 (i.e., the metal film 96 excluding the cross-hatched portion), making it possible to shorten the time required to remove the entire metal film 96 in the peripheral portion 93.

[0055] At this time, the auxiliary movement mechanism 711 moves the processing liquid nozzle 61 together with the first electrode 51, so that the processing liquid can be supplied to an appropriate position between the first electrode 51 and the substrate 9 even in a state in which the first electrode 51 is brought close to the remaining metal film 96. Depending on the design of the substrate processing apparatus 1, the auxiliary movement mechanism 711 may move only the first electrode 51. The timing at which the auxiliary movement mechanism 711 brings the first electrode 51 close to the substrate 9 is determined based on, for example, an image of the peripheral portion 93 acquired by the imaging unit. The timing may be determined based on a current flowing between the second electrode 52 and the first electrode 51, or may be a predetermined time.

[0056] Also, instead of or together with the movement of the first electrode 51 by the auxiliary movement mechanism 711, the power source 50 may increase the voltage applied between the first electrode 51 and the second electrode 52. This can promote removal of the portion of the metal film 96 away from the first electrode 51. Furthermore, after the portion of the metal film 96 adjacent to the first electrode 51, which is the cathode, is removed, the power source 50 may invert the cathode and the anode (reverse the polarity of the first electrode 51 and the second electrode 52). This makes the first electrode 51 an anode and the second electrode 52 a cathode. As a result, etching of the portion of the metal film 96 adjacent to the second electrode 52, which is the cathode, is promoted, and it becomes possible to shorten the time required to remove the entire metal film 96 in the peripheral portion 93 (i.e., the etching time). The above-mentioned method of shortening the etching time may be adopted in other embodiments.

[0057] In the substrate processing apparatus 1, it is also possible to adjust the radial width of the metal film 96 to be removed in the peripheral portion 93. Specifically, the electrode moving mechanism 73 that moves the arm portion 72 can change the radial position of the electrode unit 5, and the control unit 19 accepts and sets the input of the radial position at which the electrode unit 5 should be disposed. When the electrode unit 5 is opposed to the target portion of the peripheral portion 93 in step S12 of FIG. 4A, the electrode unit 5 is disposed at the set radial position under the control of the control unit 19. In the etching of the metal film 96 in step S15, a portion of the metal film 96 that is approximately opposed to the opposing surface 511 of the first electrode 51 is removed. As described above, the processing liquid filled between the opposing surface 511 and the substrate 9 spreads slightly inward from the inner edge of the first electrode 51 in the radial direction due to surface tension, so that the portion of the metal film 96 that is slightly inward from the first electrode 51 is also etched.

[0058] As described above, the preferred substrate processing apparatus 1 includes the electrode movement mechanism 73 that moves the electrode unit 5 in the radial direction of the substrate 9. This makes it possible to adjust the radial position of the electrode unit 5 and adjust the etching width (removal width) of the metal film 96 in the radial direction. Furthermore, the electrode movement mechanism 73 moves the processing liquid nozzle 61 together with the electrode unit 5, so that the processing liquid can be supplied to an appropriate position between the first electrode 51 and the substrate 9 even after the electrode unit 5 is moved.

[0059] 9 and 10 are diagrams showing another example of the electrode unit 5. FIG. 9 is a plan view of the electrode unit 5, and FIG. 10 is a cross-sectional view of the electrode unit 5. In the electrode unit 5 of FIG. 9 and FIG. 10, the second electrode 52 located on the lower surface 92 side of the substrate 9 is a rectangular plate. The surface facing upward in the second electrode 52 is a facing surface 521 facing the substrate 9, and is approximately parallel to the lower surface 92 of the substrate 9. The facing surface 521 of the second electrode 52 is larger than the facing surface 511 of the first electrode 51. The area of ​​the facing surface 521 is, for example, two times or more, preferably three times or more, of the area of ​​the facing surface 511. There is no particular limit to the upper limit of the area of ​​the facing surface 521, but if the facing surface 521 is excessively large, the weight of the second electrode 52 increases, so the area of ​​the facing surface 521 is, for example, 10 times or less than the area of ​​the facing surface 511. When viewed from above, the entire first electrode 51 overlaps the entire second electrode 52.

[0060] As described above, the opposing surface 521 of the second electrode 52 located on the lower surface 92 side of the substrate 9 is larger than the opposing surface 511 of the first electrode 51 located on the upper surface 91 side of the substrate 9, so that the retention of the treatment liquid on the second electrode 52 can be improved. As a result, it is possible to easily maintain a liquid-filled state in which the treatment liquid is filled between the target portion of the peripheral portion 93, the first electrode 51, and the second electrode 52. In addition, since the opposing surface 521 of the second electrode 52, which is an anode, is large, the reduction reaction on the opposing surface 521 is promoted compared to the electrode unit 5 of FIG. 3. As a result, the oxidation reaction on the opposing surface 511 of the first electrode 51 is also promoted, and the etching rate of the metal film 96 is improved.

[0061] For example, in the substrate processing apparatus 1, when the substrate 9 is held with the surface on which the wiring pattern is formed facing downwards and the metal film 96 of the peripheral portion 93 is located on the lower surface 92 side, the first electrode 51 may be the anode and the second electrode 52 may be the cathode in the electrode unit 5 shown in Figures 9 and 10. In this case as well, it is possible to promote the oxidation reaction on the opposing surface 521 of the second electrode 52 and the reduction reaction on the opposing surface 511 of the first electrode 51.

[0062] FIG. 11 is a cross-sectional view showing the electrode unit 5a and the processing liquid nozzle 61 in the substrate processing apparatus 1 according to the second embodiment. In the substrate processing apparatus 1 in FIG. 11, the structures of the electrode unit 5a and the processing liquid nozzle 61 are different from those of the substrate processing apparatus 1 in FIG. 2, and the other configurations are the same as those in FIG. 2. The processing liquid nozzle 61 is a straight nozzle facing in the vertical direction, and is disposed above the peripheral portion 93 of the substrate 9 when disposed at the processing position. The processing liquid nozzle 61 is formed of an insulating material such as resin. The first electrode 51 of the electrode unit 5a is a film of a conductive material provided on the inner peripheral surface of the processing liquid nozzle 61. In other words, the processing liquid nozzle 61 is an electrode-embedded nozzle. As in the example of FIG. 10, the second electrode 52 is plate-shaped. A power source 50 is connected to the first electrode 51 and the second electrode 52.

[0063] In etching the metal film 96 on the peripheral portion 93 of the substrate 9, the processing liquid is continuously discharged from the discharge port 611 of the processing liquid nozzle 61. The processing liquid covers the metal film 96 on the target portion of the peripheral portion 93 and collides with the second electrode 52. In other words, a liquid column of the processing liquid formed downward from the discharge port 611 contacts both the target portion of the peripheral portion 93 and the second electrode 52. In reality, the processing liquid also flows around to the lower surface 92 side of the peripheral portion 93 and fills the gap between the second electrode 52 and the peripheral portion 93. In this way, a liquid-filled state in which the processing liquid is filled between the target portion, the first electrode 51, and the second electrode 52 is maintained. The power source 50 applies a voltage between the first electrode 51 and the second electrode 52, thereby etching the metal film 96.

[0064] As described above, in the substrate processing apparatus 1 of FIG. 11, the processing liquid filling unit 6 is disposed on the upper surface 91 side of the substrate 9, and includes the processing liquid nozzle 61 having the discharge port 611. The processing liquid nozzle 61 discharges the processing liquid from the discharge port 611 toward the target portion. The first electrode 51 is disposed inside the processing liquid nozzle 61, and the second electrode 52 is disposed on the lower surface 92 side of the substrate 9. In the substrate processing apparatus 1 of FIG. 11, the metal film 96 on the peripheral portion 93 of the substrate 9 can also be appropriately removed. In addition, the electrode moving mechanism 73 can adjust the radial positions of the processing liquid nozzle 61 and the electrode unit 5a, thereby adjusting the etching width of the metal film 96 in the radial direction. In the example of FIG. 11, the processing liquid nozzle 61 may be movable in the radial direction independently of the second electrode 52.

[0065] Figures 12 and 13 are views showing a part of the electrode unit 5b and the processing liquid filling section 6 in the substrate processing apparatus 1 according to the third embodiment. Figure 12 is a plan view of the electrode unit 5b etc., and Figure 13 is a cross-sectional view of the electrode unit 5b etc. In the substrate processing apparatus 1 of Figures 12 and 13, the structure of the electrode unit 5b and a part of the processing liquid filling section 6 differs from that of the substrate processing apparatus 1 of Figure 2, and the other configuration is similar to that of Figure 2.

[0066] The electrode unit 5b shown in FIG. 12 and FIG. 13 includes a rectangular plate-shaped first electrode 51 and a rectangular plate-shaped second electrode 52. When the electrode unit 5b is disposed at the processing position, the first electrode 51 is located on the upper surface 91 side of the substrate 9, and the second electrode 52 is located on the lower surface 92 side of the substrate 9. The surface of the first electrode 51 facing downward is a facing surface 511 facing the substrate 9, which is approximately parallel to the upper surface 91 of the substrate 9. The surface of the second electrode 52 facing upward is a facing surface 521 facing the substrate 9, which is approximately parallel to the lower surface 92 of the substrate 9. The facing surface 511 of the first electrode 51 and the facing surface 521 of the second electrode 52 are approximately parallel to each other. The distance between the first electrode 51 and the second electrode 52 is slightly larger than the thickness of the substrate 9.

[0067] The electrode unit 5b further includes an insulating member 53. The insulating member 53 is, for example, in the shape of a block made of resin, and is disposed between an outer end of the first electrode 51 and an outer end of the second electrode 52 in the radial direction. The first electrode 51 and the second electrode 52 are fixed to the insulating member 53. A through hole is provided in the first electrode 51 radially inward of the insulating member 53. A connection member 622 is provided in the processing liquid line 62 (see FIG. 2) of the processing liquid filling unit 6 at an end opposite to the processing liquid supply source 63, and the connection member 622 is inserted into and fixed to the through hole of the first electrode 51. The connection member 622 has a processing liquid discharge port 623, and the processing liquid is supplied from the discharge port 623 to a space 54 (hereinafter referred to as "processing space 54") surrounded by the insulating member 53, the first electrode 51, and the second electrode 52. In the substrate processing apparatus 1 of FIG. 13, the connection member 622, the first electrode 51, the insulating member 53 and the second electrode 52 are integrally configured as one member, and can be moved by the electrode moving mechanism 73.

[0068] When etching the peripheral portion 93 of the substrate 9, the electrode unit 5b and the connection member 622 are disposed at the processing position, so that the peripheral portion 93 is inserted into the processing space 54 from the radially inner side. The processing liquid is discharged from the discharge port 623 of the connection member 622, and the processing space 54 is filled with the processing liquid. That is, a liquid-filled state is formed in which the processing liquid is filled between the target portion of the peripheral portion 93, the first electrode 51, and the second electrode 52. Then, the power source 50 applies a voltage between the first electrode 51 and the second electrode 52, so that the metal film 96 is etched. Note that, as long as the liquid-filled state is maintained in the processing space 54, the discharge of the processing liquid from the discharge port 623 may be either continuous or intermittent.

[0069] 13, the electrode unit 5b is disposed between the first electrode 51 and the second electrode 52 outside the peripheral portion 93 of the substrate 9, and has the insulating member 53 to which the first electrode 51 and the second electrode 52 are fixed. The processing liquid filling section 6 supplies the processing liquid from the discharge port 623 to the processing space 54 surrounded by the insulating member 53, the first electrode 51, and the second electrode 52. This makes it possible to easily and reliably form a liquid-filled state, and to appropriately remove the metal film 96 on the peripheral portion 93.

[0070] Furthermore, a member (the connection member 622 in the above example) having the discharge port 623 in the processing liquid filling section 6 and the electrode unit 5b are fixed to each other, and the electrode movement mechanism 73 moves the member together with the electrode unit 5b. This allows the configuration of the substrate processing apparatus 1 to be simplified. Furthermore, the electrode movement mechanism 73 adjusts the radial position of the electrode unit 5b, thereby allowing the etching width of the metal film 96 in the radial direction to be adjusted.

[0071] The substrate processing apparatus 1 can be modified in various ways.

[0072] The substrate 9 does not necessarily need to be held in a horizontal position, and may be held in an upright position as shown in FIG. 14. In this case, the central axis J1 of the spin chuck 2 faces a substantially horizontal direction. In the example of FIG. 14, the first electrode 51 faces one main surface of the substrate 9 and has a facing surface 511 that is substantially parallel to the one main surface. The second electrode 52 faces the other main surface of the substrate 9 and has a facing surface 521 that is substantially parallel to the other main surface. This allows the peripheral portion 93 of the substrate 9 to be disposed between the first electrode 51 and the second electrode 52 while the facing surfaces 511 and 521 are brought close to the substrate 9, and the etching rate of the metal film 96 can be increased.

[0073] 15, the first electrode 51 may be located on one main surface side (e.g., the upper surface 91 side) of the substrate 9, and the second electrode 52 may be located on the radially outer side of the substrate 9. In the example of Fig. 15, the first electrode 51 and an insulating member 53 are provided on the one main surface side, and another insulating member 55 having a rectangular plate shape is located on the other main surface side of the substrate 9. The first electrode 51, the insulating member 53, the second electrode 52, and the insulating member 55 form a processing space 54.

[0074] 16, the first electrode 51, the insulating member 53, and the second electrode 52 may be arranged side by side in the circumferential direction on one main surface side (e.g., the upper surface 91 side) of the substrate 9. In the example of Fig. 16, the radial outer side of the peripheral portion 93 of the substrate 9 and the other main surface side are each covered with an insulating member, and the insulating members, the first electrode 51, the insulating member 53, and the second electrode 52 form a processing space 54. The discharge port 623 of the connection member 622 is provided in, for example, the insulating member on the other main surface side.

[0075] 15 and 16, the processing liquid is supplied from the discharge port 623 to the processing space 54, thereby filling the target portion of the peripheral portion 93 and the space between the first electrode 51 and the second electrode 52. Then, by applying a voltage between the first electrode 51 and the second electrode 52, the metal film 96 on the peripheral portion 93 can be removed.

[0076] On the other hand, in order to increase the etching rate of the metal film 96 of the peripheral portion 93, it is preferable that the first electrode 51 is located on one main surface side of the substrate 9 and the second electrode 52 is located on the other main surface side, as in the electrode units 5, 5a, 5b of FIG. 3, FIG. 8, FIG. 10, FIG. 11, FIG. 13, and FIG. 14. In this manner, by disposing the substrate 9 between the first electrode 51 and the second electrode 52, the metal film 96 can be efficiently removed. In the electrode units 5, 5a, 5b, the first electrode 51 overlaps with the second electrode 52 almost entirely when viewed along a direction perpendicular to the substrate 9, but the first electrode 51 and the second electrode 52 may only partially overlap. In the substrate processing apparatus 1, the first electrode 51 and the second electrode 52 at least partially overlap when viewed along a direction perpendicular to the substrate 9, thereby enabling the metal film 96 to be efficiently removed.

[0077] The substrate holder for holding the substrate 9 and the rotation mechanism for rotating the substrate 9 may have a structure other than the chuck 21 and the rotation mechanism 22 shown in FIG. 2. For example, as shown in FIG. 17, a plurality of rollers 223 may be arranged in the circumferential direction around the substrate 9, and the plurality of rollers 223 may contact the edge face or the like of the substrate 9 to hold the substrate 9, while some of the rollers 223 rotate on their own axes to rotate the substrate 9 about the central axis J1. Depending on the design of the substrate processing apparatus 1, the electrode units 5, 5a, 5b (and the processing liquid nozzle 61 or the connection member 622) may rotate about the central axis J1 without rotating the substrate 9. The rotation mechanism in the substrate processing apparatus 1 may rotate the substrate 9 relatively to the electrode units 5, 5a, 5b.

[0078] The substrates processed in the substrate processing apparatus 1 are not limited to semiconductor substrates, but may be glass substrates or other substrates.

[0079] The configurations in the above-described embodiment and each of the modified examples may be combined as appropriate as long as they are not mutually inconsistent. [Explanation of symbols]

[0080] 1. Substrate Processing Equipment 5,5a,5b Electrode unit 6 Processing liquid filling section 9 Substrate 21 Chuck part 22 Rotation mechanism 50 power supply 51 1st electrode 52 2nd electrode 53 Insulating materials 61 Processing liquid nozzle 73 Electrode movement mechanism 91 (Platform) Top 92 (Bottom of board) 93 (Circumference of the board) 96 Metal Film 511,521 (of electrodes) 611,623 Discharge port 622 Connection parts

Claims

1. A substrate processing apparatus that performs etching on a peripheral portion of a substrate, a substrate holder for holding a disk-shaped substrate; an electrode unit that faces a target portion that is a part of a peripheral portion of the substrate during etching and has a first electrode and a second electrode; a treatment liquid filling section that discharges a treatment liquid from a discharge port to form a liquid filled state in which the treatment liquid is filled between the target site, the first electrode, and the second electrode; a rotation mechanism that moves the target site in the peripheral portion in a circumferential direction of the substrate by rotating the substrate relative to the electrode unit; a power source that applies a voltage between the first electrode and the second electrode; A substrate processing apparatus comprising:

2. The substrate processing apparatus according to claim 1 , The substrate processing apparatus, wherein the first electrode is located on one main surface side of the substrate, and the second electrode is located on the other main surface side of the substrate.

3. The substrate processing apparatus according to claim 2, The substrate processing apparatus, wherein the first electrode and the second electrode at least partially overlap when viewed along a direction perpendicular to the substrate.

4. The substrate processing apparatus according to claim 2, the first electrode has an opposing surface substantially parallel to the one principal surface, the opposing surface of the first electrode facing the substrate on the one principal surface side of the substrate, the second electrode has a facing surface substantially parallel to the other main surface, the facing surface of the second electrode facing the substrate on the other main surface side of the substrate.

5. The substrate processing apparatus according to claim 4, The substrate is held in a horizontal position by the substrate holder, A substrate processing apparatus, wherein the opposing surface of the second electrode located on the lower surface side of the substrate is larger than the opposing surface of the first electrode located on the upper surface side of the substrate.

6. The substrate processing apparatus according to claim 5 , The substrate processing apparatus, wherein the second electrode is an anode.

7. The substrate processing apparatus according to claim 4, the electrode unit has an insulating member disposed between the first electrode and the second electrode outside the peripheral portion of the substrate, and to which the first electrode and the second electrode are fixed; The substrate processing apparatus, wherein the processing liquid filling section supplies the processing liquid from the discharge port to a space surrounded by the insulating member, the first electrode, and the second electrode.

8. The substrate processing apparatus according to claim 1 , The substrate is held in a horizontal position by the substrate holder, the processing liquid filling unit is disposed on the upper surface side of the substrate and includes a nozzle having the discharge port; The nozzle ejects the treatment liquid from the ejection port toward the target site, The substrate processing apparatus, wherein the first electrode is disposed inside the nozzle, and the second electrode is disposed on the lower surface side of the substrate.

9. 9. The substrate processing apparatus according to claim 1, The substrate processing apparatus further comprises an electrode moving mechanism for moving the electrode unit in a radial direction of the substrate.

10. The substrate processing apparatus according to claim 9, a member having the discharge port in the treatment liquid filling section and the electrode unit are fixed to each other, The electrode moving mechanism moves the member of the processing liquid filling section together with the electrode unit.

Images