Light-emitting device

Abstract

To provide a display device, and an electronic apparatus or an illumination device which are less easy to break.SOLUTION: The display device is bendable and is formed by overlapping a first flexible substrate and a second flexible substrate with a transistor via an adhesive layer. The bending of the display device is done so that the first substrate is on the inner side (the valley side) and the second substrate is on the outer side (the mountain side).SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to an article, a method, or a manufacturing method. , manufacture, or composition of matter. One embodiment of the present invention is a light-emitting device, a display device, an electronic device, a lighting device, or a manufacturing method thereof. In particular, the electroluminescence (Electr Light-emitting devices and display devices that utilize the EL phenomenon, The present invention relates to electronic devices, lighting devices, or methods of making, using, operating, etc. [Background technology]

[0002] In recent years, light-emitting devices and display devices are expected to be used for a variety of purposes, and diversification is required. There are.

[0003] For example, in light-emitting devices and display devices for use in portable devices, etc., the devices are required to be thin and lightweight. It is also required that the material be resistant to damage.

[0004] In addition, light-emitting elements that utilize the EL phenomenon (also referred to as EL elements) can be easily made thin and lightweight, and the input signal It has features such as high-speed response to signals and the ability to be driven by a low-voltage DC power supply. Applications to display devices are currently being considered.

[0005] For example, Patent Document 1 discloses a film substrate on which transistors and organic EL display devices are mounted. A flexible active matrix display device having an EL element is disclosed. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2003-174153 A Summary of the Invention [Problem to be solved by the invention]

[0007] One embodiment of the present invention is to provide a display device, electronic device, or lighting device that is highly portable. One of the objectives of the organization is to

[0008] Another embodiment of the present invention is to provide a display device, an electronic device, or a lighting device with high reliability. One of the objectives of the Society is to

[0009] Another embodiment of the present invention provides a display device, an electronic device, or a lighting device that is not easily damaged. One of the objectives of the Society is to

[0010] Another embodiment of the present invention provides a display device, an electronic device, or a lighting device with low power consumption. One of the objectives of the Society is to

[0011] Another embodiment of the present invention is to provide a novel display device, electronic device, or lighting device. One of the objectives of the organization is to [Means for solving the problem]

[0012] A flexible first substrate and a flexible second substrate on which a transistor is formed are The display device is laminated with the adhesive layer therebetween to form a bendable display device. In other words, the display device is bent in a direction in which the second substrate faces outward (mountain side). The first substrate is bent inward (toward the valley side).

[0013] One embodiment of the present invention is a semiconductor device including a first substrate and a second substrate having a transistor. A display device in which a substrate and a second substrate are superimposed via an adhesive layer, the display device having a bent portion. In the bent portion, the first substrate is located on the inside and the second substrate is located on the outside. This is a display device.

[0014] One embodiment of the present invention is a semiconductor device including a first substrate and a second substrate having a transistor. A display device in which a substrate and a second substrate are superimposed via an adhesive layer, the display device having a plurality of bent portions In the plurality of bent portions, the first substrate is located on the inner side and the second substrate is located on the outer side. The display device is characterized in that

[0015] One embodiment of the present invention is a flexible LCD device having a first substrate and a second substrate having a transistor. In the display device, when the display device is bent, the first substrate is on the inside at the bending portion, It is characterized by being bent so that the second substrate faces outward.

[0016] A flexible substrate is used as the first substrate. A flexible substrate is used as the second substrate. By using such a substrate, it is possible to provide a display device that is not easily broken. Alternatively, a lightweight display device can be provided. Alternatively, a display device that is easy to bend can be provided. can be provided.

[0017] In addition, on the second substrate on which the transistors and the like are formed, a Wiring is also formed for transmitting signals to the transistors. The wiring for supplying the power is preferably formed in a lattice shape. The second substrate on which the above-mentioned are formed has a higher mechanical strength than the first substrate.

[0018] Therefore, when the display device is bent, the second substrate is bent so as to be on the outer side (mountain side) of the bent portion. This makes the display less likely to be damaged even if it is repeatedly bent and extended, Reliability can be improved. Effect of the Invention

[0019] One embodiment of the present invention is to provide a display device, electronic device, or lighting device that is highly portable. This can be done.

[0020] Another embodiment of the present invention is to provide a display device, an electronic device, or a lighting device with high reliability. It is possible.

[0021] Another embodiment of the present invention provides a display device, an electronic device, or a lighting device that is not easily damaged. It is possible.

[0022] Another embodiment of the present invention provides a display device, an electronic device, or a lighting device with low power consumption. It is possible.

[0023] Another embodiment of the present invention is to provide a novel display device, electronic device, or lighting device. This can be done. [Brief description of the drawings]

[0024] [Figure 1] 1A to 1C are diagrams illustrating one embodiment of a display device. [Diagram 2] 1A and 1B are a block diagram and a circuit diagram illustrating one embodiment of a display device. [Diagram 3] FIG. 13 is a diagram showing an example of a display device in a bent state. [Figure 4] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Diagram 5] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 6] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 7] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 8] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 9] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 10] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 11] 1A to 1C are diagrams illustrating one embodiment of a display device. [Figure 12] 1A to 1C illustrate examples of the structure of a light-emitting element. [Figure 13] 1A to 1C illustrate examples of electronic devices and lighting devices. [Figure 14] 1A to 1C are diagrams illustrating examples of electronic devices. [Figure 15] 1A to 1C are diagrams illustrating one embodiment of a display device. [Figure 16] 1A to 1C are diagrams illustrating one embodiment of a display device. [Figure 17] 1A to 1C are diagrams illustrating one embodiment of a display device. [Figure 18] 1A to 1C are diagrams illustrating one embodiment of a display device. [Figure 19] FIG. 1 is a diagram showing an example of a cross section of a display device in a bent state. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0025] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the above-mentioned invention can be obtained by the following embodiments. The present invention should not be construed as being limited to the contents described below. The same reference numerals are used in different drawings to indicate the same parts or parts having similar functions. A repeated explanation will be omitted.

[0026] In each figure described in this specification, the size, layer thickness, or area of ​​each component is based on the actual size and thickness of the layer. In some cases, the details may be exaggerated or abbreviated for clarity. In particular, in top and perspective views, some parts may be drawn in a simplified manner to make the drawings easier to understand. Description of components may be omitted.

[0027] In addition, the position, size, range, etc. of each component shown in the drawings are for the purpose of facilitating understanding of the invention. Therefore, the actual location, size, range, etc. may not be shown. The invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings. For example, In the actual manufacturing process, resist masks, etc., may be unintentionally damaged by etching or other processes. However, in order to make it easier to understand, these may be omitted.

[0028] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. It does not indicate any order or ranking, such as the order of processes or stacking. In addition, even if a term is not accompanied by an ordinal number in this specification, etc., it is possible to confuse the constituent elements. In order to avoid this, ordinal numbers may be used in the claims.

[0029] In addition, the terms "electrode" and "wiring" used in this specification and the like do not limit the functionality of these components. For example, an "electrode" may be used as part of a "wire." In addition, the term "electrode" or "wiring" may be used to refer to the plural "electrodes" or "wirings". This also includes cases where the "line" is formed as a single unit.

[0030] In this specification, the terms "above" and "below" refer to the positional relationship of components directly above or below each other. For example, "the electrode on insulating layer A is directly in contact with the insulating layer A" is not limited to the above. If the expression is "electrode B", it is not necessary for electrode B to be formed directly on insulating layer A. The inclusion of other components between the edge layer A and the electrode B is not excluded.

[0031] The source and drain functions may also be different in some cases, such as when transistors of different polarities are used, or when When the direction of the current changes during operation of the circuit, the two are interchangeable depending on the operating conditions. Therefore, it is difficult to determine which is the source and which is the drain. In this specification, the terms source and drain may be used interchangeably. It shall be so.

[0032] In addition, in this specification, "electrically connected" means "something that has some electrical effect" " includes cases where the device is connected via "anything that has some electrical effect." " is not subject to any particular restriction as long as it enables the transmission and reception of electrical signals between the connection objects. Therefore, even if it is expressed as "electrically connecting," in the actual circuit, In some cases, there are no physical connections and only wires running along the wiring.

[0033] In this specification, "parallel" means that two straight lines are at an angle of -10° or more and 10° or less. Therefore, it includes the case where the angle is between -5° and 5°. "Straight" and "orthogonal" mean that two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, it includes the case where the angle is between 85° and 95°.

[0034] In this specification, when an etching process is performed after a photolithography process, In this case, unless otherwise specified, the resist mask formed in the photolithography process is It shall be removed after the etching process is completed.

[0035] (Embodiment 1) A configuration example of a display device 100 according to one embodiment of the present invention will be described with reference to FIG. FIG. 1(B) is a top perspective view of the display device 100, and FIG. 1(A) is a view taken along a line A1-A2 in FIG. FIG. 2 is a cross-sectional view of a portion indicated by a dashed line.

[0036] <Display device configuration> The display device 100 shown in this embodiment includes a display region 131, a driving circuit 132, and a driving circuit 133. The display device 100 also includes a first electrode 115, an EL layer 117, a second The light-emitting element 125 includes a display electrode 118, and a terminal electrode 216. A plurality of light emitting elements 125 are formed in the region 131. A transistor 232 is connected to control the amount of light.

[0037] The terminal electrode 216 is connected to the external electrode 1 through an anisotropic conductive connection layer 123 provided in the opening 122. 24. The terminal electrode 216 is electrically connected to the drive circuit 132 and the drive circuit The input terminal 132 is electrically connected to the line 133.

[0038] The driving circuit 132 and the driving circuit 133 are each composed of a plurality of transistors 252. The driving circuit 132 and the driving circuit 133 convert the signal supplied from the external electrode 124 into a display. The control circuit 114 has a function of determining which light emitting element 125 in the display area 131 is to be supplied with light.

[0039] The display device 100 shown in FIG. 1 includes a substrate 111 and a substrate 121 bonded together via an adhesive layer 120. The insulating layer 205 is formed on the substrate 111 via the adhesive layer 112. The insulating layer 205 is made of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, etc. Aluminum oxide, aluminum oxide nitride, or aluminum oxide nitride, etc. It is preferable to form the insulating layer 205 by a method such as sputtering or CVD. The insulating film can be formed by using a thermal oxidation method, a coating method, a printing method, or the like.

[0040] In addition, an insulating layer 145 is formed on the substrate 121 via an adhesive layer 142. A light-shielding layer 264 is formed on the substrate 121 via an insulating layer 145. A color layer 266 and an overcoat layer 268 are formed.

[0041] The insulating layer 205 functions as a base layer and prevents the transistor from being damaged by the substrate 111, the adhesive layer 112, etc. This can prevent or reduce the diffusion of moisture and impurity elements into the transistor and light emitting element. In addition, the insulating layer 145 functions as a base layer, and prevents the transistor from being exposed to the substrate 121, the adhesive layer 142, etc. This can prevent or reduce the diffusion of moisture and impurity elements into the MOS transistor or light emitting element. Layer 145 may be formed using materials and methods similar to those used for insulating layer 205 .

[0042] The substrates 111 and 121 are made of an organic resin material or a glass having a sufficient thickness to be flexible. The display device 100 may have a so-called bottom emission structure (lower surface In the case of a display device having a double-side emission structure, the substrate 111 is provided with an EL A material that transmits light emitted from the layer 117 is used. In the case of a light-emitting display device or a dual-side light-emitting display device, an EL layer 1 is formed on the substrate 121. A material that is transparent to light emitted from 17 is used.

[0043] The substrate 121 and the substrate 111 may be made of a flexible material having a visible light transmissivity. The materials include polyethylene terephthalate resin and polyethylene naphthalate resin. , polyacrylonitrile resin, polyimide resin, polymethyl methacrylate resin, polycarbonate Carbonate resin, polyethersulfone resin, polyamide resin, cycloolefin resin , polystyrene resin, polyamide-imide resin, polyvinyl chloride resin, etc. If it is not necessary to transmit light, a non-light-transmitting substrate may be used. For example, the substrate 12 1 or the substrate 111 is a stainless steel substrate, a stainless steel foil substrate, or the like. Good too.

[0044] The thermal expansion coefficient of the substrate 121 and the substrate 111 is preferably 30 ppm / K or less, and more preferably 10 ppm / K or less. More preferably, the concentration is 10 ppm / K or less. A film containing nitrogen and silicon, such as silicon nitride or silicon oxynitride, or a film containing aluminum nitride, etc. A protective film with low water permeability, such as a film containing nitrogen and aluminum, may be formed. The substrate 121 and the substrate 111 are structures in which a fibrous body is impregnated with an organic resin (so-called plastics). (also called repreg) may be used.

[0045] By using such a substrate, it is possible to provide a display device that is less likely to break. It is possible to provide a lightweight display device. Alternatively, it is possible to provide a display device that is easy to bend. This can be done.

[0046] In addition, a transistor 232, a transistor 252, a terminal electrode 216, In this embodiment, the transistor 232 and the The transistor 252 is a channel-etched type transistor, which is a bottom-gate type transistor. Although a transistor is shown as an example, a channel protection transistor or a top gate transistor can also be used. It is also possible to use a transistor or the like. It is also possible to use a dual-gate transistor having a structure in which a gate electrode is sandwiched between the gate electrodes.

[0047] The transistor 232 and the transistor 252 may have a similar structure, except that The size of the transistor (e.g., channel length and channel width) is determined by the The data can be adjusted appropriately.

[0048] The transistor 232 and the transistor 252 include a gate electrode 206, a gate insulating layer 20 7, a semiconductor layer 208, a source electrode 209a, and a drain electrode 209b.

[0049] An electrode 216, a wiring 219, a gate electrode 206, a source electrode 209a, and a drain electrode The terminal electrode 209b can be formed by the same material and method as the terminal electrode 216 described later. The gate insulating layer 207 is formed by the same material and method as the insulating layer 205. It is possible.

[0050] The semiconductor layer 208 may be formed using an amorphous semiconductor, a microcrystalline semiconductor, a polycrystalline semiconductor, or the like. For example, amorphous silicon and microcrystalline germanium can be used. In addition, compound semiconductors such as silicon carbide, gallium arsenide, oxide semiconductors, and nitride semiconductors, An organic semiconductor or the like can be used.

[0051] In addition, when an organic semiconductor is used as the semiconductor layer 208, a low molecular weight organic material having an aromatic ring is used. and π-electron conjugated conductive polymers. For example, rubrene, tetracene, etc. , pentacene, perylene diimide, tetracyanoquinodimethane, polythiophene, polya Cetylene, polyparaphenylenevinylene, etc. can be used.

[0052] When an oxide semiconductor is used as the semiconductor layer 208, CAAC-OS (C Axi s Aligned Crystalline Oxide Semiconductor r), polycrystalline oxide semiconductor, microcrystalline oxide semiconductor, nc-OS (nano Crysta amorphous oxide semiconductors, etc. There can be.

[0053] In addition, oxide semiconductors have a large energy gap of 3.0 eV or more, and therefore have a high In addition, in transistors obtained by processing oxide semiconductors under appropriate conditions, In this case, the off-state current is 100zA (1× 10 -19 A) or less, or 10zA (1×10 -20 A) and even 1zA(1 ×10 -21 A) or less. This makes it possible to provide a display device with low power consumption. It is possible.

[0054] In addition, when an oxide semiconductor is used for the semiconductor layer 208, the insulating layer in contact with the semiconductor layer 208 is It is preferable to use an insulating layer containing oxygen.

[0055] In addition, an insulating layer 210 is formed over the transistor 232 and the transistor 252, An insulating layer 211 is formed on the layer 210. The insulating layer 210 functions as a protective insulating layer. , impurities from layers above the insulating layer 210 to the transistors 232 and 252 The insulating layer 210 can prevent or reduce the diffusion of metal elements. It can be formed using the same materials and methods as in 5.

[0056] In addition, in order to reduce the surface irregularities of the surface on which the light emitting element 125 is formed, the insulating layer 211 is subjected to a flattening process. The planarization treatment may be, but is not limited to, a polishing treatment (e.g., chemical Chemical Mechanical Polishing (CMP) ) or dry etching treatment.

[0057] In addition, by forming the insulating layer 211 using an insulating material having a planarizing function, the polishing process can be performed. The insulating material having a planarizing function may be, for example, polyimide resin, Organic materials such as acrylic resins can be used. In addition to the above organic materials, low dielectric constant materials can also be used. In addition, insulating layers made of these materials can be used. The insulating layer 211 may be formed by stacking a plurality of layers.

[0058] In addition, on the insulating layer 211, the light emitting elements 125 and the partition walls 1 for separating the light emitting elements 125 are formed. 14 has been formed.

[0059] The display device 100 reflects the light 235 emitted from the light emitting element 125 through the colored layer 266 to the substrate. This is a display device with a so-called top emission structure (upper surface emission structure) in which light is emitted from the plate 121 side. do.

[0060] The light emitting element 125 is also formed by a transistor through an opening provided in the insulating layer 211 and the insulating layer 210. The input terminal 232 is electrically connected to the transistor 232 .

[0061] In addition, since the substrate 121 is formed to face the substrate 111, the substrate 121 is called a “facing substrate”. Sometimes referred to as the "substrate."

[0062] As shown in FIG. 15(A), a touch sensor may be provided on the substrate 121. By providing the touch sensor directly on the substrate 121, the touch sensor can be easily adjusted when the substrate is bent. The touch sensor is made of a conductive layer 991 and a conductive layer 99 2, etc. In addition, an insulating layer 993 is provided between them. .

[0063] Note that the conductive layer 991 and / or the conductive layer 992 may be formed of indium tin oxide or indium zinc. It is preferable to use a transparent conductive film such as lead oxide. However, in order to reduce the resistance, 991 and / or the conductive layer 992 may be partially or entirely made of a layer having a low resistance material. For example, aluminum, titanium, chromium, nickel, copper, yttrium, di The elemental metals zinc, molybdenum, silver, tantalum, or tungsten; or The alloy containing this as the main component can be used in a single layer structure or a multilayer structure. Metal nanowires may be used as the layer 991 and / or the conductive layer 992. Silver is a suitable metal for this purpose. This can reduce the resistance value, The sensitivity of the sensor can be improved.

[0064] The insulating layer 993 may be made of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, Aluminum oxide, aluminum oxynitride, or aluminum oxynitride, etc., may be used as a single layer or It is preferable that the insulating layer 993 is formed in a multi-layer structure. The method can be a coating method, a printing method, or the like.

[0065] The touch sensor may be configured using a different substrate instead of the substrate 121. FIG. 1A shows an example of a configuration using a substrate 994. Note that the touch sensor is 994, but one aspect of the embodiment of the present invention is not limited thereto. It may be provided under the plate 994 (between the substrate 121 and the substrate 994). The plate 994 may be made of reinforced glass to protect the display device from scratches.

[0066] The colored layer 266, the light-shielding layer 264, the overcoat layer 268, etc. may not be provided. In that case, by using the EL layer 117A, the EL layer 117B, etc., A color display can be achieved. The EL layer 117A, the EL layer 117B, etc. are red, In this way, the color layer 266 can be used to emit light of different colors such as red, blue, green, etc. By eliminating the need for a 100% chromatic aberration, the color purity can be improved and the amount of light loss can be reduced. 5(A), an example in which the colored layer 266 is not used is shown in FIG. 15(B), and FIG. In contrast to A), FIG. 16B shows an example in which the colored layer 266 and the like are not used.

[0067] <Pixel circuit configuration example> Next, a more specific configuration example of the display device 100 will be described with reference to FIG. 1 is a block diagram for explaining the configuration of a display device 100. The display area 131, the driving circuit 132, and the driving circuit 133 are shown in FIG. For example, the driver circuit 133 functions as a scanning line driver circuit. It functions as such.

[0068] The display devices 100 are arranged in parallel to each other, and are driven by a driving circuit 132. The m scanning lines 135 are arranged approximately in parallel to each other and are controlled by the driving circuit 133. The display area 131 further includes n signal lines 136 whose potentials are controlled by the pixel electrodes 131a and 131b. The pixel 134 is arranged in a triplex shape. The circuit 133 may be collectively referred to as a drive circuit section.

[0069] Each scanning line 135 corresponds to one of the pixels 134 arranged in m rows and n columns in the display area 131. The signal lines 136 are electrically connected to the n pixels 134 arranged in any row. m pixels 134 arranged in m rows and n columns are arranged in any one of the columns. 4. Both m and n are integers of 1 or more.

[0070] 2B and 2C show a pixel 134 of the display device shown in FIG. 2A. The figure shows a circuit configuration that can be used.

[0071] [An example of a pixel circuit for a light-emitting display device] The pixel 134 shown in FIG. 2B includes a transistor 431, a capacitor 233, and a transistor The light-emitting element 125 includes a transistor 232 and a light-emitting element 125 .

[0072] One of the source electrode and the drain electrode of the transistor 431 is connected to a transistor In addition, the transistor 431 is electrically connected to a line (hereinafter, referred to as a signal line DL_n). The gate electrode of is electrically connected to the wiring (hereinafter referred to as the scanning line GL_m) to which the gate signal is applied. is connected to.

[0073] The transistor 431 is turned on or off to set the node 435.

[0074] One of a pair of electrodes of the capacitor 233 is electrically connected to the node 435, and the other is The source electrode and the drain electrode of the transistor 431 are electrically connected to the The other of the electrodes is electrically connected to node 435 .

[0075] The capacitor 233 functions as a storage capacitor that stores data written to the node 435. has.

[0076] One of the source electrode and the drain electrode of the transistor 232 is electrically connected to the potential supply line VL_a. The other end is electrically connected to a node 437. The gate electrode of is electrically connected to node 435 .

[0077] One of the anode and the cathode of the light emitting element 125 is electrically connected to the potential supply line VL_b. and the other is electrically connected to node 437.

[0078] The light-emitting element 125 may be, for example, an organic electroluminescence element (also called an organic EL element). However, the light emitting element 125 is not limited to this. An inorganic EL element made of an inorganic material may also be used.

[0079] A high power supply potential VDD is applied to one of the potential supply lines VL_a and VL_b. and the other is supplied with a low power supply potential VSS.

[0080] In the display device having the pixels 134 in FIG. 2B, the first driver circuit 132 drives the pixels in each row. 134 is selected in sequence, transistor 431 is turned on, and a data signal is applied to node 435. Write.

[0081] In the pixel 134 in which data is written to the node 435, the transistor 431 is turned off. In addition, the transistor 435 is turned on in response to the potential of the data written to the node 435. The amount of current flowing between the source electrode and the drain electrode of the transistor 232 is controlled, and a light emitting element is formed. 125 emits light with a luminance according to the amount of current flowing through it. You can display the image.

[0082] [An example of a pixel circuit for a liquid crystal display device] The pixel 134 shown in FIG. 2C includes a liquid crystal element 432, a transistor 431, and a capacitor 2. 33 and,

[0083] The potential of one of the pair of electrodes of the liquid crystal element 432 is set appropriately according to the specifications of the pixel 134. The alignment state of the liquid crystal element 432 is determined by data written to the node 436 . Note that a common electrode is connected to one of a pair of electrodes of the liquid crystal element 432 included in each of the pixels 134. A potential (common potential) may be applied to each of the liquid crystal elements 432 of each row of pixels 134. A different potential may be applied to one of the pair of electrodes.

[0084] For example, the display device including the liquid crystal element 432 can be driven in a TN mode, an STN mode, or the like. mode, VA mode, ASM (Axially Symmetric Aligned Mi cro-cell mode, OCB (Optically Compensated B irefringence mode, FLC (Ferroelectric Liqui d Crystal) mode, AFLC (AntiFerroelectric Liq. uid Crystal) mode, MVA mode, PVA (Patterned Ver (Artificial Alignment) mode, IPS mode, FFS mode, or TBA (Transverse Bend Alignment) mode, etc. may also be used. In addition to the above-mentioned driving method, the display device can be driven by an ECB (Electric Carrier Bipolar Transistor) or the like. Ally Controlled Birefringence mode, PDLC(P Oligomeric Dispersed Liquid Crystal (PNLC) mode (Polymer Network Liquid Crystal) mode, guest hole However, there are various types of liquid crystal elements and their driving methods, and they are not limited to these. A variety of different types of sensors can be used.

[0085] In addition, a liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent The liquid crystal element 432 may be configured as follows. The liquid crystal exhibiting the blue phase does not require alignment treatment. In addition, liquid crystals that exhibit a blue phase have a short response time of 1 msec or less, making them suitable for optical applications. Since it is isotropic, it has little viewing angle dependency.

[0086] As the display element, a display element other than the light emitting element 125 and the liquid crystal element 432 is used. For example, electrophoretic elements, electronic ink, and electrophotography are used as display elements. Welding elements, MEMS (Microelectromechanical systems), digital Micromirror Device (DMD), DMS (Digital Micro Shutter), M IRASOL(R), IMOD (Interference Modulation) element It is also possible to use the following:

[0087] In the pixel 134 in the mth row and the nth column, One is electrically connected to the signal line DL_n, and the other is electrically connected to the node 436. The gate electrode of the transistor 431 is electrically connected to the scanning line GL_m. By being in an on or off state, the data signal to node 436 is transmitted to the data input terminal 432. It has the function of controlling writing.

[0088] One of a pair of electrodes of the capacitor 233 is connected to a wiring to which a specific potential is supplied (hereinafter, a capacitor line CL ) and the other is electrically connected to node 436. The other of the pair of electrodes of 32 is electrically connected to a node 436. The value of is set appropriately according to the specifications of the pixel 134. It functions as a storage capacitor that stores written data.

[0089] For example, in a display device having the pixel 134 shown in FIG. 2C, the first driver circuit 132 drives each pixel. The pixels 134 in the row are selected in sequence, and transistor 431 is turned on to provide data to node 436. Write the data signal.

[0090] In the pixel 134 in which a data signal is written to the node 436, the transistor 431 is in an off state. By repeating this process for each row, an image can be displayed.

[0091] <Example of bending of display device> The display device 100 according to one embodiment of the present invention is configured using a flexible substrate. Therefore, it can be freely curved or bent. FIG. 3A is a perspective view showing the display device 100 folded in three. FIG. 3(B) is a perspective view showing the folded state. FIG. 3(C) is a perspective view showing the folded state. 3(A) to 3(C) are perspective views showing a state in which the display device 100 is wound in a roll. In (C), the external electrodes 124 are omitted.

[0092] As shown in FIG. 3, the display device 100 can be folded freely, making it easy to store. The display device 100 is also highly portable. ), the substrate 121 is bent so that it faces inward (valley side) and the substrate 111 faces outward (mountain side). 3(A) to 3(C) are preferably arranged so that the substrate 111 is always on the outside. 4 shows an example of bending the wire in the direction perpendicular to the axis of the wire.

[0093] At the bent portion of the display device 100, both the substrate 121 and the substrate 111 are subject to mechanical stress due to bending. In addition, mechanical stress caused by bending is received by the board located inside the bent part. In this case, the stress 241 received by the outer substrate is greater than the stress 242 received by the outer substrate.

[0094] The display device 100 disclosed in this embodiment has transistors arranged in a matrix on a substrate 111. The wiring for supplying signals to each transistor is formed in a grid pattern. In addition, multiple insulating layers are also formed. As a result, the substrate 111 has a higher mechanical strength than the substrate 121 .

[0095] Therefore, when the display device 100 is bent, the substrate 111 is on the outer side (mountain side) of the bent portion. By bending in this manner, the display device 100 is less likely to be damaged even if it is repeatedly bent and extended. As a result, the reliability of the display device 100 can be improved.

[0096] In addition, since the display device 100 is bendable, there is a possibility that it will break even if it is dropped. It is possible to construct a low-profile, robust display device.

[0097] In the case of a display device with a top emission structure, light is emitted toward the inside of the bent portion. Therefore, when bending, the light emitting surface is located on the inside, so the light emitting surface is maintained. Therefore, by preventing the light from emitting light when the light is bent, This makes it possible to reduce power consumption.

[0098] On the other hand, in the case of a bottom emission structure, light is emitted in the outward direction of the bent portion. Therefore, the display can be seen even in a bent state. By not emitting light in the areas where there is no light, power consumption can be reduced. come.

[0099] In addition, when a substrate 994 is provided on the substrate 121 as a substrate for a touch sensor or a protection substrate, That is, cross-sectional views of the top emission case are shown in FIG. 19(A) and FIG. 19(B). By adopting such an arrangement, the display device 100 is less likely to be damaged, and Reliability can be improved.

[0100] In addition, when a substrate 994 is provided under the substrate 111 as a substrate for a touch sensor or a protection substrate, In other words, in the case of bottom emission, in the cross-sectional views of FIG. 19(A) and FIG. 19(B), , substrate 111 becomes substrate 994, substrate 121 becomes substrate 111, and substrate 994 becomes substrate 1 The arrangement will be 21.

[0101] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0102] (Embodiment 2) In this embodiment, an example of a method for manufacturing the display device 100 will be described with reference to FIGS. 4 to 7 are cross-sectional views of the portion indicated by the dashed line A1-A2 in FIG. is equivalent to.

[0103] [Forming a release layer] First, a release layer 113 is formed on an element formation substrate 101 (see FIG. 4(A)). The substrate 101 for forming the semiconductor device may be a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, A metal substrate or the like can be used. In addition, a substrate having heat resistance capable of withstanding the processing temperature of this embodiment is also suitable. A plastic substrate having such a structure may also be used.

[0104] The glass substrate may be made of, for example, aluminosilicate glass or aluminoborosilicate glass. Glass materials such as barium borosilicate glass are used. By adding more BaO, a more practical heat-resistant glass can be obtained. Russ etc. can be used.

[0105] The release layer 113 may be made of tungsten, molybdenum, titanium, tantalum, niobium, nickel, or copper. Baltic, Zirconium, Ruthenium, Rhodium, Palladium, Osmium, Iridium, An element selected from silicon, an alloy material containing the element, or a chemical compound containing the element The insulating film can be formed by using a composite material. In addition, the insulating film can be formed by using a single layer or a laminate of these materials. The crystal structure of the separation layer 113 may be any of amorphous, microcrystalline, and polycrystalline. The peeling layer 113 may be made of aluminum oxide, gallium oxide, zinc oxide, or niobium oxide. Titanium oxide, indium oxide, indium tin oxide, indium zinc oxide, or In It can also be formed using a metal oxide such as GaZnO (IGZO).

[0106] The peeling layer 113 can be formed by a sputtering method, a CVD method, a coating method, a printing method, or the like. The coating method includes a spin coating method, a droplet ejection method, and a dispense method.

[0107] When the peeling layer 113 is formed as a single layer, it is preferably made of tungsten, molybdenum, or tungsten and molybdenum. It is preferable to use an alloy material containing molybdenum. Alternatively, the peeling layer 113 is formed as a single layer. In this case, tungsten oxide or oxynitride, molybdenum oxide or oxide Nitrides, or oxides or oxynitrides of alloys containing tungsten and molybdenum It is preferable that

[0108] The peeling layer 113 may be, for example, a layer containing tungsten and a layer containing an oxide of tungsten. When forming a stacked structure of layers containing tungsten, an oxide insulating layer is formed in contact with the layer containing tungsten. As a result, tungsten oxide is formed at the interface between the tungsten-containing layer and the oxide insulating layer. The surface of the layer containing tungsten may be subjected to a thermal oxidation treatment, an oxygen plating treatment, or the like. The tungsten oxide-containing A layer including the above-mentioned metal oxide may be formed.

[0109] In this embodiment, tungsten is formed as the peeling layer 113 by a sputtering method. .

[0110] [Forming an insulating layer] Next, an insulating layer 205 is formed as a base layer on the peeling layer 113 (see FIG. 4(A)). The edge layer 205 may be made of silicon oxide, silicon nitride, silicon oxynitride, silicon oxynitride, silicon oxide nitride, or oxide. Aluminum nitride, aluminum oxynitride, aluminum nitride oxide, etc., are used as a single layer or It is preferable to form the insulating layer 205 in a multi-layer structure. For example, the insulating layer 205 may be formed of silicon oxide and silicon nitride. It may be a two-layer structure made by laminating the above materials, or a five-layer structure made by combining the above materials. The layer 205 is formed by using a sputtering method, a CVD method, a thermal oxidation method, a coating method, a printing method, or the like. It is possible.

[0111] The thickness of the insulating layer 205 is 30 nm or more and 500 nm or less, preferably 50 nm or more and 400 nm or less. m or less.

[0112] The insulating layer 205 prevents the diffusion of impurity elements from the element formation substrate 101 and the peeling layer 113. In addition, even after the element formation substrate 101 is replaced with the substrate 111, Preventing the diffusion of impurity elements from the substrate 111 or the adhesive layer 112 to the light emitting element 125, or In this embodiment, the insulating layer 205 is formed by a plasma CVD method. A laminated film of silicon oxynitride with a thickness of 200 nm and silicon oxynitride with a thickness of 50 nm is used. .

[0113] [Forming the gate electrode] Next, a gate electrode 206 is formed on the insulating layer 205 (see FIG. 4(A)). Gate electrode 206 is made of aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten. or an alloy containing the above-mentioned metal elements or the above-mentioned metal elements. Alternatively, it may be formed by using a combination of manganese and zirconium. The gate electrode 206 may be a single layer. For example, a silicon-containing aluminum film may be used. Single layer structure, two-layer structure with aluminum layer laminated on titanium layer, titanium layer on titanium nitride layer a two-layer structure in which a tungsten film is laminated on a titanium nitride film; A two-layer structure is formed by laminating a tungsten film on a tungsten nitride film or a copper film on a titanium film. A two-layer structure in which a titanium film is laminated, and an aluminum film is laminated on the titanium film, and then There are three-layer structures, such as a titanium film formed on top of aluminum. A film of elements selected from the group consisting of zinc, tungsten, molybdenum, chromium, neodymium, and scandium. Alternatively, an alloy film in which a plurality of layers are combined, or a nitride film may be used.

[0114] The gate electrode 206 is made of indium tin oxide or indium oxide containing tungsten oxide. oxide, indium zinc oxide with tungsten oxide, indium oxide with titanium oxide Indium tin oxide, indium zinc oxide, silicon oxide with titanium oxide A light-transmitting conductive material such as indium tin oxide can also be used. A laminate structure of the above-mentioned light-transmitting conductive material and the above-mentioned metal element may also be used.

[0115] First, the gate electrode 20 is formed on the insulating layer 205 by a sputtering method, a CVD method, a deposition method, or the like. A conductive film to be 6 is laminated, and a resist mask is formed on the conductive film by a photolithography process. Next, a part of the conductive film that will become the gate electrode 206 is etched using a resist mask. The gate electrode 206 is formed by etching. At this time, other wiring and electrodes are also formed at the same time. It is possible.

[0116] The etching of the conductive film may be performed by either dry etching or wet etching, or both. In addition, when etching is performed by dry etching, If an ashing process is performed before removing the resist mask, it becomes easier to remove the resist mask using a stripping solution. It can be said that:

[0117] The gate electrode 206 may be formed by electrolytic plating, printing, inkjet printing, or the like instead of the above-mentioned method. It may be formed by a jet method or the like.

[0118] The thickness of the gate electrode 206 is preferably 5 nm to 500 nm, more preferably 10 nm to 300 nm. 00 nm or less, and more preferably 10 nm or more and 200 nm or less.

[0119] In addition, the gate electrode 206 is formed using a conductive material having a light-shielding property, so that the gate electrode 206 is protected from external This makes it difficult for the light to reach the semiconductor layer 208 from the gate electrode 206 side. As a result, fluctuations in the electrical characteristics of the transistor due to light irradiation can be suppressed.

[0120] [Forming the gate insulating layer] Next, the gate insulating layer 207 is formed (see FIG. 4(A)). The gate insulating layer 207 is, for example, For example, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide aluminum oxide, a mixture of aluminum oxide and silicon oxide, hafnium oxide, gallium oxide or Ga-Zn based metal oxide, silicon nitride, or the like may be used, and the layer may be a laminate or a single layer.

[0121] The gate insulating layer 207 is made of hafnium silicate (HfSiO x ), nitrogen is added Hafnium Silicate (HfSi x O y N z ), nitrogen-doped hafnium aluminium minate (HfAl x O y N z ), hafnium oxide, yttrium oxide and other high- By using k-type materials, the gate leakage of transistors can be reduced. For example, silicon oxynitride A laminate of carbon and hafnium oxide may also be used.

[0122] The thickness of the gate insulating layer 207 is 5 nm or more and 400 nm or less, and more preferably 10 nm or more. It is preferably 300 nm or less, and more preferably 50 nm or more and 250 nm or less.

[0123] The gate insulating layer 207 can be formed by a sputtering method, a CVD method, a deposition method, or the like. .

[0124] The gate insulating layer 207 may be a silicon oxide film, a silicon oxynitride film, or a silicon nitride oxide film. When forming a silicon film, a deposition gas containing silicon and an oxidizing gas are used as the source gas. Representative examples of deposition gases containing silicon include silane, disilane, Examples of oxidizing gases include trisilane, fluorinated silane, etc. Examples of oxidizing gases include oxygen, ozone, and nitrous oxide. , nitrogen dioxide, etc.

[0125] The gate insulating layer 207 is formed by sequentially depositing a nitride insulating layer and an oxide insulating layer from the gate electrode 206 side. By providing a nitride insulating layer on the gate electrode 206 side, From the gate electrode 206 side, hydrogen, nitrogen, an alkali metal, an alkaline earth metal, or the like is a semiconductor. In general, nitrogen, alkali metals, and Alkaline earth metals and the like function as impurity elements in semiconductors. It functions as an impurity element in a conductor. Therefore, the term "impurity" in this specification includes hydrogen, These include nitrogen, an alkali metal, or an alkaline earth metal.

[0126] In addition, when an oxide semiconductor is used as the semiconductor layer 208, an oxide insulating layer is provided on the semiconductor layer 208 side. By providing the edge layer, the defect level at the interface between the gate insulating layer 207 and the semiconductor layer 208 is reduced. As a result, a transistor with little deterioration in electrical characteristics can be obtained. When an oxide semiconductor is used for the semiconductor layer 208, When an oxide insulating layer containing more oxygen than the oxygen that satisfies the stoichiometric composition is used, In addition, the defect level at the interface between the gate insulating layer 207 and the semiconductor layer 208 can be further reduced. This is possible and therefore preferable.

[0127] In addition, when the gate insulating layer 207 is a stack of a nitride insulating layer and an oxide insulating layer as described above, In this case, the nitride insulating layer is preferably thicker than the oxide insulating layer.

[0128] Since the nitride insulating layer has a larger dielectric constant than the oxide insulating layer, the thickness of the gate insulating layer 207 is Even if the thickness is increased, the electric field generated in the gate electrode 206 can be efficiently transmitted to the semiconductor layer 208. In addition, by making the gate insulating layer 207 thick, the dielectric strength of the gate insulating layer 207 can be increased. Therefore, the reliability of the display device can be improved.

[0129] The gate insulating layer 207 is made of a first nitride insulating layer having few defects and a second nitride insulating layer having a hydrogen blocking property. A second nitride insulating layer having a high resistance and an oxide insulating layer are laminated in this order from the gate electrode 206 side. The gate insulating layer 207 may have a laminate structure in which a first nitride insulating layer having few defects is formed. By using the layer, the withstand voltage of the gate insulating layer 207 can be improved. By providing a second nitride insulating layer having a high hydrogen blocking property to the gate insulating layer 207, Hydrogen contained in the gate electrode 206 and the first nitride insulating layer moves to the semiconductor layer 208. This can be prevented.

[0130] An example of a method for forming the first nitride insulating layer and the second nitride insulating layer is shown below. Using a mixture of orthogonal, nitrogen, and ammonia gases as the source gases, the plasma CVD method Then, a silicon nitride film with few defects is formed as the first nitride insulating layer. By switching to a mixture of silane and nitrogen, hydrogen concentration is low and hydrogen is blocked. A silicon nitride film capable of being formed by this method is deposited as the second nitride insulating layer. By this method, a nitride insulating layer having few defects and a blocking property against hydrogen is laminated. A gate insulating layer 207 can then be formed.

[0131] The gate insulating layer 207 is made up of a third nitride insulating layer having a high impurity blocking property and a defect-resistant layer. A first nitride insulating layer having few defects, a second nitride insulating layer having high hydrogen blocking properties, and an oxide The gate electrode 206 may have a laminated structure in which a nitride insulating layer and a nitride insulating layer are laminated in this order from the gate electrode 206 side. The gate insulating layer 207 is provided with a third nitride insulating layer having high impurity blocking properties. Then, hydrogen, nitrogen, an alkali metal, an alkaline earth metal, or the like is introduced into the semiconductor from the gate electrode 206. This can prevent the material from migrating to the layer 208.

[0132] An example of a method for forming the first to third nitride insulating layers will be described below. The plasma CVD method was used with a mixture of silane, nitrogen, and ammonia as the source gas. A silicon nitride film having high impurity blocking properties is formed as the third nitride insulating layer. Next, the flow rate of ammonia is increased to form a silicon nitride film with fewer defects on the first nitride film. Next, the source gas is switched to a mixture of silane and nitrogen. The second silicon nitride film has a low hydrogen concentration and is capable of blocking hydrogen. This method of formation results in fewer defects and less impurities. The gate insulating layer 207 is formed by laminating a nitride insulating layer having blocking properties. can.

[0133] In addition, when a gallium oxide film is formed as the gate insulating layer 207, MOCVD (Metal Organic Chemical Vapor Deposition (OCVD) method It can be formed by:

[0134] The semiconductor layer 208 in which the channel of the transistor is formed and the insulating layer containing hafnium oxide are The insulating layer is laminated on the insulating layer containing hafnium oxide, and electrons are injected into the insulating layer containing hafnium oxide. In this way, the threshold voltage of the transistor can be changed.

[0135] [Forming a semiconductor layer] As described above, the semiconductor layer 208 is made of an amorphous semiconductor, a microcrystalline semiconductor, a polycrystalline semiconductor, or the like. For example, amorphous silicon, microcrystalline germanium, etc. can be used. In addition, chemical compounds such as silicon carbide, gallium arsenide, oxide semiconductors, and nitride semiconductors can be used. Compound semiconductors, organic semiconductors, etc. can be used.

[0136] The thickness of the semiconductor layer 208 is 3 nm to 200 nm, preferably 3 nm to 100 nm. More preferably, the thickness is 3 nm or more and 50 nm or less. As the oxide semiconductor film 08, a 30-nm-thick oxide semiconductor film is formed by a sputtering method.

[0137] Next, a resist mask is formed over the oxide semiconductor film, and an oxide A part of the semiconductor film is selectively etched to form a semiconductor layer 208. The mask is formed by appropriately using a photolithography method, a printing method, an inkjet method, or the like. If the resist mask is formed by the inkjet method, it is possible to This reduces manufacturing costs.

[0138] The oxide semiconductor film may be etched by either dry etching or wet etching. After etching of the oxide semiconductor film is completed, the resist mask is removed. (See Figure 4(B)).

[0139] [Forming source electrodes, drain electrodes, etc.] Next, the source electrode 209a, the drain electrode 209b, the wiring 219, and the terminal electrode 216 First, a conductive film is formed over the gate insulating layer 207 and the semiconductor layer 208.

[0140] Conductive films include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, Elemental metals consisting of tungsten, molybdenum, silver, tantalum, or tungsten, or The alloy mainly composed of silicon can be used in a single layer structure or a multilayer structure. A single-layer structure of an aluminum film containing titanium, a two-layer structure of an aluminum film laminated on a titanium film, A two-layer structure in which an aluminum film is laminated on a copper-magnesium-aluminum film. Two-layer structure with copper film laminated on alloy film, two-layer structure with copper film laminated on titanium film, tungsten A two-layer structure in which a copper film is laminated on a silicon film, a titanium film or titanium nitride film, and a titanium film or An aluminum or copper film is laminated on the titanium nitride film, and then a titanium film or copper film is laminated on top of that. A three-layer structure in which a titanium nitride film is formed, a molybdenum film or a molybdenum nitride film, and the molybdenum film or the molybdenum nitride film are formed. An aluminum film or a copper film is laminated on the molybdenum film or the molybdenum nitride film, and further A three-layer structure in which a molybdenum film or a molybdenum nitride film is formed on the tungsten film. There is also a three-layer structure in which a copper film is laminated on top of the tungsten film.

[0141] In addition, indium tin oxide, zinc oxide, indium oxide containing tungsten oxide, oxide Indium zinc oxide with tungsten oxide, indium oxide with titanium oxide, Indium tin oxide containing titanium, indium zinc oxide, indium with silicon oxide Conductive materials containing oxygen, such as aluminum tin oxide, and conductive materials containing nitrogen, such as titanium nitride and tantalum nitride. A conductive material may be used. In addition, the above-mentioned material containing a metal element and a conductive material containing oxygen may be used. Also, a laminated structure combining the above-mentioned material containing a metal element and It is also possible to use a laminated structure in which a conductive material containing nitrogen is combined. The product of a combination of a material containing an element, a conductive material containing oxygen, and a conductive material containing nitrogen It may also be a layered structure.

[0142] The thickness of the conductive film is preferably 5 nm to 500 nm, more preferably 10 nm to 300 nm. nm or less, and more preferably 10 nm or more and 200 nm or less. A tungsten film having a thickness of 300 nm is formed.

[0143] Next, a portion of the conductive film is selectively etched using a resist mask to form a source electrode 20. 9a, the drain electrode 209b, the wiring 219, and the terminal electrode 216 (formed from the same film as this The resist mask is formed by photolithography. The deposition may be carried out by using a technique such as a lithography method, a printing method, or an ink-jet method. When the inkjet method is used, no photomask is used, which reduces manufacturing costs. do.

[0144] The etching of the conductive film may be performed by either dry etching or wet etching, or both. In addition, a part of the exposed semiconductor layer 208 is removed by the etching process. There may be cases where this occurs.

[0145] The etching of the conductive film may be performed by either dry etching or wet etching, or both. After etching of the conductive film is completed, the resist mask is removed (see FIG. 4(C)). .).

[0146] [Forming an insulating layer] Next, the source electrode 209a, the drain electrode 209b, the wiring 219, and the terminal electrode 216 The insulating layer 210 is formed on the insulating layer 205 by using the same material and method as the insulating layer 205. It can be formed.

[0147] In addition, when an oxide semiconductor is used for the semiconductor layer 208, at least the semiconductor of the insulating layer 210 It is preferable to use an insulating layer containing oxygen in the region in contact with the layer 208. For example, the insulating layer 2 When the insulating film 10 is a multi-layer laminate, at least the layer in contact with the semiconductor layer 208 is made of silicon oxide. It is sufficient to form it.

[0148] [Formation of openings] Next, a portion of the insulating layer 210 is selectively etched using a resist mask to form an opening 12. At this time, other openings (not shown) are also formed at the same time. The resist mask is formed as follows: The method can be appropriately carried out by using a photolithography method, a printing method, an ink-jet method, or the like. When a resist mask is formed using the inkjet method, no photomask is used, so manufacturing costs are reduced. This can reduce costs.

[0149] The etching of the conductive film may be performed by either dry etching or wet etching, or both. In addition, a part of the exposed semiconductor layer 208 is removed by the etching process. There may be cases where this occurs.

[0150] By forming the opening 128, the drain electrode 209b and a part of the terminal electrode 216 are exposed. After the opening 128 is formed, the resist mask is removed.

[0151] [Forming a planarizing film] Next, an insulating layer 211 is formed on the insulating layer 210. The insulating layer 211 is formed in the same manner as the insulating layer 205. The material and method can be used to form the above-mentioned.

[0152] In order to reduce the surface irregularities on the surface on which the light emitting element 125 is formed, the insulating layer 211 is subjected to a planarization process. The planarization process is not particularly limited, but may be a polishing process (e.g., chemical mechanical polishing). Polishing method (Chemical Mechanical Polishing: CMP), This can be achieved by a dry etching process.

[0153] In addition, by forming the insulating layer 211 using an insulating material having a planarizing function, the polishing process can be performed. The insulating material having a planarizing function may be, for example, polyimide resin, Organic materials such as acrylic resins can be used. In addition to the above organic materials, low dielectric constant materials can also be used. In addition, insulating layers made of these materials can be used. The insulating layer 211 may be formed by stacking a plurality of layers.

[0154] In addition, a part of the insulating layer 211 in a region overlapping the opening 128 is removed to form an opening 129. At this time, other openings (not shown) are also formed at the same time. The insulating layer 211 in the area where the photoresist is to be formed is removed. A resist mask is formed by a lithography process, and the insulating layer 211 is covered with the resist mask. The opening 129 can be formed by etching the uncut area (see FIG. 5(A)). By forming the above-mentioned, the surface of the drain electrode 209b is exposed.

[0155] In addition, by using a photosensitive material for the insulating layer 211, it is possible to avoid the use of a resist mask. In this embodiment, the opening 129 can be formed without using a photosensitive polyimide resin. This is used to form the insulating layer 211 and the opening 129 .

[0156] [Forming the anode] Next, the electrode 115 is formed over the insulating layer 211 (see FIG. 5B). The EL layer 117 is formed using a conductive material that efficiently reflects light emitted by the EL layer 117. It is preferable that the electrode 115 is a single layer, and may be a multi-layer structure. For example, when the electrode 115 is used as an anode, the layer in contact with the EL layer 117 is made of indium tin oxide. The layer has a work function larger than that of the EL layer 117 of the material, and has light transmitting properties. A layer with a high refractive index (such as aluminum, an alloy containing aluminum, or silver) may be provided. .

[0157] In this embodiment, a display device having a top emission structure is illustrated. Bottom emission structure (bottom injection structure), or dual emission structure (double-sided injection structure) ) display device.

[0158] The display device 100 is configured as a bottom emission structure or a dual emission structure. In the case of forming a display device having a dual emission structure, the electrode 115 is made of a conductive material having a light transmitting property. The material should be used.

[0159] The electrode 115 is formed by forming a conductive film to be the electrode 115 on the insulating layer 211 and then forming a resist on the conductive film. A resist mask is formed on the conductive film, and a region of the conductive film that is not covered with the resist mask is etched. The conductive film can be formed by etching using a dry etching method or a wet etching method. The resist mask is then formed on the substrate 10. ... This can be carried out by appropriately using a photolithography method, a printing method, an inkjet method, or the like. If the resist mask is formed by the inkjet method, a photomask is not used, so the manufacturing process is After the electrode 115 is formed, the resist mask is removed.

[0160] [Forming a partition] Next, the partition wall 114 is formed (see FIG. 5(C)). The partition wall 114 is a barrier layer for preventing light emission between adjacent pixels. This is provided to prevent the element 125 from accidentally shorting out electrically and erroneously emitting light. When a metal mask is used to form the EL layer 117, the metal mask may contact the electrode 115. The partition wall 114 is made of epoxy resin, acrylic resin, imide resin, etc. The partition wall 1 can be made of an organic resin material such as grease or an inorganic material such as silicon oxide. 14 is such that the side wall is an inclined surface formed with a taper or continuous curvature. By forming the side wall of the partition wall 114 in such a shape, This can improve the coverage of the EL layer 117 and the electrodes 118 .

[0161] [Forming the EL layer] The configuration of the EL layer 117 will be described in the fourth embodiment.

[0162] [Forming the cathode] In this embodiment, the electrode 118 is used as a cathode, and therefore the electrode 118 is connected to the EL layer 11 described later. It is preferable to form the gate electrode 7 using a material having a small work function that can inject electrons. Instead of a single metal with a low work function, an alkali metal or alkaline earth metal with a low work function is used. A layer of metal with a thickness of several nanometers is formed as a buffer layer, and then a metal material such as aluminum is formed on top of it. The insulating layer is formed using a conductive oxide material such as indium tin oxide or a semiconductor material. The buffer layer may be made of an oxide, halide, or magnesium of an alkaline earth metal. An alloy such as neodymium-silver can also be used.

[0163] In addition, when light emitted from the EL layer 117 is extracted through the electrode 118, the electrode 118 is The electrode 115, the EL layer 117, and the electrode 118 preferably have a property of transmitting visible light. As a result, the light emitting element 125 is formed (see FIG. 5(D)).

[0164] [Forming the opposing element forming substrate] The light-shielding layer 264, the coloring layer 266, the overcoat layer 268, the insulating layer 145, and the release layer 1 The element forming substrate 141 on which the element 43 is formed is placed on the element forming substrate 101 via the adhesive layer 120. The element forming substrate 141 is formed facing the element forming substrate 101 (see FIG. 6(A)). Since the element forming substrate 141 is formed to face each other, it is sometimes called the "opposite element forming substrate." The configuration of the element formation substrate 141 (opposing element formation substrate) will be described later.

[0165] The adhesive layer 120 is formed in contact with the electrode 118. The element formation substrate 141 has the adhesive layer 120. The adhesive layer 120 may be a photocurable adhesive, a reaction curable adhesive, or a heat curable adhesive. Adhesives such as epoxy resins, acrylics, or anaerobic adhesives can be used. For the top emission structure, the adhesive layer 1 20 contains desiccants (such as zeolite) whose size is less than the wavelength of light, and fillers with a high refractive index (such as acid When titanium dioxide, zirconium, etc. are mixed, the efficiency of extracting the light emitted by the EL layer 117 increases. This is preferable because it improves the

[0166] [Removing the element formation substrate from the insulating layer] Next, the element forming substrate 101 that is in contact with the insulating layer 205 via the peeling layer 113 is removed from the insulating layer 205. The peeling method is to apply mechanical force (human force). (peeling by hand or with a tool, separating by rotating a roller, ultrasonic, etc.) For example, the peeling layer 113 may be cut with a sharp blade or by laser irradiation. Insert a cut into the wood and inject water into the cut. Or spray a mist of water into the cut. Water seeps into the gap between the release layer 113 and the insulating layer 205 due to capillary action, forming an element shape. The grown substrate 101 can be easily peeled off from the insulating layer 205 .

[0167] [Bonding the substrates together] Next, the substrate 111 is bonded to the insulating layer 205 via the adhesive layer 112 (FIG. 7(A), FIG. 7(B). The adhesive layer 112 may be made of the same material as the adhesive layer 120.

[0168] [Peeling the opposing element forming substrate from the insulating layer] Next, the element forming substrate 141 that is in contact with the insulating layer 145 via the release layer 143 is removed from the insulating layer 145. The element formation substrate 141 is peeled off from the above-mentioned element formation substrate (see FIG. 8(A)). This can be done in the same manner as in peeling off the plate 101.

[0169] [Bonding the substrates together] Next, the substrate 121 is attached to the insulating layer 145 via the adhesive layer 142 (see FIG. 8(B)). The adhesive layer 142 may be made of the same material as the adhesive layer 120.

[0170] [Forming an opening] Next, the substrate 121, the adhesive layer 142, and the like in the area overlapping the terminal electrode 216 and the opening 128 are The insulating layer 145, the color layer 266, the overcoat layer 268, and the adhesive layer 120 are removed. 9A, an opening 122 is formed. By forming the opening 122, the terminal A portion of the surface of the electrode 216 is exposed.

[0171] [Forming external electrodes] Next, an anisotropic conductive connection layer 123 is formed in the opening 122, and a surface is formed on the anisotropic conductive connection layer 123. An external electrode 124 for inputting power and signals to the display device 100 is formed (see FIG. 9(B)). The terminal electrode 216 is electrically connected to the external electrode 124 via the anisotropic conductive connection layer 123. The external electrode 124 may be, for example, an FPC (Flexible Printed Circuit). d circuit) can be used.

[0172] The anisotropic conductive connection layer 123 is a known anisotropic conductive film (ACF). c Conductive Film) and Anisotropic Conductive Paste (ACP) It can be formed using a ropic conductive paste, etc.

[0173] The anisotropic conductive connection layer 123 is made of a thermosetting or thermosetting and photosetting resin with conductive particles. The mixed paste or sheet-like material is then hardened. The material 123 exhibits anisotropic conductivity when irradiated with light or subjected to thermocompression. The conductive particles used in 123 are, for example, spherical organic resin particles of Au, Ni, Co, etc. Particles coated with a thin film of metal can be used.

[0174] The external electrode 124 and the terminal electrode 216 are electrically connected via the anisotropic conductive connection layer 123. This makes it possible to input power and signals to the display device 100.

[0175] [Structures formed on the opposing element forming substrate] Next, regarding the structures such as the light-shielding layer 264 formed on the element formation substrate 141, FIG. I will explain it below.

[0176] First, an element formation substrate 141 is prepared. Next, a release layer 143 and an insulating layer 144 are formed on the element formation substrate 141. The edge layer 145 is formed (see FIG. 10(A)). The release layer 143 is made of the same material as the release layer 113. The insulating layer 145 can be formed using the same material and method as the insulating layer 205. The composition may be formed by the materials and methods.

[0177] Next, a light-shielding layer 264 is formed on the insulating layer 145 (see FIG. 10(B)). A layer 266 is formed (see FIG. 10(C)).

[0178] The light-shielding layer 264 and the colored layer 266 can be formed by using various materials using a printing method, an ink-jet method, or the like. They are formed at desired positions using photolithography.

[0179] Next, an overcoat layer 268 is formed on the light-shielding layer 264 and the colored layer 266 (FIG. 10 (See (D)).

[0180] The overcoat layer 268 may be made of, for example, acrylic resin, epoxy resin, polyimide, etc. An organic insulating layer can be used. By forming the overcoat layer 268, e.g. For example, it is possible to suppress the diffusion of impurities contained in the colored layer 266 to the light emitting element 125 side. However, the overcoat layer 268 is not necessarily provided. A structure in which the overcoat layer 268 is not formed may also be used.

[0181] Alternatively, a light-transmitting conductive film may be formed as the overcoat layer 268. By providing a light-transmitting conductive film as the coating layer 268, the light emitted from the light-emitting element 125 can be The ionized light 235 can be transmitted through the filter 232 while preventing the transmission of ionized impurities.

[0182] The light-transmitting conductive film is, for example, made of indium oxide or indium tin oxide (ITO). Indium Tin Oxide, zinc oxide, gallium doped In addition to graphene, a light-transmitting material such as zinc oxide can be used. Alternatively, a metal film formed thin enough to be thin enough to be transparent may be used.

[0183] Through the above steps, structures such as the light blocking layer 264 can be formed on the element formation substrate 141.

[0184] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0185] (Embodiment 3) The configuration of the display device 100 having a top emission structure is modified to have a bottom emission structure. A display device 150 can be fabricated.

[0186] FIG. 11 shows an example of a cross-sectional configuration of a display device 150 having a bottom emission structure. In FIG. 1(A) which is a perspective view of the display device 100, a portion indicated by a dashed line A1-A2 is shown. The display device 150 having the bottom emission structure includes a light-shielding layer 264. The positions of the color layer 266 and the overcoat layer 268 are different from those of the display device 100. Specifically, in the display device 150, a light-shielding layer 264, a colored layer 266, and an overcoat A conductive layer 268 is formed on the substrate 111 .

[0187] In the display device 150, the insulating layer 145 is formed directly on the substrate 121, and the adhesive layer 120 is That is, the insulating layer 145 can be bonded to the substrate 111 via the element forming substrate 1. Since there is no need to displace the element formation substrate 141, the peeling layer 143, and the adhesive layer 142, This can eliminate the need for a second electrode. This can improve the productivity and yield of the display device. The other components of the display device 150 can be formed in the same manner as the display device 100. do.

[0188] In addition, the display device 150 having the bottom emission structure has the electrode 115 made of a light-transmitting conductive material. The electrode 118 is formed of a conductive material that efficiently reflects the light emitted by the EL layer 117. It is formed using a conductive material.

[0189] The display device 150 transmits light 235 emitted from the EL layer 117 to the substrate 262 via the colored layer 266. It can be launched from the 111 side.

[0190] In the display device 150, the transistors constituting the driving circuit 133 are The transistor 272 is the same as the transistor 252. However, the electrode 263 can be formed in a region on the insulating layer 210 that overlaps with the semiconductor layer 208. The electrode 263 is formed by the same material and method as the gate electrode 206. It can be achieved.

[0191] The electrode 263 can function as a gate electrode. When either the electrode 261 or the electrode 262 is simply referred to as a "gate electrode," the other is referred to as a "back gate." In addition, either the gate electrode 206 or the electrode 263 may be referred to as One may be called the "first gate electrode" and the other may be called the "second gate electrode."

[0192] In general, the back gate electrode is made of a conductive film, and the gate electrode and the back gate electrode form a semiconductor. The back gate electrode is disposed so as to sandwich the channel forming region of the layer. The back gate electrode can function in the same manner as the gate electrode. The potential of the back gate electrode may be changed to the GND potential or any other potential. By changing the voltage, the threshold voltage of the transistor can be changed.

[0193] In addition, since the gate electrode and the back gate electrode are made of a conductive film, they can be easily The function of preventing the electric field generated from acting on the semiconductor layer in which the channel is formed (especially static electricity It also has electrostatic shielding function against

[0194] In addition, when light is incident from the back gate electrode side, the back gate electrode is made of a material having a light blocking property. By forming the semiconductor layer from a conductive film, light is prevented from entering the semiconductor layer from the back gate electrode side. This prevents the semiconductor layer from being photodegraded and the threshold voltage of the transistor is shifted. This can prevent deterioration of electrical characteristics such as the occurrence of

[0195] By providing the gate electrode 206 and the electrode 263 with the semiconductor layer 208 interposed therebetween, By setting the electrode 206 and the electrode 263 at the same potential, the carriers in the semiconductor layer 208 Since the area in which the carriers flow becomes larger in the film thickness direction, the amount of carrier movement increases. As a result, the on-state current of the transistor increases and the field effect mobility increases.

[0196] In addition, the gate electrode 206 and the electrode 263 each have a function of blocking an electric field from the outside. Therefore, the charge existing below the gate electrode 206 and above the electrode 263 is This does not affect the semiconductor layer 208. As a result, stress tests (e.g., applying a negative voltage to the gate) Gate Bias-Temperature (GBT) stress test The change in threshold voltage before and after the GBT stress test, in which a positive voltage is applied to the gate, is small. In addition, it is necessary to suppress the fluctuation of the on-current rise voltage at different drain voltages. This can be done.

[0197] The BT stress test is a type of accelerated test that measures the transistor damage caused by long-term use. The change in the characteristics of the BT struts (i.e., aging) can be evaluated in a short time. The amount of change in the threshold voltage of a transistor before and after the load test is an important factor for investigating reliability. The smaller the change in threshold voltage before and after the BT stress test, the better the performance. It can be said that this is a highly reliable transistor.

[0198] Also, the gate electrode 206 and the electrode 263 are included, and the gate electrode 206 and the electrode 26 By making the potentials of the transistors 3 and 4 the same, the variation in the threshold voltage is reduced. At the same time, the variation in electrical characteristics of the transistors is reduced.

[0199] In addition, a back gate electrode is provided in the transistor 232 formed in the display region 131. Good too.

[0200] A touch sensor may be provided similarly to the cases shown in Figs. 15 and 16. 17, as shown in Figure 18.

[0201] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0202] (Embodiment 4) In this embodiment, a configuration example of a light-emitting element that can be used as the light-emitting element 125 will be described. Note that the EL layer 320 in this embodiment is the same as the EL layer 117 in the other embodiments. is equivalent to.

[0203] <Configuration of light-emitting element> The light-emitting element 330 shown in FIG. 12A has an EL element between a pair of electrodes (electrode 318 and electrode 322). In the following description of the present embodiment, the layer 320 is taken as an example. Assume that electrode 318 is used as an anode and electrode 322 is used as a cathode.

[0204] The EL layer 320 may be formed to include at least a light-emitting layer. The functional layer other than the light-emitting layer may be a layered structure including a functional layer having a high hole injection property. materials with high hole transport properties, materials with high electron transport properties, materials with high electron injection properties, A layer containing a material having a high electron and hole transporting property can be used. In particular, functional layers such as a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer are appropriately combined. It can be used.

[0205] The light-emitting element 330 shown in FIG. 12A is irradiated with the potential difference generated between the electrode 318 and the electrode 322. More current flows, and holes and electrons recombine in the EL layer 320 to emit light. That is, the structure is such that a light-emitting region is formed in the EL layer 320.

[0206] In the present invention, the light emitted from the light-emitting element 330 is taken out to the outside from the side of the electrode 318 or the electrode 322. Therefore, either one of the electrode 318 or the electrode 322 is made of a light-transmissive substance.

[0207] Note that the EL layer 320 may be laminated in plurality between the electrode 318 and the electrode 322 as in the light-emitting element 331 shown in Fig. 12(B). When having an n-layer (n is a natural number of 2 or more) laminated structure, it is preferable to provide a charge generation layer 320a between the m-th (m is a natural number satisfying 1 ≦ m < n) EL layer 320 and the (m + 1)-th EL layer 320, respectively.

[0208] The charge generation layer 320a can be formed by appropriately combining a composite material of an organic compound and a metal oxide, a metal oxide, a composite material of an organic compound and an alkali metal, an alkaline earth metal, or a compound thereof, in addition to these. As the composite material of an organic compound and a metal oxide, for example, it contains an organic compound and a metal oxide such as vanadium oxide, molybdenum oxide, or tungsten oxide. As the organic compound, various compounds such as aromatic amine compounds, carbazole derivatives, low molecular compounds such as aromatic hydrocarbons, or oligomers, dendrimers, polymers, etc. of these low molecular compounds can be used. Note that as the organic compound, a hole-transporting organic compound having a hole mobility of 10 -6 cm 2 / Vs or more is applied. ​​​​​​​​​​​​However, other materials may be used as long as they have a higher hole transporting property than an electron transporting property. In addition, the materials used for the charge generation layer 320a have a carrier injection property, a carrier Since the material has excellent anode transport properties, the light emitting device 330 can be driven at low current and low voltage. It is possible.

[0209] The charge generating layer 320a is made of a composite material of an organic compound and a metal oxide, and other materials. For example, a layer including a composite material of an organic compound and a metal oxide and a layer including an electron transport layer may be formed. A compound selected from among the electroconductive materials and a layer containing a compound having high electron transport properties are combined. Alternatively, a layer containing a composite material of an organic compound and a metal oxide and a transparent conductive film may be combined. may be formed in combination with each other.

[0210] The light emitting device 331 having such a configuration may have problems such as energy transfer and quenching. It is difficult to achieve this, and the range of materials to choose from is expanding, making it possible to develop light-emitting devices that have both high luminous efficiency and a long life. It is also easy to obtain phosphorescence in one light-emitting layer and fluorescence in the other. It is.

[0211] The charge generating layer 320a is a layer that generates a charge when a voltage is applied between the electrodes 318 and 322. The layer 320a has a function of injecting holes into the EL layer 320 formed in contact with the generating layer 320a. The other EL layer 320 has a function of injecting electrons.

[0212] The light-emitting element 331 shown in FIG. 12B can be obtained by changing the type of light-emitting material used in the EL layer 320. By using multiple luminescent materials with different luminescent colors, various luminescent colors can be obtained. By using luminescent materials, it is possible to obtain broad spectrum emission or white light emission. do.

[0213] When white light is to be emitted using the light-emitting element 331 shown in FIG. 12B, a combination of a plurality of EL layers is used. In combination, it is sufficient if the device emits white light containing red, blue, and green light. For example, The light-emitting layer contains a blue fluorescent material as a light-emitting material, and the light-emitting layer contains green and red phosphorescent materials as light-emitting materials. In addition, a light-emitting layer that emits red light and a light-emitting layer that emits green light may be used. Alternatively, the light-emitting layer may have a structure in which the light-emitting layer exhibits blue light emission is included. Even if the device has a light-emitting layer that emits light of complementary colors, white light can be obtained. In a stacked element in which two layers are stacked, the color of the light emitted from the light-emitting layer and the color of the light emitted from the light-emitting layer are When the colors of the emitted light are complementary to each other, the complementary colors are blue and yellow, or Examples include blue-green and red.

[0214] In the above-mentioned laminated element, a charge generating layer is disposed between the laminated light emitting layers. This makes it possible to realize a long-life element in the high-luminance region while keeping the current density low. In addition, the voltage drop due to the resistance of the electrode material can be reduced, allowing for uniform generation over a large area. Light becomes possible.

[0215] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0216] (Embodiment 5) In this embodiment, examples of electronic devices and lighting devices to which the display device of one embodiment of the present invention is applied will be described. The following description will be given with reference to the drawings.

[0217] As an example of an electronic device to which a display device having a flexible shape is applied, a television Equipment (also called television or television receiver), monitors for computers, digital digital cameras, digital video cameras, digital photo frames, mobile phones (mobile phones, Mobile phone devices, portable game machines, portable information terminals, audio playback devices, pachinko machines, etc. Examples include large gaming consoles.

[0218] In addition, lighting devices and display devices can be mounted on the interior or exterior walls of houses and buildings, and on the interior or exterior of automobiles. It is also possible to incorporate the device along a curved surface.

[0219] FIG. 13A shows an example of a mobile phone. A mobile phone 7400 includes a housing 7401. In addition to the display unit 7402, operation buttons 7403, an external connection port 7404, The mobile phone 7400 is equipped with a speaker 7405, a microphone 7406, etc. The device is used for the display portion 7402 .

[0220] In the mobile phone 7400 shown in FIG. 13A, information is displayed by touching the display portion 7402 with a finger or the like. You can also make calls, enter text, or do any other kind of An operation can be performed by touching the display portion 7402 with a finger or the like.

[0221] In addition, by operating the operation button 7403, the power can be turned on and off, and the display unit 7402 can be displayed. For example, you can change the type of image displayed from the main menu to the email composition screen. You can switch to the screen.

[0222] Here, the display device of one embodiment of the present invention is incorporated in the display portion 7402. As a result, a highly reliable mobile phone can be provided with a curved display section.

[0223] FIG. 13B shows an example of a wristband-type display device. The device includes a housing 7101, a display unit 7102, an operation button 7103, and a transmission / reception device 7104. can.

[0224] The portable display device 7100 can receive a video signal by a transmitting / receiving device 7104. Video can be displayed on the display unit 7102. Audio signals can also be sent to other receiving devices. It is also possible.

[0225] In addition, the operation button 7103 can be used to turn the power on and off and to switch the image to be displayed. , or adjust the volume of the audio.

[0226] Here, the display device of one embodiment of the present invention is incorporated in the display portion 7102. As a result, a highly reliable portable display device can be provided that has a curved display portion.

[0227] 13C to 13D show an example of a lighting device. The lighting device 7210 and the illumination device 7220 are each provided with a base 72 having an operation switch 7203. 01 and a light emitting part supported by a base part 7201.

[0228] The light-emitting portion 7212 of the lighting device 7210 shown in FIG. 13C has two convexly curved The light emitting parts are arranged symmetrically. It can illuminate the direction.

[0229] The lighting device 7220 shown in FIG. 13(D) includes a light-emitting portion 7222 that is curved in a concave shape. Therefore, in order to collect light emitted from the light emitting unit 7222 on the front surface of the lighting device 7220, It is suitable for brightly lighting an area.

[0230] In addition, the light-emitting units of the lighting devices 7200, 7210, and 7220 Since the light emitting part is flexible, it can be attached to a plastic member or a movable frame. The light emitting portion may be fixed with a member, and the light emitting surface of the light emitting portion may be freely curved according to the application.

[0231] Here, the light-emitting devices 7200, 7210, and 7220 each have The display device according to one embodiment of the present invention is incorporated in the curved display unit. It is possible to provide a highly reliable lighting device.

[0232] FIG. 14A shows an example of a portable display device. The display device 7300 includes a housing 7301, It includes a display unit 7302, an operation button 7303, a pull-out member 7304, and a control unit 7305. .

[0233] The display device 7300 is a flexible display unit wound in a roll in a cylindrical housing 7301. The display portion 7302 includes a first substrate on which a light-shielding layer and the like are formed, and a transistor. The display portion 7302 is disposed in the housing 7301. It is always wrapped so that the second substrate is on the outside.

[0234] In addition, the display device 7300 can receive a video signal through the control unit 7305. The display unit 7302 can display the above information. The control unit 7305 is also equipped with a battery. In addition, the control unit 7305 can be equipped with a connector to directly supply video signals and power. good.

[0235] In addition, the operation button 7303 can be used to turn the power on and off and to switch the image to be displayed. etc. can be carried out.

[0236] FIG. 14B shows a state in which the display portion 7302 is pulled out by a pull-out member 7304 . In this state, an image can be displayed on the display portion 7302. The positioned operation button 7303 allows easy operation with one hand.

[0237] In order to prevent the display unit 7302 from bending when the display unit 7302 is pulled out, A frame for reinforcement may be provided at the end of 2.

[0238] In addition to this configuration, a speaker is provided on the housing, and the device can be operated by receiving an audio signal together with the video signal. The configuration may be such that audio is output.

[0239] The display device of one embodiment of the present invention is incorporated in the display portion 7302. Since the unit 7302 is a flexible and reliable display device, the display device 7300 A lightweight and highly reliable display device can be obtained.

[0240] Note that the display device of one embodiment of the present invention can be used in the electronic devices and lighting devices described above. It goes without saying that there is no particular limitation.

[0241] The structures and methods described in this embodiment may be appropriately combined with the structures and methods described in other embodiments. They can be used in combination. [Explanation of symbols]

[0242] 100 display device 101 Element formation substrate 111 Substrate 112 Adhesive layer 113 Peeling layer 114 Bulkhead 115 Electrode 117 EL layer 118 Electrode 120 Adhesive layer 121 Substrate 122 Aperture 123 Anisotropic conductive connection layer 124 External electrode 125 Light emitting element 128 Aperture 129 Aperture 131 Display area 132 Drive circuit 133 Drive circuit 134 pixels 135 scan lines 136 Signal Line 141 Element formation substrate 142 Adhesive layer 143 Peeling layer 145 Insulating Layer 150 Display device 205 Insulating layer 206 Gate electrode 207 Gate Insulation Layer 208 Semiconductor layer 210 Insulating layer 211 Insulating layer 216 Terminal electrode 219 Wiring 232 Transistor 233 Capacitive element 235 light 241 Stress 242 Stress 252 Transistor 263 Electrode 264 Light blocking layer 266 Colored layer 268 Overcoat Layer 272 Transistor 318 Electrode 320 EL layer 322 Electrode 330 Light emitting element 331 Light-emitting element 431 Transistor 432 Liquid crystal element 435 nodes 436 nodes 437 nodes 7100 Portable display devices 7101 Case 7102 Display section 7103 Operation button 7104 Transmitting and receiving equipment 7200 Lighting Equipment 7201 Daibu 7203 Operation switch 7210 Lighting equipment 7212 Light emitting part 7220 Lighting Equipment 7222 Light emitting part 7300 display device 7301 Case 7302 Display section 7303 Operation button 7304 Materials 7305 Control Unit 7400 Mobile Phone 7401 Case 7402 Display section 7403 Operation button 7404 External connection port 7405 Speaker 7406 Mike 209a Source electrode 209b Drain electrode 320a Charge generating layer

Claims

1. A foldable, top-emission, active matrix light-emitting device, comprising: A flexible substrate; A display region having a light-emitting element, a scanning line driver circuit, and a terminal electrode electrically connected to an FPC are provided over a flexible substrate; the scanning line driving circuit is provided along one side in the long axis direction of the display area, a part of a flat surface of the light-emitting surface overlaps with a part of another flat surface of the light-emitting surface, and the light-emitting surface is folded so as to be on the inside; when folded, a part of the display area and a part of the scanning line driving circuit are located in a curved or bent area; When folded, the terminal electrodes are located in a region that is not curved or bent.

2. A foldable, top-emission active matrix light-emitting device, A flexible substrate; a display region having a light-emitting element and a transistor electrically connected to the light-emitting element, a scanning line driver circuit, and a terminal electrode electrically connected to an FPC, over a flexible substrate; the scanning line driving circuit is provided along one side in the long axis direction of the display area, a part of a flat surface of the light-emitting surface overlaps with a part of another flat surface of the light-emitting surface, and the light-emitting surface is folded so as to be on the inside; when folded, a part of the display area and a part of the scanning line driving circuit are located in a curved or bent area; When folded, the terminal electrodes are located in a region that is not curved or bent.

Images