Power module and method for producing the same

Abstract

To provide a power module and a method for producing the same.SOLUTION: There is provided a power module (12) including a first circuit carrier (14) having an electrically insulating layer (16). In the power module (12), at least one first conductor structure (18), at least one second conductor structure (20a, 20b), and at least one third conductor structure (22) are formed on the electrically insulating layer (16). A layout of the first circuit carrier (14) is made to be mirror-symmetrical to a central longitudinal axis (24). A second circuit carrier (26) is made as a rectangular, particularly flexible circuit board (52) arranged symmetrically to the central longitudinal axis (24). Contact regions (54, 56) of the flexible circuit board (52) are connected to first and second semiconductor switches (28, 30) (HS1-HS4, LS1-LS4) via first bonding wires (60).SELECTED DRAWING: Figure 2.3

Description

[Technical field]

[0001] The present invention relates to a power module comprising a first circuit carrier having an electrical insulating layer on which at least one first conductor structure is formed. Furthermore, the present invention relates to a method for manufacturing a power module and a power module bridge comprising a plurality of power modules. [Background technology]

[0002] In the prior art, the power modules, which are for example attached to the power module bridge, are molded as an add-on. During molding, the power modules are embedded in a robust protective housing, for example made of plastic (mold compound). The mold compound serves to encapsulate and protect the inside of the power modules. However, these encapsulations of the power modules in the mold compound are not particularly resistant to cracks.

[0003] From DE112017004390T5 a power module is known having the following features: an insulating substrate having a front side on which power semiconductor elements are fixed, a base plate connected to a rear side of the insulating substrate, a housing fixed to the base plate and surrounding the insulating substrate, a cover fixed to the housing and forming a sealing area, and a silicone gel serving as a filling element filling the entire sealing area and having an internal stress acting as a compressive stress.

[0004] From DE102014219998B4 a power module is known, inter alia, for supplying phase currents for an electric motor. The power module comprises a circuit carrier having a surface, at least two first contact surfaces on the surface and at least two first power transistors, each having one bottom contact surface. Each first power transistor of the at least two first power transistors is arranged directly on a respective one of the first contact surfaces and is directly conductively connected to the respective first contact surface via its bottom contact surface. The power module further comprises second contact surfaces on the surface and at least two second power transistors, each having one bottom contact surface. The at least two second power transistors are arranged directly on the second contact surfaces and are directly conductively connected to the second contact surface via their respective bottom contact surfaces. The power module further comprises at least two third contact surfaces on the surface, the at least two second power transistors each having one further contact surface on a side opposite to the surface of the circuit carrier, and each one of the at least two second power transistors is conductively connected to a respective one of the at least two third contact surfaces via its further contact surface. The at least two first contact surfaces and the at least two third contact surfaces are arranged alternately in the longitudinal direction of the power module, the second contact surface is arranged next to the at least two first contact surfaces and the at least two third contact surfaces, the second contact surface has at least two contact areas, each one of the at least two contact areas being located next to a respective one of the at least two first power transistors. The at least two first power transistors each have a respective further contact surface on a side opposite to the surface of the circuit carrier, and each first power transistor of the at least two first power transistors is conductively connected via its further contact surface to a respective one of the at least two contact areas of a second contact surface located adjacent to it.Here, the at least two contact regions of the second contact surface and the at least two second power transistors are arranged alternately in the longitudinal direction.

[0005] From EP 2 418 925 B1, an electrical contact is known between a flex foil with at least one conductor track and at least one electrical contact of a sensor or control device, where an end section of the flex foil is electrically contacted at a contact location by heat input, the end section of the flex foil at the contact location being abutted against a protruding electrical contact, the end section of the flex foil being formed as a corrugated section, in particular as a deflected section. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] DE112017004390T5 [Patent Document 2] DE102014219998B4 [Patent Document 3] EP2418925B1 Summary of the Invention

[0007] According to the invention, a power module is provided with a first circuit carrier having an electrical insulating layer, on which at least one first conductor structure is formed which can be contacted with a first supply terminal via at least one external contact area, at least one second conductor structure which can be contacted with a second supply terminal via at least one external contact area, and at least one third conductor structure which can be contacted with a load terminal via at least one external contact area, at least one first semiconductor switch is electrically connected between the at least one first conductor structure and the at least one third conductor structure, and at least one second semiconductor switch is electrically connected between the at least one third conductor structure and the at least one second A power module is proposed in which at least one second semiconductor switch is electrically connected between the conductor structure, and at least one second circuit carrier is arranged spatially parallel above the first circuit carrier and comprises at least one internal contact area, where control terminals of the first and second semiconductor switches are contacted, and at least one external contact area, where contact elements that can be contacted with control lines of an external contact device are arranged, the layout of the first circuit carrier is made mirror symmetrically with respect to the central longitudinal axis, and the second circuit carrier is made as a rectangular, in particular flexible, circuit board arranged symmetrically with respect to the central longitudinal axis. The first semiconductor switch is connected to the first conductor structure via a first bond wire, and the second semiconductor switch is connected to the third conductor structure via a first bond wire. The contact areas of the flexible circuit board are further connected to the first and second semiconductor switches via second bond wires.

[0008] The solution proposed according to the invention allows the use of electronic circuits having electrical connections, especially copper bonds, and therefore allows the repurposing of existing manufacturing lines, without the need for new or further development and redesign of processes.

[0009] Advantageously, in the power module according to the invention, the first and / or the second bond wire are made as copper bonds. Alternatively, in the power module proposed according to the invention, the first and / or the second bond wire may be made as aluminum bonds.

[0010] In the power module proposed according to the invention, the first and the second semiconductor switch are made as transistors, in particular as MOSFETs (Field Effect Transistors).

[0011] The power module proposed according to the invention is further characterized in that second bond wires extend as aluminum bonds between the control terminals of the first and second semiconductor switches and the contact areas of the flexible circuit board.

[0012] In the power module proposed according to the invention, the first bond wires are made as copper bonds between the first and second semiconductor switches and the contact areas of the first and third conductor structures.

[0013] The invention further relates to a power module bridge with a plurality of power modules, which are arranged on a cooling surface and combined to form a power module bridge, each one of the power modules being assigned a separate cooling area.

[0014] A development of the power module bridge proposed according to the invention comprises power modules each surrounded by a gel frame which is filled with gel, the gel having a favorable viscosity which on the one hand compensates for deformations and on the other hand completely protects the power modules from the environment.

[0015] The present invention further relates to a method for manufacturing a power module, in which a first circuit carrier is made mirror-symmetrical with respect to a central longitudinal axis, a second circuit carrier with at least one internal contact area and at least one external contact area, at least one first semiconductor switch and at least one second semiconductor switch are provided, the first semiconductor switch is electrically connected between a first conductor structure and at least one second conductor structure of the first circuit carrier, the at least one second semiconductor switch is electrically connected between at least one third conductor structure of the first circuit carrier and at least one first or second conductor structure, and the at least one second circuit carrier is arranged spatially parallel and symmetrical with respect to the central longitudinal axis above the first circuit carrier, the first semiconductor switch being connected to the first conductor structure via a first bond wire and the second semiconductor switch being connected to the third conductor structure via a first bond wire. The contact areas of the flexible circuit board are further connected to the first and second semiconductor switches via second bond wires.

[0016] Advantageously, the method proposed according to the invention allows already mounted and contacted power modules to be combined to form a power module bridge.

[0017] In a development of the method proposed according to the invention, each power module of a power module bridge is arranged in a cooling area of ​​a cooling surface.

[0018] In an advantageous development of the method proposed according to the invention, the power module is surrounded by a gel frame into which the gel is injected. Advantages of the Invention The power module proposed according to the invention or the method for its manufacture allows electrical connections to be produced, in particular as wire connections in the power module. Advantageously, the electrical connections can be designed as copper or aluminum wires, for example, so that no new process concepts are required and already proven production lines can be utilized. The solution proposed according to the invention is characterized in particular by its robustness and versatility. Electrical connections in the form of copper or aluminum bonds can be made in alternating sequence with minimal space, the individual electrical connections comprising planar areas that can be particularly easily connected in a one-piece manner to the conductor structures and arc-shaped areas that can bridge their insulating channels. The bond wires are further characterized by being very flexibly guideable and can be adapted to the very different geometries of the power modules, which are arranged in a stack, in particular.

[0019] According to the solution proposed according to the invention, individual power modules can be combined next to each other on the cooling surface, so that a power module bridge is obtained which includes several power modules proposed according to the invention. The cooling surface, which can accommodate, for example, three power modules arranged next to each other, is divided in such a way that each one of the power modules is assigned an individual cooling area. According to the solution proposed according to the invention, it is further possible to provide, for example, a gel frame which encloses three power modules according to the invention which are combined to form a power module bridge and which is open on one side. In order to preserve or protect the components of the power module proposed according to the invention which are interconnected here as a power module bridge, the gel frame can be filled with gel from its open side, so that the components of the power module are reliably protected against environmental, thermal and further external influences. Due to the viscosity of the gel, thermal expansion or deformation can also be compensated without problems, so that crack formation and even the ingress of moisture cannot occur.

[0020] Advantageously, a symmetrical connection (see section X (T-plus path) and section Y (phase path)) is furthermore arranged, which is electrically very advantageous. This allows all semiconductor elements or chips to be loaded evenly. In the event of a short circuit, the energy can also be absorbed evenly by the semiconductor elements. This allows, for example, when used in an electrically powered vehicle, for this purpose to be safely disconnected from the current path and in this way further components in the electrically powered vehicle can be very well protected.

[0021] The invention will now be described in more detail with reference to the drawings. [Brief description of the drawings]

[0022] [Figure 1.1] 1A-1D show different stages in the construction of a power module according to the invention incorporating semiconductor switches on different conductor structures and a flexible circuit board. [Figure 1.2] 1A-1D show different stages in the construction of a power module according to the invention incorporating semiconductor switches on different conductor structures and a flexible circuit board. [Figure 1.3] 1A-1D show different stages in the construction of a power module according to the invention incorporating semiconductor switches on different conductor structures and a flexible circuit board. [Figure 2.1] A diagram showing a power module according to FIG. 1.3 having a first bond wire extending between a semiconductor switch and a portion of the conductor structure. [Figure 2.2] FIG. 2 is an enlarged view of electrical connections in the form of bond wires made as copper bonds and arranged in an alternating sequence. [Figure 2.3] 13 illustrates the formation of a second bond wire between the semiconductor switch, starting from the control terminal of the semiconductor switch and the contact area of ​​the flexible circuit board. [Diagram 3] FIG. 2 is a plan view of a cooling surface divided into cooling regions. [Figure 4] FIG. 2 shows the arrangement of power modules mounted in full contact on corresponding cooling areas of a cooling surface. [Diagram 5] FIG. 2 shows the arrangement of a gel frame around three power modules according to the invention forming a power module bridge. [Figure 6] FIG. 6 shows the arrangement of busbars T-minus and phases in the arrangement according to FIG. 5. [Figure 7] FIG. 13 shows the arrangement of a busbar T plus with insulators above the gel frame of a power module bridge containing three power modules according to the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0023] In the following description of embodiments of the invention, identical or similar elements are designated with the same reference numerals, and in individual cases repeated description of these elements is omitted. The figures only diagrammatically represent the subject matter of the invention.

[0024] As can be seen in the sequence of figures 1.1 to 1.3, a power module 12 according to the invention, arranged in an XY-plane 10, comprises a first circuit carrier 14. The first circuit carrier 14 is provided with an electrical insulating layer 16. On the electrical insulating layer 16, at least one first conductor structure 18 is formed, which can be contacted with a first supply terminal via at least one external contact area 18.2, at least one second conductor structure 20a, 20b is formed, which can be contacted with a second supply terminal via at least one external contact area 20a.2, 20b.2, and at least one third conductor structure 22 is formed, which can be contacted with a load terminal via at least one external contact area 22.2.

[0025] As can be seen in the illustration according to Fig. 1.1, the individual conductor structures 18, 20a, 20b, 22 are separated from one another by channels, so that there are no conductive connections 58 between them. The power module 12 or the first circuit carrier 14 according to Fig. 1.1 is configured symmetrically with respect to its central longitudinal axis 24.

[0026] As can be seen in FIG. 1.2, at least one first semiconductor switch 28 (HS1-HS4) is arranged on the second conductor structure 20a, 20b. At least one second semiconductor switch 30 (LS1-LS4) is further accommodated in the lower part of the first conductor structure 18. The semiconductor switches 28, 30 (HS1-HS4, LS1-LS4) are semiconductor elements 42, such as, for example, MOSFETs or other transistors. They each have a control terminal 34, and the semiconductor switches 28, 30 (HS1-HS4, LS1-LS4) may be sintered to the respective conductor structure 20a, 20b, 18 or are otherwise fixed thereto in an integrally joined manner.

[0027] In the illustration according to FIG. 1.2, two sections X, Y are furthermore shown, where section X corresponds to a symmetrical current carrying connection on the T-plus path and section Y corresponds to a symmetrical connection on the phase path. The illustrated symmetrical connection may for example correspond to a symmetrical current path resulting in an even load on the semiconductor element 42 or the semiconductor switch 28, 30. The symmetrical current sections X, Y illustrated in FIG. 1.2 allow the energy to be evenly absorbed by the semiconductor element 42 in the event of a short circuit, which, if these are housed in the electric drive vehicle, for example in its power electronics, provides a safe separation from the current path and effectively protects other components in the vehicle.

[0028] As can be seen in Fig. 1.3, a second circuit carrier 26 in the form of a flexible circuit board 52 is provided on the mounted first circuit carrier 14 according to the representation in Fig. 1.2. The flexible circuit board 52 comprises at least one temperature sensor 50 (NTC) and a first strip-shaped contact area 54 and a second strip-shaped contact area 56 extending parallel thereto. The two contact areas 54, 56 are provided with contact pads 70 for connecting conductive connections 58 as will be described further below. The contact pads 70 are provided in pairs adjacent to each other on the first contact area 54 and the second contact area 56 of the flexible circuit board 52.

[0029] FIG. 2.1 shows a plan view of the mounted and partially contacted first circuit carrier 14 of the proposed power module 12 according to the invention.

[0030] Fig. 2.1 shows, starting from the state of the power module 12 according to Fig. 1.3, how the respective first semiconductor switches 28 (HS1 to HS4) and second semiconductor switches 30 (LS1 to LS4) are contacted. In the state shown in Fig. 2.1, the control terminals 34 of the semiconductor elements 42 formed as MOSFETs are still free and not contacted. However, the first semiconductor switches 28 (HS1 to HS4) and second semiconductor switches 30 (LS1 to LS4) are contacted to each other via first bond wires 60, preferably formed as copper bonds.

[0031] FIG. 2.1 shows how first bond wires 60 are connected to the outer contact areas 18.2 of the first conductor structure 18 as conductive connections 58 for the first semiconductor switches 28 (HS1-HS4).

[0032] The control terminals 34 located outside the first semiconductor switches 28 (HS1 to HS4) and the second semiconductor switches 30 (LS1 to LS4) are not yet in contact with each other and are placed opposite the respective contact pads 70 located above the first contact area 54 and the second contact area 56 of the flexible circuit board 52.

[0033] FIG. 2.2 shows an enlarged view of a portion of a partially contacted, populated first circuit carrier 14.

[0034] As can be seen from the enlarged view according to FIG. 2.2, the first bond wires 60 made as copper bonds are arranged next to each other in an alternating sequence 68. Each one of the electrical connections 58, here formed as first bond wires 60, preferably copper bonds, comprises, for example, a flat area 66 which is in contact with the external contact area 22.2 of the third conductor structure 22. On both sides extend arc-shaped areas 64 respectively from the flat area 66, which are in electrical contact with respective terminal pads of the semiconductor element 42, which is preferably formed as a MOSFET. The conductive connections 58 in the form of the first bond wires 60 as copper bonds extend with different arc widths relative to the arc-shaped areas 64.

[0035] On the other hand, as can be seen from Fig. 2.2, the control terminal 34, which was still free in Fig. 2.1, of the semiconductor element 42 formed as a MOSFET is contacted via a conductive connection 58 in the form of a second bond wire 62 having the nature of an aluminium bond to a contact pad 70 on the upper side of the second contact area 56 of the flexible circuit board 52. The second contact area 56 covers a part of the external contact area 22b.2.

[0036] Reference numeral 16 denotes an electrically insulating layer disposed on the top side of the first circuit carrier 14 .

[0037] As can be seen in Fig. 2.3, in this state the proposed power module 12 according to the present invention is fully mounted and fully contacted. Fig. 2.3 shows how all the control terminals 34 of the first and second semiconductor switches 28, 30 (HS1-HS4, LS1-LS4) are electrically connected to the contact pads 70 on the upper side of the first contact area 54 and the second contact area 56 of the flexible circuit board 52.

[0038] In this case, the conductive connection 58 is formed as a second bond wire 62, for example an aluminum bond. Instead of an aluminum bond, the second bond wire 62 could also be made of copper or another good conductive material. Similarly, according to the illustration in FIG. 2.3, the semiconductor element 42, for example a MOSFET, is conductively connected either to the external contact area 18.2 of the first conductor structure 18 or to the external contact area 22.2 of the third conductor structure 22 via a first bond wire 60, for example formed as a copper bond.

[0039] In Fig. 3 one can see a plan view of the plate-like base surface on which the cooling surface 72 is formed. According to the plan view in Fig. 3, the cooling surface 72 comprises a number of cooling zones, namely a first cooling zone 74, a second cooling zone 76 and a third cooling zone 78. The individual cooling zones 74, 76, 78 are dimensioned such that the area of ​​the cooling zones 74, 76, 78 corresponds to the base area of ​​the first circuit carrier 14 of the power module 12 proposed according to the invention.

[0040] 4 shows a cooling surface 72 on which a number of power modules 12 are mounted. In each one of the cooling areas 74, 76, 78, a first circuit carrier 14 of the power modules 12 according to the invention, here three, is provided. By means of the cooling areas 74, 76, 78, the power modules 12 are cooled via the first circuit carrier 14, whereby the thermal load occurring during operation is dissipated. As can be seen from the plan view according to FIG. 4, here all three power modules 12 provided on the cooling surface 72 in the assembly 80 correspond to the state of the power modules 12 described above, i.e. fully mounted and contacted as shown in FIG. 2.3. The flexible circuit board 52 assigned to each one of the power modules 12 and serving as the second circuit carrier 26 is still of flat design, i.e. extends in the XY-plane 10. The first and second contact areas 54, 56 of the flexible circuit board 52 on which the paired contact pads 70 are located are electrically contacted via a conductive connection 58 by a first bond wire 60 or a second bond wire 62, as shown in FIG. 2.3.

[0041] As can be seen in Fig. 5, in this variant the flexible circuit board 52 comprises a raised portion 82, i.e. the portion of the flexible circuit board 52 arranged adjacent to the first contact area 54 is subjected to a 90° deflection 84. The raised portion 82 therefore extends vertically, i.e. in the Z direction, above the XY-plane 10. As can be further seen in the illustration according to Fig. 5, the arrangement of three power modules 12 on the cooling surface 72, illustrated as an assembly 80 according to Fig. 4, is surrounded here by a rectangular-shaped gel frame 86. The gel frame 86 has a height 92 of a few millimeters and surrounds the entire power modules 12 arranged in the cooling areas 74, 76, 78 of the cooling surface 72. In the variant according to Fig. 5, the gel frame 86 has a first long side 88 and a short side 90 extending at right angles thereto. The gel frame 86 is open on one side, so that the power module 12 enclosed by the gel frame 86 can be injected with gel, for example by filling the gel frame 86 from above, and is thus protected from environmental influences. Naturally, the injection of the gel frame 86 is only carried out after the fully contacted mounted power module 12 has been placed in the gel frame 86.

[0042] Starting from the situation of a power module bridge 102 with three power modules 12 proposed according to the invention, which are arranged substantially in the XY-plane 10 and provided on the respective cooling areas 74, 76, 78 of their cooling surface 72 and surrounded by a gel frame 86, as can be seen from the illustrations according to Fig. 6, a jointed connection of the busbar 94 is made, in this case to the T-minus busbar 96 and to the phase 98. By means of the above-mentioned components, parts of the individual conductor structures 18, 20a, 20b, 22 are electrically connected. After the implementation of the jointed connection of the busbar 94, for example by welding, the T-plus busbar 100, which may possibly have an insulator, is electrically connected, for example to the external contact areas 20a.2, 20b.2, as shown in Fig. 7. The phase 98 is electrically connected to the third conductor structure 22, while, referring to the illustration according to Fig. 6, the T-minus busbar 96 is jointed to the first conductor structure 18.

[0043] In a method for manufacturing a power module 12 according to the invention, a first circuit carrier 14 symmetrical with respect to a central longitudinal axis 24, a second circuit carrier 26 having at least one inner contact area and at least one outer contact area, at least one first semiconductor switch 28 (HS1-HS4) and at least one second semiconductor switch 30 (LS1-LS4) are provided. The first semiconductor switch 28 (HS1-HS4) is electrically connected between at least one first conductor structure 18 of the first circuit carrier 14 and at least one second conductor structure 20a, 20b. The at least one second semiconductor switch 30 (LS1-LS4) is electrically connected between at least one third conductor structure 22 of the first circuit carrier 14 and at least one second conductor structure 20a, 20b. The at least one second circuit carrier 26 is arranged above the first circuit carrier 14 in a spatially parallel and symmetrical manner with respect to the central longitudinal axis 24. The first semiconductor switch 28 (HS1-HS4) is connected to the first conductor structure 18 via a first bond wire 60, the second semiconductor switch 30 (LS1-LS4) is connected to the third conductor structure 22 via a first bond wire 60, and the contact areas 54, 56 of the flexible circuit board 52 are further electrically connected to the first and second semiconductor switches 28, 30 (HS1-HS4, LS1-LS4) via a second bond wire 62.

[0044] The present invention is not limited to the exemplary embodiments and aspects highlighted herein, but rather is capable of numerous modifications within the scope of the practice of the person skilled in the art within the scope specified by the claims. [Explanation of symbols]

[0045] 12 Power Module 14 First Circuit Carrier 16 Electrical insulation layer 18 First conductor structure 18.2 External contact area 20a, 20b Second conductor structure 20a.2, 20b.2 External contact area 22 Third Conductor Structure 22.2 External contact area 24 Central Longitudinal Axis 26 Second Circuit Carrier 28 First semiconductor switch 30 Second semiconductor switch 34 Control terminal 42 Transistor 52 Circuit Board 54, 56 contact area 60 First bond wire 62 Second bond wire 72 Cooling surface 74, 76, 78 cooling area 86 Gel Frame 102 Power Module Bridge

Claims

1. A power module (12) comprising a first circuit carrier (14) having an electrical insulating layer (16), on which at least one first conductor structure (18) is formed, which is contactable with a first supply terminal via an external contact area (18.2), at least one second conductor structure (20a, 20b) which is contactable with a second supply terminal via at least one external contact area (20a.2, 20b.2), and at least one third conductor structure (22) which is contactable with a load terminal via at least one external contact area (22.2), at least one first semiconductor switch (28) (HS1-HS4) is electrically connected between the at least one first conductor structure (18) and the at least one third conductor structure (22), and at least one second semiconductor switch (28) (HS1-HS4) is electrically connected between the at least one third conductor structure (22) and the at least one second semiconductor switch (28). at least one second semiconductor switch (30) (LS1-LS4) is electrically connected between the conductor structures (20a, 20b) of said first and second semiconductor switches (28, 30) (HS1-HS4, LS1-LS4), at least one second circuit carrier (26) is arranged spatially parallel above said first circuit carrier (14) and comprises at least one internal contact area, with which control terminals (34) of said first and second semiconductor switches (28, 30) (HS1-HS4, LS1-LS4) are contacted, and at least one external contact area, with which contact elements that can come into contact with control lines of an external contact device are arranged, the layout of said first circuit carrier (14) is made mirror-symmetrical with respect to a central longitudinal axis (24) and said second circuit carrier (26) is made as a rectangular, in particular flexible, circuit board (52) that is arranged symmetrically with respect to said central longitudinal axis (24), contact areas (54, 56) of the flexible circuit board (52) are connected to the first and second semiconductor switches (28, 30) (HS1-HS4, LS1-LS4) via first bond wires (60), the first semiconductor switch (28) (HS1-HS4) is connected to the first conductor structure (18) via second bond wires (62), and the second semiconductor switch (30) (LS1-LS4) is connected to the third conductor structure (22) via second bond wires (62); A power module (12).

2. 2. The power module (12) according to claim 1, characterized in that the first and / or the second bond wires (60, 62) are made as copper bonds.

3. 2. The power module (12) according to claim 1, characterized in that the first and / or the second bond wires (60, 62) are made as aluminum bonds.

4. 4. The power module (12) according to claim 1, characterized in that the first semiconductor switches (28) (HS1 to HS4) and the second semiconductor switches (30) (LS1 to LS4) are made as transistors, in particular MOSFETs (42).

5. 5. The power module (12) according to claim 1, wherein the second bond wires (62) extend as aluminum bonds between the control terminals (34) of the first and second semiconductor switches (28, 30) (HS1-HS4, LS1-LS4) and the contact areas (54, 56) of the flexible circuit board (52).

6. 6. The power module (12) according to claim 1, characterized in that the first bond wires (60) are made as copper bonds between the first and second semiconductor switches (28, 30) (HS1-HS4, LS1-LS4) and the external contact areas (18.2, 22.2) of the first and third conductor structures (18, 22).

7. A power module bridge (102) comprising a plurality of power modules (12) according to any one of claims 1 to 6, characterized in that the plurality of power modules (12) are combined on a cooling surface (72) to form a power module bridge (102), and each one of the power modules (12) is assigned an individual cooling area (74, 76, 78).

8. 8. The power module bridge (102) of claim 7, wherein the power module (12) is surrounded by a gel frame (86) filled with gel.

9. A method for manufacturing a power module (12) made according to any one of claims 1 to 6, in which a first circuit carrier (14) is made mirror-symmetrical with respect to a central longitudinal axis (24), a second circuit carrier (26), in particular a flexible circuit board (52), with at least one internal contact area and at least one external contact area, at least one first semiconductor switch (28) (HS1-HS4) and at least one second semiconductor switch (30) (LS1-LS4) are provided, the first semiconductor switch (28) (HS1-HS4) is electrically connected between at least one first conductor structure (18) and at least one third conductor structure (22) of the first circuit carrier (14); at least one second semiconductor switch (30) (LS1-LS4) is electrically connected between the at least one third conductor structure (22) and the at least one second conductor structure (20a, 20b) of the first circuit carrier (14); The method, wherein the at least one second circuit carrier (26), fabricated as a flexible circuit board (52), is positioned spatially parallel and symmetrically with respect to a central longitudinal axis (24) above the first circuit carrier (14), the first semiconductor switches (28) (HS1-HS4) are connected to the first conductor structure (18) via first bond wires (60), and the second semiconductor switches (30) (LS1-LS4) are connected to the third conductor structure (22) via first bond wires (60); contact areas (54, 56) of the flexible circuit board (52) are connected to the first and second semiconductor switches (28, 30) (HS1-HS4, LS1-LS4) via second bond wires (62); A method comprising:

10. 10. The method of claim 9, wherein the mounted and contacted power modules (12) are combined to form a power module bridge (102).

11. 11. The method according to claim 9 or 10, characterized in that the power modules (12) are arranged in cooling areas (74, 76, 78) of a cooling surface (72).

12. 12. The method according to any one of claims 9 to 11, characterized in that the power module (12) is surrounded by a gel frame (86) into which gel is injected.

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