Light-emitting device

Abstract

To provide a display device excellent in display quality.SOLUTION: A display device including a plurality of display areas each having a different normal direction to each other is provided. A plurality of sub-pixels composing a pixel is arranged in different arrangement directions according to each display area.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One aspect of the present invention relates to an article, a method, or a manufacturing method. Process, machine, manufacture, or composition of matter In particular, one embodiment of the present invention relates to a light-emitting device, a display device, an electronic device, a lighting device, or The present invention relates to methods for making, using, and operating electroluminescent devices. Light emission using the electroluminescence (EL) phenomenon Devices, display devices, electronic devices, lighting devices, or methods for making, using, or operating them etc.

[0002] In this specification, a semiconductor device is a device that can function by utilizing semiconductor characteristics. This refers to the whole. Transistors and semiconductor circuits can be considered semiconductor devices. Display devices, light-emitting devices, electro-optical devices, and electronic equipment often include semiconductor devices. be. [Background technology]

[0003] In recent years, light-emitting devices and display devices are expected to be used for a variety of purposes, and diversification is required. There are.

[0004] For example, in light-emitting devices and display devices for use in portable devices, etc., the devices are required to be thin and lightweight. There are demands for the material to be applicable to curved surfaces, to be resistant to breakage, etc.

[0005] In addition, light-emitting elements that utilize the EL phenomenon (also referred to as EL elements) can be easily made thin and lightweight, and the input signal It has features such as high-speed response to signals and the ability to be driven by a low-voltage DC power supply. Applications to display devices are currently being considered.

[0006] For example, Patent Document 1 discloses a film substrate on which transistors and organic EL display devices are mounted. A flexible active matrix display device having an EL element is disclosed. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] JP 2003-174153 A Summary of the Invention [Problem to be solved by the invention]

[0008] In the display device 900 shown in FIG. 19(A), a display area 131 is a region 160 facing a viewer. 19B and 19C, the display area 131 has an area 170 that does not face the viewer. 19(C) is a cross-sectional view of a portion Q1-Q2 indicated by a dashed line in FIG. FIG. 19B) shows the region 170 in a bent state, and FIG. 19C shows the region 170 in a curved state. In FIG. 19(B) and FIG. 19(C), the bending state is shown. The direction of the normal near the center of the region 160 is shown as normal 168, and the direction of the normal near the center of the region 170 is shown as normal 169. The direction of the normal to the line 178 is shown as normal 178. Even if the normal direction near the center of the region 160 is different from the normal direction near the center of the region 170, It has become.

[0009] The display device 900 also includes a substrate 111 and a substrate 121. 19(D) shows a region 16. The region 16 has a light-emitting element and a coloring layer (not shown). 19(E) is an enlarged view of a portion 161 that is a part of the display area 131 in FIG. 1 is an enlarged view of a portion 171 that is part of the display area 131 in the area 170.

[0010] The display area 131 has a plurality of pixels arranged in a matrix. The three sub-pixels are arranged in a stripe pattern, and each sub-pixel is a red In FIG. 19(D), the pixels in the region 160 are designated as pixels 165. The subpixel that emits red light is shown as subpixel 165R, and the subpixel that emits green light is shown as subpixel 16 5G, and the subpixel that emits blue light is shown as subpixel 165B. The pixels in region 170 are designated as pixels 175, the red light emitting subpixels as subpixels 175R, The subpixel that emits green light is designated as subpixel 175G, and the subpixel that emits blue light is designated as subpixel 175B. It shows.

[0011] Next, a state in which the observer 910 visually recognizes the image displayed in the area 160 will be described. FIG. 20A shows the relationship between the observer 910 and the light 235 emitted from the pixel 165. 20A is a schematic cross-sectional view of a pixel 165. FIG.

[0012] The subpixel 165R includes a light-emitting element 125 and a color layer 266R. The subpixel 165B includes the light-emitting element 125 and the color layer 266G. 6B. The light 235 emitted from the light emitting element 125 is colored when it passes through the colored layer. can be.

[0013] For example, in the subpixel 165G, the light emitted from the light emitting element 125 of the subpixel 165G is The white light 235 is converted to green light 235 by the colored layer 266G and is projected to the observer 910. In addition, a part of the white light 235 emitted from the light emitting element 125 reaches the other sub-pixels. However, in the region 160, the light entering the color layer may be converted to an unintended color. Since the observer 910 and the display area 131 face each other, the light 235 converted into an unintended color is It is difficult for the observer 910 to recognize.

[0014] Next, a state in which the observer 910 visually recognizes the image displayed in the area 170 will be described. FIG. 20B shows the relationship between the observer 910 and the light 235 emitted from the pixel 175. 20B is a schematic cross-sectional view of a pixel 175.

[0015] The subpixel 175R includes a light-emitting element 125 and a color layer 266R. The subpixel 175B includes the light-emitting element 125 and the color layer 266G. 6B. The light 235 emitted from the light emitting element 125 is colored when it passes through the colored layer. can be.

[0016] In the area 170, the viewer 910 does not face the display area 131. Of the light 235 emitted from the light emitting element 125, some is incident on the colored layer of another sub-pixel and is not intended to be incident. In this case, we observe some of the light 235 converted into a color that is not present.

[0017] In this way, in a display device having a display area that faces the viewer and an area that does not face the viewer, Therefore, the display quality in the display area is likely to vary significantly, and the display quality is likely to deteriorate.

[0018] One embodiment of the present invention has an object to provide a display device or electronic device with excellent visibility. It shall be one.

[0019] Another embodiment of the present invention is to provide a display device or an electronic device with high display quality. One of the objectives of the organization is to

[0020] Another embodiment of the present invention is to provide a highly reliable display device or electronic device. This is one of our goals.

[0021] Another embodiment of the present invention is to provide a display device or electronic device that is not easily damaged. This is one of our goals.

[0022] Another embodiment of the present invention is to provide a display device or electronic device with low power consumption. This is one of our goals.

[0023] Another embodiment of the present invention is to provide a novel display device or electronic device. It shall be one.

[0024] The description of these problems does not preclude the existence of other problems. It is not necessary for the embodiment to solve all of these problems. The above will become apparent from the description in the specification, drawings, claims, etc. It is possible to extract other issues from the descriptions in the patent, claims, etc. [Means for solving the problem]

[0025] One aspect of the present invention is a display device having a display area including a first area and a second area. a pixel having a plurality of sub-pixels, an arrangement direction of the sub-pixels in the first region; The display device is characterized in that the arrangement direction of the sub-pixels in the second region is different.

[0026] Alternatively, one embodiment of the present invention is a display device including a first display region and a second display region each having a pixel. and a surface of the first display area is inclined relative to a surface of the second display area, The pixel has a plurality of sub-pixels, and the arrangement direction of the sub-pixels in the first display region and the arrangement direction of the sub-pixels in the second display region The display device is characterized in that the arrangement directions of the sub-pixels in the display device are different.

[0027] Alternatively, one embodiment of the present invention is a display device having a display region including a first region and a second region. The direction of the normal near the center of the first region is different from the direction of the normal near the center of the second region. The display region has a plurality of pixels, each of the pixels having a plurality of sub-pixels, and A display characterized in that the arrangement direction of the pixels is different from the arrangement direction of the sub-pixels in the second region. It is a device.

[0028] Alternatively, one embodiment of the present invention is a display device including a first display region and a second display region each having a pixel. and the pixel has a first sub-pixel and a second sub-pixel, and in the first display region The first subpixel and the second subpixel are arranged in a first direction, and in the second display region, The subpixel and the second subpixel are arranged in a second direction, and the first direction is different from the second direction. The display device is characterized by the above. Effect of the Invention

[0029] According to one embodiment of the present invention, a display device or an electronic device with excellent visibility can be provided. can.

[0030] According to another aspect of the present invention, a display device or an electronic device having high display quality is provided. It is possible.

[0031] According to another embodiment of the present invention, a highly reliable display device or electronic device is provided. It is possible.

[0032] According to another embodiment of the present invention, a display device or electronic device that is not easily damaged is provided. It is possible.

[0033] According to another embodiment of the present invention, a display device or an electronic device with low power consumption is provided. It is possible.

[0034] According to another aspect of the present invention, a novel display device or electronic device can be provided. The description of these effects does not preclude the existence of other effects. An embodiment of the invention does not necessarily have to have all of these effects. The effects of the above are self-evident from the description, drawings, claims, etc. Other effects can be extracted from descriptions in the specification, drawings, claims, etc. [Brief description of the drawings]

[0035] [Figure 1] 1A to 1C are diagrams illustrating one embodiment of a display device. [Diagram 2] 1A to 1C are diagrams illustrating one embodiment of a display device. [Diagram 3] 1A to 1C are diagrams illustrating one embodiment of a display device. [Figure 4] 1A and 1B are a block diagram and a circuit diagram illustrating one embodiment of a display device. [Diagram 5] 1A to 1C are diagrams illustrating an example of the configuration of a pixel. [Figure 6] FIG. 2 is a cross-sectional view illustrating a configuration example of a pixel. [Figure 7] FIG. 2 is a cross-sectional view illustrating a configuration example of a pixel. [Figure 8] FIG. 2 is a cross-sectional view illustrating a configuration example of a pixel. [Figure 9] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 10] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 11] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 12] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 13] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 14] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 15] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 16] 1A to 1C are diagrams illustrating one embodiment of a display device. [Figure 17] 1A to 1C illustrate examples of the structure of a light-emitting element. [Figure 18] 3A and 3B are diagrams for explaining an example of a planar shape and arrangement of pixels; [Figure 19] A diagram explaining the problem. [Figure 20] A diagram explaining the problem. [Figure 21] 1A to 1C are diagrams illustrating one embodiment of a display device. [Figure 22] 1A to 1C are diagrams illustrating one embodiment of a display device. [Figure 23] 1A to 1C are diagrams illustrating examples of electronic devices. [Figure 24] 1A to 1C are diagrams illustrating one embodiment of a display device. [Diagram 25] 1A to 1C are diagrams illustrating one embodiment of a display device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0036] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention may be modified in various ways in form and detail without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be modified in various ways. In addition, the present invention is not limited to the above embodiment. In the drawings, the same reference numerals are used to denote the same parts or parts having similar functions. Therefore, the repeated explanation will be omitted.

[0037] In each figure described in this specification, the size, layer thickness, or area of ​​each component is based on the actual size and thickness of the layer. In some cases, the details may be exaggerated or abbreviated for clarity. In particular, in top and perspective views, some parts may be drawn in a simplified manner to make the drawings easier to understand. Description of components may be omitted.

[0038] In addition, the position, size, range, etc. of each component shown in the drawings are for the purpose of facilitating understanding of the invention. Therefore, the actual location, size, range, etc. may not be shown. The invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings. For example, In the actual manufacturing process, resist masks, etc., may be unintentionally damaged by etching or other processes. However, in order to make it easier to understand, these may be omitted.

[0039] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. It does not indicate any order or ranking, such as the order of processes or stacking. In addition, even if a term is not accompanied by an ordinal number in this specification, etc., it is possible to confuse the constituent elements. In order to avoid this, ordinal numbers may be used in the claims.

[0040] In addition, the terms "electrode" and "wiring" used in this specification and the like do not limit the functionality of these components. For example, an "electrode" may be used as part of a "wire." In addition, the term "electrode" or "wiring" may be used to refer to the plural "electrodes" or "wirings". This also includes cases where the "line" is formed as a single unit.

[0041] In this specification, the terms "above" and "below" refer to the positional relationship of components directly above or below each other. For example, "the electrode on insulating layer A is directly in contact with the insulating layer A" is not limited to the above. If the expression is "electrode B", it is not necessary for electrode B to be formed directly on insulating layer A. The inclusion of other components between the edge layer A and the electrode B is not excluded.

[0042] The source and drain functions may also be different in some cases, such as when transistors of different polarities are used, or when When the direction of the current changes during operation of the circuit, the two are interchangeable depending on the operating conditions. Therefore, it is difficult to determine which is the source and which is the drain. In this specification, the terms source and drain may be used interchangeably. It shall be so.

[0043] In addition, in this specification, "electrically connected" means "something that has some electrical effect" " includes cases where the device is connected via "anything that has some electrical effect." " is not subject to any particular restriction as long as it enables the transmission and reception of electrical signals between the connection objects. Therefore, even if it is expressed as "electrically connecting," in the actual circuit, In some cases, there are no physical connections and only wires running along the wiring.

[0044] In this specification, "parallel" means that two straight lines are at an angle of -10° or more and 10° or less. Therefore, it includes the case where the angle is between -5° and 5°. "Straight" and "orthogonal" mean that two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, it includes the case where the angle is between 85° and 95°.

[0045] In this specification, when an etching process is performed after a photolithography process, In this case, unless otherwise specified, the resist mask formed in the photolithography process is It shall be removed after the etching process is completed.

[0046] (Embodiment 1) The display device 100 shown in FIG. 1A has a display area 131, an area 160 facing a viewer, The display area 131 has an area 170 that does not face the viewer. 1B and 1C show the configuration of the driving circuit 132b and the driving circuit 133. FIG. 1B is a cross-sectional view of a region 170. FIG. 1(C) shows a state in which region 170 is curved. FIG. 1B and FIG. 1C show the vicinity of the center of the region 160 in the portion A1-A2. The direction of the normal to the region 170 near the center is shown as normal 168, and the direction of the normal to the region 170 near the center is shown as normal 178. In both cases of FIG. 1B and FIG. 1C, the vicinity of the center of the region 160 The direction of the normal to the center of the region 170 is different from the direction of the normal to the center of the region 170.

[0047] The display device 100 also includes a substrate 111 and a substrate 121. 21, a light-emitting element and a coloring layer (not shown). FIG. 1(E) is an enlarged view of a portion 161 that is a part of the display area 131. FIG. 1 is an enlarged view of a portion 171 that is a part of the display area 131 in the area 170. 1F is an enlarged view of a portion 181 which is the boundary position between the regions 160 and 170.

[0048] The display area 131 has a plurality of pixels arranged in a matrix. These sub-pixels are arranged in a stripe pattern, and each sub-pixel is a red It emits colored light, green light, and blue light.

[0049] FIG. 1 shows a case where the planar shape of the sub-pixel is rectangular. An arrangement in which these sub-pixels are arranged horizontally so that their long sides are adjacent is called an "H arrangement." An arrangement in which the long sides of the sub-pixels are arranged vertically so that they are adjacent is called a "V arrangement." The direction of the rows and the direction of the V array are different. 1 shows a case where the direction 166 and the arrangement direction 176 of the V arrangement are perpendicular to each other, but the present invention is not limited to this.

[0050] In FIG. 1D, the pixel in region 160 is shown as pixel 165, which is a subpixel that emits red light. The subpixel emitting green light is designated as subpixel 165R, the subpixel emitting green light is designated as subpixel 165G, and the subpixel emitting blue light is designated as subpixel 165G. The pixel 165 is shown as pixel 165B. The pixel 165 has three sub-pixels arranged in an H arrangement. do.

[0051] In FIG. 1E, the pixel in region 170 is shown as pixel 175, which is a subpixel that emits red light. The subpixel emitting green light is designated as subpixel 175R, the subpixel emitting green light is designated as subpixel 175G, and the subpixel emitting blue light is designated as subpixel 175G. The pixel 175 is shown as pixel 175B. The pixel 175 has three sub-pixels arranged in a V arrangement. do.

[0052] The color of light emitted by the sub-pixels may be yellow, cyan, magenta, etc., in addition to red, green, and blue. In addition, these lights may be used in combination. For example, one pixel may have four sub-pixels. The sub-pixels may be arranged to emit red, green, blue and yellow light, respectively. This makes it possible to improve the reproducibility of intermediate tones in particular. This improves the display quality of the display device. Also, as shown in Figures 24(A), 24(B), and 24(C), The pixel may be provided with four sub-pixels, each of which emits red, green, blue, and white light. By providing a sub-pixel that emits white light, the brightness of the display area can be increased. Depending on the application of the display device, one pixel may be composed of two sub-pixels.

[0053] In FIG. 24A, a pixel in region 160 is shown as pixel 165, and a subpixel 166 emitting red light is shown. The subpixel that emits green light is subpixel 165R, the subpixel that emits green light is subpixel 165G, and the subpixel that emits blue light is subpixel 165G. The subpixel 165B emits white light, and the subpixel 165W emits white light. The four sub-pixels are arranged in an H array.

[0054] In FIG. 24B, a pixel in region 170 is shown as pixel 175, and a subpixel 176 emitting red light is shown. The subpixel that emits green light is subpixel 175R, the subpixel that emits green light is subpixel 175G, and the subpixel that emits blue light is subpixel 175G. The subpixel 175B emits white light, and the subpixel 175W emits white light. In this example, the four sub-pixels are arranged in a V array.

[0055] The occupied area and shape of each sub-pixel may be the same or different. The arrangement may be a method other than the stripe arrangement. For example, a delta It is also possible to apply a pixel array, a Bayer array, a Pentile array, etc. Examples of the case where the code arrangement is applied are shown in FIG. 25(A), FIG. 25(B), and FIG. 25(C).

[0056] Next, the effect obtained by forming the sub-pixel arrangement of the pixel 175 into a V arrangement will be described with reference to FIG. 2 will be used to explain.

[0057] FIG. 2A shows an image of an observer 910 and a region 160 of light 235 emitted from a pixel 165. FIG. 2A is a diagram for explaining the relationship between pixels 165 and an arrangement direction 166. FIG. 2 is a schematic cross-sectional view taken from an orthogonal direction.

[0058] In the area 160, the viewer 910 and the display area 131 face each other, so the pixel 165 is also 0. Therefore, the light emitted from the light emitting element of the subpixel is The light is converted by the colored layer and reaches the viewer 910. For example, in the subpixel 165G, The white light 235 emitted from the light emitting element 125 of the subpixel 165G is reflected by the color layer 266. The light is converted into green light 235 by G and reaches the observer 910. A part of the white light 235 emitted from the pixel is scattered and enters the colored layer of another subpixel, resulting in unintended However, in the region 160, the observer 910 and the display region 1 31 faces the observer, so the light 235 that has been converted to an unintended color by scattering reaches the observer 910. Hardly recognizable.

[0059] FIG. 2B shows an image of an observer 910 and the distribution of light 235 emitted from a pixel 175 in a region 170. FIG. 2B is a diagram for explaining the relationship between the pixel 175 and the pixel 176. FIG.

[0060] In the area 170, the viewer 910 does not face the display area 131. The light 235 emitted from the light emitting element 125 is incident on the colored layer of another sub-pixel and converted. However, the display device 100 exemplified in this embodiment is Since the sub-pixels of the pixel 175 are arranged in a V-arrangement, the light reaches the viewer 910. The light 235 that is incident on the colored layers of the other sub-pixels and converted is also substantially the same color as originally intended. is converted to

[0061] By arranging the sub-pixels of the pixel 175 in a V arrangement, the display quality of the display device 100 can be improved. Therefore, it is possible to realize a display device having excellent visibility. Moreover, a display device with good display quality can be realized.

[0062] In this embodiment, the right or left side of the display area 131 of the display device 100 is Although the case of bending or curving has been described, one embodiment of the present invention is not limited thereto. For example, the upper or lower side of the display area 131 may be bent or curved, or the display area 131 may be Even if the corners are bent or curved, the display can be maintained by appropriately setting the arrangement of the sub-pixels. A high-quality display device can be realized.

[0063] Although the light emitting element 125 emits white light 235, the present invention can be applied to One embodiment of the configuration is not limited to this. In that case, the light emitting element 125 may emit light in one of the colors for each subpixel. Preferably, they emit light of different colors.

[0064] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0065] (Embodiment 2) In this embodiment, a configuration example of the display device 100 will be described with reference to FIG. 3. 1(A) is a schematic cross-sectional view of a portion X1-X2 indicated by a dashed line in FIG.

[0066] <Display device configuration> The display device 100 illustrated in this specification includes a first electrode 115, an EL layer 117, a second electrode 118, and a The light emitting element 125 includes a display region 118 and a terminal electrode 216. A plurality of light emitting elements 125 are formed in the light emitting element 31. A controlling transistor 232 is connected.

[0067] The terminal electrode 216 is connected to the external electrode 1 through an anisotropic conductive connection layer 123 provided in the opening 122. 24. The terminal electrode 216 is electrically connected to the driving circuit 132a, the driving circuit 132b, and the drive circuit 133.

[0068] The driving circuit 132a, the driving circuit 132b, and the driving circuit 133 are connected to a plurality of transistors 2 52. The driving circuit 132a, the driving circuit 132b, and the driving circuit 13 3 is a signal supplied from the external electrode 124 to a light emitting element 125 in the display area 131 The device has the function of determining whether to supply

[0069] The display device 100 illustrated in this specification is a display device in which a substrate 111 and a substrate 121 are bonded to each other via an adhesive layer 120. The insulating layer 205 is formed on the substrate 111 via the adhesive layer 112. The insulating layer 205 is made of silicon oxide, silicon nitride, silicon oxynitride, or nitride. Silicon oxide, aluminum oxide, aluminum oxynitride, or aluminum nitride oxide It is preferable to form the insulating layer 205 by a single layer or a multilayer. It can be formed by using a VD method, a thermal oxidation method, a coating method, a printing method, or the like.

[0070] In addition, an insulating layer 145 is formed on the substrate 121 via an adhesive layer 142. A light-shielding layer 264 is formed on the substrate 121 via an insulating layer 145. A color layer 266 and an overcoat layer 268 are formed.

[0071] The insulating layer 205 functions as a base layer and prevents the transistor from being damaged by the substrate 111, the adhesive layer 112, etc. This can prevent or reduce the diffusion of moisture and impurity elements into the transistor and light emitting element. In addition, the insulating layer 145 functions as a base layer, and prevents the transistor from being exposed to the substrate 121, the adhesive layer 142, etc. This can prevent or reduce the diffusion of moisture and impurity elements into the MOS transistor or light emitting element. Layer 145 may be formed using materials and methods similar to those used for insulating layer 205 .

[0072] The substrates 111 and 121 are made of an organic resin material or a glass having a sufficient thickness to be flexible. The display device 100 may have a so-called bottom emission structure (lower surface In the case of a display device having a double-side emission structure, the substrate 111 is provided with an EL A material that transmits light emitted from the layer 117 is used. In the case of a light-emitting display device or a dual-side light-emitting display device, an EL layer 1 is formed on the substrate 121. A material that is transparent to light emitted from 17 is used.

[0073] Flexibility and transparency to visible light that can be used for the substrate 121 and the substrate 111 Examples of materials having this property include polyethylene terephthalate resin and polyethylene naphthalate resin. Fatty acids, polyacrylonitrile resins, polyimide resins, polymethyl methacrylate resins, poly Carbonate resin, polyethersulfone resin, polyamide resin, cycloolefin resin Polystyrene resin, polyamide-imide resin, polyvinyl chloride resin, etc. In the case where light transmission is not required, a non-light-transmitting substrate may be used. 21 or the substrate 111, a stainless steel substrate, a stainless steel foil substrate, or the like is used. This is also fine.

[0074] The thermal expansion coefficient of the substrate 121 and the substrate 111 is preferably 30 ppm / K or less, and more preferably 10 ppm / K or less. More preferably, the concentration is 10 ppm / K or less. A film containing nitrogen and silicon, such as silicon nitride or silicon oxynitride, or a film containing aluminum nitride, etc. A protective film with low water permeability, such as a film containing nitrogen and aluminum, may be formed. The substrate 121 and the substrate 111 are structures in which a fibrous body is impregnated with an organic resin (so-called plastics). (also called repreg) may be used.

[0075] By using such a substrate, it is possible to provide a display device that is less likely to break. It is possible to provide a lightweight display device. Alternatively, it is possible to provide a display device that is easy to bend. This can be done.

[0076] In addition, a transistor 232, a transistor 252, a terminal electrode 216, In this embodiment, the transistor 232 and the The transistor 252 is a channel-etched type transistor, which is a bottom-gate type transistor. Although a transistor is shown as an example, a channel protection transistor or a top gate transistor can also be used. It is also possible to use a transistor or the like. It is also possible to use a dual-gate transistor having a structure in which a gate electrode is sandwiched between the gate electrodes.

[0077] The transistor 232 and the transistor 252 may have a similar structure, except that The size of the transistor (e.g., the channel length and the channel width) of each transistor can be adjusted appropriately.

[0078] The transistor 232 and the transistor 252 include a gate electrode 206, a gate insulating layer 20 7, a semiconductor layer 208, a source electrode 209a, and a drain electrode 209b.

[0079] A terminal electrode 216, a wiring 219, a gate electrode 206, a source electrode 209a, and a drain The electrode 209b can be formed using the same material and method as the terminal electrode 216. The gate insulating layer 207 is formed by the same material and method as the insulating layer 205. can be done.

[0080] The semiconductor layer 208 may be formed using an amorphous semiconductor, a microcrystalline semiconductor, a polycrystalline semiconductor, or the like. For example, amorphous silicon and microcrystalline germanium can be used. In addition, compound semiconductors such as silicon carbide, gallium arsenide, oxide semiconductors, and nitride semiconductors, An organic semiconductor or the like can be used.

[0081] In addition, oxide semiconductors have a large energy gap of 2.8 eV or more, and therefore have a high In addition, in transistors obtained by processing oxide semiconductors under appropriate conditions, In this case, the off-state current is 100zA (1× 10 -19 A) or less, or 10zA (1×10 -20 A) and even 1zA(1 ×10 -21 A) or less. This makes it possible to provide a display device with low power consumption. It is possible.

[0082] In addition, when an oxide semiconductor is used for the semiconductor layer 208, the insulating layer in contact with the semiconductor layer 208 is It is preferable to use an insulating layer containing oxygen.

[0083] In addition, an insulating layer 210 is formed over the transistor 232 and the transistor 252, An insulating layer 211 is formed on the layer 210. The insulating layer 210 functions as a protective insulating layer. , impurities from layers above the insulating layer 210 to the transistors 232 and 252 The insulating layer 210 can prevent or reduce the diffusion of metal elements. 5 can be formed using the same materials and methods as those used in the embodiment 1.

[0084] In addition, in order to reduce the surface irregularities of the surface on which the light emitting element 125 is formed, the insulating layer 211 is subjected to a flattening process. The planarization treatment may be, but is not limited to, a polishing treatment (e.g., chemical Chemical Mechanical Polishing (CMP) ) or dry etching treatment.

[0085] In addition, by forming the insulating layer 211 using an insulating material having a planarizing function, the polishing process can be performed. The insulating material having a planarizing function may be, for example, polyimide resin, Organic materials such as acrylic resins can be used. In addition to the above organic materials, low dielectric constant materials can also be used. In addition, insulating layers made of these materials can be used. The insulating layer 211 may be formed by stacking a plurality of layers.

[0086] In addition, on the insulating layer 211, the light emitting elements 125 and the partition walls 1 for separating the light emitting elements 125 are formed. 14 has been formed.

[0087] The display device 100 reflects the light 235 emitted from the light emitting element 125 through the colored layer 266 to the substrate. This is a display device with a so-called top emission structure (upper surface emission structure) in which light is emitted from the plate 121 side. do.

[0088] The light emitting element 125 is also formed by a transistor through an opening provided in the insulating layer 211 and the insulating layer 210. The input terminal 232 is electrically connected to the transistor 232 .

[0089] In addition, since the substrate 121 is formed to face the substrate 111, the substrate 121 is called a “facing substrate”. Sometimes referred to as the "substrate."

[0090] As shown in FIG. 21(A), a touch sensor may be provided on the substrate 121. By providing the substrate 121 in this way, it is possible to reduce positional deviation when the substrate 121 is bent. The touch sensor is configured using a conductive layer 991 and a conductive layer 993. , with an insulating layer 992 provided therebetween.

[0091] Note that the conductive layer 991 and / or the conductive layer 993 may be formed of indium tin oxide or indium zinc. It is preferable to use a transparent conductive film such as lead oxide. However, in order to reduce the resistance, A layer having a low resistance material is used for part or all of the conductive layer 991 and / or the conductive layer 993. For example, aluminum, titanium, chromium, nickel, copper, yttrium, di The elemental metals zinc, molybdenum, silver, tantalum, or tungsten; or The alloy containing this as a main component can be used as a single layer or a multilayer structure. Metal nanowires may be used as the conductive layer 991 and / or the conductive layer 993. In this case, silver is suitable as the metal. This allows the resistance value to be reduced. Therefore, the sensitivity of the sensor can be improved.

[0092] The insulating layer 992 may be made of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, Aluminum oxide, aluminum oxynitride, or aluminum oxynitride, etc., may be used as a single layer or The insulating layer 992 is preferably formed in a multi-layer structure. The method can be a coating method, a printing method, or the like.

[0093] The touch sensor may be configured using a different substrate instead of the substrate 121. FIG. 1B shows an example of a configuration using a substrate 994. Note that the touch sensor is 994, but one aspect of the embodiment of the present invention is not limited thereto. It may be provided under the plate 994 (between the substrate 121 and the substrate 994). The plate 994 may be made of reinforced glass to protect the display device from scratches.

[0094] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0095] (Embodiment 3) In this embodiment, a more specific configuration example of the display device 100 will be described with reference to FIG. FIG. 4A is a block diagram for explaining the configuration of the display device 100. 100 includes a display area 131, a driving circuit 132a, a driving circuit 132b, and a driving circuit 13 3. The driving circuit 132a and the driving circuit 132b function as, for example, a scanning line driving circuit. The driver circuit 133 functions as, for example, a signal line driver circuit. Only one of the driver circuit 132a and the driver circuit 132b may be provided.

[0096] The display devices 100 are arranged substantially parallel to each other and include a driving circuit 132a and / or Alternatively, m wirings 135 whose potentials are controlled by the driving circuit 132b are arranged approximately in parallel with each other. and n wirings 136 whose potentials are controlled by a driving circuit 133. Furthermore, the display area 131 has a plurality of pixel circuits 134 arranged in a matrix. One pixel circuit 134 drives one sub-pixel. 2a, the driving circuit 132b, and the driving circuit 133 may be collectively referred to as a driving circuit unit. .

[0097] Each wiring 135 is connected to one of the pixel circuits 134 arranged in m rows and n columns in the display area 131. The wiring 1 is electrically connected to n pixel circuits 134 arranged in any row. 36 denotes m pixel circuits 134 arranged in m rows and n columns, each of which is arranged in one of the columns. It is electrically connected to the pixel circuit 134. Both m and n are integers of 1 or more.

[0098] 4B and 4C show a pixel circuit 134 of the display device shown in FIG. 4A. 1 shows an example of a circuit configuration that can achieve this.

[0099] [An example of a pixel circuit for a light-emitting display device] The pixel circuit 134 shown in FIG. 4B includes a transistor 431, a capacitor 233, and The pixel includes a transistor 232 , a transistor 434 , and a light-emitting element 125 .

[0100] One of the source electrode and the drain electrode of the transistor 431 is supplied with a data signal. The transistor 43 is electrically connected to a wiring (hereinafter, referred to as a signal line DL_n). The gate electrode of 1 is electrically connected to the wiring to which the gate signal is given (hereinafter, referred to as the scanning line GL_m). are connected to the network.

[0101] The transistor 431 is turned on or off to set the node 435.

[0102] One of a pair of electrodes of the capacitor 233 is electrically connected to the node 435, and the other is The source electrode and the drain electrode of the transistor 431 are electrically connected to the The other of the electrodes is electrically connected to node 435 .

[0103] The capacitor 233 functions as a storage capacitor that stores data written to the node 435. has.

[0104] One of the source electrode and the drain electrode of the transistor 232 is connected to the potential supply line VL_a. The other end is electrically connected to node 437. The gate electrode of the second transistor is electrically connected to a node 435 .

[0105] One of the source electrode and the drain electrode of the transistor 434 is electrically connected to the potential supply line V0. and the other is electrically connected to a node 437. The gate electrode is electrically connected to the scanning line GL_m.

[0106] One of the anode and the cathode of the light-emitting element 125 is electrically connected to the potential supply line VL_b. and the other is electrically connected to node 437.

[0107] The light-emitting element 125 may be, for example, an organic electroluminescence element (also called an organic EL element). However, the light emitting element 125 is not limited to this. An inorganic EL element made of an inorganic material may also be used.

[0108] A high power supply potential VDD is applied to one of the potential supply lines VL_a and VL_b. and the other is supplied with a low power supply potential VSS.

[0109] In the display device having the pixel circuit 134 in FIG. 4B, the driver circuit 132a or the driver circuit 132b sequentially selects the pixel circuits 134 in each row, and the transistors 431 and A data signal is written to node 435 by turning on resistor 434 .

[0110] The pixel circuit 134 in which data is written to the node 435 includes the transistor 431 and the transistor The transistor 434 is turned off, which results in a holding state. A current flows between the source and drain electrodes of the transistor 232 according to the potential of the input data. The amount of current flowing through the light emitting element 125 is controlled, and the light emitting element 125 emits light with a luminance according to the amount of current flowing through the light emitting element 125. By sequentially performing the above for each row, an image can be displayed.

[0111] [An example of a pixel circuit for a liquid crystal display device] The pixel circuit 134 shown in FIG. 4C includes a liquid crystal element 432, a transistor 431, and a capacitor. and child 233.

[0112] The potential of one of the pair of electrodes of the liquid crystal element 432 is appropriately set according to the specifications of the pixel circuit 134. The alignment state of the liquid crystal element 432 is set by data written to the node 436. Note that one of a pair of electrodes of the liquid crystal element 432 included in each of the pixel circuits 134 A common potential may be applied to the liquid crystal pixels of each row of the pixel circuits 134. A different potential may be applied to one of the pair of electrodes of the element 432 .

[0113] For example, the display device including the liquid crystal element 432 can be driven in a TN mode, an STN mode, or the like. mode, VA mode, ASM (Axially Symmetric Aligned Mi cro-cell mode, OCB (Optically Compensated B irefringence mode, FLC (Ferroelectric Liquid d Crystal) mode, AFLC (AntiFerroelectric Liq. uid Crystal) mode, MVA mode, PVA (Patterned Ver (Artificial Alignment) mode, IPS mode, FFS mode, or TBA (Transverse Bend Alignment) mode, etc. may also be used. In addition to the above-mentioned driving method, the display device can be driven by an ECB (Electric Carrier Bipolar Transistor) or the like. Ally Controlled Birefringence mode, PDLC(P Oligomeric Dispersed Liquid Crystal (PNLC) mode (Polymer Network Liquid Crystal) mode, guest hole However, the liquid crystal element and its driving method are not limited to these. A variety of different ones can be used.

[0114] In addition, a liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent The liquid crystal element 432 may be configured with the liquid crystal. Since the length is short and the film is optically isotropic, no alignment treatment is required. Therefore, the viewing angle dependence is small.

[0115] As the display element, a display element other than the light emitting element 125 and the liquid crystal element 432 is used. For example, electrophoretic elements, electronic ink, and electrophotography are used as display elements. Welding elements, MEMS (Microelectromechanical systems), digital Digital Micromirror Device (DMD), Digital Microshutter (DMS), It is also possible to use MOD (Interference Modulation) elements. .

[0116] In the pixel circuit 134 in the mth row and the nth column, One of the electrodes is electrically connected to the signal line DL_n, and the other is electrically connected to the node 436. The gate electrode of the transistor 431 is electrically connected to the scanning line GL_m. Transistor 431 transmits data to node 436 by being turned on or off. It has the function of controlling the writing of data signals.

[0117] One of a pair of electrodes of the capacitor 233 is connected to a wiring to which a specific potential is supplied (hereinafter, a capacitor line CL ) and the other is electrically connected to node 436. The other of the pair of electrodes of 32 is electrically connected to a node 436. The value of is set appropriately according to the specifications of the pixel circuit 134. 6 serves as a storage capacitor for storing data written therein.

[0118] For example, in a display device having the pixel circuit 134 shown in FIG. 4C, each The pixel circuits 134 in the row are sequentially selected, and the transistors 431 are turned on to connect the node 436 to the Write the data signal.

[0119] In the pixel circuit 134 in which a data signal is written to the node 436, the transistor 431 is turned off. By repeating this for each row, the image can be displayed. .

[0120] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0121] (Embodiment 4) In this embodiment, a pixel that can be applied to the pixel 165 and the pixel 175 of the display device 100 is A more specific configuration example of the element circuit 134 will be described with reference to FIGS.

[0122] [Example of the configuration of pixel 165] First, a configuration example of the pixel 165 will be described. 5(A) is an enlarged plan view of the light-emitting element 12. 5 and the colored layer 266 are omitted. For the same reason, in FIG. 6, the pixel circuit 134 and the like are omitted. 13 is a cross-sectional view of the portion X3-X4 indicated by the dashed dotted line.

[0123] As described above, one pixel circuit 134 can drive one sub-pixel. Thus, the pixel 165 is driven by at least three pixel circuits 134. The three pixel circuits 134 that drive the pixel 165 are designated as pixel circuit 134R, pixel circuit 13 In the pixel 165, the pixel circuit 134 is shown in the longitudinal direction as 4G and 134B. The longitudinal direction of the light emitting element 125 and the color layer 266 are approximately aligned. The color layer 266R overlaps with the pixel circuit 134R, and the color layer 266G overlaps with the pixel circuit 134G. The colored layer 266B overlaps with the pixel circuit 134B. 4R, and the color layer 266G is driven by the pixel circuit 134G, and the color layer 266 B is driven by pixel circuit 134B.

[0124] The wiring 135 shown in FIG. 5(A) and FIG. 6 corresponds to the scanning line GL_m. A part of 5 corresponds to the gate electrode 206, and the transistors 431 and 434 A part of the wiring 138 serves as one electrode of the capacitor 233. The other part functions as a gate electrode of the transistor 232. The wiring 135, the wiring 138, and the wiring 137 correspond to the potential supply line VL_a. , can be formed using the same materials and methods as those of the gate electrode 206.

[0125] In addition, a gate insulating layer 207 is formed on the wiring 135, the wiring 138, and the wiring 137. The gate insulating layer 207 on the wiring 138 functions as a dielectric layer of the capacitor 233. In addition, a wiring 136, a wiring 139, and a wiring 138 are formed on the gate insulating layer 207 and the semiconductor layer 208. 151, wiring 152, and wiring 156 (see FIG. 5(A) and FIG. 6). A part of the wiring 136 corresponds to a signal line DL_n. The wiring 139 functions as one of the source electrode and the drain electrode of the gate insulating layer 2. 07 through an opening 153. The wiring 1 serves as the other of the source electrode and the drain electrode of the transistor 431. A part of the wiring 156 corresponds to the potential supply line V0. A part of the wiring 151 functions as either a source electrode or a drain electrode of the transistor. The other of the source and drain electrodes of the transistor 434 is provided.

[0126] The wiring 151 functions as the other electrode of the capacitor 233. 207 through an opening 154. 2 serves as one of the source and drain electrodes of the transistor 232. The wiring 151 serves as the other of the source electrode and the drain electrode of the transistor 232. The wiring 136, the wiring 139, the wiring 151, the wiring 152, and the wiring 156 are connected to the source The electrode 209a and the drain electrode 209b are formed using the same material and method. This can be done.

[0127] An insulating layer 210 is formed on the wiring 136, the wiring 139, the wiring 151, the wiring 152, and the wiring 156. On the insulating layer 210, an insulating layer 211 is formed. The formed electrode 118 is formed through an opening 155 formed in the insulating layer 210 and the insulating layer 211. That is, the light emitting element 125 is electrically connected to the wiring 151. are connected to the network.

[0128] The light emitted from the light emitting element 125 is converted by the colored layer 266R to become light 235R. Other configurations are described in detail in other embodiments, so the description will be omitted here. do.

[0129] [Example of the configuration of pixel 175] Next, a configuration example of the pixel 175 will be described. FIG. 5C is an enlarged plan view of the pixel 175. For ease of understanding, FIG. 5C shows only the light emitting element 125 and the colored layer 266. and other descriptions have been omitted.

[0130] The pixel 175 is arranged in a V-shape by rotating the light emitting element 125 and the color layer 266 of the pixel 165 by 90 degrees. In this case, the arrangement of the pixel circuits 134 may remain in the H arrangement. 5 shows a cross-sectional view of the portion X5-X6 shown by the dashed line in FIG. 5(C).

[0131] In the display device 100 according to the embodiment of the present invention, the pixel circuit 134 is configured with the pixel 165 and the pixel 175. Therefore, there is no need to change the driving method between the area 160 and the area 170. If multiple driving circuits or driving methods are used within the display area 131, the manufacturing yield may decrease and the manufacturing process may become complicated. This tends to increase manufacturing costs, which is one of the factors that reduces the productivity of the display device. According to this, a display device having good productivity and good display quality can be realized.

[0132] [Modification of pixel configuration] In addition, the colored layer 266, the light-shielding layer 264, the overcoat layer 268, etc. are not provided. In that case, each subpixel may be provided with a white light emitting element 125 instead of the white light emitting element 125. A light emitting element 125R that emits red light, a light emitting element 125G that emits green light, and a light emitting element 125C that emits blue light. By using the optical element 125B, a color display can be performed. An example of a configuration that does not use the above is shown in FIG.

[0133] The light emitting element 125R, the light emitting element 125G, and the light emitting element 125B each include an EL layer 117R. , EL layer 117G, and EL layer 117B. 117B, red light 235R, green light 235G, blue light 235B, etc. In this way, the color layer 266 is not used. This improves color purity and reduces the amount of light loss.

[0134] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0135] (Embodiment 5) In this embodiment, an example of a manufacturing method of the display device 100 will be described with reference to FIGS. 9 to 14 are views of the area X1-X2 shown by the dashed line in FIG. Corresponds to a cross section.

[0136] [Forming a release layer] First, a release layer 113 is formed on an element formation substrate 101 (see FIG. 9(A)). The substrate 101 for forming the semiconductor device may be a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, A metal substrate or the like can be used. In addition, a substrate having heat resistance capable of withstanding the processing temperature of this embodiment is also suitable. A plastic substrate having such a structure may also be used.

[0137] The glass substrate may be made of, for example, aluminosilicate glass or aluminoborosilicate glass. Glass materials such as barium borosilicate glass are used. By adding more BaO, a more practical heat-resistant glass can be obtained. Russ etc. can be used.

[0138] The release layer 113 may be made of tungsten, molybdenum, titanium, tantalum, niobium, nickel, or copper. Baltic, Zirconium, Ruthenium, Rhodium, Palladium, Osmium, Iridium, An element selected from silicon, or an alloy material containing the element, or a compound material containing the element In addition, these materials can be formed in a single layer or a laminated layer. The crystal structure of the peeling layer 113 may be amorphous, microcrystalline, or polycrystalline. The peeling layer 113 may be made of aluminum oxide, gallium oxide, zinc oxide, titanium dioxide, etc. Indium oxide, indium tin oxide, indium zinc oxide, or InGaZn It can also be formed using a metal oxide such as O(IGZO).

[0139] The peeling layer 113 can be formed by a sputtering method, a CVD method, a coating method, a printing method, or the like. The coating method includes a spin coating method, a droplet ejection method, and a dispense method.

[0140] When the peeling layer 113 is formed as a single layer, it is preferably made of tungsten, molybdenum, or tungsten and molybdenum. It is preferable to use an alloy material containing molybdenum. Alternatively, the peeling layer 113 is formed as a single layer. In this case, tungsten oxide or oxynitride, molybdenum oxide or oxide Nitrides, or oxides or oxynitrides of alloys containing tungsten and molybdenum It is preferable that

[0141] The peeling layer 113 may be, for example, a layer containing tungsten and a layer containing an oxide of tungsten. When forming a stacked structure of layers containing tungsten, an oxide insulating layer is formed in contact with the layer containing tungsten. As a result, tungsten oxide is formed at the interface between the tungsten-containing layer and the oxide insulating layer. The surface of the layer containing tungsten may be subjected to a thermal oxidation treatment, an oxygen plating treatment, or the like. The tungsten oxide-containing A layer including the above-mentioned metal oxide may be formed.

[0142] In this embodiment, tungsten is formed as the peeling layer 113 by a sputtering method. .

[0143] [Forming an insulating layer] Next, an insulating layer 205 is formed as a base layer on the peeling layer 113 (see FIG. 9(A)). The edge layer 205 may be made of silicon oxide, silicon nitride, silicon oxynitride, silicon oxynitride, silicon oxide nitride, or oxide. Aluminum nitride, aluminum oxynitride, aluminum nitride oxide, etc., are used as a single layer or It is preferable to form the insulating layer 205 in a multi-layer structure. For example, the insulating layer 205 may be formed of silicon oxide and silicon nitride. It may be a two-layer structure made by laminating the above materials, or a five-layer structure made by combining the above materials. The layer 205 is formed by using a sputtering method, a CVD method, a thermal oxidation method, a coating method, a printing method, or the like. It is possible.

[0144] The thickness of the insulating layer 205 is 30 nm or more and 500 nm or less, preferably 50 nm or more and 400 nm or less. m or less.

[0145] The insulating layer 205 prevents the diffusion of impurity elements from the element formation substrate 101 and the peeling layer 113. In addition, even after the element formation substrate 101 is replaced with the substrate 111, Preventing the diffusion of impurity elements from the substrate 111 or the adhesive layer 112 to the light emitting element 125, or In this embodiment, the insulating layer 205 is formed by a plasma CVD method. A laminated film of silicon oxynitride with a thickness of 200 nm and silicon oxynitride with a thickness of 50 nm is used. .

[0146] [Forming the gate electrode] Next, a gate electrode 206 is formed on the insulating layer 205 (see FIG. 9(A)). Gate electrode 206 is made of aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten. or an alloy containing the above-mentioned metal elements or the above-mentioned metal elements. It can be formed by using a combination of alloys, etc. Also, manganese, zirconium, etc. The gate electrode 206 may be formed of one or more metal elements selected from the above. The insulating film may have a single layer structure or a laminated structure of two or more layers. For example, aluminum containing silicon A single-layer structure of an aluminum film, a two-layer structure of an aluminum film on a titanium film, and a titanium nitride film on a titanium film Two-layer structure with a titanium film laminated on top, a two-layer structure with a tungsten film laminated on top of a titanium nitride film, Two-layer structure in which a tungsten film is laminated on a tantalum film or a tungsten nitride film, a titanium film A two-layer structure with a copper film laminated on top, a titanium film, and an aluminum film laminated on top of the titanium film. There is also a three-layer structure in which a titanium film is formed on top of the aluminum. One selected from tantalum, tungsten, molybdenum, chromium, neodymium, and scandium Alternatively, an alloy film made by combining a plurality of layers, or a nitride film may be used.

[0147] The gate electrode 206 is made of indium tin oxide or indium oxide containing tungsten oxide. oxide, indium zinc oxide with tungsten oxide, indium oxide with titanium oxide Indium tin oxide, indium zinc oxide, silicon oxide with titanium oxide A light-transmitting conductive material such as indium tin oxide can also be used. A laminate structure of the above-mentioned light-transmitting conductive material and the above-mentioned metal element may also be used.

[0148] First, a metal oxide film is formed on the insulating layer 205 by plasma CVD, LPCVD, or MOCVD (Met (Al Organic Chemical Vapor Deposition) method, etc. The gate electrode 206 is formed by a CVD method, an ALD method, a sputtering method, a vapor deposition method, or the like. A conductive film is laminated, and a resist mask is formed on the conductive film by a photolithography process. When the conductive film that becomes the gate electrode 206 is formed by the MOCVD method, damage to the surface on which it is formed is likely to occur. Next, a resist mask is used to form a gate electrode 206. A part of the conductive film is etched to form a gate electrode 206. At this time, other wiring and The electrodes can also be formed at the same time.

[0149] The etching of the conductive film may be performed by either dry etching or wet etching, or both. In addition, when etching is performed by dry etching, If an ashing process is performed before removing the resist mask, it becomes easier to remove the resist mask using a stripping solution. It can be said that:

[0150] The gate electrode 206 may be formed by electrolytic plating, printing, inkjet printing, or the like instead of the above-mentioned method. It may be formed by a jet method or the like.

[0151] The thickness of the gate electrode 206 is preferably 5 nm to 500 nm, more preferably 10 nm to 300 nm. 00 nm or less, and more preferably 10 nm or more and 200 nm or less.

[0152] In addition, the gate electrode 206 is formed using a conductive material having a light-shielding property, so that the gate electrode 206 is protected from external This makes it difficult for the light to reach the semiconductor layer 208 from the gate electrode 206 side. As a result, fluctuations in the electrical characteristics of the transistor due to light irradiation can be suppressed.

[0153] [Forming the gate insulating layer] Next, the gate insulating layer 207 is formed (see FIG. 9(A)). The gate insulating layer 207 is, for example, For example, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide aluminum oxide, a mixture of aluminum oxide and silicon oxide, hafnium oxide, gallium oxide or A Ga-Zn-based metal oxide or the like may be used, and the layer may be a multilayer or a single layer.

[0154] The gate insulating layer 207 is made of hafnium silicate (HfSiO x ), nitrogen is added Hafnium Silicate (HfSi x O y N z ), nitrogen-doped hafnium aluminium minate (HfAl x O y N z ), hafnium oxide, yttrium oxide and other high- By using k-type materials, the gate leakage of transistors can be reduced. For example, silicon oxynitride A laminate of carbon and hafnium oxide may also be used.

[0155] The thickness of the gate insulating layer 207 is 5 nm or more and 400 nm or less, and more preferably 10 nm or more. It is preferably 300 nm or less, and more preferably 50 nm or more and 250 nm or less.

[0156] The gate insulating layer 207 can be formed by a sputtering method, a CVD method, a deposition method, or the like. .

[0157] The gate insulating layer 207 may be a silicon oxide film, a silicon oxynitride film, or a silicon nitride oxide film. When forming a silicon film, a deposition gas containing silicon and an oxidizing gas are used as the source gas. Representative examples of deposition gases containing silicon include silane, disilane, Examples of oxidizing gases include trisilane, fluorinated silane, etc. Examples of oxidizing gases include oxygen, ozone, and nitrous oxide. , nitrogen dioxide, etc.

[0158] The gate insulating layer 207 is formed by sequentially depositing a nitride insulating layer and an oxide insulating layer from the gate electrode 206 side. By providing a nitride insulating layer on the gate electrode 206 side, From the gate electrode 206 side, hydrogen, nitrogen, an alkali metal, an alkaline earth metal, or the like is a semiconductor. In general, nitrogen, alkali metals, and Alkaline earth metals and the like function as impurity elements in semiconductors. It functions as an impurity element in a conductor. Therefore, the term "impurity" in this specification includes hydrogen, These include nitrogen, an alkali metal, or an alkaline earth metal.

[0159] In addition, when an oxide semiconductor is used as the semiconductor layer 208, an oxide insulating layer is provided on the semiconductor layer 208 side. By providing the edge layer, the defect level at the interface between the gate insulating layer 207 and the semiconductor layer 208 is reduced. As a result, a transistor with little deterioration in electrical characteristics can be obtained. When an oxide semiconductor is used for the semiconductor layer 208, When an oxide insulating layer containing more oxygen than the oxygen that satisfies the stoichiometric composition is used, In addition, the defect level density at the interface between the gate insulating layer 207 and the semiconductor layer 208 can be further reduced. This is preferable because it is possible to

[0160] In addition, when the gate insulating layer 207 is a stack of a nitride insulating layer and an oxide insulating layer as described above, In this case, the nitride insulating layer is preferably thicker than the oxide insulating layer.

[0161] Since the nitride insulating layer has a larger dielectric constant than the oxide insulating layer, the thickness of the gate insulating layer 207 is Even if the thickness is increased, the electric field generated in the gate electrode 206 can be efficiently transmitted to the semiconductor layer 208. In addition, by making the gate insulating layer 207 thick, the dielectric strength of the gate insulating layer 207 can be increased. Therefore, the reliability of the semiconductor device can be improved.

[0162] The gate insulating layer 207 is made of a first nitride insulating layer having few defects and a second nitride insulating layer having a hydrogen blocking property. A second nitride insulating layer having a high resistance and an oxide insulating layer are laminated in this order from the gate electrode 206 side. The gate insulating layer 207 may have a laminate structure in which a first nitride insulating layer having few defects is formed. By using the layer, the withstand voltage of the gate insulating layer 207 can be improved. By providing a second nitride insulating layer having a high hydrogen blocking property to the gate insulating layer 207, Hydrogen contained in the gate electrode 206 and the first nitride insulating layer moves to the semiconductor layer 208. This can be prevented.

[0163] An example of a method for forming the first nitride insulating layer and the second nitride insulating layer is shown below. Using a mixture of orthogonal, nitrogen, and ammonia gases as the source gases, the plasma CVD method Then, a silicon nitride film with few defects is formed as the first nitride insulating layer. By switching to a mixture of silane and nitrogen, hydrogen concentration is low and hydrogen is blocked. A silicon nitride film capable of being formed by this method is deposited as the second nitride insulating layer. By this method, a nitride insulating layer having few defects and a blocking property against hydrogen is laminated. A gate insulating layer 207 can then be formed.

[0164] The gate insulating layer 207 is made up of a third nitride insulating layer having a high impurity blocking property and a defect-resistant layer. A first nitride insulating layer having few defects, a second nitride insulating layer having high hydrogen blocking properties, and an oxide The gate electrode 206 may have a laminated structure in which a nitride insulating layer and a nitride insulating layer are laminated in this order from the gate electrode 206 side. The gate insulating layer 207 is provided with a third nitride insulating layer having high impurity blocking properties. Then, hydrogen, nitrogen, an alkali metal, an alkaline earth metal, or the like is introduced into the semiconductor from the gate electrode 206. This can prevent the material from migrating to the layer 208.

[0165] An example of a method for forming the first to third nitride insulating layers will be described below. The plasma CVD method was used with a mixture of silane, nitrogen, and ammonia as the source gas. A silicon nitride film having high impurity blocking properties is formed as the third nitride insulating layer. Next, the flow rate of ammonia is increased to form a silicon nitride film with fewer defects on the first nitride film. Next, the source gas is switched to a mixture of silane and nitrogen. The second silicon nitride film has a low hydrogen concentration and is capable of blocking hydrogen. This method of formation results in fewer defects and less impurities. The gate insulating layer 207 is formed by laminating a nitride insulating layer having blocking properties. can.

[0166] In addition, when forming a gallium oxide film as the gate insulating layer 207, the MOCVD method is used. It can be formed.

[0167] The semiconductor layer 208 in which the channel of the transistor is formed and the insulating layer containing hafnium oxide are The insulating layer is laminated on the insulating layer containing hafnium oxide, and electrons are injected into the insulating layer containing hafnium oxide. In this way, the threshold voltage of the transistor can be changed.

[0168] [Forming a semiconductor layer] The semiconductor layer 208 may be formed using an amorphous semiconductor, a microcrystalline semiconductor, a polycrystalline semiconductor, or the like. For example, amorphous silicon and microcrystalline germanium can be used. In addition, compound semiconductors such as silicon carbide, gallium arsenide, oxide semiconductors, and nitride semiconductors, The semiconductor layer 208 can be formed by a method such as plasma CVD or LPCVD. In addition to CVD methods such as MOCVD, ALD, sputtering, coating, The semiconductor layer 208 can be formed by a printing method or the like. This can reduce damage to the surface.

[0169] The thickness of the semiconductor layer 208 is 3 nm to 200 nm, preferably 3 nm to 100 nm. More preferably, the thickness is 3 nm or more and 50 nm or less. As the oxide semiconductor film 08, a 30-nm-thick oxide semiconductor film is formed by a sputtering method.

[0170] Next, a resist mask is formed over the oxide semiconductor film, and a conductive film is The semiconductor layer 208 is formed by selectively etching a part of the resist mask. The formation can be carried out by appropriately using a photolithography method, a printing method, an inkjet method, or the like. If the resist mask is formed by the inkjet method, a photomask is not used. This reduces manufacturing costs.

[0171] The oxide semiconductor film may be etched by either dry etching or wet etching. After etching of the oxide semiconductor film is completed, the resist mask is removed. (See Figure 9(B)).

[0172] [Forming source electrodes, drain electrodes, etc.] Next, the source electrode 209a, the drain electrode 209b, the wiring 219, and the terminal electrode 216 First, a conductive layer is formed on the gate insulating layer 207 and the semiconductor layer 208. The conductive film is formed by a method such as plasma CVD, LPCVD, or MOCVD. It can be formed by CVD, ALD, sputtering, deposition, coating, printing, etc. When a conductive film is formed by MOCVD, damage to the surface on which it is formed is reduced. It is possible.

[0173] Conductive films include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, Elemental metals consisting of tungsten, molybdenum, silver, tantalum, or tungsten, or The alloys mainly composed of silicon can be used as single layer or multilayer structures. Single-layer structure of aluminum film containing com, and double-layer structure of aluminum film laminated on titanium film , a two-layer structure in which an aluminum film is laminated on a tungsten film, and copper-magnesium-aluminum A two-layer structure in which a copper film is laminated on an aluminum alloy film, a two-layer structure in which a copper film is laminated on a titanium film, and a tungsten A two-layer structure in which a copper film is laminated on a stainless film, a titanium film or titanium nitride film, and the titanium film or An aluminum film or copper film is laminated on the titanium nitride film, and a titanium film is further laminated on the aluminum film or copper film. A three-layer structure forming a titanium nitride film or a molybdenum nitride film, an aluminum film or a copper film is laminated on the molybdenum film or the molybdenum nitride film; A three-layer structure in which a molybdenum film or molybdenum nitride film is then formed on top of the tungsten There is also a three-layer structure in which a copper film is laminated on a film, and a tungsten film is further formed on the copper film.

[0174] In addition, indium tin oxide, zinc oxide, indium oxide containing tungsten oxide, oxide Indium zinc oxide with tungsten oxide, indium oxide with titanium oxide, Indium tin oxide containing titanium, indium zinc oxide, indium with silicon oxide Conductive materials containing oxygen, such as aluminum tin oxide, and conductive materials containing nitrogen, such as titanium nitride and tantalum nitride. A conductive material may be used. In addition, the above-mentioned material containing a metal element and a conductive material containing oxygen may be used. Also, a laminated structure combining the above-mentioned material containing a metal element and It is also possible to use a laminated structure in which a conductive material containing nitrogen is combined. The product of a combination of a material containing an element, a conductive material containing oxygen, and a conductive material containing nitrogen It may also be a layered structure.

[0175] The thickness of the conductive film is preferably 5 nm to 500 nm, more preferably 10 nm to 300 nm. nm or less, and more preferably 10 nm or more and 200 nm or less. A tungsten film having a thickness of 300 nm is formed.

[0176] Next, a portion of the conductive film is selectively etched using a resist mask to form a source electrode 20. 9a, the drain electrode 209b, the wiring 219, and the terminal electrode 216 (formed in the same layer as The resist mask is formed by photolithography. The deposition may be carried out by using a technique such as a lithography method, a printing method, or an ink-jet method. When the inkjet method is used, no photomask is used, which reduces manufacturing costs. do.

[0177] The etching of the conductive film may be performed by either dry etching or wet etching, or both. In addition, a part of the exposed semiconductor layer 208 is removed by the etching process. There may be cases where this occurs.

[0178] After etching of the conductive film is completed, the resist mask is removed (see FIG. 9(C)).

[0179] [Forming an insulating layer] Next, the source electrode 209a, the drain electrode 209b, the wiring 219, and the terminal electrode 216 The insulating layer 210 is formed on the insulating layer 205 (see FIG. 9(D)). The present invention can be formed using a variety of materials and methods.

[0180] In addition, when an oxide semiconductor is used for the semiconductor layer 208, at least the semiconductor of the insulating layer 210 It is preferable to use an insulating layer containing oxygen in the region in contact with the layer 208. For example, the insulating layer 2 When the insulating film 10 is a multi-layer laminate, at least the layer in contact with the semiconductor layer 208 is made of silicon oxide. It is sufficient to form it.

[0181] [Formation of openings] Next, a portion of the insulating layer 210 is selectively etched using a resist mask to form an opening 12. At this time, other openings (not shown) are also formed at the same time. The resist mask is formed by appropriately using a photolithography method, a printing method, an inkjet method, or the like. If the resist mask is formed by the inkjet method, it is possible to use a photomask. Since no additional wiring is required, manufacturing costs can be reduced.

[0182] The etching of the insulating layer 210 may be performed by a dry etching method or a wet etching method. Both may be used.

[0183] By forming the opening 128, the drain electrode 209b and a part of the terminal electrode 216 are exposed. After the opening 128 is formed, the resist mask is removed.

[0184] [Forming a planarizing film] Next, the insulating layer 211 is formed on the insulating layer 210 (see FIG. 10(A)). can be formed using the same materials and methods as the insulating layer 205.

[0185] In order to reduce the surface irregularities on the surface on which the light emitting element 125 is formed, the insulating layer 211 is subjected to a planarization process. The planarization process is not particularly limited, but may be a polishing process (e.g., chemical mechanical polishing). Polishing method (Chemical Mechanical Polishing: CMP), This can be achieved by a dry etching process.

[0186] In addition, by forming the insulating layer 211 using an insulating material having a planarizing function, the polishing process can be performed. The insulating material having a planarizing function may be, for example, polyimide resin, Organic materials such as acrylic resins can be used. In addition to the above organic materials, low dielectric constant materials can also be used. In addition, insulating layers made of these materials can be used. The insulating layer 211 may be formed by stacking a plurality of layers.

[0187] In addition, a part of the insulating layer 211 in a region overlapping the opening 128 is removed to form an opening 129. At this time, other openings (not shown) are also formed at the same time. The insulating layer 211 in the area where the opening 129 is to be formed is removed by photolithography on the insulating layer 211. A resist mask is formed by a lithography process, and the insulating layer 211 is covered with the resist mask. The opening 129 can be formed by etching the unfilled area. The surface of the drain electrode 209b is exposed.

[0188] In addition, by using a photosensitive material for the insulating layer 211, it is possible to avoid the use of a resist mask. In this embodiment, the opening 129 can be formed without using a photosensitive polyimide resin. This is used to form the insulating layer 211 and the opening 129 .

[0189] [Forming the anode] Next, the electrode 115 is formed over the insulating layer 211 (see FIG. 10B). The electrode 115 is It is formed using a conductive material that efficiently reflects the light emitted by the EL layer 117 that will be formed later. It is preferable that the electrode 115 is a single layer, and may be a multi-layer structure. For example, when the electrode 115 is used as an anode, the layer in contact with the EL layer 117 is made of indium tin oxide. The layer is a layer having a work function larger than that of the EL layer 117 such as an oxide and having light transmitting properties. A highly reflective layer (such as aluminum, an alloy containing aluminum, or silver) may be provided. stomach.

[0190] In this embodiment, a display device having a top emission structure is illustrated. Bottom emission structure (bottom injection structure), or dual emission structure (double-sided injection structure) ) display device.

[0191] The display device 100 is configured as a bottom emission structure or a dual emission structure. In the case of forming a display device having a dual emission structure, the electrode 115 is made of a conductive material having a light transmitting property. The material should be used.

[0192] The electrode 115 is formed by forming a conductive film to be the electrode 115 on the insulating layer 211 and then forming a resist on the conductive film. A resist mask is formed on the conductive film, and a region of the conductive film that is not covered with the resist mask is etched. The conductive film can be formed by etching using a dry etching method or a wet etching method. The resist mask is then formed on the substrate 10. ... This can be carried out by appropriately using a photolithography method, a printing method, an inkjet method, or the like. If the resist mask is formed by the inkjet method, a photomask is not used, so the manufacturing process is After the electrode 115 is formed, the resist mask is removed.

[0193] [Forming a partition] Next, the partition wall 114 is formed (see FIG. 10(C)). The partition wall 114 is a layer that separates adjacent pixels from each other. This is provided to prevent the optical element 125 from accidentally shorting out electrically and erroneously emitting light. When a metal mask is used to form the EL layer 117 described later, the metal mask is in contact with the electrode 115. The partition wall 114 is made of epoxy resin, acrylic resin, imide resin, etc. The partition wall can be formed of an organic resin material such as resin, or an inorganic material such as silicon oxide. 114 is designed so that the side wall is an inclined surface formed with a taper or a continuous curvature. By forming the side wall of the partition wall 114 in such a shape, This can improve the coverage of the EL layer 117 and the electrodes 118.

[0194] [Forming the EL layer] The configuration of the EL layer 117 will be described in the seventh embodiment.

[0195] [Forming the cathode] In this embodiment, the electrode 118 is used as a cathode, and therefore the electrode 118 is connected to the EL layer 11 described later. It is preferable to form the gate electrode 7 using a material having a small work function that can inject electrons. Instead of a single metal with a low work function, an alkali metal or alkaline earth metal with a low work function is used. A layer of metal with a thickness of several nanometers is formed as a buffer layer, and then a metal material such as aluminum is formed on top of it. The insulating layer is formed using a conductive oxide material such as indium tin oxide or a semiconductor material. The buffer layer may be made of an oxide, halide, or magnesium of an alkaline earth metal. An alloy such as neodymium-silver can also be used.

[0196] In addition, when light emitted from the EL layer 117 is extracted through the electrode 118, the electrode 118 is The electrode 115, the EL layer 117, and the electrode 118 preferably have a property of transmitting visible light. As a result, the light emitting element 125 is formed (see FIG. 10(D)).

[0197] [Forming the opposing element forming substrate] The light-shielding layer 264, the coloring layer 266, the overcoat layer 268, the insulating layer 145, the release layer 1 The element forming substrate 141 on which the element 43 is formed is placed on the element forming substrate 101 via the adhesive layer 120. The element formation substrate 141 is formed facing the element formation substrate 101 (see FIG. 11(A)). Since they are formed to overlap each other, the element forming substrate 141 is sometimes called the "opposite element forming substrate." The configuration of the element forming substrate 141 (opposing element forming substrate) will be described later.

[0198] The adhesive layer 120 is formed in contact with the electrode 118. The element formation substrate 141 has the adhesive layer 120. The adhesive layer 120 may be a photocurable adhesive, a reaction curable adhesive, or a heat curable adhesive. Adhesives such as epoxy resins, acrylics, or anaerobic adhesives can be used. For the top emission structure, the adhesive layer 1 20 contains desiccants (such as zeolite) whose size is less than the wavelength of light, and fillers with a high refractive index (such as acid When titanium dioxide, zirconium, etc. are mixed, the efficiency of extracting the light emitted by the EL layer 117 increases. This is preferable because it improves the

[0199] [Removing the element formation substrate from the insulating layer] Next, the element forming substrate 101 that is in contact with the insulating layer 205 via the peeling layer 113 is removed from the insulating layer 205. The peeling method is to apply mechanical force (human force). (e.g. peeling by hand or with a jig, separating by rotating a roller, ultrasonic, etc.) For example, the peeling layer 113 may be cut with a sharp blade or by laser light irradiation. Make a notch and inject water into the notch. Or, spray water onto the notch. Water seeps into the gap between the release layer 113 and the insulating layer 205 due to the capillary phenomenon, and the element formation substrate The plate 101 can be easily peeled off from the insulating layer 205 .

[0200] [Bonding the substrates together] Next, the substrate 111 is bonded to the insulating layer 205 via the adhesive layer 112 (FIG. 12(A), (See FIG. 12B.) The adhesive layer 112 may be made of the same material as the adhesive layer 120. do.

[0201] [Peeling the opposing element forming substrate from the insulating layer] Next, the element forming substrate 141 that is in contact with the insulating layer 145 via the release layer 143 is removed from the insulating layer 145. The element formation substrate 141 is peeled off from the above-mentioned element formation substrate (see FIG. 13(A)). This can be done in the same manner as in peeling off the substrate 101.

[0202] [Bonding the substrates together] Next, the substrate 121 is attached to the insulating layer 145 via the adhesive layer 142 (see FIG. 13(B)). The adhesive layer 142 may be made of the same material as the adhesive layer 120.

[0203] [Forming an opening] Next, the substrate 121, the adhesive layer 142, and the like in the area overlapping the terminal electrode 216 and the opening 128 are The insulating layer 145, the color layer 266, the overcoat layer 268, and the adhesive layer 120 are removed. 14A, an opening 122 is formed. A portion of the surface of the terminal electrode 216 is exposed.

[0204] [Forming the external electrodes] Next, an anisotropic conductive connection layer 123 is formed in the opening 122, and a surface is formed on the anisotropic conductive connection layer 123. An external electrode 124 for inputting power and signals to the display device 100 is formed (see FIG. 14(B)). The terminal electrode 216 is electrically connected to the external electrode 124 via the anisotropic conductive connection layer 123. The external electrode 124 is, for example, an FPC (Flexible Printed Circuit). ted circuit) can be used.

[0205] The anisotropic conductive connection layer 123 can be made of various anisotropic conductive films (ACFs). c Conductive Film) and Anisotropic Conductive Paste (ACP) It can be formed using a ropic conductive paste, etc.

[0206] The anisotropic conductive connection layer 123 is made of a thermosetting or thermosetting and photosetting resin with conductive particles. The mixed paste or sheet-like material is then hardened. The material 123 exhibits anisotropic conductivity when irradiated with light or subjected to thermocompression. The conductive particles used in 123 are, for example, spherical organic resin particles of Au, Ni, Co, etc. Particles coated with a thin film of metal can be used.

[0207] [Structures formed on the opposing element forming substrate] Next, regarding the structures such as the light-shielding layer 264 formed on the element formation substrate 141, reference is made to FIG. I will explain this in more detail.

[0208] First, an element formation substrate 141 is prepared. Next, a release layer 143 and an insulating layer 144 are formed on the element formation substrate 141. A peeling layer 143 is formed using the same material as the peeling layer 113 (see FIG. 15(A)). The insulating layer 145 can be formed using the same material and method as the insulating layer 205. The composition may be formed by the materials and methods.

[0209] Next, a light-shielding layer 264 is formed on the insulating layer 145 (see FIG. 15(B)). A layer 266 is formed (see FIG. 15(C)).

[0210] The light-shielding layer 264 and the colored layer 266 can be formed by using various materials using a printing method, an ink-jet method, or the like. They are formed at desired positions using photolithography.

[0211] Next, an overcoat layer 268 is formed on the light-shielding layer 264 and the colored layer 266 (FIG. 15 (See (D)).

[0212] The overcoat layer 268 may be made of, for example, acrylic resin, epoxy resin, or polyimide resin. By forming the overcoat layer 268, an organic insulating layer such as For example, it is possible to suppress the diffusion of impurities contained in the colored layer 266 to the light emitting element 125 side. However, the overcoat layer 268 does not necessarily have to be provided.

[0213] Alternatively, a light-transmitting conductive film may be formed as the overcoat layer 268. By providing a light-transmitting conductive film as the coating layer 268, the light emitted from the light-emitting element 125 can be The ionized light 235 can be transmitted through the filter 232 while preventing the transmission of ionized impurities.

[0214] The light-transmitting conductive film is, for example, made of indium oxide or indium tin oxide (ITO). Indium Tin Oxide, zinc oxide, gallium doped In addition to graphene, a light-transmitting material such as zinc oxide can be used. Alternatively, a metal film formed thin enough to be thin enough to be transparent may be used.

[0215] Through the above steps, structures such as the light blocking layer 264 can be formed on the element formation substrate 141.

[0216] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0217] (Embodiment 6) The configuration of the display device 100 having a top emission structure is modified to have a bottom emission structure. A display device 150 can be fabricated.

[0218] 16 shows an example of a cross-sectional configuration of a display device 150 having a bottom emission structure. 1A is a perspective view of the display device 100. In FIG. 1A, a dashed line indicates a region X1-X2. The display device 150 having the bottom emission structure includes a light-shielding layer 264. The positions of the color layer 266 and the overcoat layer 268 are different from those of the display device 100. Specifically, in the display device 150, a light-shielding layer 264, a colored layer 266, and an overcoat A conductive layer 268 is formed on the substrate 111 .

[0219] In the display device 150, the insulating layer 145 is formed directly on the substrate 121, and the adhesive layer 120 is That is, the insulating layer 145 can be bonded to the substrate 111 via the element forming substrate 1. Since there is no need to displace the element formation substrate 141, the peeling layer 143, and the adhesive layer 142, This can eliminate the need for a second electrode. This can improve the productivity and yield of the display device. The other components of the display device 150 can be formed in the same manner as the display device 100. do.

[0220] In addition, the display device 150 having the bottom emission structure has the electrode 115 made of a light-transmitting conductive material. The electrode 118 is formed of a conductive material that efficiently reflects the light emitted by the EL layer 117. It is formed using a conductive material.

[0221] In addition, the wiring 138 and the wiring 151 used in the display device 150 having a bottom emission structure (not shown in FIG. 16) is preferably made of a light-transmitting material.

[0222] The display device 150 transmits light 235 emitted from the EL layer 117 to the substrate 262 via the colored layer 266. It can be launched from the 111 side.

[0223] In the display device 150, the transistors constituting the driving circuit 133 are The transistor 272 is the same as the transistor 252. However, the electrode 263 can be formed in a region on the insulating layer 210 that overlaps with the semiconductor layer 208. The electrode 263 is formed by the same material and method as the gate electrode 206. It can be achieved.

[0224] The electrode 263 can function as a gate electrode. When either the electrode 261 or the electrode 262 is simply referred to as a "gate electrode," the other is referred to as a "back gate." In addition, either the gate electrode 206 or the electrode 226 may be referred to as One may be called the "first gate electrode" and the other may be called the "second gate electrode."

[0225] In general, the back gate electrode is made of a conductive film, and the gate electrode and the back gate electrode form a semiconductor. The back gate electrode is disposed so as to sandwich the channel forming region of the layer. The back gate electrode can function in the same manner as the gate electrode. The potential of the back gate electrode may be changed to the GND potential or any other potential. By changing the voltage, the threshold voltage of the transistor can be changed.

[0226] In addition, since the gate electrode and the back gate electrode are made of a conductive film, they can be easily The function of preventing the electric field generated from acting on the semiconductor layer in which the channel is formed (especially static electricity It also has electrostatic shielding function against

[0227] In addition, when light is incident from the back gate electrode side, the back gate electrode is made of a material having a light blocking property. By forming the semiconductor layer from a conductive film, light is prevented from entering the semiconductor layer from the back gate electrode side. This prevents the semiconductor layer from being photodegraded and the threshold voltage of the transistor is shifted. This can prevent deterioration of electrical characteristics such as the occurrence of

[0228] By providing the gate electrode 206 and the electrode 263 with the semiconductor layer 208 interposed therebetween, By setting the electrode 206 and the electrode 263 at the same potential, the carriers in the semiconductor layer 208 Since the area in which the carriers flow becomes larger in the film thickness direction, the amount of carrier movement increases. As a result, the on-state current of the transistor increases and the field effect mobility increases.

[0229] In addition, the gate electrode 206 and the electrode 263 each have a function of blocking an electric field from the outside. Therefore, the charge existing below the gate electrode 206 and above the electrode 263 is This does not affect the semiconductor layer 208. As a result, stress tests (e.g., applying a negative voltage to the gate) Gate Bias-Temperature (GBT) stress test and gate bias test The change in threshold voltage before and after the GBT stress test (applying a positive voltage to the In addition, it is necessary to suppress the fluctuation of the on-current rise voltage at different drain voltages. This can be done.

[0230] The BT stress test is a type of accelerated test that measures the transistor damage caused by long-term use. The change in the characteristics of the BT struts (i.e., aging) can be evaluated in a short time. The amount of change in the threshold voltage of a transistor before and after the load test is an important factor for investigating reliability. The smaller the change in threshold voltage before and after the BT stress test, the better the performance. It can be said that this is a highly reliable transistor.

[0231] Also, the gate electrode 206 and the electrode 263 are included, and the gate electrode 206 and the electrode 26 By making the potentials of the transistors 3 and 4 the same, the variation in the threshold voltage is reduced. At the same time, the variation in electrical characteristics of the transistors is reduced.

[0232] In addition, a back gate electrode is provided in the transistor 232 formed in the display region 131. Good too.

[0233] In addition, a touch sensor may be provided similarly to FIG. 21(A) and FIG. 21(B). An example of this case is shown in FIG. 22(A) and FIG. 22(B).

[0234] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0235] (Embodiment 7) In this embodiment, a configuration example of a light-emitting element that can be used as the light-emitting element 125 will be described. Note that the EL layer 320 in this embodiment is the same as the EL layer 117 in the other embodiments. is equivalent to.

[0236] <Configuration of light-emitting element> The light-emitting element 330 shown in FIG. 17A has an EL element between a pair of electrodes (electrode 318 and electrode 322). In the following description of the present embodiment, the layer 320 is taken as an example. Assume that electrode 318 is used as an anode and electrode 322 is used as a cathode.

[0237] The EL layer 320 may be formed to include at least a light-emitting layer. The functional layer other than the light-emitting layer may be a layered structure including a functional layer having a high hole injection property. materials with high hole transport properties, materials with high electron transport properties, materials with high electron injection properties, A layer containing a material having a high electron and hole transporting property can be used. In particular, functional layers such as a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer are appropriately combined. It can be used.

[0238] The light-emitting element 330 shown in FIG. 17A is irradiated with the potential difference generated between the electrode 318 and the electrode 322. This causes a current to flow, and holes and electrons recombine in the EL layer 320, emitting light. In other words, the EL layer 320 is configured to have a light-emitting region.

[0239] In one embodiment of the present invention, light emitted from the light emitting element 330 is incident on the electrode 318 or the electrode 322. Therefore, either the electrode 318 or the electrode 322 is transparent. It is made of a material that has optical properties.

[0240] The EL layer 320 is connected to the electrode 318 and the electrode 331 as in the light-emitting element 331 shown in FIG. 22 may be laminated in multiple layers. When this is the case, it is preferable to provide charge generation layers 320a between the m-th (where m is a natural number satisfying 1 ≦ m < n) EL layer 320 and the (m + 1) -th EL layer 320, respectively.

[0241] The charge generation layer 320a can be formed by appropriately combining a composite material of an organic compound and a metal oxide, a metal oxide, a composite material of an organic compound and an alkali metal, an alkaline earth metal, or a compound thereof, in addition to these. As the composite material of an organic compound and a metal oxide, for example it contains a metal oxide such as vanadium oxide, molybdenum oxide, or tungsten oxide and an organic compound. As the organic compound, an aromatic amine compound, a carbazole derivative, an aromatic hydrocarbon such as a low molecular weight compound such as an element, or an oligomer, dendrimer, polymer, etc. of these low molecular weight compounds can be used. Note that as the organic compound, a hole transporting organic compound with a hole mobility of 10 cm / Vs or more is preferably applied. However, as long as the substance has higher hole transportability than electrons, other substances can also be used . Note that these materials used for the charge generation layer 320a are excellent in carrier injection property and carrier transportability, so that low current driving and low voltage driving of the light emitting element 330 -6 cm 2 can be realized. However, as long as the substance has higher hole transportability than electrons, other substances can also be used. Note that these materials used for the charge generation layer 320a are excellent in carrier injection property and carrier transportability, so that low current driving and low voltage driving of the light emitting element 330 can be realized.

[0242] Note that the charge generation layer 320a may be formed by combining a composite material of an organic compound and a metal oxide with other materials. For example, a layer containing a composite material of an organic compound and a metal oxide and a layer containing a compound selected from electron donors and a compound with high electron transportability can be combined and formed. Further, a layer containing a composite material of an organic compound and a metal oxide and a transparent conductive film selected from among substances and a layer containing a compound with high electron transportability can be combined and formed. Further, a layer containing a composite material of an organic compound and a metal oxide and a transparent conductive film can be combined and formed. ​may be formed in combination with each other.

[0243] The light emitting device 331 having such a configuration may have problems such as energy transfer and quenching. It is difficult to achieve this, and the range of materials to choose from is expanding, making it possible to develop light-emitting devices that have both high luminous efficiency and a long life. It is also easy to obtain phosphorescence in one light-emitting layer and fluorescence in the other. It is.

[0244] The charge generating layer 320a is a layer that generates a charge when a voltage is applied between the electrodes 318 and 322. The electron injection layer 320 has a function of injecting electrons into one of the EL layers 320 formed in contact with the generating layer 320a. The other EL layer 320 has a function of injecting holes thereinto.

[0245] The light-emitting element 331 shown in FIG. 17B can be obtained by changing the type of light-emitting material used in the EL layer 320. By using multiple luminescent materials with different luminescent colors, various luminescent colors can be obtained. By using luminescent materials, it is possible to obtain broad spectrum emission or white light emission. do.

[0246] When white light is to be emitted using the light-emitting element 331 shown in FIG. 17(B), a combination of a plurality of EL layers is used. In combination, it is sufficient if the device emits white light containing red, blue, and green light. For example, The light-emitting layer contains a blue fluorescent material as a light-emitting material, and the light-emitting layer contains green and red phosphorescent materials as light-emitting materials. In addition, a light-emitting layer that emits red light and a light-emitting layer that emits green light may be used. Alternatively, the light-emitting layer may have a structure in which the light-emitting layer exhibits blue light emission is included. Even if the device has a light-emitting layer that emits light of complementary colors, white light can be obtained. In a stacked element in which two layers are stacked, the color of the light emitted from one light-emitting layer is different from that of the other. When the colors of the light emitted from each light-emitting layer are to be complementary, the complementary colors are blue and red. Examples include blue and yellow, or blue-green and red.

[0247] In the above-mentioned laminated element, a charge generating layer is disposed between the laminated light emitting layers. This makes it possible to realize a long-life element in the high-luminance region while keeping the current density low. In addition, the voltage drop due to the resistance of the electrode material can be reduced, allowing for uniform generation over a large area. Light becomes possible.

[0248] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0249] (Embodiment 8) In this embodiment, a pixel that can be applied to the pixel 130 of the display device 100 will be described with reference to FIG. An example of the planar shape and arrangement of the element will be described.

[0250] FIG. 18A shows a pixel 130 with sub-pixels in an H arrangement and a pixel 130 with sub-pixels in a V arrangement in the horizontal direction. The pixels 130 are arranged alternately, and the sub-pixels in the vertical direction are arranged in an H-arrangement. In this example, the pixel 30 and the pixel 130 whose subpixels are arranged in a V arrangement are arranged alternately. By alternately arranging the pixels 130 in a V-arrangement, the display quality of the display device 100 can be improved. This can reduce the glare.

[0251] FIG. 18B shows an example in which the planar shape of the sub-pixel of the pixel 130 is curved. By making the sub-pixels bent, it is possible to obtain the same effect as the arrangement shown in FIG. This can provide a positive effect, thereby reducing variations in the display quality of the display device 100. The bending angle θ shown in FIG. 18(B) is preferably 80° or more and 100° or less, and more preferably 85° or more. A value of 95° or less is more preferable.

[0252] The planar shape and arrangement of the pixels shown in FIG. 18(A) and FIG. 18(B) are This is particularly effective when the entire display area 131 or most of the display area 131 is curved.

[0253] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0254] (Embodiment 9) In this embodiment, examples of electronic devices to which the display device of one embodiment of the present invention is applied will be described with reference to FIG. The description will be given with reference to the surface.

[0255] As an example of an electronic device to which a display device having a flexible shape is applied, a television Equipment (also called television or television receiver), monitors for computers, digital Cameras such as digital cameras and digital video cameras, digital photo frames, and mobile phones (also called mobile phones or mobile phone devices), portable game machines, portable information terminals, audio playback devices, Examples include large gaming machines such as pachinko machines.

[0256] FIG. 23A shows an example of a wristband-type display device. The device includes a housing 7101, a curved display unit 7102, an operation button 7103, and a transmission / reception device 71. Equipped with 04.

[0257] The portable display device 7100 can receive a video signal by a transmitting / receiving device 7104. Video can be displayed on the display unit 7102. Audio signals can also be sent to other receiving devices. It is also possible.

[0258] In addition, the operation button 7103 can be used to turn the power on and off and to switch the image to be displayed. , or adjust the volume of the audio.

[0259] Here, the display device of one embodiment of the present invention is incorporated in the display portion 7102. As a result, a portable display device having good display quality and high reliability can be obtained.

[0260] FIG. 23B shows an example of a mobile phone. A mobile phone 7400 includes a housing 7401. In addition to the display unit 7402 having a curved region incorporated in the The device is equipped with a connection port 7404, a speaker 7405, a microphone 7406, etc. The phone 7400 is manufactured using a display device for the display portion 7402 .

[0261] In a mobile phone 7400 shown in FIG. 23B, information is displayed by touching a display portion 7402 with a finger or the like. You can also make calls, enter text, or do any other kind of An operation can be performed by touching the display portion 7402 with a finger or the like.

[0262] In addition, by operating the operation button 7403, the power can be turned on and off, and the display unit 7402 can be displayed. For example, you can change the type of image displayed from the main menu to the email composition screen. You can switch to the screen.

[0263] Here, the display device of one embodiment of the present invention is incorporated in the display portion 7402. As a result, a mobile phone with good display quality and high reliability can be obtained.

[0264] FIG. 23C shows an example of a television device. The television device 9600 includes: A display portion 9602 is incorporated in a housing 9601. 2, it is possible to display images. Also, a speaker 96 is provided on the side of the housing 9601. 9603. In this embodiment, the housing 9601 is supported by a stand 9604. By using the display device shown in the above embodiment, a highly reliable It may be a television device.

[0265] Here, the display device of one embodiment of the present invention is incorporated in the display portion 9602. As a result, a television device with good display quality and high reliability can be obtained.

[0266] The television device can be operated using an operation switch on the housing 9601 or a separate remote control. In addition, the remote control device can be operated by transmitting the information output from the remote control device. A display unit for displaying information may be provided.

[0267] The television set is assumed to be equipped with a receiver and a modem. It can receive television broadcasts and can also communicate by wire or wirelessly via a modem. By connecting to a network, communication can be one-way (sender to receiver) or two-way (sender to It is also possible to communicate information between the sender and the recipient, or between the recipients themselves.

[0268] The structures and methods described in this embodiment may be appropriately combined with the structures and methods described in other embodiments. They can be used in combination. [Explanation of symbols]

[0269] 100 display device 101 Element formation substrate 111 Substrate 112 Adhesive layer 113 Peeling layer 114 Bulkhead 115 Electrode 117 EL layer 118 Electrode 120 Adhesive layer 121 Substrate 122 Aperture 123 Anisotropic conductive connection layer 124 External electrode 125 Light emitting element 128 Aperture 129 Aperture 131 Display area 133 Drive circuit 134 Pixel circuit 135 Wiring 136 Wiring 137 Wiring 138 Wiring 139 Wiring 141 Element formation substrate 142 Adhesive layer 143 Peeling layer 145 Insulating Layer 150 Display device 151 Wiring 152 Wiring 153 Aperture 154 Aperture 155 Aperture 156 Wiring 160 areas 161 parts 165 pixels 166 Array Direction 168 Normal 170 areas 171 parts 175 pixels 176 Array Direction 178 Normal 181 parts 205 Insulating layer 206 Gate electrode 207 Gate Insulation Layer 208 Semiconductor layer 210 Insulating layer 211 Insulating layer 216 Terminal electrode 219 Wiring 226 Electrode 232 Transistor 233 Capacitive element 235 light 252 Transistor 263 Electrode 264 Light blocking layer 266 Colored layer 268 Overcoat Layer 272 Transistor 318 Electrode 320 EL layer 322 Electrode 330 Light emitting element 331 Light-emitting element 431 Transistor 432 Liquid crystal element 434 Transistor 435 nodes 436 nodes 437 nodes 900 Display device 910 Observer 991 Conductive layer 992 Insulation layer 993 Conductive layer 994 Board 7100 Portable display devices 7101 Case 7102 Display section 7103 Operation button 7104 Transmitting and receiving equipment 7400 Mobile Phone 7401 Case 7402 Display section 7403 Operation button 7404 External connection port 7405 Speaker 7406 Mike 9600 Television Equipment 9601 Case 9602 Display section 9603 Speaker 9604 Stand 117B EL layer 117G EL layer 117R EL layer 125B Light emitting element 125G light emitting element 125R Light emitting element 132a Drive circuit 132b Drive circuit 134B Pixel circuit 134G pixel circuit 134R Pixel circuit 165B subpixel 165G subpixel 165R subpixel 165W subpixel 175B subpixel 175G subpixel 175R subpixel 209a Source electrode 209b Drain electrode 235B light 235G light 235R light 266B Colored layer 266G colored layer 266R colored layer 320a Charge generating layer

Claims

1. A light-emitting device including a pixel having first to third subpixels, first to third signal lines, a scanning line, and a potential supply line, the first subpixel includes first to third transistors, a first light-emitting element, and a first capacitor element; one of a source and a drain of the first transistor is electrically connected to the first signal line; the other of the source and the drain of the first transistor is electrically connected to the gate of the second transistor; a gate of the first transistor electrically connected to the scan line; one of a source and a drain of the second transistor is electrically connected to the potential supply line; the other of the source and the drain of the second transistor is electrically connected to a first pixel electrode of the first light-emitting element; one of a source and a drain of the third transistor is electrically connected to the first pixel electrode; the second subpixel includes fourth to sixth transistors, a second light emitting element, and a second capacitor element; one of a source and a drain of the fourth transistor is electrically connected to the second signal line; the other of the source and the drain of the fourth transistor is electrically connected to the gate of the fifth transistor; a gate of the fourth transistor electrically connected to the scanning line; one of a source and a drain of the fifth transistor is electrically connected to the potential supply line; the other of the source and the drain of the fifth transistor is electrically connected to a second pixel electrode of the second light-emitting element; one of a source and a drain of the sixth transistor is electrically connected to the second pixel electrode; the third subpixel includes seventh to ninth transistors, a third light emitting element, and a third capacitive element; one of a source and a drain of the seventh transistor is electrically connected to the third signal line; the other of the source and the drain of the seventh transistor is electrically connected to the gate of the eighth transistor; a gate of the seventh transistor electrically connected to the scanning line; one of a source and a drain of the eighth transistor is electrically connected to the potential supply line; the other of the source and the drain of the eighth transistor is electrically connected to a third pixel electrode of the third light-emitting element; one of a source and a drain of the ninth transistor is electrically connected to the third pixel electrode; a first conductive film having a function as the scanning line, a function as a gate of the first transistor, a function as a gate of the fourth transistor, and a function as a gate of the seventh transistor, the first conductive film having a region extending along a first direction, the second conductive film having a function as the potential supply line has a region extending along the first direction, a third conductive film having a function as a gate of the second transistor and having a function as one electrode of the first capacitor; a fourth conductive film having a function as one of a source and a drain of the second transistor has a region in contact with the second conductive film, a fifth conductive film having a function as the other of the source and drain of the second transistor has a function as the other electrode of the first capacitor; a sixth conductive film having a function as a gate of the fifth transistor and having a function as one electrode of the second capacitor; a seventh conductive film having a function as one of a source and a drain of the fifth transistor has a region in contact with the second conductive film, an eighth conductive film having a function as the other of the source and drain of the fifth transistor has a function as the other electrode of the second capacitor; a ninth conductive film having a function as a gate of the eighth transistor has a function as one electrode of the third capacitor; a tenth conductive film having a function as one of a source and a drain of the eighth transistor has a region in contact with the second conductive film, an eleventh conductive film having a function as the other of the source and drain of the eighth transistor has a function as the other electrode of the third capacitor; an upper surface of the fifth conductive film has a first region in contact with the first pixel electrode in a region overlapping with the third conductive film; an upper surface of the eighth conductive film has a second region in contact with the second pixel electrode in a region overlapping with the sixth conductive film; an upper surface of the eleventh conductive film has a third region in contact with the third pixel electrode in a region overlapping with the ninth conductive film; the fifth conductive film, the eighth conductive film, and the eleventh conductive film are arranged side by side along the first direction, the first region, the second region, and the third region have mutually different intervals from the second conductive film in a second direction intersecting the first direction; Light emitting device.

2. A light-emitting device including a pixel having first to third subpixels, first to third signal lines, a scanning line, and a potential supply line, the first subpixel includes first to third transistors, a first light-emitting element, and a first capacitor element; one of a source and a drain of the first transistor is electrically connected to the first signal line; the other of the source and the drain of the first transistor is electrically connected to the gate of the second transistor; a gate of the first transistor electrically connected to the scan line; one of a source and a drain of the second transistor is electrically connected to the potential supply line; the other of the source and the drain of the second transistor is electrically connected to a first pixel electrode of the first light-emitting element; one of a source and a drain of the third transistor is electrically connected to the first pixel electrode; the second subpixel includes fourth to sixth transistors, a second light emitting element, and a second capacitor element; one of a source and a drain of the fourth transistor is electrically connected to the second signal line; the other of the source and the drain of the fourth transistor is electrically connected to the gate of the fifth transistor; a gate of the fourth transistor electrically connected to the scanning line; one of a source and a drain of the fifth transistor is electrically connected to the potential supply line; the other of the source and the drain of the fifth transistor is electrically connected to a second pixel electrode of the second light-emitting element; one of a source and a drain of the sixth transistor is electrically connected to the second pixel electrode; the third subpixel includes seventh to ninth transistors, a third light emitting element, and a third capacitive element; one of a source and a drain of the seventh transistor is electrically connected to the third signal line; the other of the source and the drain of the seventh transistor is electrically connected to the gate of the eighth transistor; a gate of the seventh transistor electrically connected to the scanning line; one of a source and a drain of the eighth transistor is electrically connected to the potential supply line; the other of the source and the drain of the eighth transistor is electrically connected to a third pixel electrode of the third light-emitting element; one of a source and a drain of the ninth transistor is electrically connected to the third pixel electrode; a first conductive film having a function as the scanning line, a function as a gate of the first transistor, a function as a gate of the fourth transistor, and a function as a gate of the seventh transistor, the first conductive film having a region extending along a first direction, the second conductive film having a function as the potential supply line has a region extending along the first direction, a third conductive film having a function as a gate of the second transistor and having a function as one electrode of the first capacitor; a fourth conductive film having a function as one of a source and a drain of the second transistor has a region in contact with the second conductive film, a fifth conductive film having a function as the other of the source and the drain of the second transistor has a function as the other electrode of the first capacitor and has a function as one of the source and the drain of the third transistor; a sixth conductive film having a function as a gate of the fifth transistor and having a function as one electrode of the second capacitor; a seventh conductive film having a function as one of a source and a drain of the fifth transistor has a region in contact with the second conductive film, an eighth conductive film having a function as the other of the source and the drain of the fifth transistor has a function as the other electrode of the second capacitor element and has a function as one of the source and the drain of the sixth transistor; a ninth conductive film having a function as a gate of the eighth transistor has a function as one electrode of the third capacitor; a tenth conductive film having a function as one of a source and a drain of the eighth transistor has a region in contact with the second conductive film, an eleventh conductive film having a function as the other of the source and the drain of the eighth transistor has a function as the other electrode of the third capacitor element and has a function as one of the source and the drain of the ninth transistor; an upper surface of the fifth conductive film has a first region in contact with the first pixel electrode in a region overlapping with the third conductive film; an upper surface of the eighth conductive film has a second region in contact with the second pixel electrode in a region overlapping with the sixth conductive film; an upper surface of the eleventh conductive film has a third region in contact with the third pixel electrode in a region overlapping with the ninth conductive film; the fifth conductive film, the eighth conductive film, and the eleventh conductive film are arranged side by side along the first direction, the first region, the second region, and the third region have mutually different intervals from the second conductive film in a second direction intersecting the first direction; Light emitting device.

3. A light-emitting device including a pixel having first to third subpixels, first to third signal lines, a scanning line, and a potential supply line, the first subpixel includes first to third transistors, a first light-emitting element, and a first capacitor element; one of a source and a drain of the first transistor is electrically connected to the first signal line; the other of the source and the drain of the first transistor is electrically connected to the gate of the second transistor; a gate of the first transistor electrically connected to the scan line; one of a source and a drain of the second transistor is electrically connected to the potential supply line; the other of the source and the drain of the second transistor is electrically connected to a first pixel electrode of the first light-emitting element; one of a source and a drain of the third transistor is electrically connected to the first pixel electrode; the second subpixel includes fourth to sixth transistors, a second light emitting element, and a second capacitor element; one of a source and a drain of the fourth transistor is electrically connected to the second signal line; the other of the source and the drain of the fourth transistor is electrically connected to the gate of the fifth transistor; a gate of the fourth transistor electrically connected to the scanning line; one of a source and a drain of the fifth transistor is electrically connected to the potential supply line; the other of the source and the drain of the fifth transistor is electrically connected to a second pixel electrode of the second light-emitting element; one of a source and a drain of the sixth transistor is electrically connected to the second pixel electrode; the third subpixel includes seventh to ninth transistors, a third light emitting element, and a third capacitive element; one of a source and a drain of the seventh transistor is electrically connected to the third signal line; the other of the source and the drain of the seventh transistor is electrically connected to the gate of the eighth transistor; a gate of the seventh transistor electrically connected to the scanning line; one of a source and a drain of the eighth transistor is electrically connected to the potential supply line; the other of the source and the drain of the eighth transistor is electrically connected to a third pixel electrode of the third light-emitting element; one of a source and a drain of the ninth transistor is electrically connected to the third pixel electrode; a gate of the third transistor, a gate of the sixth transistor, and a gate of the ninth transistor are electrically connected to each other; a first conductive film having a function as the scanning line, a function as a gate of the first transistor, a function as a gate of the fourth transistor, and a function as a gate of the seventh transistor, the first conductive film having a region extending along a first direction, the second conductive film having a function as the potential supply line has a region extending along the first direction, a third conductive film having a function as a gate of the second transistor and having a function as one electrode of the first capacitor; a fourth conductive film having a function as one of a source and a drain of the second transistor has a region in contact with the second conductive film, a fifth conductive film having a function as the other of the source and drain of the second transistor has a function as the other electrode of the first capacitor; a sixth conductive film having a function as a gate of the fifth transistor and having a function as one electrode of the second capacitor; a seventh conductive film having a function as one of a source and a drain of the fifth transistor has a region in contact with the second conductive film, an eighth conductive film having a function as the other of the source and drain of the fifth transistor has a function as the other electrode of the second capacitor; a ninth conductive film having a function as a gate of the eighth transistor has a function as one electrode of the third capacitor; a tenth conductive film having a function as one of a source and a drain of the eighth transistor has a region in contact with the second conductive film, an eleventh conductive film having a function as the other of the source and drain of the eighth transistor has a function as the other electrode of the third capacitor; an upper surface of the fifth conductive film has a first region in contact with the first pixel electrode in a region overlapping with the third conductive film; an upper surface of the eighth conductive film has a second region in contact with the second pixel electrode in a region overlapping with the sixth conductive film; an upper surface of the eleventh conductive film has a third region in contact with the third pixel electrode in a region overlapping with the ninth conductive film; the fifth conductive film, the eighth conductive film, and the eleventh conductive film are arranged side by side along the first direction, the first region, the second region, and the third region have mutually different intervals from the second conductive film in a second direction intersecting the first direction; Light emitting device.

4. A light-emitting device including a pixel having first to third subpixels, first to third signal lines, a scanning line, and a potential supply line, the first subpixel includes first to third transistors, a first light-emitting element, and a first capacitor element; one of a source and a drain of the first transistor is electrically connected to the first signal line; the other of the source and the drain of the first transistor is electrically connected to the gate of the second transistor; a gate of the first transistor electrically connected to the scan line; one of a source and a drain of the second transistor is electrically connected to the potential supply line; the other of the source and the drain of the second transistor is electrically connected to a first pixel electrode of the first light-emitting element; one of a source and a drain of the third transistor is electrically connected to the first pixel electrode; the second subpixel includes fourth to sixth transistors, a second light emitting element, and a second capacitor element; one of a source and a drain of the fourth transistor is electrically connected to the second signal line; the other of the source and the drain of the fourth transistor is electrically connected to the gate of the fifth transistor; a gate of the fourth transistor electrically connected to the scanning line; one of a source and a drain of the fifth transistor is electrically connected to the potential supply line; the other of the source and the drain of the fifth transistor is electrically connected to a second pixel electrode of the second light-emitting element; one of a source and a drain of the sixth transistor is electrically connected to the second pixel electrode; the third subpixel includes seventh to ninth transistors, a third light emitting element, and a third capacitive element; one of a source and a drain of the seventh transistor is electrically connected to the third signal line; the other of the source and the drain of the seventh transistor is electrically connected to the gate of the eighth transistor; a gate of the seventh transistor electrically connected to the scanning line; one of a source and a drain of the eighth transistor is electrically connected to the potential supply line; the other of the source and the drain of the eighth transistor is electrically connected to a third pixel electrode of the third light-emitting element; one of a source and a drain of the ninth transistor is electrically connected to the third pixel electrode; a gate of the third transistor, a gate of the sixth transistor, and a gate of the ninth transistor are electrically connected to each other; a first conductive film having a function as the scanning line, a function as a gate of the first transistor, a function as a gate of the fourth transistor, and a function as a gate of the seventh transistor, the first conductive film having a region extending along a first direction, the second conductive film having a function as the potential supply line has a region extending along the first direction, a third conductive film having a function as a gate of the second transistor and having a function as one electrode of the first capacitor; a fourth conductive film having a function as one of a source and a drain of the second transistor has a region in contact with the second conductive film, a fifth conductive film having a function as the other of the source and the drain of the second transistor has a function as the other electrode of the first capacitor and has a function as one of the source and the drain of the third transistor; a sixth conductive film having a function as a gate of the fifth transistor and having a function as one electrode of the second capacitor; a seventh conductive film having a function as one of a source and a drain of the fifth transistor has a region in contact with the second conductive film, an eighth conductive film having a function as the other of the source and the drain of the fifth transistor has a function as the other electrode of the second capacitor element and has a function as one of the source and the drain of the sixth transistor; a ninth conductive film having a function as a gate of the eighth transistor has a function as one electrode of the third capacitor; a tenth conductive film having a function as one of a source and a drain of the eighth transistor has a region in contact with the second conductive film, an eleventh conductive film having a function as the other of the source and the drain of the eighth transistor has a function as the other electrode of the third capacitor element and has a function as one of the source and the drain of the ninth transistor; an upper surface of the fifth conductive film has a first region in contact with the first pixel electrode in a region overlapping with the third conductive film; an upper surface of the eighth conductive film has a second region in contact with the second pixel electrode in a region overlapping with the sixth conductive film; an upper surface of the eleventh conductive film has a third region in contact with the third pixel electrode in a region overlapping with the ninth conductive film; the fifth conductive film, the eighth conductive film, and the eleventh conductive film are arranged side by side along the first direction, the first region, the second region, and the third region have mutually different intervals from the second conductive film in a second direction intersecting the first direction; Light emitting device.

5. In any one of claims 1 to 4, the first pixel electrode overlaps with the second conductive film and does not overlap with the first conductive film; the third pixel electrode overlaps with the first conductive film and does not overlap with the second conductive film; Light emitting device.

Images