Semiconductor light emitting device

Abstract

To allow a light receiving element to easily receive a portion of a laser beam from an edge surface light emitting element.SOLUTION: A semiconductor light emitting device 10 includes: a substrate 20 having a substrate surface 21; a first surface electrode 61S, a second surface electrode 62S, and a third surface electrode 63S formed on the substrate surface 21; an edge surface light emitting element 30 having a first light emitting surface 33A facing a direction crossing a vertical thickness direction with respect to the substrate surface 21, and a second light emitting surface 33B facing an opposite direction from the first light emitting surface 33A and electrically connected to the first surface electrode 61S; and a light receiving element 40 having a second element surface 41 including a light receiving region 49 and electrically connected to the second surface electrode 62S and the third surface electrode 63S in a state in which the second element surface 41 is arranged oppositely to the second surface light emitting surface 33B.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present disclosure relates to semiconductor light emitting devices. [Background technology]

[0002] BACKGROUND ART Conventionally, semiconductor light emitting devices that include a light emitting diode (LED) as a light source are known (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2013-41866

[0004] [overview] When LED elements are used, it is difficult to increase the output of the light source. Therefore, instead of LED elements, it is conceivable to use laser elements such as edge-emitting lasers (EELs) to increase the output.

[0005] In addition, semiconductor light-emitting devices are increasingly adopting a configuration that includes a light-receiving element that receives a portion of the light emitted from the LED element, and controls the intensity of the light emitted from the LED element based on the amount of light received by the light-receiving element.

[0006] When a laser element is used instead of an LED element in such a semiconductor light emitting device, it is difficult for the light receiving element to receive part of the laser light emitted from the laser element because the laser element has a narrower beam angle than the LED element.

[0007] One embodiment of the semiconductor light emitting device includes a substrate having a substrate surface, a first surface electrode, a second surface electrode, and a third surface electrode formed on the substrate surface, an edge light emitting element having a first light emitting surface facing a direction intersecting a thickness direction perpendicular to the substrate surface, and a second light emitting surface facing the opposite direction from the first light emitting surface, and electrically connected to the first surface electrode, and a light receiving element having a second element surface including a light receiving region, and electrically connected to the second surface electrode and the third surface electrode with the second element surface positioned opposite the second light emitting surface. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a schematic perspective view of a semiconductor light emitting device according to the first embodiment. [Figure 2] FIG. 2 is a schematic plan view of the semiconductor light emitting device of FIG. 1 with the sealing member removed. [Figure 3] FIG. 3 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line F3-F3 in FIG. [Figure 4] 4 is a cross-sectional view of the edge light emitting element of the semiconductor light emitting device taken along line F4-F4 in FIG. [Figure 5] FIG. 5 is a schematic side view of the edge light emitting device of FIG. [Figure 6] FIG. 6 is a schematic cross-sectional view of the semiconductor light emitting device of the second embodiment. [Figure 7] FIG. 7 is a schematic side view of the semiconductor light emitting device of FIG. [Figure 8] FIG. 8 is a schematic cross-sectional view of a semiconductor light emitting device according to the third embodiment. [Figure 9] FIG. 9 is a schematic cross-sectional view of a semiconductor light emitting device according to the fourth embodiment. [Figure 10] FIG. 10 is a schematic cross-sectional view of a semiconductor light emitting device according to the fifth embodiment. [Figure 11] FIG. 11 is a schematic cross-sectional view of a semiconductor light emitting device according to the sixth embodiment. [Figure 12] FIG. 12 is a schematic cross-sectional view of a semiconductor light emitting device according to the seventh embodiment. [Figure 13]FIG. 13 is a schematic cross-sectional view of a semiconductor light emitting device according to the eighth embodiment. [Figure 14] FIG. 14 is a schematic cross-sectional view of a semiconductor light emitting device according to a modified example. [Figure 15] FIG. 15 is a schematic cross-sectional view of a semiconductor light emitting device according to a modified example. [Figure 16] FIG. 16 is a schematic plan view of the semiconductor light emitting device of the modified example with the sealing member removed. [Figure 17] FIG. 17 is a schematic plan view of the semiconductor light emitting device of the modified example with the sealing member removed. [Figure 18] FIG. 18 is a schematic plan view of the semiconductor light emitting device of the modified example with the sealing member removed. [Figure 19] FIG. 19 is a schematic plan view of the semiconductor light emitting device of the modified example with the sealing member removed. [Figure 20] FIG. 20 is a schematic plan view of the semiconductor light emitting device of the modified example with the sealing member removed. [Figure 21] FIG. 21 is a schematic plan view of the semiconductor light emitting device of the modified example with the sealing member removed. [Figure 22] FIG. 22 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line F22-F22 in FIG.

[0009] [Detailed explanation] Hereinafter, several embodiments of semiconductor light emitting devices according to the present disclosure will be described with reference to the accompanying drawings. Note that for simplicity and clarity of description, components shown in the drawings are not necessarily drawn to scale. Also, hatching lines may be omitted in cross-sectional views to facilitate understanding. The accompanying drawings merely illustrate embodiments of the present disclosure and should not be considered to limit the present disclosure.

[0010] The following detailed description includes devices, systems, and methods embodying exemplary embodiments of the present disclosure. This detailed description is merely illustrative in nature and is not intended to limit the embodiments of the present disclosure or the application and uses of such embodiments.

[0011] First Embodiment A semiconductor light emitting device 10 according to a first embodiment will be described with reference to FIGS. FIG. 1 shows a schematic perspective structure of a semiconductor light emitting device 10. FIG. 2 is a schematic plan view showing the interior of the semiconductor light emitting device 10 by omitting a sealing member 50, which will be described later, from the semiconductor light emitting device 10. FIG. 3 shows a schematic cross-sectional structure of the semiconductor light emitting device 10 taken along line F3-F3 in FIG. 2. FIG. 4 shows a cross-sectional view of the semiconductor light emitting device 10 taken along line F4-F4 in FIG. 2. FIG. 5 is a schematic side view of the semiconductor light emitting device 10 as viewed from the X direction shown in FIG. 1.

[0012] The term "plan view" used in this disclosure refers to viewing the semiconductor light emitting device 10 in the Z direction of the mutually orthogonal X, Y and Z axes shown in FIG. 1, the semiconductor light emitting device 10 includes a substrate 20, an edge light emitting element 30 arranged on the substrate 20, a light receiving element 40 arranged on the substrate 20, and a sealing member 50 that seals at least a portion of the edge light emitting element 30 and at least a portion of the light receiving element 40. The sealing member 50 is an example of a cover member that seals or houses at least a portion of the light receiving element 40 and at least a portion of the edge light emitting element 30.

[0013] The substrate 20 is a component that supports the edge-emitting element 30 and the light-receiving element 40. The substrate 20 is formed in the shape of a rectangular flat plate with the thickness direction being the Z direction. In the following description, "plan view" is synonymous with "viewed from the thickness direction of the substrate."

[0014] As shown in Fig. 2, the substrate 20 is formed in a rectangular shape with the X direction as the longitudinal direction and the Y direction as the lateral direction in a plan view. As shown in Fig. 1, the substrate 20 has a substrate front surface 21, a substrate back surface 22 opposite the substrate front surface 21 in the Z direction, and first to fourth substrate side surfaces 23 to 26 (see Fig. 2) connecting the substrate front surface 21 and the substrate back surface 22. The first substrate side surface 23 and the second substrate side surface 24 constitute both end surfaces of the substrate 20 in the X direction, and the third substrate side surface 25 and the fourth substrate side surface 26 constitute both end surfaces of the substrate 20 in the Y direction. The shape of the substrate 20 in a plan view can be changed as desired.

[0015] The substrate 20 is formed of, for example, an insulating material. The insulating material may be formed of, for example, a material containing epoxy resin. As an example, the substrate 20 may be formed of glass epoxy resin. The insulating material may also be formed of, for example, a material containing ceramic. Examples of materials containing ceramic include aluminum nitride (AlN) and alumina (Al2O3). When the substrate 20 is formed of a material containing ceramic, the heat dissipation performance of the substrate 20 is improved, and the temperature of the semiconductor light emitting device 10 can be prevented from becoming excessively high.

[0016] The edge light emitting element 30 and the light receiving element 40 are arranged spaced apart from each other in the X direction. In one example, the light receiving element 40 is arranged at a position overlapping the edge light emitting element 30 when viewed from the X direction. The light receiving element 40 is arranged closer to the first substrate side surface 23 than the edge light emitting element 30.

[0017] The edge light emitting element 30 is a laser diode that emits laser light in a predetermined wavelength band, and functions as a light source for the semiconductor light emitting device 10. For example, an edge emitting laser (EEL) is used as the edge light emitting element 30. This laser light may be visible light, or may be laser light with a wavelength longer than that of visible light, such as ultraviolet light.

[0018] The edge light emitting element 30 is formed in a rectangular parallelepiped shape. In one example, as shown in Fig. 2, the edge light emitting element 30 is formed in a rectangular shape with the X direction as the longitudinal direction and the Y direction as the lateral direction in a plan view. The shape of the edge light emitting element 30 in a plan view can be changed as desired. In one example, the shape of the edge light emitting element 30 in a plan view may be a square.

[0019] As shown in FIGS. 1 and 3, the edge light emitting element 30 has a first element front surface 31 and a first element back surface 32 facing opposite to each other in the Z direction, and four element side surfaces connecting the first element front surface 31 and the first element back surface 32. Of the four element side surfaces, the element side surfaces that form both end surfaces in the X direction form a first light emitting surface 33A and a second light emitting surface 33B. As shown in FIG. 3, both the first light emitting surface 33A and the second light emitting surface 33B are formed by flat surfaces that are perpendicular to the first element front surface 31 (first element back surface 32). The first light emitting surface 33A and the second light emitting surface 33B face opposite to each other. The first light emitting surface 33A is configured to emit a first laser light in the X direction, which is an example of a first direction (X direction) that intersects with the Z direction in a plan view. A detailed configuration of the light emitting structure of the edge light emitting element 30 will be described later.

[0020] As shown in FIG. 1, the light-receiving element 40 is formed in the shape of a rectangular flat plate with its thickness direction aligned in the X direction. As shown in FIGS. 1 and 2, the light-receiving element 40 includes a second element front surface 41 and a second element back surface 42 facing opposite each other in the thickness direction (X direction), and first to fourth element side surfaces 43 to 46 connecting the second element front surface 41 and the second element back surface 42. The first element side surface 43 and the second element side surface 44 form both end surfaces of the light-receiving element 40 in the Z direction, and the third element side surface 45 and the fourth element side surface 46 form both end surfaces of the light-receiving element 40 in the Y direction. The second element front surface 41 faces the same side as the second substrate side surface 24, and the second element back surface 42 faces the same side as the first substrate side surface 23. The first element side surface 43 faces the same side as the substrate front surface 21, and the second element side surface 44 faces the same side as the substrate back surface 22. The third element side surface 45 faces the same side as the third substrate side surface 25, and the fourth element side surface 46 faces the same side as the fourth substrate side surface 26.

[0021] The light-receiving element 40 is, for example, a photodiode. The light-receiving element 40 further includes a first light-receiving electrode 47A and a second light-receiving electrode 47B. As shown in FIGS. 2 and 3, the first light-receiving electrode 47A is formed on the second element front surface 41. The second light-receiving electrode 47B is formed on the second element rear surface 42. The first light-receiving electrode 47A constitutes one of the anode and cathode of the photodiode, and the second light-receiving electrode 47B constitutes the other of the anode and cathode of the photodiode. In the first embodiment, the first light-receiving electrode 47A constitutes the anode, and the second light-receiving electrode 47B constitutes the cathode.

[0022] The light-receiving element 40 is formed on the substrate surface 21 closer to the substrate side surface 23 than the center of the substrate surface 21 in the X direction in a plan view. The light-receiving element 40 includes a light-receiving region 49. The light-receiving region 49 is formed on the second element surface 41. The formation area of ​​the light-receiving region 49 is defined, for example, by a p-type well region formed in an n-type semiconductor substrate provided on the light-receiving element 40. In other words, the light-receiving element 40 is configured so that when light is irradiated onto the light-receiving region 49, a current flows from the first light-receiving electrode 47A to the second light-receiving electrode 47B of the light-receiving element 40.

[0023] The edge-emitting element 30 includes a first light-emitting electrode 34 formed on the first element front surface 31 and a second light-emitting electrode 35 formed on the first element rear surface 32. As shown in FIG. 2, the first light-emitting electrode 34 is formed at approximately the center of the first element front surface 31 in the Y direction in a plan view. The first light-emitting electrode 34 has a rectangular shape in a plan view, with the X direction as the longitudinal direction and the Y direction as the lateral direction. As shown in FIG. 3, the second light-emitting electrode 35 is formed, for example, with the same length in the X direction as the first element rear surface 32. Furthermore, as shown in FIGS. 4 and 5, in one example, the dimension of the second light-emitting electrode 35 in the Y direction is smaller than the dimension of the first element rear surface 32 in the Y direction. In one example, the first light-emitting electrode 34 forms an anode, and the second light-emitting electrode 35 forms a cathode.

[0024] The edge light emitting element 30 is formed in the shape of a rectangular flat plate with the thickness direction in the Z direction. In plan view, the shape of the edge light emitting element 30 is a rectangle with the longitudinal direction in the X direction and the lateral direction in the Y direction. In the example shown in Fig. 2, the first light emitting electrode 34 is formed so as to be slightly smaller than the edge light emitting element 30 in plan view. The first light emitting electrode 34 may be formed of a stacked structure of multiple electrode films.

[0025] As shown in FIG. 1 , the sealing member 50 is provided on the substrate 20. The sealing member 50 is made of a material that is transmissive to the first laser light and the second laser light of the edge-emitting element 30. The sealing member 50 is made of a material that includes at least one of a silicone resin, an epoxy resin, and an acrylic resin, for example. In one example, the sealing member 50 is made of a silicone resin. In the first embodiment, the sealing member 50 seals the entire light-receiving element 40 and the entire edge-emitting element 30.

[0026] The sealing member 50 has a thickness direction in the Z direction and is formed in a substantially rectangular flat plate shape. The sealing member 50 has a sealing surface 51 facing the same side as the substrate surface 21, and first to fourth sealing side surfaces 53 to 56 intersecting with the sealing surface 51.

[0027] The sealing surface 51 is a flat surface perpendicular to the thickness direction (Z direction) of the substrate 20. Therefore, "plan view" can be rephrased as "viewed from a direction perpendicular to the sealing surface 51." The first to fourth sealing side surfaces 53 to 56 are, for example, perpendicular to the sealing surface 51. The first sealing side surface 53 and the second sealing side surface 54 constitute both end surfaces of the sealing member 50 in the X direction, and the third sealing side surface 55 and the fourth sealing side surface 56 constitute both end surfaces of the sealing member 50 in the Y direction. The first sealing side surface 53 faces the same side as the first substrate side surface 23, and the second sealing side surface 54 faces the same side as the second substrate side surface 24. The third sealing side surface 55 faces the same side as the third substrate side surface 25, and the fourth sealing side surface 56 faces the same side as the fourth substrate side surface 26. In one example, the first sealing side surface 53 and the first substrate side surface 23 are formed to be flush with each other, and the second sealing side surface 54 and the second substrate side surface 24 are formed to be flush with each other. The third sealing side surface 55 and the third substrate side surface 25 are formed to be flush with each other, and the fourth sealing side surface 56 and the fourth substrate side surface 26 are formed to be flush with each other.

[0028] The first light-emitting surface 33A is configured to emit the first laser light toward the second sealing side surface 54 of the sealing member 50. The first laser light of the edge-emitting element 30 passes through the second sealing side surface 54 and is emitted to the outside of the semiconductor light-emitting device 10. The second light-emitting surface 33B is configured to emit the second laser light in a direction opposite to the emission direction of the first laser light in a plan view. In other words, the second light-emitting surface 33B is configured to emit the second laser light toward the side opposite to the second sealing side surface 54 of the sealing member 50, in other words, toward the side where the first sealing side surface 53 is located.

[0029] [Electrical connection configuration of semiconductor light-emitting device] 2 and 3, the semiconductor light emitting device 10 includes a first front surface electrode 61S, a second front surface electrode 62S, a third front surface electrode 63S, and a fourth front surface electrode 64S provided on the substrate front surface 21, a first back surface electrode 61R, a second back surface electrode 62R, a third back surface electrode 63R, and a fourth back surface electrode 64R provided on the substrate back surface 22, and a first via 65, a second via 66, a third via 67, and a fourth via (not shown) provided in the substrate 20. The first to fourth front surface electrodes 61S to 64S, the first to fourth back surface electrodes 61R to 64R, the first to third vias 65 to 67, and the fourth via are formed of a material containing one or more appropriately selected from the group consisting of Ti (titanium), TiN (titanium nitride), Au (gold), Ag (silver), Cu (copper), Al (aluminum), and W (tungsten).

[0030] 2, the first surface electrode 61S is disposed closer to the second substrate side surface 24 than the center of the substrate surface 21 in the X direction in a plan view. In the example of FIG. 2, the first surface electrode 61S is formed in a rectangular shape with the X direction as the longitudinal direction and the Y direction as the lateral direction in a plan view. Note that the position and shape of the first surface electrode 61S relative to the substrate surface 21 can be changed as desired.

[0031] The second surface electrode 62S and the third surface electrode 63S are arranged at a distance from the first surface electrode 61S. The second surface electrode 62S and the third surface electrode 63S are arranged closer to the first substrate side surface 23 in the X direction than the first surface electrode 61S. The third surface electrode 63S and the second surface electrode 62S are arranged at a distance from each other. The third surface electrode 63S is arranged closer to the first substrate side surface 23 in the X direction than the second surface electrode 62S. In one example, the third surface electrode 63S is arranged at a position adjacent to the first substrate side surface 23 in the X direction in a plan view. In other words, the second surface electrode 62S is arranged between the first surface electrode 61S and the third surface electrode 63S in the X direction. In one example, the second surface electrode 62S is arranged closer to the third surface electrode 63S than the first surface electrode 61S.

[0032] The second surface electrode 62S is formed in a rectangular shape with its longitudinal direction in the Y direction and its lateral direction in the X direction in a plan view. The second surface electrode 62S is disposed apart from the first surface electrode 61S in the X direction. The third surface electrode 63S is formed in a rectangular shape with its longitudinal direction in the Y direction and its lateral direction in the X direction in a plan view. In one example, the third surface electrode 63S has the same size and shape as the second surface electrode 62S. Note that the shapes and sizes of the second surface electrode 62S and the third surface electrode 63S in a plan view can be changed as desired.

[0033] The fourth surface electrode 64S is arranged closer to the second substrate side surface 24 in the X direction than the second surface electrode 62S and the third surface electrode 63S. The fourth surface electrode 64S is arranged at a position overlapping with the first surface electrode 61S when viewed from the Y direction. The fourth surface electrode 64S is arranged closer to the third substrate side surface 25 than the first surface electrode 61S. The fourth surface electrode 64S is formed in a rectangular shape with the X direction as the longitudinal direction and the Y direction as the lateral direction in a plan view. The arrangement of the first to fourth surface electrodes 61S to 64S can be changed as desired.

[0034] The edge light emitting element 30 is disposed on the first surface electrode 61S such that the second light emitting electrode 35 faces the first surface electrode 61S. More specifically, as shown in FIG. 3, the edge light emitting element 30 is bonded to the first surface electrode 61S by a conductive bonding material SD. This electrically connects the second light emitting electrode 35 to the first surface electrode 61S. In this manner, the edge light emitting element 30 is electrically connected to the first surface electrode 61S. As the conductive bonding material SD, for example, solder paste, silver paste, gold paste, copper paste, etc. may be used.

[0035] As shown in FIG. 2, a wire W is connected to the first light-emitting electrode 34 of the edge-emitting element 30. The wire W is connected to the fourth surface electrode 64S. As a result, the first light-emitting electrode 34 of the edge-emitting element 30, the first surface electrode 61S, and the fourth surface electrode 64S are electrically connected via the wire W. In the example shown in FIG. 2, the wire W is formed to extend in the Y direction in a plan view. In the first embodiment, the wire W is sealed with a sealing member 50. The wire W is a bonding wire formed by, for example, a wire bonding apparatus, and is made of a conductive material such as Au, Al, or Cu.

[0036] The light-receiving element 40 is disposed on the second surface electrode 62S and the third surface electrode 63S such that the first light-receiving electrode 47A faces the second surface electrode 62S in the Z direction and the second light-receiving electrode 47B faces the third surface electrode 63S in the Z direction. More specifically, as shown in Fig. 3, the first light-receiving electrode 47A is bonded to the second surface electrode 62S and the second light-receiving electrode 47B is bonded to the third surface electrode 63S by a conductive bonding material SD. As a result, the first light-receiving electrode 47A is electrically connected to the second surface electrode 62S and the second light-receiving electrode 47B is electrically connected to the third surface electrode 63S.

[0037] 3, the first back surface electrode 61R is formed on one of both end portions in the X direction of the substrate back surface 22, which is closer to the second substrate side surface 24. In a plan view, the first back surface electrode 61R includes a portion overlapping with the first front surface electrode 61S.

[0038] The second back surface electrode 62R is disposed on the substrate back surface 22, spaced apart from the first back surface electrode 61R in the X direction. In plan view, the second back surface electrode 62R includes a portion overlapping with the second front surface electrode 62S.

[0039] The third back surface electrode 63R is arranged to be separated in the X direction from both the first back surface electrode 61R and the second back surface electrode 62R in a plan view. In one example, the third back surface electrode 63R is arranged at a position adjacent to the first substrate side surface 23 in the X direction in a plan view. In a plan view, the third back surface electrode 63R includes a portion overlapping with the third surface electrode 63S.

[0040] The fourth back surface electrode 64R is disposed apart from the first to third back surface electrodes 61R to 63R in plan view. In plan view, the fourth back surface electrode 64R includes a portion overlapping with the fourth front surface electrode 64S (see FIG. 2).

[0041] The first via 65 electrically connects the first front surface electrode 61S and the first back surface electrode 61R. The second via 66 electrically connects the second front surface electrode 62S and the second back surface electrode 62R. The third via 67 electrically connects the third front surface electrode 63S and the third back surface electrode 63R. The fourth via electrically connects the fourth front surface electrode 64S and the fourth back surface electrode 64R. Each of the first via 65, the second via 66, the third via 67, and the fourth via penetrates the substrate 20 in the Z direction. Note that a plurality of each of the first via 65, the second via 66, the third via 67, and the fourth via may be provided.

[0042] The first back surface electrode 61R is electrically connected to the second light-emitting electrode 35 of the edge-emitting element 30 via the first surface electrode 61S and the first via 65. The second back surface electrode 62R is electrically connected to the first light-receiving electrode 47A of the light-receiving element 40 via the second surface electrode 62S and the second via 66. The third back surface electrode 63R is electrically connected to the second light-receiving electrode 47B of the light-receiving element 40 via the third surface electrode 63S and the third via 67. The fourth back surface electrode 64R is electrically connected to the first light-emitting electrode 34 of the edge-emitting element 30 via the fourth surface electrode 64S, the fourth via, and the wire W. In this manner, the semiconductor light-emitting device 10 is configured as a surface-mounted package structure.

[0043] The semiconductor light-emitting device 10 can use so-called APC (Auto Power Control) driving, which controls the current supplied to the edge light-emitting element 30 so that the optical outputs of the first laser light and the second laser light from the edge light-emitting element 30 are constant. More specifically, a control device provided outside the semiconductor light-emitting device 10 and controlling the current supplied to the edge light-emitting element 30 receives a signal corresponding to the second laser light received by the light-receiving element 40. In one example, the signal from the light-receiving element 40 is output to the control device via the third back surface electrode 63R. The control device receives the signal from the light-receiving element 40 by being electrically connected to the third back surface electrode 63R. The control device then controls the current supplied to the edge light-emitting element 30 according to the difference between the received signal and an output setting value corresponding to a preset optical output. In one example, the control device controls the current supplied to the edge light-emitting element 30 so that the level of the received signal matches the output setting value.

[0044] [Internal structure of edge-emitting element] The internal structure of the edge light emitting element 30 will be described with reference to FIGS. Fig. 4 is a cross-sectional view of the semiconductor light-emitting device 10 taken along line F4-F4 in Fig. 2, showing the internal configuration of the edge light-emitting element 30. Fig. 5 is a schematic side view of the semiconductor light-emitting device 10 of Fig. 2 as viewed from the X direction.

[0045] In the example shown in FIGS. 3 and 4, the second light-emitting electrode 35 is formed to have the same length as the edge light-emitting element 30 in the X direction and to be shorter than the edge light-emitting element 30 in the Y direction.

[0046] 4, the edge light emitting device 30 includes a semiconductor substrate 37 and a semiconductor layer 80 provided on the semiconductor substrate 37. The semiconductor substrate 37 is formed in the shape of a rectangular flat plate with its thickness direction in the Z direction. The semiconductor substrate 37 is formed in a rectangular shape with its longitudinal direction in the X direction and its lateral direction in the Y direction in a plan view (see FIG. 2).

[0047] In Figure 4, in order to show each component of the semiconductor layer 80, the overall thickness of the semiconductor layer 80 is shown to be approximately the same as the thickness of the semiconductor substrate 37, but in reality the thickness of the semiconductor layer 80 is thinner than the thickness of the semiconductor substrate 37.

[0048] The semiconductor substrate 37 is made of an n-type semiconductor substrate (n-GaAs substrate) containing, for example, GaAs (gallium arsenide). The semiconductor substrate 37 contains at least one pentavalent element as an n-type impurity. The semiconductor layer 80 is made of an n-type semiconductor substrate (n-GaAs substrate) containing, for example, GaAs (gallium arsenide).

[0049] The semiconductor substrate 37 has a substrate front surface 38A and a substrate back surface 38B, and the semiconductor layer 80 is formed on the substrate front surface 38A. The semiconductor layer 80 has a surface 81 that constitutes the first element surface 31. The semiconductor layer 80 is epitaxially grown on the semiconductor substrate 37. The semiconductor layer 80 has a layered structure in which a plurality of semiconductor layers are stacked in the Z direction.

[0050] As shown in FIG. 4, the semiconductor layer 80 includes an active layer 82, an n-side guide layer 83, a p-side guide layer 84, an n-type semiconductor layer 85, and a p-type semiconductor layer 86 as a plurality of semiconductor layers. A double heterojunction is formed by disposing the n-side guide layer 83 between the n-type semiconductor layer 85 and the active layer 82, and disposing the p-side guide layer 84 between the active layer 82 and the p-type semiconductor layer 86. Electrons are injected into the active layer 82 from the n-type semiconductor layer 85 via the n-side guide layer 83, and holes are injected from the p-type semiconductor layer 86 via the p-side guide layer 84. These electrons and holes recombine in the active layer 82, causing the active layer 82 to generate laser light.

[0051] The laser light generated by the active layer 82 is emitted from the first light-emitting surface 33A and the second light-emitting surface 33B. The edge light emitting element 30 is configured so that the laser light generated by the active layer 82 is emitted from the first light-emitting surface 33A and the second light-emitting surface 33B. The first light-emitting surface 33A and the second light-emitting surface 33B comprise an emission region 36 from which the laser light is emitted. The emission region 36 is formed according to the semiconductor layer 80, and is therefore positioned closer to the first element surface 31 than the center of the edge light emitting element 30 in the Z direction, as shown in FIG. 5 . The dimension of the emission region 36 in the Y direction is smaller than the dimension of the second light-emitting surface 33B in the Y direction.

[0052] The n-type semiconductor layer 85 includes an n-type cladding layer 85A formed on the semiconductor substrate 37. The n-type cladding layer 85A is disposed on the semiconductor substrate 37 side of the active layer 82. The n-type cladding layer 85A is formed of a material containing, for example, AlGaAs (aluminum gallium arsenide). The n-type cladding layer 85A has a thickness of, for example, 20,000 Å or more and 35,000 Å or less. The n-type cladding layer 85A is formed of, for example, Al x Ga (1-x) It is formed by an As(0≦x≦1) layer.

[0053] The p-type semiconductor layer 86 includes a first p-type cladding layer 86A, a first p-type etching stop layer 86B, a second p-type cladding layer 86C, a second p-type etching stop layer 86D, a p-type cap layer 86E, and a p-type contact layer 86F, which are stacked on the p-side guide layer 84. Here, both the first p-type cladding layer 86A and the second p-type cladding layer 86C are examples of the "p-type cladding layer."

[0054] The first p-type cladding layer 86A and the second p-type cladding layer 86C are disposed on the opposite side of the active layer 82 from the n-type cladding layer 85A. Each of the first p-type cladding layer 86A and the second p-type cladding layer 86C is formed of a material containing, for example, AlGaAs. The first p-type cladding layer 86A has a thickness of, for example, 1000 Å or more and 2000 Å or less. The second p-type cladding layer 86C has a thickness of, for example, 8000 Å or more and 12000 Å or less. In other words, the thickness of the second p-type cladding layer 86C is thicker than the thickness of the first p-type cladding layer 86A. Each of the first p-type cladding layer 86A and the second p-type cladding layer 86C is formed of, for example, Al x Ga (1-x) It is formed by an As(0≦x≦1) layer.

[0055] Each of the first p-type etching stop layer 86B and the second p-type etching stop layer 86D is formed of a material containing, for example, InGaP (indium gallium phosphide). The thickness of each of the first p-type etching stop layer 86B and the second p-type etching stop layer 86D is thinner than the thickness of each of the first p-type cladding layer 86A and the second p-type cladding layer 86C. The first p-type etching stop layer 86B has a thickness of, for example, 50 Å or more and 300 Å or less. The second p-type etching stop layer 86D has a thickness of, for example, 50 Å or more and 300 Å or less.

[0056] The p-type cap layer 86E is formed of, for example, a material containing GaAs. The thickness of the p-type cap layer 86E is, for example, thicker than the thicknesses of the first p-type etching stop layer 86B and the second p-type etching stop layer 86D, and thinner than the thicknesses of the first p-type cladding layer 86A and the second p-type cladding layer 86C. The p-type cap layer 86E has a thickness of, for example, 1000 Å or more and 3000 Å or less.

[0057] The p-type contact layer 86F is a low-resistance layer for forming ohmic contact with the first light-emitting electrode 34. The p-type contact layer 86F is formed as a p-type semiconductor layer, for example, in which GaAs is doped with Be (beryllium) as a p-type dopant. The thickness of the p-type contact layer 86F is greater than the thickness of each of the first p-type cladding layer 86A, the first p-type etching stop layer 86B, the second p-type cladding layer 86C, the second p-type etching stop layer 86D, and the p-type cap layer 86E. The p-type contact layer 86F has a thickness of, for example, 30,000 Å or more and 60,000 Å or less.

[0058] The n-type cladding layer 85A and the first and second p-type cladding layers 86A and 86C are configured to confine carriers (electrons and holes) in the active layer 82 and to confine laser light from the active layer 82 between the n-type cladding layer 85A and the first and second p-type cladding layers 86A and 86C. The n-type cladding layer 85A is formed as an n-type semiconductor layer in which, for example, Si (silicon) is implanted into AlGaAs as an n-type dopant. The first and second p-type cladding layers 86A and 86C are each formed as a p-type semiconductor layer in which, for example, Be is implanted into AlGaAs as a p-type dopant.

[0059] The n-type cladding layer 85A has a larger band gap than the n-side guide layer 83. The first p-type cladding layer 86A and the second p-type cladding layer 86C have a larger band gap than the p-side guide layer 84. This enhances the effect of confining carriers in the active layer 82 and the effect of confining laser light from the active layer 82 between the n-type cladding layer 85A and the first p-type cladding layer 86A and the second p-type cladding layer 86C, thereby achieving a highly efficient edge light emitting device 30.

[0060] Each of the n-side guide layer 83 and the p-side guide layer 84 is formed of a material containing AlGaAs. Each of the n-side guide layer 83 and the p-side guide layer 84 has a thickness of, for example, 200 Å or more and 500 Å or less. The n-side guide layer 83 is stacked on the n-type semiconductor layer 85. The p-side guide layer 84 is stacked on the active layer 82. Each of the n-side guide layer 83 and the p-side guide layer 84 is formed of, for example, Al x Ga (1-x) It is formed by an As(0≦x≦1) layer.

[0061] The active layer 82 has a multiple-quantum well (MQW) structure. The active layer 82 is a layer for generating laser light through the recombination of electrons and holes and amplifying the generated laser light. The active layer 82 is formed by repeatedly laminating quantum well layers made of, for example, undoped GaAsP layers and barrier layers made of undoped InAlGaAs layers alternately over multiple periods.

[0062] The ridge portion 87 is formed by removing a portion of each of the second p-type cladding layer 86C, the second p-type etching stop layer 86D, and the p-type cap layer 86E in the p-type semiconductor layer 86. In one example, the second p-type cladding layer 86C, the second p-type etching stop layer 86D, and the p-type cap layer 86E are removed by etching to form the ridge portion 87 having a substantially trapezoidal (mesa) shape in the cross section shown in FIG. 4. The emission region 36 (see FIG. 5) is closer to the n-type semiconductor layer 85 than the ridge portion 87 and is formed at the same position as the ridge portion 87 in the Y direction. The dimension of the emission region 36 in the Y direction is, for example, approximately equal to the maximum dimension of the ridge portion 87 in the Y direction.

[0063] A current confinement layer 88 is formed on the side surface of the ridge portion 87. In one example, the side surface of the p-type cap layer 86E, the side surface of the second p-type etching stop layer 86D, the exposed surface of the second p-type cladding layer 86C, and the exposed surface of the first p-type etching stop layer 86B are covered with the current confinement layer 88. The current confinement layer 88 and the exposed surface of the p-type cap layer 86E are covered with the p-type contact layer 86F.

[0064] In the edge light emitting device 30, the n-side guide layer 83, the active layer 82, and the p-side guide layer 84 form a Fabry-Perot cavity with the first light emitting surface 33A and the second light emitting surface 33B (see FIG. 2 ) as cavity end faces. More specifically, laser light generated in the active layer 82 is amplified by stimulated emission while traveling back and forth between the first light emitting surface 33A and the second light emitting surface 33B. A portion of the amplified laser light is then emitted as laser light from the first light emitting surface 33A and the second light emitting surface 33B. In the present disclosure, edge films (not shown) are formed on the first light emitting surface 33A and the second light emitting surface 33B. The edge films may include an insulating reflective film. The edge films may also include an insulating anti-reflection coating (AR coating). The reflectivity of the edge films including the reflective film may be adjusted. In one example, a reflective film may be formed so that the first light-emitting surface 33A mainly emits laser light and almost no laser light is emitted from the second light-emitting surface 33B. In other words, the end surface film of the second light-emitting surface 33B may be adjusted to have a higher reflectivity than the end surface film of the first light-emitting surface 33A. This makes the intensity of the second laser light emitted from the second light-emitting surface 33B lower than the intensity of the first laser light emitted from the first light-emitting surface 33A. For example, the second laser light can be said to be laser light leaking from the second light-emitting surface 33B when the edge-emitting element 30 emits the first laser light.

[0065] [Photodetector arrangement] The light-receiving element 40 is disposed on the second surface electrode 62S and the third surface electrode 63S with the light-receiving region 49 and the first light-receiving electrode 47A aligned in the Z direction. The first light-receiving electrode 47A is disposed closer to the second surface electrode 62S than the light-receiving region 49. The first light-receiving electrode 47A is adjacent to the second surface electrode 62S in the Z direction. In other words, the light-receiving region 49 is disposed at a position spaced apart from the second surface electrode 62S in the Z direction. Therefore, the light-receiving region 49 is formed so that its center in the Z direction is located higher (closer to the sealing surface 51) than the center of the second element surface 41 in the Z direction.

[0066] The light receiving element 40 and the edge light emitting element 30 are arranged spaced apart from each other in the X direction. When viewed from the X direction, the light receiving element 40 is disposed at a position overlapping the edge light emitting element 30. The light receiving element 40 is disposed on the opposite side of the first light emitting surface 33A with respect to the second light emitting surface 33B of the edge light emitting element 30. The second element surface 41 of the light receiving element 40 is located on the opposite side of the first light emitting surface 33A with respect to the second light emitting surface 33B of the edge light emitting element 30 in the X direction. The light receiving element 40 is disposed on the second surface electrode 62S and the third surface electrode 63S with the second element surface 41 facing the second light emitting surface 33B. The light receiving region 49 formed on the second element surface 41 faces the second light emitting surface 33B in the X direction.

[0067] In one example, the Y-direction dimension of the light receiving element 40 is larger than the Y-direction dimension of the edge light emitting element 30. In other words, the Y-direction dimension of the second element surface 41 is larger than the Y-direction dimension of the second light emitting surface 33B. In another example, the Z-direction dimension of the light receiving element 40 is larger than the Z-direction dimension of the edge light emitting element 30. In other words, the Z-direction dimension of the second element surface 41 is larger than the Z-direction dimension of the second light emitting surface 33B. Therefore, the first element side surface 43 of the light receiving element 40 is located closer to the sealing surface 51 of the sealing member 50 than the first element surface 31 of the edge light emitting element 30.

[0068] The second element surface 41 is positioned to face the second laser light from the second light-emitting surface 33B. Therefore, the position of the light-receiving region 49 of the light-receiving element 40 is set so that the second laser light from the second light-emitting surface 33B of the end-surface light-emitting element 30 is directly incident on the light-receiving region 49. More specifically, the light-receiving region 49 faces the emission region 36 on the second light-emitting surface 33B of the end-surface light-emitting element 30 in the X direction. The center of the light-receiving region 49 faces the emission region 36 in the X direction. In the first embodiment, the center of the light-receiving region 49 faces the center of the emission region 36. Here, the center of the light-receiving region 49 means at least the center of the light-receiving region 49 in the Z direction. In the first embodiment, the center of the light-receiving region 49 in the Y direction faces the emission region 36 in the X direction. As described above, since the first element side surface 43 of the light receiving element 40 is located closer to the sealing surface 51 than the first element surface 31 of the end-face emitting element 30, the light receiving region 49 of the light receiving element 40 is likely to face the emission region 36 of the second light emitting surface 33B, which is formed closer to the first element surface 31, in the X direction.

[0069] When viewed from the X direction, the area of ​​the light receiving region 49 is larger than the area of ​​the emission region 36. For example, the size of the light receiving region 49 in the Z direction is larger than the size of the emission region 36 in the Z direction. For example, the size of the light receiving region 49 in the Y direction is larger than the size of the emission region 36 in the Y direction. For this reason, even if the second laser light emitted from the emission region 36 in the X direction spreads as it approaches the light receiving region 49, the light receiving region 49 is likely to directly receive the second laser light.

[0070] Since the Z-direction dimension of the light receiving element 40 is larger than the Z-direction dimension of the edge light emitting element 30, the light receiving region 49 includes an area that extends above (towards the sealing surface 51) the first element surface 31 of the edge light emitting element 30 when viewed from the X direction.

[0071] [Effect] The operation of the semiconductor light emitting device 10 of the first embodiment will be described. In edge-emitting elements such as EELs, the output power of the first and second laser beams changes depending on the temperature of the edge-emitting element. More specifically, the output power of the first and second laser beams from the edge-emitting element decreases as the temperature of the edge-emitting element increases. On the other hand, in semiconductor light-emitting device 10, it is required that at least the output power of the first laser beam be constant regardless of temperature. Furthermore, there is a correlation between the output power of the first laser beam emitted from first light-emitting surface 33A of edge-emitting element 30 and the output power of the second laser beam emitted from second light-emitting surface 33B. Based on this correlation, the output power of the first laser beam can be determined from the output power of the second laser beam.

[0072] Therefore, in the semiconductor light emitting device 10, the light receiving element 40 receives the second laser light emitted from the second light emitting surface 33B of the edge light emitting element 30, and after grasping the output of the first laser light emitted from the edge light emitting element 30, so-called APC driving is performed, in which the output of the first laser light from the edge light emitting element 30 is controlled to be a predetermined output of the first laser light. In other words, the amount of current supplied to the edge light emitting element 30 is controlled according to the difference between the output of the second laser light received by the light receiving element 40 and the output set value. As a result, the output of the first laser light from the edge light emitting element 30 becomes the predetermined output of the first laser light.

[0073] A possible configuration of a semiconductor light-emitting device that performs APC driving is a configuration (hereinafter referred to as a "comparative configuration") in which a light-receiving element is mounted on a substrate and an edge-emitting element is mounted on the surface of the substrate so that the surface having the light-receiving area is parallel to the substrate surface. In other words, the comparative configuration is a configuration in which both the light-receiving element and the edge-emitting element are arranged on the same plane. However, in the comparative configuration, it is difficult for the light-receiving element to directly receive laser light emitted from the edge-emitting element in a direction parallel to the substrate surface.

[0074] Therefore, the light receiving element 40 is arranged so that the surface (second element surface 41) having the light receiving region 49 is oriented perpendicular to the surface (substrate surface 21) on which the light receiving element 40 is attached. The light receiving element 40 is also arranged so that the second element surface 41 having the light receiving region 49 faces the second light emitting surface 33B of the edge light emitting element 30. This allows the light receiving element 40 to directly receive the second laser light from the second light emitting surface 33B of the edge light emitting element 30 in the semiconductor light emitting device 10. Therefore, even when the edge light emitting element 30 and the light receiving element 40 are provided on the same plane, the second laser light from the edge light emitting element 30 is directly incident on the light receiving region 49 of the light receiving element 40, and therefore, the current supplied to the edge light emitting element 30 by APC driving can be controlled based on the amount of light received by the light receiving region 49.

[0075] [effect] The semiconductor light emitting device 10 of the first embodiment provides the following effects. (1-1) The semiconductor light emitting device 10 includes a first surface electrode 61S, a second surface electrode 62S, and a third surface electrode 63S formed on a substrate surface 21, an edge light emitting element 30 having a first light emitting surface 33A facing a direction intersecting the thickness direction perpendicular to the substrate surface 21, and a second light emitting surface 33B facing the opposite direction to the first light emitting surface 33A, and electrically connected to the first surface electrode 61S, and a light receiving element 40 having a second element surface 41 including a light receiving region 49, and electrically connected to the second surface electrode 62S and the third surface electrode 63S with the second element surface 41 positioned opposite the second light emitting surface 33B.

[0076] According to this configuration, the edge-emitting element 30 and the light-receiving element 40 are disposed on the substrate 20, and the second element surface 41 is disposed at a position where it directly receives the second laser light from the second light-emitting surface 33B of the edge-emitting element 30. Therefore, the light-receiving element 40 can directly receive the second laser light from the edge-emitting element 30. Therefore, when the semiconductor light-emitting device 10 is controlled by APC driving, the output of the first laser light from the first light-emitting surface 33A of the edge-emitting element 30 can be controlled to a preset value based on the amount of received second laser light that is directly incident on the light-receiving element 40.

[0077] (1-2) The semiconductor light emitting device 10 further includes a sealing member 50 that seals at least a portion of the edge light emitting element 30 and the light receiving element 40 . According to this configuration, the edge-emitting element 30 and the light-receiving element 40 are sealed by the sealing member 50, which prevents foreign matter such as moisture and dust from adhering to the edge-emitting element 30 and the light-receiving element 40. Furthermore, compared to a configuration in which the edge-emitting element 30 and the light-receiving element 40 are sealed by, for example, a translucent side wall provided on the substrate 20 that surrounds the edge-emitting element 30 and the light-receiving element 40 and a translucent cap that covers the opening of the side wall, instead of the sealing member 50, the manufacturing process can be simplified and manufacturing costs can be reduced.

[0078] (1-3) The edge light emitting element 30 includes a first element front surface 31 facing the same side as the substrate front surface 21, a first element back surface 32 facing the opposite side to the first element front surface 31, a first light emitting electrode 34 formed on the first element front surface 31, and a second light emitting electrode 35 formed on the first element back surface 32. The second light emitting electrode 35 of the edge light emitting element 30 is electrically connected to the first surface electrode 61S.

[0079] According to this configuration, when the edge light emitting element 30 is arranged with the second light emitting surface 33B facing the second element surface 41 of the light receiving element 40, the second light emitting electrode 35 faces the first surface electrode 61S in the Z direction. Therefore, the length of the conductive path between the second light emitting electrode 35 and the first surface electrode 61S can be shortened compared to a configuration in which the second light emitting electrode 35 and the first surface electrode 61S are connected by a wire.

[0080] (1-4) The second light-emitting electrode 35 and the first surface electrode 61S are bonded together by a conductive bonding material SD. With this configuration, the heat transfer path from the second light-emitting electrode 35 to the first surface electrode 61S is larger than in a configuration in which the second light-emitting electrode 35 and the first surface electrode 61S are connected by a wire, and therefore heat is more easily transferred from the edge-emitting element 30 to the first surface electrode 61S.

[0081] (1-5) The second light emitting surface 33B of the edge light emitting element 30 includes the emission region . The light receiving region 49 of the light receiving element 40 faces the emission region . This configuration makes it easier for the light receiving region 49 to receive the second laser light emitted from the emission region .

[0082] (1-6) The area of ​​the light receiving region 49 is larger than the area of ​​the light emitting region 36 . According to this configuration, even if the arrangement positions of the edge light emitting element 30 and the light receiving element 40 are shifted, the light receiving region 49 can be maintained facing the emission region 36.

[0083] (1-7) The center of the light receiving region 49 faces the light emitting region 36 . According to this configuration, even if the arrangement positions of the edge light emitting element 30 and the light receiving element 40 are shifted, the light receiving region 49 can be maintained facing the emission region 36.

[0084] (1-8) The substrate 20 has a substrate back surface 22 facing the opposite side to the substrate front surface 21 in the Z direction. The semiconductor light emitting device 10 includes first to fourth back surface electrodes 61R to 64R formed on the substrate back surface 22.

[0085] According to this configuration, the semiconductor light emitting device 10 has a surface-mounted package structure, which makes it easier for heat from the edge light emitting element 30 to be transferred to the outside of the semiconductor light emitting device 10 via the first back surface electrode 61R.

[0086] Second Embodiment A semiconductor light emitting device 10 of the second embodiment will be described with reference to FIGS. 6 and 7. In the semiconductor light emitting device 10 of the second embodiment, the positions of the first light receiving electrode 47A and the second light receiving electrode 47B are different from those of the semiconductor light emitting device 10 of the first embodiment. Differences from the semiconductor light emitting device 10 of the first embodiment will be described in detail below, and components common to the semiconductor light emitting device 10 of the first embodiment will be denoted by the same reference numerals and will not be described in detail again. FIG. 6 shows a schematic cross-sectional structure of the semiconductor light emitting device 10 cut along the XZ plane. FIG. 7 shows a schematic side structure of the semiconductor light emitting device 10 as viewed from the X direction.

[0087] As shown in FIGS. 6 and 7 , in the semiconductor light-emitting device 10 of the second embodiment, the light-receiving element 40 includes a second element back surface 42 opposite the second element front surface 41, and a first light-receiving electrode 47A and a second light-receiving electrode 47B formed spaced apart on the second element back surface 42. The first light-receiving electrode 47A is electrically connected to the second surface electrode 62S, and the second light-receiving electrode 47B is electrically connected to the third surface electrode 63S. As in the first embodiment, the first light-receiving electrode 47A is bonded to the second surface electrode 62S by a conductive bonding material SD, and the second light-receiving electrode 47B is bonded to the third surface electrode 63S by a conductive bonding material SD. In the second embodiment, the first light-receiving electrode 47A is not formed on the second element front surface 41. That is, the conductive bonding material SD is not provided on the second element front surface 41 side of the light-receiving element 40, which is the side of the edge-emitting element 30.

[0088] The first light-receiving electrode 47A and the second light-receiving electrode 47B are arranged in a direction intersecting the arrangement direction (X direction) of the edge-surface light-emitting elements 30 and the light-receiving elements 40 in a plan view. In the example shown in FIG. 7, the first light-receiving electrode 47A and the second light-receiving electrode 47B are formed to be spaced apart from each other in the Y direction. In the example shown in FIG. 7, the first light-receiving electrode 47A is provided closer to the fourth substrate side surface 26 in the Y direction than the second light-receiving electrode 47B. The arrangement of the first light-receiving electrode 47A and the second light-receiving electrode 47B on the second element rear surface 42 can be changed as desired. In one example, the first light-receiving electrode 47A and the second light-receiving electrode 47B may be formed to be spaced apart from each other in the Z direction.

[0089] 7, the arrangement of the second surface electrode 62S and the third surface electrode 63S differs from that of the first embodiment due to the change in the positions of the first light receiving electrode 47A and the second light receiving electrode 47B. In one example, the second surface electrode 62S and the third surface electrode 63S are arranged spaced apart from each other in the Y direction. The second surface electrode 62S is arranged closer to the fourth substrate side surface 26 than the third surface electrode 63S.

[0090] [effect] According to the second embodiment, the following effects can be obtained. (2-1) The light-receiving element 40 includes a first light-receiving electrode 47A and a second light-receiving electrode 47B formed spaced apart from each other on the second element rear surface 42. The first light-receiving electrode 47A is electrically connected to the second surface electrode 62S. The second light-receiving electrode 47B is electrically connected to the third surface electrode 63S.

[0091] According to this configuration, since no light-receiving electrode is provided on the second element surface 41 facing the second light-emitting surface 33B, when the first light-receiving electrode 47A and the second light-receiving electrode 47B are joined to the second surface electrode 62S and the third surface electrode 63S by the conductive bonding material SD, the second laser light is prevented from being irradiated onto the conductive bonding material SD. This prevents the second laser light from being reflected by the conductive bonding material SD from entering the light-receiving region 49. This improves the accuracy of output control of the first laser light based on the amount of light received by the light-receiving region 49.

[0092] Third Embodiment A semiconductor light emitting device 10 of the third embodiment will be described with reference to Figure 8. The semiconductor light emitting device 10 of the third embodiment differs mainly in that a submount substrate 90 is provided between the substrate 20 and the edge light emitting element 30. Below, differences between the semiconductor light emitting device 10 of the third embodiment and the semiconductor light emitting device 10 of the first embodiment will be described in detail, and components common to the semiconductor light emitting device 10 of the first embodiment will be given the same reference numerals and detailed description thereof will be omitted. Figure 8 shows a schematic cross-sectional structure of the semiconductor light emitting device 10 cut along the XZ plane.

[0093] As shown in FIG. 8, the semiconductor light emitting device 10 includes a submount substrate 90 interposed between the substrate 20 and the edge light emitting element 30 in the Z direction. The submount substrate 90 is formed in the shape of a rectangular flat plate with its thickness direction aligned with the Z direction. The submount substrate 90 is formed, for example, from a conductive material. Examples of conductive materials that can be used include Cu and Al. In one example, the submount substrate 90 is formed from Cu.

[0094] 8, the submount substrate 90 has a submount front surface 91 and a submount back surface 92 that face opposite each other. The submount front surface 91 faces the same side as the substrate front surface 21 of the substrate 20, and the submount back surface 92 faces the same side as the substrate back surface 22 of the substrate 20.

[0095] The submount substrate 90 is bonded to the first surface electrode 61S by a conductive bonding material SD. The conductive bonding material SD is in contact with the submount back surface 92. In a plan view, the X-direction dimension of the submount substrate 90 is larger than the X-direction dimension of the edge light emitting element 30, and the Y-direction dimension of the submount substrate 90 is larger than the Y-direction dimension of the edge light emitting element 30.

[0096] In the example shown in FIG. 8, the thickness LX1 of the light receiving element 40 is thicker than the thickness LZ1 of the submount substrate 90. Here, the thickness LX1 of the light receiving element 40 can be defined as the distance between the second element front surface 41 and the second element back surface 42 in the X direction. At least a portion of the second light emitting surface 33B is disposed so as to face the light receiving region 49 of the light receiving element 40 in the Z direction. Note that the relationship between the thickness LX1 and the thickness LZ1 can be changed as desired. For example, the thickness LX1 may be equal to the thickness LZ1. For another example, the thickness LX1 may be thinner than the thickness LZ1.

[0097] The edge light emitting element 30 is disposed on a submount substrate 90. The edge light emitting element 30 is bonded to the submount substrate 90 by a conductive bonding material SD. This conductive bonding material SD contacts a surface 91 of the submount.

[0098] In the third embodiment, the sealing member 50 seals at least a portion of the light receiving element 40, the submount substrate 90, and the edge light emitting element 30. In the example shown in FIG. 8, the sealing member 50 seals the wire W. Here, the sealing member 50 is an example of a "cover member." In the third embodiment, the sealing member 50 seals the entire edge light emitting element 30.

[0099] [effect] According to the semiconductor light emitting device 10 of the third embodiment, the following effects can be obtained. (3-1) The semiconductor light emitting device 10 further includes a submount substrate 90 that is interposed between the first surface electrode 61S and the edge light emitting element 30 in the thickness direction and that contacts the first surface electrode 61S and the second light emitting electrode .

[0100] According to this configuration, since the edge light emitting element 30 is provided on the submount substrate 90, heat from the edge light emitting element 30 is easily transferred to the substrate 20 via the submount substrate 90. Therefore, it is possible to prevent the temperature of the edge light emitting element 30 from becoming excessively high.

[0101] In addition, the height of the edge light emitting element 30 can be adjusted by the thickness of the submount substrate 90 so that at least a portion of the second laser light from the second light emitting surface 33B of the edge light emitting element 30 enters the light receiving region 49. This makes it easier to have the light receiving element 40 receive at least a portion of the second laser light from the edge light emitting element 30.

[0102] (3-2) The submount substrate 90 is made of a conductive material. According to this configuration, the second light-emitting electrode 35 and the first surface electrode 61S are electrically connected via the submount substrate 90. Therefore, compared to a configuration in which the second light-emitting electrode 35 and the first surface electrode 61S are connected by a wire passing outside the submount substrate 90, the length of the conductive path between the second light-emitting electrode 35 and the first surface electrode 61S can be shortened.

[0103] <Fourth embodiment> A semiconductor light emitting device 10 of the fourth embodiment will be described with reference to Fig. 9. The semiconductor light emitting device 10 of the fourth embodiment differs from the semiconductor light emitting device 10 of the first embodiment mainly in the configuration of the sealing member 50. Below, differences from the semiconductor light emitting device 10 of the first embodiment will be described in detail, and components common to the semiconductor light emitting device 10 of the first embodiment will be given the same reference numerals and detailed description thereof will be omitted. Fig. 9 shows a schematic cross-sectional structure of the semiconductor light emitting device 10 cut along the XZ plane.

[0104] As shown in FIG. 9 , the sealing member 50 of the fourth embodiment is provided to seal the second light-emitting surface 33B of the edge-emitting element 30 while exposing the first light-emitting surface 33A. More specifically, the second sealing side surface 54 is disposed closer to the first substrate side surface 23 than the first light-emitting surface 33A of the edge-emitting element 30. As a result, the first light-emitting surface 33A is exposed from the sealing member 50. On the other hand, the second sealing side surface 54 is disposed closer to the second substrate side surface 24 than the second light-emitting surface 33B of the edge-emitting element 30. As a result, the second light-emitting surface 33B is sealed by the sealing member 50. Furthermore, the light-receiving region 49 of the light-receiving element 40 is sealed by the sealing member 50. In the example shown in FIG. 9 , the sealing member 50 seals the entire light-receiving element 40. In this way, the sealing member 50 seals at least the second light-emitting surface 33B of the edge-emitting element 30 and the light-receiving region 49 of the light-receiving element 40.

[0105] 9, the wire W is exposed from the sealing member 50. Therefore, a portion of the first light-emitting electrode 34, a portion of the first surface electrode 61S, and a portion of the fourth surface electrode 64S of the edge-emitting element 30 are each exposed from the sealing member 50. In other words, the wire W electrically connects the first light-emitting electrode 34 and the fourth surface electrode 64S outside the sealing member 50.

[0106] [effect] According to the semiconductor light emitting device 10 of the fourth embodiment, the following effects can be obtained. (4-1) The sealing member 50 exposes the first light emitting surface 33A of the edge light emitting element 30.

[0107] According to this configuration, the first laser light from the first light-emitting surface 33A is emitted to the outside of the semiconductor light-emitting device 10 without passing through the sealing member 50, so that the first laser light can be prevented from being diffused by the sealing member 50.

[0108] (4-2) The wire W is provided outside the sealing member 50. With this configuration, compared to a configuration in which the sealing member 50 seals the wire W, stress on the wire W due to the difference in thermal expansion coefficient between the sealing member 50 and the wire W can be suppressed when a temperature change occurs.

[0109] Fifth Embodiment A semiconductor light emitting device 10 of a fifth embodiment will be described with reference to Fig. 10. The semiconductor light emitting device 10 of the fifth embodiment differs from the semiconductor light emitting device 10 of the first embodiment mainly in that a light-shielding layer is provided on the sealing surface 51 of the sealing member 50. Below, differences from the semiconductor light emitting device 10 of the first embodiment will be described in detail, and components common to the semiconductor light emitting device 10 of the first embodiment will be given the same reference numerals and detailed description thereof will be omitted. Fig. 10 shows a schematic cross-sectional structure of the semiconductor light emitting device 10 cut along the XZ plane.

[0110] 10 , in the fifth embodiment, a light-shielding layer 120 is provided on the sealing surface 51 of the sealing member 50 in a plan view, between the second light-emitting surface 33B of the edge-emitting element 30 and the second element surface 41 of the light-receiving element 40. The light-shielding layer 120 is provided so as to cover both the second light-emitting surface 33B and the second element surface 41 in a plan view, for example. In the example shown in FIG. 10 , the light-shielding layer 120 is disposed closer to the first sealing side surface 53 than the first light-emitting surface 33A. In other words, the light-shielding layer 120 does not cover the first light-emitting surface 33A in a plan view.

[0111] Although not shown, the Y-direction dimension of the light-shielding layer 120 is, for example, equal to or greater than the Y-direction dimension of the light-receiving region 49 of the light-receiving element 40. Furthermore, the Y-direction dimension of the light-shielding layer 120 is, for example, equal to or greater than the Y-direction dimension of the emission region 36 of the second light-emitting surface 33B. Furthermore, the Y-direction dimension of the light-shielding layer 120 may be, for example, equal to or greater than the Y-direction dimension of the light-receiving element 40. Furthermore, the Y-direction dimension of the light-shielding layer 120 may be, for example, equal to or greater than the Y-direction dimension of the edge-emitting element 30. Furthermore, the Y-direction dimension of the light-shielding layer 120 may be equal to the Y-direction dimension of the sealing member 50.

[0112] The light-shielding layer 120 may be formed of, for example, a resin material having light-shielding properties. For example, a black epoxy resin is used as the resin material having light-shielding properties. The light-shielding layer 120 may also be formed of, for example, a metal film. The light-shielding layer 120 may also be formed of an anti-reflection film (AR coating). The shape of the light-shielding layer 120 can be changed as desired.

[0113] The position and size of the light-shielding layer 120 can be changed as desired. For example, the light-shielding layer 120 only needs to be provided so as to prevent light from outside the semiconductor light-emitting device 10 from entering the light-receiving region 49, and therefore the light-shielding layer 120 does not need to cover the second light-emitting surface 33B in a planar view. Furthermore, the light-shielding layer 120 does not need to cover the light-receiving region 49 in a planar view as long as the light does not enter the light-receiving region 49. For example, the light-shielding layer 120 can be arranged at a position on the sealing surface 51 adjacent to the light-receiving region 49 in the X direction in a planar view. Furthermore, the dimensions of the light-shielding layer 120 in the X direction and the Y direction can each be changed as desired.

[0114] [effect] According to the semiconductor light emitting device 10 of the fifth embodiment, the following effects can be obtained. (5-1) The sealing member 50 has a sealing surface 51 facing the same side as the substrate surface 21, and when viewed from the thickness direction, a light-shielding layer 120 is provided on the sealing surface 51 between the second light-emitting surface 33B and the second element surface 41.

[0115] This configuration can prevent external light from entering the light-receiving region 49. This reduces noise caused by external light, thereby improving the accuracy of output control of the first laser light based on the amount of light received by the light-receiving region 49.

[0116] Sixth Embodiment A semiconductor light emitting device 10 of the sixth embodiment will be described with reference to Fig. 11. The semiconductor light emitting device 10 of the sixth embodiment differs from the semiconductor light emitting device 10 of the first embodiment mainly in the configuration of the sealing member 50. Below, differences from the semiconductor light emitting device 10 of the first embodiment will be described in detail, and components common to the semiconductor light emitting device 10 of the first embodiment will be given the same reference numerals and detailed description thereof will be omitted. Fig. 11 shows a schematic cross-sectional structure of the semiconductor light emitting device 10 cut along the XZ plane.

[0117] 11, the sealing member 50 of the sixth embodiment includes a diffusing material 72. The diffusing material 72 diffuses light inside the sealing member 50 by reflecting (scattering) light at the interface between the resin in the sealing member 50 and the diffusing material 72.

[0118] The material of the diffusing material 72 is not particularly limited, but for example, silica or other glass materials can be used. In one example, spherical silica filler is used as the diffusing material 72. The particle size of the diffusing material 72 is not particularly limited, but for example, a particle size that is sufficiently small relative to the wavelengths of the first laser light and second laser light emitted from the edge-emitting element 30 is selected so that scattering occurs predominantly.

[0119] The diffusing material 72 is dispersed as fine particles in the sealing member 50. The diffusing material 72 is mixed with the sealing member 50 at a predetermined blend ratio. In one example, the diffusing material 72 is uniformly dispersed within the sealing member 50. The blend ratio of the diffusing material 72 to the resin of the sealing member 50 is not particularly limited, and may be greater than 0% and less than 100%. The higher the blend ratio of the diffusing material 72, the easier it is for the light receiving element 40 to receive scattered light, thereby widening the beam angle of the first laser light of the edge-emitting element 30. Furthermore, by limiting the upper limit of the blend ratio of the diffusing material 72 to a predetermined value, a significant decrease in the output and radiation intensity of the laser light (first laser light) of the semiconductor light-emitting device 10 can be suppressed. In one example, the diffusing material 72 is selected to have a smaller thermal expansion coefficient than the resin of the sealing member 50.

[0120] [effect] According to the semiconductor light emitting device 10 of the sixth embodiment, the following effects can be obtained. (6-1) The sealing member 50 includes a plurality of diffusion materials 72 that are provided inside the sealing member 50 and that diffuse the laser light emitted by the edge-emitting element 30 .

[0121] According to this configuration, the light receiving element 40 receives a portion of the second laser light emitted from the second light emitting surface 33B of the edge light emitting element 30 that has been diffused by the diffusing material 72 inside the sealing member 50. This makes it easy for the light receiving element 40 to receive the second laser light even if there is a misalignment between the edge light emitting element 30 and the light receiving element 40. In addition, the first laser light from the first light emitting surface 33A of the edge light emitting element 30 is diffused by the multiple diffusing materials 72, thereby widening the beam angle of the first laser light. Therefore, the beam angle of the laser light from the semiconductor light emitting device 10 can be widened.

[0122] (6-2) For the diffusion material 72, a material having a thermal expansion coefficient smaller than that of the resin material of the sealing member 50 is selected, for example. This configuration can reduce the thermal stress generated in the sealing member 50 by the diffusion material 72, compared to a configuration in which the sealing member 50 does not include multiple diffusion materials 72. As a result, the stress applied to the wire W due to the thermal stress of the sealing member 50 can be reduced.

[0123] Seventh Embodiment A semiconductor light-emitting device 10 of the seventh embodiment will be described with reference to Fig. 12. The seventh embodiment differs from the first embodiment in that an anti-reflection layer is provided on the substrate surface 21 between the edge light-emitting element 30 and the light-receiving element 40. Below, differences from the semiconductor light-emitting device 10 of the sixth embodiment will be described in detail, and components common to the semiconductor light-emitting device 10 of the first embodiment will be given the same reference numerals and detailed description thereof will be omitted. Fig. 12 shows a schematic cross-sectional structure of the semiconductor light-emitting device 10 cut along the XZ plane.

[0124] 12, the first surface electrode 61S includes a first protruding portion 131 that protrudes from the second light-emitting surface 33B toward the light-receiving element 40 in a planar view. The second surface electrode 62S includes a second protruding portion 132 that protrudes from the second element surface 41 toward the edge-emitting element 30 in a planar view. A first conductive bonding material SD1 that bonds the second light-emitting electrode 35 and the first surface electrode 61S is provided in the first protruding portion 131, and a second conductive bonding material SD2 that bonds the first light-receiving electrode 47A and the second surface electrode 62S is provided in the second protruding portion 132. Note that both the first conductive bonding material SD1 and the second conductive bonding material SD2 may be the same bonding material as the conductive bonding material SD of the first embodiment, for example.

[0125] As shown in FIG. 12 , in the seventh embodiment, an antireflection layer 140 covering the first conductive bonding material SD1, the second conductive bonding material SD2, the first protruding portion 131, and the second protruding portion 132 is provided on the substrate surface 21. The antireflection layer 140 is provided, for example, in a plan view, between the second light-emitting surface 33B of the edge-emitting element 30 and the second element surface 41 of the light-receiving element 40. The antireflection layer 140 is provided closer to the substrate 20 in the Z direction than the light-receiving region 49. In other words, the antireflection layer 140 has an antireflection layer surface 141 facing the same side as the sealing surface 51 in the Z direction, and the antireflection layer surface 141 is located closer to the substrate 20 than the portion of the light-receiving region 49 closest to the substrate 20 in the Z direction. Also, as shown in FIG. 12 , the antireflection layer 140 is provided to cover the first light-receiving electrode 47A, for example. In other words, the antireflection layer surface 141 is located closer to the sealing surface 51 in the Z direction than the portion of the first light-receiving electrode 47A that is closest to the sealing surface 51. Also, as shown in Figure 12, the antireflection layer 140 is in contact with, for example, the second light-emitting surface 33B of the edge-emitting element 30 and the second element surface 41 of the light-receiving element 40.

[0126] Although not shown, the dimension of the antireflection layer 140 in the Y direction is equal to or greater than the dimensions of, for example, the first conductive bonding material SD1, the second conductive bonding material SD2, the first protruding portion 131, and the second protruding portion 132. The dimension of the light-shielding layer 120 in the Y direction may be equal to the dimension of the sealing member 50 in the Y direction.

[0127] The anti-reflection layer 140 may be made of, for example, a black resin. Alternatively, the anti-reflection layer 140 may be made of an anti-reflection coating (AR coat). The anti-reflection layer 140 is formed, for example, in a rectangular shape in plan view. The shape of the anti-reflection layer 140 in plan view can be changed as desired.

[0128] The position and size of the antireflection layer 140 can be changed as desired. In one example, the antireflection layer 140 only needs to be provided so that light reflected from the first conductive bonding material SD1, the second conductive bonding material SD2, the first protruding portion 131, and the second protruding portion 132 does not enter the light-receiving region 49, and therefore the antireflection layer 140 does not need to be in contact with the substrate surface 21. Furthermore, the antireflection layer 140 does not need to be provided so as to cover the first light-receiving electrode 47A as long as the light does not enter the light-receiving region 49. Furthermore, each dimension of the antireflection layer 140 in the Y direction can be changed as desired.

[0129] [effect] According to the semiconductor light emitting device 10 of the seventh embodiment, the following effects can be obtained. (7-1) The semiconductor light emitting device 10 includes an antireflection layer 140 that covers both the first protruding portion 131 of the first surface electrode 61S and the second protruding portion 132 of the second surface electrode 62S.

[0130] This configuration can prevent light reflected by either the first protruding portion 131 or the second protruding portion 132 from entering the light-receiving region 49. Therefore, noise in the amount of light received by the light-receiving region 49 can be reduced, and the accuracy of output control of the first laser light based on the amount of light received by the light-receiving region 49 can be improved.

[0131] (7-2) A first conductive bonding material SD1 that bonds the second light-emitting electrode 35 and the first surface electrode 61S is provided in the first protruding portion 131. A second conductive bonding material SD2 that bonds the first light-receiving electrode 47A and the second surface electrode 62S is provided in the second protruding portion 132. The anti-reflection layer 140 covers both the first conductive bonding material SD1 and the second conductive bonding material SD2.

[0132] This configuration can prevent light reflected by either the first conductive bonding material SD1 or the second conductive bonding material SD2 from entering the light-receiving region 49. Therefore, noise in the amount of light received by the light-receiving region 49 can be reduced, and the accuracy of output control of the first laser light based on the amount of light received by the light-receiving region 49 can be improved.

[0133] Eighth Embodiment A semiconductor light emitting device 10 of the eighth embodiment will be described with reference to Fig. 13. The semiconductor light emitting device 10 of the eighth embodiment differs from the semiconductor light emitting device 10 of the first embodiment mainly in the configuration of the sealing member 50. Below, differences from the semiconductor light emitting device 10 of the first embodiment will be described in detail, and components common to the semiconductor light emitting device 10 of the first embodiment will be given the same reference numerals and detailed description thereof will be omitted. Fig. 13 shows a schematic cross-sectional structure of the semiconductor light emitting device 10 cut along the XZ plane.

[0134] As shown in FIG. 13, the semiconductor light emitting device 10 of the eighth embodiment includes a case 100 as a cover member instead of the sealing member 50 (see FIG. 1). The case 100 houses at least a portion of the edge light emitting element 30 and at least a portion of the light receiving element 40. In the example shown in FIG. 13, the case 100 houses the entire edge light emitting element 30 and the entire light receiving element 40. More specifically, the case 100 is provided on the substrate 20. The case 100 is attached to the substrate 20 by, for example, an adhesive. A sealed space SC is formed by the case 100 and the substrate surface 21 of the substrate 20. The edge light emitting element 30 and the light receiving element 40 are arranged in the sealed space SC.

[0135] The case 100 is formed in a box shape that opens toward the substrate 20. The case 100 includes a top wall 101 and four side walls 102. The top wall 101 is formed in a flat plate shape that is perpendicular to the Z direction. The four side walls 102 extend along the first to fourth substrate side surfaces 23 to 26 (see FIG. 1) in a plan view.

[0136] The case 100 is made of a material that is transmissive to the first laser light and the second laser light of the edge-emitting element 30. The sealing member 50 is made of a material that includes at least one of a silicone resin, an epoxy resin, and an acrylic resin. In one example, the case 100 is made of a silicone resin.

[0137] [effect] According to the semiconductor light emitting device 10 of the eighth embodiment, the following effects can be obtained. (8-1) The semiconductor light emitting device 10 is provided on the substrate surface 21 and includes a case 100 that houses an edge light emitting element 30 and a light receiving element 40.

[0138] According to this configuration, the wire W is disposed within the sealed space SC formed by the case 100 and the substrate 20. Therefore, it is possible to prevent stress from being applied to the wire W due to temperature changes.

[0139] <Example of change> The above-described embodiments can be modified as follows: Furthermore, the above-described embodiments and the following modifications can be combined with each other within the scope of technical compatibility.

[0140] The first to eighth embodiments can be combined with each other to the extent that no technical contradiction occurs. As an example, in the first to fifth and seventh embodiments, the sealing member 50 may include the diffusion material 72 of the sixth embodiment.

[0141] As an example, in the first, second, and fourth to eighth embodiments, the semiconductor light emitting device 10 may include a submount substrate 90. For example, in the first to seventh embodiments, the semiconductor light emitting device 10 may include a case 100 instead of the sealing member 50.

[0142] In the eighth embodiment, the configuration of the case 100 can be changed as desired. For example, the case 100 may be changed to a first example configuration shown in FIG. 14 or a second example configuration shown in FIG.

[0143] 14 , the case 100 of the first example may omit the side wall 102 facing the first light-emitting surface 33A of the edge light-emitting element 30, out of the four side walls 102. The side wall 102 facing the first light-emitting surface 33A is a side wall that runs along the second substrate side surface 24 of the substrate 20 in a plan view. With this configuration, the first laser light from the second light-emitting surface 33B does not pass through the side wall 102, and therefore the first laser light can be emitted to the outside of the semiconductor light-emitting device 10 without being diffused by the side wall 102.

[0144] 15 , the case 100 of the second example may have a light diffusion portion 104 formed on one of the four side walls 102 that faces the first light-emitting surface 33A of the edge-light-emitting element 30, i.e., the side wall 102 through which the first laser light passes. The light diffusion portion 104 is formed, for example, in a region of the side wall 102 through which the first laser light passes that faces the first light-emitting surface 33A in the X direction. As shown in FIG. 15 , the light diffusion portion 104 includes irregularities formed on the inner surface of the side wall 102 that faces the first light-emitting surface 33A of the edge-light-emitting element 30, for example. The irregularities constituting the light diffusion portion 104 include, for example, a curved concave surface that is curvedly recessed from the inner surface of the side wall 102.

[0145] According to this configuration, the beam angle of the first laser beam can be widened by diffusing the first laser beam by the light diffusing portion 104. Therefore, the beam angle of the laser beam of the semiconductor light emitting device 10 can be widened.

[0146] The formation area of ​​the light diffusion section 104 can be changed as desired. The formation area of ​​the light diffusion section 104 may cover the entire first light-emitting surface 33A and may be larger than the area of ​​the first light-emitting surface 33A when viewed from the X direction. In one example, the light diffusion section 104 may be formed over the entire side wall 102 through which the first laser light passes. The configuration of the light diffusion section 104 can be changed as desired as long as it is capable of diffusing the first laser light. In one example, the side wall 102 facing the first light-emitting surface 33A of the edge-surface light-emitting element 30 out of the four side walls 102 includes a flat surface that is the inner surface of the side wall 102 other than the light diffusion section 104, and a rough surface that is the inner surface constituting the light diffusion section 104 and is rougher than the flat surface.

[0147] In the first to fourth, sixth and seventh embodiments, a light-shielding layer 120 may be provided on the surface of the sealing member 50. The light-shielding layer 120 covers the light-receiving region 49 of the light-receiving element 40, for example, when viewed from the thickness direction of the substrate 20. The light-shielding layer 120 may be formed, for example, from a resin material having light-shielding properties. An example of the light-shielding resin material is black epoxy resin. The light-shielding layer 120 may be formed, for example, from a metal film. The light-shielding layer 120 may be formed from an anti-reflection coating (AR coating). The light-shielding layer 120 is formed, for example, in a rectangular shape when viewed from a direction perpendicular to the sealing surface 51. The shape of the light-shielding layer 120 when viewed from a direction perpendicular to the sealing surface 51 can be changed as desired.

[0148] In the eighth embodiment, a light-shielding layer 120 may be provided on the outer surface of the case 100. The light-shielding layer 120 covers the light-receiving region 49 of the light-receiving element 40, for example, when viewed from the thickness direction of the substrate 20. The light-shielding layer 120 is formed, for example, in a rectangular shape when viewed from a direction perpendicular to the sealing surface 51. Note that the shape of the light-shielding layer 120 when viewed from a direction perpendicular to the sealing surface 51 can be changed as desired.

[0149] In the eighth embodiment, the case 100 is configured to accommodate the entire edge light emitting element 30 and the entire light receiving element 40, but this is not limited to this. In one example, the case 100 may accommodate a portion of the edge light emitting element 30 and a portion of the light receiving element 40, with another portion of the edge light emitting element 30 and another portion of the light receiving element 40 positioned outward from the case 100.

[0150] In the first to seventh embodiments, the material constituting the sealing member 50 can be changed as desired. For example, the sealing member 50 may be made of a material that blocks visible light and transmits laser light of a specific wavelength different from visible light. The laser light of the specific wavelength is, for example, an ultraviolet laser. The material constituting the sealing member 50 may be, for example, a visible light-blocking silicone sealing material. For example, AIR-7051-A / B (manufactured by Shin-Etsu Chemical Co., Ltd.) may be used as this sealing material. In this case, the edge-emitting element 30 is configured to emit laser light of a specific wavelength different from visible light.

[0151] In the third embodiment, the submount substrate 90 may be made of an insulating material. Examples of insulating materials include epoxy resin and ceramic. Examples of ceramic include AlN and Al2O3. In this case, the submount substrate 90 may include through-hole wiring that penetrates the submount substrate 90 in the Z direction, which is the thickness direction of the submount substrate 90. There may be one through-hole wiring, or multiple through-hole wirings. Furthermore, the submount substrate 90 may be made of a material containing, for example, silicon (Si). In this case, the submount substrate 90 may also include the through-hole wiring.

[0152] In the eighth embodiment, the material constituting the case 100 can be changed as desired. For example, the case 100 may be formed from a material that blocks visible light and transmits laser light of a specific wavelength different from visible light. The laser light of the specific wavelength is, for example, an ultraviolet laser. The material constituting the case 100 may be, for example, a visible light-blocking silicone sealant. For example, AIR-7051-A / B (manufactured by Shin-Etsu Chemical Co., Ltd.) may be used as this sealant. In this case, the edge-emitting element 30 is configured to emit laser light of a specific wavelength different from visible light.

[0153] In each embodiment, the relationship between the area of ​​the emission region 36 of the second light-emitting surface 33B of the edge-emitting element 30 and the area of ​​the light-receiving region 49 of the light-receiving element 40 can be changed as desired. In one example, the area of ​​the emission region 36 and the area of ​​the light-receiving region 49 may be equal to each other. In another example, the area of ​​the light-receiving region 49 may be smaller than the area of ​​the emission region 36.

[0154] In each embodiment, the relationship between the Z-direction dimension of the emission region 36 of the second light-emitting surface 33B of the edge-emitting element 30 and the Z-direction dimension of the light-receiving region 49 of the light-receiving element 40 can be changed as desired. In one example, the Z-direction dimension of the emission region 36 and the Z-direction dimension of the light-receiving region 49 may be equal to each other. In another example, the Z-direction dimension of the light-receiving region 49 may be smaller than the Z-direction dimension of the emission region 36.

[0155] In each embodiment, as long as the light receiving region 49 of the light receiving element 40 can receive laser light from the emission region 36 of the second light emitting surface 33B, the light receiving region 49 may be positioned slightly offset from the emission region 36 rather than facing it.

[0156] In each embodiment, a plurality of edge light emitting elements 30 and a plurality of light receiving elements 40 may be provided. First to sixth modified examples of the configuration of the semiconductor light emitting device 10 including a plurality of edge light emitting elements 30 and a plurality of light receiving elements 40 will be described with reference to FIGS.

[0157] (First modified example) 16, the semiconductor light emitting device 10 of the first modified example includes a first edge light emitting element 30A, a second edge light emitting element 30B, and a third edge light emitting element 30C as a plurality of edge light emitting elements 30, and a first light receiving element 40A, a second light receiving element 40B, and a third light receiving element 40C as a plurality of light receiving elements 40. The semiconductor light emitting device 10 of the first modified example also includes a plurality of first surface electrodes 61SA-61SC and a plurality of fourth surface electrodes 64SA-64SC corresponding to the number of edge light emitting elements 30. Meanwhile, the number of second surface electrodes 62S and third surface electrodes 63S is the same as in each embodiment. That is, the second surface electrode 62S and the third surface electrode 63S are surface electrodes common to the first to third light receiving elements 40A-40C.

[0158] The first surface electrodes 61SA to 61SC and the fourth surface electrodes 64SA to 64SC are arranged alternately one by one in the Y direction. Both the second surface electrode 62S and the third surface electrode 63S extend along the Y direction.

[0159] The first edge-emitting element 30A is mounted on a first surface electrode 61SA. The first light-emitting electrode 34 of the first edge-emitting element 30A and the fourth surface electrode 64SA are connected by a wire WA. Therefore, the second light-emitting electrode 35 (see FIG. 3) of the first edge-emitting element 30A is electrically connected to the first surface electrode 61SA, and the first light-emitting electrode 34 of the first edge-emitting element 30A is electrically connected to the fourth surface electrode 64SA.

[0160] The second edge-emitting element 30B is mounted on the first surface electrode 61SB. The first light-emitting electrode 34 of the second edge-emitting element 30B is connected to the fourth surface electrode 64SB by a wire WB. Therefore, the second light-emitting electrode 35 of the second edge-emitting element 30B is electrically connected to the first surface electrode 61SB, and the first light-emitting electrode 34 of the second edge-emitting element 30B is electrically connected to the fourth surface electrode 64SB.

[0161] The third edge-emitting element 30C is mounted on the first surface electrode 61SC. The first light-emitting electrode 34 of the third edge-emitting element 30C and the fourth surface electrode 64SC are connected by a wire WC. Therefore, the second light-emitting electrode 35 of the third edge-emitting element 30C is electrically connected to the first surface electrode 61SC, and the first light-emitting electrode 34 of the third edge-emitting element 30C is electrically connected to the fourth surface electrode 64SC.

[0162] The first light receiving element 40A is disposed in a position facing the first edge light emitting element 30A in the Y direction. The second element surface 41 of the first light receiving element 40A faces the second light emitting surface 33B of the first edge light emitting element 30A. The arrangement of the first light receiving element 40A and the first edge light emitting element 30A is similar to the arrangement of the light receiving element 40 and the edge light emitting element 30 in the first embodiment, for example.

[0163] The second light receiving element 40B is disposed in a position facing the second edge light emitting element 30B in the Y direction. The second element surface 41 of the second light receiving element 40B faces the second light emitting surface 33B of the second edge light emitting element 30B. The arrangement of the second light receiving element 40B and the second edge light emitting element 30B is similar to the arrangement of the light receiving element 40 and the edge light emitting element 30 in the first embodiment, for example.

[0164] The third light receiving element 40C is disposed in a position facing the third edge light emitting element 30C in the Y direction. The second element surface 41 of the third light receiving element 40C faces the second light emitting surface 33B of the third edge light emitting element 30C. The arrangement of the third light receiving element 40C and the third edge light emitting element 30C is similar to the arrangement of the light receiving element 40 and the edge light emitting element 30 in the first embodiment, for example.

[0165] Although not shown, the first light-receiving electrode 47A of each of the first to third light-receiving elements 40A to 40C is mounted on the second surface electrode 62S, and the second light-receiving electrode 47B of each of the first to third light-receiving elements 40A to 40C is mounted on the third surface electrode 63S. As a result, the first light-receiving electrode 47A of each of the first to third light-receiving elements 40A to 40C is electrically connected to the second surface electrode 62S, and the second light-receiving electrode 47B of each of the first to third light-receiving elements 40A to 40C is electrically connected to the third surface electrode 63S.

[0166] The semiconductor light emitting device 10 includes, for example, a sealing member 50 (not shown). Although not shown, the sealing member 50 seals each of the first to third end surface light emitting elements 30A to 30C and the first to third light receiving elements 40A to 40C. The configuration of the sealing member 50 can be changed as desired, and for example, the semiconductor light emitting device 10 may include the sealing member 50 of the sixth embodiment. Furthermore, the semiconductor light emitting device 10 may include a case 100 (see FIG. 13) instead of the sealing member 50.

[0167] (Second modified example) 17, the semiconductor light emitting device 10 of the second modified example includes a first edge surface light emitting element 30A, a second edge surface light emitting element 30B, a third edge surface light emitting element 30C, and a fourth edge surface light emitting element 30D as a plurality of edge surface light emitting elements 30, and a first light receiving element 40A and a second light receiving element 40B as a plurality of light receiving elements 40. In other words, unlike the first modified example, the number of light receiving elements 40 is less than the number of edge surface light emitting elements 30. The first light receiving element 40A is a light receiving element corresponding to the first edge surface light emitting element 30A and the second edge surface light emitting element 30B, and the second light receiving element 40B is a light receiving element corresponding to the third edge surface light emitting element 30C and the fourth edge surface light emitting element 30D.

[0168] Furthermore, the semiconductor light emitting device 10 of the first modified example includes a plurality of first surface electrodes 61SA-61SD corresponding to the number of edge light emitting elements 30. On the other hand, in the semiconductor light emitting device 10 of the second modified example, the number of fourth surface electrodes is smaller than the number of edge light emitting elements 30. In the example shown in Fig. 17, the semiconductor light emitting device 10 includes two fourth surface electrodes 64SA, 64SB.

[0169] The first surface electrodes 61SA-61SD and the fourth surface electrodes 64SA and 64SB are arranged in positions that overlap each other when viewed from the Y direction, for example. In the example shown in Fig. 17, the first surface electrodes 61SA-61SD are arranged between the fourth surface electrodes 64SA and 64SB in the Y direction. That is, the fourth surface electrodes 64SA and 64SB are arranged dispersedly at both ends in the Y direction, which is the arrangement direction of the first surface electrodes 61SA-61SD and the fourth surface electrodes 64SA and 64SB. The fourth surface electrode 64SA is arranged closer to the substrate side surface 26 than the first surface electrodes 61SA-61SD. The fourth surface electrode 64SB is arranged closer to the substrate side surface 25 than the first surface electrodes 61SA-61SD.

[0170] On the other hand, the number of second surface electrodes 62S and third surface electrodes 63S is the same as in each embodiment. That is, the second surface electrodes 62S and the third surface electrodes 63S are common surface electrodes for the first light receiving element 40A and the second light receiving element 40B. Both the second surface electrodes 62S and the third surface electrodes 63S extend along the Y direction.

[0171] The first edge-emitting element 30A is mounted on a first surface electrode 61SA. The first light-emitting electrode 34 of the first edge-emitting element 30A and the fourth surface electrode 64SA are connected by a wire WA. Therefore, the second light-emitting electrode 35 (see FIG. 3) of the first edge-emitting element 30A is electrically connected to the first surface electrode 61SA, and the first light-emitting electrode 34 of the first edge-emitting element 30A is electrically connected to the fourth surface electrode 64SA.

[0172] The second edge-emitting element 30B is mounted on the first surface electrode 61SB. The first light-emitting electrode 34 of the second edge-emitting element 30B and the fourth surface electrode 64SA are connected by a wire WB. Therefore, the second light-emitting electrode 35 of the second edge-emitting element 30B is electrically connected to the first surface electrode 61SB, and the first light-emitting electrode 34 of the second edge-emitting element 30B is electrically connected to the fourth surface electrode 64SA. In this way, the fourth surface electrode 64SA serves as a surface electrode (anode electrode) common to the first edge-emitting element 30A and the second edge-emitting element 30B.

[0173] The third edge-emitting element 30C is mounted on the first surface electrode 61SC. The first light-emitting electrode 34 of the third edge-emitting element 30C is connected to the fourth surface electrode 64SB by a wire WC. Therefore, the second light-emitting electrode 35 of the third edge-emitting element 30C is electrically connected to the first surface electrode 61SC, and the first light-emitting electrode 34 of the third edge-emitting element 30C is electrically connected to the fourth surface electrode 64SB.

[0174] The fourth edge-emitting element 30D is mounted on the first surface electrode 61SD. The first light-emitting electrode 34 of the fourth edge-emitting element 30D and the fourth surface electrode 64SB are connected by a wire WD. Therefore, the second light-emitting electrode 35 of the fourth edge-emitting element 30D is electrically connected to the first surface electrode 61SD, and the first light-emitting electrode 34 of the fourth edge-emitting element 30D is electrically connected to the fourth surface electrode 64SB. In this way, the fourth surface electrode 64SB serves as a common surface electrode (anode electrode) for the third edge-emitting element 30C and the fourth edge-emitting element 30D.

[0175] The first light receiving element 40A is disposed in a position facing the first edge light emitting element 30A and the second edge light emitting element 30B in the Y direction. The second element surface 41 of the first light receiving element 40A faces both the second light emitting surface 33B of the first edge light emitting element 30A and the second light emitting surface 33B of the second edge light emitting element 30B. The arrangement of the first light receiving element 40A, the first edge light emitting element 30A, and the second edge light emitting element 30B may be similar to that of the first embodiment. However, in FIG. 17, due to a change in the number of edge light emitting elements 30 facing one light receiving element 40, for example, the ratio of the Y-direction dimension to the X-direction dimension of each light receiving element 40 differs from that of the first embodiment. As shown in FIG. 17, the first light receiving element 40A is disposed in a position overlapping the first edge light emitting element 30A and the second edge light emitting element 30B when viewed in the X direction. In one example, in a planar view, the dimension in the Y direction of the first light receiving element 40A is greater than the sum of the dimension in the Y direction of the first edge surface light emitting element 30A, the dimension in the Y direction of the second edge surface light emitting element 30B, and the distance in the Y direction between the first edge surface light emitting element 30A and the second edge surface light emitting element 30B.

[0176] The light receiving regions 49 of the first light receiving element 40A are provided in accordance with the number of edge light emitting elements 30. That is, the first light receiving element 40A has two light receiving regions 49, and each light receiving region 49 faces the emission region 36 of the first edge light emitting element 30A and the second edge light emitting element 30B. The arrangement of the light receiving regions 49 of the first light receiving element 40A and the emission regions 36 of the first edge light emitting element 30A and the second edge light emitting element 30B is the same as, for example, the first embodiment.

[0177] The second light receiving element 40B is disposed in a position facing the third edge light emitting element 30C and the fourth edge light emitting element 30D in the Y direction. The second element surface 41 of the second light receiving element 40B faces the second light emitting surface 33B of the third edge light emitting element 30C and the fourth edge light emitting element 30D. The arrangement of the second light receiving element 40B, the third edge light emitting element 30C, and the fourth edge light emitting element 30D may be similar to that of the first embodiment. However, in FIG. 17, due to a change in the number of edge light emitting elements 30 facing one light receiving element 40, for example, the ratio of the Y-direction dimension to the X-direction dimension of each light receiving element 40 differs from that of the first embodiment. As shown in FIG. 17, the second light receiving element 40B is disposed in a position overlapping the third edge light emitting element 30C and the fourth edge light emitting element 30D when viewed from the X direction. In one example, in a planar view, the dimension in the Y direction of the second light receiving element 40B is greater than the sum of the dimension in the Y direction of the third edge surface light emitting element 30C, the dimension in the Y direction of the fourth edge surface light emitting element 30D, and the distance in the Y direction between the third edge surface light emitting element 30C and the fourth edge surface light emitting element 30D.

[0178] The light receiving regions 49 of the second light receiving element 40B are provided in accordance with the number of edge light emitting elements 30. That is, the second light receiving element 40B has two light receiving regions 49, and each light receiving region 49 faces the emission region 36 of the third edge light emitting element 30C and the fourth edge light emitting element 30D. The arrangement of the light receiving regions 49 of the second light receiving element 40B and the emission regions 36 of the third edge light emitting element 30C and the fourth edge light emitting element 30D is the same as, for example, in the first embodiment.

[0179] The first light receiving element 40A and the second light receiving element 40B each have two first light receiving electrodes 47A and one second light receiving electrode 47B. Although not shown, the first light receiving electrode 47A of each of the first light receiving elements 40A and 40B is mounted on the second surface electrode 62S, and the second light receiving electrode 47B of each of the first light receiving elements 40A and the second light receiving element 40B is mounted on the third surface electrode 63S. As a result, the first light receiving electrode 47A of each of the first light receiving element 40A and the second light receiving element 40B is electrically connected to the second surface electrode 62S, and the second light receiving electrode 47B of each of the first to third light receiving elements 40A to 40C is electrically connected to the third surface electrode 63S.

[0180] The semiconductor light emitting device 10 includes, for example, a sealing member 50 (not shown). Although not shown, the sealing member 50 seals each of the first to fourth edge light emitting elements 30A to 30D and the first and second light receiving elements 40A and 40B. The configuration of the sealing member 50 can be changed as desired, and for example, the semiconductor light emitting device 10 may include the sealing member 50 of the sixth embodiment. Furthermore, the semiconductor light emitting device 10 may include a case 100 (see FIG. 13) instead of the sealing member 50.

[0181] (Third modified example) 18, the semiconductor light emitting device 10 of the third modification example differs from the second modification example in the configuration and arrangement of the fourth surface electrode 64S. The following describes in detail the differences from the semiconductor light emitting device 10 of the second modification example. Furthermore, components common to the semiconductor light emitting device 10 of the second modification example are given the same reference numerals, and detailed description thereof will be omitted.

[0182] The semiconductor light emitting device 10 of the third modification includes one fourth surface electrode 64S. The fourth surface electrode 64S is disposed between the first surface electrodes 61SA-61SD and the second surface electrode 62S in the X direction. The fourth surface electrode 64S is formed in a strip shape extending in the Y direction in a plan view. In the third modification, the fourth surface electrode 64S serves as a common surface electrode (anode electrode) for the first to fourth edge light emitting elements 30A-30D.

[0183] On the other hand, the number of second surface electrodes 62S and third surface electrodes 63S is the same as in each embodiment. That is, the second surface electrodes 62S and the third surface electrodes 63S are common surface electrodes for the first light receiving element 40A and the second light receiving element 40B. Both the second surface electrodes 62S and the third surface electrodes 63S extend along the Y direction.

[0184] The first edge-emitting element 30A is mounted on the first surface electrode 61S. The first light-emitting electrode 34 of the first edge-emitting element 30A is connected to the fourth surface electrode 64S by a wire WA. Therefore, the second light-emitting electrode 35 (see FIG. 3) of the first edge-emitting element 30A is electrically connected to the first surface electrode 61SA, and the first light-emitting electrode 34 of the first edge-emitting element 30A is electrically connected to the fourth surface electrode 64S.

[0185] 18, the wire WA is connected to the first light-emitting electrode 34 of the first edge-emitting element 30A closer to the substrate side surface 25 than the center in the Y direction. In a plan view, the wire WA is formed between the second light-emitting surface 33B of the first edge-emitting element 30A and the second light-emitting surface 33B of the second edge-emitting element 30B in the Y direction. The wire WA passes closer to the substrate side surface 25 than the emission region 36 of the first edge-emitting element 30A in the Y direction and is connected to the fourth surface electrode 64S.

[0186] The second edge-emitting element 30B is mounted on the first surface electrode 61SB. The first light-emitting electrode 34 of the second edge-emitting element 30B is connected to the fourth surface electrode 64S by a wire WB. Therefore, the second light-emitting electrode 35 of the second edge-emitting element 30B is electrically connected to the first surface electrode 61SB, and the first light-emitting electrode 34 of the second edge-emitting element 30B is electrically connected to the fourth surface electrode 64S.

[0187] 18, the wire WB is connected to the first light-emitting electrode 34 of the second edge-surface light-emitting element 30B closer to the substrate side surface 25 than the center in the Y direction. In a plan view, the wire WB is formed between the second light-emitting surface 33B of the second edge-surface light-emitting element 30B and the second light-emitting surface 33B of the third edge-surface light-emitting element 30C in the Y direction. The wire WB passes closer to the substrate side surface 25 than the emission region 36 of the second edge-surface light-emitting element 30B in the Y direction and is connected to the fourth surface electrode 64S.

[0188] The third edge-emitting element 30C is mounted on the first surface electrode 61SC. The first light-emitting electrode 34 of the third edge-emitting element 30C is connected to the fourth surface electrode 64S by a wire WC. Therefore, the second light-emitting electrode 35 of the third edge-emitting element 30C is electrically connected to the first surface electrode 61SC, and the first light-emitting electrode 34 of the third edge-emitting element 30C is electrically connected to the fourth surface electrode 64S.

[0189] 18, the wire WC is connected to the first light-emitting electrode 34 of the third edge-face light-emitting element 30C closer to the substrate side surface 25 than the center in the Y direction. In a plan view, the wire WC is formed between the second light-emitting surface 33B of the third edge-face light-emitting element 30C and the second light-emitting surface 33B of the fourth edge-face light-emitting element 30D in the Y direction. The wire WC passes closer to the substrate side surface 25 than the emission region 36 of the third edge-face light-emitting element 30C in the Y direction and is connected to the fourth surface electrode 64S.

[0190] The fourth edge-emitting element 30D is mounted on the first surface electrode 61SD. The first light-emitting electrode 34 of the fourth edge-emitting element 30D and the fourth surface electrode 64S are connected by a wire WD. Therefore, the second light-emitting electrode 35 of the fourth edge-emitting element 30D is electrically connected to the first surface electrode 61SD, and the first light-emitting electrode 34 of the fourth edge-emitting element 30D is electrically connected to the fourth surface electrode 64S.

[0191] 18, the wire WD is connected to the first light-emitting electrode 34 of the fourth edge-surface light-emitting element 30D closer to the substrate side surface 25 than the center in the Y direction. The wire WD passes through the fourth edge-surface light-emitting element 30D closer to the substrate side surface 25 than the emission region 36 of the fourth edge-surface light-emitting element 30D in the Y direction, and is connected to the fourth surface electrode 64S.

[0192] The wires WA to WD are formed so as not to overlap the emission region 36 when viewed from the X direction. This prevents the wires WA to WD from blocking the laser light emitted from the emission region 36 of the second light emitting surfaces 33B of the first to fourth end surface light emitting elements 30A to 30D.

[0193] The wires WA to WD are all equal in length. Here, if the difference in length between any two of the wires WA to WD is, for example, within 10% of the length of one wire, then the two wires can be said to be all equal in length. Therefore, the paths for supplying current from one fourth surface electrode 64S to the first to fourth edge-light emitting elements 30A to 30D are all equal, and therefore the inductance components in the supply paths for the first to fourth edge-light emitting elements 30A to 30D can be made all equal.

[0194] The number of fourth surface electrodes 64S can be changed as desired. For example, the number of fourth surface electrodes 64S may be two. In this case, one fourth surface electrode 64S serves as a common surface electrode for the first light-emitting electrodes 34 of the edge-emitting elements 30A and 30B, and the other fourth surface electrode 64S serves as a common surface electrode for the first light-emitting electrodes 34 of the edge-emitting elements 30C and 30D. In this case, the two fourth surface electrodes 64S may be arranged, for example, at the same position in the X direction and spaced apart from each other in the Y direction. In another example, the number of fourth surface electrodes 64S may be four. That is, the number of fourth surface electrodes 64S may be the same as the number of the first to fourth edge-emitting elements 30A to 30D. In this case, the four fourth surface electrodes 64S are individually electrically connected to the first light-emitting electrodes 34 of the first to fourth edge-emitting elements 30A to 30D by wires WA to WD. The four fourth surface electrodes 64S may be arranged, for example, at the same positions in the X direction and spaced apart from each other in the Y direction.

[0195] The number of light receiving elements 40 may be four, matching the number of edge light emitting elements 30. (Fourth modified example) As shown in Fig. 19, the semiconductor light emitting device 10 of the fourth modified example has one edge light emitting element 30 having a plurality of emission regions 36, and one light receiving element 40 having a plurality of first light receiving electrodes 47A. In one example, the light receiving element 40 includes the same number of light receiving regions 49 as the emission regions 36 of the edge light emitting element 30. In the example shown in Fig. 19, the edge light emitting element 30 has four emission regions 36, and the light receiving element 40 has four light receiving regions 49. In the example shown in Fig. 19, the light receiving element 40 has four first light receiving electrodes 47A.

[0196] The edge light emitting element 30 has four emission regions 36 arranged at a distance from one another in the Y direction. Therefore, the edge light emitting element 30 is formed in a rectangular shape with the Y direction as the longitudinal direction and the X direction as the lateral direction in a plan view. The edge light emitting element 30 includes first light emitting electrodes 34 in a number corresponding to the number of emission regions 36. In the third modified example, the edge light emitting element 30 includes four first light emitting electrodes 34. The four first light emitting electrodes 34 are arranged at a distance from one another in the Y direction.

[0197] The light receiving element 40 has four light receiving regions 49 arranged at intervals in the Y direction. Therefore, the light receiving element 40 is formed in a rectangular shape with the Y direction as the longitudinal direction and the X direction as the lateral direction in a plan view. In one example, the dimension of the light receiving element 40 in the Y direction may be equal to or greater than the dimension of the edge light emitting element 30 in the Y direction.

[0198] 19, the semiconductor light emitting device 10 of the fourth modification includes two fourth surface electrodes 64SA, 64SB. Meanwhile, the numbers of first surface electrodes 61S, second surface electrodes 62S, and third surface electrodes 63S are the same as those of the other embodiments. The first surface electrode 61S is formed in a rectangular shape with its longitudinal direction in the Y direction and its lateral direction in the X direction according to the size of the edge light emitting element 30. Both the second surface electrode 62S and the third surface electrode 63S are formed in a strip shape extending in the Y direction.

[0199] In one example, the first surface electrode 61S and the fourth surface electrodes 64SA and 64SB are arranged in positions that overlap each other when viewed from the Y direction, and the first surface electrode 61S is arranged between the fourth surface electrodes 64SA and 64SB in the Y direction. Both the second surface electrode 62S and the third surface electrode 63S are formed in a strip shape extending in the Y direction.

[0200] The edge-emitting element 30 is mounted on the first surface electrode 61S. The four first light-emitting electrodes 34 are individually connected to the fourth surface electrode 64SA and the fourth surface electrode 64SB by wires WA to WD. More specifically, of the four first light-emitting electrodes 34, two first light-emitting electrodes 34 closest to the fourth surface electrode 64SA are individually connected to the fourth surface electrode 64SA by wires WA and WB. The remaining two first light-emitting electrodes 34 closest to the fourth surface electrode 64SB are individually connected to the fourth surface electrode 64SB by wires WC and WD. Therefore, the second light-emitting electrode 35 (see FIG. 3) of the edge-emitting element 30 is electrically connected to the first surface electrode 61S, and the first light-emitting electrode 34 of the edge-emitting element 30 is electrically connected to the fourth surface electrode 64SA and the fourth surface electrode 64SB.

[0201] The arrangement of the edge light emitting element 30 and the light receiving element 40 may be the same as in the first embodiment. As shown in Fig. 19, the light receiving element 40 is arranged at a position overlapping the edge light emitting element 30 when viewed from the X direction.

[0202] The four first light-receiving electrodes 47A of the light-receiving element 40 are mounted on the second surface electrode 62S, and the second light-receiving electrode 47B of the light-receiving element 40 is mounted on the third surface electrode 63S. As a result, the four first light-receiving electrodes 47A of the light-receiving element 40 are electrically connected to the second surface electrode 62S, and the second light-receiving electrode 47B of the light-receiving element 40 is electrically connected to the third surface electrode 63S. The number of second light-receiving electrodes 47B may be four, matching the number of first light-receiving electrodes 47A.

[0203] The semiconductor light emitting device 10 includes, for example, a sealing member 50 (not shown). Although not shown, the sealing member 50 seals each of the edge light emitting element 30 and the light receiving element 40. The configuration of the sealing member 50 can be changed as desired, and for example, the semiconductor light emitting device 10 may include the sealing member 50 of the sixth embodiment. Furthermore, the semiconductor light emitting device 10 may include a case 100 (see FIG. 13) instead of the sealing member 50.

[0204] (Fifth modified example) 20, the semiconductor light emitting device 10 of the fifth modification has a different configuration and arrangement of the fourth surface electrode 64S compared to the semiconductor light emitting device 10 of the fourth modification. Differences from the semiconductor light emitting device 10 of the fourth modification will be described in detail below. Components common to the semiconductor light emitting device 10 of the fourth modification will be assigned the same reference numerals, and detailed description thereof will be omitted.

[0205] The semiconductor light emitting device 10 of the fifth modification includes one fourth surface electrode 64S. The fourth surface electrode 64S is disposed between the first surface electrode 61S and the second surface electrode 62S in the X direction.

[0206] As in the fourth modified example, the edge light emitting element 30 has four emission regions 36, and the light receiving element 40 has four light receiving regions 49. The light receiving element 40 has four first light receiving electrodes 47A.

[0207] The four first light-emitting electrodes 34 of the edge light-emitting element 30 and one fourth surface electrode 64S are individually connected by four wires WA to WD. 20, the wires WA to WD are connected to a position closer to the substrate side surface 25 than the center in the Y direction of the first light-emitting electrode 34 of the edge-surface light-emitting element 30. The wires WA to WC are formed between two second light-emitting surfaces 33B that are adjacent in the Y direction in a plan view. The wires WA to WD pass closer to the substrate side surface 25 than each emission region 36 of the edge-surface light-emitting element 30 in the Y direction and are connected to the fourth surface electrode 64S.

[0208] In the semiconductor light-emitting device 10 of this fifth modification, similarly to the semiconductor light-emitting device 10 of the third modification shown in FIG. 18, the wires WA-WD are formed so as not to overlap with the plurality of emission regions 36 of the second light-emitting surface 33B of the edge-emitting elements 30. This prevents the wires WA-WD from blocking the laser light emitted from the emission regions 36 of the second light-emitting surfaces 33B of the first to fourth edge-emitting elements 30A-30D. Furthermore, in the semiconductor light-emitting device 10 of this fifth modification, the lengths of the wires WA-WD are equal to each other. This allows the inductance components of the current supply paths to the plurality of first light-emitting electrodes 34 of the edge-emitting elements 30 to be equal to each other.

[0209] (Sixth modified example) 21, the semiconductor light emitting device 10 of the sixth modified example differs from the semiconductor light emitting device 10 of the fourth modified example in the configuration and arrangement of the fourth surface electrode 64S. The following describes in detail the differences from the semiconductor light emitting device 10 of the fourth modified example. Furthermore, components common to the semiconductor light emitting device 10 of the fourth modified example are given the same reference numerals, and detailed description thereof will be omitted.

[0210] The semiconductor light emitting device 10 of the sixth modified example includes one fourth surface electrode 64S. The fourth surface electrode 64S is arranged on the opposite side of the light receiving element 40 from the edge light emitting element 30. The fourth surface electrode 64S is arranged closer to the substrate side surface 23 than the edge light emitting element 30 and the light receiving element 40. The fourth surface electrode 64S is arranged separated from the third surface electrode 63S in a plan view. In one example, the fourth surface electrode 64S is formed in a strip shape extending in the Y direction.

[0211] The edge light emitting element 30 is mounted on the first surface electrode 61S. The four first light emitting electrodes 34 of the edge light emitting element 30 are connected to the fourth surface electrode 64S by four wires W, respectively.

[0212] The multiple wires W that electrically connect each first light-emitting electrode 34 of the edge-emitting element 30 to the fourth surface electrode 64S are formed to extend in the X direction from each first light-emitting electrode 34. The multiple wires W have the same length. Here, if the difference in length between two wires W is, for example, within 10% of the length of one wire W, then the lengths of the two wires W can be said to be equal to each other.

[0213] 22, the wire W electrically connecting the first light-emitting electrode 34 of the edge-emitting element 30 and the fourth surface electrode 64S is arranged to pass between the light-receiving element 40 and the sealing surface 51 in the Z direction. It can be said that the wire W is arranged to pass on the opposite side of the light-receiving element 40 from the substrate 20 on which the light-receiving element 40 is mounted.

[0214] When the case 100 (see FIG. 13) is used for the sixth modified example, the wire W is arranged to pass between the light receiving element 40 and the case 100. The number of edge light emitting elements 30 can be changed as desired. In one example, four edge light emitting elements 30 may be provided. In this case, each edge light emitting element 30 may be provided with one first light emitting electrode 34 and one emission region 36.

[0215] The number of fourth surface electrodes 64S can be changed arbitrarily. In one example, the number of fourth surface electrodes 64S may be four. In this case, each fourth surface electrode 64S is a surface electrode connected to one of the four first light-emitting electrodes 34 of the edge-emitting element 30. In this case, the four fourth surface electrodes 64S are arranged, for example, at the same position in the X direction and spaced apart from each other in the Y direction.

[0216] In the first to eighth embodiments and their modifications, the arrangement of the fourth surface electrodes 64S can be changed as desired. In the first to eighth embodiments and each modified example, the position where the wire W is connected to the first light-emitting electrode 34 of the edge-emitting element 30 and the position where the wire W is connected to the fourth surface electrode 64S can be changed as desired. In the first to eighth embodiments and the first to fifth modified examples, the wire W only needs to be formed at a position that does not overlap with the emission region 36 when viewed from the X direction.

[0217] In the first to eighth embodiments, the positional relationship between the edge-emitting element 30 and the first surface electrode 61S can be changed as desired. For example, in the first to sixth and eighth embodiments, the first surface electrode 61S may be formed so as not to protrude from the second light-emitting surface 33B of the edge-emitting element 30 toward the light-receiving element 40 in plan view.

[0218] In the first to eighth embodiments, the positional relationship between the light receiving element 40 and the second surface electrode 62S can be changed as desired. For example, in the first to sixth and eighth embodiments, the second surface electrode 62S may be formed so as not to protrude from the second element surface 41 of the light receiving element 40 toward the edge light emitting element 30 in plan view.

[0219] In the first to third and seventh embodiments, the sealing member 50 may be omitted. In each embodiment, the semiconductor light emitting device 10 is not limited to a surface-mounted package structure. The semiconductor light emitting device 10 may have a configuration in which the edge light emitting element 30 and the light receiving element 40 are mounted on a plurality of lead frames instead of the substrate 20, the first to fourth front surface electrodes 61S to 64S, and the first to fourth back surface electrodes 61R to 64R. In this case, the semiconductor light emitting device 10 may include, for example, a sealing member 50 that seals the edge light emitting element 30 and the light receiving element 40 and also partially seals each lead frame. The portions of each lead frame exposed from the sealing member 50 constitute external terminals.

[0220] One or more of the various examples described herein may be combined to the extent that they are not technically inconsistent. Terms such as "first," "second," and "third" in this disclosure are used merely to distinguish between objects and do not rank the objects.

[0221] In this specification, "at least one of A and B" should be understood to mean "A only, or B only, or both A and B." The term "on" as used in this disclosure includes the meanings of "on" and "above" unless the context clearly indicates otherwise. Thus, for example, the expression "a first element is disposed on a second element" means that in some embodiments, the first element may be disposed directly on the second element in contact with the second element, while in other embodiments, the first element may be disposed above the second element without contacting the second element. In other words, the term "on" does not exclude a structure in which another element is formed between the first element and the second element.

[0222] The Z direction used in this disclosure does not necessarily have to be the vertical direction, nor does it have to completely coincide with the vertical direction. Therefore, various structures according to this disclosure are not limited to the "up" and "down" of the Z direction described herein being "up" and "down" of the vertical direction. For example, the X direction may be the vertical direction, or the Y direction may be the vertical direction.

[0223] <Additional Notes> The technical ideas that can be understood from the present disclosure are described below. Note that, for the purpose of aiding understanding and not intending to be limiting, the components described in the appendices are given the reference numerals of the corresponding components in the above embodiment. The reference numerals are shown as examples to aid understanding, and the components described in each appendix should not be limited to the components indicated by the reference numerals.

[0224] [Appendix 1] a substrate (20) having a substrate surface (21); a first surface electrode (61S), a second surface electrode (62S), and a third surface electrode (63S) formed on the substrate surface (21); an edge light emitting element (30) having a first light emitting surface (33A) facing a direction intersecting a thickness direction (Z direction) perpendicular to the substrate surface (21) and a second light emitting surface (33B) facing a direction opposite to the first light emitting surface (33A), and electrically connected to the first surface electrode (61S); a light-receiving element (40) having a second element surface (41) including a light-receiving region (49), the second element surface (41) being disposed opposite the second light-emitting surface (33B) and electrically connected to the second surface electrode (62S) and the third surface electrode (63S); A semiconductor light emitting device (10) comprising:

[0225] [Appendix 2] The light receiving element (40) a second element back surface (42) opposite to the second element front surface (41); a first light-receiving electrode (47A) formed on the second element surface (41); a second light-receiving electrode (47B) formed on the second element rear surface (42); Including, the first light-receiving electrode (47A) is electrically connected to the second surface electrode (62S); The second light-receiving electrode (47B) is electrically connected to the third surface electrode (63S). 2. The semiconductor light emitting device of claim 1.

[0226] [Appendix 3] The light receiving element (40) a second element back surface (42) opposite to the second element front surface (41); a first light-receiving electrode (47A) and a second light-receiving electrode (47B) formed spaced apart from each other on the second element rear surface (42); Including, the first light-receiving electrode (47A) is electrically connected to the second surface electrode (62S); The second light-receiving electrode (47B) is electrically connected to the third surface electrode (63S). 2. The semiconductor light emitting device of claim 1.

[0227] [Appendix 4] The edge light emitting element (30) is a first element surface (31) facing the same side as the substrate surface (21); a first element back surface (32) facing the opposite side to the first element front surface (31); a first light-emitting electrode (34) formed on the first element surface (31); a second light-emitting electrode (35) formed on the rear surface (32) of the first element; Including, The second light-emitting electrode (35) of the edge-emitting element (30) is electrically connected to the first surface electrode (61S). 4. The semiconductor light-emitting device according to claim 2 or 3.

[0228] [Appendix 5] The device further includes a submount substrate (90) interposed between the first surface electrode (61S) and the edge light emitting element (30) in the thickness direction (Z direction) and in contact with the first surface electrode (61S) and the second light emitting electrode (35). 5. The semiconductor light emitting device according to claim 4.

[0229] [Appendix 6] The submount substrate (90) is made of a conductive material. 6. The semiconductor light-emitting device according to claim 5.

[0230] [Appendix 7] The submount substrate (90) is made of an insulating material, The submount substrate (90) includes a through-hole wiring that penetrates the submount substrate (90) in the thickness direction (Z direction) of the submount substrate (90). 6. The semiconductor light-emitting device according to claim 5.

[0231] [Appendix 8] the second light-emitting surface (33B) includes an emission region (36), The light receiving area (49) faces the light emitting area (36). 8. The semiconductor light emitting device according to any one of claims 1 to 7.

[0232] [Appendix 9] The area of ​​the light receiving region (49) is larger than the area of ​​the light emitting region (36). 10. The semiconductor light-emitting device (10) according to claim 8.

[0233] [Appendix 10] The center of the light receiving area (49) faces the light emitting area (36). 10. The semiconductor light emitting device according to claim 9.

[0234] [Appendix 11] The size of the light receiving region (49) in the thickness direction (Z direction) is larger than the size of the second light emitting surface (33B) in the thickness direction (Z direction). 11. The semiconductor light-emitting device according to claim 9 or 10.

[0235] [Appendix 12] The light-emitting element further includes a sealing member (50) that seals at least a portion of the edge-emitting element (30) and the light-receiving element (40). 12. The semiconductor light emitting device according to any one of claims 1 to 11.

[0236] [Appendix 13] The sealing member (50) exposes the first light emitting surface (33A) of the edge light emitting element (30). 13. The semiconductor light emitting device of claim 12.

[0237] [Appendix 14] The sealing member (50) is made of a material that blocks visible light, The edge light emitting element (30) is configured to emit laser light having a wavelength different from that of the visible light. 14. The semiconductor light-emitting device according to claim 12 or 13.

[0238] [Appendix 15] The sealing member (50) has a sealing surface (51) facing the same side as the substrate surface (21), When viewed from the thickness direction (Z direction), a light-shielding layer (120) is provided on the sealing surface (51) between the second light-emitting surface (33B) and the second element surface (41). 15. The semiconductor light emitting device according to any one of claims 12 to 14.

[0239] [Appendix 16] The sealing member (50) includes a plurality of diffusing materials (72) that diffuse the laser light emitted by the edge light emitting element (30). 16. The semiconductor light emitting device according to any one of claims 12 to 15.

[0240] [Appendix 17] The edge light emitting element (30) is configured so that the output of the laser light emitted from the second light emitting surface (33B) is smaller than the output of the laser light emitted from the first light emitting surface (33A). 17. The semiconductor light emitting device according to any one of claims 1 to 16.

[0241] [Appendix 18] The substrate (20) has a substrate back surface (22) facing the opposite side to the substrate front surface (21) in the thickness direction (Z direction), The back surface electrodes (61R to 64R) formed on the back surface (22) of the substrate are included. 18. The semiconductor light emitting device according to any one of claims 1 to 17.

[0242] [Appendix 19] the first surface electrode (61S) includes a first protruding portion (131) protruding from the second light-emitting surface (33B) toward the light-receiving element (40) when viewed from the thickness direction (Z direction), the second surface electrode (62S) includes a second protruding portion (132) that protrudes from the second element surface (41) toward the edge light emitting element (30) when viewed in the thickness direction (Z direction), an anti-reflection layer (140) covering both the first protrusion (131) and the second protrusion (132); 5. The semiconductor light emitting device according to claim 4.

[0243] [Appendix 20] a first conductive bonding material (SD1) that bonds the second light-emitting electrode (35) and the first surface electrode (61S) to each other is provided on the first protruding portion (131); a second conductive bonding material (SD2) that bonds the first light-receiving electrode (47A) and the second surface electrode (62S) to each other is provided on the second protruding portion (132); The anti-reflection layer (140) covers both the first conductive bonding material (SD1) and the second conductive bonding material (SD2). 20. The semiconductor light emitting device of claim 19.

[0244] [Appendix 21] the fourth surface electrode (64S) formed on the substrate surface (21); a wire (W) connecting the first light-emitting electrode (34) and the fourth surface electrode (64S); further comprising The position of the wire (W) is different from the emission regions (36) of the first light-emitting surface (33A) and the second light-emitting surface (33B) when viewed from the arrangement direction of the first light-emitting surface (33A) and the second light-emitting surface (33B). 5. The semiconductor light emitting device according to claim 4.

[0245] [Appendix 22] The case (100) is provided on the substrate surface (21) and houses an edge light emitting element (30) and a light receiving element (40). 12. The semiconductor light emitting device according to any one of claims 1 to 11.

[0246] [Appendix 23] The case (100) is made of a material that blocks visible light, The edge light emitting element (30) is configured to emit laser light having a wavelength different from that of the visible light. 23. The semiconductor light-emitting device of claim 22.

[0247] [Appendix 24] The case (100) is made of a light-shielding material and includes an opening through which the laser light emitted from the first light-emitting surface (33A) passes. 24. The semiconductor light-emitting device according to claim 22 or 23.

[0248] [Appendix 25] The case (100) includes a side wall (102) disposed opposite the first light-emitting surface (33A), the side wall (102) is made of a material that can transmit the laser light emitted from the first light-emitting surface (33A); A light diffusion portion (104) for diffusing the laser light is formed in the region of the side wall (102) through which the laser light passes. 24. The semiconductor light-emitting device according to claim 22 or 23.

[0249] [Appendix 26] The thickness (LX1) of the light receiving element (40) is greater than the thickness (LZ1) of the submount substrate (90). 8. The semiconductor light emitting device according to any one of claims 5 to 7.

[0250] [Appendix 27] The first element side surface (43) of the light receiving element (40) is located on the opposite side of the first element surface (31) of the edge light emitting element (30) from the substrate (20). 27. The semiconductor light emitting device according to any one of claims 1 to 26.

[0251] [Appendix 28] The arrangement direction of the first light emitting surface (33A) and the second light emitting surface (33B) is defined as a first direction (X direction), and the direction perpendicular to the first direction (X direction) when viewed from the thickness direction (Z direction) is defined as a second direction (Y direction), The edge light emitting element (30) includes a plurality of edge light emitting elements (30A to 30C) arranged at a distance from each other in the second direction (Y direction), The light receiving element includes a plurality of light receiving elements (40A to 40C) arranged at intervals in the second direction (Y direction). 2. The semiconductor light emitting device of claim 1.

[0252] [Appendix 29] The light receiving regions (49) of the plurality of light receiving elements (40A to 40C) are disposed individually facing the second light emitting surfaces (33B) of the plurality of edge light emitting elements (30A to 30C) in the first direction (X direction). 29. The semiconductor light-emitting device of claim 28.

[0253] [Appendix 30] the number of the light receiving elements (40A, 40B) is less than the number of the edge light emitting elements (30A to 30D); One of the light receiving elements (40A / 40B) is disposed so as to face the second light emitting surfaces (33B) of the plurality of edge light emitting elements (30A, 30B / 30C, 30D) in common. 30. The semiconductor light-emitting device of claim 29.

[0254] [Appendix 31] The dimension of the light receiving region (49) in the second direction (Y direction) is greater than the dimension of the light receiving region (49) in the thickness direction (Z direction). 12. The semiconductor light emitting device according to any one of claims 8 to 11.

[0255] [Appendix 32] a plurality of the edge light emitting elements (30A to 30D) arranged at a distance from each other in the second direction (Y direction); the wires (W) include a plurality of wires (WA to WD) that electrically connect the first light-emitting electrodes (34) and the fourth surface electrodes (64S) of the plurality of edge-emitting elements (30A to 30D), The fourth surface electrode (64S) is disposed between the plurality of edge light emitting elements (30A to 30D) and the light receiving elements (40A, 40B). 22. The semiconductor light emitting device of claim 21.

[0256] [Appendix 33] The plurality of wires (WA to WD) are arranged at positions that do not overlap with the emission regions (36) of the plurality of edge light emitting elements (30A to 30D) when viewed from the first direction (X direction). 33. The semiconductor light emitting device of claim 32.

[0257] [Appendix 34] The edge light emitting element (30) includes a plurality of the first light emitting electrodes (34) arranged spaced apart from each other in the second direction (Y direction), the wires (W) include a plurality of wires (WA to WD) that electrically connect the plurality of first light-emitting electrodes (34) of the edge-emitting element (30) to the fourth surface electrode (64S); The fourth surface electrode (64S) is disposed on the opposite side of the light receiving element (40) from the edge light emitting element (30). 22. The semiconductor light emitting device of claim 21.

[0258] [Appendix 35] The plurality of wires (WA to WD) are arranged to pass through the light receiving element (40) on the opposite side to the substrate (20). 35. The semiconductor light emitting device of claim 34.

[0259] The above description is merely illustrative. Those skilled in the art will recognize that many more possible combinations and permutations are possible other than the components and methods (manufacturing processes) listed for the purpose of illustrating the technology of the present disclosure. The present disclosure is intended to embrace all alternatives, modifications, and variations that fall within the scope of the present disclosure, including the claims. [Explanation of symbols]

[0260] 10...Semiconductor light-emitting device 20...Substrate 21...Substrate surface 22...Back of the board 23~26...1st~4th board side 30, 30A to 30D...Edge light emitting device 31...First element surface 32...Back side of first element 33A...First light-emitting surface 33B...Second light-emitting surface 34...First light-emitting electrode 35...Second light-emitting electrode 36...Emission area 37...Semiconductor substrate 38A...Board surface 38B...Back of the board 40, 40A to 40C...Photodetector 41...Second element surface 42...Back side of second element 43-46: Sides of the first to fourth elements 47A…1st light receiving electrode 47B…Second light receiving electrode 49…Light receiving area 50...Sealing member 51...Sealing surface 53~56...1st~4th sealing side 61S,61SA~61SD…1st surface electrode 62S…Second surface electrode 63S…Third surface electrode 64S,64SA~64SC…4th surface electrode 61R…1st back electrode 62R...Second rear electrode 63R...Third rear electrode 64R…4th back electrode 65...First via 66...Second via 67...3rd via 72...Diffusion material 80...Semiconductor layer 81…Surface 82…Active layer 83...n-side guide layer 84...p-side guide layer 85...n-type semiconductor layer 85A...n-type cladding layer 86...p-type semiconductor layer 86A...First p-type cladding layer 86B...first p-type etching stop layer 86C: Second p-type cladding layer 86D...Second p-type etching stop layer 86E...p-type cap layer 86F...p-type contact layer 87...Ridge 88...Current confinement layer 90...Submount substrate 91...Submount surface 92...Submount backside 100…cases 101...Upper wall 102…Side wall 104...Light diffusion section 120...Light blocking layer 131...First protruding part 132...Second protrusion 140...Anti-reflection layer 141…Anti-reflection layer surface SD: Conductive adhesive SD1: First conductive adhesive material SD2…Second conductive bonding material SC…Closed space W, WA~WD...Wire LX1: Thickness of the light receiving element LZ1: Submount substrate thickness

Claims

1. a substrate having a substrate surface; a first surface electrode, a second surface electrode, and a third surface electrode formed on a surface of the substrate; an edge light emitting element having a first light emitting surface facing a direction intersecting a thickness direction perpendicular to the substrate surface and a second light emitting surface facing an opposite direction to the first light emitting surface, the edge light emitting element being electrically connected to the first surface electrode; a light receiving element having a second element surface including a light receiving region, the second element surface being disposed opposite the second light emitting surface and electrically connected to the second surface electrode and the third surface electrode; A semiconductor light emitting device comprising:

2. The light receiving element is a second element back surface opposite to the second element front surface; A first light receiving electrode formed on a surface of the second element; a second light receiving electrode formed on a rear surface of the second element; Including, the first light receiving electrode is electrically connected to the second surface electrode; the second light receiving electrode is electrically connected to the third surface electrode; The semiconductor light emitting device according to claim 1 .

3. The light receiving element is a second element back surface opposite to the second element front surface; a first light receiving electrode and a second light receiving electrode formed on a rear surface of the second element and spaced apart from each other; Including, the first light receiving electrode is electrically connected to the second surface electrode; the second light receiving electrode is electrically connected to the third surface electrode; The semiconductor light emitting device according to claim 1 .

4. The edge light emitting device is a first element surface facing the same direction as the substrate surface; a first element back surface facing the opposite side to the first element front surface; A first light-emitting electrode formed on a surface of the first element; a second light-emitting electrode formed on a rear surface of the first element; Including, The second light-emitting electrode of the edge light-emitting device is electrically connected to the first surface electrode.

4. The semiconductor light emitting device according to claim 2.

5. the edge light emitting device further includes a submount substrate interposed between the first surface electrode and the edge light emitting device in the thickness direction and in contact with the first surface electrode and the second light emitting electrode. The semiconductor light emitting device according to claim 4 .

6. The submount substrate is made of a conductive material. The semiconductor light emitting device according to claim 5 .

7. the submount substrate is made of an insulating material, a through-wiring that passes through the submount substrate in the thickness direction; The semiconductor light emitting device according to claim 5 .

8. The second light emitting surface includes an emission area, The light receiving region faces the light emitting region. The semiconductor light emitting device according to claim 1 .

9. The area of ​​the light receiving region is larger than the area of ​​the light emitting region. The semiconductor light emitting device according to claim 8 .

10. The center of the light receiving region faces the light emitting region. The semiconductor light emitting device according to claim 9 .

11. The size of the light receiving region in the thickness direction is larger than the size of the second light emitting surface in the thickness direction. The semiconductor light emitting device according to claim 9 .

12. The light receiving element further includes a sealing member that seals at least a part of the edge light emitting element and the light receiving element. The semiconductor light emitting device according to claim 1 .

13. The sealing member exposes the first light emitting surface of the edge light emitting element. The semiconductor light emitting device according to claim 12.

14. The sealing member is formed of a material that blocks visible light, The edge light emitting device is configured to emit laser light having a wavelength different from that of the visible light. The semiconductor light emitting device according to claim 12.

15. the sealing member has a sealing surface facing the same side as the substrate surface; When viewed from the thickness direction, a light-shielding layer is provided on the sealing surface between the second light-emitting surface and the second element surface. The semiconductor light emitting device according to claim 12.

16. A plurality of diffusion materials are provided in the sealing member to diffuse the laser light emitted by the edge light emitting element. The semiconductor light emitting device according to claim 12.

17. The edge light emitting device is configured so that the output of the laser light emitted from the second light emitting surface is smaller than the output of the laser light emitted from the first light emitting surface. The semiconductor light emitting device according to claim 1 .

18. the substrate has a substrate back surface facing the opposite side to the substrate front surface in the thickness direction, A back electrode formed on the back surface of the substrate The semiconductor light emitting device according to claim 1 .

19. the first surface electrode includes a first protruding portion protruding from the second light emitting surface toward the light receiving element when viewed in the thickness direction, the second surface electrode includes a second protruding portion protruding from the second element surface toward the edge light emitting element when viewed in the thickness direction, an anti-reflection layer covering both the first protruding portion and the second protruding portion; The semiconductor light emitting device according to claim 4 .

20. a first conductive bonding material that bonds the second light-emitting electrode and the first surface electrode to each other is provided in the first protruding portion; a second conductive bonding material is provided in the second protruding portion to bond the first light receiving electrode and the second surface electrode to each other; The anti-reflection layer covers both the first conductive bonding material and the second conductive bonding material.

20. The semiconductor light emitting device according to claim 19.

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