Hydrophobic treatment device, hydrophobic treatment method, and computer storage medium

Abstract

To enable a hydrophobic treatment to both of a front surface and a back surface of a substrate.SOLUTION: A hydrophobic treatment device that performs a hydrophobic treatment of a substrate, includes: a treatment container that houses the substrate, and forms a treatment space; a first supply port that supplies a first gas to the substrate from an upper direction of the substrate in the treatment container; and a second supply port that supplies a second gas to the substrate from a position that is opposite to a center region of the substrate in a lower direction of the substrate of the treatment container. A hydrophobic gas can be supplied as the first gas from the first supply port and the second gas from the second supply port.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a hydrophobization treatment device, a hydrophobization treatment method, and a computer storage medium. [Background technology]

[0002] Patent Document 1 discloses a substrate processing apparatus for forming a friction reduction film on the back surface of a substrate. This substrate processing apparatus includes a processing vessel that accommodates a substrate and forms a sealed processing space, a heating unit that heats the back surface of the substrate in the processing vessel, and a supply unit that supplies a material for forming a friction reduction film toward the back surface of the substrate in the processing vessel. The substrate processing apparatus further includes a first gas supply unit that supplies an inert gas to the peripheral portion of the substrate from above the substrate in the processing vessel, a second gas supply unit that supplies an inert gas to the center side of the substrate from above the substrate in the processing vessel, and an exhaust unit that exhausts the atmosphere of the processing space from around or below the substrate in the processing vessel. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2022 / 196336 Summary of the Invention [Problem to be solved by the invention]

[0004] The technology according to the present disclosure makes it possible to subject both the front and back surfaces of a substrate to hydrophobic treatment. [Means for solving the problem]

[0005] One aspect of the present disclosure is a hydrophobization treatment apparatus for hydrophobizing a substrate, the apparatus comprising: a treatment vessel for accommodating the substrate and forming a treatment space; a first supply port for supplying a first gas to the substrate from above the substrate in the treatment vessel; and a second supply port for supplying a second gas to the substrate from a position below the substrate in the treatment vessel facing a central region of the substrate, the apparatus being configured to be capable of supplying a hydrophobization gas as the first gas from the first supply port and the second gas from the second supply port. Effect of the Invention

[0006] According to the present disclosure, both the front and back surfaces of a substrate can be subjected to hydrophobic treatment. [Brief description of the drawings]

[0007] [Figure 1] 1 is a cross-sectional view showing a schematic outline of the configuration of a hydrophobization treatment apparatus according to an embodiment of the present invention. [Diagram 2] FIG. [Diagram 3] 1 is a flowchart showing main steps of a first example of a processing sequence. [Figure 4] 1A and 1B are diagrams illustrating a state of a processing vessel when a first example of a processing sequence is being performed. [Diagram 5] 1A and 1B are diagrams illustrating a state of a processing vessel when a first example of a processing sequence is being performed. [Figure 6] 1A and 1B are diagrams illustrating a state of a processing vessel when a first example of a processing sequence is being performed. [Figure 7] 11 is a flowchart showing main steps of a processing sequence example 2. [Figure 8] 13A and 13B are diagrams illustrating a state of a processing vessel when a processing sequence example 2 is executed. [Figure 9] 13A and 13B are diagrams illustrating a state of a processing vessel when a processing sequence example 2 is executed. [Figure 10] 11 is a flowchart showing main steps of a processing sequence example 3. [Figure 11]11 is a flowchart showing main steps of a processing sequence example 4. [Figure 12] FIG. 13 is a diagram for explaining a first modification of the fourth example of the processing sequence. [Figure 13] 13 is a flowchart showing main steps of a processing sequence example 5. [Figure 14] FIG. 13 is a diagram for explaining a second modification of the fourth example of the processing sequence. [Figure 15] FIG. 13 is a diagram for explaining a modification of the first example of the processing sequence. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] In photolithography in the manufacturing process of semiconductor devices and the like, a hydrophobization process is performed to improve adhesion between a substrate such as a semiconductor wafer (hereinafter referred to as "wafer") and a resist solution. In this hydrophobization process, HMDS (Hexa Methyl Disilazane) gas is supplied to the surface of the substrate placed in a processing vessel for a predetermined period of time to hydrophobize the surface of the substrate. This makes it possible to prevent the resist film from peeling off from the surface of the substrate in a later process. In other words, the hydrophobization process can be said to be an adhesion process that imparts adhesion of a film to the surface of the substrate to be processed.

[0009] In addition, a hydrophobic film is formed on the back surface of the substrate as a friction reducing film or the like by hydrophobizing treatment, which reduces the adhesion distortion when the substrate is chucked to the stage of the exposure machine and improves the overlay. Hydrophobizing treatment can be said to be a friction reducing treatment that reduces the friction of the surface of the target substrate. It is preferable that such a substrate can be subjected to both a hydrophobic treatment on the front surface and a hydrophobic treatment on the back surface.

[0010] Therefore, the technology disclosed herein makes it possible to subject both the front and back surfaces of a substrate to hydrophobic treatment.

[0011] Hereinafter, a hydrophobization treatment apparatus and a hydrophobization treatment method according to the present embodiment will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are denoted by the same reference numerals, and duplicated explanations will be omitted.

[0012] <Hydrophobicity treatment device> Fig. 1 is a cross-sectional view showing a schematic outline of the configuration of a hydrophobization treatment device according to the present embodiment, Fig. 2 is a bottom view of a lid part of an upper member described later. 1 has a processing vessel C that accommodates a wafer W as a substrate and forms a processing space S. The processing vessel C includes a lower member 2 and an upper member 3, for example.

[0013] The lower member 2 includes a disk-shaped heat plate 20 having a radius larger than the radius of the wafer W, which is a substrate, and a flat cylindrical exterior part 21 that surrounds the heat plate 20 except for its upper surface.

[0014] The heater 22, which is a resistance heating element and forms a heating section, is provided in the hot plate 20. The heater 22 is divided into a plurality of concentric circles, for example, centered on the center of the hot plate 20, so that the surface of the hot plate 20 can be heated with high uniformity. In FIG. 1, the heater 22 is shown divided into two for convenience of illustration.

[0015] On the surface of the hot plate 20, a plurality of gap pins 23 (e.g., eight) are provided along a circle having a radius shorter than the radius of the wafer W, centered on the center of the hot plate 20. The height of each gap pin 23 is set to, for example, 0.1 mm from the surface of the hot plate 20. For convenience of illustration, only two gap pins 23 are shown in FIG.

[0016] Three lift pins 24 are provided in the circumferential direction along a circle centered on the center of the hot plate 20, penetrating the hot plate 20, nearer to the center of the gap pin 23. The three lift pins 24 are connected to a lift mechanism 26 via a lift member 25. The lift mechanism 26 has a driving source (not shown) such as a motor that generates a driving force for lifting and lowering the lift pins 24. For convenience of illustration, only two lift pins 24 are shown in FIG. 1.

[0017] The upper member 3 has a flat cylindrical lid 31 so as to cover the space above the lower member 2. The lower surface of the peripheral wall 32 of the lid 31 is formed so as to be close to the upper surface of the outer periphery of the exterior 21. The lid 31 is configured so as to be able to be raised and lowered between a first position and a second position by the lifting mechanism 4. The first position is a position where the lower surface of the peripheral wall 32 of the lid 31 and the upper surface of the outer periphery of the exterior 21 are close to each other, and the second position is a position where the wafer W is transferred between an external substrate transfer mechanism (not shown) and the lifting pins 24. The lid 31 lowered to the first position forms a processing space S between the lower member 2 and the ceiling 33 facing the hot plate 20 of the lid 31 lowered to the first position and the peripheral wall 32 form a processing space S between the hot plate 20.

[0018] The ceiling 33 of the lid 31 has a first supply port 41 that supplies a first gas to the wafer W from above the wafer W in the processing container C. The first supply port 41 selectively supplies a hydrophobizing gas such as HMDS gas or an inert gas such as nitrogen gas as the first gas, and opens to the processing space S.

[0019] The first supply port 41 includes, for example, a central supply port 42 and a peripheral supply port 43 . The central supply port 42 is formed at a position opposite to a second supply port 91 described later across the wafer W in the processing vessel C. Specifically, the central supply port 42 is formed at a position opposite to the center of the hot plate 20 in the ceiling portion 33 of the lid portion 31. The peripheral supply port 43 is formed at the following position. That is, as described later, the processing vessel C is configured to be able to evacuate from an exhaust position outside the wafer W in the processing vessel C, and the peripheral supply port 43 is formed between the central supply port 42 and the outer exhaust position. Specifically, the peripheral supply port 43 is formed at a position in the ceiling portion 33 of the lid portion 31 between the central supply port 42 and an upper peripheral exhaust port 121 described later.

[0020] The ceiling portion 33 of the lid portion 31 further has a central supply passage 44 extending from the central supply port 42 and a peripheral supply passage 45 extending from the peripheral supply port 43 .

[0021] A supply pipe 46 is connected to the central supply passage 44, and a supply mechanism 52 is connected to the supply pipe 46 via a branch pipe 51. The supply mechanism 52 supplies a hydrophobization gas such as HMDS to the central supply passage 44 via the branch pipe 51 and the supply pipe 46. The supply mechanism 52 has, for example, a supply source, i.e., a storage source, of the hydrophobization gas (not shown), and a supply device group (not shown) including an opening / closing valve and a flow rate control valve for controlling the flow of the hydrophobization gas. The HMDS gas is, for example, a mixed gas of HMDS vapor or mist and a carrier gas such as nitrogen gas. The HMDS vapor or mist is generated by vaporizing HMDS liquid with a vaporizer or by a known technique such as bubbling, and therefore details are omitted. A supply mechanism 62 is connected to the supply pipe 46 via a branch pipe 61. The supply mechanism 62 supplies an inert gas to the central supply path 44 via the branch pipe 61 and the supply pipe 46. The supply mechanism 62 has, for example, an inert gas supply source, i.e., a storage source (not shown), and a group of supply devices (not shown) including an on-off valve and a flow rate control valve for controlling the flow of the inert gas.

[0022] A supply pipe 47 is connected to the outer circumferential supply path 45, and a supply mechanism 72 is connected to the supply pipe 47 via a branch pipe 71. The supply mechanism 72 supplies a hydrophobization gas to the outer circumferential supply path 45 via the branch pipe 71 and the supply pipe 47. The supply mechanism 72 has, for example, a supply source, i.e., a storage source, of the hydrophobization gas (not shown), and a group of supply devices (not shown) including an opening / closing valve and a flow rate control valve for controlling the flow of the hydrophobization gas. Further, a supply mechanism 82 is connected to the supply pipe 47 via a branch pipe 81. The supply mechanism 82 supplies an inert gas to the outer peripheral supply path 45 via the branch pipe 81 and the supply pipe 47. The supply mechanism 82 has, for example, an inert gas supply source, i.e., a storage source (not shown), and a group of supply devices (not shown) including an on-off valve and a flow rate adjustment valve for controlling the flow of the inert gas.

[0023] 2, the peripheral supply port 43 is provided, for example, in a circular ring shape on the peripheral portion of the ceiling portion 33. That is, the peripheral supply port 43 is provided in plurality (for example, 100 or more) along the circumferential direction of the wafer W accommodated in the processing container C.

[0024] 1, the hot plate 20 has a second supply port 91 that supplies a second gas to the wafer W from a position facing a central region of the wafer W below the wafer W in the processing container C. The second supply port 91 selectively supplies a hydrophobizing gas such as HMDS gas or an inert gas such as nitrogen gas as the second gas, and opens to the processing space S.

[0025] The second supply port 91 is formed at a position on the hot plate 20 facing a central region of the wafer W in the processing container C. Note that the "position facing the central region of the wafer W" refers to a position at least partially overlapping with the center of the wafer W in a plan view.

[0026] The hot plate 20 further has a supply passage 92 extending from the second supply port 91 .

[0027] A supply pipe 93 is connected to the supply path 92, and a supply mechanism 102 is connected to the supply pipe 93 via a branch pipe 101. The supply mechanism 102 supplies a hydrophobization gas to the supply path 92 via the branch pipe 101 and the supply pipe 93. The supply mechanism 102 has, for example, a supply source, i.e., a storage source, of the hydrophobization gas (not shown), and a group of supply devices (not shown) including an opening / closing valve and a flow rate control valve for controlling the flow of the hydrophobization gas. Further, a supply mechanism 112 is connected to the supply pipe 93 via a branch pipe 111. The supply mechanism 112 supplies an inert gas to the supply path 92 via the branch pipe 111 and the supply pipe 93. The supply mechanism 112 has, for example, an inert gas supply source, i.e., a storage source (not shown), and a group of supply devices (not shown) including an on-off valve and a flow rate control valve for controlling the flow of the inert gas.

[0028] Furthermore, the processing vessel C is configured to be able to evacuate from an exhaust position outside the wafer W in the processing vessel C. Specifically, the processing vessel C has an upper peripheral exhaust port 121. The processing vessel C may also have a side exhaust port 122.

[0029] The upper peripheral exhaust port 121 is provided above and outside the wafer W in the processing vessel C, and opens into the processing space S. Specifically, the upper peripheral exhaust port 121 is provided, for example, in a circular ring shape on the peripheral portion of the ceiling portion 33. More specifically, as shown in FIG. 2, a plurality of upper peripheral exhaust ports 121 (for example, 100 or more) are provided on the peripheral portion of the ceiling portion 33 along the circumferential direction of the wafer W accommodated in the processing vessel C.

[0030] 1, the ceiling 33 of the lid 31 has an exhaust path 131 extending from the upper peripheral exhaust port 121. An exhaust mechanism 133 is connected to the exhaust path 131 via an exhaust pipe 132. The exhaust mechanism 133 includes an exhaust device such as a vacuum pump, and an exhaust equipment group including a valve for adjusting the amount of exhaust.

[0031] The side exhaust port 122 is formed on the side of the wafer W in the processing container C and below the upper peripheral exhaust port 121 so as to open to the processing space S. The side exhaust port 122 is formed in a ring shape by, for example, the inner lower surface of the peripheral wall portion 32 of the lid portion 31 and the inner upper surface of the outer periphery of the exterior portion 21. The side exhaust port 122 is connected to an exhaust path 142 provided on the outer periphery of the exterior portion 21 via, for example, an opening 141 provided on the upper surface of the outer periphery of the exterior portion 21. The openings 141 and the exhaust paths 142 are each arranged in a plurality of numbers along the circumferential direction of the exterior portion. An exhaust mechanism 144 is connected to each exhaust path 142 via an exhaust pipe 143. The exhaust mechanism 144 includes an exhaust device such as a vacuum pump, and an exhaust device group having a valve for adjusting the exhaust amount. When the processing space S is exhausted via the side exhaust port 122 and the exhaust path 142 , the atmosphere outside the processing vessel C is also sucked into the exhaust path 142 .

[0032] An upwardly recessed recess 151 is formed in a portion facing the opening 141 on the lower surface of the peripheral wall of the lid 31. The recess 151 constitutes a buffer space for uniformly exhausting the processing space S in the circumferential direction via the side exhaust port 122.

[0033] The hydrophobization treatment device 1 described above is provided with a control unit 200 that controls the hydrophobization treatment device 1. The control unit 200 is configured by a computer equipped with a processor such as a CPU, a memory, and the like, and has a program storage unit (not shown). The program storage unit stores a program including instructions for a processing sequence to be described later by the hydrophobization treatment device 1. For example, the lifting mechanisms 4, 26, the supply mechanisms 52, 62, 72, 82, 102, 112, and the exhaust mechanisms 133, 144 are controlled by the control unit 200 based on the program. The program may be recorded in a computer-readable storage medium H and installed in the control unit 200 from the storage medium H. The storage medium H may be temporary or non-temporary.

[0034] <Processing sequence example 1> Next, an example of a processing sequence performed by the hydrophobization treatment device 1 will be described. FIG. 3 is a flow chart showing main steps of processing sequence example 1. FIGS. 4 to 6 are diagrams showing the state of the processing container C when processing sequence example 1 is being performed. Note that the lift pins 24 and the gap pins 23 are not shown in FIGS. 4 to 6. Furthermore, in FIGS. 4 to 6, the flow of the hydrophobization gas in the processing space S is indicated by solid arrows, and the flow of the inert gas in the processing space S is indicated by dotted arrows. This is the same in the subsequent figures. The following steps of the processing sequence example 1 are executed under the control of the control unit 200 based on the program stored in the above-mentioned program storage unit (not shown). The same applies to examples other than the processing sequence example 1.

[0035] (Step S1) A wafer W, both of whose front and back surfaces are to be subjected to the hydrophobic treatment, is first loaded into a treatment container C, for example, as shown in FIG. Specifically, the wafer W is moved by an external substrate transfer mechanism (not shown) between the lid part 31, which has been raised to the above-mentioned second position, and the hot plate 20. Thereafter, the lift pins 24 are raised, whereby the wafer W is transferred from the substrate transfer mechanism to the lift pins 24 and moved to the transfer position. Thereafter, the substrate transfer mechanism is withdrawn from the processing vessel C. In addition, the lid part 31 is lowered to the above-mentioned first position, and the processing space S is formed by the lid part 31 and the lower member 2. At this time, the wafer W is supported on the lift pins 24 so that the center of the wafer W coincides with the center of the heat plate 20, that is, the center of the second supply port 91, within a predetermined tolerance.

[0036] (Step S2) Next, a hydrophobization gas is supplied to the front surface and the back surface of the wafer W. Specifically, these hydrophobization gases are supplied simultaneously. More specifically, the wafer W supported by the lift pins 24 is moved to an upper processing position above the gap pins 23. The upper processing position is a position spaced apart from the surface of the hot plate 20 and the tops of the gap pins 23, for example, 2 mm from the surface of the hot plate 20. 4, a hydrophobization gas is supplied from the central supply port 42 toward the center of the front surface of the wafer W, and a hydrophobization gas is supplied from the second supply port 91 toward the center of the back surface of the wafer W. No gas is supplied from the peripheral supply port 43. In addition, the processing space S is exhausted through the upper peripheral exhaust port 121 and through the side exhaust port 122.

[0037] As a result, the hydrophobization gas from the central supply port 42 flows from the center of the wafer W to the outside along the front surface of the wafer W, and the hydrophobization gas from the second supply port 91 flows from the center of the wafer W to the outside along the back surface of the wafer W. As a result, a hydrophobic film is formed on the entire front and back surfaces of the wafer W. In addition, since the wafer W is separated from the heating plate 20 and is at a relatively low temperature, physical adsorption of the constituent molecules of the hydrophobic film can be promoted on the entire front and back surfaces of the wafer W.

[0038] For example, when a predetermined time has elapsed after the start of supplying the hydrophobization gas, this step S2 ends.

[0039] In this step S2, exhaust through the upper peripheral exhaust port 121 and exhaust through the side exhaust port 122 are performed, for example, so that the gas containing the hydrophobization gas does not leak out of the processing vessel C and the atmosphere outside the processing vessel C does not flow into the processing space S. Specifically, control is performed so as to satisfy the following formulas (a) and (b). L1+L2 <L11+L12 …(a) L11 <L12 …(b) L1: Supply flow rate of hydrophobization gas from the central supply port 42 L2: Supply flow rate of hydrophobization gas from the second supply port 91 L11: exhaust flow rate through the upper peripheral exhaust port 121 L12: exhaust flow rate through exhaust passage 142 leading to side exhaust port 122

[0040] In step S2, the exhaust through the upper peripheral exhaust port 121 and the exhaust through the side exhaust port 122 may be performed so as to satisfy the following formula (c). L1+L2>L11 …(c)

[0041] If the exhaust flow rate through the upper peripheral exhaust port 121 is too high, the hydrophobizing gas will have difficulty flowing into the portion of the back surface of the wafer W that corresponds to the rear of the lift pins 24 when viewed from the center of the wafer W, causing the hydrophobicity of the back surface of the wafer W to become non-uniform within the surface. However, this can be suppressed by satisfying the above (c).

[0042] Furthermore, in step S2, exhaust through the upper peripheral exhaust port 121 and exhaust through the side exhaust port 122 may be performed so as to satisfy the following formula (d). L13>L11 …(d) L13: exhaust flow rate from the processing space S via the side exhaust port 122

[0043] By exhausting from both the upper peripheral exhaust port 121 close to the front surface side of the wafer W and the side exhaust port 122 close to the back surface side of the wafer W, it is easy to suppress both the leakage of the hydrophobization gas supplied to the front surface to the back surface (hereinafter referred to as leakage from the front surface to the back surface) and the leakage of the hydrophobization gas supplied to the back surface to the front surface (hereinafter referred to as leakage from the back surface to the front surface). During processing, the spatial height above the wafer W may be greater than the spatial height below the wafer W. In this case, the flow velocity tends to be relatively higher below the wafer W than above, and the high-velocity airflow formed below the wafer W suppresses the above-mentioned wraparound from the front surface to the back surface. The condition L13>L11 in (d) above is a condition that, when the spatial height relationship is as described above, a high flow velocity is formed below the wafer W, and the airflow below the wafer W, i.e., the back surface side airflow, is urged toward the side exhaust port 122 below the upper peripheral exhaust port 121. Therefore, this condition is considered to be favorable for both wraparound from the front surface to the back surface and wraparound from the back surface to the front surface.

[0044] Under the condition of L12>L13, the atmosphere outside the processing vessel C is sucked into the exhaust path 142 together with the gas in the processing space S by exhaust through the exhaust path 142, and the gas in the processing space S can be prevented from leaking outside the processing vessel C. That is, in the case where the spatial height relationship is as described above, under the condition of L12>L13>L11, the gas including the hydrophobizing gas can be prevented from leaking outside the processing vessel C and the gas can be prevented from wrapping around between the front side and the back side of the wafer W as described above. As an example of a configuration that satisfies the condition of L12>L13, the gap at the side exhaust port 122 can be set larger than the gap that communicates with the exhaust path 142 and the space outside the processing vessel C on the outside.

[0045] (Step S3) Next, heat treatment is performed on the front and back surfaces of the wafer W. Specifically, these heat treatments are performed simultaneously. More specifically, the supply of hydrophobization gas from the central supply port 42 toward the center of the front surface of the wafer W and the supply of hydrophobization gas from the second supply port 91 toward the center of the back surface of the wafer W are stopped. At the same time, the lift pins 24 are lowered, and the wafer W is placed on the heating plate 20 as shown in Fig. 5, that is, the wafer W is transferred from the lift pins 24 to the gap pins 23. As a result, the wafer W is heated, and the hydrophobic films formed on the front and back surfaces of the wafer W are heat-treated at a relatively high temperature, promoting chemical adsorption of the constituent molecules of the hydrophobic film to the front and back surfaces of the wafer W.

[0046] For example, when a predetermined time has elapsed after the wafer W is placed on the heating plate 20, this step S3 ends.

[0047] In step S3, evacuation of the processing space S through the upper peripheral exhaust port 121 and the side exhaust port 122 continues from step S2. No inert gas is supplied from the central supply port 42 and the second supply port 91, and no gas is supplied from the peripheral supply port 43.

[0048] During the heat treatment in step S3, the hydrophobizing gas or the inert gas is not supplied to the rear surface of the wafer W from the second supply port 91, so that the wafer W can be prevented from floating from the heating plate 20.

[0049] (Step S4) Next, the atmosphere in the processing container C is replaced with an inert gas. Specifically, the lift pins 24 are raised, and the wafer W is transferred from the heat plate 20 to the lift pins 24, and is moved to a replacement position above the gap pins 23. The replacement position may be the same as the above-mentioned upper processing position. 6, inert gas is supplied from the central supply port 42 toward the center of the front surface of the wafer W, and from the second supply port 91 toward the center of the back surface of the wafer W. In addition, inert gas is not supplied from the peripheral supply port 43 in this example, but may be supplied. Also, evacuation of the processing space S via the upper peripheral exhaust port 121 and the side exhaust port 122 are continuously performed from steps S2 and S3.

[0050] As a result, the hydrophobizing gas in the processing space S is replaced with the inert gas. During this replacement, as described above, if the wafer W is moved to the replacement position and separated from the heat plate 20 (specifically, from the gap pin 23), the hydrophobizing gas near the back surface of the wafer W can be prevented from remaining in the processing container C during the replacement. For example, when a predetermined time has elapsed after the supply of the inert gas has started, this step S4 ends.

[0051] In addition, the sum of the supply flow rate L21 of the inert gas from the central supply port 42 and the supply flow rate L22 of the inert gas from the second supply port 91 in step S4 may be equal to or less than the sum of the supply flow rate L1 of the hydrophobization gas from the central supply port 42 and the supply flow rate L2 of the hydrophobization gas from the second supply port 91 in step S2. That is, L21+L22≦L1+L2 may be satisfied. This makes it possible to prevent the gas containing the hydrophobization gas from leaking out of the processing vessel C in step S4 without changing the sum (L11+L12) of the exhaust flow rate L11 through the upper peripheral exhaust port 121 and the exhaust flow rate L12 through the exhaust path 142 leading to the side exhaust port 122 from step S2.

[0052] Furthermore, when L21+L22>L1+L2, in step S4, L11+L12 needs to be made higher than in step S2 to prevent the gas containing the hydrophobization gas from leaking out of the processing vessel C, but the efficiency of replacing the atmosphere in the processing vessel C can be improved. That is, in step S4, the efficiency of replacing the atmosphere in the processing vessel C can be improved by making the total supply flow rate and the total exhaust flow rate of the inert gas higher than in step S2. In this case, the leakage of the gas containing the hydrophobization gas out of the processing vessel C can be prevented by increasing the total exhaust flow rate and then increasing the total supply flow rate of the inert gas.

[0053] (Step S5) Then, the wafer W is unloaded from the processing chamber C. Specifically, for example, the supply of the inert gas from the central supply port 42 toward the center of the front surface of the wafer W and the supply of the inert gas from the second supply port 91 toward the center of the back surface of the wafer W are stopped, and then the exhaust of the processing space S through the upper peripheral exhaust port 121 and the exhaust of the processing space S through the side exhaust port 122 are also stopped. Next, the cover 31 is raised to the above-mentioned second position, and the lift pins 24 are raised, and the wafer W is raised to the transfer position while being supported by the lift pins 24. Next, the substrate transfer mechanism is inserted into the processing vessel C between the cover 31 and the hot plate 20, and then the lift pins 24 are lowered, and the wafer W is transferred to the substrate transfer mechanism. Then, the substrate transfer mechanism is withdrawn from the processing vessel C, and the wafer W is carried out of the processing vessel C.

[0054] This completes the processing sequence. According to the process sequence example 1, the wafer W is at a low temperature when the hydrophobization gas is supplied to the surface, and therefore the amount of constituent molecules of the hydrophobic film physically adsorbed on the wafer surface is large, compared to the process sequence example 2 described later. Therefore, the contact angle of the hydrophobic film on the surface of the wafer W can be made large. The purpose of forming a hydrophobic film on the front surface of the wafer W is, for example, to improve adhesion between a resist film to be formed later and the wafer W. The purpose of forming a hydrophobic film on the rear surface of the wafer W is, for example, to improve overlay during exposure as described above by using a friction reduction film as a hydrophobic film.

[0055] <Processing sequence example 2> Fig. 7 is a flowchart showing main steps of the processing sequence example 2. Fig. 8 and Fig. 9 are views showing the state of the processing vessel C when the processing sequence example 2 is performed. Similar to the processing sequence example 1, the processing sequence example 2 is applied to a wafer W having both the front and back surfaces to be hydrophobized. However, while in the processing sequence example 1, the hydrophobization gas is supplied to the front surface of the wafer W and the hydrophobization gas is supplied to the back surface thereof simultaneously, in the processing sequence example 2, these supplies are performed in order, specifically, the hydrophobization gas is supplied to the front surface of the wafer W and then the hydrophobization gas is supplied to the back surface thereof. This will be described in more detail below.

[0056] (Step S11) 7, in the process sequence example 2, after step S1, a hydrophobization gas is supplied to the surface of the wafer W, and a heat treatment is performed on the surface of the wafer W. Specifically, these are performed simultaneously. More specifically, the lift pins 24 are lowered, and the wafer W is placed on the hot plate 20 as shown in Fig. 8, that is, transferred from the lift pins 24 to the gap pins 23. A hydrophobizing gas is supplied from the central supply port 42 toward the central portion of the surface of the wafer W. No gas is supplied from the second supply port 91 and the peripheral supply port 43. The processing space S is exhausted through the upper peripheral exhaust port 121 and the side exhaust port 122.

[0057] As a result, the hydrophobizing gas from the central supply port 42 flows along the surface of the wafer W from the center to the outside of the wafer W. As a result, a hydrophobic film is formed on the entire surface of the wafer W.

[0058] Furthermore, the wafer W is heated by the heating plate 20, so that the hydrophobic film formed on the surface of the wafer W is heat-treated.

[0059] For example, after the wafer W is placed on the heating plate 20 and the supply of the hydrophobization gas is started, when a predetermined time has elapsed, this step S11 ends.

[0060] (Step S12) Next, a hydrophobizing gas is supplied to the rear surface of the wafer W. Specifically, the lift pins 24 are raised, and the wafer W is transferred from the heat plate 20 to the lift pins 24 and moved to the above-mentioned upper processing position. 9, a hydrophobization gas is supplied from the second supply port 91 toward the center of the back surface of the wafer W. In addition, the processing space S is exhausted via the upper peripheral exhaust port 121 and the side exhaust port 122. As a result, the hydrophobization gas from the second supply port 91 flows along the rear surface of the wafer W from the center to the outside of the wafer W. As a result, a hydrophobic film is formed on the entire rear surface of the wafer W.

[0061] Furthermore, the inert gas is supplied from the central supply port 42 toward the central portion of the front surface of the wafer W, and the inert gas is supplied from the peripheral supply port 43 toward the peripheral portion of the front surface of the wafer W. This makes it possible to prevent the hydrophobization gas supplied to the rear surface of the wafer W from flowing around to the front surface of the wafer W. It should be noted that no hydrophobizing gas is supplied from the central supply port 42 and the peripheral supply port 43 .

[0062] In this step S12, exhaust through the upper peripheral exhaust port 121 and exhaust through the side exhaust port 122 are performed, for example, so that the gas containing the hydrophobization gas does not leak out of the processing vessel C and the atmosphere outside the processing vessel C does not flow into the processing space S. Specifically, control is performed so as to satisfy the above-mentioned formula (b) and the following formula (e). L21+L23+L2 <L11+L12 …(e) L23: Flow rate of inert gas supplied from the peripheral supply port 43

[0063] In step S12, the exhaust through the upper peripheral exhaust port 121 and the exhaust through the side exhaust port 122 may be performed so as to satisfy the following formula (f). L21+L23+L2>L11 …(f)

[0064] If the exhaust flow rate through the upper peripheral exhaust port 121 is too high, the hydrophobizing gas will have difficulty flowing into the portion of the back surface of the wafer W that corresponds to the rear of the lift pins 24 when viewed from the center of the wafer W, causing the hydrophobicity of the back surface of the wafer W to become non-uniform within the surface. However, this can be suppressed by satisfying the above (f).

[0065] In step S12, similarly to step S2 described above, exhaust through upper peripheral exhaust port 121 and exhaust through side exhaust port 122 may be performed so as to satisfy the above-mentioned formula (d).

[0066] (Step S13) Subsequently, a heat treatment is performed on the rear surface of the wafer W. Specifically, the heat treatment on the rear surface of the wafer W and the re-heat treatment on the front surface of the wafer W are performed simultaneously. More specifically, the supply of the hydrophobizing gas from the second supply port 91 toward the center of the back surface of the wafer W, the supply of the inert gas from the central supply port 42 toward the center of the front surface of the wafer W, and the supply of the inert gas from the peripheral supply port 43 toward the peripheral part of the front surface of the wafer W are stopped. At the same time, the lift pins 24 are lowered, and the wafer W is placed on the heating plate 20 as in Fig. 5, that is, transferred from the lift pins 24 to the gap pins 23. As a result, the wafer W is heated, the hydrophobic film formed on the back surface of the wafer W is heat-treated, and the hydrophobic film formed on the front surface of the wafer W is re-heat-treated.

[0067] For example, when a predetermined time has elapsed after the wafer W is placed on the heating plate 20, this step S13 ends.

[0068] In step S13, evacuation of the processing space S through the upper peripheral exhaust port 121 and the side exhaust port 122 is continued from step S12. No gas is supplied from the central supply port 42 and the peripheral supply port 43.

[0069] Thereafter, similarly to the example 1 of the processing sequence, steps S4 and S5 are carried out.

[0070] <Processing sequence example 3> FIG. 10 is a flowchart showing main steps of the processing sequence example 3. In the process sequence example 3, similarly to the process sequence example 2, the hydrophobization gas is supplied to the front surface of the wafer W and then to the back surface of the wafer W. However, in the process sequence example 3, unlike the process sequence example 2, the hydrophobization gas is supplied to the back surface of the wafer W and then to the front surface of the wafer W. This will be described in more detail below.

[0071] (Step S21) 10, in the processing sequence example 3, after step S1, step S12 in the processing sequence example 2 is performed, that is, a hydrophobization gas is supplied to the back surface of the wafer W. Thereafter, a hydrophobization gas is supplied to the front surface of the wafer W, and the front surface and back surface of the wafer W are heat-treated. Specifically, these are performed simultaneously. More specifically, the lift pins 24 are lowered, and the wafer W is placed on the hot plate 20, that is, transferred from the lift pins 24 to the gap pins 23. As in FIG. 8, the hydrophobization gas is supplied from the central supply port 42 toward the center of the surface of the wafer W. Specifically, the supply of the hydrophobization gas from the second supply port 91, the supply of the inert gas from the central supply port 42, and the supply of the inert gas from the peripheral supply port 43, which were performed in step S12, are stopped, and the hydrophobization gas is supplied from the central supply port 42 toward the center of the surface of the wafer W. Furthermore, the exhaust of the processing space S through the upper peripheral exhaust port 121 and the exhaust of the processing space S through the side exhaust port 122 are continuously performed from step S12.

[0072] As a result, the hydrophobizing gas from the central supply port 42 flows along the surface of the wafer W from the center to the outside of the wafer W. As a result, a hydrophobic film is formed on the entire surface of the wafer W.

[0073] Furthermore, the wafer W is heated by the heating plate 20, whereby the hydrophobic films formed on the front and rear surfaces of the wafer W are heat-treated.

[0074] For example, after the wafer W is placed on the heating plate 20 and the supply of the hydrophobization gas is started, when a predetermined time has elapsed, this step S21 ends.

[0075] Thereafter, steps S4 and S5 are carried out in the same manner as in the example 1 of the processing sequence. According to the processing sequence example 3, the number of steps is smaller than that of the processing sequence example 2, and therefore the time required to hydrophobize both the front and back surfaces of the wafer W can be shortened. In addition, since the hydrophobization treatment of the front surface of the wafer W is performed in the same manner as in an existing apparatus that hydrophobizes only the front surface, knowledge obtained by using the above-mentioned existing apparatus can be utilized to adjust the hydrophobization conditions of the front surface, where uniformity and the like are more important. In other words, the hydrophobization treatment of the front surface of the wafer W has high compatibility with the above-mentioned existing apparatus.

[0076] In step S21, when the hydrophobization gas is supplied from the central supply port 42 toward the central portion of the front surface of the wafer W, the following may be performed. That is, the supply of the hydrophobization gas from the second supply port 91 performed in step S12 may be stopped, then the supply of the inert gas from the central supply port 42 also performed in step S12 may be stopped, and then the supply of the hydrophobization gas from the central supply port 42 may be started and the supply of the inert gas from the peripheral supply port 43 may be stopped. This makes it possible to more reliably prevent the hydrophobization gas supplied from the central supply port 42 to the front surface of the wafer W from flowing around to the back surface of the wafer W.

[0077] <Processing sequence example 4> FIG. 11 is a flowchart showing main steps of the fourth example of the processing sequence. Unlike the process sequence example 1 and the like, the process sequence example 4 is applied to a wafer W whose only surface is to be subjected to hydrophobic processing.

[0078] 11, in the process sequence example 4, after step S1, step S11 is performed, that is, a hydrophobizing gas is supplied to the surface of the wafer W, and a heat treatment is performed on the surface of the wafer W. Specifically, these are performed simultaneously after step S1. Then, steps S4 and S5 are performed.

[0079] This processing sequence is highly compatible with existing equipment that performs hydrophobic processing only on the surface of a wafer W.

[0080] <Modification 1 of Processing Sequence Example 4> FIG. 12 is a diagram for explaining a first modification of the fourth example of the processing sequence. In the above example 4 of the processing sequence, the supply of hydrophobizing gas to the surface of the wafer W and the heat treatment of the surface of the wafer W are performed simultaneously, but the heat treatment of the surface of the wafer W may be performed after the supply of the hydrophobizing gas to the surface of the wafer W. In this case, for example, with the wafer W supported by the lift pins 24 moved to the above-mentioned upper processing position, a hydrophobization gas is supplied from the central supply port 42 toward the central portion of the surface of the wafer W as shown in Fig. 12. In addition, exhaust of the processing space S is performed via the upper peripheral exhaust port 121 and via the side exhaust port 122. As a result, the hydrophobizing gas from the central supply port 42 flows along the surface of the wafer W from the center to the outside of the wafer W. As a result, a hydrophobic film is formed on the entire surface of the wafer W.

[0081] Furthermore, an inert gas is supplied from the second supply port 91 toward the center of the back surface of the wafer W. This makes it possible to prevent the hydrophobization gas supplied to the front surface of the wafer W from flowing around to the back surface of the wafer W. It should be noted that no hydrophobizing gas is supplied from the second supply port 91 , and no gas is supplied from the peripheral supply port 43 .

[0082] At this time, exhaust through the upper peripheral exhaust port 121 and exhaust through the side exhaust port 122 are performed, for example, so that the gas containing the hydrophobization gas does not leak out of the processing vessel C and the atmosphere outside the processing vessel C does not flow into the processing space S. Specifically, control is performed so as to satisfy the above-mentioned formula (b) and the following formula (g). L1+L22 <L11+L12 …(g)

[0083] For example, when a predetermined time has elapsed since the start of the supply of the hydrophobization gas, the hydrophobization gas supplying step ends.

[0084] Thereafter, the supply of the hydrophobizing gas from the central supply port 42 toward the central portion of the front surface of the wafer W and the supply of the inert gas from the second supply port 91 toward the central portion of the back surface of the wafer W are stopped. At the same time, the lift pins 24 are lowered, and the wafer W is placed on the heating plate 20, as in Fig. 5, that is, the wafer W is transferred from the lift pins 24 to the gap pins 23. As a result, the wafer W is heated, and the hydrophobic film formed on the front surface of the wafer W is heat-treated.

[0085] For example, when a predetermined time has elapsed since the wafer W was placed on the heating plate 20, this heat treatment process is completed.

[0086] In this modification, the wafer W is at a low temperature when the hydrophobization gas is supplied to the front surface, so that the amount of constituent molecules of the hydrophobization film physically adsorbed to the wafer front surface is greater than in the processing sequence example 4. Furthermore, the wafer W is closer to the central supply port 42 when the hydrophobization gas is supplied to the front surface, so that the hydrophobization gas is sprayed more strongly onto the wafer W, so that the contact angle of the hydrophobization film on the front surface of the wafer W can be increased. Furthermore, since an inert gas is supplied to the rear surface when the hydrophobization gas is supplied to the front surface, the hydrophobization gas can be more reliably prevented from wrapping around the rear surface than in the processing sequence example 4.

[0087] <Processing sequence example 5> FIG. 13 is a flowchart showing main steps of the processing sequence example 5. The process sequence example 5 differs from the process sequence example 1 and the like in that only the back surface of a wafer W is to be subjected to the hydrophobic treatment.

[0088] 13, in the processing sequence example 5, step S1 is followed by steps S12 and S13, that is, supply of a hydrophobizing gas to the rear surface of the wafer W and heat treatment of the rear surface of the wafer W. Specifically, after step S1, supply of a hydrophobizing gas to the rear surface of the wafer W and heat treatment of the rear surface of the wafer W are performed in this order. Then, steps S4 and S5 are performed.

[0089] <Modification 2 of Processing Sequence Example 4> FIG. 14 is a diagram for explaining a second modification of the fourth example of the processing sequence. In the above-described processing sequence example 4 and its modification example 1, when only the front surface of the wafer W is hydrophobized, the entire front surface is hydrophobized, i.e., a hydrophobic film is formed on the entire front surface. Alternatively, when only the front surface of the wafer W is hydrophobized, only the outer periphery of the front surface may be hydrophobized, i.e., a hydrophobic film may be formed only on the outer periphery of the front surface. 14, in a state in which the wafer W supported by the lift pins 24 is moved to the above-mentioned upper processing position, a hydrophobization gas is supplied from the peripheral supply port 43 toward the peripheral portion of the front surface of the wafer W. In addition, exhaust of the processing space S is performed via the upper peripheral exhaust port 121 and the side exhaust port 122. As a result, the hydrophobizing gas from the peripheral supply port 43 flows along the surface of the wafer W toward the outside of the wafer W. As a result, a hydrophobic film is formed on the outer periphery of the surface of the wafer W (including the bevel portion).

[0090] Furthermore, an inert gas is supplied from the central supply port 42 toward the central portion of the surface of the wafer W. Due to this supply of inert gas and the above-mentioned exhaust, the inert gas flows from the center of the wafer W toward the outside along the surface of the wafer W, so that it is possible to suppress adhesion of the hydrophobizing gas to the inside of the outer periphery of the surface. Furthermore, an inert gas is supplied from the second supply port 91 toward the center of the back surface of the wafer W. Due to this supply of inert gas and the above-mentioned exhaust, the inert gas flows from the center of the wafer W toward the outside along the back surface of the wafer W, so that the hydrophobization gas supplied to the front surface of the wafer W can be prevented from flowing around to the back surface of the wafer W.

[0091] For example, when a predetermined time has elapsed since the start of the supply of the hydrophobization gas, the hydrophobization gas supplying step ends.

[0092] Thereafter, the supply of the hydrophobizing gas from the peripheral supply port 43 toward the peripheral portion of the front surface of the wafer W, the supply of the inert gas from the central supply port 42 toward the central portion of the front surface of the wafer W, and the supply of the inert gas from the second supply port 91 toward the central portion of the back surface of the wafer W are stopped. At the same time, the lift pins 24 are lowered, and the wafer W is placed on the heating plate 20 as in Fig. 5, that is, transferred from the lift pins 24 to the gap pins 23. As a result, the wafer W is heated, and the hydrophobic film formed on the peripheral portion of the front surface of the wafer W is heat-treated.

[0093] For example, when a predetermined time has elapsed since the wafer W was placed on the heating plate 20, this heat treatment process is completed.

[0094] In this modified example, by subjecting only the outer periphery of the front surface of the wafer W to hydrophobic treatment, even if water is present on the stage on which the wafer W is placed in an immersion exposure apparatus, the water can be prevented from seeping around to the back surface of the wafer W and causing defects.

[0095] <Modification of Processing Sequence Example 1> FIG. 15 is a diagram for explaining a modification of the first example of the processing sequence. In the above-described processing sequence example 1, when both the front and back surfaces of the wafer W are hydrophobized, the entire front surface is hydrophobized, i.e., a hydrophobic film is formed on the entire surface. Alternatively, when both the front and back surfaces of the wafer W are hydrophobized, only the outer periphery of the front surface may be hydrophobized, i.e., a hydrophobic film may be formed only on the outer periphery of the front surface. 15, the hydrophobization gas is supplied from the peripheral supply port 43 toward the peripheral portion of the front surface of the wafer W, and the hydrophobization gas is supplied from the second supply port 91 toward the central portion of the back surface of the wafer W. In addition, the processing space S is exhausted through the upper peripheral exhaust port 121 and the side exhaust port 122. As a result, the hydrophobizing gas from the peripheral supply port 43 flows along the front surface of the wafer W toward the outside of the wafer W, and the hydrophobizing gas from the second supply port 91 flows along the rear surface of the wafer W from the center of the wafer W toward the outside. As a result, a hydrophobic film is formed on the outer periphery of the front surface of the wafer W, and a hydrophobic film is formed on the entire rear surface of the wafer W.

[0096] Furthermore, an inert gas is supplied from the central supply port 42 toward the central portion of the surface of the wafer W. Due to this supply of inert gas and the above-mentioned exhaust, the inert gas flows from the center of the wafer W toward the outside along the surface of the wafer W, so that it is possible to suppress adhesion of the hydrophobizing gas to the inside of the outer periphery of the surface.

[0097] For example, when a predetermined time has elapsed since the start of the supply of the hydrophobization gas, the hydrophobization gas supplying step ends.

[0098] Thereafter, the supply of hydrophobization gas from the peripheral supply port 43 toward the outer peripheral portion of the front surface of the wafer W, the supply of hydrophobization gas from the second supply port 91 toward the central portion of the back surface of the wafer W, and the supply of inert gas from the central supply port 42 toward the central portion of the front surface of the wafer W are stopped. At the same time, the lift pins 24 are lowered, and the wafer W is placed on the heating plate 20 as in Fig. 5, that is, transferred from the lift pins 24 to the gap pins 23. As a result, the wafer W is heated, and the hydrophobic film formed on the outer peripheral portion of the front surface and the entire back surface of the wafer W is heat-treated.

[0099] For example, when a predetermined time has elapsed since the wafer W was placed on the heating plate 20, this heat treatment process is completed.

[0100] In this modified example, as in modified example 2 of processing sequence example 4, even if water is present on the stage on which the wafer W of an immersion exposure apparatus is placed, the water can be prevented from leaking onto the back surface of the wafer W and causing defects.

[0101] In addition, after the hydrophobization gas is supplied to the rear surface of the wafer W, the hydrophobization gas may be supplied to the outer peripheral portion of the front surface of the wafer W. In this case, the height of the wafer W when the hydrophobization gas is supplied to the outer peripheral portion of the front surface of the wafer W may be made higher than the height of the wafer W when the hydrophobization gas is supplied to the rear surface of the wafer W, and may be brought closer to the outer peripheral supply port 43. This narrows the range in which the hydrophobization gas supplied from the outer peripheral supply port 43 diffuses before reaching the outer peripheral portion of the front surface of the wafer W, and the portions of the front surface of the wafer W that are well hit by the hydrophobization gas and those that are not well hit by the hydrophobization gas become clearer. Therefore, the range in which the hydrophobization film is formed on the outer peripheral portion of the front surface of the wafer W can be controlled with higher accuracy.

[0102] <Further Modification of Processing Sequence Example 1> In the above example, during the heat treatment of the front and back surfaces of the wafer in step S3, the supply of the hydrophobization gas toward the center of the front surface is stopped. Instead, the supply of the hydrophobization gas toward the center of the front surface may be continued. This can further promote the hydrophobization of the front surface side of the wafer W. In addition, in the above example, during the heat treatment of the front and back surfaces of the wafer in step S3, the supply of hydrophobization gas toward the center of the back surface is also stopped. Instead of this, the supply of hydrophobization gas toward the center of the back surface may be performed at a low flow rate such that the wafer W does not float from the heating plate 20. This can further promote the hydrophobization of the back surface of the wafer W.

[0103] <Main Effects of This Embodiment> As described above, according to this embodiment, both the front and back surfaces of the wafer W can be subjected to hydrophobic treatment. Furthermore, according to the hydrophobization processing apparatus 1 and hydrophobization method of this embodiment, which are capable of hydrophobizing both the front and back surfaces of a wafer W, it is possible to process not only wafers W whose both front and back surfaces are to be hydrophobized, but also wafers W whose only the front surface or only the back surface is to be hydrophobized. Furthermore, according to this embodiment, only the outer periphery of the surface of the wafer W can be subjected to the hydrophobic treatment.

[0104] <Other Modifications> When the hydrophobization gas is supplied to the surface of the wafer W, the hydrophobization gas may be supplied from the central supply port 42 and the inert gas may be supplied from the peripheral supply port 43. This allows a hydrophobic film to be formed on the surface of the wafer W only in the area excluding the peripheral portion.

[0105] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. From such an arbitrary combination, the actions and effects of each of the components in the combination can be obtained as a matter of course, and other actions and effects that are obvious to a person skilled in the art from the description of this specification can be obtained.

[0106] In addition, the effects described in this specification are merely explanatory or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to a person skilled in the art from the description of this specification in addition to or in place of the above effects.

[0107] Note that the following configuration examples also fall within the technical scope of the present disclosure. (1) A hydrophobization treatment apparatus for hydrophobizing a substrate, comprising: a processing vessel that accommodates the substrate and defines a processing space; a first supply port that supplies a first gas to the substrate from above the substrate in the processing chamber; a second supply port that supplies a second gas to the substrate from a position below the substrate in the processing chamber facing a central region of the substrate, a hydrophobization gas can be supplied as the first gas from the first supply port and as the second gas from the second supply port. (2) the first supply port has a central supply port formed at a position opposite to the second supply port across the substrate in the processing vessel, The hydrophobization treatment apparatus according to (1), wherein for the substrate having both the front and back surfaces to be hydrophobized, the hydrophobization gas is supplied as the first gas from the central supply port during the hydrophobization treatment of the front surface. (3) The hydrophobization treatment apparatus according to (2) above, wherein the hydrophobization gas is simultaneously supplied to the front surface and the back surface of the substrate, both of which are to be hydrophobized. (4) The hydrophobization treatment device according to (2) above, in which the hydrophobization gas is sequentially supplied to the front surface and the back surface of the substrate, both of which are to be hydrophobized. (5) the first supply port has a central supply port formed at a position opposite to the second supply port across the substrate in the processing vessel, For the substrate in which only the surface is to be hydrophobized, the hydrophobization gas is supplied as the first gas from the central supply port, and an inert gas is supplied as the second gas from the second supply port during hydrophobization of the surface. (6) The processing chamber further includes an upper peripheral exhaust port that is provided above and outside the substrate in the processing chamber and opens into the processing space; The hydrophobization treatment device according to any one of (1) to (5), wherein when the hydrophobization gas is supplied into the treatment container, the inside of the treatment container is exhausted from the upper peripheral exhaust port. (7) The processing vessel is configured so that the inside thereof can be evacuated from an exhaust position outside the substrate, The first supply port is a central supply port formed at a position opposite to the second supply port across the substrate in the processing chamber; a peripheral supply port formed at a position between the central supply port and the outer exhaust position, The hydrophobization treatment apparatus described in (1) above, wherein when hydrophobizing only the outer peripheral portion of the surface of the substrate in the treatment container, an inert gas is supplied as the first gas from the central supply port, and the hydrophobization gas is supplied as the first gas from the outer peripheral supply port. (8) A hydrophobization method for hydrophobizing a substrate, comprising the steps of: A hydrophobization processing method comprising the steps of selectively supplying a hydrophobization gas from at least one of a first supply port provided above the substrate in a processing vessel that forms a processing space and a second supply port provided below the substrate in the processing vessel at a position opposite to a central region of the substrate. (9) The first supply port has a central supply port formed at a position opposite to the second supply port across the substrate in the processing vessel, The hydrophobization method described in (8), wherein in the step of selectively supplying the hydrophobization gas, for a substrate having both its front and back surfaces to be hydrophobized, the hydrophobization gas is supplied to the front surface from the central supply port. (10) The hydrophobization method according to (9), wherein in the selective supplying of the hydrophobization gas, for a substrate having both the front surface and the back surface to be hydrophobized, the hydrophobization gas is supplied simultaneously to the front surface and the back surface. (11) The hydrophobization method described in (9), wherein in the step of selectively supplying the hydrophobization gas, for a substrate having both the front surface and the back surface to be hydrophobized, the hydrophobization gas is sequentially supplied to the front surface and then to the back surface. (12) The first supply port has a central supply port formed at a position opposite to the second supply port across the substrate in the processing vessel, The hydrophobization method described in (8), wherein in the step of selectively supplying the hydrophobization gas, for a substrate having only its surface to be hydrophobized, the hydrophobization gas is supplied from the central supply port and an inert gas is supplied from the second supply port. (13) In the step of selectively supplying the hydrophobization gas, the inside of the processing vessel is exhausted from an upper peripheral exhaust port; The hydrophobization treatment method according to any one of (8) to (12), wherein the upper peripheral exhaust port is provided above and outside the substrate in the treatment container and opens into the treatment space. (14) The processing vessel is configured so that the inside thereof can be evacuated from an exhaust position that is a position outside the substrate, The first supply port is a central supply port formed at a position opposite to the second supply port across the substrate in the processing chamber; a peripheral supply port formed at a position between the central supply port and the outer exhaust position, The hydrophobization method described in (8), wherein in the step of selectively supplying the hydrophobization gas, for a substrate in which only the outer periphery of the surface of the substrate is to be hydrophobized, an active gas is supplied from the central supply port and the hydrophobization gas is supplied from the outer periphery supply port. (15) A readable computer storage medium storing a program that runs on a computer of a control unit that controls a hydrophobization treatment device so as to cause the hydrophobization treatment device to execute a hydrophobization method for hydrophobizing a substrate, the program comprising: The hydrophobization treatment method includes a step of selectively supplying a hydrophobization gas from at least one of a first supply port provided above the substrate in a treatment vessel that forms a treatment space and a second supply port provided below the substrate in the treatment vessel at a position opposite to a central region of the substrate. [Explanation of symbols]

[0108] 1 Hydrophobization treatment device 41 1st supply port 91 2nd supply port C Processing vessel W wafer

Claims

1. A hydrophobization treatment apparatus for hydrophobizing a substrate, comprising: a processing vessel that accommodates the substrate and defines a processing space; a first supply port that supplies a first gas to the substrate from above the substrate in the processing chamber; a second supply port that supplies a second gas to the substrate from a position below the substrate in the processing chamber facing a central region of the substrate, The hydrophobization treatment device is configured to be able to supply a hydrophobization gas as the first gas from the first supply port and the second gas from the second supply port.

2. the first supply port has a central supply port formed at a position opposite to the second supply port across the substrate in the processing chamber, The hydrophobization treatment apparatus according to claim 1 , wherein for the substrate having both a front surface and a back surface to be hydrophobized, the hydrophobization gas is supplied as the first gas from the central supply port during the hydrophobization treatment of the front surface.

3. The hydrophobization treatment apparatus according to claim 2 , wherein the hydrophobization gas is supplied simultaneously to the front surface and the back surface of the substrate, both of which are to be hydrophobized.

4. The hydrophobization treatment apparatus according to claim 2 , wherein the hydrophobization gas is supplied to the front surface and then to the rear surface of the substrate, both of which are to be hydrophobized.

5. the first supply port has a central supply port formed at a position opposite to the second supply port across the substrate in the processing chamber, 2. The hydrophobization treatment apparatus according to claim 1, wherein, for the substrate having only the surface to be hydrophobized, during hydrophobization of the surface, the hydrophobization gas is supplied as the first gas from the central supply port, and an inert gas is supplied as the second gas from the second supply port.

6. an upper peripheral exhaust port provided above and outside the substrate in the processing chamber and opening into the processing space; 6. The hydrophobization treatment apparatus according to claim 1, wherein the inside of the treatment vessel is exhausted from the upper outer peripheral exhaust port when the hydrophobization gas is supplied into the treatment vessel.

7. the processing vessel is configured so that its interior can be evacuated from an exhaust position outside the substrate; The first supply port is a central supply port formed at a position opposite to the second supply port with the substrate sandwiched therebetween in the processing chamber; a peripheral supply port formed at a position between the central supply port and the outer exhaust position, 2. The hydrophobization treatment apparatus according to claim 1, wherein, when hydrophobizing only the outer periphery of the surface of the substrate in the treatment vessel, an inert gas is supplied as the first gas from the central supply port, and the hydrophobization gas is supplied as the first gas from the outer periphery supply port.

8. A hydrophobization method for hydrophobizing a substrate, comprising the steps of: A hydrophobization processing method comprising the steps of selectively supplying a hydrophobization gas from at least one of a first supply port provided above the substrate in a processing vessel that forms a processing space and a second supply port provided below the substrate in the processing vessel at a position opposite to a central region of the substrate.

9. the first supply port has a central supply port formed at a position opposite to the second supply port across the substrate in the processing chamber, 9. The hydrophobization method according to claim 8, wherein in the step of selectively supplying the hydrophobization gas, for a substrate having both a front surface and a back surface to be hydrophobized, the hydrophobization gas is supplied to the front surface from the central supply port.

10. The hydrophobization method according to claim 9 , wherein in the selective supply of the hydrophobization gas, for a substrate having both the front surface and the back surface to be hydrophobized, the hydrophobization gas is supplied simultaneously to the front surface and the back surface.

11. The hydrophobization processing method according to claim 9, wherein in the process of selectively supplying the hydrophobization gas, for a substrate having both the front surface and the back surface to be hydrophobized, the hydrophobization gas is sequentially supplied to the front surface and then to the back surface.

12. the first supply port has a central supply port formed at a position opposite to the second supply port across the substrate in the processing chamber, 9. The hydrophobization method according to claim 8, wherein in the selective supply of the hydrophobization gas, for a substrate having only its surface to be hydrophobized, the hydrophobization gas is supplied from the central supply port and an inert gas is supplied from the second supply port.

13. In the step of selectively supplying the hydrophobization gas, the inside of the processing vessel is exhausted from an upper outer peripheral exhaust port; 13. The hydrophobization method according to claim 8, wherein the upper peripheral exhaust port is provided above and outside the substrate in the processing vessel and opens into the processing space.

14. the processing vessel is configured so that its interior can be evacuated from an exhaust position that is a position outside the substrate; The first supply port is a central supply port formed at a position opposite to the second supply port with the substrate sandwiched therebetween in the processing chamber; a peripheral supply port formed at a position between the central supply port and the outer exhaust position, 9. The hydrophobization method according to claim 8, wherein in the selective supply of the hydrophobization gas, for a substrate in which only the outer periphery of the surface of the substrate is to be hydrophobized, an active gas is supplied from the central supply port and the hydrophobization gas is supplied from the outer periphery supply port.

15. A readable computer storage medium storing a program that operates on a computer of a control unit that controls a hydrophobization treatment device so as to cause the hydrophobization treatment device to execute a hydrophobization treatment method for hydrophobizing a substrate, the program comprising: The hydrophobization treatment method includes a step of selectively supplying a hydrophobization gas from at least one of a first supply port provided above the substrate in a treatment vessel that forms a treatment space and a second supply port provided below the substrate in the treatment vessel at a position opposite to a central region of the substrate.

Images